TWI704240B - Copper alloy material for resistance material, manufacturing method thereof, and resistor - Google Patents

Abstract

The invention provides a copper alloy material for resistance material and a manufacturing method thereof. The copper alloy material for resistance material has both low resistance temperature coefficient and good stamping formability. Among them, a copper alloy material for resistance materials contains 10% by mass or more and 14% by mass or less of manganese, 1% by mass or more and 3% by mass or less of nickel, and the remainder is composed of copper and unavoidable impurities, and, The crystal grain size is 8 microns or more and 60 microns or less. Another copper alloy material for resistance materials, which contains 6 mass% or more and 8 mass% or less of manganese, 2 mass% or more and 4 mass% or less of tin, the remainder is composed of copper and unavoidable impurities, and crystals The particle size is 8 microns or more and 60 microns or less.

Description

Copper alloy material for resistance material, manufacturing method thereof, and resistor

The present invention relates to a copper alloy material for resistance material, a manufacturing method thereof, and a resistor.

Regarding the metal material used for the resistance material of the resistor, the temperature coefficient of resistance (hereinafter, also referred to as "TCR") is required to be low, so that the resistance of the resistor remains stable when the ambient temperature changes. The so-called temperature coefficient of resistance represents the change in resistance value due to temperature in parts per million per 1℃, and is expressed in terms of TCR (×10 ^-6 /K)=(RR ₀ )/R ₀ ×1 /(TT ₀ )×10 ⁶ expression. Here, T in the formula represents the test temperature (℃), T ₀ represents the reference temperature (℃), R represents the resistance value (Ω) at the test temperature T, and R ₀ represents the resistance value at the test temperature T ₀ ( Ω). Cu-Mn-Ni alloys and Cu-Mn-Sn alloys have very low TCR, and therefore are widely used as metal materials constituting resistance materials (for example, refer to Patent Document 1). With the miniaturization and high integration of electrical and electronic parts in recent years, resistance materials have also been miniaturized. Along with this miniaturization, the dimensional accuracy when metal materials are press-formed to manufacture resistance materials has a greater influence on the resistance value deviation of resistors, and thus it is sought to improve the press-formability of metal materials of resistance materials. [Prior Art Document] (Patent Document)

Patent Document 1: Japanese Patent Publication No. 69724, 2016

[Problem to be Solved by the Invention] The problem to be solved by the present invention is to provide a copper alloy material for resistance material and a manufacturing method thereof, which has a low temperature coefficient of resistance and good press formability. In addition, the problem to be solved by the present invention is to provide a resistor whose resistance value is stable even if the ambient temperature changes, and the resistance value deviation is small.

[Technical Means for Solving the Problem] One aspect of the copper alloy material for resistance material of the present invention is that it contains 10% by mass or more and 14% by mass or less of manganese, and 1% by mass or more and 3% by mass or less. Nickel, the remainder is composed of copper and unavoidable impurities, and the crystal grain size is 8 microns (μm) or more and 60 μm or less. Another aspect of the copper alloy material for resistance materials of the present invention is that it contains 6 mass% or more and 8 mass% or less of manganese, 2 mass% or more and 4 mass% or less of tin, and the remainder is made of copper and cannot It is composed of avoidable impurities, and the crystal grain size is 8 μm or more and 60 μm or less.

A method of manufacturing a copper alloy material for resistance material in another aspect of the present invention, which manufactures the copper alloy material for resistance material of the above-mentioned aspect or the copper alloy material for resistance material of the above-mentioned another aspect, the focus of the method is Equipped with: a homogenization heat treatment step, which performs a heat treatment of 800°C or more and 950°C or less and lasts 10 minutes or more and 10 hours or less on the copper alloy ingot (ingot); a hot working step, which is homogenized by the homogenization heat treatment step Thermal processing is performed on the ingot after melting; an intermediate cold working step, which performs cold processing with a processing rate of more than 50% on the ingot after hot processing using the hot processing step; an intermediate recrystallization annealing step, which performs cold processing on the ingot after using the intermediate cold processing step The ingot is subjected to a heat treatment above 400°C and below 700°C for 10 seconds or more and 10 hours or less to perform recrystallization annealing; the final cold working step is performed on the ingot after the recrystallization annealing is performed using the intermediate recrystallization annealing step Cold working with a working rate of 5% or more and 80% or less; and, a final recrystallization annealing step, in which the ingot after being cold-worked by the final cold working step is subjected to 400°C or more and 700°C or less for 10 seconds or more and 10 hours or less Heat treatment to perform recrystallization annealing. The key point of another aspect of the resistor of the present invention is that at least a part of the above-mentioned one aspect of the resistance material is made of copper alloy material or the above-mentioned another aspect of the above-mentioned resistance material is made of copper alloy material.

[Effects of the invention] The copper alloy material for resistance material of the present invention has both a low temperature coefficient of resistance and good press formability. The method for manufacturing a copper alloy material for a resistance material of the present invention can produce a copper alloy material for a resistance material, which has a low temperature coefficient of resistance and good stamping formability. In the resistor of the present invention, even if the ambient temperature changes, the resistance value of the resistor is still stable, and the resistance value deviation is small.

A detailed description of one embodiment of the present invention is as follows. The copper alloy material for resistance materials of the first embodiment contains 10% by mass or more and 14% by mass or less of manganese (Mn), 1% by mass or more and 3% by mass or less of nickel (Ni), and the remainder is made of copper ( Cu) and unavoidable impurities, and the crystal grain size is 8 μm or more and 60 μm or less. In addition, after this paragraph, the copper alloy material for the resistance material of the first embodiment is also described as "Cu-Mn-Ni alloy material".

The copper alloy material for the resistance material of the second embodiment contains 6 mass% or more and 8 mass% or less of manganese, 2 mass% or more and 4 mass% or less of tin (Sn), and the remainder is made of copper and unavoidable It is composed of impurities, and the crystal grain size is 8 μm or more and 60 μm or less. In addition, after this paragraph, the copper alloy material for the resistance material of the second embodiment is also described as "Cu-Mn-Sn alloy material".

These copper alloy materials for resistance materials of the first and second embodiments have a crystal grain size of 8 μm or more and 60 μm or less, and therefore have both a low temperature coefficient of resistance and good press formability. Therefore, the copper alloy material for the resistance material of the first and second embodiments is suitable as a metal material constituting the resistance material, and the resistance material is used in resistors such as shunt resistors.

The copper alloy material for the resistance material of the first and second embodiments has a low resistance temperature coefficient, so even if the ambient temperature changes, the resistance value of the resistor remains stable. Regarding the temperature coefficient of resistance of the copper alloy material for resistance materials of the first and second embodiments, the absolute value of the temperature coefficient of resistance may be 50 ppm/K or less in the range of 20° C. or more and 50° C. or less. If the temperature coefficient of resistance is within the above range, the stability of the resistance value will be better when the ambient temperature changes.

In addition, the copper alloy materials for resistance materials of the first and second embodiments have good press formability. Therefore, when the copper alloy material is press-formed to produce a resistance material, even if the resistance material is small, the dimensional accuracy is excellent. Regarding the press formability of the copper alloy materials for resistance materials of the first and second embodiments, the shear ratio can be used as an index. For example, if the shear ratio measured by the shear test method of copper and copper alloy thin strips according to the technical standard JCBA T310: 2002 of the Japan Copper Wire Association is less than 85%, the stamping formability will be better, so the The dimensional accuracy during press forming will be better.

In addition, the copper alloy materials for resistance materials of the first and second embodiments are not only press formability, but also excellent formability in other processing methods. The copper alloy material for the resistance material of the first and second embodiments has excellent characteristics as described above. Therefore, the copper alloy material for the resistance material of the first and second embodiments is used to form at least a part In the resistor, even if the ambient temperature changes, the resistance value of the resistor is still stable, and the resistance value deviation is small.

The copper alloy material for the resistance material of the first embodiment contains 10% by mass or more and 14% by mass or less of manganese and 1% by mass or more and 3% by mass or less of nickel. If the manganese content is less than 10% by mass, There is a possibility that the TCR may become larger, and the crystal grain size may easily become larger during recrystallization annealing. On the other hand, if the content of manganese exceeds 14% by mass, the electrical resistivity may increase, and the crystal grain size may easily decrease during recrystallization annealing. Furthermore, there is a possibility that the corrosion resistance and manufacturability of the copper alloy material for resistance materials may decrease.

In addition, if the nickel content is less than 1% by mass, the TCR may increase, and the crystal grain size may easily increase during recrystallization annealing. Furthermore, there is a possibility that the corrosion resistance of the copper alloy material for resistance material may decrease. On the other hand, if the content of nickel exceeds 3% by mass, the electrical resistivity may increase, and the crystal grain size may easily decrease during recrystallization annealing. Furthermore, there is a possibility that the manufacturability of the copper alloy material for resistance material may decrease.

The copper alloy material for resistance materials of the second embodiment contains 6 mass% or more and 8 mass% or less of manganese, 2 mass% or more and 4 mass% or less of tin. If the manganese content is less than 6 mass%, There is a possibility that the TCR may become larger, and the crystal grain size may easily become larger during recrystallization annealing. On the other hand, if the content of manganese exceeds 8% by mass, the electrical resistivity may increase, and the crystal grain size may easily decrease during recrystallization annealing.

Moreover, if the content of tin is less than 2% by mass, the TCR may increase, and the crystal grain size may easily increase during recrystallization annealing. Furthermore, there is a possibility that the corrosion resistance of the copper alloy material for resistance material may decrease. On the other hand, if the content of tin exceeds 4% by mass, the electrical resistivity may increase, and the crystal grain size may easily decrease during recrystallization annealing. Furthermore, there is a possibility that the manufacturability of the copper alloy material for resistance material may decrease.

The copper alloy material for the resistance material of the first embodiment may further contain alloy components other than manganese and nickel. In addition, the copper alloy material for a resistance material of the second embodiment may further contain alloy components other than manganese and tin. In any embodiment of the copper alloy material for resistance material, the alloy components that can be contained are: iron (Fe) selected from 0.001 mass% to 0.5 mass%, 0.001 mass% to 0.1 mass% silicon ( Si), 0.001 mass% or more and 0.5 mass% or less chromium (Cr), 0.001 mass% or more and 0.2 mass% or less zirconium (Zr), 0.001 mass% or more and 0.2 mass% or less titanium (Ti), 0.001 mass% % Or more and 0.5% by mass or less of silver (Ag), 0.001% by mass or more and 0.5% by mass or less of magnesium (Mg), 0.001% by mass or more and 0.1% by mass or less of cobalt (Co), 0.001% by mass or more and 0.1% by mass One or two or more elements of the group consisting of phosphorus (P) in an amount of 0.001% by mass or more and 0.5% by mass or less of zinc (Zn).

By containing these alloy components, the heat resistance of the copper alloy material for the resistance material is improved, and the crystal grain growth becomes slower during the recrystallization annealing, so the control of the crystal grain size becomes easier. If the content of these alloy components exceeds the upper limit of the above-mentioned range, the effect of suppressing the growth of crystal grains may become excessive. In addition, the resistivity may increase, and the manufacturability of the copper alloy material for resistance material may decrease.

The copper alloy material for the resistance material of the first embodiment can achieve Vickers hardness by setting the crystal grain size within the aforementioned range and not performing cold working after the final recrystallization annealing step described later. It is 90 HV or more and less than 150 HV, more preferably 90 HV or more and 135 HV or less. If the Vickers hardness of the copper alloy material for the resistance material of the first embodiment is less than 90 HV, the crystal grain size will exceed and exceed the aforementioned range, and the press formability may become insufficient. On the other hand, if the Vickers hardness is 150HV or more, it means that the crystal grain size exceeds and is smaller than the aforementioned range, or cold working is performed after the final recrystallization annealing step, and thus a low temperature coefficient of resistance cannot be obtained.

The second embodiment of the copper alloy material for resistance materials can make the Vickers hardness 80HV or more by making the crystal grain size within the aforementioned range and without cold working after the final recrystallization annealing step described later. It is less than 120HV, and more preferably 90HV or more and 105HV or less. If the Vickers hardness of the copper alloy material for resistance material of the second embodiment is less than 80 HV, the crystal grain size will exceed and exceed the aforementioned range, and the press formability may become insufficient. On the other hand, if the Vickers hardness is 120HV or more, it means that the crystal grain size exceeds and is smaller than the aforementioned range, or cold working is performed after the final recrystallization annealing step, and thus a low temperature coefficient of resistance cannot be obtained.

Subsequently, the method of manufacturing the copper alloy material for the resistance material of the first and second embodiments will be described. The copper alloy material used as the resistance material of the first and second embodiments can be manufactured by the same method. That is, a method comprising: a homogenization heat treatment step of subjecting a copper alloy ingot to a heat treatment of 800° C. or more and 950° C. and a duration of 10 minutes or more and 10 hours or less; a thermal processing step that uses homogenization The ingot after the heat treatment step is homogenized is subjected to hot working; the intermediate cold working step is to perform cold working with a processing rate of more than 50% on the ingot after hot working by the hot working step; the intermediate recrystallization annealing step is to use intermediate cold working The ingot after the cold working step is subjected to a heat treatment at 400°C or higher and 700°C or higher and lasts for 10 seconds or more and 10 hours or less to perform recrystallization annealing; the final cold working step is to perform recrystallization annealing on the intermediate recrystallization annealing step The ingot is subjected to cold working with a processing rate of 5% or more and 80% or less; and the final recrystallization annealing step, which performs the cold working of the ingot by the final cold working step on the ingot after being cold-worked at 400°C or higher and 700°C or lower for 10 seconds or more and Heat treatment for less than 10 hours to perform recrystallization annealing.

With this manufacturing method, it is possible to manufacture the copper alloy materials for resistance materials of the first and second embodiments, the crystal grain size of which is 8 μm or more and 60 μm or less. The copper alloy materials for resistance materials of the first and second embodiments can be formed into parts of any shape, for example, they can be formed into wires, rods, plates, and the like. Hereinafter, as an example, a method for manufacturing a plate made of a copper alloy material for a resistance material of the first and second embodiments will be described.

First, a furnace or the like is used to melt the raw material and then cast to obtain an ingot having the above alloy composition (casting step). Subsequently, the ingot obtained by the casting step is heat-treated to homogenize the alloy composition (homogenization heat treatment step). The heat treatment conditions in the homogenization heat treatment step can be appropriately set according to the alloy composition. However, as an example, a condition of at least 800° C. and not more than 950° C for 10 minutes or more and 10 hours or less can be mentioned. If the heating temperature is too high or the heating time is too long, the workability of the copper alloy material for resistance material may decrease. On the other hand, if the heating temperature is too low or the heating time is too short, the homogenization of alloy components may become insufficient.

Subsequently, hot working is performed on the ingot homogenized by the homogenization heat treatment step, and the ingot is formed into a part of a desired shape (hot working step). For example, the ingot is hot rolled and formed into a plate-like shape having an approximately plate shape. Since the ingot immediately after the homogenization heat treatment step is heated to a high temperature, it is preferable to continuously transfer it to the hot working step to perform the hot working. When the thermal processing is completed, the plate-like object is cooled to normal temperature. Since an oxide film is formed on the surface of the plate after the thermal processing step, this oxide film is removed (surface grinding step).

Subsequently, cold working (intermediate cold working step) with a processing rate of 50% or more is performed on the plate-like object from which the oxide film has been removed. For example, cold rolling a plate to thin the plate thickness. If the processing rate is 50% or more, the material structure obtained up to the hot working step can be sufficiently refined. Therefore, the crystal grain size finally obtained does not become too large, and it is easy to become an appropriate size.

Subsequently, the plate-like object whose plate thickness is thinned by cold working in an intermediate cold working step is heat-treated to perform recrystallization annealing (intermediate recrystallization annealing step). The heat treatment conditions in the intermediate recrystallization annealing step can be appropriately set depending on the alloy composition, etc. However, as an example, a condition of 400° C. or more and 700° C. for 10 seconds or more and 10 hours or less can be mentioned. If the heating temperature is too high or the heating time is too long, the material structure obtained up to the thermal processing step may not be sufficiently refined and the crystal grain size finally obtained may not be reduced. On the other hand, if the heating temperature is too low or the heating time is too short, the recrystallized structure may not be obtained, or the recrystallized structure may become too small, and the finally obtained crystal grain size may become small. For this heat treatment, a batch heat treatment in which the plate is placed in a furnace and then heated, can also be used, and a traveling heat treatment in which the plate is continuously passed through a heated furnace can also be used.

Subsequently, the plate after the recrystallization annealing is performed in the intermediate recrystallization annealing step is subjected to cold working with a working rate of 5% or more and 80% or less (final cold working step). For example, cold-rolling a plate-shaped object can further reduce the plate thickness to a desired thickness. If the processing rate exceeds 80%, the crystal grain size finally obtained may become smaller. On the other hand, if the processing rate is less than 5%, the recrystallized structure may not be obtained, or the crystal grain size finally obtained may become large.

Subsequently, the plate-like object whose plate thickness is further thinned by cold working in the final cold working step is heat-treated to perform recrystallization annealing (final recrystallization annealing step). The heat treatment conditions in the final recrystallization annealing step can be appropriately set depending on the alloy composition, etc. However, as an example, a condition of 400° C. or more and 700° C. for 10 seconds or more and 10 hours or less can be mentioned. If the heating temperature is too high, the heating time is too long, etc., the crystal grain size finally obtained may become larger. On the other hand, if the heating temperature is too low and the heating time is too short, there is a possibility that the recrystallized structure cannot be obtained or the crystal grain size finally obtained becomes small. For this heat treatment, a batch heat treatment in which a plate is placed in a furnace and then heated up can be used, or a mobile heat treatment in which a plate is continuously passed through a heated furnace.

With the manufacturing method including the steps described above, it is possible to manufacture a plate made of the copper alloy material for the resistance material of the first and second embodiments, the crystal grain size of which is 8 μm or more and 60 μm or less. Furthermore, depending on the manufacturing method and conditions, the crystal grain size can be 8 μm or more and 45 μm or less, and it can also be 8 μm or more and 25 μm or less. Through the intermediate cold working step and the intermediate recrystallization annealing step, the material structure obtained up to the hot working step is sufficiently refined, and the final cold working step and the final recrystallization annealing step are used to obtain the desired crystal grain size . However, the intermediate cold working step and the intermediate recrystallization annealing step may be performed once each, or they may be repeated multiple times before the final cold working step.

In addition, between adjacent steps and steps, or after the final recrystallization annealing step, treatments such as shape correction, oxide film removal, degreasing, and rust prevention may be performed. However, if any step is performed after the final recrystallization annealing step, if the processing is low deformation, the structure may become uneven and stable TCR may not be obtained. In the case of high deformation, the hardness may increase and the operation may become difficult. Therefore, it is preferable not to perform any processing after the final recrystallization annealing step.

In addition, this embodiment mode shows an example of the present invention, and the present invention is not limited to this embodiment. In addition, various changes or improvements can be added to this embodiment, and various changes or improvements can also be included in the present invention. [Example]

Hereinafter, examples and comparative examples are shown to further specifically illustrate the present invention. An ingot with a predetermined alloy composition is produced by casting, and the heating temperature is 800°C or higher and 950°C or lower, and the heating time is 10 minutes or more and 10 hours or less. It is formed into a plate shape by hot rolling and water-cooled.

Subsequently, after surface grinding is performed on the plate obtained by hot rolling to remove the oxide film on the surface, the plate is cold rolled at a predetermined processing rate (intermediate cold working step), and further followed by The predetermined conditions (heating temperature and heating time) are heat treated to perform recrystallization annealing (intermediate recrystallization annealing step). Furthermore, the plate is cold rolled at a predetermined processing rate (final cold working step), and then subjected to heat treatment under predetermined conditions (heating temperature and heating time) to perform recrystallization annealing (final recrystallization annealing step) , And obtain a thickness of 0.2mm plate.

The alloy composition is shown in Tables 1 to 4, and the remainder other than the alloy composition shown in Tables 1 to 4 is copper and unavoidable impurities. In addition, the conditions of the intermediate cold working step, the intermediate recrystallization annealing step, the final cold working step, and the final recrystallization annealing step are shown in Tables 1 to 4. Table 1 is an example of Cu-Mn-Ni alloy material after various changes of alloy composition, and Table 2 is an example of Cu-Mn-Sn alloy material after various changes of alloy composition. In addition, Table 3 is an example of Cu-Mn-Ni alloy materials with various changes in the conditions of the above four steps, and Table 4 is a Cu-Mn-Sn alloy material with various changes in the conditions of the above four steps example. In addition, the manufacturing conditions of Tables 1 and 2 are better than those of Tables 3 and 4.

[Table 1]

[Table 2]

[table 3]

[Table 4]

Various evaluations were performed on the plates of Examples 1 to 36 and Comparative Examples 1 to 36 shown in Tables 1 to 4. The content and method are explained below. In addition, the evaluation results are shown in Tables 5-8. <About the measurement of crystal grain size> The measurement of the crystal grain size was carried out in accordance with the cutting method of the crystal grain size test method for copper elongated products (products obtained by rolling copper) specified in JIS H0501 (1986). That is, after the sheet material is cut along the rolling direction to expose the cross section, the cross section is subjected to wet mirror polishing. Then, after etching the polished surface, it is observed with a metallurgical microscope, and the crystal grain size is measured from the observed image.

<About X-ray diffraction> The X-ray diffraction of the θ-2θ method was performed on the surface of the plate, and (111), (200), (220), (311), (222), (400), ( 331) and (420) peaks, and evaluate their volume ratio and half-value width. In addition, the type of incident X-ray is Cu-Kα, the lamp voltage is 40kV, the lamp current is 20mA, and the sampling speed is 1°/min.

<About the measurement of the temperature coefficient of resistance> According to the method specified in JIS C2526 (1994), the temperature coefficient of resistance of the sheet material in the range of 20°C or more and 50°C or less was measured. The case where the absolute value of the temperature coefficient of resistance in the range of 20°C or higher and 50°C or lower is 50 ppm/K or lower is regarded as acceptable, and is indicated by the "○" symbol in Tables 5 to 8. If the absolute value of the temperature coefficient of resistance in the range of 20°C or higher and 50°C or lower exceeds 50 ppm/K, it is regarded as unacceptable, and it is shown as "×" in Tables 5 to 8.

<About stamping formability> The stamping formability of the sheet is evaluated by the shear ratio measured according to the shear test method of copper and copper alloy thin strips specified in the technical standard JCBA T310: 2002 of the Japan Copper Wire Association. That is, a punching machine, rectangular die dice, etc. are used to punch the plate to expose a section perpendicular to the rolling direction of the plate (punching fracture surface), and then use a scanning electron microscope to observe the section. And calculate the shear ratio. In addition, regarding the conditions in the sheet punching, the clearance is 10 μm, the punching speed is 200 mm/s, and the lubrication condition is no lubrication. In the case where the shear ratio is less than 85%, it is evaluated that the press formability is excellent, and it is indicated by "○" in Tables 5 to 8. When the shear ratio is 85% or more, it is evaluated that the press formability is insufficient, and it is indicated by the symbol "×" in Tables 5 to 8.

<About the measurement of Vickers hardness> According to the method specified in JIS Z2244 (2009), the Vickers hardness was measured from the surface of the sheet material. In addition, the load is 2.9N, and the depressing time of the indenter is 15 seconds.

From the results shown in Tables 5 to 8, it can be seen that the plates of Examples 1 to 36 have a crystal grain size of 8 μm or more and 60 μm or less, and therefore have a low temperature coefficient of resistance and good press formability. In contrast, Comparative Examples 1 to 8 are examples in which the alloy composition exceeds the appropriate range of the present invention. The plates of Comparative Examples 1 to 7 have alloy compositions beyond the appropriate range of the present invention, so the crystal grain size becomes less than 8 μm or exceeds 60μm, and cannot have both low resistance temperature coefficient and good stamping formability. In addition, since Comparative Example 1 and Comparative Example 4 have a low Mn content, even if the crystal grain size is within a predetermined range, a low temperature coefficient of resistance cannot be obtained.

In Comparative Example 8, the alloy composition is out of the suitable range of the present invention. Therefore, when the hot rolling is delayed, cracks will occur in the plate, and it is impossible to proceed to the subsequent steps to obtain the plate. Comparative Examples 9 to 44 are examples where the manufacturing conditions are outside the suitable range of the present invention. The plates of Comparative Examples 9 to 14, 17 to 23, 26 to 32, 35 to 41 and 44 are manufactured under conditions outside the suitable range of the present invention Therefore, the crystal grain size becomes less than 8 μm or more than 60 μm, and it is impossible to have both low temperature coefficient of resistance and good press formability. The plates of Comparative Examples 15, 16, 24, 25, 33, 34, 42, and 43 have manufacturing conditions outside of the appropriate range of the present invention. Therefore, the final recrystallization annealing step cannot be used to obtain a recrystallized structure, and it cannot have both low Temperature coefficient of resistance and good stamping formability.

[table 5]

[Table 6]

[Table 7]

[Table 8]

no

no

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Claims (9)

A copper alloy material for resistance materials, which contains 10% by mass or more and 14% by mass or less of manganese, 1% by mass or more and 3% by mass or less of nickel, the remainder is composed of copper and unavoidable impurities, and crystal grains The diameter is 8 microns or more and 60 microns or less. The copper alloy material for resistance material according to claim 1, wherein the Vickers hardness is 90 HV or more and less than 150 HV. A copper alloy material for resistance materials, which contains 6 mass% or more and 8 mass% or less of manganese, 2 mass% or more and 4 mass% or less of tin, and the remainder is composed of copper and unavoidable impurities, and crystal grains The diameter is 8 microns or more and 60 microns or less. The copper alloy material for resistance material according to claim 3, wherein the Vickers hardness is 80 HV or more and less than 120 HV. The copper alloy material for resistance materials according to any one of claims 1 to 4, which further contains iron selected from the group consisting of 0.001% by mass or more and 0.5% by mass or less, 0.001% by mass or more and 0.1% by mass or less silicon, 0.001 mass% or more and 0.5 mass% or less chromium, 0.001 mass% or more and 0.2 mass% or less zirconium, 0.001 mass% or more and 0.2 mass% or less titanium, 0.001 mass% or more and 0.5 mass% or less silver, 0.001 mass% % Or more and 0.5% by mass or less of magnesium, 0.001% by mass or more and 0.1% by mass or less of cobalt, 0.001% by mass or more and 0.1% by mass or less of phosphorus, and 0.001% by mass One or two or more elements of the group consisting of more than 0.5% by mass of zinc. The copper alloy material for a resistance material according to any one of claims 1 to 4, wherein the absolute value of the temperature coefficient of resistance is 50 ppm/K or less in the range of 20°C or more and 50°C or less. The copper alloy material for resistance material according to any one of claims 1 to 4, wherein the shear measured according to the shear test method of copper and copper alloy thin strips specified in the technical standard JCBAT310: 2002 of the Japan Copper Wire Association The ratio is less than 85%. A method for manufacturing a copper alloy material for a resistance material, which manufactures the copper alloy material for a resistance material according to any one of claims 1 to 7, the method comprising: a homogenization heat treatment step, which performs a copper alloy ingot 800°C or more and 950°C or less and lasted for 10 minutes or more and 10 hours or less; a thermal processing step, which performs thermal processing on the ingot homogenized by the aforementioned homogenization heat treatment step; an intermediate cold processing step, which uses the aforementioned In the hot working step, the ingot after the hot working is cold worked with a working rate of 50% or more; the intermediate recrystallization annealing step is performed on the ingot after the cold working in the aforementioned intermediate cold working step is 400°C or higher and 700°C or lower for 10 seconds Heat treatment above and below 10 hours to perform recrystallization The final cold working step, which uses the aforementioned intermediate recrystallization annealing step to perform the recrystallization annealing on the ingot after the recrystallization annealing is performed cold working with a processing rate of 5% or more and 80% or less; and a final recrystallization annealing step, which uses the aforementioned final cold working step The cold-worked ingot is subjected to a heat treatment of 400° C. or more and 700° C. for 10 seconds or more and 10 hours or less to perform recrystallization annealing. A resistor comprising at least a part of the copper alloy material for resistance material according to any one of claims 1 to 7.