TWI698892B - 電容器 - Google Patents
電容器 Download PDFInfo
- Publication number
- TWI698892B TWI698892B TW107109579A TW107109579A TWI698892B TW I698892 B TWI698892 B TW I698892B TW 107109579 A TW107109579 A TW 107109579A TW 107109579 A TW107109579 A TW 107109579A TW I698892 B TWI698892 B TW I698892B
- Authority
- TW
- Taiwan
- Prior art keywords
- capacitor
- conductive metal
- metal substrate
- oxide film
- upper electrode
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 97
- 239000002184 metal Substances 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 239000000463 material Substances 0.000 claims description 24
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 238000007743 anodising Methods 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 75
- 238000000034 method Methods 0.000 description 32
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000011148 porous material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910004129 HfSiO Inorganic materials 0.000 description 3
- 239000010407 anodic oxide Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- -1 AuSn Inorganic materials 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910010282 TiON Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910002711 AuNi Inorganic materials 0.000 description 1
- 229910015801 BaSrTiO Inorganic materials 0.000 description 1
- 229910003336 CuNi Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/07—Dielectric layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-059822 | 2017-03-24 | ||
JP2017059822 | 2017-03-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201841178A TW201841178A (zh) | 2018-11-16 |
TWI698892B true TWI698892B (zh) | 2020-07-11 |
Family
ID=63586519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107109579A TWI698892B (zh) | 2017-03-24 | 2018-03-21 | 電容器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11114242B2 (ja) |
TW (1) | TWI698892B (ja) |
WO (1) | WO2018174132A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7180561B2 (ja) * | 2019-03-29 | 2022-11-30 | 株式会社村田製作所 | コンデンサアレイ、及び、複合電子部品 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6720096B1 (en) * | 1999-11-17 | 2004-04-13 | Sanyo Electric Co., Ltd. | Dielectric element |
TW200703592A (en) * | 2005-06-15 | 2007-01-16 | Ngk Spark Plug Co | Wiring board and method for manufacturing the smae |
CN101088131A (zh) * | 2004-07-23 | 2007-12-12 | 桑德夫技术有限公司 | 具有高蓄能密度和低等效串联电阻的电容器 |
CN102360955A (zh) * | 2011-09-19 | 2012-02-22 | 常州大学 | 一种采用电化学沉积法提高铝电极箔比容的方法 |
CN102507660A (zh) * | 2011-11-21 | 2012-06-20 | 电子科技大学 | 一种基于氧化铝纳米线薄膜的湿敏传感器及其制备方法 |
WO2015118902A1 (ja) * | 2014-02-07 | 2015-08-13 | 株式会社村田製作所 | コンデンサ |
TW201703077A (zh) * | 2015-05-12 | 2017-01-16 | Murata Manufacturing Co | 電容器及其製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6914770B1 (en) * | 2004-03-02 | 2005-07-05 | Vishay Sprague, Inc. | Surface mount flipchip capacitor |
US20090122460A1 (en) * | 2007-11-12 | 2009-05-14 | Alexander Gschwandtner | Semiconductor Device and Method for Producing the Same |
US20100123993A1 (en) * | 2008-02-13 | 2010-05-20 | Herzel Laor | Atomic layer deposition process for manufacture of battery electrodes, capacitors, resistors, and catalyzers |
US20120099242A1 (en) * | 2009-04-28 | 2012-04-26 | Sanyo Electric Co., Ltd. | Capacitor electrode body, method for manufacturing the capacitor electrode body, capacitor, and method for manufacturing the capacitor |
KR101887793B1 (ko) * | 2014-02-07 | 2018-08-10 | 가부시키가이샤 무라타 세이사쿠쇼 | 콘덴서 |
-
2018
- 2018-03-21 TW TW107109579A patent/TWI698892B/zh active
- 2018-03-22 WO PCT/JP2018/011303 patent/WO2018174132A1/ja active Application Filing
-
2019
- 2019-09-16 US US16/571,401 patent/US11114242B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6720096B1 (en) * | 1999-11-17 | 2004-04-13 | Sanyo Electric Co., Ltd. | Dielectric element |
CN101088131A (zh) * | 2004-07-23 | 2007-12-12 | 桑德夫技术有限公司 | 具有高蓄能密度和低等效串联电阻的电容器 |
TW200703592A (en) * | 2005-06-15 | 2007-01-16 | Ngk Spark Plug Co | Wiring board and method for manufacturing the smae |
CN102360955A (zh) * | 2011-09-19 | 2012-02-22 | 常州大学 | 一种采用电化学沉积法提高铝电极箔比容的方法 |
CN102507660A (zh) * | 2011-11-21 | 2012-06-20 | 电子科技大学 | 一种基于氧化铝纳米线薄膜的湿敏传感器及其制备方法 |
WO2015118902A1 (ja) * | 2014-02-07 | 2015-08-13 | 株式会社村田製作所 | コンデンサ |
TW201703077A (zh) * | 2015-05-12 | 2017-01-16 | Murata Manufacturing Co | 電容器及其製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2018174132A1 (ja) | 2018-09-27 |
US20200013552A1 (en) | 2020-01-09 |
TW201841178A (zh) | 2018-11-16 |
US11114242B2 (en) | 2021-09-07 |
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