TWI698305B - 使用傾向引導流體於噴灑主體下方且前往入口埠之流體出口的拋光墊清理系統及其方法 - Google Patents
使用傾向引導流體於噴灑主體下方且前往入口埠之流體出口的拋光墊清理系統及其方法 Download PDFInfo
- Publication number
- TWI698305B TWI698305B TW104126604A TW104126604A TWI698305B TW I698305 B TWI698305 B TW I698305B TW 104126604 A TW104126604 A TW 104126604A TW 104126604 A TW104126604 A TW 104126604A TW I698305 B TWI698305 B TW I698305B
- Authority
- TW
- Taiwan
- Prior art keywords
- fluid
- inlet port
- spray
- polishing pad
- bottom side
- Prior art date
Links
- 239000012530 fluid Substances 0.000 title claims abstract description 345
- 239000007921 spray Substances 0.000 title claims abstract description 215
- 238000005498 polishing Methods 0.000 title claims abstract description 206
- 238000000034 method Methods 0.000 title abstract description 36
- 238000004140 cleaning Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000005507 spraying Methods 0.000 claims description 35
- 238000005192 partition Methods 0.000 claims description 26
- 239000000126 substance Substances 0.000 claims description 20
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 230000006872 improvement Effects 0.000 claims description 3
- 239000002002 slurry Substances 0.000 abstract description 23
- 230000007547 defect Effects 0.000 abstract description 9
- 230000003749 cleanliness Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000011010 flushing procedure Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 239000003595 mist Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000013013 elastic material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005381 potential energy Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 238000004137 mechanical activation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/02—Devices or means for dressing or conditioning abrasive surfaces of plane surfaces on abrasive tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/523,482 US9687960B2 (en) | 2014-10-24 | 2014-10-24 | Polishing pad cleaning systems employing fluid outlets oriented to direct fluid under spray bodies and towards inlet ports, and related methods |
| US14/523,482 | 2014-10-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201617171A TW201617171A (zh) | 2016-05-16 |
| TWI698305B true TWI698305B (zh) | 2020-07-11 |
Family
ID=55761295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104126604A TWI698305B (zh) | 2014-10-24 | 2015-08-14 | 使用傾向引導流體於噴灑主體下方且前往入口埠之流體出口的拋光墊清理系統及其方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9687960B2 (enExample) |
| JP (1) | JP6640848B2 (enExample) |
| KR (1) | KR102399846B1 (enExample) |
| CN (1) | CN107078045B (enExample) |
| TW (1) | TWI698305B (enExample) |
| WO (1) | WO2016064467A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107107304A (zh) * | 2014-12-12 | 2017-08-29 | 应用材料公司 | 用于cmp期间的原位副产物移除及台板冷却的系统及工艺 |
| KR102401388B1 (ko) * | 2016-06-24 | 2022-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 연마를 위한 슬러리 분배 디바이스 |
| JP7083722B2 (ja) * | 2018-08-06 | 2022-06-13 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
| JP7162465B2 (ja) * | 2018-08-06 | 2022-10-28 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
| JP7492854B2 (ja) * | 2020-05-11 | 2024-05-30 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
| US12240078B2 (en) * | 2020-06-24 | 2025-03-04 | Applied Materials, Inc. | Cleaning system for polishing liquid delivery arm |
| US11577358B2 (en) * | 2020-06-30 | 2023-02-14 | Applied Materials, Inc. | Gas entrainment during jetting of fluid for temperature control in chemical mechanical polishing |
| US11724355B2 (en) | 2020-09-30 | 2023-08-15 | Applied Materials, Inc. | Substrate polish edge uniformity control with secondary fluid dispense |
| KR20220073192A (ko) * | 2020-11-26 | 2022-06-03 | 에스케이실트론 주식회사 | 연마 패드 세정 장치 및 연마 장치 |
| JP7592362B2 (ja) * | 2021-02-02 | 2024-12-02 | 株式会社ディスコ | 研削方法 |
| CN113977458B (zh) * | 2021-11-25 | 2022-12-02 | 中国计量科学研究院 | 抛光液注入装置及抛光系统 |
| CN114888722B (zh) * | 2022-05-17 | 2024-11-22 | 华海清科股份有限公司 | 一种化学机械抛光方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5779522A (en) * | 1995-12-19 | 1998-07-14 | Micron Technology, Inc. | Directional spray pad scrubber |
| US6626743B1 (en) * | 2000-03-31 | 2003-09-30 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad |
| US20100197204A1 (en) * | 2003-02-11 | 2010-08-05 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3511442B2 (ja) * | 1996-12-18 | 2004-03-29 | 忠弘 大見 | 洗浄やエッチング、現像、剥離等を含むウエット処理に用いる省液型の液体供給ノズル、省液型の液体供給ノズル装置及びウエット処理装置 |
| US5916010A (en) * | 1997-10-30 | 1999-06-29 | International Business Machines Corporation | CMP pad maintenance apparatus and method |
| JPH11291155A (ja) * | 1998-04-10 | 1999-10-26 | Hitachi Cable Ltd | 脆性材料研磨用定盤の掃除方法及びその装置並びに研磨装置 |
| JP2001277095A (ja) * | 2000-03-31 | 2001-10-09 | Mitsubishi Materials Corp | パッドコンディショニング装置及びパッドコンディショニング方法 |
| JP2001237204A (ja) * | 2000-02-22 | 2001-08-31 | Hitachi Ltd | 半導体装置の製造方法 |
| US6669538B2 (en) * | 2000-02-24 | 2003-12-30 | Applied Materials Inc | Pad cleaning for a CMP system |
| US6824448B1 (en) | 2001-05-31 | 2004-11-30 | Koninklijke Philips Electronics N.V. | CMP polisher substrate removal control mechanism and method |
| KR100500517B1 (ko) | 2002-10-22 | 2005-07-12 | 삼성전자주식회사 | 반도체 웨이퍼용 cmp 설비 |
| JP2004228301A (ja) * | 2003-01-22 | 2004-08-12 | Sharp Corp | 基板処理装置および基板処理方法 |
| US7004820B1 (en) | 2005-05-26 | 2006-02-28 | United Microelectronics Corp. | CMP method and device capable of avoiding slurry residues |
| KR20070121146A (ko) * | 2006-06-21 | 2007-12-27 | 삼성전자주식회사 | 화학적 기계적 연마설비의 슬러리 공급장치 |
| KR20100034618A (ko) | 2008-09-24 | 2010-04-01 | 주식회사 하이닉스반도체 | 연마 패드의 세정방법 |
| KR101130888B1 (ko) | 2010-05-10 | 2012-03-28 | 주식회사 케이씨텍 | 화학 기계적 연마 장치의 캐리어 헤드의 세정 유닛 및 이를 이용한 이동식 화학 기계적 연마 시스템 |
| CN102553849B (zh) * | 2010-12-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | 一种固定研磨粒抛光垫清洗装置及清洗方法 |
| US20140148822A1 (en) * | 2012-11-26 | 2014-05-29 | Nahayan Ameen Abdulla Ibrahim Al Mahza | Method and apparatus for polishing human skin |
-
2014
- 2014-10-24 US US14/523,482 patent/US9687960B2/en active Active
-
2015
- 2015-08-13 JP JP2017522156A patent/JP6640848B2/ja active Active
- 2015-08-13 CN CN201580057701.1A patent/CN107078045B/zh active Active
- 2015-08-13 KR KR1020177014173A patent/KR102399846B1/ko active Active
- 2015-08-13 WO PCT/US2015/044970 patent/WO2016064467A1/en not_active Ceased
- 2015-08-14 TW TW104126604A patent/TWI698305B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5779522A (en) * | 1995-12-19 | 1998-07-14 | Micron Technology, Inc. | Directional spray pad scrubber |
| US6626743B1 (en) * | 2000-03-31 | 2003-09-30 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad |
| US20100197204A1 (en) * | 2003-02-11 | 2010-08-05 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102399846B1 (ko) | 2022-05-20 |
| JP6640848B2 (ja) | 2020-02-05 |
| CN107078045B (zh) | 2020-11-20 |
| JP2017532790A (ja) | 2017-11-02 |
| TW201617171A (zh) | 2016-05-16 |
| US9687960B2 (en) | 2017-06-27 |
| CN107078045A (zh) | 2017-08-18 |
| US20160114459A1 (en) | 2016-04-28 |
| KR20170073689A (ko) | 2017-06-28 |
| WO2016064467A1 (en) | 2016-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI698305B (zh) | 使用傾向引導流體於噴灑主體下方且前往入口埠之流體出口的拋光墊清理系統及其方法 | |
| TWI691367B (zh) | 用於研磨墊清洗的方法及系統 | |
| CN105390417B (zh) | 抛光组件及基板处理装置 | |
| US7240679B2 (en) | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold | |
| JP4641540B2 (ja) | 研磨装置および研磨方法 | |
| CN101826449B (zh) | 液体处理装置及液体处理方法 | |
| US20050139318A1 (en) | Proximity meniscus manifold | |
| KR101893439B1 (ko) | 판 형상 부재의 가공 장치 및 그 가공 방법 | |
| KR101420900B1 (ko) | 슬러리의 수동적 제거를 제공하는 연마 어셈블리들을 구비한 cmp 장치들 | |
| TWI810342B (zh) | 研磨裝置及研磨方法 | |
| JP7083722B2 (ja) | 研磨装置、及び、研磨方法 | |
| US10661411B2 (en) | Apparatus for cleaning a polishing surface, polishing apparatus, and method of manufacturing an apparatus for cleaning a polishing surface | |
| US20190039203A1 (en) | Substrate processing apparatus | |
| TWI829280B (zh) | 用於拋光液體傳輸臂的清潔裝置、工具及方法,及其拋光組件 | |
| KR101615426B1 (ko) | 슬러리 분사노즐 및 이를 이용한 기판 처리장치 | |
| WO2001012384A2 (en) | Apparatus for moving a workpiece | |
| KR200471622Y1 (ko) | 화학적 기계적 연마 장치의 연마헤드 세정장치 | |
| JP2025126581A (ja) | Cmp装置、及び、cmp方法 | |
| CN120134203A (zh) | 化学机械研磨设备 |