TWI714700B - 對於半導體基板材料賦予撥醇性的液體組成物及利用該液體組成物的半導體基板之表面處理方法 - Google Patents
對於半導體基板材料賦予撥醇性的液體組成物及利用該液體組成物的半導體基板之表面處理方法 Download PDFInfo
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- TWI714700B TWI714700B TW106100926A TW106100926A TWI714700B TW I714700 B TWI714700 B TW I714700B TW 106100926 A TW106100926 A TW 106100926A TW 106100926 A TW106100926 A TW 106100926A TW I714700 B TWI714700 B TW I714700B
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- amine
- acid
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- liquid composition
- semiconductor substrate
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- 239000000758 substrate Substances 0.000 title claims description 81
- 239000007788 liquid Substances 0.000 title claims description 74
- 239000000203 mixture Substances 0.000 title claims description 63
- 239000004065 semiconductor Substances 0.000 title claims description 59
- 239000000463 material Substances 0.000 title claims description 39
- 238000004381 surface treatment Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 22
- 230000001476 alcoholic effect Effects 0.000 title description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 105
- 150000001875 compounds Chemical class 0.000 claims description 50
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 33
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 claims description 28
- 125000001424 substituent group Chemical group 0.000 claims description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 22
- 239000004094 surface-active agent Substances 0.000 claims description 22
- 150000001412 amines Chemical group 0.000 claims description 19
- VVJKKWFAADXIJK-UHFFFAOYSA-N Allylamine Chemical compound NCC=C VVJKKWFAADXIJK-UHFFFAOYSA-N 0.000 claims description 16
- -1 trifluoroacetate ion Chemical class 0.000 claims description 15
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- 125000000129 anionic group Chemical group 0.000 claims description 14
- 229920001577 copolymer Polymers 0.000 claims description 14
- 229920002873 Polyethylenimine Polymers 0.000 claims description 13
- 125000003342 alkenyl group Chemical group 0.000 claims description 12
- 125000000304 alkynyl group Chemical group 0.000 claims description 12
- 125000003277 amino group Chemical group 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 12
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000005871 repellent Substances 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 150000001247 metal acetylides Chemical class 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- GBCKRQRXNXQQPW-UHFFFAOYSA-N n,n-dimethylprop-2-en-1-amine Chemical compound CN(C)CC=C GBCKRQRXNXQQPW-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 230000003578 releasing effect Effects 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 229910002651 NO3 Inorganic materials 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 229920001519 homopolymer Polymers 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 4
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- QFUSOYKIDBRREL-NSCUHMNNSA-N (e)-but-2-en-1-amine Chemical compound C\C=C\CN QFUSOYKIDBRREL-NSCUHMNNSA-N 0.000 claims description 3
- XBWQFDNGNOOMDZ-UHFFFAOYSA-N 1,1,2,2,3,3,3-heptafluoropropane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)F XBWQFDNGNOOMDZ-UHFFFAOYSA-N 0.000 claims description 3
- XOCOKKRWJNSWQZ-UHFFFAOYSA-N 1,1,2,2,3,3,3-heptafluoropropylphosphonic acid Chemical compound OP(O)(=O)C(F)(F)C(F)(F)C(F)(F)F XOCOKKRWJNSWQZ-UHFFFAOYSA-N 0.000 claims description 3
- AUBOIAPNLUHLAF-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,4-nonafluorobutylphosphonic acid Chemical compound OP(O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AUBOIAPNLUHLAF-UHFFFAOYSA-N 0.000 claims description 3
- KCZIAIJJDOASNM-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,5-undecafluoropentylphosphonic acid Chemical compound OP(O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F KCZIAIJJDOASNM-UHFFFAOYSA-N 0.000 claims description 3
- AGCUFKNHQDVTAD-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,6-tridecafluorohexylphosphonic acid Chemical compound OP(O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F AGCUFKNHQDVTAD-UHFFFAOYSA-N 0.000 claims description 3
- OYGQVDSRYXATEL-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,7-pentadecafluoroheptane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F OYGQVDSRYXATEL-UHFFFAOYSA-N 0.000 claims description 3
- SHUMMWZAADWKRL-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,7-pentadecafluoroheptylphosphonic acid Chemical compound OP(O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SHUMMWZAADWKRL-UHFFFAOYSA-N 0.000 claims description 3
- CPRNWMZKNOIIML-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctylphosphonic acid Chemical compound OP(O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CPRNWMZKNOIIML-UHFFFAOYSA-N 0.000 claims description 3
- VWCUZQQRMDKELX-UHFFFAOYSA-N 1-[(6-nitro-2-thiophen-2-ylimidazo[1,2-a]pyridin-3-yl)methyl]piperidin-1-ium-4-carboxylate Chemical compound C1CC(C(=O)O)CCN1CC1=C(C=2SC=CC=2)N=C2N1C=C([N+]([O-])=O)C=C2 VWCUZQQRMDKELX-UHFFFAOYSA-N 0.000 claims description 3
- LVDGGZAZAYHXEY-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,13-pentacosafluorotridecanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F LVDGGZAZAYHXEY-UHFFFAOYSA-N 0.000 claims description 3
- RUDINRUXCKIXAJ-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,14-heptacosafluorotetradecanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RUDINRUXCKIXAJ-UHFFFAOYSA-N 0.000 claims description 3
- BJNCSIWIMCWIMS-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,13,13,14,14,15,15,15-nonacosafluoropentadecanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F BJNCSIWIMCWIMS-UHFFFAOYSA-N 0.000 claims description 3
- BOECHSSNNYQCRI-UHFFFAOYSA-N 2,3-dimethylbut-2-en-1-amine Chemical compound CC(C)=C(C)CN BOECHSSNNYQCRI-UHFFFAOYSA-N 0.000 claims description 3
- PDLOGTOXFRBJKR-UHFFFAOYSA-N 2-methylbut-2-en-1-amine Chemical compound CC=C(C)CN PDLOGTOXFRBJKR-UHFFFAOYSA-N 0.000 claims description 3
- VXDHQYLFEYUMFY-UHFFFAOYSA-N 2-methylprop-2-en-1-amine Chemical compound CC(=C)CN VXDHQYLFEYUMFY-UHFFFAOYSA-N 0.000 claims description 3
- CETXMCMQEXPPLV-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecylphosphonic acid Chemical compound OP(O)(=O)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CETXMCMQEXPPLV-UHFFFAOYSA-N 0.000 claims description 3
- ZHZPKMZKYBQGKG-UHFFFAOYSA-N 6-methyl-2,4,6-tris(trifluoromethyl)oxane-2,4-diol Chemical compound FC(F)(F)C1(C)CC(O)(C(F)(F)F)CC(O)(C(F)(F)F)O1 ZHZPKMZKYBQGKG-UHFFFAOYSA-N 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- VXZRPKMPGWUSGA-UHFFFAOYSA-N N-ethyl-N,2,3-trimethylbut-2-en-1-amine Chemical compound CC(=C(CN(CC)C)C)C VXZRPKMPGWUSGA-UHFFFAOYSA-N 0.000 claims description 3
- WMUCPJYLYBKGIY-UHFFFAOYSA-N N-ethyl-N,2-dimethylbut-2-en-1-amine Chemical compound CCN(C)CC(C)=CC WMUCPJYLYBKGIY-UHFFFAOYSA-N 0.000 claims description 3
- KQNSPSCVNXCGHK-UHFFFAOYSA-N [3-(4-tert-butylphenoxy)phenyl]methanamine Chemical compound C1=CC(C(C)(C)C)=CC=C1OC1=CC=CC(CN)=C1 KQNSPSCVNXCGHK-UHFFFAOYSA-N 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- 229940006460 bromide ion Drugs 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-M hydrogensulfate Chemical compound OS([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-M 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims description 3
- 229940006461 iodide ion Drugs 0.000 claims description 3
- LRPCLTPZMUIPFK-UHFFFAOYSA-N methane;sulfuric acid Chemical compound C.OS(O)(=O)=O LRPCLTPZMUIPFK-UHFFFAOYSA-N 0.000 claims description 3
- MBZUZXQXDBJANN-UHFFFAOYSA-N n,2,3-trimethylbut-2-en-1-amine Chemical compound CNCC(C)=C(C)C MBZUZXQXDBJANN-UHFFFAOYSA-N 0.000 claims description 3
- IUULRFDJTPRMJA-UHFFFAOYSA-N n,2-dimethylbut-2-en-1-amine Chemical compound CNCC(C)=CC IUULRFDJTPRMJA-UHFFFAOYSA-N 0.000 claims description 3
- NOBVTKCADZWKHR-UHFFFAOYSA-N n,2-dimethylprop-2-en-1-amine Chemical compound CNCC(C)=C NOBVTKCADZWKHR-UHFFFAOYSA-N 0.000 claims description 3
- RMROAFFSFMPZDD-UHFFFAOYSA-N n,n,2,3-tetramethylbut-2-en-1-amine Chemical compound CN(C)CC(C)=C(C)C RMROAFFSFMPZDD-UHFFFAOYSA-N 0.000 claims description 3
- DKIVIRNEONJXNW-UHFFFAOYSA-N n,n,2-trimethylbut-2-en-1-amine Chemical compound CC=C(C)CN(C)C DKIVIRNEONJXNW-UHFFFAOYSA-N 0.000 claims description 3
- GKZOJSZSGYEWSA-UHFFFAOYSA-N n,n,2-trimethylprop-2-en-1-amine Chemical compound CN(C)CC(C)=C GKZOJSZSGYEWSA-UHFFFAOYSA-N 0.000 claims description 3
- XDRICPWYZLCAIO-UHFFFAOYSA-N n,n-diethyl-2,3-dimethylbut-2-en-1-amine Chemical compound CCN(CC)CC(C)=C(C)C XDRICPWYZLCAIO-UHFFFAOYSA-N 0.000 claims description 3
- KVSBDGIHGLOIOT-UHFFFAOYSA-N n,n-diethyl-2-methylbut-2-en-1-amine Chemical compound CCN(CC)CC(C)=CC KVSBDGIHGLOIOT-UHFFFAOYSA-N 0.000 claims description 3
- QSZVXIAOKRJLJW-UHFFFAOYSA-N n,n-diethyl-2-methylprop-2-en-1-amine Chemical compound CCN(CC)CC(C)=C QSZVXIAOKRJLJW-UHFFFAOYSA-N 0.000 claims description 3
- JAGLTDLJKOOIND-UHFFFAOYSA-N n,n-diethylbut-2-en-1-amine Chemical compound CCN(CC)CC=CC JAGLTDLJKOOIND-UHFFFAOYSA-N 0.000 claims description 3
- JWAJUTZQGZBKFS-UHFFFAOYSA-N n,n-diethylprop-2-en-1-amine Chemical compound CCN(CC)CC=C JWAJUTZQGZBKFS-UHFFFAOYSA-N 0.000 claims description 3
- YEZFZWKMYVDWFK-UHFFFAOYSA-N n,n-dimethylbut-2-en-1-amine Chemical compound CC=CCN(C)C YEZFZWKMYVDWFK-UHFFFAOYSA-N 0.000 claims description 3
- JARZQLXAKQGDMK-UHFFFAOYSA-N n-ethyl-2,3-dimethylbut-2-en-1-amine Chemical compound CCNCC(C)=C(C)C JARZQLXAKQGDMK-UHFFFAOYSA-N 0.000 claims description 3
- VXUPPHCOZMHQOZ-UHFFFAOYSA-N n-ethyl-2-methylbut-2-en-1-amine Chemical compound CCNCC(C)=CC VXUPPHCOZMHQOZ-UHFFFAOYSA-N 0.000 claims description 3
- AXTLFVLHXSDZOW-UHFFFAOYSA-N n-ethyl-2-methylprop-2-en-1-amine Chemical compound CCNCC(C)=C AXTLFVLHXSDZOW-UHFFFAOYSA-N 0.000 claims description 3
- FDBRUHQKZFYGKR-UHFFFAOYSA-N n-ethyl-n,2-dimethylprop-2-en-1-amine Chemical compound CCN(C)CC(C)=C FDBRUHQKZFYGKR-UHFFFAOYSA-N 0.000 claims description 3
- JMBHWLKQSWORJX-UHFFFAOYSA-N n-ethyl-n-methylbut-2-en-1-amine Chemical compound CCN(C)CC=CC JMBHWLKQSWORJX-UHFFFAOYSA-N 0.000 claims description 3
- LQVWXFHNYICENT-UHFFFAOYSA-N n-ethyl-n-methylprop-2-en-1-amine Chemical compound CCN(C)CC=C LQVWXFHNYICENT-UHFFFAOYSA-N 0.000 claims description 3
- CJQBPKXBGUJQRP-UHFFFAOYSA-N n-ethylbut-2-en-1-amine Chemical compound CCNCC=CC CJQBPKXBGUJQRP-UHFFFAOYSA-N 0.000 claims description 3
- PUUULGNNRPBVBA-UHFFFAOYSA-N n-ethylprop-2-en-1-amine Chemical compound CCNCC=C PUUULGNNRPBVBA-UHFFFAOYSA-N 0.000 claims description 3
- UUBPFQGETKBNFO-UHFFFAOYSA-N n-methylbut-2-en-1-amine Chemical compound CNCC=CC UUBPFQGETKBNFO-UHFFFAOYSA-N 0.000 claims description 3
- IOXXVNYDGIXMIP-UHFFFAOYSA-N n-methylprop-2-en-1-amine Chemical compound CNCC=C IOXXVNYDGIXMIP-UHFFFAOYSA-N 0.000 claims description 3
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims description 3
- JGTNAGYHADQMCM-UHFFFAOYSA-N perfluorobutanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-N 0.000 claims description 3
- YPJUNDFVDDCYIH-UHFFFAOYSA-N perfluorobutyric acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)F YPJUNDFVDDCYIH-UHFFFAOYSA-N 0.000 claims description 3
- CXGONMQFMIYUJR-UHFFFAOYSA-N perfluorododecanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CXGONMQFMIYUJR-UHFFFAOYSA-N 0.000 claims description 3
- ZWBAMYVPMDSJGQ-UHFFFAOYSA-N perfluoroheptanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ZWBAMYVPMDSJGQ-UHFFFAOYSA-N 0.000 claims description 3
- QZHDEAJFRJCDMF-UHFFFAOYSA-N perfluorohexanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F QZHDEAJFRJCDMF-UHFFFAOYSA-N 0.000 claims description 3
- UZUFPBIDKMEQEQ-UHFFFAOYSA-N perfluorononanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F UZUFPBIDKMEQEQ-UHFFFAOYSA-N 0.000 claims description 3
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 claims description 3
- SNGREZUHAYWORS-UHFFFAOYSA-N perfluorooctanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SNGREZUHAYWORS-UHFFFAOYSA-N 0.000 claims description 3
- CXZGQIAOTKWCDB-UHFFFAOYSA-N perfluoropentanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CXZGQIAOTKWCDB-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- SIDINRCMMRKXGQ-UHFFFAOYSA-N perfluoroundecanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SIDINRCMMRKXGQ-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 239000012756 surface treatment agent Substances 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000005191 phase separation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000003377 acid catalyst Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
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- XCENPWBBAXQVCG-UHFFFAOYSA-N 4-phenylpiperidine-4-carbaldehyde Chemical compound C=1C=CC=CC=1C1(C=O)CCNCC1 XCENPWBBAXQVCG-UHFFFAOYSA-N 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
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- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
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- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
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- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- UQXHPNYCPAAXSS-UHFFFAOYSA-N 2-fluoroundecanoic acid Chemical compound CCCCCCCCCC(F)C(O)=O UQXHPNYCPAAXSS-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
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- C09K3/00—Materials not provided for elsewhere
- C09K3/18—Materials not provided for elsewhere for application to surfaces to minimize adherence of ice, mist or water thereto; Thawing or antifreeze materials for application to surfaces
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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Abstract
本發明係提供一種對於半導體基板材料賦予撥醇性之液體組成物及利用該液體組成物的半導體基板之表面處理方法, 該液體組成物包含界面活性劑(A)0.01~15質量%,以及化合物(B)0.0001~20質量%; 該界面活性劑(A)具有式(1)表示之取代基及陰離子性親水基; [化1] 式中,n為3以上20以下之整數; 化合物(B)之重量平均分子量為200以上500000以下,每1g具有4mmol以上30mmol以下之胺基,且係選自於由聚乙亞胺、及具有式(2)或(3)表示之取代基之化合物構成之群組; [化2] 式中,R1
及R2
各自獨立地表示氫或碳數1~6之烷基、烯基、炔基或芳基; [化3] 式中,R3
及R4
各自獨立地為氫或碳數1~6之烷基、烯基、炔基或芳基; X-
為氟化物離子、氯化物離子、溴化物離子、碘化物離子、氟硼酸離子、磷酸離子、乙酸離子、三氟乙酸離子、硫酸離子、硫酸氫離子、甲烷硫酸離子、氫氧化物離子、過氯酸離子或硝酸離子。
Description
本發明係關於對於半導體基板材料賦予撥醇性的液體組成物及利用該液體組成物的半導體基板之表面處理方法。
半導體元件之製造步驟中,有於半導體基板之表面形成微細之凹凸的步驟。該微細之凹凸一般是藉由如下之方法形成。於平坦地沉積而得之半導體基板材料之表面均勻地塗布光阻劑來設置感光層,對其實施選擇性之曝光及顯影處理來製作期望之光阻劑圖案。然後,藉由將該光阻劑圖案作為遮罩對於欲形成凹凸之半導體基板材料施行乾式蝕刻處理來於該薄膜形成期望之圖案。之後,使用剝離液及清洗液將因為光阻劑圖案及乾式蝕刻處理所產生之殘留物完全地除去。而,為了從表面去除該剝離液及清洗液,以純水進行沖洗。將基板高速旋轉從半導體基板除去該純水來使其乾燥。
因為設計規則之微細化的進展,微小凹凸圖案之高度的增加及佈線寬度變窄而使其縱橫比(aspect ratio)增大。若於如此之高縱橫比的圖案使用水進行沖洗,有時會因為水之毛細管力導致圖案崩塌。毛細管力與表面張力成比例。因此,為了解決該問題,藉由表面張力比水小的異丙醇(以下稱為「IPA」)進行沖洗。然而,例如在微細凹凸圖案之高度係500nm,線寬度係20nm之縱橫比(圖案高度/佈線寬度)係25之如此高的值時,即使使用IPA進行沖洗有時也會有產生圖案崩塌的情況。因此,如此單以IPA處理並不令人滿意。
就解決該圖案崩塌問題之方法而言,有藉由將圖案表面疏水化,使圖案與水之接觸角接近90度來防止水沖洗時的圖案崩塌之方法。
然而,因為圖案有微小之凹凸,接觸角會受表面凹凸之影響,即使在平坦面使純水之接觸角成為90度,在實際的圖案仍無法讓涉及崩塌的力完全消失。此外,在圖案也有起因於表面張力的力作用,因為該力係以接觸角之正弦與表面張力的積來表示,若使接觸角成為90度則會使該力變大。因此,於近年之以往所沒有之高縱橫比的圖案,僅進行如上述之圖案表面的疏水化處理變得無法防止圖案之崩塌。
為了解決該問題,考慮使用表面張力比水小之醇等,例如IPA來進行清洗,而對於為了即使使用IPA仍可防止崩塌之使IPA與圖案的接觸角變大的撥IPA技術有強烈需求。
專利文獻1、專利文獻2及專利文獻3中,提出使用藥液將半導體基板進行接液處理,並使用純水除去該藥液後,於該半導體基板表面形成撥水性保護膜,之後使用純水沖洗該半導體基板並使其乾燥的半導體基板之表面處理方法。此外,就形成撥水性保護膜之藥劑而言,係提出矽烷系化合物。
專利文獻4中,提出一種可使用於各種基材的表面處理劑,該表面處理劑具有具氟化碳基之矽烷系化合物、酸觸媒、液狀或固體狀介質。
專利文獻5中,就可使用於各種基材之表面處理之具有撥IPA性能之表面處理劑而言,提出一種表面處理劑,該表面處理劑含有:具碳數6之直鏈狀之全氟烷基之丙烯酸酯與具碳數6之直鏈狀之全氟烷基之甲基丙烯酸酯的共聚物。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2010-114414號公報 [專利文獻2]日本特開2014-197638號公報 [專利文獻3]日本特開2014-197571號公報 [專利文獻4]日本特開平9-31449號公報 [專利文獻5]國際公開第2010/113646號
[發明所欲解決之課題] 然而,專利文獻1~5之發明仍留有如以下所述之技術上的課題。 專利文獻1中記載包含六甲基二矽氮烷或三甲基矽基二甲胺的半導體基板之表面處理方法。此外,專利文獻2中揭示使用辛基二甲基矽基二甲胺或三甲基矽基二甲胺,專利文獻3中提出使用四甲基矽烷,專利文獻4中提出使用全氟癸基三甲氧基矽烷等矽烷系化合物來形成撥水保護膜之方法。然而,於此等之文獻中揭示的撥水性保護膜,無法使半導體基板上形成之各種材料與醇類的接觸角為充分大,於本案之目的中無法使用(例如比較例23~50)。 藉由將專利文獻5記載之含共聚物之表面處理劑塗布於半導體基板表面上並進行乾燥可對於半導體基板表面賦予撥油性。然而,不乾燥表面處理劑而使用IPA進行沖洗處理時,因為半導體基板上之該表面處理劑沒有硬化而會流出,無法形成具有撥油性之膜(例如比較例51~54)。 相反地,若乾燥該表面處理劑,因為於半導體基板上形成厚的膜,有無法發揮作為半導體之原本功能之虞。
在如此之狀況下,期望提供一種對於組成半導體基板之各種材料的表面賦予撥醇性的液體組成物,及利用該液體組成物的半導體基板之表面處理方法。 [解決課題之手段]
本發明係提供解決上述課題之方法。本發明包含以下所示之液體組成物及半導體基板之表面處理方法。 1.一種液體組成物,係對於半導體基板材料賦予撥醇性之液體組成物,其特徵在於包含: 下述之界面活性劑(A)0.01~15質量%,以及 重量平均分子量為200以上500000以下,且每1g具有4mmol以上30mmol以下之胺基的下述化合物(B)0.0001~20質量%; 界面活性劑(A)係具有下述通式(1)表示之取代基及陰離子性親水基的界面活性劑; 化合物(B)係具有聚乙亞胺、或下述通式(2)或下述通式(3)表示之取代基的化合物; 【化1】(1) n為3以上20以下之整數; 【化2】(2) R1
及R2
表示氫或碳數1~6之烷基、烯基、炔基或芳基; 【化3】(3) R3
及R4
表示氫或碳數1~6之烷基、烯基、炔基或芳基; X-
為氟化物離子、氯化物離子、溴化物離子、碘化物離子、氟硼酸離子、磷酸離子、乙酸離子、三氟乙酸離子、硫酸離子、硫酸氫離子、甲烷硫酸離子、氫氧化物離子、過氯酸離子或硝酸離子。 2.如第1項之液體組成物,其中,該陰離子性親水基為下述式(4)、(5)、(6)或(7)表示之結構; 【化4】(4) R5
及R6
表示氫或碳數1~6之烷基、烯基、炔基或芳基; 【化5】(5) R7
及R8
表示氫或碳數1~6之烷基、烯基、炔基或芳基; 【化6】(6) Z表示金屬、氫或4級胺; 【化7】(7) Z表示金屬、氫或4級胺。 3.如第1項之液體組成物,其中,重量平均分子量為200以上500000以下,每1g具有4mmol以上30mmol以下之胺基的上述化合物(B)為選自於次乙亞胺、丙-2-烯-1-胺、N-甲基丙-2-烯-1-胺、N,N-二甲基丙-2-烯-1-胺、N-乙基丙-2-烯-1-胺、N-乙基-N-甲基丙-2-烯-1-胺、N,N-二乙基丙-2-烯-1-胺、2-甲基丙-2-烯-1-胺、N,2-二甲基丙-2-烯-1-胺、N,N,2-三甲基丙-2-烯-1-胺、N-乙基-2-甲基丙-2-烯-1-胺、N-乙基-N,2-二甲基丙-2-烯-1-胺、N,N-二乙基-2-甲基丙-2-烯-1-胺、丁-2-烯-1-胺、N-甲基丁-2-烯-1-胺、N,N-二甲基丁-2-烯-1-胺、N-乙基丁-2-烯-1-胺、N-乙基-N-甲基丁-2-烯-1-胺、N,N-二乙基丁-2-烯-1-胺、2-甲基丁-2-烯-1-胺、N,2-二甲基丁-2-烯-1-胺、N,N,2-三甲基丁-2-烯-1-胺、N-乙基-2-甲基丁-2-烯-1-胺、N-乙基-N,2-二甲基丁-2-烯-1-胺、N,N-二乙基-2-甲基丁-2-烯-1-胺、2,3-二甲基丁-2-烯-1-胺、N,2,3-三甲基丁-2-烯-1-胺、N,N,2,3-四甲基丁-2-烯-1-胺、N-乙基-2,3-二甲基丁-2-烯-1-胺、N-乙基-N,2,3-三甲基丁-2-烯-1-胺、N,N-二乙基-2,3-二甲基丁-2-烯-1-胺、二烯丙胺、N-烯丙基-N-甲基丙-2-烯-1-胺、N-烯丙基-N-乙基丙-2-烯-1-胺、N-烯丙基-N,N-二甲基丙-2-烯-1-胺、及該等之鹽酸鹽、硫酸鹽、磷酸鹽、硝酸鹽或二氧化硫之中之1種或2種以上之化合物作為原料單體之均聚物或共聚物。 4.如第1項之液體組成物,其中,界面活性劑(A)係N,N-二乙基-N’,N’-雙(2-羥基-3-全氟己基丙基)丙烷-1,3-二胺二氧化物、N,N-二乙基-N’,N’-雙(2-羥基-3-全氟戊基丙基)丙烷-1,3-二胺二氧化物、N,N-二乙基-N’,N’-雙(2-羥基-3-全氟丁基丙基)丙烷-1,3-二胺二氧化物、N,N-二甲基-N’,N’-雙(2-羥基-3-全氟己基丙基)丙烷-1,3-二胺二氧化物、N,N-二甲基-N’,N’-雙(2-羥基-3-全氟戊基丙基)丙烷-1,3-二胺二氧化物、N,N-二甲基-N’,N’-雙(2-羥基-3-全氟丁基丙基)丙烷-1,3-二胺二氧化物、全氟十六烷酸、全氟十五烷酸、全氟十四烷酸、全氟十三烷酸、全氟十二烷酸、全氟十一烷酸、全氟癸酸、全氟壬酸、全氟辛酸、全氟庚酸、全氟己酸、全氟戊酸、全氟丁酸、全氟辛磺酸、全氟庚磺酸、全氟己磺酸、全氟戊磺酸、全氟丁磺酸、全氟丙磺酸、全氟辛基膦酸、全氟庚基膦酸、全氟己基膦酸、全氟戊基膦酸、全氟丁基膦酸、全氟丙基膦酸、(1H,1H,2H,2H-全氟癸基)膦酸、(1H,1H,2H,2H-全氟壬基)膦酸、(1H,1H,2H,2H-全氟辛基)膦酸、(1H,1H,2H,2H-全氟庚基)膦酸、(1H,1H,2H,2H-全氟己基)膦酸、(1H,1H,2H,2H-全氟戊基)膦酸、或下述式(8)~(11)表示之化合物及該等之金屬鹽、銨鹽; 【化8】 [CF3
(CF2
)m
(CH2
)2
OCH2
CH(OH)CH2
O]2
(O)POH (8) m為2至7之整數; 【化9】 [CF3
(CF2
)k
CH(OH)CH2
O]2
(O)POH (9) k為2至7之整數; 【化10】 [CF3
(CF2
)j
(CH2
)2
OCH2
CH(OH)CH2
O](O)P(OH)2
(10) j為2至7之整數; 【化11】 [CF3
(CF2
)h
CH(OH)CH2
O](O)P(OH)2
(11) h為2至7之整數。 5.如第1項之液體組成物,其中,該撥醇性所指的醇係異丙醇。 6.如第1項之液體組成物,其中,該半導體基板材料係選自於矽、鋁、鋁銅合金、鉭、鎳、鎢、鈷、鉬、鈦、鋯、釕、鉿、鉑、矽鍺、鍺、及該等之氧化物、氮化物或碳化物中之1種以上。 7.一種半導體基板之表面處理方法,係使液體組成物與半導體基板接觸,於半導體基板上形成撥醇性膜之半導體基板之表面處理方法,其特徵在於,該液體組成物含有上述界面活性劑(A)0.01~15質量%,以及重量平均分子量為200以上500000以下,每1g具有4mmol以上30mmol以下之胺基之上述化合物(B)0.0001~20質量%; 而,界面活性劑(A)具有上述通式(1)表示之取代基及陰離子性親水基; 化合物(B)具有聚乙亞胺、或以上述通式(2)或上述通式(3)表示之取代基。 8.如第7項之半導體基板之表面處理方法,其中,該撥醇性係撥異丙醇性。 9.如第7項之半導體基板之表面處理方法,其中,該半導體基板係選自矽、鋁、鋁銅合金、鉭、鎳、鎢、鈷、鉬、鈦、鋯、釕、鉿、鉑、矽鍺或鍺、及該等之氧化物、氮化物或碳化物之中之1種以上。 [發明之效果]
根據本發明之理想態樣,藉由使用本發明之液體組成物及半導體基板之表面處理方法,於半導體元件之製造步驟中,可防止在半導體基板上形成之具有高縱橫比的各種材料圖案的崩塌,可以良好的產率製造高精度、高品質的半導體元件。
本發明之液體組成物包含具有式(1)表示之取代基及陰離子性親水基的界面活性劑(A)、及選自於由具有式(2)或式(3)表示之取代基的化合物及聚乙亞胺構成之群組中之化合物(B)。 也就是說,本發明之液體組成物係對於半導體基板材料賦予撥醇性之液體組成物,其特徵在於包含界面活性劑(A)0.01~15質量%,以及化合物(B)0.0001~20質量% 該界面活性劑(A)具有式(1)表示之取代基及陰離子性親水基 式(1): 【化12】(1) 式中,n為3以上20以下之整數。 化合物(B)之重量平均分子量為200以上500000以下,每1g具有4mmol以上30mmol以下之胺基,且係選自於由聚乙亞胺、及具有式(2)或(3)表示之取代基之化合物構成之群組; 【化13】(2) 式中,R1
及R2
各自獨立地表示氫或碳數1~6之烷基、烯基、炔基或芳基; 【化14】(3) 式中,R3
及R4
各自獨立地為氫或碳數1~6之烷基、烯基、炔基或芳基; X-
為氟化物離子、氯化物離子、溴化物離子、碘化物離子、氟硼酸離子、磷酸離子、乙酸離子、三氟乙酸離子、硫酸離子、硫酸氫離子、甲烷硫酸離子、氫氧化物離子、過氯酸離子或硝酸離子。
雖然尚不明瞭本發明之液體組成物對於半導體基板表面產生撥醇性之機制,據認為係本發明之液體組成物中使用之具有式(1)表示之取代基及陰離子性親水基的界面活性劑(A)及選自於由式(2)或式(3)表示之取代基之化合物及聚乙亞胺構成之群組之化合物(B)吸附於半導體基板材料表面而展現撥醇性。此時撥醇性之評價係將經與本發明之液體組成物進行接觸處理後的材料表面跟醇之間具有接觸角為30°以上者判定為合格。
本發明中使用之界面活性劑(A)所具有的上述陰離子性親水基係具有式(4)、(5)、(6)或(7)表示之結構。 【化15】(4) 式中,R5
及R6
各自獨立地為氫或碳數1~6之烷基、烯基、炔基或芳基; 【化16】(5) 式中,R7
及R8
各自獨立地為氫或碳數1~6之烷基、烯基、炔基或芳基; 【化17】(6) 式中,Z為金屬、氫或4級胺; 【化18】(7) 式中,Z為金屬、氫或4級胺; 根據本發明之理想態樣,上述式中R5
、R6
、R7
及R8
係各自獨立為氫或碳數1~6之烷基,尤其宜為甲基、乙基、丙基,更宜為氫。 此外,Z宜為氫或4級胺,更宜為氫。
本發明中使用之具有式(1)表示之取代基及陰離子性親水基之界面活性劑(A)中,式(1)表示之取代基的碳數n的下限值為3以上,宜為4以上,尤其宜為6以上,上限值為20以下,宜為12以下,尤其宜為8以下。
本發明之液體組成物中之具有式(1)表示之取代基及陰離子性親水基的界面活性劑(A)的濃度範圍為0.01~20質量%,宜為0.05質量%以上,更宜為0.1質量%以上,宜為15質量%以下,更宜為5質量%以下。其中,本發明之液體組成物中界面活性劑(A)的濃度範圍宜為0.05~15質量%,更宜為0.1~5質量%。 此外,在此等化合物對於水之溶解性不夠充分而相分離之情況,可加入醇等有機溶劑。此外,可加入通常使用之酸、鹼來彌補溶解性。此外,於沒有相分離而只是白濁之情況,可在不妨害該處理液之效果的範圍內使用,亦可伴隨著攪拌來使該處理液成為均勻之狀態來使用。此外,為了避免處理液之白濁,也可與上述同樣地在加入醇等有機溶劑或酸、鹼之後使用。
就本發明中使用之具有式(1)表示之取代基及陰離子性親水基之界面活性劑(A)而言,可舉例如N,N-二乙基-N’,N’-雙(2-羥基-3-全氟己基丙基)丙烷-1,3-二胺二氧化物、N,N-二乙基-N’,N’-雙(2-羥基-3-全氟戊基丙基)丙烷-1,3-二胺二氧化物、N,N-二乙基-N’,N’-雙(2-羥基-3-全氟丁基丙基)丙烷-1,3-二胺二氧化物、N,N-二甲基-N’,N’-雙(2-羥基-3-全氟己基丙基)丙烷-1,3-二胺二氧化物、N,N-二甲基-N’,N’-雙(2-羥基-3-全氟戊基丙基)丙烷-1,3-二胺二氧化物、N,N-二甲基-N’,N’-雙(2-羥基-3-全氟丁基丙基)丙烷-1,3-二胺二氧化物、全氟十六烷酸、全氟十五烷酸、全氟十四烷酸、全氟十三烷酸、全氟十二烷酸、全氟十一烷酸、全氟癸酸、全氟壬酸、全氟辛酸、全氟庚酸、全氟己酸、全氟戊酸、全氟丁酸、全氟辛磺酸、全氟庚磺酸、全氟己磺酸、全氟戊磺酸、全氟丁磺酸、全氟丙磺酸、全氟辛基膦酸、全氟庚基膦酸、全氟己基膦酸、全氟戊基膦酸、全氟丁基膦酸、全氟丙基膦酸、(1H,1H,2H,2H-全氟癸基)膦酸、(1H,1H,2H,2H-全氟壬基)膦酸、(1H,1H,2H,2H-全氟辛基)膦酸、(1H,1H,2H,2H-全氟庚基)膦酸、(1H,1H,2H,2H-全氟己基)膦酸、(1H,1H,2H,2H-全氟戊基)膦酸、或式(8)~(11)表示之化合物及該等之金屬鹽、銨鹽; 【化19】 [CF3
(CF2
)m
(CH2
)2
OCH2
CH(OH)CH2
O]2
(O)POH (8) 式中,m為2至7之整數; 【化20】 [CF3
(CF2
)k
CH(OH)CH2
O]2
(O)POH (9) 式中,k為2至7之整數; 【化21】 [CF3
(CF2
)j
(CH2
)2
OCH2
CH(OH)CH2
O](O)P(OH)2
(10) 式中,j為2至7之整數; 【化22】 [CF3
(CF2
)h
CH(OH)CH2
O](O)P(OH)2
(11) 式中,h為2至7之整數; 但並不僅限定為此等,若可達成本案發明之目的則亦可使用此等以外之化合物。 界面活性劑(A)可單獨使用1種也可組合2種以上使用。
本發明中使用之選自於由具有式(2)或式(3)表示之取代基之化合物及聚乙亞胺構成之群組的化合物(B),化合物每1g具有4mmol以上30mmol以下之胺基。其中,此處所述「胺基」係指式(2)或式(3)表示之胺基。化合物(B)中胺基之下限值宜為化合物每1g係5mmol以上,尤其6mmol以上,上限值為化合物每1g係28mmol以下,尤其25mmol以下,但並沒有特別存在必要之上限值。
本發明中使用之具有式(2)或式(3)表示之取代基之化合物或聚乙亞胺的重量平均分子量之下限值係200以上,宜為300以上,上限值為500000以下,宜為200000以下,但並沒有特別存在必要之上限值。此處的「重量平均分子量」係藉由凝膠滲透層析儀(GPC)進行測定之標準聚苯乙烯換算之重量平均分子量。
本發明中使用之選自於由具有式(2)或式(3)表示之取代基之化合物及聚乙亞胺構成之群組中的化合物(B)的濃度範圍,總和為0.0001~20質量%,宜為0.001質量%以上,更宜為0.01質量%以上,宜為10質量%以下,更宜為5質量%以下。其中,本發明之液體組成物中化合物(B)之濃度範圍的總和宜為0.001~10質量%,更宜為0.01~5質量%。 此外,此等之化合物之對於水的溶解性不夠充分而相分離之情況,可加入醇等有機溶劑。此外,可加入通常使用之酸、鹼來彌補溶解性。此外,沒有相分離而只是白濁之情況,可在不妨害該處理液之效果的範圍內使用,亦可伴隨著攪拌使該處理液成為均勻之狀態來使用。此外,為了避免處理液之白濁,也可與上述同樣地在加入醇等有機溶劑或酸、鹼之後來使用。
就重量平均分子量係200以上500000以下且每1g具有4mmol以上30mmol以下之胺基之具有上述式(2)或式(3)表示之取代基之化合物(B)而言,例如,可列舉將選自於丙-2-烯-1-胺、N-甲基丙-2-烯-1-胺、N,N-二甲基丙-2-烯-1-胺、N-乙基丙-2-烯-1-胺、N-乙基-N-甲基丙-2-烯-1-胺、N,N-二乙基丙-2-烯-1-胺、2-甲基丙-2-烯-1-胺、N,2-二甲基丙-2-烯-1-胺、N,N,2-三甲基丙-2-烯-1-胺、N-乙基-2-甲基丙-2-烯-1-胺、N-乙基-N,2-二甲基丙-2-烯-1-胺、N,N-二乙基-2-甲基丙-2-烯-1-胺、丁-2-烯-1-胺、N-甲基丁-2-烯-1-胺、N,N-二甲基丁-2-烯-1-胺、N-乙基丁-2-烯-1-胺、N-乙基-N-甲基丁-2-烯-1-胺、N,N-二乙基丁-2-烯-1-胺、2-甲基丁-2-烯-1-胺、N,2-二甲基丁-2-烯-1-胺、N,N,2-三甲基丁-2-烯-1-胺、N-乙基-2-甲基丁-2-烯-1-胺、N-乙基-N,2-二甲基丁-2-烯-1-胺、N,N-二乙基-2-甲基丁-2-烯-1-胺、2,3-二甲基丁-2-烯-1-胺、N,2,3-三甲基丁-2-烯-1-胺、N,N,2,3-四甲基丁-2-烯-1-胺、N-乙基-2,3-二甲基丁-2-烯-1-胺、N-乙基-N,2,3-三甲基丁-2-烯-1-胺、N,N-二乙基-2,3-二甲基丁-2-烯-1-胺、二烯丙胺、N-烯丙基-N-甲基丙-2-烯-1-胺、N-烯丙基-N-乙基丙-2-烯-1-胺、N-烯丙基-N,N-二甲基丙-2-烯-1-胺、及該等之鹽酸鹽、硫酸鹽、磷酸鹽、硝酸鹽或二氧化硫之中之1種或2種以上的化合物作為原料單體之均聚物或共聚物,但並不僅限定為此等,若能達成本案之目的亦可使用其他化合物。 其中,就化合物(B)而言,宜為將選自於丙-2-烯-1-胺、N,N-二甲基丙-2-烯-1-胺、二烯丙胺、及該等之鹽酸鹽、硫酸鹽、磷酸鹽、硝酸鹽或二氧化硫之中之1種或2種以上之化合物作為原料單體之均聚物或共聚物。 化合物(B)可單獨使用1種,也可組合使用2種以上。
藉由以本發明之液體組成物進行表面處理,可對於構成半導體基板之各種材料上賦予撥醇性。就本發明之液體組成物可展示撥醇性之醇而言並沒有特別之限制,甲醇、乙醇、1-丁醇、1-丙醇、IPA等較理想,尤其是IPA較理想。
就藉由以本發明之液體組成物進行表面處理來賦予撥醇性之半導體基板的材料而言並沒有特別之限制,可列舉使用矽、鋁、鋁銅合金、鉭、鎳、鎢、鈷、鉬、鈦、鋯、釕、鉿、鉑、矽鍺、鍺、或該等之氧化物、氮化物或碳化物之1種以上而成者較理想。
本發明之液體組成物除了界面活性劑(A)及化合物(B)以外還包含溶劑(剩餘部分)。就溶劑而言,可列舉水、醇或此等之組合。就醇而言,宜為甲醇、乙醇、1-丁醇、1-丙醇、IPA、乙二醇、丙二醇、甘油、二乙二醇、木糖醇、山梨醇、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、二丙二醇單丙醚等,尤其宜為IPA。 本發明之液體組成物中根據期望在不妨害本發明之目的的範圍內可摻合以往半導體用液體組成物中所使用之添加劑。可添加例如消泡劑等。
藉由使本發明之液體組成物接觸半導體基板,可對於半導體基板上賦予撥醇性。 使本發明之液體組成物接觸半導體基板之方法並沒有特別之限定。可採用例如將半導體基板浸漬於本發明之液體組成物之方法、或藉由滴加或噴灑等來與液體組成物接觸之方法等。
使用本發明之液體組成物之溫度宜為20~80℃,更宜為25~70℃之範圍,根據使用之半導體基板適當地選擇即可。 與本發明之液體組成物接觸之時間宜為0.3~20分鐘,更宜為0.5~10分鐘之範圍,根據使用之半導體基板適當地選擇即可。 使本發明之液體組成物與半導體基板接觸後,多餘的液體組成物使用IPA等醇來去除較理想。此外,於表面殘留之該醇類,係噴吹乾燥氣體等來去除較理想。藉由如此方式可對於半導體基板上賦予撥醇性。 [實施例]
以下將藉由實施例及比較例來更具體地說明本發明,但本發明並不因為此等之實施例而有任何限制。
<接觸角測定設備> 接觸角之測定係在21~28℃,濕度40~60%,使用協和界面科學(股)公司製,接觸角測定裝置DM701型。
<實驗操作> 實施例、比較例之實驗操作如以下所示。 將半導體基板材料進行製膜而得之矽晶片浸漬於表2、4、7、9或12記載之液體組成物中(浸漬溫度、浸漬時間各別記載於表3、5、8、10或13),之後以異丙醇(IPA)進行沖洗去除多餘之液體組成物。藉由噴吹乾燥氮氣以去除殘留於表面之IPA。測定進行了如此之表面處理後的基板材料與IPA的接觸角,30度以上判定為合格。
實施例1 使用由1質量%之N,N-二乙基-N’,N’-雙(2-羥基-3-全氟己基丙基)丙烷-1,3-二胺氧化物與1質量%之PAS-92(NITTOBO MEDICAL CO.,LTD.製,二烯丙胺鹽酸鹽・二氧化硫共聚物[2級胺/SO2
],重量平均分子量5000)及98質量%之水構成之液體組成物(2A),將氮化矽基板於25℃進行浸漬處理10分鐘,以IPA沖洗後使其乾燥。於該基板滴落IPA,測定其接觸角。接觸角係38度,判定為合格(參照表3)。
實施例2~37 與實施例1同樣地,如表3中所示之方式以表2之液體組成物進行表面處理後之基板材料,與IPA之接觸角皆為30度以上,具有撥醇性。
比較例1 以表4之4A的液體組成物進行表面處理後之基板材料與IPA之接觸角未達30度,可知即使為含有具有式(2)或式(3)表示之取代基的化合物的情況,在胺基比率為未達4mmol時,處理後之基板材料不會展現撥醇性。
比較例2 以表4之4B的液體組成物進行表面處理後之基板材料與IPA之接觸角未達30度,可知即使為含有具有式(2)或式(3)表示之取代基的化合物的情況,在重量平均分子量未達200時,處理後之基板材料不會展現撥醇性。
比較例3、4 以表4之4C、4D之液體組成物進行表面處理後之基板材料與IPA之接觸角未達30度,可知藉由不含有具有式(4)~式(7)表示之陰離子性親水基之界面活性劑的液體組成物所處理後之基板材料不會展現撥醇性。
比較例5 以表4之4E之液體組成物進行表面處理後之基板材料與IPA之接觸角未達30度,可知以式(1)表示之取代基的n未達3時,處理後之基板材料不會展現撥醇性。
比較例6~11 以表4之4F~4K的液體組成物進行表面處理後之基板材料與IPA之接觸角未達30度,可知不含有具有式(2)或式(3)表示之取代基之化合物或聚乙亞胺時,處理後之基板材料不會展現撥醇性。
比較例12~22 以表4之4L~4V的液體組成物進行表面處理後之基板材料與IPA之接觸角未達30度,可知不含有具有以式(1)表示之取代基及陰離子性親水基之界面活性劑時,處理後之基板材料不會展現撥醇性。
比較例23~42 將專利文獻1、專利文獻2、專利文獻3中記載之具有烷基之矽烷系化合物與本發明之效果加以比較。以表7之7A~7D的液體組成物進行表面處理後之基板材料有些與水之接觸角大,可知有時有表面被修飾之情況。但與IPA之接觸角未達30度,處理後之基板材料皆沒有撥醇性。
比較例43~50 將專利文獻4中記載之具有含氟烷基之矽烷系化合物與本發明之效果加以比較。專利文獻4中記載之發明係將具有含氟烷基之矽烷系化合物與酸觸媒之任一者或兩者進行微膠囊化,混合後,在破壞微膠囊的同時塗布於基材表面。藉此可防止從摻合到塗布這段期間之矽烷系化合物分解。因此,據認為即使是不進行微膠囊化,藉由將矽烷系化合物與酸觸媒混合並迅速地處理基板材料,亦可再現專利文獻4中記載之發明的效果。以表9之9A的液體組成物進行表面處理後之基板材料係與IPA之接觸角為未達30度,處理後之基板材料皆不具有撥醇性。
比較例51~54 將氟系塗布劑與本發明之效果加以比較。於密閉容器中各別加入各個化合物、聚合溶劑及起始劑使其各別成為表11中記載之濃度,於70℃進行反應18小時以上而獲得聚合物11A。之後將聚合物11A以溶劑稀釋成為表12記載之濃度,成為液體組成物12A。以表12之12A的液體組成物進行表面處理後之基板材料係與IPA之接觸角未達30度,處理後之基板材料皆不具有撥醇性。
【表2】
※1胺基比率 化合物每1g中含有之胺基的mmol數。 PAA-01 NITTOBO MEDICAL CO.,LTD.製 烯丙胺(自由)聚合物[單獨1級胺],重量平均分子量1600 PAA-03 NITTOBO MEDICAL CO.,LTD.製 烯丙胺(自由)聚合物[單獨1級胺],重量平均分子量3000 PAA-08 NITTOBO MEDICAL CO.,LTD.製 烯丙胺(自由)聚合物[單獨1級胺],重量平均分子量8000 PAA-HCL-05 NITTOBO MEDICAL CO.,LTD.製 烯丙胺鹽酸鹽聚合物[單獨1級胺],重量平均分子量5000 PAA-1112 NITTOBO MEDICAL CO.,LTD.製 烯丙胺・二甲基烯丙胺(自由)聚合物[1級/3級胺],重量平均分子量1000 PAS-H-1L NITTOBO MEDICAL CO.,LTD.製 二烯丙基二甲基氯化銨共聚物[單獨4級胺],重量平均分子量8500 PAS-H-10L NITTOBO MEDICAL CO.,LTD.製 二烯丙基二甲基氯化銨共聚物[單獨4級胺],重量平均分子量200,000 PAS-92 NITTOBO MEDICAL CO.,LTD.製 二烯丙胺鹽酸鹽・二氧化硫共聚物[2級胺/SO2
],重量平均分子量5000 聚乙亞胺 日本觸媒(股)公司製 次乙亞胺共聚物,重量平均分子量300 聚乙亞胺 日本觸媒(股)公司製 次乙亞胺共聚物,重量平均分子量1800 聚乙亞胺 日本觸媒(股)公司製 次乙亞胺共聚物,重量平均分子量70000
【表11】
【化23】 CH2
=CH-COO-(CH2
)2
-(CF2
)6
-F (13) 【化24】 CH2
=C(CH3
)-COO-(CH2
)2
-(CF2
)6
-F (14) 【化25】 CH2
=CH-COO-C2
H4
O-CO-C2
H4
-COOH (15)
Claims (8)
- 一種液體組成物,係對於半導體基板材料賦予撥醇性之液體組成物,包含:界面活性劑(A)0.01~15質量%,以及化合物(B)0.0001~20質量%;該界面活性劑(A)具有式(1)表示之取代基及陰離子性親水基;〔化1〕CnF2n+1─ (1)式中,n為3以上20以下之整數;化合物(B)之重量平均分子量為200以上500000以下,每1g具有4mmol以上30mmol以下之胺基,且係選自於由聚乙亞胺、及具有式(2)或(3)表示之取代基之化合物構成之群組;
- 如申請專利範圍第1項之液體組成物,其中,該化合物(B)包括將選自於由次乙亞胺、丙-2-烯-1-胺、N-甲基丙-2-烯-1-胺、N,N-二甲基丙-2-烯-1-胺、N-乙基丙-2-烯-1-胺、N-乙基-N-甲基丙-2-烯-1-胺、N,N-二乙基丙-2-烯-1-胺、2-甲基丙-2-烯-1-胺、N,2-二甲基丙-2-烯-1-胺、N,N,2-三甲基丙-2-烯-1-胺、N-乙基-2-甲基丙-2-烯-1-胺、N-乙基-N,2-二甲基丙-2-烯-1-胺、N,N-二乙基-2-甲基丙-2-烯-1-胺、丁-2-烯-1-胺、N-甲基丁-2-烯-1-胺、N,N-二甲基丁-2-烯-1-胺、N-乙基丁-2-烯-1-胺、N-乙基-N-甲基丁-2-烯-1-胺、N,N-二乙基丁-2-烯-1-胺、2-甲基丁-2-烯-1-胺、N,2-二甲基丁-2-烯-1-胺、N,N,2-三甲基丁-2-烯-1-胺、N-乙基-2-甲基丁-2-烯-1-胺、N-乙基-N,2-二甲基丁-2-烯-1-胺、N,N-二乙基-2-甲基丁-2-烯-1-胺、2,3-二甲基丁-2-烯-1-胺、N,2,3-三甲基丁-2-烯-1-胺、N,N,2,3-四甲基丁-2-烯-1-胺、N-乙基-2,3-二甲基丁-2-烯-1-胺、N-乙基-N,2,3-三甲基丁-2-烯-1-胺、N,N-二乙基-2,3-二甲基丁-2-烯-1-胺、二烯丙胺、N-烯丙基-N-甲基丙-2-烯-1-胺、N-烯丙基-N-乙基丙-2-烯-1-胺、N-烯丙基-N,N-二甲基丙-2-烯-1-胺、及該等之鹽酸鹽、硫酸鹽、磷酸鹽、硝酸鹽或二氧化硫構成之群組中之1種或2種以上之化合物作為原料單體之均聚物或共聚物。
- 如申請專利範圍第1項之液體組成物,其中,該界面活性劑(A)包括選自於由N,N-二乙基-N’,N’-雙(2-羥基-3-全氟己基丙基)丙烷-1,3-二胺二氧化物、N,N-二乙基-N’,N’-雙(2-羥基-3-全氟戊基丙基)丙烷-1,3-二胺二氧化物、N,N-二乙基-N’,N’-雙(2-羥基-3-全氟丁基丙基)丙烷-1,3-二胺二氧化物、N,N-二甲基-N’,N’-雙(2-羥基-3-全氟己基丙基)丙烷-1,3-二胺二氧化物、N,N-二甲基-N’,N’-雙(2-羥基-3-全氟戊 基丙基)丙烷-1,3-二胺二氧化物、N,N-二甲基-N’,N’-雙(2-羥基-3-全氟丁基丙基)丙烷-1,3-二胺二氧化物、全氟十六烷酸、全氟十五烷酸、全氟十四烷酸、全氟十三烷酸、全氟十二烷酸、全氟十一烷酸、全氟癸酸、全氟壬酸、全氟辛酸、全氟庚酸、全氟己酸、全氟戊酸、全氟丁酸、全氟辛磺酸、全氟庚磺酸、全氟己磺酸、全氟戊磺酸、全氟丁磺酸、全氟丙磺酸、全氟辛基膦酸、全氟庚基膦酸、全氟己基膦酸、全氟戊基膦酸、全氟丁基膦酸、全氟丙基膦酸、(1H,1H,2H,2H-全氟癸基)膦酸、(1H,1H,2H,2H-全氟壬基)膦酸、(1H,1H,2H,2H-全氟辛基)膦酸、(1H,1H,2H,2H-全氟庚基)膦酸、(1H,1H,2H,2H-全氟己基)膦酸、(1H,1H,2H,2H-全氟戊基)膦酸、或式(8)~(11)表示之化合物及該等之金屬鹽或銨鹽構成之群組中之1種或2種以上;〔化8〕[CF3(CF2)m(CH2)2OCH2CH(OH)CH2O]2(O)POH (8)式中,m為2至7之整數;〔化9〕[CF3(CF2)kCH(OH)CH2O]2(O)POH (9)式中,k為2至7之整數;〔化10〕[CF3(CF2)j(CH2)2OCH2CH(OH)CH2O](O)P(OH)2 (10)式中,j為2至7之整數;〔化11〕[CF3(CF2)hCH(OH)CH2O](O)P(OH)2 (11)式中,h為2至7之整數。
- 如申請專利範圍第1項之液體組成物,其中,該撥醇性係撥異丙醇性。
- 如申請專利範圍第1項之液體組成物,其中,該半導體基板材料包括選自於由矽、鋁、鋁銅合金、鉭、鎳、鎢、鈷、鉬、鈦、鋯、釕、鉿、鉑、矽鍺、鍺、及該等之氧化物、氮化物或碳化物構成之群組中之1種以上。
- 一種半導體基板之表面處理方法,係使液體組成物與半導體基板接觸,對於半導體基板上賦予撥醇性之半導體基板之表面處理方法,包括使用如申請專利範圍第1至3項中任一項之液體組成物之步驟。
- 如申請專利範圍第6項之半導體基板之表面處理方法,其中,該撥醇性係撥異丙醇性。
- 如申請專利範圍第6項之半導體基板之表面處理方法,其中,該半導體基板包括選自於由矽、鋁、鋁銅合金、鉭、鎳、鎢、鈷、鉬、鈦、鋯、釕、鉿、鉑、矽鍺或鍺、及該等之氧化物、氮化物或碳化物構成之群組中之1種以上。
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