TWI698170B - 電磁屏蔽膜及其製作方法 - Google Patents

電磁屏蔽膜及其製作方法 Download PDF

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TWI698170B
TWI698170B TW107122412A TW107122412A TWI698170B TW I698170 B TWI698170 B TW I698170B TW 107122412 A TW107122412 A TW 107122412A TW 107122412 A TW107122412 A TW 107122412A TW I698170 B TWI698170 B TW I698170B
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electromagnetic shielding
shielding film
layer
mass percentage
metal layer
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沈芾雲
何明展
徐筱婷
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大陸商慶鼎精密電子（淮安）有限公司
大陸商鵬鼎控股（深圳）股份有限公司
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Abstract

本發明涉及一種電磁屏蔽膜，其包括一絕緣層、一金屬層以及一導電 膠層。所述絕緣層由聚醯亞胺製作而成。所述金屬層形成於所述絕緣層一表面。所述金屬層的化學成分為銀。所述導電膠層塗覆於所述金屬層表面的。本發明涉及一種所述電磁屏蔽膜的製作方法。

Description

電磁屏蔽膜及其製作方法
本發明涉及遮罩材料技術領域，尤其涉及一種電磁屏蔽膜及其製作方法。
電磁遮罩性係指能夠遮罩掉外部幹擾電磁訊號，使電子元件不受其它設備的影響或幹擾，係產品品質的重要指標之一。隨著人們對網路通訊速度要求的不斷提高，智慧手機等可擕式終端設備對超高頻(1Ghz~50Ghz)訊號的遮罩要求越來越高，其遮罩性通常借助於電子設備中設置的電磁屏蔽膜來實現。通常，電磁屏蔽膜包括金屬層、膠層及保護層。保護層採用熱塑性聚氨酯製作。
隨著電子元件朝小型化，功能多樣化的發展，柔性電路板的面積層數不斷縮小，層數不斷增加，市場上有對電磁屏蔽膜在高段差環境中應用的需求。惟，在高段差疊構(大於50微米)的柔性電路板中，一般電磁屏蔽膜會有破裂或產生氣泡的情況發生。
因此，有必要提供一種製作過程簡單並且成型時無毛刺殘銅產生的電路板製作方法及電路板。
一種電磁屏蔽膜，包括：一絕緣層，所述絕緣層由聚醯亞胺製作而成；形成於所述絕緣層一表面的金屬層，所述金屬層的化學成分為銀；以及塗覆於所述金屬層表面的導電膠層。
一種電磁屏蔽膜的製作方法，包括以下步驟：在所述絕緣層表面進行化銀處理，形成金屬層，以及在所述金屬層表面塗導電膠，形成導電膠層。
本技術方案提供的電磁屏蔽膜，藉由在所述絕緣層(聚醯亞胺)上金屬化銀，然後塗覆導電膠的製作完成。所述電磁屏蔽膜將絕緣層作為外層保護層，具有較好的剝離強度、柔軟性及較低的反彈力，保證其在具有高斷差的產品元件中應用不致破裂或產生氣泡。
10:絕緣層
12:上表面
14:下表面
20:金屬層
30:導電膠層
100:電磁屏蔽膜
200:電路板
圖1係本技術方案實施例提供的絕緣層的剖面示意圖。
圖2係圖1的絕緣層金屬化處理(化銀)後的剖面示意圖。
圖3係圖2金屬層上形成導電膠層後的俯視圖。
圖4係圖3中的電磁屏蔽膜壓覆在含有高度斷差的電路板後的剖面示意圖。
下面將結合附圖及實施例對本技術方案提供的電磁屏蔽膜及其製作方法作進一步的詳細說明。
本技術方案實施例提供的電磁屏蔽膜100的製作方法包括以下步驟：
第一步，請參閱圖1，提供一絕緣層10。
所述絕緣層10包括一上表面12以及一下表面14。所述上表面12與所述下表面14相背設置。所述絕緣層10的厚度範圍為5~35微米。本實施方式中，所述絕緣層10由聚醯亞胺(PI)製作而成。
第二步，請一併參閱圖2，對所述絕緣層10進行金屬化處理得到金屬層20。所述金屬層20的厚度範圍為0.1~0.5微米。本實施方式中，所述金屬層為銀層。所述金屬化處理採用化銀的方式。
具體地，先對所述上表面12進行表面處理，形成符合金屬化的表面結構。所述表面處理包含物理氧化、化學氧化、化學接枝、電接枝、光化學接枝以及矽烷化修改中的一種或任意幾種的組合。所述金屬化處理可以為靜電吸附或化學鍍中的任意一種方式。
當採用靜電吸附的方式時，添加的反應物為銀奈米晶(AgNPs)，催化劑的主要成分為奈米銀單質。所述上表面12藉由電荷改質的方式吸附AgNPs，形成金屬層20。
當採用離子反應的方式時，添加的反應物為銀離子，催化劑的主要成分為AgNO3、Ag(NH3)2NO3、AgClO4、AgOAc，所述上表面12藉由電荷改質的方式吸附銀離子，然後藉由一系列還原反應在所述上表面12上形成金屬層20。
在其它實施方式中，當採用離子反應的方式時，添加的反應物為銀離子及銅離子，催化劑的主要成分為AgNO3、CuCl2，所述上表面12藉由電荷改質的方式吸附銀離子及銅離子，然後藉由一系列還原反應在所述上表面12上形成銅銀合金，從而形成金屬層20。
在其他實施方式中，可繼續在所述金屬層20上進行化銅處理以在所述金屬層20上形成金屬加厚層(圖未示)。
第三步，請參閱圖3，形成所述金屬層20後，在所述金屬層20表面塗布導電膠，形成導電膠層30，從而形成電磁屏蔽膜100。
所述導電膠層30的厚度範圍為8~40微米。本實施方式中，所述導電膠層30包括質量百分比為9.8%~10.5%的雙酚A二縮水甘油醚、質量百分比為4.54%~4.86%的雙酚S二縮水甘油醚、質量百分比為2.27%~2.43%的雙酚F二縮水甘油醚、質量百分比為7.11%~7.62%的聚醯胺、質量百分比為48.6%~68.3%的銀包銅粉以及質量百分比為6.44%~25.9%的銀片。
其中，所述雙酚A二縮水甘油醚用於增加所述導電膠層30的強韌性、柔軟性及耐化性。所述雙酚S二縮水甘油醚用於增加所述導電膠層30的連接性及耐熱性。所述雙酚F二縮水甘油醚作為雙官能團稀釋劑。所述聚醯胺用作固化劑。在其它實施方式中，也可選擇雙氰胺作為固化劑。所述銀包銅粉及所述銀片均起到導電的作用，兩者含量越高所述導電膠層30的電阻率越低。惟，過量的粉體會造成述導電膠層30配方的分散性不加，印刷操作性差，所以銀包銅粉含量保持在48.6%~68.3%、銀片含量在6.44%~25.9%為最佳範圍。
下表為所述導電膠層30的三種配方。
Figure 107122412-A0305-02-0006-2
Figure 107122412-A0305-02-0007-1
將上述雙酚A二縮水甘油醚、雙酚S二縮水甘油醚、雙酚F二縮水甘油醚、聚醯胺、銀包銅粉以及銀片混合，溶解在溶劑中，形成所述導電膠層30。
在滿足各成分比例範圍的情況下，所述配方的參數重量可作調整，並不以此為限。
請參閱圖3，所述電磁屏蔽膜100包括所述絕緣層10、所述金屬層20以及所述導電膠層30。所述絕緣層10由聚醯亞胺製作而成。所述金屬層20形成於所述絕緣層10的表面。所述金屬層20的化學成分為銀。所述導電膠層30塗覆於所述金屬層20的表面。所述電磁屏蔽膜100厚度維持在13~75微米之間。所述電磁屏蔽膜100的橫向抗拉強度大於160Mpa，縱向抗拉強度大於130Mpa。所述電磁屏蔽膜100的橫向及縱向延伸率均在60~120%之間。所述電磁屏蔽膜100的剝離強度大於0.6Kg/cm。所述電磁屏蔽膜100的可繞折彎曲次數在10000次以上。
請參閱圖4，所述電磁屏蔽膜100應用於具有高斷差的電路板200上。所述電路板200具有一高度斷差，其直徑e大於0.8毫米，高度落差d的範圍在0~100微米之間。優選地，所述高度落差d的範圍在50~100微米之間。即，所述電磁屏蔽膜100更適合應用在具有50~100微米的高度落差範圍的電路板上。所述電磁屏蔽膜100貼覆在所述電路板200上並覆蓋該高度斷差。此時所述導電膠層 30貼覆在所述電路板200表面，所述絕緣層10背離所述電路板200。所述電磁屏蔽膜100貼覆在所述電路板200後，所述絕緣層的厚度維持在5~35微米之間，所述金屬層的厚度維持在0.1~0.5微米之間，所述導電膠層的厚度維持在8~40微米之間。
本技術方案提供的電磁屏蔽膜100，藉由在所述絕緣層10(聚醯亞胺)上金屬化銀並化銅，然後塗覆導電膠的製作完成。所述電磁屏蔽膜100將絕緣層10作為外層保護層，具有較好的剝離強度、柔軟性及較低的反彈力，保證其在具有高斷差的產品元件中應用不致破裂或產生氣泡。此外，由於PI的延伸率在70~90%之間，降低了所述電磁屏蔽膜100的沖型難度。而PI的高抗撕強度，使其在撕離型紙過程中不易破損。再者，PI具有較低的吸水率(0.3~0.4%)。
可以理解的係，對於本領域具有通常知識者來說，可以根據本發明的技術構思做出其他各種相應的改變與變形，而所有這些改變與變形都應屬於本發明的保護範圍。
10:絕緣層
12:上表面
14:下表面
20:金屬層
30:導電膠層
100:電磁屏蔽膜

Claims (8)

  1. 一種電磁屏蔽膜，包括：一絕緣層，所述絕緣層由聚醯亞胺製作而成；形成於所述絕緣層一表面的金屬層，所述金屬層的化學成分為銀；以及塗覆於所述金屬層表面的導電膠層；所述導電膠層包括質量百分比在9.8%~10.5%之間的雙酚A二縮水甘油醚、質量百分比在4.54%~4.86%之間的雙酚S二縮水甘油醚、質量百分比在2.27%~2.43%之間的雙酚F二縮水甘油醚、質量百分比在7.11%~7.62%之間的聚醯胺、質量百分比在48.6%~68.3%之間的銀包銅粉以及質量百分比在6.44%~25.9%的銀片。
  2. 如請求項1所述的電磁屏蔽膜，其中，所述電磁屏蔽膜還包括金屬加厚層，所述金屬加厚層的化學成分為銅。
  3. 如請求項1所述的電磁屏蔽膜，其中，所述電磁屏蔽膜的整體厚度範圍為13~75微米，所述絕緣層的厚度範圍為5~35微米，所述金屬層的厚度範圍為0.1~0.5微米，所述導電膠層的厚度範圍為8~40微米。
  4. 如請求項1所述的電磁屏蔽膜，其中，所述金屬層藉由電鍍、化學鍍或者靜電吸附中的任何一種方式形成於所述絕緣層上。
  5. 一種請求項1~4中任一項所述的電磁屏蔽膜的製作方法，其中，包括以下步驟：在所述絕緣層表面進行化銀處理，形成金屬層，以及在所述金屬層表面塗導電膠，形成導電膠層；所述導電膠層包括質量百分比在9.8%~10.5%之間的雙酚A二縮水甘油醚、質量百分比在4.54%~4.86%之間的雙酚S二縮水甘油醚、質量百分比在2.27%~2.43%之間的雙酚F二縮水甘油醚、質量百分比在7.11%~7.62%之間的聚醯胺、質量百分比在48.6%~68.3%之間的銀包銅粉以及質量百分比在6.44%~25.9%的銀片。
  6. 如請求項5所述的電磁屏蔽膜的製作方法，其中，在形成所述金屬層步驟之後，形成所述導電膠層之前，所述電磁屏蔽膜的製作方法包括以下步驟：在所述金屬層表面進行化銅處理，形成金屬加厚層。
  7. 如請求項5所述的電磁屏蔽膜的製作方法，其中，所述化銀處理的反應劑為銀奈米晶，催化劑主劑為奈米銀。
  8. 如請求項5所述的電磁屏蔽膜的製作方法，其中，所述化銀處理的反應劑為銀離子，催化劑主劑為AgNO3、Ag(NH3)2NO3、AgClO4、AgOAc。
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