JP7190905B2 - 半導体基板から炭素汚染物質及び表面酸化物を除去するための処理チャンバを有する真空プラットフォーム - Google Patents

半導体基板から炭素汚染物質及び表面酸化物を除去するための処理チャンバを有する真空プラットフォーム Download PDF

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JP7190905B2
JP7190905B2 JP2018562373A JP2018562373A JP7190905B2 JP 7190905 B2 JP7190905 B2 JP 7190905B2 JP 2018562373 A JP2018562373 A JP 2018562373A JP 2018562373 A JP2018562373 A JP 2018562373A JP 7190905 B2 JP7190905 B2 JP 7190905B2
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Japan
Prior art keywords
chamber
coupled
transfer
substrate
plasma
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JP2018562373A
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Japanese (ja)
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JP2019517736A5 (https=
JP2019517736A (ja
Inventor
キン ポン ロー，
シューベルト エス． チュー，
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US15/499,100 external-priority patent/US20170350038A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority claimed from PCT/US2017/031590 external-priority patent/WO2017209900A1/en
Publication of JP2019517736A publication Critical patent/JP2019517736A/ja
Publication of JP2019517736A5 publication Critical patent/JP2019517736A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers

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  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2018562373A 2016-06-03 2017-05-08 半導体基板から炭素汚染物質及び表面酸化物を除去するための処理チャンバを有する真空プラットフォーム Active JP7190905B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662345160P 2016-06-03 2016-06-03
US62/345,160 2016-06-03
US201762491143P 2017-04-27 2017-04-27
US15/499,100 US20170350038A1 (en) 2016-06-03 2017-04-27 Vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates
US15/499,100 2017-04-27
US62/491,143 2017-04-27
PCT/US2017/031590 WO2017209900A1 (en) 2016-06-03 2017-05-08 A vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates

Publications (3)

Publication Number Publication Date
JP2019517736A JP2019517736A (ja) 2019-06-24
JP2019517736A5 JP2019517736A5 (https=) 2020-06-18
JP7190905B2 true JP7190905B2 (ja) 2022-12-16

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ID=61725115

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JP2018562373A Active JP7190905B2 (ja) 2016-06-03 2017-05-08 半導体基板から炭素汚染物質及び表面酸化物を除去するための処理チャンバを有する真空プラットフォーム

Country Status (3)

Country Link
JP (1) JP7190905B2 (https=)
KR (1) KR102196746B1 (https=)
TW (1) TWI703665B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114384B2 (ja) * 2018-07-26 2022-08-08 株式会社アルバック 酸化膜除去方法、および、酸化膜除去装置
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US20240177990A1 (en) * 2022-11-29 2024-05-30 Applied Materials, Inc. Oxidation conformality improvement with in-situ integrated processing

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009503818A (ja) 2005-07-19 2009-01-29 アプライド マテリアルズ インコーポレイテッド 半導体処理のための方法および装置
JP2009516920A (ja) 2005-11-22 2009-04-23 アプライド マテリアルズ インコーポレイテッド 誘電体膜を洗浄するための装置及び方法
JP2014511575A (ja) 2011-03-01 2014-05-15 アプライド マテリアルズ インコーポレイテッド デュアルロードロック構成内の除害及びストリップ処理チャンバ
WO2015020792A1 (en) 2013-08-09 2015-02-12 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
WO2015069428A1 (en) 2013-11-06 2015-05-14 Applied Materials, Inc. Particle generation suppressor by dc bias modulation
US20150262869A1 (en) 2014-03-11 2015-09-17 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
TWI643971B (zh) * 2014-01-05 2018-12-11 美商應用材料股份有限公司 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009503818A (ja) 2005-07-19 2009-01-29 アプライド マテリアルズ インコーポレイテッド 半導体処理のための方法および装置
JP2009516920A (ja) 2005-11-22 2009-04-23 アプライド マテリアルズ インコーポレイテッド 誘電体膜を洗浄するための装置及び方法
JP2014511575A (ja) 2011-03-01 2014-05-15 アプライド マテリアルズ インコーポレイテッド デュアルロードロック構成内の除害及びストリップ処理チャンバ
WO2015020792A1 (en) 2013-08-09 2015-02-12 Applied Materials, Inc. Method and apparatus for precleaning a substrate surface prior to epitaxial growth
WO2015069428A1 (en) 2013-11-06 2015-05-14 Applied Materials, Inc. Particle generation suppressor by dc bias modulation
US20150262869A1 (en) 2014-03-11 2015-09-17 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications

Also Published As

Publication number Publication date
KR102196746B1 (ko) 2020-12-30
TW201801232A (zh) 2018-01-01
TWI703665B (zh) 2020-09-01
JP2019517736A (ja) 2019-06-24
KR20190016537A (ko) 2019-02-18

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