TWI717394B - 具有熱阻流件之靜電卡盤 - Google Patents

具有熱阻流件之靜電卡盤 Download PDF

Info

Publication number
TWI717394B
TWI717394B TW105131840A TW105131840A TWI717394B TW I717394 B TWI717394 B TW I717394B TW 105131840 A TW105131840 A TW 105131840A TW 105131840 A TW105131840 A TW 105131840A TW I717394 B TWI717394 B TW I717394B
Authority
TW
Taiwan
Prior art keywords
thermal
semiconductor processing
esc
electrostatic chuck
top plate
Prior art date
Application number
TW105131840A
Other languages
English (en)
Chinese (zh)
Other versions
TW201725652A (zh
Inventor
龍茂林
艾立克斯 派特森
垠 吳
關 周
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201725652A publication Critical patent/TW201725652A/zh
Application granted granted Critical
Publication of TWI717394B publication Critical patent/TWI717394B/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW105131840A 2015-10-05 2016-10-03 具有熱阻流件之靜電卡盤 TWI717394B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/875,473 2015-10-05
US14/875,473 US9805963B2 (en) 2015-10-05 2015-10-05 Electrostatic chuck with thermal choke

Publications (2)

Publication Number Publication Date
TW201725652A TW201725652A (zh) 2017-07-16
TWI717394B true TWI717394B (zh) 2021-02-01

Family

ID=58448019

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105131840A TWI717394B (zh) 2015-10-05 2016-10-03 具有熱阻流件之靜電卡盤

Country Status (4)

Country Link
US (1) US9805963B2 (enExample)
JP (1) JP6930826B2 (enExample)
KR (1) KR102648014B1 (enExample)
TW (1) TWI717394B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI635282B (zh) * 2017-08-29 2018-09-11 創意電子股份有限公司 半導體元件之測試設備及其搬運裝置
US11515130B2 (en) * 2018-03-05 2022-11-29 Applied Materials, Inc. Fast response pedestal assembly for selective preclean
CN110911332B (zh) * 2018-09-14 2022-11-25 北京北方华创微电子装备有限公司 静电卡盘
JP7002014B2 (ja) * 2018-10-30 2022-01-20 Toto株式会社 静電チャック
JP7441404B2 (ja) * 2019-03-05 2024-03-01 Toto株式会社 静電チャック、および処理装置
CN111668151B (zh) * 2019-03-05 2024-06-25 Toto株式会社 静电吸盘及处理装置
WO2020185467A1 (en) * 2019-03-08 2020-09-17 Lam Research Corporation Chuck for plasma processing chamber
KR102810211B1 (ko) * 2019-06-07 2025-05-19 어플라이드 머티어리얼스, 인코포레이티드 심리스 전기 도관
CN112768331B (zh) * 2019-11-01 2023-09-29 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其下电极组件、静电卡盘
JP7550551B2 (ja) * 2020-06-30 2024-09-13 京セラ株式会社 静電チャック
US20220301914A1 (en) * 2021-03-22 2022-09-22 Tokyo Electron Limited Electrostatic chuck for a plasma processing apparatus
JP7725614B2 (ja) * 2021-05-14 2025-08-19 アプライド マテリアルズ インコーポレイテッド 高速排熱能力を備えた高温サセプタ
US20230069317A1 (en) * 2021-08-25 2023-03-02 Applied Materials, Inc. Thermal choke plate
US11764094B2 (en) * 2022-02-18 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
JP2023162983A (ja) * 2022-04-27 2023-11-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030047283A1 (en) * 2001-09-10 2003-03-13 Applied Materials, Inc. Apparatus for supporting a substrate and method of fabricating same
US20080218931A1 (en) * 2007-03-09 2008-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. System for decharging a wafer or substrate after dechucking from an electrostatic chuck
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130826A (ja) * 1993-11-01 1995-05-19 Anelva Corp 静電チャック
JPH07183277A (ja) * 1993-12-21 1995-07-21 Tokyo Electron Ltd 処理装置
JP3370489B2 (ja) * 1995-08-31 2003-01-27 京セラ株式会社 静電チャック
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US5983906A (en) 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
KR19980071011A (ko) 1997-01-24 1998-10-26 조셉 제이. 스위니 고온 및 고 흐름 속도의 화학적 기상 증착 장치 및 관련증착 방법
US5841624A (en) 1997-06-09 1998-11-24 Applied Materials, Inc. Cover layer for a substrate support chuck and method of fabricating same
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US6219219B1 (en) 1998-09-30 2001-04-17 Applied Materials, Inc. Cathode assembly containing an electrostatic chuck for retaining a wafer in a semiconductor wafer processing system
US6291777B1 (en) 1999-02-17 2001-09-18 Applied Materials, Inc. Conductive feed-through for creating a surface electrode connection within a dielectric body and method of fabricating same
US6242360B1 (en) * 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6563686B2 (en) 2001-03-19 2003-05-13 Applied Materials, Inc. Pedestal assembly with enhanced thermal conductivity
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
US6669783B2 (en) 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20040025791A1 (en) 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US20060237138A1 (en) 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US8440049B2 (en) 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
KR101312292B1 (ko) 2006-12-11 2013-09-27 엘아이지에이디피 주식회사 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법
JP4944600B2 (ja) * 2006-12-28 2012-06-06 新光電気工業株式会社 基板温調固定装置
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
EP2321846A4 (en) 2008-08-12 2012-03-14 Applied Materials Inc ELECTROSTATIC FODDER ASSEMBLY
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP5143184B2 (ja) 2010-05-07 2013-02-13 日本碍子株式会社 ウエハー載置装置の製造方法
WO2012147931A1 (ja) * 2011-04-27 2012-11-01 住友大阪セメント株式会社 静電チャック装置
US9337067B2 (en) 2011-05-13 2016-05-10 Novellus Systems, Inc. High temperature electrostatic chuck with radial thermal chokes
KR102068853B1 (ko) * 2011-11-23 2020-01-22 램 리써치 코포레이션 Rf 스트랩 입력을 갖는 대칭적 rf 리턴 및 주변 rf 피드
US8941969B2 (en) 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
JP6077301B2 (ja) * 2012-12-28 2017-02-08 日本特殊陶業株式会社 静電チャック
TWI609991B (zh) * 2013-06-05 2018-01-01 維克儀器公司 具有熱一致性改善特色的晶圓舟盒
TW201518538A (zh) 2013-11-11 2015-05-16 Applied Materials Inc 像素化冷卻溫度控制的基板支撐組件

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030047283A1 (en) * 2001-09-10 2003-03-13 Applied Materials, Inc. Apparatus for supporting a substrate and method of fabricating same
US20080218931A1 (en) * 2007-03-09 2008-09-11 Taiwan Semiconductor Manufacturing Co., Ltd. System for decharging a wafer or substrate after dechucking from an electrostatic chuck
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support

Also Published As

Publication number Publication date
TW201725652A (zh) 2017-07-16
JP2017085089A (ja) 2017-05-18
KR20170044012A (ko) 2017-04-24
US9805963B2 (en) 2017-10-31
US20170098566A1 (en) 2017-04-06
JP6930826B2 (ja) 2021-09-01
KR102648014B1 (ko) 2024-03-14

Similar Documents

Publication Publication Date Title
TWI717394B (zh) 具有熱阻流件之靜電卡盤
KR102760927B1 (ko) 정전척 어셈블리
JP7489454B2 (ja) 基板支持体のための一体化された電極及び接地面
JP6441927B2 (ja) 局部的に加熱されるマルチゾーン式の基板支持体
KR101929278B1 (ko) 정전 척
US10373853B2 (en) Electrostatic chuck and wafer processing apparatus
JP6330087B2 (ja) 対称給電構造を有する基板サポート
JP6635295B2 (ja) 静電チャック
JP2022043074A (ja) ピクセル型温度制御式基板支持アセンブリ
US20170280509A1 (en) Electrostatic chuck heater
US10347521B2 (en) Heating member, electrostatic chuck, and ceramic heater
KR20160000419A (ko) 배치대 및 플라즈마 처리 장치
US9398680B2 (en) Immersible plasma coil assembly and method for operating the same
CN103946423A (zh) 用于半导体处理的具有二极管平面加热器区域的加热板
JP2017085089A5 (enExample)
JP2011091361A (ja) 静電チャック
CN108074855B (zh) 含形成法拉第笼的部分的夹持组件的静电卡盘和相关方法
KR20160143765A (ko) 무선 주파수(rf) 및 직류(dc) 에너지를 하나 또는 그 초과의 공통 전극들에 커플링시키기 위한 캐패시터 어셈블리들
TWI645499B (zh) 支撐基板的裝置以及操作靜電夾的方法
KR101329315B1 (ko) 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
JP2024153917A (ja) 静電チャック