TWI715466B - 鉬合金靶材及其製造方法 - Google Patents
鉬合金靶材及其製造方法 Download PDFInfo
- Publication number
- TWI715466B TWI715466B TW109108863A TW109108863A TWI715466B TW I715466 B TWI715466 B TW I715466B TW 109108863 A TW109108863 A TW 109108863A TW 109108863 A TW109108863 A TW 109108863A TW I715466 B TWI715466 B TW I715466B
- Authority
- TW
- Taiwan
- Prior art keywords
- atomic
- target material
- powder
- target
- less
- Prior art date
Links
- 239000013077 target material Substances 0.000 title claims abstract description 39
- 229910001182 Mo alloy Inorganic materials 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims description 41
- 238000005245 sintering Methods 0.000 claims description 23
- 239000011812 mixed powder Substances 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 229910003294 NiMo Inorganic materials 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 abstract description 19
- 238000004544 sputter deposition Methods 0.000 abstract description 17
- 230000002159 abnormal effect Effects 0.000 abstract description 8
- 238000012545 processing Methods 0.000 abstract description 8
- 238000005304 joining Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 14
- 238000003754 machining Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 229910000990 Ni alloy Inorganic materials 0.000 description 7
- 238000002438 flame photometric detection Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 208000037584 hereditary sensory and autonomic neuropathy Diseases 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910001000 nickel titanium Inorganic materials 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910016027 MoTi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019052836 | 2019-03-20 | ||
| JP2019-052836 | 2019-03-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202035752A TW202035752A (zh) | 2020-10-01 |
| TWI715466B true TWI715466B (zh) | 2021-01-01 |
Family
ID=72563712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109108863A TWI715466B (zh) | 2019-03-20 | 2020-03-18 | 鉬合金靶材及其製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7419885B2 (ja) |
| KR (1) | KR20200112715A (ja) |
| CN (1) | CN111719125A (ja) |
| TW (1) | TWI715466B (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113463042A (zh) * | 2021-05-31 | 2021-10-01 | 洛阳科威钨钼有限公司 | 一种钼钛合金溅射镀膜靶材的制备方法 |
| CN114934260B (zh) * | 2022-05-23 | 2024-02-13 | 安泰天龙钨钼科技有限公司 | 一种钼合金靶材及其制备方法和应用 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201441399A (zh) * | 2013-02-15 | 2014-11-01 | Hitachi Metals Ltd | 鉬合金濺鍍靶材的製造方法及鉬合金濺鍍靶材 |
| TW201612338A (en) * | 2014-08-20 | 2016-04-01 | Plansee Se | Metallization for a thin-film component, process for the production thereof and sputtering target |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4110533B2 (ja) * | 2004-02-27 | 2008-07-02 | 日立金属株式会社 | Ｍｏ系ターゲット材の製造方法 |
| JP2008255440A (ja) | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | ＭｏＴｉ合金スパッタリングターゲット材 |
| JP2010070409A (ja) * | 2008-09-17 | 2010-04-02 | Idemitsu Kosan Co Ltd | 酸化物焼結体の製造方法 |
| JP5370917B2 (ja) * | 2009-04-20 | 2013-12-18 | 日立金属株式会社 | Ｆｅ−Ｃｏ−Ｎｉ系合金スパッタリングターゲット材の製造方法 |
| JP5550328B2 (ja) | 2009-12-22 | 2014-07-16 | 株式会社東芝 | Ｍｏスパッタリングターゲットおよびその製造方法 |
| JP5988140B2 (ja) | 2011-06-07 | 2016-09-07 | 日立金属株式会社 | ＭｏＴｉターゲット材の製造方法およびＭｏＴｉターゲット材 |
| JP6602550B2 (ja) | 2014-04-28 | 2019-11-06 | 株式会社アライドマテリアル | スパッタリングターゲット用材料 |
| JP6997945B2 (ja) * | 2016-12-27 | 2022-01-18 | 日立金属株式会社 | 積層配線膜およびその製造方法ならびにＭｏ合金スパッタリングターゲット材 |
-
2020
- 2020-03-06 JP JP2020038877A patent/JP7419885B2/ja active Active
- 2020-03-18 TW TW109108863A patent/TWI715466B/zh active
- 2020-03-19 KR KR1020200033611A patent/KR20200112715A/ko not_active Application Discontinuation
- 2020-03-20 CN CN202010200455.3A patent/CN111719125A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201441399A (zh) * | 2013-02-15 | 2014-11-01 | Hitachi Metals Ltd | 鉬合金濺鍍靶材的製造方法及鉬合金濺鍍靶材 |
| TW201612338A (en) * | 2014-08-20 | 2016-04-01 | Plansee Se | Metallization for a thin-film component, process for the production thereof and sputtering target |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7419885B2 (ja) | 2024-01-23 |
| KR20200112715A (ko) | 2020-10-05 |
| JP2020158880A (ja) | 2020-10-01 |
| TW202035752A (zh) | 2020-10-01 |
| CN111719125A (zh) | 2020-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5562929B2 (ja) | タングステンスパッタリングターゲットおよびその製造方法 | |
| EP2125270B1 (en) | Process for producing high density refractory metals&alloys sputtering targets | |
| TWI525206B (zh) | Ytterbium sputtering target and manufacturing method of the target | |
| JP4323562B2 (ja) | 焼結シリコンウエハ | |
| KR101337484B1 (ko) | 스퍼터링 타겟 및 그 제조방법 | |
| TWI715466B (zh) | 鉬合金靶材及其製造方法 | |
| EP3608438B1 (en) | Tungsten silicide target and method of manufacturing same | |
| JP4415303B2 (ja) | 薄膜形成用スパッタリングターゲット | |
| JP2023076733A (ja) | タングステンスパッタリングターゲット | |
| TWI684660B (zh) | TiW合金靶材及其製造方法 | |
| JP6459058B2 (ja) | Ｍｏ合金ターゲット | |
| TWI675116B (zh) | Ｔｉ－Ａｌ合金濺鍍靶 | |
| TWI715467B (zh) | 鉬合金靶材及其製造方法 | |
| TW201504450A (zh) | 鉬合金靶材之製法 | |
| JP7293787B2 (ja) | ＴａＷＳｉターゲットおよびその製造方法 | |
| KR102198726B1 (ko) | 스퍼터링 타깃용 재료 | |
| CN111936660A (zh) | Cu-Ni合金溅射靶 | |
| CN113614279B (zh) | V合金靶 | |
| TW200940447A (en) | Sintered silicon wafer | |
| KR20230133222A (ko) | 크롬 소결체 및 그 제조 방법, 스퍼터링 타깃 및 크롬막 부착 기판의 제조 방법 |