CN114420799A - Substrate, transfer method and transfer device of micro light-emitting diode chip - Google Patents

Substrate, transfer method and transfer device of micro light-emitting diode chip Download PDF

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Publication number
CN114420799A
CN114420799A CN202111492907.0A CN202111492907A CN114420799A CN 114420799 A CN114420799 A CN 114420799A CN 202111492907 A CN202111492907 A CN 202111492907A CN 114420799 A CN114420799 A CN 114420799A
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emitting diode
micro light
substrate
diode chip
floating layer
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CN114420799B (en
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邱成峰
莫炜静
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Shenzhen Stan Technology Co Ltd
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Shenzhen Stan Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a transfer method and a transfer device of a substrate and a micro light-emitting diode chip, wherein the transfer method comprises the following processes: providing a micro light-emitting diode chip with a floating layer, wherein the floating layer is formed on one side surface of the micro light-emitting diode chip; placing the micro light-emitting diode chip with the floating layer in the solution, wherein the micro light-emitting diode chip floats on the liquid level of the solution under the action of the floating layer; providing a transfer substrate, wherein a plurality of groove bodies for accommodating the micro light-emitting diode chips are arranged on the transfer substrate, the positions of the groove bodies are the same as the positions of the micro light-emitting diodes on the active driving back plate, the transfer substrate is lifted from the position below the liquid level of the solution to the liquid level of the solution, and in the lifting process, the transfer substrate supports the micro light-emitting diode chips with the floating layers and vibrates to enable the micro light-emitting diode chips with the floating layers to fall into the groove bodies. The invention can improve the transfer efficiency, the yield and the positioning precision of the micro light-emitting diode chip.

Description

Substrate, transfer method and transfer device of micro light-emitting diode chip
Technical Field
The invention relates to the technical field of manufacturing of micro light-emitting diodes, in particular to a substrate, a transfer method of a micro light-emitting diode chip and a transfer device.
Background
Since various indexes such as brightness, contrast, lifetime, response time, viewing angle, and resolution of the micro light emitting diode are better than those of LCD and OLED display technologies, the micro light emitting diode display technology is considered as the next generation display technology in the industry.
The micro light emitting diode display technology is a display technology which is used for carrying out micro-reduction and array on a traditional light emitting diode structure and manufacturing a driving circuit by adopting a CMOS integrated circuit process so as to realize addressing control and independent driving on each pixel point.
The mass transfer technology of the micro light-emitting diode is one of the key technologies of industrialization; the mass transfer is a technique of transferring a large number of micro led chips onto an active driving backplane after the micro led chips are manufactured. Since the micro led chip is very small (usually tens of microns), how to transfer the micro led chip with high efficiency, high yield and high precision becomes one of the technical problems to be solved in the industry.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a substrate, a transfer method and a transfer device for a micro light-emitting diode chip, so that the transfer efficiency, the yield and the positioning accuracy of the micro light-emitting diode chip are improved.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a method for transferring a micro light-emitting diode chip comprises the following steps:
providing a micro light-emitting diode chip with a floating layer, wherein the floating layer is formed on one side surface of the micro light-emitting diode chip;
placing the micro light-emitting diode chip with the floating layer in a solution, wherein the micro light-emitting diode chip floats on the liquid level of the solution under the action of the floating layer;
providing a substrate, wherein a plurality of groove bodies used for accommodating the micro light-emitting diode chips are arranged on the substrate, the positions of the groove bodies are the same as the positions of the micro light-emitting diodes on an active driving backboard, the groove bodies have magnetism and can magnetically attract the electrodes of the micro light-emitting diode chips, the substrate is lifted from below the liquid level of the solution to the liquid level of the solution, and in the lifting process, the substrate supports the micro light-emitting diode chips, vibrates the substrate, enables the micro light-emitting diode chips to fall into the groove bodies, and enables the electrodes to be attracted with the groove bodies, so that the substrate loaded with the micro light-emitting diode chips is obtained;
and removing the floating layer, and bonding the micro light-emitting diode chip to the active driving backboard.
The invention also provides a transfer device for realizing the transfer method of the micro light-emitting diode chip, which comprises a cavity for containing solution, a carrying platform arranged at the bottom of the cavity, a lifting mechanism for lifting the carrying platform, a base plate fixed on the carrying platform, a locking mechanism arranged on the carrying platform and used for fixing the base plate, and a vibration mechanism for vibrating the base plate, wherein the base plate is provided with a plurality of groove bodies for containing the micro light-emitting diode chips, the positions of the groove bodies are the same as the positions of the micro light-emitting diodes on the active driving backboard, and the bottom and the side wall of each groove body are provided with magnetic metal layers;
injecting a solution into the cavity, fixing the substrate on the carrier through the locking mechanism and below the liquid level of the solution, placing the micro light-emitting diode chip with a floating layer in the solution, forming the floating layer on one side surface of the micro light-emitting diode chip, floating the micro light-emitting diode chip on the liquid level of the solution under the action of the floating layer, driving the carrier to drive the substrate to ascend by the lifting mechanism, supporting the micro light-emitting diode chip by the substrate in the ascending process, driving the substrate to vibrate by the vibrating mechanism, enabling the micro light-emitting diode chip to fall into the groove body, and enabling the electrode of the micro light-emitting diode chip to be magnetically attracted with the magnetic metal layer.
The invention also provides a substrate, wherein the substrate is provided with a plurality of groove bodies for accommodating the micro light-emitting diode chips, the positions of the groove bodies are the same as the positions of the micro light-emitting diodes on the active driving backboard, and the bottom and the side wall of each groove body are provided with magnetic metal layers.
The embodiment of the invention has the following beneficial effects:
according to the embodiment of the invention, the micro light-emitting diode chips are placed in the solution, and then the transfer substrate is adopted to capture the micro light-emitting diode chips floating on the liquid level of the solution from bottom to top, so that the number of the micro light-emitting diode chips captured by the transfer substrate is greater than that of the micro light-emitting diode chips formed on the growth substrate, and the transfer efficiency is improved; the micro light-emitting diode chip is enabled to float on the liquid level in an oriented way by arranging the floating layer; the method for supporting the micro light-emitting diode chip from bottom to top and the vibration mode are adopted to enable the micro light-emitting diode chip to fall into the groove body, so that the damage to the micro light-emitting diode chip is avoided, and the yield of the micro light-emitting diode chip is improved; the micro light-emitting diode chip is captured by the groove body, so that the micro light-emitting diode chip is more accurately positioned on the substrate; the electrode side of the micro light-emitting diode chip 10 is fixed in the tank body 21 by the magnetic property of the tank body, and the micro light-emitting diode chip 10 is more easily captured by the tank body 21 by the magnetic attraction effect.
The transfer method of the invention combines the fluid technology and the magnetic attraction technology, the transfer speed per hour exceeds 5000 thousands, and the mass transfer can be completed without preparing a hollow structure.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Wherein:
fig. 1 is a flowchart of a method for transferring a micro led chip according to an embodiment of the invention.
Fig. 2 is a flowchart of a method for transferring a micro led chip according to another embodiment of the present invention.
Fig. 3 is a schematic structural diagram of the temporary transferring device driving the micro light emitting diode chip to be immersed into the cleaning solution.
Fig. 4 is a schematic structural diagram of a transfer device for a micro led chip according to an embodiment of the invention.
Fig. 5 is a schematic structural diagram of a substrate according to an embodiment of the invention.
Fig. 6 is a schematic structural diagram of a micro led chip transfer device in an initial liquid injection stage according to an embodiment of the invention.
Fig. 7 is a schematic diagram of the structure of the substrate-up motion capture micro-led chip of the structure of fig. 6.
Fig. 8 is a schematic structural view of the structure shown in fig. 7 after being vibrated.
Fig. 9 is a schematic cross-sectional view of a substrate according to an embodiment of the invention.
Fig. 10 is a schematic top view of the structure of fig. 9.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention discloses a transfer method of a micro light-emitting diode chip 10, which comprises the following steps:
step 1: providing a micro light-emitting diode chip 10 with a floating layer 11, wherein the floating layer 11 is formed on one side surface of the micro light-emitting diode chip 10; the micro light-emitting diode chip 10 with the floating layer 11 is placed in a solution, the micro light-emitting diode chip 10 with the floating layer 11 floats on the liquid level of the solution under the action of the floating layer 11, and the floating layer 11 can enable the micro light-emitting diode chip 10 to float on the liquid level in an oriented mode.
Step 2: providing a substrate 20, wherein a plurality of grooves 21 for accommodating the micro light-emitting diode chips 10 are arranged on the substrate 20, the positions of the grooves 21 are the same as the positions of the micro light-emitting diodes on the active driving backboard, the grooves 21 have magnetism and can magnetically attract the electrodes of the micro light-emitting diode chips 10 to lift the substrate 20 from the position below the liquid level of the solution to the liquid level of the solution, in the lifting process, the substrate 20 supports the micro light-emitting diode chips 10 with the floating layers 11, the substrate 20 is vibrated to enable the micro light-emitting diode chips 10 with the floating layers 11 to fall into the grooves 21, and the electrodes of the micro light-emitting diode chips 10 are attracted with the magnetic materials, so that the substrate 20 loaded with the micro light-emitting diode chips 10 with the floating layers 11 is obtained.
And step 3: the floating layer 11 is removed and the micro led chip 10 is bonded to the active driving backplane.
According to the invention, the micro light-emitting diode chips 10 are placed in the solution, and then the substrate 20 is adopted to capture the micro light-emitting diode chips 10 floating on the liquid level of the solution from bottom to top, so that the number of the micro light-emitting diode chips 10 captured by the substrate 20 is larger than that of the micro light-emitting diode chips 10 formed on the growth substrate, and the transfer efficiency is improved; the micro light-emitting diode chip 10 is enabled to float on the liquid level in an oriented way by arranging the floating layer 11; the method of lifting the micro light-emitting diode chip 10 from bottom to top and the vibration mode are adopted to enable the micro light-emitting diode chip 10 to fall into the groove body 21, so that the micro light-emitting diode chip 10 is prevented from being damaged, and the yield of the micro light-emitting diode chip 10 is improved; the micro light-emitting diode chip 10 is captured by the groove body 21, so that the micro light-emitting diode chip 10 is more accurately positioned on the substrate 20; the electrode side of the micro light-emitting diode chip 10 is fixed in the tank 21 by the magnetic property of the tank 21, and the micro light-emitting diode chip 10 is more easily captured by the tank 21 by the magnetic attraction effect. The transfer method of the invention combines the fluid technology and the magnetic attraction technology, the transfer speed per hour exceeds 5000 thousands, and the mass transfer can be completed without preparing a hollow structure.
In the above technical solution, when vibrating the substrate 20, in order to avoid the influence of the buoyancy of the solution on the micro led chip 10 to fall into the groove 21, it is preferable to vibrate the substrate 20 by raising the substrate 20 to a level higher than the liquid level of the solution.
Because the magnetic material magnetically attracted with the electrodes of the micro light-emitting diode chips 10 is arranged in the grooves 21, the substrate 20 can repeatedly enter and exit the solution to capture as many micro light-emitting diode chips 10 as possible until all the grooves 21 of the substrate 20 are attracted with the micro light-emitting diode chips 10.
In a specific embodiment, the material of the floating layer 11 is selected from one or two of polyethylene or chlorinated polyethylene. The polyethylene can be low density polyethylene, linear low density polyethylene or very low density polyethylene. Low density polyethylene is generally produced by radical polymerization at high temperature and high pressure, and has a low density because many branched chains are generated on the molecular chain due to a chain transfer reaction during the reaction, and the branched chains prevent the molecular chain from being arranged neatly, and also has a very soft and sticky low crystallinity and a high transparency. Linear low density polyethylene is produced by copolymerizing some of the copolymers having short chain branches in the main chain of the polyethylene.
The floating layer 11 is too thin, cannot realize directional floating, is too thick, and is difficult to rotate and difficult to attract with the magnetic material in the groove body or the magnetic attraction force is greatly weakened during vibration.
Preferably, the groove 21 is funnel-shaped, and the size of the opening of the groove 21 is larger than the size of the bottom of the groove 21, so that the micro light emitting diode can fall into the groove 21 conveniently. In this embodiment, the height of the slot 21 is less than the height of the micro led chip 10, and specifically, the height of the slot 21 is about 4um to 6 um.
In one embodiment, the method for preparing the substrate 20 includes the following steps:
first, the substrate 20 includes a body, and an insulating layer is formed on an upper surface of the body, where the insulating layer may be made of a hard insulating material such as silicon oxide or silicon nitride.
And etching the insulating layer to form a groove body. Specifically, a photoresist layer may be formed over the insulating layer, then a patterned photoresist layer may be formed by exposure and development, and the insulating layer may be etched by a dry or wet etching method using the patterned photoresist layer as a mask to form a trench.
Then, metal layers with magnetism are formed on the bottom and the side walls of the tank body, so that the tank body has magnetism. Specifically, in this step, the patterned photoresist layer is used as a mask, and a metal layer with magnetic property is formed by a deposition method (for example, CVD, sputtering, electroplating, etc.).
The metal layer with magnetism may include a ferromagnetic metal layer (including a ferromagnetic metal layer with permanent magnetism (for example, iron, cobalt, nickel, etc.) and a ferromagnetic metal layer generating magnetism under the action of an external magnetic field), or may be a metal alloy layer mixed with a ferromagnetic metal component.
The substrate 20 may be a transfer substrate or an active driving backplane, and when the substrate 20 is a transfer substrate, the micro led chip 10 needs to be transferred, so that the slot preferably generates magnetism under the action of an external magnetic field, and the metal layer with magnetism may be a metal layer with magnetism under the action of an external magnetic field, specifically, the metal layer with magnetism under the action of an external magnetic field may include a ferromagnetic metal layer generating magnetism under the action of an external magnetic field, or a metal alloy layer mixed with a ferromagnetic metal component generating magnetism under the action of an external magnetic field. When the substrate 20 is an active driving backplane, the metal layer with magnetism is electrically connected to the circuit on the active driving backplane and the electrode of the micro led chip 10, respectively.
In the above embodiments, the active driving backplane is electrically connected to each of the micro led chips 10, and the active driving backplane provides display control and driving control for each of the micro led chips 10, so as to realize addressing control and individual driving of each of the micro led chips 10 (i.e. each pixel).
In the above embodiments, the solution for dispersing the micro light emitting diode chip 10 may be deionized water, distilled water, isopropyl alcohol, acetone, or the like.
Example 1
Referring to fig. 1, in the present embodiment, the method for transferring the micro light emitting diode chip 10 includes the following steps:
step S11: providing a micro light-emitting diode array plate, wherein the micro light-emitting diode array plate comprises a growth substrate and a plurality of micro light-emitting diode chips 10 distributed on the growth substrate at intervals, and a floating layer 11 is formed on the surface of one side of an electrode of each micro light-emitting diode chip 10.
The growth substrate is specifically sapphire, silicon oxide, silicon nitride and other materials, a semiconductor epitaxial wafer is sequentially deposited on the growth substrate, then micro light-emitting diode units with micron-sized dimensions are formed at intervals by an etching method, and then electrodes are formed on the micro light-emitting diode units to obtain the micro light-emitting diode chip 10.
Step S12: the micro light-emitting diode chip 10 is peeled off from the growth substrate to obtain the micro light-emitting diode chip 10 with the floating layer 11, and the floating layer 11 is formed on one side surface of the electrode of the micro light-emitting diode chip 10. In this step, the micro light emitting diode chip 10 is preferably peeled off from the growth substrate by laser irradiation, and the growth substrate may be removed by mechanical peeling.
Step S13: a huge amount of micro light-emitting diode chips 10 with a floating layer 11 are placed in a solution, the micro light-emitting diode chips 10 float on the liquid level of the solution under the action of the floating layer 11, and the floating layer 11 can enable the micro light-emitting diode chips 10 to float on the liquid level directionally.
Step S14: in this embodiment, the substrate 20 is a transfer substrate, specifically, the transfer substrate is provided with a plurality of slots 21 for accommodating the micro led chips 10, the positions of the slots 21 are the same as the positions of the micro leds on the active driving backplane, and the slots 21 have magnetism and can magnetically attract the electrodes of the micro led chips 10.
In the present embodiment, the groove 21 preferably generates magnetism when power is turned on, and disappears when power is turned off.
Step S15: and (3) rising the transfer substrate from the position below the liquid level of the solution to the liquid level of the solution, wherein in the rising process, the transfer substrate supports the miniature light-emitting diode chip 10 with the floating layer 11, the transfer substrate is vibrated to enable the miniature light-emitting diode chip 10 with the floating layer 11 to fall into the groove body 21, the electrode of the miniature light-emitting diode chip 10 is magnetically attracted with the magnetic material, the miniature light-emitting diode chip 10 with the floating layer 11 is fixed in the groove body 21, and the transfer substrate loaded with the miniature light-emitting diode chip 10 with the floating layer 11 is obtained.
In this embodiment, it is preferable that the slot 21 generates magnetism under the power-on condition, and the power-off magnetism disappears, so that the micro light emitting diode chip 10 is separated from the transfer substrate.
In this step, before the transfer substrate captures the micro led chip 10, the transfer substrate is powered on to make the slot body of the transfer substrate magnetic.
Step S16: and (3) combining a temporary transfer device with the surface of one side of the micro light-emitting diode chip 10, which is far away from the electrode, so that the micro light-emitting diode chip 10 with the floating layer 11 on the transfer substrate is transferred onto the temporary transfer device, the floating layer 11 is removed, and the electrode of the micro light-emitting diode chip 10 is exposed.
In this step, it is preferable that the power is cut off before the micro light emitting diode chip 10 is transferred by the temporary transfer means, so that the groove of the transfer substrate loses magnetism.
Step S17: the temporary transfer device incorporating the micro led chips 10 is placed over the active driving backplane, such that the micro led chips 10 are bonded to the active driving backplane.
In the above embodiment, the temporary transfer device is used only once, so that the probability of displacement and dislocation of the micro light emitting diode chip 10 is significantly reduced, and the transfer accuracy is improved.
Specifically, in an embodiment, the temporary transferring device may be a vacuum adsorption transferring device, such that the vacuum adsorption transferring device adsorbs a side surface of the micro led chips 10 away from the electrodes, and fixes each micro led chip 10 by using an adsorption force, so as to transfer all the micro led chips 10 in batch.
In another embodiment, the temporary transferring device may also be a temporary transferring substrate with adhesive property, so that the temporary transferring substrate is adhered to the surface of the side of the micro light emitting diode chip 10 away from the electrode, and all the micro light emitting diode chips 10 are transferred in batch.
In another embodiment, the temporary transferring device may also be a magnetic transferring device or an electrostatic transferring device, etc.
The floating layer 11 is removed, and in a specific embodiment, the floating layer 11 can be removed by using a cleaning solution, and specifically, the micro-led chip 10 is driven by using a temporary transfer device to be immersed in the cleaning solution, and the cleaning solution dissolves the floating layer 11. In this embodiment, the cleaning solution may be aliphatic hydrocarbon, aromatic hydrocarbon, halogenated hydrocarbon, or the like.
Referring to fig. 3, in an embodiment, the temporary transferring device 40 may be used to drive the micro led chip 10 to a position above the cleaning tank 50, so that the micro led chip 10 is immersed into the cleaning solution downwards to remove the floating layer 11. Of course, the temporary transferring device 40 may also drive the micro led chip 10 to a clean water tank to clean the residual cleaning solution and other contamination particles on the surface of the micro led chip 10.
Example 2
Referring to fig. 2, in the present embodiment, the method for transferring the micro light emitting diode chip 10 includes the following steps:
step S21: providing a micro light-emitting diode array plate, wherein the micro light-emitting diode array plate comprises a growth substrate and a plurality of micro light-emitting diode chips 10 distributed on the growth substrate at intervals; the temporary transfer device to which the micro light emitting diode chip 10 is bonded is obtained by bonding one side surface of the electrode of the micro light emitting diode chip 10 to the temporary transfer device and peeling off the growth substrate.
In this step, the growth substrate is preferably removed by laser irradiation, and may be removed by mechanical peeling.
Step S22: a floating layer 11 is formed on the surface of the micro light-emitting diode chip 10 on the side away from the electrode, and the micro light-emitting diode chip 10 is peeled off from the temporary transfer device to obtain the micro light-emitting diode chip 10 with the floating layer 11, wherein the floating layer 11 is formed on the surface (i.e., the light-emitting surface) of the micro light-emitting diode chip 10 on the side away from the electrode.
Step S23: a huge amount of micro light-emitting diode chips 10 with a floating layer 11 are placed in a solution, the micro light-emitting diode chips 10 float on the liquid level of the solution under the action of the floating layer 11, and the floating layer 11 can enable the micro light-emitting diode chips 10 to float on the liquid level directionally.
Step S24: in this step, the substrate 20 is an active driving back plate, a plurality of grooves 21 for accommodating the micro led chips 10 are disposed on the active driving back plate, and the grooves 21 have magnetism and can magnetically attract the electrodes of the micro led chips 10.
In this embodiment, the slot 21 may have permanent magnetism or may have magnetism only under the action of an external magnetic field.
Step S25: and (2) rising the active driving back plate from the position below the liquid level of the solution to the liquid level of the solution, wherein in the rising process, the active driving back plate supports the miniature LED chip 10 with the floating layer 11, the active driving back plate is vibrated to enable the miniature LED chip 10 with the floating layer 11 to fall into the tank body 21, the electrode of the miniature LED chip 10 is magnetically attracted with the tank body, the miniature LED chip 10 with the floating layer 11 is fixed in the tank body 21, and the active driving back plate loaded with the miniature LED chip 10 with the floating layer 11 is obtained.
Step S26: the floating layer 11 is removed.
When the floating layer 11 is removed, since the floating layer 11 is an organic polymer, in a specific embodiment, a heating and pressurizing method may be adopted to bond the micro-core led chip 10 to the active driving backplane, and at the same time, the floating layer 11 is heated and cured to form a film, and the film is torn off, so that the floating layer 11 can be removed. In this embodiment, the electrodes of the micro led chips 10 and/or the bonding pads of the active driving backplane are softened by heating, so that the electrodes of the micro led chips 10 and the bonding pads of the active driving backplane are bonded together by welding, and meanwhile, the floating layer of the organic polymer is melted by heating, and a thin film is formed after curing under pressurization, so that the floating layer is conveniently removed, no floating layer remains, the process flow is saved, and the production efficiency is improved.
Of course, the cleaning solution of example 1 can be used to remove the floating layer.
In this embodiment, the temporary transfer device may be a vacuum adsorption transfer device, a temporary transfer substrate having adhesiveness, a magnetic transfer device, an electrostatic transfer device, or the like.
Example 3
Referring to fig. 4 to 8, the present invention further provides a transfer device for implementing the above transfer method, including a cavity 31 for accommodating a solution, a stage 32 disposed at the bottom of the cavity 31, a lifting mechanism 33 for lifting the stage 32, a substrate 20 fixed on the stage 32, a locking mechanism 34 disposed on the stage 32 for fixing the substrate 20, and a vibration mechanism for vibrating the substrate 20, wherein a plurality of grooves 21 for accommodating the micro light emitting diode chips 10 are disposed on the substrate 20, the positions of the grooves 21 are the same as the positions of the micro light emitting diodes on the active driving backplane, and magnetic metal layers are disposed at the bottom and the side walls of the grooves 21.
Referring to fig. 6, initially, a solution is injected into the chamber 31, the substrate 20 is fixed on the stage 32 by the locking mechanism 34, and is positioned below the liquid level of the solution, the micro light-emitting diode chip 10 with the floating layer 11 is placed in the solution, the floating layer 11 is formed on one side surface of the micro light emitting diode chip 10, the micro light emitting diode chip 10 with the floating layer 11 floats on the liquid surface of the solution under the action of the floating layer 11, and then, referring to fig. 7, the lifting mechanism 33 drives the carrier 32 to lift the substrate 20, and during the lifting process, the substrate 20 holds up the micro led chip 10 with the floating layer 11, and at this time, the micro led chips 10 are randomly arranged on the surface of the substrate 20, and referring to fig. 8, the vibration mechanism drives the substrate 20 to vibrate, so that the micro led chips 10 with the floating layer 11 fall into the groove 21, and the electrodes of the micro led chips 10 are magnetically attracted to the magnetic metal layer. The mode of combining vibration and magnetic attraction is adopted to ensure that the micro light-emitting diode chip 10 is not only easy to fall into the groove body 21, but also the damage to the micro light-emitting diode chip 10 is minimum.
Example 4
Referring to fig. 5, the present embodiment provides a substrate 20, a plurality of slots 21 for accommodating micro led chips are disposed on the substrate 20, the positions of the slots are the same as the positions of the micro leds on the active driving backplane, and the bottom and the side walls of the slots 21 are provided with magnetic metal layers 24.
Preferably, the groove 21 is funnel-shaped, and the size of the opening of the groove 21 is larger than the size of the bottom of the groove 21, so that the micro light emitting diode can fall into the groove 21 conveniently. In this embodiment, the height of the slot 21 is less than the height of the micro led chip 10, and specifically, the height of the slot 21 is about 4um to 6 um.
Further, referring to fig. 9 and 10, in an embodiment, the base plate 20 includes a body 22 and an insulating layer 23 disposed on the body, and the slot 21 is disposed on the insulating layer 23. The groove 21 can be formed by photolithography and etching, and the manufacturing precision can be improved.
The substrate 20 may be a transfer substrate or an actively driven backplane.
When the substrate 20 is a transfer substrate, it is preferable that the metal layer with magnetism is a metal layer with magnetism under the action of an external magnetic field.
Further, the metal layer with magnetism includes a soft magnetic metal layer, which generates magnetism when power is turned on and disappears when power is turned off, and specifically, the material of the soft magnetic metal layer may include iron-silicon alloy (silicon steel sheet) and various soft magnetic ferrites.
When the substrate 20 is a transfer substrate, in one embodiment, the electrodes of each micro led chip 10 include a positive electrode and a negative electrode, and the positive electrode and the negative electrode are located on the same side of the micro led chip 10, and at this time, the micro led chip 10 is in a flip-chip structure. At this time, when the transfer substrate captures the micro led chips in the solution, the anodes and cathodes of the micro led chips 10 need to be positioned so that the anodes and cathodes of the micro led chips 10 are electrically connected to the corresponding electrodes on the active driving backplane.
In this embodiment, the magnetic metal layer 24 includes a first magnetic metal layer 241 disposed on one side of the bottom and the side wall of the slot body 21 and a second magnetic metal layer 242 disposed on the other side of the bottom and the side wall of the slot body 21, the magnetism of the first magnetic metal layer 241 is opposite to that of the second magnetic metal layer 242, and the first magnetic metal layer 241 and the second magnetic metal layer 242 are respectively used for being magnetically attracted to the anode and the cathode of the micro light emitting diode chip 10 to respectively position the anode and the cathode of the micro light emitting diode chip 10.
When the substrate 20 is an active driving backplane, the body further includes a circuit disposed on the upper surface of the body, and the circuit provides electrical connection for each micro led chip 10.
When the substrate 20 is an active driving backplane, the first magnetic metal layer 241 is insulated from the second magnetic metal layer 242 to avoid short circuit.
Specifically, the spacing groove 25 may be formed between the first magnetic metal layer 241 and the second magnetic metal layer 242 by an etching method, so as to prevent the first magnetic metal layer 241 from being connected to the second magnetic metal layer 242.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (14)

1. A method for transferring a micro light-emitting diode chip is characterized by comprising the following steps:
providing a micro light-emitting diode chip with a floating layer, wherein the floating layer is formed on one side surface of the micro light-emitting diode chip;
placing the micro light-emitting diode chip with the floating layer in a solution, wherein the micro light-emitting diode chip floats on the liquid level of the solution under the action of the floating layer;
providing a substrate, wherein a plurality of groove bodies used for accommodating the micro light-emitting diode chips are arranged on the substrate, the positions of the groove bodies are the same as the positions of the micro light-emitting diodes on an active driving backboard, the groove bodies have magnetism and can magnetically attract the electrodes of the micro light-emitting diode chips, the substrate is lifted from below the liquid level of the solution to the liquid level of the solution, and in the lifting process, the substrate supports the micro light-emitting diode chips, vibrates the substrate, enables the micro light-emitting diode chips to fall into the groove bodies, and enables the electrodes to be attracted with the groove bodies, so that the substrate loaded with the micro light-emitting diode chips is obtained;
and removing the floating layer, and bonding the micro light-emitting diode chip to the active driving backboard.
2. The method for transferring the micro led chip according to claim 1, wherein the substrate is a transfer substrate, and the method for manufacturing the micro led chip with the floating layer comprises the following steps:
providing a micro light-emitting diode array plate, wherein the micro light-emitting diode array plate comprises a growth substrate and a plurality of micro light-emitting diode chips distributed on the growth substrate at intervals, and the floating layer is formed on one side surface of the electrode of each micro light-emitting diode chip;
and peeling the micro light-emitting diode chip from the growth substrate to obtain the micro light-emitting diode chip with the floating layer, wherein the floating layer is formed on one side surface of the electrode.
3. The method of transferring a micro led chip according to claim 2, wherein the removing the floating layer and bonding the micro led chip to the active driving backplane comprises:
combining a temporary transfer device with the surface of one side of the micro light-emitting diode chip, which is far away from the electrode, so that the micro light-emitting diode chip on the substrate is transferred onto the temporary transfer device, the floating layer is exposed, the floating layer is removed, and the electrode is exposed;
and driving the micro light-emitting diode chip to be above the active driving backboard by using the temporary transfer device, so that the micro light-emitting diode chip is bonded to the active driving backboard.
4. The method for transferring the micro led chip according to claim 1, wherein the substrate is the active driving backplane, and the method for manufacturing the micro led chip with the floating layer comprises the following steps:
providing a micro light-emitting diode array plate, wherein the micro light-emitting diode array plate comprises a growth substrate and a plurality of micro light-emitting diode chips distributed on the growth substrate at intervals;
combining one side surface of the electrode of the micro light-emitting diode chip with a temporary transfer device, and peeling off the growth substrate to obtain the temporary transfer device combined with the micro light-emitting diode chip;
and forming the floating layer on the surface of one side of the micro light-emitting diode chip, which is far away from the electrode, peeling the micro light-emitting diode chip from the temporary transfer device to obtain the micro light-emitting diode chip with the floating layer, wherein the floating layer is formed on the surface of one side of the micro light-emitting diode chip, which is far away from the electrode.
5. The method of transferring a micro led chip according to claim 4, wherein the removing the floating layer and bonding the micro led chip to the active driving backplane comprises:
and bonding the micro light-emitting diode chip to the active driving backboard by adopting a heating and pressurizing method, heating and curing the floating layer to form a layer of film, and tearing off the film so as to remove the floating layer.
6. The method for transferring a micro light emitting diode chip as claimed in any one of claims 3 to 5, wherein the temporary transferring means comprises a vacuum adsorption transferring means, a temporary transferring substrate with adhesive property, a magnetic transferring means or an electrostatic transferring means.
7. The method for transferring the micro light emitting diode chip as claimed in any one of claims 1 to 5, wherein the material of the floating layer is selected from one or two of polyethylene and chlorinated polyethylene.
8. The method for transferring the micro light emitting diode chip as claimed in any one of claims 1 to 5, wherein the method for preparing the substrate comprises the following steps:
providing a body, forming an insulating layer on the upper surface of the body, and etching the insulating layer to form the groove body;
and forming magnetic metal layers at the bottom and the side walls of the tank body to enable the tank body to have magnetism.
9. A transfer device of a micro light-emitting diode chip is characterized by comprising a cavity for containing a solution, a carrier arranged at the bottom of the cavity, a lifting mechanism for lifting the carrier, a base plate fixed on the carrier, a locking mechanism arranged on the carrier and used for fixing the base plate, and a vibration mechanism for vibrating the base plate, wherein a plurality of groove bodies for containing the micro light-emitting diode chips are arranged on the base plate, the positions of the groove bodies are the same as the positions of the micro light-emitting diodes on an active driving backboard, and the bottom and the side wall of each groove body are provided with metal layers with magnetism;
injecting a solution into the cavity, fixing the substrate on the carrier through the locking mechanism and below the liquid level of the solution, placing the micro light-emitting diode chip with a floating layer in the solution, forming the floating layer on one side surface of the micro light-emitting diode chip, floating the micro light-emitting diode chip on the liquid level of the solution under the action of the floating layer, driving the carrier to drive the substrate to ascend by the lifting mechanism, supporting the micro light-emitting diode chip by the substrate in the ascending process, driving the substrate to vibrate by the vibrating mechanism, enabling the micro light-emitting diode chip to fall into the groove body, and enabling the electrode of the micro light-emitting diode chip to be magnetically attracted with the magnetic metal layer.
10. The base plate is characterized in that a plurality of groove bodies used for containing micro light-emitting diode chips are arranged on the base plate, the positions of the groove bodies are the same as the positions of the micro light-emitting diodes on an active driving backboard, and magnetic metal layers are arranged at the bottom and the side wall of each groove body.
11. The substrate of claim 10, wherein the substrate is a transfer substrate or an active driven backplane.
12. The base plate of claim 10 or 11, wherein the tank is funnel-shaped, and the size of the opening of the tank is larger than the size of the bottom of the tank.
13. The substrate of claim 12, wherein the magnetic metal layers include a first magnetic metal layer disposed on one side of the bottom and the sidewall of the slot and a second magnetic metal layer disposed on the other side of the bottom and the sidewall of the slot, the first magnetic metal layer has a magnetic property opposite to that of the second magnetic metal layer, and the first magnetic metal layer and the second magnetic metal layer are respectively configured to magnetically attract the anode and the cathode of the micro led chip.
14. The substrate of claim 13, wherein the first magnetic metal layer is insulated from the second magnetic metal layer when the substrate is the active driving backplate.
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