TWI705888B - Base material for electronic parts transport rack - Google Patents

Base material for electronic parts transport rack Download PDF

Info

Publication number
TWI705888B
TWI705888B TW108127377A TW108127377A TWI705888B TW I705888 B TWI705888 B TW I705888B TW 108127377 A TW108127377 A TW 108127377A TW 108127377 A TW108127377 A TW 108127377A TW I705888 B TWI705888 B TW I705888B
Authority
TW
Taiwan
Prior art keywords
oxidation
plating film
base material
resin
treated
Prior art date
Application number
TW108127377A
Other languages
Chinese (zh)
Other versions
TW202015908A (en
Inventor
吉松陽平
吉田広
黒川哲平
Original Assignee
日商東洋鋼鈑股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東洋鋼鈑股份有限公司 filed Critical 日商東洋鋼鈑股份有限公司
Publication of TW202015908A publication Critical patent/TW202015908A/en
Application granted granted Critical
Publication of TWI705888B publication Critical patent/TWI705888B/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/60Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using alkaline aqueous solutions with pH greater than 8
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/68Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous solutions with pH between 6 and 8
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/28Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases more than one element being applied in one step
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34Pretreatment of metallic surfaces to be electroplated
    • C25D5/42Pretreatment of metallic surfaces to be electroplated of light metals
    • C25D5/44Aluminium
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04Mounting of components, e.g. of leadless components

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本發明提供一種用於電子零件搬送用機架的基材,其係使用於具備供吸附電子零件之樹脂吸附部之電子零件搬送用機架的用於電子零件搬送用機架的基材,其中,前述用於電子零件搬送用機架的基材係用以支持前述樹脂吸附部,且具備:金屬板,及形成於前述金屬板上且包含選自Ni、Sn及P之至少1種元素的氧化處理鍍敷皮膜;前述氧化處理鍍敷皮膜的最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或前述氧化處理鍍敷皮膜的最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例為1%以上。The present invention provides a base material for a rack for conveying electronic parts, which is used in a base material for a rack for conveying electronic parts that is equipped with a resin adsorbing portion for adsorbing electronic parts. , The aforementioned base material for the electronic component conveying rack is used to support the aforementioned resin adsorption part, and includes: a metal plate, and a metal plate formed on the aforementioned metal plate and containing at least one element selected from Ni, Sn, and P Oxidation-treated plating film; the state ratio of Ni 2 O 3 in the oxidized state of Ni among all Ni elements on the outermost surface of the above-mentioned oxidation-treated plating film, or Sn among all Sn elements on the outermost surface of the above-mentioned oxidation-treated plating film The proportion of SnO 2 in the oxidation state is 1% or more.

Description

用於電子零件搬送用機架的基材Base material for electronic parts transport rack

本發明係有關於一種使用於具備供吸附電子零件之樹脂吸附部之電子零件搬送用機架的用於電子零件搬送用機架的基材。The present invention relates to a base material for an electronic component transportation rack used in an electronic component transportation rack provided with a resin adsorption portion for sucking electronic components.

以往作為用於將半導體晶片往上抬並搬送至既定位置之機架,係使用搬送用機架。在此種搬送用機架中,藉由使其前端部接觸半導體晶片中央部附近,並使吸附孔呈真空狀態,可一邊吸附半導體晶片一邊予以搬送。In the past, as a rack for lifting and transporting semiconductor wafers to a predetermined position, a transport rack was used. In this type of transport rack, the front end of the semiconductor wafer is brought into contact with the vicinity of the center of the semiconductor wafer, and the suction hole is in a vacuum state, so that the semiconductor wafer can be transported while suctioning.

另一方面,近年來為了實現半導體晶片的多機能・高速化及隨之而生的高密度安裝化,而持續開發在晶片內形成貫通電極並藉由凸塊連接進行覆晶安裝的晶片疊晶片技術。具有此種貫通電極的半導體晶片係於晶片表面具備連接用隆起電極壁;為了與上下層合之半導體晶片的隆起電極壁接合,而經常採用比習知半導體晶片之連接墊片更高地突出之構造。On the other hand, in recent years, in order to realize the multi-function, high-speed and high-density mounting of semiconductor chips, the development of chip stacks in which through electrodes are formed in the chips and flip-chip mounting is performed by bump connection has been continued. technology. A semiconductor wafer with such a through-electrode is provided with a bump electrode wall for connection on the surface of the wafer; in order to bond with the bump electrode wall of the semiconductor wafer laminated on top and bottom, a structure that protrudes higher than the connection pad of the conventional semiconductor wafer is often used .

因此,利用真空狀態來進行搬送的搬送用機架有時非適用於具有此種貫通電極之半導體晶片的搬送,作為替代其之搬送機架,有人提出利用樹脂等黏著物之吸附方式(例如參照專利文獻1)。然而,此專利文獻1之技術中,並未針對供支持吸附用之樹脂之基材的強度或硬度,甚而與樹脂的密接性加以研究。 [先前技術文獻] [專利文獻]Therefore, a transfer rack that uses a vacuum state for transportation is sometimes not suitable for the transfer of semiconductor wafers with such through electrodes. As an alternative to the transfer rack, a suction method using adhesives such as resin has been proposed (for example, refer to Patent Document 1). However, in the technique of Patent Document 1, the strength or hardness of the base material of the resin for supporting adsorption, or even the adhesion with the resin, has not been studied. [Prior Technical Literature] [Patent Literature]

[專利文獻1] 日本特開2010-287679號公報[Patent Document 1] JP 2010-287679 A

[發明所欲解決之課題][The problem to be solved by the invention]

本發明目的在於提供一種強度及硬度高,且對於構成供吸附電子零件之樹脂吸附部的樹脂顯示適當的密接強度之用於電子零件搬送用機架的基材。 [解決課題之手段]The object of the present invention is to provide a base material for an electronic component transport frame that has high strength and hardness and exhibits an appropriate adhesion strength to the resin constituting the resin adsorption portion for adsorbing the electronic component. [Means to solve the problem]

本案發明人等為達成上述目的而致力進行研究的結果發現,作為用於具備供吸附電子零件之樹脂吸附部之電子零件搬送用機架的基材,透過使用具備:金屬板,及形成於此金屬板上且包含選自Ni、Sn及P之至少1種元素的氧化處理鍍敷皮膜,並將氧化處理鍍敷皮膜的最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或前述氧化處理鍍敷皮膜的最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例控制成1%以上者,可達成上述目的,終至完成本發明。The inventors of the present case have worked hard to achieve the above-mentioned object. As a result, they have discovered that as a base material for an electronic component transport frame equipped with a resin adsorption part for adsorbing electronic components, it is equipped with: a metal plate and formed thereon. An oxidation-treated plating film containing at least one element selected from Ni, Sn, and P on a metal plate, and the state of Ni 2 O 3 in the oxidation state of Ni among all the Ni elements on the outermost surface of the oxidation-treated plating film The ratio or the state ratio of SnO 2 as the Sn oxidation state among all the Sn elements on the outermost surface of the oxidation-treated plating film is controlled to be 1% or more to achieve the above-mentioned object, and finally complete the present invention.

亦即,根據本發明,可提供一種用於電子零件搬送用機架的基材,其係使用於具備供吸附電子零件之樹脂吸附部之電子零件搬送用機架的用於電子零件搬送用機架的基材,其中, 前述用於電子零件搬送用機架的基材係用以支持前述樹脂吸附部, 且具備:金屬板,及形成於前述金屬板上且包含選自Ni、Sn及P之至少1種元素的氧化處理鍍敷皮膜; 前述氧化處理鍍敷皮膜的最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或前述氧化處理鍍敷皮膜的最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例為1%以上。 此外,前述氧化處理鍍敷皮膜的最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或前述氧化處理鍍敷皮膜的最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例較佳為超過5%。That is, according to the present invention, it is possible to provide a base material for an electronic component transport rack, which is used in an electronic component transport machine equipped with an electronic component transport rack equipped with a resin adsorption portion for adsorbing electronic components The base material of the rack, wherein the base material used for the electronic component transport rack is used to support the resin adsorption part, and is provided with: a metal plate, and a metal plate formed on the metal plate and containing selected from Ni, Sn and P The oxidation treatment plating film of at least one element; the ratio of the state of Ni 2 O 3 as the oxidation state of Ni among all the Ni elements on the uppermost surface of the oxidation treatment plating film, or the ratio of the state of the uppermost surface of the oxidation treatment plating film The proportion of SnO 2 in the oxidation state of Sn among all Sn elements is 1% or more. In addition, the ratio of the state ratio of Ni 2 O 3 in the oxidized state of Ni among all Ni elements on the outermost surface of the oxidation-treated plating film, or SnO in the oxidized state of Sn among all the Sn elements on the outermost surface of the oxidation-treated plating film The state ratio of 2 is preferably more than 5%.

本發明之用於電子零件搬送用機架的基材中,前述氧化處理鍍敷皮膜的最表面之氧元素的存在比例更佳為40atom%以上。 較佳的是,前述氧化處理鍍敷皮膜為至少含有Ni的氧化處理鍍敷皮膜,前述氧化處理鍍敷皮膜的最表面之Ni的NiO與Ni2 O3 的狀態比,以「NiO:Ni2 O3 」之比計較佳為11.0:1.0~1.0:99.0,更佳為7.0:1.8~23.8:76.2,再更佳為7.0:1.8~27.4:72.6。 較佳的是,前述氧化處理鍍敷皮膜為至少含有Ni-P合金的氧化處理鍍敷皮膜。 較佳的是,前述氧化處理鍍敷皮膜中之全部P元素中處於氧化狀態之P的氧化物的狀態比例為21%以上。 較佳的是,前述氧化處理鍍敷皮膜的厚度為1~40μm。 較佳的是,前述金屬板為鋁板。 本發明之用於電子零件搬送用機架的基材係以在前述金屬板上進一步具備含有鋅的基底層,且前述氧化處理鍍敷皮膜係形成於前述基底層上為佳。In the base material used in the electronic component transport frame of the present invention, the oxygen element content on the outermost surface of the oxidation-treated plating film is more preferably 40 atom% or more. Preferably, the oxidation-treated plating film is an oxidation-treated plating film containing at least Ni, and the state ratio of NiO and Ni 2 O 3 on the outermost surface of the oxidation-treated plating film is expressed as "NiO: Ni 2 The ratio of O 3 "is preferably 11.0:1.0~1.0:99.0, more preferably 7.0:1.8~23.8:76.2, still more preferably 7.0:1.8~27.4:72.6. Preferably, the aforementioned oxidation-treated plating film is an oxidation-treated plating film containing at least a Ni-P alloy. Preferably, the state ratio of P oxide in an oxidized state among all P elements in the aforementioned oxidation-treated plating film is 21% or more. Preferably, the thickness of the aforementioned oxidation-treated plating film is 1-40 μm. Preferably, the aforementioned metal plate is an aluminum plate. The base material used for the electronic component transport frame of the present invention preferably further includes a base layer containing zinc on the metal plate, and the oxidation-treated plating film is preferably formed on the base layer.

又,根據本發明,可提供一種電子零件搬送用機架,其係在上述之用於電子零件搬送用機架的基材上具備供吸附電子零件的樹脂吸附部。 [發明之效果]Furthermore, according to the present invention, it is possible to provide a rack for transporting electronic components, which is provided with a resin adsorbing portion for sucking electronic components on the base material of the rack for transporting electronic components. [Effects of Invention]

根據本發明,可提供一種強度及硬度高,且對於構成供吸附電子零件之樹脂吸附部的樹脂顯示適當的密接強度之用於電子零件搬送用機架的基材,以及使用此種用於電子零件搬送用機架的基材所得之電子零件搬送用機架。According to the present invention, it is possible to provide a base material for electronic parts transport racks which is high in strength and hardness and exhibits appropriate adhesion strength to the resin constituting the resin adsorption portion for adsorbing electronic parts, and uses such a base material for electronic parts A frame for transferring electronic parts obtained from the base material of a frame for transferring parts.

圖1為表示本實施形態之用於電子零件搬送用機架的基材10的構造的剖面圖。如圖1所示,本實施形態之用於電子零件搬送用機架的基材10係於金屬板11上形成有作為最表層之氧化處理鍍敷皮膜12而成。氧化處理鍍敷皮膜12係包含選自Ni、Sn及P之至少1種元素,最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例為1%以上。FIG. 1 is a cross-sectional view showing the structure of a base material 10 used in an electronic component transport frame of the present embodiment. As shown in FIG. 1, the base material 10 used for the electronic component conveyance frame of this embodiment is formed by forming the oxidation treatment plating film 12 as the outermost layer on the metal plate 11. The oxidation-treated plating film 12 contains at least one element selected from the group consisting of Ni, Sn, and P. The proportion of Ni 2 O 3 in the oxidation state of Ni among all Ni elements on the outermost surface, or the proportion of all Sn elements on the outermost surface as The proportion of SnO 2 in the oxidation state of Sn is 1% or more.

<電子零件搬送用機架的製造方法> 首先,在對本實施形態之用於電子零件搬送用機架的基材10詳細加以說明前,茲參照圖2來說明使用本實施形態之用於電子零件搬送用機架的基材10所得之電子零件搬送用機架的製造方法。<Manufacturing method of rack for conveying electronic parts> First, before describing in detail the base material 10 used in the electronic component transport frame of this embodiment, the electronic components obtained by using the base material 10 used in the electronic component transport frame of this embodiment will be described with reference to FIG. A manufacturing method of a rack for parts transport.

首先,如圖2(A)所示,準備本實施形態之用於電子零件搬送用機架的基材10(以下方便上稱為「基材10」)。其次,如圖2(B)所示,形成由吸附用樹脂所構成的樹脂層20。樹脂層20係形成於基材10之形成有氧化處理鍍敷皮膜12(參照圖1)的一面側。First, as shown in FIG. 2(A), the base material 10 (hereinafter referred to as the "base material 10" for convenience) for the electronic component transport frame of the present embodiment is prepared. Next, as shown in FIG. 2(B), a resin layer 20 made of resin for adsorption is formed. The resin layer 20 is formed on the side of the substrate 10 on which the oxidation-treated plating film 12 (refer to FIG. 1) is formed.

其次,如圖2(C)所示,藉由將具有多個模穴31的成形用模具30按壓於形成於基材10上的樹脂層20並一邊施加壓力一邊加熱,而將構成樹脂層20之吸附用樹脂成形為對應模穴31之形狀;藉此,便如圖2(D)所示製成在基材10上形成有多個由吸附用樹脂所構成之樹脂吸附部21而成的電子零件搬送用機架40。Next, as shown in FIG. 2(C), a molding die 30 having a plurality of cavities 31 is pressed against the resin layer 20 formed on the substrate 10 and heated while applying pressure to form the resin layer 20 The adsorption resin is formed into a shape corresponding to the mold cavity 31; thereby, as shown in Figure 2(D), a substrate 10 is formed with a plurality of resin adsorption parts 21 composed of adsorption resin Rack 40 for conveying electronic parts.

此外,就如此所得之電子零件搬送用機架40,基於進一步提高電子零件的搬送性能之觀點,對於殘留於形成有多個樹脂吸附部21之區域(亦即中央部附近)的周圍之多餘的吸附用樹脂,係以予以從基材10剝離等而去除為宜。In addition, the thus-obtained electronic component conveying rack 40 has a view of further improving the conveying performance of electronic components, and the excess remaining in the periphery of the area (that is, near the center portion) where the plurality of resin adsorption portions 21 are formed The resin for adsorption is preferably removed by peeling from the base material 10 or the like.

然後,如此製造之電子零件搬送用機架40係如圖3(A)所示,藉由對載置於貯存區50的多個電子零件60予以按壓,而藉由多個樹脂吸附部21吸附多個電子零件60,並如圖3(B)所示,將多個電子零件60搬送至用來安裝該電子零件的電路基板70上,接著,透過予以按壓於電路基板70上,而將多個電子零件60安裝於電路基板70上而使用。Then, the electronic component transport frame 40 manufactured in this way is shown in FIG. 3(A). By pressing the plurality of electronic components 60 placed in the storage area 50, the plurality of resin adsorption parts 21 suck A plurality of electronic components 60, and as shown in FIG. 3(B), the plurality of electronic components 60 are transported to the circuit board 70 for mounting the electronic components, and then, by pressing on the circuit board 70, the Each electronic component 60 is mounted on the circuit board 70 and used.

作為供形成樹脂層20之吸附用樹脂,不特別限定,基於具有適當的黏著性,由此可更合宜地進行電子零件的搬送之觀點,可使用聚二甲基矽氧烷(PDMS)等聚矽氧系樹脂。作為聚矽氧系樹脂,除聚二甲基矽氧烷以外,亦可較佳使用具有矽氧烷鍵作為主骨架,且包含羥基、胺基、甲基、羧基及酮基之任一者作為官能基者。The resin for adsorption for forming the resin layer 20 is not particularly limited. Based on the viewpoint that it has suitable adhesiveness and can more conveniently transport electronic parts, a polydimethylsiloxane (PDMS) or the like can be used. Silicone-based resin. As the polysiloxane-based resin, in addition to polydimethylsiloxane, it is also preferable to use one having a siloxane bond as the main skeleton and containing any of a hydroxyl group, an amino group, a methyl group, a carboxyl group, and a ketone group. Functional group.

或者,亦可使用非聚矽氧系樹脂來替代聚矽氧系樹脂,作為非聚矽氧系樹脂,可舉出聚醚系樹脂或聚酯系樹脂等;此等當中,宜為聚醚系樹脂。作為聚醚系樹脂,宜為具有醚鍵作為主骨架,且包含羥基、胺基、甲基、羧基及酮基之任一者作為官能基者;又,作為聚酯系樹脂,宜為具有酯鍵作為主骨架,且包含羥基、胺基、甲基、羧基及酮基之任一者作為官能基者。再者,作為非聚矽氧系樹脂,亦可使用胺基甲酸酯系樹脂或聚乳酸系樹脂、氟系樹脂。作為胺基甲酸酯系樹脂、聚乳酸系樹脂及氟系樹脂,宜使用例如包含胺基甲酸酯鍵、酯鍵、醚鍵及醯胺鍵之任一者作為主骨架,且包含羥基、胺基、甲基、羧基及酮基之任一者作為官能基者。Alternatively, non-silicone resins can be used instead of polysilicone resins. Examples of non-silicone resins include polyether resins or polyester resins. Among these, polyether resins are preferred. Resin. The polyether resin preferably has an ether bond as the main skeleton and contains any one of a hydroxyl group, an amino group, a methyl group, a carboxyl group, and a ketone group as a functional group; and, the polyester resin preferably has an ester A bond is a main skeleton, and any one of a hydroxyl group, an amino group, a methyl group, a carboxyl group, and a ketone group is included as a functional group. In addition, as non-polysiloxane resins, urethane resins, polylactic acid resins, and fluorine resins may also be used. As the urethane-based resin, polylactic acid-based resin, and fluorine-based resin, it is suitable to use, for example, any one of a urethane bond, an ester bond, an ether bond, and an amide bond as the main skeleton, and a hydroxyl group, Any one of an amino group, a methyl group, a carboxyl group, and a ketone group is a functional group.

此等吸附用樹脂可為硬化性樹脂(熱硬化性樹脂或紫外線硬化性樹脂)或者熱塑性樹脂任一種。例如,使用熱硬化性樹脂作為吸附用樹脂時,於圖2(C)所示步驟中,在將具有多個模穴31的成形用模具30按壓於形成於基材10上的樹脂層20並一邊施加壓力一邊加熱時,可成形為對應樹脂吸附部21之形狀並使其硬化。The resin for adsorption may be either curable resin (thermosetting resin or ultraviolet curable resin) or thermoplastic resin. For example, when a thermosetting resin is used as the resin for adsorption, in the step shown in FIG. 2(C), a molding die 30 having a plurality of cavities 31 is pressed against the resin layer 20 formed on the substrate 10 and When heating while applying pressure, it can be formed into a shape corresponding to the resin adsorption portion 21 and hardened.

<用於電子零件搬送用機架的基材10> 諸如上述,本實施形態之用於電子零件搬送用機架的基材10係如圖2(A)~圖2(D)所示,用以獲得電子零件搬送用機架40者。具體而言,本實施形態之用於電子零件搬送用機架的基材10係作為供支持樹脂吸附部21的支持基材使用。Base material 10 for electronic parts conveyance frame> As described above, the base material 10 used for the electronic component transport frame of this embodiment is shown in FIGS. 2(A) to 2(D) to obtain the electronic component transport frame 40. Specifically, the base material 10 used in the electronic component transport frame of the present embodiment is used as a support base material for supporting the resin adsorption portion 21.

本實施形態之用於電子零件搬送用機架的基材10係如圖1所示,在金屬板11上形成作為最表層之氧化處理鍍敷皮膜12而成。As shown in FIG. 1, the base material 10 used in the electronic component transport frame of the present embodiment is formed by forming an oxidation treatment plating film 12 as the outermost layer on a metal plate 11.

作為金屬板11,不特別限定,可舉出鋼板、不鏽鋼板、銅板、鋁板、鋁合金板或鎳板等。此等當中,由價格低廉而言,較佳為鋼板或鋁板、鋁合金板。再者,基於可達電子零件搬送用機架40之輕量化,由此可減少搬送電子零件所需之能量之觀點,較佳為鋁板,或鋁合金板。金屬板11的厚度不特別限定,基於搬送電子零件時的操作處理性觀點,較佳為0.3~2mm,更佳為0.5~0.8mm。The metal plate 11 is not particularly limited, and examples include steel plates, stainless steel plates, copper plates, aluminum plates, aluminum alloy plates, and nickel plates. Among these, in terms of low price, steel plate, aluminum plate, or aluminum alloy plate is preferable. Furthermore, from the viewpoint that the weight of the frame 40 for conveying electronic parts can be reduced, thereby reducing the energy required for conveying electronic parts, an aluminum plate or an aluminum alloy plate is preferable. The thickness of the metal plate 11 is not particularly limited, but it is preferably 0.3 to 2 mm, more preferably 0.5 to 0.8 mm from the viewpoint of handling and handling when electronic components are transported.

氧化處理鍍敷皮膜12係形成於金屬板11上的鍍敷被膜,至少其表面係經氧化處理,構成基材10的最表層。本實施形態中,氧化處理鍍敷皮膜12係包含選自Ni、Sn及P之至少1種元素(較佳為包含選自Ni及Sn之至少1種元素),且最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例(亦即以Ni元素換算之Ni2 O3 相對於Ni單質或NiO等Ni2 O3 以外之氧化狀態的氧化物、Ni的氧化物以外之Ni化合物與Ni2 O3 之合計的狀態比例),或最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例(亦即以Sn元素換算之SnO2 相對於Sn單質或SnO等SnO2 以外之氧化狀態的氧化物、Sn的氧化物以外之Sn化合物與SnO2 之合計的狀態比例)為1%以上。The oxidation-treated plating film 12 is a plating film formed on the metal plate 11, and at least the surface thereof is oxidized to form the outermost layer of the base 10. In this embodiment, the oxidation-treated plating film 12 contains at least one element selected from Ni, Sn, and P (preferably contains at least one element selected from Ni and Sn), and all Ni elements on the outermost surface as the state of Ni 2 O 3 ratio of the oxidation state of Ni (i.e., in terms of Ni element in Ni 2 O 3 with respect to the oxidation state of Ni 2 O 3 other than the simple substance of Ni or NiO and other oxides, Ni oxides other than the Ni The total state ratio of the compound and Ni 2 O 3 ), or the state ratio of SnO 2 as the oxidation state of Sn among all the Sn elements on the outermost surface (that is, the ratio of SnO 2 calculated as Sn element to Sn element or SnO 2 The ratio of the total state of the Sn compound and SnO 2 other than the oxide in the oxidation state and the Sn oxide is 1% or more.

根據本實施形態,藉由在金屬板11上形成作為最表層之氧化處理鍍敷皮膜12,並使氧化處理鍍敷皮膜12成為此種構成,可使用於電子零件搬送用機架的基材10其強度及硬度更高,且對於構成樹脂吸附部21之吸附用樹脂顯示適當的密接強度。尤其是在製造電子零件搬送用機架40時,需如圖2(C)所示步驟般,將成形用模具30以既定的壓力按壓於用於電子零件搬送用機架的基材10上,因此,用於電子零件搬送用機架的基材10係要求可有效抑制由成形用模具30之按壓所造成的變形、破損或劃傷。再者,由於用於電子零件搬送用機架的基材10係用來支持樹脂吸附部21者,而要求:與構成樹脂吸附部21之吸附用樹脂的密接性優良;另一方面,對於殘留於樹脂吸附部21以外的部分之多餘的吸附用樹脂(例如殘留於形成有多個樹脂吸附部21之區域(亦即中央部附近)的周圍之吸附用樹脂),有時可藉由剝離等而去除,而顯示可將此等適當地去除之程度的密接性(亦即密接力過高)。再者,若於步驟內發生劃傷,則平滑度會惡化,亦有搬送性能變差的課題。According to this embodiment, by forming the oxidation-treated plating film 12 as the outermost layer on the metal plate 11 and making the oxidation-treated plating film 12 into such a configuration, it can be used for the base material 10 of the electronic component transport rack. The strength and hardness are higher, and the resin for adsorption constituting the resin adsorption portion 21 exhibits an appropriate adhesion strength. In particular, when manufacturing the electronic component transport frame 40, it is necessary to press the molding die 30 with a predetermined pressure on the base material 10 for the electronic component transport frame as shown in the steps shown in FIG. 2(C). Therefore, it is required that the base material 10 used for the electronic component conveyance frame can effectively suppress the deformation, damage or scratches caused by the pressing of the molding die 30. Furthermore, since the base material 10 used for the electronic component transport frame is used to support the resin adsorption part 21, it is required to have excellent adhesion with the adsorption resin constituting the resin adsorption part 21; Excess resin for adsorption in parts other than the resin adsorption part 21 (for example, adsorption resin that remains around the area where a plurality of resin adsorption parts 21 are formed (that is, near the center)) may be peeled off, etc. It is removed, and shows the degree of adhesion (that is, the adhesion is too high) that can be appropriately removed. Furthermore, if scratches occur in the step, the smoothness will deteriorate, and there will also be a problem of deterioration in transport performance.

相對於此,根據本實施形態,藉由使用於電子零件搬送用機架的基材10具有上述構成,則強度及硬度高,對於構成樹脂吸附部21之吸附用樹脂可顯示適當的密接強度;藉此,根據本實施形態,可適當地解決此種問題。In contrast, according to the present embodiment, by having the above-mentioned structure of the base material 10 used in the electronic component transport frame, the strength and hardness are high, and the resin for adsorption that constitutes the resin adsorption portion 21 can exhibit an appropriate adhesion strength; Therefore, according to this embodiment, such a problem can be appropriately solved.

氧化處理鍍敷皮膜12只要是包含選自Ni、Sn及P之至少1種元素,且最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例為1%以上者即可;作為供形成樹脂吸附部21之吸附用樹脂,使用聚矽氧系樹脂時, Ni2 O3 的狀態比例,或SnO2 的狀態比例較佳為1.75~72.6%的範圍,更佳為超過5%且為72.6%以下的範圍,再更佳為7.5~49.4%的範圍。又,作為供形成樹脂吸附部21之吸附用樹脂,使用聚醚系樹脂、聚酯系樹脂、氟系樹脂、胺基甲酸酯系樹脂或者聚乳酸系樹脂時,最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例更佳為7.5~ 100%的範圍,再更佳為7.97~72.6%的範圍,再更佳為7.97 ~30%的範圍。最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例過低的話,則對吸附用樹脂之密接性不足。The oxidation treatment plating film 12 contains at least one element selected from Ni, Sn, and P, and the ratio of the state of Ni 2 O 3 as the oxidation state of Ni among all the Ni elements on the outermost surface, or all the Sn elements on the outermost surface The proportion of the state of SnO 2 as the oxidation state of Sn is only 1% or more; as the adsorption resin for forming the resin adsorbing part 21, when a silicone resin is used, the proportion of the state of Ni 2 O 3 , or SnO 2 The ratio of the state of is preferably in the range of 1.75 to 72.6%, more preferably in the range of more than 5% and 72.6% or less, and still more preferably in the range of 7.5 to 49.4%. In addition, when polyether resin, polyester resin, fluorine resin, urethane resin, or polylactic acid resin is used as the adsorption resin for forming the resin adsorbing portion 21, all Ni elements on the outermost surface The ratio of the state of Ni 2 O 3 as the oxidation state of Ni, or the ratio of the state of SnO 2 as the oxidation state of Sn among all the Sn elements on the outermost surface is more preferably in the range of 7.5 to 100%, and still more preferably 7.97 to 72.6% The range is more preferably 7.97 ~ 30%. If the ratio of Ni 2 O 3 as the oxidation state of Ni among all the Ni elements on the outermost surface, or the ratio of the state of SnO 2 as the oxidation state of Sn among all the Sn elements on the outermost surface is too low, the adhesion to the resin for adsorption insufficient.

當氧化處理鍍敷皮膜12為至少含有Ni的氧化處理鍍敷皮膜時,基於可對構成樹脂吸附部21之吸附用樹脂顯示更適當的密接強度之觀點,氧化處理鍍敷皮膜的最表面之Ni的NiO與Ni2 O3 的狀態比,以「NiO:Ni2 O3 」之比計較佳為11.0:1.0~1.0:99.0,更佳為7.0:1.8~23.8:76.2,再更佳為7.0:1.8~27.4:72.6。NiO與Ni2 O3 的狀態比,可對氧化處理鍍敷皮膜12的表面進行X光光電子光譜(XPS)測定,求出Ni單質之波峰的積分值、NiO之波峰的積分值與Ni2 O3 之波峰的積分值,再根據此等算出最表面之全部Ni元素之NiO及Ni2 O3 的狀態比例,而求出NiO與Ni2 O3 的狀態比。When the oxidation-treated plating film 12 is an oxidation-treated plating film containing at least Ni, the Ni on the outermost surface of the oxidation-treated plating film is based on the viewpoint that it can exhibit more appropriate adhesion strength to the resin for adsorption constituting the resin adsorbing part 21 The state ratio of NiO to Ni 2 O 3 is preferably 11.0:1.0~1.0:99.0 in terms of the ratio of "NiO:Ni 2 O 3 ", more preferably 7.0:1.8~23.8:76.2, and even more preferably 7.0: 1.8~27.4: 72.6. The state ratio of NiO and Ni 2 O 3 can be measured by X-ray photoelectron spectroscopy (XPS) on the surface of the oxidation-treated plating film 12 to obtain the integral value of the peak of Ni element, the integral value of the peak of NiO, and Ni 2 O the peak integration value 3, and then calculates all NiO under these outermost surface state of the Ni element and the ratio of Ni 2 O 3, and obtains status Ni 2 O 3 and NiO ratio.

又,氧化處理鍍敷皮膜12,只要最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例為上述範圍即可;最表面之氧元素的存在比例較佳為40.0atom%以上,更佳為40.6atom%以上,再更佳為43.0atom%以上。最表面之氧元素的存在比例的上限不特別限定,較佳為53atom%以下,更佳為45atom%以下。藉由使最表面之氧元素的存在比例為上述範圍,可進一步提高對吸附用樹脂之密接性。本實施形態中,氧化處理鍍敷皮膜12之最表面之氧元素的存在比例,可藉由對氧化處理鍍敷皮膜12的表面進行X光光電子光譜(XPS)測定,求出構成氧化處理鍍敷皮膜12之各氧化物的波峰積分值,再由求得之波峰積分值算出氧元素的存在比例(atom%)而求得。In addition, for the oxidation-treated plating film 12, the state ratio of Ni 2 O 3 as the oxidation state of Ni among all the Ni elements on the outermost surface, or the state ratio of SnO 2 as the oxidation state of Sn among all the Sn elements on the outermost surface is the above The range is sufficient; the ratio of the oxygen element on the outermost surface is preferably 40.0 atom% or more, more preferably 40.6 atom% or more, and still more preferably 43.0 atom% or more. The upper limit of the proportion of oxygen on the outermost surface is not particularly limited, but it is preferably 53 atom% or less, and more preferably 45 atom% or less. By setting the ratio of the oxygen element on the outermost surface within the above range, the adhesion to the resin for adsorption can be further improved. In this embodiment, the proportion of oxygen elements on the outermost surface of the oxidation-treated plating film 12 can be determined by measuring the surface of the oxidation-treated plating film 12 by X-ray photoelectron spectroscopy (XPS). The peak integral value of each oxide of the film 12 is calculated by calculating the oxygen element existing ratio (atom%) from the obtained peak integral value.

此外,氧化處理鍍敷皮膜12除選自Ni、Sn及P之至少1種元素外,亦可進一步含有Zn。當氧化處理鍍敷皮膜12為進一步含有Zn的氧化處理鍍敷皮膜時,基於可對構成樹脂吸附部21之吸附用樹脂顯示更適當的密接強度之觀點,最表面之全部Zn元素中處於氧化狀態之作為Zn之ZnO的狀態比例較佳為19%以上。又,最表面之全部Zn元素中處於氧化狀態之作為Zn之ZnO2 的狀態比例較佳為1%以上,更佳為69%以上。ZnO與ZnO2 的狀態比,可對氧化處理鍍敷皮膜12的表面進行X光光電子光譜(XPS)測定,進行X光光電子光譜(XPS)測定,求出Zn單質之波峰的積分值、ZnO之波峰的積分值與ZnO2 之波峰的積分值,並由此等算出最表面之全部Zn元素之ZnO及ZnO2 的狀態比例,而求得ZnO與ZnO2 的狀態比。In addition, the oxidation-treated plating film 12 may further contain Zn in addition to at least one element selected from Ni, Sn, and P. When the oxidation-treated plating film 12 is an oxidation-treated plating film that further contains Zn, based on the viewpoint that more appropriate adhesion strength can be exhibited to the resin for adsorption constituting the resin adsorbing portion 21, all the Zn elements on the outermost surface are in an oxidized state The state ratio of ZnO as Zn is preferably 19% or more. In addition, the proportion of ZnO 2 as Zn in the oxidized state among all the Zn elements on the outermost surface is preferably 1% or more, and more preferably 69% or more. The state ratio of ZnO and ZnO 2 can be measured by X-ray photoelectron spectroscopy (XPS) and X-ray photoelectron spectroscopy (XPS) on the surface of the oxidation-treated coating film 12, and the integral value of the peak of Zn element and the value of ZnO can be obtained. integral value of the integral value of the peak and the peak of ZnO 2 and the like thereby calculates the entire uppermost surface of the ZnO of Zn and the ratio of ZnO state 2, the state is obtained of ZnO and ZnO 2 ratio.

當氧化處理鍍敷皮膜12為至少含有Sn的氧化處理鍍敷皮膜時,基於可對構成樹脂吸附部21之吸附用樹脂顯示更適當的密接強度之觀點,氧化處理鍍敷皮膜12的最表面之全部Sn元素中作為Sn氧化狀態之SnO的狀態比例較佳為19%以上。又,氧化處理鍍敷皮膜12的最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例較佳為1%以上,更佳為69%以上。SnO與SnO2 的狀態比,可對氧化處理鍍敷皮膜12的表面進行X光光電子光譜(XPS)測定,求出Sn單質之波峰的積分值、SnO之波峰的積分值與SnO2 之波峰的積分值,再由此等算出最表面之全部Sn元素之SnO及SnO2 的狀態比例,而求得SnO與SnO2 的狀態比。When the oxidation-treated plating film 12 is an oxidation-treated plating film containing at least Sn, based on the viewpoint that it can exhibit a more appropriate adhesion strength to the resin for adsorption constituting the resin adsorbing portion 21, one of the outermost surfaces of the oxidation-treated plating film 12 The proportion of SnO as the oxidation state of Sn among all Sn elements is preferably 19% or more. In addition, the state ratio of SnO 2 as the Sn oxidation state among all the Sn elements on the outermost surface of the oxidation-treated plating film 12 is preferably 1% or more, and more preferably 69% or more. The state ratio of SnO and SnO 2 can be measured by X-ray photoelectron spectroscopy (XPS) on the surface of the oxidation-treated plating film 12, and the integral value of the peak of Sn element, the integral value of the peak of SnO and the peak of SnO 2 Integral value, and then calculate the state ratio of SnO and SnO 2 of all Sn elements on the outermost surface, and obtain the state ratio of SnO and SnO 2 .

當氧化處理鍍敷皮膜12為至少含有P的氧化處理鍍敷皮膜時,基於可對構成樹脂吸附部21之吸附用樹脂顯示更適當的密接強度之觀點,氧化處理鍍敷皮膜12的最表面之全部P元素中處於氧化狀態之P的氧化物的狀態比例為21%以上,更佳為24%以上。全部P元素中處於氧化狀態之P的氧化物的狀態比例之上限不特別限定,較佳為97%以下,更佳為60%以下。P的氧化物的狀態比例可與上述同樣地藉由X光光電子光譜(XPS)測定來求得。When the oxidation-treated plating film 12 is an oxidation-treated plating film containing at least P, based on the viewpoint that it can exhibit more appropriate adhesion strength to the resin for adsorption constituting the resin adsorbing portion 21, one of the outermost surfaces of the oxidation-treated plating film 12 The proportion of the oxide of P in an oxidized state among all P elements is 21% or more, more preferably 24% or more. The upper limit of the state ratio of the oxide of P in an oxidized state among all P elements is not particularly limited, but is preferably 97% or less, and more preferably 60% or less. The state ratio of P oxide can be determined by X-ray photoelectron spectroscopy (XPS) measurement in the same manner as described above.

再者,就氧化處理鍍敷皮膜12,基於可使強度、硬度及對構成樹脂吸附部21之吸附用樹脂的密接性更高度地達到平衡,而且可進一步提高氧化處理鍍敷皮膜12表面的平坦性,由此可高精確度地搬送更微細的電子零件之觀點,更佳為至少含有Ni-P合金的氧化處理鍍敷皮膜;此時之氧化處理鍍敷皮膜12的最表面之NiO與Ni2 O3 的狀態比,以「NiO:Ni2 O3 」之比計為11.0:1.0~1.0:99.0。更佳為7.0:1.8~23.8:76.2,再更佳為7.0:1.8~27.4:72.6。NiO與Ni2 O3 的狀態比可與上述同樣地藉由X光光電子光譜(XPS)測定的結果來算出。又,Ni-P合金中之P的含量較佳為1~13重量%,更佳為5~13重量%,再更佳為8~13重量%。Ni‐P合金中之P的含有比例可與上述同樣地藉由X光光電子光譜(XPS)測定來求得。Furthermore, the oxidation-treated plating film 12 can achieve a higher balance of strength, hardness, and adhesion to the adsorption resin constituting the resin adsorbing portion 21, and further improve the flatness of the surface of the oxidation-treated plating film 12 In view of this, it is possible to transport finer electronic parts with high accuracy. It is more preferable to contain at least an oxidation-treated plating film of Ni-P alloy; at this time, the oxidation-treated plating film 12 has NiO and Ni on the outermost surface state 2 O 3 ratio, in order: specific "NiO Ni 2 O 3" the count of 11.0: 1.0 to 1.0: 99.0. More preferably, it is 7.0:1.8~23.8:76.2, and even more preferably is 7.0:1.8~27.4:72.6. The state ratio of NiO and Ni 2 O 3 can be calculated from the results of X-ray photoelectron spectroscopy (XPS) measurement in the same manner as described above. In addition, the content of P in the Ni-P alloy is preferably 1-13% by weight, more preferably 5-13% by weight, and still more preferably 8-13% by weight. The content ratio of P in the Ni-P alloy can be determined by X-ray photoelectron spectroscopy (XPS) measurement in the same manner as described above.

氧化處理鍍敷皮膜12的厚度不特別限定,基於使用於電子零件搬送用機架的基材10的強度及硬度更充足之觀點,較佳為1~40μm,更佳為1~20μm,再更佳為1~10μm,再更佳為5~10μm。The thickness of the oxidation-treated plating film 12 is not particularly limited. Based on the viewpoint that the strength and hardness of the base material 10 used in the electronic component transport frame are more sufficient, it is preferably 1-40 μm, more preferably 1-20 μm, and still more It is preferably 1 to 10 μm, and more preferably 5 to 10 μm.

作為在金屬板11上形成氧化處理鍍敷皮膜12之方法不特別限定,可舉出例如,在氧化處理鍍敷皮膜12採用至少含有Ni的氧化處理鍍敷皮膜時,於金屬板11上實施鍍鎳,再對形成之鍍鎳膜進行氧化處理的方法等。作為氧化處理之方法,不特別限定,可舉出對形成之鍍鎳膜進行熱處理的方法、進行予以浸漬於過氧化氫水(H2 O2 )、次氯酸鹽等液體中之處理的方法、進行水蒸氣處理的方法等。又,此等亦可加以組合。作為進行熱處理時之條件,不特別限定,熱處理溫度較佳為130~300℃,熱處理時間較佳為10~30分鐘。又,作為浸漬於過氧化氫水中之處理中的條件,不特別限定,過氧化氫水的濃度較佳為1~35重量%,更佳為15~35重量%,浸漬溫度(過氧化氫水的溫度)較佳為25~90℃,更佳為25~70℃,浸漬時間較佳為20秒~120分鐘,更佳為20秒~60分鐘。再者,作為水蒸氣處理中的條件,不特別限定,較佳為40~100%RH,更佳為65~100%RH,水蒸氣溫度較佳為40~120℃,更佳為65~85℃,處理時間較佳為1分鐘~72小時,更佳為12~24小時。又,使氧化處理鍍敷皮膜12含有Ni及P時(亦即含有Ni-P合金時),可舉出進行Ni-P鍍敷而形成Ni-P合金鍍敷膜後,對Ni-P合金鍍敷膜進行熱處理的方法、進行予以浸漬於過氧化氫水(H2 O2 )、次氯酸鹽等液體中之處理的方法,或進行水蒸氣處理的方法等。此時,熱處理、浸漬於過氧化氫水中之處理及水蒸氣處理中的條件可採用與上述相同者。The method of forming the oxidation-treated plating film 12 on the metal plate 11 is not particularly limited. For example, when the oxidation-treated plating film 12 is an oxidation-treated plating film containing at least Ni, the metal plate 11 is plated. Nickel, and then oxidize the formed nickel plating film. The method of oxidation treatment is not particularly limited. Examples include a method of heat-treating the formed nickel plating film, and a method of immersing in a liquid such as hydrogen peroxide (H 2 O 2 ), hypochlorite, etc. , Methods of steam treatment, etc. Moreover, these can also be combined. The conditions for the heat treatment are not particularly limited. The heat treatment temperature is preferably 130 to 300°C, and the heat treatment time is preferably 10 to 30 minutes. In addition, the conditions in the treatment of immersion in hydrogen peroxide water are not particularly limited. The concentration of the hydrogen peroxide water is preferably 1 to 35% by weight, more preferably 15 to 35% by weight, and the immersion temperature (hydrogen peroxide water The temperature) is preferably 25 to 90°C, more preferably 25 to 70°C, and the immersion time is preferably 20 seconds to 120 minutes, more preferably 20 seconds to 60 minutes. Furthermore, the conditions in the water vapor treatment are not particularly limited, but are preferably 40 to 100% RH, more preferably 65 to 100% RH, and the water vapor temperature is preferably 40 to 120°C, more preferably 65 to 85 ℃, the treatment time is preferably 1 minute to 72 hours, more preferably 12 to 24 hours. In addition, when the oxidation-treated plating film 12 contains Ni and P (that is, when Ni-P alloy is included), Ni-P plating is performed to form a Ni-P alloy plating film, and the Ni-P alloy A method of heat-treating the plating film, a method of immersing it in a liquid such as hydrogen peroxide (H 2 O 2 ), hypochlorite, or a method of steaming. At this time, the conditions in the heat treatment, the treatment in hydrogen peroxide water, and the steam treatment can be the same as those described above.

此外,氧化處理鍍敷皮膜12採用至少含有Zn的氧化處理鍍敷皮膜時,或者採用至少含有Sn的氧化處理鍍敷皮膜時,可舉出在金屬板11上實施鍍鋅或鍍錫,並對形成之鍍鋅膜、鍍錫膜進行氧化處理的方法等。作為氧化處理之方法,不特別限定,可舉出對形成之鍍鋅膜、鍍錫膜進行熱處理的方法、進行予以浸漬於過氧化氫水等液體中之處理的方法,或進行水蒸氣處理的方法等。又,此等亦可加以組合。熱處理、浸漬於過氧化氫水中之處理及水蒸氣處理中的條件可採用與上述相同者。In addition, when the oxidation-treated plating film 12 is an oxidation-treated plating film containing at least Zn, or when an oxidation-treated plating film containing at least Sn is used, the metal plate 11 may be galvanized or tin-plated, and The zinc-plated film and tin-plated film formed are oxidized. The method of oxidation treatment is not particularly limited. Examples include a method of heat-treating the formed zinc-plated film and tin-plated film, a method of immersing in a liquid such as hydrogen peroxide water, or a method of steam treatment. Methods etc. Moreover, these can also be combined. The conditions for the heat treatment, the treatment by immersion in hydrogen peroxide water, and the steam treatment can be the same as those described above.

又,氧化處理鍍敷皮膜12採用至少含有P的氧化處理鍍敷皮膜時,可舉出在金屬板11上視需求實施鍍鋅或鍍錫後,使用磷酸鹽進行磷酸鹽處理的方法等。In addition, when the oxidation-treated plating film 12 is an oxidation-treated plating film containing at least P, a method of performing galvanization or tin plating on the metal plate 11 as necessary, followed by a phosphate treatment with phosphate, and the like can be mentioned.

此外,於本實施形態中,亦可採用如在金屬板11上直接設置氧化處理鍍敷皮膜12之構成,而基於良好地形成氧化處理鍍敷皮膜12之觀點,係以預先在金屬板11上形成作為基底層之含有鋅的基底層後,在含有該鋅的基底層上形成氧化處理鍍敷皮膜12為佳。In addition, in this embodiment, it is also possible to adopt a structure in which an oxidation-treated plating film 12 is directly provided on the metal plate 11. Based on the viewpoint that the oxidation-treated plating film 12 is formed well, the metal plate 11 is preliminarily formed After forming the base layer containing zinc as the base layer, it is preferable to form the oxidation-treated plating film 12 on the base layer containing the zinc.

作為形成含有鋅的基底層之方法,不特別限定,可舉出對金屬板11進行脫脂處理,接著視需求實施蝕刻或酸洗後,進行鋅的置換鍍敷的方法。鋅的置換鍍敷可藉由實施經過第一鋅置換處理(1st鋅酸鹽處理)、硝酸鋅剝離處理(去鋅酸鹽處理)、第二鋅置換處理(2nd鋅酸鹽)之各步驟的雙重鋅酸鹽處理來進行。此時,於各步驟之處理後系實施水洗處理。The method of forming a zinc-containing underlayer is not particularly limited, and a method of degreasing the metal plate 11, followed by etching or pickling as necessary, followed by displacement plating of zinc is mentioned. Zinc displacement plating can be carried out through the first zinc displacement treatment (1st zincate treatment), zinc nitrate stripping treatment (dezincate treatment), and second zinc displacement treatment (2nd zincate). Double zincate treatment is performed. At this time, water washing treatment is implemented after the treatment of each step.

根據如以上之本實施形態之用於電子零件搬送用機架的基材10,由於強度及硬度較高,且對構成樹脂吸附部21之吸附用樹脂顯示適當的密接強度,而能夠適用於作為構成供搬送各種電子零件之電子零件搬送用機架用的支持基材,尤其可適用於供搬送微LED、電容器、半導體元件等微細的電子零件之電子零件搬送用機架用途。 [實施例]According to the base material 10 used for the electronic component transport frame of the present embodiment as described above, since it has high strength and hardness, and exhibits appropriate adhesion strength to the resin for adsorption constituting the resin adsorption portion 21, it can be suitably used as It constitutes a support base material for electronic parts transport racks for transporting various electronic parts, and is especially suitable for electronic parts transport racks for transporting micro LEDs, capacitors, semiconductor components and other fine electronic parts. [Example]

以下舉出實施例,對本發明更具體地加以說明,惟本發明非限定於此等實施例。 此外,各特性之評定方法如下。Examples are given below to illustrate the present invention in more detail, but the present invention is not limited to these examples. In addition, the evaluation method of each characteristic is as follows.

<XPS測定> 針對形成於實施例及比較例中所得之氧化處理鍍敷板(就比較例1中未進行氧化處理之鍍敷板、比較例3,4中耐酸鋁處理板,以下就各測定、評定之說明係相同)的表面之氧化處理鍍敷皮膜(就比較例3,4中耐酸鋁處理面,以下就各測定、評定之說明係相同)的表面,使用X光光電子光譜裝置(ULVAC-PHI公司製,型號:VersaProbeII)分別測定Ni2p3/2、Sn3d5/2、P2p、O1s的波峰。 全元素中之氧元素的存在比例係藉由氬濺鍍蝕刻2nm後進行測定,由O1s峰面積佔Ni2p3/2、Sn3d5/2、P2p、O1s的峰面積之總和的比例來算出(總元素中之氧元素的存在比例的測定結果係針對實施例7,8、比較例2、實施例9,10,16~18進行)。 P的氧化物的比例係將上述P2p的波峰分離成對應各化學狀態的波形,由P的氧化物之峰面積佔P2p之峰面積的比例來算出。 NiO的狀態比例及Ni2 O3 的狀態比例係將Ni2p3/2的波峰分離成對應各化學狀態的波形,由對應NiO之峰面積或對應Ni2 O3 之峰面積佔Ni2p3/2之峰面積的比例來算出。 SnO的狀態比例及SnO2 的狀態比例係將Sn3d5/2的波峰分離成對應各化學狀態的波形,對應SnO之峰面積或對應SnO2 之峰面積佔Sn3d5/2之峰面積的比例來算出。<XPS measurement> For the oxidation-treated plated plates formed in the examples and comparative examples (for the plated plates not subjected to oxidation treatment in Comparative Example 1, and the anodized aluminum treated plates in Comparative Examples 3 and 4, the following measures and evaluations The description is the same) surface oxidation treatment plating film (for the anodized aluminum treatment surface in Comparative Examples 3 and 4, the following descriptions for each measurement and evaluation are the same) surface, using X-ray photoelectron spectroscopy (ULVAC-PHI) Manufactured by the company, model: VersaProbeII) Measure the peaks of Ni2p3/2, Sn3d5/2, P2p, and O1s respectively. The proportion of oxygen in all elements is measured by argon sputter etching after 2nm, and calculated from the proportion of the peak area of O1s to the sum of the peak areas of Ni2p3/2, Sn3d5/2, P2p, and O1s (in total The measurement results of the oxygen content ratio are performed for Examples 7, 8, Comparative Example 2, Examples 9, 10, 16-18). The ratio of P oxides is calculated by separating the above-mentioned P2p peaks into waveforms corresponding to each chemical state, and is calculated from the ratio of the peak area of P oxides to the peak area of P2p. The state ratio of NiO and the state ratio of Ni 2 O 3 separate the peak of Ni2p3/2 into waveforms corresponding to each chemical state. The peak area of NiO or the peak area of Ni 2 O 3 accounts for the peak area of Ni2p3/2. To calculate the ratio. State ratio of SnO and status proportion of SnO 2 tie separated peaks Sn3d5 / 2 is to correspond to each of the chemical state of the waveform, corresponding to SnO peak area or a corresponding SnO peak area 2 of representing the peak area Sn3d5 / 2 of the ratio calculated.

<三點彎曲試驗> 將實施例及比較例中所得之氧化處理鍍敷板切成50mm×50mm的大小,將50mm×50mm的大小之試料之相對向的2邊,在以一對支持構件(支持端子徑2mm、支持寬度40mm)支持的狀態下,以自基準面浮起的狀態載置,並於此狀態下,對氧化處理鍍敷板之形成有氧化處理鍍敷皮膜的面之相對向的2邊之中央附近,藉由半徑5mm、寬度50mm的壓頭,以2mm/分之條件施加60N的負載,來進行三點彎曲試驗。然後,針對三點彎曲試驗前後之氧化處理鍍敷板,使用光學干涉條紋計(製品名「平面度檢查器(FT‐M100P)」,溝尻光學工業所股份有限公司製)觀測干涉條紋的變化,依以下基準進行評定。於三點彎曲試驗前後,若未觀測到干涉條紋的變化,可判斷為彎曲強度優良;另一方面,觀測到干涉條紋的變化時,則可判斷為彎曲強度不良。 〇:於三點彎曲試驗前後,未觀測到干涉條紋的變化。 ×:於三點彎曲試驗前後,觀測到干涉條紋的變化。<Three-point bending test> The oxidation-treated plated plates obtained in the Examples and Comparative Examples were cut into a size of 50mm×50mm, and the two opposite sides of the sample with a size of 50mm×50mm were placed on a pair of support members (support terminal diameter 2mm, support width 40mm) supported, placed in a floating state from the reference surface, and in this state, near the center of the two opposing sides of the oxidation-treated plated sheet on which the oxidation-treated plating film is formed, borrow A three-point bending test was performed by an indenter with a radius of 5 mm and a width of 50 mm, and a load of 60 N was applied at 2 mm/min. Then, for the oxidation-treated plated plates before and after the three-point bending test, an optical interference fringe meter (product name "Flatness Checker (FT-M100P)", manufactured by Mizojiri Optical Industry Co., Ltd.) was used to observe the interference fringe changes. The following benchmarks are used for evaluation. Before and after the three-point bending test, if no change in interference fringes is observed, it can be judged that the bending strength is good; on the other hand, if the change in interference fringes is observed, it can be judged that the bending strength is bad. ○: No change in interference fringes was observed before and after the three-point bending test. ×: Changes in interference fringes were observed before and after the three-point bending test.

<劃傷試驗> 對實施例及比較例中所得之氧化處理鍍敷板之形成有氧化處理鍍敷皮膜的面,朝鉛直方向載置硬質合金針,在施加50g/kgf負載的狀態下進行刮擦試驗,並以雷射顯微鏡(OLYMPUS公司製,「LEXT(OLS3500)」)進行傷痕深度的測定。傷痕深度愈淺,則可判斷為硬度愈高。 〇:傷痕深度為1μm以下 ×:傷痕深度超過1μm<Scratch test> For the oxidation-treated plated sheets obtained in the Examples and Comparative Examples, the surface on which the oxidation-treated plating film was formed was placed with a cemented carbide needle in the vertical direction, and a scratch test was carried out under a load of 50g/kgf. A radio microscope (manufactured by OLYMPUS, "LEXT (OLS3500)") was used to measure the depth of the scar. The shallower the depth of the scar, the higher the hardness. ○: The depth of the scar is 1μm or less ×: The scar depth exceeds 1μm

<吸附用樹脂的密接性> 對實施例及比較例中所得之具備吸附用樹脂層的氧化處理鍍敷板的吸附用樹脂層塗佈SiCCAROL(Asahi Group Foods股份有限公司製),將前述吸附用樹脂層以切割器切成寬20mm,自端部以20mm的長度剝離。對剝離部將膠紙帶(日東電工CS系統股份有限公司製,「Super Cloth Tape No.757 Super」)黏貼於其兩面,使用Tensilon萬能材料試驗機RTC-1350A(ORIENTEC股份有限公司製)朝180°方向以50mm/分的速度進行上述吸附樹脂層之剝離強度(剝離負載)的測定。剝離強度值愈高,表示氧化處理鍍敷板與吸附用樹脂層的密接性愈高。此外,基於與吸附用樹脂層之密接性之觀點,剝離強度值宜為0.35N/20mm以上;又,如上述,在電子零件搬送用機架之製造步驟中,由於有時需剝離多餘的吸附用樹脂,而基於剝離此種多餘的吸附用樹脂時的剝離性之觀點,剝離強度值宜為2N/20mm以下。<Adhesion of resin for adsorption> SiCCAROL (manufactured by Asahi Group Foods Co., Ltd.) was coated on the adsorption resin layer of the oxidation-treated plated plate with the adsorption resin layer obtained in the Examples and Comparative Examples, and the adsorption resin layer was cut into a width of 20 mm with a cutter , Peel off from the end with a length of 20mm. Adhesive tape ("Super Cloth Tape No.757 Super", manufactured by Nitto Denko CS Systems Co., Ltd.) on both sides of the peeling part, using Tensilon Universal Material Testing Machine RTC-1350A (manufactured by ORIENTEC Co., Ltd.) to 180 The measurement of the peeling strength (peeling load) of the above-mentioned adsorption resin layer was performed at a speed of 50 mm/min in the ° direction. The higher the peel strength value, the higher the adhesion between the oxidation-treated plated plate and the resin layer for adsorption. In addition, from the viewpoint of adhesion to the resin layer for adsorption, the peel strength value should preferably be 0.35N/20mm or more; and, as mentioned above, in the manufacturing steps of the electronic component transport frame, it is sometimes necessary to peel off excess adsorption. Resin is used, and from the viewpoint of peelability when peeling off such excess resin for adsorption, the peel strength value is preferably 2N/20mm or less.

《實施例1》 準備厚度0.68mm的鋁板(Al#5000)。然後,對準備之鋁板進行脫脂,依序進行蝕刻、去污、1st鋅酸鹽、脫鋅酸鹽、2nd鋅酸鹽之各前處理,並於各步驟間實施水洗後,使用Ni-P鍍敷浴(周知之蘋果酸‐琥珀酸系無電解Ni-P鍍敷浴),藉由無電解電鍍於基材上形成厚度10μm的Ni-P合金鍍敷層(P的含量:12.0~12.5重量%)。其次,藉由將形成有Ni-P合金鍍敷層的鋁板,以浸漬溫度25℃、浸漬時間30分鐘之條件浸漬於30重量%的H2 O2 水溶液中來進行氧化處理,而得到在鋁上,隔著含有鋅的基底層形成有厚度10μm之氧化處理鍍敷皮膜而成的氧化處理鍍敷板。然後,針對所得氧化處理鍍敷板,依循上述方法,由XPS測定的結果算出全部元素中之氧元素的存在比例、P的氧化物的狀態比例、NiO的狀態比例及Ni2 O3 的狀態比例,並進行三點彎曲試驗及劃傷試驗。將結果示於表1。"Example 1" An aluminum plate (Al#5000) having a thickness of 0.68 mm was prepared. Then, the prepared aluminum plate is degreased, followed by etching, decontamination, 1st zincate, dezincate, and 2nd zincate pretreatments. After washing in each step, use Ni-P plating Plating bath (the well-known malic acid-succinic acid electroless Ni-P plating bath), a Ni-P alloy plating layer with a thickness of 10μm is formed on the substrate by electroless plating (P content: 12.0~12.5 weight %). Next, the aluminum plate on which the Ni-P alloy plating layer is formed is immersed in a 30% by weight H 2 O 2 aqueous solution under the conditions of an immersion temperature of 25° C. and an immersion time of 30 minutes to perform oxidation treatment. Above, an oxidation-treated plated sheet formed by forming an oxidation-treated plating film with a thickness of 10 μm via a base layer containing zinc. Then, for the obtained oxidation-treated plated board, following the above method, the proportion of oxygen in all elements, the proportion of P oxide, the proportion of NiO, and the proportion of Ni 2 O 3 are calculated from the results of XPS measurement. And carry out three-point bending test and scratch test. The results are shown in Table 1.

其次,藉由在上述所得之氧化處理鍍敷板之形成有氧化處理鍍敷層的面形成由作為吸附用樹脂之非聚矽氧系樹脂(聚醚系樹脂)所構成的層,並以110℃、10分鐘之條件加熱,使非聚矽氧系樹脂硬化,而於氧化處理鍍敷板上形成厚度100μm的非聚矽氧系樹脂層(吸附用樹脂層)。然後,對具備非聚矽氧系樹脂層之氧化處理鍍敷板,依循上述方法進行剝離強度的測定。將結果示於表1。Next, a layer composed of a non-polysiloxane resin (polyether resin) as an adsorption resin was formed on the surface of the oxidation-treated plated plate obtained above on which the oxidation-treated plating layer was formed, and heated at 110°C. , Heat for 10 minutes to harden the non-silicone resin, and form a 100μm thick non-silicone resin layer (resin layer for adsorption) on the oxidation-treated plating plate. Then, the peeling strength of the oxidation-treated plated board provided with the non-silicone-based resin layer was measured according to the above method. The results are shown in Table 1.

《實施例2~7》 除將使用H2 O2 水溶液之氧化處理的條件分別變更為表1所示條件以外,係以與實施例1同樣的方式製造氧化處理鍍敷板及具備非聚矽氧系樹脂層之氧化處理鍍敷板,並同樣地進行評定。將結果示於表1。"Examples 2 to 7" Except that the conditions of the oxidation treatment using the H 2 O 2 aqueous solution were changed to the conditions shown in Table 1, the oxidation treatment plated plate and the non-polysiloxane were produced in the same manner as in Example 1. It is the oxidation-treated plated board of the resin layer and evaluated in the same way. The results are shown in Table 1.

《實施例8》 準備對低碳鋁鎮靜鋼之冷軋板(厚度0.25mm)實施退火而得的鋼板。然後,對準備之鋼板進行脫脂、水洗、酸洗、水洗後,使用下述之鍍錫浴,依下述鍍敷條件得到形成有鍍錫層的鋼板,並以浸漬溫度70℃、浸漬時間20分之條件予以浸漬於用氫氧化鈉(NaOH)調整成pH13之6重量%的次氯酸鈉(NaClO)水溶液中來進行氧化處理,而得到在鋼板上形成有厚度1.0μm之氧化處理鍍敷皮膜而成的氧化處理鍍敷板。然後,使用所得氧化處理鍍敷板,與實施例1同樣地進行評定,並使用所得氧化處理鍍敷板製造具備非聚矽氧系樹脂層之氧化處理鍍敷板,並同樣地進行評定。將結果示於表1。 <鍍錫浴及鍍錫條件> 硫酸錫  80g/L 酚磺酸  60g/L 浴溫  40℃ 電流密度  10A/dm2 "Example 8" A steel sheet obtained by annealing a cold rolled sheet (thickness 0.25 mm) of low carbon aluminum killed steel was prepared. Then, after degreasing, washing, pickling, and washing the prepared steel sheet, use the following tin plating bath to obtain a steel sheet with a tin-plated layer under the following plating conditions, and set the immersion temperature to 70°C and the immersion time to 20 It is immersed in an aqueous solution of sodium hypochlorite (NaClO) adjusted to pH 13 with sodium hydroxide (NaOH) to be 6% by weight for oxidation treatment to obtain an oxidation-treated plating film with a thickness of 1.0 μm on the steel sheet. The oxidation treatment of the plated board. Then, the obtained oxidation-treated plated board was evaluated in the same manner as in Example 1, and the obtained oxidation-treated plated board was used to produce an oxidation-treated plated board provided with a non-polysiloxane-based resin layer and evaluated in the same manner. The results are shown in Table 1. <Tin plating bath and tin plating conditions> Tin sulfate 80g/L Phenolic sulfonic acid 60g/L Bath temperature 40℃ Current density 10A/dm 2

《比較例1》 除未進行使用H2 O2 水溶液之氧化處理以外,係以與實施例1同樣的方式製造鍍敷板及具備非聚矽氧系樹脂層之鍍敷板,並同樣地進行評定。將結果示於表1。"Comparative Example 1" Except that the oxidation treatment using the H 2 O 2 aqueous solution was not performed, a plated plate and a plated plate provided with a non-polysiloxane-based resin layer were produced in the same manner as in Example 1, and evaluated in the same manner. The results are shown in Table 1.

《比較例2》 除進行使用氫氧化鈉水溶液之鹼處理來替代使用H2 O2 水溶液之氧化處理以外,係以與實施例1同樣的方式製造鹼處理鍍敷板及具備非聚矽氧系樹脂層之鹼處理鍍敷板,並同樣地進行評定。此外,使用氫氧化鈉水溶液之鹼處理係使用pH=12的氫氧化鈉水溶液,並以95℃、30分之條件進行。將結果示於表1。"Comparative Example 2" Except for the alkali treatment using an aqueous sodium hydroxide solution instead of the oxidation treatment using an aqueous H 2 O 2 solution, an alkali-treated plated plate and non-polysiloxane resin were produced in the same manner as in Example 1. The alkali-treated plated board of the layer was evaluated in the same way. In addition, the alkali treatment using an aqueous sodium hydroxide solution uses an aqueous sodium hydroxide solution of pH=12, and is performed under conditions of 95°C and 30 minutes. The results are shown in Table 1.

《比較例3》 準備厚度0.5mm的鋁板(Al#5000)。然後,對準備之鋁板進行脫脂、水洗後,進行耐酸鋁處理,而得到耐酸鋁處理板。然後,使用所得耐酸鋁處理板,與實施例1同樣地進行評定,並使用所得耐酸鋁處理板製造具備非聚矽氧系樹脂層之耐酸鋁處理板,並同樣地進行評定。將結果示於表1。"Comparative Example 3" Prepare an aluminum plate (Al#5000) with a thickness of 0.5mm. Then, the prepared aluminum plate is degreased, washed with water, and then treated with anodized aluminum to obtain an anodized aluminum plate. Then, the obtained anodized aluminum treated board was evaluated in the same manner as in Example 1, and the obtained anodized aluminum treated board was used to produce an anodized aluminum treated board provided with a non-polysiloxane-based resin layer and evaluated in the same manner. The results are shown in Table 1.

Figure 02_image001
此外,表1中,「各元素之鍍敷皮膜最表面的氧化狀態比例」係表示各元素中之氧化物的比例(就表2亦同)。亦即,若為例如「NiO」、「Ni2 O3 」,係表示將最表面之全部Ni的化學狀態(Ni單質、Ni氧化物、Ni氧化物以外的Ni化合物)設為100%時之「NiO」之狀態的Ni,或「Ni2 O3 」之狀態的Ni所佔的比例(例如,實施例1中,「NiO」之狀態及「Ni2 O3 」之狀態以外的狀態的Ni係以80.20%的比例存在)。又,若為「P的氧化物」,係表示將最表面之全部P的化學狀態(P單質、P氧化物、P氧化物以外的P化合物)設為100%時之「P的氧化物」之狀態的P所佔的比例;若為「SnO」、「SnO2 」,則表示將最表面之全部Sn的化學狀態(Sn單質、Sn氧化物、Sn氧化物以外的Sn化合物)設為100%時之「SnO」之狀態的Sn,或「SnO2 」之狀態的Sn所佔的比例。
Figure 02_image001
In addition, in Table 1, the "proportion of oxidation state of the uppermost surface of the plating film of each element" indicates the proportion of oxides in each element (the same applies to Table 2). That is, if it is, for example, "NiO" or "Ni 2 O 3 ", it means that the chemical state of all Ni on the outermost surface (Ni element, Ni oxide, Ni compound other than Ni oxide) is set to 100% The ratio of Ni in the state of "NiO" or Ni in the state of "Ni 2 O 3 "(for example, in Example 1, the state of Ni in the state other than the state of "NiO" and the state of "Ni 2 O 3 " Department exists in the proportion of 80.20%). Also, if it is "P oxide", it means "P oxide" when the chemical state of all P on the top surface (P element, P oxide, P compound other than P oxide) is set to 100% The proportion of P in the state; if it is "SnO", "SnO 2 ", it means that the chemical state of all Sn on the top surface (Sn element, Sn oxide, Sn compound other than Sn oxide) is set to 100 % Sn in the state of "SnO" or the proportion of Sn in the state of "SnO 2 ".

如表1所示,具備包含選自Ni、Sn及P之至少1種元素的氧化處理鍍敷皮膜,且該氧化處理鍍敷皮膜的最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例為1%以上時,根據三點彎曲試驗之強度及根據劃傷試驗之硬度優良,且對吸附用樹脂之密接性(剝離強度)亦處於適當的範圍內,而為良好的結果(實施例1~8)。 另一方面,即使具備包含選自Ni、Sn及P之至少1種元素的氧化處理鍍敷皮膜時,但該氧化處理鍍敷皮膜的最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例未達1%時,對吸附用樹脂之密接性不充分(比較例1,2),而且,替代包含選自Ni、Sn及P之至少1種元素的氧化處理鍍敷皮膜而進行耐酸鋁處理時,結果根據三點彎曲試驗之強度及根據劃傷試驗之硬度較低,甚而對吸附用樹脂之密接性(剝離強度)過高(比較例3)。As shown in Table 1, there is an oxidation-treated plating film containing at least one element selected from Ni, Sn, and P, and all Ni elements on the outermost surface of the oxidation-treated plating film are Ni 2 O in the oxidation state of Ni 3 , or when the proportion of SnO 2 as Sn oxidation state among all Sn elements on the outermost surface is 1% or more, the strength according to the three-point bending test and the hardness according to the scratch test are excellent, and the resin for adsorption The adhesiveness (peel strength) is also within an appropriate range, which is a good result (Examples 1 to 8). On the other hand, even when an oxidation-treated plating film containing at least one element selected from Ni, Sn, and P is provided, all Ni elements on the outermost surface of the oxidation-treated plating film are Ni 2 O in the oxidation state of Ni 3 , or when the proportion of SnO 2 as the oxidation state of Sn in all the Sn elements on the outermost surface is less than 1%, the adhesion to the resin for adsorption is insufficient (Comparative Examples 1 and 2), and instead of containing When an oxidation-treated plating film of at least one element selected from Ni, Sn and P is applied to anodized aluminum treatment, the strength according to the three-point bending test and the hardness according to the scratch test are low, and it is even tightly bonded to the resin for adsorption The properties (peel strength) are too high (Comparative Example 3).

《實施例9》 準備厚度0.68mm的鋁板(Al#5000)。然後,對準備之鋁板進行脫脂,依序進行蝕刻、去污、1st鋅酸鹽、脫鋅酸鹽、2nd鋅酸鹽之各前處理,並於各步驟間實施水洗後,使用Ni-P鍍敷浴(周知之蘋果酸‐琥珀酸系無電解Ni-P鍍敷浴),藉由無電解電鍍於基材上形成厚度10μm的Ni-P合金鍍敷層(P的含量:12.0~12.5重量%)。其次,藉由將形成有Ni-P合金鍍敷層的鋁板,以浸漬溫度70℃、浸漬時間10分鐘之條件浸漬於15重量%的H2 O2 水溶液中來進行氧化處理,而得到在鋁上,隔著含有鋅的基底層形成有厚度10μm之氧化處理鍍敷皮膜而成的氧化處理鍍敷板。然後,針對所得氧化處理鍍敷板,依循上述方法,由XPS測定的結果算出全部元素中之氧元素的存在比例、P的氧化物的狀態比例、NiO的狀態比例及Ni2 O3 的狀態比例,並進行三點彎曲試驗及劃傷試驗。將結果示於表2。"Example 9" An aluminum plate (Al#5000) with a thickness of 0.68 mm was prepared. Then, the prepared aluminum plate is degreased, followed by etching, decontamination, 1st zincate, dezincate, and 2nd zincate pretreatments. After washing in each step, use Ni-P plating Plating bath (the well-known malic acid-succinic acid electroless Ni-P plating bath), a Ni-P alloy plating layer with a thickness of 10μm is formed on the substrate by electroless plating (P content: 12.0~12.5 weight %). Next, the aluminum plate on which the Ni-P alloy plating layer is formed is immersed in a 15% by weight H 2 O 2 aqueous solution under the conditions of an immersion temperature of 70°C and an immersion time of 10 minutes to perform oxidation treatment. Above, an oxidation-treated plated sheet formed by forming an oxidation-treated plating film with a thickness of 10 μm via a base layer containing zinc. Then, for the obtained oxidation-treated plated board, following the above method, the proportion of oxygen in all elements, the proportion of P oxide, the proportion of NiO, and the proportion of Ni 2 O 3 are calculated from the results of XPS measurement. And carry out three-point bending test and scratch test. The results are shown in Table 2.

其次,藉由在上述所得之氧化處理鍍敷板之形成有氧化處理鍍敷層的面形成由作為吸附用樹脂之二甲基矽氧烷(DMS)所構成的層,並以85℃、10分鐘之條件加熱,使由二甲基矽氧烷(DMS)所構成的層硬化,而於氧化處理鍍敷板上形成厚度100μm的聚二甲基矽氧烷(PDMS)層(吸附用樹脂層)。然後,對具備PDMS層之氧化處理鍍敷板,依循上述方法進行剝離強度的測定。將結果示於表2。Next, a layer composed of dimethylsiloxane (DMS) as an adsorption resin was formed on the surface of the oxidation-treated plated plate obtained above, on which the oxidation-treated plating layer was formed, and heated at 85°C for 10 minutes Under the conditions of heating, the layer composed of dimethylsiloxane (DMS) is hardened, and a polydimethylsiloxane (PDMS) layer (adsorption resin layer) with a thickness of 100μm is formed on the oxidation-treated plating plate. Then, for the oxidation-treated plated board with the PDMS layer, the peel strength was measured according to the above method. The results are shown in Table 2.

《實施例10~17》 除將使用H2 O2 水溶液之氧化處理的條件分別變更為表2所示條件以外,係以與實施例9同樣的方式製造氧化處理鍍敷板及具備PDMS層之氧化處理鍍敷板,並同樣地進行評定。將結果示於表2。"Examples 10-17" Except that the conditions of the oxidation treatment using the H 2 O 2 aqueous solution were changed to the conditions shown in Table 2, the oxidation treatment plated board and the oxidation treatment with PDMS layer were produced in the same manner as in Example 9 Treat the plated board and evaluate it in the same way. The results are shown in Table 2.

《實施例18》 準備對低碳鋁鎮靜鋼之冷軋板(厚度0.25mm)實施退火而得的鋼板。然後,對準備之鋼板進行脫脂、水洗、酸洗、水洗後,使用下述之鍍錫浴,依下述鍍敷條件得到形成有鍍錫層的鋼板,並以浸漬溫度70℃、浸漬時間20分之條件予以浸漬於6重量%的次氯酸鈉水溶液(NaClO)中來進行氧化處理,而得到在鋼板上形成有厚度1.0μm之氧化處理鍍敷皮膜而成的氧化處理鍍敷板。然後,使用所得氧化處理鍍敷板,與實施例9同樣地進行評定,並使用所得氧化處理鍍敷板製造具備PDMS層之氧化處理鍍敷板,並同樣地進行評定。將結果示於表2。 <鍍錫浴及鍍錫條件> 硫酸錫  80g/L 酚磺酸  60g/L 浴溫  40℃ 電流密度  10A/dm2 "Example 18" A steel sheet obtained by annealing a cold rolled sheet (thickness 0.25 mm) of low carbon aluminum killed steel was prepared. Then, after degreasing, washing, pickling, and washing the prepared steel sheet, use the following tin plating bath to obtain a steel sheet with a tin-plated layer under the following plating conditions, and set the immersion temperature to 70°C and the immersion time to 20 It is immersed in a 6 wt% sodium hypochlorite aqueous solution (NaClO) to perform oxidation treatment according to the conditions, and an oxidation-treated plated plate having an oxidation-treated plating film with a thickness of 1.0 μm is formed on a steel sheet. Then, using the obtained oxidation-treated plated board, evaluation was performed in the same manner as in Example 9, and the obtained oxidation-treated plated board was used to produce an oxidation-treated plated board provided with a PDMS layer, and the evaluation was performed in the same manner. The results are shown in Table 2. <Tin plating bath and tin plating conditions> Tin sulfate 80g/L Phenolic sulfonic acid 60g/L Bath temperature 40℃ Current density 10A/dm 2

《比較例4》 準備厚度0.68mm的鋁板(Al#5000)。然後,對準備之鋁板進行脫脂、水洗後,進行耐酸鋁處理,而得到耐酸鋁處理板。然後,使用所得耐酸鋁處理板,與實施例10同樣地進行評定,並使用所得耐酸鋁處理板製造具備PDMS層之耐酸鋁處理板,並同樣地進行評定。將結果示於表2。"Comparative Example 4" Prepare an aluminum plate (Al#5000) with a thickness of 0.68mm. Then, the prepared aluminum plate is degreased, washed with water, and then treated with anodized aluminum to obtain an anodized aluminum plate. Then, the obtained anodized aluminum treated board was evaluated in the same manner as in Example 10, and the obtained anodized aluminum treated board was used to produce a PDMS layer-equipped anodized aluminum treated board and evaluated in the same manner. The results are shown in Table 2.

Figure 02_image003
Figure 02_image003

如表2所示,具備包含選自Ni、Sn及P之至少1種元素的氧化處理鍍敷皮膜,且該氧化處理鍍敷皮膜的最表面之全部Ni元素中作為Ni氧化狀態之Ni2 O3 的狀態比例,或最表面之全部Sn元素中作為Sn氧化狀態之SnO2 的狀態比例為1%以上時,根據三點彎曲試驗之強度及根據劃傷試驗之硬度優良,且對吸附用樹脂之密接性(剝離強度)亦處於適當的範圍內,而為良好的結果(實施例9~18)。 另一方面,替代包含選自Ni、Sn及P之至少1種元素的氧化處理鍍敷皮膜而進行耐酸鋁處理時,對吸附用樹脂之密接性(剝離強度)雖良好,但根據三點彎曲試驗之強度及根據劃傷試驗之硬度為較低之結果(比較例4)。As shown in Table 2, there is an oxidation-treated plating film containing at least one element selected from Ni, Sn, and P, and Ni 2 O in the oxidation state of Ni among all the Ni elements on the outermost surface of the oxidation-treated plating film 3 , or when the proportion of SnO 2 as Sn oxidation state among all Sn elements on the outermost surface is 1% or more, the strength according to the three-point bending test and the hardness according to the scratch test are excellent, and the resin for adsorption The adhesiveness (peel strength) was also within an appropriate range, which was a good result (Examples 9-18). On the other hand, when anodized aluminum treatment is performed instead of an oxidation-treated plating film containing at least one element selected from Ni, Sn, and P, the adhesion (peel strength) to the resin for adsorption is good, but according to three-point bending The strength of the test and the hardness according to the scratch test are lower results (Comparative Example 4).

10:用於電子零件搬送用機架的基材 11:金屬板 12:氧化處理鍍敷皮膜 20:樹脂層 21:樹脂吸附部 30:成形用模具 31:模穴 40:電子零件搬送用機架 50:貯存區 60:電子零件 70:電路基板 10: Base material for electronic parts transport rack 11: metal plate 12: Oxidation treatment plating film 20: Resin layer 21: Resin adsorption part 30: Mold for forming 31: Mould cavity 40: Rack for conveying electronic parts 50: storage area 60: Electronic parts 70: Circuit board

圖1為本實施形態之用於電子零件搬送用機架的基材的剖面圖。 圖2為表示本實施形態之電子零件搬送用機架的製造方法的圖。 圖3為表示使用本實施形態之電子零件搬送用機架之電子零件的搬送方法的圖。Fig. 1 is a cross-sectional view of a base material used in a frame for conveying electronic parts according to this embodiment. Fig. 2 is a diagram showing a method of manufacturing the electronic component transport rack of the present embodiment. Fig. 3 is a diagram showing a method of transporting electronic components using the electronic component transport rack of the present embodiment.

Claims (10)

一種用於電子零件搬送用機架的基材,其係使用於具備供吸附電子零件之樹脂吸附部之電子零件搬送用機架的用於電子零件搬送用機架的基材,其中,前述用於電子零件搬送用機架的基材係用以支持前述樹脂吸附部,且具備:金屬板,及形成於前述金屬板上且包含選自Ni、Sn及P之至少1種元素的氧化處理鍍敷皮膜;前述氧化處理鍍敷皮膜的最表面之全部Ni元素中作為Ni氧化狀態之Ni2O3的狀態比例,或前述氧化處理鍍敷皮膜的最表面之全部Sn元素中作為Sn氧化狀態之SnO2的狀態比例為1%以上且72.6%以下。 A substrate for a rack for transporting electronic parts, which is used for a substrate for a rack for transporting electronic parts that is equipped with a resin adsorbing portion for adsorbing electronic parts. The base material of the electronic component transport frame is used to support the aforementioned resin adsorption part, and is provided with: a metal plate, and an oxidation treatment plating formed on the aforementioned metal plate and containing at least one element selected from Ni, Sn, and P Coating film; the ratio of the state ratio of Ni 2 O 3 as the oxidation state of Ni in all the Ni elements on the outermost surface of the aforementioned oxidation-treated plating film, or the ratio of all the Sn elements on the outermost surface of the aforementioned oxidation-treated plating film as the Sn oxidation state The state ratio of SnO 2 is 1% or more and 72.6% or less. 如請求項1之用於電子零件搬送用機架的基材,其中前述氧化處理鍍敷皮膜的最表面之氧元素的存在比例為40atom%以上。 The base material for the electronic component conveyance rack of claim 1, wherein the oxygen element on the outermost surface of the oxidation treatment plating film is 40 atom% or more. 如請求項1或2之用於電子零件搬送用機架的基材,其中前述氧化處理鍍敷皮膜為至少含有Ni的氧化處理鍍敷皮膜,前述氧化處理鍍敷皮膜的最表面之Ni的NiO與Ni2O3的狀態比,以「NiO:Ni2O3」之比計為11.0:1.0~1.0:99.0。 According to claim 1 or 2, the base material for electronic parts transport racks, wherein the oxidation-treated plating film is an oxidation-treated plating film containing at least Ni, and the uppermost surface of the oxidation-treated plating film is NiO state ratio of Ni 2 O 3, with "NiO: Ni 2 O 3" in terms of the ratio of 11.0: 1.0 to 1.0: 99.0. 如請求項1或2之用於電子零件搬送用機架的基材,其中前述氧化處理鍍敷皮膜為至少含有Ni-P合金的氧化處理鍍敷皮膜。 According to claim 1 or 2, the base material for the electronic component conveyance rack, wherein the oxidation-treated plating film is an oxidation-treated plating film containing at least a Ni-P alloy. 如請求項1或2之用於電子零件搬送用機架的基材,其中前述氧化處理鍍敷皮膜中之全部P元素中處於氧化狀態之P的氧化物的狀態比例為21%以上。 According to claim 1 or 2, the base material for the electronic component transport frame, wherein the state ratio of the oxide of P in the oxidized state among all the P elements in the oxidation-treated plating film is 21% or more. 如請求項1或2之用於電子零件搬送用機架的基材,其中前述氧化處理鍍敷皮膜的厚度為1~40μm。 Such as claim 1 or 2 for the base material for the electronic parts conveyance frame, wherein the thickness of the aforementioned oxidation-treated plating film is 1-40 μm. 如請求項1或2之用於電子零件搬送用機架的基材,其中前述金屬板為鋁板。 Such as claim 1 or 2 for the base material for the electronic component conveying rack, wherein the aforementioned metal plate is an aluminum plate. 如請求項1或2之用於電子零件搬送用機架的基材,其中,在前述金屬板上進一步具備含有鋅的基底層,前述氧化處理鍍敷皮膜係形成於前述基底層上。 According to claim 1 or 2, a base material for a rack for conveying electronic parts, wherein the metal plate further includes a base layer containing zinc, and the oxidation-treated plating film is formed on the base layer. 如請求項1或2之用於電子零件搬送用機架的基材,其中,相對於構成前述樹脂吸附部的樹脂吸附用樹脂層之剝離強度值為0.35N/20mm以上。 According to claim 1 or 2, a base material for a rack for conveying electronic parts, wherein the peel strength value with respect to the resin layer for resin adsorption constituting the resin adsorption portion is 0.35N/20mm or more. 一種電子零件搬送用機架,其係在如請求項1或2之用 於電子零件搬送用機架的基材上具備供吸附電子零件的樹脂吸附部。A rack for conveying electronic parts, which is used as claim 1 or 2 The base material of the electronic component conveyance rack is provided with a resin suction part for suction of electronic components.
TW108127377A 2018-08-01 2019-08-01 Base material for electronic parts transport rack TWI705888B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018145401 2018-08-01
JP2018-145401 2018-08-01

Publications (2)

Publication Number Publication Date
TW202015908A TW202015908A (en) 2020-05-01
TWI705888B true TWI705888B (en) 2020-10-01

Family

ID=69231839

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108127377A TWI705888B (en) 2018-08-01 2019-08-01 Base material for electronic parts transport rack

Country Status (3)

Country Link
JP (1) JP7401436B2 (en)
TW (1) TWI705888B (en)
WO (1) WO2020027209A1 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060742A (en) * 1983-09-14 1985-04-08 Matsushita Electronics Corp Lead frame
JPH10230562A (en) * 1996-12-17 1998-09-02 Tokai Rubber Ind Ltd Metal product having rubber and/or resin peelable surface, and its production
US8323769B2 (en) * 2007-08-31 2012-12-04 Atotech Deutschland Gmbh Methods of treating a surface to promote metal plating and devices formed
CN104388920A (en) * 2014-11-12 2015-03-04 华南理工大学 Chromate-free passivation method for chemically-plated Ni-P coating
TW201511147A (en) * 2013-09-09 2015-03-16 Toshiba Kk Semiconductor manufacturing apparatus
JP6060742B2 (en) 2013-03-08 2017-01-18 ライオン株式会社 Liquid composition for external use
JP2018056247A (en) * 2016-09-27 2018-04-05 Ngkエレクトロデバイス株式会社 Electronic component housing package, electronic device and manufacturing method of electronic component housing package

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287679A (en) * 2009-06-10 2010-12-24 Elpida Memory Inc Transfer tool

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060742A (en) * 1983-09-14 1985-04-08 Matsushita Electronics Corp Lead frame
JPH10230562A (en) * 1996-12-17 1998-09-02 Tokai Rubber Ind Ltd Metal product having rubber and/or resin peelable surface, and its production
US8323769B2 (en) * 2007-08-31 2012-12-04 Atotech Deutschland Gmbh Methods of treating a surface to promote metal plating and devices formed
JP6060742B2 (en) 2013-03-08 2017-01-18 ライオン株式会社 Liquid composition for external use
TW201511147A (en) * 2013-09-09 2015-03-16 Toshiba Kk Semiconductor manufacturing apparatus
CN104388920A (en) * 2014-11-12 2015-03-04 华南理工大学 Chromate-free passivation method for chemically-plated Ni-P coating
JP2018056247A (en) * 2016-09-27 2018-04-05 Ngkエレクトロデバイス株式会社 Electronic component housing package, electronic device and manufacturing method of electronic component housing package

Also Published As

Publication number Publication date
WO2020027209A1 (en) 2020-02-06
JPWO2020027209A1 (en) 2021-08-19
JP7401436B2 (en) 2023-12-19
TW202015908A (en) 2020-05-01

Similar Documents

Publication Publication Date Title
JP6283664B2 (en) Copper foil, copper foil with carrier foil and copper clad laminate
JP6945523B2 (en) Surface-treated copper foil, copper foil with carrier, and methods for manufacturing copper-clad laminates and printed wiring boards using them.
JP5392732B2 (en) Copper surface-to-resin adhesive layer, wiring board, and adhesive layer forming method
TWI566647B (en) Surface treatment of copper foil and the use of its laminate, printed wiring board, electronic equipment, and printing wiring board manufacturing methods
JP5830635B1 (en) Ultra-thin copper foil with carrier, and copper-clad laminate, printed wiring board and coreless board manufactured using the same
TWI539875B (en) An electronic circuit and an electrolytic copper foil or rolled copper foil using a method of forming such electronic circuits
JP2005344174A (en) Surface-treated copper foil, flexible copper-clad laminate manufactured using the same, and film carrier tape
CN102203326A (en) Ultrathin copper foil with carrier, and copper laminated board or printed wiring board
JP5666384B2 (en) Ultrathin copper foil with support and method for producing the same
JP4824828B1 (en) Composite metal foil, method for producing the same, and printed wiring board
JP5473838B2 (en) Composite metal layer with support metal foil, wiring board using the same and manufacturing method thereof, and manufacturing method of semiconductor package using the wiring board
JP2016188436A (en) Copper foil for printed circuit
TWI705888B (en) Base material for electronic parts transport rack
JP2016003378A (en) Surface-treated copper foil, production method thereof and laminate
JP4564336B2 (en) Copper-clad laminate for COF and carrier tape for COF
JP4762533B2 (en) Copper metallized laminate and method for producing the same
JP5650023B2 (en) Copper foil for printed wiring board and laminated board using the same
TW201840258A (en) Wiring board manufacturing method
TWI415742B (en) A method for manufacturing fine grain copper foil with high peel strength and environmental protection for printed circuit board tool
JP2012096527A (en) Composite metal foil, method for manufacturing the same, and printed wiring board
JP5746876B2 (en) Method for forming an electronic circuit
CN117941472A (en) Ultra-thin copper foil with carrier foil and method for manufacturing embedded substrate by using the same
JP2003158039A (en) Conductive film carrier and method of manufacturing multilayer ceramic electronic component using the same
JP2006159631A (en) Copper metallized laminated sheet and its manufacturing method
JP2005072425A (en) Metal foil laminate and method for manufacturing the same, and multilayer substrate using the same