TWI698888B - 用於改良金屬粒子層的材料屬性的印刷漿料 - Google Patents

用於改良金屬粒子層的材料屬性的印刷漿料 Download PDF

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TWI698888B
TWI698888B TW107116394A TW107116394A TWI698888B TW I698888 B TWI698888 B TW I698888B TW 107116394 A TW107116394 A TW 107116394A TW 107116394 A TW107116394 A TW 107116394A TW I698888 B TWI698888 B TW I698888B
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layer
particles
particle layer
aluminum
metal
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TW107116394A
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TW201832246A (zh
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布萊恩 Ｅ 哈丁
艾瑞克 索爾
迪埃 蘇賽諾
傑西 Ｊ 欣李奇
鈺淳 黃
于唐 林
史蒂芬 Ｔ 康納
丹尼爾 Ｊ 赫爾布什
克雷格 Ｈ 彼得斯
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日商日立化成股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/103—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0466—Alloys based on noble metals
    • H—ELECTRICITY
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    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
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    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40—Thermal components
    • H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
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    • H10N30/053—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by integrally sintering piezoelectric or electrostrictive bodies and electrodes
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    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/547—Monocrystalline silicon PV cells
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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  • Engineering & Computer Science (AREA)
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  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Composite Materials (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Metallurgy (AREA)
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  • Photovoltaic Devices (AREA)
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TW107116394A 2015-11-24 2016-11-24 用於改良金屬粒子層的材料屬性的印刷漿料 TWI698888B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US201562259636P 2015-11-24 2015-11-24
US62/259,636 2015-11-24
US201662318566P 2016-04-05 2016-04-05
US62/318,566 2016-04-05
US201662371236P 2016-08-05 2016-08-05
US62/371,236 2016-08-05
US201662423020P 2016-11-16 2016-11-16
US62/423,020 2016-11-16

Publications (2)

Publication Number Publication Date
TW201832246A TW201832246A (zh) 2018-09-01
TWI698888B true TWI698888B (zh) 2020-07-11

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Family Applications (8)

Application Number Title Priority Date Filing Date
TW107116394A TWI698888B (zh) 2015-11-24 2016-11-24 用於改良金屬粒子層的材料屬性的印刷漿料
TW105217945U TWM544118U (zh) 2015-11-24 2016-11-24 矽太陽能電池模組中的燒結多層堆疊
TW105138567A TWI613267B (zh) 2015-11-24 2016-11-24 用於改良金屬粒子層的材料屬性的印刷漿料
TW105138569A TWI645982B (zh) 2015-11-24 2016-11-24 用於積體電路和太陽能電池的燒結多層堆疊
TW105138566A TWI627763B (zh) 2015-11-24 2016-11-24 形成燒結多層堆疊的方法及製造太陽能電池的方法
TW105217946U TWM544120U (zh) 2015-11-24 2016-11-24 矽太陽能電池中的燒結多層堆疊
TW105138568A TWI621275B (zh) 2015-11-24 2016-11-24 具有燒結多層堆疊的太陽能電池和模組
TW105217947U TWM542251U (zh) 2015-11-24 2016-11-24 具有改良插層和金屬粒子層的燒結多層堆疊

Family Applications After (7)

Application Number Title Priority Date Filing Date
TW105217945U TWM544118U (zh) 2015-11-24 2016-11-24 矽太陽能電池模組中的燒結多層堆疊
TW105138567A TWI613267B (zh) 2015-11-24 2016-11-24 用於改良金屬粒子層的材料屬性的印刷漿料
TW105138569A TWI645982B (zh) 2015-11-24 2016-11-24 用於積體電路和太陽能電池的燒結多層堆疊
TW105138566A TWI627763B (zh) 2015-11-24 2016-11-24 形成燒結多層堆疊的方法及製造太陽能電池的方法
TW105217946U TWM544120U (zh) 2015-11-24 2016-11-24 矽太陽能電池中的燒結多層堆疊
TW105138568A TWI621275B (zh) 2015-11-24 2016-11-24 具有燒結多層堆疊的太陽能電池和模組
TW105217947U TWM542251U (zh) 2015-11-24 2016-11-24 具有改良插層和金屬粒子層的燒結多層堆疊

Country Status (7)

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EP (1) EP3381047A4 (ja)
JP (2) JP7006593B2 (ja)
KR (1) KR20180087342A (ja)
CN (7) CN207250530U (ja)
SG (1) SG11201804392WA (ja)
TW (8) TWI698888B (ja)
WO (1) WO2017091782A1 (ja)

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JP7006593B2 (ja) * 2015-11-24 2022-01-24 昭和電工マテリアルズ株式会社 集積回路に使用するための焼成多層スタック及び太陽電池
CN107454699B (zh) * 2017-08-14 2020-11-20 湖南嘉业达电子有限公司 一种电磁感应加热膜制作方法及电磁感应加热膜
CN107845694A (zh) * 2017-11-03 2018-03-27 通威太阳能（安徽）有限公司 一种背场钝化工艺用太阳能电池片混合浆料
CN108091709A (zh) * 2017-12-20 2018-05-29 张汉钰 一种硅锌多维光伏材料及其制作方法
US20210283686A1 (en) * 2018-02-09 2021-09-16 Hewlett-Packard Development Company, L.P. Material sets
CN108447780A (zh) * 2018-02-11 2018-08-24 厦门市三安集成电路有限公司 一种氮化物半导体器件的欧姆接触结构及其制作方法
EP3806111B1 (en) * 2018-07-06 2024-03-13 Senju Metal Industry Co., Ltd. Electrically conductive paste and sintered body
US20210292574A1 (en) * 2018-07-06 2021-09-23 Showa Denko Materials Co., Ltd. Print-on pastes with metal-based additives for modifying material properties of metal particle layers
CN112469514B (zh) * 2018-08-06 2023-02-24 株式会社德山 从太阳能电池组件回收有价物质的方法
KR20200021772A (ko) * 2018-08-21 2020-03-02 엘지전자 주식회사 화합물 반도체 태양전지 및 이의 제조 방법
CN109754905A (zh) * 2019-02-27 2019-05-14 江苏正能电子科技有限公司 一种高触变perc晶体硅太阳能电池用背面银浆及其制备方法
US11455521B2 (en) 2019-03-01 2022-09-27 International Business Machines Corporation Neuromorphic device driven by copper ion intercalation
CN110988728B (zh) * 2019-11-25 2023-08-04 安徽绿沃循环能源科技有限公司 一种锂电池包内部连接异常快速诊断方法
WO2022181732A1 (ja) * 2021-02-24 2022-09-01 昭和電工マテリアルズ株式会社 太陽電池素子及び太陽電池
JPWO2022181731A1 (ja) * 2021-02-24 2022-09-01
WO2022181730A1 (ja) * 2021-02-24 2022-09-01 昭和電工マテリアルズ株式会社 太陽電池素子及び太陽電池
CN113087400B (zh) * 2021-04-21 2023-07-07 贵州国锐鑫节能科技有限公司 一种提高太阳能电池转化效率的低熔点玻璃粉及其制备方法
CN115000199B (zh) * 2022-08-01 2022-10-25 一道新能源科技(衢州)有限公司 一种p型perc单面电池结构
CN116031314A (zh) 2023-02-14 2023-04-28 浙江晶科能源有限公司 光伏电池及光伏组件

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