TWI703684B - 由晶圓上模組總成而與晶粒整合之超小型模塑模組 - Google Patents

由晶圓上模組總成而與晶粒整合之超小型模塑模組 Download PDF

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TWI703684B
TWI703684B TW105137852A TW105137852A TWI703684B TW I703684 B TWI703684 B TW I703684B TW 105137852 A TW105137852 A TW 105137852A TW 105137852 A TW105137852 A TW 105137852A TW I703684 B TWI703684 B TW I703684B
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die
layer
module
molding
molding layer
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TW105137852A
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TW201733044A (zh
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富田佳宏
艾利克 J. 李
蕭娜 M. 里夫
賈維爾 A. 法爾寇
約書亞 D. 海浦那
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美商英特爾公司
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Abstract

本發明之實施例包括模塑模組及用於形成模塑模組的方法。依據一實施例，模塑模組可整合入一電氣封裝件。依據本發明之實施例的電氣封裝件可包括有一重新分配層形成於至少一個表面上的一晶粒。該模塑模組可安裝至該晶粒。依據一實施例，該模塑模組可包括一模塑層及包封於該模塑層內部的多個組件。自該等組件中之各者的終端可與該模塑層的一表面實質上共面，以便允許該等終端電氣式耦合至該晶粒上的該重新分配層。本發明之額外實施例可包括形成於該模塑層中的一或多個貫穿塑模通孔以提供電力輸送及/或環繞組件的一或多個法拉第籠。

Description

由晶圓上模組總成而與晶粒整合之超小型模塑模組
發明領域 本發明之實施例大致上係有關於半導體裝置的製造。更明確言之，本發明之實施例係有關於包括安裝於一晶粒表面上的模塑模組之半導體封裝及製造此等裝置之方法。
發明背景 為了提供設計上的彈性增加及改進上市時間，封裝技術(例如，系統級封裝(SiP)、單晶片系統(SoC)等)可包括耦合至一積體電路(IC)晶粒的多個分開組件。此等額外組件可安裝至封裝基體，嵌入封裝基體內部，或埋入環繞晶粒形成的模塑層內。舉例言之，組件可埋入環繞於嵌入式晶圓層級球柵陣列(eWLB)或嵌入式面板層級球柵陣列(ePLB)封裝件中的該晶粒形成的模塑層中。於此等封裝件中，額外組件係位在該晶粒的外周邊外側的模塑層內，及自晶粒至組件的電氣連結係形成於模塑層上方的重新分配層(RDL)製成。據此，eWLB及ePLB封裝件要求於X-Y維度的額外表面積以便將組件及晶粒封裝於單一模塑層中。
除了增加將全部組件及晶粒封裝於相同模塑層中的所需面積，模塑層上的RDL製作圖案係受設計法則規定的最小線寬及間隔所限。各自的極限典型地為約5微米或以上。線寬及間隔必須相當大以考慮模塑製程期間出現的不排齊。舉例言之，在晶圓或面板邊緣上的嵌入式組件顯著地大量移動，原因在於模塑流程與熱膨脹係數(CTE)不相匹配。不排齊問題變成甚至更大疑慮，原因在於需要多於一個RDL。多個重新分配層間之不排齊進一步減低了此等封裝件的可信度及良率。
據此，業界需要有封裝技術其允許形成具有小腳印的可靠封裝。
依據本發明之一實施例，係特地提出一種模塑模組，其包含：一模塑層，其具有一第一表面及與該第一表面相對的一第二表面；以及包封於該模塑層內部的多個組件，其中該等組件中之各者包括係與該模塑層之該第一表面實質上共面的終端。
較佳實施例之詳細說明 本文描述者為包括半導體封裝件的系統及形成此等半導體封裝件的方法。於後文描述中，將使用熟諳技藝人士常採用來傳遞其工作的實質給其它熟諳技藝人士的術語描述例示實施例的各種面向。然而，熟諳技藝人士顯然易知，可只使用所描述的面向中之部分而實施本發明。為了解說目的，特定數目、材料及組態經闡明以便徹底瞭解例示實施例。然而，熟諳技藝人士顯然易知，可沒有該等特定細節而實施本發明。於其它情況下，眾所周知的特徵經刪除或簡化以免遮掩了例示實施例。
各種操作將以最有助於瞭解本發明之方式依序地描述為多個分開的操作，然而，描述順序不應解譯為暗示此等操作必然為順序相依性。更明確言之，此等操作無需以呈現的順序進行。
本發明之實施例允許主動及/或被動組件與晶粒整合而不增加封裝件的腳印，同時也允許良率提高。依據本發明之實施例描述的封裝解決方案，藉由利用包括多個主動及/或被動組件的模塑模組而能達成此等效果。替代如前文描述將組件環繞晶粒排列，模塑模組可覆晶安裝至晶粒表面。
此等封裝組態提供數項優點。舉例言之，覆晶安裝模塑模組至晶粒縮小了封裝件的腳印及減少了組件與晶粒間之互連線的長度。此外，RDL可形成於晶粒上而非形成於模塑層上方。比較模塑解決方案諸如eWLB及ePLB結構，其需要RDL於塑模上方，自模塑層上方免除了重新分配層降低成本。替代形成RDL於模塑層上方，使用廉價後端阻罩，即能在晶粒上製作標準化襯墊佈局圖案。將RDL的形成自模塑層移動到晶粒，也發揮了後端製程中可用的細小線寬及間隔設計法則的槓桿效果，因此，可製造更精細間距的互連結構。又復，嵌置組件之後，當模塑層上不再要求光刻術時，良率可以提高。組件的終端維持暴露出，容易經篩檢來確保只有功能性模塑模組被使用於隨後封裝件的組裝。
現在參考圖1A，顯示依據本發明之一實施例模塑模組100之剖面例示圖。模塑模組100可包括嵌置於模塑層110中的多個組件120。該等多個組件120可包括一或多個主動或被動裝置。舉例言之，被動組件120可包括電容器、電阻器、電感器等，及主動組件120可包括電晶體、二極體、電源等。涵括於模塑模組100中的組件120之數目及類型可取決於模塑模組100的期望用途。可使用的組件120之數目及類型有彈性，允許將模塑模組100快速設計與整合成封裝裝置，因而允許有更快的上市時間。
如圖例示，組件120中之各者可包括沿模塑層110的第一表面111設置的終端124。於一實施例中，終端124中之各者可包括與模塑層110的第一表面111實質上共面的表面125。額外實施例可包括堆疊於另一個組件120上方的組件120S 。於此等實施例中，一或多個打線接合126可嵌置於模塑層110，以提供堆疊組件120S 與沿模塑層110的第一表面111形成的襯墊122間之傳導路徑。依據本發明之額外實施例，組件120或120S 中之一或多者也可於模塑層上方延伸(亦即，整個組件可不內嵌於模塑層中)。
如圖例示，終端124及襯墊122係不由重新分配層(RDL)覆蓋。於此實施例中，RDL可被涵括於積體電路晶粒(未顯示於圖1A中)而非模塑層110上。使用模塑模組而沒有RDL形成於接點上方也允許快速檢視組件。舉例言之，可容易篩檢良好單元，及然後，於組裝之前以插座測試篩檢良好次總成。據此，具有缺陷組件的模塑模組100可被阻止涵括於成品封裝件，其產生良率提高。
現在參考圖1B，顯示依據本發明之一實施例包括貫穿模塑層110形成的多個貫穿塑模通孔140的模塑模組101之剖面例示圖。貫穿塑模通孔140提供通過模塑層110的傳導路徑。據此，本發明之實施例可包括貫穿塑模通孔140，其具有與模塑層110之第一表面111實質上共面的第一表面141，及與模塑層110之第二表面112實質上共面的第二表面142。但須瞭解模塑層110的第二表面112可非完全平坦。舉例言之，本發明之實施例也可包括帶有一或多個空腔的表面或梯級表面。因此，依據本發明之若干實施例，模塑層的整個第二表面112無需與貫穿塑模通孔140的第二表面142實質上共面。此種實施例的實例係就圖2C以進一步細節例示及描述如後。
貫穿塑模通孔140的使用提供了數項優點。於一個實施例中，多個貫穿塑模通孔140可使用來形成環繞需與干擾隔離的一或多個組件120之法拉第籠。於該例示實施例中，通孔140係形成於組件120的任一側上，須瞭解於例示剖面視圖中之不可見的平面中，額外貫穿塑模通孔140可環繞組件120形成。此外，貫穿塑模通孔140的使用可允許自積體電路晶粒通過模塑模組101形成連結到封裝基體。於此等實施例中，模塑模組101可包括一或多個貫穿塑模通孔140以產生期望的連結數目。
於圖1B例示的實施例中，貫穿塑模通孔140具有錐形側壁。當使用雷射鑽孔法來界定通孔開口時，可形成錐形側壁。然而，實施例非僅限於具有錐形側壁的貫穿塑模通孔140。舉例言之，接腳及/或通孔桿來替代雷射鑽孔貫穿塑模通孔140。於此等實施例中，側壁可以是實質上垂直。包括接腳或通孔桿的模塑模組及貫穿塑模通孔140的形成方法容後詳述。
現在參考圖1C，顯示依據本發明之一實施例包括電氣式及機械式耦合至晶粒113的模塑模組100之總成103的剖面例示圖。該例示實施例包括實質上類似前文就圖1A描述的模塑模組100之模塑模組100。然而，須瞭解依據本發明之實施例形成的任何模塑模組可安裝至晶粒113。舉例言之，包括貫穿塑模通孔140的模塑模組，諸如圖1B中例示的模塑模組101，也可被安裝至晶粒113。依據一實施例，晶粒113可以是任何主動裝置。舉例言之，晶粒113可以是積體電路(IC)裝置或中介件(例如，單晶片系統(SoC)、天線晶片、感測器、射頻(RF)晶粒等)。
依據一實施例，模塑模組100可直接安裝到具有多個焊料凸塊117的晶粒113。舉例言之，焊料凸塊117可以是受控塌陷晶片連結(C4)凸塊，其也可稱作覆晶連結。依據一實施例，助焊劑118也可形成於焊料凸塊117上方。本發明之實施例可運用有助於在焊料凸塊117與終端124間之可靠電氣連結形成的任何合宜助焊劑118。舉例言之，助焊劑118可以是以環氧樹脂為主的助焊劑等。
因模塑模組100不包括RDL故，RDL 116可形成於晶粒113上方。於晶粒113上方形成RDL 116，可允許RDL 116的傳導線跡及通孔114之路由密度增高，原因在於後端製法中更細小的線寬及間隔可用來製成晶粒113。依據一實施例，傳導線跡及通孔114可形成於一或多個介電層123中，及可將組件120之終端124電氣耦合至位在晶粒113上的襯墊115及焊料凸塊119，及/或耦合至晶粒113內部的任何電路。依據一額外實施例，焊料凸塊117可以各向異性傳導糊劑或膜置換。於此實施例中，來自安裝過程的壓力與熱的組合，許可在終端124與晶粒113之RDL 116上的接點間之各向異性糊劑中形成傳導路徑。
現在參考圖2A，顯示依據本發明之一實施例一封裝件205的剖面例示圖。封裝件205可包括一晶粒213，其係覆晶安裝至封裝基體。依據一實施例，一或多個模塑模組200可電氣耦合至晶粒213。於該例示實施例中，顯示單一模塑模組200，但須瞭解依據額外實施例可使用多於一個模塑模組。於若干實施例中，晶粒213可安裝於中介件252上。中介件252包括一開口255，其形成容納模塑模組200置放於晶粒213與封裝基體250間的一空腔。本發明之實施例可包括空腔填充材料270，其填充未由模塑模組占用的空腔之其餘部分。空腔填充材料270可以是任何合宜的空腔填充材料，諸如環氧樹脂或填料環氧樹脂。
於圖2A例示的實施例中，內嵌於模塑層220中的組件220係例示為具有終端224，其係藉由助焊劑218覆蓋的焊料凸塊217而耦合至晶粒213。須瞭解焊料凸塊217可耦合至晶粒213中的RDL(未顯示於圖中)。晶粒中的重新分配層可實質上類似圖1C中例示的RDL 116層，且可自圖2A中刪除以免不必要地遮掩了圖式。
本發明之實施例也可包括安裝至中介件252的一或多個組件262。組件262可以是任何需要的組件，諸如主動或被動組件。中介件252及封裝件250可包括一或多個路由層(未顯示於圖中)，其電氣耦合焊料凸塊219及263至封裝基體250的相對側上的第二層級互連256。第二層級互連256可以是焊料凸塊等，且可使用來電氣式及機械式耦合封裝件205至基體，諸如主機板等。
現在參考圖2B，顯示依據本發明之一實施例包括形成於晶粒213上的模塑模組200之一封裝件206的剖面例示圖。封裝件206係類似圖2A中例示的封裝件205，但晶粒213係使用導線264打線接合至封裝基體250而非覆晶接合。於此等實施例中，可能無需空腔，原因在於模塑模組200係非位在晶粒213與封裝基體250間之故。因此，可刪除中介件252。
現在參考圖2C，顯示依據本發明之一實施例包括帶有貫穿塑模通孔240的模塑模組200之一封裝件207的剖面例示圖。本發明之實施例包括實質上類似圖2A中例示的封裝件205的封裝件207，但模塑模組200可包括一或多個貫穿塑模通孔240。貫穿塑模通孔240為實質上類似前文就圖1B描述者，因此本文中將不再以進一步細節描述。貫穿塑模通孔240的使用允許自封裝基體250通過模塑模組200連結至晶粒213。此外，封裝基體250中之傳導線及通孔272可電氣式耦合貫穿塑模通孔240到第二層級互連256中之一或多者。於若干實施例中，貫穿塑模通孔240可使用於電力傳輸及/或使用於環繞組件220的一或多個法拉第籠的形成。
圖2C也包括可涵括於本發明之不同實施例中之梯級塑模表面。如圖例示，模塑層的第二表面212可具有梯級或空腔237。梯級或空腔237可於用來形成模塑層210的模塑製程期間形成。於此實施例中，梯級或空腔237可允許一或多個額外組件220被安裝於模塑層下方的封裝基體250上。據此，當使用包括梯級或空腔237的實施例時，可提供安裝組件220所能利用的額外表面積。
現在參考圖3A-3E，顯示依據本發明之一實施例用來形成可被安裝至晶粒的模塑模組之不同處理操作的剖面例示圖。
現在參考圖3A，顯示依據本發明之一實施例在多個組件320安裝於臨時黏著劑392上後之載具基體390的剖面例示圖。本發明之實施例可包括適用於安裝組件320的任何合宜材料的載具基體390。舉例言之，載具基體390可以是不鏽鋼板、有機面板或板、矽、藍寶石、或玻璃晶圓等。增加載具基體390的大小允許以單一處理流程製成更多個模塑模組，因而提高了產出量。組件320可包括一或多個主動或被動裝置。例如，被動組件320可包括電容器、電阻器、電感器等，及主動組件320可包括電晶體、二極體、電源等。安裝至臨時黏著劑392的組件320之數目及類型可取決於模塑模組的期望用途及從該製程將製造多少個模塑模組。
依據一實施例，組件320中之各者可包括終端324，其係安裝至形成於載具基體390上方的臨時黏著劑392。於一實施例中，終端324中之各者可包括置放與黏著劑層392的頂面直接接觸的一表面325。額外實施例可包括堆疊於其它組件320上方的組件320S 。於此等實施例中，終端324可安裝至臨時黏著劑及然後，打線接合326可電氣耦合終端324至堆疊組件320S 。依據一實施例，組件320可使用拾取及置放工具安裝至臨時黏著劑392。拾取及置放工具可撿起個別組件320，或拾取及置放工具可允許實質上同時安裝一陣列的組件320至載具基體上(例如，成套接合)。
現在參考圖3B，顯示依據本發明之一實施例模塑層310形成於組件320及臨時黏著劑392上方之後該載具基體390的剖面例示圖。模塑層310可以是能被使用來包封組件320的任何合宜材料，諸如環氧樹脂、聚矽氧等。於一實施例中，模塑層310可以由二氧化矽、鋁等製成的填料粒子填補。此外，本發明之實施例可以任何合宜方法形成模塑層310，諸如壓縮模製、轉移模製、射出成型、或任何其它合宜包封法。須瞭解模製方法，諸如此等方法能夠以高良率生產，原因在於組件的局部位置移動將相當小，而組件的全局移動將於單顆化處理期間因應，容後詳述。
現在參考圖3C，顯示依據本發明之一實施例臨時黏著劑392及載具基體390被移除後的該模塑層310的剖面例示圖。舉例言之，使用撕離或離層方法模塑層310可自臨時黏著劑392移開。載具基體390及臨時黏著劑392的去除暴露出終端324的表面325。舉例言之，終端324的暴露表面325可實質上與模塑層的第一表面311共面。於若干實施例中，留在終端324的表面325上的殘餘物(例如，來自臨時黏著劑的殘餘物)可以清理製程，諸如電漿蝕刻處理去除。
圖3C也例示貫穿模塑層310形成的虛線398。虛線398界定自相同模塑層310形成的多個模塑模組間之邊界。舉例言之，圖3C中之虛線398例示第一模塑模組300A 與第二及第三模塑模組300B 及300C 間之邊界。據此，虛線398指示模塑層310可被單顆化的位置。須瞭解取決於模塑製程期間可能出現的組件320之全局移動，虛線398的確切位置可以移動。因此，即便組件有全局移動，單顆化處理仍可使用來考慮非期望的移動，且仍然提供具有妥善對齊的終端324之模塑模組300。
依據一實施例，在模塑層310被形成及終端324被暴露之後，組件320可經測試。因無需額外光刻製程來在模塑層310上方形成RDL，故於此點的測試將提供自無功能模塑模組篩檢有功能模塑模組的一種方式。然後，通過篩檢的模塑模組300被使用於隨後封裝件的組裝。據此，組裝妥的封裝件的良率可以提高，原因在於只有有功能模塑模組300將合格通過本處理步驟。於一實施例中，模塑模組300中之各者的組件320可在模塑層被單顆化之前或之後測試。
現在參考圖3D，顯示依據本發明之一實施例該模塑模組300對齊於包括多個晶粒313的晶圓上方的剖面例示圖。因模塑模組300不包括RDL，故RDL 316可形成於晶粒313上。在晶圓切晶粒之前將RDL 316形成於晶粒313上，允許形成晶粒313的後端製程中可利用更細的線寬及間隔設計法則。據此，在晶粒313上形成RDL 316可允許提高RDL 316的傳導線跡及通孔314的路由密度。RDL 316中之傳導線跡及通孔314可電氣耦合組件320的終端324至位在晶粒313上的焊料凸塊319。須瞭解附圖中例示的RDL 316本質上為舉例說明，依據各種實施例可包括任何數目的層、線跡、或通訊，及呈任何期望的樣式。
依據一實施例，模塑模組300可直接安裝至具有多個焊料凸塊317的晶粒313。舉例言之，焊料凸塊317可以是C4凸塊。於該例示實施例中，焊料凸塊317也可包括助焊劑318，諸如環氧樹脂助焊劑。於一實施例中，模塑模組300可藉熱壓接合(TCB)法安裝至晶粒313。依據額外實施例，焊料凸塊317可以各向異性傳導糊劑或膜置換。於此實施例中，來自安裝處理的壓力與熱的組合允許在終端324與晶粒313的RDL 316上的接點間之各向異性傳導糊劑中形成傳導路徑。
現在參考圖3E，顯示依據本發明之一實施例帶有模塑模組300安裝於晶粒313上的單顆化晶粒313的剖面例示圖。於一實施例中，晶圓可以業界已知之切晶粒法切晶粒。在形成帶有模塑模組300的晶粒313之後，本發明之實施例可進一步包括安裝晶片到封裝基體以形成實質上類似前文就圖2A-2C描述的封裝件。
除了就圖3A-3E描述的處理流程之外，本發明之實施例也可包括用於在模塑模組形成傳導貫穿塑模通孔的方法。
現在參考圖4A，顯示依據本發明之一實施例於通孔接腳440安裝至臨時黏著劑492後之基體載具的剖面例示圖。圖4A中例示的視圖為實質上類似圖3A中例示的基體載具390，但只顯示將被使用來形成單一模塑模組的組件。須瞭解載具基體490可支承用來形成多個模塑模組的多個組件420。此外，圖4A中例示之實施例與圖3A中例示之實施例不同，因增加通孔接腳440故。如圖例示，通孔接腳440係形成於組件420的對側上。額外實施例可包括環繞組件420的多個側邊形成多個通孔接腳440以便形成法拉第籠。替代實施例可包括通孔接腳440安裝於沿著載具基體的任何位置。即便當不使用來形成法拉第籠時，一或多個通孔接腳440可使用來在第二層級互連與用於發訊及/或電力線的晶粒間提供直接電氣路徑。
依據一實施例，通孔接腳440可以是能被安裝於臨時黏著劑492上的任何合宜傳導材料。於該例示實施例中，通孔接腳440具有實質上一致寬度。然而，實施例不限於此種組態，及實施例可包括含錐形側壁的通孔接腳440。額外實施例可包括具有襯墊(未顯示於圖中)安裝於頂面及底面上的通孔接腳440(亦即，通孔桿)。依據一實施例，通孔接腳440的高度可實質上類似模塑模組的高度。
現在參考圖4B，顯示依據本發明之一實施例包封組件420及通孔接腳440的一模塑層410的剖面例示圖。於一實施例中，模塑層410可使用任何合宜模塑材料及模塑法製成，諸如前文參考圖3B之描述。依據一實施例，模塑層410可具有實質上類似通孔接腳440的厚度之厚度。當模塑層410的厚度係實質上類似通孔接腳440的高度時，通孔接腳440的第二表面442可與模塑層410的第二表面412實質上共面。本發明之額外實施例可包括具有厚度大於通孔接腳440的高度之模塑層410。於此等實施例中，模塑層的頂面可於形成之後回研磨以便暴露通孔接腳440的第二表面442。
在模塑層410形成有暴露通孔接腳表面442之後，可以前文就如上圖3C-3E描述的實質上相同方式繼續處理，及因而在此不再贅述。
在模塑層形成之後，本發明之替代實施例可形成貫穿塑模通孔。依據此實施例用於形成通孔的方法係例示於圖5A及5B。現在參考圖5A，顯示依據本發明之一實施例形成於載具基體上方的模塑層510的剖面例示圖。模塑層510形成之後，貫穿模塑層510可形成一或多個通孔開口547，及暴露出臨時黏著劑592的表面。於一實施例中，通孔開口可以雷射鑽孔法形成。因雷射鑽孔故，本發明之實施例可包括錐形側壁。
現在參考圖5B，顯示依據本發明之一實施例通孔540形成於通孔開口內之後的模塑模組的剖面例示圖。本發明之實施例可包括填充通孔開口的任何合宜金屬沈積法。舉例言之，通孔開口可以焊料糊劑填補，或可以非電解法或電鍍法鍍覆。於若干實施例中，可在第二表面512上方形成的任何過載可被回研磨，使得通孔540的第二表面542係與模塑層510的第二表面實質上共面。
通孔540貫穿模塑層510形成之後，可以實質上類似前文就如上圖3C-3E描述的相同方式繼續處理，及因而在此不再重複。
於模塑製程期間，本發明之替代實施例可形成通孔開口。依據此實施例形成通孔開口之方法係例示於圖6A-6D。
現在參考圖6A，顯示依據本發明之一實施例用來形成模塑層610的塑模698的剖面例示圖。除了用來在組件上方形成模塑層610的模腔之外，實施例也可包括塑模698，其包括延伸入模塑層610內的突起699。如此，如於圖6B中顯示的剖面例示圖中例示，當模塑層610被形成時，突起698可形成通孔開口646。
於若干實施例中，突起699不會完全延伸貫穿模塑層610。據此，通孔開口646不會完全延伸貫穿模塑層610，及部分模塑層610仍將覆蓋臨時黏著劑692，如圖6C中例示。形成部分貫穿模塑層的通孔開口646，比較雷射鑽孔整個開口，提供了增高的產出量。依據一實施例，產出量可增高的原因在於使用來去除形成於通孔開口646下方的模塑層610其餘部分的雷射鑽孔法，比較否則須形成貫穿模塑層610的整個厚度之開口的雷射製程更快速實施。於替代實施例中，塑模698上的突起699可完全延伸貫穿模塑層610，及以塑模698形成的通孔開口646將暴露出臨時黏著劑692的表面。
現在參考圖6D，顯示依據本發明之一實施例，通孔640形成於通孔開口後的模塑模組的剖面例示圖。本發明之實施例可包括任何合宜金屬沈積法以填充通孔開口。例如，通孔開口可以焊料糊劑填充，或可以非電解法或電鍍法鍍覆。於若干實施例中，可在第二表面612上方形成的任何過載可被回研磨，使得通孔640的第二表面642係與模塑層610的第二表面實質上共面。
通孔640貫穿模塑層610形成之後，可以實質上類似前文就如上圖3C-3E描述的相同方式繼續處理，及因而在此不再重複。
圖5例示依據本發明之一個實施例的一計算裝置500。計算裝置500罩住一板502。板502可包括多個組件，包括但非僅限於處理器504及至少一個通訊晶片506。處理器504係實體式及電氣式耦合至板502。於若干實施例中，至少一個通訊晶片506也係實體式及電氣式耦合至板502。於進一步實施例中，通訊晶片506為處理器504的部件。
取決於其應用，計算裝置500可包括可能或可不實體式及電氣式耦合至板502的其它組件。此等其它組件包括，但非限制性，依電性記憶體(例如，DRAM)、非依電性記憶體(例如，ROM)、快閃記憶體、圖形處理器、數位信號處理器、密碼處理器、晶片組、天線、顯示器、觸控螢幕顯示器、觸控螢幕控制器、電池、音訊編解碼器、視訊編解碼器、功率放大器、全球定位系統(GPS)裝置、羅盤、加速度計、迴轉儀、揚聲器、相機、及大容量儲存裝置(例如，硬碟驅動裝置、光碟(CD)、數位影音碟(DVD)及其類)。
通訊晶片506使得無線通訊能傳輸資料至及自計算裝置500。術語「無線」及其衍生詞可被使用來描述電路、裝置、系統、方法、技術、通訊通道等，其可透過非固體媒體經由調諧電磁輻射的使用而通訊資料。該術語並非暗示相關聯的裝置不含任何導線，但於若干實施例中其可能不含。通訊晶片506可實施多種無線標準或協定中之任一者，包括但非僅限於Wi-Fi(IEEE 802.11家族)、WiMAX(IEEE 802.16家族)、IEEE 802.20、長期演進(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍牙、其衍生協定，以及標示為3G、4G、5G及其後的任何其它無線協定。計算裝置500可包括多個通訊晶片506。例如，第一通訊晶片506可專用於短程無線通訊諸如Wi-Fi及藍牙；及第二通訊晶片506可專用於長程無線通訊諸如GPS、EDGE、GPRS、CDM、WiMAX、LTE、Ev-DO、及其它。
計算裝置500的至少一個處理器504包括封裝於至少一個處理器504內部的積體電路晶粒。於本發明之實施例的若干具體實施中，處理器的積體電路晶粒包括一或多個裝置其係組裝於一封裝件，依據本發明之實施例，該封裝件包括一或多個模塑模組其包括多個組件，該等組件係安裝於帶有RDL形成於晶粒上的一晶粒。術語「處理器」可指處理得自暫存器及/或記憶體的電子資料的任何裝置或裝置部分，用以將該電子資料變換成可儲存於暫存器及/或記憶體中的電子資料。
通訊晶片506也包括封裝於通訊晶片506內部的積體電路晶粒。依據本發明之實施例的另一個具體實施，通訊晶片的積體電路晶粒包括一或多個裝置其係組裝於一封裝件，依據本發明之實施例，該封裝件包括一或多個模塑模組其包括多個組件，該等組件係安裝於帶有RDL形成於晶粒上的一晶粒。
前文本發明之具體實施例的描述，包括於發明摘要中描述者，並非意圖為排它性或限制本發明於所揭示的精準形式。雖然為了例示目的，描述本發明之特定實施例及實例，但如熟諳相關技藝人士將瞭解，於本發明之範圍內各種相當修改皆屬可能。
鑑於前文詳細說明部分可對本發明做出此等修改。於如下申請專利範圍各項中使用的術語不應解譯為將本發明限於說明書及申請專利範圍中揭示的特定實施例。反而，本發明之範圍係全然由如下申請專利範圍決定，其將根據已確立的申請專利範圍解譯原則加以解譯。
本發明之實施例可包括一種模塑模組，其包含：一模塑層具有一第一表面及與該第一表面相對的一第二表面；及包封於該模塑層內部的多個組件，其中該等組件中之各者包括與該模塑層之該第一表面實質上共面的終端。
本發明之額外實施例包括一模塑模組，其進一步包含一或多個貫穿塑模通孔，其中該等貫穿塑模通孔包括一第一表面其係與該模塑層之該第一表面實質上共面及一第二表面其係與該模塑層之該第二表面實質上共面。
本發明之額外實施例包括一模塑模組，其中該等貫穿塑模通孔具有錐形側壁。
本發明之額外實施例包括一模塑模組，其中該等貫穿塑模通孔具有實質上垂直側壁。
本發明之額外實施例包括一模塑模組，其中該等貫穿塑模通孔為傳導接腳或通孔桿。
本發明之額外實施例包括一模塑模組，其中多個貫穿塑模通孔係環繞一或多個組件配置以形成一法拉第籠。
本發明之額外實施例包括一模塑模組，其中該等組件包括主動及/或被動組件。
本發明之額外實施例包括一模塑模組，其進一步包含一或多個堆疊組件其係以一打線接合電氣式耦合至一襯墊。
本發明之額外實施例包括一模塑模組，其中該襯墊具有一表面其係與該模塑層之該第一表面實質上共面。
本發明之實施例包括一種電氣封裝件包含：帶有形成於至少一個表面上的一重新分配層的一晶粒；安裝至該晶粒的一模塑模組，其中該模塑模組包含：一模塑層具有一第一表面及與該第一表面相對的一第二表面；及包封於該模塑層內部的多個組件，其中該等組件中之各者包括與該模塑層之該第一表面實質上共面的終端，及其中該等終端係電氣式耦合至該晶粒上的該重新分配層。
本發明之額外實施例包括一電氣封裝件，其中於該模塑模組中之該等終端係以焊料凸塊電氣式耦合至該晶粒上的該重新分配層。
本發明之額外實施例包括一電氣封裝件，其中於該模塑模組中之該等終端係以一各向異性膜或糊劑電氣式耦合至該晶粒上的該重新分配層。
本發明之額外實施例包括一電氣封裝件，其進一步包含：以第一層級互連耦合至該晶粒的一封裝基體。
本發明之額外實施例包括一電氣封裝件，其中該模塑模組係設置於該晶粒與該封裝基體間。
本發明之額外實施例包括一電氣封裝件，其進一步包含形成於該晶粒與該封裝基體間之一中介件，其中該中介件形成容納該模塑模組的一空腔。
本發明之額外實施例包括一電氣封裝件，其中該等第一層級互連為打線接合。
本發明之額外實施例包括一電氣封裝件，其中該晶粒係設置於該模塑模組與該封裝基體間。
本發明之實施例包括一種形成一模塑模組的方法，其包含：將多個組件安裝至形成於一載具基體上方的一臨時黏著劑上，其中該等組件各自具有終端，其係與該臨時黏著劑接觸；以一模塑層包封該等多個組件；及自該模塑層移除該臨時黏著劑及該載具基體，其中該等終端係經暴露出且係與該模塑層之一第一表面實質上共面。
本發明之額外實施例包括一方法，其進一步包含：單顆化該模塑層以形成多個模塑模組。
本發明之額外實施例包括一方法，其進一步包含：將該等模塑模組中之至少一者安裝至一晶粒，其中該晶粒包括一重新分配層。
本發明之額外實施例包括一方法，其進一步包含：於該模塑層中形成一或多個通孔開口；及將一傳導材料部署於該等一或多個通孔開口中以形成貫穿塑模通孔。
本發明之額外實施例包括一方法，其中該等通孔開口係以一雷射鑽孔法形成。
本發明之額外實施例包括一方法，其進一步包含：將一或多個傳導接腳安裝至該臨時黏著劑上；及將該模塑層形成至暴露出該等傳導接腳的一表面的一厚度。
本發明之額外實施例包括一方法，其中形成該模塑層包括形成一或多個部分通孔開口。
本發明之額外實施例包括一方法，其進一步包含：藉雷射鑽孔在該等部分通孔開口下方的該模塑層部分而於該模塑層中形成一或多個通孔開口；及將一傳導材料部署於該等一或多個通孔開口中以形成貫穿塑模通孔。
100、101、200、300、300A -C‧‧‧模塑模組 103‧‧‧總成 110、210、310、410、510、610‧‧‧模塑層 111、141、311‧‧‧第一表面 112、142、212、412、442、542‧‧‧第二表面 113、213、313‧‧‧晶粒 115、122‧‧‧襯墊 116、316‧‧‧重新分配層(RDL) 117、119、217、219、263、317、319‧‧‧焊料凸塊 118、218、318‧‧‧助焊劑 120、120S、220、220S、262、320、320S、420‧‧‧組件 123‧‧‧介電層 124、224、324‧‧‧終端 125、325‧‧‧表面 126、226、326‧‧‧打線接合 140、240‧‧‧貫穿塑模通孔 205、206、207‧‧‧封裝件 237‧‧‧梯級或空腔 250‧‧‧封裝件基體、封裝件 252‧‧‧中介件 255‧‧‧開口 256‧‧‧第二層級互連 264‧‧‧導線 270‧‧‧空腔填充材料 272‧‧‧傳導線及通孔 314‧‧‧傳導線跡及通孔 390、490‧‧‧載具基體 392、492、592、692‧‧‧臨時性黏著劑、黏著劑層 398‧‧‧虛線 440‧‧‧通孔接腳 540、640‧‧‧通孔 547、646‧‧‧通孔開口 698‧‧‧塑模 699‧‧‧突起 500‧‧‧計算裝置 502‧‧‧板 504‧‧‧處理器 506‧‧‧通訊晶片 700‧‧‧計算裝置 702‧‧‧板 704‧‧‧處理器 706‧‧‧通訊晶片
圖1A為依據本發明之一實施例，一模塑模組的剖面例示圖。
圖1B為依據本發明之一實施例，包括多個貫穿塑模通孔的一模塑模組之剖面例示圖。
圖1C為依據本發明之一實施例，安裝至一晶粒的一模塑模組之剖面例示圖。
圖2A為依據本發明之一實施例，一模塑模組及覆晶安裝至一封裝基體的一晶粒之剖面例示圖。
圖2B為依據本發明之一實施例，一模塑模組及打線接合至一封裝基體的一晶粒之剖面例示圖。
圖2C為依據本發明之一實施例，包括多個貫穿塑模通孔的一模塑模組之剖面例示圖，該等通孔電氣式耦合該晶粒至一封裝基體。
圖3A為依據本發明之一實施例，安裝至載具基體上的臨時黏著劑之多個組件的剖面例示圖。
圖3B為依據本發明之一實施例，模塑層形成於多個組件及臨時黏著劑上方後，圖3A的剖面例示圖。
圖3C為依據本發明之一實施例，模塑層自載具基體上的臨時黏著劑移開後，圖3B的剖面例示圖。
圖3D為依據本發明之一實施例，模塑層切晶粒而形成模塑模組及模塑模組被置放於包括多個積體電路晶粒的晶圓上方後，圖3C的剖面例示圖。
圖3E為依據本發明之一實施例，模塑模組被安裝至晶圓及晶圓被切晶粒後，圖3D的剖面例示圖。
圖4A為依據本發明之一實施例，安裝至載具基體上的臨時黏著劑上之多個組件及多個通孔接腳的剖面例示圖。
圖4B為依據本發明之一實施例，模塑層形成於多個組件、多個通孔接腳、及臨時黏著劑上方後，圖4A的剖面例示圖。
圖5A為依據本發明之一實施例，在多個通孔接腳貫穿模塑層形成後，形成於多個組件上方的模塑層之剖面例示圖。
圖5B為依據本發明之一實施例，在傳導材料沈積入通孔開口內而形成多個通孔後，圖5A的剖面例示圖。
圖6A為依據本發明之一實施例，使用來在多個組件上方形成模塑層的帶有通孔突起的一塑模的剖面例示圖。
圖6B為依據本發明之一實施例，帶有形成入模塑層內的多個部分通孔開口的模塑層形成後，圖6A的剖面例示圖。
圖6C為依據本發明之一實施例，在該等部分通孔開口被完全開啟後，圖6B的剖面例示圖。
圖6D為依據本發明之一實施例，在傳導材料沈積入通孔開口內而形成多個通孔後，圖6C的剖面例示圖。
圖7為依據本發明之一實施例建構的一計算裝置之示意圖。
200‧‧‧模塑模組
205‧‧‧封裝件
210‧‧‧模塑層
212‧‧‧第二表面
213‧‧‧晶粒
217、219、263‧‧‧焊料凸塊
218‧‧‧助焊劑
220、220S、262‧‧‧組件
224‧‧‧終端
226‧‧‧打線接合
250‧‧‧封裝基體
252‧‧‧中介件
255‧‧‧開口
256‧‧‧第二層級互連
270‧‧‧空腔填充材料

Claims (12)

  1. 一種電氣封裝件，其包含：帶有一重新分配層之一晶粒，該重新分配層於該晶粒之至少一表面上；安裝至該晶粒的一模塑模組，其中該模塑模組包含：一模塑層，其具有一第一表面及與該第一表面相對的一第二表面，且其中，該模塑層具有一第一寬度，其小於該晶粒之一第二寬度；以及包封於該模塑層內部的多個組件，其中該等組件中之各者包括係與該模塑層之該第一表面實質上共面的終端，且其中該等終端係電氣式耦合至該晶粒上的該重新分配層。
  2. 如請求項1之電氣封裝件，其中於該模塑模組中之該等終端係以焊料凸塊電氣式耦合至該晶粒上的該重新分配層。
  3. 如請求項1之電氣封裝件，其中於該模塑模組中之該等終端係以一各向異性膜或糊劑電氣式耦合至該晶粒上的該重新分配層。
  4. 如請求項1之電氣封裝件，其進一步包含：以第一層級互連耦合至該晶粒的一封裝基體。
  5. 如請求項4之電氣封裝件，其中該模塑模組係設置於該晶粒與該封裝基體之間。
  6. 如請求項5之電氣封裝件，其進一步包含形成於該晶粒與該封裝基體間之一中介件，其中該中介件 形成容納該模塑模組的一空腔。
  7. 一種形成一電氣封裝件的方法，其包含：將多個組件安裝至形成於一載具基體上方的一臨時黏著劑上，其中該等組件各自具有係與該臨時黏著劑接觸之終端；以一模塑層包封該等多個組件；自該模塑層移除該臨時黏著劑及該載具基體，其中該等終端被暴露且係與該模塑層之一第一表面實質上共面；單顆化該模塑層以形成多個模塑模組；以及將該等模塑模組中之至少一者安裝至一晶粒，其中該晶粒包括一重新分配層，且其中，該等模塑模組中之該至少一者具有一第一寬度，其小於該晶粒之一第二寬度。
  8. 如請求項7之方法，其進一步包含：於該模塑層中形成一或多個通孔開口；以及將一傳導材料部署於該等一或多個通孔開口中以形成貫穿塑模通孔。
  9. 如請求項8之方法，其中該等通孔開口係以一雷射鑽孔法所形成。
  10. 如請求項7之方法，其進一步包含：將一或多個傳導接腳安裝至該臨時黏著劑上；以及將該模塑層形成至暴露該等傳導接腳的一表面之一厚度。
  11. 如請求項7之方法，其中形成該模塑層包括形成一或多個部分通孔開口。
  12. 如請求項11之方法，其進一步包含：藉由將在該等部分通孔開口下方的該模塑層部分雷射鑽孔而於該模塑層中形成一或多個通孔開口；以及將一傳導材料部署於該等一或多個通孔開口中以形成貫穿塑模通孔。
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