TWI738634B - 正型感光性樹脂組成物、硬化膜及顯示元件 - Google Patents
正型感光性樹脂組成物、硬化膜及顯示元件 Download PDFInfo
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- TWI738634B TWI738634B TW104140780A TW104140780A TWI738634B TW I738634 B TWI738634 B TW I738634B TW 104140780 A TW104140780 A TW 104140780A TW 104140780 A TW104140780 A TW 104140780A TW I738634 B TWI738634 B TW I738634B
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- component
- photosensitive resin
- resin composition
- positive photosensitive
- mass
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- 239000011342 resin composition Substances 0.000 title claims abstract description 57
- -1 N-substituted maleimide compounds Chemical class 0.000 claims abstract description 44
- 239000002904 solvent Substances 0.000 claims abstract description 43
- 239000000178 monomer Substances 0.000 claims abstract description 35
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 13
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 11
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 10
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
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- AQOSPGCCTHGZFL-UHFFFAOYSA-N 1-(3a-hydroxy-7-methoxy-1,2,4,8b-tetrahydropyrrolo[2,3-b]indol-3-yl)ethanone Chemical compound COC1=CC=C2NC3(O)N(C(C)=O)CCC3C2=C1 AQOSPGCCTHGZFL-UHFFFAOYSA-N 0.000 description 4
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- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 3
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- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 3
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- GGAUUQHSCNMCAU-ZXZARUISSA-N (2s,3r)-butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C[C@H](C(O)=O)[C@H](C(O)=O)CC(O)=O GGAUUQHSCNMCAU-ZXZARUISSA-N 0.000 description 1
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- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- VKNRMUNOBKFFMA-UHFFFAOYSA-N triethoxy(3-piperidin-1-ylpropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN1CCCCC1 VKNRMUNOBKFFMA-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical class O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Liquid Crystal (AREA)
- Optics & Photonics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2014245972 | 2014-12-04 | ||
JP2014-245972 | 2014-12-04 |
Publications (2)
Publication Number | Publication Date |
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TW201635033A TW201635033A (zh) | 2016-10-01 |
TWI738634B true TWI738634B (zh) | 2021-09-11 |
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TW104140780A TWI738634B (zh) | 2014-12-04 | 2015-12-04 | 正型感光性樹脂組成物、硬化膜及顯示元件 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6744577B2 (fr) |
KR (1) | KR102622165B1 (fr) |
CN (1) | CN107003607B (fr) |
TW (1) | TWI738634B (fr) |
WO (1) | WO2016088757A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI773645B (zh) * | 2015-07-30 | 2022-08-11 | 日商東京應化工業股份有限公司 | 感光性組成物、圖型形成方法、永久膜及cmos影像感測器用濾色片 |
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KR102040224B1 (ko) * | 2016-08-09 | 2019-11-06 | 주식회사 엘지화학 | 절연층 제조방법 및 다층인쇄회로기판 제조방법 |
KR101947150B1 (ko) * | 2016-08-09 | 2019-02-12 | 주식회사 엘지화학 | 절연층 제조방법 및 다층인쇄회로기판 제조방법 |
KR102040225B1 (ko) * | 2016-11-11 | 2019-11-06 | 주식회사 엘지화학 | 절연층 제조방법 및 다층인쇄회로기판 제조방법 |
WO2018088754A1 (fr) * | 2016-11-11 | 2018-05-17 | 주식회사 엘지화학 | Procédé de fabrication de couche isolante et procédé de fabrication de carte de circuit imprimé multicouche |
KR102080079B1 (ko) | 2018-10-30 | 2020-02-21 | 인하대학교 산학협력단 | 고불소계 용제에 용해성을 가지는 고불소화 단분자 포토레지스트 및 이를 이용한 패턴 형성 방법 |
TW202422226A (zh) * | 2022-07-29 | 2024-06-01 | 日商日產化學股份有限公司 | 正型感光性樹脂組成物 |
CN115160495B (zh) * | 2022-08-15 | 2024-05-14 | 四川华造宏材科技有限公司 | 含马来酰亚胺结构的光刻胶成膜树脂及其制备方法 |
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JP3241399B2 (ja) | 1991-05-30 | 2001-12-25 | ジェイエスアール株式会社 | マイクロレンズ用感放射線性樹脂組成物 |
JP3959732B2 (ja) | 1998-09-29 | 2007-08-15 | Jsr株式会社 | 熱硬化性樹脂組成物 |
JP4584487B2 (ja) * | 2001-05-08 | 2010-11-24 | コダック株式会社 | ポジ型画像形成材及びそれを用いたポジ画像形成方法 |
EP1577330B1 (fr) * | 2003-08-22 | 2012-02-15 | Okamoto Chemical Industry Co., Ltd | Copolymère, composition pour la formation d'images et plaque pour l'impression lithographique |
JP2005097546A (ja) * | 2003-08-22 | 2005-04-14 | Okamoto Kagaku Kogyo Kk | 平版印刷版用原版 |
TWI424270B (zh) * | 2004-05-26 | 2014-01-21 | Nissan Chemical Ind Ltd | 正型感光性樹脂組成物及所得層間絕緣膜以及微透鏡 |
US8828651B2 (en) * | 2005-07-25 | 2014-09-09 | Nissan Chemical Industries, Ltd. | Positive-type photosensitive resin composition and cured film manufactured therefrom |
KR101280478B1 (ko) * | 2005-10-26 | 2013-07-15 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 |
WO2007086249A1 (fr) * | 2006-01-25 | 2007-08-02 | Nissan Chemical Industries, Ltd. | Composition de resine photosensible positive et film durci obtenu a partir de cette composition |
TW200813635A (en) * | 2006-05-16 | 2008-03-16 | Nissan Chemical Ind Ltd | Positive type photosensitive resin composition and porous film obtained therefrom |
CN101349865B (zh) * | 2007-07-17 | 2012-10-03 | 富士胶片株式会社 | 感光性组合物、可固化组合物、滤色器和制备滤色器的方法 |
JP5496482B2 (ja) * | 2007-08-27 | 2014-05-21 | 富士フイルム株式会社 | 新規化合物、光重合性組成物、カラーフィルタ用光重合性組成物、カラーフィルタ、及びその製造方法、固体撮像素子、並びに、平版印刷版原版 |
TWI505034B (zh) * | 2010-02-02 | 2015-10-21 | Nissan Chemical Ind Ltd | 正型感光性樹脂組成物及撥液性被膜 |
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JP6070203B2 (ja) * | 2013-01-16 | 2017-02-01 | Jsr株式会社 | 半導体素子及び表示素子 |
JP6157193B2 (ja) * | 2013-04-22 | 2017-07-05 | 昭和電工株式会社 | (メタ)アクリレート系ポリマー、該ポリマーを含む組成物及びその用途 |
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- 2015-12-01 WO PCT/JP2015/083771 patent/WO2016088757A1/fr active Application Filing
- 2015-12-01 JP JP2016562636A patent/JP6744577B2/ja active Active
- 2015-12-01 KR KR1020177013575A patent/KR102622165B1/ko active IP Right Grant
- 2015-12-01 CN CN201580065289.8A patent/CN107003607B/zh active Active
- 2015-12-04 TW TW104140780A patent/TWI738634B/zh active
Patent Citations (1)
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TW201433883A (zh) * | 2013-01-16 | 2014-09-01 | Jsr Corp | 硬化膜形成用熱硬化性樹脂組成物、負型感放射線性樹脂組成物、正型感放射線性樹脂組成物、硬化膜、其形成方法、半導體元件及顯示元件 |
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TWI773645B (zh) * | 2015-07-30 | 2022-08-11 | 日商東京應化工業股份有限公司 | 感光性組成物、圖型形成方法、永久膜及cmos影像感測器用濾色片 |
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Publication number | Publication date |
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WO2016088757A1 (fr) | 2016-06-09 |
KR102622165B1 (ko) | 2024-01-08 |
CN107003607A (zh) | 2017-08-01 |
JP6744577B2 (ja) | 2020-08-19 |
CN107003607B (zh) | 2021-05-28 |
TW201635033A (zh) | 2016-10-01 |
JPWO2016088757A1 (ja) | 2017-09-21 |
KR20170092542A (ko) | 2017-08-11 |
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