TWI710038B - 基板變形偵測和校正 - Google Patents

基板變形偵測和校正 Download PDF

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Publication number
TWI710038B
TWI710038B TW108113044A TW108113044A TWI710038B TW I710038 B TWI710038 B TW I710038B TW 108113044 A TW108113044 A TW 108113044A TW 108113044 A TW108113044 A TW 108113044A TW I710038 B TWI710038 B TW I710038B
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TW
Taiwan
Prior art keywords
substrate
processing chamber
bending
processing
fingerprint
Prior art date
Application number
TW108113044A
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English (en)
Chinese (zh)
Other versions
TW201947681A (zh
Inventor
米林德 嘉德雷
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201947681A publication Critical patent/TW201947681A/zh
Application granted granted Critical
Publication of TWI710038B publication Critical patent/TWI710038B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Plasma Technology (AREA)
TW108113044A 2018-05-07 2019-04-15 基板變形偵測和校正 TWI710038B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862668175P 2018-05-07 2018-05-07
US62/668,175 2018-05-07

Publications (2)

Publication Number Publication Date
TW201947681A TW201947681A (zh) 2019-12-16
TWI710038B true TWI710038B (zh) 2020-11-11

Family

ID=68385479

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108113044A TWI710038B (zh) 2018-05-07 2019-04-15 基板變形偵測和校正

Country Status (7)

Country Link
US (2) US10804125B2 (enExample)
JP (1) JP7364597B2 (enExample)
KR (1) KR102753315B1 (enExample)
CN (1) CN112106179B (enExample)
SG (1) SG11202010093QA (enExample)
TW (1) TWI710038B (enExample)
WO (1) WO2019217015A1 (enExample)

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* Cited by examiner, † Cited by third party
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CN112970090B (zh) * 2018-10-30 2024-06-21 朗姆研究公司 用于等离子体处理工具的衬底状态检测
US11437262B2 (en) * 2018-12-12 2022-09-06 Applied Materials, Inc Wafer de-chucking detection and arcing prevention
US12386342B2 (en) * 2022-05-11 2025-08-12 Applied Materials, Inc. Holistic analysis of multidimensional sensor data for substrate processing equipment
KR20240020964A (ko) * 2022-08-09 2024-02-16 주식회사 테스 기판처리방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
US20110293854A1 (en) * 2009-02-12 2011-12-01 Mitsui Engineering & Shipbuilding Co., Ltd Atomic layer growing apparatus and thin film forming method
US20160329206A1 (en) * 2015-05-08 2016-11-10 Lam Research Corporation Methods of modulating residual stress in thin films

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JPH03228347A (ja) * 1990-02-02 1991-10-09 Hitachi Ltd 半導体素子内部応力制御方式
US6455437B1 (en) * 1999-04-07 2002-09-24 Applied Materials Inc. Method and apparatus for monitoring the process state of a semiconductor device fabrication process
US6996472B2 (en) * 2000-10-10 2006-02-07 The United States Of America As Represented By The Department Of Health And Human Services Drift compensation method for fingerprint spectra
JP4060558B2 (ja) * 2001-09-12 2008-03-12 株式会社日立製作所 欠陥検査方法及びその装置
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
JP5283961B2 (ja) * 2008-04-24 2013-09-04 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2009137940A1 (en) * 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
US8817449B2 (en) 2010-03-26 2014-08-26 Ulvac, Inc. Substrate holding device
JP2013046047A (ja) * 2011-08-26 2013-03-04 Toshiba Corp 加熱装置および半導体装置の製造方法
US10726231B2 (en) * 2012-11-28 2020-07-28 Invensense, Inc. Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing
US10497747B2 (en) * 2012-11-28 2019-12-03 Invensense, Inc. Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing
US10266802B2 (en) * 2013-01-16 2019-04-23 Orteron (T.O) Ltd. Method for controlling biological processes in microorganisms
CA2896674C (en) * 2013-02-08 2021-07-06 Cornell University Biomolecular processing platform and uses thereof
US9245768B2 (en) * 2013-12-17 2016-01-26 Applied Materials, Inc. Method of improving substrate uniformity during rapid thermal processing
WO2015195272A1 (en) * 2014-06-20 2015-12-23 Applied Materials, Inc. Methods for reducing semiconductor substrate strain variation
US20160355947A1 (en) * 2015-06-05 2016-12-08 Sensor Electronic Technology, Inc. Susceptor Heating For Epitaxial Growth Process
KR20170016681A (ko) * 2015-08-04 2017-02-14 에스케이하이닉스 주식회사 레지스트레이션 제어된 포토마스크의 결함 검출 방법
GB201615114D0 (en) * 2016-09-06 2016-10-19 Spts Technologies Ltd A Method and system of monitoring and controlling deformation of a wafer substrate
JP6690488B2 (ja) 2016-09-29 2020-04-28 株式会社リコー 情報処理システム、閲覧制御方法、情報処理装置及びプログラム
JP7085824B2 (ja) 2017-11-28 2022-06-17 東京エレクトロン株式会社 成膜方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129528A (ja) * 1995-11-02 1997-05-16 Hitachi Ltd 半導体装置の製造方法及びその装置
US20110293854A1 (en) * 2009-02-12 2011-12-01 Mitsui Engineering & Shipbuilding Co., Ltd Atomic layer growing apparatus and thin film forming method
US20160329206A1 (en) * 2015-05-08 2016-11-10 Lam Research Corporation Methods of modulating residual stress in thin films

Also Published As

Publication number Publication date
US10804125B2 (en) 2020-10-13
WO2019217015A1 (en) 2019-11-14
KR20200141525A (ko) 2020-12-18
US20200357672A1 (en) 2020-11-12
CN112106179B (zh) 2025-09-09
JP7364597B2 (ja) 2023-10-18
TW201947681A (zh) 2019-12-16
US20190341285A1 (en) 2019-11-07
US11417553B2 (en) 2022-08-16
CN112106179A (zh) 2020-12-18
SG11202010093QA (en) 2020-11-27
JP2021523565A (ja) 2021-09-02
KR102753315B1 (ko) 2025-01-09

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