CN111128819B - Micro-device transfer device and preparation method thereof - Google Patents
Micro-device transfer device and preparation method thereof Download PDFInfo
- Publication number
- CN111128819B CN111128819B CN201811290469.8A CN201811290469A CN111128819B CN 111128819 B CN111128819 B CN 111128819B CN 201811290469 A CN201811290469 A CN 201811290469A CN 111128819 B CN111128819 B CN 111128819B
- Authority
- CN
- China
- Prior art keywords
- hole
- vacuum
- adsorption head
- holes
- elastic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/0404—Pick-and-place heads or apparatus, e.g. with jaws
- H05K13/0408—Incorporating a pick-up tool
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Micromachines (AREA)
Abstract
The application discloses a micro-device transfer device and a preparation method thereof, wherein the micro-device transfer device comprises: an elastic adsorption head having a plurality of first through holes; a support plate having a plurality of second through holes; wherein, the backup pad sets up in elasticity absorption head one side, and every second through-hole intercommunication at least one first through-hole, second through-hole intercommunication vacuum device, first through-hole intercommunication external world to treat the transfer microdevice through first through-hole vacuum absorption. Through the mode, the problem that the traditional patch suction head is difficult to adsorb Micro-LED devices can be solved.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a micro-device transfer device and a preparation method thereof.
Background
In Micro-LED (Micro light emitting diode) display panel processing, the batch transfer technology can realize efficient transfer of a large batch of Micro-LED device arrays from LED chips to a driving backboard, can greatly improve the utilization efficiency of the LED chips so as to reduce the panel processing cost, enables the panel price to reach the acceptable degree of users, and simultaneously meets the repairable requirement of damaged pixels on the panel. However, due to the small size, complex surface structure and the presence of the undulations of the Micro-LED device, it is difficult to use a conventional chip suction head to suck the Micro-LED device.
Disclosure of Invention
The application provides a Micro device transfer device and a preparation method thereof, which can solve the problem that a traditional patch suction head is difficult to adsorb a Micro-LED device.
In order to solve the technical problems, the application adopts a technical scheme that: provided is a micro device transfer apparatus including: an elastic adsorption head having a plurality of first through holes; a support plate having a plurality of second through holes; wherein, the backup pad sets up in elasticity absorption head one side, and every second through-hole intercommunication at least one first through-hole, second through-hole intercommunication vacuum device, first through-hole intercommunication external world to treat the transfer microdevice through first through-hole vacuum absorption.
In order to solve the technical problems, the application adopts another technical scheme that: provided is a method for manufacturing a micro device transfer apparatus, comprising: providing an elastic adsorption head with a plurality of first through holes; providing a support plate having a plurality of second through holes; and fixedly connecting the elastic adsorption head with the support plate, wherein each second through hole in the support plate at least corresponds to the first through hole of one elastic adsorption head.
The beneficial effects of the application are as follows: in contrast to the prior art, the micro device transfer device of the present application includes an elastic adsorption head having a plurality of first through holes, and a support plate having a plurality of second through holes, wherein the support plate is disposed on one side of the elastic adsorption head, each second through hole is connected to at least one first through hole, the second through holes are connected to a vacuum device, and the first through holes are connected to the outside, so that the micro device to be transferred can be vacuum adsorbed through the first through holes. In the mode, the micro device transfer device can adsorb a plurality of micro devices to be transferred simultaneously by arranging the elastic adsorption head with the plurality of first through holes, and can adsorb micro devices with different sizes and different surface structures due to the elasticity of the adsorption head; meanwhile, the supporting plate can also support the elastic adsorption head, so that the smoothness of the adsorption head is kept, and the phenomenon that the elastic adsorption head cannot correspond to a micro device to be absorbed due to elastic deformation of the elastic adsorption head caused by vacuum action is avoided.
Drawings
FIG. 1 is a schematic view of a first embodiment of a micro device transfer apparatus of the present application;
FIG. 2 is a schematic diagram of a second embodiment of a micro device transfer apparatus of the present application;
FIG. 3 is a schematic illustration of a process for transferring a micro device using the micro device transfer apparatus shown in FIG. 2;
FIG. 4 is a schematic flow chart of a first embodiment of a method of manufacturing a micro device transfer apparatus of the present application;
FIG. 5 is a schematic diagram showing a specific flow of step S11 in FIG. 4;
FIG. 6 is a schematic view of a process for forming an elastic suction head using the steps of FIG. 5;
fig. 7 is a schematic diagram of a specific flow of step S12 and step S13 in fig. 4;
FIG. 8 is a schematic illustration of a process for forming a micro device transfer apparatus using the steps of FIG. 7;
fig. 9 is a schematic view of a process of forming a vacuum device including a vacuum chamber and a vacuum apparatus connected to the vacuum chamber using step S14 of fig. 4;
fig. 10 is a schematic view of a process of forming a vacuum device including a vacuum pipe communicating with each second through hole and a vacuum apparatus connected to the vacuum pipe using step S14 of fig. 4.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
As shown in fig. 1, in a first embodiment of the micro device transfer apparatus 10 of the present application, the micro device transfer apparatus includes: an elastic adsorption head 101 having a plurality of first through holes 1011; the support plate 102 has a plurality of second through holes 1021.
The elastic adsorption head 101 may be made of an elastic rubber material such as PDMS (Polydimethylsiloxane). The inventor finds that, as the PDMS material has elasticity, the PDMS material can be better attached to the micro device by utilizing the deformation space when the micro device with an irregular surface is adsorbed, so that the tightness between the elastic adsorption head 101 and the micro device is improved, and the adsorption effect is enhanced; and the PDMS material can be processed into holes with the size of a micron, which is particularly beneficial to adsorbing Micro devices such as Micro-LEDs. Of course, other rubber materials with a modulus of elasticity similar to PDMS, such as molded silicone (Moldable Silicone, MS), may be used for the elastic adsorption head 101. Wherein the elastic modulus of the elastic adsorption head 101 ranges from 0.1 MPa to 10MPa.
The elastic adsorption head 101 has a plurality of first through holes 1011, wherein the spacing between the first through holes 1011 can be set according to the spacing between the micro devices actually required to be adsorbed, and the difference therebetween cannot be greater than the allowable range (for example, cannot be greater than 10 μm). Preferably, the two are kept in agreement, which may be more advantageous in achieving accurate adsorption of the microdevices.
The diameter of the first via 1011 is in the micrometer scale, preferably 1-100 micrometers. The inventors have found that the pore size range of 1-100 microns is within the process range of processing vias and that this pore size range is particularly suitable for adsorbing current Micro devices such as Micro-LEDs.
The support plate 102 is provided on one side of the elastic adsorption head 101, and the support plate 102 is a hard plate, which may be a glass plate or a monocrystalline silicon plate. Preferably, the elastic adsorption head 101 is connected with the support plate 102 by an ionic bonding. The inventor finds that, as the PDMS material has good adhesion with the silicon wafer, the PDMS material is used as the elastic adsorption head 101, and the glass wafer or the monocrystalline silicon wafer is used as the support plate 102, the elastic adsorption head 101 and the support plate 102 can be easily connected by means of silicon-oxygen bonding connection, and the support plate 102 can have a better supporting effect on the elastic adsorption head 101, so that the flatness of the elastic adsorption head 101 is ensured, the elastic adsorption head 101 cannot be elastically deformed too much under vacuum, is not easy to deform, and further can maintain the corresponding position with a micro device to be absorbed, and the positioning pick-up effect is improved.
The supporting plate 102 has a plurality of second through holes 1021, each second through hole 1021 is at least communicated with one first through hole 1011, the second through hole 1021 is communicated with the vacuum device 103, and the first through hole 1011 is communicated with the outside to vacuum adsorb the micro device to be transferred through the first through hole 1011. For example, in fig. 1, each of the second through holes 1021 communicates with two of the first through holes 1011.
The aperture range of the second through hole 1021 is preferably larger than the aperture range of the first through hole 1011, and at this time, the air flow generated by the vacuum device 103 does not generate obstruction when passing through the second through hole 1021 and the first through hole 1011, which is more beneficial to the circulation of air and the smoothness of the process of adsorbing and releasing the micro device.
The vacuum device 103 may include a vacuum chamber 1031 and a vacuum apparatus 1032 coupled to the vacuum chamber. The vacuum device 1032 may be a vacuum pump, the vacuum chamber 1031 is used for connecting the support plate 102, and the other side of the support plate 102 far from the elastic adsorption head 101 may be attached to the vacuum chamber 1031, so that the vacuum chamber 1031 is communicated with the outside through the second through hole 1021 and the first through hole 1011, and then the vacuum device 1032 may be used for vacuumizing to generate negative pressure at the first through hole 1011, and the outside micro device may be adsorbed through the first through hole 1011. In other embodiments, the vacuum device 103 may also include a vacuum pipe and a vacuum apparatus communicating with each of the second through holes 1021, so that negative pressure may be directly generated to the passage between the second through holes 1021 and the first through holes 1011 through the vacuum pipe to adsorb the micro device.
Of course, in other embodiments, each second through hole may also be in one-to-one communication with one first through hole.
As shown in fig. 2, in a second embodiment of the micro device transfer apparatus of the present application, the micro device transfer apparatus 20 has a similar structure to the micro device transfer apparatus 10, and the difference is that each second through hole 1022 is in one-to-one correspondence with one first through hole 1011 in the support plate 102 of the micro device transfer apparatus 20. The inventor finds that, because the aperture range of the first through holes 1011 is in the micron level, the first through holes 1011 and the second through holes 1022 are correspondingly communicated one by one, which is beneficial to controlling the adsorption force of each first through hole 1011 and is more beneficial to adsorbing micro devices.
The second through hole 1022 may have the same or different aperture shape as the first through hole, and may be configured according to an actual hole forming process. Preferably, the aperture of the second through hole 1022 increases gradually from the side adjacent to the elastic adsorption head 101 to the side far away from the elastic adsorption head 101, which conforms to the aperture shape generated by the conventional process (such as etching process), and meanwhile, the air flow generated by the vacuum device 103 can flow through the second through hole 1022 more easily, so that the air flow is less obstructed when passing through the second through hole 1022 and the first through hole 1011, which is more beneficial to the circulation of the air, and is more beneficial to the smoothness of the process of adsorbing and releasing the micro device.
Specifically, as shown in fig. 2 and 3, taking the Micro device transferring apparatus 20 of the present embodiment as an example, when transferring Micro devices (such as Micro-LEDs) in batch, first, it is required to control the Micro device transferring apparatus 20 to contact the Micro device a to be transferred at a corresponding position on the donor substrate 21 (such as a Micro-LED chip growth substrate), that is, to align the first through hole 1011 on the elastic adsorption head 101 with the Micro device a to be transferred. Then, the vacuum device 103 is controlled to generate negative pressure, for example, a vacuum pump pumps vacuum along the arrow direction in fig. 3 (a), so that the external atmospheric pressure is greater than the atmospheric pressure in the first through hole 1011, thereby generating negative pressure, the micro-device a to be transferred is adsorbed at the corresponding first through hole 1011, and because the elastic adsorption head 101 is an elastic material, the elastic material around the first through hole 1011 can be deformed, so that the micro-device a to be transferred is attached to the surface of the elastic adsorption head 1011 (as shown in fig. 3 (b)), the tightness between the elastic adsorption head 101 and the micro-device a to be transferred is improved, and the vacuum adsorption is more facilitated. Thereafter, as shown in fig. 3 (c), the micro device transfer apparatus 20 is moved, and the micro device a to be transferred may be moved onto the receiving substrate 22 (e.g., a display panel or a driving back plate), and then aligned with the placement position on the receiving substrate 22. Finally, as shown in fig. 3 (d), the vacuum device 103 is controlled to break the vacuum, for example, a vacuum pump is used to blow air in the arrow direction in fig. 3 (d), so that the air pressure in the first through hole 1011 is greater than or equal to the external atmospheric pressure, and thus the micro device a to be transferred can be released from the elastic transfer head 101, and further the micro device a to be transferred is placed at the corresponding placement position of the receiving substrate 22, and finally batch transfer of the micro device a to be transferred is achieved.
As shown in fig. 4, a first embodiment of a method for manufacturing a micro device transfer apparatus of the present application includes:
s11: an elastic suction head having a plurality of first through holes is provided.
The elastic adsorption head may be made of an elastic rubber material such as PDMS (Polydimethylsiloxane). Of course, other rubber materials with a modulus of elasticity similar to PDMS, such as molded silicone (MoldableSilicone, MS), may be used for the elastic adsorption head.
The distance between the first through holes can be set according to the distance between micro devices which are adsorbed according to actual needs, and the first through holes and the second through holes can be consistent. The diameter of the first through hole is in the order of micrometers, preferably 1-100 micrometers.
Specifically, the elastic adsorption head can be formed by filling a PDMS material after a micron-sized photoetching column is generated on a substrate, and a plurality of micron-sized first through holes can be directly etched on a PDMS film layer on the substrate through photoetching and other processes.
Alternatively, as shown in fig. 5 and 6, step S11 may include:
s111: a substrate is provided, and a plurality of photoresist columns are formed on the substrate by photoetching.
Wherein the substrate is a hard substrate, such as a glass substrate, and can support the elastic adsorption head. The photoresist column can be formed by coating a photoresist layer on a substrate, and then utilizing a photoetching process, including exposing, developing and the like, to leave a column-shaped photoresist. The photoresist pillars have a diameter in the range of micrometers, preferably 1 to 100 micrometers, for example 5 micrometers, 10 micrometers, 20 micrometers, 50 micrometers or 80 micrometers.
S112: and bonding a hard plate with the top of the photoresist column in a pressing and heating mode.
The hard plate may be a glass substrate, a single crystal silicon plate, or the like. The top of the photoresist column refers to the top surface of one side of the photoresist column far away from the substrate, and the hard plate and the top of the photoresist column can be bonded by using a pressing heating mode.
S113: an elastic material is filled between the base plate and the hard plate.
S114: the hard plate is removed and the photoresist column is removed to form an elastic adsorption head.
Specifically, in one application, the elastic material is PDMS material, and a hollow structure is formed between the substrate and the hard plate, the hollow structure being supported by a plurality of photoresist pillars. When the PDMS prepolymer (namely liquid PDMS material) is dripped at the opening of the hollow structure between the substrate and the hard plate, the hollow structure can be filled with PDMS through capillary action, and then the PDMS can be crosslinked by heating, so that the PDMS material is hardened. Then, the hard plate is removed, for example, the hard glass plate can be removed by mechanical stripping or chemical etching, and finally, after the photoresist column is dissolved, the elastic adsorption head with a plurality of first through holes can be obtained on the substrate.
S12: a support plate having a plurality of second through holes is provided.
The support plate is a rigid plate, which may be a glass sheet or a monocrystalline silicon sheet. The supporting plate can be etched on the hard plate to form the second through hole, and the aperture range of the second through hole is preferably larger than that of the first through hole so as to facilitate the air flow to pass through and enhance the adsorption effect of the micro device.
Alternatively, as shown in fig. 7 and 8, step S12 includes:
s120: a carrier substrate is provided, and a photoresist pattern is formed on the carrier substrate by photoetching.
Wherein the bearing substrate is a hard plate for forming the supporting plate, and a glass plate or a monocrystalline silicon wafer can be used. An opening is formed between two adjacent photoresist patterns, and the aperture of the opening is preferably larger than or equal to that of the first through hole, so that the aperture of the second through hole formed at the position of the opening is not smaller than that of the first through hole, thereby facilitating gas circulation.
S121: and pouring etching liquid into the bearing substrate from the opening of the photoresist pattern to carry out wet etching on the bearing substrate so as to form a second through hole at the position corresponding to the opening, thereby forming a supporting plate.
The aperture shape of the second through hole may be the same as or different from that of the first through hole, and may be set according to an actual hole opening process. Preferably, the aperture of the second through hole gradually increases from the side adjacent to the elastic adsorption head to the side far away from the elastic adsorption head.
Specifically, a photoresist layer is coated on a surface of a hard carrier substrate, and then the photoresist layer is subjected to photoetching to form a photoresist pattern with a plurality of openings, wherein the aperture range of the openings can be in a micron level. Then, pouring etching liquid into the bearing substrate from the opening of the photoresist pattern, and etching the bearing substrate at the opening by using the etching liquid, so that the second through hole can be formed by carrying out wet etching on the bearing substrate at the position corresponding to the opening.
S13: and fixedly connecting the elastic adsorption head with the support plate, wherein each second through hole in the support plate at least corresponds to the first through hole of one elastic adsorption head.
Each second through hole can be communicated with two or more first through holes, and can also be communicated with one first through hole in a one-to-one correspondence manner.
Specifically, after the elastic adsorption head and the support plate are formed in steps S11 and S12, the contact surface between the elastic adsorption head and the support plate may be chemically treated, so that the elastic adsorption head and the support plate may be fixedly connected, and at the same time, alignment may be performed during connection, so that each second through hole in the support plate corresponds to at least a first through hole of one elastic adsorption head, so as to facilitate adsorption of the micro device through an air flow channel formed between the first through hole and the second through hole.
Alternatively, as shown in fig. 7, step S13 includes:
s131: the supporting plate and the elastic adsorption head are connected through silicon-oxygen bonding after oxygen plasma treatment.
Specifically, as the supporting plate adopts a silicon wafer such as a glass substrate, the elastic adsorption head adopts a PDMS material, and the PDMS material has good adhesion with the silicon wafer, and after oxygen plasma treatment is carried out on the supporting plate and the elastic adsorption head, the supporting plate and the elastic adsorption head can be connected through silicon-oxygen bonding.
Further, as shown in fig. 7 and 8, after step S131, the method further includes:
s132: the photoresist pattern is dissolved.
Specifically, after the support plate having the photoresist pattern is bonded to the side of the elastic suction head using step S131, the photoresist pattern may be dissolved to finally form the support plate on the surface of the elastic suction head.
In other embodiments, the step S123 may be performed before the step S131.
Optionally, as shown in fig. 7 and 8, after step S132, the method further includes:
s133: and removing the substrate at one side of the elastic adsorption head.
Specifically, the substrate may be removed from the elastic suction head by mechanical stripping or chemical etching, to finally form the micro device transfer apparatus.
Optionally, as shown in fig. 4, after step S13, the method may further include:
s14: and a vacuum device is connected to one side of the supporting plate far away from the elastic adsorption head.
Specifically, in one application example, as shown in fig. 9, the vacuum device includes a vacuum chamber and a vacuum apparatus connected to the vacuum chamber. The vacuum device can be a vacuum pump, the vacuum chamber is used for being connected with the supporting plate, the other side, far away from the elastic adsorption head, of the supporting plate can be attached to the vacuum chamber, the vacuum chamber is communicated with the outside through the second through hole and the first through hole, and then the vacuum device can be used for vacuumizing, so that negative pressure is generated at the first through hole, and an outside micro device can be adsorbed through the first through hole.
In another application example, as shown in fig. 10, the vacuum device includes a vacuum pipe communicating with each of the second through holes and a vacuum apparatus connected to the vacuum pipe, so that a negative pressure can be directly generated to a passage between the second through holes and the first through holes through the vacuum pipe to adsorb the micro device. Wherein, each vacuum pipeline can be provided with a switch valve (not shown), and the switch valve can control the on-off of the vacuum pipeline, so that the corresponding micro device can be selectively transferred.
In this embodiment, an elastic adsorption head with a plurality of first through holes is formed on a substrate, a support plate is formed on one side of the elastic adsorption head away from the substrate, the support plate is provided with a plurality of second through holes, each second through hole is at least communicated with one first through hole, then the substrate is removed, and finally a micro device transfer device is formed, and the micro device transfer device can adsorb a plurality of micro devices to be transferred simultaneously by arranging the elastic adsorption head with the plurality of first through holes, and can adsorb micro devices with different sizes and different surface structures due to the elasticity of the adsorption head; meanwhile, the supporting plate can also support the elastic adsorption head, so that the smoothness of the adsorption head is kept, and the phenomenon that the elastic adsorption head cannot correspond to a micro device to be absorbed due to elastic deformation of the elastic adsorption head caused by vacuum action is avoided.
The foregoing description is only of embodiments of the present application, and is not intended to limit the scope of the application, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present application or directly or indirectly applied to other related technical fields are included in the scope of the present application.
Claims (5)
1. A micro device transfer apparatus, comprising:
the elastic adsorption head is provided with a plurality of first through holes, and the elastic adsorption head is made of polydimethylsiloxane;
the support plate is provided with a plurality of second through holes and is a monocrystalline silicon piece or a glass piece;
the elastic adsorption head is connected with the supporting plate in an ionic bonding way; each independent second through hole is communicated with one first through hole in a one-to-one correspondence manner, the second through holes are communicated with a vacuum device, and the first through holes are communicated with the outside so as to vacuum adsorb the micro device to be transferred through the first through holes;
the vacuum device comprises a vacuum chamber and a vacuum device connected with the vacuum chamber, wherein the vacuum device is used for generating vacuum, the vacuum chamber is used for connecting the supporting plate, and the other side, far away from the elastic adsorption head, of the supporting plate is attached to the vacuum chamber; or;
the vacuum device comprises a vacuum pipeline communicated with each second through hole and a vacuum device connected with the vacuum pipeline, so that negative pressure can be directly generated to a channel between the second through hole and the first through hole through the vacuum pipeline to adsorb the micro device; each vacuum pipeline is provided with a switch valve, and the switch valve can control the on-off of the vacuum pipeline, so that the corresponding micro device can be selectively transferred.
2. The micro device transfer apparatus of claim 1, wherein the aperture of the second through hole gradually increases from a side adjacent to the elastic suction head to a side distant from the elastic suction head.
3. The micro device transfer apparatus of claim 1, wherein,
the diameter of the first through hole is in the range of 1-100 micrometers.
4. A method of making a microdevice transfer device comprising:
providing an elastic adsorption head with a plurality of first through holes, wherein the elastic adsorption head is made of polydimethylsiloxane;
providing a support plate with a plurality of second through holes, wherein the support plate is a monocrystalline silicon piece or a glass piece;
fixedly connecting the elastic adsorption heads with the support plates, wherein each independent second through hole in the support plate corresponds to a first through hole of one elastic adsorption head one by one;
wherein the step of providing the elastic adsorption head with a plurality of first through holes comprises:
providing a substrate, and photoetching a plurality of photoresist columns on the substrate;
bonding a hard plate with the top of the photoresist column in a pressing and heating mode;
filling an elastic material between the base plate and the hard plate;
removing the hard plate and removing the photoresist column to form the elastic adsorption head;
wherein, the step of fixedly connecting the elastic adsorption head and the supporting plate comprises:
and after oxygen plasma treatment is carried out on the supporting plate and the elastic adsorption head, the supporting plate and the elastic adsorption head are connected through silicon-oxygen bonding.
5. The method of manufacturing according to claim 4, wherein the step of providing the support plate having the plurality of second through holes comprises:
providing a bearing substrate, and photoetching a photoresist pattern on the bearing substrate;
and pouring etching liquid into the bearing substrate from the opening of the photoresist pattern to perform wet etching on the bearing substrate so as to form the second through hole at the position corresponding to the opening and form the supporting plate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811290469.8A CN111128819B (en) | 2018-10-31 | 2018-10-31 | Micro-device transfer device and preparation method thereof |
| PCT/CN2019/104763 WO2020088099A1 (en) | 2018-10-31 | 2019-09-06 | Micro device transferring device and preparation method therefor |
| KR1020217016369A KR20210092225A (en) | 2018-10-31 | 2019-09-06 | Micro device transfer device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811290469.8A CN111128819B (en) | 2018-10-31 | 2018-10-31 | Micro-device transfer device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111128819A CN111128819A (en) | 2020-05-08 |
| CN111128819B true CN111128819B (en) | 2023-09-29 |
Family
ID=70464595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811290469.8A Active CN111128819B (en) | 2018-10-31 | 2018-10-31 | Micro-device transfer device and preparation method thereof |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20210092225A (en) |
| CN (1) | CN111128819B (en) |
| WO (1) | WO2020088099A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111856883A (en) * | 2020-06-29 | 2020-10-30 | 南京中电熊猫液晶显示科技有限公司 | Micro device transfer head and manufacturing method thereof |
| CN112967981B (en) * | 2020-08-31 | 2022-05-13 | 重庆康佳光电技术研究院有限公司 | Chip transfer head and manufacturing method thereof, die bonder and chip transfer method |
| KR102638010B1 (en) * | 2021-10-21 | 2024-02-20 | 엔젯 주식회사 | Pick-and-place apparatus of micro led chip for chip-repairing of micro led display |
| WO2023087144A1 (en) * | 2021-11-16 | 2023-05-25 | 重庆康佳光电技术研究院有限公司 | Led chip assembly and preparation method therefor, and preparation method for display panel |
| KR20240000895A (en) | 2022-06-24 | 2024-01-03 | 한국기계연구원 | Transfer film for micro device, apparatus and method for transferring micro device using the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068693A (en) * | 2017-02-20 | 2017-08-18 | 友达光电股份有限公司 | Electronic component, method of manufacturing the same, transposing element, and method of transposing micro-element |
| CN107919313A (en) * | 2016-10-05 | 2018-04-17 | 启端光电股份有限公司 | Vacuum suction device |
| TWM567474U (en) * | 2018-06-27 | 2018-09-21 | 欣興電子股份有限公司 | Transpose device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045947A (en) * | 2001-07-27 | 2003-02-14 | Canon Inc | Substrate processing apparatus and aligner |
| CN104538344B (en) * | 2014-12-22 | 2017-09-12 | 华中科技大学 | A kind of device shifted for ultra-thin, flexible electronic device, methods and applications |
| CN106229287B (en) * | 2016-09-30 | 2019-04-05 | 厦门市三安光电科技有限公司 | For shifting the transposition head of microcomponent and the transfer method of microcomponent |
| CN107039298B (en) * | 2016-11-04 | 2019-12-24 | 厦门市三安光电科技有限公司 | Transfer device, transfer method, manufacturing method, device and electronic apparatus for micro-component |
| CN207116403U (en) * | 2017-04-21 | 2018-03-16 | 厦门市三安光电科技有限公司 | A kind of transposition head for microcomponent transfer |
-
2018
- 2018-10-31 CN CN201811290469.8A patent/CN111128819B/en active Active
-
2019
- 2019-09-06 KR KR1020217016369A patent/KR20210092225A/en not_active IP Right Cessation
- 2019-09-06 WO PCT/CN2019/104763 patent/WO2020088099A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919313A (en) * | 2016-10-05 | 2018-04-17 | 启端光电股份有限公司 | Vacuum suction device |
| CN107068693A (en) * | 2017-02-20 | 2017-08-18 | 友达光电股份有限公司 | Electronic component, method of manufacturing the same, transposing element, and method of transposing micro-element |
| TWM567474U (en) * | 2018-06-27 | 2018-09-21 | 欣興電子股份有限公司 | Transpose device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20210092225A (en) | 2021-07-23 |
| WO2020088099A1 (en) | 2020-05-07 |
| CN111128819A (en) | 2020-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111128819B (en) | Micro-device transfer device and preparation method thereof | |
| JP5317267B2 (en) | Wafer mounting device | |
| US6731353B1 (en) | Method and apparatus for transferring blocks | |
| KR101066603B1 (en) | Substrate holder unit and subtrate assembling appartus having the same | |
| JP5421629B2 (en) | Device and method for adding and / or separating a wafer from a carrier | |
| TWI700763B (en) | Micro-device transfer device and method for transferring micro-device | |
| WO2020057584A1 (en) | Device and method for batch transfer of microchips | |
| CN112750741B (en) | Transfer substrate and transfer method of micro-component | |
| KR20120109586A (en) | Mounting method and mounting device | |
| CN112768370B (en) | Transfer method and transfer device for micro-component | |
| JP2010118584A5 (en) | ||
| TWI773370B (en) | Patterned vacuum chuck for double-sided processing | |
| US20090056866A1 (en) | Substrate bonding apparatus and method | |
| CN111987193B (en) | Micro light emitting diode transfer device and manufacturing method thereof | |
| KR20120024364A (en) | Substrate bonding apparatus and substrate bonding method | |
| KR101288864B1 (en) | Substrate bonding apparatus | |
| KR102303912B1 (en) | micro vacuum module for semiconductor device transfer and method for transfering semiconductor device using the micro vacuum module | |
| KR100584947B1 (en) | soft mold and the patterning method | |
| TW201503279A (en) | Method and carrier for handling a substrate | |
| CN114420799A (en) | Substrate, transfer method and transfer device of micro light-emitting diode chip | |
| KR20120087462A (en) | Substrate bonding apparatus and substrate bonding method | |
| KR20130054307A (en) | Substrate bonding apparatus and substrate bonding method | |
| KR101299284B1 (en) | Substrate bonding apparatus and substrate bonding method | |
| CN110240112B (en) | Thin film driving structure, method for manufacturing thin film driving structure, and ink jet apparatus | |
| US11295972B2 (en) | Layout structure between substrate, micro-LED array and micro-vacuum module for micro-LED array transfer using micro-vacuum module, and method for manufacturing micro-LED display using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20201217 Address after: No.146 Tianying Road, Chengdu hi tech Zone, Chengdu, Sichuan Province Applicant after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: No. 188, CHENFENG Road, Kunshan high tech Zone, Kunshan City, Suzhou City, Jiangsu Province Applicant before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Applicant before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |