TWI733433B - Leveling-docking equipment for chip and substrate and method thereof - Google Patents

Abstract

A leveling-docking equipment for chip and substrate has a heating base, a mounting base, multiple gas sources, and heater. The mounting base is mounted on the heating base to form an inner gas channel and a surrounding gas channel. One of the gas sources is connected to the surrounding gas channel, and another gas source is connected to the inner gas channel. The heater is disposed above the mounting base. A substrate is heated via the mounting base, and one of the gas sources drives a sucking stream in the surrounding gas channel. Then, one of two steps as below is performed: another gas source drives a sucking stream in the inner gas channel; or, another gas source drives a blowing stream in the inner gas channel, and then drives a sucking stream in the inner gas channel.

Description

Leveling and docking equipment and method for wafer and substrate

The present invention relates to a wafer and substrate processing equipment, in particular to a wafer and substrate leveling and docking equipment and a method thereof.

The substrate (Substrate) is mainly used to carry the chip (Chip), and the internal circuit of the substrate is connected to the chip, so that the substrate forms a protective circuit and a technical function of heat conduction. According to the packaging method, the substrate can be divided into a ball grid array (BGA, Ball Grid Array) substrate or a chip scale package (CSP, Chip Scale Package) substrate.

However, when the wafer or substrate is warped and deformed due to the influence of the manufacturing process or other factors, it will make it impossible to achieve a good positioning and docking between the wafer and the substrate, which will cause the circuit to be easily damaged or the heat conduction efficiency is not good. . In other words, the flatness of the wafer and the substrate will affect the effectiveness of the docking between the wafer and the substrate.

Therefore, the object of the present invention is to provide a wafer and substrate leveling and docking equipment and method thereof, which can level the substrate and the wafer, so that the wafer is flatly butted to the substrate.

The technical means adopted by the present invention to solve the problems of the conventional technology is to provide a wafer and substrate leveling and docking equipment, including: a heating base having a heating element, a first inner through hole, and a first surrounding airflow channel. The heating element is installed on the heating base so that the temperature of the heating base is heated by the heating element to rise to a predetermined temperature, the first surrounding airflow channel is around the outer periphery of the first inner through hole, and the first inner One end of the through hole and one end of the first surrounding airflow passage penetrate to the upper surface of the heating base; the bearing seat is arranged on the upper surface of the heating base to receive the heat conducted by the heating base, and the bearing The seat has a second inner through hole and a second surrounding airflow channel. The second inner through hole and the second surrounding airflow channel are disposed between the lower surface and the upper surface of the bearing seat and pass through the bearing seat One end of the second inner through hole communicates with the one end of the first inner through hole located on the upper surface of the heating base to form an inner air channel together with the first inner through hole, and the inner airflow The channel is located at the center of the supporting seat and the heating base, and one end of the second surrounding airflow channel is connected to the one end of the first surrounding airflow channel located on the upper surface of the heating base and is connected with The first surrounding airflow channels together form a surrounding airflow channel, the surrounding airflow channel is formed in a circular distribution on the supporting seat and the heating base and surrounds the inner airflow channel; a plurality of airflow sources, in number Corresponding to the inner airflow channel and the surrounding airflow channel, one of the airflow source is connected to the surrounding airflow channel, and the other airflow source is connected to the inner airflow channel, so that the surrounding airflow channel and the inner airflow channel are formed Blowing or sucking airflow; and a heater, which is arranged above the bearing seat and is activated to release heat energy toward the bearing seat, wherein when the periphery of the substrate placed on the bearing seat warps and moves away from the bearing When the wafer to be bonded is warped away from the substrate at the center of the bonding surface relative to the outer periphery of the bonding surface, the substrate is heated by the holder and one of the air sources drives the surrounding airflow channel to form suction The airflow constitutes a vacuum suction force, and the periphery of the substrate is attached to the holder due to the heating and suction airflow. Then, one of the following steps is performed to make the substrate and the wafer pass Repeated deformation and leveling, the bonding surface of the wafer is flatly connected to the substrate due to heating by the heater, (1) the heater releases heat energy toward the wafer, and the other airflow source drives the inner airflow The channel forms a suction airflow, so that the center of the wafer is attached to the center of the substrate due to the heating by the heater and the suction airflow, and deforms as the substrate is recessed toward the holder, and then closed The heater and the other airflow source drive the inner airflow channel to form a blowing airflow to form an airflow thrust, and push the center of the substrate and the center of the wafer to reversely deform toward the heater, or (2) use the The heater releases heat energy toward the wafer, and the other airflow source drives the inner airflow channel to form a blowing airflow to form an airflow thrust, and push the substrate The center of the plate protrudes and deforms toward the warped center of the wafer. Then, the heater is turned off, and another air flow source drives the inner air flow channel to form a suction air flow to form a vacuum suction force, and pull the center of the substrate And the center of the chip deforms in the opposite direction toward the supporting seat.

In an embodiment of the present invention, a leveling and docking device for wafers and substrates is provided, which further includes a plastic support plate, the plastic support plate has a plurality of perforations, and a plurality of the perforations are formed through the plastic support plate, wherein the The bearing seat has a vent groove formed on the upper surface of the bearing seat and communicating with the inner air flow channel at the center of the bearing seat. The plastic support plate is installed on the bearing seat to cover the A venting groove, so that a plurality of the perforations are connected to the inner air flow channel through the venting groove, so that the blowing air flow or the suction air flow in the inner air flow channel can push or pull the substrate to move and deform through the plurality of perforations, and The base plate abuts against the plastic supporting plate during the displacement and deformation process, and the plastic supporting plate provides the supporting force of the base plate.

In one embodiment of the present invention, a leveling and docking device for wafers and substrates is provided, which further includes a photomask, the photomask is disposed above the holder and between the holder and the heater, so that The heat energy released by the heater passes through the photomask to the wafer.

In an embodiment of the present invention, a leveling and docking device for wafers and substrates is provided, wherein the heating base has a plurality of the first surrounding airflow channels, and the supporting seat has a plurality of the second surrounding airflow channels. In a one-to-one manner, a plurality of the first surrounding airflow passages are matched to form a plurality of the surrounding airflow passages, and the plurality of the surrounding airflow passages are spaced from the inner airflow passage toward the heating base and the supporting seat. Distributed settings at the periphery.

In an embodiment of the present invention, a leveling and docking device for wafers and substrates is provided, wherein the supporting seat is a block made of ceramic material.

In one embodiment of the present invention, a leveling and docking device for wafers and substrates is provided, wherein the heater is an infrared light source, and the infrared light of the heater passes through a mask to apply heat to the wafer.

In an embodiment of the present invention, a leveling and docking device for wafers and substrates is provided, wherein the heating base is a metal block, and the heating element is an electric heating element embedded in the heating base.

In an embodiment of the present invention, a leveling and docking device for a chip and a substrate is provided, wherein the chip is a ball grid array (BGA, Ball Grid Array) packaging technology, a chip scale package (CSP, Chip Scale Package) technology, or Flip Chip (Flip Chip, or C4, also known as Controlled Collapse Chip Connection) packaging technology.

Another technical method adopted by the present invention to solve the problems of the prior art is to provide a method for leveling and butting wafers and substrates, which is used to level the substrates warped at the periphery and the wafers warped at the center. The wafer is flatly butted to the substrate, and the leveling and docking method includes the following steps: (A) heating the working base to heat the substrate placed on the working base, and forming a center around the working base and presenting it Annularly distributed suction air flows to form a vacuum suction force, so that the periphery of the substrate is attached to the work base; then, one of the following two steps is performed, whereby the substrate and the wafer are repeatedly deformed After leveling, the bonding surface of the wafer can be flatly connected to the substrate due to heat, (B1) heat is applied to the wafer placed on the substrate, and a suction airflow is formed at the center of the work base. A vacuum suction force is formed, so that the center of the wafer is attached to the center of the substrate due to heat and suction air flow, and deforms as the substrate is recessed downwards. Then, the heat energy applied to the wafer is stopped. A blowing airflow is formed at the center of the work base to form an airflow thrust, which pushes the center of the substrate and the center of the chip to deform upward and reverse; or (B2) apply heat to the chip placed on the substrate, and A blowing airflow is formed at the center of the work base to form an airflow thrust, and the center of the substrate is pushed to protrude upward toward the warped center of the wafer, and then the heat applied to the wafer is stopped, and the work base A suction airflow is formed in the center to form a vacuum suction force, and the center of the substrate and the center of the wafer are pulled downward and reversely deformed.

The following technical effects can be obtained through the technical means adopted by the wafer and substrate leveling and docking equipment and method of the present invention. The substrate and the chip are repeatedly deformed to level the warped shape of the substrate and the chip, and the chip can be flatly connected to the substrate.

Hereinafter, the embodiments of the present invention will be described based on Figures 1 to 11. This description is not intended to limit the implementation of the present invention, but is a kind of embodiment of the present invention.

As shown in Figures 1 and 2, the leveling and docking method M for wafers and substrates according to an embodiment of the present invention is used to warp the peripheral edge of the substrate S, and the center of the reverse warped wafer C It is leveled, so that the wafer C is flatly butted to the substrate S, as shown in FIG. 7. The leveling and docking method M includes the following steps: (A), and one of the following steps, (B1) or (B2).

As shown in Figure 1, Figure 2, and Figure 4, step (A) is to heat the work base B so that the substrate S placed on the work base B is heated and formed on the work base B The suction airflow distributed in a ring shape around the center constitutes a vacuum suction force, so that the peripheral edge of the substrate S is attached to the work base B. In other words, the substrate S is heated and a vacuum suction force is applied, so that the periphery of the substrate S can be smoothly attached to the work base B. It can be seen from the disclosure content of the drawings of the present invention that the work base B can be composed of the heating base 1 and the supporting seat 2. Of course, the present invention is not limited to this, and the work base B can also be a A processing base of a complete block with heating elements.

Next, proceed to either step (B1) or (B2). Thereby, the present invention can make the substrate S and the chip C be flattened by repeated deformation, and the bonding surface of the chip C can be flatly connected to the substrate S due to heat, wherein the chip C can be a ball grid array (BGA, Ball Grid Array) packaging technology, chip scale package (CSP, Chip Scale Package) technology, or flip chip (Flip Chip, or C4, also known as Controlled Collapse Chip Connection) packaging technology.

As shown in Figure 1, Figure 5, and Figure 6, step (B1) is to apply heat to the wafer C placed on the substrate S, and to form a suction airflow at the center of the work base B to A vacuum suction force is formed, so that the center of the chip C is attached to the center of the substrate S due to heat and suction air flow, and deforms as the substrate S is recessed downward. In detail, the chip C is about to be deformed after being heated, and as the strength of the suction air flow increases, the chip C gradually changes from the shape state of "deformed to being attached to the substrate S" to "with the substrate S "Depressed downward deformation" shape state.

Next, in step (B1), as shown in Figure 7, a blowing airflow is formed at the center of the work base B to form an airflow thrust, and the center of the substrate S and the center of the wafer C are pushed upward and reverse Deformed, so that the substrate S and the chip C are restored to a flat state to facilitate the docking of the two. At this time, the present invention has stopped heating the wafer C.

As shown in Figure 1, Figure 8, and Figure 9, the step (B2) is to apply heat to the wafer C placed on the substrate S, and form a blowing airflow at the center of the work base B to form The air force pushes the center of the substrate S to protrude upward toward the warped center of the wafer C. In other words, the substrate S is about to be deformed after being heated, and as the intensity of the blowing air flow increases, the substrate S gradually changes from the original flat shape state to the shape state of "protruding upward toward the chip C".

Next, in step (B2), as shown in Figure 10, a suction airflow is formed at the center of the work base B to form a vacuum suction force, and the center of the substrate S and the center of the wafer C are pulled downward Reverse deformation, so that the substrate S and the chip C are restored to a flat state to facilitate the docking of the two. At this time, the present invention has stopped heating the wafer C.

Furthermore, as shown in FIG. 2, a wafer and substrate leveling and docking device 100 according to an embodiment of the present invention includes: a heating base 1, a supporting base 2, a plurality of airflow sources 3, The heater 4, the plastic support plate 5, and the photomask 6.

As shown in FIG. 2, the heating base 1 has a heating element 11, a first inner through hole 12, and a first surrounding airflow channel 13. The heating element 11 is installed on the heating base 1 so that the temperature of the heating base 1 is heated by the heating element 11 to rise to a predetermined temperature. The first inner through hole 12 is formed at the center of the heating base 1. The first peripheral airflow channel 13 surrounds the outer peripheral portion of the first inner through hole 12. One end of the first inner through hole 12 and one end of the first surrounding airflow channel 13 penetrate to the upper surface of the heating base 1. Of course, the forming method of the first inner through hole 12 and the first peripheral air flow channel 13 is not limited to the above, the first inner through hole 12 and the first peripheral air flow channel 13 may also be formed through the Heating base 1.

As shown in Figure 2, according to an embodiment of the wafer and substrate leveling and docking equipment 100 of the present invention, the heating base 1 is a metal block, and the heating element 11 is embedded in the heating base 1Internal heating element. Thereby, the present invention can control the heating degree of the heating element 11 to increase the temperature of the heating base 1 to a predetermined temperature.

As shown in FIG. 2, the supporting seat 2 is disposed on the upper surface of the heating base 1 to receive the heat conducted by the heating base 1. Furthermore, the present invention receives the heat energy conducted by the heating base 1 by arranging the supporting base 2 on the heating base 1, and thereby controls the heating temperature of the supporting base 2 to the substrate S . Specifically, the supporting base 2 can be a block made of ceramic material, of course, the present invention is not limited to this, and the supporting base 2 can also be a block made of metal material for conducting heat energy.

As shown in FIG. 2, the supporting seat 2 has a second inner through hole 21 and a second surrounding airflow channel 22. The second inner through hole 21 is formed at the center of the receiving seat 2. The second peripheral airflow channel 22 surrounds the outer peripheral portion of the second inner through hole 21. In detail, the second inner through hole 21 and the second surrounding airflow channel 22 are disposed between the lower surface and the upper surface of the supporting seat 2 and penetrate the supporting seat 2.

Furthermore, as shown in Figures 2 and 3, one end of the second inner through hole 21 is connected to the one end of the first inner through hole 12 located on the upper surface of the heating base 1, and Together with the first inner through hole 12, an inner air passage P is formed. The inner air channel P is located at the center of the supporting seat 2 and the heating base 1. In addition, one end of the second surrounding airflow channel 22 is connected to the one end of the first surrounding airflow channel 13 located on the upper surface of the heating base 1, and forms a surrounding with the first surrounding airflow channel 13 Air flow channel Q. The surrounding air passage Q is formed in a circular distribution on the supporting seat 2 and the heating base 1 and surrounds the inner air passage P, wherein the outer contour of the surrounding air passage Q can be round, square... .

Furthermore, as shown in Figures 2 and 3, the supporting seat 2 has a venting groove 23 that is recessed and formed on the upper surface of the supporting seat 2 and communicates with the supporting seat 2 The inner air flow path P at the center.

Of course, the number form of the surrounding airflow channels Q in the present invention is not limited to the above, but may be plural (the drawings of the present invention are not disclosed). For example, the heating base 1 has a plurality of the first surrounding airflow channels 13, and the supporting seat 2 has a plurality of the second surrounding airflow channels 22 to match the plurality of the first surroundings in a one-to-one manner The air flow passage 13 forms a plurality of the surrounding air flow passages Q. In addition, a plurality of the surrounding air passages Q are distributed from the inner air passage P toward the periphery of the heating base 1 and the supporting seat 2 at an interval distance.

As shown in FIG. 2, the plurality of airflow sources 3 correspond in number to the inner airflow channel P and the surrounding airflow channel Q. And, one of the airflow source 31 is connected to the surrounding airflow channel Q, and the other airflow source 32 is connected to the inner airflow channel P, so that the surrounding airflow channel Q and the inner airflow channel P form a blowing airflow or suction Exhaust air.

As shown in FIG. 2, the heater 4 is arranged above the supporting base 2 and is activated to release heat energy toward the supporting base 2. Specifically, the heater 4 may be an infrared light source.

As shown in FIG. 2, the plastic supporting plate 5 has a plurality of perforations 51, and a plurality of the perforations 51 are formed through the plastic supporting plate 5. The plastic supporting plate 5 is installed on the supporting seat 2 to cover the venting groove 23, so that a plurality of the perforations 51 are connected to the inner air flow passage P through the venting groove 23. Thereby, the present invention can provide that the blowing air flow or the suction air flow in the inner air channel P is distributed on the bottom surface of the substrate S at intervals through a plurality of the through holes 51, so as to push or pull the substrate S to be displaced and deformed. In addition, the substrate S abuts against the plastic supporting plate 5 during the displacement and deformation process, and the plastic supporting plate 5 provides the supporting force of the substrate S. Furthermore, the plastic supporting plate 5 can be a heat-resistant rubber or silicone plate-shaped member, of course, the present invention is not limited to this, and the plastic supporting plate 5 can also be a metal plate-shaped member.

As shown in Figure 2, the photomask 6 is disposed above the holder 2 and between the holder 2 and the heater 4, so that the heat energy released by the heater 4 passes through the photomask 6 to reach The wafer C. That is, the infrared light of the heater 4 passes through the light-transmitting part of the photomask 6 to apply heat to the chip C.

As shown in Figure 2, the peripheral edge of the substrate S placed on the supporting base 2 is warped away from the supporting base 2, and the bonded chip C is warped away from the outer periphery of the bonding surface at the center of the bonding surface relative to the outer periphery of the bonding surface. The substrate S, wherein the substrate S is in contact with the plastic support plate 5. As shown in Figure 4, first, the substrate S is heated by the holder 2 through the plastic support plate 5, and one of the airflow sources 31 drives the surrounding airflow channel Q to form a suction airflow to form a vacuum suction force. The periphery of the substrate S is attached to the supporting seat 2 due to heating and suction air flow. Next, perform one of the following two steps; thereby, the substrate S and the wafer C are repeatedly deformed to be flattened, and the bonding surface of the wafer C is heated by the heater 4 to be flatly butted to The substrate S.

As shown in FIGS. 5 and 6, (1) the heater 4 releases heat energy toward the wafer C, and the other air flow source 32 drives the inner air flow path P to form a suction air flow, so that the center of the wafer C Due to the heating by the heater 4 and the action of the suction air flow, the part is attached to the center of the substrate S and deforms as the substrate S is recessed toward the supporting seat 2. Then, as shown in FIG. 7, the heater 4 is turned off, and the other air flow source 32 drives the inner air flow channel to form a blowing air flow to form an air flow thrust to push the center of the substrate S and the center of the wafer C It deforms in the opposite direction toward the heater 4. In this way, the present invention can level the substrate S and the chip C and connect the chip C to the substrate S.

Or, as shown in FIGS. 8 and 9, (2) the heater 4 releases heat energy toward the wafer C, and the other airflow source 32 drives the inner airflow channel P to form a blowing airflow to form an airflow thrust, and push The center of the substrate S protrudes and deforms toward the warped center of the wafer C. Then, as shown in FIG. 10, the heater 4 is turned off, and the other air flow source 32 drives the inner air flow path P to form a suction air flow to form a vacuum suction force, and pulls the center of the substrate S and the wafer C The center is deformed in the opposite direction toward the supporting seat 2.

As shown in Figure 11, the difference between the leveling and docking device 100A for wafers and substrates and the leveling and docking device 100 for wafers and substrates according to another embodiment of the present invention is that the leveling and docking devices 100A do not have the Plastic support plate 5, and the substrate S is placed on the receiving seat 2A without contacting the plastic support plate 5. That is to say, the substrate S is directly placed on the top surface of the supporting seat 2A to cover the ventilation groove 23A, so that the suction or blowing airflow formed by the inner air channel P is directly applied through the ventilation groove 23A Give the substrate S.

It can be seen from the above that the leveling and docking method M of the wafer and the substrate of the present invention, as shown in Figures 4 to 7, is applied to the substrate S and the wafer C in order by heating the substrate S and the wafer C in conjunction with the suction air flow. At the periphery and the center of the substrate S, and the blowing airflow is applied to the center of the substrate S (or, for the center of the substrate S, the blowing airflow is applied first, and then the suction airflow is applied, as shown in Figures 8 to 10. Figure), so that the substrate S and the wafer C are repeatedly deformed to be flattened, and the wafer C can be flatly connected to the substrate S.

It can be seen from the above that the wafer and substrate leveling and docking equipment 100 of the present invention adjusts the heat applied to the substrate S through the heating base 1 and the supporting seat 2, and uses the heater 4 and the The photomask 6 controls the heating of the wafer C, and cooperates with the inner airflow channel P, the surrounding airflow channel Q, and a plurality of airflow sources 31, 32 to apply a vacuum suction force of suction airflow to the substrate S and the wafer C , And the airflow thrust of the blowing airflow, wherein the periphery and the center of the substrate S are subjected to vacuum suction in sequence, and then the center of the substrate S is subjected to the airflow thrust (or, the center of the substrate S is subjected to the airflow Thrust and then bear the vacuum suction). Thereby, the substrate S and the wafer C are repeatedly deformed to be flattened, and the bonding surface of the wafer C is heated by the heater 4 so as to be flatly connected to the substrate S.

The above descriptions and descriptions are only descriptions of the preferred embodiments of the present invention. Those with general knowledge of this technology should make other modifications based on the scope of patent applications defined below and the above descriptions, but these modifications should still be made. It is the spirit of the present invention and falls within the scope of the rights of the present invention.

100: Leveling and docking equipment for wafers and substrates 100A: Leveling and docking equipment for wafers and substrates 1: heating base 11: Heating element 12: The first inner through hole 13: The first surrounding airflow channel 2: bearing seat 21: The second inner through hole 22: Second surrounding airflow channel 23: Aeration trough 23A: Breathing trough 2A: Socket 3: Airflow source 31: Airflow source 31: Airflow source 4: heater 5: Plastic support plate 51: Piercing 6: Mask A: Step B: Work abutment B1: Step B2: steps C: chip P: Inside air duct M: Leveling and docking method of chip and substrate Q: Surrounding air channel S: substrate

[Figure 1] is a schematic flow chart showing a method for leveling and docking a wafer and a substrate according to an embodiment of the present invention; [Figure 2] is a schematic cross-sectional side view showing a leveling and docking device for wafers and substrates according to an embodiment of the present invention; [Figure 3] is a schematic top view showing the working base of the wafer and substrate leveling and docking equipment according to an embodiment of the present invention; [Figure 4] is a schematic cross-sectional side view showing that the wafer and substrate leveling and docking equipment according to an embodiment of the present invention heats the substrate and applies vacuum suction to the periphery of the substrate; [Figure 5] is a schematic cross-sectional side view showing that the wafer and substrate leveling and docking equipment according to an embodiment of the present invention heats the substrate and the wafer, and applies vacuum suction to the periphery and center of the substrate; [Figure 6] is a schematic cross-sectional side view showing that the wafer and substrate leveling and docking equipment according to an embodiment of the present invention deforms the substrate and the wafer downwardly; [Figure 7] is a schematic cross-sectional side view showing the leveling and docking device for wafers and substrates according to an embodiment of the present invention applying air thrust to the center of the substrate and vacuum suction to the periphery of the substrate; [Figure 8] is a schematic cross-sectional side view showing that the wafer and substrate leveling and docking equipment according to an embodiment of the present invention heats the wafer, applies air thrust to the center of the substrate, and applies vacuum suction to the periphery of the substrate; [Figure 9] is a schematic cross-sectional side view showing the upward deformation of the substrate and the wafer by the leveling and docking equipment for the wafer and the substrate according to the embodiment of the present invention; [Figure 10] is a schematic cross-sectional side view showing that the wafer and substrate leveling and docking equipment according to an embodiment of the present invention heats the wafer, applies vacuum suction to the center of the substrate, and applies vacuum suction to the periphery of the substrate; as well as [Figure 11] is a schematic cross-sectional side view showing a leveling and docking device for wafers and substrates according to another embodiment of the present invention.

M: Leveling and docking method of chip and substrate

A: Step

B1: Step

B2: steps

Claims (9)

A leveling and docking device for wafers and substrates includes: a heating base with a heating element, a first inner through hole, and a first surrounding airflow channel; the heating element is installed on the heating base to make the temperature of the heating base It is heated by the heating element to rise to a predetermined temperature, the first surrounding airflow channel is surrounding the outer periphery of the first inner through hole, one end of the first inner through hole penetrates to the upper surface of the heating base, and the One end of a surrounding airflow channel penetrates to the upper surface of the heating base; the supporting seat is arranged on the upper surface of the heating base to receive the heat conducted by the heating base, and the supporting seat has a second inner side through A hole, and a second surrounding airflow channel, the second inner through hole and the second surrounding airflow channel are disposed between the lower surface and the upper surface of the bearing seat and penetrate the bearing seat, the second inner through hole One end of the first inner through hole is connected to the one end of the first inner through hole located on the upper surface of the heating base to form an inner air channel together with the first inner through hole, and the inner air channel is located in the supporting seat , And at the center of the heating base, one end of the second surrounding airflow channel communicates with the one end of the first surrounding airflow channel located on the upper surface of the heating base and is shared with the first surrounding airflow channel A surrounding airflow channel is formed, the surrounding airflow channel is formed in a circular distribution on the supporting seat and the heating base and surrounding the inner airflow channel, the inner airflow channel and the surrounding airflow channel are in the supporting seat and The heating base is independent of each other without being connected to each other and connected to their respective airflow sources; a plurality of the airflow sources corresponds in number to the inner airflow channel and the surrounding airflow channel, and one of the airflow sources is connected to The surrounding airflow channel and the other airflow source are connected to the inner airflow channel, so that blowing airflow or suction airflow is formed in the surrounding airflow channel and the inner airflow channel; and a heater is arranged above the supporting seat and It is activated to release heat energy towards the bearing seat, Wherein, when the peripheral edge of the substrate placed on the supporting seat is warped away from the supporting seat, and the bonded chip is warped away from the substrate at the center of the bonding surface relative to the outer periphery of the bonding surface, first by the supporting The seat heats the substrate and one of the airflow sources drives the surrounding airflow channel to form a suction airflow to form a vacuum suction force. Due to the heating and suction airflow, the periphery of the substrate is attached to the holder, and then proceed One of the following two steps, whereby the substrate and the wafer are repeatedly deformed and flattened, and the bonding surface of the wafer is flatly connected to the substrate due to heating by the heater, (1) The heater releases heat energy toward the wafer, and another airflow source drives the inner airflow channel to form a suction airflow, so that the center of the wafer is attached to the substrate due to the heating by the heater and the suction airflow Then, the heater is turned off, and another air source drives the inner air flow channel to form a blowing air flow to form an air flow thrust, which pushes the center of the substrate and The center of the wafer deforms in the opposite direction toward the heater, or (2) the heater releases heat energy toward the wafer, and another airflow source drives the inner airflow channel to form a blowing airflow to form an airflow thrust to push the substrate The center of the wafer protrudes and deforms toward the warped center of the wafer. Then, the heater is turned off, and another air flow source drives the inner air flow channel to form a suction air flow to form a vacuum suction force, and draws the center of the substrate and The center of the chip deforms in the opposite direction toward the supporting seat. The leveling and docking device for wafers and substrates according to claim 1, further comprising a plastic support plate, the plastic support plate has a plurality of perforations, and a plurality of the perforations are formed through the plastic support plate, wherein the bearing seat has The vent groove is recessed and formed on the upper surface of the bearing seat and communicates with the inner air flow channel located at the center of the bearing seat, the plastic support plate is installed on the bearing seat to cover the vent groove, and A plurality of the perforations are connected to the inner air passage through the ventilation groove, so that the blowing air or suction air flow in the inner air passage can push or pull the substrate position through the plurality of perforations During the displacement and deformation process, the substrate abuts against the plastic supporting plate, and the plastic supporting plate provides the supporting force of the substrate. The leveling and docking equipment for wafers and substrates according to claim 1, further comprising a photomask, the photomask is arranged above the holder and between the holder and the heater, so that the heater is released The heat energy passes through the mask to the chip. The chip and substrate leveling and docking device according to claim 1, wherein the heating base has a plurality of the first surrounding airflow channels, and the supporting seat has a plurality of the second surrounding airflow channels, and the heating base has a plurality of the second surrounding airflow channels. A plurality of the first surrounding air flow channels form a plurality of the surrounding air flow channels, and the plurality of the surrounding air flow channels are distributed at an interval from the inner air channel toward the heating base and the periphery of the supporting seat . The chip and substrate leveling and docking equipment according to claim 1, wherein the supporting seat is a block made of ceramic material. The wafer and substrate leveling and docking equipment according to claim 1, wherein the heater is an infrared light source, and the infrared light of the heater passes through a mask to apply heat to the wafer. The chip and substrate leveling and docking equipment according to claim 1, wherein the heating base is a block made of metal material, and the heating element is an electric heating element embedded in the heating base. The chip and substrate leveling and docking equipment according to claim 1, wherein the chip is a ball grid array packaging technology, a chip size packaging technology, or a flip chip packaging technology. A method for leveling and docking wafers and substrates is used to level the substrates warped at the periphery and the wafers warped at the center so that the wafers are evenly docked to the substrate. The leveling and docking method includes the following steps: (A) The work base is heated to heat the substrate placed on the work base, and a suction airflow that surrounds the center and is distributed in a ring shape is formed on the work base to form a vacuum suction force to make the periphery of the substrate Attach to the work base; then, perform one of the following two steps, whereby the substrate and the wafer are repeatedly deformed and flattened, and the bonding surface of the wafer can be flatly butted to The substrate, (B1) applies heat energy to the wafer placed on the substrate, and forms a suction airflow at the center of the work base to form a vacuum suction force, so that the center of the wafer is heated and sucked airflow It is attached to the center of the substrate and deforms as the substrate sags downward. Then, the thermal energy applied to the wafer is stopped, and a blowing airflow is formed at the center of the work base to form an airflow thrust to push the substrate Or (B2) apply heat to the wafer placed on the substrate and form a blowing airflow at the center of the work base to form an airflow thrust to push the wafer The center of the substrate protrudes upward toward the warped center of the wafer. Then, the heat applied to the wafer is stopped, and a suction airflow is formed at the center of the work base to form a vacuum suction force to pull the center of the substrate. And the center of the wafer is deformed downward and reverse.

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