TWI737686B - 包含具有高純度sp3 鍵之化學氣相沉積鑽石塗層的電漿處理系統用之邊緣環等元件 - Google Patents

包含具有高純度sp3 鍵之化學氣相沉積鑽石塗層的電漿處理系統用之邊緣環等元件 Download PDF

Info

Publication number
TWI737686B
TWI737686B TW106106790A TW106106790A TWI737686B TW I737686 B TWI737686 B TW I737686B TW 106106790 A TW106106790 A TW 106106790A TW 106106790 A TW106106790 A TW 106106790A TW I737686 B TWI737686 B TW I737686B
Authority
TW
Taiwan
Prior art keywords
plasma
diamond coating
processing system
edge ring
processing chamber
Prior art date
Application number
TW106106790A
Other languages
English (en)
Chinese (zh)
Other versions
TW201800596A (zh
Inventor
賈斯汀 查爾斯 卡尼夫
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201800596A publication Critical patent/TW201800596A/zh
Application granted granted Critical
Publication of TWI737686B publication Critical patent/TWI737686B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW106106790A 2016-03-03 2017-03-02 包含具有高純度sp3 鍵之化學氣相沉積鑽石塗層的電漿處理系統用之邊緣環等元件 TWI737686B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201662303091P 2016-03-03 2016-03-03
US62/303,091 2016-03-03
US201662310993P 2016-03-21 2016-03-21
US62/310,993 2016-03-21
US15/428,744 US11008655B2 (en) 2016-03-03 2017-02-09 Components such as edge rings including chemical vapor deposition (CVD) diamond coating with high purity SP3 bonds for plasma processing systems
US15/428,744 2017-02-09

Publications (2)

Publication Number Publication Date
TW201800596A TW201800596A (zh) 2018-01-01
TWI737686B true TWI737686B (zh) 2021-09-01

Family

ID=59724242

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106106790A TWI737686B (zh) 2016-03-03 2017-03-02 包含具有高純度sp3 鍵之化學氣相沉積鑽石塗層的電漿處理系統用之邊緣環等元件
TW110128839A TWI793701B (zh) 2016-03-03 2017-03-02 包含具有高純度sp3鍵之化學氣相沉積鑽石塗層的電漿處理系統用之邊緣環等元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW110128839A TWI793701B (zh) 2016-03-03 2017-03-02 包含具有高純度sp3鍵之化學氣相沉積鑽石塗層的電漿處理系統用之邊緣環等元件

Country Status (6)

Country Link
US (1) US11008655B2 (enExample)
JP (1) JP2017166065A (enExample)
KR (2) KR20170103689A (enExample)
CN (2) CN113506719B (enExample)
SG (2) SG10201701713TA (enExample)
TW (2) TWI737686B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10784091B2 (en) * 2017-09-29 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Process and related device for removing by-product on semiconductor processing chamber sidewalls
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
CN109994351B (zh) * 2018-01-02 2021-07-13 台湾积体电路制造股份有限公司 离子布植机及离子布植机腔室的制造方法
CN111819679A (zh) 2018-03-13 2020-10-23 应用材料公司 具有等离子体喷涂涂层的支撑环
US11515128B2 (en) * 2018-08-28 2022-11-29 Lam Research Corporation Confinement ring with extended life
KR102305539B1 (ko) * 2019-04-16 2021-09-27 주식회사 티씨케이 SiC 엣지 링
JP7412923B2 (ja) * 2019-08-23 2024-01-15 東京エレクトロン株式会社 エッジリング、プラズマ処理装置及びエッジリングの製造方法
CN112899662A (zh) * 2019-12-04 2021-06-04 江苏菲沃泰纳米科技股份有限公司 Dlc制备装置和制备方法
CN112853482B (zh) * 2020-12-31 2022-09-27 武汉大学深圳研究院 一种微波等离子体-磁控溅射复合气相沉积原位制备100面金刚石的方法及设备
CN114318287B (zh) * 2021-12-23 2023-11-03 深圳技术大学 金刚石自支撑膜的制备方法和金刚石自支撑膜
US12354842B2 (en) 2023-01-19 2025-07-08 Tokyo Electron Limited In-situ focus ring coating

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI267563B (en) * 2000-12-29 2006-12-01 Lam Res Corp Diamond coatings on reactor wall and method of manufacturing thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5190823A (en) * 1989-07-31 1993-03-02 General Electric Company Method for improving adhesion of synthetic diamond coatings to substrates
US5167714A (en) * 1989-09-29 1992-12-01 Nordson Corporation Powder coating system with configurable controller and dew point detection
US5952060A (en) * 1996-06-14 1999-09-14 Applied Materials, Inc. Use of carbon-based films in extending the lifetime of substrate processing system components
US6508911B1 (en) * 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
US6605352B1 (en) * 2000-01-06 2003-08-12 Saint-Gobain Ceramics & Plastics, Inc. Corrosion and erosion resistant thin film diamond coating and applications therefor
JP4028274B2 (ja) * 2002-03-26 2007-12-26 住友大阪セメント株式会社 耐食性材料
US7247348B2 (en) * 2004-02-25 2007-07-24 Honeywell International, Inc. Method for manufacturing a erosion preventative diamond-like coating for a turbine engine compressor blade
EP1719801A4 (en) * 2004-02-26 2008-09-24 Daikin Ind Ltd ELASTOMERIC FLUORINE COMPOSITION
US7658802B2 (en) * 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
GB2449388B (en) * 2006-03-06 2011-08-17 Diamond Innovations Inc Prosthesis for joint replacement
US20090029067A1 (en) * 2007-06-28 2009-01-29 Sciamanna Steven F Method for producing amorphous carbon coatings on external surfaces using diamondoid precursors
US7629031B2 (en) * 2007-07-13 2009-12-08 Sub-One Technology, Inc. Plasma enhanced bonding for improving adhesion and corrosion resistance of deposited films
JP2009123795A (ja) * 2007-11-13 2009-06-04 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
DE102010054875B4 (de) * 2010-12-17 2012-10-31 Eagleburgmann Germany Gmbh & Co. Kg Reibungsarmer Gleitring mit kostengünstiger Diamantbeschichtung
US9059678B2 (en) 2011-04-28 2015-06-16 Lam Research Corporation TCCT match circuit for plasma etch chambers
US10242848B2 (en) * 2014-12-12 2019-03-26 Lam Research Corporation Carrier ring structure and chamber systems including the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI267563B (en) * 2000-12-29 2006-12-01 Lam Res Corp Diamond coatings on reactor wall and method of manufacturing thereof

Also Published As

Publication number Publication date
CN113506719A (zh) 2021-10-15
CN113506719B (zh) 2024-06-04
TW202217038A (zh) 2022-05-01
KR102556603B1 (ko) 2023-07-17
KR20220036924A (ko) 2022-03-23
TW201800596A (zh) 2018-01-01
JP2017166065A (ja) 2017-09-21
CN107393797B (zh) 2021-06-08
US20170253974A1 (en) 2017-09-07
US11008655B2 (en) 2021-05-18
TWI793701B (zh) 2023-02-21
CN107393797A (zh) 2017-11-24
SG10201701713TA (en) 2017-10-30
KR20170103689A (ko) 2017-09-13
SG10202008553TA (en) 2020-10-29

Similar Documents

Publication Publication Date Title
TWI737686B (zh) 包含具有高純度sp3 鍵之化學氣相沉積鑽石塗層的電漿處理系統用之邊緣環等元件
TWI763969B (zh) 用於電漿處理中之均勻性控制的漸縮上電極
TWI783960B (zh) 具有改良的處理均勻性之基板支撐件
CN110506326B (zh) 可移动的边缘环设计
JP7062383B2 (ja) アーク放電および点火を防ぎプロセスの均一性を向上させるための特徴を有する静電チャック
CN110337714B (zh) 一种衬底支撑件和衬底处理系统
TWI827654B (zh) 用於基板處理系統之侷限環與在基板處理系統中使用侷限環的方法
JP7608471B2 (ja) 基板処理システムのための高精度エッジリングのセンタリング
KR102826769B1 (ko) 기판 프로세싱 시스템들에서 로드 록들에 대한 자동 세정
TW202107594A (zh) 在處理腔室中基板的高溫加熱
TWI883051B (zh) 包含預熱噴淋頭的低溫電漿輔助化學氣相沉積製程
TW202329191A (zh) 用於薄介電膜沉積的變壓器耦合電漿源設計
JP2018014491A (ja) 粒子性能および金属性能の改善のためのｅｓｃセラミック側壁の加工
TWI849145B (zh) 基板處理系統用的縮小直徑承載環硬件
TWI872042B (zh) 包含下游電漿用雙離子過濾器的基板處理系統
TW202431339A (zh) 用於產生原位清潔電漿的圓頂形腔室