TW202014076A - Multilayer wiring board manufacturing method - Google Patents
Multilayer wiring board manufacturing method Download PDFInfo
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- TW202014076A TW202014076A TW108111453A TW108111453A TW202014076A TW 202014076 A TW202014076 A TW 202014076A TW 108111453 A TW108111453 A TW 108111453A TW 108111453 A TW108111453 A TW 108111453A TW 202014076 A TW202014076 A TW 202014076A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/429—Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
Abstract
Description
本發明係有關於多層配線板的製造方法。The present invention relates to a method of manufacturing a multilayer wiring board.
近年,為了提升印刷配線板的實裝密度並小型化,廣泛地進行印刷配線板的多層化。這種多層印刷配線板,在多種攜帶用電子機器中,以輕量化及小型化作為目的被利用。接著,該多層印刷配線板,要求層間絕緣層厚度的更加降低、及作為配線板的更薄型化及輕量化。In recent years, in order to increase the mounting density and size reduction of printed wiring boards, multilayering of printed wiring boards has been widely carried out. Such a multilayer printed wiring board is used in various portable electronic devices for the purpose of weight reduction and miniaturization. Next, this multilayer printed wiring board requires a further reduction in the thickness of the interlayer insulating layer, and thinner and lighter weight as a wiring board.
作為滿足這種要求的技術,採用利用無芯積層法的多層印刷配線板的製造方法。無芯積層法為不利用所謂的核芯基板,而將絕緣層與配線層交互層積(積層)而多層化的方法。在無芯積層法,為了使支持體與多層印刷配線板的剝離能容易進行,提案使用附載體金屬箔。例如,專利文獻1(特許第4460013號公報)揭示:在附載體金屬箔的金屬箔側將絕緣層及厚度18μm的金屬層依序層積,加工金屬層形成內層電路(第1導體圖案),在內層電路又將絕緣層及金屬箔再依序層積,將載體剝離而形成在內層電路的兩面側具備金屬箔的基板之後,將基板兩面的金屬箔與內層電路通過孔電連接的配線基板的製造方法。又,專利文獻1也揭示:從基板的兩面進行雷射加工形成各個貫通金屬箔及絕緣層到達內層電路的通孔,對基板兩面的金屬箔以乾薄膜施予圖案化之後,藉由電鍍將通孔鍍膜金屬填充,並將外層電路(導體圖案)形成於基板的兩面。 [先前技術文獻] [專利文獻]As a technique for satisfying such requirements, a method of manufacturing a multilayer printed wiring board using a coreless build-up method is adopted. The coreless build-up method is a method in which an insulating layer and a wiring layer are alternately laminated (laminated) without using a so-called core substrate, and the method is multilayered. In the coreless build-up method, in order to facilitate the peeling of the support from the multilayer printed wiring board, it is proposed to use a metal foil with a carrier. For example, Patent Document 1 (Patent No. 4460013) discloses that an insulating layer and a metal layer with a thickness of 18 μm are sequentially stacked on the metal foil side of a metal foil with a carrier, and the metal layer is processed to form an inner layer circuit (first conductor pattern) , Insulating layer and metal foil are sequentially laminated in the inner layer circuit, the carrier is peeled off to form a substrate with metal foil on both sides of the inner layer circuit, and then the metal foil on both sides of the substrate and the inner layer circuit are passed through the holes A method of manufacturing a connected wiring board. In addition, Patent Document 1 also discloses that laser processing is performed from both sides of the substrate to form each through hole that penetrates the metal foil and the insulating layer to the inner layer circuit, and after patterning the metal foil on both sides of the substrate with a dry film, by plating The through-hole plated metal is filled, and outer-layer circuits (conductor patterns) are formed on both sides of the substrate. [Prior Technical Literature] [Patent Literature]
[專利文獻1]特許第4460013號公報 [專利文獻2]特許第3142270號公報[Patent Document 1] Patent No. 4460013 [Patent Document 2] Patent No. 3142270
近年,隨著對多層印刷配線板更加要求的薄型化,用於多層配線板的電路的金屬箔的厚度也跟著降低。關於此點,在記載於專利文獻1的那種配線基板的製造中,也期望使用極薄化的金屬箔。不過,將既存的超薄銅箔(例如厚度6μm以上12μm以下)作為電路(例如內層電路)時,有在形成層間連接用的通孔的工程中,因雷射加工不只是兩面(外層)的金屬箔及絕緣層也貫通到電路而產生孔的問題。例如,專利文獻2(特許第3142270號公報)揭示:關於附內層電路基板,內層電路的厚度未滿外層銅箔的厚度的4.5倍時(換言之外層銅箔的厚度T2 相對於內層電路的厚度T1 之比T2 /T1 未滿1/4.5(=0.22)時),進行雷射照射所致的鑽孔時,會有產生內層電路的損傷等危險。In recent years, the thickness of metal foils used for circuits of multilayer wiring boards has also decreased as the thickness of multilayer printed wiring boards has become thinner. In this regard, it is also desirable to use extremely thin metal foils in the manufacture of the wiring substrates described in Patent Document 1. However, when an existing ultra-thin copper foil (for example, 6 μm or more and 12 μm or less) is used as a circuit (for example, an inner layer circuit), there are not only two sides (outer layer) due to laser processing in the process of forming a through hole for interlayer connection The metal foil and insulating layer also penetrated into the circuit and caused holes. For example, Patent Document 2 (Patent No. 3142270) discloses that when the thickness of the inner-layer circuit is less than 4.5 times the thickness of the outer-layer copper foil with respect to the inner-layer circuit board (in other words, the thickness T 2 of the outer-layer copper foil relative to the inner layer When the thickness T 1 of the circuit is T 2 /T 1 less than 1/4.5 (=0.22), there is a risk of damage to the inner layer circuit when drilling holes due to laser irradiation.
本發明者們現今得到藉由將具備波長10.6μm的雷射的反射率及峰的頂點密度Spd滿足預定條件的特定面的配線層作為電路(例如內層電路)使用而進行多層配線板的製造,即便將電路極薄化時,電路密著性也佳,且能極有效地防止雷射加工造成的該電路的貫通的見解。The present inventors have obtained a multilayer wiring board by using a wiring layer having a specific surface satisfying predetermined conditions as a reflectance of a laser with a wavelength of 10.6 μm and a peak vertex density Spd as a circuit (for example, an inner layer circuit). Even when the circuit is extremely thin, the circuit has good adhesion and can effectively prevent the penetration of the circuit caused by laser processing.
因此,本發明的目的提供一種多層配線板的製造方法,即便將電路極薄化時,電路密著性也佳,且能極有效地防止雷射加工造成的該電路的貫通。Therefore, an object of the present invention is to provide a method for manufacturing a multilayer wiring board, which has excellent circuit adhesion even when the circuit is extremely thinned, and can effectively prevent penetration of the circuit due to laser processing.
根據本發明的一態樣,提供一種多層配線板的製造方法,具備: (a)準備具備金屬箔、設於該金屬箔上的絕緣層、及設於該絕緣層的與前述金屬箔相反側的面的第1配線層的層積體的工程; (b)對前述層積體從前述金屬箔的表面施予雷射加工,形成貫通前述金屬箔及前述絕緣層到達前述第1配線層的通孔的工程; (c)對前述層積體的形成前述通孔之側施予鍍膜及圖案化,形成包含前述第1配線層、及由前述金屬箔而來的第2配線層的多層配線板的工程; 其中, 前述第1配線層的至少與前述金屬箔對向的面,藉由傅立葉轉換紅外分光光度計(FT-IR)測定的波長10.6μm的雷射的反射率為80%以上,且以ISO25178為準據測定的峰的頂點密度Spd為7000個/mm2 以上15000個/mm2 以下; 前述金屬箔的厚度T2 相對於前述第1配線層的厚度T1 之比T2 /T1 為0.23以上。According to one aspect of the present invention, there is provided a method for manufacturing a multilayer wiring board, comprising: (a) preparing a metal foil, an insulating layer provided on the metal foil, and an opposite side of the metal foil provided on the insulating layer The construction of the laminate of the first wiring layer on the surface of the surface; (b) laser processing is performed on the laminate from the surface of the metal foil to form a layer that penetrates the metal foil and the insulating layer to reach the first wiring layer Through-hole engineering; (c) Applying coating and patterning to the side of the laminate where the through-hole is formed to form a multilayer wiring including the first wiring layer and the second wiring layer from the metal foil The construction of the board; wherein, at least the surface of the first wiring layer opposite to the metal foil has a reflectivity of 80% or more of the laser with a wavelength of 10.6 μm measured by a Fourier transform infrared spectrophotometer (FT-IR) and the vertex of the peak density Spd subject data measured ISO25178 of 7000 / mm 2 or more than 15,000 / mm 2 or less; the thickness T 2 of the metal foil relative to the thickness of the first wiring layer T 1 of the ratio T 2 /T 1 is 0.23 or more.
定義 用來特定本發明的參數的定義如以下所示。definition The definitions of the parameters used to specify the present invention are shown below.
本說明書中「波長10.6μm的雷射的反射率」指的是藉由傅立葉轉換紅外光度計(FT-IR)測定的將波長10.6μm的雷射照射試料(金屬箔)表面時的相對於被基準板(例如Au蒸鍍反射鏡)反射的光的量的被試料反射的光的量之比例。波長10.6μm的雷射的反射率的測定,能使用市售的傅立葉轉換紅外光度計,依照本說明書的實施例記載的諸條件進行。此外,因為在雷射加工典型使用的二氧化碳雷射的波長為10.6μm,將傅立葉轉換紅外光度計的雷射波長設為10.6μm。In this manual, "reflectance of laser with a wavelength of 10.6 μm" refers to the measurement of the surface of a sample (metal foil) with a wavelength of 10.6 μm when irradiated by a Fourier transform infrared photometer (FT-IR). The ratio of the amount of light reflected by the reference plate (for example, Au vapor deposition mirror) to the amount of light reflected by the sample. The measurement of the reflectance of the laser with a wavelength of 10.6 μm can be performed using a commercially available Fourier conversion infrared photometer under the conditions described in the examples of this specification. In addition, since the wavelength of carbon dioxide laser typically used in laser processing is 10.6 μm, the laser wavelength of the Fourier conversion infrared photometer is set to 10.6 μm.
本說明書中「峰的頂點密度Spd」指的是以ISO25178為準據測定的表示每單位面積的峰頂點之數的參數。該值越大暗示與其他物體的接觸點之數越多。峰的頂點密度Spd能夠藉由將在金屬箔乃至配線層表面的預定測定面積(例如107μm×143μm的區域)的表面輪廓以市售的雷射顯微鏡測定來算出。In this specification, "peak apex density Spd" refers to a parameter indicating the number of peak apexes per unit area measured based on ISO25178. The larger the value, the greater the number of contact points with other objects. The peak apex density Spd can be calculated by measuring the surface profile of a predetermined measurement area (for example, a region of 107 μm×143 μm) on the surface of the metal foil or the wiring layer with a commercially available laser microscope.
多層配線板的製造方法 本發明係有關於多層配線板的製造方法。本發明的方法包含:(1)層積體的準備、(2)通孔的形成、及(3)第2配線層的形成的各工程。Manufacturing method of multilayer wiring board The present invention relates to a method of manufacturing a multilayer wiring board. The method of the present invention includes: (1) preparation of a laminate, (2) formation of through holes, and (3) formation of a second wiring layer.
以下,參照圖1,說明關於工程(1)~(3)的各者。Hereinafter, each of the processes (1) to (3) will be described with reference to FIG. 1.
(1)層積體的準備
準備具備金屬箔10、設於金屬箔10上的絕緣層12、及設於絕緣層12的與金屬箔10相反側的面的第1配線層14的層積體16。該層積體16典型為在上述無芯積層法等的多層配線板的製造方法中,相當於將支持體剝離前的中間製品者。例如,如圖1(i)所示,層積體16為在第1配線層14側(亦即與金屬箔10相反側)的面再層積絕緣層12’的形態也可以。此時,第1配線層14成為埋入絕緣層12及絕緣層12’間成為內層電路。或者,層積體16是在第1配線層14側之面隔介著絕緣層12’再層積乃至形成金屬箔或配線層(圖未示)的形態(例如在兩面具備金屬箔的形態)也可以。又,第1配線層14設於絕緣層12內也可以。無論如何,層積體16至少具備金屬箔10、絕緣層12及第1配線層14即可,關於其他的層構成並沒有特別限定。(1) Preparation of
金屬箔10可以是採用於配線層用金屬箔的公知的構成。例如,金屬箔10可以是藉由無電鍍法及電鍍法等濕式等成膜法、濺鍍及化學蒸鍍等乾式成膜法、或組合該等方法形成者。作為金屬箔10之例可以是鋁、銅箔、不銹鋼(SUS)箔、鎳箔等、較佳為銅箔。銅箔不管是壓延銅箔或電解銅箔都可以。The
金屬箔10以附載體金屬箔的形態提供也可以。附載體金屬箔典型依序具備載體(圖未示)、剝離層(圖未示)、及金屬箔10。載體為用以將金屬箔10支持並使其處理性提升的箔乃至層。作為載體的較佳例,可以是鋁、銅箔、不銹鋼(SUS)箔、樹脂薄膜、將表面以銅等進行金屬塗佈的樹脂薄膜、樹脂板、玻璃板、及其等的組合。載體的厚度典型為5μm以上250μm以下、較佳為9μm以上200μm以下。又,剝離層只要是使載體的剝離成為可能的層,材質則沒有特別限定。例如,剝離層可以由作為附載體金屬箔的剝離層採用的公知材料構成。剝離層可以是有機剝離層及無機剝離層的任一者、也可以是有機剝離層與無機剝離層的複合剝離層。剝離層的厚度典型為1nm以上1μm以下、較佳為5nm以上500nm以下、更佳為6nm以上100nm以下。金屬箔10以附載體金屬箔的形態提供時,在後述的對金屬箔10的雷射加工前,將載體從層積體16剝離較佳。藉此,在後述的通孔的形成工程中,能從金屬箔10施予雷射加工。The
層積體16其單面貼附至預浸物等的支持體(圖未示)而附加剛性也可以。預浸物為合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等基材浸於合成樹脂的複合材料之總稱。此時,在支持體的兩面將附載體金屬箔以上下對稱的方式貼附,在得到的附支持體暫層積體的兩面以呈上下對稱的方式形成層積體16,之後將支持體與載體一同除去較佳。例如,在支持體貼附具備金屬箔10的附載體金屬箔,在金屬箔10上依序層積乃至形成絕緣層12及第1配線層14而能成為層積體16。或者,在支持體貼附具備與金屬箔10不同的金屬箔的附載體金屬箔,在該金屬箔上依序層積乃至形成第1配線層14、絕緣層12及金屬箔10而能成為層積體16。藉此,本發明準備的層積體16也可以是先層積乃至形成金屬箔10及第1配線層14的任一者而製作者。The laminated
絕緣層12可以是採用於無芯積層法的絕緣層的公知的構成,沒有特別的限定。例如,絕緣層12更佳能藉由將預浸物及樹脂片等絕緣樹脂材料在金屬箔10上層積之後,施予熱間壓印成形而形成。作為含浸於使用的預浸物的絕緣性樹脂較佳的例子,可以是環氧樹脂、氰酸酯樹脂、雙馬來酰亞胺三嗪樹脂(BT樹脂)、聚苯醚樹脂、酚醛樹脂等。又,作為構成樹脂片的絕緣性樹脂較佳的例子,可以是環氧樹脂、聚酰亞胺樹脂、聚酯纖維樹脂等。再來,從對絕緣層12提升絕緣性等的觀點來看,也可以含有由二氧化矽、氧化鋁等各種無機粒子構成的填料粒子等。絕緣層12的厚度雖沒有特別限定,但較佳為1μm以上100 μm以下、更佳為5μm以上40μm以下、再佳為10μm以上30 μm以下。絕緣層12也可以由複數的層構成。此外,如圖1(i)所示,層積體16包含絕緣層12’時,絕緣層12’的構成準用絕緣層12即可,上述絕緣層12的較佳態樣也套用於絕緣層12’。The
第1配線層14,例如,能藉由在絕緣層12或絕緣層12’上層積第1配線層用金屬箔,在該第1配線層用金屬箔施予圖案化來較佳地形成。或者,第1配線層14藉由在與金屬箔10不同的金屬箔上利用金屬鍍膜等施予圖案化來較佳地形成也可以。第1配線層用金屬箔可以是藉由無電鍍法及電鍍法等濕式等成膜法、濺鍍及化學蒸鍍等乾式成膜法、或組合該等方法形成者。作為第1配線層用金屬箔之例可以是鋁箔、銅箔、不銹鋼(SUS)箔等、較佳為銅箔。銅箔不管是壓延銅箔或電解銅箔都可以。第1配線層用金屬箔的較佳厚度為0.1μm以上12μm以下、更佳為1μm以上9μm以下、再佳為5μm以上7μm以下。若在該範圍內,進行微細電路形成極為適合。用來形成第1配線層14的圖案化藉田減法製程法、MSAP(改良的半加成法(modified-semi-additive process))法、SAP(半加成)法等的公知的手法進行即可,沒有特別限定。在第1配線層14上層積絕緣層12或絕緣層12’時,預先在第1配線層14施序內層處理也可以。內層處理包含CZ處理等粗糙化處理較佳、CZ處理使用有機酸系微蝕刻劑(例如MEC股份公司製,產品號CZ-8101),在第1配線層14表面施予微細粗糙化能更佳地進行。藉此,在第1配線層14表面形成微細凹凸,能夠使與之後層積的絕緣層的密著性提升。The
第1配線層14的至少與金屬箔10對向的面,藉由傅立葉轉換紅外分光光度計(FT-IR)測定的波長10.6 μm的雷射的反射率為80%以上,且以ISO25178為準據測定的峰的頂點密度Spd為7000個/mm2
以上15000個/mm2
以下。藉由將滿足這種條件的配線層作為電路(例如內層電路)使用而進行多層配線板的製造,電路密著性佳,且能極有效地防止雷射加工造成的該電路的貫通。At least the surface of the
亦即,藉由將第1配線層14的與金屬箔10對向的面中藉由傅立葉轉換紅外分光光度計測定的波長10.6 μm的雷射的反射率設為80%以上,能有效地阻礙用於通孔形成的雷射光的吸收。其結果,即便在將第1配線層14超薄化時(亦即使金屬箔10的厚度T2
相對於第1配線層14的厚度T1
之比T2
/T1
大於0.23以上時),也能夠極為有效地防止該第1配線層14的雷射加工造成的貫通。該波長10.6μm的雷射反射率若第1配線層14的表面越平滑則越大。但是,為了增加雷射反射率而單純使第1配線層14的表面平滑時,第1配線層14與絕緣層12的密著性會降低,容易產生電路剝落。因此,兼顧雷射加工造成的電路的貫通防止、與電路密著性不是容易的。關於此點,在本發明中,在第1配線層14的與金屬箔10對向的面,藉由保持有助於波長10.6μm的雷射反射率提升的平滑性,同時將峰的頂點密度Spd設為7000個/mm2
以上15000個/mm2
以下,能夠以多的接點數確保第1配線層14的向絕緣層12的陷入。其結果,在確保高電路密著性的同時,能極有效地防止雷射加工造成的內層電路的貫通。That is, by setting the reflectance of the laser beam of the wavelength 10.6 μm measured by the Fourier transform infrared spectrophotometer on the surface of the
從上述觀點來看,第1配線層14的與金屬箔10對向的面,藉由傅立葉轉換紅外分光光度計(FT-IR)測定的波長10.6μm的雷射的反射率為80%以上、較佳為85%以上、更佳為90%以上、再佳為95%以上。上限值沒有特別的限定,雖可以是100%但典型為98%以下。又,第1配線層14的與金屬箔10對向的面,以ISO25178為準據測定的峰的頂點密度Spd為7000個/mm2
以上15000個/mm2
以下、較佳為10000個/mm2
以上15000個/mm2
以下、更佳為13000 個/mm2
以上15000個/mm2
以下。在上述較佳的範圍內,在更加確保高電路密著性的同時,能極有效地防止雷射加工的第1配線層14的貫通。From the above viewpoint, the surface of the
第1配線層14的與金屬箔10對向的面中的上述範圍內的波長10.6μm的雷射反射率及峰的頂點密度Spd,讓形成第1配線層14的第1配線層用金屬箔的表面預先具備也可以,或者藉由上述的內層處理(例如CZ處理等的粗糙化處理)在第1配線層14的表面事後賦予也可以。因此,第1配線層14的與金屬箔10對向的面為粗化面較佳。此外,具有滿足上述諸條件的表面的第1配線層用金屬箔,能夠藉由在金屬箔表面以公知乃至所期望的條件施予粗糙化處理來實現。又,選擇性入手具有滿足上述諸條件的表面的市售的金屬箔也可以。On the surface of the
和第1配線層14的與金屬箔10對向的面一樣,第1配線層14的與金屬箔10相反側之面具有上述範圍內的波長10.6μm的雷射的反射率及峰的頂點密度Spd也可以。藉此,在能確保和在第1配線層14的與金屬箔10相反側層積的層(例如絕緣層12’)的高密著性的同時,從層積體16的與金屬箔10相反側的表面施予雷射加工時,也能夠防止第1配線層14的貫通。Similar to the surface of the
金屬箔10的厚度T2
相對於第1配線層14的厚度T1
之比T2
/T1
為0.23以上、較佳為0.25以上、更佳為0.30以上。如同上述,根據本發明,因為由第1配線層14具有難以吸收雷射光的表面,即便以滿足上述範圍的方式將第1配線層14極薄化,也能夠抑制第1配線層14的雷射加工造成的損傷。T2
/T1
較佳為1.0以下、更佳為0.50以下、再佳為0.33以下。 此外,施予雷射加工前對第1配線層14及/或金屬箔10進行表面處理(亦即使第1配線層14及/或金屬箔10的厚度變化)時,上述T1
及T2
分別指該表面處理後的第1配線層14的厚度及金屬箔10的厚度。例如,在第1配線層14施予上述內層處理時,T1
成為內層處理後的第1配線層14的厚度。The thickness T 2 of the
第1配線層14的厚度T1
較佳為2μm以上15μm以下、更佳為3μm以上12μm以下、再佳為5μm以上10μm以下、特佳為5μm以上8μm以下。若在該範圍內,對多層印刷配線板要求的薄型化極為有利。另一方面,金屬箔10的厚度T2
較佳為為0.5μm以上6μm以下、更佳為0.7μm以上4.0 μm以下、再佳為1.2μm以上3.0μm以下、特佳為1.5μm以上2.0μm以下。若在這種範圍內,在後述的通孔形成工程中,從金屬箔10進行直接雷射加工形成通孔18會變得容易。又,金屬箔10用於配線層的形成時,若在上述厚度的範圍內則對微細電路的形成性也佳。The thickness T 1 of the
(2)通孔的形成
如圖1(ii)所示,藉由對層積體16從金屬箔10的表面施予雷射加工,形成貫通金屬箔10及絕緣層12到達第1配線層14的通孔18。雷射加工雖然可以使用二氧化碳雷射、準分子雷射、UV雷射、YAG雷射等各種雷射,但使用二氧化碳雷射特佳。根據本發明的方法,因為第1配線層14具有難以吸收雷射光的表面,在通孔的形成工程中,能夠極有效地防止雷射加工造成的第1配線層14的貫通。尤其是即便為了使雷射加工有效率地進行而增加雷射的輸出密度時,根據本發明也難以產生第1配線層14的貫通。從該觀點來看,雷射加工中的雷射輸出密度較佳為8MW/cm2
以上14MW/cm2
以下、更佳為8MW/cm2
以上12MW/cm2
以下、再佳為9MW/cm2
以上12MW/cm2
以下。 因此,本發明中的通孔18,利用上述範圍內的輸出密度雷射,以1次射擊的雷射照射形成每1個通孔較佳。(2) Formation of through holes As shown in FIG. 1(ii), laser processing is performed on the laminate 16 from the surface of the
通孔18的直徑較佳為30μm以上80μm以下、更佳為30μm以上60μm以下、再佳為30μm以上40μm以下。 若在該範圍內,對多層印刷配線板的高密度化極為有利。又,為了形成具有上述那種小直徑的通孔18,縮小雷射的射束直徑(點徑)較佳。此時,因為雷射的能量容易集中於第1配線層14的雷射照射部分,本來就容易產生第1配線層14的貫通。關於該點,根據本發明的方法,因為第1配線層14具有難以吸收雷射光的表面,即便雷射的能量集中時,也能夠有效地防止第1配線層14的貫通。The diameter of the through
通孔的形成工程,作為除去在以雷射加工形成通孔時產生的通孔底部的樹脂殘渣(膠渣)的處理,更包含使用鉻酸鹽溶液及過錳酸鹽溶液的至少一者的除膠渣工程較佳。共面性工程為將膨潤處理、鉻酸處理或過錳酸處理、及還原處理這些處理依序進行的處理,能採用公知的濕式製程。作為鉻酸鹽之例可以是鉻酸鉀。作為過錳酸鹽之例,可以是過錳酸鈉、過錳酸鉀等。特別是從除膠渣處理液的環境負荷物質的排出降低、電解再生性等的點來看,使用過錳酸鹽較佳。The process of forming a through hole, as a treatment for removing the resin residue (rubber residue) at the bottom of the through hole generated when the through hole is formed by laser processing, further includes the use of at least one of a chromate solution and a permanganate solution The glue removal project is better. The coplanarity engineering is a treatment in which swelling treatment, chromic acid treatment, permanganic acid treatment, and reduction treatment are sequentially performed, and a well-known wet process can be used. An example of chromate may be potassium chromate. Examples of permanganate include sodium permanganate and potassium permanganate. In particular, it is preferable to use permanganate from the viewpoints of reduction of the discharge of environmental load substances from the scum removal treatment liquid, electrolytic regeneration, and the like.
(3)第2配線層的形成
如圖1(iii)所示,對層積體16的形成通孔18之側施予鍍膜及圖案化,形成包含第1配線層14、及由金屬箔10而來的第2配線層22的多層配線板24。藉此,在通孔18填充鍍膜金屬,第1配線層14與第2配線層22通過通孔18電連接。第2配線層22典型含有由金屬箔10而來的金屬,但作為僅接續金屬箔10的表面輪廓的新配線層(未包含由金屬箔10而來的金屬)形成也可以。關於第2配線層22的形成方法的工法並沒有特別限定,可以使用減法製程法、MSAP法、SAP法等的公知的手法。在這裡,圖1(iii)為藉由MSAP法進行電路形成者。作為MSAP法的電路形成的一例,首先在金屬箔10的表面將光阻(圖未示)以預定的圖案形成。光阻為感光性薄膜較佳,此時藉由曝光及顯像將預定的配線圖案賦予至光阻即可。接著,在金屬箔10的露出表面(亦即未被光阻層遮蔽的部分)、和通孔18形成電鍍層20。此時,因為在通孔18填充鍍膜金屬,第1配線層14與金屬箔10通過通孔18電連接。電鍍藉由公知的方法進行即可,沒有特別的限定。將光阻層剝離後,藉由將金屬箔10及電鍍層20進行蝕刻加工,能得到形成第2配線層22的多層配線板24。(3) Formation of the second wiring layer
As shown in FIG. 1(iii), the side of the
在多層配線板24上又再形成積層配線層也可以。亦即,藉由在多層配線板24上再將包含絕緣層與配線圖案的配線層交互層積配置,能夠得到形成到第n配線層(n為3以上的整數)為止的多層配線板。該工程的重複到形成所期望的層數的積層配線層為止即可。又,因應必要,在外層面形成焊料光阻、及柱等的實裝用的凸塊等也可以。
[實施例]A multilayer wiring layer may be formed on the
以下,利用實施例來更進一步說明本發明。Hereinafter, the present invention will be further described using examples.
例1~6 準備6種作為多層配線板的內層電路形成用的金屬箔使用的銅箔,進行各種評價。具體的順序如以下所示。Example 1~6 Six types of copper foils used as metal foils for forming inner layer circuits of a multilayer wiring board were prepared and various evaluations were conducted. The specific sequence is shown below.
(1)銅箔的準備 準備6種在至少一面具有表1所示的各參數的厚度9μm的電解銅箔。該等銅箔之中幾種為市售品,其他為基於公知的方法特別製作者。準備的銅箔的各參數的測定乃至算出方法如同以下。(1) Preparation of copper foil Six types of electrolytic copper foils having a thickness of 9 μm having the parameters shown in Table 1 on at least one side were prepared. Some of these copper foils are commercially available products, and others are specially made by known methods. The measurement and calculation methods of the parameters of the prepared copper foil are as follows.
(FT-IR中的波長10.6μm的雷射的反射率) 使用紅外分光光度計(Thermo Fisher SCIENTIFIC社製、Nicolet Nexus 640 FT-IR Spectrometer),對銅箔表面以下記條件進行測定,取得IR光譜資料。藉由解析取得的IR光譜資料,算出波長10.6μm的雷射的反射率。 <測定條件> ‐測定法:正反射法 ‐背景:Au蒸鍍反射鏡 ‐解析度:4cm-1 ‐掃描次數:64scan ‐檢出器:DTGS(Deuterium Tri-Glycine Sulfate)檢出器(Reflectance of laser with a wavelength of 10.6 μm in FT-IR) Using an infrared spectrophotometer (Nicolet Nexus 640 FT-IR Spectrometer manufactured by Thermo Fisher Scientific Co., Ltd.), the surface of the copper foil was measured under the following conditions to obtain an IR spectrum data. By analyzing the obtained IR spectrum data, the reflectance of the laser with a wavelength of 10.6 μm is calculated. <Measurement conditions>-Measurement method: regular reflection method-Background: Au vapor deposition mirror-Resolution: 4cm -1 -Number of scans: 64scan-Detector: DTGS (Deuterium Tri-Glycine Sulfate) detector
(峰的頂點密度Spd) 利用雷射顯微鏡(股份公司基恩斯製,VK-X100),以S濾光器所致的截止波長0.8μm、倍率2000倍(測定面積107μm ×143μm)的條件,以ISO25178為準據測定銅箔表面的峰的頂點密度Spd。(Peak apex density Spd) Using a laser microscope (manufactured by Keynes Co., Ltd., VK-X100), the surface of the copper foil was measured under the conditions of the cut-off wavelength of 0.8 μm and the magnification of 2000 times (measurement area 107 μm × 143 μm) due to the S filter, based on ISO25178 The peak density Spd of the peak.
(2)銅箔的評價 就準備的銅箔將各種特性的評價如同以下進行。(2) Evaluation of copper foil With respect to the prepared copper foil, various characteristics were evaluated as follows.
<雷射加工性>
如圖2所示,將在上述(1)準備的銅箔作為內層電路形成用的金屬箔使用將雷射加工性評價用層積體如同以下製作,評價雷射加工性。首先,將厚度2μm的銅箔作為金屬箔110準備,在金屬箔110上作為絕緣層112將厚度0.02mm的預浸物(三菱瓦斯化學股份公司製,GHPL-830NSF)層積。接著,將在上述(1)準備的銅箔作為第1配線層用金屬箔113,以具有表1所示的各參數側的面抵接至絕緣層112上的方式層積,以壓力4.0MPa、溫度220℃進行90分鐘的熱間壓印成形得到第1層積體115(圖2(i))。將第1配線層用金屬箔113的表面以微蝕刻液進行1μm蝕刻後,貼附乾薄膜,以預定的圖案進行曝光及顯像,形成蝕刻光阻。將第1配線層用金屬箔113的表面以氯化銅蝕刻液進行處理,從蝕刻光阻間將銅溶解去除後,將蝕刻光阻剝離形成第1配線層114,得到第2層積體116(圖2(ii))。對第1配線層114表面施予粗糙化處理(CZ處理)。粗糙化處理後的第1配線層114的厚度為7μm。之後,在形成第1配線層114的第2層積體116上將厚度0.02mm的預浸物(三菱瓦斯化學股份公司製,GHPL-830NSF)及厚度2μm的銅箔分別作為絕緣層112’及金屬箔110’依序層積,以壓力4.0MPa、溫度220℃進行90分鐘的熱間壓印成形。藉此,得到雷射加工性評價用層積體117(圖2(iii))。此外,金屬箔110的厚度T2
(2μm)相對於雷射加工性評價用層積體117的第1配線層114的厚度T1
(7μm)之比T2
/T1
為2/7=約0.29。對得到的雷射加工性評價用層積體117,利用二氧化碳雷射以9.5MW/cm2
的輸出密度從金屬箔110側施予雷射加工,形成貫通金屬箔110及絕緣層112到達第1配線層114的直徑65μm的通孔118(圖2(iv))。將該通孔118從金屬箔110側以金屬顯微鏡觀察,判定第1配線層114的貫通的有無。關於各例在每88孔進行通孔118的形成及貫通判定,從通孔118的形成數及第1配線層114的貫通數,算出雷射加工後的第1配線層114的貫通率。<Laser workability> As shown in FIG. 2, the copper foil prepared in (1) above was used as a metal foil for inner layer circuit formation. The laminate for evaluation of laser workability was prepared as follows, and the laser processing was evaluated Sex. First, a copper foil with a thickness of 2 μm was prepared as the
<電路密著性> 層積3枚厚度0.1mm的預浸物(三菱瓦斯化學股份公司製,GHPL-830NSF),在層積的預浸物將在上述(1)準備的銅箔,以具有表1所示的各參數側的面抵接的方式層積,以壓力4.0MPa、溫度220℃進行90分鐘的熱間壓印成形製作覆銅層積板樣本。在該覆銅層積板樣本的兩面貼合乾薄膜,形成蝕刻光阻層。接著,在該兩面的蝕刻光阻層,將0.8mm寬度的剝離強度測定試驗用電路曝光顯像,形成蝕刻圖案。之後,以銅蝕刻液進行電路蝕刻,將蝕刻光阻剝離得到電路。將這樣形成的電路(厚度9μm、電路寬度0.8 mm)以JIS C 6481-1996為準據對預浸物表面在90°方向剝離測定剝離強度(kgf/cm)。<circuit adhesion> Three prepregs (GHPL-830NSF, manufactured by Mitsubishi Gas Chemical Co., Ltd.) with a thickness of 0.1 mm are laminated, and the laminated prepreg will be the copper foil prepared in (1) above to have each of those shown in Table 1. The surface on the parameter side was laminated so as to be subjected to hot stamping molding at a pressure of 4.0 MPa and a temperature of 220° C. for 90 minutes to prepare a copper-clad laminate sample. A dry film was bonded on both sides of the copper-clad laminate sample to form an etched photoresist layer. Next, on the etched photoresist layers on both surfaces, a 0.8 mm width peel strength measurement test circuit was exposed and developed to form an etched pattern. Thereafter, the circuit is etched with a copper etching solution, and the photoresist is stripped to obtain a circuit. The circuit thus formed (thickness 9 μm, circuit width 0.8 mm) was peeled off the surface of the prepreg in the direction of 90° according to JIS C 6481-1996, and the peel strength (kgf/cm) was measured.
例7~10
取代厚度9μm的電解銅箔,除了使用在至少一面具有表1所示的各參數的厚度7μm的電解銅箔以外,與例1~6同樣進行各種特性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T2
/T1
為2/5=約0.40。Examples 7 to 10 Instead of using an electrolytic copper foil having a thickness of 9 μm, various characteristics were evaluated in the same manner as in Examples 1 to 6, except that an electrolytic copper foil having a thickness of 7 μm having the parameters shown in Table 1 on at least one side was used. In addition, the thickness of the
結果 在例1~10中得到的評價結果顯示於表1中。result The evaluation results obtained in Examples 1 to 10 are shown in Table 1.
例11
除了1)取代厚度2μm的銅箔,作為金屬箔110、110’分別使用厚度3μm的銅箔、2)調整蝕刻量將粗糙化處理(CZ處理)後的第1配線層114的厚度設為5μm(亦即將T2
/T1
設為3/5=0.60)、及3)將二氧化碳雷射的輸出密度從9.5MW/cm2
變更成9.75MW/cm2
以外,與例5同樣進行雷射加工性的評價。Example 11 In addition to 1) instead of copper foil with a thickness of 2 μm, copper foil with a thickness of 3 μm was used as the metal foils 110 and 110 ′, 2) the thickness of the
例12
除了1)取代厚度2μm的銅箔,作為金屬箔110、110’分別使用厚度3μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.5MW/cm2
變更成9.75MW/cm2
以外,與例10同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T2
/T1
為3/5=0.60。Example 12 except that 1) the thickness of 2μm substituted copper foil, the metal foils 110, 110 '3μm thick copper foil were used, and 2) the density of the carbon dioxide laser output from 9.5MW / cm 2 was changed to 9.75MW / cm 2 Except for Example 10, the laser processability was evaluated. In addition, the thickness of the
例13
除了1)取代厚度2μm的銅箔,作為金屬箔110、110’分別使用厚度3μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.5MW/cm2
變更成9.75MW/cm2
以外,與例8同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T2
/T1
為3/5=0.60。Example 13 except that 1) the thickness of 2μm substituted copper foil, the metal foils 110, 110 '3μm thick copper foil were used, and 2) the density of the carbon dioxide laser output is changed from 9.5MW / cm 2 to 9.75MW / cm 2 Except for Example 8, the laser processability was evaluated. In addition, the thickness of the
例14
除了1)取代厚度3μm的銅箔,作為金屬箔110、110’分別使用厚度5μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.75MW/cm2
變更成10.25MW/cm2
以外,與例11同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T2
/T1
為5/5=1.0。Example 14 Except for 1) replacing copper foil with a thickness of 3 μm, using copper foil with a thickness of 5 μm as the metal foils 110 and 110 ′, and 2) changing the output density of the carbon dioxide laser from 9.75 MW/cm 2 to 10.25 MW/cm 2 Other than that, the laser processability was evaluated in the same manner as in Example 11. In addition, the thickness of the
例15
除了1)取代厚度3μm的銅箔,作為金屬箔110、110’分別使用厚度5μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.75MW/cm2
變更成10.25MW/cm2
以外,與例12同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T2
/T1
為5/5=1.0。Example 15 Except for 1) replacing copper foil with a thickness of 3 μm, using copper foil with a thickness of 5 μm as the metal foils 110 and 110 ′, and 2) changing the output density of the carbon dioxide laser from 9.75 MW/cm 2 to 10.25 MW/cm 2 Other than that, the laser processability was evaluated in the same manner as in Example 12. In addition, the thickness of the
例16
除了1)取代厚度3μm的銅箔,作為金屬箔110、110’分別使用厚度5μm的銅箔、及2)將二氧化碳雷射的輸出密度從9.75MW/cm2
變更成10.25MW/cm2
以外,與例13同樣進行雷射加工性的評價。此外,雷射加工性評價用層積體117的粗糙化處理(CZ處理)後的第1配線層114的厚度為5μm、T2
/T1
為5/5=1.0。Example 16 Except for 1) replacing copper foil with a thickness of 3 μm, using copper foil with a thickness of 5 μm as the metal foils 110 and 110 ′, and 2) changing the output density of the carbon dioxide laser from 9.75 MW/cm 2 to 10.25 MW/cm 2 Other than that, the laser processability was evaluated in the same manner as in Example 13. In addition, the thickness of the
結果 在例11~16中得到的評價結果顯示於表2中。result The evaluation results obtained in Examples 11 to 16 are shown in Table 2.
10:金屬箔
12:絕緣層
14:第1配線層
16:層積體
12’:絕緣層
18:通孔
22:第2配線層
24:多層配線板
110:金屬箔
112:絕緣層
113:第1金屬箔
115:第1層積體
116:第2層積體
112’:絕緣層
110’:金屬箔
118:通孔
114:第1配線層
117:雷射加工性評價用層積體10: Metal foil
12: Insulation
14: 1st wiring layer
16:
[圖1]表示本發明的製造方法的一例中的工程(工程(i)~(iii))的工程流程圖。 [圖2]表示例1~6中的雷射加工性評價用層積體的製作及通孔形成的工程(工程(i)~(iv))的工程流程圖。[Fig. 1] An engineering flowchart showing an engineering (engineering (i) to (iii)) in an example of the manufacturing method of the present invention. [Fig. 2] A process flow chart showing a process (processes (i) to (iv)) for producing a laminate for laser processability evaluation in Examples 1 to 6 and forming a through hole.
10:金屬箔 10: Metal foil
12:絕緣層 12: Insulation
12’:絕緣層 12’: Insulation
14:第1配線層 14: 1st wiring layer
16:層積體 16: Laminate
18:通孔 18: through hole
20:電鍍層 20: plating layer
22:第2配線層 22: Second wiring layer
24:多層配線板 24: Multilayer wiring board
Claims (7)
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