TWM555063U

TWM555063U - Apparatus for flattening an element

Info

Publication number: TWM555063U
Application number: TW106215175U
Authority: TW
Inventors: 呂銘漢; 黃正維; 王昱祺; 黃泰源
Original assignee: 日月光半導體製造股份有限公司
Priority date: 2017-10-16
Filing date: 2017-10-16
Publication date: 2018-02-01

Abstract

一種整平裝置包括一放置平台、一第一溫度控制器及一吹氣裝置。該放置平台具有一承接表面。該第一溫度控制器係用以控制該放置平台之承接表面之溫度。該吹氣裝置具有一吹氣表面，該吹氣表面係面對該放置平台之承接表面，且用以朝向該放置平台之承接表面吹出至少一氣體。A leveling device includes a placement platform, a first temperature controller, and an air blowing device. The placing platform has a receiving surface. The first temperature controller is used to control the temperature of the receiving surface of the placing platform. The blowing device has a blowing surface, the blowing surface is facing the receiving surface of the placing platform, and is used to blow out at least one gas toward the receiving surface of the placing platform.

Description

Leveling device

本新型係關於一種整平裝置，特別係關於一種利用氣壓方式之整平裝置。The present invention relates to a leveling device, and more particularly to a leveling device using a pneumatic method.

因應市場需求的改變，電子產品除了被要求性能不斷提升外，在外觀上也被期望能朝向更輕薄短小發展。因此，在半導體製程中，半導體元件（例如晶圓，或包覆複數個晶粒之封裝材料）的厚度首當其衝必須被減薄，最終產品結構的體積才有可能再縮小。然而，該半導體元件本身已經是非常薄，舉例而言，其最大寬度與厚度之比值通常為300、400或500以上。因此，該半導體元件很容易產生較大的翹曲(warpage)，而不易夾持，且影響製程之準確性及最終產品的良率。更為甚者，當該半導體元件被減薄後，其最大寬度與厚度之比值可能會超過1000，因而導致更大的翹曲。因此，如何有效地減少該半導體元件的翹曲係為一重要的課題。In response to changes in market demand, in addition to being required to continuously improve performance, electronic products are also expected to develop toward lighter, thinner, and shorter sizes. Therefore, in the semiconductor manufacturing process, the thickness of a semiconductor device (such as a wafer or a packaging material covering a plurality of dies) must be reduced first, so that the volume of the final product structure can be reduced again. However, the semiconductor element itself is already very thin. For example, the ratio of the maximum width to the thickness is usually 300, 400, or 500 or more. Therefore, the semiconductor device is liable to generate a large warpage, which is difficult to clamp, and affects the accuracy of the manufacturing process and the yield of the final product. What's more, when the semiconductor element is thinned, the ratio of the maximum width to the thickness may exceed 1000, thereby causing greater warpage. Therefore, how to effectively reduce the warpage of the semiconductor device is an important issue.

在一或多個實施例中，一種整平裝置包括一放置平台、一第一溫度控制器及一吹氣裝置。該放置平台具有一承接表面。該第一溫度控制器係用以控制該放置平台之承接表面之溫度。該吹氣裝置具有一吹氣表面，該吹氣表面係面對該放置平台之承接表面，且用以朝向該放置平台之承接表面吹出至少一氣體。In one or more embodiments, a leveling device includes a placement platform, a first temperature controller, and an air blowing device. The placing platform has a receiving surface. The first temperature controller is used to control the temperature of the receiving surface of the placing platform. The blowing device has a blowing surface, the blowing surface is facing the receiving surface of the placing platform, and is used to blow out at least one gas toward the receiving surface of the placing platform.

在半導體領域中，晶片(die)的取得方式通常是將一整片晶圓(wafer)進行薄化處理後才切割成一片片獨立之薄化晶片，而在薄化晶圓過程中，有一道必須的晶背研磨製程(backside grinding proess)。為確保研磨過程中，晶圓均是平整的（使研磨過程中的各施力點一致，方不會造成晶圓破裂或厚薄不均），會先透過接合膠材將晶圓與一載體(carrier)進行接合（其中晶圓的正面(active surface)朝向載體；且載體可為矽基板、玻璃基板或不鏽鋼），然後才開始晶背的粗磨/細磨作業，直至將晶圓厚度減至所需求規格，才將載體從晶圓正面移除(de-carrier)以取得經薄化晶圓，接著切割成晶片。一般而言，晶圓與載體接合的方式不外乎有以下兩種。第一種是在晶圓及載體中間設置一種具有加熱解黏效果的雙面膠來提供暫時黏著力，該雙面膠於常溫下可提供晶圓及載體之間的黏著力，待晶背研磨作業完成後，再藉由升溫加熱或紫外線照射來解除該雙面膠的黏性，即可順利將晶圓與載體分離，但後續的降溫過程時常造成晶圓翹曲變形。第二種則是使用另一種中間膠材來提供晶圓及載體之間的結合力。此方式需要加熱至中間膠材的Tg點（以中間膠材TZNR-A4012為例，其Tg點約是220℃）來使中間膠材軟化以產生黏著力（後續的解黏則是使用該中間膠材專用的稀釋劑來除膠），但熱壓合後的降溫過程（研磨晶背是在常溫下進行），若未對晶圓施以一連續的整平力道，也將導致晶圓逐漸發生翹曲變形而無法確實與載體貼合，於後續在研磨時會有晶圓破裂的風險。如上所述，無論是使用加熱解黏之雙面膠或加熱增黏的中間膠材來將晶圓與載體結合，在加熱膠體的同時，勢必會將晶圓一併加熱至高溫，只要晶圓歷經升降溫過程，便很可能發生翹曲變形，一般來說，尺寸（直徑）介於約200mm至約300mm的晶圓（厚度約150μm至約850μm），其翹曲程度（晶圓之最高點與最低點間之距離）常介於400μm至800μm之間不等。下文所論述之整平裝置及整平一待整平物之方法係利用非接觸式的向下推力壓制該待整平物，以減少該待整平物翹曲及變形等問題。圖1描繪根據本新型之一些實施例的整平裝置1之實例的局部立體示意圖，其中該整平裝置1係為打開之狀態。該整平裝置1包括一放置平台2及一形變壓制器（例如：一吹氣裝置5）。該放置平台2及該形變壓制器（例如：該吹氣裝置5）係大致上分別呈現扁平狀，且該形變壓制器（例如：該吹氣裝置5）之一端係樞接於該放置平台2之一端，使得該形變壓制器（例如：該吹氣裝置5）可相對於該放置平台2轉動。在一實施例中，該形變壓制器（例如：該吹氣裝置5）係平行該放置平台2，且藉由一移動裝置而靠近或遠離該放置平台2，亦即，該形變壓制器（例如：該吹氣裝置5）係可相對於該放置平台2升降。在一實施例中，該放置平台2及該形變壓制器（例如：該吹氣裝置5）係為金屬材質。在另一實施例中，該放置平台2及該形變壓制器（例如：該吹氣裝置5）可為陶瓷材料或塑膠材質。圖2描繪根據本新型之一些實施例的整平裝置1之實例的剖視示意圖，其中該整平裝置1係為閉合之狀態，且該整平裝置1承載一待整平物3。該整平裝置1包括該放置平台2、該形變壓制器（例如：一吹氣裝置5）、一第一溫度控制器41、一第一氣體控制器42、一第二溫度控制器61、一第二氣體控制器62。該放置平台2係大致上呈現一矩形盤狀，其用以承接一待整平物3。該放置平台2具有一第一表面21（承接表面）、一第二表面22、至少一吸附孔23、至少一第一氣體通道24及至少一第一進氣/排氣孔25。該第二表面22係相對該第一表面21。在一實施例中，該第二表面22係大致平行該第一表面21。該吸附孔23開口於該放置平台2之該第一表面21（該承接表面），用以吸住該待整平物3之一下表面32。該第一氣體通道24係為該放置平台2內部之氣體通道，可供氣體流動。該第一氣體通道24係與該至少一吸附孔23相連通。在一實施例中，該放置平台2具有複數個吸附孔23，且該等吸附孔23皆與該第一氣體通道24相連通。該第一進氣/排氣孔25開口於該放置平台2之該第二表面22，用以供氣體流動。該第一氣體通道24係與該至少第一進氣/排氣孔25相連通。該第一氣體控制器42（例如：一空氣幫浦）連接至該第一進氣/排氣孔25，以連通該第一氣體通道24，用以對該第一氣體通道24內的氣體提供一抽氣力或是一吹氣力。因此，該第一氣體控制器42可將該吸附孔23上方之氣體經由該吸附孔23、該第一氣體通道24及該第一進氣/排氣孔25抽離或吸收至該第一氣體控制器42，使得該吸附孔23可以大致完全且同時吸住該待整平物3之該下表面32之整個表面（亦即，該待整平物3之該下表面32可以大致完全緊貼於該放置平台2之該第一表面21（該承接表面））。在一實施例中，該第一氣體控制器42可以抽真空，使得該吸附孔23可以提供真空吸力，以增加吸附效果。此外，該第一氣體控制器42可將氣體經由該第一進氣/排氣孔25、該第一氣體通道24及該吸附孔23吹至該吸附孔23上方，使得該待整平物3之該下表面32可以整面同時離開該放置平台2之該第一表面21（該承接表面），以避免該待整平物3之變形。該第一溫度控制器41係用以控制該放置平台2之該第一表面21（該承接表面）之溫度，進而控制該待整平物3之溫度。如圖2所示，該第一溫度控制器係41係位於該放置平台2之外，且該第一溫度控制器41係導熱連接於該放置平台2。在另一實施例中，該第一溫度控制器係41係位於該放置平台2之內。在一實施例中，該第一溫度控制器41係包含一加熱器、一冷卻器及一溫度感測器（例如：一熱電偶（thermocouple））。在該整平裝置1之操作過程中，該第一溫度控制器41之該加熱器可對該待整平物3加熱至一較高溫度，例如：約220℃（其可由該溫度感測器所量測），使得該待整平物3略微軟化，以利整平作業及增加整平效果。可以理解的是，不同之待整平物3所需加熱的溫度會不同。當整平作業完成後，該第一溫度控制器41之該冷卻器可對該待整平物3冷卻至一較低溫度，例如：約70℃（其可由該溫度感測器所量測）或70℃以下，此時，該待整平物3應該不會再產生翹曲，因此可以將該待整平物3移出該整平裝置1讓其自行冷卻至室溫，之後再繼續後續的製程。然而，可以理解的是，該第一溫度控制器41可以不包含該冷卻器，亦即，讓該待整平物3從該較高溫度（例如：約220℃）自行冷卻至室溫。該形變壓制器（例如：該吹氣裝置5）係大致上呈現一矩形盤狀，其係位於該放置平台2及該待整平物3之上方，且提供至少一非接觸式的向下推力至該待整平物3，以壓制該待整平物3之翹曲或變形。該形變壓制器（例如：該吹氣裝置5）具有一第一表面51、一第二表面52（吹氣表面）、至少一吹氣孔53、至少一第二氣體通道54及至少一第二進氣/排氣孔55。該第二表面52係相對該第一表面51。在一實施例中，該第二表面52係大致平行該第一表面51，且該第二表面52（吹氣表面）係面對且平行該放置平台2之該第一表面21（該承接表面）。該吹氣孔53開口於該形變壓制器（例如：該吹氣裝置5）之該第二表面52（吹氣表面），用以吹出該至少一氣體。特言之，該吹氣孔53係用以朝向該放置平台2之該第一表面21（該承接表面）吹出至少一氣體，且該氣體係吹至該待整平物3之一上表面31，以整平該待整平物3。換言之，在一實施例中，該形變壓制器（例如：該吹氣裝置5）所提供之該非接觸式的向下推力係為一吹氣力。在一實施例中，每一吹氣孔53之位置係對應每一吸附孔23之位置，亦即，每一吹氣孔53之位置係位於每一吸附孔23之正上方。該第二氣體通道54係為該形變壓制器（例如：該吹氣裝置5）內部之氣體通道，可供氣體流動。該第二氣體通道54係與該至少一吹氣孔53相連通。在一實施例中，該形變壓制器（例如：該吹氣裝置5）具有複數個吹氣孔53，且該等吹氣孔53皆與該第二氣體通道54相連通。該第二進氣/排氣孔55開口於該形變壓制器（例如：該吹氣裝置5）之該第一表面51，用以供氣體流動。該第二氣體通道54係與該至少第二進氣/排氣孔55相連通。該第二氣體控制器62（例如：一空氣幫浦）連接至該第二進氣/排氣孔55，以連通該第二氣體通道54，用以對該第二氣體通道54內的氣體提供一吹氣力。因此，該第二氣體控制器62可將氣體經由該第二進氣/排氣孔55、該第二氣體通道54及該吹氣孔53吹至該吹氣孔53下方。亦即，該第二氣體控制器62可提供一被加壓氣體至該第二氣體通道54及該吹氣孔53，而吹至該待整平物3之一上表面31，以壓制或整平該待整平物3。該第二溫度控制器61係用以控制該吹氣孔53之氣體之溫度，使得從該吹氣孔53所吹出之氣體之溫度可以接近或大致等於該待整平物3之溫度。如圖2所示，該第二溫度控制器係61係位於該形變壓制器（例如：該吹氣裝置5）之外，且位於該形變壓制器（例如：該吹氣裝置5）與該第二氣體控制器62之間之通道上，用以控制該第二氣體控制器62吹至該第二進氣/排氣孔55之氣體之溫度。在另一實施例中，該第二溫度控制器係61係位於該形變壓制器（例如：該吹氣裝置5）之內，或是位於該第二氣體控制器62之內。在一實施例中，該第二溫度控制器61係包含一加熱器、一冷卻器及一溫度感測器（例如：一熱電偶（thermocouple））。在該整平裝置1之操作過程中，該第一溫度控制器41之該加熱器可對該待整平物3加熱至一較高溫度，例如：約220℃，使得該待整平物3略微軟化，以利整平作業及增加整平效果。此時，該第二溫度控制器61亦加熱該吹氣孔53之氣體至一較高溫度，例如：約220℃，使得從該吹氣孔53所吹出之氣體之溫度可以接近或大致等於該待整平物3之溫度。藉此，可以確保該待整平物3之第一表面31及第二表面32之溫度一致，避免兩側溫差所造成的損壞（damage）。具體來說，當該待整平物3仍處於高溫狀態時，若直接以一低溫氣體直接噴吹該待整平物3的第一表面31，將可能造成第一表面31結構發生嚴重收縮而發生翹曲，此時所施予的噴吹力若未加以控制將造成該待整平物3之表面破裂（crack）。當整平作業完成後，該第一溫度控制器41之該冷卻器可對該待整平物3逐漸冷卻至一較低溫度，例如：約70℃或70℃以下。此過程中，該第二溫度控制器61亦控制該吹氣孔53之氣體逐漸降低至一較低溫度，例如：約70℃或70℃以下，使得從該吹氣孔53所吹出之氣體之溫度仍可以接近或大致等於該待整平物3之溫度。然而，可以理解的是，該第二溫度控制器61可以不包含該冷卻器。在圖1及圖2所示之整平裝置1中，係以逐漸升溫降溫機制、下方吸附及上方持續施加整平力道（風力）於該待整平物3上，如此可大幅降低該待整平物3翹曲程度。風力整平相較於習知工具（tool）整平的好處在於，風力能提供更全面性的推力，而非如工具一開始僅會先接觸到該待整平物3向上翹起的區域，然後才逐漸接觸到其他區域。風力整平法不僅可提高該待整平物3的整平效率，也可因應不同厚度之待整平物3，調整適當的風力，能避免該待整平物3表面損傷。圖3描繪根據圖1及圖2的整平裝置1之放置平台2的正視示意圖。該放置平台2具有複數個吸附孔23。每一吸附孔23之孔徑D ₁係小於或等於2mm。該等吸附孔23由該放置平台2之該第一表面21（該承接表面）之一中心至該放置平台2之該第一表面21（該承接表面）之一外圍呈現放射狀分布。藉此，可針對該待整平物3提供全面性吸附力。在另一實施例中，該等吸附孔23係均勻分布於該第一表面21（該承接表面）上，例如：陣列分布排列。可以理解的是，該等吸附孔23的分布情形以及孔的形狀可以依實際需要所設計。圖4描繪根據圖1及圖2的整平裝置1之該形變壓制器的正視示意圖。該形變壓制器（例如：該吹氣裝置5）具有複數個吹氣孔53。每一吹氣孔53之孔徑D ₂係小於或等於2mm。可以理解的是，該吹氣孔53之孔徑D ₂如果太大（例如：大於2mm），則所吹出之氣體容易逸散，而降低壓制效果。該等吹氣孔53由該形變壓制器（例如：該吹氣裝置5）之該第二表面52（吹氣表面）之一中心至該形變壓制器（例如：該吹氣裝置5）之該第二表面52（吹氣表面）之一外圍呈現放射狀分布。藉此，可針對該待整平物3提供全面性吹氣力。在另一實施例中，該等吹氣孔53係均勻分布於該第二表面52（吹氣表面）上，例如：陣列分布排列。可以理解的是，該等吹氣孔53的分布情形以及孔的形狀可以依實際需要所設計。圖5描繪根據本新型之一些實施例的整平裝置1a之實例的剖視示意圖。此實施例之整平裝置1a類似於圖2中所說明之整平裝置1，其不同處如下所述。在該整平裝置1a中，該第一溫度控制器係41係位於該放置平台2之內，且該第二溫度控制器係61係位於該形變壓制器（例如：該吹氣裝置5）之內。此時，該第二氣體控制器62係直接連接至該第二進氣/排氣孔55。圖6描繪根據本新型之一些實施例的放置平台2a的正視示意圖。圖7描繪圖6的放置平台2a的剖面示意圖。此實施例之放置平台2a類似於圖2及圖3中所說明之放置平台2，其不同處如下所述。在圖2及圖3之該放置平台2中，每一吸附孔23係為單一圓形孔洞。然而，在圖6及圖7之該放置平台2a中，該等吸附孔23a係為複數圈環狀吸附溝槽，且該等環狀吸附溝槽係為同心。每一環狀吸附溝槽係透過複數個（例如：8個）連通孔洞26與該第一氣體通道24相連通。圖8描繪根據本新型之一些實施例的形變壓制器的正視示意圖。此實施例之形變壓制器（例如：該吹氣裝置5a）類似於圖2及圖4中所說明之形變壓制器（例如：該吹氣裝置5），其不同處如下所述。在圖2及圖4之該形變壓制器（例如：該吹氣裝置5）中，每一吹氣孔53係為單一圓形孔洞。然而，在圖8之該形變壓制器（例如：該吹氣裝置5a）中，該等吹氣孔53a係為複數圈環狀吹氣溝槽，且該等環狀吹氣溝槽係為同心。每一環狀吹氣溝槽係透過複數個（例如：8個）連通孔洞56與該第二氣體通道54相連通。圖9描繪根據本新型之一些實施例的放置平台2b的正視示意圖。此實施例之放置平台2b類似於圖6中所說明之放置平台2a，其不同處如下所述。在圖9之該放置平台2b中，該等吸附孔23b係為複數個吸附短槽，該等吸附短槽係不直接彼此連接。此外，每一吸附短槽係透過複數個（例如：8個）連通孔洞26與該第一氣體通道24相連通。圖10描繪根據本新型之一些實施例的形變壓制器的正視示意圖。此實施例之形變壓制器（例如：該吹氣裝置5b）類似於圖8中所說明之形變壓制器（例如：該吹氣裝置5），其不同處如下所述。在圖10之該形變壓制器（例如：該吹氣裝置5b）中，該等吹氣孔53b係為複數個吹氣短槽，該等吹氣短槽係不直接彼此連接。每一吹氣短槽係透過複數個（例如：8個）連通孔洞56與該第二氣體通道54相連通。圖11描繪根據本新型之一些實施例的放置平台2c的正視示意圖。圖12描繪圖11的放置平台2c的剖面示意圖。此實施例之放置平台2c類似於圖2及圖3中所說明之放置平台2，其不同處如下所述。圖11及圖12之該放置平台2c更包括複數個梢孔（pin hole）27及複數個頂抵梢28。該等梢孔27係貫穿該放置平台2c，且位於該放置平台2c之外周圍。每一頂抵梢28係插設於每一梢孔27中。每一頂抵梢28係可在每一梢孔27中上下移動，以將該待整平物3頂離該放置平台2c之該第一表面21（該承接表面）。可以理解的是，該等梢孔27與頂抵梢28的分布情形以及其形狀可以依實際需要所設計。圖13描繪根據本新型之一些實施例的待整平物3的局部剖面示意圖。該待整平物3具有一晶圓30（例如：矽晶圓）、一第一載體29及一黏膠層291。該晶圓30具有一主動面301、一背面302、複數個凸塊303及複數個銲料304。該背面302係相對於該主動面301。該等凸塊303係位於該主動面301上，且每一銲料304係位於每一凸塊303上。該晶圓30之主動面301係利用該黏膠層291黏附於該第一載體29。在一實施例中，該第一載體29之厚度係為約700μm，且該晶圓30之尺寸（直徑）為約200mm至約300mm。該晶圓30從該背面302經過一薄化製程後，該晶圓30（包含該等凸塊303及該等銲料304）之厚度減至約95μm。因此，該待整平物3整體厚度為約795μm，其翹曲程度為介於400μm至800μm之間，或甚至超過800μm。因此，該待整平物3需要被整平後才能繼續後續製程。在經過例如圖1及圖2所示之整平裝置1整平後，該待整平物3之翹曲程度可減至約20μm，或甚至更小。在整平過程中，該黏膠層291在加熱過程中會軟化，可增加整平效果。圖14描繪根據本新型之一些實施例的待整平物3a的局部剖面示意圖。該待整平物3a具有一第二載體（例如：玻璃載體）33、一離型膜（release film）34、一黏性膜35、複數個電性元件（例如：晶粒）36及一封裝膠材（molding compound）37。該離型膜34係位於該第二載體33上。該黏性膜35係位於該離型膜34上。該等電性元件36係排列於該黏性膜35上。該封裝膠材37包覆該等電性元件36及該黏性膜35。在一實施例中，該第二載體33之厚度係為約700μm，其可為圓形或矩形，且其尺寸（直徑或最大寬度）為約200mm至約300mm。該離型膜34之厚度係為約40μm，該黏性膜35之厚度係為約40μm，且該等電性元件36之高度係為約200μm。該待整平物3a整體厚度為約980μm，其翹曲程度為介於400μm至800μm之間，或甚至超過800μm。由於該整平物3a需要經過一研磨該封裝膠材37之上表面371之製程，使得該等電性元件36之上表面361可以從該封裝膠材37之上表面371露出。然而，上述翹曲會影響該研磨製程。因此，該待整平物3a需要被整平後才能進行該研磨製程。在經過例如圖1及圖2所示之整平裝置1整平後，該待整平物3a之翹曲程度可減至約20μm，或甚至更小。在整平過程中，該離型膜34、該黏性膜及該封裝膠材37在加熱過程中會軟化，可增加整平效果。圖15描繪根據本新型之一些實施例的待整平物3b的局部剖面示意圖。該待整平物3b與圖14之該待整平物3a大致相同，其不同處僅在於該第二載體33、該離型膜34及該黏性膜35被移除，亦即，圖15之該待整平物3b僅包括該等電性元件36及該封裝膠材37。且該等電性元件36之高度係為約200μm。該待整平物3a整體厚度為約200μm，其翹曲程度為介於400μm至800μm之間，或甚至超過800μm。圖15之該待整平物3b係由圖14之該整平物3a經過研磨製程後，再去除該第二載體33、該離型膜34及該黏性膜35所形成。圖15之該待整平物3b後續可以再進行例如形成電路層於該等電性元件36之上表面361及該封裝膠材37之上表面371上，然而，上述翹曲會影響該形成電路層之製程。因此，該待整平物3b需要被整平後才能進行該形成電路層之製程。在經過例如圖1及圖2所示之整平裝置1整平後，該待整平物3c之翹曲程度可減至約20μm，或甚至更小。在整平過程中，該封裝膠材37在加熱過程中會軟化，可增加整平效果。可以理解的是，本新型之待整平物並不限於上述待整平物3（圖13）、待整平物3a（圖14）及待整平物3b（圖15），亦即，於其他製程下所造成的工件翹曲都可適用本新型之整平裝置1,1a來進行整平。換言之，本新型之整平裝置1,1a並非僅適用於整平在研磨前或研磨後所造成的工件翹曲，只要任何工件在製造過程中發生翹曲，皆可用本新型之整平裝置1,1a來進行整平。圖16至圖19描繪根據本新型之一些實施例的整平一待整平物之方法。參看圖16，提供一放置平台2。該放置平台2係大致上呈現一矩形盤狀，其用以承接一待整平物3。該放置平台2具有一第一表面21（承接表面）、一第二表面22、至少一吸附孔23、至少一第一氣體通道24及至少一第一進氣/排氣孔25。該第二表面22係相對該第一表面21。在一實施例中，該第二表面22係大致平行該第一表面21。該吸附孔23開口於該放置平台2之該第一表面21（該承接表面），用以吸住該待整平物3之一下表面32。該第一氣體通道24係為該放置平台2內部之氣體通道，可供氣體流動。該第一氣體通道24係與該至少一吸附孔23相連通。在一實施例中，該放置平台2具有複數個吸附孔23，且該等吸附孔23皆與該第一氣體通道24相連通。該第一進氣/排氣孔25開口於該放置平台2之該第二表面22，用以供氣體流動。該第一氣體通道24係與該至少第一進氣/排氣孔25相連通。在一實施例中，該放置平台2連接一第一氣體控制器42（例如：一空氣幫浦）及一第一溫度控制器41。該第一氣體控制器42係連接至該第一進氣/排氣孔25，以連通該第一氣體通道24，用以對該第一氣體通道24內的氣體提供一抽氣力或是一吹氣力。該第一溫度控制器41係用以控制該放置平台2之該第一表面21（該承接表面）之溫度，進而控制該待整平物3之溫度。如圖16所示，該第一溫度控制器係41係位於該放置平台2之外，且該第一溫度控制器41係導熱連接於該放置平台2。在一實施例中，該第一溫度控制器41係包含一加熱器、一冷卻器及一溫度感測器（例如：一熱電偶（thermocouple））。接著，將該待整平物3置放於該放置平台2上。該待整平物3可以是例如圖13之待整平物3、如圖14之待整平物3a、如圖15之待整平物3b或其他形式之態樣。該待整平物3之翹曲係為笑臉翹曲，且翹曲程度W為400μm至800μm。可以理解的是，該待整平物3之翹曲也可以是哭臉翹曲，且翹曲程度W可以是小於400μm或大於800μm。如果該待整平物3在放置於該放置平台2前本身已是處於高溫狀態，例如：約100℃、200℃或220℃，則該第一溫度控制器41之該加熱器可對該放置平台2預加熱至與該待整平物3相同之溫度，例如：約100℃、200℃或220℃。如果該待整平物3在放置於該放置平台2前係為室溫狀態，則不需此預熱步驟。參看圖17，利用該放置平台2吸住該待整平物3之一下表面32。在一實施例中，係啟動該第一氣體控制器42，以將該吸附孔23上方與該待整平物3之該下表面32之間的氣體71經由該吸附孔23、該第一氣體通道24及該第一進氣/排氣孔25抽離或吸收至該第一氣體控制器42，使得該吸附孔23可以大致完全且同時吸住該待整平物3之該下表面32之整個表面（亦即，該待整平物3之該下表面32可以大致完全緊貼於該放置平台2之該第一表面21（該承接表面））。在一實施例中，該第一氣體控制器42可以抽真空，使得該吸附孔23可以提供真空吸力，以增加吸附效果。在上述過程中，可以同時啟動該第一溫度控制器41之該加熱器，以對該放置平台2加熱，以將該待整平物3之溫度逐漸提高至一較高溫度，例如：約220℃（其可由該溫度感測器所量測），使得該待整平物3略微軟化，以利整平作業及增加整平效果。亦即，在本實施例中，係透過該放置平台2對該待整平物3進行加熱。可以理解的是，不同之待整平物3所需加熱的溫度會不同。參看圖18，提供至少一非接觸式的向下推力至該待整平物3。在一實施例中，該非接觸式的向下推力係為一吹氣力，其係由一形變壓制器（例如：一吹氣裝置5）所提供，且施向該待整平物3之一上表面31。該形變壓制器（例如：該吹氣裝置5）係大致上呈現一矩形盤狀，其係位於該放置平台2及該待整平物3之上方，且用以壓制該待整平物3之翹曲或變形。該形變壓制器（例如：該吹氣裝置5）具有一第一表面51、一第二表面52（吹氣表面）、至少一吹氣孔53、至少一第二氣體通道54及至少一第二進氣/排氣孔55。該第二表面52係相對該第一表面51。在一實施例中，該第二表面52係大致平行該第一表面51，且該第二表面52（吹氣表面）係面對且平行該放置平台2之該第一表面21（該承接表面）。該吹氣孔53開口於該形變壓制器（例如：該吹氣裝置5）之該第二表面52（吹氣表面），用以吹出至少一氣體72。特言之，該吹氣孔53係用以朝向該放置平台2之該第一表面21（該承接表面）吹出該氣體72，且該氣體72係吹至該待整平物3之一上表面31，以整平該待整平物3。該第二氣體通道54係為該形變壓制器（例如：該吹氣裝置5）內部之氣體通道，可供氣體流動。該第二氣體通道54係與該至少一吹氣孔53相連通。在一實施例中，該形變壓制器（例如：該吹氣裝置5）具有複數個吹氣孔53，且該等吹氣孔53皆與該第二氣體通道54相連通。該第二進氣/排氣孔55開口於該形變壓制器（例如：該吹氣裝置5）之該第一表面51，用以供氣體流動。該第二氣體通道54係與該至少第二進氣/排氣孔55相連通。該形變壓制器（例如：一吹氣裝置5）連接一第二氣體控制器62（例如：一空氣幫浦）。該第二氣體控制器62連接至該第二進氣/排氣孔55，以連通該第二氣體通道54，用以對該第二氣體通道54內的氣體提供一吹氣力。因此，該第二氣體控制器62可將該氣體72經由該第二進氣/排氣孔55、該第二氣體通道54及該吹氣孔53吹至該吹氣孔53下方。亦即，該第二氣體控制器62可提供一被加壓氣體至該第二氣體通道54及該吹氣孔53，而吹至該待整平物3之一上表面31，以壓制或整平該待整平物3。該形變壓制器（例如：一吹氣裝置5）更連接一第二溫度控制器61。該第二溫度控制器61係用以控制該吹氣孔53之氣體72之溫度，使得從該吹氣孔53所吹出之氣體72之溫度可以接近或大致等於該待整平物3之溫度。如圖18所示，該第二溫度控制器係61係位於該形變壓制器（例如：該吹氣裝置5）之外，且位於該形變壓制器（例如：該吹氣裝置5）與該第二氣體控制器62之間之通道上，用以控制該第二氣體控制器62吹至該第二進氣/排氣孔55之氣體之溫度。在一實施例中，該第二溫度控制器61係包含一加熱器、一冷卻器及一溫度感測器（例如：一熱電偶（thermocouple））。在上述之操作過程中，該第一溫度控制器41之該加熱器可對該待整平物3加熱至一較高溫度，例如：約220℃，使得該待整平物3略微軟化，以利整平作業及增加整平效果。此時，該第二溫度控制器61亦加熱該吹氣孔53之氣體72至一較高溫度，例如：約220℃，使得從該吹氣孔53所吹出之氣體72之溫度可以接近或大致等於該待整平物3之溫度。藉此，可以確保該待整平物3之第一表面31及第二表面32之溫度一致，避免兩側溫差所造成的損壞（damage）。具體來說，當該待整平物3仍處於高溫狀態時，若直接以一低溫氣體直接噴吹該待整平物3的第一表面31，將可能造成第一表面31結構發生嚴重收縮而發生翹曲，此時所施予的噴吹力若未加以控制將造成該待整平物3之表面破裂（crack）。在一實施例中，該待整平物3之厚度係為約150μm至850μm，且其尺寸（直徑或最大寬度）為約200mm至約300mm，則相關參數設定如下。首先，該形變壓制器（例如：該吹氣裝置5）與該待整平物3間之間距P係小於或等於5mm。如果該形變壓制器（例如：該吹氣裝置5）與該待整平物3間之間距P過大，例如：大於5mm，則該形變壓制器（例如：該吹氣裝置5）所提供吹氣力可能會不足以整平該待整平物3。其次，每一吹氣孔53所提供之吹氣力係為1.5kg/cm ²至2.0kg/cm ²。如果該吹氣力過小（例如：小於1.5kg/cm ²），則無法有效抑制該待整平物3翹曲；如果該吹氣力過大（例如：大於2.0kg/cm ²），則容易造成該待整平物3表面損傷，或吹落該待整平物3表面上的元件。再者，所有該等吹氣孔53所提供之氣體72之總量為大於或等於300L/min。如果該氣體72之總量過小（例如：小於300L/min），則無法有效抑制該待整平物3翹曲。接著，當整平作業完成後，該第一溫度控制器41之該冷卻器可透過該放置平台2對該待整平物3進行冷卻至一較低溫度，例如：約70℃（其可由該溫度感測器所量測）或70℃以下，此過程中，該第二溫度控制器61亦控制該吹氣孔53之氣體72逐漸降低至一較低溫度，例如：約70℃或70℃以下，使得從該吹氣孔53所吹出之氣體72之溫度仍可以接近或大致等於該待整平物3之溫度。此時，該待整平物3應該不會再產生翹曲，因此可以將該待整平物3移出該放置平台2讓其自行冷卻至室溫，之後再繼續後續的製程。然而，可以理解的是，該第一溫度控制器41及該第二溫度控制器61可以不包含該冷卻器，亦即，可以讓該待整平物3從該較高溫度（例如：約220℃）自行冷卻至室溫。參看圖19，移開該形變壓制器（例如：該吹氣裝置5），且接著啟動該第一氣體控制器42，以將氣體73經由該第一進氣/排氣孔25、該第一氣體通道24及該吸附孔23吹至該吸附孔23上方，使得該待整平物3之該下表面32可以整面同時離開該放置平台2之該第一表面21（該承接表面），以避免該待整平物3之變形。在圖11及圖12所示之該放置平台2c之實施例中，該頂抵梢28可以協助將該待整平物3頂離該放置平台2c之該第一表面21（該承接表面）。除非另外規定，否則諸如「上方」、「下方」、「向上」、「左邊」、「右邊」、「向下」、「頂部」、「底部」、「垂直」、「水平」、「側」、「較高」、「下部」、「上部」、「上方」、「下面」等空間描述係關於圖中所展示之定向加以指示。應理解，本文中所使用之空間描述僅出於說明之目的，且本文中所描述之結構之實際實施可以任何定向或方式在空間上配置，其限制條件為本新型之實施例之優點不因此配置而有偏差。如本文中所使用，術語「大致」、「實質上」、「實質的」及「約」用以描述及考慮小變化。當與事件或情形結合使用時，術語可指事件或情形明確發生之情況以及事件或情形極近似於發生之情況。舉例而言，當結合數值使用時，該等術語可指小於或等於彼數值之±10%的變化範圍，諸如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%、或小於或等於±0.05%。舉例而言，若兩個數值之間的差小於或等於該等值之平均值的±10% (諸如，小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%、或小於或等於±0.05%)，則可認為兩個數值「實質上」相同。術語「實質上共面」可指沿著同一平面處於若干微米(μm)內(諸如，沿著同一平面處於40 μm內、30 μm內、20 μm內、10 μm內或1 μm內)之兩個表面。另外，有時在本文中按範圍格式呈現量、比率及其他數值。應理解，此類範圍格式係為便利及簡潔起見而使用，且應靈活地理解為不僅包括明確指定為範圍限制之數值，且亦包括涵蓋於彼範圍內之所有個別數值或子範圍，如同明確指定每一數值及子範圍一般。在對一些實施例之描述中，提供「在」另一組件「上」之一組件可涵蓋前一組件直接在後一組件上(例如，與後一組件實體接觸)的狀況以及一或多個介入組件位於前一組件與後一組件之間的狀況。儘管已參看本新型之特定實施例描述並說明本新型，但此等描述及說明並不限制本新型。熟習此項技術者應理解，在不脫離如由所附申請專利範圍所界定之本新型之真實精神及範疇的情況下，可作出各種改變且可替代等效物。說明可不必按比例繪製。歸因於製造程序及容限，本新型中之藝術再現與實際設備之間可存在區別。可存在並未明確說明的本新型之其他實施例。應將本說明書及圖式視為說明性而非限制性的。可作出修改，以使特定情形、材料、物質組成、方法或製程適應於本新型之目標、精神及範疇。所有此類修改均意欲處於此處所附之申請專利範圍的範疇內。儘管已參看按特定次序執行之特定操作描述本文中所揭示的方法，但應理解，在不脫離本新型之教示的情況下，可組合、再細分，或重新定序此等操作以形成等效方法。因此，除非本文中明確指示，否則操作的次序及分組並非本新型之限制。 In the semiconductor field, the way to obtain a die is usually to thin a whole wafer (wafer) before cutting it into individual thin wafers. In the process of thinning a wafer, one A necessary backside grinding proess. In order to ensure that the wafer is flat during the grinding process (to make the force application points in the grinding process consistent, so as not to cause wafer cracking or uneven thickness), the wafer and a carrier ( carrier) (the active surface of the wafer faces the carrier; and the carrier can be a silicon substrate, a glass substrate, or stainless steel), and then the rough / fine grinding operation of the wafer back is started until the wafer thickness is reduced to With the required specifications, the carrier is removed from the front of the wafer (de-carrier) to obtain a thinned wafer and then cut into wafers. Generally speaking, there are two ways of bonding a wafer to a carrier. The first is to provide a double-sided adhesive with a heating and debonding effect between the wafer and the carrier to provide temporary adhesion. The double-sided adhesive can provide the adhesive force between the wafer and the carrier at normal temperature until the wafer is ground. After the operation is completed, the wafer can be separated from the carrier smoothly by releasing the stickiness of the double-sided tape by heating or ultraviolet irradiation, but the subsequent temperature reduction process often causes the wafer to warp and deform. The second is to use another intermediate glue to provide the bonding force between the wafer and the carrier. This method needs to be heated to the Tg point of the intermediate rubber material (TNG point of the intermediate rubber material TZNR-A4012, for example, its Tg point is about 220 ℃) to soften the intermediate rubber material to produce adhesion (the subsequent debonding is to use the intermediate rubber Special thinner for glue to remove glue), but the temperature reduction process after hot pressing (grinding the crystal back is performed at normal temperature), if a continuous leveling force is not applied to the wafer, it will also cause the wafer to gradually The warpage deformation occurs and it cannot be reliably bonded to the carrier, and there is a risk of wafer cracking during subsequent polishing. As mentioned above, whether the wafer is combined with the carrier by using a heat-debond double-sided adhesive or a heat-tackified intermediate glue, while heating the colloid, the wafer is bound to be heated to a high temperature. After the temperature rise and fall process, warpage deformation is likely to occur. Generally, for wafers with a size (diameter) of about 200 mm to about 300 mm (thickness of about 150 μm to about 850 μm), the degree of warpage (the highest point of the wafer) The distance from the lowest point) usually ranges from 400 μm to 800 μm. The leveling device and the method for leveling an object to be leveled discussed below use non-contact downward thrust to suppress the object to be leveled to reduce problems such as warping and deformation of the object to be leveled. FIG. 1 depicts a partial perspective view of an example of a leveling device 1 according to some embodiments of the present invention, wherein the leveling device 1 is in an opened state. The leveling device 1 includes a placing platform 2 and a deformation suppressor (for example, an air blowing device 5). The placing platform 2 and the deformation suppressor (for example, the air blowing device 5) are generally flat, and one end of the deformation pressing device (for example: the air blowing device 5) is pivotally connected to the placing platform 2. At one end, the deformation suppressor (for example, the air blowing device 5) can be rotated relative to the placement platform 2. In an embodiment, the deformation suppressor (for example, the air blowing device 5) is parallel to the placement platform 2 and is moved closer to or away from the placement platform 2 by a moving device, that is, the deformation suppressor (for example, : The blowing device 5) can be lifted and lowered relative to the placement platform 2. In one embodiment, the placing platform 2 and the deformation suppressor (for example, the air blowing device 5) are made of metal. In another embodiment, the placing platform 2 and the deformation suppressor (for example, the air blowing device 5) may be made of ceramic material or plastic material. FIG. 2 depicts a schematic cross-sectional view of an example of a leveling device 1 according to some embodiments of the present invention. The leveling device 1 is in a closed state, and the leveling device 1 carries an object to be leveled 3. The leveling device 1 includes the placing platform 2, the deformation suppressor (for example, an air blowing device 5), a first temperature controller 41, a first gas controller 42, a second temperature controller 61, a Second gas controller 62. The placing platform 2 is substantially in the shape of a rectangular disk, and is used for receiving a to-be-leveled object 3. The placing platform 2 has a first surface 21 (a receiving surface), a second surface 22, at least one adsorption hole 23, at least one first gas passage 24, and at least one first air inlet / exhaust hole 25. The second surface 22 is opposite to the first surface 21. In one embodiment, the second surface 22 is substantially parallel to the first surface 21. The suction hole 23 is opened on the first surface 21 (the receiving surface) of the placing platform 2, and is used to suck one of the lower surfaces 32 of the object to be leveled 3. The first gas channel 24 is a gas channel inside the placing platform 2 and is used for gas flow. The first gas channel 24 is in communication with the at least one adsorption hole 23. In one embodiment, the placing platform 2 has a plurality of adsorption holes 23, and the adsorption holes 23 are all in communication with the first gas channel 24. The first air inlet / exhaust hole 25 is opened on the second surface 22 of the placing platform 2 for gas flow. The first gas passage 24 is in communication with the at least first intake / exhaust hole 25. The first gas controller 42 (for example, an air pump) is connected to the first air inlet / exhaust hole 25 to communicate with the first gas passage 24 for providing gas in the first gas passage 24. A pumping force or a blowing force. Therefore, the first gas controller 42 can extract or absorb the gas above the adsorption hole 23 to the first gas through the adsorption hole 23, the first gas passage 24, and the first intake / exhaust hole 25. The controller 42 so that the suction hole 23 can substantially completely and simultaneously hold the entire surface of the lower surface 32 of the object to be leveled 3 (that is, the lower surface 32 of the object to be leveled 3 can be substantially completely abutted completely) On the first surface 21 (the receiving surface) of the placing platform 2). In one embodiment, the first gas controller 42 can be evacuated, so that the adsorption hole 23 can provide a vacuum suction force to increase the adsorption effect. In addition, the first gas controller 42 can blow gas through the first intake / exhaust hole 25, the first gas passage 24, and the adsorption hole 23 above the adsorption hole 23, so that the object to be leveled 3 The lower surface 32 can be separated from the first surface 21 (the receiving surface) of the placing platform 2 at the same time on the entire surface to avoid deformation of the object to be leveled 3. The first temperature controller 41 is used to control the temperature of the first surface 21 (the receiving surface) of the placing platform 2, and then control the temperature of the object to be leveled 3. As shown in FIG. 2, the first temperature controller 41 is located outside the placement platform 2, and the first temperature controller 41 is thermally connected to the placement platform 2. In another embodiment, the first temperature controller 41 is located inside the placing platform 2. In one embodiment, the first temperature controller 41 includes a heater, a cooler, and a temperature sensor (for example, a thermocouple). During the operation of the leveling device 1, the heater of the first temperature controller 41 can heat the object to be leveled 3 to a higher temperature, for example, about 220 ° C (which can be measured by the temperature sensor). (Measured), making the to-be-leveled object 3 slightly Microsoft, in order to facilitate the leveling operation and increase the leveling effect. It can be understood that the heating temperature required for the leveling object 3 will be different. When the leveling operation is completed, the cooler of the first temperature controller 41 can cool the object to be leveled 3 to a lower temperature, for example, about 70 ° C (which can be measured by the temperature sensor). Or below 70 ° C, at this time, the object to be leveled 3 should not warp, so the object to be leveled 3 can be removed from the leveling device 1 and allowed to cool to room temperature by itself, and then continue Process. However, it can be understood that the first temperature controller 41 may not include the cooler, that is, the leveling object 3 is allowed to cool from the higher temperature (for example, about 220 ° C.) to room temperature by itself. The deformation suppressor (for example, the air blowing device 5) has a substantially rectangular disk shape, which is located above the placing platform 2 and the object to be leveled 3, and provides at least a non-contact downward thrust force. Go to the object to be leveled 3 to suppress warpage or deformation of the object to be leveled 3. The deformation suppressor (for example, the blowing device 5) has a first surface 51, a second surface 52 (blowing surface), at least one blowing hole 53, at least one second gas channel 54, and at least one second inlet气 / exhaust hole 55. The second surface 52 is opposite to the first surface 51. In an embodiment, the second surface 52 is substantially parallel to the first surface 51, and the second surface 52 (the air blowing surface) faces and is parallel to the first surface 21 (the receiving surface of the placing platform 2) ). The air blowing hole 53 is opened in the second surface 52 (air blowing surface) of the deformation suppressor (for example, the air blowing device 5) for blowing out the at least one gas. In particular, the blow hole 53 is used to blow at least one gas toward the first surface 21 (the receiving surface) of the placing platform 2, and the gas system blows to an upper surface 31 of the object to be leveled 3, To level the object to be leveled 3. In other words, in one embodiment, the non-contact downward thrust provided by the deformation suppressor (for example, the air blowing device 5) is an air blowing force. In one embodiment, the position of each blow hole 53 corresponds to the position of each adsorption hole 23, that is, the position of each blow hole 53 is directly above each adsorption hole 23. The second gas passage 54 is a gas passage inside the deformation suppressor (for example, the blowing device 5), and can be used for gas flow. The second gas passage 54 is in communication with the at least one blow hole 53. In one embodiment, the deformation suppressor (for example, the blowing device 5) has a plurality of blowing holes 53, and the blowing holes 53 are in communication with the second gas passage 54. The second air inlet / exhaust hole 55 is opened in the first surface 51 of the deformation suppressor (for example, the air blowing device 5) for the gas to flow. The second gas passage 54 is in communication with the at least second intake / exhaust hole 55. The second gas controller 62 (for example, an air pump) is connected to the second air inlet / exhaust hole 55 to communicate with the second gas passage 54 for providing gas in the second gas passage 54. A blow. Therefore, the second gas controller 62 can blow the gas below the air blowing hole 53 through the second air inlet / exhaust hole 55, the second gas passage 54 and the air blowing hole 53. That is, the second gas controller 62 can provide a pressurized gas to the second gas passage 54 and the blow hole 53 and blow to a top surface 31 of the object to be leveled 3 to suppress or level it. The to-be-leveled object 3. The second temperature controller 61 is used to control the temperature of the gas in the blow hole 53 so that the temperature of the gas blown out from the blow hole 53 can be close to or approximately equal to the temperature of the object 3 to be leveled. As shown in FIG. 2, the second temperature controller 61 is located outside the deformation suppressor (for example, the blowing device 5), and is located between the deformation suppressor (for example, the blowing device 5) and the first The passage between the two gas controllers 62 is used to control the temperature of the gas blown by the second gas controller 62 to the second air inlet / exhaust hole 55. In another embodiment, the second temperature controller 61 is located in the deformation suppressor (for example, the air blowing device 5) or in the second gas controller 62. In one embodiment, the second temperature controller 61 includes a heater, a cooler, and a temperature sensor (for example, a thermocouple). During the operation of the leveling device 1, the heater of the first temperature controller 41 can heat the object to be leveled 3 to a higher temperature, for example, about 220 ° C., so that the object to be leveled 3 Slightly simplification to facilitate leveling operations and increase the leveling effect. At this time, the second temperature controller 61 also heats the gas of the blow hole 53 to a higher temperature, for example, about 220 ° C, so that the temperature of the gas blown from the blow hole 53 can be close to or approximately equal to the to-be-adjusted Temperature of flat object 3. Thereby, the temperature of the first surface 31 and the second surface 32 of the object to be leveled 3 can be ensured to be the same, and damage caused by the temperature difference between the two sides can be avoided. Specifically, when the object to be leveled 3 is still in a high temperature state, if the first surface 31 of the object to be leveled 3 is directly sprayed with a low-temperature gas, the structure of the first surface 31 may be severely contracted. Warpage occurs, and if the spraying force applied at this time is not controlled, the surface of the object to be leveled 3 will be cracked. When the leveling operation is completed, the cooler of the first temperature controller 41 may gradually cool the object to be leveled 3 to a lower temperature, for example, about 70 ° C. or below. During this process, the second temperature controller 61 also controls the gas in the blow hole 53 to gradually lower to a lower temperature, for example, about 70 ° C. or below, so that the temperature of the gas blown out from the blow hole 53 remains. It may be close to or approximately equal to the temperature of the object 3 to be leveled. However, it can be understood that the second temperature controller 61 may not include the cooler. In the leveling device 1 shown in FIG. 1 and FIG. 2, a gradual heating and cooling mechanism is adopted, and a leveling force (wind) is continuously applied to the leveling object 3 above, so that the leveling device 3 can be greatly reduced. Flat object 3 warping degree. The advantage of wind leveling compared to the conventional tool leveling is that wind can provide a more comprehensive thrust, instead of the tool first only touching the area where the object to be leveled 3 is lifted up, Then they gradually came into contact with other areas. The wind leveling method can not only improve the leveling efficiency of the object to be leveled 3, but also adjust the appropriate wind force according to different thicknesses of the object to be leveled 3 to avoid damage to the surface of the object to be leveled 3. FIG. 3 depicts a schematic front view of the placement platform 2 of the leveling device 1 according to FIGS. 1 and 2. The placement platform 2 has a plurality of suction holes 23. Diameter D of each adsorption hole 23 ₁ It is less than or equal to 2mm. The adsorption holes 23 are radially distributed from the center of the first surface 21 (the receiving surface) of the placing platform 2 to the periphery of the first surface 21 (the receiving surface) of the placing platform 2. Thereby, a comprehensive adsorption force can be provided for the object to be leveled 3. In another embodiment, the adsorption holes 23 are uniformly distributed on the first surface 21 (the receiving surface), for example, they are arranged in an array. It can be understood that the distribution of the adsorption holes 23 and the shape of the holes can be designed according to actual needs. FIG. 4 depicts a schematic front view of the deformation suppressor of the leveling device 1 according to FIGS. 1 and 2. The deformation suppressor (for example, the blowing device 5) has a plurality of blowing holes 53. Aperture D of each blow hole 53 ₂ It is less than or equal to 2mm. It can be understood that the hole diameter D of the blowing hole 53 ₂ If it is too large (for example: more than 2mm), the blown gas will easily dissipate, which will reduce the pressing effect. The blow holes 53 are from the center of one of the second surface 52 (blowing surface) of the deformation suppressor (for example: the blowing device 5) to the first of the deformation suppressor (for example: the blowing device 5). The periphery of one of the two surfaces 52 (the blowing surface) is radially distributed. Thereby, a comprehensive blowing force can be provided for the object to be leveled 3. In another embodiment, the air blowing holes 53 are uniformly distributed on the second surface 52 (air blowing surface), for example, they are arranged in an array. It can be understood that the distribution of the blow holes 53 and the shape of the holes can be designed according to actual needs. FIG. 5 depicts a schematic cross-sectional view of an example of a leveling device 1a according to some embodiments of the present invention. The leveling device 1 a of this embodiment is similar to the leveling device 1 illustrated in FIG. 2, and the differences are as follows. In the leveling device 1a, the first temperature controller 41 is located in the placement platform 2 and the second temperature controller 61 is located in the deformation suppressor (for example, the air blowing device 5). Inside. At this time, the second gas controller 62 is directly connected to the second intake / exhaust hole 55. FIG. 6 depicts a schematic front view of a placing platform 2a according to some embodiments of the present invention. FIG. 7 depicts a schematic cross-sectional view of the placement platform 2 a of FIG. 6. The placement platform 2a of this embodiment is similar to the placement platform 2 illustrated in FIG. 2 and FIG. 3, and the differences are as follows. In the placement platform 2 of FIG. 2 and FIG. 3, each adsorption hole 23 is a single circular hole. However, in the placement platform 2a of FIG. 6 and FIG. 7, the adsorption holes 23a are a plurality of circles of annular adsorption grooves, and the annular adsorption grooves are concentric. Each annular adsorption groove is in communication with the first gas channel 24 through a plurality of (for example, eight) communication holes 26. FIG. 8 depicts a schematic front view of a deformation suppressor according to some embodiments of the present invention. The deformation suppressor (for example: the blowing device 5 a) of this embodiment is similar to the deformation suppressor (for example: the blowing device 5) illustrated in FIG. 2 and FIG. 4, and the differences are as follows. In the deformation suppressor of FIG. 2 and FIG. 4 (for example, the blowing device 5), each blowing hole 53 is a single circular hole. However, in the deformation suppressor of FIG. 8 (for example, the blowing device 5a), the blowing holes 53a are a plurality of ring-shaped blowing grooves, and the ring-shaped blowing grooves are concentric. Each annular blowing groove is communicated with the second gas passage 54 through a plurality of (for example, eight) communication holes 56. FIG. 9 depicts a schematic front view of a placing platform 2b according to some embodiments of the present invention. The placement platform 2b of this embodiment is similar to the placement platform 2a illustrated in FIG. 6, with the differences as described below. In the placement platform 2b of FIG. 9, the adsorption holes 23b are a plurality of adsorption short grooves, and the adsorption short grooves are not directly connected to each other. In addition, each of the adsorption short grooves communicates with the first gas channel 24 through a plurality of (for example, eight) communication holes 26. FIG. 10 depicts a schematic front view of a deformation suppressor according to some embodiments of the present invention. The deformation suppressor (for example: the blowing device 5 b) of this embodiment is similar to the deformation suppressor (for example: the blowing device 5) illustrated in FIG. 8, and the differences are as follows. In the deformation suppressor (for example, the blowing device 5b) of FIG. 10, the blowing holes 53b are a plurality of short blowing slots, and the short blowing slots are not directly connected to each other. Each of the short gas blowing slots communicates with the second gas channel 54 through a plurality of (for example, eight) communication holes 56. FIG. 11 depicts a schematic front view of a placing platform 2c according to some embodiments of the present invention. FIG. 12 depicts a schematic cross-sectional view of the placement platform 2c of FIG. 11. The placement platform 2c of this embodiment is similar to the placement platform 2 illustrated in FIG. 2 and FIG. 3, and the differences are as follows. The placement platform 2c of FIG. 11 and FIG. 12 further includes a plurality of pin holes 27 and a plurality of abutment pins 28. The tip holes 27 pass through the placement platform 2c and are located outside the placement platform 2c. Each tip abutment 28 is inserted in each tip hole 27. Each tip abutment 28 is movable up and down in each tip hole 27 to lift the object to be leveled 3 away from the first surface 21 (the receiving surface) of the placing platform 2c. It can be understood that the distribution of the tip holes 27 and the abutment tips 28 and their shapes can be designed according to actual needs. FIG. 13 is a schematic partial cross-sectional view of the object to be leveled 3 according to some embodiments of the present invention. The object to be leveled 3 has a wafer 30 (for example, a silicon wafer), a first carrier 29 and an adhesive layer 291. The wafer 30 has an active surface 301, a back surface 302, a plurality of bumps 303, and a plurality of solders 304. The back surface 302 is opposite to the active surface 301. The bumps 303 are located on the active surface 301, and each solder 304 is located on each of the bumps 303. The active surface 301 of the wafer 30 is adhered to the first carrier 29 by the adhesive layer 291. In one embodiment, the thickness of the first carrier 29 is about 700 μm, and the size (diameter) of the wafer 30 is about 200 mm to about 300 mm. After the wafer 30 undergoes a thinning process from the back surface 302, the thickness of the wafer 30 (including the bumps 303 and the solder 304) is reduced to about 95 μm. Therefore, the overall thickness of the object to be leveled 3 is about 795 μm, and the degree of warpage is between 400 μm and 800 μm, or even more than 800 μm. Therefore, the object to be leveled 3 needs to be leveled before continuing the subsequent process. After being leveled by, for example, the leveling device 1 shown in FIGS. 1 and 2, the degree of warpage of the object to be leveled 3 can be reduced to about 20 μm, or even smaller. During the leveling process, the adhesive layer 291 is softened during the heating process, which can increase the leveling effect. FIG. 14 is a schematic partial cross-sectional view of the object to be leveled 3a according to some embodiments of the present invention. The object to be leveled 3a has a second carrier (such as a glass carrier) 33, a release film 34, an adhesive film 35, a plurality of electrical components (such as a die) 36, and a package.胶材 (molding compound) 37. The release film 34 is located on the second carrier 33. The adhesive film 35 is located on the release film 34. The electrical components 36 are arranged on the adhesive film 35. The sealing material 37 covers the electrical components 36 and the adhesive film 35. In one embodiment, the thickness of the second carrier 33 is about 700 μm, which can be circular or rectangular, and its size (diameter or maximum width) is about 200 mm to about 300 mm. The thickness of the release film 34 is about 40 μm, the thickness of the adhesive film 35 is about 40 μm, and the height of the electrical components 36 is about 200 μm. The overall thickness of the object to be leveled 3a is about 980 μm, and the degree of warpage is between 400 μm and 800 μm, or even more than 800 μm. Since the leveling object 3a needs to undergo a process of grinding the upper surface 371 of the sealing compound 37, the upper surface 361 of the electrical components 36 can be exposed from the upper surface 371 of the sealing compound 37. However, the aforementioned warpage may affect the polishing process. Therefore, the object to be leveled 3a needs to be leveled before the grinding process can be performed. After leveling, for example, by the leveling device 1 shown in FIG. 1 and FIG. 2, the degree of warpage of the object to be leveled 3 a can be reduced to about 20 μm, or even smaller. During the leveling process, the release film 34, the adhesive film, and the sealing compound 37 are softened during heating, which can increase the leveling effect. FIG. 15 is a schematic partial cross-sectional view of the object to be leveled 3b according to some embodiments of the present invention. The to-be-leveled object 3b is substantially the same as the to-be-leveled object 3a of FIG. 14, except that the second carrier 33, the release film 34, and the adhesive film 35 are removed, that is, FIG. 15 The to-be-leveled object 3b includes only the electrical components 36 and the encapsulant 37. The height of the electrical components 36 is about 200 μm. The overall thickness of the object to be leveled 3a is about 200 μm, and the degree of warpage is between 400 μm and 800 μm, or even more than 800 μm. The leveling object 3b of FIG. 15 is formed by the leveling object 3a of FIG. 14 after the grinding process, and then removing the second carrier 33, the release film 34, and the adhesive film 35. The to-be-leveled object 3b in FIG. 15 can be subsequently formed, for example, by forming a circuit layer on the upper surface 361 of the electrical components 36 and the upper surface 371 of the encapsulant 37. However, the above-mentioned warpage will affect the formation of the circuit. Layer process. Therefore, the process of forming the circuit layer needs to be performed after the object to be leveled 3b is leveled. After leveling, for example, by the leveling device 1 shown in FIG. 1 and FIG. 2, the degree of warpage of the object to be leveled 3 c can be reduced to about 20 μm, or even smaller. During the leveling process, the encapsulating material 37 is softened during the heating process, which can increase the leveling effect. It can be understood that the new leveling object to be leveled is not limited to the above-mentioned leveling object 3 (Figure 13), the leveling object 3a (Figure 14), and the leveling object 3b (Figure 15), that is, in The warpage of the workpiece caused by other processes can be leveled using the new leveling device 1,1a. In other words, the new leveling device 1,1a is not only suitable for leveling the warpage of the workpiece before or after grinding. As long as any warpage occurs during the manufacturing process, the new leveling device 1 can be used. 1a to level. 16 to 19 depict a method of leveling a to-be-leveled object according to some embodiments of the present invention. Referring to Fig. 16, a placement platform 2 is provided. The placing platform 2 is substantially in the shape of a rectangular disk, and is used for receiving a to-be-leveled object 3. The placing platform 2 has a first surface 21 (a receiving surface), a second surface 22, at least one adsorption hole 23, at least one first gas passage 24, and at least one first air inlet / exhaust hole 25. The second surface 22 is opposite to the first surface 21. In one embodiment, the second surface 22 is substantially parallel to the first surface 21. The suction hole 23 is opened on the first surface 21 (the receiving surface) of the placing platform 2, and is used to suck one of the lower surfaces 32 of the object to be leveled 3. The first gas channel 24 is a gas channel inside the placing platform 2 and is used for gas flow. The first gas channel 24 is in communication with the at least one adsorption hole 23. In one embodiment, the placing platform 2 has a plurality of adsorption holes 23, and the adsorption holes 23 are all in communication with the first gas channel 24. The first air inlet / exhaust hole 25 is opened on the second surface 22 of the placing platform 2 for gas flow. The first gas passage 24 is in communication with the at least first intake / exhaust hole 25. In one embodiment, the placement platform 2 is connected to a first gas controller 42 (eg, an air pump) and a first temperature controller 41. The first gas controller 42 is connected to the first air inlet / exhaust hole 25 to communicate with the first gas passage 24 and is used to provide a suction force or a blow to the gas in the first gas passage 24. strength. The first temperature controller 41 is used to control the temperature of the first surface 21 (the receiving surface) of the placing platform 2, and then control the temperature of the object to be leveled 3. As shown in FIG. 16, the first temperature controller 41 is located outside the placement platform 2, and the first temperature controller 41 is thermally connected to the placement platform 2. In one embodiment, the first temperature controller 41 includes a heater, a cooler, and a temperature sensor (for example, a thermocouple). Next, the object to be leveled 3 is placed on the placing platform 2. The object to be leveled 3 may be, for example, the object to be leveled 3 in FIG. 13, the object to be leveled 3 a as shown in FIG. 14, the object to be leveled 3 b as shown in FIG. 15, or other forms. The warping of the object to be leveled 3 is warping of a smiling face, and the warping degree W is 400 μm to 800 μm. It can be understood that the warpage of the object to be leveled 3 may also be a crying face warpage, and the warpage degree W may be less than 400 μm or more than 800 μm. If the object to be leveled 3 is already in a high temperature state before being placed on the placement platform 2, for example, about 100 ° C, 200 ° C, or 220 ° C, the heater of the first temperature controller 41 may place the The platform 2 is preheated to the same temperature as the object to be leveled 3, for example, about 100 ° C, 200 ° C, or 220 ° C. If the object to be leveled 3 is at room temperature before being placed on the placing platform 2, this preheating step is not required. Referring to FIG. 17, a lower surface 32 of one of the objects to be leveled 3 is sucked by the placement platform 2. In an embodiment, the first gas controller 42 is activated to pass a gas 71 between the adsorption hole 23 and the lower surface 32 of the object to be leveled 3 through the adsorption hole 23 and the first gas. The passage 24 and the first air inlet / exhaust hole 25 are evacuated or absorbed to the first gas controller 42 so that the adsorption hole 23 can suck the bottom surface 32 of the to-be-leveled object 3 substantially completely and simultaneously. The entire surface (that is, the lower surface 32 of the object to be leveled 3 may be substantially completely abutted against the first surface 21 (the receiving surface) of the placing platform 2). In one embodiment, the first gas controller 42 can be evacuated, so that the adsorption hole 23 can provide a vacuum suction force to increase the adsorption effect. In the above process, the heater of the first temperature controller 41 can be activated at the same time to heat the placement platform 2 to gradually increase the temperature of the object to be leveled 3 to a higher temperature, for example, about 220 ℃ (which can be measured by the temperature sensor) makes the to-be-leveled object 3 slightly simplistic to facilitate leveling operations and increase the leveling effect. That is, in this embodiment, the object to be leveled 3 is heated through the placement platform 2. It can be understood that the heating temperature required for the leveling object 3 will be different. Referring to FIG. 18, at least one non-contact downward thrust is provided to the object to be leveled 3. In an embodiment, the non-contact downward pushing force is a blowing force, which is provided by a deformation suppressor (for example, a blowing device 5) and is applied to one of the objects to be leveled 3 Surface 31. The deformation suppressor (for example, the air blowing device 5) has a substantially rectangular disk shape, which is located above the placing platform 2 and the object to be leveled 3, and is used to suppress the object to be leveled 3. Warping or deformation. The deformation suppressor (for example, the blowing device 5) has a first surface 51, a second surface 52 (blowing surface), at least one blowing hole 53, at least one second gas channel 54, and at least one second inlet气 / exhaust hole 55. The second surface 52 is opposite to the first surface 51. In an embodiment, the second surface 52 is substantially parallel to the first surface 51, and the second surface 52 (the air blowing surface) faces and is parallel to the first surface 21 (the receiving surface of the placing platform 2) ). The air blowing hole 53 is opened in the second surface 52 (air blowing surface) of the deformation suppressor (for example, the air blowing device 5) for blowing out at least one gas 72. In particular, the blow hole 53 is used to blow the gas 72 toward the first surface 21 (the receiving surface) of the placing platform 2, and the gas 72 is blown to an upper surface 31 of the object to be leveled 3 To level the object to be leveled 3. The second gas passage 54 is a gas passage inside the deformation suppressor (for example, the blowing device 5), and can be used for gas flow. The second gas passage 54 is in communication with the at least one blow hole 53. In one embodiment, the deformation suppressor (for example, the blowing device 5) has a plurality of blowing holes 53, and the blowing holes 53 are in communication with the second gas passage 54. The second air inlet / exhaust hole 55 is opened in the first surface 51 of the deformation suppressor (for example, the air blowing device 5) for the gas to flow. The second gas passage 54 is in communication with the at least second intake / exhaust hole 55. The deformation suppressor (for example: an air blowing device 5) is connected to a second gas controller 62 (for example: an air pump). The second gas controller 62 is connected to the second air inlet / exhaust hole 55 so as to communicate with the second gas passage 54 to provide a blowing force to the gas in the second gas passage 54. Therefore, the second gas controller 62 can blow the gas 72 below the air blowing hole 53 through the second air inlet / exhaust hole 55, the second gas passage 54 and the air blowing hole 53. That is, the second gas controller 62 can provide a pressurized gas to the second gas passage 54 and the blow hole 53 and blow to a top surface 31 of the object to be leveled 3 to suppress or level it. The to-be-leveled object 3. The deformation suppressor (for example, an air blowing device 5) is further connected to a second temperature controller 61. The second temperature controller 61 is used to control the temperature of the gas 72 of the blow hole 53 so that the temperature of the gas 72 blown from the blow hole 53 can be close to or approximately equal to the temperature of the object 3 to be leveled. As shown in FIG. 18, the second temperature controller 61 is located outside the deformation suppressor (for example, the blowing device 5), and is located between the deformation suppressor (for example, the blowing device 5) and the first The passage between the two gas controllers 62 is used to control the temperature of the gas blown by the second gas controller 62 to the second air inlet / exhaust hole 55. In one embodiment, the second temperature controller 61 includes a heater, a cooler, and a temperature sensor (for example, a thermocouple). In the above-mentioned operation process, the heater of the first temperature controller 41 can heat the object to be leveled 3 to a higher temperature, for example, about 220 ° C., so that the object to be leveled 3 is slightly simplistic. Facilitate leveling operations and increase the leveling effect. At this time, the second temperature controller 61 also heats the gas 72 of the blow hole 53 to a higher temperature, for example, about 220 ° C, so that the temperature of the gas 72 blown from the blow hole 53 can be close to or approximately equal to the The temperature of the object 3 to be leveled. Thereby, the temperature of the first surface 31 and the second surface 32 of the object to be leveled 3 can be ensured to be the same, and damage caused by the temperature difference between the two sides can be avoided. Specifically, when the object to be leveled 3 is still in a high temperature state, if the first surface 31 of the object to be leveled 3 is directly sprayed with a low-temperature gas, the structure of the first surface 31 may be severely contracted. Warpage occurs, and if the spraying force applied at this time is not controlled, the surface of the object to be leveled 3 will be cracked. In one embodiment, the thickness of the object to be leveled 3 is about 150 μm to 850 μm, and its size (diameter or maximum width) is about 200 mm to about 300 mm, and the relevant parameters are set as follows. First, the distance P between the deformation suppressor (for example, the air blowing device 5) and the object to be leveled 3 is less than or equal to 5 mm. If the distance P between the deformation suppressor (for example: the blowing device 5) and the object to be leveled 3 is too large, for example: greater than 5 mm, the blowing force provided by the deformation suppressor (for example: the blowing device 5) May not be enough to level the object to be leveled3. Secondly, the blowing force provided by each blowing hole 53 is 1.5kg / cm ² Up to 2.0kg / cm ² . If the blowing force is too small (for example: less than 1.5kg / cm ² ), The warpage of the object to be leveled 3 cannot be effectively suppressed; if the blowing force is too large (for example: more than 2.0kg / cm ² ), It is easy to cause damage to the surface of the object to be leveled 3 or to blow off components on the surface of the object to be leveled 3. In addition, the total amount of the gas 72 provided by all the blow holes 53 is 300 L / min or more. If the total amount of the gas 72 is too small (for example, less than 300 L / min), the warpage of the object to be leveled 3 cannot be effectively suppressed. Then, when the leveling operation is completed, the cooler of the first temperature controller 41 can cool the object to be leveled 3 to a lower temperature through the placement platform 2, for example, about 70 ° C. (which can be (Measured by a temperature sensor) or below 70 ° C. During this process, the second temperature controller 61 also controls the gas 72 of the blow hole 53 to gradually decrease to a lower temperature, for example, about 70 ° C or below , So that the temperature of the gas 72 blown from the blow hole 53 can still be close to or approximately equal to the temperature of the object 3 to be leveled. At this time, the to-be-leveled object 3 should not warp any more, so the to-be-leveled object 3 can be removed from the placement platform 2 and allowed to cool to room temperature by itself, and then the subsequent manufacturing process is continued. However, it can be understood that the first temperature controller 41 and the second temperature controller 61 may not include the cooler, that is, the leveling object 3 may be allowed to move from the higher temperature (eg, about 220). ℃) Cool to room temperature on its own. Referring to FIG. 19, the deformation suppressor (for example, the air blowing device 5) is removed, and then the first gas controller 42 is activated to pass the gas 73 through the first intake / exhaust hole 25, the first The gas channel 24 and the adsorption hole 23 are blown above the adsorption hole 23, so that the lower surface 32 of the object to be leveled 3 can leave the entire surface of the first surface 21 (the receiving surface) of the placing platform 2 at the same time. Avoid deformation of the object to be leveled 3. In the embodiment of the placing platform 2c shown in FIG. 11 and FIG. 12, the top abutment 28 can assist in pushing the object 3 to be leveled off the first surface 21 (the receiving surface) of the placing platform 2c. Unless otherwise specified, such as "above", "below", "up", "left", "right", "down", "top", "bottom", "vertical", "horizontal", "side" , "Higher", "lower", "upper", "upper", "lower" and other spatial descriptions indicate the orientation shown in the figure. It should be understood that the space description used in this article is for the purpose of illustration only, and the actual implementation of the structure described in this article can be spatially configured in any orientation or manner. The limitation is that the advantages of the embodiments of the new model are not Configuration is biased. As used herein, the terms "substantially", "substantially", "substantially" and "about" are used to describe and consider small variations. When used in conjunction with an event or situation, the term can refer to a situation in which the event or situation occurs explicitly and a situation in which the event or situation closely resembles. For example, when used in conjunction with numerical values, these terms may refer to a range of variation that is less than or equal to ± 10% of the value, such as less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, Less than or equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%. For example, if the difference between two values is less than or equal to ± 10% of the average of the values (such as less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, less than Or equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%), the two values can be considered to be "substantially" the same. The term "substantially coplanar" may refer to two of several micrometers (μm) along the same plane (such as within 40 μm, 30 μm, 20 μm, 10 μm, or 1 μm along the same plane). Surface. In addition, quantities, ratios, and other numerical values are sometimes presented in a range format herein. It should be understood that such range formats are used for convenience and brevity, and should be interpreted flexibly to include not only values explicitly designated as range limits, but also all individual values or subranges encompassed within that range, as Explicitly specify each value and subrange in general. In the description of some embodiments, providing one of the components "on" another component may cover the situation where the former component is directly on the latter component (e.g., in physical contact with the latter component) and one or more A condition in which an intervening component is located between a previous component and a subsequent component. Although the invention has been described and illustrated with reference to specific embodiments thereof, such descriptions and illustrations do not limit the invention. Those skilled in the art should understand that various changes can be made and equivalents can be substituted without departing from the true spirit and scope of the new model as defined by the scope of the attached patent application. Instructions need not be drawn to scale. Due to manufacturing procedures and tolerances, there may be a difference between the artistic reproduction in this new model and the actual equipment. There may be other embodiments of the present invention that are not explicitly described. This specification and drawings are to be regarded as illustrative rather than restrictive. Modifications can be made to adapt specific situations, materials, material compositions, methods, or processes to the objectives, spirit, and scope of the new model. All such modifications are intended to be within the scope of the patentable applications attached hereto. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it should be understood that such operations may be combined, subdivided, or reordered to form equivalents without departing from the teachings of the new model. method. Therefore, unless explicitly indicated herein, the order and grouping of operations is not a limitation of the new model.

D₁‧‧‧吸附孔之孔徑
D₂‧‧‧吹氣孔之孔徑
W‧‧‧翹曲程度
P‧‧‧間距
1‧‧‧整平裝置
1a‧‧‧整平裝置
2‧‧‧放置平台
2a‧‧‧放置平台
2b‧‧‧放置平台
2c‧‧‧放置平台
3‧‧‧待整平物
3a‧‧‧待整平物
3b‧‧‧待整平物
5‧‧‧吹氣裝置
5b‧‧‧吹氣裝置
21‧‧‧放置平台之第一表面
22‧‧‧放置平台之第二表面
23‧‧‧吸附孔
23a‧‧‧吸附孔
23b‧‧‧吸附孔
24‧‧‧第一氣體通道
25‧‧‧第一進氣/排氣孔
26‧‧‧連通孔洞
27‧‧‧梢孔
28‧‧‧頂抵梢
30‧‧‧晶圓
29‧‧‧第一載體
31‧‧‧待整平物之上表面
32‧‧‧待整平物之下表面
33‧‧‧第二載體
34‧‧‧離型膜
35‧‧‧黏性膜
36‧‧‧電性元件
37‧‧‧封裝膠材
41‧‧‧第一溫度控制器
42‧‧‧第一氣體控制器
51‧‧‧形變壓制器之第一表面
52‧‧‧形變壓制器之第二表面
53‧‧‧吹氣孔
53a‧‧‧吹氣孔
53b‧‧‧吹氣孔
54‧‧‧第二氣體通道
55‧‧‧第二進氣/排氣孔
56‧‧‧連通孔洞
61‧‧‧第二溫度控制器
62‧‧‧第二氣體控制器
71‧‧‧氣體
72‧‧‧氣體
73‧‧‧氣體
291‧‧‧黏膠層
301‧‧‧晶圓之主動面
302‧‧‧晶圓之背面
303‧‧‧凸塊
304‧‧‧銲料
361‧‧‧電性元件之上表面
371‧‧‧封裝膠材之上表面D ₁ ‧‧‧ Pore size
D ₂ ‧‧‧ Aperture
W‧‧‧Warpage
P‧‧‧Pitch
1‧‧‧leveling device
1a‧‧‧leveling device
2‧‧‧ Place the platform
2a‧‧‧ Place Platform
2b‧‧‧Platform
2c‧‧‧Platform
3‧‧‧ to be leveled
3a‧‧‧To be leveled
3b‧‧‧ to be leveled
5‧‧‧ blowing device
5b‧‧‧blowing device
21‧‧‧ Place the first surface of the platform
22‧‧‧ the second surface of the platform
23‧‧‧ adsorption hole
23a‧‧‧ adsorption hole
23b‧‧‧ adsorption hole
24‧‧‧First gas channel
25‧‧‧First intake / exhaust hole
26‧‧‧Connecting holes
27‧‧‧ tip hole
28‧‧‧top
30‧‧‧ wafer
29‧‧‧ the first carrier
31‧‧‧ Top surface to be leveled
32‧‧‧Under surface to be leveled
33‧‧‧Second carrier
34‧‧‧ release film
35‧‧‧ adhesive film
36‧‧‧Electrical components
37‧‧‧sealing plastic
41‧‧‧The first temperature controller
42‧‧‧The first gas controller
51‧‧‧ the first surface of the deformation suppressor
52‧‧‧Second Surface of Deformer
53‧‧‧ Blowhole
53a‧‧‧blow hole
53b‧‧‧blow hole
54‧‧‧Second gas channel
55‧‧‧Second air inlet / exhaust hole
56‧‧‧Connecting holes
61‧‧‧Second Temperature Controller
62‧‧‧Second Gas Controller
71‧‧‧gas
72‧‧‧gas
73‧‧‧gas
291‧‧‧Adhesive layer
Active side of 301‧‧‧wafer
302‧‧‧ the back of the wafer
303‧‧‧ bump
304‧‧‧solder
361‧‧‧ upper surface of electrical components
371‧‧‧The upper surface of the sealing material

圖1描繪根據本新型之一些實施例的整平裝置之實例的局部立體示意圖，其中該整平裝置係為打開之狀態。圖2描繪根據本新型之一些實施例的整平裝置之實例的剖視示意圖，其中該整平裝置係為閉合之狀態，且該整平裝置承載一待整平物。圖3描繪根據圖1及圖2的整平裝置之放置平台的正視示意圖。圖4描繪根據圖1及圖2的整平裝置之形變壓制器的正視示意圖。圖5描繪根據本新型之一些實施例的整平裝置之實例的剖視示意圖。圖6描繪根據本新型之一些實施例的放置平台的正視示意圖。圖7描繪圖6的放置平台的剖面示意圖。圖8描繪根據本新型之一些實施例的形變壓制器的正視示意圖。圖9描繪根據本新型之一些實施例的放置平台的正視示意圖。圖10描繪根據本新型之一些實施例的形變壓制器的正視示意圖。圖11描繪根據本新型之一些實施例的放置平台的正視示意圖。圖12描繪圖11的放置平台的剖面示意圖。圖13描繪根據本新型之一些實施例的待整平物的局部剖面示意圖。圖14描繪根據本新型之一些實施例的待整平物的局部剖面示意圖。圖15描繪根據本新型之一些實施例的待整平物的局部剖面示意圖。圖16至圖19描繪根據本新型之一些實施例的整平一待整平物之方法。FIG. 1 depicts a partial perspective view of an example of a leveling device according to some embodiments of the present invention, wherein the leveling device is in an opened state. FIG. 2 depicts a schematic cross-sectional view of an example of a leveling device according to some embodiments of the present invention. The leveling device is in a closed state, and the leveling device carries an object to be leveled. FIG. 3 depicts a schematic front view of a placement platform of the leveling device according to FIGS. 1 and 2. FIG. 4 is a schematic front view of a deformation suppressor of the leveling device according to FIGS. 1 and 2. FIG. 5 depicts a schematic cross-sectional view of an example of a leveling device according to some embodiments of the present invention. FIG. 6 depicts a schematic front view of a placement platform according to some embodiments of the present invention. FIG. 7 depicts a schematic cross-sectional view of the placement platform of FIG. 6. FIG. 8 depicts a schematic front view of a deformation suppressor according to some embodiments of the present invention. FIG. 9 depicts a schematic front view of a placement platform according to some embodiments of the present invention. FIG. 10 depicts a schematic front view of a deformation suppressor according to some embodiments of the present invention. 11 depicts a schematic front view of a placement platform according to some embodiments of the present invention. FIG. 12 depicts a schematic cross-sectional view of the placement platform of FIG. 11. FIG. 13 is a schematic partial cross-sectional view of an object to be leveled according to some embodiments of the present invention. FIG. 14 is a schematic partial cross-sectional view of an object to be leveled according to some embodiments of the present invention. FIG. 15 is a schematic partial cross-sectional view of an object to be leveled according to some embodiments of the present invention. 16 to 19 depict a method of leveling a to-be-leveled object according to some embodiments of the present invention.

1‧‧‧整平裝置 1‧‧‧leveling device

2‧‧‧放置平台 2‧‧‧ Place the platform

5‧‧‧吹氣裝置 5‧‧‧ blowing device

21‧‧‧放置平台之第一表面 21‧‧‧ Place the first surface of the platform

23‧‧‧吸附孔 23‧‧‧ adsorption hole

52‧‧‧形變壓制器之第二表面 52‧‧‧Second Surface of Deformer

53‧‧‧吹氣孔 53‧‧‧ Blowhole

Claims

A leveling device includes: a placing platform having a receiving surface; a first temperature controller for controlling the temperature of the receiving surface of the placing platform; and an air blowing device having a blowing surface for blowing air The surface faces the receiving surface of the placing platform, and is used to blow out at least one gas toward the receiving surface of the placing platform.

The leveling device according to item 1 of the scope of the patent application, wherein the placing platform has at least one suction hole, which is opened on the receiving surface of the placing platform, and is used to suck a lower surface of an object to be leveled. The at least one gas is blown out to an upper surface of one of the objects to be leveled.

The leveling device according to item 2 of the scope of patent application, wherein the placing platform further has at least one first gas channel, and the at least one first gas channel is in communication with the at least one adsorption hole.

The leveling device described in item 3 of the scope of patent application, further includes a first gas controller, which communicates with the first gas channel, and is used to provide a suction force or a blowing force to the gas in the first gas channel. .

The leveling device according to item 4 of the scope of patent application, wherein the first gas controller is an air pump.

The leveling device according to item 1 of the scope of the patent application, wherein the air blowing device has at least one air blowing hole, which is opened on the air blowing surface of the air blowing device for blowing out the at least one gas.

The leveling device according to item 6 of the scope of the patent application, wherein the blowing device further has at least one second gas channel, and the at least one second gas channel is in communication with the at least one blowing hole.

The leveling device described in item 7 of the scope of the patent application, further includes a second gas controller, which is in communication with the second gas passage for providing a pressurized gas to the second gas passage.

The leveling device according to item 8 of the scope of patent application, wherein the second gas controller is an air pump.

The leveling device described in item 6 of the scope of the patent application, further includes a second temperature controller for controlling the temperature of the gas in the blow hole.

The leveling device according to item 6 of the scope of the patent application, wherein the blowing device has a plurality of blowing holes, and the blowing holes are radially distributed from a center of the blowing device to a periphery of the blowing device.

The leveling device according to item 6 of the scope of the patent application, wherein the blowing device has a plurality of blowing holes, and the blowing holes are evenly distributed on the blowing surface.

The leveling device according to item 6 of the scope of patent application, wherein the diameter of the blow hole is less than or equal to 2 mm.

The leveling device according to item 1 of the scope of the patent application, wherein the blowing device has a plurality of blowing holes, the placement platform has a plurality of suction holes, and the position of each blowing hole corresponds to the position of each suction hole.

The leveling device described in item 1 of the scope of the patent application, wherein the air blowing surface of the air blowing device is parallel to the receiving surface of the placing platform.

The leveling device according to item 1 of the scope of the patent application, wherein the air blowing device can be raised and lowered relative to the placement platform.

The leveling device according to item 1 of the scope of patent application, wherein the first temperature controller is thermally connected to the placing platform.

The leveling device according to item 1 of the patent application scope, wherein the first temperature controller is located in the placing platform.