TWI697976B - Processing liquid supplying apparatus, substrate processing apparatus, and processing liquid supplying method - Google Patents
Processing liquid supplying apparatus, substrate processing apparatus, and processing liquid supplying method Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 206
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
- B01D35/02—Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
本發明提供一種減少通過了溶解模組的處理液中的粒子量的技術。處理液供給單元3是將已由過濾器31a~過濾器31d過濾的處理液供給至多個處理單元2中的裝置。供給閥33插裝於與過濾器31a~過濾器31d連接的一次側供給配管32上。另外,於一次側供給配管32中的供給閥33的一次側連接有排液配管41。而且,排液閥42插裝於排液配管41上。控制部52對應於處理液中的粒子量,將供給閥33關閉,並將排液閥42打開,藉此將處理液經由溶解模組30及一次側供給配管32及排液配管41而排液。The present invention provides a technique for reducing the amount of particles in a treatment liquid that has passed through a dissolution module. The processing liquid supply unit 3 is a device that supplies the processing liquid filtered by the filters 31 a to 31 d to the plurality of processing units 2. The supply valve 33 is inserted in the primary side supply pipe 32 connected to the filter 31a-the filter 31d. In addition, a drain piping 41 is connected to the primary side of the supply valve 33 in the primary side supply piping 32. Furthermore, the drain valve 42 is inserted in the drain pipe 41. The control unit 52 closes the supply valve 33 and opens the drain valve 42 according to the amount of particles in the treatment liquid, thereby discharging the treatment liquid through the dissolving module 30 and the primary supply pipe 32 and the drain pipe 41 .
Description
本發明是有關於一種將處理液供給至對處理對象的基板進行處理的處理部中的處理液供給裝置及處理液供給方法。成為處理對象的基板例如包括:半導體晶圓、液晶顯示裝置用玻璃基板、電漿顯示器用基板、場發射顯示器(Field Emission Display,FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等的基板。 The present invention relates to a processing liquid supply device and a processing liquid supply method for supplying a processing liquid to a processing section that processes a substrate to be processed. The substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for plasma displays, substrates for Field Emission Display (FED), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. Substrates such as substrates, photomask substrates, ceramic substrates, and solar cell substrates.
於半導體裝置或液晶顯示裝置的製造步驟中,使用藉由處理液來對半導體晶圓等的基板進行處理的基板處理裝置。對基板一片一片地進行處理的逐片型的基板處理裝置例如於本體部中包括處理部,所述處理部具有水平地保持基板並使其旋轉的旋轉夾盤、及朝由該旋轉夾盤所保持的基板噴出處理液的處理液噴嘴。為了將處理液供給至處理液噴嘴中,於基板處理裝置中包括有別於本體部的處理液供給裝置。於處理液噴嘴上連接有自處理 液供給裝置延長的處理液供給配管,經由該處理液供給配管來供給處理液供給裝置的處理液槽中所儲存的處理液(例如,專利文獻1)。 In the manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus that processes a substrate such as a semiconductor wafer with a processing liquid is used. A piece-by-piece type substrate processing apparatus that processes substrates one by one, for example, includes a processing section in the main body section, the processing section having a rotating chuck that horizontally holds the substrate and rotates it, and is driven by the rotating chuck. The held substrate ejects the processing liquid from the processing liquid nozzle. In order to supply the processing liquid to the processing liquid nozzle, the substrate processing apparatus includes a processing liquid supply device different from the main body. Self-treatment is connected to the treatment liquid nozzle The processing liquid supply pipe extended by the liquid supply device supplies processing liquid stored in the processing liquid tank of the processing liquid supply device via the processing liquid supply pipe (for example, Patent Document 1).
另外,亦利用藉由溶解模組來使規定的氣體溶解的處理液對基板進行處理。例如,當利用將純水作為主成分的淋洗液對基板進行處理時,存在使用使二氧化碳以規定濃度溶解於所述純水中而成的碳酸水的情況(例如,專利文獻2)。藉由利用碳酸水對基板進行淋洗處理,而防止基板的帶電。 In addition, the substrate is also processed with a processing liquid in which a predetermined gas is dissolved by a dissolution module. For example, when a substrate is processed with a rinse liquid containing pure water as a main component, carbonated water in which carbon dioxide is dissolved in the pure water at a predetermined concentration may be used (for example, Patent Document 2). By using carbonated water to rinse the substrate, the substrate is prevented from being charged.
[現有技術文獻] [Prior Art Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利特開2006-351709號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2006-351709
[專利文獻2]日本專利特開2016-157895號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2016-157895
但是,因所述溶解模組的由長時間使用所引起的經年劣化等的理由,而擔憂於通過了溶解模組的處理液中產生粒子(異物)。伴隨半導體結構的微細化,強烈要求處理液中的粒子的去除,因此需要一種減少通過了溶解模組的處理液中的粒子量的技術。 However, there is a concern that particles (foreign matter) will be generated in the treatment liquid that has passed through the dissolution module due to the aging degradation caused by the long-term use of the dissolution module. With the miniaturization of the semiconductor structure, there is a strong demand for the removal of particles in the processing liquid, and therefore, a technology for reducing the amount of particles in the processing liquid that has passed through the dissolution module is required.
因此,本發明的目的在於提供一種可減少通過了溶解模組的處理液中的粒子量的技術。 Therefore, the object of the present invention is to provide a technique that can reduce the amount of particles in the treatment liquid that has passed through the dissolution module.
為了解決所述課題,第一形態是一種供給處理液的處理液供給裝置,其包括:溶解模組,使氣體溶解於處理液的原液中;一次側供給配管,其一端與所述溶解模組的二次側連接;過濾器,與所述一次側供給配管的另一端連接,對所述處理液進行過濾;二次側供給配管,與所述過濾器的二次側連接,形成通過了所述過濾器的所述處理液通過的流路;排液配管,與所述一次側供給配管連接,將所述處理液輸送至排液部中;切換部,設置於所述一次側供給配管上,於所述溶解模組與所述過濾器連通的狀態、及所述溶解模組與所述排液部連通的狀態之間進行切換;粒子測定部,設置於所述切換部的一次側,測定通過所述一次側供給配管的所述處理液中的粒子量;以及控制部,對應於由所述粒子測定部所測定的所述粒子量,控制由所述切換部所進行的切換動作。 In order to solve the above-mentioned problems, the first aspect is a processing liquid supply device for supplying processing liquid, which includes: a dissolving module for dissolving gas in the raw liquid of the processing liquid; The filter is connected to the other end of the primary side supply pipe to filter the processing liquid; the secondary side supply pipe is connected to the secondary side of the filter to form a The flow path through which the treatment liquid of the filter passes; a drain piping, which is connected to the primary side supply piping, and delivers the treatment liquid to the drain part; a switching part, which is provided on the primary side supply piping , Switching between the state in which the dissolution module is in communication with the filter and the state in which the dissolution module is in communication with the drain; the particle measuring section is arranged on the primary side of the switching section, Measuring the amount of particles in the treatment liquid passing through the primary side supply pipe; and a control unit that controls the switching operation performed by the switching unit in accordance with the amount of particles measured by the particle measuring unit.
第二形態是第一形態的處理液供給裝置,其中所述粒子測定部測定通過所述一次側供給配管中的與連接有所述排液配管的部分相比更靠一次側的所述處理液中的所述粒子量。 The second aspect is the processing liquid supply device of the first aspect, in which the particle measuring unit measures the processing liquid on the primary side of the primary supply pipe that is closer to the primary side than the portion connected to the drain pipe The amount of the particles in.
第三形態是第一形態或第二形態的處理液供給裝置,其中所述切換部包括:供給閥,插裝於所述一次側供給配管上,將所述一次側供給配管內的流路開閉;以及排液閥,插裝於所述排液配管上,將所述排液配管內的流路開閉;且所述控制部控制所述供給閥及所述排液閥的開閉動作。 The third aspect is the processing liquid supply device of the first aspect or the second aspect, wherein the switching unit includes a supply valve that is inserted into the primary side supply pipe and opens and closes the flow path in the primary side supply pipe And a drain valve inserted in the drain pipe to open and close the flow path in the drain pipe; and the control unit controls the opening and closing actions of the supply valve and the drain valve.
第四形態是第三形態的處理液供給裝置,其中所述控制部於將所述供給閥關閉且將所述排液閥打開的狀態下,對應於由 所述粒子測定部所測定的所述粒子量,藉由輸出裝置來向外部輸出通知。 The fourth aspect is the processing liquid supply device of the third aspect, wherein the control unit corresponds to the state in which the supply valve is closed and the drain valve is opened. The particle amount measured by the particle measuring unit is notified to the outside by an output device.
第五形態是第三形態或第四形態的處理液供給裝置,其中所述一次側供給配管於所述切換部的二次側分支成多個分支配管,於所述多個分支配管各者上分別連接有一個所述過濾器。 The fifth aspect is the processing liquid supply device of the third aspect or the fourth aspect, wherein the primary side supply pipe is branched into a plurality of branch pipes on the secondary side of the switching section, and each of the plurality of branch pipes One of the filters is connected respectively.
第六形態是一種對基板進行處理的基板處理裝置,其包括:第一形態至第五形態的任一個處理液供給裝置、及利用已由所述處理液供給裝置的所述過濾器過濾的所述處理液對基板進行處理的處理部。 The sixth aspect is a substrate processing apparatus for processing a substrate, which includes: any one of the processing liquid supply device of the first to fifth aspects, and the filter that has been filtered by the filter of the processing liquid supply device. The processing unit for processing the substrate with the processing liquid.
第七形態是一種供給處理液的處理液供給方法,其包括:(a)藉由溶解模組來使氣體溶解於處理液的原液中的步驟;(b)將溶解有所述氣體的所述處理液自所述溶解模組朝一次側供給配管中供給的步驟;(c)利用與所述一次側供給配管連接的過濾器對通過了所述一次側供給配管的所述處理液進行過濾的步驟;(d)測定通過所述一次側供給配管的所述處理液中的粒子量的步驟;以及(e)對應於所述步驟(d)中所測定的所述粒子量,停止所述步驟(c)中的朝所述過濾器中的所述處理液的供給,並且經由自所述一次側供給配管進行分支的排液配管將通過了所述溶解模組的所述處理液輸送至排液部中的步驟。 The seventh aspect is a processing liquid supply method for supplying processing liquid, which includes: (a) a step of dissolving a gas in a raw solution of the processing liquid by a dissolving module; (b) dissolving the gas The process of supplying the processing liquid from the dissolution module to the primary side supply pipe; (c) filtering the processing liquid that has passed through the primary side supply pipe with a filter connected to the primary side supply pipe Step; (d) a step of measuring the amount of particles in the treatment liquid passing through the primary side supply pipe; and (e) corresponding to the amount of particles measured in the step (d), stopping the step (c) is directed to the supply of the processing liquid in the filter, and the processing liquid that has passed through the dissolution module is sent to the discharge pipe via a discharge pipe branched from the primary side supply pipe Steps in the liquid section.
根據第一形態的處理液供給裝置,可排出處理液直至通過了溶解模組的處理液中的粒子量減少為止。藉此,可減少通過了溶 解模組的處理液中的粒子量。另外,藉由停止朝過濾器中的處理液的供給,並使一次側供給配管與排水配管連通,可將一次側供給配管內的包含粒子的處理液不經由過濾器而排出。藉此,可減少包含粒子的處理液通過過濾器,因此可謀求過濾器的長壽命化。另外,可減少包含粒子的處理液朝過濾器的二次側擴散。 According to the processing liquid supply device of the first aspect, the processing liquid can be discharged until the amount of particles in the processing liquid that has passed through the dissolution module decreases. In this way, the The amount of particles in the treatment solution of the solution module. In addition, by stopping the supply of the processing liquid to the filter and connecting the primary-side supply pipe with the drainage pipe, the processing liquid containing particles in the primary-side supply pipe can be discharged without passing through the filter. Thereby, it is possible to reduce the processing liquid containing particles from passing through the filter, so that the life of the filter can be increased. In addition, it is possible to reduce the diffusion of the treatment liquid containing particles to the secondary side of the filter.
根據第二形態的處理液供給裝置,於一次側供給配管中,可測定朝向排液配管的處理液中的粒子量。因此,可確認於排液處理中粒子量是否已減少。 According to the processing liquid supply device of the second aspect, it is possible to measure the amount of particles in the processing liquid toward the discharge pipe in the primary side supply pipe. Therefore, it can be confirmed whether or not the amount of particles has been reduced during the drainage process.
根據第三形態的處理液供給裝置,控制部根據經測定的粒子量,自動地對供給閥及排液閥進行開閉控制來進行排液處理,因此可減輕作業者負擔。 According to the processing liquid supply device of the third aspect, the control unit automatically controls the opening and closing of the supply valve and the drain valve to perform the drain treatment based on the measured particle amount, so that the burden on the operator can be reduced.
根據第四形態的處理液供給裝置,對應於排液處理中所測定的粒子量向外部進行通知,藉此作業者可恰當地認知零件的保養.更換時期等。 According to the processing liquid supply device of the fourth aspect, the amount of particles measured during the discharge process is notified to the outside, whereby the operator can appropriately recognize the maintenance of the parts. Replacement period, etc.
根據第五形態的處理液供給裝置,於多個過濾器的一次側進行排液,藉此可減少高濃度的粒子通過各過濾器。因此,可謀求各過濾器的長壽命化,並且可減少粒子朝各過濾器的二次側擴散。 According to the processing liquid supply device of the fifth aspect, the liquid is discharged on the primary side of the plurality of filters, thereby reducing the passage of high-concentration particles through each filter. Therefore, it is possible to increase the life of each filter and to reduce the diffusion of particles to the secondary side of each filter.
根據第六形態的基板處理裝置,可排出處理液直至通過了溶解模組的處理液中的粒子量減少為止。藉此,可減少通過了溶解模組的處理液中的粒子量。另外,藉由停止朝過濾器中的處理液的供給,並使一次側供給配管與排水配管連通,可將一次側 供給配管內的包含粒子的處理液不經由過濾器而排出。藉此,可謀求過濾器的長壽命化。另外,可減少粒子與包含粒子的處理液被一同供給至處理部中。 According to the substrate processing apparatus of the sixth aspect, the processing liquid can be discharged until the amount of particles in the processing liquid that has passed through the dissolution module decreases. Thereby, the amount of particles in the treatment liquid that has passed through the dissolution module can be reduced. In addition, by stopping the supply of processing liquid to the filter and connecting the primary side supply pipe with the drain pipe, the primary side The processing liquid containing particles in the supply pipe is discharged without passing through the filter. In this way, the life of the filter can be increased. In addition, the particles can be reduced to be supplied to the processing section together with the processing liquid containing the particles.
根據第七形態的處理液供給方法,可排出處理液直至通過了溶解模組的處理液中的粒子量減少為止。藉此,可減少通過了溶解模組的處理液中的粒子量。另外,藉由停止朝過濾器中的處理液的供給,並使一次側供給配管與排水配管連通,可將一次側供給配管內的包含粒子的處理液不經由過濾器而排出。藉此,可減少包含粒子的處理液通過過濾器,因此可謀求過濾器的長壽命化。另外,可減少包含粒子的處理液朝過濾器的二次側擴散。 According to the processing liquid supply method of the seventh aspect, the processing liquid can be discharged until the amount of particles in the processing liquid that has passed through the dissolution module decreases. Thereby, the amount of particles in the treatment liquid that has passed through the dissolution module can be reduced. In addition, by stopping the supply of the processing liquid to the filter and connecting the primary-side supply pipe with the drainage pipe, the processing liquid containing particles in the primary-side supply pipe can be discharged without passing through the filter. Thereby, it is possible to reduce the processing liquid containing particles from passing through the filter, so that the life of the filter can be increased. In addition, it is possible to reduce the diffusion of the treatment liquid containing particles to the secondary side of the filter.
1:基板處理裝置 1: Substrate processing device
2:處理單元(處理部) 2: Processing unit (processing department)
3:處理液供給單元(處理液供給裝置) 3: Processing liquid supply unit (processing liquid supply device)
4:旋轉夾盤 4: Rotating chuck
5:噴嘴 5: Nozzle
8:旋轉底座 8: Rotating base
9:旋轉驅動機構 9: Rotary drive mechanism
30:溶解模組 30: Dissolve the module
31a~31d:過濾器 31a~31d: filter
32:一次側供給配管 32: Primary side supply piping
320a~320d:分支配管 320a~320d: branch piping
322:配管部分 322: Piping part
33:供給閥 33: Supply valve
34a~34d:二次側供給配管 34a~34d: Secondary side supply piping
35:泵 35: pump
36:供氣閥 36: air supply valve
41:排液配管 41: Drainage piping
42:排液閥 42: Drain valve
51:粒子測定部 51: Particle Measurement Department
52:控制部 52: Control Department
53a~53d:噴出閥 53a~53d: spray valve
510:採樣配管 510: Sampling piping
90:排液槽(排液部) 90: Drain tank (drain part)
92:排出配管 92: Discharge piping
94:儲存部 94: Storage Department
940:程式庫 940: library
D1、D2:分支部(連接部分) D1, D2: branch part (connection part)
W:晶圓(半導體晶圓) W: Wafer (semiconductor wafer)
S1~S6:步驟 S1~S6: steps
圖1是示意性地表示實施方式的基板處理裝置1的圖。
FIG. 1 is a diagram schematically showing a
圖2是用於說明基板處理裝置1的主要部分的電氣結構的方塊圖。
FIG. 2 is a block diagram for explaining the electrical configuration of the main part of the
圖3是用於說明處理液供給單元3的排液處理時的動作的流程圖。
FIG. 3 is a flowchart for explaining the operation of the treatment
圖4是用於說明由控制部52所進行的排液處理時的控制內容的時序圖。
FIG. 4 is a time chart for explaining the content of control at the time of liquid discharge processing performed by the
以下,一面參照隨附的圖式,一面對本發明的實施方式進行說明。再者,該實施方式中記載的構成元件只是例示,並非 將本發明的範圍僅限定於該些構成元件的意思。於圖式中,為了容易理解,有時視需要將各部的尺寸或數量誇張或簡化來圖示。 Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the constituent elements described in this embodiment are only examples, not The meaning of limiting the scope of the present invention to only these constituent elements. In the drawings, for ease of understanding, sometimes the size or number of each part is exaggerated or simplified as necessary.
<1.實施方式> <1. Implementation mode>
圖1是示意性地表示實施方式的基板處理裝置1的圖。基板處理裝置1對作為基板的一例的半導體晶圓W(以下,僅稱為「晶圓W」)進行處理。基板處理裝置1包括多個處理單元2(處理部)、及將處理液供給至各處理單元2中的處理液供給單元3(處理液供給裝置)。此處,自一個處理液供給單元3對四個處理單元2供給處理液,但亦可對各處理單元設置專用的處理液供給單元。
FIG. 1 is a diagram schematically showing a
處理單元2是利用處理液對晶圓W一片一片地進行處理的逐片型的裝置。處理單元2包括水平地保持晶圓W並使其旋轉的旋轉夾盤4、及將作為處理液的處理液供給至晶圓W上的噴嘴5。
The
旋轉夾盤4包括大致水平地保持晶圓W並可環繞垂直軸線進行旋轉的旋轉底座8、及使該旋轉底座8環繞垂直軸線進行旋轉的旋轉驅動機構9。可將噴嘴5設為晶圓W上的處理液的著液位置已被固定的固定噴嘴,亦可設為著液位置於自晶圓W的旋轉中心至晶圓W的邊緣的範圍內移動的可動噴嘴(掃描噴嘴)。自處理液供給單元3將處理液供給至噴嘴5中。
The
處理液供給單元3包括:溶解模組30、過濾器31a~過濾器31d、一次側供給配管32、供給閥33、二次側供給配管34a~二次側供給配管34d、泵35、供氣閥36、排液配管41、排液閥
42、粒子測定部51、控制部52、噴出閥53a~噴出閥53d。
The processing
溶解模組30是生成將二氧化碳(CO2)與作為處理液的原液的純水(DIW)混合的碳酸水的裝置。自純水源將純水供給至溶解模組30中,並且自二氧化碳源(儲氣瓶等)將二氧化碳供給至溶解模組30中。純水的供給藉由設置於將純水源與溶解模組30連接的配管上的泵35來進行。另外,二氧化碳的供給藉由插裝於將溶解模組30與二氧化碳源連接的配管上的供氣閥36來控制。溶解模組30例如包括中空絲膜,將二氧化碳經由所述中空絲膜而供給至純水中,藉此使二氧化碳溶解於純水中。於處理單元2中,利用使二氧化碳溶解於純水中而成的處理液(碳酸水)對晶圓W進行處理(淋洗處理),藉此減少晶圓W的帶電。
The
過濾器31a~過濾器31d對被供給至各處理單元2中的處理液進行過濾。過濾器31a~過濾器31d例如包括無數的細孔,對被供給至處理單元2中的處理液進行過濾,而自處理液中去除粒子。
The filter 31
一次側供給配管32形成處理液的流路。一次側供給配管32的一端與溶解模組30連接。另外,一次側供給配管32的另一端側於中途的分支部D1處分支成多個分支配管320a~分支配管320d。分支配管320a~分支配管320d與過濾器31a~過濾器31d分別連接。
The primary
供給閥33插裝於一次側供給配管32上。更詳細而言,供給閥33設置於溶解模組30與分支部D1之間。供給閥33將一
次側供給配管32形成的流路開閉,藉此控制自溶解模組30朝過濾器31a~過濾器31d中的處理液供給的開關。
The
二次側供給配管34a的一端與過濾器31a連接,另一端與多個處理單元2中的一個噴嘴5連接。關於其他二次側供給配管34b~二次側供給配管34d,亦一端與過濾器31b~過濾器31d的一者連接,另一端與多個處理單元2中的一個噴嘴5連接。二次側供給配管34a~二次側供給配管34d將已由各自連接的過濾器31a~過濾器31d過濾的處理液供給至處理單元2的噴嘴5中。
One end of the secondary
噴出閥53a~噴出閥53d分別插裝於二次側供給配管34a~二次側供給配管34d各者上。噴出閥53a~噴出閥53d將二次側供給配管34a~二次側供給配管34d形成的處理液的流路開閉,藉此控制自各噴嘴5中的處理液的噴出的開關。再者,噴出閥53a~噴出閥53d亦能夠以可調整二次側供給配管34a~二次側供給配管34d的流路的開度的方式構成。藉由所述開度調整,而可控制自各噴嘴5中的處理液的每單位時間的噴出量。
The
排液配管41自一次側供給配管32的供給閥33的一次側的分支部D2進行分支,並與排液槽90連接。排液槽90是為了蓄積已自處理液供給單元3中排出的處理液而設置。排液槽90中所蓄積的處理液經由排出配管92而朝基板處理裝置1的機外排液。
The
排液閥42插裝於排液配管41上。排液閥42將排液配管41形成的流路開閉,藉此控制自一次側供給配管32內朝排液
槽90中的處理液排出的開關。
The
供給閥33及排液閥42是設置於一次側供給配管32上,於溶解模組30與過濾器31a~過濾器31d連通的狀態、及溶解模組30與排液槽90(排液部)連通的狀態之間進行切換的切換部的一例。
The
粒子測定部51測定通過一次側供給配管32的處理液中的粒子量。粒子測定部51例如為對處理液中所存在的粒子(塵埃或微粒子、雜質等)進行計數的測量器(粒子計數器)。粒子測定部51例如測量來自粒子的光的散射的強度,並將與所述粒子的大小成比例的光強度以電訊號的形式取出,藉此測定粒子量。
The
粒子測定部51測定通過一次側供給配管32中的自溶解模組30至分支部D2為止間的配管部分322的處理液中的粒子量。此處,粒子測定部51具有作為所述配管部分322的旁路的採樣配管510。將採樣配管510設為直徑比一次側供給配管32小。粒子測定部51測定通過採樣配管510的粒子量,藉此測定通過配管部分322的處理液中的粒子量。
The
圖2是用於說明基板處理裝置1的主要部分的電氣結構的方塊圖。控制部52包括微電腦,按照規定的控制程式對基板處理裝置1中所包括的控制對象進行控制。尤其,控制部52對泵35、供氣閥36、供給閥33、排液閥42及噴出閥53a~噴出閥53d進行控制。控制部52與粒子測定部51連接。再者,並非必須藉由控制部52來控制泵35及供氣閥36。例如,亦可於處理液供給單元
3的啟動時始終驅動泵35,藉此自純水源中始終汲出純水。
FIG. 2 is a block diagram for explaining the electrical configuration of the main part of the
另外,控制部52與儲存部94連接。於儲存部94中保存有程式庫(recipe)940。於程式庫940中,以規定的資料形式記述有於處理單元2中應對晶圓W實施的處理的條件。具體而言,記述有處理程序或處理內容(處理時間、溫度、壓力或供給量)等。控制部52可存取儲存部94而適宜讀出程式庫940。
In addition, the
控制部52根據由粒子測定部51所測定的通過一次側供給配管32的處理液中的粒子量,判斷對於過濾器31a~過濾器31d的處理液的供給或停止。詳細而言,於粒子量超過了規定的排液基準值的情況下,控制部52控制供給閥33及排液閥42的開閉,藉此進行排出溶解模組30及一次側供給配管32內的處理液的排液處理。於進行排液處理的情況下,控制部52將供給閥33關閉,並將排液閥42打開。於該狀態下,已由泵35輸送至溶解模組30中的處理液經由溶解模組30及一次側供給配管32後,流入排液配管41中,然後被排液。藉此,藉由處理液來適宜沖洗蓄積於溶解模組30或一次側供給配管32等中的粒子。
The
於排液處理時,將供氣閥36關閉,藉此只有不含二氧化碳的純水通過溶解模組30及一次側供給配管32。於此情況下,主要藉由純水來對溶解模組30及一次側供給配管32的內部進行淨化。但是,亦可於排液處理時將二氧化碳供給至溶解模組30中,藉此使包含二氧化碳的處理液通過一次側供給配管32。
During the drainage process, the
<處理液供給單元3的動作說明>
<Operation Description of Process
於將處理液供給至各處理單元2中的情況下,控制部52驅動泵35,並且將供氣閥36打開。藉此,於溶解模組30中生成處理液(碳酸水)。而且,控制部52使供給閥33變成打開狀態,使排液閥42變成關閉狀態,經由一次側供給配管32而將溶解模組30中所生成的處理液供給至過濾器31a~過濾器31d中(供給步驟)。於是,處理液分別通過過濾器31a~過濾器31d,藉此對處理液進行過濾(過濾步驟)。若將藉由所述過濾而去除了粒子的處理液輸送至各處理單元2中,則自各處理單元2的噴嘴5供給至晶圓W上,而對晶圓W進行處理。
In the case of supplying the processing liquid to each
圖3是用於說明處理液供給單元3的排液處理時的動作的流程圖。圖4是用於說明由控制部52所進行的排液處理時的控制內容的時序圖。
FIG. 3 is a flowchart for explaining the operation of the treatment
如圖3所示,於處理液供給單元3中的排液處理的動作中,包括控制部52根據規定的判斷基準,判斷是否需要排液處理的步驟S1。於該步驟S1中,如上所述,將粒子量作為判斷基準。
As shown in FIG. 3, the operation of the liquid discharge treatment in the treatment
具體而言,粒子測定部51測定粒子量(粒子量測定步驟)。而且,控制部52若接收作為其測定結果的粒子量的資訊,則判斷所述粒子量是否超過規定的排液基準值。於未超過的情況(步驟S1中,否(No))下,再次執行步驟S1。再者,於此情況下,步驟S1的判斷以於粒子測定部51測定粒子量的每個循環中進行為宜。於粒子量超過了排液基準值的情況(步驟S1中,是(Yes))下,控制部52執行接下來的步驟S2。
Specifically, the
於步驟S2中,控制部52使供給閥33自打開狀態變成關閉狀態。如圖4所示,若將供給閥33關閉,則自將處理液供給至過濾器31a~過濾器31d中的狀態變成停止供給的狀態。
In step S2, the
控制部52若將供給閥33關閉,則於比其略晚、或與其大致同時的時機,使排液閥42自關閉狀態變成打開狀態(圖3的步驟S3,參照圖4)。藉此,變成溶解模組30、一次側供給配管32(詳細而言,配管部分322)及排液配管41與排液槽90連通的狀態。此時,如圖4所示,泵35為運轉狀態。另外,供氣閥36被關閉。因此,不含二氧化碳的處理液的原液(純水)自溶解模組30經由一次側供給配管32而流入排液配管41中,然後被朝排液槽90排出(排液步驟)。再者,如上所述,於排液步驟中,並非必須將供氣閥36關閉。即,亦可對包含二氧化碳的處理液進行排液。
When the
如圖4所示,於本實施方式的排液步驟中,將排液閥42打開後,於供給閥33維持關閉的狀態下,進行多次(此處為四次)將排液閥42僅關閉規定時間T1後再次僅打開規定時間的循環控制。如此,藉由將排液閥42定期地關閉,可使溶解模組30及一次側供給配管32內的處理液的流動間歇性地停止。以下,將此種排液處理稱為「快速排液處理」。根據快速排液處理,可對處理液的流動賦予緩急,因此已附著於溶解模組30及一次側供給配管32的內部的粒子容易脫落,因此可期待粒子的去除效率的提昇。
As shown in FIG. 4, in the draining step of this embodiment, after the
再者,控制部52於快速排液處理中,當對排液閥42進
行開閉控制時,亦可如圖4中由虛線所示般,對泵35的驅動進行開關控制。即,亦可對準將排液閥42關閉的時機使泵35停止,對準將排液閥42打開的時機驅動泵35。藉此,於排液閥42的關閉時可抑制溶解模組30或一次側供給配管32的內部的壓力上昇。因此,可減輕施加至溶解模組30或泵35中的負擔。
Furthermore, the
另外,於排液步驟的期間內,亦可將排液閥42始終打開,對泵35的驅動進行開關控制。於此情況下,亦可執行快速排液處理。另外,並非必須執行快速排液處理。即,於排液步驟中,亦可始終驅動泵35,並且將排液閥42始終打開。
In addition, during the draining step, the
另外,於排液步驟中,亦可於控制部52已判斷滿足特定的條件時,進行快速排液處理。所謂「特定的條件」,例如是指由粒子測定部51所測定的粒子量為超過規定的閾值的異常值時。
In addition, in the liquid discharging step, when the
於步驟S3中,將排液閥42打開後,控制部52判斷由粒子測定部51所測定的粒子量是否已變成規定的容許值以下(步驟S4)。於藉由處理液的排出而已將溶解模組30及一次側供給配管32內部的粒子去除的情況下,期待粒子量減少。因此,於步驟S5中,藉由監視粒子量來判斷是否繼續排液。
In step S3, after the
於粒子量已超過規定的容許值的情況(步驟S4中,否)下,返回至步驟S3,繼續進行處理液的排出。另一方面,於粒子量藉由處理液的排出而已變成規定的容許值以下的情況(步驟S4中,是)下,控制部52使排液閥42變成關閉狀態(圖3的步驟S5,參照圖4)。藉由將排液閥42關閉,而停止處理液的排出。如
此,控制部52監視粒子量來進行排液處理,藉此可抑制過度地進行排液處理。
When the amount of particles has exceeded the predetermined allowable value (No in step S4), the process returns to step S3, and the discharge of the treatment liquid is continued. On the other hand, when the amount of particles has become below the predetermined allowable value due to the discharge of the treatment liquid (Yes in step S4), the
再者,於步驟S4中,控制部52亦可對應於粒子測定部51測定的粒子量,藉由輸出裝置(顯示裝置、印刷裝置或燈等)來向外部輸出通知。例如,關於排液處理的繼續時間(或處理液的排出量),可考慮事先決定基準值。即,於步驟S4中,當即便排液處理的繼續時間(或處理液的排出量)超過基準值,粒子量亦不低於容許值時,控制部52以藉由輸出裝置來向外部輸出通知為宜。藉由該通知,作業者可認知處理液供給單元3的異常,因此可恰當地認知溶解模組30等的零件的保養.更換時期。
Furthermore, in step S4, the
控制部52若使排液閥42變成關閉狀態,則於比其略晚、或與其大致同時的時機,使供給閥33自關閉狀態變成打開狀態(圖3的步驟S6,參照圖4)。另外,藉由將供氣閥36打開,而對溶解模組30供給二氧化碳。藉此,變成包含二氧化碳的處理液再次於一次側供給配管32內流動,並被供給至過濾器31a~過濾器31d各者中的狀態(參照圖4)。即,變成處理液供給單元3可對處理單元2供給處理液的狀態。
When the
如以上般,根據本實施方式的基板處理裝置1,於處理液供給單元3中,將供給閥33關閉(步驟S2),並將排液閥42打開(步驟S3)。藉此,可減少通過了溶解模組30的處理液中的粒子量。另外,可於與過濾器31a~過濾器31d相比更靠一次側(即,處理液的供給源側)排出處理液。因此,已於溶解模組30、
一次側供給配管32或其以外的發塵源中產生的粒子不經由過濾器31a~過濾器31d,而被排出至外部。於此情況下,可減少包含許多已於過濾器31a~過濾器31d的一次側產生的粒子的處理液通過過濾器31a~過濾器31d。藉此,可謀求過濾器31a~過濾器31d的長壽命化。
As described above, according to the
另外,由於可於過濾器31a~過濾器31d的一次側排出包含許多的粒子的處理液,因此可減少包含所述粒子的處理液朝過濾器31a~過濾器31d的二次側擴散的風險。
In addition, since the processing liquid containing many particles can be discharged from the primary side of the
另外,於根據由粒子測定部51所測定的粒子量進行排液處理的情況下,可恰當地抑制包含高濃度的粒子的處理液通過過濾器31a~過濾器31d。另外,可抑制包含許多粒子的處理液被用於晶圓W的處理。另外,可抑制多餘地進行排液處理。
In addition, when the liquid discharge treatment is performed based on the amount of particles measured by the
<2.變形例> <2. Modifications>
以上,對實施方式進行了說明,但本發明並不限定於如上所述的實施方式,可進行各種變形。 The embodiment has been described above, but the present invention is not limited to the embodiment described above, and various modifications can be made.
例如,關於粒子測定部51測定的粒子量,亦可事先設定成為對溶解模組30等的零件進行保養.更換的標準的維護基準值。具體而言,於粒子量已超過規定的維護基準值的情況下,控制部52亦可藉由輸出裝置(顯示裝置、印刷裝置或燈等)來向外部輸出通知。藉由向外部進行通知,作業者可恰當地認知溶解模組30等的零件的保養.更換時期。
For example, the amount of particles measured by the
另外,供給閥33及排液閥42亦可如所述實施方式般,
以可於控制部52的控制下進行電動開閉的方式構成,但亦能夠以可手動地開閉的方式構成至少一者。但是,藉由自動地進行開閉控制,可減輕作業者負擔。
In addition, the
另外,亦可考慮利用兼具供給閥33及排液閥42的功能的三通閥來代替將供給閥33及排液閥42作為切換部插裝於一次側供給配管32上。於此情況下,以於一次側供給配管32中的與排液配管41連接的分支部D2上設置三通閥為宜。
In addition, a three-way valve having both the functions of the
處理液供給單元3供給的處理液並不限定於已使二氧化碳溶解者,例如亦可設為已使氮氣等的其他種類的氣體溶解者。另外,亦可將於碳酸水或已使氮氣等的其他種類的氣體溶解的液體中混合藥液等的其他液體而成者設為處理液。
The processing liquid supplied by the processing
所述實施方式的基板處理裝置1是於處理單元2中利用處理液對晶圓W一片一片地進行處理的逐片式的裝置。但是,本發明亦可應用於包括利用處理液同時對多片晶圓W進行處理的批次式的處理單元的基板處理裝置。
The
另外,於所述實施方式中,作為成為處理對象的基板,採用了晶圓W,但並不限定於晶圓W,例如亦可將液晶顯示裝置用玻璃基板、電漿顯示器用基板、FED用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等的其他種類的基板作為處理對象。 In addition, in the above-mentioned embodiment, the wafer W is used as the substrate to be processed, but it is not limited to the wafer W. For example, a glass substrate for a liquid crystal display device, a substrate for a plasma display, and a substrate for FED may be used. Other types of substrates such as substrates, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells are treated as objects.
雖然對本發明進行了詳細說明,但所述說明於所有方面均為例示,本發明並不限定於此。將未例示的無數的變形例解釋 為可不脫離本發明的範圍而想到者。所述各實施方式及各變形例中所說明的各結構只要不相互矛盾,則可適宜組合、或省略。 Although this invention was demonstrated in detail, the said description is an illustration in all respects, and this invention is not limited to this. Explain countless variants that are not illustrated It is thought of so as not to depart from the scope of the present invention. The respective structures described in the respective embodiments and the respective modifications may be appropriately combined or omitted as long as they do not contradict each other.
1‧‧‧基板處理裝置 1‧‧‧Substrate processing equipment
2‧‧‧處理單元(處理部) 2‧‧‧Processing Unit (Processing Department)
3‧‧‧處理液供給單元(處理液供給裝置) 3‧‧‧Processing liquid supply unit (processing liquid supply device)
4‧‧‧旋轉夾盤 4‧‧‧Rotating Chuck
5‧‧‧噴嘴 5‧‧‧Nozzle
8‧‧‧旋轉底座 8‧‧‧Rotating base
9‧‧‧旋轉驅動機構 9‧‧‧Rotary drive mechanism
30‧‧‧溶解模組 30‧‧‧Dissolving Module
31a~31d‧‧‧過濾器 31a~31d‧‧‧Filter
32‧‧‧一次側供給配管 32‧‧‧Primary side supply piping
320a~320d‧‧‧分支配管 320a~320d‧‧‧Branch piping
322‧‧‧配管部分 322‧‧‧Piping part
33‧‧‧供給閥 33‧‧‧Supply valve
34a~34d‧‧‧二次側供給配管 34a~34d‧‧‧Secondary side supply piping
35‧‧‧泵 35‧‧‧Pump
36‧‧‧供氣閥 36‧‧‧Air supply valve
41‧‧‧排液配管 41‧‧‧Drain piping
42‧‧‧排液閥 42‧‧‧Drain valve
51‧‧‧粒子測定部 51‧‧‧Particle Measurement Department
52‧‧‧控制部 52‧‧‧Control Department
53a~53d‧‧‧噴出閥 53a~53d‧‧‧Ejection valve
510‧‧‧採樣配管 510‧‧‧Sampling pipe
90‧‧‧排液槽(排液部) 90‧‧‧Drain tank (drain part)
92‧‧‧排出配管 92‧‧‧Exhaust pipe
D1、D2‧‧‧分支部(連接部分) D1, D2‧‧‧Branch part (connection part)
W‧‧‧晶圓(半導體晶圓) W‧‧‧wafer (semiconductor wafer)
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