TWI708339B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

Info

Publication number
TWI708339B
TWI708339B TW108122100A TW108122100A TWI708339B TW I708339 B TWI708339 B TW I708339B TW 108122100 A TW108122100 A TW 108122100A TW 108122100 A TW108122100 A TW 108122100A TW I708339 B TWI708339 B TW I708339B
Authority
TW
Taiwan
Prior art keywords
substrate
liquid
pattern
adsorption film
drying treatment
Prior art date
Application number
TW108122100A
Other languages
English (en)
Chinese (zh)
Other versions
TW202015198A (zh
Inventor
阿部博史
奧谷学
尾辻正幸
吉田幸史
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW202015198A publication Critical patent/TW202015198A/zh
Application granted granted Critical
Publication of TWI708339B publication Critical patent/TWI708339B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW108122100A 2018-07-25 2019-06-25 基板處理方法及基板處理裝置 TWI708339B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018139166A JP7231350B2 (ja) 2018-07-25 2018-07-25 基板処理方法および基板処理装置
JP2018-139166 2018-07-25

Publications (2)

Publication Number Publication Date
TW202015198A TW202015198A (zh) 2020-04-16
TWI708339B true TWI708339B (zh) 2020-10-21

Family

ID=69181980

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108122100A TWI708339B (zh) 2018-07-25 2019-06-25 基板處理方法及基板處理裝置

Country Status (3)

Country Link
JP (1) JP7231350B2 (ja)
TW (1) TWI708339B (ja)
WO (1) WO2020021903A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112146359B (zh) * 2020-09-25 2022-03-11 长江存储科技有限责任公司 干燥装置、干燥方法、清洗干燥系统及清洗干燥方法
JP2023139638A (ja) * 2022-03-22 2023-10-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2023139637A (ja) * 2022-03-22 2023-10-04 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法と基板処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013016699A (ja) * 2011-07-05 2013-01-24 Toshiba Corp 基板処理方法及び基板処理装置
TWI528434B (zh) * 2011-07-19 2016-04-01 東芝股份有限公司 半導體基板之超臨界乾燥方法及超臨界乾燥裝置
WO2017169018A1 (ja) * 2016-03-29 2017-10-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2018046063A (ja) * 2016-09-12 2018-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
TW201826363A (zh) * 2015-09-29 2018-07-16 日商思可林集團股份有限公司 基板處理方法及基板處理裝置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013016699A (ja) * 2011-07-05 2013-01-24 Toshiba Corp 基板処理方法及び基板処理装置
TWI528434B (zh) * 2011-07-19 2016-04-01 東芝股份有限公司 半導體基板之超臨界乾燥方法及超臨界乾燥裝置
TW201826363A (zh) * 2015-09-29 2018-07-16 日商思可林集團股份有限公司 基板處理方法及基板處理裝置
WO2017169018A1 (ja) * 2016-03-29 2017-10-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2018046063A (ja) * 2016-09-12 2018-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
JP2020017613A (ja) 2020-01-30
WO2020021903A1 (ja) 2020-01-30
TW202015198A (zh) 2020-04-16
JP7231350B2 (ja) 2023-03-01

Similar Documents

Publication Publication Date Title
TWI742387B (zh) 基板處理方法、基板處理裝置及乾燥前處理液
JP6811619B2 (ja) 基板処理方法および基板処理装置
TWI746998B (zh) 基板處理方法及基板處理裝置
TWI708339B (zh) 基板處理方法及基板處理裝置
TWI728414B (zh) 基板處理方法及基板處理裝置
CN110634769A (zh) 衬底处理方法、衬底处理装置及干燥前处理液
JP7010629B2 (ja) 基板乾燥方法および基板処理装置
TWI722507B (zh) 基板處理方法及基板處理裝置
WO2020213481A1 (ja) 基板処理方法および基板処理装置
CN112309903B (zh) 基板处理方法及基板处理装置
JP7126429B2 (ja) 基板処理方法および基板処理装置
KR102504972B1 (ko) 기판 처리 방법 및 기판 처리 장치
TWI735012B (zh) 基板處理方法及基板處理裝置
WO2020039835A1 (ja) 基板処理方法および基板処理装置
JP2024078250A (ja) 基板処理方法および基板処理装置
JP2019186388A (ja) 基板処理方法および基板処理装置