WO2020027209A1

WO2020027209A1 - Base material for electronic parts transport jig

Info

Publication number: WO2020027209A1
Application number: PCT/JP2019/030049
Authority: WO
Inventors: 陽平吉松; 隆広吉田; 哲平黒川
Original assignee: 東洋鋼鈑株式会社
Priority date: 2018-08-01
Filing date: 2019-07-31
Publication date: 2020-02-06
Also published as: TWI705888B; JPWO2020027209A1; TW202015908A; JP7401436B2

Abstract

Provided is a base material for an electronic parts transport jig, the base material being for use in an electronic parts transport jig and comprising a resin suction portion for suctioning an electronic part, wherein: the base material for the electronic parts transport jig comprises a metal plate and an oxidation plating film that is formed on the metal plate and includes at least one element selected from Ni, Sn, and P, the metal plate and oxidation plating film being used to support the resin suction portion; and the state ratio of Ni₂O₃ as Ni in an oxidized state among all Ni elements in the outermost surface of the oxidation plating film, or the state ratio of SnO₂ as Sn in an oxidized state among all Sn elements in the outermost surface of the oxidation plating film, is 1% or higher.

Description

Substrates for jigs for transporting electronic components

The present invention relates to a substrate for an electronic component transport jig, which is provided with a resin suction portion for absorbing an electronic component and is used for an electronic component transport jig.

Conventionally, a transfer jig has been used as a jig for lifting a semiconductor chip and transferring it to a predetermined position. In such a transfer jig, the tip is brought into contact with the vicinity of the center of the semiconductor chip, and the suction hole is made in a vacuum state, so that the semiconductor chip can be transferred while being sucked.

On the other hand, in recent years, chip-on-chip technology for flip-chip mounting by forming through electrodes in the chip and bump connection has been developed in order to realize multifunctional and high speed of the semiconductor chip and accompanying high density mounting. is there. A semiconductor chip having such a through electrode has a bump pad for connection on the chip surface, but projects higher than a connection pad of a conventional semiconductor chip in order to bond with a bump pad of a semiconductor chip stacked vertically. In many cases, the structure is changed.

Therefore, a transfer jig that performs transfer using a vacuum state may not be suitable for transfer of a semiconductor chip having such a through electrode, and an adhesive such as a resin is used as a transfer jig instead of this. An adsorption method has been proposed (for example, see Patent Document 1). However, in the technique of Patent Document 1, the strength and hardness of a substrate for supporting a resin for adsorption and the adhesion to a resin have not been studied.

JP 2010-287679 A

SUMMARY OF THE INVENTION An object of the present invention is to provide a base material for a jig for transporting electronic components, which has high strength and hardness and exhibits appropriate adhesion strength to a resin constituting a resin suction portion for adsorbing electronic components. .

The present inventors have conducted intensive studies to achieve the above object, and as a result, provided with a resin suction portion for sucking an electronic component, a metal plate as a base material for a jig for transporting an electronic component, An oxidized plating film containing at least one element selected from the group consisting of Ni, Sn, and P, and oxidized in all Ni elements on the outermost surface of the oxidized plating film. By controlling the state ratio of Ni ₂ O ₃ or the state ratio of SnO ₂ as Sn in an oxidized state in all Sn elements on the outermost surface of the oxidized plating film to 1% or more. The inventors have found that the above object can be achieved, and have completed the present invention.

That is, according to the present invention, provided with a resin suction portion for sucking an electronic component, used for an electronic component transport jig, a substrate for an electronic component transport jig,
The substrate for the electronic component transport jig is used to support the resin suction unit,
A metal plate, and an oxidized plating film formed on the metal plate and containing at least one element selected from Ni, Sn and P,
As the state ratio of Ni ₂ O ₃ as Ni in the oxidized state in all Ni elements on the outermost surface of the oxidized plating film, or as Sn in the oxidized state in all Sn elements on the outermost surface of the oxidized plating film And a substrate for electronic component conveying jigs, wherein the state ratio of SnO ₂ is 1% or more.
The state ratio of Ni ₂ O ₃ as Ni in the oxidized state in all Ni elements on the outermost surface of the oxidized plating film, or the oxidized state in all Sn elements on the outermost surface of the oxidized plating film The state ratio of SnO ₂ as Sn is preferably more than 5%.

In the substrate for a jig for transporting electronic components of the present invention, it is more preferable that the proportion of the oxygen element present on the outermost surface of the oxidized plating film is 40 atom% or more.
Preferably, the oxidized plating film is an oxidized plating film containing at least Ni, and the state ratio between NiO and Ni ₂ O ₃ in Ni on the outermost surface of the oxidized plating film is “NiO: Ni”. a ratio of ₂ O ₃ ", 11.0 1.0 to 1.0: is preferably 99.0, more preferably 7.0: 1.8 to 23.8: 76.2, more preferably Is from 7.0: 1.8 to 27.4: 72.6.
Preferably, the oxidized plating film is an oxidized plating film containing at least a Ni—P alloy.
Preferably, the oxidized P oxide state in all P elements in the oxidized plating film has a state ratio of 21% or more.
Preferably, the thickness of the oxidized plating film is 1 to 40 μm.
Preferably, the metal plate is an aluminum plate.
It is preferable that the base material for a jig for transporting electronic components of the present invention further includes an underlayer containing zinc on the metal plate, and the oxidized plating film is formed on the underlayer.

According to the present invention, there is also provided an electronic component conveying jig provided with a resin sucking portion for adsorbing an electronic component on the electronic component conveying jig base material.

According to the present invention, the strength and hardness are high, a base material for an electronic component transport jig that exhibits an appropriate adhesion strength to a resin constituting a resin suction portion for absorbing an electronic component, and An electronic component transport jig obtained using a substrate for an electronic component transport jig can be provided.

FIG. 1 is a sectional view of a base material for a jig for transporting electronic components according to the present embodiment. FIG. 2 is a diagram illustrating a method of manufacturing the electronic component conveying jig according to the present embodiment. FIG. 3 is a diagram illustrating a method for transporting electronic components using the electronic component transport jig according to the present embodiment.

FIG. 1 is a cross-sectional view illustrating a configuration of a substrate 10 for a jig for transporting electronic components according to the present embodiment. As shown in FIG. 1, a substrate 10 for a jig for transporting electronic components of the present embodiment has a metal plate 11 on which an oxidized plating film 12 is formed as an outermost layer. The oxidized plating film 12 includes at least one element selected from Ni, Sn, and P, and the state ratio of Ni ₂ O ₃ as Ni in an oxidized state in all Ni elements on the outermost surface, or the outermost surface In the above, the state ratio of SnO ₂ as Sn in the oxidized state in all Sn elements is 1% or more.

<Manufacturing method of electronic component conveying jig>
First, before the substrate 10 for an electronic component transport jig of the present embodiment is described in detail, the manufacture of the electronic component transport jig obtained using the electronic component transport jig 10 of the present embodiment is described. The method will be described with reference to FIG.

First, as shown in FIG. 2A, a substrate 10 (hereinafter, appropriately referred to as “substrate 10”) for an electronic component conveying jig of the present embodiment is prepared. Next, as shown in FIG. 2B, a resin layer 20 made of a resin for adsorption is formed. The resin layer 20 is formed on the surface of the substrate 10 on which the oxidized plating film 12 (see FIG. 1) is formed.

Next, as shown in FIG. 2C, the shaping mold 30 having the plurality of cavities 31 is pressed against the resin layer 20 formed on the base material 10, and heated while applying pressure, so that the resin is heated. The resin for adsorption forming the layer 20 is molded into a shape corresponding to the cavity 31, whereby a plurality of resin adsorption portions 21 made of the resin for adsorption are formed on the substrate 10 as shown in FIG. The formed electronic component conveying jig 40 is manufactured.

In addition, from the viewpoint of further improving the electronic component transfer performance, the electronic component transfer jig 40 obtained in this manner is provided around the region where the plurality of resin suction portions 21 are formed (that is, near the center). It is preferable to remove unnecessary adsorption resin remaining on the substrate 10 by peeling it off from the substrate 10 or the like.

Then, the electronic component conveying jig 40 manufactured as described above is pressed against a plurality of electronic components 60 placed on the stocker 50 as shown in FIG. The plurality of electronic components 60 are sucked by the suction unit 21, and as shown in FIG. 3B, the plurality of electronic components 60 are transported onto a circuit board 70 on which the electronic components 60 are mounted. By being pressed upward, the plurality of electronic components 60 are used for mounting on the circuit board 70.

The adsorption resin for forming the resin layer 20 is not particularly limited. However, from the viewpoint that the resin has appropriate tackiness, and thus can more suitably transport electronic components, polydimethylsiloxane ( Silicone resin such as PDMS) can be used. As the silicone resin, in addition to polydimethylsiloxane, a siloxane bond as a main skeleton, and any one of a hydroxy group, an amine group, a methyl group, a carboxy group, and a ketone group as a functional group. What contains is preferably used.

Alternatively, a non-silicone resin may be used instead of the silicone resin, and examples of the non-silicone resin include a polyether resin and a polyester resin. It is suitable. As the polyether-based resin, those having an ether bond as a main skeleton and containing any one of a hydroxy group, an amine group, a methyl group, a carboxy group, and a ketone group as a functional group are preferable. As the polyester-based resin, those having an ester bond as a main skeleton and containing any one of a hydroxy group, an amine group, a methyl group, a carboxy group, and a ketone group as a functional group are preferable. It is. Further, as the non-silicone resin, a urethane resin, a polylactic acid resin, or a fluorine resin can be used. Examples of the urethane-based resin, polylactic acid-based resin, and fluorine-based resin include, for example, any one of a urethane bond, an ester bond, an ether bond, and an amide bond as a main skeleton, and a hydroxy group as a functional group. , An amine group, a methyl group, a carboxy group, and a ketone group are preferably used.

These adsorption resins may be either curable resins (thermosetting resins or ultraviolet-curing resins) or thermoplastic resins. For example, when a thermosetting resin is used as the resin for adsorption, in the step shown in FIG. 2C, a molding die 30 having a plurality of cavities 31 is formed on the resin formed on the base material 10. When pressed against the layer 20 and heated while applying pressure, it can be formed into a shape corresponding to the resin adsorption portion 21 and cured.

<Base 10 for jig for transporting electronic components>
As described above, the substrate 10 for the electronic component transport jig of the present embodiment is used for obtaining the electronic component transport jig 40 as shown in FIGS. 2 (A) to 2 (D). It is. Specifically, the base material 10 for the electronic component conveying jig of the present embodiment is used as a support base material for supporting the resin suction unit 21.

基材 The base material 10 for a jig for transporting electronic components according to the present embodiment has a metal plate 11 on which an oxidized plating film 12 is formed as an outermost layer, as shown in FIG.

The metal plate 11 is not particularly limited, and examples thereof include a steel plate, a stainless steel plate, a copper plate, an aluminum plate, an aluminum alloy plate, and a nickel plate. Among them, a steel plate, an aluminum plate, and an aluminum alloy plate are preferable because of their low price. Further, an aluminum plate or an aluminum alloy plate is preferable from the viewpoint that the weight of the electronic component transport jig 40 can be reduced, thereby reducing the energy required for transporting the electronic component. The thickness of the metal plate 11 is not particularly limited, but is preferably 0.3 to 2 mm, and more preferably 0.5 to 0.8 mm, from the viewpoint of handleability when transporting the electronic component.

The oxidized plating film 12 is a plating film formed on the metal plate 11, at least the surface of which is oxidized, and forms the outermost layer of the substrate 10. In the present embodiment, the oxidized plating film 12 includes at least one element selected from Ni, Sn and P (preferably includes at least one element selected from Ni and Sn). The state ratio of Ni ₂ O ₃ as Ni in the oxidized state in all Ni elements on the surface (namely, Ni alone, an oxide in an oxidized state other than Ni ₂ O ₃ such as NiO, and an oxide other than the oxide of Ni) State ratio of Ni ₂ O _{3 in} terms of Ni element with respect to the total of Ni compound and Ni ₂ O ₃ ) or state state of SnO ₂ as Sn in an oxidized state in all Sn elements on the outermost surface ( That, Sn alone and the oxide of states other than SnO _2, such as SnO, and Sn compounds other than oxides of Sn, to the sum of SnO _2, S in the Sn terms of elemental State ratio of O _2.) Are those wherein at least 1%.

According to the present embodiment, the oxidized plating film 12 is formed as the outermost layer on the metal plate 11 and the oxidized plating film 12 has such a configuration, whereby the base material 10 for the jig for transporting electronic components is formed. Can have high strength and hardness, and can exhibit appropriate adhesion strength to the resin for adsorption constituting the resin adsorption section 21. In particular, when manufacturing the electronic component transport jig 40, as shown in FIG. 2C, the molding die 30 is placed on the electronic component transport jig base 10 at a predetermined pressure. Therefore, it is required that the substrate 10 for the electronic component conveying jig should be one in which deformation, breakage, and scratches due to the pressing of the shaping mold 30 are effectively suppressed. In addition, since the base material 10 for the electronic component conveying jig supports the resin suction portion 21, it has excellent adhesion to the resin for suction forming the resin suction portion 21. Unnecessary suction resin remaining in portions other than the resin suction portion 21 (for example, a suction resin remaining around a region where a plurality of resin suction portions 21 are formed (that is, near the center)) In some cases, it is removed by peeling or the like, and therefore, it is required to exhibit sufficient adhesiveness to remove them properly (that is, the adhesive strength is not too high). Further, if the scratches occur in the process, there is a problem that the smoothness is deteriorated and the transport performance is deteriorated.

On the other hand, according to the present embodiment, by using the base material 10 for the electronic component conveying jig having the above-described configuration, the strength and hardness are high, and the resin for suction forming the resin suction portion 21 is used. In this case, it is possible to exhibit appropriate adhesion strength, and according to the present embodiment, such a problem is appropriately solved.

The oxidized plating film 12 includes at least one element selected from Ni, Sn, and P, and the state ratio of Ni ₂ O ₃ as Ni in an oxidized state in all Ni elements on the outermost surface, or the outermost surface It is sufficient that the state ratio of SnO ₂ as Sn in the oxidized state in all Sn elements is 1% or more, but a silicone resin is used as an adsorption resin for forming the resin adsorption section 21. When used, the state ratio of Ni ₂ O ₃ or the state ratio of SnO ₂ is more preferably in the range of 1.75 to 72.6%, and more than 5% and 72.6% or less. More preferably, it is even more preferably in the range of 7.5-49.4%. When a polyether-based resin, a polyester-based resin, a fluorine-based resin, a urethane-based resin, or a polylactic acid-based resin is used as an adsorption resin for forming the resin adsorption section 21, all Ni on the outermost surface is used. The state ratio of Ni ₂ O ₃ as Ni in an oxidized state in the element or the state ratio of SnO ₂ as Sn in an oxidized state in all Sn elements on the outermost surface is in the range of 7.5 to 100%. More preferably, it is more preferably in the range of 7.97 to 72.6%, and even more preferably in the range of 7.97 to 30%. If the state ratio of Ni ₂ O ₃ as Ni in the oxidized state in all Ni elements on the outermost surface or the state ratio of SnO ₂ as Sn in the oxidized state in all Sn elements on the outermost surface is too low, adsorption is caused. Adhesion to resin for use becomes insufficient.

When the oxidized plating film 12 is an oxidized plating film containing at least Ni, from the viewpoint that it can exhibit more appropriate adhesion strength to the resin for adsorption constituting the resin adsorption portion 21, The state ratio between NiO and Ni ₂ O ₃ in Ni on the outermost surface of the treated plating film is 11.0: 1.0 to 1.0: 99.0 in the ratio of “NiO: Ni ₂ O ₃ ”. The ratio is preferably 7.0: 1.8 to 23.8: 76.2, more preferably 7.0: 1.8 to 27.4: 72.6. The state ratio between NiO and Ni ₂ O ₃ is determined by performing X-ray photoelectron spectroscopy (XPS) measurement on the surface of the oxidized plating film 12 and calculating the integrated value of the peak of Ni alone, the integrated value of the NiO peak, obtains an integration value of the peak of Ni ₂ O _3, from these, determining and calculating the state ratio of NiO and _Ni 2 _{O 3} in the total Ni element in the outermost surface, and NiO, the state ratio of _Ni 2 _{O 3} Can be.

The oxidized plating film 12 has a state ratio of Ni ₂ O ₃ as Ni in an oxidized state in all Ni elements on the outermost surface, or SnO ₂ as Sn in an oxidized state in all Sn elements on the outermost surface. May be in the above range, but the proportion of the oxygen element on the outermost surface is preferably 40.0 atom% or more, more preferably 40.6 atom% or more, and still more preferably 43.0 atom%. % Or more. The upper limit of the proportion of the oxygen element in the outermost surface is not particularly limited, but is preferably 53 atom% or less, more preferably 45 atom% or less. By setting the proportion of the oxygen element on the outermost surface within the above range, the adhesion to the resin for adsorption can be further improved. In the present embodiment, the ratio of the oxygen element on the outermost surface of the oxidized plating film 12 is determined by performing X-ray photoelectron spectroscopy (XPS) measurement on the surface of the oxidized plating film 12. It can be obtained by calculating the peak integrated value of each oxide to be obtained and calculating the abundance ratio (atom%) of the oxygen element from the obtained peak integrated value.

Further, the oxidized plating film 12 may further contain Zn in addition to at least one element selected from Ni, Sn and P. In the case where the oxidized plating film 12 is an oxidized plating film further containing Zn, from the viewpoint that it can exhibit more appropriate adhesion strength to the resin for adsorption constituting the resin adsorption section 21, It is preferable that the state ratio of ZnO as Zn in an oxidized state in all Zn elements on the surface is 19% or more. The state ratio of ZnO ₂ as Zn in an oxidized state in all Zn elements on the outermost surface is preferably 1% or more, and more preferably 69% or more. The state ratio between ZnO and ZnO ₂ was determined by measuring the surface of the oxidized plating film 12 by X-ray photoelectron spectroscopy (XPS) measurement, X-ray photoelectron spectroscopy (XPS) measurement, and the integrated value of the peak of Zn alone. , ZnO peak integrated value and ZnO ₂ peak integrated value are calculated, and from these, the state ratio of ZnO and ZnO ₂ in all Zn elements on the outermost surface is calculated, and the state ratio between ZnO and ZnO ₂ is calculated. Can be requested.

When the oxidized plating film 12 is an oxidized plating film containing at least Sn, the oxidized plating film 12 is preferably oxidized from the viewpoint that it can exhibit more appropriate adhesion strength to the adsorption resin constituting the resin adsorption section 21. It is preferable that the state ratio of SnO as oxidized Sn in all Sn elements on the outermost surface of the treated plating film 12 is 19% or more. Further, the state ratio of SnO ₂ as Sn in the oxidized state in all Sn elements on the outermost surface of the oxidized plating film 12 is preferably 1% or more, and more preferably 69% or more. As for the state ratio between SnO and SnO ₂ , X-ray photoelectron spectroscopy (XPS) measurement was performed on the surface of the oxidized plating film 12, and the integrated value of the peak of Sn alone, the integrated value of the SnO peak, and SnO ₂ From these values, the state ratio of SnO and SnO ₂ in all Sn elements on the outermost surface is calculated, and the state ratio between SnO and SnO ₂ can be obtained.

When the oxidized plating film 12 is an oxidized plating film containing at least P, the oxidized plating film 12 is preferably oxidized from the viewpoint that it can exhibit more appropriate adhesion strength to the adsorption resin constituting the resin adsorption section 21. The state ratio of the oxide of P in the oxidized state in all P elements on the outermost surface of the treated plating film 12 is 21% or more, and more preferably 24% or more. The upper limit of the state ratio of the oxide of P in the oxidized state in all P elements is not particularly limited, but is preferably 97% or less, and more preferably 60% or less. The state ratio of the oxide of P can be determined by X-ray photoelectron spectroscopy (XPS) measurement in the same manner as described above.

Further, the oxidized plating film 12 can balance the strength, hardness, and adhesion to the resin for adsorption constituting the resin adsorption portion 21 to a higher degree, and furthermore, the flatness of the surface of the oxidized plating film 12 can be improved. From the viewpoint that finer electronic components can be transported with high precision, it is more preferable that the plating film is an oxidized plating film containing at least a Ni—P alloy. The state ratio between NiO and Ni ₂ O _{3 at} the outermost surface of the treated plating film 12 is 11.0: 1.0 to 1.0: 99.0 in the ratio of “NiO: Ni ₂ O ₃ ”. is there. More preferably, the ratio is 7.0: 1.8 to 23.8: 76.2, and further preferably, the ratio is 7.0: 1.8 to 27.4: 72.6. The state ratio between NiO and Ni ₂ O ₃ can be calculated based on the result of X-ray photoelectron spectroscopy (XPS) measurement, similarly to the above. Further, the content of P in the Ni—P alloy is preferably 1 to 13% by weight, more preferably 5 to 13% by weight, and still more preferably 8 to 13% by weight. The content ratio of P in the Ni-P alloy can be determined by X-ray photoelectron spectroscopy (XPS) measurement in the same manner as described above.

The thickness of the oxidized plating film 12 is not particularly limited, but is preferably from 1 to 40 μm, more preferably from 1 to 40 μm, from the viewpoint of making the strength and hardness of the substrate 10 for a jig for transporting electronic components more sufficient. The thickness is 20 μm, more preferably 1 to 10 μm, and still more preferably 5 to 10 μm.

The method for forming the oxidized plating film 12 on the metal plate 11 is not particularly limited. For example, when the oxidized plating film 12 is an oxidized plating film containing at least Ni, In addition, there is a method in which Ni plating is performed, and an oxidation treatment is performed on the formed Ni plating film. The method of the oxidation treatment is not particularly limited, but a method of performing a heat treatment on the formed Ni plating film or a treatment of immersing the Ni plating film in a liquid such as a hydrogen peroxide solution (H ₂ O ₂ ) or hypochlorite is used. And a method of performing steam treatment. These may be combined. The conditions for the heat treatment are not particularly limited, but the heat treatment temperature is preferably 130 to 300 ° C., and the heat treatment time is preferably 10 to 30 minutes. The conditions for the immersion in the hydrogen peroxide solution are not particularly limited, but the concentration of the hydrogen peroxide solution is preferably 1 to 35% by weight, more preferably 15 to 35% by weight, and the immersion temperature (peroxide The temperature of hydrogen water) is preferably 25 to 90 ° C, more preferably 25 to 70 ° C, and the immersion time is preferably 20 seconds to 120 minutes, more preferably 20 seconds to 60 minutes. The conditions for the steam treatment are not particularly limited, but are preferably 40 to 100% RH, more preferably 65 to 100% RH, and the steam temperature is preferably 40 to 120 ° C, more preferably 65 to 85%. The temperature and the treatment time are preferably 1 minute to 72 hours, more preferably 12 to 24 hours. When the oxidized plating film 12 contains Ni and P (that is, when it contains a Ni—P alloy), Ni—P plating is performed, and the Ni—P alloy plating film is formed. After forming the Ni—P alloy plating film, a method of performing a heat treatment, a method of immersing the Ni—P alloy plating film in a liquid such as a hydrogen peroxide solution (H ₂ O ₂ ), hypochlorite, or a steam treatment And the like. In this case, the conditions for the heat treatment, the treatment for immersion in the hydrogen peroxide solution, and the steam treatment can be the same as those described above.

When the oxidized plating film 12 is an oxidized plating film containing at least Zn, or an oxidized plating film containing at least Sn, Zn plating or Sn plating is formed on the metal plate 11. There is a method of performing an oxidation treatment on the Zn plating film and the Sn plating film formed by plating. The method of the oxidation treatment is not particularly limited, but a method of performing a heat treatment on the formed Zn plating film and the Sn plating film, a method of performing a treatment of dipping in a liquid such as a hydrogen peroxide solution, and a method of performing a steam treatment And the like. These may be combined. The conditions for the heat treatment, the treatment for immersion in a hydrogen peroxide solution, and the steam treatment can be the same as those described above.

When the oxidized plating film 12 is an oxidized plating film containing at least P, the metal plate 11 is subjected to Zn plating or Sn plating, if necessary, and then phosphate is used. And a method of performing a phosphate treatment.

Further, in the present embodiment, a configuration in which the oxidized plating film 12 is directly provided on the metal plate 11 may be adopted, but from the viewpoint of forming the oxidized plating film 12 well, the After forming a zinc-containing base layer as a base layer, it is preferable to form an oxidized plating film 12 on the zinc-containing base layer.

The method of forming the zinc-containing base layer is not particularly limited, but a method of performing a degreasing treatment on the metal plate 11, and then performing etching or pickling as needed, and then performing zinc displacement plating. Can be The displacement plating of zinc is performed by performing a double zincate process through a first zinc displacement process (1st zincate process), a zinc nitrate stripping process (dezincate process), and a second zinc displacement process (2nd zincate process). . In this case, a water washing process is performed after each process.

According to the base material 10 for an electronic component conveying jig of the present embodiment as described above, the strength and the hardness are high, and the base material 10 exhibits an appropriate adhesion strength to the resin for suction constituting the resin suction portion 21. Therefore, it can be suitably used as a support base for forming an electronic component transport jig for transporting various electronic components, and in particular, transports fine electronic components such as micro LEDs, capacitors, and semiconductor elements. It can be suitably used for a jig for transporting electronic parts.

Hereinafter, the present invention will be described more specifically with reference to Examples, but the present invention is not limited to these Examples.
In addition, the evaluation method of each characteristic is as follows.

<XPS measurement>
Oxidized plating plates obtained in Examples and Comparative Examples (Plating plates not subjected to oxidation treatment in Comparative Example 1, alumite-treated plates in Comparative Examples 3 and 4, and description of each measurement and evaluation below) The surface of an oxidized plating film formed on the surface of (aluminum-treated surface in Comparative Examples 3 and 4, hereinafter the same in the description of each measurement and evaluation) was applied to an X-ray photoelectron spectrometer (ULVAC). The peaks of Ni2p3 / 2, Sn3d5 / 2, P2p, and O1s were measured using a model number (VersaProbe II, manufactured by Phi Corporation).
The presence ratio of the oxygen element in all the elements was measured after etching by 2 nm by argon sputtering, and was calculated from the ratio of the O1s peak area to the sum of the peak areas of Ni2p3 / 2, Sn3d5 / 2, P2p, and O1s (total). The measurement results of the proportion of the oxygen element in the element were measured for Examples 7 and 8, Comparative Example 2, and Examples 9, 10, 16 to 18.)
The ratio of the P oxide was calculated from the ratio of the peak area of the P oxide to the peak area of the P2p by separating the peak of P2p into a waveform corresponding to each chemical state.
As for the state ratio of NiO and the state ratio of Ni ₂ O ₃ , the peak of Ni ₂ p 3/2 is separated into waveforms corresponding to the respective chemical states, and the peak area corresponding to NiO occupying the peak area of Ni 2 p 3/2, or It was calculated from the ratio of the peak area corresponding to Ni ₂ O ₃ .
The state ratio of SnO and the state ratio of SnO ₂ can be obtained by separating the peak of Sn3d5 / 2 into a waveform corresponding to each chemical state, and the peak area corresponding to SnO occupying the peak area of Sn3d5 / 2 or SnO _2. Was calculated from the ratio of the peak area corresponding to.

<Three-point bending test>
The oxidized plating plates obtained in Examples and Comparative Examples were cut into a size of 50 mm × 50 mm, and two opposing sides of a sample having a size of 50 mm × 50 mm were connected to a pair of support members (support terminal diameter 2 mm, support width). 40 mm), and placed in a state of being lifted from the reference surface. In this state, the vicinity of the center of two opposite sides of the oxidation-treated plating film forming surface of the oxidation-treated plating plate is a radius of 5 mm and a width of 50 mm. A three-point bending test was performed by applying a load of 60 N under the condition of 2 mm / min. Using an optical interference fringe meter (product name “Flatness tester (FT-M100P)”, manufactured by Mizojiri Optical Industrial Co., Ltd.), the change in the interference fringes was measured for the oxidized plated plate before and after the three-point bending test. It was observed and evaluated according to the following criteria. If no change in interference fringes is observed before and after the three-point bending test, it can be determined that the bending strength is excellent. On the other hand, if a change in interference fringes is observed, it can be determined that the bending strength is poor.
〇: No change in interference fringes was observed before and after the three-point bending test.
×: Changes in interference fringes were observed before and after the three-point bending test.

<Scratch test>
A hard alloy needle was placed vertically on the oxidized plating film-formed surface of the oxidized plating plates obtained in Examples and Comparative Examples, and a scratch test was performed with a load of 50 g / kgf applied. The scratch depth was measured with a microscope (Olympus Corp., “LEX (OLS3500)”). It can be determined that the smaller the scratch depth, the higher the hardness.
〇: The scratch depth is 1 μm or less ×: The scratch depth exceeds 1 μm

<Adhesion of adsorption resin>
In the oxidized plating plate provided with the resin layer for adsorption obtained in Examples and Comparative Examples, Sickerol (manufactured by Asahi Group Foods Co., Ltd.) was applied to the resin layer for adsorption, and the resin layer for adsorption was 20 mm wide with a cutter. And peeled off at a length of 20 mm from the end. Gum tape (Nitto Denko CS System Co., Ltd., “Super Cloth Tape No. 757 Super”) is stuck on both sides of the peeled part, and 180 ° direction using Tensilon Universal Material Testing Machine RTC-1350A (Orientec Co., Ltd.) Next, the peel strength (peeling load) of the adsorption resin layer was measured at a speed of 50 mm / min. The higher the peel strength value, the higher the adhesion between the oxidized plating plate and the resin layer for adsorption. In addition, from the viewpoint of adhesion to the adsorption resin layer, the value of the peel strength is desirably 0.35 N / 20 mm or more, and as described above, unnecessary in the manufacturing process of the electronic component conveying jig. Since the adsorption resin may be peeled off, the peel strength is desirably 2 N / 20 mm or less from the viewpoint of the releasability when the unnecessary adsorption resin is peeled off.

<< Example 1 >>
An aluminum plate (Al # 5000) having a thickness of 0.68 mm was prepared. Then, the prepared aluminum plate is degreased, each pretreatment of etching, desmutting, 1st zincate, dezinkate, 2nd zincate is performed in this order, and water washing is performed between each step. Using a malic acid-succinic acid-based electroless Ni-P plating bath), a 10-μm-thick Ni-P alloy plating layer (P content: 12.0 to 12. 5% by weight). Next, the aluminum plate on which the Ni—P alloy plating layer is formed is oxidized by immersing it in a 30% by weight aqueous H ₂ O ₂ solution at an immersion temperature of 25 ° C. for an immersion time of 30 minutes. Then, an oxidation-treated plated plate having an oxidation-treated plating film having a thickness of 10 μm was formed via a zinc-containing base layer. Then, the obtained oxidized plated sheet was subjected to the XPS measurement according to the above-described method, and based on the results of the XPS measurement, the proportion of the oxygen element in all the elements, the proportion of the oxide of P, the proportion of the state of NiO, and the proportion of Ni ₂ O ₃ And a three-point bending test and a scratching test were performed. Table 1 shows the results.

Next, a layer made of a non-silicone resin (polyether resin) is formed as a resin for adsorption on the surface of the oxidized plating plate obtained above on which the oxidized plating layer is formed. The non-silicone resin was cured by heating for 10 minutes to form a non-silicone resin layer (adsorption resin layer) having a thickness of 100 μm on the oxidized plating plate. Then, the peel strength of the oxidized plating plate having the non-silicone resin layer was measured according to the above method. Table 1 shows the results.

<< Examples 2 to 7 >>
Except that the conditions of the oxidation treatment using the H ₂ O ₂ aqueous solution were changed to the conditions shown in Table 1, respectively, the oxidation treatment plating plate and the oxidation treatment plating plate including the non-silicone resin layer were performed in the same manner as in Example 1. Was manufactured and evaluated similarly. Table 1 shows the results.

<< Embodiment 8 >>
A steel sheet obtained by annealing a cold-rolled low-carbon aluminum-killed steel sheet (0.25 mm thick) was prepared. Then, the prepared steel sheet is degreased, washed with water, pickled, and washed with water. Then, using the following tin plating bath, under the following plating conditions, a steel sheet having a tin plating layer formed thereon is obtained, and sodium hydroxide ( NaOH) to a pH of 13 and immersed in a 6% by weight aqueous solution of sodium hypochlorite (NaClO) at an immersion temperature of 70 ° C. and an immersion time of 20 minutes to perform oxidation treatment. An oxidized plating plate having a 0.0 μm oxidized plating film formed thereon was obtained. Then, using the obtained oxidized plating plate, evaluation was performed in the same manner as in Example 1, and using the obtained oxidized plating plate, an oxidized plating plate having a non-silicone resin layer was manufactured. Was evaluated. Table 1 shows the results.
<Tin plating bath and tin plating conditions>
Stannous sulfate 80g / L
Phenolsulfonic acid 60g / L
Bath temperature 40 ° C
Current density 10A / dm ²

<< Comparative Example 1 >>
A plated plate and a plated plate having a non-silicone resin layer were manufactured and evaluated in the same manner as in Example 1, except that the oxidation treatment using the H ₂ O ₂ aqueous solution was not performed. Table 1 shows the results.

<< Comparative Example 2 >>
A base-treated plating plate and a non-silicone resin layer are provided in the same manner as in Example 1, except that a base treatment using an aqueous sodium hydroxide solution is performed instead of the oxidation treatment using an H ₂ O ₂ aqueous solution. A base-treated plating plate was manufactured and similarly evaluated. The base treatment using an aqueous solution of sodium hydroxide was performed at 95 ° C. for 30 minutes using an aqueous solution of sodium hydroxide having a pH of 12. Table 1 shows the results.

<< Comparative Example 3 >>
An aluminum plate (Al # 5000) having a thickness of 0.5 mm was prepared. Then, the prepared aluminum plate was degreased, washed with water, and then anodized to obtain an alumite-treated plate. Using the obtained alumite-treated plate, evaluation was performed in the same manner as in Example 1. Using the obtained alumite-treated plate, an alumite-treated plate provided with a non-silicone resin layer was manufactured. An evaluation was performed. Table 1 shows the results.

In addition, in Table 1, "the oxidation state ratio of the outermost surface of the plating film of each element" indicates the ratio of the oxide in each element (the same applies to Table 2). That is, for example, if “NiO” or “Ni ₂ O ₃ ”, the chemical state of all Ni on the outermost surface (Ni alone, Ni oxide, Ni compound other than Ni oxide) is 100%. Indicates the percentage of Ni in the state of “NiO” or Ni in the state of “Ni ₂ O ₃ ” (for example, in Example 1, the state other than the state of “NiO” and the state of “Ni ₂ O ₃ ”) This means that Ni in the state exists at a ratio of 80.20%.) Further, in the case of “oxide of P”, “oxide of P” when the chemical state of all P on the outermost surface (simple P, P oxide, P compound other than P oxide) is 100%. In the case of “SnO” or “SnO ₂ ”, the chemical state of all Sn (Sn alone, Sn oxide, Sn compound other than Sn oxide) on the outermost surface is 100%. In this case, the ratio of Sn in the “SnO” state or Sn in the “SnO ₂ ” state is shown.

As shown in Table 1, an oxidized plating film containing at least one element selected from Ni, Sn and P is provided, and the outermost surface of the oxidized plating film is in an oxidized state in all Ni elements. When the state ratio of Ni ₂ O ₃ as Ni or the state ratio of SnO ₂ as Sn in an oxidized state in all Sn elements on the outermost surface is 1% or more, strength by a three-point bending test, and The hardness was excellent in the scratching test, and the adhesion to the resin for adsorption (peel strength) was within an appropriate range, and good results were obtained (Examples 1 to 8).
On the other hand, even when an oxidized plating film containing at least one element selected from Ni, Sn and P is provided, Ni ₂ as an oxidized Ni in all Ni elements on the outermost surface of the oxidized plating film When the state ratio of O ₃ or the state ratio of SnO ₂ as Sn in the oxidized state in all Sn elements on the outermost surface is less than 1%, the adhesion to the adsorption resin is insufficient (comparative). Examples 1 and 2) In addition, when anodizing treatment is performed instead of the oxidized plating film containing at least one element selected from Ni, Sn and P, the strength by the three-point bending test and the scratches The result was that the hardness by the attachment test was low, and the adhesion (peel strength) to the resin for adsorption was too high (Comparative Example 3).

<< Example 9 >>
An aluminum plate (Al # 5000) having a thickness of 0.68 mm was prepared. Then, the prepared aluminum plate is degreased, and pretreatments of etching, desmutting, first zincate, dezincate, and second zincate are performed in this order, and water washing is performed between each step, and then a Ni—P plating bath (known in the art) Using a malic acid-succinic acid-based electroless Ni-P plating bath), a 10 μm-thick Ni—P alloy plating layer (P content: 12.0 to 12.5 % By weight). Next, the aluminum plate on which the Ni—P alloy plating layer is formed is oxidized by immersing it in a 15% by weight H ₂ O ₂ aqueous solution at an immersion temperature of 70 ° C. for an immersion time of 10 minutes. Then, an oxidation-treated plated plate having an oxidation-treated plating film having a thickness of 10 μm was obtained via an underlayer containing zinc. Then, for the obtained oxidized plating sheet, according to the above-described method, the results of XPS measurement show that the proportion of the oxygen element in all the elements, the proportion of the P oxide, the proportion of the NiO, and the proportion of Ni ₂ O _{3 were determined.} And a three-point bending test and a scratching test were performed. Table 2 shows the results.

Next, a layer made of dimethylsiloxane (DMS) is formed as a resin for adsorption on the surface of the oxidized plating plate obtained above on which the oxidized plating layer is formed, and the layer is formed at 85 ° C. for 10 minutes. By heating, the layer made of dimethylsiloxane (DMS) was cured to form a 100 μm-thick polydimethylsiloxane (PDMS) layer (adsorption resin layer) on the oxidized plating plate. Then, the peel strength of the oxidized plating plate having the PDMS layer was measured according to the above method. Table 2 shows the results.

<< Examples 10 to 17 >>
An oxidized plating plate and an oxidized plating plate having a PDMS layer were manufactured in the same manner as in Example 9 except that the conditions of the oxidation treatment using the H ₂ O ₂ aqueous solution were changed to the conditions shown in Table 2, respectively. The evaluation was performed in the same manner. Table 2 shows the results.

<< Example 18 >>
A steel sheet obtained by annealing a cold-rolled low-carbon aluminum-killed steel sheet (0.25 mm thick) was prepared. Then, the prepared steel sheet is degreased, washed with water, pickled, and washed with water. Then, using the following tin plating bath, under the following plating conditions, a steel sheet having a tin plating layer formed thereon is obtained. Oxidation treatment is performed by immersion in an aqueous solution of sodium hypochlorite (NaClO) at an immersion temperature of 70 ° C. and an immersion time of 20 minutes, and an oxidation-treated plating film having a thickness of 1.0 μm is formed on the steel sheet. The resulting oxidized plated plate was obtained. Then, using the obtained oxidized plating plate, evaluation was performed in the same manner as in Example 9, and, using the obtained oxidized plating plate, an oxidized plating plate having a PDMS layer was manufactured. went. Table 2 shows the results.
<Tin plating bath and tin plating conditions>
Stannous sulfate 80g / L
Phenolsulfonic acid 60g / L
Bath temperature 40 ° C
Current density 10A / dm ²

<< Comparative Example 4 >>
An aluminum plate (Al # 5000) having a thickness of 0.68 mm was prepared. Then, the prepared aluminum plate was degreased, washed with water, and then anodized to obtain an alumite-treated plate. Then, the obtained alumite-treated plate was evaluated in the same manner as in Example 10, and the obtained alumite-treated plate was used to produce an alumite-treated plate having a PDMS layer, and the evaluation was performed in the same manner. Was. Table 2 shows the results.

As shown in Table 2, an oxidized plating film containing at least one element selected from Ni, Sn and P is provided, and the outermost surface of the oxidized plating film is in an oxidized state in all Ni elements. When the state ratio of Ni ₂ O ₃ as Ni or the state ratio of SnO ₂ as Sn in an oxidized state in all Sn elements on the outermost surface is 1% or more, strength by a three-point bending test, and The hardness was excellent in the flaw test, and the adhesion (peel strength) to the resin for adsorption was within an appropriate range, and good results were obtained (Examples 9 to 18).
On the other hand, when the alumite treatment was performed instead of the oxidized plating film containing at least one element selected from Ni, Sn and P, the adhesion (peel strength) to the resin for adsorption was good. However, the strength was low in the three-point bending test and the hardness was low in the flaw test (Comparative Example 4).

DESCRIPTION OF SYMBOLS 10 ... Substrate for electronic component conveyance jig 11 ... Metal plate 12 ... Oxidized plating film 20 ... Resin layer 21 ... Resin adsorption part 30 ... Molding die 31 ... Cavity 40 ... Electronic component conveyance jig 50 ... Stocker Reference numeral 60: electronic component 70: circuit board

Claims

A base for an electronic component transport jig, comprising a resin suction portion for absorbing an electronic component, used for an electronic component transport jig,
The substrate for the electronic component transport jig is used to support the resin suction unit,
A metal plate, and an oxidized plating film formed on the metal plate and containing at least one element selected from Ni, Sn and P,
As the state ratio of Ni 2 O 3 as Ni in the oxidized state in all Ni elements on the outermost surface of the oxidized plating film, or as Sn in the oxidized state in all Sn elements on the outermost surface of the oxidized plating film The base material for a jig for transporting electronic components, wherein the state ratio of SnO 2 is 1% or more.
The base material for a jig for transporting electronic components according to claim 1, wherein the proportion of the oxygen element on the outermost surface of the oxidation-treated plating film is 40 atom% or more.
The oxidized plating film is an oxidized plating film containing at least Ni, and the state ratio between NiO and Ni 2 O 3 in Ni on the outermost surface of the oxidized plating film is “NiO: Ni 2 O 3”. 3. The base material for a jig for transporting electronic components according to claim 1, wherein the ratio is 11.0: 1.0 to 1.0: 99.0.
(4) The substrate according to any one of (1) to (3), wherein the oxidized plating film is an oxidized plating film containing at least a Ni—P alloy.
The base material for a jig for transporting electronic components according to any one of claims 1 to 4, wherein a state ratio of an oxide of P in an oxidized state in all P elements in the oxidized plating film is 21% or more. .
(6) The base material for a jig for transporting electronic parts according to any one of (1) to (5), wherein the thickness of the oxidized plating film is 1 to 40 μm.
(7) The base material for a jig for transporting electronic components according to any one of (1) to (6), wherein the metal plate is an aluminum plate.
Further comprising a zinc-containing base layer on the metal plate,
The base material for a jig for transporting electronic components according to any one of claims 1 to 7, wherein the oxidized plating film is formed on the base layer.
An electronic component conveying jig, comprising a resin sucking portion for adsorbing an electronic component on the electronic component conveying jig base according to any one of claims 1 to 8.