JP6382478B1 - Copper alloy material for resistance material, manufacturing method thereof and resistor - Google Patents

Abstract

Provided are a copper alloy material for a resistance material that has both a low temperature coefficient of resistance and good press formability, and a method for producing the same. One resistance-use copper alloy material contains 10 mass% or more and 14 mass% or less of manganese, 1 mass% or more and 3 mass% or less of nickel, the balance is made of copper and inevitable impurities, and the crystal grain size is 8 μm or more and 60 μm. It is as follows. Another copper alloy material for resistance material contains 6 mass% or more and 8 mass% or less of manganese, 2 mass% or more and 4 mass% or less of tin, and the remainder consists of copper and inevitable impurities, and the crystal grain size is 8 μm or more and 60 μm. It is as follows.

Description

  The present invention relates to a copper alloy material for a resistance material, a manufacturing method thereof, and a resistor.

The metal material of the resistor used for the resistor has a small resistance temperature coefficient (hereinafter sometimes referred to as “TCR”) so that the resistance of the resistor is stabilized even when the environmental temperature changes. Required. The temperature coefficient of resistance is the magnitude of the change in resistance value due to temperature expressed in parts per million, and TCR (× 10 ⁻⁶ / K) = (R−R ₀ ) / R _0. X1 / (T−T ₀ ) × 10 ⁶ Here, T in the formula is a test temperature (° C.), T ₀ is a reference temperature (° C.), R is a resistance value (Ω) at the test temperature T, and R ₀ is a resistance value (Ω) at the test temperature T ₀ . . Cu-Mn-Ni alloys and Cu-Mn-Sn alloys have a very small TCR, and are therefore widely used as metal materials constituting resistance materials (see, for example, Patent Document 1).
With the recent miniaturization and integration of electrical and electronic components, the resistance materials are also becoming smaller. Along with this miniaturization, the dimensional accuracy when producing resistance materials by press forming metal materials has had a greater effect on the variation in resistance values of resistors, improving the press formability of resistance material metal materials. Is required.

Japanese Patent Publication No. 2016 No. 69724

  This invention makes it a subject to provide the copper alloy material for resistance materials which has a small resistance temperature coefficient, and favorable press-formability, and its manufacturing method. Another object of the present invention is to provide a resistor that has a stable resistance value and a small variation in resistance value even when the environmental temperature changes.

The copper alloy material for a resistance material according to one embodiment of the present invention contains 10% by mass to 14% by mass of manganese, 1% by mass to 3% by mass of nickel, and the balance is made of copper and inevitable impurities. The gist is that the diameter is 8 μm or more and 60 μm or less.
The copper alloy material for a resistance material according to another aspect of the present invention contains 6% by mass to 8% by mass of manganese, 2% by mass to 4% by mass of tin, and the balance is made of copper and inevitable impurities. The gist is that the particle diameter is 8 μm or more and 60 μm or less.

A method for producing a copper alloy material for resistance material according to another aspect of the present invention is a method for producing a copper alloy material for resistance material according to the above aspect or another aspect, wherein A homogenization heat treatment process in which heat treatment is performed at a temperature of 950 ° C. to 950 ° C. for 10 minutes to 10 hours, a hot working process in which hot working is performed on the ingot homogenized in the homogenization heat treatment process, and a hot working process An intermediate cold working process in which a hot working is performed on the ingot that has a working rate of 50% or more, and an ingot that has been cold worked in the intermediate cold working process is 400 ° C. or higher and 700 ° C. or lower, 10 ° C. An intermediate recrystallization annealing step in which recrystallization annealing is performed by performing a heat treatment for at least 10 seconds and not more than 10 hours, and an ingot subjected to recrystallization annealing in the intermediate recrystallization annealing step has a processing rate of 5% to 80%. Cold working is performed in the final cold working process and the final cold working process. Was 400 ° C. or higher 700 ° C. or less in the ingot, and summarized in that comprising a final recrystallization annealing step of recrystallization annealing performed by performing the following heat treatment above 10 seconds 10 hours, the.
A gist of a resistor according to another aspect of the present invention is that at least a part of the resistor is made of the copper alloy material for a resistance material according to the one aspect or the other aspect.

The copper alloy material for resistance material of the present invention has both a low temperature coefficient of resistance and good press formability.
The method for producing a copper alloy material for resistance material according to the present invention can produce a copper alloy material for resistance material having both a small temperature coefficient of resistance and good press formability.
The resistor of the present invention has a stable resistance value and a small variation in resistance value even when the environmental temperature changes.

An embodiment of the present invention will be described in detail below.
The copper alloy material for resistance material of 1st embodiment contains 10 mass% or more and 14 mass% or less of manganese (Mn), 1 mass% or more and 3 mass% or less of nickel (Ni), and the remainder is copper (Cu) and It consists of inevitable impurities and has a crystal grain size of 8 μm or more and 60 μm or less. In the following, the copper alloy material for resistance material of the first embodiment may be referred to as “Cu—Mn—Ni alloy material”.

  The copper alloy material for resistance material of the second embodiment contains 6 mass% or more and 8 mass% or less of manganese, 2 mass% or more and 4 mass% or less of tin (Sn), and the balance is made of copper and inevitable impurities, The particle size is 8 μm or more and 60 μm or less. In the following, the copper alloy material for resistance material of the second embodiment may be referred to as “Cu—Mn—Sn alloy material”.

  The copper alloy materials for resistance materials according to the first and second embodiments have a small resistance temperature coefficient and good press formability because the crystal grain size is controlled to be not less than 8 μm and not more than 60 μm. Therefore, the copper alloy material for resistance material of 1st and 2nd embodiment is suitable as a metal material which comprises the resistance material used for resistors, such as a shunt resistor, for example.

  Since the resistance temperature coefficient of the copper alloy material for resistance material according to the first and second embodiments is small, the resistance value is stable even if the environmental temperature changes. About the resistance temperature coefficient of the copper alloy material for resistance materials of 1st and 2nd embodiment, the absolute value of the resistance temperature coefficient of the range of 20 to 50 degreeC may be 50 ppm / K or less. When the temperature coefficient of resistance is within the above range, the stability of the resistance value when the environmental temperature changes is better.

  In addition, since the copper alloy material for resistance material of the first and second embodiments has good press formability, when the resistance material is manufactured by press-molding the copper alloy material, the resistance material is small. Also has excellent dimensional accuracy. Regarding the press formability of the copper alloy material for resistance material of the first and second embodiments, the shear ratio can be used as an index. For example, if the shear ratio measured according to the shear test method of copper and copper alloy sheet strip specified in the Japan Copper and Brass Association Technical Standard JCBA T310: 2002 is less than 85%, the press formability is more excellent, Excellent dimensional accuracy in press molding.

In addition, the copper alloy material for resistance materials of 1st and 2nd embodiment is excellent not only in press moldability but the moldability in another processing method.
Since the copper alloy material for resistance material of the first and second embodiments has the excellent characteristics as described above, at least a part of the copper alloy material for resistance material of the first or second embodiment is constituted. In addition, the resistance value of the resistor is stable even when the environmental temperature changes, and variation in the resistance value is small.

  Although the copper alloy material for resistance materials of 1st embodiment contains 10 mass% or more and 14 mass% or less manganese, and 1 mass% or more and 3 mass% or less nickel, content of manganese is less than 10 mass% If it is, the TCR may increase, and the crystal grain size tends to increase during recrystallization annealing. On the other hand, if the manganese content is more than 14% by mass, the electrical resistivity may increase, and the crystal grain size tends to be small during recrystallization annealing. Furthermore, there exists a possibility that the corrosion resistance and manufacturability of the copper alloy material for resistance material may be lowered.

  Further, if the nickel content is less than 1% by mass, the TCR may increase and the crystal grain size tends to increase during recrystallization annealing. Furthermore, the corrosion resistance of the copper alloy material for resistance material may be reduced. On the other hand, if the nickel content exceeds 3% by mass, the electrical resistivity may increase, and the crystal grain size tends to be small during recrystallization annealing. Furthermore, the manufacturability of the copper alloy material for resistance material may be reduced.

  Although the copper alloy material for resistance materials of 2nd embodiment contains 6 mass% or more and 8 mass% or less manganese, and 2 mass% or more and 4 mass% or less tin, content of manganese is less than 6 mass% If it is, the TCR may increase, and the crystal grain size tends to increase during recrystallization annealing. On the other hand, if the manganese content is more than 8% by mass, the electrical resistivity may increase, and the crystal grain size tends to be small during recrystallization annealing.

  Further, if the content of tin is less than 2% by mass, the TCR may be increased, and the crystal grain size tends to be increased during recrystallization annealing. Furthermore, the corrosion resistance of the copper alloy material for resistance material may be reduced. On the other hand, if the tin content exceeds 4% by mass, the electrical resistivity may be increased, and the crystal grain size tends to be reduced during recrystallization annealing. Furthermore, the manufacturability of the copper alloy material for resistance material may be reduced.

  The copper alloy material for resistance material of the first embodiment may further contain alloy components other than manganese and nickel. Moreover, the copper alloy material for resistance material of 2nd embodiment may further contain alloy components other than manganese and tin. In any embodiment of the copper alloy material for resistance material, the alloy components that can be contained are 0.001 mass% or more and 0.5 mass% or less of iron (Fe), 0.001 mass% or more and 0.001 mass% or more of silicon (Si). 1% by mass or less, chromium (Cr) 0.001% by mass to 0.5% by mass, zirconium (Zr) 0.001% by mass to 0.2% by mass, titanium (Ti) 0.001% by mass to 0% 0.2 mass% or less, silver (Ag) 0.001 mass% to 0.5 mass%, magnesium (Mg) 0.001 mass% to 0.5 mass%, cobalt (Co) 0.001 mass% or more One or more selected from the group consisting of 0.1 mass% or less, phosphorus (P) 0.001 mass% or more and 0.1 mass% or less, and zinc (Zn) 0.001 mass% or more and 0.5 mass% or less Two or more elements.

  By containing these alloy components, the heat resistance of the copper alloy material for resistance material is improved, and the growth of crystal grains is slowed during recrystallization annealing, so that the control of the crystal grain size becomes easier. If the content of these alloy components exceeds the upper limit of the above range, the effect of suppressing the growth of crystal grains may be too great. Moreover, there exists a possibility that an electrical resistivity may become high, and there exists a possibility that the manufacturability of the copper alloy material for resistance materials may fall.

  The copper alloy material for a resistance material according to the first embodiment has a crystal grain size in the above-described range, and is not subjected to cold working after the final recrystallization annealing process described later, whereby the Vickers hardness is 90 HV or more and less than 150 HV. More preferably, it is 90 HV or more and 135 HV or less. If the Vickers hardness of the copper alloy material for resistance material of the first embodiment is less than 90 HV, the crystal grain size may be larger than the above range, and the press formability may be insufficient. On the other hand, if it is 150 HV or more, it means that the crystal grain size is small outside the above range, or that cold working has been performed after the final recrystallization annealing step, and a small resistance temperature coefficient is obtained. It may not be possible.

  The copper alloy material for a resistance material of the second embodiment has a crystal grain size in the above-described range, and does not perform cold working after the final recrystallization annealing process described later, whereby the Vickers hardness is 80 HV or more and less than 120 HV. More preferably, it is 90 HV or more and 105 HV or less. If the Vickers hardness of the copper alloy material for resistance material of the second embodiment is less than 80 HV, the crystal grain size may be larger than the above range, and the press formability may be insufficient. On the other hand, if it is 120 HV or more, it means that the crystal grain size is small outside the above range, or that cold working has been performed after the final recrystallization annealing step, and a small resistance temperature coefficient is obtained. It may not be possible.

  Next, the manufacturing method of the copper alloy material for resistance materials of 1st and 2nd embodiment is demonstrated. The copper alloy material for resistance material of 1st and 2nd embodiment can be manufactured by the same method. That is, a homogenization heat treatment process in which a copper alloy ingot is subjected to heat treatment at 800 ° C. or more and 950 ° C. or less for 10 minutes or more and 10 hours or less; An ingot that has been cold worked in the intermediate cold working process, an intermediate cold working process in which cold working with a working rate of 50% or more is performed on the ingot that has been hot worked in the hot working process To an ingot subjected to recrystallization annealing in an intermediate recrystallization annealing step in which heat treatment is performed at 400 ° C. to 700 ° C. for 10 seconds to 10 hours to perform recrystallization annealing, and in the intermediate recrystallization annealing step. A final cold working step in which cold working is performed at a working rate of 5% to 80%, and an ingot subjected to cold working in the final cold working step is 400 ° C to 700 ° C, 10 seconds to 10 hours A final recrystallization annealing step in which heat treatment is performed and recrystallization annealing is performed; It is a method provided.

  By such a manufacturing method, the copper alloy material for resistance material of 1st and 2nd embodiment whose crystal grain diameter is 8 micrometers or more and 60 micrometers or less can be manufactured. The copper alloy material for resistance material of the first and second embodiments can be formed into a member having any shape, and can be formed into, for example, a wire, a bar, a plate, or the like. Below, the manufacturing method of the board | plate material comprised with the copper alloy material for resistance materials of 1st and 2nd embodiment is demonstrated as an example.

  First, raw materials are melted and cast using a furnace or the like to obtain an ingot having the above alloy components (casting process). Next, the ingot obtained in the casting process is heat treated to homogenize the alloy components (homogenized heat treatment process). The conditions for the heat treatment in the homogenization heat treatment step may be set as appropriate according to the alloy composition. As an example, a condition of 800 ° C. to 950 ° C. for 10 minutes to 10 hours can be given. If the heating temperature is too high or the heating time is too long, the workability of the copper alloy material for resistance material may be reduced. On the other hand, if the heating temperature is too low or the heating time is too short, homogenization of the alloy components may be insufficient.

  Subsequently, the ingot homogenized by the homogenization heat treatment step is subjected to hot working, and the ingot is formed into a member having a desired shape (hot working step). For example, the ingot is hot-rolled to form a substantially plate-like plate. Since the ingot immediately after the homogenization heat treatment step is in a state of being heated to a high temperature, it is preferable to proceed to the hot working step as it is and perform hot working. When the hot working is finished, the plate is cooled to room temperature. Since the oxide film is formed on the surface of the plate-like material after the hot working process, the oxide film is removed (face cutting process).

  Next, the plate-like product from which the oxide film has been removed is subjected to cold working with a working rate of 50% or more (intermediate cold working step). For example, the plate is cold-rolled to reduce the plate thickness. If the processing rate is 50% or more, the material structure obtained up to the hot working step can be sufficiently refined, so that the finally obtained crystal grain size does not become too large, and is appropriate. It tends to be large.

  Subsequently, the plate-like material that has been subjected to cold working in the intermediate cold working step to reduce the plate thickness is heat-treated and subjected to recrystallization annealing (intermediate recrystallization annealing step). The conditions for the heat treatment in the intermediate recrystallization annealing step may be set as appropriate according to the alloy composition and the like. As an example, the conditions may be 400 ° C. or more and 700 ° C. or less and 10 seconds or more and 10 hours or less. If the heating temperature is too high or the heating time is too long, the material structure obtained up to the hot working process cannot be sufficiently refined, and the crystal grain size finally obtained cannot be reduced. There is a fear. On the other hand, if the heating temperature is too low or the heating time is too short, a recrystallized structure may not be obtained, or the recrystallized structure may be too small and the finally obtained crystal grain size may be small. For this heat treatment, a batch heat treatment in which the temperature is raised by placing the plate-like material in a furnace may be used, or a running heat treatment in which the plate-like material is continuously passed through the heated temperature may be used. .

  Next, the plate-like product subjected to recrystallization annealing in the intermediate recrystallization annealing step is subjected to cold working with a working rate of 5% or more and 80% or less (final cold working step). For example, the plate-like material is cold-rolled to further reduce the plate thickness to a desired thickness. If the processing rate exceeds 80%, the crystal grain size finally obtained may be small. On the other hand, if the processing rate is less than 5%, a recrystallized structure may not be obtained, or the crystal grain size finally obtained may increase.

  Subsequently, the plate-like material that has been subjected to cold working in the final cold working step to further reduce the plate thickness is heat-treated and subjected to recrystallization annealing (final recrystallization annealing step). The conditions for the heat treatment in the final recrystallization annealing process may be set as appropriate according to the alloy composition and the like, but as an example, conditions of 400 ° C. or more and 700 ° C. or less and 10 seconds or more and 10 hours or less can be mentioned. If the heating temperature is too high or the heating time is too long, the finally obtained crystal grain size may be increased. On the other hand, if the heating temperature is too low or the heating time is too short, a recrystallized structure may not be obtained, or the crystal grain size finally obtained may be small. For this heat treatment, a batch heat treatment in which the temperature is raised by placing the plate-like material in a furnace may be used, or a running heat treatment in which the plate-like material is continuously passed through the heated temperature may be used. .

  By the manufacturing method including the steps as described above, a plate material made of the copper alloy material for resistance materials of the first and second embodiments having a crystal grain size of 8 μm or more and 60 μm or less can be manufactured. Furthermore, the crystal grain size can be 8 μm or more and 45 μm or less, or 8 μm or more and 25 μm or less, depending on the manufacturing method and conditions. The material structure obtained up to the hot working process is sufficiently refined by the intermediate cold working process and the intermediate recrystallization annealing process, and the desired crystal is obtained by the final cold working process and the final recrystallization annealing process. Obtain the particle size. However, the intermediate cold working step and the intermediate recrystallization annealing step may be performed once each, or may be repeated a plurality of times before the final cold working step.

  Moreover, you may implement processes, such as shape correction, oxide film removal, degreasing | defatting, and rust prevention, between adjacent processes or after the last recrystallization annealing process. However, if any processing is performed after the final recrystallization annealing step, the structure may become non-uniform if the processing is light processing, and a stable TCR may not be obtained. If the processing is strong processing, the hardness increases. Therefore, handling may be difficult. Therefore, it is preferable not to perform any processing after the final recrystallization annealing step.

  In addition, this embodiment shows an example of this invention and this invention is not limited to this embodiment. In addition, various changes or improvements can be added to the present embodiment, and forms to which such changes or improvements are added can also be included in the present invention.

  The present invention will be described more specifically with reference to the following examples and comparative examples. An ingot having a predetermined alloy composition is manufactured by casting, heat treated under conditions of a heating temperature of 800 ° C. or more and 950 ° C. or less and a heating time of 10 minutes or more and 10 hours or less, and the alloy components are homogenized, followed by hot rolling. And then cooled with water.

  Next, after chamfering the plate obtained by hot rolling to remove the oxide film on the surface, the plate is cold rolled at a predetermined processing rate (intermediate cold working step) and further continued Then, it was heat-treated under predetermined conditions (heating temperature and heating time) and subjected to recrystallization annealing (intermediate recrystallization annealing step). Further, the plate-like material is cold-rolled at a predetermined processing rate (final cold-working step), followed by heat treatment under predetermined conditions (heating temperature and heating time) and recrystallization annealing (final recrystallization annealing) Step) to obtain a plate material having a thickness of 0.2 mm.

  The alloy composition is as shown in Tables 1 to 4, but the balance other than the alloy components shown in Tables 1 to 4 is copper and inevitable impurities. In addition, each condition of the intermediate cold working step, the intermediate recrystallization annealing step, the final cold working step, and the final recrystallization annealing step is as shown in Tables 1 to 4. Table 1 shows examples of Cu—Mn—Ni alloy materials with various alloy compositions, and Table 2 shows examples of Cu—Mn—Sn alloy materials with various alloy compositions. Table 3 is an example of a Cu-Mn-Ni alloy material in which the conditions of the four steps are variously changed, and Table 4 is an example of the Cu-Mn-Sn alloy material in which the conditions of the four steps are variously changed. It is an example. In addition, the manufacturing conditions of Tables 1 and 2 are more preferable than the manufacturing conditions of Tables 3 and 4.

Various evaluation was performed about the board | plate material of Examples 1-36 and Comparative Examples 1-36 shown in Tables 1-4. The contents and method will be described below. Moreover, an evaluation result is shown to Tables 5-8.
<Measurement of crystal grain size>
The crystal grain size was measured in accordance with the cutting method of the copper grain size test method specified in JIS H0501 (1986). That is, the plate material was cut along the rolling direction to expose the cross section, and wet specular polishing was performed on the cross section. And after etching the polishing surface, it observed using the metal microscope, and measured the crystal grain diameter from the observation image.

<About X-ray diffraction>
The X-ray diffraction of the θ-2θ method is performed on the surface of the plate material, and (111), (200), (220), (311), (222), (400), (331), (420) Peaks were detected and their volume ratio and half width were evaluated. The type of incident X-ray is Cu-Kα, the tube voltage is 40 kV, the tube current is 20 mA, and the sampling rate is 1 ° / min.

<Measurement of resistance temperature coefficient>
In accordance with the method prescribed in JIS C2526 (1994), the resistance temperature coefficient of the plate material in the range of 20 ° C. or more and 50 ° C. or less was measured. When the absolute value of the resistance temperature coefficient in the range of 20 ° C. or more and 50 ° C. or less was 50 ppm / K or less, it was regarded as acceptable, and in Tables 5 to 8, it was indicated by “◯”. When the absolute value of the temperature coefficient of resistance in the range of 20 ° C. or more and 50 ° C. or less was over 50 ppm / K, it was rejected, and in Tables 5 to 8, it was indicated by “x”.

<About evaluation of press formability>
The press formability of the plate material was evaluated based on the shear ratio measured according to the shear test method for copper and copper alloy thin strips defined in Japan Copper and Brass Association Technical Standard JCBA T310: 2002. That is, a plate material is punched using a press machine, a square die, etc., a cross section (press fracture surface) perpendicular to the rolling direction of the plate material is exposed, and the cross section is observed using a scanning electron microscope to determine the shear ratio. Calculated. Regarding the conditions for punching the plate material, the clearance is 10 μm, the press speed is 200 mm / s, and the lubrication condition is no lubrication.
When the shear ratio was less than 85%, it was evaluated that the press formability was excellent, and in Tables 5 to 8, it was indicated by “◯”. When the shear ratio was 85% or more, it was evaluated that the press formability was insufficient, and in Tables 5 to 8, it was indicated by “x” marks.

<Measurement of Vickers hardness>
Vickers hardness was measured from the surface of the plate material in accordance with the method defined in JIS Z2244 (2009). The load is 2.9 N and the indenter reduction time is 15 s.

As can be seen from the results shown in Tables 5 to 8, the plate materials of Examples 1 to 36 have a small resistance temperature coefficient and good press formability because the crystal grain size is 8 μm or more and 60 μm or less.
On the other hand, Comparative Examples 1 to 8 are examples in which the alloy composition is outside the preferred range of the present invention, but the plate materials of Comparative Examples 1 to 7 are out of the preferred range of the present invention in the alloy composition. Therefore, the crystal grain size was less than 8 μm or more than 60 μm, and it was impossible to combine a small resistance temperature coefficient with good press formability. Moreover, since the comparative example 1 and the comparative example 4 had low Mn content, even if the crystal grain size was in the prescribed range, a small resistance temperature coefficient could not be obtained.

In Comparative Example 8, since the alloy composition was outside the preferred range of the present invention, cracking occurred in the plate-like material during hot rolling, and it was not possible to proceed to the subsequent steps to obtain a plate material.
Comparative Examples 9 to 44 are examples in which the manufacturing conditions are outside the preferred range of the present invention, but the plate materials of Comparative Examples 9 to 14, 17 to 23, 26 to 32, 35 to 41, and 44 are manufactured. Since the conditions were outside the preferred range of the present invention, the crystal grain size was less than 8 μm or more than 60 μm, and it was impossible to combine a small resistance temperature coefficient and good press formability.
Since the plate conditions of Comparative Examples 15, 16, 24, 25, 33, 34, 42, and 43 are out of the preferred range of the present invention, the recrystallization structure cannot be obtained by the final recrystallization annealing process. It was impossible to combine a small resistance temperature coefficient and good press formability.

Claims (9)

  A copper alloy material for a resistance material containing 10% by mass to 14% by mass of manganese, 1% by mass to 3% by mass of nickel, the balance being made of copper and inevitable impurities, and a crystal grain size of 8 μm to 60 μm.   The copper alloy material for a resistance material according to claim 1, wherein the Vickers hardness is 90HV or more and less than 150HV.   A copper alloy material for a resistance material containing 6% by mass to 8% by mass of manganese, 2% by mass to 4% by mass of tin, the balance being made of copper and inevitable impurities, and a crystal grain size of 8 μm to 60 μm.   The copper alloy material for a resistance material according to claim 3, wherein the Vickers hardness is 80HV or more and less than 120HV.   Iron 0.001 mass% to 0.5 mass%, silicon 0.001 mass% to 0.1 mass%, chromium 0.001 mass% to 0.5 mass%, zirconium 0.001 mass% to 0 0.2 mass% or less, titanium 0.001 mass% to 0.2 mass%, silver 0.001 mass% to 0.5 mass%, magnesium 0.001 mass% to 0.5 mass%, cobalt 0 One or two selected from the group consisting of 0.001% by weight to 0.1% by weight, phosphorus 0.001% by weight to 0.1% by weight, and zinc 0.001% by weight to 0.5% by weight The copper alloy material for resistance materials as described in any one of Claims 1-4 which further contains an element more than a seed | species.   6. The copper alloy material for a resistance material according to claim 1, wherein an absolute value of a resistance temperature coefficient in a range of 20 ° C. or more and 50 ° C. or less is 50 ppm / K or less.   The shear ratio measured according to the shear test method for copper and copper alloy thin strips defined in Japan Copper and Brass Association Technical Standard JCBA T310: 2002 is less than 85%. Copper alloy material for resistance materials. A method for producing a copper alloy material for a resistance material according to any one of claims 1 to 7,
A homogenization heat treatment step of subjecting the copper alloy ingot to a heat treatment of 800 ° C. or more and 950 ° C. or less, 10 minutes or more and 10 hours or less;
A hot working step of hot working the ingot homogenized in the homogenizing heat treatment step;
An intermediate cold working step of performing cold working with a working rate of 50% or more on the ingot subjected to hot working in the hot working step;
An intermediate recrystallization annealing step in which the ingot subjected to the cold working in the intermediate cold working step is subjected to a heat treatment of 400 ° C. to 700 ° C. for 10 seconds to 10 hours to perform recrystallization annealing;
A final cold working step of subjecting the ingot subjected to recrystallization annealing in the intermediate recrystallization annealing step to cold working at a working rate of 5% to 80%;
A final recrystallization annealing step in which the ingot subjected to the cold working in the final cold working step is subjected to a heat treatment of 400 ° C. or higher and 700 ° C. or lower for 10 seconds or longer and 10 hours or shorter to perform recrystallization annealing;
The manufacturing method of the copper alloy material for resistance materials provided with.   A resistor comprising at least a part of the copper alloy material for a resistance material according to any one of claims 1 to 7.