KR102196746B1 - 반도체 기판들에서 탄소 오염물질들 및 표면 산화물을 제거하기 위한 프로세스 챔버들을 갖는 진공 플랫폼 - Google Patents

반도체 기판들에서 탄소 오염물질들 및 표면 산화물을 제거하기 위한 프로세스 챔버들을 갖는 진공 플랫폼 Download PDF

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Publication number
KR102196746B1
KR102196746B1 KR1020197000133A KR20197000133A KR102196746B1 KR 102196746 B1 KR102196746 B1 KR 102196746B1 KR 1020197000133 A KR1020197000133 A KR 1020197000133A KR 20197000133 A KR20197000133 A KR 20197000133A KR 102196746 B1 KR102196746 B1 KR 102196746B1
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South Korea
Prior art keywords
chamber
transfer
substrate
coupled
transfer chamber
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English (en)
Korean (ko)
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KR20190016537A (ko
Inventor
킨 퐁 로
슈베르트 에스. 추
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US15/499,100 external-priority patent/US20170350038A1/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Priority claimed from PCT/US2017/031590 external-priority patent/WO2017209900A1/en
Publication of KR20190016537A publication Critical patent/KR20190016537A/ko
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Publication of KR102196746B1 publication Critical patent/KR102196746B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H01L21/02046—
    • H01L21/3065—
    • H01L21/67034—
    • H01L21/67069—
    • H01L21/6719—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers

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  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020197000133A 2016-06-03 2017-05-08 반도체 기판들에서 탄소 오염물질들 및 표면 산화물을 제거하기 위한 프로세스 챔버들을 갖는 진공 플랫폼 Active KR102196746B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662345160P 2016-06-03 2016-06-03
US62/345,160 2016-06-03
US201762491143P 2017-04-27 2017-04-27
US15/499,100 US20170350038A1 (en) 2016-06-03 2017-04-27 Vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates
US15/499,100 2017-04-27
US62/491,143 2017-04-27
PCT/US2017/031590 WO2017209900A1 (en) 2016-06-03 2017-05-08 A vacuum platform with process chambers for removing carbon contaminants and surface oxide from semiconductor substrates

Publications (2)

Publication Number Publication Date
KR20190016537A KR20190016537A (ko) 2019-02-18
KR102196746B1 true KR102196746B1 (ko) 2020-12-30

Family

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KR1020197000133A Active KR102196746B1 (ko) 2016-06-03 2017-05-08 반도체 기판들에서 탄소 오염물질들 및 표면 산화물을 제거하기 위한 프로세스 챔버들을 갖는 진공 플랫폼

Country Status (3)

Country Link
JP (1) JP7190905B2 (https=)
KR (1) KR102196746B1 (https=)
TW (1) TWI703665B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114384B2 (ja) * 2018-07-26 2022-08-08 株式会社アルバック 酸化膜除去方法、および、酸化膜除去装置
US20200411342A1 (en) * 2019-06-27 2020-12-31 Applied Materials, Inc. Beamline architecture with integrated plasma processing
US20240177990A1 (en) * 2022-11-29 2024-05-30 Applied Materials, Inc. Oxidation conformality improvement with in-situ integrated processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070020890A1 (en) 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US7658802B2 (en) 2005-11-22 2010-02-09 Applied Materials, Inc. Apparatus and a method for cleaning a dielectric film
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
KR101895307B1 (ko) * 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
KR102245729B1 (ko) * 2013-08-09 2021-04-28 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 성장 이전에 기판 표면을 사전 세정하기 위한 방법 및 장치
US9593421B2 (en) 2013-11-06 2017-03-14 Applied Materials, Inc. Particle generation suppressor by DC bias modulation
TWI643971B (zh) * 2014-01-05 2018-12-11 美商應用材料股份有限公司 使用空間原子層沉積或脈衝化學氣相沉積之薄膜沉積
US9508561B2 (en) 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications

Also Published As

Publication number Publication date
TW201801232A (zh) 2018-01-01
JP7190905B2 (ja) 2022-12-16
TWI703665B (zh) 2020-09-01
JP2019517736A (ja) 2019-06-24
KR20190016537A (ko) 2019-02-18

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