CN109716497B - 用于宽范围温度控制的加热器基座组件 - Google Patents

用于宽范围温度控制的加热器基座组件 Download PDF

Info

Publication number
CN109716497B
CN109716497B CN201780057399.9A CN201780057399A CN109716497B CN 109716497 B CN109716497 B CN 109716497B CN 201780057399 A CN201780057399 A CN 201780057399A CN 109716497 B CN109716497 B CN 109716497B
Authority
CN
China
Prior art keywords
support member
shaft
base assembly
substrate
thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201780057399.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN109716497A (zh
Inventor
K·阿拉亚瓦里
A·巴拉克里希纳
S·巴录佳
A·K·班塞尔
M·J·布舍
J·C·罗查-阿尔瓦雷斯
S·T·斯里尼瓦桑
T·乌拉维
周建华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN109716497A publication Critical patent/CN109716497A/zh
Application granted granted Critical
Publication of CN109716497B publication Critical patent/CN109716497B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201780057399.9A 2016-09-22 2017-09-13 用于宽范围温度控制的加热器基座组件 Active CN109716497B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662398310P 2016-09-22 2016-09-22
US62/398,310 2016-09-22
PCT/US2017/051373 WO2018057369A1 (en) 2016-09-22 2017-09-13 Heater pedestal assembly for wide range temperature control

Publications (2)

Publication Number Publication Date
CN109716497A CN109716497A (zh) 2019-05-03
CN109716497B true CN109716497B (zh) 2023-09-26

Family

ID=61621254

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780057399.9A Active CN109716497B (zh) 2016-09-22 2017-09-13 用于宽范围温度控制的加热器基座组件

Country Status (6)

Country Link
US (1) US10910238B2 (https=)
JP (1) JP7073349B2 (https=)
KR (1) KR102236934B1 (https=)
CN (1) CN109716497B (https=)
TW (2) TWI729447B (https=)
WO (1) WO2018057369A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106607320B (zh) * 2016-12-22 2019-10-01 武汉华星光电技术有限公司 适用于柔性基板的热真空干燥装置
KR102460313B1 (ko) * 2018-12-13 2022-10-28 주식회사 원익아이피에스 기판 처리 장치의 서셉터 및 기판 처리 장치
TWI811307B (zh) * 2019-03-12 2023-08-11 鴻創應用科技有限公司 陶瓷電路複合結構及其製造方法
US12420314B2 (en) * 2019-10-18 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor cleaning apparatus and method
US11515176B2 (en) * 2020-04-14 2022-11-29 Applied Materials, Inc. Thermally controlled lid stack components
US20220028710A1 (en) * 2020-07-21 2022-01-27 Applied Materials, Inc. Distribution components for semiconductor processing systems
US12020957B2 (en) * 2020-08-31 2024-06-25 Applied Materials, Inc. Heater assembly with process gap control for batch processing chambers
JP7490508B2 (ja) * 2020-09-09 2024-05-27 日本電子株式会社 三次元積層造形装置
US12563991B2 (en) * 2021-08-25 2026-02-24 Applied Materials, Inc. Thermal choke plate
TWI890199B (zh) * 2022-12-02 2025-07-11 日商鎧俠股份有限公司 半導體裝置冷卻裝置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11265931A (ja) * 1997-10-30 1999-09-28 Tokyo Electron Ltd 真空処理装置
JPWO2003060973A1 (ja) * 2002-01-10 2005-05-19 東京エレクトロン株式会社 処理装置
JP2006194679A (ja) * 2005-01-12 2006-07-27 Tokyo Electron Ltd 温度/厚さ測定装置,温度/厚さ測定方法,温度/厚さ測定システム,制御システム,制御方法
CN102844854A (zh) * 2009-12-18 2012-12-26 应用材料公司 宽范围晶圆温度控制的多功能加热器/冷却器基座
JP2013162010A (ja) * 2012-02-07 2013-08-19 Dainippon Screen Mfg Co Ltd 熱処理装置
CN104871305A (zh) * 2012-12-14 2015-08-26 应用材料公司 用于基板处理腔室部件的热辐射阻挡层
CN104990175A (zh) * 2015-07-28 2015-10-21 珠海格力电器股份有限公司 一种辐射换热板组件
CN204793612U (zh) * 2015-04-17 2015-11-18 李后杰 用于激光二极管的封装结构

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1132956A4 (en) * 1998-10-29 2005-04-27 Tokyo Electron Ltd VACUUM GENERATOR UNIT
JP2003060973A (ja) * 2001-08-21 2003-02-28 Mitsubishi Heavy Ind Ltd 監視カメラ誘導用送信器、監視カメラ、及び、監視システム
US7718930B2 (en) * 2003-04-07 2010-05-18 Tokyo Electron Limited Loading table and heat treating apparatus having the loading table
CN100358098C (zh) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
US20070169703A1 (en) * 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US7705238B2 (en) * 2006-05-22 2010-04-27 Andrew Llc Coaxial RF device thermally conductive polymer insulator and method of manufacture
WO2010008827A2 (en) * 2008-06-24 2010-01-21 Applied Materials, Inc. Pedestal heater for low temperature pecvd application
US8733280B2 (en) * 2010-12-20 2014-05-27 Intermolecular, Inc. Showerhead for processing chamber
US9089007B2 (en) 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
WO2014116392A1 (en) * 2013-01-25 2014-07-31 Applied Materials, Inc. Electrostatic chuck with concentric cooling base
US9698074B2 (en) 2013-09-16 2017-07-04 Applied Materials, Inc. Heated substrate support with temperature profile control
US20150194326A1 (en) 2014-01-07 2015-07-09 Applied Materials, Inc. Pecvd ceramic heater with wide range of operating temperatures

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11265931A (ja) * 1997-10-30 1999-09-28 Tokyo Electron Ltd 真空処理装置
JPWO2003060973A1 (ja) * 2002-01-10 2005-05-19 東京エレクトロン株式会社 処理装置
JP2006194679A (ja) * 2005-01-12 2006-07-27 Tokyo Electron Ltd 温度/厚さ測定装置,温度/厚さ測定方法,温度/厚さ測定システム,制御システム,制御方法
CN102844854A (zh) * 2009-12-18 2012-12-26 应用材料公司 宽范围晶圆温度控制的多功能加热器/冷却器基座
JP2013162010A (ja) * 2012-02-07 2013-08-19 Dainippon Screen Mfg Co Ltd 熱処理装置
CN104871305A (zh) * 2012-12-14 2015-08-26 应用材料公司 用于基板处理腔室部件的热辐射阻挡层
CN204793612U (zh) * 2015-04-17 2015-11-18 李后杰 用于激光二极管的封装结构
CN104990175A (zh) * 2015-07-28 2015-10-21 珠海格力电器股份有限公司 一种辐射换热板组件

Also Published As

Publication number Publication date
KR102236934B1 (ko) 2021-04-05
US20180082866A1 (en) 2018-03-22
JP2019533306A (ja) 2019-11-14
WO2018057369A1 (en) 2018-03-29
JP7073349B2 (ja) 2022-05-23
TW202015169A (zh) 2020-04-16
CN109716497A (zh) 2019-05-03
TWI671851B (zh) 2019-09-11
TW201814823A (zh) 2018-04-16
TWI729447B (zh) 2021-06-01
US10910238B2 (en) 2021-02-02
KR20190043645A (ko) 2019-04-26

Similar Documents

Publication Publication Date Title
CN109716497B (zh) 用于宽范围温度控制的加热器基座组件
US10811301B2 (en) Dual-zone heater for plasma processing
CN102844854B (zh) 宽范围晶圆温度控制的多功能加热器/冷却器基座
KR101265807B1 (ko) 개선된 반도체 프로세싱 균일성을 위한 열 전송 시스템
US8444926B2 (en) Processing chamber with heated chamber liner
US9947559B2 (en) Thermal management of edge ring in semiconductor processing
CN111684580A (zh) 用于选择性预清洁的快速响应基座组件
CN107460451B (zh) 自居中底座加热器
US20170211185A1 (en) Ceramic showerhead with embedded conductive layers

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TG01 Patent term adjustment
TG01 Patent term adjustment