TWI696650B - Film formation method, film formation apparatus, method of manufacturing element structure, and element structure manufacturing apparatus - Google Patents

Abstract

The present invention provides a film formation method of spraying a liquid resin material into a heater causing the liquid resin material to vaporize, supplying the vapor to a substrate to form a resin material film. In the film formation method, conditions for film formation are controlled so as to compensate a vaporization rate of the resin material decreasing in accordance with vaporization integrated quantity representing a total amount of supplying the resin material to the heater.

Description

Film forming method, film forming device, method for manufacturing element structure, and device for manufacturing element structure

The present invention relates to a film forming method, a film forming apparatus, a method for manufacturing a device structure, and a device for manufacturing a device structure, and particularly relates to a device for manufacturing a layered structure having a protective device to protect from oxygen, moisture, etc. Better technology for structure.

As an element containing a compound having a property that is easily deteriorated by moisture, oxygen, or the like, for example, an organic EL (Electro Luminescence) element is known. With regard to such devices, attempts have been made to suppress the intrusion of moisture or the like into the device by forming a laminated structure formed of a layer containing a compound and a protective layer covering the layer. For example, Japanese Patent Laid-Open No. 2013-73880 describes a light-emitting element having a protective film composed of a laminated film of an inorganic film and an organic film on the upper electrode layer. As the organic film, acrylic resin or the like can be used. As a film forming method of an organic film, a method is being studied, which is to supply a resin material in a vaporized form, and liquefy the resin material on a substrate, and to irradiate the resin material with UV (ultraviolet, ultraviolet) light to make the resin material Polymerize to form a resin film. However, when the resin material is vaporized, there is a case where the resin material is not completely evaporated in the vaporizer but the resin material liquid remains in the heating part, or the resin material is solidified by heating. Therefore, there is a problem that the gasification efficiency deteriorates over time, and even if the supply amount of the resin material supplied to the gasifier is fixed, the supply amount of steam supplied from the gasifier to the film forming chamber is still gradually reduced, thereby accumulating The rate (film formation rate) gradually deteriorates. In particular, there is a problem that if the processing time becomes longer, the film formation state becomes unstable due to the reduction of the vaporization efficiency. In addition, there is a possibility that sufficient film formation cannot be performed because sufficient resin material vapor is not supplied to the film forming apparatus. In this case, there is a problem that, when irregularities are formed on the surface of the substrate having the device layer, the irregularities cannot be sufficiently covered, for example, there is a possibility of poor coating at the boundary portion of the irregularities. Once such poor coating of the inorganic film occurs, it is impossible to prevent moisture from invading from the portion where the poor coating has occurred, so it is difficult to ensure sufficient barrier properties.

The present invention has been completed in view of the above circumstances, and it is intended to achieve at least one of the following objectives. 1. To improve the supply state of resin material vapor. 2. To prevent film formation defects caused by a decrease in the supply amount. 3. To stabilize the film formation rate. 4. To ensure the barrier. The film-forming method of the first aspect of the present invention is to spray liquid resin material into a heating portion in a mist state to vaporize it, and supply the vaporized vapor to a substrate to form a resin material film; and The film forming conditions are controlled so as to compensate for the vaporization rate of the resin material that decreases corresponding to the total amount of the resin material supplied to the heating portion, that is, the cumulative amount of vaporization. In the film-forming method of the first aspect of the present invention, the film-forming conditions may include the film-forming time of forming the resin material film for each of the substrates, or spraying the liquid in the form of a mist to the heating section At least one of the supply amount of the resin material per unit time. In the film formation method according to the first aspect of the present invention, the heating portion may have an inclined surface. In the film-forming method of the first aspect of the present invention, the above-mentioned resin material may be a material of ultraviolet-curable acrylic resin. The film-forming device of the second aspect of the present invention is to spray the liquid resin material into the heating portion in the form of a mist to vaporize it, and supply the vaporized vapor to the substrate to form a film of the resin material; and It includes: a recording unit which records the gasification operation data including the cumulative amount of the resin material supplied to the heating unit; and a control unit which refers to the above gasification operation data to determine the time to extend the film formation time or to correct the above The heating part sprays out at least any one of the increase in the amount of increase in the supply amount per unit time of the liquid resin material in the form of mist. The manufacturing method of the device structure of the third aspect of the present invention includes: a first step (step A), which forms a first layer, the first layer covering the functional layer disposed on one side of the substrate, and has partial convexity Part, containing inorganic materials; the second step (step B) is to supply the liquid resin material in a vaporized form by covering the first layer covering one surface side (a main surface side) of the substrate Forming a resin material film containing the above-mentioned resin material; the third step (step C), which is to observe the first layer from a side cross-section so that A part of the resin material film remains, and the resin material film at a position different from the position where the resin material film remains is removed; and Step 4 (Step D), which covers a part of the remaining resin material film And forming a second layer containing an inorganic material by removing the resin material film to expose the first layer; and in the second step, to compensate for the continued vaporization of the resin material corresponding to the vaporization The manner of reducing the above-mentioned resin material over time controls the supply state. In the manufacturing method of the element structure of the third aspect of the present invention, in the second step, the supply amount of the resin material corresponding to the supply time of the vaporized resin material may be extended The film forming time of the above resin material film. In the manufacturing method of the element structure of the third aspect of the present invention, in the film forming process of the resin material film in the second step, the vaporized resin material may be supplied to the film forming chamber Inside, and during the non-film forming process of the resin material film, the vaporized resin material is sent to the outside of the film forming chamber; and the supply amount of the resin material is obtained as the vaporization amount of the resin material. The accumulated amount obtained controls the film forming time of the resin material film based on the accumulated amount. In the method for manufacturing a device structure of a third aspect of the present invention, the third step may be to observe the first layer from a side cross-section, such that the area including the top portion of the outer surface of the convex portion is exposed The above resin material film is removed. In the method of manufacturing the element structure of the third aspect of the present invention, the dry etching method may be used as the method of removing the resin material film for the third step. It is also possible to detect the change of a specific condition among the conditions for etching the resin material film for the third step, and use the detected detection result as the end point of the etching process. A manufacturing device of an element structure according to a fourth aspect of the present invention includes: a first layer forming portion that forms a first layer that covers a functional layer disposed on one side of the substrate and has local convex portions, Contains inorganic materials; resin film-forming section that can supply the vaporized resin material from a vaporizer that vaporizes the liquid resin material by heating to form a resin that covers the first layer and includes the resin material Material film; a localization treatment part, which observes the first layer from a side cross section, leaving a part of the resin material film at a position including a boundary portion between the outer side of the convex part and a surface of the substrate, and Removing the resin material film at a position different from the position where the resin material film remains; and a second layer forming portion that covers the convex portion located on one surface side of the substrate and a part of the remaining resin material film, And forming a second layer containing an inorganic material by the first layer exposed by the removal; and including: a supply pipe connected to a gasification tank provided in the gasifier to vaporize the film during film formation The above-mentioned resin material is supplied to the above-mentioned resin film-forming part; an external tube connected to the above-mentioned gasification tank and sending out the gasified above-mentioned resin material to the outside of the above-mentioned resin film-forming part during the non-film forming process; and a switching valve, It switches the supply tube and the external tube; and has a control unit that controls the supply time of the resin material to the resin film-forming unit in a manner to compensate for the resin material that decreases in accordance with the duration of vaporization . According to the film-forming method of the first aspect of the present invention, the resin material that is reduced corresponding to the gasification duration of the gasified resin material can be compensated, and the resin material can be supplied regardless of the passage of the film-forming time Compensation is carried out in a stable amount, so that the film formation rate which is reduced in accordance with the cumulative amount of vaporization is fixed, so that the film formation characteristics such as the uniformity of the film thickness can be brought into a desired state. In the film forming method according to the first aspect of the present invention, the film forming conditions include the film forming time for forming the resin material film for each of the substrates, or each time the liquid resin material is sprayed into the heating portion in the form of a mist At least one of the supply quantity per unit time. Therefore, by prolonging the film-forming time or gradually increasing the supply amount per unit time of the liquid resin material sprayed into the heating portion in the form of a mist, the film-forming rate can be made uniform. In the film forming method according to the first aspect of the present invention, the heating portion has an inclined surface, whereby the rate at which the supply amount of the resin material decreases in accordance with the cumulative amount of vaporization can be reduced. In the film forming method according to the first aspect of the present invention, the resin material may be a material of ultraviolet curable acrylic resin. According to a second aspect of the present invention, the film forming apparatus may include: a recording unit that records gasification operation data including the cumulative amount of resin material supplied to the heating unit; and a control unit that refers to the gasification operation data, It is determined at least either one of the time to prolong the film formation time or the increase in the amount of supply per unit time to the above-mentioned heating section to spray the liquid resin material in the form of mist. According to the manufacturing method of the element structure of the third aspect of the present invention, in the second step, the supply state is controlled in such a manner as to compensate for the resin material that decreases corresponding to the gasification duration of the gasified resin material, This enables the supply amount of the resin material to be stable regardless of the film formation time, and even in the case of sequentially forming a plurality of substrates, the supply amount of the resin material can be made regardless of the film formation order and film formation It is stable over time to prevent fluctuations in the film formation rate. In addition, the film formation rate can be stabilized to form a resin material film having desired film characteristics, and thereby the localized resin material film (resin material) can be utilized to reliably include the first layer and the second layer. The functional layer is sealed so that an element structure with high barrier characteristics can be manufactured. In the method for manufacturing an element structure according to the third aspect of the present invention, in the second step, the resin material film is extended according to the supply amount of the resin material corresponding to the supply time of the vaporized resin material The film-forming time can thereby easily compensate for the above-mentioned resin material that decreases in accordance with the processing time, thereby stabilizing the film-forming rate and preventing variations in film characteristics. In the method for manufacturing an element structure according to the third aspect of the present invention, during the film forming process of the resin material film in the second step, the vaporized resin material is supplied, and during the non-film forming process, The vaporized resin material is sent outside the film-forming chamber. The cumulative amount obtained by accumulating the supply amount of the resin material as the vaporization amount of the resin material is obtained, and the film forming time of the resin material film is controlled based on the cumulative amount, thereby, when a plurality of film formations are performed, The film thickness can be controlled regardless of the film formation sequence and the elapse of film formation time. Furthermore, in the method for manufacturing a device structure of a third aspect of the present invention, the third step is to observe the first layer from a side cross-section, so that the area including the top portion of the outer surface of the convex portion is exposed The above resin material film is removed. In this way, the localized resin material film (resin material) can be easily used to reliably seal the functional layer including the first layer and the second layer, so that unnecessary damage to the first layer can be achieved. The unnecessary part of the resin material film (resin material) is removed, and only the part to be sealed is localized. With this, an element structure with high barrier characteristics can be manufactured. In the method of manufacturing the element structure of the third aspect of the present invention, the third step uses a dry etching method as the method of removing the resin material film, thereby the resin can be removed without causing unnecessary damage to the first layer The unnecessary part of the material film is removed, and only the part to be sealed is localized. In addition, in the third step above, the change of a specific condition among the conditions for etching the resin material film is detected and used as the end point of the etching process, whereby the resin material film can be reliably removed, and Can reduce unnecessary damage to the first layer. According to the manufacturing device of the element structure of the fourth aspect of the present invention, the supply amount of the resin material can be stabilized regardless of how the film forming time elapses, and even when film formation is performed on a plurality of substrates sequentially The supply amount of the resin material can be stabilized regardless of the film forming sequence and film forming time, thereby preventing the film forming rate from varying. In addition, the film formation rate can be stabilized to form a resin material film having desired film characteristics, and thereby the localized resin material film can be used to reliably seal the functional layer including the first layer and the second layer In this way, an element structure with high barrier characteristics can be manufactured. Effects of the Invention According to the aspect of the present invention, the following effects can be achieved: stabilization of the supply state of the resin material, prevention of film formation defects caused by fluctuations in the supply amount, stabilization of the film formation rate, and stable film formation Resin material film.

Hereinafter, a film forming method, a film forming apparatus, a method for manufacturing a device structure, and a device for manufacturing a device structure according to the first embodiment of the present invention will be described based on the drawings. FIG. 1 is a schematic diagram showing an apparatus (film forming apparatus) for manufacturing an element structure of this embodiment. FIG. 2 is a schematic diagram showing an apparatus for manufacturing an element structure of this embodiment. FIG. 3 is a flowchart showing a method of manufacturing the element structure of this embodiment. In FIG. 1, reference numeral 1000 is an apparatus for manufacturing the element structure. As described below, the device structure manufacturing apparatus 1000 of the present embodiment manufactures element structure bodies such as organic EL elements. As shown in FIG. 1, the manufacturing apparatus 1000 includes a first layer forming section 201, a resin film forming section 100, a localization processing section 202, a second layer forming section 203, and a functional layer forming section forming a functional layer that becomes an organic EL layer 204, the core chamber 200, and the load lock chamber 210 connected to the outside. The core chamber 200 is connected to the first layer forming part 201, the resin film forming part 100, the localization processing part 202, the second layer forming part 203, the functional layer forming part 204, and the load lock chamber 210. The interior of the load-locked vacuum chamber 210 is for inserting the substrate of the manufacturing apparatus 1000 that is transferred to the element structure from other devices or the like. In the core room 200, for example, a substrate transfer robot (not shown) is arranged. Thereby, each of the core chamber 200, the first layer forming portion 201, the resin film forming portion 100, the localization processing portion 202, the second layer forming portion 203, the functional layer forming portion 204, and the load lock chamber 210 Carry the substrate between. The substrate can be transported to the outside of the manufacturing apparatus 1000 of the element structure through the load lock chamber 210. The core chamber 200, the film-forming chambers 100, 201, 202, 203, 204, and the load-locking vacuum chamber 210 each constitute a vacuum chamber connected to a vacuum exhaust system (not shown). By manufacturing the element structure 10 using the manufacturing apparatus 1000 having the element structure as described above, each manufacturing step can be automated, and a plurality of film forming chambers can be used simultaneously to efficiently manufacture, thereby improving productivity. The first layer forming portion 201 forms a first layer 41 in the following element structure 10 that covers the functional layer 3 disposed on one side 2a of the substrate 2 and has local convex portions, including nitride Inorganic materials such as silicon (SiN _x ). The first layer forming portion 201 is a film forming chamber for forming the first layer 41 by, for example, CVD (Chemical Vapor Deposition) method, sputtering method, or ALD (Atomic Layer Deposition) method. . The functional layer forming portion 204 forms the functional layer 3 in the element structure 10 described below. Furthermore, the functional layer forming portion 204 may also be provided outside the load lock chamber 210. The second layer forming portion 203 forms a film forming chamber of the second layer 42 in the element structure 10 described below by covering the first layer 41 and the resin material 51, the second layer 42 is the same as the first layer 41 Ground contains inorganic materials. In addition, when the second layer 42 and the first layer 41 contain the same material, the second layer forming portion 203 and the first layer forming portion 201 may be set to the same configuration, or a film forming chamber may be used ( The common film-forming chamber) forms the second layer 42 and the first layer 41. Furthermore, when any one of the second layer forming section 203 and the first layer forming section 201, or the common film forming chamber is constituted by a plasma CVD apparatus, the forming section 201, 203 or the film forming chamber not only Having the above function, it may also have the function of the localization processing unit 202 described below. For example, the substrate on which the resin film is formed is carried into a plasma CVD device, and an oxidizing gas is introduced to generate plasma, whereby the resin film can be etched to localize the resin film to form a resin material. Thereafter, the second layer 42 can also be formed directly in the plasma CVD device. The resin film-forming portion 100 is a film-forming chamber, that is, the vaporized resin material is supplied into the resin film-forming portion 100, a resin material film containing a resin material is formed on the first layer 41, and the resin material film is hardened to Form a resin film. As shown in FIG. 2, the resin film-forming unit 100 includes a chamber 110 whose internal space can be decompressed, a vaporizer 300 that supplies the vaporized resin material to the chamber 110 (processing chamber), and a control unit 400. As described below, the internal space of the chamber 110 is composed of the upper space 107 and the lower space 108. A vacuum exhaust device (vacuum exhaust equipment, vacuum pump, etc.) not shown is connected to the chamber 110. The vacuum exhaust device is capable of exhausting the gas in the internal space so that the internal space of the chamber 110 becomes a vacuum environment Way composition. As shown in FIG. 2, the shower plate 105 is disposed in the internal space of the chamber 110, and the space in the chamber 110 above the shower plate 105 constitutes the upper space 107. At the uppermost portion of the chamber 110, a top plate 120 including a member capable of transmitting ultraviolet light such as quartz is provided, and an irradiation device 122 (UV irradiation device) of ultraviolet light is disposed above the top plate 120. Here, the shower plate 105 is also formed by a member that can transmit ultraviolet light, whereby the ultraviolet light energy introduced into the upper space 107 from the irradiation device 122 through the top plate 120 passes through the shower plate 105 to the shower plate 105 The lower space 108 of the lower side travels. By this, the acrylic material film (resin material film) formed on the substrate S described below can be irradiated with ultraviolet light after film formation to cure the acrylic material film to form an acrylic resin film (resin film). A heating device (not shown) is arranged in the chamber 110. The temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 can be set so as to be higher than the vaporization temperature of the resin material, preferably about 40 to 250°C, which is controlled by the heating device. A stage 102 (substrate holding portion) on which the substrate S is placed is disposed in the lower space 108 below the shower plate 105 in the chamber 110. On the stage 102, a position where the substrate should be arranged is preset on the surface. The stage 102 is disposed in the chamber 110 with the surface exposed. Symbol S indicates a substrate disposed at a specific position on the surface of the substrate stage 102. A substrate cooling device 102a for cooling the substrate S is provided on the stage 102. The substrate cooling device 102a supplies the refrigerant inside the stage 102 to cool the substrate S on the upper surface of the stage 102. Specifically, the temperature of the substrate S is controlled by the cooling device 102a built in the stage 102 (substrate holding portion) on which the substrate S is mounted, and is controlled to be below the vaporization temperature of the resin material, preferably below zero (0°C) For example, about -30℃~0℃. At a position above the stage 102, a shower plate 105 is provided facing the entire surface of the stage 102. The shower plate 105 is composed of a plate-shaped member provided with a plurality of through holes. The plate-shaped member includes an ultraviolet-transmitting material such as quartz. The shower plate 105 divides the internal space of the chamber 110 into an upper space and a lower space. A mask (not shown) is provided in the lower space 108, and the position of the mask can be set to a specific position during film formation. When the substrate moves, the mask can move away from the substrate. The upper space 107 of the chamber 110 communicates with the vaporizer 300 via a pipe 112 (resin material supply pipe) and a valve 112V. The vaporized resin material can be supplied to the upper space 107 of the chamber 110 via the resin material supply pipe 112. The resin material supply pipe 112 (first pipe) is closer to the vaporizer 300 than the valve 112V, and is connected to one end of the resin material detour pipe 113 having the valve 113V. The other end of the resin material detour pipe 113 (second piping) is connected to the outside via an exhaust pipe 114, and gas can be discharged through the resin material detour pipe 113. The exhaust pipe 114 is connected to a liquefaction recovery device, and can liquefy and recover the resin material. The opening and closing driving of the valve 112V and the valve 113V is controlled by the control unit 400. The control unit 400 is controlled in such a way that it can be switched between the film-forming state and the non-film-forming state. The film-forming state refers to supplying the vaporized resin material from the vaporizer 300 into the chamber 110; The film-forming state is directed to the outside to exhaust the gasified resin material from the vaporizer 300 without supplying it into the chamber 110. The valve 112V, the valve 113V, and the control unit 400 constitute a switching unit having a resin material supply tube 112 to supply resin material to the inside of the chamber 110, or a resin material bypass tube 113 to discharge resin material to the outside of the chamber 110 Selection function of qi. The vaporizer 300 can supply the vaporized resin material to the chamber 110. As shown in FIG. 2, the vaporizer 300 has a vaporization tank 130, a discharge part 132 and a resin material raw material container 150. As shown in FIG. 2, the vaporization tank 130 has an internal space for vaporizing the liquid resin material, and above the internal space, a discharge portion 132 for discharging the liquid resin material in a mist state is arranged. The gasification tank 130 is formed in a substantially cylindrical shape, but it may be set in another cross-sectional shape. The inner surface of the gasification tank 130 may include, for example, SUS, Al, or the like. One end of the resin material liquid supply pipe 140 connected to the resin material raw material container 150 via the valve 140V and a carrier gas supply pipe 130G that supplies a carrier gas such as nitrogen gas are connected to the discharge part 132. The other end of the resin material liquid supply pipe 140 is connected to the resin material raw material container 150 and is located inside the liquid resin material stored in the resin material raw material container 150. The resin material raw material container 150 is connected to a pressurized gas supply pipe 150G for supplying a material liquid such as nitrogen gas, and can be sent to the resin material liquid supply pipe 140 to increase the internal pressure of the resin material raw material container 150 to be pressurized. Resin material. The ejection portion 132 is configured to eject the liquid resin material supplied from the resin material liquid supply tube 140 into the internal space of the gasification tank 130 in the form of mist together with the carrier gas. The ejection portion 132 is provided at a substantially central position on the top of the gasification tank 130. The heating portion 135 having a slope may be provided in the internal space of the gasification tank 130, and the resin material may be sprayed to the heating member in the form of a mist. A vacuum gauge PG is installed in the gasification tank 130, so that the internal pressure can be measured. In addition, a temperature control device for controlling the temperature of the surface in contact with the internal space is provided on the side wall of the gasification tank 130, specifically, a heater for heating the side wall of the gasification tank 130 is provided. The resin material supply pipe 112 (first pipe) connected to the gasification tank 130 is also provided with a heater as the same temperature adjusting device. The heater is wound around the resin material supply pipe (first pipe) so that the vaporized resin material does not condense on the wall surface. In addition, a heater may be installed in the resin material bypass tube 113 as the same temperature adjusting device. Such heaters can set the temperature of the surface exposed to the vaporized resin material to be higher than the vaporization temperature of the resin material, thereby preventing the resin material from liquefying. At the same time, the temperature is set in such a way as to minimize the heating and curing of the resin material. When the vaporizer 300 vaporizes the resin material, the heater is used to heat the vaporization tank 130 and the resin material supply pipe 112 (first pipe). At the same time, the control unit 400 causes the valve 112V to be closed to form a state in which gas cannot flow into the resin material supply pipe 112, and the valve 113V is opened to form a state in which gas can flow into the resin material bypass pipe 113. In this state, the internal pressure of the resin material raw material container 150 is raised, and the liquid resin material supplied from the resin material liquid supply pipe 140 is sprayed together with the carrier gas from the ejection portion 132 into the gasification tank 130 Space squirted. At this time, the resin material and the carrier gas supplied to the ejection portion 132 may be further heated. The resin material ejected from the ejection portion 132 into the internal space of the vaporization tank 130 together with the carrier gas is vaporized inside the heated vaporization tank 130. In addition, in this embodiment, an ultraviolet curing resin material may be used as the resin material. The ultraviolet curing resin material may be partially polymerized or deteriorated due to heating or the like. The resin after such a change has the possibility that the evaporation temperature rises and the resin remains on the surface of the heating section 135 or the vaporization tank 130 without evaporating, and the evaporation amount changes. While the gasification of the resin material is stably proceeding, the valve 112V is opened by the control unit 400, and the forming gas can flow into the resin material supply pipe 112, and the valve 113V is closed. It flows into the state where the resin material detours 113. With this, the vaporized resin material can be supplied to the chamber 110 to perform the film forming process. By the driving of the switching unit, that is, only by switching the opening and closing states of the valve 112V and the valve 113V by the control unit 400, the supply of resin material to the resin material supply pipe 112 (first piping) and the detour to the resin material can be selected The tube 113 (second piping) supplies the resin material. Therefore, the supply amount of the vaporized resin material supplied to the chamber 110 can be stabilized, so that the film formation rate at the start of film formation can be stabilized. The resin film-forming unit 100 is formed, for example, in such a manner that film formation and ultraviolet irradiation can be performed in the same chamber 110, and the film formation is performed on an ultraviolet-curable acrylic resin material at a vaporization temperature of about 40 to 250°C. Film; the above-mentioned ultraviolet irradiation is used to harden the resin material after film formation. Thereby, any processing step can be performed with the same device configuration, and productivity can be improved. In the resin film forming section 100, as step B in the manufacturing method (film forming method) of the element structure of this embodiment, the supply of the resin material is controlled when the following liquid resin material film 5a is formed. As shown in FIG. 3, step B has a calibration curve acquisition step S01, a compensation time setting step S02, an external exhaust gas switching step S03, a vaporization start step S04, a vaporization duration measurement step S05, a film thickness setting step S06, supply Time setting step S07, substrate carry-in step S08, supply start step S09, supply time measurement step S10, supply stop step S11, substrate carry-out step S12, and vaporization stop step S13. In the calibration line acquisition step S01 shown in FIG. 3, the film formation time per substrate is fixed as shown in FIG. 15 with respect to the supply amount of the vaporized resin material from the vaporizer 300 to measure the film thickness . At this time, in a state where the supply amount of the resin material from the resin material raw material container 150 is fixed and stably supplied, a plurality of substrates S are sequentially formed so as to have the same film formation processing time, and each measurement is performed The reduced part (decrease) of the film thickness is used as the calibration line. As shown in FIG. 15, relative to the cumulative supply amount to the vaporizer 300 (the cumulative resin material supply amount (g) of the vaporizer), that is, as the duration of the vaporization passes, the film thickness of each substrate (= Film rate) decreases. In response to this reduction, a straight line is drawn in the graph as the calibration curve. In the compensation time setting step S02 shown in FIG. 3, with respect to the calibration line acquired in the calibration line acquisition step S01, in order to compensate for the reduction of the film formation processing time initially set, it corresponds to Accumulate the amount of resin material supplied and set the compensation time to increase the film formation processing time per piece. The compensation time is set in such a way as to compensate for the reduction in film formation rate relative to the target film thickness of the film to be formed. Changes in compensation time or film formation rate tend to be memorized in the control unit. Next, in the external exhaust gas switching step S03 shown in FIG. 3, the control unit 400 switches the opening and closing states of the valve 112V and the valve 113V, and the self-vaporizer 300 bypasses the resin material bypass tube 113 (second piping) Supply resin material. In the gasification start step S04 shown in FIG. 3, in this state, as described above, the gasification of the resin material is started in the gasifier 300. At the same time, as the gasification duration measurement step S05 shown in FIG. 3, the measurement of the gasification duration which becomes the reference for calculating the compensation time is started. Then, in the film thickness setting step S06 and the supply time setting step S07 shown in FIG. 3, the compensation time is calculated in advance based on the target film thickness and the vaporization duration time at the start of film formation. Specifically, it is set so as to extend the film formation time per supply time corresponding to the vaporization duration of the vaporized resin material. Then, in the substrate carrying-in step S08 shown in FIG. 3, the substrate S is carried into the resin film forming unit 100. Next, in the supply start step S09 shown in FIG. 3, the control unit 400 switches the opening and closing states of the valve 112V and the valve 113V, and the resin is supplied from the vaporizer 300 to the resin material supply pipe 112 (first pipe) The material begins to form a film. At the same time, as the supply time measurement step S10 shown in FIG. 3, the measurement of the supply amount of the resin material converted into the film thickness of the film is started. Then, in the supply stop step S11 shown in FIG. 3, the control unit 400 switches the opening and closing states of the valve 112V and the valve 113V according to the supply time set in the supply time setting step S07, and the autogasifier 300 The resin material detour tube 113 (second piping) supplies the resin material, obtains the target film thickness, and completes the film formation. Next, as the substrate carrying-out step S12 shown in FIG. 3, the film-formed substrate S is carried out from the resin film-forming unit 100. If necessary, repeat from the film thickness setting step S06 to the substrate carrying out step S12 a plurality of times. At this time, the gasification duration measured in the gasification duration measurement step S05 is accumulated, and based on this value, the compensation time is recalculated every time in the supply time setting step S07 to control the switching time in the supply stop step S11. Specifically, in order to compensate for the decrease in the amount of resin material due to the occurrence of heat curing, etc., in accordance with the increase in the gasification duration of the resin material in the gasifier 300, the film formation time, that is, the supply time is extended by the compensation supply time Setting. Then, as the gasification stop step S13 shown in FIG. 3, the gasification in the gasifier 300 is stopped, and the measurement of the gasification duration is ended. In addition, the film thickness setting step S06 and the supply time setting step S07 may be performed as long as the steps performed after the substrate loading step S08, that is, the steps of actually performing film formation, and the implementation timing and order are not limited to the above-mentioned step order. In addition, even if the gasifier 300 is not continuously operated, the gasification efficiency will be reduced due to the accumulation of the gasification time since the latest clearing. Even if the operation and stop of the gasifier 300 are repeatedly executed, as long as the gasification time is accumulated, the reduction amount of the gasification efficiency can be calculated. As a method of manufacturing the element structure of the present embodiment, as described above, the supply state is controlled to compensate for the supply of the vaporized resin material that decreases in accordance with the processing time. By this, the film forming rate of the resin material is stabilized regardless of the elapse of the vaporization duration, and as shown in FIG. 16, even in the case of sequentially forming a film on a plurality of substrates S, the resin material can also be made The film forming rate is stable regardless of the film forming times and film forming time. Therefore, it is possible to prevent variations in film forming characteristics, and variations in film characteristics (film thickness) can be prevented. Furthermore, the control of each step can be performed by the control unit 400, and the calculation of the calibration curve or the calculation and accumulation of the film-forming time can also be performed by the arithmetic unit of the control unit 400. Furthermore, the memory of the necessary data is also executed by the memory unit of the control unit 400. Hereinafter, the element structure 10 manufactured by the device 1000 for manufacturing an element structure of the present embodiment will be described. 4 is a schematic cross-sectional view showing an element structure of this embodiment. FIG. 5 is a plan view showing the element structure of FIG. 4. 6 is an enlarged view showing the main part of the device structure. In each figure, the X-axis, Y-axis, and Z-axis directions represent three-axis directions that are orthogonal to each other. In this embodiment, the X-axis and Y-axis directions represent horizontal directions that are orthogonal to each other, and the Z-axis direction represents a vertical direction. The element structure 10 of this embodiment includes: a substrate 2 including a device layer 3 (functional layer); a first inorganic material layer 41 (first layer) formed on the front surface 2a of the substrate 2 and covering the functional layer 3, and The local convex portion includes an inorganic material such as silicon nitride (SiN _x ); and a second inorganic material layer 42 (third layer), which covers the first inorganic material layer 41 and is the same as the first layer 41. In this embodiment, the element structure 10 is composed of a light-emitting element having an organic EL light-emitting layer. The substrate 2 has a front surface 2a (first surface) and a back surface 2c (second surface), and is composed of, for example, a glass substrate, a plastic substrate, or the like. The shape of the substrate 2 is not particularly limited, and in this embodiment, it is formed in a rectangular shape. The size, thickness, etc. of the substrate 2 are not particularly limited, and a substrate having an appropriate size and thickness may be used corresponding to the size of the device size. In the present embodiment, a plurality of element structures 10 are manufactured from an aggregate of the same elements fabricated on one large-sized substrate S. The device layer 3 (functional layer) is composed of an organic EL light-emitting layer including an upper electrode and a lower electrode. In addition to such a configuration, the device layer 3 may be composed of various functional elements including materials that are easily deteriorated due to moisture, oxygen, etc., such as the liquid crystal layer in the liquid crystal element or the power generation layer in the power generation element. The device layer 3 is formed on a specific area of the front surface 2a of the substrate 2. The planar shape of the device layer 3 is not particularly limited. In the present embodiment, it is formed into a substantially rectangular shape. However, in addition to this shape, a circular shape, a linear shape, or the like may be used. The device layer 3 is not limited to the example disposed on the front surface 2a of the substrate 2 as long as it is disposed on at least one of the front surface 2a and the back surface 2c of the substrate 2. The first inorganic material layer 41 (first layer) is provided on the surface 2a of the substrate 2 on which the device layer 3 is arranged, and constitutes a convex portion covering the front surface 3a and the side surface 3s of the device layer 3. The first inorganic material layer 41 has a three-dimensional structure that protrudes upward from FIG. 6 from the front surface 2a of the substrate 2. The first inorganic material layer 41 includes an inorganic material that can protect the device layer 3 from moisture or oxygen. In the present embodiment, the first inorganic material layer 41 is composed of silicon nitride (SiN _x ) having excellent water vapor barrier properties, but the material is not limited thereto. The first inorganic material layer 41 may also be composed of other silicon compounds such as silicon oxide or silicon oxynitride, or other inorganic materials having water vapor barrier properties such as aluminum oxide. The first inorganic material layer 41 is formed on the front surface 2a of the substrate 2 by using a suitable mask, for example. In this embodiment, the first inorganic material layer 41 is formed using a mask having a rectangular opening with a size capable of accommodating the device layer 3. The film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like can be applied. The thickness of the first inorganic material layer 41 is not particularly limited, and is, for example, 200 nm to 2 μm. Like the first inorganic material layer 41, the second inorganic material layer 42 (second layer) includes an inorganic material that can protect the device layer 3 from moisture or oxygen, and the front surface of the first inorganic material layer 41 The surface 41 a and the side surface 41 s are covered on the front surface 2 a of the substrate 2. In the present embodiment, the second inorganic material layer 42 is composed of silicon nitride (SiN _x ) having excellent water vapor barrier properties, but the material is not limited thereto. The second inorganic material layer 42 may be composed of other silicon compounds such as silicon oxide or silicon oxynitride, or other inorganic materials having water vapor barrier properties such as aluminum oxide. The second inorganic material layer 42 is formed on the front surface 2a of the substrate 2 by using a suitable mask, for example. In this embodiment, the second inorganic material layer 42 is formed by using a mask having a rectangular opening with a size capable of accommodating the first inorganic material layer 41. The film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like can be applied. The thickness of the second inorganic material layer 42 is not particularly limited, and is, for example, 200 nm to 2 μm. The element structure 10 of this embodiment further includes a first resin material 51. The first resin material 51 is concentrated around the first inorganic material layer 41 (convex portion). In the present embodiment, the first resin material 51 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42 and is concentrated on the side surface 41s of the first inorganic material layer 41 and the front surface 2a of the substrate 2 Of the boundary 2b. The first resin material 51 has a function of filling the gap G (FIG. 6) between the first inorganic material layer 41 formed near the boundary portion 2b and the substrate front surface 2a. In FIG. 6, the peripheral structure of the boundary portion 2b of the element structure 10 is enlarged and shown. Since the first inorganic material layer 41 is formed of a CVD film or a sputtered film of an inorganic material, the coverage characteristic (step coverage) of the uneven structure surface of the substrate 2 including the device layer 3 is relatively low. As a result, as shown in FIG. 6, the first inorganic material layer 41 coated on the side surface 3s of the device layer 3 has a reduction in the coating characteristics near the front surface 2a of the substrate, the coating film thickness is extremely small, or there is no coating film at all. Yu. Therefore, in the present embodiment, by biasing the first resin material 51 in the poorly coated region around the first inorganic material layer 41 as described above, moisture or oxygen is suppressed from the poorly coated region to the device layer 3 Internal intrusion. In addition, during the film formation of the second inorganic material layer 42, by making the first resin material 51 function as a base layer of the second inorganic material layer 42, the appropriate film formation of the second inorganic material layer 42 can be performed, so that The side surface 41s of the first inorganic material layer 41 is appropriately covered with a desired film thickness. The method of forming the first resin material 51 is as follows: a resin material vaporized by spray vaporization is supplied to the substrate front surface 2a to be condensed to form a resin material film 5a, and the resin material film 5a is hardened to form the resin film 5, and then The first resin material 51 is formed by a localization step of removing non-essential parts. Hereinafter, a method of manufacturing the element structure by the device for manufacturing an element structure of this embodiment will be described. 7 to 11 are process diagrams schematically showing a method of forming the first resin material 51 in the method of manufacturing the element structure of this embodiment. (Example of formation steps of device layer ~ step A) First, in the manufacturing apparatus 1000 of the element structure shown in FIG. 1, the substrate S carrying the self-loading interlocking vacuum chamber 210 into the core chamber 200 is passed through The substrate transfer robot transfers from the core chamber 200 to the functional layer forming unit 204. In the functional layer forming portion 204, the device layer 3 (functional layer) is formed in a specific region on the substrate S. In the present embodiment, as the region to be the functional layer 3, a plurality of regions on the substrate S can be used, for example, two regions are arranged at specific intervals in the X-axis direction and the Y-axis direction, respectively. Or it becomes the area of the functional layer 3 alone. The method of forming the device layer 3 is not particularly limited, and can be appropriately selected according to the material and composition of the device layer 3. For example, the substrate S is transported to the film forming chamber of the functional layer forming section 204, etc., and a specific material is vapor-deposited or sputtered onto the substrate S, and then a patterning process is performed. The desired device layer 3 is formed thereon. The method of pattern processing is not particularly limited, and for example, etching or the like can be used. In addition, the specific configuration of the device 1000 for manufacturing a device structure is omitted in FIG. 1. The functional layer forming portion 204 may be composed of a plurality of processing chambers, and may have a configuration of a transport device that can transport the substrate S between adjacent processing chambers. Or a structure other than a vacuum device may be used. That is, the substrate S can be processed outside the manufacturing apparatus 1000 of the element structure without loading the interlocking vacuum chamber 210. (Example of the first layer formation step ~ step A) Next, the substrate S on which the device layer 3 is formed is carried out from the functional layer forming part 204 by a substrate transfer robot (not shown), and is carried into the first layer through the core chamber 200形成部201。 Forming portion 201. In the first layer forming portion 201, the first inorganic material layer 41 (first layer) is formed in a specific area on the substrate S including the area of the device layer 3 so as to cover the device layer 3. As a result, as shown in FIG. 7, the first inorganic material layer 41 covering the device layer 3 is formed so as to have the convex portion on the substrate S. In this step, for example, a mask having several openings corresponding to the area of the first inorganic material layer 41 may also be used, for example, the first inorganic material layer 41 made of silicon nitride is formed as part of the protective layer. Here, the first layer forming portion 201 may be configured to have a CVD processing apparatus or a sputtering processing apparatus. Although not shown, the film forming chamber of the first layer forming portion 201 is provided with a stage on which the substrate S is arranged, a mask arranged on the substrate S, a support mask and a substrate S on the stage A mask alignment device that performs mask alignment, etc., and a film forming material supply device, etc. The substrate S on which the device layer 3 is formed is placed on the stage of the first layer forming part 201 by a substrate transfer robot or the like arranged in the core chamber 200. A mask alignment device or the like is used to arrange the mask at a specific position on the substrate S so that the device layer 3 is exposed through the opening of the mask. Then, for example, the first inorganic material layer 41 made of silicon nitride or the like is formed by covering the device layer 3 by the CVD method. In addition, the method of forming the first inorganic material layer 41 is not limited to the CVD method, and for example, a sputtering method may also be used. In this case, the first layer forming portion 201 is configured to have a sputtering device. (Examples of forming steps of resin film ~ film forming step ~ step B, step C) Next, the substrate S on which the first inorganic material layer 41 having convex portions is formed is formed from the first layer by a substrate transport robot not shown The unit 201 is carried out and carried into the resin film-forming unit 100 via the core chamber 200. At this time, the gas in the chamber 110 is exhausted by the vacuum exhaust device to maintain the vacuum state in the chamber 110. After that, by continuously driving the vacuum exhaust device, the environment of the chamber 110 is maintained in a vacuum environment. At this time, the chamber 110 is set so that the temperature of at least the inner surface side of the upper space 107 and the lower space 108 becomes higher than the vaporization temperature of the resin material by the heating device. At the same time, the substrate S arranged on the stage 102 and the stage 102 are cooled together to a temperature lower than the vaporization temperature of the resin material by the substrate cooling device 102a. In addition, the heater 112d forms a state in which the resin material supply pipe 112 (first pipe) is heated to a temperature higher than the vaporization temperature of the resin material. The resin film forming unit 100 performs a step of forming the resin material film 5a on the substrate S on which the first inorganic material layer 41 is formed, and a step of forming the resin film 5 by hardening the resin material film 5a. In this step, first, the resin film-forming portion 100 is used, for example, to form a resin material film 5a containing a material of an ultraviolet-curable acrylic resin. Regarding the step of forming the resin material film 5a in the resin film-forming portion 100, before the substrate S is loaded, as shown in FIG. 3, as the calibration line acquisition step S01 and the compensation time setting step S02, the calibration line is acquired and the compensation is set time. Then, as shown in FIG. 3, as the external exhaust gas switching step S03, the vaporization start step S04, and the vaporization duration measurement step S05, the vaporizer 300 performs processing for stably vaporizing the resin material. During the gasification stabilization process, the control unit 400 turns the valve 112V into a closed state, and the formed gas cannot flow into the resin material supply pipe 112, and the valve 113V is turned into an open state, while maintaining the gas flow into The resin material detours the state of the tube 113. Furthermore, the gasification of the resin material in the gasifier 300 is preferably maintained for a necessary time before the film formation process according to the stability of the amount of the gasified resin material supplied. Next, as shown in FIG. 3, as the film thickness setting step S06, the supply time setting step S07, and the substrate loading step S08, the film formation film thickness is set, and the processing time required for the processing is set by the control unit 400, as described above, The substrate S carried into the resin film-forming unit 100 is placed on the stage 102. On the substrate S arranged on the stage 102, a mask (not shown) is arranged at a specific position on the substrate S by a mask mounting device or the like. Then, by the control unit 400 in such a manner that the conditions such as the mask alignment state, the environment in the chamber 110, the temperature of the inner wall of the chamber 110, the temperature of the resin material supply tube 112, and the temperature of the substrate S become specific states, Make settings. Next, as shown in FIG. 3, as the supply start step S09 and the supply time measurement step S10, the control unit 400 switches the opening and closing states of the valve 112V and the valve 113V. As a result, the valve 112V is opened, the gas flows into the resin material supply pipe 112, and the valve 113V is closed, so that the gas does not flow into the resin material bypass pipe 113V. With this, the vaporized resin material is supplied to the chamber 110. The vaporized resin material supplied from the vaporizer 300 passes through the interior of the resin material supply pipe 112 and is supplied from the upper space 107 through the shower plate 105 into the lower space 108. In the lower space 108, the vaporized resin material supplied substantially uniformly to the entire surface of the substrate S by the shower plate 105 is condensed on the substrate front surface 2a to become a liquid resin material film 5a as shown in FIG. 8. In the liquid resin material film 5a, the corners, recesses, gaps, etc. of the corners on the front surface 2a of the substrate are thickened by surface tension due to surface tension. In this step B, the processing time (supply time) is controlled by the control unit 400 in order to compensate for the resin material that decreases corresponding to the vaporization duration, thereby making the film formation rate uniform. At this time, the resin material film 5a may be formed only in a region close to the convex portion 41 (nearby position) and the like through a mask (not shown). In addition, it is preferable that the supply amount of the resin material supplied from the vaporizer 300 is controlled by the control unit 400 in consideration of the liquefaction and film formation rate of the resin material. The resin material liquefied on the surface of the substrate S penetrates into a fine gap by capillary phenomenon or agglomerates by the surface tension of the resin material, so that the fine irregularities on the substrate S can be smoothed while forming the resin material film 5a . As a result, the film thickness of the resin material film 5a becomes thicker at the corners, recesses, gaps, and the like having poor corners on the surface of the substrate S. In particular, the fine gap between the side surface 41s of the first inorganic material layer 41 and the boundary portion 2b of the front surface 2a of the substrate 2 can be filled with the resin material film 5a. Moreover, the vaporized resin material does not condense on the surface of the inner wall of the chamber 110 or the like because the chamber 110 is heated. After the supply time based on the set compensation time has elapsed, as shown in FIG. 3, as a supply stop step S11, a resin material film 5a of a specific thickness is formed on the surface of the substrate S. After that, the control unit 400 causes the valve 112V to be closed to prevent the gas from flowing into the chamber 110, and the valve 113V to be opened to form the state where the gas can flow into the resin detour tube 113. Since the chamber 110 is continuously exhausted, the vaporized resin material is discharged to the outside of the chamber 110 to stop the film formation. In this state, while maintaining the vacuum environment in the chamber 110, the surface of the substrate S is irradiated with ultraviolet rays from the UV irradiation device 122. The irradiated ultraviolet rays pass through the top plate 120 and the shower plate 105 including an ultraviolet transmitting material such as quartz and reach the substrate S in the chamber 110. A part of the ultraviolet rays irradiated to the substrate S in the chamber 110 is incident on the surface of the substrate S, and a photopolymerization reaction occurs on the resin material film 5a formed on the surface of the substrate S, and the liquid film 5a is hardened. As shown in FIG. 9, a resin film 5 is formed on the surface of the substrate S. In this embodiment, a thin film of acrylic resin is formed. Then, a mask mounting device or the like is used to move a mask (not shown) from the film forming position on the substrate S to the retracted position. After step B is completed, as shown in FIG. 3, as the substrate carrying-out step S12, the substrate S on which the resin film 5 is formed is carried out from the resin film forming unit 100 by a substrate carrying robot (not shown). When the resin films 5 are sequentially formed on a plurality of substrates S, the above method is repeatedly performed. When the maintenance of the resin film-forming unit 100 or the maintenance of the vaporizer 300 is required, the vaporization stop step S13 is stopped. Gasification of the resin material in the gasifier 300. (Example of forming steps of resin material ~ localization step ~ step C) Next, the substrate S carried out from the resin film forming section 100 is carried into the localization processing section 202 through the core chamber 200 by a substrate transfer robot (not shown) . Here, the localization processing unit 202 may be configured to have a dry etching processing apparatus, especially a plasma etching processing apparatus. In addition, although not shown, the localization processing unit 202 may be a parallel plate type plasma processing device. In this case, in the localization processing section 202, the substrate S is placed on the electrode, the etching gas is introduced into the chamber, and the high frequency generated by the high-frequency power source is irradiated into the chamber through the antenna to generate plasma And, a bias voltage is applied to the electrode on which the substrate S is mounted from a high-frequency power source. The ions present in the plasma are introduced into the substrate mounted on the electrode, and the resin film 5 formed on the surface of the substrate S is etched to remove it. Here, the resin film 5 is etched by ions in the plasma generated from an etching gas such as an oxidizing gas. At this time, in order to introduce ions to the substrate S on the electrode, a bias voltage may be applied to the electrode. The resin film 5 of the flat portion with a thin film thickness is removed by etching, and the resin film 5 with a thicker portion of the flat portion remains on the surface of the substrate S at corners, recesses, gaps, and the like. The remaining part becomes the first resin material 51. Furthermore, when the first layer forming part 201 or the second layer forming part 203 has a sputtering device or a plasma CVD device, the forming parts 201 and 203 not only have a film-forming function, but also have localization The function of the processing unit 202. In this case, for example, as the first layer forming unit 201, the second layer forming unit 203, and the localization processing unit 202, the same processing device can be used. In the localization processing section 202, as shown in FIG. 10, in the substrate S on which the resin film 5 is formed, for example, by plasma etching, as step C, most of the resin film 5 is shown in FIG. Remove. The plasma processing can calculate the processing time according to the etching rate and perform a specific processing time. Furthermore, a detection device may be provided in the localization processing unit 202. The detection device measures the bias voltage applied to the electrode, and judges that the resin film 5 on the substrate S has been almost completely removed according to the change in the measured value, and uses the judgment result (detection result) as the end point of the etching process. As shown in FIG. 11, the first resin material 51 remaining on the substrate S by the etching process is localized (localized) at the boundary portion 2b between the side surface 41s of the first inorganic material layer 41 and the front surface 2a of the substrate 2. Furthermore, the first resin material 51 is unevenly present in a portion that can smooth fine irregularities on the surface of the first inorganic material layer 41. (Examples of forming steps of the second layer to step D) The substrate S in which the first resin material 51 is locally formed is removed from the localization processing unit 202 by a substrate transfer robot (not shown) and passes through the core chamber 200 It is carried into the second layer forming section 203. In the second layer forming portion 203, the second inorganic material layer 42 (second) is formed on a specific area on the substrate S including the convex portion so as to cover the first inorganic material layer 41 on which the first resin material 51 is formed Floor). In this step D, similar to the first inorganic material layer 41, a mask having several openings corresponding to the area of the second inorganic material layer 42 is used to form an example of the same material as the first inorganic material layer 41 The second inorganic material layer 42 (second layer) containing silicon nitride. With this, the device layer 3 (functional layer) can be covered with the first inorganic material layer 41 (first layer), the first resin material 51 and the second inorganic material layer 42 (second layer), and the like can be used as a protective device The protective layer of layer 3 functions. Here, the second layer forming portion 203 may be configured to have a CVD processing apparatus or a sputtering processing apparatus. The second layer forming portion 203 may have the same device configuration as the first layer forming portion 201 described above. For example, as the first layer forming portion 201 and the second layer forming portion 203, the same processing device may be used, or the second layer forming portion 203 may also function as the first layer forming portion 201. In addition, when the second layer forming portion 203 is a plasma CVD processing apparatus, the second layer forming portion 203 may also have the function of the localization processing portion 202. If the first resin material 51 is localized in the second layer forming portion 203, the second inorganic material layer 42 (second layer) can be directly formed after localization. Thereafter, the substrate S on which the second inorganic material layer 42 is formed is carried out from the second layer forming part 203 by a substrate conveying robot (not shown), and is carried out to the element structure through the core chamber 200 and the load lock chamber 210 The outside of the manufacturing device 1000. In the device 1000 for manufacturing an element structure of this embodiment, as the step B, the resin film 5 is formed by the resin film-forming portion 100. Thereafter, in the localization processing section 202, as step C, the first resin material 51 localized by the plasma etching process is formed. After that, the second inorganic material layer 42 (second layer) is formed, whereby the second inorganic material layer 42 (second layer) can be reliably formed in a portion required to have barrier properties as a protective layer, such as the boundary portion 2b . Furthermore, the control unit 400 controls the stabilization of the film forming rate of the resin material, specifically, in step B, the resin material that is reduced corresponding to the gasification duration for operating the gasifier 300 is compensated the amount. Therefore, by controlling the supply state in such a way as to prolong the film formation time, that is, the supply time, the film formation rate can be stabilized, thereby preventing variations in film characteristics. According to the manufacturing method of the element structure of this embodiment, as shown in FIG. 15, when the supply time is simply set to be fixed with respect to the target film thickness, as shown in FIG. 16, it corresponds to the continuous gasification. As for the film thickness reduced by the time (acrylic acid supply amount), the supply time (treatment time) is set by adding a compensation time that is extended in accordance with the vaporization duration (acrylic acid supply amount). It can be seen that even if repeated several times, the same film thickness will be formed. That is, it is possible to compensate for the decrease in film formation rate. Hereinafter, another example of the device structure manufactured by the device 1000 for manufacturing a device structure of the present embodiment will be described. In the element structure 10 of this example manufactured by the device 1000 for manufacturing an element structure of this embodiment, it is not limited to that the resin material is concentrated around the first inorganic material layer 41 (convex portion), that is, the boundary portion The structure of 2b may be, for example, the resin material remaining on the front surface 2a of the substrate 2 other than the boundary portion 2b or the front surface 41a of the first inorganic material layer 41. In this case, as shown in FIG. 12, the second inorganic material layer 42 (second layer) has a region stacked on the first inorganic material layer 41 via the second resin material 52. The second resin material 52 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42 and is present on the front surface 41 a of the first inorganic material layer 41 independently of the first resin material 51. As described above, according to the element structure 10 of this embodiment, the side surface of the device layer 3 is covered with the first inorganic material layer 41 (first layer) and the second inorganic material layer 42 (second layer), so it can prevent moisture or Oxygen intrudes into the device layer 3. In addition, according to the present embodiment, the first resin material 51 is unevenly present in the boundary portion 2b, so that it is possible to prevent the deterioration of the barrier properties caused by poor coverage of the first inorganic material layer 41 or the second inorganic material layer 42, thereby Can maintain stable device characteristics for a long time. Hereinafter, another example of the device structure manufactured by the device 1000 for manufacturing a device structure of the present embodiment will be described. As shown in FIG. 13, the element structure 20 of this example further includes a second resin material 52 interposed between the first inorganic material layer 41 and the second inorganic material layer 42. The second resin material 52 is present on the surface of the first inorganic material layer 41 while being separated from the first resin material 51. In the element structure 20 of this example, the surface of the first inorganic material layer 41 is not necessarily flat. For example, the following cases are illustrated: before the film formation (when the substrate is transported or before being put into the film formation apparatus) or film formation At times, the fine particles P are mixed into the film, resulting in the formation of irregularities. When fine particles are mixed into the first inorganic material layer 41, the coverage characteristics of the first inorganic material layer 41 on the device layer 3 may be reduced, and there is a possibility that the desired barrier characteristics cannot be obtained. Therefore, the element structure 20 of this example has a structure in which the second resin material 52 is filled in the defective coating portion of the first inorganic material layer 41 caused by the mixing of the fine particles P or the like. Typically, the second resin material 52 is concentrated on the boundary portion 32b between the surface of the first inorganic material layer 41 and the peripheral surface of the fine particles P due to surface tension. As a result, the coverage of the device layer 3 is improved, and by making the second resin material 52 function as a base, proper film formation of the second inorganic material layer 42 can be achieved. In addition, the resin film 5 can be formed thinly on the flat portion during film formation. Around the fine particles P, a resin film 5 thicker than the flat portion is formed by surface tension. The second resin material 52 is formed by the same method as the first resin material 51. The second resin material 52 may be composed of the same organic substance as the first resin material 51. In this case, the first resin material 51 and the second resin material 52 can be simultaneously formed in the same step. Here, in the localization processing section 202, the etching of the resin film 5 is stopped when the thinner part is removed by etching, and the thicker part is left, that is, in the presence of fine particles P In the part other than the part, the resin film 5 is removed, and the first inorganic material layer 41 is exposed. As a result, when the convex portion is viewed from above in the vertical direction, the resin film 5 of the boundary portion 32b covered by the fine particles P is not over-etched, so that the resin film 5 reliably remains on the boundary portion 32b around the fine particles P. As a result, the resin film 5 has a smooth surface shape at the boundary portion 32b near the fine particles P. If the fine particles P do not exist at all, when the resin film 5 has been substantially removed by anisotropic etching, the resin film 5 will be completely removed, so that the first inorganic material layer 41 is exposed. Furthermore, the stopping of the etching can be performed based on the results of the plasma emission spectrum analysis or the elapsed time of the anisotropic etching. At this time, the resin film 5 at the boundary portion 2b is not removed, and the resin film 5 is localized, whereby the first resin material 51 is formed. Similarly, the resin film 5 at the boundary portion 32b is not removed, and the resin film 5 is localized, thereby forming the second resin material 52. In this example, the same effects as the above-mentioned device structure 10 can also be obtained. In addition, according to this example, the second resin material 52 can compensate for the decrease in the film quality caused by the mixing of the fine particles P, so that the desired barrier characteristics can be ensured and the productivity can be improved. Hereinafter, another example of the device structure manufactured by the device 1000 for manufacturing a device structure of the present embodiment will be described. As shown in FIG. 14, the element structure 30 of this example includes, for example, a substrate 21 having a device layer 3 (functional layer); a convex portion 40 covering the side surface 3s of the device layer 3; and a first inorganic material layer 41 ( The first layer) and the second inorganic material layer 42 (second layer) are formed on the surface of the substrate 21 so as to cover the convex portion 40 and the device layer 3. The convex portion 40 is formed on the front surface 21a of the substrate 21, and has a concave portion 40a that accommodates the device layer 3 in the center portion. In this example, the bottom surface of the recess 40a is formed at a position higher than the front surface 21a of the substrate 21, or may be formed at the same height position as the front surface 21a, or may be formed at a position lower than the front surface 21a. The element structure 30 of this example further includes a resin material 53 interposed between the first inorganic material layer 41 and the second inorganic material layer 42. The resin material 53 is concentrated on the boundary portion 21 b between the outer surface of the convex portion 40 and the front surface 21 a of the substrate 21 and the boundary portion 22 b between the inner surface of the convex portion 40 and the device layer 3. As a result, poor coverage of the first inorganic material layer 41 and the second inorganic material layer 42 on the convex portion 40 and the front surface 3a of the device layer 3 can be suppressed, and the barrier properties can be improved. The resin material 53 can be formed by the same method as the first resin material 51 and the second resin material 52 described above. In the substrate S having such irregularities, the part that cannot be covered by the inorganic material layer is more flattened by the resin material that is concentrated. Therefore, the inorganic material layer formed on the resin material can be formed more uniformly and with good coverage. Furthermore, the sealing of the resin material against water or the like is lower than that of the inorganic material layer, but the resin material that is unevenly concentrated is covered by the inorganic material layer and is not exposed to the external environment, so the sealing performance is improved. That is, it is preferable that the resin material is not concentrated in the external environment, rather than being in the form of a film. In the above, the preferred embodiments of the present invention have been described, and as described above, they are only exemplary illustrations of the present invention, and it should be understood that they should not be considered as limiting. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the invention. Therefore, the present invention should not be regarded as limited by the above description, but by the scope of application. For example, in the above embodiment, the second inorganic material layer 42 (second layer) covering the first inorganic material layer 41 (first layer) is composed of a singular layer, but the second inorganic material layer 42 (second Layer) may also be composed of a multilayer film. In this case, the resin material may be supplied to the substrate at each step of forming each layer of the film to form a resin material that is concentrated in the uneven portion of the substrate, thereby further improving the barrier property. Furthermore, in the above embodiment, after the first inorganic material layer 41 (first layer) is formed, the first resin material 51 is localized around the first inorganic material layer 41 that becomes the convex portion, but it can also be Before the first inorganic material layer 41 is formed by the first layer forming portion 201, the first resin material 51 is concentrated around the device layer 3 by the resin film forming portion 100 and the localization processing portion 202. Thereby, the coating efficiency of the first inorganic material layer 41 on the device layer 3 can be improved. Hereinafter, a film forming method, a film forming apparatus, a method for manufacturing a device structure, and a device for manufacturing a device structure according to a second embodiment of the present invention will be described based on the drawings. FIG. 17 is a flowchart showing a manufacturing method (film forming method) of the element structure of this embodiment. In this embodiment, the difference from the first embodiment described above relates to the compensation method of the film forming rate. Other components corresponding to the above-mentioned first embodiment are denoted by the same symbols, and their descriptions are omitted. In the above-mentioned first embodiment, in order to compensate for the reduced film-forming rate, the film-forming time of each substrate S is extended, but in this embodiment, the resin material supplied from the vaporizer 300 to the resin film-forming unit 100 is controlled The amount of supply increases over time. Specifically, when the resin material film 5a is formed, the supply of the resin material is controlled. As shown in FIG. 17, there is a calibration curve acquisition step S01, a compensation resin amount setting step S32, an external exhaust gas switching step S03, a vaporization start step S04, a vaporized resin amount accumulation step S35, a film thickness setting step S06, and a resin supply Amount setting step S37, substrate loading step S08, supply start step S09, supply resin amount measurement step S30, supply control step S31, supply stop step S11, substrate carry out step S12, and vaporization stop step S13. In the compensation resin amount setting step S32 shown in FIG. 17, it corresponds to the compensation time setting step S02 in the first embodiment. With respect to the calibration line acquired in the calibration line acquisition step S01, the initial setting The method of compensating for the decrease in the amount of supply of resin material equivalent to the film forming process is to set the compensation resin corresponding to the cumulative amount of supply of resin material to increase the amount of supply of resin material relative to the elapse of the film forming process of 1 piece the amount. The amount of compensation resin is set in such a way as to compensate for the decrease in the film formation rate relative to the target film thickness of the desired film formation. Changes in the amount of compensation resin or film formation rate are memorized in the control section. Simultaneously with the gasification start step S04 shown in FIG. 17, the gasification resin amount accumulation step S35 which is a step corresponding to the gasification duration measurement step S05 shown in FIG. 3 starts to become the basis for calculating the compensation resin amount Accumulation (measurement) of the amount of continuous gasification resin. Then, in the film thickness setting step S06 and the supply resin amount setting step S37 (corresponding to the supply time setting step S07) shown in FIG. 17, it is calculated in advance based on the target film thickness and the amount of continuous gasification resin at the start of film formation The amount of compensation resin. Specifically, the amount of resin to be continuously vaporized corresponding to the gasified resin material is set such that the amount of resin to be supplied in one film formation is gradually increased as the supply time elapses. Then, in the substrate carrying-in step S08 shown in FIG. 3, the substrate S is carried into the resin film forming unit 100. Next, in the supply start step S09 shown in FIG. 3, the control unit 400 switches the opening and closing states of the valve 112V and the valve 113V, and the resin is supplied from the vaporizer 300 to the resin material supply pipe 112 (first pipe) The material begins to form a film. At this time, as a step corresponding to the supply time measurement step S10 shown in FIG. 3, that is, the supply resin amount measurement step S30, the measurement of the supply amount of the resin material converted into the film-forming film thickness is started. In the film formation, as the supply control step S31 shown in FIG. 17, according to the supply resin amount set in the supply resin amount setting step S37, the control unit 400 compensates for the reduction in the film formation rate in a manner corresponding to the gasification The accumulated amount of resin is continued, and the opening degree of the valve 112V is adjusted to gradually increase to perform film formation. Here, the valve 112V is set so that the opening degree can be adjusted. Then, in the supply stop step S11 shown in FIG. 17, the control unit 400 switches the opening and closing states of the valve 112V and the valve 113V, and the resin is supplied from the vaporizer 300 to the resin material bypass tube 113 (second piping) Material, the target film thickness is obtained and the film formation is completed. Then, as the substrate carrying-out step S12 shown in FIG. 17, the film-formed substrate S is carried out from the resin film-forming portion 100. If necessary, repeat from the film thickness setting step S06 to the substrate carrying out step S12 a plurality of times. At this time, the vaporization resin amount accumulation step S35 accumulates the continuous gasification resin amount, and based on this value, the compensation resin amount is recalculated every time in the supply resin amount setting step S37 to control the opening degree of the valve 112V during film formation. Specifically, according to the increase in the amount of resin continuously vaporized by the resin material in the gasifier 300, in order to compensate for the decrease in the amount of resin due to the occurrence of heat curing, etc., the amount of resin supplied is increased with the increase in film formation time To compensate for the reduction in film formation rate. Then, as the gasification stop step S13 shown in FIG. 17, the gasification in the gasifier 300 is stopped, and the measurement of the continuous gasification resin amount is ended. In addition, the film thickness setting step S06 and the supplied resin amount setting step S37 may be carried out before the step carried out after the substrate loading step S08, that is, before the actual film formation step, and the implementation time and order are not limited to the above step order. In addition, even if the gasifier 300 is not continuously operated, the gasification efficiency will be reduced due to the accumulation of the gasification time since the latest clearing. Even if the operation and stop of the gasifier 300 are repeatedly executed, as long as the amount of resin that continues to gasify is accumulated, the reduction in gasification efficiency can still be calculated. As a method of manufacturing the element structure of the present embodiment, as described above, the supply state is controlled so as to compensate for the vaporized resin material that decreases in accordance with the amount of continuous vaporization resin. By this, the film-forming rate of the resin material is stabilized regardless of the amount of continuous gasification of the resin. Furthermore, even in the case where a plurality of substrates S are sequentially formed into a film, the film forming rate of the resin material can be made regardless of the number of films and the amount of continuous gasification resin at the time of film formation since the last clear Are stable. Therefore, it is possible to prevent variations in film forming characteristics, and variations in film characteristics (film thickness) can be prevented. Furthermore, the control of each step can be performed by the control unit 400, and the calculation of the calibration line or the calculation and accumulation of the film-forming resin amount can also be performed by the arithmetic unit of the control unit 400. Furthermore, the memory of the necessary data is also executed by the memory unit of the control unit 400. Hereinafter, a film forming method, a film forming apparatus, a method for manufacturing a device structure, and a device for manufacturing a device structure according to a third embodiment of the present invention will be described based on the drawings. FIG. 18 is a flowchart showing the manufacturing method (film forming method) of the element structure of this embodiment. In this embodiment, the difference from the second embodiment described above is related to the resin supply method for compensating the film forming rate. On the other hand, the components corresponding to the second embodiment described above are denoted by the same symbols and their descriptions are omitted. Specifically, when the resin material film 5a is formed, the supply of the resin material is controlled. As shown in FIG. 18, there is a calibration curve acquisition step S01, a compensation resin amount setting step S32, an external exhaust gas switching step S03, a vaporization start step S04, a vaporized resin amount accumulation step S35, a film thickness setting step S06, and a resin supply Quantity setting step S37, substrate loading step S08, supply starting step S09, supply resin amount measuring step S30, supply stopping step S11, substrate carrying out step S12, and vaporization stopping step S13. In the film formation of the present embodiment, the control unit 400 compensates for the decrease in the film formation rate according to the supply resin amount set in the supply resin amount setting step S37, and corresponds to the cumulative amount of the continuous gasification resin amount. The resin material supply amount from the resin material raw material container 150 of the vaporizer 300 is adjusted to gradually increase to form a film. At this time, the supply amount per unit time of the liquid resin material discharged into the heating portion 152 in the form of mist is controlled. In addition, if necessary, repeat the execution from the film thickness setting step S06 to the substrate unloading step S12 a plurality of times. At this time, the vaporized resin amount accumulating step S35 continues to accumulate the amount of resin. The quantity setting step S37 recalculates the compensation resin quantity and controls the resin material supply quantity from the resin material raw material container 150 during film formation. Specifically, according to the increase in the amount of resin continuously vaporized by the resin material in the gasifier 300, in order to compensate for the decrease in the amount of resin due to the occurrence of heating and curing, the amount of resin supplied is increased with the increase in film formation time To compensate for the reduction in film formation rate. As a method of manufacturing the element structure of the present embodiment, as described above, the amount of resin material supplied to the gasifier 300 is controlled to compensate for the amount of gasified resin material reduced corresponding to the amount of continuous gasification resin. The time increases, thereby making the film formation rate of the resin material stable regardless of the amount of resin that continues to vaporize. Furthermore, even in the case of sequentially forming a plurality of substrates S, the film formation rate of the resin material can be made regardless of the number of film formations and the amount of continuous gasification resin during the film formation since the previous clearing All are stable. Therefore, it is possible to prevent variations in film forming characteristics, and variations in film characteristics (film thickness) can be prevented. INDUSTRIAL APPLICABILITY As a practical example of the present invention, sealing of organic EL devices or sealing of electronic devices can be cited.

2‧‧‧Substrate 2a‧‧‧Front side (1st side) 2b‧‧‧Boundary 2c‧‧‧Back side (2nd side) 3‧‧‧Device layer (functional layer) 3a‧‧‧Front side 3s‧‧‧‧ Side 5‧‧‧Resin film 5a‧‧‧Resin material film 10‧‧‧Element structure 20‧‧‧Element structure 21‧‧‧Substrate 21a‧ Front side 21b‧‧‧Boundary 22b‧‧‧Boundary 30‧‧‧Element structure 32b‧‧‧Boundary part 40‧‧‧Convex part 40a‧‧‧Concave part 41‧‧‧First inorganic material layer (first layer) 41a‧‧‧Front 41s‧‧‧Side 42‧ ‧‧Second inorganic material layer (second layer) 51‧‧‧First resin material 52‧‧‧Second resin material 53‧‧‧First resin material 100‧‧‧Resin film forming section (film forming room) 102 ‧‧‧ stage 102a‧‧‧ substrate cooling device 105‧‧‧ shower plate 107‧‧‧ upper space 108‧‧‧‧ lower space 110‧‧‧ chamber 112‧‧‧resin material supply pipe (first piping) 112V‧‧‧Valve 113‧‧‧Resinous material detour pipe (second piping) 113V‧‧‧Valve 114‧‧‧Exhaust pipe 120‧‧‧Top plate 122‧‧‧UV irradiation device 130‧‧‧Gasification tank 130G ‧‧‧Carrier gas supply pipe 132‧‧‧‧Ejection part 135‧‧‧Heating part 140‧‧‧‧Resin material liquid supply pipe 140V‧‧‧Valve 150‧‧‧Resin material raw material container 150G‧‧‧Pressure gas supply Tube 200‧‧‧Core chamber 201‧‧‧ First layer forming section (film forming chamber) 202‧‧‧Localization processing section 203‧‧‧ Second layer forming section (film forming chamber) 204‧‧‧ Functional layer Forming part (film forming chamber) 210 ‧‧‧ Load interlocking vacuum chamber 300 ‧‧‧ Vaporizer 400 ‧ ‧ ‧ Control part 1000 ‧ ‧ ‧ Element structure manufacturing device G ‧ ‧ ‧ Gap S ‧‧‧ Substrate

FIG. 1 is a schematic diagram showing a device for manufacturing an element structure according to a first embodiment of the present invention. 2 is a schematic cross-sectional view showing a resin film-forming portion in the device for manufacturing an element structure according to the first embodiment of the present invention. FIG. 3 is a flowchart showing the method of manufacturing the element structure according to the first embodiment of the present invention. 4 is a schematic cross-sectional view of an element structure manufactured by the device for manufacturing an element structure according to the first embodiment of the present invention. 5 is a plan view of an element structure manufactured by the device for manufacturing an element structure according to the first embodiment of the present invention. 6 is an enlarged cross-sectional view of the main part of the above-mentioned element structure. 7 is a step diagram showing steps in the method of manufacturing the element structure of the first embodiment of the present invention. FIG. 8 is a step diagram showing steps in the method of manufacturing the element structure according to the first embodiment of the present invention. 9 is a step diagram showing steps in the method of manufacturing the element structure of the first embodiment of the present invention. FIG. 10 is a step diagram showing steps in the method of manufacturing the element structure according to the first embodiment of the present invention. FIG. 11 is a step diagram showing steps in the method of manufacturing the element structure of the first embodiment of the present invention. 12 is a schematic cross-sectional view showing a modified example of the structure of an element structure manufactured by the device for manufacturing an element structure according to the first embodiment of the present invention. 13 is a schematic cross-sectional view showing a modified example of the structure of the element structure manufactured by the element structure manufacturing apparatus of the first embodiment of the present invention. 14 is a schematic cross-sectional view showing a variation of the structure of the element structure manufactured by the device for manufacturing an element structure according to the first embodiment of the present invention. 15 is a graph showing the relationship between the duration of vaporization (supply amount) of a resin material and the film-forming thickness within a fixed processing time. 16 is a graph showing the relationship between the vaporization duration (supply amount) of the resin material and the film-forming thickness added with the compensation time in the method of manufacturing the element structure according to the first embodiment of the present invention. 17 is a flowchart showing a method of manufacturing an element structure according to a second embodiment of the present invention. 18 is a flowchart showing a method of manufacturing an element structure according to a third embodiment of the present invention.

100‧‧‧Resin film forming section (film forming room)

102‧‧‧ stage

102a‧‧‧Substrate cooling device

105‧‧‧ shower plate

107‧‧‧Upper space

108‧‧‧ Lower space

110‧‧‧ chamber

112‧‧‧Resin material supply pipe (first piping)

112V‧‧‧Valve

113‧‧‧Circuit of resin material (second piping)

113V‧‧‧Valve

114‧‧‧Exhaust pipe

120‧‧‧Top board

122‧‧‧UV irradiation device

130‧‧‧gasification tank

130G‧‧‧Carrier gas supply pipe

132‧‧‧Ejection Department

135‧‧‧Heating Department

140‧‧‧Resin material liquid supply pipe

140V‧‧‧valve

150‧‧‧Resin material container

150G‧‧‧Pressure gas supply pipe

300‧‧‧gasifier

400‧‧‧Control Department

S‧‧‧Substrate

Claims (11)

A film-forming method in which a liquid resin material is sprayed into a heating portion to vaporize it, and the vaporized vapor is supplied to a substrate to form a resin material film; and the compensation corresponds to the The sum of the amount of the resin material supplied to the heating portion, that is, the cumulative amount of vaporization reduces the vaporization rate of the resin material so that the film forming conditions are controlled, and the film forming conditions include forming the resin material for each of the substrates At least one of the film formation time or the supply amount per unit time of the liquid resin material sprayed to the heating portion in the form of a mist. The film forming method according to claim 1, wherein the heating portion has an inclined surface. The film-forming method according to claim 1, wherein the above-mentioned resin material is a material of ultraviolet-curable acrylic resin. A film forming device that sprays liquid resin material in a mist form to a heating portion to vaporize it, and supplies the vaporized vapor to a substrate to form a resin material film; and has: a recording portion, The record contains the gasification operation data of the cumulative amount of the resin material supplied to the heating section; and the control section, referring to the gasification operation data, decides whether to extend the film formation time or make the heating section misty At least one of the increase amount of the supply amount per unit time of the above-mentioned liquid resin material ejected increases. A method for manufacturing an element structure includes: a first step, which is to form a first layer, the first layer covering a functional layer disposed on one side of a substrate, and having local convex portions, including an inorganic material; a second step , Which is to cover the first layer on one side of the substrate, the liquid resin material is supplied in a vaporized form to form a resin material film containing the above resin material; the third step is from the side section Observing the first layer, leaving a part of the resin material film at a position including a boundary portion between the outer side surface of the convex portion and one surface of the substrate, and leaving the part at a position different from the position where the resin material film remains The resin material film is removed; and the fourth step is to form a second layer containing an inorganic material in such a manner as to cover a part of the remaining resin material film and the first layer exposed by the removal of the resin material film And in the second step, the supply state is controlled in a manner to compensate for the reduction of the resin material corresponding to the gasification duration of the gasified resin material. The method of manufacturing an element structure according to claim 5, wherein in the second step, the film formation of the resin material film is extended corresponding to the supply amount of the resin material corresponding to the supply time of the vaporized resin material time. The method of manufacturing an element structure according to claim 6, wherein in the film forming process of the resin material film in the second step, the vaporized resin material is supplied to the inside of the film forming chamber, and the resin material During the non-film forming process of the film, the vaporized resin material is sent to the outside of the film forming chamber; and A cumulative amount obtained by accumulating the supply amount of the resin material as the vaporization amount of the resin material is obtained, and the film forming time of the resin material film is controlled based on the cumulative amount. The method for manufacturing an element structure according to any one of claims 5 to 7, wherein the third step is to observe the first layer from a side cross-section, so that the area including the top of the outer surface of the convex portion is exposed The above resin material film is removed. The method for manufacturing an element structure according to any one of claims 5 to 7, wherein the third step is to use a dry etching method as a method for removing the resin material film. The method for manufacturing an element structure according to claim 9, wherein the third step is to detect a change in specific conditions among the conditions for etching the resin material film, and use the detected detection result as the etching process end. A device for manufacturing an element structure includes: a first layer forming portion that forms a first layer that covers a functional layer disposed on one side of a substrate and has a local convex portion that includes an inorganic material; a resin The film forming part can supply the vaporized resin material from a vaporizer that heats and liquefies the liquid resin material to form a resin material film covering the first layer and containing the resin material; localization The chemical treatment part is to observe the first layer from a side cross-section, leaving a part of the resin material film positioned at a boundary portion including the outer side of the convex part and a surface of the substrate, and locating and remaining the resin The resin material film at different positions of the material film Removal; and a second layer forming portion formed by covering the convex portion located on one side of the substrate, a portion of the remaining resin material film, and the first layer exposed by the removal The second layer of the material; and further comprising: a supply pipe connected to the gasification tank provided in the gasifier, and supplying the gasified resin material to the resin film-forming portion during film formation; an external pipe connected In the gasification tank, the gasified resin material is sent to the outside of the resin film-forming part during the non-film forming process; and a switching valve that switches the supply tube and the external tube; and has a control part, It controls the supply time of supplying the resin material to the resin film-forming portion in such a manner as to compensate for the resin material that decreases corresponding to the duration of vaporization.

Images