CN111788660A - Processing liquid supply device, substrate processing device, and processing liquid supply method - Google Patents
Processing liquid supply device, substrate processing device, and processing liquid supply method Download PDFInfo
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- CN111788660A CN111788660A CN201980015466.XA CN201980015466A CN111788660A CN 111788660 A CN111788660 A CN 111788660A CN 201980015466 A CN201980015466 A CN 201980015466A CN 111788660 A CN111788660 A CN 111788660A
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- 239000007788 liquid Substances 0.000 title claims abstract description 247
- 238000012545 processing Methods 0.000 title claims abstract description 136
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 title claims description 56
- 239000002245 particle Substances 0.000 claims abstract description 107
- 238000004090 dissolution Methods 0.000 claims abstract description 45
- 230000008569 process Effects 0.000 claims description 25
- 239000000243 solution Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 4
- 239000011550 stock solution Substances 0.000 claims description 3
- 208000028659 discharge Diseases 0.000 description 54
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 33
- 235000012431 wafers Nutrition 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 229910002092 carbon dioxide Inorganic materials 0.000 description 16
- 239000001569 carbon dioxide Substances 0.000 description 16
- 238000005259 measurement Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- 238000007599 discharging Methods 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012510 hollow fiber Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
- B01D35/02—Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a technique for reducing the amount of particles in a treatment liquid passing through a dissolution module. The processing liquid supply unit 3 is a device for supplying the processing liquid filtered by the filters 31a to 31d to the plurality of processing units 2. The supply valve 33 is inserted into the primary-side supply pipe 32 connected to the filters 31a to 31 d. Further, a drain pipe 41 is connected to the primary side of the supply valve 33 in the primary-side supply pipe 32. The drain valve 42 is inserted into the drain pipe 41. The controller 52 closes the supply valve 33 and opens the drain valve 42 in accordance with the amount of particles in the treatment liquid, thereby draining the treatment liquid through the dissolution module 30, the primary-side supply pipe 32, and the drain pipe 41.
Description
Technical Field
The present invention relates to a processing liquid supply apparatus and a processing liquid supply method for supplying a processing liquid to a processing unit for processing a substrate to be processed. The substrate to be processed includes, for example: a semiconductor wafer, a glass substrate for a liquid crystal Display device, a substrate for a plasma Display device, a substrate for a Field Emission Display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like.
Background
In a manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus is used which processes a substrate such as a semiconductor wafer with a processing liquid. A substrate processing apparatus of a sheet-by-sheet type that processes substrates one by one includes, for example, a processing section having a spin chuck that horizontally holds and rotates substrates and a processing liquid nozzle that discharges a processing liquid toward the substrates held by the spin chuck, in a main body. The substrate processing apparatus includes a processing liquid supply device different from the main body in order to supply the processing liquid to the processing liquid nozzle. A treatment liquid supply pipe extending from the treatment liquid supply device is connected to the treatment liquid nozzle, and the treatment liquid stored in a treatment liquid tank of the treatment liquid supply device is supplied through the treatment liquid supply pipe (for example, patent document 1).
In addition, the substrate is also processed by the processing liquid in which a predetermined gas is dissolved by the dissolution module. For example, when a substrate is treated with a rinse solution containing pure water as a main component, carbonated water in which carbon dioxide is dissolved in the pure water at a predetermined concentration may be used (for example, patent document 2). The substrate is rinsed with carbonated water to prevent the substrate from being charged.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2006-351709
Patent document 2: japanese patent laid-open publication No. 2016-157895
Disclosure of Invention
Problems to be solved by the invention
However, there is a concern that particles (foreign matter) may be generated in the treatment liquid passing through the dissolution module due to the reason such as the aged deterioration of the dissolution module caused by long-term use. As the amount of particles in the processing liquid is strongly required to be removed along with the miniaturization of the semiconductor structure, a technique for reducing the amount of particles in the processing liquid passing through the dissolution module is required.
Accordingly, an object of the present invention is to provide a technique for reducing the amount of particles in a processing liquid passing through a dissolution module.
Means for solving the problems
In order to solve the problem, a first embodiment is a process liquid supply apparatus that supplies a process liquid, including: a dissolving module for dissolving the gas in the stock solution of the treatment solution; a primary-side supply pipe having one end connected to the secondary side of the dissolving module; a filter connected to the other end of the primary-side supply pipe and configured to filter the treatment liquid; a secondary-side supply pipe connected to the secondary side of the filter and forming a flow path through which the treatment liquid having passed through the filter passes; a liquid discharge pipe connected to the primary side supply pipe and configured to supply the treatment liquid to a liquid discharge portion; a switching unit provided in the primary-side supply pipe and configured to switch between a state in which the dissolution module is in communication with the filter and a state in which the dissolution module is in communication with the liquid discharge unit; a particle measuring unit provided on the primary side of the switching unit and measuring the amount of particles in the processing liquid passing through the primary-side supply pipe; and a control unit that controls the switching operation performed by the switching unit in accordance with the amount of particles measured by the particle measuring unit.
A second embodiment is the processing liquid supply apparatus of the first embodiment, wherein the particle measurement unit measures the amount of particles in the processing liquid passing through the primary side supply pipe on the primary side of the portion to which the liquid discharge pipe is connected.
A third embodiment is the treatment liquid supply apparatus of the first or second embodiment, wherein the switching section includes: a supply valve inserted into the primary-side supply pipe to open and close a flow path in the primary-side supply pipe; and a drain valve inserted in the drain pipe to open and close a flow path in the drain pipe; and the control unit controls opening and closing operations of the supply valve and the drain valve.
A fourth embodiment is the processing liquid supply apparatus according to the third embodiment, wherein the control unit outputs a notification to the outside through an output device in accordance with the amount of particles measured by the particle measuring unit in a state where the supply valve is closed and the drain valve is opened.
A fifth embodiment is the treatment liquid supply apparatus of the third or fourth embodiment, wherein the primary-side supply pipe is branched into a plurality of branch pipes at a secondary side of the switching unit, and one filter is connected to each of the plurality of branch pipes.
A sixth embodiment is a substrate processing apparatus that processes a substrate, including: the present invention relates to a processing liquid supply apparatus and a processing unit for processing a substrate with a processing liquid filtered by a filter of the processing liquid supply apparatus.
A seventh embodiment is a process liquid supply method of supplying a process liquid, including: (a) dissolving a gas in a raw solution of a treatment solution by a dissolving module; (b) supplying the treatment liquid in which the gas is dissolved from the dissolving module to a primary-side supply pipe; (c) filtering the treatment liquid that has passed through the primary-side supply pipe by a filter connected to the primary-side supply pipe; (d) measuring an amount of particles in the treatment liquid passing through the primary-side supply pipe; and (e) stopping the supply of the treatment liquid to the filter in the step (c) in accordance with the amount of the particles measured in the step (d), and conveying the treatment liquid having passed through the dissolution module to a liquid discharge unit via a liquid discharge pipe branched from the primary side supply pipe.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the treatment liquid supply apparatus of the first embodiment, the treatment liquid can be discharged until the amount of particles in the treatment liquid passing through the dissolution module decreases. This can reduce the amount of particles in the processing liquid passing through the dissolution module. Further, by stopping the supply of the treatment liquid to the filter and allowing the primary-side supply pipe to communicate with the drain pipe, the treatment liquid containing particles in the primary-side supply pipe can be discharged without passing through the filter. This reduces the passage of the treatment liquid containing particles through the filter, and therefore the life of the filter can be prolonged. In addition, the diffusion of the treatment liquid containing particles toward the secondary side of the filter can be reduced.
According to the treatment liquid supply apparatus of the second embodiment, the amount of particles in the treatment liquid flowing toward the liquid discharge pipe can be measured in the primary-side supply pipe. Therefore, it can be confirmed whether or not the amount of particles has decreased in the liquid discharge treatment.
According to the treatment liquid supply device of the third embodiment, the control unit automatically controls the opening and closing of the supply valve and the drain valve based on the measured particle amount to perform the drain treatment, so that the burden on the operator can be reduced.
According to the treatment liquid supply device of the fourth embodiment, the operator can appropriately recognize the maintenance/replacement timing of the parts by notifying the outside in accordance with the amount of particles measured in the liquid discharge treatment.
According to the treatment liquid supply apparatus of the fifth embodiment, liquid is discharged on the primary side of the plurality of filters, and thus it is possible to reduce the passage of high-concentration particles through each filter. Therefore, the life of each filter can be prolonged, and the diffusion of particles to the secondary side of each filter can be reduced.
According to the substrate processing apparatus of the sixth embodiment, the processing liquid can be discharged until the amount of particles in the processing liquid passing through the dissolution module decreases. This can reduce the amount of particles in the processing liquid passing through the dissolution module. Further, by stopping the supply of the treatment liquid to the filter and allowing the primary-side supply pipe to communicate with the drain pipe, the treatment liquid containing particles in the primary-side supply pipe can be discharged without passing through the filter. This makes it possible to extend the life of the filter. In addition, the processing liquid containing the particles is supplied to the processing portion together with the reducible particles.
According to the treatment liquid supply method of the seventh embodiment, the treatment liquid can be discharged until the amount of particles in the treatment liquid passing through the dissolution module decreases. This can reduce the amount of particles in the processing liquid passing through the dissolution module. Further, by stopping the supply of the treatment liquid to the filter and allowing the primary-side supply pipe to communicate with the drain pipe, the treatment liquid containing particles in the primary-side supply pipe can be discharged without passing through the filter. This reduces the passage of the treatment liquid containing particles through the filter, and therefore the life of the filter can be prolonged. In addition, the diffusion of the treatment liquid containing particles toward the secondary side of the filter can be reduced.
Drawings
Fig. 1 is a diagram schematically showing a substrate processing apparatus 1 according to an embodiment.
Fig. 2 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1.
Fig. 3 is a flowchart for explaining the operation of the processing liquid supply unit 3 in the liquid discharge processing.
Fig. 4 is a timing chart for explaining the control content of the liquid discharge treatment by the control unit 52.
Detailed Description
Embodiments of the present invention will be described below with reference to the accompanying drawings. The constituent elements described in the above embodiments are merely examples, and the scope of the present invention is not limited to these constituent elements. In the drawings, the size and number of each part are exaggerated or simplified as necessary for easy understanding.
< 1. embodiment >
Fig. 1 is a diagram schematically showing a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 processes a semiconductor wafer W (hereinafter, simply referred to as "wafer W"), which is an example of a substrate. The substrate processing apparatus 1 includes a plurality of processing units 2 (processing sections), and a processing liquid supply unit 3 (processing liquid supply device) that supplies a processing liquid to each of the processing units 2. Here, the processing liquid is supplied from one processing liquid supply unit 3 to the four processing units 2, but a dedicated processing liquid supply unit may be provided for each processing unit.
The processing unit 2 is a sheet-by-sheet type device that processes the wafers W one by one with the processing liquid. The process unit 2 includes a spin chuck 4 for holding and rotating the wafer W horizontally, and a nozzle 5 for supplying a process liquid as a process liquid to the wafer W.
The spin chuck 4 includes a spin base 8 that holds the wafer W substantially horizontally and is rotatable about a vertical axis, and a rotation driving mechanism 9 that rotates the spin base 8 about the vertical axis. The nozzle 5 may be a fixed nozzle in which the position of the liquid applying position of the processing liquid on the wafer W is fixed, or may be a movable nozzle (scanning nozzle) in which the liquid applying position moves in a range from the rotation center of the wafer W to the edge of the wafer W. The processing liquid is supplied from the processing liquid supply unit 3 into the nozzle 5.
The processing liquid supply unit 3 includes: the dissolution module 30, the filters 31a to 31d, the primary-side supply pipe 32, the supply valve 33, the secondary-side supply pipes 34a to 34d, the pump 35, the air supply valve 36, the drain pipe 41, the drain valve 42, the particle measurement unit 51, the control unit 52, and the discharge valves 53a to 53 d.
The dissolving module 30 generates carbon dioxide (CO)2) And a carbonated water mixed with deionized water (DIW) as a stock solution of the treatment liquid. Supplying pure water from a pure water source to dissolutionIn the module 30, and carbon dioxide is supplied from a carbon dioxide source (a gas cylinder or the like) to the dissolving module 30. The supply of the deionized water is performed by a pump 35 provided in a pipe connecting the deionized water source to the dissolution module 30. The supply of carbon dioxide is controlled by an air supply valve 36 inserted into a pipe connecting the dissolution module 30 and a carbon dioxide source. The dissolving module 30 includes, for example, a hollow fiber membrane, and carbon dioxide is dissolved in pure water by supplying carbon dioxide to the pure water through the hollow fiber membrane. In the processing unit 2, the wafers W are treated (rinsing) with a treatment liquid (carbonated water) in which carbon dioxide is dissolved in pure water, thereby reducing the electrification of the wafers W.
The filters 31a to 31d filter the treatment liquid supplied to each treatment unit 2. The filters 31a to 31d each include, for example, numerous pores, and filter the treatment liquid supplied to the treatment unit 2 to remove particles from the treatment liquid.
The primary-side supply pipe 32 forms a flow path for the treatment liquid. One end of the primary-side supply pipe 32 is connected to the dissolution module 30. The other end side of the primary-side supply pipe 32 is branched into a plurality of branch pipes 320a to 320D at a branching portion D1. The branch pipes 320a to 320d are connected to the filters 31a to 31d, respectively.
The supply valve 33 is inserted into the primary-side supply pipe 32. More specifically, the supply valve 33 is provided between the dissolution module 30 and the branching portion D1. The supply valve 33 opens and closes a flow path formed by the primary-side supply pipe 32, thereby controlling the opening and closing of the supply of the treatment liquid from the dissolution module 30 to the filters 31a to 31 d.
One end of the secondary-side supply pipe 34a is connected to the filter 31a, and the other end is connected to one nozzle 5 of the plurality of processing units 2. The other secondary-side supply pipes 34b to 34d are also connected to one of the filters 31b to 31d at one end and to one nozzle 5 of the plurality of processing units 2 at the other end. The secondary-side supply pipes 34a to 34d supply the treatment liquid filtered by the filters 31a to 31d connected thereto to the nozzles 5 of the treatment unit 2.
The discharge valves 53a to 53d are respectively inserted into the secondary-side supply pipe 34a to the secondary-side supply pipe 34 d. The discharge valves 53a to 53d open and close the flow paths of the treatment liquid formed in the secondary-side supply pipes 34a to 34d, thereby controlling the opening and closing of the discharge of the treatment liquid from each nozzle 5. The discharge valves 53a to 53d may be configured to be adjustable in opening degree of the flow paths of the secondary-side supply pipes 34a to 34 d. By adjusting the opening, the discharge amount of the treatment liquid per unit time from each nozzle 5 can be controlled.
The liquid discharge pipe 41 branches from a branch portion D2 on the primary side of the supply valve 33 of the primary-side supply pipe 32, and is connected to the liquid discharge tank 90. The drain tank 90 is provided to accumulate the processing liquid discharged from the processing liquid supply unit 3. The processing liquid stored in the liquid discharge tank 90 is discharged to the outside of the substrate processing apparatus 1 through the discharge pipe 92.
The drain valve 42 is inserted into the drain pipe 41. The drain valve 42 opens and closes a flow path formed by the drain pipe 41, thereby controlling opening and closing of the discharge of the treatment liquid from the primary-side supply pipe 32 to the drain tank 90.
The supply valve 33 and the drain valve 42 are examples of a switching unit provided in the primary-side supply pipe 32 and configured to switch between a state in which the dissolution module 30 communicates with the filters 31a to 31d and a state in which the dissolution module 30 communicates with the drain tank 90 (drain unit).
The particle measurement unit 51 measures the amount of particles in the processing liquid passing through the primary-side supply pipe 32. The particle measurement unit 51 is, for example, a measurement instrument (particle counter) that counts particles (dust, fine particles, impurities, and the like) present in the processing liquid. The particle measuring section 51 measures, for example, the intensity of scattering of light from the particles, and measures the amount of the particles by taking out the light intensity proportional to the size of the particles as an electric signal.
The particle measurement unit 51 measures the amount of particles in the processing liquid passing through the pipe portion 322 from the dissolution module 30 to the branch portion D2 in the primary-side supply pipe 32. Here, the particle measurement section 51 has a sampling pipe 510 that bypasses the pipe section 322. The sampling pipe 510 is made smaller in diameter than the primary-side supply pipe 32. The particle measuring section 51 measures the amount of particles passing through the sampling pipe 510, thereby measuring the amount of particles in the processing liquid passing through the pipe section 322.
Fig. 2 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1. The control unit 52 includes a microcomputer and controls a control target included in the substrate processing apparatus 1 according to a predetermined control program. In particular, the control unit 52 controls the pump 35, the air supply valve 36, the supply valve 33, the drain valve 42, and the discharge valves 53a to 53 d. The control unit 52 is connected to the particle measurement unit 51. The control unit 52 does not necessarily control the pump 35 and the air supply valve 36. For example, the pump 35 may be driven at all times when the treatment liquid supply unit 3 is activated, thereby always pumping pure water from the pure water source.
The control unit 52 is connected to the storage unit 94. A program library (recipe)940 is stored in the storage unit 94. The library 940 stores conditions for processing to be performed on the wafer W in the processing unit 2 in a predetermined data format. Specifically, a processing program, processing contents (processing time, temperature, pressure, or supply amount), and the like are described. The control unit 52 can access the storage unit 94 to read out the library 940 as appropriate.
The control unit 52 determines whether to stop or supply the processing liquid to the filters 31a to 31d based on the amount of particles in the processing liquid passing through the primary-side supply pipe 32 measured by the particle measurement unit 51. Specifically, when the amount of particles exceeds a predetermined discharge reference value, the controller 52 controls the opening and closing of the supply valve 33 and the discharge valve 42 to perform a discharge process for discharging the processing liquid in the dissolution module 30 and the primary-side supply pipe 32. When the liquid discharge processing is performed, the control unit 52 closes the supply valve 33 and opens the liquid discharge valve 42. In this state, the treatment liquid that has been transferred to the dissolution module 30 by the pump 35 flows into the liquid discharge pipe 41 after passing through the dissolution module 30 and the primary-side supply pipe 32, and is then discharged. Thereby, the particles accumulated in the dissolution module 30, the primary-side supply pipe 32, and the like are appropriately washed away by the treatment liquid.
During the liquid discharge treatment, the air supply valve 36 is closed, and only the pure water containing no carbon dioxide passes through the dissolution module 30 and the primary-side supply pipe 32. In this case, the interiors of the dissolving module 30 and the primary-side supply pipe 32 are mainly purified by pure water. However, the treatment liquid containing carbon dioxide may be passed through the primary-side supply pipe 32 by supplying carbon dioxide to the dissolution module 30 during the liquid discharge treatment.
< description of operation of the processing liquid supply means 3 >
When the processing liquid is supplied to each processing unit 2, the control unit 52 drives the pump 35 and opens the air supply valve 36. Thereby, the treatment liquid (carbonated water) is generated in the dissolution module 30. Then, the controller 52 opens the supply valve 33 and closes the drain valve 42, and supplies the treatment liquid generated in the dissolution module 30 to the filters 31a to 31d via the primary-side supply pipe 32 (supply step). Then, the processing liquid passes through each of the filters 31a to 31d, thereby filtering the processing liquid (filtering step). When the processing liquid from which particles have been removed by the filtration is transferred to each processing unit 2, the processing liquid is supplied from the nozzle 5 of each processing unit 2 onto the wafer W to process the wafer W.
Fig. 3 is a flowchart for explaining the operation of the processing liquid supply unit 3 in the liquid discharge processing. Fig. 4 is a timing chart for explaining the control content of the liquid discharge treatment by the control unit 52.
As shown in fig. 3, the operation of the liquid discharge processing in the processing liquid supply unit 3 includes step S1 in which the control unit 52 determines whether or not the liquid discharge processing is necessary based on a predetermined determination criterion. In step S1, the amount of particles is used as the determination criterion as described above.
Specifically, the particle measuring section 51 measures the amount of particles (particle amount measuring step). Then, the control unit 52, upon receiving the information of the amount of particles as the measurement result, determines whether or not the amount of particles exceeds a predetermined discharge liquid reference value. In the case where the excess is not exceeded (No in step S1), step S1 is executed again. In this case, the determination in step S1 is preferably performed for each cycle in which the particle measuring unit 51 measures the amount of particles. When the amount of particles exceeds the liquid discharge reference value (Yes in step S1), the control unit 52 executes the next step S2.
In step S2, control unit 52 changes supply valve 33 from the open state to the closed state. As shown in fig. 4, when the supply valve 33 is closed, the supply of the processing liquid to the filters 31a to 31d is stopped from the state in which the processing liquid is supplied.
When the supply valve 33 is closed, the control unit 52 changes the drain valve 42 from the closed state to the open state at a timing slightly later than or substantially the same as that (step S3 in fig. 3, see fig. 4). Thereby, the dissolution module 30, the primary-side supply pipe 32 (specifically, the pipe portion 322), and the drain pipe 41 are in a state of being communicated with the drain tank 90. At this time, as shown in fig. 4, the pump 35 is in an operating state. In addition, the air supply valve 36 is closed. Therefore, the raw liquid (deionized water) of the carbon dioxide-free treatment liquid flows from the dissolution module 30 into the liquid discharge pipe 41 through the primary-side supply pipe 32 and is discharged to the liquid discharge tank 90 (liquid discharge step). Further, as described above, the air supply valve 36 does not have to be closed in the drain step. That is, the treatment liquid containing carbon dioxide may be discharged.
As shown in fig. 4, in the liquid discharging step of the present embodiment, after the liquid discharging valve 42 is opened, while the supply valve 33 is kept closed, the circulation control is performed in which the liquid discharging valve 42 is closed for a predetermined time T1 a plurality of times (four times in this case) and then opened again for a predetermined time. By periodically closing the drain valve 42 in this manner, the flow of the treatment liquid in the dissolution module 30 and the primary-side supply pipe 32 can be intermittently stopped. Hereinafter, such a liquid discharge treatment is referred to as "rapid liquid discharge treatment". According to the rapid liquid discharge treatment, since the flow of the treatment liquid can be made gentle and rapid, particles adhering to the inside of the dissolution module 30 and the primary-side supply pipe 32 are likely to fall off, and thus improvement in the removal efficiency of the particles can be expected.
In the quick liquid discharge process, when the liquid discharge valve 42 is controlled to open and close, the control unit 52 may control the driving of the pump 35 to open and close as shown by a broken line in fig. 4. That is, the pump 35 may be stopped at the timing of closing the drain valve 42, and the pump 35 may be driven at the timing of opening the drain valve 42. This can suppress a pressure increase in the dissolving module 30 or the primary-side supply pipe 32 when the drain valve 42 is closed. Therefore, the burden imposed on the dissolving module 30 or the pump 35 can be reduced.
Further, during the liquid discharging step, the liquid discharging valve 42 may be opened all the time to control the driving of the pump 35. In this case, a quick liquid discharge treatment can also be performed. In addition, it is not necessary to perform a rapid liquid discharge treatment. That is, in the drain step, the pump 35 may be driven at all times, and the drain valve 42 may be opened at all times.
In the liquid discharge step, when the control unit 52 determines that the specific condition is satisfied, the liquid discharge process may be performed quickly. The "specific condition" refers to, for example, when the amount of particles measured by the particle measuring unit 51 is an abnormal value exceeding a predetermined threshold.
In step S3, after the drain valve 42 is opened, the control unit 52 determines whether or not the amount of particles measured by the particle measuring unit 51 has become equal to or less than a predetermined allowable value (step S4). When the particles inside the dissolving module 30 and the primary-side supply pipe 32 have been removed by the discharge of the treatment liquid, the amount of the particles is expected to be reduced. Therefore, in step S5, the amount of particles is monitored to determine whether or not to continue the liquid discharge.
When the amount of particles exceeds the predetermined allowable value (no in step S4), the process returns to step S3 to continue the discharge of the treatment liquid. On the other hand, when the amount of particles has become equal to or less than the predetermined allowable value by the discharge of the processing liquid (yes in step S4), the control unit 52 closes the drain valve 42 (step S5 in fig. 3, see fig. 4). The discharge of the processing liquid is stopped by closing the drain valve 42. In this way, the control unit 52 monitors the amount of particles and performs the liquid discharge treatment, thereby suppressing excessive liquid discharge treatment.
In step S4, the control unit 52 may output a notification to the outside through an output device (a display device, a printing device, a lamp, or the like) in accordance with the amount of particles measured by the particle measurement unit 51. For example, the reference value may be determined in advance with respect to the duration of the liquid discharge treatment (or the discharge amount of the treatment liquid). That is, in step S4, when the duration of the stool liquid discharge process (or the discharge amount of the processing liquid) exceeds the reference value and the amount of particles does not fall below the allowable value, the control unit 52 may output a notification to the outside through the output device. The operator can recognize the abnormality of the treatment liquid supply unit 3 by the notification, and can appropriately recognize the maintenance/replacement timing of the parts such as the dissolution module 30.
When the drain valve 42 is closed, the control unit 52 causes the supply valve 33 to be opened from the closed state at a timing slightly later than or substantially the same as the timing (step S6 in fig. 3, see fig. 4). Further, the supply valve 36 is opened to supply carbon dioxide to the dissolution module 30. As a result, the treatment liquid containing carbon dioxide flows through the primary-side supply pipe 32 again, and is supplied to each of the filters 31a to 31d (see fig. 4). That is, the processing liquid supply unit 3 can supply the processing liquid to the processing unit 2.
As described above, according to the substrate processing apparatus 1 of the present embodiment, the supply valve 33 is closed in the processing liquid supply unit 3 (step S2), and the drain valve 42 is opened (step S3). This can reduce the amount of particles in the processing liquid passing through the dissolution module 30. The treatment liquid can be discharged on the primary side (i.e., on the supply source side of the treatment liquid) of the filters 31a to 31 d. Therefore, particles generated in the dissolving module 30, the primary-side supply pipe 32, or other dust sources are discharged to the outside without passing through the filters 31a to 31 d. In this case, it is possible to reduce the passage of the treatment liquid, which contains many particles generated on the primary sides of the filters 31a to 31d, through the filters 31a to 31 d. This makes it possible to extend the life of the filters 31a to 31 d.
Further, since the treatment liquid containing many particles can be discharged to the primary sides of the filters 31a to 31d, the risk of the treatment liquid containing the particles diffusing to the secondary sides of the filters 31a to 31d can be reduced.
In addition, when the liquid discharge process is performed based on the amount of particles measured by the particle measuring unit 51, the process liquid containing high-concentration particles can be appropriately prevented from passing through the filters 31a to 31 d. In addition, the processing liquid containing many particles can be suppressed from being used for processing the wafer W. In addition, excessive liquid discharge treatment can be suppressed.
< 2. modification example >
The embodiments have been described above, but the present invention is not limited to the above-described embodiments, and various modifications are possible.
For example, the amount of particles measured by the particle measurement unit 51 may be set in advance as a maintenance reference value that is a standard for maintenance and replacement of parts such as the dissolution module 30. Specifically, when the amount of particles exceeds a predetermined maintenance reference value, the control unit 52 may output a notification to the outside through an output device (a display device, a printing device, a lamp, or the like). By notifying the outside, the operator can appropriately recognize the maintenance/replacement timing of the parts such as the dissolution module 30.
Further, as in the above-described embodiment, the supply valve 33 and the drain valve 42 may be configured to be electrically openable and closable under the control of the control unit 52, but may be configured to be manually openable and closable at least one. However, the burden on the operator can be reduced by automatically performing the opening and closing control.
Instead of inserting the supply valve 33 and the drain valve 42 as switching units into the primary-side supply pipe 32, a three-way valve having both functions of the supply valve 33 and the drain valve 42 may be used. In this case, a three-way valve is preferably provided in the branch portion D2 connected to the liquid discharge pipe 41 in the primary-side supply pipe 32.
The treatment liquid supplied by the treatment liquid supply unit 3 is not limited to one in which carbon dioxide is dissolved, and may be one in which other types of gases such as nitrogen are dissolved. In addition, a treatment liquid may be obtained by mixing a liquid such as a chemical liquid with carbonated water or a liquid in which other kinds of gas such as nitrogen gas are dissolved.
The substrate processing apparatus 1 according to the embodiment is a wafer-by-wafer apparatus that processes wafers W one by one with a processing liquid in a processing unit 2. However, the present invention is also applicable to a substrate processing apparatus including a batch-type processing unit that simultaneously processes a plurality of wafers W with a processing liquid.
In the above-described embodiment, the wafer W is used as the substrate to be processed, but the present invention is not limited to the wafer W, and other types of substrates such as a glass substrate for a liquid crystal display device, a substrate for a plasma display device, a substrate for an FED, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, and a substrate for a solar cell may be used as the substrate to be processed.
Although the present invention has been described in detail, the description is illustrative in all aspects, and the present invention is not limited thereto. Innumerable modifications that are not illustrated are to be construed as conceivable without departing from the scope of the present invention. The configurations described in the embodiments and the modifications may be appropriately combined or omitted unless contradictory.
Description of the symbols
1: substrate processing apparatus
2: processing unit (processing unit)
3: treatment liquid supply unit (treatment liquid supply device)
30: dissolving module
31a to 31 d: filter
32: primary-side supply pipe
320a to 320 d: branch piping
33: supply valve
34a to 34 d: secondary side supply pipe
35: pump and method of operating the same
41: liquid discharge piping
42: drain valve
51: particle measurement section
52: control unit
90: liquid discharge groove (liquid discharge part)
92: discharge piping
D1, D2: branching part (connecting part)
W: wafer with a plurality of chips
Claims (7)
1. A processing liquid supply apparatus for supplying a processing liquid, comprising:
a dissolving module for dissolving the gas in the stock solution of the treatment solution;
a primary-side supply pipe having one end connected to the secondary side of the dissolving module;
a filter connected to the other end of the primary-side supply pipe and configured to filter the treatment liquid;
a secondary-side supply pipe connected to the secondary side of the filter and forming a flow path through which the treatment liquid having passed through the filter passes;
a liquid discharge pipe connected to the primary side supply pipe and configured to supply the treatment liquid to a liquid discharge portion;
a switching unit provided in the primary-side supply pipe and configured to switch between a state in which the dissolution module is in communication with the filter and a state in which the dissolution module is in communication with the liquid discharge unit;
a particle measuring unit provided on the primary side of the switching unit and measuring the amount of particles in the processing liquid passing through the primary-side supply pipe; and
and a control unit for controlling the switching operation by the switching unit in accordance with the amount of the particles measured by the particle measuring unit.
2. The treatment liquid supply apparatus according to claim 1, wherein
The particle measuring section measures the amount of particles in the processing liquid passing through the primary-side supply pipe on the primary side of the portion to which the liquid discharge pipe is connected.
3. The treatment liquid supply apparatus according to claim 1 or 2, wherein
The switching unit includes:
a supply valve inserted into the primary-side supply pipe to open and close a flow path in the primary-side supply pipe; and
a drain valve inserted in the drain pipe to open and close a flow path in the drain pipe; and is
The control unit controls opening and closing operations of the supply valve and the drain valve.
4. The treatment liquid supply apparatus according to claim 3, wherein
The control unit outputs a notification to the outside through an output device in accordance with the amount of particles measured by the particle measuring unit in a state where the supply valve is closed and the drain valve is opened.
5. The treatment liquid supply device according to claim 3 or 4, wherein
The primary-side supply pipe is branched into a plurality of branch pipes at the secondary side of the switching unit, and one filter is connected to each of the plurality of branch pipes.
6. A substrate processing apparatus for processing a substrate, comprising:
the treatment liquid supply device according to any one of claims 1 to 5; and
and a processing unit configured to process a substrate with the processing liquid filtered by the filter of the processing liquid supply device.
7. A process liquid supply method for supplying a process liquid, comprising:
(a) dissolving a gas in a raw solution of a treatment solution by a dissolving module;
(b) supplying the treatment liquid in which the gas is dissolved from the dissolving module to a primary-side supply pipe;
(c) filtering the treatment liquid that has passed through the primary-side supply pipe by a filter connected to the primary-side supply pipe;
(d) measuring an amount of particles in the treatment liquid passing through the primary-side supply pipe; and
(e) and (c) stopping the supply of the treatment liquid to the filter in the step (c) in accordance with the amount of the particles measured in the step (d), and feeding the treatment liquid having passed through the dissolution module to a liquid discharge unit via a liquid discharge pipe branched from the primary side supply pipe.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-055666 | 2018-03-23 | ||
| JP2018055666A JP7023763B2 (en) | 2018-03-23 | 2018-03-23 | Processing liquid supply equipment, substrate processing equipment and processing liquid supply method |
| PCT/JP2019/006267 WO2019181339A1 (en) | 2018-03-23 | 2019-02-20 | Processing liquid supply device, substrate processing device, and processing liquid supply method |
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| Publication Number | Publication Date |
|---|---|
| CN111788660A true CN111788660A (en) | 2020-10-16 |
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| CN201980015466.XA Pending CN111788660A (en) | 2018-03-23 | 2019-02-20 | Processing liquid supply device, substrate processing device, and processing liquid supply method |
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| Country | Link |
|---|---|
| JP (1) | JP7023763B2 (en) |
| KR (1) | KR102404042B1 (en) |
| CN (1) | CN111788660A (en) |
| TW (1) | TWI697976B (en) |
| WO (1) | WO2019181339A1 (en) |
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| KR102490845B1 (en) * | 2018-06-15 | 2023-01-25 | 엘지전자 주식회사 | Steam generating apparatus and cooking device having the same |
| JP7309297B2 (en) * | 2021-03-03 | 2023-07-18 | 株式会社Ｓｃｒｅｅｎホールディングス | Liquid supply device, coating device, aging device, liquid supply method, and aging method |
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| US20130220478A1 (en) * | 2012-02-24 | 2013-08-29 | Tokyo Electron Limited | Process liquid changing method and substrate processing apparatus |
| CN103426795A (en) * | 2012-05-15 | 2013-12-04 | 大日本网屏制造株式会社 | Method of preparing a chemical liquid for substrate processing, chemical liquid preparation unit, and substrate processing system |
| CN103706523A (en) * | 2012-10-09 | 2014-04-09 | 东京毅力科创株式会社 | Processing liquid supply method, processing liquid supply apparatus and storage medium |
| JP2016189493A (en) * | 2016-08-09 | 2016-11-04 | 東京エレクトロン株式会社 | Liquid processing method, liquid processing device, storage medium |
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| JPS61268391A (en) * | 1985-05-24 | 1986-11-27 | Hitachi Ltd | Apparatus for making pure water |
| JPH10177940A (en) * | 1996-12-17 | 1998-06-30 | Sony Corp | Chemicals feeder |
| JP2006351709A (en) | 2005-06-14 | 2006-12-28 | Dainippon Screen Mfg Co Ltd | Processing liquid feeder |
| JP5977058B2 (en) * | 2012-03-28 | 2016-08-24 | 株式会社Ｓｃｒｅｅｎホールディングス | Treatment liquid supply apparatus and treatment liquid supply method |
| JP6290016B2 (en) * | 2014-06-27 | 2018-03-07 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium |
| JP6453724B2 (en) * | 2014-08-26 | 2019-01-16 | 東京エレクトロン株式会社 | Substrate liquid processing method and substrate liquid processing apparatus |
| JP6407764B2 (en) | 2015-02-26 | 2018-10-17 | 東京エレクトロン株式会社 | Substrate processing system, control method for substrate processing system, and storage medium |
| JP6716992B2 (en) * | 2016-03-25 | 2020-07-01 | 栗田工業株式会社 | Wet cleaning device and wet cleaning method |
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2018
- 2018-03-23 JP JP2018055666A patent/JP7023763B2/en active Active
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2019
- 2019-02-20 WO PCT/JP2019/006267 patent/WO2019181339A1/en active Application Filing
- 2019-02-20 CN CN201980015466.XA patent/CN111788660A/en active Pending
- 2019-02-20 KR KR1020207023419A patent/KR102404042B1/en active IP Right Grant
- 2019-03-18 TW TW108109177A patent/TWI697976B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130220478A1 (en) * | 2012-02-24 | 2013-08-29 | Tokyo Electron Limited | Process liquid changing method and substrate processing apparatus |
| CN103426795A (en) * | 2012-05-15 | 2013-12-04 | 大日本网屏制造株式会社 | Method of preparing a chemical liquid for substrate processing, chemical liquid preparation unit, and substrate processing system |
| CN103706523A (en) * | 2012-10-09 | 2014-04-09 | 东京毅力科创株式会社 | Processing liquid supply method, processing liquid supply apparatus and storage medium |
| JP2016189493A (en) * | 2016-08-09 | 2016-11-04 | 東京エレクトロン株式会社 | Liquid processing method, liquid processing device, storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201941339A (en) | 2019-10-16 |
| JP7023763B2 (en) | 2022-02-22 |
| TWI697976B (en) | 2020-07-01 |
| JP2019169586A (en) | 2019-10-03 |
| KR102404042B1 (en) | 2022-05-30 |
| WO2019181339A1 (en) | 2019-09-26 |
| KR20200103113A (en) | 2020-09-01 |
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