TWI715674B - 鰭狀場效電晶體元件與其製造方法 - Google Patents

鰭狀場效電晶體元件與其製造方法 Download PDF

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TWI715674B
TWI715674B TW105137774A TW105137774A TWI715674B TW I715674 B TWI715674 B TW I715674B TW 105137774 A TW105137774 A TW 105137774A TW 105137774 A TW105137774 A TW 105137774A TW I715674 B TWI715674 B TW I715674B
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source
drain regions
structures
gate stack
substrate
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TW201721764A (zh
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張哲誠
林志翰
曾鴻輝
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台灣積體電路製造股份有限公司
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Abstract

一種鰭狀場效電晶體元件，包括基板、至少一閘極堆疊 結構、多個間隔物以及源極與汲極區域。閘極堆疊結構配置在基板上，且多個間隔物配置在閘極堆疊結構的側壁上。源極與汲極區域配置於基板內，且分設在閘極堆疊結構的相對側。具有接觸開口的介電層配置在基板的上方，並覆蓋閘極堆疊結構。金屬連接結構配置於接觸開口內，並連接至源極與汲極區域，且黏著層夾置於接觸開口以及位於接觸開口內的金屬連接結構之間。

Description

鰭狀場效電晶體元件與其製造方法
本發明實施例是有關於一種鰭狀場效電晶體元件與其製造方法。
由於半導體元件的閘極寬度與通道長度持續縮減，非平面或三維的場效電晶體結構(field effect transistor structure)，例如具有向上延伸的垂直鰭板的鰭狀場效電晶體(fin-type field effect transistor，FinFET)，已被發展用以提高電晶體的操作速度。
本發明實施例提供一種鰭狀場效電晶體元件，其包括基板、至少一閘極堆疊結構、多個間隔物、多個源極與汲極區域、介電層、至少一鞘結構以及至少一金屬連接結構。至少一閘極堆疊結構配置在基板上。多個間隔物配置在至少一閘極堆疊結構的側壁上。多個源極與汲極區域配置於基板內，且分設在至少一閘極堆疊結構的相對側。介電層配置在基板的上方以及至少一閘極 堆疊結構上，其中介電層包括暴露出多個源極與汲極區域的至少一接觸開口。至少一鞘結構配置於至少一接觸開口內。至少一金屬連接結構配置於至少一鞘結構以及至少一接觸開口內，其中至少一金屬連接結構連接至多個源極與汲極區域。
本發明實施例提供一種鰭狀場效電晶體元件，其包括基板、多個閘極堆疊結構、多個間隔物、多個源極與汲極區域、介電層、多個金屬連接結構。多個閘極堆疊結構配置在基板上。多個間隔物配置在多個閘極堆疊結構的相對側壁上。多個源極與汲極區域配置於基板內，且分設在多個閘極堆疊結構的相對側。介電層配置在基板的上方以及覆蓋多個閘極堆疊結構，其中介電層包括貫穿介電層以暴露出多個源極與汲極區域的多個接觸開口。多個金屬連接結構配置於多個接觸開口內並連接至多個源極與汲極區域，其中多個黏著層被夾置於多個接觸開口以及位於多個接觸開口內的多個金屬連接結構之間。
本發明實施例提供一種鰭狀場效電晶體元件的製造方法，所述方法包括提供具有多個閘極堆疊結構以及多個源極與汲極區域的基板，其中在基板上形成於上方形成有多個側壁間隔物的多個閘極堆疊結構以及在基板內形成多個源極與汲極區域。形成介電層於基板上方，且介電層覆蓋多個閘極堆疊結構、多個側壁間隔物以及多個源極與汲極區域。圖案化介電層以形成位於多個源極與汲極區域上方的多個接觸開口。形成多個鞘結構於暴處 出多個源極與汲極區域的多個接觸開口內。形成多個金屬連接結構於多個鞘結構內，其中多個鞘結構位在多個金屬連接結構與多個接觸開口之間。
10:鰭狀場效電晶體元件
102:基板
104:通道區
110:閘極堆疊結構
110a:閘極堆疊結構的頂表面
112:側壁
114:閘極介電條
116:閘極電極條
118:硬罩幕條
120:間隔物
125:源極與汲極區域
130:介電層
130a:介電層的頂表面
131:經圖案化的介電層
131a:經圖案化的介電層的頂表面
132:接觸開口
132b:接觸開口的側壁
134:黏著層
135:鞘結構
140:金屬連接結構
140a:金屬連接結構的頂表面
142:頂蓋層
150:罩幕圖案
152:孔洞
D:頂部尺寸
P:間距
S300、S302、S304、S306、S308、S310:步驟
根據以下的詳細說明並配合所附圖式以了解本發明實施例。應注意的是，根據本產業的一般作業，各種特徵並未按照比例繪製。事實上，為了清楚說明，可能任意的放大或縮小元件的尺寸。
圖1為依據一些本發明實施例的鰭狀場效電晶體元件的剖面示意圖。
圖2A到圖2G為依據一些本發明實施例的鰭狀場效電晶體元件的製造方法的各種階段所形成的鰭狀場效電晶體元件的剖面示意圖。
圖3為依據一些本發明實施例的鰭狀場效電晶體元件的製造方法的處理步驟的示例性流程圖。
以下揭露內容提供用於實施所提供的標的之不同特徵的許多不同實施例或實例。以下所描述的構件及配置的具體實例是為了以簡化的方式傳達本發明實施例為目的。當然，這些僅僅為實例而非用以限制。舉例來說，於以下描述中，在第一特徵上方 或在第一特徵上形成第二特徵可包括第二特徵與第一特徵形成為直接接觸的實施例，且亦可包括第二特徵與第一特徵之間可形成有額外特徵使得第二特徵與第一特徵可不直接接觸的實施例。此外，本發明實施例在各種實例中可使用相同的元件符號及/或字母來指代相同或類似的部件。元件符號的重複使用是為了簡單及清楚起見，且並不表示所欲討論的各個實施例及/或配置本身之間的關係。
另外，為了易於描述附圖中所繪示的一個構件或特徵與另一組件或特徵的關係，本文中可使用例如「在...下」、「在...下方」、「下部」、「在...上」、「在...上方」、「上部」及類似術語的空間相對術語。除了附圖中所繪示的定向之外，所述空間相對術語意欲涵蓋元件在使用或操作時的不同定向。設備可被另外定向(旋轉90度或在其他定向)，而本文所用的空間相對術語相應地作出解釋。
本發明實施例描述一種鰭狀場效電晶體元件的示例性製造方法及由此方式所形成的鰭狀場效電晶體元件。鰭狀場效電晶體元件例如是形成在單晶體半導體基板(monocrystalline semiconductor substrate)上，例如在一些實施方式中的基體矽基板(bulk silicon substrate)。在一些實施方式中，做為替代，鰭狀場效電晶體元件例如形成在絕緣層上有矽(silicon-on-insulator，SOI)基板或絕緣層上有鍺(Ge-on-insulator，GOI)基板上。另外，依據本發明實施例，矽基板例如包括其他導電層、摻雜區或其他半導體元件(諸如：電晶體、二極體或類似物等)。本發明實施例旨 在提供進一步的解釋，但不用於限制其範圍。
圖1為依據一些本發明實施例的鰭狀場效電晶體元件的剖面示意圖。在圖1中，鰭狀場效電晶體元件10包括形成在基板102上的至少一閘極堆疊結構110，形成在閘極堆疊結構110的相對側壁112上的多個間隔物120，以及位於基板102內並分設在閘極堆疊結構110的相對兩側的源極與汲極區域125。鰭狀場效電晶體元件10更包括位於間隔物120以及閘極堆疊結構110上方並覆蓋間隔物120以及閘極堆疊結構110的經圖案化的介電層131、與源極與汲極區域125相連接的至少一金屬連接結構140以及位於金屬連接結構140與間隔物120之間和位於金屬連接結構140與經圖案化的介電層131之間的鞘結構135。在一些實施方式中，閘極堆疊結構110包含多晶矽閘極結構或替換金屬閘極結構(replacement metal gate structure)。在一些實施方式中，位在間隔物120與閘極堆疊結構110旁邊的源極與汲極區域125包含應變源極與汲極區域(strained source and drain regions)。鰭狀場效電晶體元件10將設置於基板102的隔離結構(未繪製)之間。在一些實施方式中，鰭狀場效電晶體元件10為P型的鰭狀場效電晶體元件(p-type FinFET device)。在一些實施方式中，鰭狀場效電晶體元件10為N型的鰭狀場效電晶體元件(n-type FinFET device)。
圖2A到圖2G為依據一些本發明實施例的鰭狀場效電晶體元件的製造方法的各種階段所形成的鰭狀場效電晶體元件的剖面示意圖。請參照圖2A，提供形成有至少一閘極堆疊結構110與 源極與汲極區域125的基板102。在一些實施方式中，基板102例如是單晶體半導體基板或SOI基板。在一些實施方式中，基板102例如是矽基板。在一些實施方式中，在基板102上形成一個或多個閘極堆疊結構110，且閘極堆疊結構110為排列成彼此平行的條狀結構(strip-shaped structures)。圖2A僅繪示兩個閘極堆疊結構110用以說明本發明實施例，然其並非旨在限制本發明實施例中閘極堆疊結構110的數量。在一些實施方式中，閘極堆疊結構110包括多晶矽閘極結構或替換金屬閘極結構。在一些實施方式中，閘極堆疊結構110包括閘極介電條(gate dielectric strip)114、位於閘極介電條114上的閘極電極條(gate electrode strip)116以及位於閘極電極條116上的硬罩幕條(hard mask strip)118。此外，還有位在閘極堆疊結構110的相對側壁112上的多個間隔物120。在一些實施方式中，形成閘極堆疊結構110的方式包括先形成閘極介電層(未繪示)，於其上方依序地沈積閘極電極層(未繪示)與硬罩幕層(未繪示)，再圖案化硬罩幕層、閘極電極層以及閘極介電層，以形成閘極介電條114、閘極電極條116以及硬罩幕條118。閘極電極條116的材料包括經摻雜或未經摻雜的多晶矽或含金屬的導電材料。含金屬的導電材料包括鋁(aluminum，Al)、銅(copper，Cu)、鎢(tungsten，W)、鈷(cobalt，Co)、鈦(titanium，Ti)、鉭(tantalum，Ta)、銥(ruthenium，Ru)、氮化鈦(TiN)、鋁鈦合金(TiAl)d、氮化鋁鈦(TiAlN)、氮化鉭(TaN)、碳化鉭(TaC)、矽化鎳(NiSi)、矽化鈷(CoSi)或其組合。在一些實施方式中，閘極介電條114的材料包括氧化 矽(silicon oxide)、氮氧化矽(silicon oxynitride)、氮化矽(silicon nitride)或其組合。在一些實施方式中，閘極介電條114的材料包括高介電常數(high-k)的介電材料，並且高介電常數的介電材料具有大於約7.0的介電常數並包括金屬氧化物或鉿(hafnium，Hf)、鋁(Al)、鋯(zirconium，Zr)、鑭(lanthanum，La)、鎂(magnesium，Mg)、鋇(barium，Ba)、鈦(Ti)、鉛(lead，Pb)的矽酸鹽或其組合。取決於鰭狀場效電晶體元件10為P型的鰭狀場效電晶體元件或N型的鰭狀場效電晶體元件，閘極介電條114及/或閘極電極條116的材料是根據產品要求來選擇。在一個實施方式中，硬罩幕條118例如是由氮化矽、氧化矽或其組合所形成。在一些實施方式中，間隔物120為單層或多層結構。在特定實施方式中，間隔物120的材料包括氮化矽、氮氧化矽、上述的組合或其他合適的材料。在一些實施方式中，形成間隔物120的方式包括沈積一層介電材料的毯覆層(a blanket layer of a dielectric material)(未繪示)後對其執行非等向性蝕刻製程，以在閘極堆疊結構110的相對側壁112上形成間隔物120。
在圖2A中，在基板102內形成源極與汲極區域125，且源極與汲極區域125位在間隔物120與閘極堆疊結構110旁邊。在一些實施方式中，源極與汲極區域125包含應變源極與汲極區域或升起式磊晶源極與汲極區域(raised epitaxial source and drain regions)。在一些實施方式中，形成源極與汲極區域125的方式包括以一種或多種等向性蝕刻與非等向性蝕刻製程對將做為源極與汲極區域所在的位置的部分基板102進行圖案化(例如挖出凹 槽)，再將應變材料(未繪示)填入基板102的凹槽部分。當通道區104位於分設在閘極堆疊結構110的相對側的源極與汲極區域125之間，通道區104可以是受應力的(strained)或是受壓力的(stressed)，以增加元件的載子遷移率並提高元件的性能。在一些實施方式中，一些源極與汲極區域125與基板表面實質上共平面(substantially coplanar)或是從基板表面稍微突出。在一些特定實施方式中，當鰭狀場效電晶體元件10為P型的鰭狀場效電晶體元件，應變材料包括矽鍺(silicon germanium，SiGe)；或者，當鰭狀場效電晶體元件10為N型的鰭狀場效電晶體元件，應變材料包括碳化矽(silicon carbide，SiC)。在一些實施方式中，利用循環沈積蝕刻磊晶製程(cyclic deposition-etch(CDE)epitaxy process)或選擇性磊晶成長製程(selective epitaxial growth(SEG)process)來形成源極與汲極區域125，以使源極與汲極區域125形成具有高晶體質量的應變材料。在一些實施方式中，源極與汲極區域125是應變源極與汲極區域，且源極與汲極區域125的材料包括通過選擇性磊晶成長製程以臨場摻雜(in-situ doping)形成的摻雜硼的矽鍺(boron-doped silicon germanium)。在一些實施方式中，源極與汲極區域125可選擇性地以金屬矽化物(silicidation)製程而形成的金屬矽化物層(未繪示)。
在圖2B中，在基板102上方形成介電層130，且介電層130覆蓋閘極堆疊結構110、間隔物120以及源極與汲極區域125。在一些實施方式中，介電層130是層間介電層(inter-layer dielectric(ILD)layer)。在一些實施方式中，形成介電層130以填充閘極堆 疊結構110之間的間隙，直至介電層130的頂表面130a高於閘極堆疊結構110的頂表面110a。在一些實施方式中，介電層130包括選自氧化矽、氮化矽、碳化矽、氮碳化矽(silicon carbonitride，SiCN)或低介電常數(low-k)的介電材料中的至少一介電材料，且低介電常數的介電材料具有小於約4.0的介電常數並包括以電漿增強化學氣相沈積(plasma-enhanced chemical vapor deposition，PECVD)或旋塗法(spin-on method)所形成的含碳氧化物或矽酸鹽玻璃(silicate glass)。於形成介電層130後，在介電層130上形成具有多個孔洞152的罩幕圖案150。在後續製程中，罩幕圖案150是用於作為蝕刻罩幕，用於蝕刻位於下方的介電層130。在一些實施方式中，罩幕圖案150包括光阻材料(photoresist material)。孔洞152的位置對應於後續形成的接觸開口的預定位置。
請參照圖2C，通過蝕刻介電層130(圖2B)，介電層130被部分移除，以在源極與汲極區域125的上方形成多個接觸開口132。在一些實施方式中，介電層130被蝕刻直至暴露出源極與汲極區域125，且經圖案化的介電層131仍覆蓋閘極堆疊結構110。在一些實施方式中，罩幕圖案150(圖2B)在蝕刻介電層130的過程中被移除，或是在蝕刻完介電層130後被移除。在一些特定實施方式中，接觸開口132的形成(即：介電層130的蝕刻)包括一個或多個非等向性蝕刻製程、反應性離子蝕刻(reactive ion etching，RIE)製程或其組合。依據介電層130、硬罩幕條118及/或間隔物120所選定的材料來調整蝕刻速率及蝕刻選擇性，使介電層130 被向下蝕刻，以暴露出源極與汲極區域125及間隔物120，並最小化被移除的間隔物120與硬罩幕條118。在一些實施方式中，由於接觸開口132的高深寬比(high aspect ratio)，使得其蝕刻製程窗口較小，而於介電層130及/或間隔物120發生過度蝕刻(over-etching)，使得接觸開口132的頂部分變得較寬。在一些實施方式中，接觸開口132的頂部尺寸D稍大於閘極堆疊結構110間的間距P。在一些實施方式中，接觸開口132位於兩個最相鄰的閘極堆疊結構110之間，且部分的源極與汲極區域125及間隔物120被接觸開口132暴露出來。在一些特定實施方式中，接觸開口132的形狀(以俯視角度看來)可由罩幕圖案的設計來決定，且根據產品要求，其可以是圓形、橢圓形、四邊形或任何多邊形形狀。這裡所描述的接觸開口可以是圓形或多邊形孔，或是在基板102上沿著長度方向延伸的溝槽。
在一些實施方式中，如圖2D所示，在介電層130的蝕刻之後，於基板102上形成毯式的黏著層134，且黏著層134是實質上共形於上方描述結構的構形(topology)，即：被暴露出的源極與汲極區域125、間隔物120以及位於閘極堆疊結構110上方的經圖案化的介電層131。在一些特定實施方式中，黏著層134是實質上共形於接觸開口132的外型輪廓(profiles)，並平均地覆蓋接觸開口132的側壁132以及源極與汲極區域125。在一些實施方式中，黏著層134的材料可以是相同或不同於間隔物120的材料，且黏著層134的材料包括氮化矽、氮氧化矽、氮碳化矽或其組合。在一些實施方式中，黏著層134的形成包括原子層沈積法(atomic layer deposition，ALD)或電漿增強原子層沈積法(plasma-enhanced atomic layer deposition，PEALD)，且黏著層134的具有約5埃(angstrom，Å)至10埃範圍內的厚度。
圖2E為部分鰭狀場效電晶體元件10的剖面示意圖，且圖2E’為依據一些特定實施方式中的部分鰭狀場效電晶體元件10的剖面示意圖。在圖2E中，蝕刻上述共形的黏著層134(圖2D)，藉由移除位於源極與汲極區域125上方的黏著層134和位於經圖案化的介電層131上方的黏著層134，以形成位在接觸開口132的側壁132B上的鞘結構135。在一些特定實施方式中，位於接觸開口132的側壁132B上的鞘結構135(即：剩餘的黏著層134)覆蓋間隔物120以及部分的經圖案化的介電層131，但暴露出源極與汲極區域125。如圖2E’所示，在一個實施方式中，以圓形的接觸開口為例，鞘結構135看似一個中空的圓圈(a hollow circle)且形狀類似沿著接觸開口132佈置的封閉牆壁結構(a circled wall structure)，以暴露出源極與汲極區域125。在一些實施方式中，鞘結構135的形成(即：共形的黏著層134的蝕刻)包括一個或多個非等向性蝕刻製程。在一些特定實施方式中，透過調整括一個或多個非等向性蝕刻製程中的蝕刻氣體流率、壓力及/或蝕刻溫度，共形的黏著層134的蝕刻可被控制，以最小損傷(least damages)來選擇性移除位於源極與汲極區域125和經圖案化的介電層131上方的黏著層134，使得經圖案化的介電層131的頂表面131a以及源極與汲極區域125被暴露出來。藉由黏著層134覆蓋間隔物120以及經圖案化的介電層131所提供的更好保護，蝕刻製程窗口 變大。在一個實施方式中，是基於執行非等向性蝕刻製程來選擇黏著層134的材料，使得位於源極與汲極區域125上方的黏著層134可被選擇性地蝕刻直至暴露出源極與汲極區域125，而位於間隔物120以及經圖案化的介電層131上的黏著層134依舊被保留，用以提供更好絕緣(better insulation)。也就是說，位於接觸開口132內的鞘結構135(即：剩餘的黏著層134)加強閘極堆疊結構110與後續形成的金屬連接結構或接點之間的隔離(isolation)與絕緣(insulation)。如上述，在一些實施方式中，在接觸開口132的形成過程中，介電層130及/或間隔物120可被過度蝕刻或甚至被下拉(pulled down)，且後續形成的黏著層134進一步覆蓋介電層130及間隔物120來加強閘極堆疊結構110的隔離。因此，形成接觸開口132的在線控制(in-line control)變得較佳，且形成金屬連接結構或接點的製程窗口也變大。
在一些實施方式中，在形成鞘結構135之後，在接觸開口132內形成金屬連接結構140，如圖2F所示。在一些實施方式中，形成金屬材料(未繪示)以填充接觸開口132並覆蓋經圖案化的介電層131，執行諸如化學機械研磨(chemical mechanical polishing，CMP)製程等的平坦化製程以移除在經圖案化的介電層131上方的部分金屬材料，而位於接觸開口132內與源極與汲極區域125上方的金屬材料則作為金屬連接結構140。在平坦化製程後，金屬連接結構140的頂表面140a與經圖案化的介電層131的頂表面131a實質上共平面。在一些實施方式中，金屬連接結構140的材料包括鎢(W)、銅(Cu)、其組合或其他具有合適電阻 與間隙填充能力(gap-fill capability)的金屬材料。在一個實施方式中，金屬連接結構140包括鎢，並且是通過濺射(sputtering)、化學氣相沈積法(chemical vapor deposition，CVD)、電化學電鍍法(electrochemical plating，ECP)等製程而形成。在圖2F中，鞘結構135位在金屬連接結構140與間隔物120之間以及金屬連接結構140與經圖案化的介電層131之間；且通過鞘結構135、間隔物120以及經圖案化的介電層131，金屬連接結構140與閘極堆疊結構110彼此隔離。金屬連接結構140電性連接至源極與汲極區域125，並至少藉由鞘結構135、間隔物120以及經圖案化的介電層131，與閘極堆疊結構110電性絕緣。在一些特定實施方式中，藉由介電層134與鞘結構135的形成而提供的較佳隔離，使得鰭狀場效電晶體元件的可靠性與產率獲得改善，並提升晶圓的測試結果諸如電路探針測試結果(circuit probe testing results)。此外，透過黏著層的形成，能夠允許得到更小的金屬連接結構關鍵尺寸(critical dimension，CD)。
在圖2G中，選擇性地在金屬連接結構140及經圖案化的介電層131的上方形成頂蓋層142。在一些實施方式中，頂蓋層142作為蝕刻阻擋層，且頂蓋層142的材料包括氮化物。
在上述本發明實施例中，控制接觸開口132的蝕刻輪廓以避免損失過多的間隔物120及/或介電層130，且黏著層更進一步地將金屬堆疊結構從金屬連接結構隔離開來。因此，對於小尺寸的元件來說，可以形成具有較好隔離性且具有較小特徵尺寸的金屬連接結構，使得元件的可靠性獲得改善且提升元件的性能。 此外，依據上述本發明實施例，由於蝕刻製程窗口變大，金屬連接結構可精確地對準連接至源極與汲極區域。
圖3為依據一些本發明實施例的鰭狀場效電晶體元件的製造方法的處理步驟的示例性流程圖。
雖然上述的方法的處理步驟是以一系列的動作或事件做為示例以進行說明，但應當理解的是，這些動作與事件的說明順序不應解釋為具備任何限制性的意義。此外，並非所有經說明的製程或步驟皆需於一個或多個的本發明實施例中具以實行。
在步驟S300中，提供具有至少一閘極堆疊結構以及源極與汲極區域的基板，其中於上方形成有多個側壁間隔物的至少一閘極堆疊結構是形成在基板上以及源極與汲極區域是形成於基板內。基板是矽基板或SOI基板。在步驟S302中，形成介電層於基板上方，且介電層覆蓋閘極堆疊結構、側壁間隔物以及源極與汲極區域。在步驟S304中，圖案化介電層，以形成位於源極與汲極區域上方的多個接觸開口。在步驟S306中，形成黏著層於基板上，且黏著層是共形地(conformally)覆蓋多個接觸開口以及經圖案化的介電層。在步驟S308中，形成多個鞘結構於多個接觸開口內。在一些實施方式中，藉由蝕刻黏著層直至暴露出源極與汲極區域來形成鞘結構，其中蝕刻黏著層包括一個或多個非等向性蝕刻製程、RIE製程或其組合。在一些實施方式中，鞘結構與接觸開口的側壁相接觸(in contact with)，但暴露出源極與汲極區域。在步驟S310中，形成多個金屬連接結構於多個鞘結構內，且鞘結構位在金屬連接結構與接觸開口之間。
在上述本發明實施例中，通過黏著層的形成，不但蝕刻製程的窗口變大且可對金屬堆疊結構提供更好的隔離性。對於具有以緊密間距或間隔排列的閘極堆疊結構之元件來說，形成於多個接觸開口內的鞘結構可協助形成具有良好可靠性與較小特徵尺寸的金屬連接結構。由於金屬連接結構良好精準地連接至源極與汲極區域，元件的可靠性與電性性能可獲得提升。
一種鰭狀場效電晶體元件包括基板、至少一閘極堆疊結構、多個間隔物、源極與汲極區域、介電層、至少一鞘結構以及至少一金屬連接結構。至少一閘極堆疊結構配置在基板上。多個間隔物配置在至少一閘極堆疊結構的側壁上。源極與汲極區域配置於基板內，且分設在至少一閘極堆疊結構的相對側。介電層配置在基板的上方以及至少一閘極堆疊結構上，其中介電層包括暴露出源極與汲極區域的至少一接觸開口。至少一鞘結構配置於至少一接觸開口內。至少一金屬連接結構配置於至少一鞘結構以及至少一接觸開口內，其中至少一金屬連接結構連接至源極與汲極區域。
在一些實施方式中，至少一金屬連接結構電性連接至源極與汲極區域，並通過至少一鞘結構以及多個間隔物，與至少一閘極堆疊結構電性絕緣。在一些實施方式中，至少一鞘結構與被至少一接觸開口所暴露出的間隔物相接觸，且至少一鞘結構位於至少一金屬連接結構與至少一接觸開口之間。在一些實施方式中，至少一鞘結構的材料包括氮化矽、氮氧化矽、氮碳化矽或其組合。在一些實施方式中，至少一金屬連接結構的材料包括鎢、 銅或其組合。在一些實施方式中，源極與汲極區域包含應變源極與汲極區域，且源極與汲極區域的材料包括矽鍺或碳化矽。在一些實施方式中，至少一閘極堆疊結構的材料包括多晶矽閘極結構或替換金屬閘極結構。
一種鰭狀場效電晶體元件包括基板、多個閘極堆疊結構、多個間隔物、源極與汲極區域、介電層、多個金屬連接結構。多個閘極堆疊結構配置在基板上。多個間隔物配置在多個閘極堆疊結構的相對側壁上。源極與汲極區域配置於基板內，且分設在多個閘極堆疊結構的相對側。介電層配置在基板的上方以及覆蓋多個閘極堆疊結構，其中介電層包括貫穿介電層以暴露出源極與汲極區域的多個接觸開口。多個金屬連接結構配置於多個接觸開口內並連接至源極與汲極區域，其中多個黏著層被夾置於多個接觸開口以及位於多個接觸開口內的多個金屬連接結構之間。
在一些實施方式中，通過多個間隔物以及位於多個接觸開口內的多個黏著層，多個金屬連接結構與多個閘極堆疊結構電性絕緣，且多個金屬連接結構電性連接至源極與汲極區域。在一些實施方式中，多個黏著層的材料包括氮化矽、氮氧化矽、氮碳化矽或其組合，且多個間隔物的材料包括氮化矽、氮氧化矽或其組合。在一些實施方式中，多個金屬連接結構的材料包括鎢、銅或其組合。在一些實施方式中，多個金屬連接結構的頂表面與介電層的頂表面實質上共平面。在一些實施方式中，源極與汲極區域包含應變源極與汲極區域，且源極與汲極區域的材料包括矽鍺或碳化矽。
一種鰭狀場效電晶體元件的製造方法。提供具有多個閘極堆疊結構以及源極與汲極區域的基板，其中在基板上形成於上方形成有多個側壁間隔物的多個閘極堆疊結構以及在基板內形成源極與汲極區域。形成介電層於基板上方，且介電層覆蓋多個閘極堆疊結構、多個側壁間隔物以及源極與汲極區域。圖案化介電層以形成位於源極與汲極區域上方的多個接觸開口。形成多個鞘結構於暴處出源極與汲極區域的多個接觸開口內。形成多個金屬連接結構於多個鞘結構內，其中多個鞘結構位在多個金屬連接結構與多個接觸開口之間。
在一些實施方式中，形成多個鞘結構於多個接觸開口內包括共形地(conformally)形成覆蓋多個接觸開口以及經圖案化的介電層的黏著層於基板上，且移除位於源極與汲極區域和經圖案化的介電層上方的黏著層。在一些實施方式中，黏著層的材料包括氮化矽、氮氧化矽、氮碳化矽或其組合，且形成黏著層包括執行原子層沈積法或電漿增強原子層沈積法。在一些實施方式中，移除位於源極與汲極區域和經圖案化的介電層上方的黏著層包括執行一個或多個非等向性蝕刻製程、反應性離子蝕刻製程或其組合。在一些實施方式中，形成多個金屬連接結構包括通過執行濺射、化學氣相沈積法、電化學電鍍法於多個接觸開口內形成鎢。在一些實施方式中，圖案化介電層以形成多個接觸開口包括執行一個或多個非等向性蝕刻製程、反應性離子蝕刻製程或其組合。在一些實施方式中，鰭狀場效電晶體元件的製造方法更包括形成頂蓋層在多個金屬連接結構及經圖案化的介電層上。
以上概述了數個實施例的特徵，使本領域具有通常知識者可更佳了解本揭露的態樣。本領域具有通常知識者應理解，其可輕易地使用本揭露作為設計或修改其他製程與結構的依據，以實行本文所介紹的實施例的相同目的及/或達到相同優點。本領域具有通常知識者還應理解，這種等效的配置並不悖離本揭露的精神與範疇，且本領域具有通常知識者在不悖離本揭露的精神與範疇的情況下可對本文做出各種改變、置換以及變更。
10:鰭狀場效電晶體元件
102:基板
104:通道區
110:閘極堆疊結構
112:側壁
120:間隔物
125:源極與汲極區域
131:經圖案化的介電層
135:鞘結構
140:金屬連接結構

Claims (10)

  1. 一種鰭狀場效電晶體元件，包括：基板；至少一閘極堆疊結構，配置在所述基板上；多個間隔物，配置在所述至少一閘極堆疊結構的側壁上；多個源極與汲極區域，配置於所述基板內且分設在所述至少一閘極堆疊結構的相對側；介電層，配置在所述基板的上方以及所述至少一閘極堆疊結構上，其中所述介電層包括暴露出所述多個源極與汲極區域中的至少一者的至少一接觸開口；至少一鞘結構，直接配置在所述多個源極與汲極區域上，且配置於所述至少一接觸開口內，其中所述至少一鞘結構由介電材料形成；以及至少一金屬連接結構，配置於所述至少一鞘結構以及所述至少一接觸開口內，其中所述至少一鞘結構包圍並包覆所述至少一金屬連接結構的所有側壁而不與所述至少一金屬連接結構的底表面相接觸，且所述至少一金屬連接結構直接接觸並連接至所述多個源極與汲極區域中的至少一者。
  2. 如申請專利範圍第1項所述的鰭狀場效電晶體元件，其中所述至少一金屬連接結構電性連接至所述多個源極與汲極區 域，並通過所述至少一鞘結構以及所述多個間隔物，與所述至少一閘極堆疊結構電性絕緣。
  3. 如申請專利範圍第1項所述的鰭狀場效電晶體元件，其中所述至少一鞘結構與被所述至少一接觸開口所暴露出的所述多個間隔物相接觸，且所述至少一鞘結構位於所述至少一金屬連接結構與所述至少一接觸開口之間。
  4. 如申請專利範圍第1項所述的鰭狀場效電晶體元件，其中所述至少一鞘結構的材料包括氮化矽、氮氧化矽、氮碳化矽或其組合。
  5. 一種鰭狀場效電晶體元件，包括基板；多個閘極堆疊結構，配置在所述基板上；多個間隔物，配置在所述多個閘極堆疊結構中的每一個的相對側壁上；多個源極與汲極區域，配置於所述基板內，且分設在所述多個閘極堆疊結構中的每一個的相對側；介電層，配置在所述基板的上方以及覆蓋所述多個閘極堆疊結構，其中所述介電層包括貫穿所述介電層以暴露出所述多個源極與汲極區域的多個接觸開口；以及多個金屬連接結構，配置於所述多個接觸開口內並直接接觸且連接至所述多個源極與汲極區域，其中多個黏著層直接配置於 所述多個源極與汲極區域上且被夾置於所述多個接觸開口以及位於所述多個接觸開口內的所述多個金屬連接結構之間，其中所述多個黏著層由介電材料形成，所述多個黏著層中的每一個是包圍並包覆所述多個金屬連接結構中的一個的封閉的壁結構且不與所述多個金屬連接結構中的每一個的底表面相接觸。
  6. 如申請專利範圍第5項所述的鰭狀場效電晶體元件，其中通過所述多個間隔物以及位於所述多個接觸開口內的所述多個黏著層，所述多個金屬連接結構與所述多個閘極堆疊結構電性絕緣，且所述多個金屬連接結構電性連接至所述多個源極與汲極區域。
  7. 如申請專利範圍第5項所述的鰭狀場效電晶體元件，其中所述多個黏著層的材料包括氮化矽、氮氧化矽、氮碳化矽或其組合，且所述多個間隔物的材料包括氮化矽、氮氧化矽或其組合。
  8. 如申請專利範圍第5項所述的鰭狀場效電晶體元件，其中所述多個金屬連接結構的頂表面與所述介電層的頂表面實質上共平面。
  9. 一種鰭狀場效電晶體元件的製造方法，包括：提供具有多個閘極堆疊結構以及多個源極與汲極區域的基板，其中在所述基板上形成於上方形成有多個側壁間隔物的所述多個閘極堆疊結構以及在所述基板內形成所述多個源極與汲極區域； 形成介電層於所述基板上方，且所述介電層覆蓋所述多個閘極堆疊結構、所述多個側壁間隔物以及所述多個源極與汲極區域；圖案化所述介電層以形成位於所述多個源極與汲極區域上方的多個接觸開口，所述多個接觸開口暴處出所述多個源極與汲極區域；形成多個鞘結構於所述多個源極與汲極區域上及所述多個接觸開口內，所述多個鞘結構覆蓋所述多個接觸開口的側壁但暴處出所述多個源極與汲極區域，其中所述多個鞘結構由介電材料形成；以及形成多個金屬連接結構於所述多個源極與汲極區域上及所述多個鞘結構內，其中所述多個鞘結構位在所述多個金屬連接結構與所述多個接觸開口之間，且所述多個鞘結構中的每一個是包圍並包覆所述多個金屬連接結構中的一個的封閉的壁結構。
  10. 如申請專利範圍第9項所述的製造方法，其中形成所述多個鞘結構於所述多個接觸開口內包括：共形地形成覆蓋所述多個接觸開口以及所述經圖案化的介電層的黏著層於所述基板上；以及移除位於所述多個源極與汲極區域和所述經圖案化的介電層上方的所述黏著層。
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