TWI711270B - 與藉由模式或頻率分離之輸入相容之功率放大器介面 - Google Patents
與藉由模式或頻率分離之輸入相容之功率放大器介面 Download PDFInfo
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- TWI711270B TWI711270B TW104126769A TW104126769A TWI711270B TW I711270 B TWI711270 B TW I711270B TW 104126769 A TW104126769 A TW 104126769A TW 104126769 A TW104126769 A TW 104126769A TW I711270 B TWI711270 B TW I711270B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/401—Circuits for selecting or indicating operating mode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/225—Indexing scheme relating to amplifiers the input circuit of an amplifying stage comprising an LC-network
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/231—Indexing scheme relating to amplifiers the input of an amplifier can be switched on or off by a switch to amplify or not an input signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21109—An input signal being distributed by switching to a plurality of paralleled power amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21145—Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7215—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the input of the amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Transceivers (AREA)
- Transmitters (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462038322P | 2014-08-17 | 2014-08-17 | |
| US201462038323P | 2014-08-17 | 2014-08-17 | |
| US62/038,323 | 2014-08-17 | ||
| US62/038,322 | 2014-08-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201620245A TW201620245A (zh) | 2016-06-01 |
| TWI711270B true TWI711270B (zh) | 2020-11-21 |
Family
ID=53871959
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104126769A TWI711270B (zh) | 2014-08-17 | 2015-08-17 | 與藉由模式或頻率分離之輸入相容之功率放大器介面 |
| TW104126768A TWI672918B (zh) | 2014-08-17 | 2015-08-17 | 用於使用3g/4g線性路徑組合之2g放大之電路及方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104126768A TWI672918B (zh) | 2014-08-17 | 2015-08-17 | 用於使用3g/4g線性路徑組合之2g放大之電路及方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US20160190995A1 (enExample) |
| EP (2) | EP2988416B1 (enExample) |
| JP (4) | JP6498563B2 (enExample) |
| CN (3) | CN111585534B (enExample) |
| TW (2) | TWI711270B (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6616241B2 (ja) * | 2015-05-22 | 2019-12-04 | スカイワークス ソリューションズ,インコーポレイテッド | 電力増幅器用の並列機能を有する出力整合ネットワーク及びフィルタの結合体 |
| US10797918B2 (en) * | 2015-07-06 | 2020-10-06 | Telefonaktiebolaget Lm Ericsson (Publ) | Resource allocation for data transmission in wireless systems |
| JP2017103655A (ja) | 2015-12-02 | 2017-06-08 | 株式会社村田製作所 | 電力増幅モジュール |
| KR102468952B1 (ko) | 2016-03-07 | 2022-11-22 | 삼성전자주식회사 | 신호를 송수신하는 전자 장치 및 방법 |
| US9887673B2 (en) * | 2016-03-11 | 2018-02-06 | Intel Corporation | Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques |
| TWI729112B (zh) * | 2016-04-09 | 2021-06-01 | 美商天工方案公司 | 具有可切換雙工器的前端架構 |
| US9948350B2 (en) * | 2016-07-06 | 2018-04-17 | Qorvo Us, Inc. | Multi-mode radio frequency circuitry |
| JP2018050167A (ja) | 2016-09-21 | 2018-03-29 | 株式会社村田製作所 | 電力増幅モジュール |
| US10211784B2 (en) * | 2016-11-03 | 2019-02-19 | Nxp Usa, Inc. | Amplifier architecture reconfiguration |
| US10469033B2 (en) | 2016-11-21 | 2019-11-05 | Murata Manufacturing Co., Ltd. | Power amplification module |
| JP2018085560A (ja) | 2016-11-21 | 2018-05-31 | 株式会社村田製作所 | 電力増幅モジュール |
| US10148226B2 (en) | 2016-12-09 | 2018-12-04 | Murata Manufacturing Co., Ltd. | Bias circuit |
| JP2018098766A (ja) | 2016-12-09 | 2018-06-21 | 株式会社村田製作所 | バイアス回路 |
| EP3442120B1 (en) * | 2017-08-08 | 2021-02-03 | Rohde & Schwarz GmbH & Co. KG | Amplifier circuit and method |
| JP2019193115A (ja) * | 2018-04-25 | 2019-10-31 | 株式会社村田製作所 | 高周波増幅回路、高周波フロントエンド回路および通信装置 |
| CN108768434B (zh) * | 2018-06-06 | 2021-02-12 | 维沃移动通信有限公司 | 一种射频电路、终端及信号发射控制方法 |
| WO2019244757A1 (ja) | 2018-06-19 | 2019-12-26 | 株式会社村田製作所 | 高周波増幅回路および通信装置 |
| US10498298B1 (en) | 2018-08-10 | 2019-12-03 | Qualcomm Incorporated | Time-division duplexing using dynamic transceiver isolation |
| CN109195118A (zh) * | 2018-10-19 | 2019-01-11 | 江苏未来智慧信息科技有限公司 | 基于蓝牙的带pa单向广播通信装置及通信方法 |
| KR102581317B1 (ko) * | 2018-12-24 | 2023-09-22 | 삼성전자 주식회사 | 복수개의 안테나 어레이를 포함하는 전자 장치 |
| JP2020156026A (ja) * | 2019-03-22 | 2020-09-24 | 日本電波工業株式会社 | ログアンプ回路 |
| US11544211B2 (en) * | 2019-04-19 | 2023-01-03 | Parallel Wireless, Inc. | VRAN with PCIe fronthaul |
| KR102658531B1 (ko) * | 2019-05-15 | 2024-04-18 | 삼성전자주식회사 | 단일 안테나를 이용한 다중 대역 통신을 위한 방법 및 그 전자 장치 |
| US11469725B2 (en) | 2019-06-07 | 2022-10-11 | Skyworks Solutions, Inc. | Apparatus and methods for power amplifier output matching |
| US11463116B2 (en) * | 2019-09-20 | 2022-10-04 | Murata Manufacturing Co., Ltd. | Radio frequency module and communication device |
| KR102887576B1 (ko) * | 2020-01-23 | 2025-11-26 | 삼성전자 주식회사 | 무선 신호를 처리하기 위한 전자 장치 및 그의 동작 방법 |
| GB2601434B (en) * | 2020-06-29 | 2023-02-01 | Skyworks Solutions Inc | Dual connectivity power amplifier system |
| JP2022019088A (ja) | 2020-07-17 | 2022-01-27 | 株式会社村田製作所 | 電力増幅モジュール |
| CN116210157B (zh) * | 2020-08-13 | 2025-01-14 | 株式会社村田制作所 | 高频模块 |
| US12095430B2 (en) | 2020-08-26 | 2024-09-17 | Skyworks Solutions, Inc. | Power amplifier power management in user equipment |
| GB2603998B (en) | 2020-12-07 | 2023-04-26 | Skyworks Solutions Inc | Radio frequency front end module including common filter |
| WO2022145128A1 (ja) * | 2020-12-28 | 2022-07-07 | 株式会社村田製作所 | 高周波回路および通信装置 |
| CN113225092B (zh) * | 2021-04-14 | 2022-11-08 | 荣耀终端有限公司 | 射频放大电路和方法 |
| CN113659997B (zh) * | 2021-08-16 | 2022-12-27 | 荣耀终端有限公司 | 射频放大电路、相位调节方法、射频放大方法和终端设备 |
| US12470201B2 (en) | 2021-08-27 | 2025-11-11 | Skyworks Solutions, Inc. | Packaged multilayer piezoelectric surface acoustic wave device with conductive pillar |
| CN115882791B (zh) * | 2022-12-12 | 2025-08-01 | 深圳飞骧科技股份有限公司 | 一种电压合成式Doherty功率放大器 |
| CN119543848A (zh) * | 2025-01-22 | 2025-02-28 | 上海凡麒微电子有限公司 | 一种多频放大装置 |
| CN120149776B (zh) * | 2025-05-16 | 2025-08-12 | 深圳飞骧科技股份有限公司 | 射频功分单元、射频功分模组及射频接收系统 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6091966A (en) * | 1997-09-29 | 2000-07-18 | Ericsson, Inc. | Dual-band, dual-mode power amplifier |
| US20110207453A1 (en) * | 2010-02-25 | 2011-08-25 | Mediatek Inc. | Methods for Coordinating Radio Activities in Different Radio Access Technologies and Apparatuses Utilizing the Same |
| TW201318492A (zh) * | 2011-09-02 | 2013-05-01 | 西凱渥資訊處理科技公司 | 用於高性能射頻應用之傳輸線 |
| TW201411787A (zh) * | 2012-09-07 | 2014-03-16 | 聯發科技股份有限公司 | 射頻裝置封裝及其製造方法 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2826433B2 (ja) * | 1993-02-26 | 1998-11-18 | 日本電気株式会社 | アンテナ用二周波整合回路 |
| JP3332194B2 (ja) * | 1995-08-10 | 2002-10-07 | ソニー株式会社 | スイツチ半導体集積回路及び通信端末装置 |
| US5973557A (en) * | 1996-10-18 | 1999-10-26 | Matsushita Electric Industrial Co., Ltd. | High efficiency linear power amplifier of plural frequency bands and high efficiency power amplifier |
| US6188877B1 (en) * | 1997-07-03 | 2001-02-13 | Ericsson Inc. | Dual-band, dual-mode power amplifier with reduced power loss |
| US7212788B2 (en) * | 2002-08-13 | 2007-05-01 | Atheros Communications, Inc. | Method and apparatus for signal power loss reduction in RF communication systems |
| US7196583B2 (en) * | 2004-07-08 | 2007-03-27 | Sony United Kingdom Limited | Power control of a power amplifier |
| JP2007019939A (ja) * | 2005-07-08 | 2007-01-25 | Renesas Technology Corp | 無線通信装置及びそれを用いた携帯電話端末 |
| WO2007104055A2 (en) * | 2006-03-09 | 2007-09-13 | Skyworks Solutions, Inc. | High efficiency load insensitive power amplifier |
| DE102007019082B4 (de) * | 2007-04-23 | 2018-04-05 | Snaptrack Inc. | Frontendmodul |
| TWI346449B (en) * | 2007-08-16 | 2011-08-01 | Ind Tech Res Inst | Power amplifier circuit for multi-frequencies and multi-modes and method for operating the same |
| DE102007050606B3 (de) * | 2007-10-23 | 2009-04-23 | Epcos Ag | Schaltungsanordnung für eine Mobilfunkeinrichtung und Verfahren zum Betrieb |
| US7853290B2 (en) * | 2007-10-29 | 2010-12-14 | Infineon Technologies Ag | Transmitter arrangement |
| US7876160B2 (en) * | 2008-02-04 | 2011-01-25 | Skyworks Solutions, Inc. | Multi-mode high efficiency linear power amplifier |
| US8095092B2 (en) * | 2008-06-26 | 2012-01-10 | Infineon Technologies Ag | Power efficient transmitter with high dynamic range |
| US7619468B1 (en) * | 2008-09-30 | 2009-11-17 | Nortel Networks Limited | Doherty amplifier with drain bias supply modulation |
| US8447255B2 (en) * | 2008-10-28 | 2013-05-21 | Sony Ericsson Mobile Communications Ab | Variable impedance matching network and method for the same |
| US8457685B1 (en) * | 2009-04-20 | 2013-06-04 | Rf Micro Devices, Inc. | Method and system for increasing efficiency in a radio front-end |
| JP2010273321A (ja) * | 2009-04-22 | 2010-12-02 | Panasonic Corp | 高周波電力増幅装置及びそれを有する無線通信装置 |
| US8467738B2 (en) * | 2009-05-04 | 2013-06-18 | Rfaxis, Inc. | Multi-mode radio frequency front end module |
| US8971830B2 (en) | 2009-05-12 | 2015-03-03 | Qualcomm Incorporated | Multi-mode multi-band power amplifier module |
| US8195119B2 (en) * | 2009-05-13 | 2012-06-05 | Qualcomm, Incorporated | Switchable input pair operational amplifiers |
| US8750810B2 (en) * | 2009-07-24 | 2014-06-10 | Qualcomm Incorporated | Power amplifier with switched output matching for multi-mode operation |
| JP5370097B2 (ja) | 2009-11-24 | 2013-12-18 | 富士通株式会社 | 通信端末装置、通信回路及び通信方法 |
| JP5563668B2 (ja) | 2009-12-03 | 2014-07-30 | エプコス アクチエンゲゼルシャフト | フロントエンド回路 |
| US20120202561A1 (en) * | 2011-02-07 | 2012-08-09 | Qualcomm Incorporated | Cdma transceiver with cdma diversity receiver path shared with time duplexed receiver |
| JP5915657B2 (ja) * | 2011-08-23 | 2016-05-11 | 日本電気株式会社 | 送信機 |
| US9660687B2 (en) | 2011-09-22 | 2017-05-23 | Qualcomm Incorporated | Front-end circuit for band aggregation modes |
| US8634782B2 (en) * | 2011-10-14 | 2014-01-21 | Qualcomm Incorporated | Multi-antenna wireless device with power combining power amplifiers |
| CN102404879B (zh) * | 2011-11-04 | 2016-04-13 | 惠州Tcl移动通信有限公司 | 一种移动通讯终端 |
| US9143125B2 (en) * | 2011-11-09 | 2015-09-22 | Skyworks Solutions, Inc. | Radio-frequency switches having extended termination bandwidth and related circuits, modules, methods, and systems |
| CN103178791A (zh) * | 2011-12-26 | 2013-06-26 | 深圳富泰宏精密工业有限公司 | 功率放大电路及具有该功率放大电路的无线通信装置 |
| WO2013155494A1 (en) * | 2012-04-12 | 2013-10-17 | Skyworks Solutions, Inc. | Systems and methods related to improved isolation between transmit and receive radio-frequency signals |
| CN202889657U (zh) * | 2012-10-25 | 2013-04-17 | 宏达国际电子股份有限公司 | 双模双待双通的移动通讯装置 |
| US9130600B2 (en) * | 2012-12-18 | 2015-09-08 | Broadcom Corporation | Receiver architecture with reconfigurable on-chip matching for wideband operation and off-chip matching for low-power operation |
| US9337991B2 (en) * | 2013-04-19 | 2016-05-10 | Mediatek Singapore Pte. Ltd. | Wireless communication unit, radio frequency module and method therefor |
| US9065541B2 (en) * | 2013-09-10 | 2015-06-23 | Broadcom Corporation | Configurable wireless communication device with configurable front-end |
| US9276552B2 (en) * | 2013-09-26 | 2016-03-01 | Rf Micro Devices, Inc. | Output match directional coupler |
| KR102428141B1 (ko) * | 2014-02-25 | 2022-08-02 | 스카이워크스 솔루션즈, 인코포레이티드 | 향상된 무선-주파수 모듈들에 관한 시스템들, 디바이스들 및 방법들 |
| JP2015160631A (ja) | 2014-02-27 | 2015-09-07 | 凸版印刷株式会社 | 電子レンジ加熱用包装容器 |
| EP3164943A2 (en) * | 2014-07-01 | 2017-05-10 | Sofant Technologies Ltd | Wireless communications apparatus |
-
2015
- 2015-08-17 EP EP15181220.3A patent/EP2988416B1/en active Active
- 2015-08-17 US US14/827,543 patent/US20160190995A1/en not_active Abandoned
- 2015-08-17 EP EP15181239.3A patent/EP2988417B1/en active Active
- 2015-08-17 JP JP2015160631A patent/JP6498563B2/ja active Active
- 2015-08-17 CN CN202010458421.4A patent/CN111585534B/zh active Active
- 2015-08-17 CN CN201510505346.1A patent/CN105375968B/zh active Active
- 2015-08-17 CN CN201510504543.1A patent/CN105376660B/zh active Active
- 2015-08-17 TW TW104126769A patent/TWI711270B/zh active
- 2015-08-17 TW TW104126768A patent/TWI672918B/zh active
- 2015-08-17 US US14/827,534 patent/US10153736B2/en active Active
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- 2018-12-04 US US16/208,873 patent/US11323073B2/en active Active
-
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- 2019-03-13 JP JP2019046251A patent/JP6890146B6/ja active Active
-
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- 2021-06-15 JP JP2021099599A patent/JP2021153326A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6091966A (en) * | 1997-09-29 | 2000-07-18 | Ericsson, Inc. | Dual-band, dual-mode power amplifier |
| US20110207453A1 (en) * | 2010-02-25 | 2011-08-25 | Mediatek Inc. | Methods for Coordinating Radio Activities in Different Radio Access Technologies and Apparatuses Utilizing the Same |
| TW201318492A (zh) * | 2011-09-02 | 2013-05-01 | 西凱渥資訊處理科技公司 | 用於高性能射頻應用之傳輸線 |
| TW201411787A (zh) * | 2012-09-07 | 2014-03-16 | 聯發科技股份有限公司 | 射頻裝置封裝及其製造方法 |
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| CN105375968A (zh) | 2016-03-02 |
| JP6498563B2 (ja) | 2019-04-10 |
| JP2016042700A (ja) | 2016-03-31 |
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| TWI672918B (zh) | 2019-09-21 |
| CN105375968B (zh) | 2020-05-22 |
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| US20160191105A1 (en) | 2016-06-30 |
| JP6890146B6 (ja) | 2021-07-14 |
| EP2988416A1 (en) | 2016-02-24 |
| JP6890146B2 (ja) | 2021-06-18 |
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| JP2016042699A (ja) | 2016-03-31 |
| US20160190995A1 (en) | 2016-06-30 |
| CN111585534B (zh) | 2024-03-19 |
| CN111585534A (zh) | 2020-08-25 |
| TW201613286A (en) | 2016-04-01 |
| JP2019134460A (ja) | 2019-08-08 |
| EP2988416B1 (en) | 2019-11-06 |
| CN105376660B (zh) | 2020-10-30 |
| EP2988417B1 (en) | 2020-05-13 |
| US20190386616A1 (en) | 2019-12-19 |
| HK1216471A1 (zh) | 2016-11-11 |
| US10153736B2 (en) | 2018-12-11 |
| CN105376660A (zh) | 2016-03-02 |
| JP2021153326A (ja) | 2021-09-30 |
| US11323073B2 (en) | 2022-05-03 |
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