TWI737247B - Cutting device and manufacturing method of cut product - Google Patents
Cutting device and manufacturing method of cut product Download PDFInfo
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- TWI737247B TWI737247B TW109111274A TW109111274A TWI737247B TW I737247 B TWI737247 B TW I737247B TW 109111274 A TW109111274 A TW 109111274A TW 109111274 A TW109111274 A TW 109111274A TW I737247 B TWI737247 B TW I737247B
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- 238000005520 cutting process Methods 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 157
- 230000007246 mechanism Effects 0.000 claims abstract description 112
- 238000001035 drying Methods 0.000 claims abstract description 93
- 238000004140 cleaning Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 230000007723 transport mechanism Effects 0.000 claims abstract description 19
- 239000007921 spray Substances 0.000 claims description 15
- 238000001694 spray drying Methods 0.000 claims description 12
- 238000004806 packaging method and process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 3
- 238000007689 inspection Methods 0.000 description 58
- 230000003287 optical effect Effects 0.000 description 24
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- 229920005989 resin Polymers 0.000 description 21
- 230000032258 transport Effects 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 238000012790 confirmation Methods 0.000 description 11
- 238000007789 sealing Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02076—Cleaning after the substrates have been singulated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本發明提供一種能夠有效地進行半導體封裝的乾燥的切斷裝置及切斷品的製造方法。本發明的切斷裝置將經樹脂密封的封裝基板切斷成多個半導體封裝,包含:切斷機構,切斷所述封裝基板;搬送機構,吸附保持並搬送已利用所述切斷機構切斷的所述半導體封裝;清洗機構,對利用所述搬送機構搬送的所述半導體封裝進行清洗;及抽吸乾燥機構,對已利用所述清洗機構清洗的所述半導體封裝進行抽吸乾燥。The present invention provides a cutting device capable of efficiently drying a semiconductor package and a method for manufacturing a cut product. The cutting device of the present invention cuts a resin-sealed package substrate into a plurality of semiconductor packages, and includes: a cutting mechanism to cut the package substrate; a conveying mechanism to suck, hold and convey the cut by the cutting mechanism The semiconductor package; a cleaning mechanism for cleaning the semiconductor package transported by the transport mechanism; and a suction drying mechanism for suction drying the semiconductor package that has been cleaned by the cleaning mechanism.
Description
本發明有關於一種切斷裝置及切斷品的製造方法的技術。The present invention relates to the technology of a cutting device and a method of manufacturing a cut product.
專利文獻1中,公開了一種對已切割的工件(半導體封裝)進行清洗後,搬送到後續處理步驟的切割裝置。記載了如下技術:所述切割裝置中,利用噴射噴嘴噴出清洗液,清洗附著於工件的粉塵等之後,利用乾燥噴嘴噴出空氣,進行工件的乾燥。
[現有技術文獻]
[專利文獻] [專利文獻1]日本專利特開2003-163180號公報[Patent Literature] [Patent Document 1] Japanese Patent Laid-Open No. 2003-163180
[發明所要解決的問題]
在如專利文獻1中公開的切割裝置那樣噴出空氣來進行工件的乾燥的情況下,有時例如若半導體封裝間的距離短,那麼僅僅是使水滴在工件彼此的間隙內移動而難以將水滴去除。也就是說,擔心無法充分進行乾燥,產生工件殘留水跡等外觀不良。[The problem to be solved by the invention]
In the case of spraying air to dry the workpiece as in the cutting device disclosed in
本發明是鑒於如上狀況而成,其所要解決的問題是提供一種能夠有效地進行半導體封裝的乾燥的切斷裝置及切斷品的製造方法。The present invention is made in view of the above situation, and the problem to be solved is to provide a cutting device capable of efficiently drying a semiconductor package and a method of manufacturing a cut product.
[解決問題的技術手段] 本發明所要解決的問題如上所述,為了解決所述問題,本發明的切斷裝置將經樹脂密封的封裝基板切斷成多個半導體封裝,包含:切斷機構,切斷所述封裝基板;搬送機構,吸附保持並搬送已利用所述切斷機構切斷的所述半導體封裝;清洗機構,對利用所述搬送機構搬送的所述半導體封裝進行清洗;及抽吸乾燥機構,對已利用所述清洗機構清洗的所述半導體封裝進行抽吸乾燥。[Technical means to solve the problem] The problem to be solved by the present invention is as described above. In order to solve the problem, the cutting device of the present invention cuts a resin-sealed package substrate into a plurality of semiconductor packages, including: a cutting mechanism to cut the package substrate; A conveying mechanism that sucks, holds, and conveys the semiconductor package that has been cut by the cutting mechanism; a cleaning mechanism that cleans the semiconductor package that is conveyed by the conveying mechanism; and a suction drying mechanism that performs The semiconductor package cleaned by the cleaning mechanism is suction dried.
另外,本發明的切斷品的製造方法包含:切斷步驟,將經樹脂密封的封裝基板切斷成多個半導體封裝;搬送步驟,搬送在所述切斷步驟中切斷的所述半導體封裝;清洗步驟,對在所述搬送步驟中搬送的所述半導體封裝進行清洗;及抽吸乾燥步驟,對已在所述清洗步驟中清洗的所述半導體封裝進行抽吸乾燥。In addition, the method of manufacturing a cut product of the present invention includes a cutting step of cutting a resin-sealed package substrate into a plurality of semiconductor packages; and a conveying step of conveying the semiconductor package cut in the cutting step A cleaning step, cleaning the semiconductor package transported in the transport step; and a suction drying step, suction drying the semiconductor package that has been cleaned in the cleaning step.
[發明的效果] 根據本發明,能夠有效地進行半導體封裝的乾燥。[Effects of the invention] According to the present invention, the semiconductor package can be dried efficiently.
<第一實施方式>
首先,使用圖1及圖2,對第一實施方式的切斷裝置1的構成、及使用切斷裝置1的切斷品的製造方法進行說明。在本實施方式中,例如,對使用封裝基板P作為利用切斷裝置1的切斷對象物時的切斷裝置1的構成進行說明,所述封裝基板P是將安裝有半導體晶片的基板樹脂密封而成。<First Embodiment>
First, using FIGS. 1 and 2, the configuration of the
作為封裝基板P,例如使用球柵陣列(Ball grid array,BGA)封裝基板、柵格陣列(Land Grid Array,LGA)封裝基板、晶片尺寸封裝(Chip size package,CSP)封裝基板、發光二極管(Light emitting diode,LED)封裝基板等。另外,作為切斷對象物,不僅使用封裝基板P,有時也使用密封的引線框架,所述密封的引線框架是將安裝有半導體晶片的引線框架(lead frame)樹脂密封而成。As the package substrate P, for example, a ball grid array (BGA) package substrate, a Land Grid Array (LGA) package substrate, a chip size package (CSP) package substrate, and a light emitting diode (Light Emitting Diode) package substrate are used. Emitting diode, LED) package substrate, etc. In addition, as the object to be cut, not only the package substrate P but also a sealed lead frame may be used. The sealed lead frame is formed by resin sealing a lead frame on which a semiconductor chip is mounted.
此外,以下,將封裝基板P的兩面中樹脂密封側的面稱為模面(mold face),將與模面相反側的面稱為焊球面(ball face)/引線面(lead face)。In addition, in the following, the surface on the resin-sealed side of the two surfaces of the package substrate P is referred to as a mold face, and the surface on the opposite side to the mold surface is referred to as a ball face/lead face.
切斷裝置1包含切斷模塊A及檢查模塊B作為構成元件。各構成元件相對於其它構成元件能夠裝卸且能夠更換。以下,依次對切斷模塊A及檢查模塊B的構成、利用切斷模塊A及檢查模塊B進行的作業步驟進行說明。The
切斷模塊A是主要進行封裝基板P的切斷的構成元件。切斷模塊A主要包含基板供給機構2、定位機構3、切斷台4、主軸(spindle)5、第一清潔器6、搬送機構20、第二清潔器30及控制部9。The cutting module A is a component that mainly performs cutting of the package substrate P. The cutting module A mainly includes a
在切斷模塊A中,首先進行供給步驟S2。供給步驟S2是使用基板供給機構2供給封裝基板P的步驟。基板供給機構2從收容有多個封裝基板P的料盒(magazine)M逐片推出封裝基板P,向後述定位機構3供給。封裝基板P配置成焊球面/引線面朝上。In the cutting module A, first, the supply step S2 is performed. The supply step S2 is a step of supplying the package substrate P using the
接下來,在切斷模塊A中,進行定位步驟S4。定位步驟S4是使用定位機構3進行從基板供給機構2供給的封裝基板P的定位的步驟。定位機構3將從基板供給機構2推出的封裝基板P配置在軌道部3a,進行定位。此後,定位機構3將已定位的封裝基板P向後述切斷台4搬送。Next, in the cutting module A, a positioning step S4 is performed. The positioning step S4 is a step of using the
接下來,在切斷模塊A中,進行切斷步驟S6。切斷步驟S6是使用切斷台4及主軸5將封裝基板P切斷,獲得作為切斷品的半導體封裝S的步驟。Next, in the cutting module A, a cutting step S6 is performed. The cutting step S6 is a step of cutting the package substrate P using the cutting table 4 and the
切斷台4保持要切斷的封裝基板P。在本實施方式中,例示包含兩個切斷台4的雙切割台構成的切斷裝置1。在切斷台4,設置著保持構件4a,所述保持構件4a從下方吸附保持利用定位機構3搬送來的封裝基板P。另外,在切斷台4,設置著能夠使保持構件4a向圖中θ方向旋轉的旋轉機構4b、及能夠使保持構件4a向圖中Y方向移動的移動機構4c。The cutting table 4 holds the package substrate P to be cut. In the present embodiment, the
作為切斷機構的主軸5將封裝基板P切斷,單片化成多個半導體封裝S(參照圖3)。在本實施方式中,例示包含兩個主軸5的雙主軸構成的切斷裝置1。主軸5能夠向圖中X方向及Z方向移動。在主軸5,安裝著用於切斷封裝基板P的旋轉刀5a。The
在主軸5,設置著向高速旋轉的旋轉刀5a噴射切削水的切削水用噴嘴、噴射冷卻水的冷卻水用噴嘴、及噴射清洗切斷屑等的清洗水的清洗水用噴嘴(均未圖示)等。The
切斷台4吸附封裝基板P後,利用第一位置確認相機4d,確認封裝基板P的位置。此後,切斷台4以沿著圖中Y方向靠近主軸5的方式移動。當切斷台4移動到主軸5的下方後,使切斷台4與主軸5相對移動,由此切斷封裝基板P。每次利用主軸5切斷封裝基板P時,均利用第二位置確認相機5b確認封裝基板P的位置等。After the cutting table 4 sucks the package substrate P, the first
此處,利用第一位置確認相機4d進行的確認例如可以確認設置在封裝基板P的表示切斷位置的標記的位置。利用第二位置確認相機5b進行的確認例如可以確認封裝基板P被切斷的位置、被切斷的寬度等。此外,所述利用確認相機進行的確認也可以不使用第一位置確認相機4d,僅使用第二位置確認相機5b進行確認。Here, the confirmation by the first
接下來,在切斷模塊A中,進行第一清洗步驟S8及第一乾燥步驟S10。第一清洗步驟S8是使用第一清潔器6,對通過切斷封裝基板P單片化而成的多個半導體封裝S進行清洗的步驟。另外,第一乾燥步驟S10是使用第一清潔器6,對已清洗的半導體封裝S進行乾燥的步驟。Next, in the cutting module A, the first cleaning step S8 and the first drying step S10 are performed. The first cleaning step S8 is a step of cleaning the plurality of semiconductor packages S formed by cutting the package substrate P into pieces by using the
切斷台4在封裝基板P的切斷結束後,保持吸附著已單片化的多個半導體封裝S的狀態,以沿著圖中Y方向離開主軸5的方式移動。此時,第一清潔器6使用適當的清洗液進行半導體封裝S的上表面(焊球面/引線面)的清洗(第一清洗步驟S8)。另外,第一清潔器6對半導體封裝S的上表面噴射氣體(空氣),進行半導體封裝S的上表面的乾燥(第一乾燥步驟S10)。After the cutting of the package substrate P is completed, the cutting table 4 maintains a state of adsorbing the plurality of singulated semiconductor packages S, and moves so as to move away from the
接下來,在切斷模塊A中,進行搬送步驟S12、作為清洗步驟的第二清洗步驟S14、及作為抽吸乾燥步驟的第二乾燥步驟S16。搬送步驟S12是使用搬送機構20,將半導體封裝S向檢查模塊B的檢查台11搬送的步驟。另外,第二清洗步驟S14是使用第二清潔器30,對半導體封裝S進行清洗的步驟。另外,第二乾燥步驟S16是使用第二清潔器30,對已清洗的半導體封裝S進行乾燥的步驟。Next, in the cutting module A, a transport step S12, a second cleaning step S14 as a cleaning step, and a second drying step S16 as a suction drying step are performed. The transport step S12 is a step of transporting the semiconductor package S to the inspection table 11 of the inspection module B using the
搬送機構20從上方吸附由切斷台4保持的半導體封裝S,向檢查模塊B搬送(搬送步驟S12)。另外,在搬送機構20將半導體封裝S向檢查模塊B搬送的路徑的中途,利用第二清潔器30進行半導體封裝S的下表面(模面)的清洗(第二清洗步驟S14)及乾燥(第二乾燥步驟S16)。The
具體來說,第二清潔器30包含清洗機構40及抽吸乾燥機構50。清洗機構40包含可旋轉的刷(未圖示)。清洗機構40通過使含清洗液的刷一邊旋轉一邊接觸半導體封裝S的下表面(模面),來進行半導體封裝S的清洗(第二清洗步驟S14)。另外,抽吸乾燥機構50通過抽吸附著在半導體封裝S的下表面(模面)的清洗液,來進行半導體封裝S的乾燥(第二乾燥步驟S16)。Specifically, the
此外,對於利用抽吸乾燥機構50進行半導體封裝S的乾燥的情形,將在下文進行詳細說明。In addition, the case where the semiconductor package S is dried by the
如上所述的切斷模塊A的各部(基板供給機構2、定位機構3、切斷台4、主軸5、第一清潔器6、搬送機構20及第二清潔器30等)的運行是利用控制部9進行控制。另外,能夠使用控制部9任意變更(調整)切斷模塊A的各部的運行。The operation of the various parts of the cutting module A (the
檢查模塊B是主要進行半導體封裝S的檢查的構成元件。檢查模塊B主要包含檢查台11、第一光學檢查相機12、第二光學檢查相機13、配置機構14、抽取機構15及控制部16。The inspection module B is a constituent element that mainly performs inspection of the semiconductor package S. The inspection module B mainly includes an inspection table 11, a first
在檢查模塊B中,首先進行檢查步驟S18。檢查步驟S18是使用檢查台11、第一光學檢查相機12及第二光學檢查相機13對半導體封裝S進行光學檢查的步驟。In the inspection module B, the inspection step S18 is first performed. The inspection step S18 is a step of optically inspecting the semiconductor package S using the inspection table 11, the first
檢查台11保持半導體封裝S以進行光學檢查。檢查台11能夠沿著圖中X方向移動。另外,檢查台11能夠上下翻轉。在檢查台11設置著吸附保持半導體封裝S的保持構件11a。The inspection table 11 holds the semiconductor package S for optical inspection. The inspection table 11 can move along the X direction in the figure. In addition, the inspection table 11 can be turned upside down. The inspection table 11 is provided with a holding
第一光學檢查相機12及第二光學檢查相機13對半導體封裝S的表面(焊球面/引線面及模面)進行光學檢查。第一光學檢查相機12及第二光學檢查相機13朝上配置在檢查台11附近。在第一光學檢查相機12及第二光學檢查相機13分別設置著能夠在檢查時照射光的照明裝置(未圖示)。The first
第一光學檢查相機12對利用搬送機構20搬送到檢查台11的半導體封裝S的模面進行檢查。此後,搬送機構20在檢查台11的保持構件11a載置半導體封裝S。保持構件11a吸附保持半導體封裝S後,檢查台11上下翻轉。檢查台11向第二光學檢查相機13的上方移動,利用第二光學檢查相機13對半導體封裝S的焊球面/引線面進行檢查。The first
例如,第一光學檢查相機12能夠檢查半導體封裝S的缺口或半導體封裝S上所標示的文字等。另外,例如第二光學檢查相機13能夠檢查半導體封裝S的尺寸和形狀、焊球/引線的位置等。For example, the first
配置機構14用於配置檢查結束的半導體封裝S。配置機構14能夠沿著圖中Y方向移動。檢查台11將利用第一光學檢查相機12及第二光學檢查相機13的檢查結束的半導體封裝S配置於配置機構14。The
接下來,在檢查模塊B中,進行收容步驟S20。收容步驟S20是使用抽取機構15,將配置在配置機構14的半導體封裝S移送並收容到托盤的步驟。基於利用第一光學檢查相機12及第二光學檢查相機13獲得的檢查結果,區分良品與不良品,區分後的半導體封裝S利用抽取機構15收納到托盤。此時,抽取機構15分別將半導體封裝S中的良品收納到良品用托盤15a,將不良品收納到不良品托盤15b。當托盤中裝滿半導體封裝S時,適當供給另外的空托盤。Next, in the inspection module B, an accommodation step S20 is performed. The storing step S20 is a step of using the
如上所述的檢查模塊B的各部(檢查台11、第一光學檢查相機12、第二光學檢查相機13、配置機構14及抽取機構15等)的運行是利用控制部16進行控制。另外,能夠使用控制部16任意變更(調整)檢查模塊B的各部的運行。The operations of the various parts of the inspection module B (the inspection table 11, the first
如上所述,本實施方式的切斷裝置1能夠將封裝基板P切斷,單片化成多個半導體封裝S。As described above, the
接下來,使用圖3至圖6,對所述第二乾燥步驟S16中使用的搬送機構20及抽吸乾燥機構50的構成進行說明。此外,以下將圖中所示的箭頭U、箭頭D、箭頭L、箭頭R、箭頭F及箭頭B所表示的方向分別定義為上方向、下方向、左方向、右方向、前方向及後方向來進行說明。另外,為了便於說明,將圖中所示的各構件適當簡化圖示。實際的各構件(搬送機構20及抽吸乾燥機構50)的構成(例如各構件的形狀、大小、孔的個數或配置等)並不限定於圖示。Next, the configuration of the conveying
如上所述,圖3所示的搬送機構20吸附並搬送半導體封裝S。搬送機構20主要包含搬送底座21及樹脂片材22。As described above, the
搬送底座21能夠利用適當的驅動機構(作為動力源的馬達、傳遞來自馬達的動力的齒輪等)向規定的方向移動。搬送底座21形成為俯視大致矩形板狀。搬送底座21以厚度方向成為上下方向的方式配置。The
圖3及圖4所示的樹脂片材22吸附保持半導體封裝S。作為樹脂片材22的原材料,例如使用矽酮系樹脂或氟系樹脂等。樹脂片材22形成為俯視大致矩形板狀。樹脂片材22以厚度方向成為上下方向的方式配置。樹脂片材22的前後寬度及左右寬度分別形成為小於搬送底座21的前後寬度及左右寬度。在樹脂片材22主要形成著吸附孔22a。The
吸附孔22a是用來吸附半導體封裝S的孔。吸附孔22a以在上下方向(厚度方向)貫通樹脂片材22的方式形成。吸附孔22a以前後及左右隔開固定間隔排列的方式形成有多個。吸附孔22a的下端部(在樹脂片材22的下表面開口的部分)以相比上方的其它部分擴大的方式形成。The
樹脂片材22固定在搬送底座21的下表面的大致中央。樹脂片材22的吸附孔22a經由形成在搬送底座21的連接孔(未圖示)連接到真空泵等抽吸裝置(未圖示)。通過利用所述抽吸裝置抽吸空氣來吸附半導體封裝S,並以與樹脂片材22的下表面接觸的狀態保持所述半導體封裝S。通過在每個吸附孔22a吸附一個半導體封裝S,將所述半導體封裝S前後及左右排列配置。The
如上所述,圖3及圖5所示的抽吸乾燥機構50進行半導體封裝S的乾燥。抽吸乾燥機構50主要包含抽吸底座51、抽吸板52及支撐構件53。As described above, the
抽吸底座51支撐後述抽吸板52。抽吸底座51形成為朝向上方開口的大致長方體狀(箱狀)。抽吸底座51主要包含凹部51a、貫通孔51b及密封構件51c。The
凹部51a是形成在抽吸底座51的上表面的凹陷。凹部51a形成為俯視大致矩形狀。凹部51a的上部以相比下部擴大的方式(前後寬度度及左右寬度變大的方式)形成。由此,在凹部51a的上下中途部形成階差。The
貫通孔51b是在上下方向上貫通抽吸底座51的孔。貫通孔51b形成在抽吸底座51的大致中央。由此,貫通孔51b將抽吸底座51的下表面側與抽吸底座51的凹部51a連接。The through
密封構件51c在抽吸底座51與搬送底座21相接時,提升抽吸底座51與搬送底座21之間的氣密性。密封構件51c例如由具有彈性的橡膠等形成。密封構件51c在抽吸底座51的上表面配置在以包圍凹部51a的方式形成的槽內。The sealing
圖3、圖5及圖6所示的抽吸板52形成用於抽吸附著在半導體封裝S的水分的空氣的通路。抽吸板52形成為俯視大致矩形板狀。抽吸板52以厚度方向成為上下方向的方式配置。抽吸板52的前後寬度及左右寬度以與抽吸底座51的凹部51a的上部成為大致相同的方式形成。由此,當將抽吸板52配置在凹部51a內時,抽吸板52載置於凹部51a的階差,由凹部51a的上下中途部保持。在抽吸板52主要形成有抽吸孔52a及槽部52b。The
抽吸孔52a是在上下方向(厚度方向)貫通抽吸板52的孔。抽吸孔52a以前後及左右隔開固定間隔排列的方式形成有多個。The
槽部52b是形成在抽吸板52的上表面(與半導體封裝S相對的面)的凹陷。槽部52b形成為在俯視(參照圖6的(a))時從外側包圍多個(至少兩個以上)抽吸孔52a的形狀。槽部52b以連接前後鄰接的抽吸孔52a的方式形成。槽部52b形成為使長邊方向朝向前後的長邊狀(直線狀)。槽部52b的寬度(與長邊方向垂直的方向的寬度)形成得比要進行乾燥的半導體封裝S的寬度小。槽部52b左右隔開固定間隔形成有多個。The
圖3及圖5所示的支撐構件53支撐抽吸板52。支撐構件53形成為俯視格子狀。支撐構件53的上下寬度形成為與凹部51a的階差的高度大致相同。支撐構件53配置在凹部51a內(抽吸板52的下方)。由此,支撐構件53能夠從下方支撐抽吸板52的大致整個面。此外,圖7以後,為了簡化,省略支撐構件53的圖示。The
抽吸底座51的貫通孔51b連接於真空泵等抽吸裝置(未圖示)。通過利用所述抽吸裝置抽吸空氣,經由形成在抽吸板52的抽吸孔52a及槽部52b,將抽吸板52的上方的空氣向抽吸板52的下方抽吸。The through
接下來,對所述第二乾燥步驟S16的搬送機構20及抽吸乾燥機構50的運行進行說明。Next, the operations of the conveying
首先,如圖7的(a)所示,位於抽吸乾燥機構50的上方的搬送機構20向下方移動,使半導體封裝S接觸抽吸板52。此時,抽吸底座51的上表面與搬送底座21的下表面接觸。利用密封構件51c填埋抽吸底座51與搬送底座21的間隙,保證氣密性。First, as shown in FIG. 7( a ), the conveying
接下來,如圖8所示,使連接於抽吸底座51的貫通孔51b的抽吸裝置(未圖示)驅動,經由貫通孔51b對抽吸底座51內的空氣進行抽吸。由此,經由抽吸板52的抽吸孔52a及槽部52b將抽吸板52的上方的空氣向下方抽吸。利用所述抽吸力,能夠將與槽部52b相對的部分(具體來說為半導體封裝S的下表面(模面)、或鄰接的半導體封裝S彼此的間隙等)的水分(清洗液)向抽吸板52的下方抽吸,從而使半導體封裝S乾燥。Next, as shown in FIG. 8, a suction device (not shown) connected to the through
此時,能夠利用搬送底座21與抽吸底座51之間的密封構件51c防止空氣從外部流入。由此,能夠防止抽吸力(負壓)降低。At this time, the sealing
另外,通過將槽部52b的寬度形成為小於半導體封裝S的寬度(左右寬度),能夠利用抽吸板52的上表面從下方推壓半導體封裝S的下表面。由此,能夠防止經由抽吸板52的抽吸力導致半導體封裝S從搬送機構20脫落。In addition, by forming the width of the
另外,通過利用支撐構件53(參照圖3及圖5)從下方支撐抽吸板52,能夠防止用於乾燥的抽吸力導致抽吸板52變形(向下方撓曲)。In addition, by supporting the
在圖7的(a)所示的狀態下乾燥(抽吸)任意時間後,如圖7的(b)所示,搬送機構20向上方移動,半導體封裝S離開抽吸板52。進而,搬送機構20向與槽部52b的長邊方向(前後方向)不同的方向(圖7的例中為右方向)移動。此時,搬送機構20向右方向移動與槽部52b的寬度相當的距離。After drying (suction) in the state shown in (a) of FIG. 7 for an arbitrary period of time, as shown in (b) of FIG. 7, the
接下來,如圖7的(c)所示,搬送機構20再次向下方移動,使半導體封裝S接觸抽吸板52。在此狀態下,使抽吸裝置驅動,經由抽吸板52抽吸空氣,使半導體封裝S乾燥。Next, as shown in FIG. 7( c ), the
如上所述,在第二乾燥步驟S16中,交替反復進行任意次數利用搬送機構20的移動與利用抽吸乾燥機構50的抽吸,由此進行半導體封裝S的乾燥。此外,就對半導體封裝S的下表面整個區域進行抽吸的觀點來說,搬送機構20的移動與抽吸的次數理想的是至少進行“(槽部52b的間距)/(槽部52b的寬度)+1”次以上。As described above, in the second drying step S16, the movement by the conveying
如上所述,本實施方式的切斷裝置1將經樹脂密封的封裝基板P切斷成多個半導體封裝S,包含:
切斷機構(主軸5),切斷所述封裝基板P;
搬送機構20,吸附保持並搬送已利用所述切斷機構切斷的所述半導體封裝S;
清洗機構40,對利用所述搬送機構20搬送的所述半導體封裝S進行清洗;及
抽吸乾燥機構50,對已利用所述清洗機構清洗的所述半導體封裝S進行抽吸乾燥。As described above, the
通過以所述方式構成,能夠有效地進行半導體封裝S的乾燥。也就是說,有時對半導體封裝S噴出氣體進行的乾燥僅僅是使水滴(清洗液)在半導體封裝S彼此的間隙內移動,難以將水滴去除。然而,通過像本實施方式那樣對半導體封裝S進行抽吸乾燥,不易產生如上所述的水滴移動,能夠有效地使半導體封裝S乾燥。By configuring in this manner, the semiconductor package S can be dried efficiently. That is, the drying of the gas ejected from the semiconductor package S merely moves the water droplets (cleaning liquid) in the gap between the semiconductor packages S, and it is difficult to remove the water droplets. However, by sucking and drying the semiconductor package S as in the present embodiment, the movement of water droplets as described above is less likely to occur, and the semiconductor package S can be dried effectively.
另外,所述抽吸乾燥機構50包含具有多個抽吸孔52a的抽吸板52。In addition, the
通過以所述方式構成,能夠經由多個抽吸孔52a抽吸半導體封裝S的水分。如上所述,並非直接抽吸半導體封裝S,而是通過經由抽吸孔52a來提升抽吸力(負壓),能夠有效地進行半導體封裝S的乾燥。另外,通過根據作為乾燥對象的半導體封裝S的配置等適當設定多個抽吸孔52a的配置(例如配置在與容易附著水滴的半導體封裝S彼此的間隙相對的位置),也能夠有效地使半導體封裝S乾燥。By configuring in this manner, the moisture of the semiconductor package S can be sucked through the plurality of
另外,所述抽吸板52在與所述半導體封裝S相對的面,包含以將所述多個抽吸孔52a相互連接的方式形成的槽部52b。In addition, the
通過以所述方式構成,能夠高效地進行半導體封裝S的乾燥。也就是說,通過形成槽部52b,能夠擴大可抽吸水分的範圍,從而能夠高效地使半導體封裝S乾燥。By configuring in this way, the semiconductor package S can be dried efficiently. That is, by forming the
另外,本實施方式的切斷品的製造方法包含: 切斷步驟S6,將經樹脂密封的封裝基板P切斷成多個半導體封裝S; 搬送步驟S12,搬送在所述切斷步驟S6中切斷的所述半導體封裝S; 清洗步驟(第二清洗步驟S14),對所述搬送步驟S12中搬送的所述半導體封裝S進行清洗;及 抽吸乾燥步驟(第二乾燥步驟S16),對已在所述清洗步驟中清洗的所述半導體封裝S進行抽吸乾燥。In addition, the method of manufacturing a cut product of this embodiment includes: Cutting step S6, cutting the resin-sealed package substrate P into a plurality of semiconductor packages S; Conveying step S12, conveying the semiconductor package S cut in the cutting step S6; A cleaning step (second cleaning step S14), cleaning the semiconductor package S transported in the transport step S12; and In the suction drying step (the second drying step S16), the semiconductor package S that has been cleaned in the cleaning step is suction dried.
通過以所述方式構成,能夠有效地進行半導體封裝S的乾燥。By configuring in this manner, the semiconductor package S can be dried efficiently.
另外,在所述抽吸乾燥步驟中,使所述半導體封裝S向規定的方向移動。In addition, in the suction drying step, the semiconductor package S is moved in a predetermined direction.
通過以所述方式構成,能夠有效地進行半導體封裝S的乾燥。也就是說,通過使半導體封裝S移動,能夠擴大抽吸水分的範圍,從而能夠高效地使半導體封裝S乾燥。By configuring in this manner, the semiconductor package S can be dried efficiently. That is, by moving the semiconductor package S, the range in which moisture can be sucked can be expanded, and the semiconductor package S can be dried efficiently.
<第二實施方式> 接下來,使用圖9及圖10,對第二實施方式進行說明。<Second Embodiment> Next, the second embodiment will be described using FIGS. 9 and 10.
第二實施方式的抽吸板152主要包含抽吸孔152a及槽部152b。第二實施方式的抽吸板152的抽吸孔152a及槽部152b的位置或形狀等與第一實施方式的抽吸板52(參照圖6)不同。The
具體來說,抽吸孔152a以排列在相對於前後方向傾斜的方向的方式形成有多個。在本實施方式中,抽吸孔152a以從左後方向右前方排列的方式形成。Specifically, a plurality of
另外,槽部152b形成為將以相對於前後方向傾斜的方式排列的抽吸孔152a彼此連接。也就是說,槽部152b形成為使長邊方向朝向相對於前後方向傾斜的方向的直線狀。即,槽部152b相對於半導體封裝S排列的方向(前後方向及左右方向)傾斜地形成。In addition, the
接下來,對使用第二實施方式的抽吸板152進行第二乾燥步驟S16的情形進行說明。Next, a case where the second drying step S16 is performed using the
第二乾燥步驟S16中,在利用搬送機構20使半導體封裝S接觸抽吸板152的狀態下,如圖10的(a)所示,俯視時,槽部152b以相對於半導體封裝S排列的方向(前後方向及左右方向)傾斜的方式配置。In the second drying step S16, in a state where the semiconductor package S is brought into contact with the
此處,如圖10的(b)所示,第一實施方式的抽吸板52的槽部52b與半導體封裝S排列的方向(前後方向)平行。因此,在槽部52b位於左右鄰接的半導體封裝S之間的情況下,槽部52b的大部分與半導體封裝S彼此的間隙相對。Here, as shown in FIG. 10( b ), the
如果在如上所述的狀態下經由抽吸板52進行抽吸,那麼會經由槽部52b從半導體封裝S彼此的間隙抽吸比較大量的空氣。因此,擔心用於抽吸的負壓降低、進而抽吸力降低。If suction is performed through the
與此相對,圖10的(a)所示的第二實施方式的抽吸板52的槽部152b以相對於半導體封裝S排列的方向傾斜的方式配置。因此,槽部152b的至少一部分與半導體封裝S相對。由此,能夠防止從半導體封裝S彼此的間隙抽吸大量的空氣。因此,能夠抑制用於抽吸的負壓下降、抽吸力下降。In contrast, the
如上所述,本實施方式的槽部152b相對於所述半導體封裝S排列的方向傾斜地形成。As described above, the
通過以所述方式構成,能夠有效地進行半導體封裝S的乾燥。也就是說,通過使槽部152b的至少一部分與半導體封裝S相對,能夠抑制負壓下降,進而能夠抑制抽吸力下降。By configuring in this manner, the semiconductor package S can be dried efficiently. That is, by making at least a part of the
<第三實施方式> 接下來,使用圖11及圖12對第三實施方式進行說明。<The third embodiment> Next, the third embodiment will be described using FIGS. 11 and 12.
第三實施方式的切斷裝置1除包含抽吸乾燥機構50外,還包含噴射乾燥機構60(參照圖11)。噴射乾燥機構60通過對半導體封裝S噴射氣體來進行半導體封裝S的乾燥。噴射乾燥機構60主要包含噴射噴嘴61。The
噴射噴嘴61是噴射氣體的構件。在噴射噴嘴61的內部,形成著引導氣體的孔。噴射噴嘴61連接於鼓風機等壓縮機(未圖示)。當利用所述壓縮機壓送空氣時,所述空氣經由噴射噴嘴61噴射。在本實施方式中,噴射噴嘴61以朝向上方噴射氣體的方式配置。The
接下來,對使用第三實施方式的切斷裝置1的切斷品的製造方法進行說明。如圖12所示,第三實施方式的切斷品的製造方法與第一實施方式的切斷品的製造方法(參照圖2)的不同之處在於,包含作為噴射乾燥步驟的第三乾燥步驟S17。Next, a method of manufacturing a cut product using the
第三乾燥步驟S17在第二乾燥步驟S16之後進行。在第三乾燥步驟S17中,在使噴射噴嘴61與半導體封裝S的下表面相對的狀態下,從噴射噴嘴61向半導體封裝S噴射氣體。由此,能夠去除附著於半導體封裝S的水滴,進行乾燥。此時,通過使半導體封裝S(搬送機構20)或噴射噴嘴61(噴射乾燥機構60)適當移動,也能夠對半導體封裝S的大範圍噴射氣體。The third drying step S17 is performed after the second drying step S16. In the third drying step S17, in a state where the
如上所述,本實施方式的切斷裝置1還包含噴射乾燥機構60,所述噴射乾燥機構60對已利用所述清洗機構40清洗的所述半導體封裝S噴射氣體,進行乾燥。As described above, the
通過以所述方式構成,能夠更有效地進行半導體封裝S的乾燥。也就是說,通過利用抽吸乾燥機構50外,還利用噴射乾燥機構60進行乾燥,能夠更有效地使半導體封裝S乾燥。By configuring in this way, the semiconductor package S can be dried more efficiently. That is, by using the
另外,本實施方式的切斷品的製造方法還包含噴射乾燥步驟(第三乾燥步驟S17),所述噴射乾燥步驟(第三乾燥步驟S17)在所述抽吸乾燥步驟(第二乾燥步驟S16)之後,對已在所述清洗步驟(第二清洗步驟S14)中清洗的所述半導體封裝S噴射氣體而進行乾燥。In addition, the method of manufacturing a cut article of the present embodiment further includes a spray drying step (third drying step S17). The spray drying step (third drying step S17) is performed in the suction drying step (second drying step S16). ) Then, the semiconductor package S that has been cleaned in the cleaning step (the second cleaning step S14) is sprayed with gas to be dried.
通過以所述方式構成,能夠更有效地進行半導體封裝S的乾燥。By configuring in this way, the semiconductor package S can be dried more efficiently.
此外,在本實施方式中,示出在第二乾燥步驟S16之後進行第三乾燥步驟S17的例子,但並不限定於此。例如,也可以像圖13所示的變形例那樣,在第二乾燥步驟S16之前進行第三乾燥步驟S17。In addition, in this embodiment, although the example which performed the 3rd drying step S17 after the 2nd drying step S16 was shown, it is not limited to this. For example, like the modification shown in FIG. 13, you may perform the 3rd drying step S17 before the 2nd drying step S16.
<第四實施方式> 接下來,使用圖14,對第四實施方式進行說明。<Fourth Embodiment> Next, the fourth embodiment will be described using FIG. 14.
第四實施方式的切斷品的製造方法與第一實施方式的不同之處在於第二乾燥步驟S16的搬送機構20的運行。具體來說,在第四實施方式的第二乾燥步驟S16中,經由貫通孔51b對抽吸底座51內的空氣進行抽吸時,解除搬送機構20對半導體封裝S的吸附。也就是說,停止連接於搬送底座21的抽吸裝置(未圖示)。The manufacturing method of the cut product of the fourth embodiment is different from the first embodiment in the operation of the
通過如上所述解除半導體封裝S的吸附,隨著經由貫通孔51b對抽吸底座51內的空氣進行抽吸,樹脂片材22的吸附孔22a內的空氣也從樹脂片材22與半導體封裝S的間隙被向下方抽吸。由此,能夠將滲入樹脂片材22的吸附孔22a內的水分或雜質等向外部排出。By releasing the suction of the semiconductor package S as described above, as the air in the
此外,為了更容易地排出吸附孔22a內的水分等,也可以構成為在吸附孔22a連接鼓風機等壓縮機(未圖示),向下方輸送空氣。In addition, in order to more easily discharge moisture and the like in the
以上,對本發明的實施方式進行了說明,但本發明並不限定於所述實施方式,能夠在權利要求書所記載的發明的技術思想的範圍內適當變更。The embodiments of the present invention have been described above, but the present invention is not limited to the above-mentioned embodiments, and can be appropriately changed within the scope of the technical idea of the invention described in the claims.
例如,所述實施方式中例示的切斷裝置1的構成是一例,具體構成可以適當變更。For example, the configuration of the
例如,所述實施方式中,切斷模塊A及檢查模塊B分別包含控制部(控制部9及控制部16),但本發明並不限定於此,可也以將各自的控制部匯總成一個控制部,或是分割成三個以上的控制部。另外,本實施方式的切斷裝置1是包含兩個切斷台4的雙切割台構成,但本發明並不限定於此,也可以只包含一個切斷台4。另外,本實施方式的切斷裝置1是包含兩個主軸5的雙主軸構成,但本發明並不限定於此,也可以只包含主軸5。For example, in the above-mentioned embodiment, the cutting module A and the inspection module B each include a control unit (control
另外,所述實施方式所示的抽吸板52及抽吸板152(以下稱“抽吸板52等”)的構成是一例,本發明並不限定於此。例如,槽部52b的形狀也可以不是直線狀而設為任意形狀。作為一例,通過形成與半導體封裝S彼此的間隙對應的形狀(格子狀)的槽部,也能夠一次性抽吸半導體封裝S彼此的間隙的水分。In addition, the configuration of the
另外,也可以組合多個構件來形成所述實施方式所示的抽吸板52等。例如,也可以將形成有抽吸孔52a的板狀構件與形成有槽部52b的板狀構件組合(相互固定)來形成抽吸板52。In addition, a plurality of members may be combined to form the
另外,所述實施方式中,示出了在抽吸板52形成抽吸孔52a及槽部52b的例子,但本發明並不限定於此,例如也可以只形成抽吸孔52a。In addition, in the said embodiment, the example which formed the
另外,所述實施方式中,表示了在使半導體封裝S接觸抽吸板52的狀態下進行抽吸乾燥的例子,但本發明並不限定於此,例如也可以在使半導體封裝S與抽吸板52分離的狀態下進行抽吸乾燥。In addition, in the above-mentioned embodiment, the example in which the semiconductor package S is brought into contact with the
另外,所述實施方式中,表示了利用支撐構件53從下方支撐抽吸板52等的例子,但本發明並不限定於此,並非必須要使用支撐構件53。In addition, in the said embodiment, the example which supported the
另外,所述實施方式中,表示了通過利用密封構件51c填埋搬送底座21與抽吸底座51的間隙來保證氣密性的例子,但本發明並不限定於此。例如,也可以不使用密封構件51c而進行抽吸乾燥。在此情況下,雖然抽吸力(負壓)會下降,但是可以期待利用從抽吸底座51的外部流入內部(凹部51a)的空氣的流動(風壓等)來促進半導體封裝S的乾燥。In addition, in the above-mentioned embodiment, an example is shown in which the gap between the conveying
另外,所述實施方式中,表示了經由抽吸板52等抽吸清洗液的例子,但是只要能夠通過抽吸進行乾燥,並非必須要使用抽吸板52等。In addition, in the above-mentioned embodiment, the example in which the cleaning liquid is sucked through the
另外,所述實施方式的第二乾燥步驟S16的搬送機構20的運行是一例,本發明並不限定於此。也就是說,搬送機構20可以向任意方向移動任意距離,移動的次數也可以任意設定。In addition, the operation of the
1:切斷裝置 2:基板供給機構 3:定位機構 3a:軌道部 4:切斷台 4a:保持構件 4b:旋轉機構 4c:移動機構 4d:第一位置確認相機 5:主軸 5a:旋轉刀 5b:第二位置確認相機 6:第一清潔器 9:控制部 11:檢查台 11a:保持構件 12:第一光學檢查相機 13:第二光學檢查相機 14:配置機構 15:抽取機構 15a:良品用托盤 15b:不良品托盤 16:控制部 20:搬送機構 21:搬送底座 22:樹脂片材 22a:吸附孔 30:第二清潔器 40:清洗機構 50:抽吸乾燥機構 51:抽吸底座 51a:凹部 51b:貫通孔 51c:密封構件 52:抽吸板 52a:抽吸孔 52b:槽部 53:支撐構件 60:噴射乾燥機構 61:噴射噴嘴 152:抽吸板 152a:抽吸孔 152b:槽部 A:切斷模塊 B:檢查模塊 M:料盒 P:封裝基板 S:半導體封裝 S2:供給步驟 S4:定位步驟 S6:切斷步驟 S8:第一清洗步驟 S10:第一乾燥步驟 S12:搬送步驟 S14:第二清洗步驟 S16:第二乾燥步驟 S17:第三乾燥步驟 S18:檢查步驟 S20:收容步驟1: Cut off device 2: Substrate supply mechanism 3: positioning mechanism 3a: Track part 4: Cut off the table 4a: Holding member 4b: Rotating mechanism 4c: mobile mechanism 4d: Confirm the camera in the first position 5: Spindle 5a: Rotary knife 5b: The second position confirms the camera 6: The first cleaner 9: Control Department 11: Inspection table 11a: Holding member 12: The first optical inspection camera 13: The second optical inspection camera 14: Configuration organization 15: extraction agency 15a: Good product tray 15b: Defective product tray 16: Control Department 20: Transport mechanism 21: Transport base 22: Resin sheet 22a: Adsorption hole 30: second cleaner 40: Cleaning mechanism 50: Suction drying mechanism 51: Suction base 51a: recess 51b: Through hole 51c: Sealing member 52: Suction plate 52a: Suction hole 52b: Groove 53: Supporting member 60: Jet drying mechanism 61: Jet nozzle 152: Suction plate 152a: Suction hole 152b: Groove A: Cut off the module B: Check the module M: Material box P: Package substrate S: Semiconductor package S2: Supply step S4: Positioning steps S6: Cut off step S8: The first cleaning step S10: First drying step S12: Transport steps S14: Second cleaning step S16: Second drying step S17: Third drying step S18: check steps S20: Containment procedures
圖1是表示第一實施方式的切斷裝置的整體構成的平面示意圖。 圖2是表示切斷品的製造方法的圖。 圖3是表示搬送機構及抽吸乾燥機構的構成的正視剖視圖。 圖4是表示樹脂片材的仰視圖。 圖5是表示抽吸乾燥機構的平面圖。 圖6的(a)是表示抽吸板的平面圖。圖6的(b)是A-A剖視圖。 圖7的(a)是表示搬送機構向下方移動的情形的正視剖視圖。圖7的(b)是表示搬送機構向上方及右方移動的情形的正視剖視圖。圖7的(c)是表示搬送機構再次向下方移動的情形的正視剖視圖。 圖8是表示進行抽吸乾燥時的搬送機構及抽吸乾燥機構的正視剖視圖。 圖9是表示第二實施方式的抽吸板的平面圖。 圖10的(a)是表示第二實施方式的槽部與半導體封裝的位置關係的平面圖。圖10的(b)是表示第一實施方式的槽部與半導體封裝的位置關係的平面圖。 圖11是表示利用第三實施方式的噴射乾燥機構進行乾燥的情形的正視剖視圖。 圖12是表示第三實施方式的切斷品的製造方法的圖。 圖13是表示變形例的切斷品的製造方法的圖。 圖14是表示第四實施方式中進行抽吸乾燥時的搬送機構及抽吸乾燥機構的正視剖視圖。Fig. 1 is a schematic plan view showing the overall configuration of the cutting device of the first embodiment. Fig. 2 is a diagram showing a method of manufacturing a cut product. Fig. 3 is a front cross-sectional view showing the configuration of the conveying mechanism and the suction-drying mechanism. Fig. 4 is a bottom view showing the resin sheet. Fig. 5 is a plan view showing the suction drying mechanism. Fig. 6(a) is a plan view showing the suction plate. Fig. 6(b) is a cross-sectional view of A-A. Fig. 7(a) is a front cross-sectional view showing a state where the conveying mechanism moves downward. Fig. 7(b) is a front cross-sectional view showing a state where the conveying mechanism moves upward and right. Fig. 7(c) is a front cross-sectional view showing a state where the conveying mechanism moves downward again. Fig. 8 is a front cross-sectional view showing the conveying mechanism and the suction-drying mechanism during suction drying. Fig. 9 is a plan view showing the suction plate of the second embodiment. FIG. 10(a) is a plan view showing the positional relationship between the groove portion and the semiconductor package in the second embodiment. FIG. 10(b) is a plan view showing the positional relationship between the groove portion and the semiconductor package in the first embodiment. Fig. 11 is a front cross-sectional view showing a state in which the spray drying mechanism of the third embodiment is used for drying. Fig. 12 is a diagram showing a method of manufacturing a cut product of the third embodiment. Fig. 13 is a diagram showing a method of manufacturing a cut product according to a modification. Fig. 14 is a front cross-sectional view showing the conveying mechanism and the suction-drying mechanism when suction drying is performed in the fourth embodiment.
20:搬送機構 20: Transport mechanism
21:搬送底座 21: Transport base
22:樹脂片材 22: Resin sheet
22a:吸附孔 22a: Adsorption hole
50:抽吸乾燥機構 50: Suction drying mechanism
51:抽吸底座 51: Suction base
51a:凹部 51a: recess
51b:貫通孔 51b: Through hole
51c:密封構件 51c: Sealing member
52:抽吸板 52: Suction plate
52a:抽吸孔 52a: Suction hole
52b:槽部 52b: Groove
S:半導體封裝 S: Semiconductor package
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JP2019137767A JP7154195B2 (en) | 2019-07-26 | 2019-07-26 | CUTTING DEVICE AND CUTTING PRODUCT MANUFACTURING METHOD |
JP2019-137767 | 2019-07-26 |
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JP2003163180A (en) * | 2001-11-26 | 2003-06-06 | Apic Yamada Corp | Work conveying apparatus and dicing apparatus |
TW201913772A (en) * | 2017-09-07 | 2019-04-01 | 日商Towa股份有限公司 | Cutting device and method for transporting semiconductor package |
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GB2370411B (en) * | 2000-12-20 | 2003-08-13 | Hanmi Co Ltd | Handler system for cutting a semiconductor package device |
KR100385876B1 (en) * | 2000-12-20 | 2003-06-02 | 한미반도체 주식회사 | Handler System For Cutting The Semiconductor Device |
JP4287090B2 (en) * | 2002-01-15 | 2009-07-01 | Towa株式会社 | Jig for cutting resin-sealed substrates |
KR100814448B1 (en) * | 2003-12-12 | 2008-03-17 | 한미반도체 주식회사 | dry system of semiconductor package |
JP2011181936A (en) * | 2011-03-28 | 2011-09-15 | Renesas Electronics Corp | Method for manufacturing semiconductor device |
KR200468411Y1 (en) * | 2011-12-16 | 2013-08-09 | 세메스 주식회사 | Apparatus for drying semiconductor devices |
JP2016082195A (en) * | 2014-10-22 | 2016-05-16 | Towa株式会社 | Cutting device and cutting method |
KR102053480B1 (en) * | 2015-09-14 | 2019-12-06 | 한미반도체 주식회사 | Semiconductor Package Drying Apparatus And Semiconductor Strip Cutting System |
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