TWI699148B - Manufacturing method of multilayer wiring board - Google Patents

Manufacturing method of multilayer wiring board Download PDF

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TWI699148B
TWI699148B TW108111453A TW108111453A TWI699148B TW I699148 B TWI699148 B TW I699148B TW 108111453 A TW108111453 A TW 108111453A TW 108111453 A TW108111453 A TW 108111453A TW I699148 B TWI699148 B TW I699148B
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metal foil
wiring layer
layer
thickness
laser
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TW108111453A
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Chinese (zh)
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TW202014076A (en
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溝口美智
吉川和広
清水俊行
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日商三井金屬鑛業股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/429Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107Using laser light

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

提供一種多層配線板的製造方法,即便將電路極薄化時,電路密著性也佳,且能極有效地防止雷射加工造成的該電路的貫通。該多層配線板的製造方法包含:準備具備金屬箔、設於金屬箔上的絕緣層、及設於絕緣層的與金屬箔相反側的面的第1配線層的層積體的工程;對層積體從金屬箔的表面施予雷射加工形成通孔的工程;對層積體的形成通孔之側施予鍍膜及圖案化形成多層配線板的工程;第1配線層的至少與前述金屬箔對向的面,波長10.6μm的雷射的反射率為80%以上,且峰的頂點密度Spd為7000個/mm 2以上15000個/mm 2以下;金屬箔的厚度T 2相對於第1配線層的厚度T 1之比T 2/T 1為0.23以上。 The invention provides a method for manufacturing a multilayer wiring board, which has good circuit adhesion even when the circuit is extremely thin, and can effectively prevent the penetration of the circuit caused by laser processing. The manufacturing method of the multilayer wiring board includes: preparing a laminate including a metal foil, an insulating layer provided on the metal foil, and a first wiring layer provided on the surface of the insulating layer opposite to the metal foil; The process of applying laser processing from the surface of the metal foil to the formation of through holes; the process of applying plating and patterning to the side of the laminate where the through holes are formed to form a multilayer wiring board; the first wiring layer is at least with the aforementioned metal On the opposite side of the foil, the reflectance of the laser with a wavelength of 10.6 μm is over 80%, and the peak apex density Spd is 7000 pieces/mm 2 or more and 15000 pieces/mm 2 or less; the thickness T 2 of the metal foil is relative to the first The ratio T 2 /T 1 of the thickness T 1 of the wiring layer is 0.23 or more.

Description

多層配線板的製造方法Manufacturing method of multilayer wiring board

本發明係有關於多層配線板的製造方法。The present invention relates to a method of manufacturing a multilayer wiring board.

近年,為了提升印刷配線板的實裝密度並小型化,廣泛地進行印刷配線板的多層化。這種多層印刷配線板,在多種攜帶用電子機器中,以輕量化及小型化作為目的被利用。接著,該多層印刷配線板,要求層間絕緣層厚度的更加降低、及作為配線板的更薄型化及輕量化。In recent years, in order to increase the mounting density of printed wiring boards and reduce their size, multilayer printed wiring boards have been widely used. Such multilayer printed wiring boards are used in various portable electronic devices for the purpose of weight reduction and miniaturization. Next, the multilayer printed wiring board is required to further reduce the thickness of the interlayer insulating layer, and to reduce the thickness and weight of the wiring board.

作為滿足這種要求的技術,採用利用無芯積層法的多層印刷配線板的製造方法。無芯積層法為不利用所謂的核芯基板,而將絕緣層與配線層交互層積(積層)而多層化的方法。在無芯積層法,為了使支持體與多層印刷配線板的剝離能容易進行,提案使用附載體金屬箔。例如,專利文獻1(特許第4460013號公報)揭示:在附載體金屬箔的金屬箔側將絕緣層及厚度18μm的金屬層依序層積,加工金屬層形成內層電路(第1導體圖案),在內層電路又將絕緣層及金屬箔再依序層積,將載體剝離而形成在內層電路的兩面側具備金屬箔的基板之後,將基板兩面的金屬箔與內層電路通過孔電連接的配線基板的製造方法。又,專利文獻1也揭示:從基板的兩面進行雷射加工形成各個貫通金屬箔及絕緣層到達內層電路的通孔,對基板兩面的金屬箔以乾薄膜施予圖案化之後,藉由電鍍將通孔鍍膜金屬填充,並將外層電路(導體圖案)形成於基板的兩面。 [先前技術文獻] [專利文獻] As a technology to meet such requirements, a manufacturing method of a multilayer printed wiring board using a coreless build-up method is adopted. The coreless build-up method is a method in which an insulating layer and a wiring layer are alternately stacked (stacked) to form multiple layers without using a so-called core substrate. In the coreless build-up method, in order to facilitate the peeling of the support and the multilayer printed wiring board, it is proposed to use a metal foil with a carrier. For example, Patent Document 1 (Patent No. 4460013) discloses that an insulating layer and a metal layer with a thickness of 18 μm are sequentially laminated on the metal foil side of the metal foil with a carrier, and the metal layer is processed to form an inner layer circuit (first conductor pattern) In the inner layer circuit, the insulating layer and the metal foil are layered in sequence, and the carrier is peeled off to form a substrate with metal foil on both sides of the inner layer circuit, and then the metal foil and the inner layer circuit on both sides of the substrate are electrically connected to each other. Manufacturing method of connected wiring board. In addition, Patent Document 1 also discloses that laser processing is performed on both sides of the substrate to form through holes that penetrate the metal foil and insulating layer to the inner circuit, and the metal foils on both sides of the substrate are patterned with a dry film and then electroplated Fill the through-hole with plating metal, and form outer layer circuits (conductor patterns) on both sides of the substrate. [Prior Technical Literature] [Patent Literature]

[專利文獻1]特許第4460013號公報 [專利文獻2]特許第3142270號公報 [Patent Document 1] Patent No. 4460013 [Patent Document 2] Patent No. 3142270

近年,隨著對多層印刷配線板更加要求的薄型化,用於多層配線板的電路的金屬箔的厚度也跟著降低。關於此點,在記載於專利文獻1的那種配線基板的製造中,也期望使用極薄化的金屬箔。不過,將既存的超薄銅箔(例如厚度6μm以上12μm以下)作為電路(例如內層電路)時,有在形成層間連接用的通孔的工程中,因雷射加工不只是兩面(外層)的金屬箔及絕緣層也貫通到電路而產生孔的問題。例如,專利文獻2(特許第3142270號公報)揭示:關於附內層電路基板,內層電路的厚度未滿外層銅箔的厚度的4.5倍時(換言之外層銅箔的厚度T 2相對於內層電路的厚度T 1之比T 2/T 1未滿1/4.5(=0.22)時),進行雷射照射所致的鑽孔時,會有產生內層電路的損傷等危險。 In recent years, as the thickness of the multilayer printed wiring board has become more demanding, the thickness of the metal foil used in the circuit of the multilayer printed wiring board has also decreased. In this regard, in the production of the wiring board described in Patent Document 1, it is also desirable to use an extremely thin metal foil. However, when an existing ultra-thin copper foil (for example, a thickness of 6 μm or more and 12 μm or less) is used as a circuit (for example, an inner layer circuit), there is a process for forming through holes for interlayer connection, because laser processing is not only on both sides (outer layer) The metal foil and insulating layer also penetrate to the circuit and cause the problem of holes. For example, Patent Document 2 (Patent No. 3142270) discloses that when the thickness of the inner layer circuit is less than 4.5 times the thickness of the outer layer copper foil (in other words, the thickness T 2 of the outer layer copper foil is relative to the inner layer When the ratio T 2 /T 1 of the circuit thickness T 1 is less than 1/4.5 (=0.22)), there is a risk of damage to the inner circuit when drilling holes caused by laser irradiation.

本發明者們現今得到藉由將具備波長10.6μm的雷射的反射率及峰的頂點密度Spd滿足預定條件的特定面的配線層作為電路(例如內層電路)使用而進行多層配線板的製造,即便將電路極薄化時,電路密著性也佳,且能極有效地防止雷射加工造成的該電路的貫通的見解。The present inventors have now obtained the manufacture of multilayer wiring boards by using a wiring layer on a specific surface with a laser with a wavelength of 10.6 μm in reflectance and peak apex density Spd satisfying predetermined conditions as a circuit (for example, an inner layer circuit). , Even when the circuit is extremely thin, the circuit adhesion is good, and it can effectively prevent the penetration of the circuit caused by laser processing.

因此,本發明的目的提供一種多層配線板的製造方法,即便將電路極薄化時,電路密著性也佳,且能極有效地防止雷射加工造成的該電路的貫通。Therefore, the object of the present invention is to provide a method for manufacturing a multilayer wiring board, which has good circuit adhesion even when the circuit is extremely thin, and can extremely effectively prevent the penetration of the circuit caused by laser processing.

根據本發明的一態樣,提供一種多層配線板的製造方法,具備: (a)準備具備金屬箔、設於該金屬箔上的絕緣層、及設於該絕緣層的與前述金屬箔相反側的面的第1配線層的層積體的工程; (b)對前述層積體從前述金屬箔的表面施予雷射加工,形成貫通前述金屬箔及前述絕緣層到達前述第1配線層的通孔的工程; (c)對前述層積體的形成前述通孔之側施予鍍膜及圖案化,形成包含前述第1配線層、及由前述金屬箔而來的第2配線層的多層配線板的工程; 其中, 前述第1配線層的至少與前述金屬箔對向的面,藉由傅立葉轉換紅外分光光度計(FT-IR)測定的波長10.6μm的雷射的反射率為80%以上,且以ISO25178為準據測定的峰的頂點密度Spd為7000個/mm 2以上15000個/mm 2以下; 前述金屬箔的厚度T 2相對於前述第1配線層的厚度T 1之比T 2/T 1為0.23以上。 According to one aspect of the present invention, there is provided a method of manufacturing a multilayer wiring board, comprising: (a) preparing a metal foil, an insulating layer provided on the metal foil, and provided on the insulating layer on the opposite side of the metal foil (B) Applying laser processing to the laminate from the surface of the metal foil to form a laminate that penetrates the metal foil and the insulating layer to reach the first wiring layer Through hole process; (c) Apply plating and patterning to the side of the laminate where the through hole is formed to form a multilayer wiring including the first wiring layer and the second wiring layer from the metal foil The process of the board; wherein, at least the surface of the first wiring layer facing the metal foil has a reflectance of 80% or more of a laser with a wavelength of 10.6 μm as measured by a Fourier transform infrared spectrophotometer (FT-IR) and the vertex of the peak density Spd subject data measured ISO25178 of 7000 / mm 2 or more than 15,000 / mm 2 or less; the thickness T 2 of the metal foil relative to the thickness of the first wiring layer T 1 of the ratio T 2 /T 1 is 0.23 or more.

定義 用來特定本發明的參數的定義如以下所示。 definition The definitions of the parameters used to specify the present invention are as follows.

本說明書中「波長10.6μm的雷射的反射率」指的是藉由傅立葉轉換紅外光度計(FT-IR)測定的將波長10.6μm的雷射照射試料(金屬箔)表面時的相對於被基準板(例如Au蒸鍍反射鏡)反射的光的量的被試料反射的光的量之比例。波長10.6μm的雷射的反射率的測定,能使用市售的傅立葉轉換紅外光度計,依照本說明書的實施例記載的諸條件進行。此外,因為在雷射加工典型使用的二氧化碳雷射的波長為10.6μm,將傅立葉轉換紅外光度計的雷射波長設為10.6μm。In this manual, the "reflectance of a laser with a wavelength of 10.6 μm" refers to the measurement by a Fourier transform infrared photometer (FT-IR) when a laser with a wavelength of 10.6 μm is irradiated on the surface of the sample (metal foil) relative to the surface of the sample (metal foil). The ratio of the amount of light reflected by the reference plate (for example, Au vapor deposition mirror) to the amount of light reflected by the sample. The measurement of the reflectance of the laser with a wavelength of 10.6 μm can be carried out using a commercially available Fourier transform infrared photometer, in accordance with the conditions described in the examples of this specification. In addition, because the wavelength of the carbon dioxide laser typically used in laser processing is 10.6 μm, the laser wavelength of the Fourier transform infrared photometer is set to 10.6 μm.

本說明書中「峰的頂點密度Spd」指的是以ISO25178為準據測定的表示每單位面積的峰頂點之數的參數。該值越大暗示與其他物體的接觸點之數越多。峰的頂點密度Spd能夠藉由將在金屬箔乃至配線層表面的預定測定面積(例如107μm×143μm的區域)的表面輪廓以市售的雷射顯微鏡測定來算出。The "peak apex density Spd" in this specification refers to a parameter representing the number of peak apexes per unit area measured in accordance with ISO25178. The larger the value, the greater the number of contact points with other objects. The peak apex density Spd can be calculated by measuring the surface profile of a predetermined measurement area (for example, an area of 107 μm×143 μm) on the surface of the metal foil or the wiring layer with a commercially available laser microscope.

多層配線板的製造方法 本發明係有關於多層配線板的製造方法。本發明的方法包含:(1)層積體的準備、(2)通孔的形成、及(3)第2配線層的形成的各工程。 Manufacturing method of multilayer wiring board The present invention relates to a method of manufacturing a multilayer wiring board. The method of the present invention includes the steps of (1) preparation of a laminate, (2) formation of via holes, and (3) formation of a second wiring layer.

以下,參照圖1,說明關於工程(1)~(3)的各者。Hereinafter, referring to FIG. 1, each of the processes (1) to (3) will be described.

(1)層積體的準備 準備具備金屬箔10、設於金屬箔10上的絕緣層12、及設於絕緣層12的與金屬箔10相反側的面的第1配線層14的層積體16。該層積體16典型為在上述無芯積層法等的多層配線板的製造方法中,相當於將支持體剝離前的中間製品者。例如,如圖1(i)所示,層積體16為在第1配線層14側(亦即與金屬箔10相反側)的面再層積絕緣層12’的形態也可以。此時,第1配線層14成為埋入絕緣層12及絕緣層12’間成為內層電路。或者,層積體16是在第1配線層14側之面隔介著絕緣層12’再層積乃至形成金屬箔或配線層(圖未示)的形態(例如在兩面具備金屬箔的形態)也可以。又,第1配線層14設於絕緣層12內也可以。無論如何,層積體16至少具備金屬箔10、絕緣層12及第1配線層14即可,關於其他的層構成並沒有特別限定。 (1) Preparation of laminated body A laminate 16 including a metal foil 10, an insulating layer 12 provided on the metal foil 10, and a first wiring layer 14 provided on the surface of the insulating layer 12 opposite to the metal foil 10 is prepared. This laminate 16 is typically one that corresponds to an intermediate product before peeling off the support in the manufacturing method of a multilayer wiring board such as the above-mentioned coreless laminate method. For example, as shown in Fig. 1(i), the laminate 16 may have a form in which an insulating layer 12' is further laminated on the surface of the first wiring layer 14 side (that is, the side opposite to the metal foil 10). At this time, the first wiring layer 14 is buried between the insulating layer 12 and the insulating layer 12' to become an inner layer circuit. Alternatively, the laminate 16 is a form in which a metal foil or a wiring layer (not shown) (not shown) is laminated on the surface of the first wiring layer 14 via an insulating layer 12' (for example, a form in which metal foils are provided on both sides) It is also possible. In addition, the first wiring layer 14 may be provided in the insulating layer 12. In any case, the laminated body 16 should just include at least the metal foil 10, the insulating layer 12, and the 1st wiring layer 14, and it does not specifically limit about other layer structure.

金屬箔10可以是採用於配線層用金屬箔的公知的構成。例如,金屬箔10可以是藉由無電鍍法及電鍍法等濕式等成膜法、濺鍍及化學蒸鍍等乾式成膜法、或組合該等方法形成者。作為金屬箔10之例可以是鋁、銅箔、不銹鋼(SUS)箔、鎳箔等、較佳為銅箔。銅箔不管是壓延銅箔或電解銅箔都可以。The metal foil 10 may be a well-known structure used for metal foil for wiring layers. For example, the metal foil 10 may be formed by wet film formation methods such as electroless plating and electroplating methods, dry film formation methods such as sputtering and chemical vapor deposition, or a combination of these methods. As an example of the metal foil 10, aluminum, copper foil, stainless steel (SUS) foil, nickel foil, etc. are mentioned, Preferably it is copper foil. The copper foil may be rolled copper foil or electrolytic copper foil.

金屬箔10以附載體金屬箔的形態提供也可以。附載體金屬箔典型依序具備載體(圖未示)、剝離層(圖未示)、及金屬箔10。載體為用以將金屬箔10支持並使其處理性提升的箔乃至層。作為載體的較佳例,可以是鋁、銅箔、不銹鋼(SUS)箔、樹脂薄膜、將表面以銅等進行金屬塗佈的樹脂薄膜、樹脂板、玻璃板、及其等的組合。載體的厚度典型為5μm以上250μm以下、較佳為9μm以上200μm以下。又,剝離層只要是使載體的剝離成為可能的層,材質則沒有特別限定。例如,剝離層可以由作為附載體金屬箔的剝離層採用的公知材料構成。剝離層可以是有機剝離層及無機剝離層的任一者、也可以是有機剝離層與無機剝離層的複合剝離層。剝離層的厚度典型為1nm以上1μm以下、較佳為5nm以上500nm以下、更佳為6nm以上100nm以下。金屬箔10以附載體金屬箔的形態提供時,在後述的對金屬箔10的雷射加工前,將載體從層積體16剝離較佳。藉此,在後述的通孔的形成工程中,能從金屬箔10施予雷射加工。The metal foil 10 may be provided in the form of a metal foil with a carrier. The metal foil with a carrier typically includes a carrier (not shown in the figure), a release layer (not shown in the figure), and the metal foil 10 in this order. The carrier is a foil or even a layer for supporting the metal foil 10 and improving its handleability. As preferred examples of the carrier, aluminum, copper foil, stainless steel (SUS) foil, resin film, resin film whose surface is metal-coated with copper or the like, resin plate, glass plate, and combinations thereof can be used. The thickness of the carrier is typically 5 μm or more and 250 μm or less, preferably 9 μm or more and 200 μm or less. In addition, the material of the peeling layer is not particularly limited as long as it enables peeling of the carrier. For example, the peeling layer can be comprised by the well-known material used as the peeling layer of the metal foil with a carrier. The peeling layer may be any one of an organic peeling layer and an inorganic peeling layer, or a composite peeling layer of an organic peeling layer and an inorganic peeling layer. The thickness of the peeling layer is typically 1 nm or more and 1 μm or less, preferably 5 nm or more and 500 nm or less, and more preferably 6 nm or more and 100 nm or less. When the metal foil 10 is provided in the form of a metal foil with a carrier, it is preferable to peel the carrier from the laminate 16 before laser processing of the metal foil 10 described later. This allows laser processing from the metal foil 10 in the process of forming the through hole described later.

層積體16其單面貼附至預浸物等的支持體(圖未示)而附加剛性也可以。預浸物為合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等基材浸於合成樹脂的複合材料之總稱。此時,在支持體的兩面將附載體金屬箔以上下對稱的方式貼附,在得到的附支持體暫層積體的兩面以呈上下對稱的方式形成層積體16,之後將支持體與載體一同除去較佳。例如,在支持體貼附具備金屬箔10的附載體金屬箔,在金屬箔10上依序層積乃至形成絕緣層12及第1配線層14而能成為層積體16。或者,在支持體貼附具備與金屬箔10不同的金屬箔的附載體金屬箔,在該金屬箔上依序層積乃至形成第1配線層14、絕緣層12及金屬箔10而能成為層積體16。藉此,本發明準備的層積體16也可以是先層積乃至形成金屬箔10及第1配線層14的任一者而製作者。The laminated body 16 may be attached to a support such as a prepreg (not shown) on one side to add rigidity. Prepreg is a general term for composite materials in which synthetic resin plates, glass plates, glass woven fabrics, glass non-woven fabrics, and paper are impregnated with synthetic resin. At this time, the metal foil with a carrier is attached symmetrically on both sides of the support, and the laminated body 16 is formed symmetrically on both sides of the temporarily laminated body with the support, and then the support and the It is better to remove the carrier together. For example, a metal foil with a carrier including a metal foil 10 is attached to a support, and the insulating layer 12 and the first wiring layer 14 are sequentially laminated and formed on the metal foil 10 to form a laminate 16. Alternatively, a metal foil with a carrier having a metal foil different from the metal foil 10 is attached to the support, and the first wiring layer 14, the insulating layer 12, and the metal foil 10 are sequentially laminated on the metal foil to form a laminate体16. Thereby, the laminated body 16 prepared by the present invention may be produced by laminating or forming any one of the metal foil 10 and the first wiring layer 14 in advance.

絕緣層12可以是採用於無芯積層法的絕緣層的公知的構成,沒有特別的限定。例如,絕緣層12更佳能藉由將預浸物及樹脂片等絕緣樹脂材料在金屬箔10上層積之後,施予熱間壓印成形而形成。作為含浸於使用的預浸物的絕緣性樹脂較佳的例子,可以是環氧樹脂、氰酸酯樹脂、雙馬來酰亞胺三嗪樹脂(BT樹脂)、聚苯醚樹脂、酚醛樹脂等。又,作為構成樹脂片的絕緣性樹脂較佳的例子,可以是環氧樹脂、聚酰亞胺樹脂、聚酯纖維樹脂等。再來,從對絕緣層12提升絕緣性等的觀點來看,也可以含有由二氧化矽、氧化鋁等各種無機粒子構成的填料粒子等。絕緣層12的厚度雖沒有特別限定,但較佳為1μm以上100 μm以下、更佳為5μm以上40μm以下、再佳為10μm以上30 μm以下。絕緣層12也可以由複數的層構成。此外,如圖1(i)所示,層積體16包含絕緣層12’時,絕緣層12’的構成準用絕緣層12即可,上述絕緣層12的較佳態樣也套用於絕緣層12’。The insulating layer 12 may be a well-known structure employing the insulating layer of the coreless build-up method, and is not particularly limited. For example, the insulating layer 12 is more preferably formed by laminating insulating resin materials such as a prepreg and a resin sheet on the metal foil 10, and then subjecting the insulating resin material to hot stamping. Preferred examples of insulating resin impregnated in the prepreg used include epoxy resin, cyanate ester resin, bismaleimide triazine resin (BT resin), polyphenylene ether resin, phenol resin, etc. . In addition, as a preferable example of the insulating resin constituting the resin sheet, epoxy resin, polyimide resin, polyester fiber resin, and the like can be used. Furthermore, from the viewpoint of improving the insulation of the insulating layer 12, etc., filler particles composed of various inorganic particles such as silica and alumina may also be contained. Although the thickness of the insulating layer 12 is not particularly limited, it is preferably 1 μm or more and 100 μm or less, more preferably 5 μm or more and 40 μm or less, and still more preferably 10 μm or more and 30 μm or less. The insulating layer 12 may be composed of a plurality of layers. In addition, as shown in FIG. 1(i), when the laminate 16 includes an insulating layer 12', the composition of the insulating layer 12' only needs to be the insulating layer 12. The above-mentioned preferred aspect of the insulating layer 12 is also applied to the insulating layer 12. '.

第1配線層14,例如,能藉由在絕緣層12或絕緣層12’上層積第1配線層用金屬箔,在該第1配線層用金屬箔施予圖案化來較佳地形成。或者,第1配線層14藉由在與金屬箔10不同的金屬箔上利用金屬鍍膜等施予圖案化來較佳地形成也可以。第1配線層用金屬箔可以是藉由無電鍍法及電鍍法等濕式等成膜法、濺鍍及化學蒸鍍等乾式成膜法、或組合該等方法形成者。作為第1配線層用金屬箔之例可以是鋁箔、銅箔、不銹鋼(SUS)箔等、較佳為銅箔。銅箔不管是壓延銅箔或電解銅箔都可以。第1配線層用金屬箔的較佳厚度為0.1μm以上12μm以下、更佳為1μm以上9μm以下、再佳為5μm以上7μm以下。若在該範圍內,進行微細電路形成極為適合。用來形成第1配線層14的圖案化藉田減法製程法、MSAP(改良的半加成法(modified-semi-additive process))法、SAP(半加成)法等的公知的手法進行即可,沒有特別限定。在第1配線層14上層積絕緣層12或絕緣層12’時,預先在第1配線層14施序內層處理也可以。內層處理包含CZ處理等粗糙化處理較佳、CZ處理使用有機酸系微蝕刻劑(例如MEC股份公司製,產品號CZ-8101),在第1配線層14表面施予微細粗糙化能更佳地進行。藉此,在第1配線層14表面形成微細凹凸,能夠使與之後層積的絕緣層的密著性提升。The first wiring layer 14 can be preferably formed by, for example, laminating a metal foil for the first wiring layer on the insulating layer 12 or the insulating layer 12', and patterning the metal foil for the first wiring layer. Alternatively, the first wiring layer 14 may be preferably formed by patterning on a metal foil different from the metal foil 10 by metal plating or the like. The metal foil for the first wiring layer may be formed by a wet film forming method such as an electroless plating method and an electroplating method, a dry film forming method such as sputtering and chemical vapor deposition, or a combination of these methods. Examples of the metal foil for the first wiring layer include aluminum foil, copper foil, stainless steel (SUS) foil, etc., and copper foil is preferred. The copper foil may be rolled copper foil or electrolytic copper foil. The preferred thickness of the metal foil for the first wiring layer is 0.1 μm or more and 12 μm or less, more preferably 1 μm or more and 9 μm or less, and still more preferably 5 μm or more and 7 μm or less. If it is within this range, it is extremely suitable for fine circuit formation. The patterning used to form the first wiring layer 14 is performed by well-known methods such as the field subtractive process method, the MSAP (modified-semi-additive process) method, and the SAP (semi-additive) method. However, it is not particularly limited. When the insulating layer 12 or the insulating layer 12' is laminated on the first wiring layer 14, the inner layer treatment may be sequentially performed on the first wiring layer 14 in advance. It is preferable that the inner layer treatment includes roughening treatment such as CZ treatment. The CZ treatment uses an organic acid microetchant (for example, produced by MEC Co., Ltd., product number CZ-8101), and the surface of the first wiring layer 14 is finely roughened. Well done. Thereby, fine irregularities are formed on the surface of the first wiring layer 14, and the adhesion with the insulating layer to be laminated later can be improved.

第1配線層14的至少與金屬箔10對向的面,藉由傅立葉轉換紅外分光光度計(FT-IR)測定的波長10.6 μm的雷射的反射率為80%以上,且以ISO25178為準據測定的峰的頂點密度Spd為7000個/mm 2以上15000個/mm 2以下。藉由將滿足這種條件的配線層作為電路(例如內層電路)使用而進行多層配線板的製造,電路密著性佳,且能極有效地防止雷射加工造成的該電路的貫通。 At least the surface of the first wiring layer 14 facing the metal foil 10 has a reflectance of 80% or more of a laser with a wavelength of 10.6 μm as measured by a Fourier transform infrared spectrophotometer (FT-IR), and is based on ISO25178 The peak apex density Spd measured is 7000/mm 2 or more and 15000/mm 2 or less. By using a wiring layer that satisfies this condition as a circuit (for example, an inner layer circuit) to manufacture a multilayer wiring board, the circuit adhesion is good, and the penetration of the circuit caused by laser processing can be extremely effectively prevented.

亦即,藉由將第1配線層14的與金屬箔10對向的面中藉由傅立葉轉換紅外分光光度計測定的波長10.6 μm的雷射的反射率設為80%以上,能有效地阻礙用於通孔形成的雷射光的吸收。其結果,即便在將第1配線層14超薄化時(亦即使金屬箔10的厚度T 2相對於第1配線層14的厚度T 1之比T 2/T 1大於0.23以上時),也能夠極為有效地防止該第1配線層14的雷射加工造成的貫通。該波長10.6μm的雷射反射率若第1配線層14的表面越平滑則越大。但是,為了增加雷射反射率而單純使第1配線層14的表面平滑時,第1配線層14與絕緣層12的密著性會降低,容易產生電路剝落。因此,兼顧雷射加工造成的電路的貫通防止、與電路密著性不是容易的。關於此點,在本發明中,在第1配線層14的與金屬箔10對向的面,藉由保持有助於波長10.6μm的雷射反射率提升的平滑性,同時將峰的頂點密度Spd設為7000個/mm 2以上15000個/mm 2以下,能夠以多的接點數確保第1配線層14的向絕緣層12的陷入。其結果,在確保高電路密著性的同時,能極有效地防止雷射加工造成的內層電路的貫通。 That is, by setting the reflectance of a 10.6 μm laser with a wavelength of 10.6 μm measured by a Fourier transform infrared spectrophotometer on the surface of the first wiring layer 14 facing the metal foil 10 to 80% or more, it can effectively block Used for the absorption of laser light formed by the through hole. As a result, even when the first wiring layer 14, the ultra-thin (also even if the thickness T 2 of the metal foil 10 with respect to the thickness T of the first wiring layer 14 is a ratio T 2 / T 1 is greater than 0.23 or more), and It is possible to extremely effectively prevent penetration of the first wiring layer 14 by laser processing. The reflectance of the laser with a wavelength of 10.6 μm increases as the surface of the first wiring layer 14 is smoother. However, if the surface of the first wiring layer 14 is simply smoothed in order to increase the laser reflectivity, the adhesion between the first wiring layer 14 and the insulating layer 12 is reduced, and circuit peeling is likely to occur. Therefore, it is not easy to balance prevention of circuit penetration due to laser processing and adhesion to the circuit. In this regard, in the present invention, the surface of the first wiring layer 14 facing the metal foil 10 maintains the smoothness that contributes to the improvement of the laser reflectivity with a wavelength of 10.6 μm, while reducing the peak apex density Spd is set to 7000 pcs/mm 2 or more and 15000 pcs/mm 2 or less, and it is possible to ensure the sinking of the first wiring layer 14 into the insulating layer 12 with a large number of contacts. As a result, while ensuring high circuit adhesion, it is possible to extremely effectively prevent penetration of the inner layer circuit caused by laser processing.

從上述觀點來看,第1配線層14的與金屬箔10對向的面,藉由傅立葉轉換紅外分光光度計(FT-IR)測定的波長10.6μm的雷射的反射率為80%以上、較佳為85%以上、更佳為90%以上、再佳為95%以上。上限值沒有特別的限定,雖可以是100%但典型為98%以下。又,第1配線層14的與金屬箔10對向的面,以ISO25178為準據測定的峰的頂點密度Spd為7000個/mm 2以上15000個/mm 2以下、較佳為10000個/mm 2以上15000個/mm 2以下、更佳為13000 個/mm 2以上15000個/mm 2以下。在上述較佳的範圍內,在更加確保高電路密著性的同時,能極有效地防止雷射加工的第1配線層14的貫通。 From the above point of view, the surface of the first wiring layer 14 facing the metal foil 10 has a reflectance of 80% or more of a laser with a wavelength of 10.6 μm measured by a Fourier transform infrared spectrophotometer (FT-IR). Preferably it is 85% or more, more preferably 90% or more, and even more preferably 95% or more. The upper limit is not particularly limited. Although it may be 100%, it is typically 98% or less. In addition, on the surface of the first wiring layer 14 facing the metal foil 10, the peak apex density Spd measured in accordance with ISO25178 is 7000 pieces/mm 2 or more and 15000 pieces/mm 2 or less, preferably 10,000 pieces/mm 2 or more 15000 pieces/mm 2 or less, more preferably 13000 pieces/mm 2 or more and 15000 pieces/mm 2 or less. Within the above-mentioned preferable range, it is possible to extremely effectively prevent penetration of the laser-processed first wiring layer 14 while further ensuring high circuit adhesion.

第1配線層14的與金屬箔10對向的面中的上述範圍內的波長10.6μm的雷射反射率及峰的頂點密度Spd,讓形成第1配線層14的第1配線層用金屬箔的表面預先具備也可以,或者藉由上述的內層處理(例如CZ處理等的粗糙化處理)在第1配線層14的表面事後賦予也可以。因此,第1配線層14的與金屬箔10對向的面為粗化面較佳。此外,具有滿足上述諸條件的表面的第1配線層用金屬箔,能夠藉由在金屬箔表面以公知乃至所期望的條件施予粗糙化處理來實現。又,選擇性入手具有滿足上述諸條件的表面的市售的金屬箔也可以。On the surface of the first wiring layer 14 facing the metal foil 10, the laser reflectivity of 10.6 μm in the above range and the peak apex density Spd are used to form the metal foil for the first wiring layer 14 The surface may be provided in advance, or may be applied to the surface of the first wiring layer 14 by the above-mentioned inner layer treatment (for example, roughening treatment such as CZ treatment). Therefore, the surface of the first wiring layer 14 facing the metal foil 10 is preferably a roughened surface. In addition, a metal foil for the first wiring layer having a surface that satisfies the above-mentioned conditions can be realized by subjecting the surface of the metal foil to a roughening treatment under known or even desired conditions. In addition, it is also possible to selectively purchase commercially available metal foils having surfaces that satisfy the above-mentioned conditions.

和第1配線層14的與金屬箔10對向的面一樣,第1配線層14的與金屬箔10相反側之面具有上述範圍內的波長10.6μm的雷射的反射率及峰的頂點密度Spd也可以。藉此,在能確保和在第1配線層14的與金屬箔10相反側層積的層(例如絕緣層12’)的高密著性的同時,從層積體16的與金屬箔10相反側的表面施予雷射加工時,也能夠防止第1配線層14的貫通。Like the surface of the first wiring layer 14 facing the metal foil 10, the surface of the first wiring layer 14 opposite to the metal foil 10 has the reflectance and peak apex density of a laser with a wavelength of 10.6 μm in the above range Spd can also. With this, it is possible to ensure high adhesion with the layer (for example, insulating layer 12') laminated on the side opposite to the metal foil 10 of the first wiring layer 14, and at the same time, from the side of the laminated body 16 opposite to the metal foil 10 When laser processing is applied to the surface of, the penetration of the first wiring layer 14 can also be prevented.

金屬箔10的厚度T 2相對於第1配線層14的厚度T 1之比T 2/T 1為0.23以上、較佳為0.25以上、更佳為0.30以上。如同上述,根據本發明,因為由第1配線層14具有難以吸收雷射光的表面,即便以滿足上述範圍的方式將第1配線層14極薄化,也能夠抑制第1配線層14的雷射加工造成的損傷。T 2/T 1較佳為1.0以下、更佳為0.50以下、再佳為0.33以下。 此外,施予雷射加工前對第1配線層14及/或金屬箔10進行表面處理(亦即使第1配線層14及/或金屬箔10的厚度變化)時,上述T 1及T 2分別指該表面處理後的第1配線層14的厚度及金屬箔10的厚度。例如,在第1配線層14施予上述內層處理時,T 1成為內層處理後的第1配線層14的厚度。 The thickness T 2 of the metal foil 10 with respect to the thickness of the first wiring layer 14 is T, a ratio T 2 / T 1 is 0.23 or more, preferably 0.25 or more, more preferably 0.30 or more. As described above, according to the present invention, since the first wiring layer 14 has a surface that is difficult to absorb laser light, even if the first wiring layer 14 is extremely thinned to satisfy the above range, the laser beam of the first wiring layer 14 can be suppressed. Damage caused by processing. T 2 /T 1 is preferably 1.0 or less, more preferably 0.50 or less, and still more preferably 0.33 or less. In addition, when the first wiring layer 14 and/or the metal foil 10 is surface-treated before the laser processing (even if the thickness of the first wiring layer 14 and/or the metal foil 10 changes), the above T 1 and T 2 are respectively It refers to the thickness of the first wiring layer 14 and the thickness of the metal foil 10 after the surface treatment. For example, when the first wiring layer 14 and the inner layer administering process, a thickness T 1 of the first wiring layer 14 of the inner process.

第1配線層14的厚度T 1較佳為2μm以上15μm以下、更佳為3μm以上12μm以下、再佳為5μm以上10μm以下、特佳為5μm以上8μm以下。若在該範圍內,對多層印刷配線板要求的薄型化極為有利。另一方面,金屬箔10的厚度T 2較佳為為0.5μm以上6μm以下、更佳為0.7μm以上4.0 μm以下、再佳為1.2μm以上3.0μm以下、特佳為1.5μm以上2.0μm以下。若在這種範圍內,在後述的通孔形成工程中,從金屬箔10進行直接雷射加工形成通孔18會變得容易。又,金屬箔10用於配線層的形成時,若在上述厚度的範圍內則對微細電路的形成性也佳。 The thickness T 1 of the first wiring layer 14 is preferably 2 μm or more and 15 μm or less, more preferably 3 μm or more and 12 μm or less, still more preferably 5 μm or more and 10 μm or less, particularly preferably 5 μm or more and 8 μm or less. If it is within this range, it is extremely advantageous for the thickness reduction required for a multilayer printed wiring board. On the other hand, the thickness T 2 of the metal foil 10 is preferably 0.5 μm or more and 6 μm or less, more preferably 0.7 μm or more and 4.0 μm or less, still more preferably 1.2 μm or more and 3.0 μm or less, particularly preferably 1.5 μm or more and 2.0 μm or less . If it is within this range, it becomes easy to perform direct laser processing from the metal foil 10 to form the through hole 18 in the through hole forming process described later. In addition, when the metal foil 10 is used for the formation of a wiring layer, if it is within the above-mentioned thickness range, the formability for fine circuits is also good.

(2)通孔的形成 如圖1(ii)所示,藉由對層積體16從金屬箔10的表面施予雷射加工,形成貫通金屬箔10及絕緣層12到達第1配線層14的通孔18。雷射加工雖然可以使用二氧化碳雷射、準分子雷射、UV雷射、YAG雷射等各種雷射,但使用二氧化碳雷射特佳。根據本發明的方法,因為第1配線層14具有難以吸收雷射光的表面,在通孔的形成工程中,能夠極有效地防止雷射加工造成的第1配線層14的貫通。尤其是即便為了使雷射加工有效率地進行而增加雷射的輸出密度時,根據本發明也難以產生第1配線層14的貫通。從該觀點來看,雷射加工中的雷射輸出密度較佳為8MW/cm 2以上14MW/cm 2以下、更佳為8MW/cm 2以上12MW/cm 2以下、再佳為9MW/cm 2以上12MW/cm 2以下。 因此,本發明中的通孔18,利用上述範圍內的輸出密度雷射,以1次射擊的雷射照射形成每1個通孔較佳。 (2) Formation of through holes, as shown in FIG. 1(ii), by applying laser processing to the laminate 16 from the surface of the metal foil 10, the metal foil 10 and the insulating layer 12 are formed to penetrate the first wiring layer 14的通孔18。 Through hole 18. Although various lasers such as carbon dioxide lasers, excimer lasers, UV lasers, and YAG lasers can be used for laser processing, carbon dioxide lasers are particularly preferred. According to the method of the present invention, because the first wiring layer 14 has a surface that is difficult to absorb laser light, the penetration of the first wiring layer 14 caused by laser processing can be extremely effectively prevented in the process of forming the through hole. In particular, even when the output density of the laser is increased in order to perform the laser processing efficiently, it is difficult to cause penetration of the first wiring layer 14 according to the present invention. From this point of view, the laser output density in laser processing is preferably 8MW/cm 2 or more and 14MW/cm 2 or less, more preferably 8MW/cm 2 or more and 12MW/cm 2 or less, and still more preferably 9MW/cm 2 Above 12MW/cm 2 and below. Therefore, in the through hole 18 of the present invention, it is preferable to use the output density laser within the above-mentioned range to form each through hole with one shot of laser irradiation.

通孔18的直徑較佳為30μm以上80μm以下、更佳為30μm以上60μm以下、再佳為30μm以上40μm以下。 若在該範圍內,對多層印刷配線板的高密度化極為有利。又,為了形成具有上述那種小直徑的通孔18,縮小雷射的射束直徑(點徑)較佳。此時,因為雷射的能量容易集中於第1配線層14的雷射照射部分,本來就容易產生第1配線層14的貫通。關於該點,根據本發明的方法,因為第1配線層14具有難以吸收雷射光的表面,即便雷射的能量集中時,也能夠有效地防止第1配線層14的貫通。The diameter of the through hole 18 is preferably 30 μm or more and 80 μm or less, more preferably 30 μm or more and 60 μm or less, and still more preferably 30 μm or more and 40 μm or less. If it is in this range, it is extremely advantageous for the high density of a multilayer printed wiring board. Furthermore, in order to form the through hole 18 having the above-mentioned small diameter, it is preferable to reduce the beam diameter (spot diameter) of the laser. At this time, since the energy of the laser is likely to be concentrated in the laser-irradiated portion of the first wiring layer 14, penetration of the first wiring layer 14 is likely to occur originally. In this regard, according to the method of the present invention, since the first wiring layer 14 has a surface that hardly absorbs laser light, even when the energy of the laser is concentrated, the penetration of the first wiring layer 14 can be effectively prevented.

通孔的形成工程,作為除去在以雷射加工形成通孔時產生的通孔底部的樹脂殘渣(膠渣)的處理,更包含使用鉻酸鹽溶液及過錳酸鹽溶液的至少一者的除膠渣工程較佳。共面性工程為將膨潤處理、鉻酸處理或過錳酸處理、及還原處理這些處理依序進行的處理,能採用公知的濕式製程。作為鉻酸鹽之例可以是鉻酸鉀。作為過錳酸鹽之例,可以是過錳酸鈉、過錳酸鉀等。特別是從除膠渣處理液的環境負荷物質的排出降低、電解再生性等的點來看,使用過錳酸鹽較佳。The process of forming the through hole, as a treatment to remove the resin residue (smear) at the bottom of the through hole generated when the through hole is formed by laser processing, further includes the use of at least one of a chromate solution and a permanganate solution Desmear works better. The coplanarity process is a process in which swelling treatment, chromic acid treatment or permanganic acid treatment, and reduction treatment are sequentially performed, and a known wet process can be used. As an example of chromate, potassium chromate can be used. As an example of permanganate, sodium permanganate, potassium permanganate, etc. can be mentioned. In particular, it is preferable to use permanganate from the viewpoints of reduced discharge of environmentally hazardous substances in the desmear treatment solution and electrolytic regeneration.

(3)第2配線層的形成 如圖1(iii)所示,對層積體16的形成通孔18之側施予鍍膜及圖案化,形成包含第1配線層14、及由金屬箔10而來的第2配線層22的多層配線板24。藉此,在通孔18填充鍍膜金屬,第1配線層14與第2配線層22通過通孔18電連接。第2配線層22典型含有由金屬箔10而來的金屬,但作為僅接續金屬箔10的表面輪廓的新配線層(未包含由金屬箔10而來的金屬)形成也可以。關於第2配線層22的形成方法的工法並沒有特別限定,可以使用減法製程法、MSAP法、SAP法等的公知的手法。在這裡,圖1(iii)為藉由MSAP法進行電路形成者。作為MSAP法的電路形成的一例,首先在金屬箔10的表面將光阻(圖未示)以預定的圖案形成。光阻為感光性薄膜較佳,此時藉由曝光及顯像將預定的配線圖案賦予至光阻即可。接著,在金屬箔10的露出表面(亦即未被光阻層遮蔽的部分)、和通孔18形成電鍍層20。此時,因為在通孔18填充鍍膜金屬,第1配線層14與金屬箔10通過通孔18電連接。電鍍藉由公知的方法進行即可,沒有特別的限定。將光阻層剝離後,藉由將金屬箔10及電鍍層20進行蝕刻加工,能得到形成第2配線層22的多層配線板24。 (3) Formation of the second wiring layer As shown in FIG. 1(iii), plating and patterning are applied to the side of the laminate 16 where the through holes 18 are formed to form a second wiring layer 22 including the first wiring layer 14 and the metal foil 10 Multi-layer wiring board 24. Thereby, the plated metal is filled in the through hole 18, and the first wiring layer 14 and the second wiring layer 22 are electrically connected through the through hole 18. The second wiring layer 22 typically contains metal derived from the metal foil 10, but may be formed as a new wiring layer (not including the metal derived from the metal foil 10) that only connects the surface profile of the metal foil 10. The method of forming the second wiring layer 22 is not particularly limited, and well-known methods such as a subtractive process method, MSAP method, and SAP method can be used. Here, Fig. 1(iii) shows the circuit formation by the MSAP method. As an example of circuit formation by the MSAP method, first, a photoresist (not shown) is formed in a predetermined pattern on the surface of the metal foil 10. The photoresist is preferably a photosensitive film. In this case, a predetermined wiring pattern can be applied to the photoresist by exposure and development. Next, an electroplating layer 20 is formed on the exposed surface of the metal foil 10 (that is, the part not shielded by the photoresist layer) and the through hole 18. At this time, since the through hole 18 is filled with plated metal, the first wiring layer 14 and the metal foil 10 are electrically connected through the through hole 18. The plating may be performed by a known method, and it is not particularly limited. After the photoresist layer is peeled off, the metal foil 10 and the plating layer 20 are etched to obtain the multilayer wiring board 24 on which the second wiring layer 22 is formed.

在多層配線板24上又再形成積層配線層也可以。亦即,藉由在多層配線板24上再將包含絕緣層與配線圖案的配線層交互層積配置,能夠得到形成到第n配線層(n為3以上的整數)為止的多層配線板。該工程的重複到形成所期望的層數的積層配線層為止即可。又,因應必要,在外層面形成焊料光阻、及柱等的實裝用的凸塊等也可以。 [實施例] A build-up wiring layer may be further formed on the multilayer wiring board 24. That is, by alternately laminating wiring layers including insulating layers and wiring patterns on the multilayer wiring board 24, a multilayer wiring board formed up to the nth wiring layer (n is an integer of 3 or more) can be obtained. This process can be repeated until the desired number of build-up wiring layers are formed. In addition, if necessary, bumps for mounting such as solder photoresist and pillars may be formed on the outer layer. [Example]

以下,利用實施例來更進一步說明本發明。Hereinafter, examples are used to further illustrate the present invention.

例1~6 準備6種作為多層配線板的內層電路形成用的金屬箔使用的銅箔,進行各種評價。具體的順序如以下所示。 Examples 1~6 Six types of copper foils used as metal foils for forming inner layer circuits of multilayer wiring boards were prepared, and various evaluations were performed. The specific sequence is as follows.

(1)銅箔的準備 準備6種在至少一面具有表1所示的各參數的厚度9μm的電解銅箔。該等銅箔之中幾種為市售品,其他為基於公知的方法特別製作者。準備的銅箔的各參數的測定乃至算出方法如同以下。 (1) Preparation of copper foil Six types of electrolytic copper foils having a thickness of 9 μm having the parameters shown in Table 1 on at least one side were prepared. Some of these copper foils are commercially available products, and the others are specially produced by known methods. The measurement and calculation methods of the various parameters of the prepared copper foil are as follows.

(FT-IR中的波長10.6μm的雷射的反射率) 使用紅外分光光度計(Thermo Fisher SCIENTIFIC社製、Nicolet Nexus 640 FT-IR Spectrometer),對銅箔表面以下記條件進行測定,取得IR光譜資料。藉由解析取得的IR光譜資料,算出波長10.6μm的雷射的反射率。 <測定條件> ‐測定法:正反射法 ‐背景:Au蒸鍍反射鏡 ‐解析度:4cm -1‐掃描次數:64scan ‐檢出器:DTGS(Deuterium Tri-Glycine Sulfate)檢出器 (Reflectance of a laser with a wavelength of 10.6μm in FT-IR) Using an infrared spectrophotometer (manufactured by Thermo Fisher Scientific, Nicolet Nexus 640 FT-IR Spectrometer), the surface of the copper foil was measured under the following conditions to obtain an IR spectrum data. By analyzing the acquired IR spectrum data, the reflectance of the laser with a wavelength of 10.6μm is calculated. <Measurement conditions> -Measurement method: Specular reflection method -Background: Au vapor-deposited mirror -Resolution: 4cm -1 -Scanning times: 64scan -Detector: DTGS (Deuterium Tri-Glycine Sulfate) detector

(峰的頂點密度Spd) 利用雷射顯微鏡(股份公司基恩斯製,VK-X100),以S濾光器所致的截止波長0.8μm、倍率2000倍(測定面積107μm ×143μm)的條件,以ISO25178為準據測定銅箔表面的峰的頂點密度Spd。 (Peak apex density Spd) Using a laser microscope (manufactured by Keynes Co., Ltd., VK-X100), the cut-off wavelength of the S filter is 0.8μm, and the magnification is 2000 times (measuring area 107μm×143μm), and the surface of copper foil is measured according to ISO25178. The apex density of the peak is Spd.

(2)銅箔的評價 就準備的銅箔將各種特性的評價如同以下進行。 (2) Evaluation of copper foil The various characteristics of the prepared copper foil were evaluated as follows.

<雷射加工性> 如圖2所示,將在上述(1)準備的銅箔作為內層電路形成用的金屬箔使用將雷射加工性評價用層積體如同以下製作,評價雷射加工性。首先,將厚度2μm的銅箔作為金屬箔110準備,在金屬箔110上作為絕緣層112將厚度0.02mm的預浸物(三菱瓦斯化學股份公司製,GHPL-830NSF)層積。接著,將在上述(1)準備的銅箔作為第1配線層用金屬箔113,以具有表1所示的各參數側的面抵接至絕緣層112上的方式層積,以壓力4.0MPa、溫度220℃進行90分鐘的熱間壓印成形得到第1層積體115(圖2(i))。將第1配線層用金屬箔113的表面以微蝕刻液進行1μm蝕刻後,貼附乾薄膜,以預定的圖案進行曝光及顯像,形成蝕刻光阻。將第1配線層用金屬箔113的表面以氯化銅蝕刻液進行處理,從蝕刻光阻間將銅溶解去除後,將蝕刻光阻剝離形成第1配線層114,得到第2層積體116(圖2(ii))。對第1配線層114表面施予粗糙化處理(CZ處理)。粗糙化處理後的第1配線層114的厚度為7μm。之後,在形成第1配線層114的第2層積體116上將厚度0.02mm的預浸物(三菱瓦斯化學股份公司製,GHPL-830NSF)及厚度2μm的銅箔分別作為絕緣層112’及金屬箔110’依序層積,以壓力4.0MPa、溫度220℃進行90分鐘的熱間壓印成形。藉此,得到雷射加工性評價用層積體117(圖2(iii))。此外,金屬箔110的厚度T2(2μm)相對於雷射加工性評價用層積體117的第1配線層114的厚度T1(7μm)之比T2/T1為2/7=約0.29。對得到的雷射加工性評價用層積體117,利用二氧化碳雷射以9.5MW/cm2的輸出密度從金屬箔110側施予雷射加工,形成貫通金屬箔110及絕緣層112到達第1配線層114的直徑65μm的通孔118(圖2(iv))。將該通孔118從金屬箔110側以金屬顯微鏡觀察,判定第1配線層114的貫通的有無。關於各例在88個孔的每個進行通孔118的形成及貫通判定,從通孔118的形成數及第1配線層114的貫通數,算出雷射加工後的第1配線層114的貫通率。 <Laser processability> As shown in Figure 2, the copper foil prepared in (1) above was used as the metal foil for forming the inner layer circuit. The laminate for evaluating the laser processability was produced as follows to evaluate the laser processing Sex. First, a copper foil having a thickness of 2 μm is prepared as the metal foil 110, and a prepreg (manufactured by Mitsubishi Gas Chemical Co., Ltd., GHPL-830NSF) having a thickness of 0.02 mm is laminated as an insulating layer 112 on the metal foil 110. Next, the copper foil prepared in (1) above was used as the metal foil 113 for the first wiring layer, and laminated so that the surface having the parameters shown in Table 1 abutted on the insulating layer 112, and the pressure was 4.0 MPa , The temperature was 220°C for 90 minutes to perform hot press molding to obtain a first laminate 115 (FIG. 2(i)). After the surface of the metal foil 113 for the first wiring layer was etched for 1 μm with a microetching solution, a dry film was attached, and exposed and developed in a predetermined pattern to form an etching resist. The surface of the metal foil 113 for the first wiring layer was treated with a copper chloride etching solution, the copper was dissolved and removed from the etching resist, and the etching resist was peeled off to form the first wiring layer 114 to obtain the second laminate 116 (Figure 2(ii)). The surface of the first wiring layer 114 is roughened (CZ treatment). The thickness of the first wiring layer 114 after the roughening treatment was 7 μm. After that, a prepreg (manufactured by Mitsubishi Gas Chemical Co., Ltd., GHPL-830NSF) with a thickness of 0.02 mm and a copper foil with a thickness of 2 μm are respectively used as insulating layers 112' and The metal foil 110' is laminated in sequence, and is formed by hot-press printing at a pressure of 4.0 MPa and a temperature of 220°C for 90 minutes. Thereby, the laminated body 117 for laser processability evaluation was obtained (FIG. 2(iii)). In addition, the ratio T 2 /T 1 of the thickness T 2 (2 μm) of the metal foil 110 to the thickness T 1 (7 μm) of the first wiring layer 114 of the laser processability evaluation laminate 117 is 2/7=about 0.29. The obtained laminate 117 for evaluating laser processability was laser processed from the metal foil 110 side with a carbon dioxide laser with an output density of 9.5 MW/cm 2 to form a penetrating metal foil 110 and an insulating layer 112 to reach the first The via hole 118 of the wiring layer 114 having a diameter of 65 μm (FIG. 2(iv)). This through hole 118 was observed with a metal microscope from the side of the metal foil 110 to determine the presence or absence of penetration of the first wiring layer 114. For each example, the formation and penetration determination of the through hole 118 were performed for each of the 88 holes. From the number of through holes 118 formed and the penetration number of the first wiring layer 114, the penetration of the first wiring layer 114 after laser processing was calculated rate.

<電路密著性> <Circuit Adhesion>

層積3枚厚度0.1mm的預浸物(三菱瓦斯化學股份公司製,GHPL-830NSF),在層積的預浸物將在上述(1)準備的銅箔,以具有表1所示的各參數側的面抵接的方式層積, 以壓力4.0MPa、溫度220℃進行90分鐘的熱間壓印成形製作覆銅層積板樣本。在該覆銅層積板樣本的兩面貼合乾薄膜,形成蝕刻光阻層。接著,在該兩面的蝕刻光阻層,將0.8mm寬度的剝離強度測定試驗用電路曝光顯像,形成蝕刻圖案。之後,以銅蝕刻液進行電路蝕刻,將蝕刻光阻剝離得到電路。將這樣形成的電路(厚度9μm、電路寬度0.8mm)以JIS C 6481-1996為準據對預浸物表面在90°方向剝離測定剝離強度(kgf/cm)。 Three prepregs (manufactured by Mitsubishi Gas Chemical Co., Ltd., GHPL-830NSF) with a thickness of 0.1mm are laminated, and the laminated prepreg will be prepared on the copper foil prepared in (1) above to have the respective values shown in Table 1. Laminated in such a way that the surfaces on the parameter side abut, A sample of copper clad laminated board was produced by hot press molding at a pressure of 4.0 MPa and a temperature of 220° C. for 90 minutes. A dry film was attached to both sides of the copper clad laminate sample to form an etching photoresist layer. Next, on the etching photoresist layer on both sides, a circuit for a peel strength measurement test with a width of 0.8 mm was exposed and developed to form an etching pattern. After that, the circuit is etched with a copper etching solution, and the etching photoresist is stripped to obtain a circuit. The circuit formed in this way (thickness 9 μm, circuit width 0.8 mm) was peeled off the surface of the prepreg in a 90° direction based on JIS C 6481-1996 to measure the peel strength (kgf/cm).

例7~10 Examples 7~10

取代厚度9μm的電解銅箔,除了使用在至少一面具有表1所示的各參數的厚度7μm的電解銅箔以外,與例1~6同樣進行各種特性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T2/T1為2/5=約0.40。 In place of the electrolytic copper foil having a thickness of 9 μm, an electrolytic copper foil having a thickness of 7 μm having the parameters shown in Table 1 on at least one side was used, and various characteristics were evaluated in the same manner as in Examples 1 to 6. In addition, the thickness of the first wiring layer 114 after the roughening treatment (CZ treatment) of the laminate 117 for laser processability evaluation was 5 μm, and T 2 /T 1 was 2/5=about 0.40.

結果 result

在例1~10中得到的評價結果顯示於表1中。 The evaluation results obtained in Examples 1 to 10 are shown in Table 1.

Figure 02_image001
Figure 02_image001

例11 除了1)取代厚度2μm的銅箔,作為金屬箔110、110’分別使用厚度3μm的銅箔、2)調整蝕刻量將粗糙化處理(CZ處理)後的第1配線層114的厚度設為5μm(亦即將T 2/T 1設為3/5=0.60)、及3)將二氧化碳雷射的輸出密度從9.5MW/cm 2變更成9.75MW/cm 2以外,與例5同樣進行雷射加工性的評價。 Example 11 Except for 1) instead of copper foil with a thickness of 2 μm, a copper foil with a thickness of 3 μm was used as the metal foils 110 and 110', respectively, and 2) the amount of etching was adjusted to set the thickness of the first wiring layer 114 after roughening treatment (CZ treatment) to 5 m (i.e., the T 2 / T 1 is set to 3/5 = 0.60), and 3) the density of the carbon dioxide laser output is changed from 9.5MW / cm 2 to 9.75MW / cm 2, so the same manner as in Example 5 Lei Evaluation of injection processability.

例12 除了1)取代厚度2μm的銅箔,作為金屬箔110、110’分別使用厚度3μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.5MW/cm 2變更成9.75MW/cm 2以外,與例10同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T 2/T 1為3/5=0.60。 Example 12 Except for 1) instead of 2μm thick copper foil, 3μm thick copper foil was used as the metal foils 110 and 110' respectively, and 2) the output density of the carbon dioxide laser was changed from 9.5MW/cm 2 to 9.75MW/cm 2 Other than that, the laser processability was evaluated in the same manner as in Example 10. In addition, the thickness of the first wiring layer 114 after the roughening treatment (CZ treatment) of the laminate 117 for evaluating laser workability was 5 μm, and T 2 /T 1 was 3/5=0.60.

例13 除了1)取代厚度2μm的銅箔,作為金屬箔110、110’分別使用厚度3μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.5MW/cm 2變更成9.75MW/cm 2以外,與例8同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T 2/T 1為3/5=0.60。 Example 13 Except for 1) instead of 2μm thick copper foil, 3μm thick copper foil was used as the metal foils 110 and 110' respectively, and 2) the output density of the carbon dioxide laser was changed from 9.5MW/cm 2 to 9.75MW/cm 2 Other than that, the laser processability was evaluated in the same manner as in Example 8. In addition, the thickness of the first wiring layer 114 after the roughening treatment (CZ treatment) of the laminate 117 for evaluating laser workability was 5 μm, and T 2 /T 1 was 3/5=0.60.

例14 除了1)取代厚度3μm的銅箔,作為金屬箔110、110’分別使用厚度5μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.75MW/cm 2變更成10.25MW/cm 2以外,與例11同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T 2/T 1為5/5=1.0。 Example 14 Except for 1) instead of copper foil with a thickness of 3μm, a copper foil with a thickness of 5μm was used as the metal foils 110 and 110', respectively, and 2) the output density of the carbon dioxide laser was changed from 9.75MW/cm 2 to 10.25MW/cm 2 Except for the above, the laser processability was evaluated in the same manner as in Example 11. In addition, the thickness of the first wiring layer 114 after the roughening treatment (CZ treatment) of the laminated body 117 for evaluating laser workability was 5 μm, and T 2 /T 1 was 5/5=1.0.

例15 除了1)取代厚度3μm的銅箔,作為金屬箔110、110’分別使用厚度5μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.75MW/cm 2變更成10.25MW/cm 2以外,與例12同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T 2/T 1為5/5=1.0。 Example 15 Except for 1) instead of copper foil with a thickness of 3μm, a copper foil with a thickness of 5μm was used as the metal foils 110 and 110', respectively, and 2) the output density of the carbon dioxide laser was changed from 9.75MW/cm 2 to 10.25MW/cm 2 Other than that, the laser processability was evaluated in the same manner as in Example 12. In addition, the thickness of the first wiring layer 114 after the roughening treatment (CZ treatment) of the laminated body 117 for evaluating laser workability was 5 μm, and T 2 /T 1 was 5/5=1.0.

例16 除了1)取代厚度3μm的銅箔,作為金屬箔110、110’分別使用厚度5μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.75MW/cm 2變更成10.25MW/cm 2以外,與例13同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T 2/T 1為5/5=1.0。 Example 16 Except for 1) instead of copper foil with a thickness of 3μm, a copper foil with a thickness of 5μm was used as the metal foils 110 and 110' respectively, and 2) the output density of the carbon dioxide laser was changed from 9.75MW/cm 2 to 10.25MW/cm 2 Other than that, the evaluation of laser processability was performed in the same manner as in Example 13. In addition, the thickness of the first wiring layer 114 after the roughening treatment (CZ treatment) of the laminated body 117 for evaluating laser workability was 5 μm, and T 2 /T 1 was 5/5=1.0.

結果 在例11~16中得到的評價結果顯示於表2中。 result The evaluation results obtained in Examples 11-16 are shown in Table 2.

Figure 02_image003
Figure 02_image003

10:金屬箔 12:絕緣層 14:第1配線層 16:層積體 12’:絕緣層 18:通孔 22:第2配線層 24:多層配線板 110:金屬箔 112:絕緣層 113:第1金屬箔 115:第1層積體 116:第2層積體 112’:絕緣層 110’:金屬箔 118:通孔 114:第1配線層 117:雷射加工性評價用層積體 10: Metal foil 12: Insulation layer 14: The first wiring layer 16: Layered body 12’: Insulation layer 18: Through hole 22: The second wiring layer 24: Multilayer wiring board 110: Metal foil 112: Insulation layer 113: The first metal foil 115: The first layer of integration 116: The second layer of integration 112’: Insulation layer 110’: Metal foil 118: Through hole 114: The first wiring layer 117: Laminated body for evaluating laser processability

[圖1]表示本發明的製造方法的一例中的工程(工程(i)~(iii))的工程流程圖。 [圖2]表示例1~6中的雷射加工性評價用層積體的製作及通孔形成的工程(工程(i)~(iv))的工程流程圖。 [Fig. 1] A process flow chart showing processes (processes (i) to (iii)) in an example of the manufacturing method of the present invention. [Fig. 2] A process flow chart showing the processes (processes (i) to (iv)) of the production of the laminate for laser processability evaluation and the through hole formation in Examples 1 to 6.

10:金屬箔 12:絕緣層 12’:絕緣層 14:第1配線層 16:層積體 18:通孔 20:電鍍層 22:第2配線層 24:多層配線板 10: Metal foil 12: Insulation layer 12’: Insulation layer 14: The first wiring layer 16: Layered body 18: Through hole 20: Electroplating layer 22: The second wiring layer 24: Multilayer wiring board

Claims (7)

一種多層配線板的製造方法,具有: (a)準備具備金屬箔、設於該金屬箔上的絕緣層、及設於該絕緣層的與前述金屬箔相反側的面的第1配線層的層積體的工程; (b)對前述層積體從前述金屬箔的表面施予雷射加工,形成貫通前述金屬箔及前述絕緣層到達前述第1配線層的通孔的工程; (c)對前述層積體的形成前述通孔之側施予鍍膜及圖案化,形成包含前述第1配線層、及由前述金屬箔而來的第2配線層的多層配線板的工程; 其中, 前述第1配線層的至少與前述金屬箔對向的面,藉由傅立葉轉換紅外分光光度計(FT-IR)測定的波長10.6μm的雷射的反射率為80%以上,且以ISO25178為準據測定的峰的頂點密度Spd為7000個/mm 2以上15000個/mm 2以下; 前述金屬箔的厚度T 2相對於前述第1配線層的厚度T 1之比T 2/T 1為0.23以上。 A method of manufacturing a multilayer wiring board, comprising: (a) preparing a layer including a metal foil, an insulating layer provided on the metal foil, and a first wiring layer provided on the surface of the insulating layer opposite to the metal foil (B) The process of applying laser processing to the laminate from the surface of the metal foil to form a through hole that penetrates the metal foil and the insulating layer to the first wiring layer; (c) Right The process of applying plating and patterning on the side of the laminate where the through holes are formed to form a multilayer wiring board including the first wiring layer and the second wiring layer from the metal foil; wherein, the first At least the surface of the wiring layer facing the aforementioned metal foil has a reflectance of more than 80% measured by a Fourier transform infrared spectrophotometer (FT-IR) for a laser with a wavelength of 10.6 μm and measured in accordance with ISO25178 Spd peak apex density of 7000 / mm 2 or more than 15,000 / mm 2 or less; the thickness T 2 of the metal foil relative to the thickness T of the first wiring layer is 1 ratio of T 2 / T 1 is 0.23 or more. 如請求項1記載的方法,其中,前述第1配線層的厚度T 1為2μm以上15μm以下。 The method according to claim 1, wherein the thickness T 1 of the first wiring layer is 2 μm or more and 15 μm or less. 如請求項1或2記載的方法,其中,前述金屬箔的厚度T 2為0.5μm以上6μm以下。 The method according to claim 1 or 2, wherein the thickness T 2 of the metal foil is 0.5 μm or more and 6 μm or less. 如請求項1或2記載的方法,其中,前述T 2/T 1為1.0以下。 The method according to claim 1 or 2, wherein the aforementioned T 2 /T 1 is 1.0 or less. 如請求項1或2記載的方法,其中,前述雷射加工中的雷射輸出密度為8MW/cm 2以上14MW/cm 2以下。 The method according to claim 1 or 2, wherein the laser output density in the aforementioned laser processing is 8 MW/cm 2 or more and 14 MW/cm 2 or less. 如請求項1或2記載的方法,其中,前述通孔的直徑為30μm以上80μm以下。The method according to claim 1 or 2, wherein the diameter of the through hole is 30 μm or more and 80 μm or less. 如請求項1或2記載的方法,其中,前述金屬箔以依序具備載體、剝離層、及前述金屬箔的附載體金屬箔的形態提供,在對前述金屬箔的雷射加工前,將前述載體從前述層積體剝離。The method according to claim 1 or 2, wherein the metal foil is provided in the form of a carrier-attached metal foil having a carrier, a release layer, and the metal foil in this order, and the metal foil is processed before laser processing The carrier is peeled from the aforementioned laminate.
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