TWI708993B - 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法 - Google Patents

附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法 Download PDF

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TWI708993B
TWI708993B TW105118976A TW105118976A TWI708993B TW I708993 B TWI708993 B TW I708993B TW 105118976 A TW105118976 A TW 105118976A TW 105118976 A TW105118976 A TW 105118976A TW I708993 B TWI708993 B TW I708993B
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Taiwan
Prior art keywords
film
substrate
conductive film
reflective
photomask
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TW105118976A
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English (en)
Chinese (zh)
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TW201706709A (zh
Inventor
小林巧
浜本和宏
淺川竜男
笑喜勉
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日商Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW105118976A 2015-06-17 2016-06-16 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法 TWI708993B (zh)

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JP2015-121712 2015-06-17
JP2015121712 2015-06-17

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TW201706709A TW201706709A (zh) 2017-02-16
TWI708993B true TWI708993B (zh) 2020-11-01

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TW105118976A TWI708993B (zh) 2015-06-17 2016-06-16 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法
TW109134273A TWI755085B (zh) 2015-06-17 2016-06-16 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法

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TW109134273A TWI755085B (zh) 2015-06-17 2016-06-16 附導電膜之基板、附多層反射膜之基板、反射型光罩基底、反射型光罩及半導體裝置之製造方法

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US (2) US10606166B2 (enExample)
JP (3) JP6815995B2 (enExample)
KR (2) KR102870729B1 (enExample)
SG (2) SG11201710317RA (enExample)
TW (2) TWI708993B (enExample)
WO (1) WO2016204051A1 (enExample)

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Also Published As

Publication number Publication date
TW202109173A (zh) 2021-03-01
US10996554B2 (en) 2021-05-04
KR20180018526A (ko) 2018-02-21
JP2021015295A (ja) 2021-02-12
KR102870729B1 (ko) 2025-10-15
KR20240046293A (ko) 2024-04-08
US20180149962A1 (en) 2018-05-31
JP7296499B2 (ja) 2023-06-22
TWI755085B (zh) 2022-02-11
JP2022069683A (ja) 2022-05-11
JPWO2016204051A1 (ja) 2018-04-05
WO2016204051A1 (ja) 2016-12-22
US20200192213A1 (en) 2020-06-18
SG10201911400WA (en) 2020-02-27
TW201706709A (zh) 2017-02-16
US10606166B2 (en) 2020-03-31
SG11201710317RA (en) 2018-01-30
KR102653351B1 (ko) 2024-04-02
JP6815995B2 (ja) 2021-01-20
JP7296358B2 (ja) 2023-06-22

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