TWI704703B - 積體電路及其製造方法 - Google Patents

積體電路及其製造方法 Download PDF

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TWI704703B
TWI704703B TW108103124A TW108103124A TWI704703B TW I704703 B TWI704703 B TW I704703B TW 108103124 A TW108103124 A TW 108103124A TW 108103124 A TW108103124 A TW 108103124A TW I704703 B TWI704703 B TW I704703B
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tsv
die
conductive
material layer
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TW108103124A
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TW201937768A (zh
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Ｍｄ 賽德 卡薩爾 賓 拉希姆
盧克 英格蘭
蘇凱須沃爾 坎南
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美商格芯（美國）集成電路科技有限公司
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Abstract

揭露於此之產品包括RF濾波器晶粒，其包括RF濾波器、前側及導電耦合至該RF濾波器之至少一部份的複數導電接合墊，其中該導電接合墊的至少一部份在該RF濾波器晶粒的前側上暴露。該產品也包括一TSV(基板穿孔)晶粒，其包括位在該TSV晶粒之背側上的複數導電TSV接觸件與導電耦合至該複數導電TSV接觸件中之至少一者的至少一導電TSV(基板穿孔)結構，其中，該TSV晶粒的背側接合至該RF濾波器的前側，致使該RF濾波器晶粒上的該導電接合墊導電耦合至位在該TSV晶粒之背側上的對應導電TSV接觸件。

Description

積體電路及其製造方法
本揭示內容大體有關於積體電路的製造，且更特別的是，有關於製造射頻(radio frequency，RF)濾波器之各種方法與各種RF濾波器結構。
射頻(RF)濾波器使用於無線通訊系統。有以下兩種RF濾波器：表面聲波(Surface Acoustic Wave，SAW)濾波器與體聲波(Bulk Acoustic Wave，BAW)濾波器。SAW濾波器通常包含形成在壓電材料之表面上的一對指叉導電跡線(interdigitated electrical conductive trace，IDT)。BAW濾波器通常包含夾在兩個電極之間且與周圍介質在聲學上隔離的壓電材料。SAW濾波器通常利用相對較低的頻率，例如，2.5GHz以下，然而BAW濾波器通常利用相對較高的頻率，例如，2.5GHz以上。
SAW及BAW濾波器裝置通常製作於半導體晶粒上。半導體晶粒最終必須安置在有某一形式的封裝件中以便出售給最終使用者。此類封裝執行數個功能，包括但不限於：保護半導體晶粒免受機械及環境之害，且提供讓電可進出晶粒的構件。半導體晶粒傳統上用打線接合技術 術電氣連接至封裝件，其中引線係附接至晶粒的墊(pad)和位於塑膠或陶瓷封裝件之空腔中的墊。打線接合當今仍為最常用於半導體工業的互連策略。但是，要更小、更快、更便宜、更可靠以及有減少之熱分佈(thermal profile)的產品需求已將打線接合技術推到極限(且超過)，因而建立產品持續改善及成長的屏障。
最小化諸如行動電話、平板、數位相機之類的電子產品為不變的趨勢。結果，製造有更小、更密集包裝之半導體結構的半導體裝置為不變的趨勢。這導致需要半導體封裝件有相對輕重量的結構以及支援被最小化之電子產品的增加電子性能(例如，增加密度、移動率和延長使用壽命)。
本揭示內容針對製造射頻(RF)濾波器之各種方法與各種RF濾波器結構，這可排除或至少減少上述問題中之一或多個。
以下提出揭露具體實施例的簡化概要供基本理解揭露於此之專利標的的一些方面。此概要並非揭露於此之專利標的的窮舉式總覽。它不是旨在確認揭露於此之專利標的的關鍵或重要元件或者是描繪針對揭露於此之任一專利標的的任一請求項的範疇。唯一的目的是要以簡要的形式提出一些概念作為本申請案隨後將討論之更詳細說明的前言。
本揭示內容大體針對數種製造射頻(RF)濾 波器之方法與各種RF濾波器結構。揭露於此之一示範產品包括一RF濾波器晶粒，其包括一RF濾波器、一前側與導電耦合至該RF濾波器之至少一部份的複數導電接合墊，其中導電接合墊各自的至少一部份在該RF濾波器晶粒之該前側上暴露。該產品也包括一TSV(基板穿孔)晶粒，其包括位在該TSV晶粒之背側上的複數導電TSV接觸件以及導電耦合至該複數導電TSV接觸件中之至少一者的至少一導電TSV(基板穿孔)結構，其中該TSV晶粒的該背側接合至該RF濾波器晶粒的該前側，致使該RF濾波器晶粒上的該導電接合墊導電耦合至位在該TSV晶粒之該背側上的對應導電TSV接觸件。
也揭露於此的是一種RF濾波器晶粒，其包括一前側與一RF濾波器，該前側包括絕緣材料，其具有形成該RF濾波器晶粒之前側之一部份的實質平坦表面。在此實施例中，該產品也包括導電耦合至該RF濾波器之至少一部份的複數導電接合墊，其中該導電接合墊具有與該絕緣材料之實質平坦表面實質平坦的實質平坦表面，致使導電接合墊各自的至少一部份在該RF濾波器晶粒之該前側上暴露。
揭露於此的一種示範方法包括：形成一RF濾波器晶圓，其包括複數RF濾波器晶粒與包括具有一實質平坦表面之絕緣材料的一前側，該絕緣材料位於該複數RF濾波器晶粒中之各者上面，以及形成一TSV(基板穿孔)晶圓，其包括複數TSV(基板穿孔)晶粒與位在該TSV晶粒 之背側上的複數導電TSV接觸件，各個TSV晶粒包括導電耦合至該複數導電TSV接觸件中之至少一者的至少一導電TSV(基板穿孔)結構。該方法也包括：使該RF濾波器晶圓的前表面接合至該TSV晶圓的背側，致使該RF濾波器晶粒上的該導電接合墊導電耦合至位於該TSV晶圓之背側上的對應導電TSV接觸件。
10‧‧‧產品或積體電路(IC)產品
12‧‧‧RF濾波器晶圓(或基板)
12A、14A‧‧‧前側
12B、14B‧‧‧背側
12S‧‧‧表面
13、15‧‧‧基板
14‧‧‧TSV(基板穿孔)晶圓(或基板)
16‧‧‧RF濾波器
18‧‧‧壓電材料層
20‧‧‧指叉導電跡線(IDT)
22‧‧‧開放濾波器空腔或濾波器空腔
24‧‧‧導電TSV結構或TSV結構
25‧‧‧導電線路或導電材料共形層
26‧‧‧絕緣材料層或絕緣材料
27、32‧‧‧導電墊
27S‧‧‧表面或上表面
28‧‧‧絕緣材料層或絕緣材料
30‧‧‧導電構件
31、33、35、37‧‧‧材料層
34‧‧‧鈍化層
36‧‧‧導電凸塊下金屬化墊
38‧‧‧焊球
39‧‧‧聲鏡或聲鏡層
40‧‧‧凹部
41‧‧‧底部電極
42、43‧‧‧頂部電極
47‧‧‧導電穿孔或穿孔
49、62‧‧‧墊
50‧‧‧處理晶圓(或基板)
51‧‧‧絕緣材料層
51A、51B‧‧‧導電穿孔
52‧‧‧有機黏膠材料層或有機黏膠材料
53‧‧‧導電接合墊、接合墊或導電墊
53S‧‧‧上表面或表面
54X‧‧‧導電TSV接觸件
55‧‧‧絕緣材料或絕緣材料層
60‧‧‧CMP製程工具
64‧‧‧軸桿
80‧‧‧RF濾波器晶粒
82‧‧‧主動TSV(基板穿孔)晶粒
參考以下結合附圖的說明可明白本揭示內容，其中，類似的元件以相同的元件符號表示，且其中：第1圖至第24圖描繪製造射頻(RF)濾波器之各種方法與各種RF濾波器結構。
儘管揭露於本文之專利標的容易做成各種修改及替代形式，然而本文仍以附圖為例圖示本發明的幾個特定具體實施例且詳述於本文。不過，應瞭解本文所描述的特定具體實施例並非旨在把本發明限定為本文所揭示的特定形式，反而是，本發明應涵蓋落在如隨附的申請專利範圍所界定之本發明精神及範疇內的所有修改、等效及替代性陳述。
以下描述本發明的各種示範具體實施例。為了清楚說明，本專利說明書並未描述實際具體實作的所有特徵。當然，應瞭解，在開發任一此類的實際具體實施例時，必需做許多與具體實作有關的決策以達成開發人員的特定目標，例如遵循與系統相關及商務有關的限制，這 些都會隨著每一個具體實作而有所不同。此外，應瞭解，此類開發既複雜又花時間，決不是本技藝一般技術人員在閱讀本揭示內容後即可承擔的例行工作。
此時以參照附圖來描述本發明。示意圖示於附圖的各種結構、系統及裝置係僅供解釋以及避免本領域技術人員所習知的細節混淆本發明。儘管如此，仍納入附圖以描述及解釋本揭示內容的示範實施例。應使用與相關技藝技術人員所熟悉之意思一致的方式理解及解釋用於本文的字彙及片語。本文沒有特別定義的術語或片語(亦即，與本領域技術人員所理解之普通慣用意思不同的定義)旨在用術語或片語的一致用法來說明。如果術語或片語旨在具有特定的意思時(亦即，不同於本領域技術人員所理解的意思)，則會在本專利說明書中以直接明白地提供特定定義的方式清楚地陳述用於該術語或片語的特定定義。
本揭示內容針對製造射頻(RF)濾波器之各種方法與各種RF濾波器結構。本領域技術人員在讀完本申請案後會明白，在形成SAW及/或BAW濾波器裝置時可運用本案所揭露的方法。不過，本案所揭露的發明不應被視為受限於任何特定類型或形式的RF濾波器裝置。此時參考附圖更詳細地描述揭露於此之方法及裝置的各種示範具體實施例。
第1圖描繪積體電路(IC)產品10的一示範具體實施例，其包括使用揭露於此之方法接合至主動TSV(基板穿孔)晶粒82的示範RF濾波器晶粒80。RF濾波器 晶粒80包含RF濾波器16。在圖示於第1圖的實施例中，示範RF濾波器16為SAW濾波器。不過，本領域技術人員在讀完本申請案後會明白，BAW濾波器可取代第1圖的示範SAW濾波器。
一般而言，會在RF濾波器晶圓(或基板)12上製造複數RF濾波器晶粒80(各自包含RF濾波器16)。同樣，會在獨立主動TSV(基板穿孔)晶圓(或基板)14上製造複數TSV晶粒82。RF濾波器晶圓12具有前側12A與背側12B。同樣，主動TSV晶圓14具有前側14A與背側14B。主動TSV晶圓14的加工會與RF濾波器晶圓12的加工分開地完成。如以下所詳述的，在RF濾波器晶圓12與主動TSV晶圓14兩者的製造完成後，使用習知晶圓對晶圓混合接合製程，將RF濾波器晶圓12的前側12A接合至主動TSV晶圓14的背側14B。這時，使用傳統的切割設備切割(或單切)RF濾波器晶圓12與主動TSV晶圓14的接合組合以切穿RF濾波器晶圓12與主動TSV晶圓14兩者以產生由RF濾波器晶粒80與主動TSV晶粒82構成的第1圖所示複數示範IC產品10。然後，使附加封裝材料(未圖示)位於各個IC產品10四周且售出。應注意，以下在說明IC產品10時提及的主張是在垂直位於主動TSV晶粒82上面的RF濾波器晶粒80的背景下擬定。
IC產品10之RF濾波器晶粒80部份的一示範具體實施例包含基板13與示範RF濾波器16。如上述，在第1圖的實施例中，RF濾波器16為SAW濾波器。因此， RF濾波器16包含壓電材料層18與導電耦合至在導電墊27結尾之複數導電線路25的複數簡示指叉導電跡線(IDT)20。第1圖中也描繪一或多個絕緣材料層26，例如二氧化矽、氮化矽等等。如詳述下文中的，RF濾波器晶圓12經製造成，在RF濾波器晶圓12的製造完成後，有複數RF濾波器晶粒80(各自包含RF濾波器16)形成於RF濾波器晶圓12上。RF濾波器晶粒80各自包含RF濾波器16、用其他導電結構(例如，導電線路)導電耦合至RF濾波器16的複數導電墊27、以及位在RF濾波器16之至少一部份上面的開放濾波器空腔22。各在RF濾波器晶粒80中的濾波器空腔22保持開放直到RF濾波器晶圓12接合至TSV晶圓14的時候。導電墊27的表面與RF濾波器晶圓12的前側12A實質共平面，從而暴露導電墊27的表面，致使彼等導電耦合至形成在TSV晶圓14之背側14B上的導電材料層(如下述)。
IC產品10之主動TSV晶粒82部份的一示範具體實施例包含基板15與一或多個絕緣材料層28，例如二氧化矽、氮化矽等等。複數導電構件30形成於基板15上面。導電構件30本質上為示範且彼等可耦合至形成於TSV晶圓14之前側14A上的一或多個主動及/或被動裝置(未圖示)，例如電晶體、電阻器、電容器等等。TSV(基板穿孔)形成於TSV晶圓14中係藉由執行更完整地描述於下文的方法。在圖示實施例中，示範主動TSV晶粒82各自包含複數導電墊32(例如，鋁墊)、鈍化層34(例如，聚 醯胺層)、導電凸塊下金屬化墊36(例如，銅)及複數焊球38(例如，鍚(Sn)、金(Au)等等)。示範主動TSV晶粒82各自也包含延伸穿過TSV基板14之背側14B的複數導電TSV結構24。TSV晶粒82也包括位於TSV晶圓14之背側14B上的複數導電TSV接觸件54X。在一具體實施例中，導電TSV接觸件54X各自設計成可接觸對應個別導電TSV結構24。第1圖中也圖示形成於導電TSV接觸件54X之間的絕緣材料55(例如，二氧化矽)。在RF濾波器晶圓12與TSV晶圓14互相接合後，RF濾波器晶圓12上的導電墊27導電耦合至TSV晶圓14上的導電TSV接觸件54X及TSV結構24。
基板13、15可由各種不同材料構成，例如半導體材料、玻璃等等，且基板13、15不需要由相同的材料構成，然而在有些應用可能是這樣。基板13、15可具有各種組態，例如圖示於此的塊狀基板組態。因此，用語“基板”或“半導體基板”應被理解為涵蓋各種不同材料中之任一或所有，包括但不限於：半導體材料、絕緣材料等等。揭露於此之裝置的各種組件及結構可使用各種不同材料且藉由執行各種習知技術形成，例如化學氣相沉積(chemical vapor deposition，CVD)製程、原子層沉積(atomic layer deposition，ALD)製程、熱成長製程、旋塗技術、磊晶成長製程等等。各種材料層的厚度也可隨著特定應用而有所不同。
第2圖至第3圖圖示用於形成第1圖所示 TSV基板14之一示範具體實施例的一示範技術。藉由執行傳統製造技術可形成第2圖所示之所有結構。第2圖圖示在初始使用傳統製造技術形成TSV結構24於基板15中之後的TSV基板14。在加工流程的這點處，複數凹部40形成於基板15中，與凹部40對齊的開口(未圖示)形成於絕緣材料28中，以及絕緣材料的共形襯裡層(未個別圖示)形成於凹部40中。之後，導電TSV結構24的導電材料形成於此時帶有襯裡的凹部40中。如圖示，在加工流程的這點處，凹部40的深度致使凹部不會一直延伸到TSV基板14的背側14B。第2圖中也圖示有機黏膠材料層52與所謂的處理(handle)晶圓(或基板)50，其附接至TSV晶圓14的前側14A以促進TSV基板14的進一步加工。晶圓50可由上述用於基板13、15的材料中之一或多個構成。有機黏膠材料層52與基板50的厚度可取決於特定應用而有所不同。TSV結構24可由各種不同材料構成，例如銅、鎢等等。
第3圖圖示在執行數個製程操作之後的TSV基板14。首先，執行一或多個CMP(Chemical Mechanical Polishing，化學機械研磨)製程及/或回蝕製程操作以移除部份的基板15以便暴露TSV結構24。之後，遍及TSV基板14的整個背側14B地形成有複數導電TSV接觸件54X形成於其中的絕緣材料層55，例如，二氧化矽。如圖示，導電TSV接觸件54X都導電耦合至對應TSV結構24。在一示範加工流程中，毯覆沉積遍及整個背側14B 的絕緣材料55，且隨後圖案化以界定用於導電TSV接觸件54X的開口。這時，沉積用於導電TSV接觸件54X的導電材料以便過填絕緣材料層中的開口。之後，執行CMP製程以移除導電材料的多餘數量，從而在位於絕緣材料層55中的開口中留下導電TSV接觸件54X。在另一示範加工流程中，可毯覆沉積遍及整個背側14B的一導電材料層，且隨後圖案化以界定導電TSV接觸件54X。這時，可形成絕緣材料55於導電TSV接觸件54X之間，且可執行CMP製程以移除絕緣材料55在導電TSV接觸件54X上面的多餘部份。導電TSV接觸件54X之圖案化層及其組合物的厚度可取決於特定應用而有所不同。例如，導電TSV接觸件54X可具有約2.5至4.5微米(μm)的厚度，且可由各種不同導電材料構成，例如銅。在加工流程的這點處，實質完成TSV晶圓14(由複數主動TSV晶粒82構成)的製造且備妥使用詳述於下文的方法接合至RF濾波器晶圓12。
第4圖至第12圖圖示用於形成RF濾波器晶圓12的一示範加工流程，其中RF濾波器16為簡示SAW濾波器。將只描繪單一RF濾波器晶粒80的形成。第4圖圖示在執行數個製程操作之後的RF濾波器晶圓12。首先，毯覆沉積遍及RF濾波器晶圓12之整個前側12A的絕緣材料層26。之後，在絕緣材料層26上毯覆沉積壓電材料層18。層26及18的組合物及厚度可取決於特定應用而有所不同。在一示範具體實施例中，可形成厚度約500-600微米的絕緣材料層26，而且它可由諸如二氧化矽、氮化矽 之類的絕緣材料構成。在一示範具體實施例中，可形成厚度約200-300微米的壓電材料層18，而且它可由適用於RF濾波器16的各種不同壓電材料構成，例如，氧化鋅(ZnO)、硫化鋅(ZnS)、氮化鋁(AlN)、鉭酸鋰(LiTaO3)、鋯鈦酸鉛鑭(lead lanthanum-zirconate-titanate)族、石英、正磷酸鎵(gallium orthophosphate、GaPO4)、矽酸鎵鑭(langasite)/鉭酸鎵鑭(langatate)/銀酸鎵鑭(langanite)晶體等等的其他構件。
第5圖圖示在通過例如圖案化光阻材料層的圖案化蝕刻遮罩(未圖示)執行蝕刻製程以圖案化壓電材料層18之後的RF濾波器晶圓12。圖案化壓電材料層18的大小可取決於特定應用而有所不同。在一示範具體實施例中，在從上面觀看時，圖案化壓電材料層18可具有大體矩形或大體方形組態。在蝕刻製程完成後，移除該圖案化蝕刻遮罩。當然，會形成遍及RF濾波器晶圓12的數個圖案化壓電材料層18(亦即，每個RF濾波器晶粒80配一個)。
第6圖圖示在執行數個製程操作之後的RF濾波器晶圓12。首先，沉積例如二氧化矽的附加絕緣材料26於RF濾波器晶圓12上，致使附加絕緣材料26形成於圖案化壓電材料層18的上表面上面。之後，執行化學機械研磨(CMP)製程以平坦化附加絕緣材料26的上表面。應注意，此附加絕緣材料的形式實際上可為另一獨立材料層。不過，此一獨立絕緣材料層26未圖示於附圖。另外，製程在此時形成之附加絕緣材料(以及在下述加工流程的其他 點)的材料可能與先前形成於產品10上的底下絕緣材料相同或不同。無意圖示作為獨立材料層的絕緣材料。
第7圖圖示在通過例如圖案化光阻材料層的圖案化蝕刻遮罩(未圖示)執行蝕刻製程以移除絕緣材料26位於壓電材料層18上面的部份之後的RF濾波器晶圓12。此製程操作導致在此時被暴露的壓電材料層18上面形成開放濾波器空腔22。在蝕刻製程完成後，移除該圖案化蝕刻遮罩。
第8圖圖示在執行數個製程操作之後的RF濾波器晶圓12。首先，形成遍及RF濾波器晶圓12之整個前側12A的導電材料共形層25。如圖示，導電材料共形層25位在絕緣材料26的上表面上面以及在開放濾波器空腔22的側壁及底面上。之後，通過例如圖案化光阻材料層的圖案化蝕刻遮罩(未圖示)蝕刻製程以圖案化導電材料共形層25。這時，移除該圖案化蝕刻遮罩且形成另一圖案化接觸遮罩層(未圖示)於此時已被圖案化的導電材料共形層25上面。此圖案化蝕刻遮罩具有位置對應至會導電耦合至導電材料共形層25之複數導電墊27的開口。之後，可形成一或多個製程操作以形成導電墊27。例如，可沉積附加導電材料於RF濾波器晶圓12上以便過填圖案化接觸遮罩層的開口。這時，可執行CMP製程以移除導電材料位於圖案化接觸遮罩層之上表面上面的多餘數量以便有效形成導電墊27。這時，可移除該圖案化接觸遮罩層。導電墊27可由各種不同材料構成，例如銅、鎢，且導電墊27的構成材 料可與使用於導電材料共形層25的相同或不同。
第9圖圖示在沉積例如二氧化矽之附加絕緣材料26於RF濾波器晶圓12上之後的RF濾波器晶圓12。此附加絕緣材料覆蓋導電材料共形層25和導電墊27的表面27S。
第10圖圖示在執行另一化學機械研磨(CMP)及/或回蝕製程以移除絕緣材料26在導電墊27上面的部份之後的RF濾波器晶圓12。在此製程操作結束時，導電墊27的上表面27S暴露，且表面27S與RF濾波器晶圓12的前側12A實質共面。
第11圖圖示在執行數個製程操作之後的RF濾波器晶圓12。首先，在第10圖的結構上面形成例如圖案化光阻材料層的圖案化蝕刻遮罩(未圖示)。之後，通過此圖案化蝕刻遮罩執行一蝕刻製程以移除絕緣材料26位在濾波器空腔22內以及導電材料共形層25在濾波器空腔22底部之實質所有部份上面的部份。
第12圖圖示在執行數個製程操作之後的RF濾波器晶圓12。首先，形成例如圖案化光阻材料層的圖案化蝕刻遮罩(未圖示)於第11圖的結構上面。之後，通過此圖案化蝕刻遮罩執行一蝕刻製程以移除導電材料共形層25位在濾波器空腔22底部中的暴露部份。此製程操作導致形成複數簡示IDT 20於在壓電材料層18上之濾波器空腔22的底部。IDT 20的大小、個數及組態可取決於特定應用而有所不同。在蝕刻製程完成後，移除該圖案化蝕 刻遮罩。在加工流程的這點處，實質完成RF濾波器晶圓12的製造且備妥接合至TSV晶圓14，如以下所詳述的。
第13圖至第19圖圖示用於形成RF濾波器晶圓12的一示範加工流程，其中各RF濾波器晶粒80的RF濾波器16為簡示BAW濾波器。只描繪單一RF濾波器晶粒80的形成。第13圖圖示在執行數個製程操作以形成將一起構成BAW濾波器之聲鏡(acoustic mirror)39的複數材料層於基板13上面之後的RF濾波器晶圓12。形成用於聲鏡39之材料層的個數及組合物可取決於特定應用而有所不同。在圖示實施例中，聲鏡39包含依序沉積於基板13上面的四層材料31、33、35及37。該等層的厚度及構造材料可取決於特定應用而有所不同。例如，第一層31及第三層35可包含二氧化矽，而第二層33及第四層37可包含氮化矽。在圖示實施例中，所有層31、33、35及37可有大約相同的厚度，但是所有應用可能不存在這種情形。
第14圖圖示在執行數個製程操作以形成RF濾波器16的底部電極41之後的產品10。達成此事係藉由毯覆沉積遍及RF濾波器晶圓12之整個前側12A且於聲鏡層39上面的一導電材料層。底部電極41的組合物及厚度可取決於特定應用而有所不同。在一示範具體實施例中，底部電極41可具有約50-200奈米(nm)的厚度，且可由導電材料構成，例如銅、鋁等等。之後，通過例如圖案化光阻材料層的圖案化蝕刻遮罩(未圖示)執行蝕刻製程以 圖案化該導電材料層且從而形成底部電極41。底部電極41的大小可取決於特定應用而有所不同。在一示範具體實施例中，在從上面觀看時，底部電極41可具有大體矩形或大體方形組態。在蝕刻製程完成後，移除該圖案化蝕刻遮罩。當然，會形成遍及RF濾波器晶圓12的數個圖案化底部電極41(亦即，每個RF濾波器晶粒80配一個)。
第15圖圖示在形成上述之一壓電材料層18於底部電極41及聲鏡39上面之後的RF濾波器晶圓12。壓電材料層18的厚度可取決於特定應用而有所不同。應注意，壓電材料層18的厚度使得壓電材料層18覆蓋底部電極41。
第16圖圖示在執行數個製程操作以在壓電材料層18中形成簡示導電穿孔47以便建立通到底部電極41的電接觸路徑之後的RF濾波器晶圓12。藉由執行傳統製造技術可形成導電穿孔47，例如，蝕刻以形成穿孔開口，用導電材料填充穿孔開口，以及執行CMP製程以移除導電材料的多餘數量。如圖示，導電穿孔47與底部電極41導電接觸。
第17圖圖示在執行數個製程操作以主要形成RF濾波器16的頂部電極43與導電耦合至穿孔47的墊49之後的RF濾波器晶圓12。首先，在壓電材料層18上面，毯覆沉積用於頂部電極43及墊49兩者的導電材料遍及RF濾波器晶圓12的整個前側12A。頂部電極43和墊49的組合物及厚度可取決於特定應用而有所不同，且可由 與底部電極41相同的材料或不同的材料製成。在一示範具體實施例中，頂部電極43與墊49可具有約50-200奈米的厚度，且可由諸如銅、鋁之類的導電材料構成。之後，通過例如圖案化光阻材料層的圖案化蝕刻遮罩(未圖示)蝕刻製程以圖案化該導電材料層且從而形成頂部電極43及墊49。頂部電極43的大小可取決於特定應用而有所不同。在一示範具體實施例中，在從上面觀看時，頂部電極43可具有大體矩形或大體方形組態而且它的佔用面積(在從上面觀看時)可小於底部電極41的佔用面積(footprint)。在蝕刻製程完成後，移除該圖案化蝕刻遮罩。
第18圖圖示在沉積遍及基板且於頂部電極42上面的絕緣材料層51之後的RF濾波器晶圓12。絕緣材料層51的厚度及組合物可取決於特定應用而有所不同。在一示範具體實施例中，絕緣材料層51可由二氧化矽構成。在初始形成時，絕緣材料層51可具有非平坦的沉積後(as-deposited)上表面。因此，在一示範具體實施例中，執行化學機械研磨(CMP)製程以平坦化絕緣材料層51的上表面。
第19圖圖示在執行數個製程操作以形成導電穿孔51A、51B(合稱元件符號51)及複數導電接合墊53之後的RF濾波器晶圓12。在一示範加工流程中，可採用雙鑲嵌法，從而藉由通過一或多個圖案化蝕刻遮罩(未圖示)執行一或多個蝕刻製程在絕緣材料層51中可形成用於穿孔51及接合墊53兩者的開口。之後，用於穿孔51及接 合墊53的開口可填滿導電材料。這時，可執行CMP製程以移除導電材料的多餘數量。如圖示，導電穿孔51A導電耦合至頂部電極43，而導電穿孔51B通過墊49及穿孔47導電耦合至底部電極41。在此製程操作結束時，導電墊53的上表面53S暴露，且表面53S與RF濾波器晶圓12之前側12A的表面12S實質共面。導電墊53及穿孔51可由各種不同材料構成，例如銅、鎢等等。在加工流程的這點處，實質完成RF濾波器晶圓12(有示範BAW濾波器)的製造且備妥接合至TSV晶圓14，如以下所詳述的。
第20圖至第24圖圖示用於使RF濾波器晶圓12附接至TSV晶圓14的一示範技術。在圖示於第20圖至第24圖的實施例中，RF濾波器晶圓12上的RF濾波器16為示範SAW濾波器16。不過，本領域技術人員應瞭解，下述技術同樣可應用於RF濾波器晶圓12上之RF濾波器16為示範BAW濾波器16的情形。
第20圖為第3圖的尺寸縮減版，其圖示製造完成後的TSV晶圓14。第21圖的平面圖圖示TSV晶圓14的背側14B與絕緣材料層55，第21圖無意圖示遍及TSV晶圓14之整個背側14B地形成的導電TSV接觸件54X。
第22圖為第12圖的尺寸縮減版，其圖示製造完成後的RF濾波器晶圓12(由複數SAW濾波器構成)。第23圖的平面圖圖示RF濾波器晶圓12的前側12A。如第23圖所示，複數個別的RF濾波器晶粒80形成於RF濾波器晶圓12的前側12A上面。RF濾波器晶粒80各自 包括具有簡示SAW RF濾波器16之至少一部份位於其中的開放濾波器空腔22。第22圖及第23圖中也描繪絕緣材料26。第23圖無意圖示導電墊27。應注意，RF濾波器晶圓12上各個RF濾波器晶粒80的開放濾波器空腔22在加工流程的這點處仍然開放。
參考第20圖至第23圖，RF濾波器晶圓12與TSV晶圓14使用習知晶圓對晶圓混合接合技術互相接合。如附圖所示，使用由墊62與軸桿(shaft)64構成的示意圖示CMP製程工具60，使RF濾波器晶圓12的前側12A與TSV晶圓14的背側14B兩者經受軟墊CMP製程。CMP製程操作在RF濾波器晶圓12之前側12A及TSV晶圓14之背側14B上進行的持續時間及參數可取決於特定應用而有所不同。
參考第24圖，在RF濾波器晶圓12與TSV晶圓14經受上述軟研磨製程後，迫使TSV晶圓14的背側14B與RF濾波器晶圓12的前側12A接觸(如第24圖的雙箭頭所示)。在此製程期間，RF濾波器晶圓12上的導電接合墊(例如，27或53)導電耦合至位於TSV晶圓14之背側上的對應導電TSV接觸件54X。之後，TSV晶圓14與RF濾波器晶圓12的組合經受在室溫進行的表面活化氮電漿製程(surface activating nitrogen plasma process)以及相對低溫的退火製程(例如，350℃持續約1小時)，以便造成TSV晶圓14與RF濾波器晶圓12互相接合。之後，從TSV晶圓14移除有機黏膠材料52與處理晶圓(或基板)50。應 注意，使RF濾波器晶圓12與TSV晶圓14互相附著可有效密封在RF濾波器晶圓12上之各個RF濾波器晶粒80的開放濾波器空腔22，從而提供在RF濾波器16上面的密封環境。在RF濾波器16為BAW濾波器的情形下，不存在濾波器空腔22。在晶圓接合製程完成後，可將RF濾波器晶圓12與TSV晶圓14的接合組合切成(亦即，切割或單切)圖示於第1圖的個別產品10(由RF濾波器晶粒80與主動TSV晶粒82構成)。按需要，可形成產品10的附加封裝材料。
應注意，使用揭露於此之方法，在一示範實施例中，RF濾波器晶粒80係堆疊或安置在主動TSV晶粒82的背面上。此配置減少RF訊號的行進路徑，從而最小化傳輸損失。RF濾波器晶粒80與主動TSV晶粒82的此一堆疊配置也減少總體產品的封裝佔用面積。
以上所揭露的特定具體實施例均僅供圖解說明，因為本領域技術人員在受益於本文的教導後顯然可以不同但等效的方式來修改及實施本發明。例如，可用不同的順序完成以上所提出的製程步驟。此外，除非在隨附的申請專利範圍中有提及，不希望本發明受限於本文所示之構造或設計的細節。因此，顯然可改變或修改以上所揭露的特定具體實施例而所有此類變體都被認為仍然是在本發明的範疇與精神內。應注意，在本專利說明書及隨附的申請專利範圍中為了描述各種製程或結構而使用的例如“第一”、“第二”、“第三”或“第四”用語只是用來作為該等 步驟/結構的簡寫參考且不一定暗示該等步驟/結構的執行/形成按照該有序序列。當然，取決於確切的申請專利範圍語言，可能需要或不需要該等製程的有序序列。因此，本文提出隨附的申請專利範圍尋求保護。
10‧‧‧產品或積體電路(IC)產品
12A、14A‧‧‧前側
12B、14B‧‧‧背側
13、15‧‧‧基板
16‧‧‧RF濾波器
18‧‧‧壓電材料層
20‧‧‧指叉導電跡線(IDT)
22‧‧‧開放濾波器空腔或濾波器空腔
24‧‧‧導電TSV結構或TSV結構
25‧‧‧導電線路或導電材料共形層
26‧‧‧絕緣材料層或絕緣材料
27、32‧‧‧導電墊
28‧‧‧絕緣材料層或絕緣材料
30‧‧‧導電構件
34‧‧‧鈍化層
36‧‧‧導電凸塊下金屬化墊
38‧‧‧焊球
54X‧‧‧導電TSV接觸件
55‧‧‧絕緣材料或絕緣材料層
80‧‧‧RF濾波器晶粒
82‧‧‧主動TSV(基板穿孔)晶粒

Claims (14)

  1. 一種積體電路產品，包含：一RF濾波器晶粒，包含：一RF濾波器；一前側；複數導電接合墊，係導電耦合至該RF濾波器之至少一部份，其中，該複數導電接合墊中之各者的至少一部份在該RF濾波器晶粒的該前側上暴露；以及一第一絕緣材料層，係具有一實質平坦表面，其中，該第一絕緣材料層的該實質平坦表面形成該RF濾波器晶粒之該前側的至少一部份，且其中，該導電接合墊具有與在該RF濾波器晶圓之該前側上的該第一絕緣材料層之該實質平坦表面實質平坦的一表面；以及一TSV(基板穿孔)晶粒，包含：一前側與一背側，該TSV晶粒的該背側與該前側相反；複數導電TSV接觸件，係位在該TSV晶粒之該背側上；至少一導電TSV(基板穿孔)結構，係導電耦合至該複數導電TSV接觸件中之至少一者，其中，該TSV晶粒的該背側接合至該RF濾波器晶粒的該前側，且在該RF濾波器晶粒上的該導電接合墊 導電耦合至位在該TSV晶粒之該背側上的對應導電TSV接觸件；以及一第二絕緣材料層，係具有一實質平坦表面，其中，該第二絕緣材料層的該實質平坦表面形成該TSV晶粒之該背側的至少一部份，且其中，該複數導電TSV接觸件具有與在該TSV晶粒之該背側上的該第二絕緣材料層之該實質平坦表面實質平坦的一實質平坦表面。
  2. 如申請專利範圍第1項所述之積體電路產品，其中，該RF濾波器晶粒的該前側包含具有無任何濾波器空腔形成於其中之一實質平坦表面的一絕緣材料層。
  3. 如申請專利範圍第2項所述之積體電路產品，其中，該RF濾波器包含一體聲波(BAW)濾波器，包含：一第一電極；一壓電材料層，係位在該第一電極上；以及一第二電極，係位在該壓電材料層上，其中，該絕緣材料層位於該第二電極上面且覆蓋該第二電極。
  4. 如申請專利範圍第1項所述之積體電路產品，其中，該RF濾波器晶粒的該前側進一步包含有一濾波器空腔形成於其中的一第一絕緣材料層，並且該TSV晶粒的該背側包含一第二絕緣材料層，其中，該濾波器空腔暴露該RF濾波器的至少一部份，且其中，該TSV晶粒之該背側的該第二絕緣材料層接合至該RF濾波器晶粒的該前側之該第一絕緣材料層，從而密封該濾波器空腔。
  5. 如申請專利範圍第4項所述之積體電路產品，其中，該RF濾波器包含一表面聲波(SAW)濾波器，包含：一壓電材料層；以及複數指叉導電跡線(IDT)，係位在該壓電材料層上，其中，該複數指叉導電跡線中之至少一些的至少一部份與該壓電材料層的至少一部份在該濾波器空腔內暴露。
  6. 如申請專利範圍第1項所述之積體電路產品，其中，該導電接合墊包含與該RF濾波器晶粒之該前側實質平坦的一表面。
  7. 如申請專利範圍第1項所述之積體電路產品，其中，該RF濾波器晶粒進一步包含使該複數導電接合墊導電耦合至該RF濾波器的複數導電穿孔。
  8. 如申請專利範圍第1項所述之積體電路產品，進一步包含使該複數導電接合墊導電耦合至該RF濾波器的複數導電線路。
  9. 一種表面聲波(SAW)濾波器晶粒，包含：一前側，包含具有一實質平坦表面的一絕緣材料層，其中，該絕緣材料層的該實質平坦表面形成該表面聲波(SAW)濾波器晶粒之該前側的至少一部份；一表面聲波(SAW)濾波器，包含：一壓電材料層；以及複數指叉導電跡線(IDT)，係位在該壓電材料層上； 一濾波器空腔，對該表面聲波(SAW)濾波器晶粒之該前側開放，該濾波器空腔暴露該表面聲波(SAW)濾波器的至少一部份，其中，該複數指叉導電跡線(IDT)中之至少一些的至少一部份與該壓電材料層的至少一部份在該濾波器空腔內暴露；以及複數導電接合墊，係導電耦合至該表面聲波(SAW)濾波器之至少一部份，其中，該導電接合墊具有與該絕緣材料之該實質平坦表面實質平坦的一實質平坦表面，致使該複數導電接合墊中之各者的至少一部份在該表面聲波(SAW)濾波器晶粒的該前側上暴露。
  10. 一種製造積體電路之方法，該方法包含：形成包含複數RF濾波器晶粒與一前側的一RF濾波器晶圓，該RF濾波器晶粒各自包含一RF濾波器與導電耦合至該RF濾波器的複數導電接合墊；形成一TSV(基板穿孔)晶圓，包含複數TSV(基板穿孔)晶粒與位在該TSV晶圓之一背側上的複數導電TSV接觸件，該複數TSV晶粒各自包含導電耦合至該複數導電TSV接觸件中之至少一者的至少一導電TSV(基板穿孔)結構；以及使該RF濾波器晶圓的該前側接合至該TSV晶圓的該背側，致使在該RF濾波器晶粒上的該導電接合墊導電耦合至位在該TSV晶粒之該背側上的對應導電TSV接觸件。
  11. 如申請專利範圍第10項所述之方法，其中，該RF濾 波器晶粒各自包含對該RF濾波器晶圓之該前側開放的一濾波器空腔，該濾波器空腔暴露該RF濾波器的至少一部份，其中，使該RF濾波器晶圓之該前側接合至該TSV晶圓的該背側密封各在該複數RF濾波器晶粒中的該濾波器空腔。
  12. 如申請專利範圍第10項所述之方法，進一步包含將該RF濾波器晶圓與該TSV晶圓的接合組合切成複數個別的片段，該片段中之各者包含一RF濾波器晶粒與一TSV晶粒。
  13. 如申請專利範圍第10項所述之方法，其中，該TSV晶粒中之各者包含形成於該TSV晶粒之一前側上的複數電晶體裝置。
  14. 如申請專利範圍第10項所述之方法，其中，該RF濾波器包含一體聲波(BAW)濾波器與一表面聲波(SAW)濾波器中之一者。
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