TWI696650B - 成膜方法、成膜裝置、元件結構體之製造方法及元件結構體之製造裝置 - Google Patents

成膜方法、成膜裝置、元件結構體之製造方法及元件結構體之製造裝置 Download PDF

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Publication number
TWI696650B
TWI696650B TW107105823A TW107105823A TWI696650B TW I696650 B TWI696650 B TW I696650B TW 107105823 A TW107105823 A TW 107105823A TW 107105823 A TW107105823 A TW 107105823A TW I696650 B TWI696650 B TW I696650B
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Taiwan
Prior art keywords
resin material
film
layer
resin
substrate
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TW107105823A
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English (en)
Chinese (zh)
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TW201835173A (zh
Inventor
清健介
青代信
高橋明久
矢島貴浩
加藤裕子
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日商愛發科股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5873Removal of material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • H05B33/04Sealing arrangements, e.g. against humidity
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
TW107105823A 2017-02-21 2018-02-21 成膜方法、成膜裝置、元件結構體之製造方法及元件結構體之製造裝置 TWI696650B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-030318 2017-02-21
JP2017030318 2017-02-21

Publications (2)

Publication Number Publication Date
TW201835173A TW201835173A (zh) 2018-10-01
TWI696650B true TWI696650B (zh) 2020-06-21

Family

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TW107105823A TWI696650B (zh) 2017-02-21 2018-02-21 成膜方法、成膜裝置、元件結構體之製造方法及元件結構體之製造裝置

Country Status (5)

Country Link
JP (1) JP6653408B2 (ja)
KR (1) KR102234630B1 (ja)
CN (1) CN110268091B (ja)
TW (1) TWI696650B (ja)
WO (1) WO2018155415A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7556128B2 (ja) * 2020-07-27 2024-09-25 江蘇菲沃泰納米科技股▲フン▼有限公司 原料気化装置、コーティング装置、コーティング機器及びその材料投入方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI357775B (en) * 2004-02-23 2012-02-01 Global Oled Technology Llc Vaporizing temperature sensitive materials for ole
TWI391994B (zh) * 2005-10-06 2013-04-01 Tokyo Electron Ltd 汽化器及半導體處理系統
TW201316588A (zh) * 2011-06-29 2013-04-16 Tokyo Electron Ltd 材料供給裝置及成膜裝置
TWI434364B (zh) * 2008-01-18 2014-04-11 Tokyo Electron Ltd 包含氣化器之半導體處理系統與使用此系統之方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000200781A (ja) * 1999-01-07 2000-07-18 Ebara Corp 液体原料気化装置及び方法
JP2002173778A (ja) 2000-12-04 2002-06-21 Japan Pionics Co Ltd 気化器
JP2003213422A (ja) 2002-01-24 2003-07-30 Nec Corp 薄膜の形成装置及びその形成方法
US7968437B2 (en) * 2005-11-18 2011-06-28 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing apparatus
JP4324619B2 (ja) 2007-03-29 2009-09-02 東京エレクトロン株式会社 気化装置、成膜装置及び気化方法
JP5573666B2 (ja) * 2010-12-28 2014-08-20 東京エレクトロン株式会社 原料供給装置及び成膜装置
JP2013073880A (ja) 2011-09-29 2013-04-22 Ulvac Japan Ltd 発光素子の製造方法
WO2014196137A1 (ja) * 2013-06-07 2014-12-11 株式会社アルバック 素子構造体及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI357775B (en) * 2004-02-23 2012-02-01 Global Oled Technology Llc Vaporizing temperature sensitive materials for ole
TWI391994B (zh) * 2005-10-06 2013-04-01 Tokyo Electron Ltd 汽化器及半導體處理系統
TWI434364B (zh) * 2008-01-18 2014-04-11 Tokyo Electron Ltd 包含氣化器之半導體處理系統與使用此系統之方法
TW201316588A (zh) * 2011-06-29 2013-04-16 Tokyo Electron Ltd 材料供給裝置及成膜裝置

Also Published As

Publication number Publication date
WO2018155415A1 (ja) 2018-08-30
JPWO2018155415A1 (ja) 2019-11-07
CN110268091B (zh) 2021-10-12
KR102234630B1 (ko) 2021-04-01
JP6653408B2 (ja) 2020-02-26
KR20190077534A (ko) 2019-07-03
CN110268091A (zh) 2019-09-20
TW201835173A (zh) 2018-10-01

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