TWI729447B - 用於寬範圍溫度控制的加熱器基座組件 - Google Patents

用於寬範圍溫度控制的加熱器基座組件 Download PDF

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Publication number
TWI729447B
TWI729447B TW108127817A TW108127817A TWI729447B TW I729447 B TWI729447 B TW I729447B TW 108127817 A TW108127817 A TW 108127817A TW 108127817 A TW108127817 A TW 108127817A TW I729447 B TWI729447 B TW I729447B
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TW
Taiwan
Prior art keywords
shaft
base assembly
assembly
base
support member
Prior art date
Application number
TW108127817A
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English (en)
Chinese (zh)
Other versions
TW202015169A (zh
Inventor
庫許克 阿拉亞里
阿吉特 波拉克里斯那
桑傑夫 巴魯札
阿米古莫 班莎
馬修詹姆士 布薛
君卡洛斯 羅莎亞凡利斯
史瓦米奈森Ｔ 史林尼法森
特賈斯 烏拉維
建華 周
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202015169A publication Critical patent/TW202015169A/zh
Application granted granted Critical
Publication of TWI729447B publication Critical patent/TWI729447B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW108127817A 2016-09-22 2017-08-28 用於寬範圍溫度控制的加熱器基座組件 TWI729447B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662398310P 2016-09-22 2016-09-22
US62/398,310 2016-09-22

Publications (2)

Publication Number Publication Date
TW202015169A TW202015169A (zh) 2020-04-16
TWI729447B true TWI729447B (zh) 2021-06-01

Family

ID=61621254

Family Applications (2)

Application Number Title Priority Date Filing Date
TW108127817A TWI729447B (zh) 2016-09-22 2017-08-28 用於寬範圍溫度控制的加熱器基座組件
TW106129088A TWI671851B (zh) 2016-09-22 2017-08-28 用於寬範圍溫度控制的加熱器基座組件

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106129088A TWI671851B (zh) 2016-09-22 2017-08-28 用於寬範圍溫度控制的加熱器基座組件

Country Status (6)

Country Link
US (1) US10910238B2 (https=)
JP (1) JP7073349B2 (https=)
KR (1) KR102236934B1 (https=)
CN (1) CN109716497B (https=)
TW (2) TWI729447B (https=)
WO (1) WO2018057369A1 (https=)

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CN106607320B (zh) * 2016-12-22 2019-10-01 武汉华星光电技术有限公司 适用于柔性基板的热真空干燥装置
KR102460313B1 (ko) * 2018-12-13 2022-10-28 주식회사 원익아이피에스 기판 처리 장치의 서셉터 및 기판 처리 장치
TWI811307B (zh) * 2019-03-12 2023-08-11 鴻創應用科技有限公司 陶瓷電路複合結構及其製造方法
US12420314B2 (en) * 2019-10-18 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor cleaning apparatus and method
US11515176B2 (en) * 2020-04-14 2022-11-29 Applied Materials, Inc. Thermally controlled lid stack components
US20220028710A1 (en) * 2020-07-21 2022-01-27 Applied Materials, Inc. Distribution components for semiconductor processing systems
US12020957B2 (en) * 2020-08-31 2024-06-25 Applied Materials, Inc. Heater assembly with process gap control for batch processing chambers
JP7490508B2 (ja) * 2020-09-09 2024-05-27 日本電子株式会社 三次元積層造形装置
US12563991B2 (en) * 2021-08-25 2026-02-24 Applied Materials, Inc. Thermal choke plate
TWI890199B (zh) * 2022-12-02 2025-07-11 日商鎧俠股份有限公司 半導體裝置冷卻裝置

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US20070169703A1 (en) * 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
TW201016882A (en) * 2008-06-24 2010-05-01 Applied Materials Inc Pedestal heater for low temperature PECVD application
TW201125069A (en) * 2009-12-18 2011-07-16 Applied Materials Inc Multifunctional heater/chiller pedestal for wide range wafer temperature control

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EP1132956A4 (en) * 1998-10-29 2005-04-27 Tokyo Electron Ltd VACUUM GENERATOR UNIT
JP2003060973A (ja) * 2001-08-21 2003-02-28 Mitsubishi Heavy Ind Ltd 監視カメラ誘導用送信器、監視カメラ、及び、監視システム
WO2003060973A1 (en) * 2002-01-10 2003-07-24 Tokyo Electron Limited Processing device
US7718930B2 (en) * 2003-04-07 2010-05-18 Tokyo Electron Limited Loading table and heat treating apparatus having the loading table
JP4761774B2 (ja) * 2005-01-12 2011-08-31 東京エレクトロン株式会社 温度／厚さ測定装置，温度／厚さ測定方法，温度／厚さ測定システム，制御システム，制御方法
CN100358098C (zh) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
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JP6005946B2 (ja) * 2012-02-07 2016-10-12 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
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TW201016882A (en) * 2008-06-24 2010-05-01 Applied Materials Inc Pedestal heater for low temperature PECVD application
TW201125069A (en) * 2009-12-18 2011-07-16 Applied Materials Inc Multifunctional heater/chiller pedestal for wide range wafer temperature control

Also Published As

Publication number Publication date
KR102236934B1 (ko) 2021-04-05
US20180082866A1 (en) 2018-03-22
JP2019533306A (ja) 2019-11-14
WO2018057369A1 (en) 2018-03-29
JP7073349B2 (ja) 2022-05-23
TW202015169A (zh) 2020-04-16
CN109716497A (zh) 2019-05-03
CN109716497B (zh) 2023-09-26
TWI671851B (zh) 2019-09-11
TW201814823A (zh) 2018-04-16
US10910238B2 (en) 2021-02-02
KR20190043645A (ko) 2019-04-26

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