JP2019533306A - 広範囲にわたる温度制御のためのヒータペデスタルアセンブリ - Google Patents
広範囲にわたる温度制御のためのヒータペデスタルアセンブリ Download PDFInfo
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- JP2019533306A JP2019533306A JP2019515489A JP2019515489A JP2019533306A JP 2019533306 A JP2019533306 A JP 2019533306A JP 2019515489 A JP2019515489 A JP 2019515489A JP 2019515489 A JP2019515489 A JP 2019515489A JP 2019533306 A JP2019533306 A JP 2019533306A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
[0002] 半導体処理は、多くの異なる化学的及び物理的プロセスを含み、これにより微細な集積回路が基板上で形成される。集積回路をなす材料の層は、化学気相堆積、物理気相堆積、エピタキシャル成長などを含む処理によって作成される。材料の層には、フォトレジストマスク並びに、湿式又は乾式エッチング技法を使用して、パターン形成されるものもある。集積回路を形成するために用いられる基板は、ケイ素、ガリウムヒ素、リン化インジウム、ガラス、又は他の適切な材料であってよい。
Claims (14)
- 半導体処理チャンバのためのペデスタルアセンブリであって、
誘電体材料を含み、基板を受容するための支持体面を有する基板支持体と、
前記基板支持体内に封入された抵抗加熱器と、
中空コアを有し、前記中空コアの第1の端部で前記基板支持体の支持体部材に連結されたシャフトと、
前記支持体部材と前記中空コアの前記第1の端部との間の界面に配置された、約4.0W/mKの熱伝導率を有する熱伝導材料と、
を備える、ペデスタルアセンブリ。 - 前記シャフトは、前記中空コアを取り囲み、内部冷却経路を介して前記ペデスタルから熱を取り除くため、前記シャフトの内部に配置された冷却チャネルアセンブリを備える、請求項1に記載のペデスタルアセンブリ。
- 前記基板支持体は、発熱体と前記冷却チャネルアセンブリとの間に配置された熱遮断部を有する、請求項2に記載のペデスタルアセンブリ。
- 前記熱遮断部は、
上方壁と、
向かい合う下方壁と、
前記熱遮断部を取り囲む周壁であって、円形の周壁と、
を備える、請求項3に記載のペデスタルアセンブリ。 - 前記熱遮断部は、約7.6cmから約10.2cmの間の直径と、約1cmから約1.3cmの間の高さを有する、請求項4に記載のペデスタルアセンブリ。
- 前記支持体部材は、前記界面に隣接するその外縁に形成された複数の凹部を含む、請求項1に記載のペデスタルアセンブリ。
- 半導体処理チャンバのためのペデスタルアセンブリであって、
誘電体材料を含み、基板を受容するための支持体面を有する基板支持体と、
前記基板支持体内に封入された抵抗加熱器と、
中空コアを有し、前記中空コアの第1の端部で前記基板支持体の支持体部材に連結されたシャフトと、
発熱体と冷却チャネルアセンブリとの間に配置された空隙を含む熱遮断部と、
を備えるペデスタルアセンブリ。 - 前記熱遮断部は、
上方壁と、
向かい合う下方壁と、
前記熱遮断部を取り囲む周壁と、
を備える、請求項8に記載のペデスタルアセンブリ。 - 前記周壁は円形である、請求項9に記載のペデスタルアセンブリ。
- 前記熱遮断部は、約7.6cmから約10.2cmの間の直径と、約1cmから約1.3cmの間の高さを有する、請求項8に記載のペデスタルアセンブリ。
- 前記支持体部材は、界面に隣接するその外縁に形成された複数の凹部を含む、請求項8に記載のペデスタルアセンブリ。
- 前記支持体部材と前記中空コアの前記第1の端部との間の界面に配置された熱伝導材料を更に備える、請求項8に記載のペデスタルアセンブリ。
- 前記熱伝導材料は、約4.0W/mKの熱伝導率を有する、請求項13に記載のペデスタルアセンブリ。
- 半導体処理チャンバのためのペデスタルアセンブリであって、
誘電体材料を含み基板を受容するための支持体面を有する基板支持体と、
前記基板支持体内に封入された抵抗加熱器と、
中空コアを有し前記中空コアの第1の端部で前記基板支持体の支持体部材に連結されたシャフトと、
発熱体と冷却チャネルアセンブリとの間に配置された空隙を含む熱遮断部と、
前記支持体部材と前記中空コアの前記第1の端部との界面に配置された熱伝導材料と、
を備える、ペデスタルアセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662398310P | 2016-09-22 | 2016-09-22 | |
US62/398,310 | 2016-09-22 | ||
PCT/US2017/051373 WO2018057369A1 (en) | 2016-09-22 | 2017-09-13 | Heater pedestal assembly for wide range temperature control |
Publications (3)
Publication Number | Publication Date |
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JP2019533306A true JP2019533306A (ja) | 2019-11-14 |
JP2019533306A5 JP2019533306A5 (ja) | 2020-10-22 |
JP7073349B2 JP7073349B2 (ja) | 2022-05-23 |
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JP2019515489A Active JP7073349B2 (ja) | 2016-09-22 | 2017-09-13 | 広範囲にわたる温度制御のためのヒータペデスタルアセンブリ |
Country Status (6)
Country | Link |
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US (1) | US10910238B2 (ja) |
JP (1) | JP7073349B2 (ja) |
KR (1) | KR102236934B1 (ja) |
CN (1) | CN109716497B (ja) |
TW (2) | TWI729447B (ja) |
WO (1) | WO2018057369A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7490508B2 (ja) | 2020-09-09 | 2024-05-27 | 日本電子株式会社 | 三次元積層造形装置 |
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CN106607320B (zh) * | 2016-12-22 | 2019-10-01 | 武汉华星光电技术有限公司 | 适用于柔性基板的热真空干燥装置 |
KR102460313B1 (ko) * | 2018-12-13 | 2022-10-28 | 주식회사 원익아이피에스 | 기판 처리 장치의 서셉터 및 기판 처리 장치 |
TWI811307B (zh) * | 2019-03-12 | 2023-08-11 | 鴻創應用科技有限公司 | 陶瓷電路複合結構及其製造方法 |
US20210114067A1 (en) * | 2019-10-18 | 2021-04-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor cleaning apparatus and method |
US11515176B2 (en) * | 2020-04-14 | 2022-11-29 | Applied Materials, Inc. | Thermally controlled lid stack components |
US12020957B2 (en) | 2020-08-31 | 2024-06-25 | Applied Materials, Inc. | Heater assembly with process gap control for batch processing chambers |
US20230069317A1 (en) * | 2021-08-25 | 2023-03-02 | Applied Materials, Inc. | Thermal choke plate |
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WO2015105647A1 (en) * | 2014-01-07 | 2015-07-16 | Applied Materials, Inc. | Pecvd ceramic heater with wide range of operating temperatures |
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- 2017-08-28 TW TW108127817A patent/TWI729447B/zh active
- 2017-08-28 TW TW106129088A patent/TWI671851B/zh active
- 2017-09-13 JP JP2019515489A patent/JP7073349B2/ja active Active
- 2017-09-13 CN CN201780057399.9A patent/CN109716497B/zh active Active
- 2017-09-13 WO PCT/US2017/051373 patent/WO2018057369A1/en active Application Filing
- 2017-09-13 US US15/703,666 patent/US10910238B2/en active Active
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Patent Citations (2)
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JP2013514669A (ja) * | 2009-12-18 | 2013-04-25 | アプライド マテリアルズ インコーポレイテッド | 広範囲ウエハ温度制御のための多機能ヒータ/冷却装置ペデスタル |
WO2015105647A1 (en) * | 2014-01-07 | 2015-07-16 | Applied Materials, Inc. | Pecvd ceramic heater with wide range of operating temperatures |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7490508B2 (ja) | 2020-09-09 | 2024-05-27 | 日本電子株式会社 | 三次元積層造形装置 |
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US20180082866A1 (en) | 2018-03-22 |
KR102236934B1 (ko) | 2021-04-05 |
JP7073349B2 (ja) | 2022-05-23 |
TWI671851B (zh) | 2019-09-11 |
TW201814823A (zh) | 2018-04-16 |
TW202015169A (zh) | 2020-04-16 |
US10910238B2 (en) | 2021-02-02 |
TWI729447B (zh) | 2021-06-01 |
CN109716497B (zh) | 2023-09-26 |
WO2018057369A1 (en) | 2018-03-29 |
KR20190043645A (ko) | 2019-04-26 |
CN109716497A (zh) | 2019-05-03 |
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