TWI703665B - 具有用於將碳污染物與表面氧化物自半導體基板去除的處理腔室之真空平臺 - Google Patents

具有用於將碳污染物與表面氧化物自半導體基板去除的處理腔室之真空平臺 Download PDF

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Publication number
TWI703665B
TWI703665B TW106115538A TW106115538A TWI703665B TW I703665 B TWI703665 B TW I703665B TW 106115538 A TW106115538 A TW 106115538A TW 106115538 A TW106115538 A TW 106115538A TW I703665 B TWI703665 B TW I703665B
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TW
Taiwan
Prior art keywords
chamber
transfer
substrate
transfer chamber
coupled
Prior art date
Application number
TW106115538A
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English (en)
Chinese (zh)
Other versions
TW201801232A (zh
Inventor
建邦 勞
紹芳 諸
Original Assignee
美商應用材料股份有限公司
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Priority claimed from US15/499,100 external-priority patent/US20170350038A1/en
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201801232A publication Critical patent/TW201801232A/zh
Application granted granted Critical
Publication of TWI703665B publication Critical patent/TWI703665B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers

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  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW106115538A 2016-06-03 2017-05-11 具有用於將碳污染物與表面氧化物自半導體基板去除的處理腔室之真空平臺 TWI703665B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201662345160P 2016-06-03 2016-06-03
US62/345,160 2016-06-03
US201762491143P 2017-04-27 2017-04-27
US15/499,100 US20170350038A1 (en) 2016-06-03 2017-04-27 Vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates
US15/499,100 2017-04-27
US62/491,143 2017-04-27

Publications (2)

Publication Number Publication Date
TW201801232A TW201801232A (zh) 2018-01-01
TWI703665B true TWI703665B (zh) 2020-09-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW106115538A TWI703665B (zh) 2016-06-03 2017-05-11 具有用於將碳污染物與表面氧化物自半導體基板去除的處理腔室之真空平臺

Country Status (3)

Country Link
JP (1) JP7190905B2 (https=)
KR (1) KR102196746B1 (https=)
TW (1) TWI703665B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114384B2 (ja) * 2018-07-26 2022-08-08 株式会社アルバック 酸化膜除去方法、および、酸化膜除去装置
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US20240177990A1 (en) * 2022-11-29 2024-05-30 Applied Materials, Inc. Oxidation conformality improvement with in-situ integrated processing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070113868A1 (en) * 2005-11-22 2007-05-24 Applied Materials,Inc. Apparatus and a method for cleaning a dielectric film
US20130337655A1 (en) * 2011-03-01 2013-12-19 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
US20150040822A1 (en) * 2013-08-09 2015-02-12 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
TW201529881A (zh) * 2014-01-05 2015-08-01 Applied Materials Inc 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070020890A1 (en) 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US9593421B2 (en) 2013-11-06 2017-03-14 Applied Materials, Inc. Particle generation suppressor by DC bias modulation
US9508561B2 (en) 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070113868A1 (en) * 2005-11-22 2007-05-24 Applied Materials,Inc. Apparatus and a method for cleaning a dielectric film
US20130337655A1 (en) * 2011-03-01 2013-12-19 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
US20150040822A1 (en) * 2013-08-09 2015-02-12 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
TW201529881A (zh) * 2014-01-05 2015-08-01 Applied Materials Inc 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積

Also Published As

Publication number Publication date
KR102196746B1 (ko) 2020-12-30
TW201801232A (zh) 2018-01-01
JP7190905B2 (ja) 2022-12-16
JP2019517736A (ja) 2019-06-24
KR20190016537A (ko) 2019-02-18

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