CN114420799B - Substrate, micro light-emitting diode chip transferring method and transferring device - Google Patents
Substrate, micro light-emitting diode chip transferring method and transferring device Download PDFInfo
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- CN114420799B CN114420799B CN202111492907.0A CN202111492907A CN114420799B CN 114420799 B CN114420799 B CN 114420799B CN 202111492907 A CN202111492907 A CN 202111492907A CN 114420799 B CN114420799 B CN 114420799B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a transfer method and a transfer device of a substrate and a miniature light-emitting diode chip, wherein the transfer method comprises the following steps: providing a micro light emitting diode chip with a floating layer, wherein the floating layer is formed on one side surface of the micro light emitting diode chip; placing the micro light-emitting diode chip with the floating layer into the solution, wherein the micro light-emitting diode chip floats on the liquid surface of the solution under the action of the floating layer; providing a transfer substrate, wherein a plurality of groove bodies for accommodating micro light emitting diode chips are arranged on the transfer substrate, the positions of the groove bodies are the same as the positions of the micro light emitting diodes on an active driving backboard, the transfer substrate is lifted from the position below the liquid level of the solution to the liquid level of the solution, in the lifting process, the transfer substrate supports the micro light emitting diode chips with floating layers, and the transfer substrate vibrates to enable the micro light emitting diode chips with the floating layers to fall into the groove bodies. The invention can improve the transfer efficiency, the yield and the positioning precision of the miniature light-emitting diode chip.
Description
Technical Field
The invention relates to the technical field of manufacturing of micro light-emitting diodes, in particular to a substrate, a micro light-emitting diode chip transferring method and a micro light-emitting diode chip transferring device.
Background
Since various indexes such as brightness, contrast ratio, lifetime, response time, visual angle and resolution of the micro light emitting diode are stronger than those of LCD and OLED display technologies, the micro light emitting diode display technology is regarded as a next generation display technology in the industry.
The miniature LED display technology is to miniaturize and array the traditional LED structure and to make the driving circuit by CMOS integrated circuit technology to realize the addressing control and the display technology of individual driving for each pixel point.
The mass transfer technology of micro light emitting diodes is one of key technologies of industrialization; the mass transfer is a technique of transferring a large number of micro light emitting diode chips onto an active driving back plate after the micro light emitting diode chips are manufactured. Since the micro light emitting diode chip is very small (usually several tens micrometers), how to transfer the micro light emitting diode chip with high efficiency, high yield and high precision is one of the technical problems to be solved in the industry.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a substrate, a transfer method and a transfer device for a micro light-emitting diode chip, which improve the transfer efficiency, the yield and the positioning accuracy of the micro light-emitting diode chip.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
the transferring method of the miniature LED chip comprises the following steps:
providing a micro light emitting diode chip with a floating layer, wherein the floating layer is formed on one side surface of the micro light emitting diode chip;
placing the micro light emitting diode chip with the floating layer into a solution, wherein the micro light emitting diode chip floats on the liquid surface of the solution under the action of the floating layer;
providing a substrate, wherein a plurality of groove bodies for accommodating the micro light emitting diode chips are arranged on the substrate, the positions of the groove bodies are the same as the positions of the micro light emitting diodes on an active driving backboard, the groove bodies are magnetic and can magnetically attract electrodes of the micro light emitting diode chips, the substrate is lifted from below the liquid level of the solution to the liquid level of the solution, and in the lifting process, the substrate supports the micro light emitting diode chips, vibrates the substrate, enables the micro light emitting diode chips to fall into the groove bodies, and enables the electrodes to be attracted with the groove bodies, so that the substrate loaded with the micro light emitting diode chips is obtained;
and removing the floating layer, and bonding the micro light emitting diode chip to the active driving backboard.
The invention also provides a transfer device for realizing the transfer method of the micro light-emitting diode chip, which comprises a cavity for accommodating solution, a carrying platform arranged at the bottom of the cavity, a lifting mechanism for lifting the carrying platform, a base plate fixed on the carrying platform, a locking mechanism arranged on the carrying platform and used for fixing the base plate and a vibration mechanism used for vibrating the base plate, wherein a plurality of groove bodies for accommodating the micro light-emitting diode chip are arranged on the base plate, the positions of the groove bodies are the same as the positions of the micro light-emitting diode chip on an active driving backboard, and the bottom and the side wall of the groove bodies are provided with magnetic metal layers;
injecting a solution into the cavity, fixing the substrate on the carrying platform through the locking mechanism, and placing a micro light emitting diode chip with a floating layer in the solution below the liquid level of the solution, wherein the floating layer is formed on one side surface of the micro light emitting diode chip, the micro light emitting diode chip floats on the liquid level of the solution under the action of the floating layer, the lifting mechanism drives the carrying platform to drive the substrate to lift, in the lifting process, the substrate supports the micro light emitting diode chip, and the vibration mechanism drives the substrate to vibrate, so that the micro light emitting diode chip falls into the groove body, and the electrode of the micro light emitting diode chip and the metal layer with magnetism are magnetically attracted.
The invention also provides a substrate, a plurality of groove bodies for accommodating the micro light-emitting diode chips are arranged on the substrate, the positions of the groove bodies are the same as the positions of the micro light-emitting diodes on the active driving backboard, and the bottoms and the side walls of the groove bodies are provided with magnetic metal layers.
The implementation of the embodiment of the invention has the following beneficial effects:
according to the embodiment of the invention, the micro light-emitting diode chips are placed in the solution, and then the micro light-emitting diode chips floating on the liquid level of the solution are captured from bottom to top by adopting the transfer substrate, so that the number of the micro light-emitting diode chips captured by the transfer substrate is larger than that of the micro light-emitting diode chips formed on the growth substrate, and the transfer efficiency is improved; the micro light-emitting diode chip is directionally floated on the liquid level by arranging the floating layer; the method of supporting the micro light-emitting diode chip from bottom to top is adopted, and the micro light-emitting diode chip falls into the groove body in a vibration mode, so that the damage to the micro light-emitting diode chip is avoided, and the yield of the micro light-emitting diode chip is improved; the groove body is adopted to capture the micro light-emitting diode chip, so that the micro light-emitting diode chip is positioned on the substrate more accurately; by making the groove body magnetic, the electrode side of the micro light emitting diode chip 10 is fixed in the groove body 21, and the magnetic attraction makes the micro light emitting diode chip 10 more easily caught by the groove body 21.
According to the transfer method combining the fluid technology and the magnetic attraction technology, the transfer speed per hour exceeds 5000 ten thousand, and mass transfer can be completed without preparing a hollowed-out structure.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Wherein:
fig. 1 is a flow chart of a method for transferring micro led chips according to an embodiment of the present invention.
Fig. 2 is a flow chart of a method for transferring a micro led chip according to another embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a temporary transfer device driving a micro led chip to dip down into a cleaning solution according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a transferring device of a micro led chip according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a substrate according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a transfer device for micro led chips in an initial stage of liquid injection according to an embodiment of the present invention.
Fig. 7 is a schematic diagram of the structure of the micro led chip captured by the upward movement of the substrate in the structure shown in fig. 6.
Fig. 8 is a schematic view of the structure of fig. 7 after vibration.
Fig. 9 is a schematic cross-sectional view of a substrate according to an embodiment of the invention.
Fig. 10 is a schematic top view of the structure shown in fig. 9.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention discloses a transfer method of a miniature light emitting diode chip 10, which comprises the following steps:
step 1: providing a micro light emitting diode chip 10 with a floating layer 11, the floating layer 11 being formed on one side surface of the micro light emitting diode chip 10; the micro light emitting diode chip 10 with the floating layer 11 is placed in the solution, the micro light emitting diode chip 10 with the floating layer 11 floats on the liquid surface of the solution under the action of the floating layer 11, and the floating layer 11 can enable the micro light emitting diode chip 10 to directionally float on the liquid surface.
Step 2: providing a substrate 20, wherein a plurality of groove bodies 21 for accommodating micro light emitting diode chips 10 are arranged on the substrate 20, the positions of the groove bodies 21 are the same as the positions of the micro light emitting diodes on an active driving backboard, the groove bodies 21 are magnetic, electrodes of the micro light emitting diode chips 10 can be magnetically attracted, the substrate 20 is lifted from the position below the liquid level of a solution to the liquid level of the solution, in the lifting process, the substrate 20 supports the micro light emitting diode chips 10 with floating layers 11, the substrate 20 is vibrated, the micro light emitting diode chips 10 with the floating layers 11 fall into the groove bodies 21, and the electrodes of the micro light emitting diode chips 10 are attracted to a magnetic material, so that the substrate 20 loaded with the micro light emitting diode chips 10 with the floating layers 11 is obtained.
Step 3: the floating layer 11 is removed and the micro led chip 10 is bonded to the active driving back plate.
According to the invention, the micro light emitting diode chips 10 are placed in the solution, and then the substrate 20 is adopted to capture the micro light emitting diode chips 10 floating on the liquid surface of the solution from bottom to top, so that the number of the micro light emitting diode chips 10 captured by the substrate 20 is larger than that of the micro light emitting diode chips 10 formed on the growth substrate, and the transfer efficiency is improved; the micro light emitting diode chip 10 is directionally floated on the liquid surface by arranging the floating layer 11; by adopting a method of supporting the micro light emitting diode chip 10 from bottom to top and adopting a vibration mode to enable the micro light emitting diode chip 10 to fall into the groove body 21, the damage to the micro light emitting diode chip 10 is avoided, and the yield of the micro light emitting diode chip 10 is improved; the groove body 21 is adopted to capture the micro light emitting diode chip 10, so that the micro light emitting diode chip 10 is positioned on the substrate 20 more accurately; by making the groove body 21 magnetic, the electrode side of the micro light emitting diode chip 10 is fixed in the groove body 21, and the magnetic attraction makes the micro light emitting diode chip 10 more easily caught by the groove body 21. According to the transfer method combining the fluid technology and the magnetic attraction technology, the transfer speed per hour exceeds 5000 ten thousand, and mass transfer can be completed without preparing a hollowed-out structure.
In the above-mentioned technical solution, when the substrate 20 is vibrated, in order to avoid the buoyancy of the solution to the micro led chip 10 from affecting the micro led chip 10 to fall into the tank 21, it is preferable to make the substrate 20 rise above the liquid surface of the solution to vibrate the substrate 20.
Because the groove body 21 is provided with the magnetic material magnetically attracted with the electrodes of the micro light emitting diode chips 10, the substrate 20 can repeatedly enter and exit the solution to capture as many micro light emitting diode chips 10 as possible until all the groove bodies 21 of the substrate 20 are attracted with the micro light emitting diode chips 10.
In a specific embodiment, the material of the floating layer 11 is selected from one or both of polyethylene or chlorinated polyethylene. The polyethylene may be selected from low density polyethylene, linear low density polyethylene, very low density polyethylene, and the like. Low density polyethylene is generally produced by radical polymerization at high temperature and high pressure, and because of chain transfer reaction during the reaction, many branches are generated on the molecular chains, which prevent the orderly arrangement of the molecular chains, and thus the density is low, and at the same time, the low density polyethylene is very soft and somewhat sticky, and because of its low crystallinity, the transparency of the low density polyethylene is high. Linear low density polyethylene is produced by copolymerizing copolymers having short chain branches in the backbone of the polyethylene.
The floating layer 11 is too thin to realize directional floating, too thick, and difficult to rotate during vibration and also difficult to attract the magnetic material in the tank body or greatly weaken the magnetic attraction.
Preferably, the slot body 21 is funnel-shaped, and the size of the opening of the slot body 21 is larger than the size of the bottom of the slot body 21, so that the micro light emitting diode can fall into the slot body 21. In this embodiment, the height of the groove 21 is smaller than the height of the micro led chip 10, and in particular, the height of the groove 21 is about 4um to 6um.
In one embodiment, the method for preparing the substrate 20 includes the following steps:
first, the substrate 20 includes a body, and an insulating layer is formed on an upper surface of the body, and the insulating layer may be made of a hard insulating material such as silicon oxide or silicon nitride.
And etching the insulating layer to form a groove body. Specifically, a photoresist layer can be formed above the insulating layer, then a patterned photoresist layer is formed by adopting an exposure and development method, the patterned photoresist layer is used as a mask, and a dry or wet etching method is adopted to etch the insulating layer to form a groove body.
Then, a metal layer with magnetism is formed on the bottom and the side wall of the groove body, so that the groove body has magnetism. Specifically, in this step, the patterned photoresist layer is continuously used as a mask, and a deposition method (for example, CVD, sputtering, electroplating, etc.) is used to form a metal layer with magnetism.
The metal layer with magnetism may include a ferromagnetic metal layer (including a ferromagnetic metal layer with permanent magnetism (for example, metals such as iron, cobalt, nickel, etc.) and a ferromagnetic metal layer with magnetism generated by an external magnetic field), or may be a metal alloy layer mixed with ferromagnetic metal components.
The substrate 20 may be a transfer substrate or an active driving back plate, and when the substrate 20 is a transfer substrate, since the micro led chip 10 is required to be transferred, the groove body preferably generates magnetism under the action of an external magnetic field, the metal layer with magnetism may be a metal layer with magnetism under the action of an external magnetic field, specifically, the metal layer with magnetism under the action of an external magnetic field may include a ferromagnetic metal layer generating magnetism under the action of an external magnetic field, or a metal alloy layer mixed with a ferromagnetic metal component generating magnetism under the action of an external magnetic field. When the substrate 20 is an active driving back plate, the metal layer with magnetism is electrically connected with the circuit on the active driving back plate and the electrode of the micro light emitting diode chip 10 respectively.
In the above embodiments, the active driving back plate is electrically connected to each micro led chip 10, and the active driving back plate provides display control and driving control for each micro led chip 10, so as to implement addressing control and individual driving for each micro led chip 10 (i.e., each pixel point).
In the above embodiments, the solution for dispersing the micro led chip 10 may be deionized water, distilled water, isopropyl alcohol, or acetone.
Example 1
Referring to fig. 1, in this embodiment, the transferring method of the micro led chip 10 includes the following steps:
step S11: a micro light emitting diode array board is provided, the micro light emitting diode array board includes a growth substrate and a plurality of micro light emitting diode chips 10 spaced apart on the growth substrate, and a floating layer 11 is formed on one side surface of an electrode of the micro light emitting diode chip 10.
The growth substrate is specifically a material such as sapphire, silicon oxide, silicon nitride, etc., and is deposited on the growth substrate in sequence to form a semiconductor epitaxial wafer, then micro light emitting diode units with a micrometer size are formed at intervals by an etching method, and then electrodes are formed on the micro light emitting diode units to obtain the micro light emitting diode chip 10.
Step S12: the micro light emitting diode chip 10 is peeled off from the growth substrate to obtain the micro light emitting diode chip 10 with the floating layer 11, and the floating layer 11 is formed on one side surface of the electrode of the micro light emitting diode chip 10. In this step, the micro light emitting diode chip 10 is preferably peeled off from the growth substrate by laser irradiation, and the growth substrate may be removed by mechanical peeling.
Step S13: a large number of micro light emitting diode chips 10 with floating layers 11 are placed in a solution, the micro light emitting diode chips 10 float on the liquid surface of the solution under the action of the floating layers 11, and the floating layers 11 can enable the micro light emitting diode chips 10 to directionally float on the liquid surface.
Step S14: in this embodiment, the substrate 20 is a transfer substrate, and specifically, a plurality of grooves 21 for accommodating the micro light emitting diode chips 10 are formed on the transfer substrate, the positions of the grooves 21 are the same as the positions of the micro light emitting diodes on the active driving back plate, and the grooves 21 have magnetism and can magnetically attract the electrodes of the micro light emitting diode chips 10.
In this embodiment, it is preferable that the groove 21 generates magnetism when energized and the magnetism disappears when deenergized.
Step S15: the transfer substrate is lifted from the position below the liquid level of the solution to the liquid level of the solution, in the lifting process, the transfer substrate supports the micro light emitting diode chip 10 with the floating layer 11, the transfer substrate is vibrated, the micro light emitting diode chip 10 with the floating layer 11 falls into the groove body 21, and the electrode of the micro light emitting diode chip 10 is magnetically attracted with the magnetic material, so that the micro light emitting diode chip 10 with the floating layer 11 is fixed in the groove body 21, and the transfer substrate loaded with the micro light emitting diode chip 10 with the floating layer 11 is obtained.
In this embodiment, it is preferable that the groove 21 generates magnetism under the energizing condition, and the de-magnetism disappears, so that the micro led chip 10 is easy to separate from the transfer substrate.
In this step, before the transfer substrate captures the micro led chip 10, the transfer substrate is energized to make the grooves of the transfer substrate magnetic.
Step S16: the temporary transfer device is combined with the surface of the micro light emitting diode chip 10, which is far away from the electrode, so that the micro light emitting diode chip 10 with the floating layer 11 on the transfer substrate is transferred to the temporary transfer device, the floating layer 11 is removed, and the electrode of the micro light emitting diode chip 10 is exposed.
In this step, preferably, before the temporary transfer device transfers the micro led chip 10, the power is turned off to demagnetize the groove of the transfer substrate.
Step S17: the temporary transfer device with the micro light emitting diode chip 10 bonded thereto is placed over the active driving back plate such that the micro light emitting diode chip 10 is bonded to the active driving back plate.
In the above embodiment, the temporary transfer device is used only once, so that the probability of displacement and dislocation of the micro light emitting diode chip 10 is significantly reduced, and the transfer accuracy is improved.
Specifically, in one embodiment, the temporary transferring device may be a vacuum adsorption transferring device, so that the vacuum adsorption transferring device adsorbs a surface of the micro light emitting diode chips 10, which is far away from the electrode, and fixes each micro light emitting diode chip 10 by using an adsorption force, so as to transfer all the micro light emitting diode chips 10 in batches.
In another embodiment, the temporary transfer device may also be a temporary transfer substrate with adhesion, so that the temporary transfer substrate is adhered to a surface of the micro led chip 10 facing away from the electrode, and all the micro led chips 10 are transferred in batch.
In another embodiment, the temporary transfer device may also be a magnetic transfer device or an electrostatic transfer device, etc.
The floating layer 11 is removed, and in one embodiment, the floating layer 11 may be removed by using a cleaning solution, and in particular, the micro led chip 10 is driven to be immersed in the cleaning solution by using a temporary transfer device, and the cleaning solution dissolves the floating layer 11. In this embodiment, the cleaning liquid may be aliphatic hydrocarbon, aromatic hydrocarbon, halogenated hydrocarbon, or the like.
Referring to fig. 3, in an embodiment, the temporary transfer device 40 may be used to drive the micro led chip 10 to above the cleaning tank 50, so that the micro led chip 10 is immersed downward into the cleaning solution, and the floating layer 11 is removed. Of course, the temporary transfer device 40 can also drive the micro light emitting diode chip 10 to the clean water tank to clean the residual cleaning solution and other pollution particles on the surface of the micro light emitting diode chip 10.
Example 2
Referring to fig. 2, in this embodiment, the transferring method of the micro led chip 10 includes the following steps:
step S21: providing a micro light emitting diode array board, wherein the micro light emitting diode array board comprises a growth substrate and a plurality of micro light emitting diode chips 10 which are distributed on the growth substrate at intervals; the temporary transfer device to which the micro light emitting diode chip 10 is bonded is obtained by bonding one side surface of the electrode of the micro light emitting diode chip 10 to the temporary transfer device and peeling the growth substrate.
In this step, the growth substrate is preferably removed by laser irradiation, and may be removed by mechanical lift-off.
Step S22: a floating layer 11 is formed on the surface of the micro light emitting diode chip 10, which is away from the electrode, and the micro light emitting diode chip 10 is peeled off from the temporary transfer device to obtain the micro light emitting diode chip 10 with the floating layer 11, wherein the floating layer 11 is formed on the surface (namely, the light emitting surface) of the micro light emitting diode chip 10, which is away from the electrode.
Step S23: a large number of micro light emitting diode chips 10 with floating layers 11 are placed in a solution, the micro light emitting diode chips 10 float on the liquid surface of the solution under the action of the floating layers 11, and the floating layers 11 can enable the micro light emitting diode chips 10 to directionally float on the liquid surface.
Step S24: in this step, the substrate 20 is an active driving back plate, and the active driving back plate is provided with a plurality of grooves 21 for accommodating the micro light emitting diode chips 10, and the grooves 21 have magnetism and can magnetically attract the electrodes of the micro light emitting diode chips 10.
In this embodiment, the tank 21 may have permanent magnetism or may have magnetism under the action of an external magnetic field.
Step S25: the active driving back plate is lifted from the position below the liquid level of the solution to the liquid level of the solution, in the lifting process, the active driving back plate supports the micro light emitting diode chip 10 with the floating layer 11, the active driving back plate is vibrated to enable the micro light emitting diode chip 10 with the floating layer 11 to fall into the groove body 21, and the electrode of the micro light emitting diode chip 10 is magnetically attracted with the groove body, so that the micro light emitting diode chip 10 with the floating layer 11 is fixed in the groove body 21, and the active driving back plate loaded with the micro light emitting diode chip 10 with the floating layer 11 is obtained.
Step S26: the floating layer 11 is removed.
When removing the floating layer 11, since the floating layer 11 is an organic polymer, in a specific embodiment, the micro-core led chip 10 can be bonded to the active driving back plate by heating and pressurizing, and at the same time, the floating layer 11 is heated and cured to form a film, and the film is torn off, so that the floating layer 11 can be removed. In this embodiment, the electrode of the micro light emitting diode chip 10 and/or the bonding pad of the active driving back plate are softened by heating, so that the electrode of the micro light emitting diode chip 10 and the bonding pad of the active driving back plate are welded and bonded together, meanwhile, the floating layer of the organic polymer is melted by heating and solidified under the condition of pressurization to form a layer of film, so that the floating layer is conveniently removed, no floating layer remains, the process flow is saved, and the production efficiency is improved.
Of course, the cleaning liquid in example 1 may be used to remove the floating layer.
In this embodiment, the temporary transfer device may be a vacuum suction transfer device, a temporary transfer substrate having adhesiveness, a magnetic transfer device, an electrostatic transfer device, or the like.
Example 3
Referring to fig. 4 to 8, the present invention further provides a transfer device for implementing the above transfer method, which includes a cavity 31 for accommodating a solution, a carrier 32 disposed at the bottom of the cavity 31, a lifting mechanism 33 for lifting the carrier 32, a substrate 20 fixed on the carrier 32, a locking mechanism 34 disposed on the carrier 32 and used for fixing the substrate 20, and a vibration mechanism used for vibrating the substrate 20, wherein the substrate 20 is provided with a plurality of grooves 21 for accommodating the micro light emitting diode chips 10, the positions of the grooves 21 are the same as the positions of the micro light emitting diodes on the active driving backboard, and the bottom and the side walls of the grooves 21 are provided with magnetic metal layers.
Referring to fig. 6, initially, a solution is injected into a cavity 31, a substrate 20 is fixed on a carrier 32 by a locking mechanism 34 and is located below the liquid level of the solution, a micro led chip 10 with a floating layer 11 is placed in the solution, the floating layer 11 is formed on one side surface of the micro led chip 10, the micro led chip 10 with the floating layer 11 floats on the liquid level of the solution under the action of the floating layer 11, then, referring to fig. 7, a lifting mechanism 33 drives the carrier 32 to drive the substrate 20 to lift, during the lifting process, the substrate 20 lifts the micro led chip 10 with the floating layer 11, at this time, the micro led chip 10 is disordered on the surface of the substrate 20, and continuously referring to fig. 8, a vibration mechanism drives the substrate 20 to vibrate, so that the micro led chip 10 with the floating layer 11 falls into a groove 21, and an electrode of the micro led chip 10 magnetically attracts with a magnetic metal layer. The combination of vibration and magnetic attraction makes the micro light emitting diode chip 10 not only easy to fall into the groove 21, but also the micro light emitting diode chip 10 can be damaged to the minimum.
Example 4
Referring to fig. 5, the present embodiment provides a substrate 20, on which a plurality of grooves 21 for accommodating micro light emitting diode chips are formed on the substrate 20, the positions of the grooves are the same as those of the micro light emitting diodes on the active driving back plate, and the bottom and the side walls of the grooves 21 are provided with a metal layer 24 with magnetism.
Preferably, the slot body 21 is funnel-shaped, and the size of the opening of the slot body 21 is larger than the size of the bottom of the slot body 21, so that the micro light emitting diode can fall into the slot body 21. In this embodiment, the height of the groove 21 is smaller than the height of the micro led chip 10, and in particular, the height of the groove 21 is about 4um to 6um.
Further, referring to fig. 9 and 10, in an embodiment, the substrate 20 includes a body 22 and an insulating layer 23 disposed on the body, and the groove 21 is disposed on the insulating layer 23. The groove body 21 can be formed by photolithography and etching, improving the manufacturing accuracy.
The substrate 20 may be a transfer substrate or an active drive backplate.
When the substrate 20 is a transfer substrate, the metal layer having magnetic properties is preferably a metal layer having magnetic properties under the action of an external magnetic field.
Further, the metal layer with magnetism comprises a soft magnetic metal layer, magnetism is generated by electrifying, the magnetism is lost when the power failure is caused, and specifically, the material of the soft magnetic metal layer can comprise ferrosilicon alloy (silicon steel sheet), various soft magnetic ferrites and the like.
When the substrate 20 is a transfer substrate, in one embodiment, the electrodes of each micro led chip 10 include a positive electrode and a negative electrode, and the positive electrode and the negative electrode are located on the same side of the micro led chip 10, and the micro led chip 10 is in a flip-chip structure. At this time, when the transfer substrate captures the micro led chips in the solution, it is necessary to position the positive and negative electrodes of the micro led chips 10 so that the positive and negative electrodes of each micro led chip 10 are electrically connected to the corresponding electrodes on the active driving back plate, respectively.
In this embodiment, the metal layer 24 with magnetism includes a first magnetic metal layer 241 disposed at one side of the bottom and the sidewall of the groove 21 and a second magnetic metal layer 242 disposed at the other side of the bottom and the sidewall of the groove 21, the magnetism of the first magnetic metal layer 241 is opposite to that of the second magnetic metal layer 242, and the first magnetic metal layer 241 and the second magnetic metal layer 242 are respectively used for magnetically attracting the positive and negative electrodes of the micro light emitting diode chip 10 to respectively position the positive and negative electrodes of the micro light emitting diode chip 10.
When the substrate 20 is an active driving back plate, the body further includes a circuit disposed on the upper surface of the body, and the circuit provides electrical connection for each micro led chip 10.
When the substrate 20 is an active driving back plate, the first magnetic metal layer 241 is insulated from the second magnetic metal layer 242, so as to avoid short circuit.
Specifically, an etching method may be used to form the spacer 25 between the first magnetic metal layer 241 and the second magnetic metal layer 242, so as to avoid the connection between the first magnetic metal layer 241 and the second magnetic metal layer 242.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (7)
1. The transfer method of the miniature light-emitting diode chip is characterized by comprising the following steps of:
providing a micro light emitting diode chip with a floating layer, wherein the floating layer is formed on one side surface of the micro light emitting diode chip;
placing the micro light emitting diode chip with the floating layer into a solution, wherein the micro light emitting diode chip floats on the liquid surface of the solution under the action of the floating layer;
providing a substrate, wherein a plurality of groove bodies for accommodating the micro light emitting diode chips are arranged on the substrate, the positions of the groove bodies are the same as the positions of the micro light emitting diodes on an active driving backboard, the groove bodies are magnetic and can magnetically attract electrodes of the micro light emitting diode chips, the substrate is lifted from below the liquid level of the solution to the liquid level of the solution, and in the lifting process, the substrate supports the micro light emitting diode chips, vibrates the substrate, enables the micro light emitting diode chips to fall into the groove bodies, and enables the electrodes to be attracted with the groove bodies, so that the substrate loaded with the micro light emitting diode chips is obtained;
and removing the floating layer, and bonding the micro light emitting diode chip to the active driving backboard.
2. The method for transferring a micro light emitting diode chip according to claim 1, wherein the substrate is the active driving back plate, and the method for manufacturing the micro light emitting diode chip with a floating layer comprises the following steps:
providing a micro light emitting diode array plate, wherein the micro light emitting diode array plate comprises a growth substrate and a plurality of micro light emitting diode chips which are distributed on the growth substrate at intervals;
combining one side surface of the electrode of the micro light emitting diode chip with a temporary transfer device, and peeling the growth substrate to obtain the temporary transfer device combined with the micro light emitting diode chip;
and forming a floating layer on the surface of one side of the micro light emitting diode chip, which is far away from the electrode, and stripping the micro light emitting diode chip from the temporary transfer device to obtain the micro light emitting diode chip with the floating layer, wherein the floating layer is formed on the surface of one side of the micro light emitting diode chip, which is far away from the electrode.
3. The method of claim 2, wherein the removing the floating layer, bonding the micro led chip to the active driving back plate comprises:
and bonding the micro light emitting diode chip to the active driving backboard by adopting a heating and pressurizing method, and forming a layer of film after the floating layer is heated and solidified, and tearing off the film so as to remove the floating layer.
4. The method for transferring a micro light emitting diode chip according to any one of claims 2 to 3, wherein the temporary transfer device comprises a vacuum adsorption transfer device, a temporary transfer substrate having adhesion, a magnetic transfer device, or an electrostatic transfer device.
5. The method for transferring a micro light emitting diode chip according to any one of claims 1 to 3, wherein the material of the floating layer is one or both of polyethylene and chlorinated polyethylene.
6. The method for transferring a micro light emitting diode chip according to any one of claims 1 to 3, wherein the method for preparing the substrate comprises the following steps:
providing a body, forming an insulating layer on the upper surface of the body, and etching the insulating layer to form the groove body;
and forming a metal layer with magnetism on the bottom and the side wall of the groove body to enable the groove body to have magnetism.
7. The transfer device of the miniature light-emitting diode chip is characterized by comprising a cavity for accommodating solution, a carrying platform arranged at the bottom of the cavity, a lifting mechanism for lifting the carrying platform, a base plate fixed on the carrying platform, a locking mechanism arranged on the carrying platform and used for fixing the base plate and a vibration mechanism used for vibrating the base plate, wherein a plurality of groove bodies for accommodating the miniature light-emitting diode chip are arranged on the base plate, the positions of the groove bodies are the same as the positions of the miniature light-emitting diode chip on an active driving backboard, and magnetic metal layers are arranged at the bottom and the side walls of the groove bodies;
injecting a solution into the cavity, fixing the substrate on the carrying platform through the locking mechanism, and placing a micro light emitting diode chip with a floating layer in the solution below the liquid level of the solution, wherein the floating layer is formed on one side surface of the micro light emitting diode chip, the micro light emitting diode chip floats on the liquid level of the solution under the action of the floating layer, the lifting mechanism drives the carrying platform to drive the substrate to lift, in the lifting process, the substrate supports the micro light emitting diode chip, and the vibration mechanism drives the substrate to vibrate, so that the micro light emitting diode chip falls into the groove body, and the electrode of the micro light emitting diode chip and the metal layer with magnetism are magnetically attracted.
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| CN107425101A (en) * | 2017-07-11 | 2017-12-01 | 华灿光电（浙江）有限公司 | Method for transferring huge amount of micro light-emitting diode chips |
| CN110707016A (en) * | 2018-04-15 | 2020-01-17 | 鸿富锦精密工业（深圳）有限公司 | Micro device transfer apparatus and micro device transfer method |
| WO2020206985A1 (en) * | 2019-04-12 | 2020-10-15 | 云谷（固安）科技有限公司 | Micro light emitting diode display panel and manufacturing method therefor |
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| US20180190614A1 (en) * | 2016-12-05 | 2018-07-05 | Ananda H. Kumar | Massively parallel transfer of microLED devices |
| US10361337B2 (en) * | 2017-08-18 | 2019-07-23 | Intel Corporation | Micro light-emitting diode (LED) display and fluidic self-assembly of same |
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| CN107425101A (en) * | 2017-07-11 | 2017-12-01 | 华灿光电（浙江）有限公司 | Method for transferring huge amount of micro light-emitting diode chips |
| CN110707016A (en) * | 2018-04-15 | 2020-01-17 | 鸿富锦精密工业（深圳）有限公司 | Micro device transfer apparatus and micro device transfer method |
| WO2020206985A1 (en) * | 2019-04-12 | 2020-10-15 | 云谷（固安）科技有限公司 | Micro light emitting diode display panel and manufacturing method therefor |
| CN112599459A (en) * | 2020-12-16 | 2021-04-02 | 福州京东方光电科技有限公司 | Transfer method of micro light emitting diode chip, display panel and manufacturing method of display panel |
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