TWI599279B - Copper foil for laser processing, copper foil with carrier foil for laser processing, copper clad laminate and method for manufacturing printed wiring board - Google Patents

Copper foil for laser processing, copper foil with carrier foil for laser processing, copper clad laminate and method for manufacturing printed wiring board Download PDF

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Publication number
TWI599279B
TWI599279B TW103107413A TW103107413A TWI599279B TW I599279 B TWI599279 B TW I599279B TW 103107413 A TW103107413 A TW 103107413A TW 103107413 A TW103107413 A TW 103107413A TW I599279 B TWI599279 B TW I599279B
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copper
layer
copper foil
foil
laser
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TW103107413A
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TW201448685A (en
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松田光由
吉川和廣
原保次
藤本宣男
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三井金屬鑛業股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4652Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0038Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/56Electroplating: Baths therefor from solutions of alloys
    • C25D3/58Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0338Layered conductor, e.g. layered metal substrate, layered finish layer, layered thin film adhesion layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0358Resin coated copper [RCC]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/095Conductive through-holes or vias
    • H05K2201/09509Blind vias, i.e. vias having one side closed

Description

雷射加工用銅箔、具有載體箔之雷射加工用銅箔、貼銅積層體以及印刷 配線板之製造方法 Copper foil for laser processing, copper foil for laser processing with carrier foil, copper laminated body, and printing Wiring board manufacturing method

本發明係有關雷射加工用銅箔,尤其是有關適用於印刷配線板之製造材料之雷射加工用銅箔、具有載體箔之雷射加工用銅箔、貼銅積層體及印刷配線板之製造方法。 The present invention relates to a copper foil for laser processing, and more particularly to a copper foil for laser processing suitable for a manufacturing material of a printed wiring board, a copper foil for laser processing having a carrier foil, a copper-clad laminate, and a printed wiring board. Production method.

過去以來,隨著電子設備及電氣設備之高功能化、小型化,已印刷配線板之多層化亦有所進展。多層印刷配線板係透過絕緣層積層3層以上配線層者,係各配線層間藉由通孔或穿孔等之層間連接機構予以電性連接者。至於印刷配線板之製造方法,已知有增層(build up)法。所謂增層法意指在內層電路上介隔絕緣層而積層配線層,邊進行層間連接邊多層化之製造方法。例如,藉由改良半添加法(Modified Semi Additive process,MSAP法)等形成超高精細配線圖案時,係以如下順序,製造增層印刷配線板。首先,於具備內層電路之蕊基板上,介隔絕緣層積層銅箔,藉由雷射加工等形成通孔等,再藉由無電解鍍敷法進行層間連接。接著,於種晶層(銅箔+無電解鍍敷層)上形成對應於配線圖案之鍍敷抗蝕劑,進行電解鍍敷後,藉由蝕刻一起去除鍍敷抗蝕劑與抗蝕劑下方之種晶層。藉由重複必要次數之上述步驟,可獲得具有所需配線層數之 增層多層印刷配線板。 In the past, with the high functionality and miniaturization of electronic equipment and electrical equipment, the multilayering of printed wiring boards has also progressed. The multilayer printed wiring board is formed by laminating three or more wiring layers through an insulating layer, and each of the wiring layers is electrically connected by an interlayer connection mechanism such as a via hole or a via. As for the method of manufacturing a printed wiring board, a build up method is known. The build-up method refers to a manufacturing method in which an edge layer is insulated on an inner layer circuit to laminate a wiring layer, and multilayering is performed while performing interlayer connection. For example, when an ultra-high-fine wiring pattern is formed by a modified semi-additive process (MSAP method) or the like, a build-up printed wiring board is produced in the following order. First, a copper foil is laminated on a core substrate having an inner layer circuit, and a via hole is formed by laser processing or the like, and then interlayer connection is performed by electroless plating. Next, a plating resist corresponding to the wiring pattern is formed on the seed layer (copper foil + electroless plating layer), and after electrolytic plating, the plating resist and the resist are removed together by etching. The seed layer. By repeating the above steps of the necessary number of times, it is possible to obtain the number of wiring layers required. Addition of multilayer printed wiring boards.

近幾年來,隨著配線圖案之微細化,而成為藉由頂端直徑為100 μm以下之微通孔進行層間連接。此等微通孔一般係使用二氧化碳氣體雷射等藉由雷射加工進行開孔加工。此時,大多之情況係採用自銅箔上直接照射二氧化碳氣體雷射,對銅箔及絕緣層同時開孔之Cu直接雷射法。然而,銅由於對二氧化碳氣體雷射等之遠紅外線~紅外線之波長區域的雷射光之吸收率極低,故於藉由Cu直接雷射法形成微通孔時,有必要事先進行黑化處理等之用以提高銅箔表面之雷射光吸收率之前處理。 In recent years, with the miniaturization of the wiring pattern, it has become 100 by the tip diameter. Microvias below μm are connected by layers. These micro-through holes are generally subjected to drilling processing by laser processing using a carbon dioxide gas laser or the like. At this time, in many cases, a Cu direct laser method in which a copper foil is directly irradiated with a carbon dioxide gas laser and a copper foil and an insulating layer are simultaneously opened is used. However, since copper has a very low absorption rate of laser light in the far-infrared-infrared wavelength region such as a carbon dioxide gas laser, it is necessary to perform blackening treatment in advance when a micro-via hole is formed by a Cu direct laser method. It is used to improve the laser light absorption rate of the copper foil surface before processing.

然而,對銅箔表面實施黑化處理時,由於銅箔表面被蝕刻,故 銅箔厚度減小同時於厚度上產生不均。因此,去除種晶層時,有必要對應於種晶層最厚的部分設定蝕刻時點,故難以形成直線性高的良好線寬之配線圖案。 However, when the surface of the copper foil is blackened, since the surface of the copper foil is etched, The thickness of the copper foil is reduced while causing unevenness in thickness. Therefore, when the seed layer is removed, it is necessary to set the etching time point corresponding to the thickest portion of the seed layer, so that it is difficult to form a wiring pattern having a high linearity and a good line width.

另一方面,專利文獻1(日本國專利申請號:特開2001-226796號 公報)中,記載有於銅箔表面設置以Sn及Cu為主體之合金層作為不需要雷射加工時之前處理的技術。依據專利文獻1,於在同樣室溫同樣的表面粗糙度時,與Cu相比較,Sn之雷射吸收率係高2倍以上,故藉由於銅箔表面上表面設置以Sn及Cu為主體之合金層,而可不施以黑化處理等之前處理,對銅箔表面直接照射雷射光,形成直徑100μm之通孔。 On the other hand, Patent Document 1 (Japanese Patent Application No.: JP-A-2001-226796) In the publication, it is described that an alloy layer mainly composed of Sn and Cu is provided on the surface of the copper foil as a technique before the laser processing is not required. According to Patent Document 1, when the same surface roughness is obtained at the same room temperature, the laser absorption ratio of Sn is twice or more higher than that of Cu, so that Sn and Cu are mainly used for the surface of the surface of the copper foil. The alloy layer can be directly irradiated with laser light on the surface of the copper foil without applying a blackening treatment or the like to form a through hole having a diameter of 100 μm.

然而,專利文獻1中所記載之雷射開孔加工用銅箔係採用 於銅箔表面上藉由蒸鍍或電鍍設置金屬Sn層,隨後,利用熱進行擴散處理,藉此在銅箔表面上使Sn與Cu合金化成為合金層的方法。因此,該合金層中,於其厚度方向Sn含量產生分佈,而認為於該銅箔之厚度方向之蝕刻速度會產生偏差。且,該銅箔最表面Sn含量極高,因 此認為專利文獻1所記載之銅箔具有自表層開始依序為Sn層、Sn與Cu之合金層、銅層之3層構成。金屬Sn層由於對於一般銅箔之蝕刻液不具有溶解性,故使用該專利文獻1中記載的銅箔時,最表面難以藉蝕刻而溶解去除。因此,使用專利文獻1中所記載之銅箔時,於蝕刻之際,有必要事先藉由可溶解Sn之金屬Sn層之蝕刻液去除銅箔最表面後,再蝕刻其下層,而使蝕刻步驟煩雜化。再者,專利文獻1中所記載之Sn與Cu的合金層係藉由熱擴散而合金化之層,故認為於厚度方向之金屬組成不均一,於厚度方向之蝕刻速度可能產生偏差。因此,蝕刻之際,無法以均一厚度蝕刻銅箔,而有於銅箔厚度產生偏差之虞。再者,該合金層之表面Sn含量高的情況,認為蝕刻速度亦比藉由電解銅鍍敷所形成之配線圖案部更慢。因此,去除種晶層時,配線圖案部被快速蝕刻,而難以獲得線寬較細之良好配線圖案。 However, the copper foil for laser opening processing described in Patent Document 1 is used. A method of forming a metal Sn layer on the surface of the copper foil by vapor deposition or plating, followed by diffusion treatment by heat, thereby alloying Sn and Cu into an alloy layer on the surface of the copper foil. Therefore, in the alloy layer, the Sn content is distributed in the thickness direction, and it is considered that the etching speed in the thickness direction of the copper foil varies. Moreover, the content of Sn on the outermost surface of the copper foil is extremely high, It is considered that the copper foil described in Patent Document 1 has three layers of a Sn layer, an alloy layer of Sn and Cu, and a copper layer in this order from the surface layer. Since the metal Sn layer does not have solubility in the etching liquid of the general copper foil, when the copper foil described in Patent Document 1 is used, the outermost surface is hardly dissolved and removed by etching. Therefore, when the copper foil described in Patent Document 1 is used, it is necessary to remove the outermost surface of the copper foil by etching the etching solution of the Sn-containing metal Sn layer before etching, and then etching the lower layer to form an etching step. Worry. In addition, the alloy layer of Sn and Cu described in Patent Document 1 is a layer which is alloyed by thermal diffusion, and therefore it is considered that the metal composition in the thickness direction is not uniform, and the etching rate in the thickness direction may vary. Therefore, at the time of etching, the copper foil cannot be etched with a uniform thickness, and there is a variation in the thickness of the copper foil. Further, in the case where the surface Sn content of the alloy layer is high, it is considered that the etching rate is also slower than the wiring pattern portion formed by electrolytic copper plating. Therefore, when the seed layer is removed, the wiring pattern portion is quickly etched, and it is difficult to obtain a good wiring pattern having a fine line width.

因此,本發明之目的係提供一種雷射加工性優異、可良好地形成配線圖案之雷射加工用銅箔、具有載體箔之雷射加工用銅箔、貼銅積層體及印刷配線板之製造方法。 Therefore, an object of the present invention is to provide a copper foil for laser processing which is excellent in laser processability, can form a wiring pattern satisfactorily, a copper foil for laser processing having a carrier foil, a copper-clad laminate, and a printed wiring board. method.

本發明人等經積極研究之結果,發現藉由採用以下之雷射加工用銅箔,可達成上述目的。 As a result of active research by the present inventors, it has been found that the above object can be attained by using the following copper foil for laser processing.

本發明之雷射加工用銅箔,其特徵係於銅箔表面設有可吸收紅外線雷射光之難溶性雷射吸收層,該難溶性雷射吸收層具有對銅蝕刻液之蝕刻性,並且其蝕刻速度比銅箔慢。 The copper foil for laser processing according to the present invention is characterized in that a surface of the copper foil is provided with a poorly soluble laser absorbing layer capable of absorbing infrared laser light, and the poorly soluble laser absorbing layer has etching property to a copper etching liquid, and The etching speed is slower than that of copper foil.

本發明之雷射加工用銅箔中,較好前述難溶性雷射吸收層係錫 含量為25質量%以上且50質量%以下之利用電解鍍敷法形成之電解銅-錫合金層。 In the copper foil for laser processing of the present invention, it is preferred that the poorly soluble laser absorbing layer is tin The electrolytic copper-tin alloy layer formed by electrolytic plating is contained in an amount of 25% by mass or more and 50% by mass or less.

本發明之雷射加工用銅箔中,較好前述難溶性雷射吸收層之厚度為3μm以下。 In the copper foil for laser processing of the present invention, the thickness of the poorly soluble laser absorbing layer is preferably 3 μm or less.

本發明之雷射加工用銅箔中,較好前述銅箔之厚度為7μm以下。 In the copper foil for laser processing of the present invention, the thickness of the copper foil is preferably 7 μm or less.

本發明之雷射加工用銅箔中,較好前述銅箔之另一表面上具有粗化物理層及底塗樹脂層中之至少一層。 In the copper foil for laser processing of the present invention, it is preferred that at least one of the roughened physical layer and the undercoat resin layer is provided on the other surface of the copper foil.

本發明之具有載體箔之雷射加工用銅箔,其特徵係於前述難溶性雷射吸收層上可剝離地具備載體箔。 A copper foil for laser processing having a carrier foil according to the present invention is characterized in that the carrier foil is peelably provided on the poorly soluble laser absorption layer.

本發明之貼銅積層體,其特徵係於前述紅外線雷射光所照射之側以配置前述難溶性雷射吸收層之方式,積層上述雷射加工用銅箔與絕緣層構成材料而成。 The copper-clad laminate according to the present invention is characterized in that a material for forming the copper foil for laser processing and an insulating layer is laminated on the side irradiated with the infrared laser light so as to arrange the poorly-soluble laser absorption layer.

本發明之印刷配線板之製造方法,其特徵係對使具有對銅蝕刻液之蝕刻性並且其蝕刻速度比銅箔慢、而且於銅箔表面具備可吸收紅外線雷射光之雷射吸收層之雷射加工用銅箔與其他導體層透過絕緣層積層而成之積層體,對難溶性雷射吸收層直接照射紅外線雷射光,而形成層間連接用通孔,於去除通孔內之膠渣的去膠渣步驟及/或作為無電解鍍敷之前處理之微蝕刻步驟中,自該銅箔表面去除該難溶性雷射吸收層。 The method for producing a printed wiring board according to the present invention is characterized in that a laser absorbing layer having a etchability to a copper etching solution and having an etching rate slower than that of a copper foil and having a laser absorbing light that absorbs infrared laser light is provided on the surface of the copper foil. a laminated body formed by laminating a copper foil for injection processing and another conductor layer through an insulating layer, and directly irradiating the poorly soluble laser absorbing layer with infrared laser light to form a via hole for interlayer connection, thereby removing the slag in the through hole. The poorly soluble laser absorbing layer is removed from the surface of the copper foil during the slag step and/or as a microetching step prior to electroless plating.

[發明效果] [Effect of the invention]

本發明之雷射加工用銅箔之雷射加工性優異,並且於隨後之蝕刻處理中,於厚度方向可獲得均一的蝕刻速度。而且,可使用二氧化碳氣體雷 射進行貼銅積層板的雷射加工用銅箔的直接開孔加工,而不需要為了提高雷射光吸收效率的黑化處理等之前處理,因可削減步驟而可削減總體製造成本。再者,難溶性雷射吸收層可作為蝕刻抗蝕劑發揮功能,故可防止於配線圖案形成前之各種蝕刻步驟中銅箔(層)表面溶解、可防止銅箔(層)厚度產生偏差。因此,可以良好蝕刻因子形成配線圖案。 The copper foil for laser processing of the present invention is excellent in laser workability, and a uniform etching rate can be obtained in the thickness direction in the subsequent etching treatment. Moreover, carbon dioxide gas can be used The direct boring process of the copper foil for laser processing for depositing a copper laminated plate is performed without pre-processing such as blackening treatment for improving the laser light absorbing efficiency, and the overall manufacturing cost can be reduced by reducing the number of steps. Further, since the poorly-soluble laser absorption layer functions as an etching resist, it is possible to prevent the surface of the copper foil (layer) from being dissolved in various etching steps before the formation of the wiring pattern, and to prevent variations in the thickness of the copper foil (layer). Therefore, the wiring pattern can be formed with a good etching factor.

10‧‧‧雷射加工用銅箔 10‧‧‧Rolling copper foil for processing

11‧‧‧底塗樹脂層 11‧‧‧ Primer resin layer

12‧‧‧銅箔(電解銅箔層) 12‧‧‧ copper foil (electrolytic copper foil layer)

13‧‧‧電解銅-錫合金層(難溶性雷射吸收層) 13‧‧‧ Electrolytic copper-tin alloy layer (poorly soluble laser absorbing layer)

20‧‧‧絕緣層構成材料 20‧‧‧Insulation layer forming materials

30‧‧‧內層電路(其他導體層) 30‧‧‧Inner circuit (other conductor layers)

30a‧‧‧導體圖案部 30a‧‧‧Conductor Pattern Department

40‧‧‧微通孔 40‧‧‧microvia

100‧‧‧積層體 100‧‧‧Layer

圖1係表示本發明之電解金屬箔的錫含量與蝕刻速度關係的圖。 Fig. 1 is a graph showing the relationship between the tin content of the electrolytic metal foil of the present invention and the etching rate.

圖2係用以說明本發明之印刷配線板之製造方法一例之圖。 Fig. 2 is a view for explaining an example of a method of manufacturing a printed wiring board of the present invention.

圖3係用以評價實施例及比較例1所製作之貼銅積層板中之電解銅箔之蝕刻性的圖。 Fig. 3 is a view for evaluating the etching properties of the electrolytic copper foil in the copper-clad laminate produced in the examples and the comparative example 1.

以下,依序說明本發明之雷射加工用銅箔、具有載體箔之雷射加工用銅箔、貼銅積層板及印刷配線板之製造方法之實施形態。 Hereinafter, an embodiment of a method for producing a copper foil for laser processing, a copper foil for laser processing having a carrier foil, a copper-clad laminate, and a printed wiring board according to the present invention will be described in order.

1.雷射加工用銅箔 1. Copper foil for laser processing

本發明之雷射加工用銅箔,其特徵係於銅箔表面設有可吸收紅外線雷射光之難溶性雷射吸收層,該難溶性雷射吸收層具有對銅蝕刻液之蝕刻性,並且其蝕刻速度比銅箔慢。本發明之雷射加工用銅箔係於印刷配線板之製造步驟中,藉由Cu直接雷射法,可不施以黑化處理等之前處理,而對雷射加工用銅箔表面直接照射雷射光,可藉由雷射加工形成微通孔等之微細孔者。 The copper foil for laser processing according to the present invention is characterized in that a surface of the copper foil is provided with a poorly soluble laser absorbing layer capable of absorbing infrared laser light, and the poorly soluble laser absorbing layer has etching property to a copper etching liquid, and The etching speed is slower than that of copper foil. The copper foil for laser processing according to the present invention is in the manufacturing step of the printed wiring board, and the surface of the copper foil for laser processing is directly irradiated with the laser light by the Cu direct laser method without the prior treatment such as blackening treatment. It is possible to form micropores such as microvias by laser processing.

此處,該難溶性雷射吸收層係例如具有對紅外線雷射光之吸收性之包含紅外線雷射吸收性金屬材料之銅層,較好為藉由於銅層內含有該紅外線吸收性材料,而可使對於銅蝕刻液之蝕刻速度比銅箔之蝕刻速度更慢的包含紅外線雷射吸收性金屬材料之銅層。該難溶性雷射吸收層之具體例可舉例為例 如藉由電解鍍敷法形成之含有25質量%以上且50質量%以下錫之電解銅-錫合金層。本實施形態中,主要以使用該電解銅-錫合金層者作為難溶性雷射吸收層說明如下。 Here, the poorly soluble laser absorbing layer is, for example, a copper layer containing an infrared laser absorbing metal material which absorbs infrared laser light, and preferably contains the infrared absorbing material in the copper layer. A copper layer comprising an infrared laser absorptive metal material that etches the copper etching solution at a slower rate than the etching rate of the copper foil. A specific example of the poorly soluble laser absorbing layer can be exemplified as an example. An electrolytic copper-tin alloy layer containing 25% by mass or more and 50% by mass or less of tin, which is formed by electrolytic plating. In the present embodiment, the use of the electrolytic copper-tin alloy layer as a poorly soluble laser absorbing layer will be mainly described below.

1-1.電解銅-錫合金層 1-1. Electrolytic copper-tin alloy layer

首先,針對電解銅-錫合金層加以說明。與銅進行比較時,錫對 於具有遠紅外線~紅外線波長區域之波長的雷射光(二氧化碳氣體雷射)之吸收率高。亦即,該電解銅-錫合金層可作為雷射光吸收層而發揮功能,如上述,於藉由Cu直接雷射法進行開孔加工時不需要前處理。且,本發明中,電解銅-錫合金層於開孔加工後,在配線圖案形成前所進行之去膠渣步驟或微蝕刻步驟等所進行之各種蝕刻處理中,可發揮用以防止銅箔表面被蝕刻之蝕刻抗蝕劑層之功能。該電解銅-錫合金在該等配線圖案形成前所進行之各種蝕刻處理中會被蝕刻。然而,使該電解銅-錫合金層溶解去除之時點可藉由其錫含量及厚度加以控制。因此,用於層間連接之無電解鍍敷步驟之前階段之前之間,亦可不使銅箔表面溶解,而僅溶解去除電解銅-錫合金層。因此,例如藉由MSAP法形成配線圖案時,可於維持最初厚度狀態之銅箔上形成無電解鍍敷被膜,可獲得均一厚度的種晶層。 First, the electrolytic copper-tin alloy layer will be described. When compared with copper, tin pairs The absorption of laser light (carbon dioxide gas laser) having a wavelength in the far-infrared to infrared wavelength region is high. That is, the electrolytic copper-tin alloy layer functions as a laser light absorbing layer, and as described above, no pretreatment is required for the hole drilling by the Cu direct laser method. Further, in the present invention, the electrolytic copper-tin alloy layer can be used to prevent copper foil in various etching treatments performed after the opening process, such as the desmear step or the micro-etching step performed before the formation of the wiring pattern. The surface is etched to etch the function of the resist layer. The electrolytic copper-tin alloy is etched in various etching processes performed before the formation of the wiring patterns. However, the point at which the electrolytic copper-tin alloy layer is dissolved and removed can be controlled by its tin content and thickness. Therefore, the electrolytic copper-tin alloy layer can be dissolved and removed only before the stage before the electroless plating step for interlayer connection, without dissolving the surface of the copper foil. Therefore, for example, when the wiring pattern is formed by the MSAP method, an electroless plating film can be formed on the copper foil which maintains the initial thickness state, and a seed layer having a uniform thickness can be obtained.

(1)錫含量 (1) tin content

本發明中,使用電解銅-錫合金層作為難溶性雷射吸收層時,該 電解銅-錫合金層中之錫含量設為25質量%以上之理由係因能發揮作為上述蝕刻抗蝕劑之功能之故。如圖1所示,電解銅-錫合金層中之錫含量未達25質量%時,電解銅-錫合金層之蝕刻速度與錫含量為0質量%之電解銅箔相較較為快速。另一方面,電解銅-錫合金層中之錫含量處於25質量%以上時,其蝕刻速度 比不含錫之通常電解銅箔更慢。因此,藉由將電解銅-錫合金層中之錫含量設為25質量%以上,如上述,電解銅-錫合金層可作為蝕刻抗蝕劑發揮功能,於上述配線圖案形成前所進行之各種蝕刻處理之際,可防止銅溶解而銅箔厚度產生偏差。 In the present invention, when an electrolytic copper-tin alloy layer is used as the poorly soluble laser absorbing layer, The reason why the tin content in the electrolytic copper-tin alloy layer is 25% by mass or more is because the function as the etching resist can be exhibited. As shown in Fig. 1, when the tin content in the electrolytic copper-tin alloy layer is less than 25% by mass, the etching rate of the electrolytic copper-tin alloy layer is faster than that of the electrolytic copper foil having a tin content of 0% by mass. On the other hand, when the tin content in the electrolytic copper-tin alloy layer is 25% by mass or more, the etching rate thereof It is slower than the usual electrolytic copper foil without tin. Therefore, by setting the tin content in the electrolytic copper-tin alloy layer to 25% by mass or more, as described above, the electrolytic copper-tin alloy layer can function as an etching resist, and various types of the wiring pattern can be formed before the formation of the wiring pattern. At the time of the etching treatment, it is possible to prevent copper from being dissolved and the thickness of the copper foil is deviated.

且,電解銅-錫合金層由於係由可藉由電解鍍敷法於銅箔表面析 出之銅錫合金所構成,故於厚度方向之金屬組成均一,可使該電解銅-錫合金層之蝕刻速度於厚度方向均一。因此,上述配線圖案形成前所進行之各種蝕刻處理中,電解銅-錫合金層於厚度方向可以均一速度溶解。如圖1所示,錫含量越多蝕刻速度越慢。因此,如上述,藉由調整該電解銅-錫合金層中之錫含量及厚度,可於適當時點溶解去除電解銅-錫合金層。因此,例如用於層間連接之電解鍍敷步驟前,若僅溶解電解銅-錫合金層,則可於維持了最初厚度狀態的銅箔表面上形成無電解鍍敷被膜。因此,例如於藉由MSAP法形成配線圖案時,可形成均一厚度之種晶層,故於配線圖案形成後之快速蝕刻步驟等中去除種晶層之際,由於種晶層於厚度方向具有均一組成,故可藉均一蝕刻速度溶解去除種晶層。由以上可知,可形成蝕刻因子良好之配線圖案。又,不限於MSAP法,藉由包含減去法(subtractive process)等之蝕刻步驟的方法形成配線圖案時亦同樣可行。亦即,於雷射開孔加工後之去膠渣步驟中,由於可去除電解銅-錫合金層,使維持了最初厚度狀態之銅箔(層)露出,故可獲得均一厚度之導體層,可形成蝕刻因子良好之配線圖案。 Moreover, the electrolytic copper-tin alloy layer is deposited on the surface of the copper foil by electrolytic plating. Since the copper-tin alloy is formed, the metal composition in the thickness direction is uniform, and the etching rate of the electrolytic copper-tin alloy layer can be made uniform in the thickness direction. Therefore, in the various etching processes performed before the formation of the wiring pattern, the electrolytic copper-tin alloy layer can be dissolved at a uniform rate in the thickness direction. As shown in FIG. 1, the more the tin content, the slower the etching rate. Therefore, as described above, by adjusting the tin content and thickness in the electrolytic copper-tin alloy layer, the electrolytic copper-tin alloy layer can be dissolved and removed at an appropriate point. Therefore, for example, before only the electrolytic copper-tin alloy layer is dissolved before the electrolytic plating step for interlayer connection, an electroless plating film can be formed on the surface of the copper foil having the initial thickness state. Therefore, for example, when a wiring pattern is formed by the MSAP method, a seed layer having a uniform thickness can be formed, so that the seed layer is uniform in the thickness direction when the seed layer is removed in a rapid etching step or the like after the wiring pattern is formed. The composition is such that the seed layer can be dissolved and removed by a uniform etching rate. From the above, it can be seen that a wiring pattern having a good etching factor can be formed. Further, it is also not limited to the MSAP method, and it is also possible to form a wiring pattern by a method including an etching step such as a subtractive process. That is, in the desmear step after the laser drilling process, since the electrolytic copper-tin alloy layer can be removed, the copper foil (layer) maintaining the initial thickness state is exposed, so that a conductor layer having a uniform thickness can be obtained. A wiring pattern with a good etching factor can be formed.

此處,將不含錫之電解銅箔的蝕刻速度設為100時,錫含量超過 50質量%之電解銅-錫合金箔之蝕刻速度成為未達3。因此,該電解銅-錫合金層中之錫含量超過50質量%時,對銅蝕刻液之蝕刻速度變得過慢,因此於上述配 線圖案形成前所進行之各種蝕刻處理時,難以溶解去除電解銅-錫合金層。尤其,如圖1所示,電解銅-錫合金層中之錫含量超過70質量%時,電解銅-錫合金箔對銅蝕刻液之蝕刻速度變為0μm,因此,以一般的銅蝕刻液,無法自銅箔表面去除電解銅-錫合金層。該情況下,產生應另外設置用以去除電解銅-錫合金層之蝕刻步驟之必要,因而不佳。基於該觀點,電解銅-錫合金層中之錫含量較好為45質量%以下,更好為40質量%以下,又更好為35質量%以下。此時,電解銅箔對銅蝕刻液之蝕刻速度設為100時,電解銅-錫合金箔之蝕刻速度分別成為4(錫含量:45質量%)、13(錫含量:40質量%)、25(錫含量:35質量%)。因此,藉由使電解銅-錫合金層中之錫含量處於上述較佳範圍,在上述配線圖案形成前所進行之各種蝕刻處理中,可容易地去除電解銅-錫合金層。 Here, when the etching rate of the electroless copper foil containing no tin is set to 100, the tin content exceeds The etching rate of 50% by mass of the electrolytic copper-tin alloy foil was less than 3. Therefore, when the tin content in the electrolytic copper-tin alloy layer exceeds 50% by mass, the etching rate of the copper etching solution becomes too slow, so When various etching treatments are performed before the formation of the line pattern, it is difficult to dissolve and remove the electrolytic copper-tin alloy layer. In particular, as shown in FIG. 1, when the tin content in the electrolytic copper-tin alloy layer exceeds 70% by mass, the etching rate of the electrolytic copper-tin alloy foil to the copper etching solution becomes 0 μm, and therefore, a general copper etching solution is used. It is not possible to remove the electrolytic copper-tin alloy layer from the surface of the copper foil. In this case, it is not necessary to additionally provide an etching step for removing the electrolytic copper-tin alloy layer, which is not preferable. From this viewpoint, the tin content in the electrolytic copper-tin alloy layer is preferably 45% by mass or less, more preferably 40% by mass or less, and still more preferably 35% by mass or less. At this time, when the etching rate of the electrolytic copper foil to the copper etching solution was 100, the etching rates of the electrolytic copper-tin alloy foil were 4 (tin content: 45 mass%), 13 (tin content: 40 mass%), and 25, respectively. (tin content: 35 mass%). Therefore, by setting the tin content in the electrolytic copper-tin alloy layer to the above preferred range, the electrolytic copper-tin alloy layer can be easily removed in various etching treatments performed before the formation of the wiring pattern.

另一方面,錫含量成為未達25質量%時,電解銅-錫合金箔對銅 蝕刻液之蝕刻速度比不含錫之銅箔的蝕刻速度更快速,因此為了發揮作為蝕刻抗蝕劑之功能,有必要使電解銅-錫合金層之厚度增厚,利用蝕刻去除之銅量增加,故就經濟上而言並不佳。但,圖1所示之蝕刻速度係藉下述所求出之值:製作錫含量(質量%)不同之電解銅-錫合金箔(厚度:3μm),將各電解銅-錫合金箔於硫酸-過氧化氫系蝕刻液中浸漬30秒,經水洗、乾燥後,藉由剖面觀察測定厚度,基於因蝕刻所減少之厚度求得每單位時間之蝕刻量(μm)。又,此處之錫含量可藉如下述方法測定。具備「銅箔/電解銅-錫合金層」之層構成的雷射加工用銅箔之情況,對成為試料之雷射加工用銅箔全部溶解之溶液,使用ICP分析法、螢光X射線裝置、滴定定量法等測定全部銅含量,由自該全部銅含量減去「由銅箔剖面厚度所換算之銅量」所算出之「電解銅-錫合金層中所含之銅量」與「全部溶解液中之錫含量」,可算出錫含量(質量%)。且,藉由預先進行 剖面觀察等而已知銅箔厚度時,使用螢光X射線膜厚測定器,進行定義為二層箔之箔的組成分析,可算出電解銅-錫合金層中之錫含量(質量%)。 On the other hand, when the tin content is less than 25% by mass, the electrolytic copper-tin alloy foil is copper Since the etching rate of the etching liquid is faster than the etching speed of the copper foil containing no tin, in order to function as an etching resist, it is necessary to increase the thickness of the electrolytic copper-tin alloy layer and increase the amount of copper removed by etching. Therefore, it is not economically good. However, the etching rate shown in Fig. 1 is obtained by the following values: electrolytic copper-tin alloy foil (thickness: 3 μm) having different tin contents (% by mass), and each electrolytic copper-tin alloy foil in sulfuric acid - The hydrogen peroxide-based etching liquid was immersed for 30 seconds, washed with water, dried, and the thickness was measured by cross-sectional observation, and the etching amount per unit time (μm) was determined based on the thickness reduced by etching. Further, the tin content herein can be measured by the following method. In the case of a copper foil for laser processing having a layer of a "copper foil/electrolytic copper-tin alloy layer", an ICP method and a fluorescent X-ray device are used for a solution in which all of the copper foil for laser processing to be used as a sample is dissolved. The total copper content is determined by titration and the like, and the amount of copper contained in the electrolytic copper-tin alloy layer is calculated by subtracting the amount of copper converted from the thickness of the copper foil by the total copper content. The tin content (% by mass) can be calculated from the tin content in the solution. And by doing it in advance When the thickness of the copper foil is known by cross-sectional observation or the like, the composition of the foil defined as the two-layer foil is analyzed using a fluorescent X-ray film thickness measuring device, and the tin content (% by mass) in the electrolytic copper-tin alloy layer can be calculated.

(3)電解銅-錫合金層之厚度 (3) Thickness of electrolytic copper-tin alloy layer

電解銅-錫合金層之厚度可設為對應於該雷射加工用銅箔厚度及用途之適宜且適當之值。然而,若考慮在配線圖案形成前之適當階段藉由蝕刻而溶解去除該電解銅-錫合金層等時,則較好為3μm以下,更好為2μm以下。另一方面,該電解銅-錫合金層厚度未達0.1μm時,難以達成提高雷射光吸收率之目的,並且於配線圖案形成前所進行之各種蝕刻處理中,會有該電解銅-錫合金層無法充分發揮其作為銅箔之蝕刻抗蝕劑之功能之情況。因此,基於該觀點,電解銅-錫合金層之厚度較好為0.3μm以上,更好為0.5μm以上。且,如上述,對於銅蝕刻液之蝕刻速度係隨著該電解銅-錫合金層中之錫含量而變化,因此該電解銅-錫合金層之厚度係對應於該錫含量而設為適宜且適當之值較好。 The thickness of the electrolytic copper-tin alloy layer can be set to an appropriate and appropriate value corresponding to the thickness and use of the copper foil for laser processing. However, when the electrolytic copper-tin alloy layer or the like is dissolved and removed by etching at an appropriate stage before the formation of the wiring pattern, it is preferably 3 μm or less, more preferably 2 μm or less. On the other hand, when the thickness of the electrolytic copper-tin alloy layer is less than 0.1 μm, it is difficult to achieve the purpose of improving the laser light absorption rate, and the electrolytic copper-tin alloy may be present in various etching treatments performed before the formation of the wiring pattern. The layer cannot fully utilize its function as an etching resist for copper foil. Therefore, from this viewpoint, the thickness of the electrolytic copper-tin alloy layer is preferably 0.3 μm or more, more preferably 0.5 μm or more. Further, as described above, the etching rate of the copper etching solution varies depending on the tin content in the electrolytic copper-tin alloy layer, and therefore the thickness of the electrolytic copper-tin alloy layer is set to be appropriate in accordance with the tin content. The appropriate value is better.

(4)銅蝕刻液 (4) Copper etching solution

本發明中,作為銅蝕刻液,作為對銅之蝕刻液若為一般使用之蝕刻液,則可無特別限制地使用。例如,可使用氯化銅系蝕刻液、氯化鐵系蝕刻液、硫酸-過氧化氫水系蝕刻液、過硫酸鈉系蝕刻液、過硫酸銨系蝕刻液、過硫酸鉀系蝕刻液等之各種銅蝕刻液。 In the present invention, the copper etching solution can be used without any particular limitation as an etching solution for copper. For example, a copper chloride-based etching solution, a ferric chloride-based etching solution, a sulfuric acid-hydrogen peroxide-based etching solution, a sodium persulfate-based etching solution, an ammonium persulfate-based etching solution, a potassium persulfate-based etching solution, or the like can be used. Copper etching solution.

1-2.銅箔 1-2. Copper foil

接著針對銅箔加以說明。本發明中,所謂銅箔意指銅含量為99質量%以上之金屬箔,係指除不可避免雜質以外,不含有錫之非含錫銅箔。該銅箔亦可為電解銅箔及壓延銅箔之任一種。然而,就經濟性及生產效率考慮時,更好為電解銅箔。 Next, the copper foil will be described. In the present invention, the term "copper foil" means a metal foil having a copper content of 99% by mass or more, and means a non-tin-containing copper foil containing no tin other than inevitable impurities. The copper foil may be either an electrolytic copper foil or a rolled copper foil. However, in terms of economy and production efficiency, it is better to electrolyze copper foil.

該銅箔係在製造多層印刷配線板時,與絕緣層構成材料接著而 構成種晶層之一部分等之層。該銅箔厚度可為與一般作為印刷配線板材料而市售之銅箔同樣厚度。然而,例如,藉由MSAP法或減去法等之包含蝕刻步驟之方法形成配線圖案時,基於獲得更良好的蝕刻因子之觀點而言,該銅箔越薄越好,較好為7μm以下。尤其,使用該雷射加工用銅箔藉由MSAP法形成配線圖案時,基於以良好蝕刻因子形成更微細配線圖案之觀點而言,更好為該銅箔厚度係3μm以下之極薄電解銅箔,又更好為2μm以下。但該銅箔厚度為7μm以下時,為使處理時不會引起皺摺、破裂等之缺陷之較好以後述之具有載體箔雷射加工用銅箔之形態使用。 The copper foil is formed by a material constituting the insulating layer when manufacturing the multilayer printed wiring board. A layer constituting a part of the seed layer or the like. The copper foil may have the same thickness as a commercially available copper foil which is generally used as a printed wiring board material. However, for example, when a wiring pattern is formed by a method including an etching step such as an MSAP method or a subtractive method, the copper foil is preferably as thin as possible from the viewpoint of obtaining a better etching factor, and is preferably 7 μm or less. In particular, when the wiring pattern is formed by the MSAP method using the copper foil for laser processing, it is more preferable that the copper foil has a thickness of 3 μm or less and an extremely thin electrolytic copper foil from the viewpoint of forming a finer wiring pattern with a good etching factor. It is better to be 2 μm or less. However, when the thickness of the copper foil is 7 μm or less, it is preferably used in the form of a copper foil for carrier foil laser processing which will be described later so as not to cause defects such as wrinkles or cracks during the treatment.

且,基於使蝕刻因子為良好之觀點,較好該銅箔之與層間絕緣 層接著之側的面,亦即與設有電解銅-錫合金層之面相反側之面(以下稱為接著面)為平滑。具體而言,該接著面之表面粗糙度(Rzjis)較好為3μm以下,更好為2μm以下。但該銅箔之接著面上設有如下說明之粗化處理層時,所謂該接著面之表面粗糙度係指形成粗化處理層後之接著面之表面粗糙度。 Moreover, the interlayer insulation of the copper foil is preferably based on the viewpoint that the etching factor is good. The surface on the side following the layer, that is, the surface on the opposite side to the surface on which the copper-tin alloy layer is provided (hereinafter referred to as the succeeding surface) is smooth. Specifically, the surface roughness (Rzjis) of the adhesion surface is preferably 3 μm or less, more preferably 2 μm or less. However, when the rough surface of the copper foil is provided as follows, the surface roughness of the adhesion surface means the surface roughness of the adhesion surface after the roughening treatment layer is formed.

1-3.粗化處理層 1-3. Roughening layer

本發明之雷射加工用銅箔中,銅箔之接著面,亦即與設有上述 電解銅-錫合金層之面相反側之面上亦可設有粗化處理層。藉由在銅箔之接著面上設置粗化處理層,可提高銅箔與絕緣層之密著性。粗化處理層可藉由於銅箔表面(接著面)上附著形成微細金屬粒之方法、藉蝕刻法形成粗化表面之方法等而形成。用以形成粗化處理層之方法只要為可物理性提高銅箔與絕緣層之密著性則可藉任意方法進行,亦可採用與以往習知之粗化處理有關之各種方法。 In the copper foil for laser processing of the present invention, the bonding surface of the copper foil, that is, the above A roughened layer may also be provided on the opposite side of the surface of the electrolytic copper-tin alloy layer. By providing a roughened layer on the succeeding surface of the copper foil, the adhesion between the copper foil and the insulating layer can be improved. The roughening treatment layer can be formed by a method of forming fine metal particles on the surface (continuous surface) of the copper foil, a method of forming a roughened surface by etching, or the like. The method for forming the roughened layer may be carried out by any method as long as it can physically improve the adhesion between the copper foil and the insulating layer, and various methods relating to conventional roughening treatment can be employed.

1-4.底塗樹脂層 1-4. Primer resin layer

本發明之雷射加工用銅箔中,於銅箔之上述接著面上,亦可設 置底塗樹脂層。本發明中,所謂底塗樹脂層係對於銅箔及絕緣層構成材料兩者均具有良好密著性之接著劑層。例如,作為底塗樹脂層,可設為由含有環氧樹脂、芳香族聚醯胺樹脂之樹脂組成物所成之層。藉由於銅箔之接著面上設置該底塗樹脂層,可使銅箔與絕緣層構成材料良好地密著。 In the copper foil for laser processing of the present invention, it may be provided on the above-mentioned bonding surface of the copper foil. The bottom layer is coated with a resin layer. In the present invention, the undercoat resin layer is an adhesive layer having good adhesion to both the copper foil and the insulating layer constituent material. For example, the undercoat resin layer may be a layer made of a resin composition containing an epoxy resin or an aromatic polyamide resin. By providing the undercoat resin layer on the adhesion surface of the copper foil, the copper foil and the insulating layer constituent material can be well adhered.

底塗樹脂層之厚度只要可提高銅箔與絕緣層構成材料之密著 性,則並未特別限制,但可設為例如0.5μm以上且10μm以下之範圍內。又,銅箔之接著面上亦可同時設置粗化處理層與底塗樹脂層。 The thickness of the undercoat resin layer can increase the adhesion between the copper foil and the insulating layer constituent material. The nature is not particularly limited, but may be, for example, in the range of 0.5 μm or more and 10 μm or less. Further, a roughening treatment layer and a primer resin layer may be simultaneously provided on the adhesion surface of the copper foil.

1-5.雷射加工用銅箔之製造方法 1-5. Method for manufacturing copper foil for laser processing

本發明之雷射加工用銅箔中,難溶性雷射吸收層為上述電解銅- 錫合金層時,例如使用含銅離子與錫離子之電解液,在上述銅箔上藉由電解鍍敷法,只要可獲得積層有錫含量為25質量%以上且50質量%以下之電解銅-錫合金層的雷射加工用銅箔時,則其製造方法並未特別限制。且,銅箔之接著面上,除了上述之粗化處理層、底塗樹脂層以外,當然亦可設置防銹處理層、矽烷偶合處理層等之視需要的各種表面處理層。 In the copper foil for laser processing of the present invention, the poorly soluble laser absorbing layer is the above-mentioned electrolytic copper- In the case of the tin alloy layer, for example, an electrolytic solution containing copper ions and tin ions is used, and electrolytic copper plating on the copper foil can be used to obtain electrolytic copper having a tin content of 25% by mass or more and 50% by mass or less. When the copper foil for laser processing of a tin alloy layer is used, the manufacturing method is not specifically limited. Further, in addition to the roughening layer and the undercoat resin layer, the surface of the copper foil may be provided with various surface treatment layers as necessary, such as a rustproof treatment layer and a decane coupling treatment layer.

2.具有載體箔之雷射加工用銅箔 2. Copper foil for laser processing with carrier foil

接著,針對本發明之具有載體箔之雷射加工用銅箔(以下稱為具有載體箔之雷射加工用銅箔)加以說明。該具有載體箔之雷射加工用銅箔係在上述雷射加工用銅箔之難溶性雷射吸收層上可剝離地具備載體箔者,係以如載體箔/剝離層/雷射加工用銅箔(難溶性雷射吸收層/銅箔)之方式積層各層而成者。該具有載體箔之雷射加工用銅箔中,由於除了關於載體箔之構成以外,可採用與上述雷射加工用銅箔相同之構成,故此處僅針對與載體箔有關之構成加以說 明。 Next, a copper foil for laser processing having a carrier foil according to the present invention (hereinafter referred to as a copper foil for laser processing having a carrier foil) will be described. The copper foil for laser processing having a carrier foil is a carrier foil which is peelably provided on the poorly soluble laser absorbing layer of the copper foil for laser processing, such as a carrier foil/release layer/copper for laser processing In the form of a foil (poorly soluble laser absorbing layer/copper foil), each layer is laminated. In the copper foil for laser processing having the carrier foil, the same configuration as the copper foil for laser processing described above can be employed except for the configuration of the carrier foil. Therefore, only the configuration related to the carrier foil will be described here. Bright.

2-1.載體箔 2-1. Carrier foil

載體箔係可剝離地設置於雷射加工用銅箔上之金屬箔,於雷射 加工用銅箔係如上述為7μm以下之厚度的極薄銅箔之情況,藉由以載體箔對雷射加工用銅箔加以支持,可防止皺摺或破裂等,並可提高其處理性。構成載體箔之材料並未特別限制,但為了於載體箔上介隔剝離層藉由電析,可形成上述電解銅-錫合金層及銅箔,故較好係具有導電性之金屬材料。例如,可使用銅箔、銅合金箔、鋁箔、於鋁箔表面鍍敷銅或鋅等金屬鍍敷層之複合箔、不銹鋼箔、表面塗佈金屬之樹脂膜等。該等材料中,可較好地使用銅箔作為載體箔。 藉由使用銅箔作為載體箔,於自雷射加工用銅箔剝離載體箔後,由於可將其再利用作為銅原料,故基於資源保全之觀點而言係較佳。 The carrier foil is a metal foil which is detachably provided on the copper foil for laser processing, and is laser-coated When the copper foil for processing is an ultra-thin copper foil having a thickness of 7 μm or less as described above, by supporting the copper foil for laser processing with a carrier foil, wrinkles, cracks, and the like can be prevented, and the handleability can be improved. The material constituting the carrier foil is not particularly limited. However, in order to form the above-mentioned electrolytic copper-tin alloy layer and copper foil by electrolytic deposition on the carrier foil, it is preferred to have a conductive metal material. For example, a copper foil, a copper alloy foil, an aluminum foil, a composite foil in which a metal plating layer such as copper or zinc is plated on the surface of the aluminum foil, a stainless steel foil, a resin film coated with a metal, or the like can be used. Among these materials, a copper foil can be preferably used as the carrier foil. Since the copper foil is used as the carrier foil, the carrier foil is peeled off from the copper foil for laser processing, and since it can be reused as a copper raw material, it is preferable from the viewpoint of resource conservation.

載體箔之厚度並未特別限制,但可設為例如5μm以上且100μm 以下。載體箔厚度未達5μm時,載體箔厚度較薄,無法達成提高7μm以下厚度之極薄雷射加工用銅箔之處理性的載體箔原本目的,而不佳。且,基於資源保全觀點等而言,載體箔厚度較好為100μm以下,為35μm以下之厚度亦可使用。 The thickness of the carrier foil is not particularly limited, but may be, for example, 5 μm or more and 100 μm. the following. When the thickness of the carrier foil is less than 5 μm, the thickness of the carrier foil is thin, and the original purpose of the carrier foil for improving the thickness of the ultra-thin laser processing foil having a thickness of 7 μm or less cannot be achieved, which is not preferable. Further, the thickness of the carrier foil is preferably 100 μm or less, and may be used in a thickness of 35 μm or less, based on the viewpoint of resource conservation.

2-2.剝離層 2-2. Peeling layer

該具有載體箔之雷射加工用銅箔係所謂之可剝離型之具有載體箔之雷射加工用銅箔。對於剝離層要求對雷射加工用銅箔可藉手動作業簡易地剝離載體箔,並且於載體箔剝離為止之期間可以適度密著強度使載體箔與雷射加工用銅箔密著。作為此種剝離層,舉例為例如由無機劑構成之無機剝離層、由有機劑構成之有機剝離層。 The copper foil for laser processing having a carrier foil is a so-called peelable type copper foil for laser processing having a carrier foil. In the peeling layer, it is required that the carrier foil can be easily peeled off by a manual operation for the copper foil for laser processing, and the carrier foil and the copper foil for laser processing can be adhered to each other with a moderate adhesion strength during the peeling of the carrier foil. As such a release layer, for example, an inorganic release layer composed of an inorganic agent and an organic release layer composed of an organic agent are exemplified.

(1)無機剝離層 (1) Inorganic release layer

作為構成無機剝離層之無機劑,可使用例如自鉻、鎳、鉬、 鉭、釩、鎢、鈷及該等之氧化物所選出之1種或2種以上混合使用。 As the inorganic agent constituting the inorganic release layer, for example, chromium, nickel, molybdenum, or the like can be used. One or a mixture of two or more selected from the group consisting of ruthenium, vanadium, tungsten, cobalt, and the like.

(2)有機剝離層 (2) Organic peeling layer

作為構成有機剝離層之有機劑,可使用例如自含氮有機化合 物、含硫有機化合物、羧酸中所選出之1種或2種以上混合使用。剝離層可為無機剝離層及有機剝離層之任一者,但基於載體箔之撕離特性安定之觀點,較好為有機剝離層。 As the organic agent constituting the organic release layer, for example, organic synthesis of nitrogen-containing compounds can be used. One or a mixture of two or more selected from the group consisting of a sulfur-containing organic compound and a carboxylic acid is used in combination. The release layer may be either an inorganic release layer or an organic release layer, but is preferably an organic release layer from the viewpoint of stability of the tear-off property of the carrier foil.

作為含氮有機化合物、含硫有機化合物、羧酸更具體而言較好 採用以下化合物。作為含氮化合物可舉例為例如鄰三唑類、胺基三唑類、咪唑類、該等之塩或衍生物等。尤其,可舉例為鄰三唑類的羧基苯并三唑、為胺基三唑類的3-胺基-1H-1,2,4-三唑、為三唑衍生物的N’,N’-雙(苯并三唑基甲基)脲。 使用該等任一種以上可形成由含氮化合物所構成之有機剝離層。 More preferably, it is a nitrogen-containing organic compound, a sulfur-containing organic compound, or a carboxylic acid. The following compounds were used. The nitrogen-containing compound may, for example, be an ortho-triazole, an aminotriazole, an imidazole, or the like or a derivative thereof. In particular, it can be exemplified by a carboxybenzotriazole of an ortho-triazole, a 3-amino-1H-1,2,4-triazole which is an aminotriazole, and a N',N' which is a triazole derivative. - bis(benzotriazolylmethyl)urea. Any one or more of these may form an organic release layer composed of a nitrogen-containing compound.

至於含硫化合物可舉例為例如噻唑、巰基苯并噻唑、二苯并硫 胺基二硫醚、巰基苯并噻唑之環己基胺鹽、巰基苯并噻唑之二環己基胺鹽、硫氰酸及2-苯并咪唑硫醇等。使用含硫化合物形成有機剝離層時,該等中,最好使用巰基苯并噻唑及硫氰酸。 As the sulfur-containing compound, for example, thiazole, mercaptobenzothiazole, dibenzosulfuric acid can be exemplified. Aminodisulfide, a cyclohexylamine salt of mercaptobenzothiazole, a dicyclohexylamine salt of mercaptobenzothiazole, thiocyanate, 2-benzimidazolethiol, and the like. When an organic release layer is formed using a sulfur-containing compound, among these, mercaptobenzothiazole and thiocyanic acid are preferably used.

作為羧酸類,可舉例例如高分子量羧酸。高分子量羧酸中,最 好使用長鏈烴之單羧酸的脂肪酸。脂肪酸可為飽和脂肪酸,但最好使用油酸、亞麻酸等之不飽和脂肪酸。 The carboxylic acid may, for example, be a high molecular weight carboxylic acid. Among the high molecular weight carboxylic acids, the most It is good to use fatty acids of long-chain hydrocarbon monocarboxylic acids. The fatty acid may be a saturated fatty acid, but an unsaturated fatty acid such as oleic acid or linolenic acid is preferably used.

(3)剝離層之厚度 (3) Thickness of the peeling layer

剝離層厚度較好為100nm以下,更好為50nm以下。所謂的可剝 離型之具有載體箔之銅箔一般係在載體箔之表面上設置剝離層,藉由電解等方法,透過剝離層使銅於載體箔上析出而形成電解銅箔。此時,若剝離層厚度超過100nm,尤其於有機系剝離層時,難以在該剝離層上形成電解銅箔。且,與此同時,會使載體箔與電解銅箔之密著強度降低。因此,剝離層厚度較好為100nm以下。若可形成均一厚度之剝離層,則剝離層厚度之下限值並未特別限制。然而,處於未達1nm時,難以形成均一厚度之剝離層,而於厚度產生偏差。因此,剝離層厚度較好為1nm以上,更好為2nm以上。 The thickness of the peeling layer is preferably 100 nm or less, more preferably 50 nm or less. So-called peelable The copper foil having a carrier foil which is released from the carrier is generally provided with a release layer on the surface of the carrier foil, and copper is deposited on the carrier foil through a release layer by electrolysis or the like to form an electrolytic copper foil. At this time, when the thickness of the release layer exceeds 100 nm, especially in the organic release layer, it is difficult to form an electrolytic copper foil on the release layer. At the same time, the adhesion strength between the carrier foil and the electrolytic copper foil is lowered. Therefore, the thickness of the peeling layer is preferably 100 nm or less. If a peeling layer having a uniform thickness can be formed, the lower limit of the thickness of the peeling layer is not particularly limited. However, when it is less than 1 nm, it is difficult to form a peeling layer of uniform thickness, and variations occur in thickness. Therefore, the thickness of the release layer is preferably 1 nm or more, more preferably 2 nm or more.

2-3.耐熱金屬層 2-3. Heat resistant metal layer

該具有載體箔之雷射加工用銅箔較好係於載體箔與剝離層之 間,或於剝離層與雷射加工用銅箔之電解銅-錫合金層之間,形成耐熱金屬層,而成為載體箔/耐熱金屬層/剝離層/雷射加工用銅箔之層構成,或成為載體箔/剝離層/耐熱金屬層/雷射加工用銅箔之層構成。 The copper foil for laser processing having a carrier foil is preferably attached to the carrier foil and the release layer. Between the peeling layer and the electrolytic copper-tin alloy layer of the copper foil for laser processing, a heat resistant metal layer is formed, and the carrier foil/heat resistant metal layer/release layer/copper foil for laser processing is formed. Or it may be a layer of a carrier foil / peeling layer / heat resistant metal layer / copper foil for laser processing.

2-4.具有載體箔之雷射加工用銅箔之製造方法 2-4. Method for manufacturing copper foil for laser processing with carrier foil

具有載體箔之雷射加工用銅箔之製造方法並未特別限制。例如於載體箔表面形成剝離層後,透過剝離層於載體箔上電解析出上述電解銅-錫合金層、銅箔等,只要可獲得上述構成之具有載體箔之雷射加工用銅箔,則可藉任意方法製造。 The method for producing the copper foil for laser processing having the carrier foil is not particularly limited. For example, after the release layer is formed on the surface of the carrier foil, the electrolytic copper-tin alloy layer, copper foil, or the like is electrically analyzed on the carrier foil through the release layer, and if the copper foil for laser processing having the carrier foil having the above configuration is obtained, It can be manufactured by any method.

2-5.具有載體箔之雷射加工用銅箔之電解銅-錫合金層之錫含量之測定方法 2-5. Method for measuring tin content of electrolytic copper-tin alloy layer of copper foil for laser processing with carrier foil

於具有載體箔之雷射加工用銅箔之情況,係具備「載體箔/剝離層/電解銅-錫合金層/銅箔」之層構成。因此,為了進行電解銅-錫合金層之錫含量測定,較好採用如下方法。本發明之具有載體箔之雷射加工用銅箔之情況, 若撕離載體箔則成為「剝離層/電解銅-錫合金層/銅箔」之層構成。而且,由於此時之剝離層係以上述成分構成,故不會對電解銅-錫合金層之錫含量之測定造成影響。因此,將「剝離層/電解銅-錫合金層/銅箔」之層構成的試料全部溶解之溶液,使用ICP分析法、螢光X射線裝置、滴定定量法等,測定全部銅含量,由自該全部銅含量減去「由銅箔之剖面厚度換算之銅量」所算出之「電解銅-錫合金層中所含之銅量」與「溶解液中之錫含量」,可算出錫含量(質量%)。且,預先藉由剖面觀察等已知銅箔厚度時,使用螢光X射線膜厚測定器,進行定義為二層箔之箔之組成分析,可算出電解銅-錫合金層中之錫含量(質量%)。 In the case of a copper foil for laser processing having a carrier foil, a layer structure of "carrier foil/release layer/electrolytic copper-tin alloy layer/copper foil" is provided. Therefore, in order to measure the tin content of the electrolytic copper-tin alloy layer, the following method is preferably employed. In the case of the copper foil for laser processing of the carrier foil of the present invention, If the carrier foil is peeled off, it becomes a layer structure of "peeling layer/electrolytic copper-tin alloy layer/copper foil". Further, since the peeling layer at this time is composed of the above components, it does not affect the measurement of the tin content of the electrolytic copper-tin alloy layer. Therefore, the solution in which the sample consisting of the layer of the "peeling layer/electrolytic copper-tin alloy layer/copper foil" is completely dissolved is measured by ICP analysis, fluorescent X-ray apparatus, titration and the like, and the total copper content is measured. The total copper content is calculated by subtracting the amount of copper contained in the electrolytic copper-tin alloy layer calculated from the amount of copper converted from the thickness of the copper foil, and the tin content in the dissolved solution. quality%). Further, when the thickness of the known copper foil such as the cross-sectional observation is used in advance, the composition of the foil defined as the two-layer foil is analyzed using a fluorescent X-ray film thickness measuring device, and the tin content in the electrolytic copper-tin alloy layer can be calculated ( quality%).

3.貼銅積層體 3. Paste copper laminate

接著,針對本發明之貼銅積層體進行說明。本發明之貼銅積層 體之特徵係以使上述難溶性雷射吸收層配置於前述紅外線雷射光所照射之側之方式,使上述雷射加工用銅箔與絕緣層構成材料積層。亦即,本發明之貼銅積層體若係有絕緣層構成材料與上述雷射加工用銅箔積層,且為具有絕緣層構成材料/銅箔/難溶性雷射吸收層(電解銅-錫合金層)之順序積層而成之積層體,則可為任意者。且,若可獲得該貼銅積層體,則其製造方法並未限定。例如,於所謂之B階段之絕緣樹脂基材或絕緣樹脂層上積層上述雷射加工用銅箔或具有載體箔之銅箔側,藉由加熱加壓,可獲得於絕緣樹脂基材或絕緣樹脂層上積層雷射加工用銅箔而成之貼銅積層體。又,使用具有載體箔之雷射加工用銅箔之情況,只要於適當階段去除載體箔即可。 Next, the copper-clad laminate of the present invention will be described. Copper clad layer of the invention The body is characterized in that the above-described poorly-soluble laser absorbing layer is disposed on the side irradiated with the infrared laser light, and the copper foil for laser processing and the insulating layer constituting material are laminated. In other words, the copper-clad laminate according to the present invention has an insulating layer constituent material laminated with the above-described copper foil for laser processing, and has an insulating layer constituent material/copper foil/poorly soluble laser absorbing layer (electrolytic copper-tin alloy) The layered body in which the layers are stacked in any order may be any one. Further, if the copper-clad laminate is obtained, the production method thereof is not limited. For example, the copper foil for laser processing or the copper foil having the carrier foil is laminated on the insulating resin substrate or the insulating resin layer of the B-stage, and is obtained by heating and pressurizing the insulating resin substrate or the insulating resin. A copper-clad laminate formed by laminating copper foil for laser processing on a layer. Further, in the case of using a copper foil for laser processing having a carrier foil, the carrier foil may be removed at an appropriate stage.

4.印刷配線板之製造方法 4. Manufacturing method of printed wiring board

接著,說明本發明之印刷配線板之製造方法。此處,邊參考圖 2,邊以使用本發明之雷射加工用銅箔10,利用MSAP法形成配線圖案之情況為 例加以說明。又,此處所用之雷射加工用銅箔10係設為具備底塗樹脂層11/銅箔(電解銅箔層)12/電解銅-錫合金層13(難溶性雷射吸收層)之層構成者,且於銅箔12之接著面未設置粗化處理層者。又,以下中,針對透過絕緣層積層3層以上之配線層製造多層印刷配線板之方法加以說明。但,本發明之印刷配線板之製造方法並非限定於多層印刷配線板之製造方法者,亦可適用於製造兩面印刷配線板時。 Next, a method of manufacturing the printed wiring board of the present invention will be described. Here, side reference map 2. The case where the wiring pattern is formed by the MSAP method using the copper foil 10 for laser processing of the present invention is An example is given. Further, the copper foil 10 for laser processing used herein is a layer including a primer resin layer 11 / a copper foil (electrolytic copper foil layer) 12 / an electrolytic copper-tin alloy layer 13 (a poorly soluble laser absorbing layer). As a component, the roughening layer is not provided on the back surface of the copper foil 12. In the following, a method of manufacturing a multilayer printed wiring board by a wiring layer having three or more layers of an insulating laminate layer will be described. However, the method of manufacturing the printed wiring board of the present invention is not limited to the method of manufacturing the multilayer printed wiring board, and may be applied to the production of the double-sided printed wiring board.

首先,於內層電路30(其他導體層)上介隔所謂B階段之絕緣層構 成材料20,於接著面上積層上述具有載體箔之雷射加工用銅箔10之接著面側。 接著,藉由加熱加壓,使絕緣層構成材料20與內層電路30及雷射加工用銅箔10分別密著,而獲得圖2(a)所示之積層體。 First, the so-called B-stage insulating layer structure is interposed on the inner layer circuit 30 (other conductor layers). The material 20 is laminated on the succeeding surface of the copper foil 10 for laser processing having the carrier foil. Then, the insulating layer constituent material 20 is adhered to the inner layer circuit 30 and the laser foil for laser processing 10 by heating and pressing, whereby the laminated body shown in Fig. 2(a) is obtained.

接著,於成為最外層之電解銅-錫合金層13的表面上,由二氧化 碳氣體雷射等直接照射紅外線雷射光,而形成以內層電路30之導體圖案部30a為底部之微通孔40(參考圖2(b))。 Next, on the surface of the electrolytic copper-tin alloy layer 13 which becomes the outermost layer, by oxidation The infrared laser light is directly irradiated by a carbon gas laser or the like to form a microvia 40 having a bottom portion of the conductor pattern portion 30a of the inner layer circuit 30 (refer to FIG. 2(b)).

形成微通孔40後,使用去膠渣液,進行將殘存於微通孔40底部 之膠渣去除之去膠渣步驟(參考圖2(c))。去膠渣步驟中,將積層體100浸漬於膨潤液之後,浸漬於所謂的去膠渣液(例如鹼性過錳酸水溶液等)中,去除膠渣後,浸漬於中和液(還原劑)中,進行使過錳酸鉀還原並去除之中和處理。 After the micro via 40 is formed, the degumming liquid is used to remain at the bottom of the micro via 40 The desmear step of removing the glue residue (refer to FIG. 2(c)). In the desmear step, the layered body 100 is immersed in the swelling liquid, and then immersed in a so-called degreasing liquid (for example, an alkaline permanganic acid aqueous solution or the like) to remove the dregs, and then immersed in the neutralizing liquid (reducing agent). In the middle, the potassium permanganate is reduced and the neutralization treatment is removed.

接著,進行作為無電解鍍敷步驟之前處理的微蝕刻步驟。微蝕 刻步驟中,係使用微蝕刻液(例如硫酸-過氧化氫蝕刻液或過硫酸銨系水溶液等),將附著於微通孔40之孔周圍之污物等去除。且,於微通孔40底部殘存膠渣時,將其等去除(參考圖2(d))。 Next, a micro-etching step as a treatment before the electroless plating step is performed. Microetching In the engraving step, a micro-etching liquid (for example, a sulfuric acid-hydrogen peroxide etching solution or an ammonium persulfate aqueous solution or the like) is used to remove dirt or the like adhering to the pores of the micro-through holes 40. Further, when the residue remains on the bottom of the microvia 40, it is removed (refer to FIG. 2(d)).

該等去膠渣步驟及微蝕刻步驟中,使該積層體100之表面與中和 液或微蝕刻液等之對銅具有蝕刻性之處理液接觸。該電解銅-錫合金層13由於具有對銅蝕刻液之蝕刻性,故該等步驟中,該表面被蝕刻。由於隨著該電解銅-錫合金層13之厚度及錫含量,對於銅蝕刻液之蝕刻速度產生變化,故藉由調整該等而可控制使該電解銅-錫合金層13溶解之時點。例如,於微蝕刻步驟中,有必要使銅箔12表面清淨化之情況等,較好藉由調整該電解銅-錫合金層13之厚度或材質等,於去膠渣步驟中完全溶解去除該電解銅-錫合金層13。另一方面,於銅箔12厚度有必要維持最初厚度之情況下,可於去膠渣步驟中,先使該電解銅-錫合金層13不完全溶解而殘存,於隨後之微蝕刻步驟中,使該電解銅-錫合金層13完全溶解去除即可。溶解去除該電解銅-錫合金層13之時點,只要對應於該印刷配線板所要求之特性等設為適宜且適當的時點即可。 In the desmear step and the micro-etching step, the surface of the layered body 100 is neutralized A liquid or microetching solution or the like which is in contact with copper having an etching property. Since the electrolytic copper-tin alloy layer 13 has an etching property to the copper etching liquid, the surface is etched in the steps. Since the etching rate of the copper etching solution changes depending on the thickness and the tin content of the electrolytic copper-tin alloy layer 13, the timing at which the electrolytic copper-tin alloy layer 13 is dissolved can be controlled by adjusting these. For example, in the micro-etching step, it is necessary to clean the surface of the copper foil 12, etc., and it is preferable to completely dissolve and remove the copper-tin alloy layer 13 by adjusting the thickness or material of the electrolytic copper-tin alloy layer 13 in the desmear step. Electrolytic copper-tin alloy layer 13. On the other hand, in the case where it is necessary to maintain the initial thickness of the copper foil 12, the electrolytic copper-tin alloy layer 13 may be left incompletely dissolved in the desmear step, and in the subsequent microetching step, The electrolytic copper-tin alloy layer 13 may be completely dissolved and removed. The time at which the electrolytic copper-tin alloy layer 13 is dissolved and removed may be appropriately and appropriately determined in accordance with the characteristics required for the printed wiring board.

接著,藉由無電解鍍敷步驟,於微通孔40之孔內部與銅箔層12 上,形成無電解鍍敷被膜,進行層間連接(省略圖示)。隨後,於種晶層(銅箔+無電解鍍敷被膜)上設置鍍敷抗蝕劑,藉由電解鍍敷法,形成配線圖案同時於通孔內進行填充鍍敷。接著,藉由快速蝕刻處理,一起去除鍍敷抗蝕劑及鍍敷抗蝕劑下之種晶層。又,圖2中,無電解鍍敷步驟以後之步驟省略圖示。且,以下中對於各構成要素之符號亦省略。 Next, the inside of the hole of the micro via 40 and the copper foil layer 12 are performed by an electroless plating step. On the top, an electroless plating film is formed, and interlayer connection (not shown) is performed. Subsequently, a plating resist is provided on the seed layer (copper foil + electroless plating film), and a wiring pattern is formed by electrolytic plating to perform filling plating in the via hole. Next, the plating resist and the seed layer under the plating resist are removed together by a rapid etching process. In addition, in FIG. 2, the step after the electroless plating process is abbreviate|omitted. In addition, the symbols of the respective constituent elements are also omitted in the following.

如上述,依據本發明之雷射加工用銅箔,可不進行黑化處理等 之用以提高雷射光之吸收率之前處理,而直接照射雷射光,進行開孔加工。因此,可減少配線圖案形成前之蝕刻處理次數。且,依據本發明,於銅箔表面上具備電解銅-錫合金層等之難溶性雷射吸收層,因此雷射開孔加工後,於配線圖案形成前進行之各種蝕刻處理中,可防止銅箔表面被蝕刻。又,如上所述,作為難溶性雷射吸收層,採用電解銅-錫合金層時,藉由適當調整其錫含量、或該 電解銅-錫合金層之厚度,可控制將電解銅-錫合金層溶解去除之時點。如圖2所示之例中,顯示電解銅-錫合金層中之錫含量較多,於去膠渣步驟中電解銅-錫層未溶解之情況。然而,並不限定於圖示之例者,亦可對應於該印刷配線板所要求之特性等,調整電解銅-錫合金層中之錫量及厚度,並於去膠渣步驟中溶解去除電解銅-錫合金層。 As described above, the copper foil for laser processing according to the present invention can be omitted from blackening treatment or the like. It is used to improve the absorption rate of the laser light, and directly irradiates the laser light to perform the hole drilling process. Therefore, the number of etching processes before the formation of the wiring pattern can be reduced. Further, according to the present invention, the insoluble laser absorbing layer such as an electrolytic copper-tin alloy layer is provided on the surface of the copper foil, so that after the laser boring process, copper can be prevented from being formed in various etching processes before the formation of the wiring pattern. The foil surface is etched. Further, as described above, when the electrolytic copper-tin alloy layer is used as the poorly soluble laser absorbing layer, the tin content thereof is appropriately adjusted, or The thickness of the electrolytic copper-tin alloy layer controls the point at which the electrolytic copper-tin alloy layer is dissolved and removed. In the example shown in Fig. 2, it is shown that the content of tin in the electrolytic copper-tin alloy layer is large, and the electrolytic copper-tin layer is not dissolved in the desmear step. However, the present invention is not limited to the illustrated examples, and the amount and thickness of tin in the electrolytic copper-tin alloy layer may be adjusted in accordance with characteristics required for the printed wiring board, and dissolved and removed in the desmear step. Copper-tin alloy layer.

以下,顯示實施例對本發明更具體加以說明。又,本發明並非 限定於以下實施例者。 Hereinafter, the present invention will be more specifically described by showing examples. Also, the present invention is not It is limited to the following examples.

實施例 Example

該實施例中,以下述方法製作具有載體箔之雷射加工用銅箔, 隨後製作貼銅積層體,進行藉由二氧化碳氣體雷射所致之雷射開孔加工性評價,並且於印刷配線板之製造步驟中,進行供於配線圖案形成前所進行之蝕刻處理時的銅箔(電解銅箔層)之厚度偏差評價。以下,依序進行描述。又,關於評價方法等於後進行描述。 In this embodiment, a copper foil for laser processing having a carrier foil is produced by the following method. Subsequently, a copper-clad laminate is produced, and the laser drilling processability evaluation by the carbon dioxide gas laser is performed, and in the manufacturing step of the printed wiring board, copper is supplied for the etching treatment before the wiring pattern formation. Thickness deviation evaluation of foil (electrolytic copper foil layer). Hereinafter, the description will be made in order. Further, the evaluation method is equal to the description.

[具有載體箔之雷射加工用銅箔之製作] [Production of Copper Foil for Laser Processing with Carrier Foil]

本實施例中,藉由以下步驟A~步驟E製作具有載體箔之雷射加 工用銅箔。 In this embodiment, the laser with the carrier foil is fabricated by the following steps A~E. Working copper foil.

步驟A:使用單面側之表面粗糙度(Rzjis)為0.6μm之厚18μm的電 解銅箔作為載體箔,如下述於載體箔表面形成剝離層。又,表面粗糙度(Rzjis)係依據JIS B 0601,以使用了前端曲率半徑為2μm之金剛石探針之觸針式表面粗糙度測定儀進行測定之值。 Step A: Using a surface roughness (Rzjis) of one side, a thickness of 18 μm and a thickness of 18 μm The copper foil was decomposed as a carrier foil, and a release layer was formed on the surface of the carrier foil as described below. Further, the surface roughness (Rzjis) is a value measured by a stylus type surface roughness measuring instrument using a diamond probe having a tip radius of curvature of 2 μm in accordance with JIS B 0601.

將該載體膜對於游離硫酸濃度為150g/l、銅濃度為10g/l、羧基 苯并三唑濃度為800ppm、液溫30℃之含有羧基苯并三唑之稀硫酸水溶液浸漬 30秒。隨後,藉由拉起載體箔,酸洗去除附著於載體箔表面之污染成分,並且使羧基苯并三唑吸附於表面,於載體箔表面形成剝離層,作成具備剝離層之載體箔。 The carrier film has a free sulfuric acid concentration of 150 g/l, a copper concentration of 10 g/l, and a carboxyl group. Impregnation of dilute sulfuric acid solution containing carboxybenzotriazole with a concentration of benzotriazole of 800 ppm and a liquid temperature of 30 ° C 30 seconds. Subsequently, the carrier foil was pulled up, the contaminated component adhering to the surface of the carrier foil was removed by pickling, and the carboxybenzotriazole was adsorbed on the surface, and a release layer was formed on the surface of the carrier foil to form a carrier foil having a release layer.

步驟B:接著,於含有金屬成分的電解液中,使具備剝離層之載 體箔進行陰極極化,於剝離層表面形成耐熱金屬層,作成具備耐熱金屬層與剝離層之載體箔。此處,作為鎳電解液,係使用含硫酸鎳(NiSO4.6H2O)330g/l、氯化鎳(NiCl2.6H2O)45g/l、硼酸30g/l之浴pH為3之瓦特浴(Watts bath),以液溫45℃、陰極電流密度2.5A/dm2進行電解,於剝離層表面形成厚度0.01μm之鎳層,製作具備耐熱金屬層與剝離層之載體箔。 Step B: Next, in the electrolytic solution containing the metal component, the carrier having the peeling layer is provided The body foil is cathodically polarized, and a heat resistant metal layer is formed on the surface of the release layer to form a carrier foil having a heat resistant metal layer and a release layer. Here, as the nickel electrolyte, a Watts bath containing a nickel sulfate (NiSO4.6H2O) 330 g/l, a nickel chloride (NiCl2.6H2O) 45 g/l, and a boric acid 30 g/l bath pH of 3 is used. Electrolysis was carried out at a liquid temperature of 45 ° C and a cathode current density of 2.5 A/dm 2 , and a nickel layer having a thickness of 0.01 μm was formed on the surface of the release layer to prepare a carrier foil having a heat resistant metal layer and a release layer.

步驟C:接著,於具有下述組成之銅-錫鍍敷浴中,以下述電解 條件,使該具備耐熱金屬層與剝離層之載體箔進行陰極極化,而於耐熱金屬層表面形成厚度0.7μm之電解銅-錫合金層。 Step C: Next, in the copper-tin plating bath having the following composition, the following electrolysis Under conditions, the carrier foil having the heat resistant metal layer and the release layer was cathodically polarized, and an electrolytic copper-tin alloy layer having a thickness of 0.7 μm was formed on the surface of the heat resistant metal layer.

(銅-錫鍍敷浴之組成及電解條件) (Composition of copper-tin plating bath and electrolysis conditions)

CuSO4.5H2O:157g/l(Cu換算40g/l) CuSO4.5H2O: 157 g/l (40 g/l in terms of Cu)

SnSO4:127g/l(Sn換算70g/l) SnSO4: 127g / l (Sn conversion 70g / l)

C6H11O7Na:70g/l C6H11O7Na: 70g/l

游離H2SO4:70g/l Free H2SO4: 70g/l

液溫:35℃ Liquid temperature: 35 ° C

陰極電流密度:30A/dm2 Cathode current density: 30A/dm2

步驟D:接著,將具備電解銅-錫合金層等之載體膜,於下述組成之銅鍍敷浴中,以下述條件進行陰極分極,於電解銅-錫金屬層表面形成厚度2μm之電解銅箔,獲得本發明之具有載體箔之雷射加工用銅箔。 Step D: Next, a carrier film containing an electrolytic copper-tin alloy layer or the like is subjected to cathode polarization in a copper plating bath having the following composition to form an electrolytic copper having a thickness of 2 μm on the surface of the electrolytic copper-tin metal layer. A foil for obtaining a laser foil for laser processing having a carrier foil of the present invention.

(銅鍍敷浴之組成及電解條件) (Composition of copper plating bath and electrolysis conditions)

CuSO4.5H2O:255g/l(Cu換算65g/l) CuSO4.5H2O: 255g/l (65g/l in Cu conversion)

游離H2SO4:150g/l Free H2SO4: 150g/l

液溫:45℃ Liquid temperature: 45 ° C

陰極電流密度:15A/dm2 Cathode current density: 15A/dm2

步驟E:本實施例中,進一步於上述之具有載體箔之雷射加工用銅箔的電解銅箔側之面上形成鋅-鎳合金防銹層,實施電解鉻酸鹽處理、胺基系矽烷偶合劑處理,獲得具有載體箔之經表面處理之雷射加工用銅箔。 Step E: In the present embodiment, a zinc-nickel alloy rust preventive layer is further formed on the surface of the electrolytic copper foil side of the copper foil for laser processing having the carrier foil, and an electrolytic chromate treatment and an amine decane are performed. The coupler is treated to obtain a surface-treated copper foil for laser processing having a carrier foil.

於該具有載體箔之雷射加工用銅箔,電解銅-錫合金層中之錫含量為27.5質量%。實施例之錫含量係如下述般測定。將於載體箔表面形成剝離層,於該剝離層表面形成耐熱金屬層,於該耐熱金屬層表面形成電解銅-錫合金層之階段者作為電解銅-錫合金層中之錫含量測定試料。隨後,自該載體箔剝離該試料之電解銅-錫合金層,使用螢光X射線膜厚測定器XDAL-FD(Fischer Instruments製)進行箔組成分析,算出電解銅-錫合金層中之錫含量(質量%)。又,關於以下之比較例,亦藉同樣方法進行錫含量測定。 In the copper foil for laser processing having the carrier foil, the tin content in the electrolytic copper-tin alloy layer was 27.5% by mass. The tin content of the examples was measured as follows. A peeling layer is formed on the surface of the carrier foil, and a heat resistant metal layer is formed on the surface of the peeling layer, and a stage for forming an electrolytic copper-tin alloy layer on the surface of the heat resistant metal layer is used as a tin content measuring sample in the electrolytic copper-tin alloy layer. Subsequently, the electrolytic copper-tin alloy layer of the sample was peeled off from the carrier foil, and a foil composition analysis was performed using a fluorescent X-ray film thickness measuring device XDAL-FD (manufactured by Fischer Instruments) to calculate the tin content in the electrolytic copper-tin alloy layer. (quality%). Further, regarding the following comparative examples, the tin content was measured by the same method.

[貼銅積層板之製作] [Production of copper-clad laminate]

使用上述之具有載體箔之雷射加工用銅箔,於電解銅箔之接著面,藉由熱加壓加工貼合作為絕緣樹脂層構成材的厚度100μm之FR-4的預浸片。接著,藉由介隔剝離層將具有載體箔之雷射加工用銅箔的載體箔剝離,而去除載體箔獲得貼銅積層板。 Using the above-described copper foil for laser processing having a carrier foil, a prepreg sheet of FR-4 having a thickness of 100 μm in which the insulating resin layer was formed was bonded to the surface of the electrodeposited copper foil by thermal press working. Next, the carrier foil of the copper foil for laser processing having the carrier foil was peeled off by the release layer, and the carrier foil was removed to obtain a copper-clad laminate.

比較例 Comparative example

[比較例1] [Comparative Example 1]

於比較例1中,除了未具備電解銅-錫合金層以外,與實施例同 樣,製作可剝離型之具有載體箔之電解銅箔。接著,使用該具有載體箔之電解銅箔,與實施例同樣製作貼銅積層板。 In Comparative Example 1, the same as the example except that the electrolytic copper-tin alloy layer was not provided. Thus, a peelable type electrolytic copper foil having a carrier foil was produced. Next, a copper-clad laminate was produced in the same manner as in the Example using the electrodeposited copper foil with a carrier foil.

[比較例2] [Comparative Example 2]

於比較例2中,步驟C中,於下述組成之銅-錫鍍敷浴中,以下述 電解條件使載體箔進行陰極分極,介隔剝離層及耐熱金屬層於載體箔上形成厚度0.7μm之電解銅-錫合金層以外,與實施例同樣,製作具有載體箔之電解銅箔。接著,使用該具有載體箔之電解銅箔,與實施例同樣製作貼銅積層板。 In Comparative Example 2, in the copper-tin plating bath of the following composition in the step C, the following Electrolytic conditions were carried out except that the carrier foil was subjected to cathode polarization, and an electrolytic copper-tin alloy layer having a thickness of 0.7 μm was formed on the carrier foil via a release layer and a heat resistant metal layer. An electrolytic copper foil having a carrier foil was produced in the same manner as in the examples. Next, a copper-clad laminate was produced in the same manner as in the Example using the electrodeposited copper foil with a carrier foil.

(銅-錫鍍敷浴之組成及電解條件) (Composition of copper-tin plating bath and electrolysis conditions)

CuSO4.5H2O:79g/l(Cu換算20g/l) CuSO4.5H2O: 79 g/l (20 g/l in terms of Cu)

SnSO4:72g/l(Sn換算40g/l) SnSO4: 72g/l (Sn conversion 40g/l)

H2SO4:70g/l H2SO4: 70g/l

液溫:45℃ Liquid temperature: 45 ° C

陰極電流密度:15A/dm2 Cathode current density: 15A/dm2

於該具有載體箔之電解銅箔,電解銅-錫合金層中之錫含量為12.9質量%。 In the electrolytic copper foil having a carrier foil, the tin content in the electrolytic copper-tin alloy layer was 12.9% by mass.

[比較例3] [Comparative Example 3]

於比較例3中,使用比較例1之具有載體箔之電解銅箔,以與實施例同樣之方法製作貼銅積層板。接著,於該貼銅積層板之銅箔表面,使用市售無電解錫鍍敷液,形成0.4μm厚之金屬錫層。接著,將該形成有金屬錫層之貼銅積層板在200℃×30分鐘之條件下進行加熱處理,引起電解銅箔之銅成分與金屬錫層之錫成分間之相互擴散,而獲得在該銅箔表層上具備以錫-銅為主體之 擴散合金層之貼銅積層板。 In Comparative Example 3, a copper-clad laminate was produced in the same manner as in Example using the electrodeposited copper foil having a carrier foil of Comparative Example 1. Next, a commercially available electroless tin plating solution was used on the surface of the copper foil of the copper-clad laminate to form a metal tin layer having a thickness of 0.4 μm. Then, the copper-clad laminate having the metal tin layer formed thereon is subjected to heat treatment at 200 ° C for 30 minutes to cause mutual diffusion between the copper component of the electrolytic copper foil and the tin component of the metallic tin layer. The surface of the copper foil is tin-copper-based A copper-clad laminate of a diffusion alloy layer.

[評價] [Evaluation]

1.評價方法 Evaluation method

(1)雷射開孔加工性之評價 (1) Evaluation of laser hole drilling processability

使用上述實施例及比較例所製作之各貼銅積層板,於雷射開孔 加工性能之評價係使用二氧化碳氣體雷射。此時之利用二氧化碳氣體雷射之開孔加工條件係在加工能量6.9mJ、脈衝寬度16微秒。光束徑120μm之條件進行。 Using the copper-clad laminates prepared in the above examples and comparative examples to open the laser holes The evaluation of the processing performance was performed using a carbon dioxide gas laser. At this time, the opening processing conditions using the carbon dioxide gas laser were 6.9 mJ in processing energy and 16 microseconds in pulse width. The beam diameter was 120 μm.

(2)銅箔厚度偏差之評價 (2) Evaluation of thickness deviation of copper foil

使用上述實施例及比較例所製作之各貼銅積層板,進行與製造 印刷配線板之過程中一般所進行之去膠渣步驟及微蝕刻步驟同樣的處理,評價各步驟前後中之銅箔厚度變化。 Using the copper-clad laminates produced in the above examples and comparative examples, and manufacturing The same steps were performed in the desmear step and the micro-etching step generally performed in the process of printing the wiring board, and the thickness variation of the copper foil in the front and back of each step was evaluated.

去膠渣步驟:首先,於去膠渣步驟中,進行膨潤處理(膨潤液: 羅門哈斯公司製之MLB-211,液溫:75℃,處理時間:15分鐘)、使用過錳酸鉀之鹼性水溶液進行之氧化處理(氧化處理液:羅門哈斯公司製之MLB-213,液溫:80℃,處理時間:15分鐘)、中和處理(中和處理液:羅門哈斯公司製之MLB-216,液溫:40℃,處理時間:15分鐘)之各處理,隨後進行水洗、乾燥後,藉由剖面觀察測定厚度。 Degreasing step: First, in the desmear step, the swelling treatment (swelling liquid: MLB-211 manufactured by Rohm and Haas Company, liquid temperature: 75 ° C, treatment time: 15 minutes), oxidation treatment using an alkaline aqueous solution of potassium permanganate (oxidation treatment liquid: MLB-213 manufactured by Rohm and Haas Company) , liquid temperature: 80 ° C, treatment time: 15 minutes), neutralization treatment (neutralization treatment liquid: MLB-216 manufactured by Rohm and Haas Company, liquid temperature: 40 ° C, treatment time: 15 minutes), followed by treatment After washing with water and drying, the thickness was measured by cross-sectional observation.

微蝕刻步驟:接著,於微蝕刻步驟中,將經去膠渣步驟後之各 貼銅積層板於硫酸-過氧化氫系蝕刻液(三菱瓦斯化學股份有限公司製之CPE800)中,於液溫30℃之條件,浸漬60秒,進行水洗、乾燥後,藉由剖面觀察測定厚度。又,剖面觀察係使用KEYENCE股份有限公司製之VE-9800。 Micro-etching step: next, in the micro-etching step, each after the desolding step The copper-clad laminate was immersed in a sulfuric acid-hydrogen peroxide-based etching solution (CPE800, manufactured by Mitsubishi Gas Chemical Co., Ltd.) at a liquid temperature of 30 ° C for 60 seconds, washed with water, and dried, and the thickness was measured by cross-sectional observation. . Further, the cross-sectional observation was performed using VE-9800 manufactured by KEYENCE Co., Ltd.

2.評價結果 2. Evaluation results

(1)雷射開孔加工性之評價 (1) Evaluation of laser hole drilling processability

表1中,顯示對各貼銅積層板以上述加工條件形成通孔時之頂端 直徑。此處,所謂頂端直徑係如圖2(b)所示,表示通孔之開口直徑。如表1所示,實施例與比較例2及比較例3所製作之貼銅積層板係以含有錫之電解銅-錫合金層作為最外層,對該電解銅-錫合金層照射雷射光,因此在未實施黑化處理等之為了提高雷射光吸收率之前處理的情況下,經確認可藉由雷射加工進行開孔。且,關於比較例1所製作之貼銅積層板,經確認因無法藉由雷射加工直接開孔,故若不實施黑化處理等之任何用以提高雷射光吸收率之前處理,則無法藉由雷射加工形成微通孔。 In Table 1, the top of each of the copper-clad laminates is formed by the above-mentioned processing conditions. diameter. Here, the tip diameter is the opening diameter of the through hole as shown in Fig. 2(b). As shown in Table 1, in the copper-clad laminate produced in the examples and the comparative examples 2 and 3, the electrolytic copper-tin alloy layer containing tin was used as the outermost layer, and the electrolytic copper-tin alloy layer was irradiated with laser light. Therefore, in the case where the blackening treatment or the like is not performed before the laser light absorption rate is increased, it is confirmed that the opening can be performed by laser processing. Further, since the copper-clad laminate produced in Comparative Example 1 was confirmed to be directly openable by laser processing, it was impossible to borrow any treatment for improving the laser light absorption rate without performing blackening treatment or the like. Microvias are formed by laser processing.

另一方面,於比較例3之電解銅箔之情況,微通孔之頂端直徑為 99.5μm,若僅考慮頂端直徑,則比較例3之電解銅箔具有與實施例及比較例2同等之雷射開孔加工性。然而,比較例3之電解銅箔於其表面具備將以無電解鍍敷法形成之金屬錫層藉由熱擴散,而使銅與錫相互擴散而得之擴散合金層。該擴散合金層於厚度方向之錫分佈不均一,越靠近表面錫分佈變越多。因此,認為對該擴散合金層照射雷射光時,容易使熔點低的錫熔融而發生污物,而使附著於通孔周圍之污物量變多。因此,藉由微蝕刻步驟等無法充分去除孔周圍之污物,於微蝕刻步驟後污物亦會以突起部殘存於孔周圍。此情況下,欲藉由無電解鍍敷步驟實現層間連接時,會有於該突起部引起異常析出之可能性,故而欠佳。 On the other hand, in the case of the electrolytic copper foil of Comparative Example 3, the diameter of the tip end of the micro-through hole was 99.5 μm, the electrolytic copper foil of Comparative Example 3 had the same laser opening workability as those of the Example and the Comparative Example 2, considering only the tip diameter. However, the electrolytic copper foil of Comparative Example 3 has a diffusion alloy layer obtained by mutually diffusing copper and tin by thermally diffusing a metal tin layer formed by electroless plating. The diffusion alloy layer has a non-uniform distribution of tin in the thickness direction, and the distribution closer to the surface tin becomes more. Therefore, when the diffused alloy layer is irradiated with the laser light, it is considered that the tin having a low melting point is easily melted to cause dirt, and the amount of the dirt adhering to the periphery of the through hole is increased. Therefore, the dirt around the hole cannot be sufficiently removed by the micro-etching step or the like, and the dirt remains in the periphery of the hole after the micro-etching step. In this case, when the interlayer connection is to be realized by the electroless plating step, the protrusion portion may be abnormally precipitated, which is not preferable.

(2)銅箔厚度之偏差評價 (2) Evaluation of the deviation of copper foil thickness

接著,圖3中顯示實施例與比較例1之貼銅積層板之剖面之FIB- SIM影像。如圖3所示,實施例所製作之貼銅積層板係於2μm厚之電解銅箔層上具備0.7μm之電解銅-錫合金層。對於該貼銅積層板,如上述,進行去膠渣步驟時,電解銅-錫合金層表面會溶解,電解銅-錫合金層之厚度減少0.21μm。接著,對該貼銅積層板,如上述,實施微蝕刻步驟時,電解銅-錫合金層之表面會溶解,電解銅-錫合金層之厚度減少0.38μm。如此,電解銅-錫合金層於去膠渣步驟及微蝕刻步驟之際雖被溶解,但因存在該電解銅-錫合金層,銅箔厚度並未變化,而可維持最初厚度(2μm)。相對於此,比較例1所製作之貼銅積層板係於電解銅箔上未具備電解銅-錫合金層,故於去膠渣步驟之際,厚度減少0.10μm,於微蝕刻步驟之際厚度減少1.03μm。且,實施例中,電解銅-錫合金層中之錫含量為27.5質量%,如圖1所示,與不含錫之電解銅箔比較時,蝕刻速度較慢。因此,比較例1之貼銅積層板與實施例之貼銅積層板比較時,蝕刻量亦變大,於銅箔厚度產生偏差之疑慮變高。 Next, FIG. 3 shows the FIB of the cross section of the copper-clad laminate of the embodiment and the comparative example 1. SIM image. As shown in Fig. 3, the copper-clad laminate produced in the examples was provided with an electrolytic copper-tin alloy layer of 0.7 μm on a 2 μm-thick electrolytic copper foil layer. With respect to the copper-clad laminate, as described above, when the desmear step is performed, the surface of the electrolytic copper-tin alloy layer is dissolved, and the thickness of the electrolytic copper-tin alloy layer is reduced by 0.21 μm. Next, when the micro-etching step is performed on the copper-clad laminate, the surface of the electrolytic copper-tin alloy layer is dissolved, and the thickness of the electrolytic copper-tin alloy layer is reduced by 0.38 μm. As described above, the electrolytic copper-tin alloy layer is dissolved in the desmear step and the microetching step, but the thickness of the copper foil does not change due to the presence of the electrolytic copper-tin alloy layer, and the initial thickness (2 μm) can be maintained. On the other hand, the copper-clad laminate produced in Comparative Example 1 does not have an electrolytic copper-tin alloy layer on the electrolytic copper foil, so the thickness is reduced by 0.10 μm at the time of the desmear step, and the thickness is small at the time of the micro-etching step. Reduced by 1.03μm. Further, in the examples, the tin content in the electrolytic copper-tin alloy layer was 27.5% by mass, and as shown in Fig. 1, the etching rate was slower when compared with the electroless copper foil containing no tin. Therefore, when the copper-clad laminate of Comparative Example 1 is compared with the copper-clad laminate of the embodiment, the etching amount is also increased, and the degree of variation in the thickness of the copper foil is increased.

另一方面,圖示雖省略,但比較例2之貼銅積層板具備錫含量為 12.9質量%之電解銅-錫合金層,如圖1所示,該電解銅-錫合金層之蝕刻速度比不含有錫之電解銅箔的蝕刻速度快。因此,比較例2之貼銅積層板雖於電解銅箔層表面具備電解銅-錫合金層,但於去膠渣步驟中蝕刻量增大為0.20μm,微蝕刻步驟中之蝕刻量增大為1.25μm,該情況下電解銅箔層之表面亦溶解,電解銅箔層之厚度可能產生偏差。 On the other hand, although the illustration is omitted, the copper-clad laminate of Comparative Example 2 has a tin content of 12.9 mass% of the electrolytic copper-tin alloy layer, as shown in Fig. 1, the electrolytic copper-tin alloy layer is etched faster than the electrolytic copper foil containing no tin. Therefore, the copper-clad laminate of Comparative Example 2 has an electrolytic copper-tin alloy layer on the surface of the electrolytic copper foil layer, but the etching amount is increased to 0.20 μm in the desmear step, and the etching amount in the micro-etching step is increased to 1.25 μm, in which case the surface of the electrolytic copper foil layer is also dissolved, and the thickness of the electrolytic copper foil layer may vary.

且,比較例3所製作之貼銅積層板中,由於以錫-銅作為主體之擴 散合金層如上述具有錫層與錫銅擴散合金層之兩層構成,因此金屬錫層與錫銅擴散層分別對於各蝕刻液之蝕刻速度不同。尤其,成為最外層之金屬錫層以對於銅箔之一般蝕刻處理液係難以溶解(參考圖1)。因此,去膠渣步驟及微蝕刻步驟後之蝕刻量合計較少而為0.05μm,雖可作為蝕刻抗蝕劑層發揮作用,但於其後的配線圖案形成後之快速蝕刻步驟中,難以藉由蝕刻去除種晶層。且,於該銅箔,認為金屬錫層、錫銅擴散合金層、電解銅箔層之各層中之蝕刻速度不同,難以於厚度方向均一蝕刻。再者,使用對於銅箔之一般蝕刻處理液時,相較於成為最外層之金屬錫層,藉由電解銅鍍敷所形成之配線圖案部之蝕刻速度變快。因此,蝕刻因子降低,難以以良好線寬形成配線圖案。 Moreover, in the copper-clad laminate produced in Comparative Example 3, the expansion was mainly made of tin-copper. Since the scattered alloy layer has two layers of a tin layer and a tin-copper diffusion alloy layer as described above, the metal tin layer and the tin-copper diffusion layer have different etching rates for the respective etching liquids. In particular, the metal tin layer which becomes the outermost layer is hardly dissolved in the general etching treatment liquid system for copper foil (refer FIG. 1). Therefore, the etching amount after the desmear step and the micro-etching step is as small as 0.05 μm, and although it can function as an etching resist layer, it is difficult to borrow in the rapid etching step after the formation of the subsequent wiring pattern. The seed layer is removed by etching. Further, in the copper foil, it is considered that the etching rates in the respective layers of the metallic tin layer, the tin-copper diffusion alloy layer, and the electrolytic copper foil layer are different, and it is difficult to uniformly etch in the thickness direction. Further, when a general etching treatment liquid for a copper foil is used, the etching speed of the wiring pattern portion formed by electrolytic copper plating is faster than that of the metal tin layer serving as the outermost layer. Therefore, the etching factor is lowered, and it is difficult to form the wiring pattern with a good line width.

相對於此,依據實施例之貼銅積層板,去膠渣步驟及微蝕刻步 驟中,由於可溶解去除電解銅-錫合金層,故於去除種晶層時,只要去除電解銅箔層與形成於該電解銅箔層上之無電解鍍敷被膜即可。又因此等皆為銅層,故於蝕刻速度上未有太大差異。而且,藉由電解銅鍍敷所形成之配線圖案部之蝕刻速度亦未呈現太大差異。因此,依據本發明之雷射加工用銅箔,可以良好的蝕刻因子形成配線圖案。 In contrast, the copper-clad laminate according to the embodiment, the desmear step and the micro-etching step In the step, since the electrolytic copper-tin alloy layer is dissolved and removed, when the seed layer is removed, the electrolytic copper foil layer and the electroless plating film formed on the electrolytic copper foil layer may be removed. Therefore, all of them are copper layers, so there is not much difference in etching speed. Moreover, the etching speed of the wiring pattern portion formed by electrolytic copper plating did not show much difference. Therefore, according to the copper foil for laser processing of the present invention, the wiring pattern can be formed with a good etching factor.

產業上之可利用性 Industrial availability

藉由使用如上述之本發明的雷射加工用銅箔,其雷射加工性優異,且於其後之蝕刻處理中,可獲得於厚度方向之均一蝕刻速度。而且,可使用二氧化碳氣體雷射,進行貼銅積層板之雷射加工用銅箔的直接開孔,變得不需要用以提高雷射光吸收效率之黑化處理等之前處理,而可削減步驟並可削減總體製造成本。再者,電解銅-錫合金層由於可發揮作為蝕刻抗蝕劑之功能,因此於配線圖案形成前之各種蝕刻步驟中,可防止銅箔表面溶解、防止銅箔厚度上產生偏差。另外,去除種晶層時,僅使銅箔部分溶解去除即可,因此可藉良好蝕刻因子形成配線圖案。 By using the copper foil for laser processing of the present invention as described above, the laser processing property is excellent, and in the subsequent etching treatment, a uniform etching rate in the thickness direction can be obtained. Further, by using a carbon dioxide gas laser, direct opening of the copper foil for laser processing of the copper-clad laminate can be performed, and the pre-treatment such as blackening treatment for improving the laser light absorption efficiency can be eliminated, and the steps can be reduced. Can reduce overall manufacturing costs. Further, since the electrolytic copper-tin alloy layer functions as an etching resist, it is possible to prevent the surface of the copper foil from being dissolved and to prevent variations in the thickness of the copper foil in various etching steps before the formation of the wiring pattern. Further, when the seed layer is removed, only the copper foil portion is dissolved and removed, so that the wiring pattern can be formed by a good etching factor.

Claims (8)

一種雷射加工用銅箔,其特徵係於銅箔表面設有可吸收紅外線雷射光之難溶性雷射吸收層,該難溶性雷射吸收層具有對銅蝕刻液之蝕刻性,並且其蝕刻速度比銅箔慢;其中,前述難溶性雷射吸收層係錫含量為25質量%以上且50質量%以下之電解銅-錫合金層。 A copper foil for laser processing, characterized in that a surface of a copper foil is provided with a poorly soluble laser absorbing layer capable of absorbing infrared laser light, the poorly soluble laser absorbing layer having an etching property to a copper etching solution, and an etching rate thereof The hardly soluble laser absorbing layer is an electrolytic copper-tin alloy layer having a tin content of 25% by mass or more and 50% by mass or less. 如請求項1之雷射加工用銅箔,其中前述難溶性雷射吸收層係利用電解鍍敷法形成之電解銅-錫合金層。 The copper foil for laser processing according to claim 1, wherein the poorly soluble laser absorbing layer is an electrolytic copper-tin alloy layer formed by electrolytic plating. 如請求項1之雷射加工用銅箔,其中前述難溶性雷射吸收層之厚度為3μm以下。 The copper foil for laser processing according to claim 1, wherein the thickness of the poorly soluble laser absorption layer is 3 μm or less. 如請求項1之雷射加工用銅箔,其中前述銅箔之厚度為7μm以下。 The copper foil for laser processing according to claim 1, wherein the copper foil has a thickness of 7 μm or less. 如請求項1之雷射加工用銅箔,其中前述銅箔之另一表面上具有粗化物理層及底塗樹脂層中之至少一層。 The copper foil for laser processing according to claim 1, wherein the other surface of the copper foil has at least one of a roughened physical layer and a primer resin layer. 一種具有載體箔之雷射加工用銅箔,其特徵係於如請求項1之雷射加工用銅箔之前述難溶性雷射吸收層上可剝離地具備載體箔。 A copper foil for laser processing having a carrier foil, characterized in that the carrier foil is peelably provided on the poorly soluble laser absorbing layer of the copper foil for laser processing according to claim 1. 一種貼銅積層體,其特徵係以於前述紅外線雷射光所照射之側配置前述難溶性雷射吸收層之方式,積層如請求項1之雷射加工用銅箔與絕緣層構成材料而成。 A copper-clad laminate is characterized in that the poorly-soluble laser absorbing layer is disposed on a side irradiated with the infrared laser light, and the copper foil for laser processing of claim 1 and a material of an insulating layer are laminated. 一種印刷配線板之製造方法,其特徵係對具有對銅蝕刻液之蝕刻性並且其蝕刻速度比銅箔慢、而且於銅箔表面具備可吸收紅外線雷射光之雷射吸收層之雷射加工用銅箔與其他導體層透過絕緣層積層而成之積層體,對難溶性雷射吸收層直接照射紅外線雷射光,而形成層間連接用通孔,於去除通孔內之膠渣之去 膠渣步驟及/或作為無電解鍍敷之前處理之微蝕刻步驟中,自該銅箔表面去除該難溶性雷射吸收層;其中,前述難溶性雷射吸收層係錫含量為25質量%以上且50質量%以下之銅-錫合金層。 A method for producing a printed wiring board, characterized in that it is used for laser processing having a absorbing property for a copper etching solution and having an etching rate slower than that of a copper foil and having a laser absorbing layer capable of absorbing infrared laser light on a surface of a copper foil a laminate formed by laminating copper foil and other conductor layers through an insulating layer, and directly irradiating the insoluble laser absorbing layer with infrared laser light to form a through hole for interlayer connection, thereby removing the slag in the through hole. The poorly soluble laser absorbing layer is removed from the surface of the copper foil in the step of slag and/or as a micro-etching step before the electroless plating; wherein the poorly soluble laser absorbing layer has a tin content of 25% by mass or more And a copper-tin alloy layer of 50% by mass or less.
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