TW201835173A - Film formation method, film formation apparatus, method of manufacturing element structure, and element structure manufacturing apparatus - Google Patents

Abstract

The present invention provides a film formation method of spraying a liquid resin material into a heater causing the liquid resin material to vaporize, supplying the vapor to a substrate to form a resin material film. In the film formation method, conditions for film formation are controlled so as to compensate a vaporization rate of the resin material decreasing in accordance with vaporization integrated quantity representing a total amount of supplying the resin material to the heater.

Description

Film forming method, film forming device, device structure manufacturing method, and device structure manufacturing device

The present invention relates to a film forming method, a film forming device, a method for manufacturing a component structure, and a device for manufacturing a component structure, and more particularly, to a component for manufacturing a laminated structure having a protection device and the like from being affected by oxygen and moisture Better technology for structures.

As an element including a compound having a property that is easily deteriorated by moisture, oxygen, or the like, an organic EL (Electro Luminescence) element or the like is known. With regard to such a device, attempts have been made to suppress the intrusion of moisture and the like into the device by forming a laminated structure composed of a layer containing a compound and a protective layer covering the layer. For example, Japanese Patent Laid-Open No. 2013-73880 discloses a light-emitting element having a protective film composed of a laminated film of an inorganic film and an organic film on an upper electrode layer. As the organic film, an acrylic resin or the like can be used. As a method for forming an organic film, a method is being studied in which a resin material is supplied in a vaporized form, the resin material is liquefied on a substrate, and the resin material is irradiated with UV (ultraviolet) light to the resin material. Polymerize to form a resin film. However, when the resin material is vaporized, there is a case where the resin material does not completely evaporate in the vaporizer but the resin material liquid remains in the heating portion, or the resin material solidifies due to heating. Therefore, there is a problem that the gasification efficiency deteriorates with time, and even if the amount of the resin material supplied to the gasifier is fixed, the amount of vapor supplied from the gasifier to the film forming chamber gradually decreases, thereby accumulating The rate (film formation rate) gradually deteriorates. In particular, there is a problem that if the processing time becomes longer, the film state becomes unstable due to the decrease in gasification efficiency. In addition, there is a possibility that a sufficient film formation cannot be performed because a sufficient resin material vapor is not supplied to the film forming apparatus. In this case, there is a problem that when unevenness is formed on the surface of the substrate having the device layer, the unevenness cannot be sufficiently covered, for example, there is a possibility that a defective coating may occur at a boundary portion of the unevenness. Once the coating failure of such an inorganic film occurs, it is impossible to prevent moisture from penetrating from the place where the coating failure occurs, and it is difficult to ensure sufficient barrier properties.

The present invention has been made in view of the above circumstances, and it is intended to achieve at least one of the following objects. 1. To improve the supply state of resin material vapor. 2. Prevent film formation failure caused by lower supply. 3. Realize the stabilization of film formation rate. 4. To ensure the barrier properties. The film forming method according to the first aspect of the present invention is a method in which a liquid resin material is sprayed into a heating portion in a mist state to vaporize, and a vaporized vapor is supplied to a substrate to form a resin material film; and The film forming conditions are controlled so as to compensate for a decrease in the vaporization rate of the resin material corresponding to the total amount of the resin material supplied to the heating section, that is, the cumulative amount of vaporization. In the film-forming method of the first aspect of the present invention, the film-forming conditions may include a film-forming time for filming the resin material film on each of the substrates, or spraying liquid in a mist state to the heating portion. At least any one of the supply amount of the resin material per unit time. In the film formation method according to the first aspect of the present invention, the heating section may have an inclined surface. In the film forming method according to the first aspect of the present invention, the resin material may be a material of a UV-curable acrylic resin. The film forming apparatus of the second aspect of the present invention is a person who sprays a liquid resin material in a mist state to a heating portion to vaporize it, and supplies the vaporized vapor to a substrate to form a resin material film; and It has a recording unit that records gasification operation data including a cumulative amount of the resin material supplied to the heating unit, and a control unit that refers to the gasification operation data to determine a time for extending the film formation time, or The heating portion sprays at least any one of the increase amount of the supply amount of the liquid resin material per unit time in a mist state. The manufacturing method of the third aspect of the present invention includes a first step (step A), which is to form a first layer, the first layer covers a functional layer disposed on one side of the substrate, and has a local convexity. The second step (step B) is to supply the liquid resin material in a vaporized form so as to cover the first layer on one side (one main side) of the substrate. Forming a resin material film containing the resin material; and the third step (step C) is to observe the first layer from a side section so that the above-mentioned portion is located at a position including a boundary portion between the outer surface of the convex portion and one surface of the substrate A part of the resin material film remains, and the resin material film is removed at a position different from the position where the resin material film remains; and the fourth step (step D) is to cover a part of the remaining resin material film And forming the second layer containing the inorganic material by the above-mentioned first layer exposed by the removal of the resin material film; and in the above-mentioned second step, the gas corresponding to the gasification of the resin material is compensated The resin material of the embodiment to reduce the duration of the supply state control. In the manufacturing method of the element structure of the third aspect of the present invention, the supply amount of the resin material corresponding to the supply time of the gasified resin material in the second step may be extended, Film formation time of the resin material film. In the manufacturing method of the element structure of the third aspect of the present invention, during the film forming treatment of the resin material film in the second step, the vaporized resin material is supplied to the film forming chamber. Inside, and during the non-film forming treatment of the resin material film, the vaporized resin material is sent to the outside of the film forming chamber; and the supply amount of the resin material is obtained as the gasification amount of the resin material to be accumulated The obtained cumulative amount controls the film forming time of the resin material film according to the cumulative amount. In the manufacturing method of the element structure of the third aspect of the present invention, the third step may be a method in which the first layer is viewed from a side section, and a region including the top portion on the outer side surface of the convex portion is exposed. The resin material film is removed. In the manufacturing method of the element structure of the third aspect of the present invention, a dry etching method may be used as the method for removing the resin material film in the third step. It is also possible to detect a change in a specific condition among the conditions for performing the etching treatment on the resin material film for the third step, and use the detected detection result as an end point of the etching treatment. The device manufacturing device of the fourth aspect of the present invention includes a first layer forming portion that forms a first layer, the first layer covering a functional layer disposed on one surface side of the substrate and having a local convex portion, Contains inorganic materials; a resin film-forming portion that can supply the vaporized resin material from a vaporizer that heats the liquid resin material to vaporize, and forms a resin that covers the first layer and includes the resin material Material film; a localization treatment section, which observes the first layer from a side cross section, leaving a part of the resin material film at a position including a boundary portion between the outer surface of the convex portion and one surface of the substrate, and Removing the resin material film at a position different from the position where the resin material film remains; and a second layer forming portion that covers the convex portion located on one side of the substrate, a portion of the remaining resin material film, And forming the second layer containing an inorganic material by the above-mentioned first layer exposed by the removal; and provided with: a supply pipe connected to the above-mentioned gasifier The gasification tank supplies the gasified resin material to the resin film forming part during film formation; the outer tube is connected to the gasification tank, and sends the gasified resin material to the above during non-film-forming treatment. The outside of the resin film forming section; and a switching valve that switches the supply pipe and the external pipe; and has a control section that controls the control of the resin material in a manner that compensates for the reduction of the resin material corresponding to the duration of vaporization. The supply time of the resin film forming part to supply the resin material. According to the film forming method of the first aspect of the present invention, the resin material can be compensated for the reduction of the gasification duration of the resin material vaporized, and the resin material can be supplied regardless of the film formation time. The amount is stabilized to compensate, and the film formation rate is fixed corresponding to the case where the amount of gasification is reduced, so that film formation characteristics such as uniformity of film thickness can be brought into a desired state. In the film-forming method of the first aspect of the present invention, the film-forming conditions include a film-forming time for filming the resin material film on each of the substrates, or spraying a liquid resin material as a mist on the heating portion. At least any one of the supply amount per unit time. Therefore, by extending the film formation time or gradually increasing the supply amount per unit time of the resin material sprayed in a liquid state to the heating portion in a mist form, uniformization of the film formation rate can be achieved. In the film-forming method according to the first aspect of the present invention, the heating section has an inclined surface, thereby reducing the ratio of the supply amount of the resin material corresponding to the cumulative amount of vaporization. In the film-forming method according to the first aspect of the present invention, the resin material may be a material of an ultraviolet curing acrylic resin. According to a second aspect of the present invention, the film forming apparatus may include a recording unit that records gasification operation data including a cumulative amount of the resin material supplied to the heating unit, and a control unit that references the gasification operation data, It is determined at least any one of a time for extending the film formation time or an increase in the amount of supply per unit time of spraying the liquid resin material to the heating portion in a mist form. According to the manufacturing method of the element structure of the third aspect of the present invention, in the above-mentioned second step, the supply state is controlled in such a manner as to compensate the resin material that is reduced corresponding to the gasification duration of the resin material that is vaporized, With this, the supply amount of the resin material can be stabilized regardless of the film formation time, and even when a plurality of substrates are sequentially formed into a film, the supply amount of the resin material can be made regardless of the film formation order and film formation. It is stable over time, which prevents variations in the film formation rate. In addition, it is possible to stabilize the film formation rate to form a resin material film having desired film characteristics, and by using the localized resin material film (resin material), it is possible to reliably use the localized resin material film (resin material). The functional layer is sealed, so that a device structure with high barrier properties can be manufactured. In the manufacturing method of the element structure of the third aspect of the present invention, in the second step, the resin material film is extended according to the supply amount of the resin material corresponding to the supply time of the vaporized resin material. The film forming time can be easily compensated for the above-mentioned resin material which is reduced in accordance with the processing time, thereby achieving stabilization of the film forming rate and preventing changes in film characteristics. In the manufacturing method of the element structure of the third aspect of the present invention, during the film forming process of the resin material film in the second step, the vaporized resin material is supplied, and during the non-film forming process, The vaporized resin material is sent to the outside of the film forming chamber. A cumulative amount obtained by accumulating the supply amount of the resin material as the vaporization amount of the resin material, and controlling the film forming time of the resin material film according to the cumulative amount, thereby performing the film formation of a plurality of sheets, The film thickness can be controlled regardless of the film formation sequence and the elapse of the film formation time. In the third aspect of the method for manufacturing an element structure of the present invention, the third step is to observe the first layer from a side cross-section, and to expose a region including a top portion on an outer side surface of the convex portion. The resin material film is removed. Thereby, the localized resin material film (resin material) can be easily used to surely seal the functional layer including the first layer and the second layer, so that the first layer can be sealed without unnecessary damage. The unnecessary part of the resin material film (resin material) is removed, and only the part to be sealed is localized. Thereby, a device structure having a high barrier property can be manufactured. In the manufacturing method of the element structure of the third aspect of the present invention, the third step uses the dry etching method as a method for removing the resin material film, so that the resin can be removed without causing unnecessary damage to the first layer. The unnecessary part of the material film is removed, and only the part to be sealed is localized. In the third step, a change in a specific condition among the conditions for performing the etching treatment on the resin material film is detected and used as an end point of the etching treatment, so that the resin material film can be reliably removed, and Can reduce unnecessary damage to the first layer. According to the manufacturing apparatus of the element structure of the fourth aspect of the present invention, the supply amount of the resin material can be stabilized regardless of the film formation time, and even when a plurality of substrates are sequentially film-formed, The supply amount of the resin material can be stabilized regardless of the film formation sequence and film formation time, thereby preventing a change in the film formation rate. In addition, the film formation rate can be stabilized to form a resin material film having desired film characteristics, and the localized resin material film can be used to reliably seal the functional layer including the first layer and the second layer. Therefore, a device structure with higher barrier properties can be manufactured. Effects of the Invention According to aspects of the present invention, the following effects can be achieved: stabilization of the supply state of the resin material, prevention of film formation failure caused by fluctuations in the supply amount, stabilization of the film formation rate, and stable film formation Resin material film.

Hereinafter, a film forming method, a film forming apparatus, a method for manufacturing a device structure, and a device for manufacturing a device structure according to a first embodiment of the present invention will be described based on drawings. FIG. 1 is a schematic diagram showing a device (film-forming device) for manufacturing a device structure according to this embodiment. FIG. 2 is a schematic diagram showing a device manufacturing apparatus for the element structure according to this embodiment. FIG. 3 is a flowchart showing a method of manufacturing the element structure according to this embodiment. In FIG. 1, reference numeral 1000 denotes a device for manufacturing the element structure. As described below, the device structure manufacturing device 1000 of this embodiment manufactures an element structure such as an organic EL element. As shown in FIG. 1, the manufacturing apparatus 1000 includes a first layer forming section 201, a resin film forming section 100, a localization processing section 202, a second layer forming section 203, and a functional layer forming section that forms a functional layer that becomes an organic EL layer. 204. The core chamber 200 and a loading interlocking vacuum chamber 210 connected to the outside. The core chamber 200 is connected to the first layer forming portion 201, the resin film forming portion 100, the localization processing portion 202, the second layer forming portion 203, the functional layer forming portion 204, and the load-locking vacuum chamber 210. The inside of the load-locking vacuum chamber 210 is a substrate for inserting the manufacturing apparatus 1000 that is transported to the element structure from another device or the like. In the core room 200, for example, a substrate transfer robot (not shown) is disposed. Thereby, each of the core chamber 200 and the first layer forming portion 201, the resin film forming portion 100, the localization processing portion 202, the second layer forming portion 203, the functional layer forming portion 204, and the loading interlocking vacuum chamber 210 can be performed. The substrate is transferred between them. The substrate can be transferred outside the manufacturing apparatus 1000 of the element structure through the loading interlocking vacuum chamber 210. The core chamber 200, each of the film forming chambers 100, 201, 202, 203, and 204, and the loading interlocking vacuum chamber 210 respectively constitute a vacuum chamber connected to a vacuum exhaust system (not shown). The manufacturing of the element structure 10 by using the manufacturing device 1000 having the above-mentioned element structure can automate each manufacturing step, and can simultaneously manufacture efficiently using a plurality of film forming chambers, thereby improving productivity. The first layer forming portion 201 forms a first layer 41 in the element structure 10 described below. The first layer 41 covers the functional layer 3 disposed on one surface side 2a of the substrate 2 and has local convex portions including nitride. Silicon (SiN _x ) And other inorganic materials. The first layer forming portion 201 is a film forming chamber for forming the first layer 41 by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, or an ALD (Atomic Layer Deposition) method. . The functional layer forming section 204 forms a functional layer 3 in the element structure 10 described below. In addition, the functional layer forming portion 204 may be provided outside the loading interlocking vacuum chamber 210. The second layer forming portion 203 forms a film forming chamber of the second layer 42 in the element structure 10 described below by covering the first layer 41 and the resin material 51. The second layer 42 is the same as the first layer 41 Ground contains inorganic materials. Furthermore, when the second layer 42 and the first layer 41 contain the same material, the second layer forming portion 203 and the first layer forming portion 201 may be set to the same configuration, or a film forming chamber ( The common film-forming chamber) forms a second layer 42 and a first layer 41. Furthermore, when either the second layer forming portion 203 and the first layer forming portion 201 or the common film forming chamber is constituted by a plasma CVD apparatus, the forming portion 201, 203, or the film forming chamber is not only With the above-mentioned functions, the functions of the localization processing unit 202 described below may be combined. For example, the substrate on which the resin film is formed is carried into a plasma CVD apparatus, and an oxidizing gas is introduced to generate a plasma, whereby the resin film can be etched to localize the resin film to form a resin material. Thereafter, the second layer 42 can also be formed directly in the plasma CVD apparatus. The resin film forming portion 100 is a film forming chamber, that is, a vaporized resin material is supplied to the inside of the resin film forming portion 100, a resin material film containing a resin material is formed on the first layer 41, and the resin material film is hardened to A resin film is formed. As shown in FIG. 2, the resin film forming section 100 includes a chamber 110 capable of reducing the pressure in an internal space, a gasifier 300 for supplying a vaporized resin material to the chamber 110 (processing chamber), and a control section 400. As described below, the internal space of the chamber 110 is composed of an upper space 107 and a lower space 108. A vacuum exhaust device (vacuum exhaust device, vacuum pump, etc.) (not shown) is connected to the chamber 110. The vacuum exhaust device is capable of exhausting the gas in the internal space so that the internal space of the chamber 110 becomes a vacuum environment. Way composition. As shown in FIG. 2, a shower plate 105 is arranged in the internal space of the chamber 110, and a space on the upper side of the shower plate 105 in the chamber 110 constitutes an upper space 107. A top plate 120 including a member capable of transmitting ultraviolet light such as quartz is provided on the uppermost part of the chamber 110, and an ultraviolet light irradiation device 122 (UV irradiation device) is arranged on the upper side of the top plate 120. Here, the shower plate 105 is also formed of a member capable of transmitting ultraviolet light, whereby the ultraviolet light energy introduced from the irradiation device 122 through the top plate 120 to the upper space 107 passes through the shower plate 105 toward the shower plate 105. The lower side lower space 108 travels. Thereby, the acrylic material film (resin material film) formed on the substrate S described below can be irradiated with ultraviolet light after film formation, and the acrylic material film can be hardened to form an acrylic resin film (resin film). A heating device (not shown) is arranged in the chamber 110. The temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 can be set to be equal to or higher than the vaporization temperature of the resin material, preferably about 40 to 250 ° C, and is controlled by a heating device. A stage 102 (substrate holding portion) on which the substrate S is placed is disposed in the lower space 108 located below the shower plate 105 in the chamber 110. On the stage 102, a position where a substrate is to be arranged is set in advance on the surface. The stage 102 is disposed in the chamber 110 with the surface exposed. The symbol S indicates a substrate disposed at a specific position on the surface of the substrate stage 102. A substrate cooling device 102 a for cooling the substrate S is provided on the stage 102. The substrate cooling device 102 a supplies a refrigerant to the inside of the stage 102 and cools the substrate S on the upper surface of the stage 102. Specifically, the temperature of the substrate S is controlled by a cooling device 102a built into the stage 102 (substrate holding portion) on which the substrate S is placed, and is controlled below the vaporization temperature of the resin material, preferably below zero (0 ° C). For example, about -30 ℃ ~ 0 ℃. A shower plate 105 is provided at a position on the upper side of the stage 102 so as to face the entire surface of the stage 102. The shower plate 105 is composed of a plate-shaped member provided with a plurality of through holes. The plate-shaped member includes an ultraviolet transmitting material such as quartz. The shower plate 105 divides the internal space of the chamber 110 into an upper space and a lower space. A mask (not shown) is provided in the lower space 108, and the position of the mask can be set to a specific position during film formation. As the substrate moves, the mask can move in a manner that retracts from the substrate. The upper space 107 of the chamber 110 communicates with the vaporizer 300 via a pipe 112 (resin material supply pipe) and a valve 112V. The vaporized resin material can be supplied to the upper space 107 of the chamber 110 through the resin material supply pipe 112. One end of the resin material bypass pipe 113 having the valve 113V is connected to the resin material supply pipe 112 (first pipe) closer to the gasifier 300 than the valve 112V. The other end of the resin material bypass pipe 113 (second piping) is connected to the outside through the exhaust pipe 114, and the gas can be discharged through the resin material bypass pipe 113. The exhaust pipe 114 is connected to a liquefaction recovery device, and can liquefy and recover the resin material. The opening and closing driving of the valves 112V and 113V is controlled by the control unit 400. The control unit 400 is controlled in a manner capable of switching between a film-forming state and a non-film-forming state. The film-forming state refers to supplying the gasified resin material from the gasifier 300 into the chamber 110; The film formation state is directed to the outside to exhaust the gasified resin material from the gasifier 300 without supplying it to the chamber 110. The valve 112V, the valve 113V, and the control unit 400 constitute a switching unit having a resin material supplied to the inside of the chamber 110 through the resin material supply pipe 112 or a resin material discharge to the outside of the chamber 110 through the resin material bypass pipe 113. Qi selection function. The gasifier 300 can supply a gasified resin material to the chamber 110. As shown in FIG. 2, the gasifier 300 includes a gasification tank 130, a discharge portion 132, and a resin material raw material container 150. As shown in FIG. 2, the gasification tank 130 includes an internal space for vaporizing a liquid resin material, and a spray portion 132 for spraying the liquid resin material in a mist state is arranged above the internal space. The gasification tank 130 is formed in a substantially cylindrical shape, but may be set to another cross-sectional shape. The inner surface of the gasification tank 130 may include, for example, SUS, Al, and the like. One end of a resin material liquid supply pipe 140 connected to the resin material raw material container 150 via a valve 140V and a carrier gas supply pipe 130G that supplies a carrier gas such as nitrogen are connected to the ejection section 132. The other end of the resin material liquid supply pipe 140 is connected to the resin material raw material container 150 and is located inside the liquid resin material stored in the resin material raw material container 150. The resin material raw material container 150 is connected to a pressurized gas supply pipe 150G for supplying a material liquid such as nitrogen, and the liquid material can be conveyed to the resin material liquid supply pipe 140 so as to increase the internal pressure of the resin material raw material container 150 to be pressurized Resin material. The ejection portion 132 is configured to eject the liquid resin material supplied from the resin material liquid supply pipe 140 into the internal space of the vaporization tank 130 in a mist state together with a carrier gas. The ejection portion 132 is provided at a substantially central position on the top of the gasification tank 130. A heating portion 135 having an inclined surface may be provided in the internal space of the gasification tank 130, and the heating material may be sprayed with a resin material in a mist form. A vacuum gauge PG is provided in the gasification tank 130 so that the internal pressure can be measured. In addition, a temperature control device for controlling the temperature of the surface in contact with the internal space is provided on the side wall of the gasification tank 130. Specifically, a heater for heating the side wall of the gasification tank 130 is provided. The resin material supply pipe 112 (first pipe) connected to the gasification tank 130 is also provided with a heater as the same temperature adjustment device. This heater is wound around a resin material supply pipe (first pipe) so that the vaporized resin material does not condense on the wall surface. Furthermore, a heater may be provided in the resin material bypass pipe 113 as the same temperature adjustment device. These heaters can set the temperature exposed on the surface of the vaporized resin material to a state higher than the vaporization temperature of the resin material, thereby preventing the resin material from liquefying. At the same time, the temperature is set in a manner that minimizes the heat curing of the resin material. When the vaporizer 300 vaporizes the resin material, the vaporization tank 130 and the resin material supply pipe 112 (first pipe) are heated by a heater. At the same time, the control unit 400 causes the valve 112V to be in a closed state so that gas cannot flow into the resin material supply pipe 112, and the valve 113V is opened to form a state in which gas can flow into the resin material bypass pipe 113. In this state, the internal pressure of the resin material raw material container 150 is raised, and the liquid resin material supplied from the resin material liquid supply pipe 140 is sprayed together with the carrier gas from the ejection portion 132 to the inside of the vaporization tank 130. Space spurted. In this case, the resin material and the carrier gas supplied to the ejection section 132 may be further heated. The resin material sprayed from the spraying portion 132 into the internal space of the gasification tank 130 in a mist state together with the carrier gas is vaporized inside the heated gasification tank 130. In addition, in this embodiment, there may be a case where an ultraviolet curable resin material is used as the resin material. The ultraviolet-curable resin material may be partially polymerized or deteriorated by heating or the like. After such a change, there is a possibility that the evaporation temperature rises, and the resin does not evaporate and remains on the surface of the heating unit 135 or the gasification tank 130, so that the evaporation amount changes. While the gasification of the resin material is stably performed, the control unit 400 causes the valve 112V to be opened, thereby forming a state in which gas can flow into the resin material supply pipe 112, and the valve 113V is closed, thereby preventing gas formation. It flows into the state of the resin material bypass pipe 113. Thereby, the vaporized resin material can be supplied to the chamber 110 and a film formation process can be performed. Driven by the switching unit, that is, only by switching the opening and closing states of the valve 112V and the valve 113V by the control unit 400, it is possible to select to supply the resin material to the resin material supply pipe 112 (the first pipe) and to bypass the resin material. The pipe 113 (second pipe) supplies a resin material. Therefore, the supply amount of the vaporized resin material supplied to the chamber 110 can be stabilized, so that the film formation rate at the start of film formation can be stabilized. The resin film-forming portion 100 is formed, for example, so that film formation and ultraviolet irradiation can be performed in the same chamber 110. The film-forming portion is formed of a UV-curable acrylic resin material at a vaporization temperature of about 40 to 250 ° C. Film; the above ultraviolet irradiation is used to harden the resin material after film formation. Thereby, any processing step can be performed with the same apparatus configuration, and productivity can be improved. In the resin film-forming portion 100, as step B in the method of manufacturing the element structure (film-forming method) according to this embodiment, the supply of the resin material is controlled when the following liquid resin material film 5a is formed. As shown in FIG. 3, step B includes a calibration curve acquisition step S01, a compensation time setting step S02, an external exhaust switching step S03, a gasification start step S04, a gasification duration measurement step S05, a film thickness setting step S06, and a supply The time setting step S07, the substrate carrying-in step S08, the supply start step S09, the supply time measuring step S10, the supply stopping step S11, the substrate carrying out step S12, and the vaporization stopping step S13. In the calibration line acquisition step S01 shown in FIG. 3, the film thickness is measured for each substrate with a fixed film forming time as shown in FIG. 15 with respect to the supply amount of the gasified resin material from the gasifier 300. . At this time, in a state where the supply amount of the resin material from the resin material raw material container 150 is fixed and stably supplied, a plurality of substrates S are sequentially formed into a film with the same film forming processing time, and each measurement is performed. The decrease in film thickness (reduction) is used as the calibration curve. As shown in FIG. 15, with respect to the cumulative supply amount to the gasifier 300 (the cumulative resin material supply amount (g) of the gasifier), that is, as the gasification duration elapses, the film thickness of each substrate (= Film rate). In response to this decrease, a straight line is drawn as a calibration line in the figure. In the compensation time setting step S02 shown in FIG. 3, the method corresponding to the calibration line obtained in the calibration line acquisition step S01 in order to compensate for the decrease with respect to the initially set film formation processing time corresponds to Set the compensation time to increase the film-forming processing time per sheet by accumulating the supply of resin material. The compensation time is set in such a manner as to compensate for a decrease in the film formation rate with respect to a target film thickness to be formed. Changes in the compensation time or film formation rate are stored in the control unit. Next, in the external exhaust gas switching step S03 shown in FIG. 3, the opening and closing states of the valve 112V and the valve 113V are switched by the control unit 400, and the resin material bypass pipe 113 (second pipe) is switched by the self-gasifier 300 Supply resin material. In the gasification start step S04 shown in FIG. 3, in this state, as described above, the gasification of the resin material is started in the gasifier 300. At the same time, as the gasification duration measurement step S05 shown in FIG. 3, the measurement of the gasification duration that becomes the reference for calculating the compensation time is started. Next, in the film thickness setting step S06 and the supply time setting step S07 shown in FIG. 3, the compensation time is calculated in advance based on the target film thickness and the duration of vaporization at the start of film formation. Specifically, it is set so as to extend the film forming time, ie, the supply time, corresponding to the gasification duration of the gasified resin material. Then, in the substrate carrying-in step S08 shown in FIG. 3, the substrate S is carried into the resin film forming section 100. Then, in the supply start step S09 shown in FIG. 3, the control unit 400 switches the opening and closing states of the valve 112V and the valve 113V, and the resinizer 300 supplies the resin to the resin material supply pipe 112 (the first pipe). The material begins to form a film. At the same time, as the supply time measurement step S10 shown in FIG. 3, the measurement of the supply amount of the resin material converted into the film thickness of the film is started. Then, in the supply stop step S11 shown in FIG. 3, the control unit 400 switches the opening and closing states of the valve 112V and the valve 113V according to the supply time set in the supply time setting step S07, and the self-gasifier 300 The resin material bypass pipe 113 (second pipe) supplies a resin material, obtains a target film thickness, and finishes film formation. Then, as the substrate carrying-out step S12 shown in FIG. 3, the film-formed substrate S is carried out from the resin film forming section 100. If necessary, the steps from the film thickness setting step S06 to the substrate carrying-out step S12 are repeatedly performed a plurality of times. At this time, the gasification duration measured in the gasification duration measurement step S05 is accumulated, and based on the value, the compensation time is recalculated each time in the supply time setting step S07 to control the switching time in the supply stop step S11. Specifically, according to an increase in the gasification duration of the resin material in the gasifier 300, in order to compensate the amount of the resin material reduced due to the occurrence of heat curing, etc., the film forming time is extended by compensating the supply time, that is, the supply time. Way to set. Then, as the gasification stop step S13 shown in FIG. 3, the gasification in the gasifier 300 is stopped, and the measurement of the gasification duration is terminated. In addition, the film thickness setting step S06 and the supply time setting step S07 are only required to be performed after the substrate carrying-in step S08, that is, before the film formation step is actually performed, and the implementation time and sequence are not limited to the above-mentioned sequence of steps. In addition, even if the gasifier 300 is discontinuously operated, the gasification efficiency is reduced due to the accumulation of the gasification time since the recent zeroing. Even if the operation and stop of the gasifier 300 are repeatedly performed, as long as the gasification time is accumulated, the reduction amount of the gasification efficiency can still be calculated. As a method of manufacturing the element structure of the present embodiment, as described above, the supply state is controlled so as to compensate the supply of the gasified resin material that decreases in accordance with the processing time. Thereby, the film forming rate of the resin material is stabilized regardless of the elapse of the gasification duration, and as shown in FIG. 16, even when a plurality of substrates S are sequentially film-formed, the resin material can be made The film formation rate is stable regardless of the number of film formation times and film formation time. Therefore, it is possible to prevent variations in film formation characteristics, and to prevent variations in film characteristics (film thickness). In addition, the control of each step can be performed by the control unit 400, and the calculation of the calibration curve or the calculation and accumulation of the film formation time can also be performed by the operation unit of the control unit 400. Furthermore, the memory of the necessary data is also executed by the memory section of the control section 400. Hereinafter, the element structure 10 manufactured by the device structure manufacturing apparatus 1000 of this embodiment is demonstrated. FIG. 4 is a schematic cross-sectional view showing an element structure according to this embodiment. FIG. 5 is a plan view showing the element structure of FIG. 4. FIG. 6 is an enlarged view showing a main part of the element structure. In each figure, the X-axis, Y-axis, and Z-axis directions indicate three-axis directions orthogonal to each other. In this embodiment, the X-axis and Y-axis directions indicate horizontal directions that are orthogonal to each other, and the Z-axis direction indicates a vertical direction. The element structure 10 of this embodiment includes a substrate 2 including a device layer 3 (functional layer), and a first inorganic material layer 41 (first layer), which is formed on the front surface 2a of the substrate 2 and covers the functional layer 3, and Local bumps, including silicon nitride (SiN _x ) And other inorganic materials; and a second inorganic material layer 42 (third layer), which covers the first inorganic material layer 41 and is the same as the first layer 41. In this embodiment, the element structure 10 is composed of a light-emitting element having an organic EL light-emitting layer. The substrate 2 has a front surface 2a (first surface) and a rear surface 2c (second surface), and is made of, for example, a glass substrate, a plastic substrate, or the like. The shape of the substrate 2 is not particularly limited, and in this embodiment, it is formed in a rectangular shape. The size, thickness, and the like of the substrate 2 are not particularly limited, and a substrate having a suitable size and thickness can be used in accordance with the size of the element size. In this embodiment, a plurality of element structure bodies 10 are produced from an assembly of the same elements produced on a large substrate S. The device layer 3 (functional layer) is composed of an organic EL light-emitting layer including an upper electrode and a lower electrode. In addition to such a configuration, the device layer 3 may be composed of various functional elements such as a liquid crystal layer in a liquid crystal element, a power generation layer in a power generation element, or the like, which include materials that are easily deteriorated by moisture, oxygen, and the like. The device layer 3 is formed on a specific region of the front surface 2 a of the substrate 2. The planar shape of the device layer 3 is not particularly limited. In this embodiment, it is formed into a substantially rectangular shape. However, in addition to this shape, a circular shape, a linear shape, or the like may be used. The device layer 3 is not limited to the example of being disposed on the front surface 2 a of the substrate 2, and may be disposed on at least one of the front surface 2 a and the back surface 2 c of the substrate 2. The first inorganic material layer 41 (first layer) is provided on the surface 2a of the substrate 2 on which the device layer 3 is disposed, and constitutes a convex portion covering the front surface 3a and the side surface 3s of the device layer 3. The first inorganic material layer 41 has a three-dimensional structure protruding from the front surface 2 a of the substrate 2 to the upper side in FIG. 6. The first inorganic material layer 41 is an inorganic material that can protect the device layer 3 from moisture or oxygen. In this embodiment, the first inorganic material layer 41 is a silicon nitride (SiN) having excellent water vapor barrier properties. _x ), But the material is not limited to this. The first inorganic material layer 41 may be composed of another silicon compound such as silicon oxide or silicon oxynitride, or another inorganic material having water vapor barrier properties such as alumina. The first inorganic material layer 41 is formed on the front surface 2 a of the substrate 2 by using a suitable mask, for example. In this embodiment, the first inorganic material layer 41 is formed by using a mask having a rectangular opening having a size capable of accommodating the device layer 3. The film formation method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, or an ALD (Atomic Layer Deposition) method can be applied. The thickness of the first inorganic material layer 41 is not particularly limited, and is, for example, 200 nm to 2 μm. The second inorganic material layer 42 (second layer) is the same as the first inorganic material layer 41, and includes an inorganic material that can protect the device layer 3 from moisture or oxygen, and the front surface of the first inorganic material layer 41 41a and the side surface 41s are covered on the front surface 2a of the substrate 2. In this embodiment, the second inorganic material layer 42 is a silicon nitride (SiN) having excellent water vapor barrier properties. _x ), However, the material is not limited to this. Other silicon compounds such as silicon oxide or silicon oxynitride, The second inorganic material layer 42 is composed of other inorganic materials having water vapor barrier properties such as alumina. The second inorganic material layer 42 is formed on the front surface 2 a of the substrate 2 by using a suitable mask, for example. In this embodiment, The second inorganic material layer 42 is formed using a mask having a rectangular opening having a size capable of accommodating the first inorganic material layer 41. The film forming method is not particularly limited, CVD (Chemical Vapor Deposition) method can be applied, Sputtering method, Or ALD (Atomic Layer Deposition) method. The thickness of the second inorganic material layer 42 is not particularly limited. For example, 200 nm to 2 μm. The element structure 10 according to this embodiment further includes a first resin material 51. The first resin material 51 is unevenly distributed around the first inorganic material layer 41 (convex portion). In this embodiment, The first resin material 51 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42. Moreover, the partial set exists in the boundary portion 2b between the side surface 41s of the first inorganic material layer 41 and the front surface 2a of the substrate 2. The first resin material 51 has a function of filling a gap G (FIG. 6) between the first inorganic material layer 41 formed near the boundary portion 2 b and the substrate front surface 2 a. In Figure 6, The peripheral structure of the boundary portion 2b of the element structure 10 is enlarged. Since the first inorganic material layer 41 is formed of a CVD film or a sputtering film of an inorganic material, Therefore, the covering characteristic (step coverage) of the uneven structure surface of the substrate 2 including the device layer 3 is relatively low. the result, As shown in FIG. 6, the first inorganic material layer 41 that covers the side surface 3s of the device layer 3 has reduced coverage characteristics near the front surface 2a of the substrate. The film thickness is extremely small, Or there is no possibility of the state of the coating film at all. therefore, In this embodiment, By biasing the first resin material 51 to exist in the coating failure area around the first inorganic material layer 41 as described above, Intrusion of moisture or oxygen into the device layer 3 from the poor coverage region is suppressed. also, When the second inorganic material layer 42 is formed, By making the first resin material 51 function as a base layer of the second inorganic material layer 42, Appropriate film formation of the second inorganic material layer 42 can be performed, As a result, the side surface 41s of the first inorganic material layer 41 can be appropriately covered with a desired film thickness. The method of forming the first resin material 51 is as follows: The resin material vaporized by spray gasification is supplied to the substrate front surface 2a to be condensed to form a resin material film 5a. Hardening the resin material film 5a to form the resin film 5, then, The first resin material 51 is formed by a localization step of removing non-essential parts. the following, The manufacturing method of the element structure performed by the manufacturing apparatus of the element structure of this embodiment is demonstrated. FIG. 7 to FIG. 11 are steps diagrams schematically showing a method of forming the first resin material 51 in the method of manufacturing the element structure of the present embodiment. (Example of Steps for Forming a Device Layer ~ Step A) First, In the manufacturing apparatus 1000 of the element structure shown in FIG. 1, The substrate S carrying the self-loading interlocking vacuum chamber 210 into the core chamber 200 is transferred from the core chamber 200 to the functional layer forming unit 204 by a substrate transfer robot (not shown). In the functional layer forming portion 204, A device layer 3 (functional layer) is formed in a specific region on the substrate S. In this embodiment, As a region to be functional layer 3, Multiple areas on the substrate S can be used, E.g, Four areas are arranged in the X-axis direction and the Y-axis direction, each of which is arranged at a specific interval. Or a single area becomes the functional layer 3. The method for forming the device layer 3 is not particularly limited, According to the material of device layer 3, The structure and the like are appropriately selected. E.g, The substrate S is transferred to a film forming chamber or the like of the functional layer forming section 204, Vapor deposition of a specific material on the substrate S, Sputtering, etc. Furthermore, pattern processing is performed, Thereby, a desired device layer 3 can be formed on a specific region on the substrate S. The method of pattern processing is not particularly limited, For example, etching can be used. Furthermore, Regarding the specific configuration of the device structure manufacturing device 1000, Detailed description is omitted in FIG. 1. The functional layer forming section 204 may be configured by a plurality of processing chambers. Furthermore, it has a structure which can transfer the board | substrate S between adjacent processing chambers. Alternatively, a structure other than a vacuum device may be used. which is, The substrate S can be processed outside the manufacturing apparatus 1000 of the element structure without the need to pass through the interlocking vacuum chamber 210. (Example of forming steps of the first layer-Step A) Second, The substrate S on which the device layer 3 is formed is carried out from the functional layer forming section 204 by a substrate transfer robot (not shown). Then, it is carried in to the first floor forming section 201 through the core chamber 200. In the first layer forming portion 201, By covering the device layer 3, A first inorganic material layer 41 (first layer) is formed in a specific region on the substrate S including the region of the device layer 3. With this, As shown in Figure 7, A first inorganic material layer 41 covering the device layer 3 is formed so as to have a convex portion on the substrate S. In this step, E.g, A mask having a plurality of openings corresponding to the area of the first inorganic material layer 41 may also be used. For example, a first inorganic material layer 41 made of silicon nitride is formed as a part of the protective layer. Here, The first layer forming portion 201 can be set to have a CVD processing apparatus, Or the structure of a sputtering treatment device. also, Although not shown, But in the film forming chamber of the first layer forming portion 201, Setting a stage for arranging the substrate S, A mask disposed on the substrate S, A mask alignment device supporting a mask and positioning the substrate S on the stage, etc. And film-forming material supply device. The substrate S on which the device layer 3 is formed is placed on a stage of the first layer forming section 201 by a substrate transfer robot or the like arranged in the core chamber 200. By masking the alignment device, etc., In a manner that the device layer 3 is exposed through the opening of the mask, A mask is arranged at a specific position on the substrate S. then, E.g, With the CVD method, A first inorganic material layer 41 made of silicon nitride or the like is formed so as to cover the device layer 3. Furthermore, The method for forming the first inorganic material layer 41 is not limited to the CVD method. For example, a sputtering method can also be used. In that case, The first layer forming portion 201 is configured to have a sputtering device. (Examples of resin film formation steps ~ film formation steps ~ step B, Step C) Second, The substrate S on which the first inorganic material layer 41 having the convex portion is formed is carried out from the first layer forming portion 201 by a substrate transfer robot (not shown), Then, it is carried into the resin film forming section 100 through the core chamber 200. at this time, The gas in the chamber 110 is exhausted by a vacuum exhaust device to maintain a vacuum state in the chamber 110. after, By continuously driving the vacuum exhaust, The environment of the chamber 110 is maintained in a vacuum environment. at this time, With a heating device, The chamber 110 is set so that the temperature of at least the inner surface side of the upper space 107 and the lower space 108 becomes equal to or higher than the vaporization temperature of the resin material. Simultaneously, With the substrate cooling device 102a, The substrate S disposed on the stage 102 is cooled together with the stage 102 to a temperature lower than the vaporization temperature of the resin material. also, With the heater 112d, The resin material supply pipe 112 (the first pipe) is heated to a temperature higher than the vaporization temperature of the resin material. The resin film forming section 100 performs a step of forming a resin material film 5a on the substrate S on which the first inorganic material layer 41 is formed, And a step of hardening the resin material film 5a to form the resin film 5. In this step, First of all, Using the resin film forming section 100, E.g, A resin material film 5a containing a material of an ultraviolet curable acrylic resin is formed. Regarding the step of forming the resin material film 5a in the resin film forming section 100, Before substrate S is moved in, First, as shown in Figure 3, As the calibration curve acquisition step S01 and the compensation time setting step S02, Get the calibration line, Set the compensation time. Then, As shown in Figure 3, As external exhaust switching step S03, Gasification start step S04 and gasification duration measurement step S05, In the gasifier 300, a process for stably performing gasification of a resin material is performed. During the gasification stabilization process, The valve 112V is closed by the control unit 400, The formation gas cannot flow into the resin material supply pipe 112, And the valve 113V is opened, The state in which the gas can flow into the resin material bypass pipe 113 is maintained. Furthermore, It is preferable that the gasification of the resin material in the gasifier 300 is maintained for a necessary time before the film formation process according to the stability of the amount of the gasified resin material supplied. Then, As shown in Figure 3, As the film thickness setting step S06, The supply time setting step S07 and the board carrying-in step S08, Set the film thickness The processing time required for the processing is set by the control section 400, As mentioned above, The substrate S carried into the resin film forming section 100 is placed on a stage 102. On the substrate S disposed on the stage 102, A mask (not shown) is arranged at a specific position on the substrate S by a mask mounting device or the like. Then, Align with mask, The environment in the chamber 110, The temperature of the inner wall of the chamber 110, The temperature of the resin material supply pipe 112, The conditions such as the temperature of the substrate S become a specific state, The setting is performed by the control section 400. Then, As shown in Figure 3, As the supply start step S09 and the supply time measurement step S10, The opening and closing states of the valve 112V and the valve 113V are switched by the control unit 400. With this, Make the valve 112V open, And the gas flows into the resin material supply pipe 112, And the valve 113V is closed, On the other hand, the formation gas does not flow into the resin material bypass pipe 113V. With this, The chamber 110 is supplied with a vaporized resin material. The vaporized resin material supplied from the vaporizer 300 passes through the inside of the resin material supply pipe 112, It is supplied from the upper space 107 into the lower space 108 via the shower plate 105. In the lower space 108, The vaporized resin material supplied to the entire surface of the substrate S by the shower plate 105 is shown in FIG. It is condensed on the substrate front surface 2a and becomes a liquid resin material film 5a. In the liquid resin material film 5a, Corners with bad angles on the front surface 2a of the substrate, Recess, Gaps, etc. The film thickness of the resin material film 5a is increased by the surface tension. In step B, By compensating for the reduction in resin material corresponding to the duration of gasification, The processing time (supply time) is controlled by the control unit 400, Thereby, the film formation rate is made uniform. at this time, You can also use a mask (not shown), The resin material film 5a is formed only in a region such as a portion (a nearby position) near the convex portion 41. Furthermore, Taking into account the liquefaction and film formation rate of the resin material, The supply amount of the resin material supplied from the gasifier 300 is controlled by the control unit 400. The resin material liquefied on the surface of the substrate S penetrates into a fine gap by a capillary phenomenon, Or by the surface tension of the resin material, Therefore, the fine unevenness on the substrate S can be smoothed at the same time, A resin material film 5a is formed on one side. With this, Corners with bad corners on the surface of the substrate S, Recess, Gaps, etc. The thickness of the resin material film 5a is increased. especially, A fine gap between the side surface 41s of the first inorganic material layer 41 and the boundary portion 2b of the front surface 2a of the substrate 2 can be filled with the resin material film 5a. also, The vaporized resin material does not condense on the surface of the inner wall and the like of the chamber 110 because the chamber 110 is heated. After the supply time based on the set compensation time, As shown in Figure 3, As the supply stop step S11, A resin material film 5a having a specific thickness is formed on the surface of the substrate S. Since then, The state where the valve 112V is closed by the control unit 400 prevents the gas from flowing into the chamber 110, The valve 113V is opened to form a state where gas can flow into the resin material bypass pipe 113. Since the chamber 110 is continuously exhausted, Therefore, the vaporized resin material is discharged to the outside of the chamber 110 and the film formation is stopped. In this state, While maintaining the vacuum environment in the chamber 110, One surface of the substrate S is irradiated with ultraviolet rays from the UV irradiation device 122. The irradiated ultraviolet rays pass through the top plate 120 and the shower plate 105 containing ultraviolet transmitting materials such as quartz, and reach the substrate S in the chamber 110. A part of the ultraviolet rays irradiated to the substrate S in the chamber 110 is incident on the surface of the substrate S, A photopolymerization reaction occurs on the resin material film 5a containing a resin material formed on the surface of the substrate S. As a result, the liquid film 5a is hardened. As shown in Figure 9, A resin film 5 is formed on the surface of the substrate S. In this embodiment, Forms a thin film of acrylic resin. Then, A mask (not shown) is moved from a film formation position on the substrate S to a retracted position by a mask mounting device or the like. After the end of step B, As shown in Figure 3, As the substrate carrying out step S12, The substrate S on which the resin film 5 is formed is carried out from the resin film forming section 100 by a substrate transfer robot (not shown). When the resin film 5 is sequentially formed on the plurality of substrates S, Repeat the above method, When the maintenance of the resin film forming part 100 is required, Or in the case of maintenance of the gasifier 300, As the gasification stop step S13, The gasification of the resin material in the gasifier 300 is stopped. (Examples of forming steps of resin material ~ localization step ~ step C) Next, The substrate S carried out from the resin film forming unit 100 is carried into the localization processing unit 202 through the core chamber 200 by a substrate transfer robot (not shown). Here, The localization processing unit 202 may be provided with a dry etching processing device, In particular, the structure of a plasma etching processing apparatus. also, Although not shown, However, the localized processing unit 202 may be a parallel plate type plasma processing apparatus. In that case, In the localization processing section 202, Placing the substrate S on the electrode, Introducing an etching gas into the chamber, The high frequency generated by the high frequency power is irradiated into the cavity through the antenna to generate a plasma, A bias voltage is applied from a high-frequency power source to the electrode on which the substrate S is placed. Introducing the ions present in the plasma to the substrate placed on the electrode, The resin film 5 formed on the surface of the substrate S is etched to remove it. Here, The resin film 5 is etched by ions in a plasma generated from an etching gas such as an oxidizing gas. at this time, In order to direct the ions to the substrate S on the electrode, A bias voltage may be applied to the electrodes. The resin film 5 having a thinner flat portion is removed by etching, Corners with bad corners on the surface of the substrate S, Recess, The resin film 5 having a thicker portion than the flat portion remains in the gap portion and the like. The remaining portion becomes the first resin material 51. Furthermore, When the first layer forming portion 201 or the second layer forming portion 203 has a sputtering device or a plasma CVD device, The forming section 201, 203 not only has a film-forming function, It may also have the function of the localization processing unit 202. In that case, E.g, As the first layer forming portion 201, The second layer forming section 203 and the localization processing section 202, The same processing device can be used. In the localization processing unit 202, As shown in Figure 10, In the substrate S on which the resin film 5 is formed, E.g, By plasma etching, As step C, As shown in FIG. 11, most of the resin film 5 is removed. The plasma treatment can calculate the processing time according to the etching rate. And for a specific processing time. and then, A detection device may be provided in the localization processing section 202. The detection device measures a bias voltage applied to an electrode, It is judged from the change of the measured value that the resin film 5 on the substrate S has been almost completely removed, The determination result (detection result) is used as the end point of the etching process. The first resin material 51 remaining on the substrate S due to the dry etching process is shown in FIG. 11. Localized (locally existing) at the boundary portion 2b between the side surface 41s of the first inorganic material layer 41 and the front surface 2a of the substrate 2. and then, The first resin material 51 is unevenly distributed in a portion where the fine unevenness on the surface of the first inorganic material layer 41 can be smoothed. (Example of forming steps of the second layer to step D) The substrate S where the first resin material 51 is locally formed is carried out by a substrate transfer robot 202 (not shown) from the localization processing unit 202. Then, it is carried into the second floor forming section 203 through the core chamber 200. In the second layer forming portion 203, By covering the first inorganic material layer 41 on which the first resin material 51 is formed, A second inorganic material layer 42 (second layer) is formed in a specific region on the substrate S including the convex portion. In step D, Similarly to the first inorganic material layer 41, Using a mask having a plurality of openings corresponding to the area of the second inorganic material layer 42, A second inorganic material layer 42 (second layer) including, for example, silicon nitride, which is the same material as the first inorganic material layer 41, is formed. With this, Can use the first inorganic material layer 41 (the first layer), The first resin material 51 and the second inorganic material layer 42 (second layer) cover the device layer 3 (functional layer), They are made to function as a protective layer of the protective device layer 3. Here, The second layer forming portion 203 can be configured to have a CVD processing apparatus or a sputtering processing apparatus. The second layer forming portion 203 may have the same device configuration as the first layer forming portion 201 described above. E.g, As the first layer forming portion 201 and the second layer forming portion 203, Can use the same processing device, Alternatively, the second layer forming portion 203 can also function as the first layer forming portion 201. also, When the second layer forming portion 203 is a plasma CVD processing apparatus, The second layer forming section 203 can also function as the localization processing section 202. When the localization of the first resin material 51 is performed in the second layer forming portion 203, After localization, The second inorganic material layer 42 (second layer) is directly formed. Since then, The substrate S on which the second inorganic material layer 42 is formed is carried out from the second layer forming section 203 by a substrate transfer robot (not shown), It is carried out to the outside of the manufacturing apparatus 1000 of the element structure through the core chamber 200 and the load-locking vacuum chamber 210. In the manufacturing apparatus 1000 of the element structure of this embodiment, As step B, The resin film 5 is formed by the resin film forming section 100. Since then, In the localization processing section 202, As step C, a first resin material 51 localized by a plasma etching process is formed. Since then, Forming a second inorganic material layer 42 (second layer), Thereby, it is possible to obtain a barrier layer at a portion such as the boundary portion 2b, The second inorganic material layer 42 (second layer) is reliably formed. and, The control unit 400 controls the film forming rate of the resin material in a stable manner. in particular, In step B, The amount of resin material reduced corresponding to the duration of the gasification that caused the gasifier 300 to operate is compensated. therefore, By controlling the supply state by extending the film-forming time, that is, the supply time, Can make the film formation rate stable, This prevents changes in film characteristics. According to the manufacturing method of the element structure of this embodiment, As shown in Figure 15, When the supply time is simply set to be fixed with respect to the target film thickness, As shown in Figure 16, In terms of a reduction in film thickness corresponding to the duration of gasification (acrylic acid supply), The supply time (processing time) is set by adding a compensation time extended corresponding to the gasification duration (acrylic acid supply amount). It can be seen that even if repeated many times, The same film thickness will also be formed. which is, Can compensate for the decrease in film formation rate. the following, Another example of the element structure manufactured by the device 1000 for manufacturing the element structure of the present embodiment will be described. In the element structure 10 of this example, which is manufactured by the device structure manufacturing device 1000 of the present embodiment, It is not limited to the structure in which the resin material is partially distributed around the first inorganic material layer 41 (convex portion), that is, the boundary portion 2b. E.g, This resin material may be left on the front surface 2a of the substrate 2 other than the boundary portion 2b, or the front surface 41a of the first inorganic material layer 41, or the like. In that case, As shown in Figure 12, The second inorganic material layer 42 (second layer) has a region laminated on the first inorganic material layer 41 via the second resin material 52. The second resin material 52 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42. In addition, a partial set separate from the first resin material 51 exists on the front surface 41 a of the first inorganic material layer 41. As mentioned above, According to the element structure 10 of this embodiment, The side surface of the device layer 3 is covered with a first inorganic material layer 41 (first layer) and a second inorganic material layer 42 (second layer). Therefore, intrusion of moisture or oxygen into the device layer 3 can be prevented. also, According to this embodiment, The first resin material 51 is partially distributed in the boundary portion 2b, Therefore, it is possible to prevent a reduction in the barrier properties caused by poor coverage of the first inorganic material layer 41 or the second inorganic material layer 42, Thus, stable device characteristics can be maintained for a long time. the following, Another example of the element structure manufactured by the device 1000 for manufacturing the element structure of the present embodiment will be described. As shown in Figure 13, The element structure 20 of this example further includes a second resin material 52 interposed between the first inorganic material layer 41 and the second inorganic material layer 42. The second resin material 52 is unevenly distributed on the surface of the first inorganic material layer 41 independently of the first resin material 51. In the element structure 20 of this example, The surface of the first inorganic material layer 41 is not necessarily flat, E.g, Illustrates the following scenario, which is: Before film formation (when the substrate is transported or before it is put into the film formation device) or during film formation, etc. Fine particles P are mixed into the film, As a result, unevenness is formed. If fine particles are mixed into the first inorganic material layer 41, The coverage characteristic of the first inorganic material layer 41 to the device layer 3 is reduced, There is a possibility that desired barrier properties cannot be obtained. therefore, The element structure 20 of this example has a structure in which a coating failure portion of the first inorganic material layer 41 caused by the incorporation of the particles P and the like is filled with a second resin material 52. More typically, The second resin material 52 is unevenly distributed on the boundary portion 32 b between the surface of the first inorganic material layer 41 and the peripheral surface of the fine particles P due to surface tension. With this, The coverage of device layer 3 is improved, And by having the second resin material 52 function as a base, It is possible to achieve proper film formation of the second inorganic material layer 42. Furthermore, The resin film 5 can also be formed thinly on the flat portion during film formation. Around the particles P, The resin film 5 which is thicker than the flat portion is formed by surface tension. The second resin material 52 is formed in the same manner as the first resin material 51. The second resin material 52 may be made of the same organic material as the first resin material 51. In that case, The first resin material 51 and the second resin material 52 can be formed simultaneously in the same step. Here, In the localization processing unit 202, The etching of the resin film 5 is stopped as follows, which is, By etching, Remove the thinner part, Leaving the thicker part, which is, In the part other than the part where the particles P are present, Removing the resin film 5, As a result, the first inorganic material layer 41 is exposed. With this, When the projection is viewed from above in the vertical direction, The resin film 5 in the boundary portion 32b covered by the particles P is not over-etched. Therefore, the resin film 5 is surely left on the boundary portion 32 b around the fine particles P. the result, A boundary portion 32b near the particles P, The resin film 5 has a smooth surface shape. If there is no particle P at all, When the resin film 5 has been substantially removed by anisotropic etching, The resin film 5 will be completely removed, As a result, the first inorganic material layer 41 is exposed. Furthermore, The stop of etching can be based on the results of plasma emission spectrum analysis, Or, the elapsed time of the anisotropic etching is performed. at this time, The resin film 5 at the boundary portion 2b will not be removed. Thus, the resin film 5 is localized, Thereby, the first resin material 51 is formed. Similarly, The resin film 5 at the boundary portion 32b will not be removed. Thus, the resin film 5 is localized, Thereby, the second resin material 52 is formed. In this example, It is also possible to obtain the same effect as that of the manufacturing of the element structure 10 described above. also, According to this example, The second resin material 52 can compensate the film quality degradation caused by the incorporation of the fine particles P, Therefore, it is possible to ensure the desired barrier properties and improve productivity. the following, Another example of the element structure manufactured by the device 1000 for manufacturing the element structure of the present embodiment will be described. As shown in Figure 14, The element structure 30 in this example has, for example ,: Substrate 21, It has a device layer 3 (functional layer); Convex portion 40, It covers the side 3s of the device layer 3; The first inorganic material layer 41 (the first layer) and the second inorganic material layer 42 (the second layer), These are formed on the surface of the substrate 21 by covering the convex portion 40 and the device layer 3. The convex portion 40 is formed on the front surface 21a of the substrate 21, The central portion includes a recessed portion 40 a that houses the device layer 3. In this example, The bottom surface of the recess 40a is formed at a position higher than the front surface 21a of the substrate 21, It can also be formed at the same height position as the front surface 21a, Or it may be formed in a position lower than the front surface 21a. The element structure 30 of this example further includes a resin material 53 interposed between the first inorganic material layer 41 and the second inorganic material layer 42. The resin material 53 is located at the boundary portions 21b and 21b, And the boundary portion 22 b between the inner surface of the convex portion 40 and the device layer 3. With this, It is possible to suppress poor coating of the first inorganic material layer 41 and the second inorganic material layer 42 on the convex portion 40 and the front surface 3a of the device layer 3, Thereby, the improvement of the barrier property can be realized. The resin material 53 can be formed by the same method as the first resin material 51 and the second resin material 52 described above. In such a substrate S having such unevenness, The resin material that exists in the partial set flattens the portion that cannot be covered by the inorganic material layer. Therefore, the inorganic material layer formed on the resin material can be formed more uniformly and with good coverage. and then, The sealing of the resin material to water is lower than that of the inorganic material layer, However, the resin material that exists in a partial set is covered by the inorganic material layer and will not be exposed to the external environment. Therefore, the sealing performance is improved. which is, It is preferable that the resin material is present in a localized manner so as not to be exposed to the external environment. Instead of making it film-like. the above, The preferred embodiment of the present invention has been described. As explained above, These are merely illustrative illustrations of the present invention, It should be understood that it should not be considered a qualifier. Additions can be made without departing from the scope of the invention, Omitted, Replacement and other changes. therefore, Regarding the present invention, Should not be construed as being limited by the above description, It is limited by the scope of the application. E.g, In the above embodiment, The second inorganic material layer 42 (second layer) covering the first inorganic material layer 41 (first layer) is composed of a singular layer. However, the second inorganic material layer 42 (second layer) may be composed of a multilayer film. In that case, It is also possible to supply a resin material to the substrate at each step of forming each layer of the film to form a resin material that is biased in the uneven portion of the substrate. This can further improve the barrier properties. and then, In the above embodiment, After the first inorganic material layer 41 (the first layer) is formed, Localizes the first resin material 51 around the first inorganic material layer 41 that becomes a convex portion, However, before the first inorganic material layer 41 is formed by the first layer forming portion 201, With the resin film forming section 100 and the localization processing section 202, The first resin material 51 is unevenly distributed around the device layer 3. This can improve the coating efficiency of the first inorganic material layer 41 to the device layer 3. the following, A film forming method according to a second embodiment of the present invention based on a drawing, Film forming device, A method for manufacturing the element structure and a device for manufacturing the element structure will be described. FIG. 17 is a flowchart showing a manufacturing method (film forming method) of the element structure according to this embodiment. In this embodiment, The difference from the first embodiment is related to the method for compensating the film formation rate. The other components corresponding to the first embodiment are marked with the same symbols, The description is omitted. In the first embodiment described above, To compensate for the reduced film formation rate, Extending the film-forming time of each substrate S, However, in this embodiment, The supply amount of the resin material supplied from the vaporizer 300 to the resin film forming section 100 is controlled to increase over time. in particular, When the resin material film 5a is formed, Control the supply of resin materials. As shown in Figure 17, With calibration line acquisition step S01, Compensation resin amount setting step S32, External exhaust switching step S03, Gasification start step S04, Gasification resin amount accumulation step S35, Film thickness setting step S06, Supply resin amount setting step S37, Board loading step S08, Supply start step S09, Supply resin amount measurement step S30, Supply control step S31, Supply stop step S11, The substrate carrying-out step S12 and the vaporization stop step S13. In the compensation resin amount setting step S32 shown in FIG. 17, Corresponds to the compensation time setting step S02 in the first embodiment, Relative to the calibration curve obtained in the calibration curve acquisition step S01, In order to compensate for the decrease in the supply amount of the resin material equivalent to the film-forming treatment originally set, A compensation resin amount that increases the supply amount of the resin material with respect to the elapse of the film-forming treatment of one sheet corresponding to the cumulative supply amount of the resin material is set. The amount of the compensating resin is set so as to compensate for a decrease in the film forming rate with respect to a target film thickness to be formed. The tendency of changes in the amount of compensation resin or film formation rate is stored in the control section. Simultaneously with the gasification start step S04 shown in FIG. 17, As a step corresponding to the gasification duration measurement step S05 shown in FIG. 3, that is, the gasified resin amount accumulation step S35, The accumulation (measurement) of the gasification-continuous resin amount that started to be the basis for calculating the amount of the compensated resin. Then, In the film thickness setting step S06 and the resin supply amount setting step S37 (corresponding to the supply time setting step S07) shown in FIG. 17, According to the target film thickness, And the amount of resin that continues to be vaporized at the beginning of film formation to calculate the amount of compensated resin. in particular, Corresponds to the amount of resin that continues to vaporize from the vaporized resin material, The amount of resin supplied in one film formation is set so as to gradually increase with the passage of the supply time. Then, In the substrate carrying-in step S08 shown in FIG. 3, The substrate S is carried into the resin film forming section 100. Then, In the supply start step S09 shown in FIG. 3, The control unit 400 switches the opening and closing states of the valve 112V and the valve 113V. The self-gasifier 300 supplies the resin material to the resin material supply pipe 112 (the first pipe). Filming started. at this time, As a step corresponding to the supply time measurement step S10 shown in FIG. 3, that is, the supply resin amount measurement step S30, The measurement of the supply amount of the resin material converted into the film thickness was started. During film formation, As the supply control step S31 shown in FIG. 17, According to the resin supply amount set in the resin supply amount setting step S37, By means of the control unit 400 to compensate for the decrease in the film formation rate, The film opening was performed by adjusting the opening degree of the valve 112V gradually in accordance with the cumulative amount of the gasification-continuous resin amount. Here, The valve 112V is configured so that the opening degree can be adjusted. Then, In the supply stop step S11 shown in FIG. 17, The control unit 400 switches the opening and closing states of the valve 112V and the valve 113V. The self-gasifier 300 supplies the resin material to the resin material bypass pipe 113 (second pipe), The target film thickness is obtained and the film formation is completed. Then, As the substrate unloading step S12 shown in FIG. 17, The formed substrate S is carried out from the resin film forming section 100. when necessary, The film thickness setting step S06 to the substrate unloading step S12 are repeatedly performed a plurality of times. at this time, Accumulate the amount of gasified resin continuously in step S35, Based on this value, Each time the resin supply amount setting step S37 is recalculated, the opening degree of the valve 112V in the film formation is controlled. in particular, According to the increase in the amount of resin that continues to vaporize the resin material in the gasifier 300, In order to compensate the amount of resin that is reduced due to heat curing, etc., It is set so as to increase the amount of resin supplied as the film-forming time increases to compensate for the decrease in film-forming rate. Then, As the gasification stop step S13 shown in FIG. 17, Stopping gasification in the gasifier 300, The measurement of the resin content during the gasification is terminated. Furthermore, The film thickness setting step S06 and the resin supply amount setting step S37 are only required to be performed after the substrate carrying-in step S08. That is, before the actual film forming step is performed, Its implementation period, The sequence is not limited to the above-mentioned sequence of steps. also, Even if the gasifier 300 does not operate continuously, Gasification efficiency will also decrease due to the accumulation of gasification time since the most recent zeroing. Even if the operation of the gasifier 300 is repeatedly performed, stop, As long as the amount of resin that continues to vaporize is accumulated, The reduction in gasification efficiency can still be calculated. As a manufacturing method of the element structure of this embodiment, As described above, the supply state is controlled in such a manner as to compensate for the gasification resin material that decreases in accordance with the amount of resin that continues to vaporize. With this, The film forming rate of the resin material is stabilized regardless of the amount of resin that continues to be vaporized. and then, That is, when it is convenient to sequentially form a plurality of substrates S, It can also make the film forming rate of resin materials regardless of the number of times of film, And the gasification continuous resin amount at the time of film formation since the last clearing was stable. therefore, Can prevent changes in film formation characteristics, Therefore, variations in film characteristics (film thickness) can be prevented. Furthermore, The control of each step can be performed by the control section 400, The calculation of the calibration curve or the calculation and accumulation of the amount of the film-forming resin is also performed by a calculation section included in the control section 400. and then, The memory of the necessary data is also performed by the memory section of the control section 400. the following, A film forming method according to a third embodiment of the present invention based on a drawing, Film forming device, A method for manufacturing the element structure and a device for manufacturing the element structure will be described. FIG. 18 is a flowchart showing a manufacturing method (film forming method) of the element structure according to this embodiment. In this embodiment, The difference from the second embodiment is related to the resin supply method for compensating the film formation rate. The other components corresponding to the second embodiment are marked with the same symbols, The description is omitted. in particular, When the resin material film 5a is formed, Control the supply of resin materials. As shown in Figure 18, With calibration line acquisition step S01, Compensation resin amount setting step S32, External exhaust switching step S03, Gasification start step S04, Gasification resin amount accumulation step S35, Film thickness setting step S06, Supply resin amount setting step S37, Board loading step S08, Supply start step S09, Supply resin amount measurement step S30, Supply stop step S11, The substrate carrying-out step S12 and the vaporization stop step S13. In the film formation of this embodiment, According to the resin supply amount set in the resin supply amount setting step S37, By means of the control unit 400 to compensate for the decrease in the film formation rate, The film is formed by adjusting the supply amount of the resin material from the resin material raw material container 150 of the vaporizer 300 in accordance with the cumulative amount of the resin that has been vaporized continuously, and increasing the amount. at this time, The supply amount of the liquid resin material to the heating portion 152 in a mist form is controlled per unit time. also, when necessary, Repeat the process from the film thickness setting step S06 to the substrate unloading step S12 multiple times. at this time, Accumulate the amount of gasified resin continuously in step S35, Based on this value, Each time the resin supply amount setting step S37 is recalculated to compensate the resin amount and control the resin material supply amount from the resin material raw material container 150 during film formation. in particular, According to the increase in the amount of resin that continues to vaporize the resin material in the gasifier 300, In order to compensate the amount of resin that is reduced due to heat curing, etc., It is set so as to increase the amount of resin supplied as the film-forming time increases to compensate for the decrease in film-forming rate. As a manufacturing method of the element structure of this embodiment, As described above, in a manner of compensating for a gasification resin material that is reduced corresponding to the amount of resin that continues to gasify, Controlling the amount of resin material supplied to the gasifier 300 to increase it over time, As a result, the film forming rate of the resin material is stabilized regardless of the amount of resin that continues to be vaporized. and then, That is, when it is convenient to sequentially form a plurality of substrates S, It can also make the film forming rate of resin materials regardless of the number of film forming times, And the gasification continuous resin amount at the time of film formation since the last clearing was stable. therefore, Can prevent changes in film formation characteristics, Therefore, variations in film characteristics (film thickness) can be prevented. Industrial applicability As a utilization example of the present invention, Examples include sealing of organic EL devices and sealing of electronic devices.

2‧‧‧ substrate

2a‧‧‧ Front (1st side)

2b‧‧‧Border

2c‧‧‧ back (second side)

3‧‧‧device layer (functional layer)

3a‧‧‧ front

3s‧‧‧side

5‧‧‧ resin film

5a‧‧‧Resin material film

10‧‧‧ Element Structure

20‧‧‧ Element Structure

21‧‧‧ substrate

21a‧‧‧front

21b‧‧‧Border

22b‧‧‧Border

30‧‧‧ element structure

32b‧‧‧Border

40‧‧‧ convex

40a‧‧‧Concave

41‧‧‧ 1st inorganic material layer (first layer)

41a‧‧‧front

41s‧‧‧side

42‧‧‧ 2nd inorganic material layer (second layer)

51‧‧‧The first resin material

52‧‧‧The second resin material

53‧‧‧The first resin material

100‧‧‧Resin film forming section (film forming room)

102‧‧‧ carrier

102a‧‧‧ substrate cooling device

105‧‧‧ shower plate

107‧‧‧ Upper Space

108‧‧‧ lower space

110‧‧‧ chamber

112‧‧‧Resin material supply pipe (first piping)

112V‧‧‧Valve

113‧‧‧Resin material bypass (second piping)

113V‧‧‧ Valve

114‧‧‧ exhaust pipe

120‧‧‧Top plate

122‧‧‧UV irradiation device

130‧‧‧Gasification tank

130G‧‧‧ carrier gas supply pipe

132‧‧‧Ejection Department

135‧‧‧Heating Department

140‧‧‧Resin material liquid supply pipe

140V‧‧‧ valve

150‧‧‧Resin material raw material container

150G‧‧‧Pressurized gas supply pipe

200‧‧‧Core Room

201‧‧‧First layer forming section (film forming room)

202‧‧‧Localization processing department

203‧‧‧Second layer forming section (film forming room)

204‧‧‧Functional layer forming section (film forming room)

210‧‧‧Loading interlocking vacuum chamber

300‧‧‧Gasifier

400‧‧‧Control Department

1000‧‧‧ device manufacturing device

G‧‧‧ Clearance

P‧‧‧ Particle

S‧‧‧ substrate

FIG. 1 is a schematic diagram showing an apparatus for manufacturing an element structure according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing a resin film forming portion in the device structure manufacturing apparatus according to the first embodiment of the present invention. Fig. 3 is a flowchart showing a method of manufacturing the element structure according to the first embodiment of the present invention. FIG. 4 is a schematic cross-sectional view showing an element structure manufactured by the device manufacturing apparatus for the element structure according to the first embodiment of the present invention. Fig. 5 is a plan view showing an element structure manufactured by the device manufacturing apparatus for the element structure according to the first embodiment of the present invention. FIG. 6 is an enlarged cross-sectional view of a main part of the element structure. FIG. 7 is a step diagram showing steps in the method of manufacturing the element structure according to the first embodiment of the present invention. FIG. 8 is a step diagram showing steps in the method of manufacturing the element structure according to the first embodiment of the present invention. FIG. 9 is a step diagram showing the steps in the method of manufacturing the element structure according to the first embodiment of the present invention. FIG. 10 is a step diagram showing steps in the method of manufacturing the element structure according to the first embodiment of the present invention. FIG. 11 is a step diagram showing steps in the method of manufacturing the element structure according to the first embodiment of the present invention. FIG. 12 is a schematic cross-sectional view showing a modified example of the configuration of the element structure manufactured by the device manufacturing apparatus for the element structure of the first embodiment of the present invention. FIG. 13 is a schematic cross-sectional view showing a modification example of the configuration of the element structure manufactured by the device manufacturing apparatus for the element structure according to the first embodiment of the present invention. FIG. 14 is a schematic cross-sectional view showing a modification example of the configuration of the element structure manufactured by the device manufacturing apparatus for the element structure of the first embodiment of the present invention. FIG. 15 is a graph showing the relationship between the vaporization duration (supply amount) of the resin material and the film formation thickness during a fixed processing time. FIG. 16 is a graph showing the relationship between the vaporization duration (supply amount) of the resin material and the film thickness with the compensation time added in the method of manufacturing the element structure according to the first embodiment of the present invention. Fig. 17 is a flowchart showing a method of manufacturing the element structure according to the second embodiment of the present invention. FIG. 18 is a flowchart showing a method of manufacturing the element structure according to the third embodiment of the present invention.

Claims (12)

A film forming method is a method in which a liquid resin material is sprayed into a heating portion in a mist state to vaporize, and a vaporized vapor is supplied to a substrate to form a resin material film; The film formation conditions are controlled in such a manner that the total amount of the resin material supplied to the heating portion, that is, the cumulative amount of vaporization, decreases the vaporization rate of the resin material. The film-forming method of claim 1, wherein the film-forming conditions include a film-forming time for filming the resin material film on each of the substrates, or a unit of time for spraying the liquid resin material in a mist state to the heating portion. At least one of the supply amounts. The film forming method according to claim 1 or 2, wherein the heating portion has an inclined surface. The film forming method according to claim 1 or 2, wherein the resin material is a material of an ultraviolet curable acrylic resin. A film-forming device is a device that sprays a liquid resin material in a mist state to a heating portion to vaporize it, and supplies the vaporized vapor to a substrate to form a resin material film; and has: a recording portion, Its record contains the gasification operation data of the cumulative amount of the resin material supplied to the heating unit; and the control unit, which refers to the gasification operation data, decides the time to extend the film formation time, or makes the heating unit misty. At least any one of an increase in the amount of supply per unit time of the above-mentioned liquid resin material is ejected. A method for manufacturing an element structure, comprising: a first step of forming a first layer, the first layer covering a functional layer disposed on one side of a substrate, and having a localized convex portion including an inorganic material; a second step It is to form a resin material film containing the above-mentioned resin material by supplying the liquid resin material in a vaporized form so as to cover the first layer on one side of the substrate; the third step is a side section Observe the first layer, leaving a portion of the resin material film at a position including a boundary portion between the outer side of the convex portion and one surface of the substrate, and leave the resin material film at a position different from the position where the resin material film remains. Removal of the resin material film; and a fourth step of forming a second layer containing an inorganic material by covering a part of the remaining resin material film and the first layer exposed by the removal of the resin material film ; And in the above second step, in a manner of compensating for the resin material that has been reduced corresponding to the gasification duration of the gasified resin material System supply state. For example, in the method for manufacturing a component structure according to claim 6, in the second step, the film formation of the resin material film is extended corresponding to the supply amount of the resin material corresponding to the supply time of the vaporized resin material. time. The method for manufacturing a component structure according to claim 7, wherein during the film forming treatment of the resin material film in the second step, the vaporized resin material is supplied to the inside of the film forming chamber, and the resin material is When the film is not film-formed, the vaporized resin material is sent to the outside of the film-forming chamber; and a cumulative amount obtained by accumulating the supply amount of the resin material as the vaporization amount of the resin material is obtained, and according to The accumulated amount controls the film forming time of the resin material film. The manufacturing method of the element structure according to any one of claims 6 to 8, wherein the third step is to observe the first layer from a side section, and expose the region including the top portion on the outer side surface of the convex portion so as to expose the first layer. The resin material film is removed. The manufacturing method of the element structure according to any one of claims 6 to 8, wherein the third step described above uses a dry etching method as a method for removing the resin material film. For example, the manufacturing method of the element structure of claim 10, wherein the third step is to detect a change in a specific condition among the conditions for performing the etching treatment on the resin material film, and use the detected detection result as the etching treatment. end. An apparatus for manufacturing an element structure, comprising: a first layer forming portion that forms a first layer; the first layer covers a functional layer disposed on one side of a substrate, and has a local convex portion including an inorganic material; a resin; A film forming part, which can supply the vaporized resin material from a vaporizer that heats the liquid resin material to vaporize, to form a resin material film covering the first layer and containing the resin material; The chemical treatment unit is a part of the resin material film located at a position including a boundary portion between an outer side surface of the convex portion and one of the substrates when the first layer is viewed from a side section, and the resin is located and remained. The resin material film is removed at different positions of the material film; and a second layer forming portion that covers the convex portion on one side of the substrate, a portion of the remaining resin material film, and removes The exposed first layer forms a second layer containing an inorganic material, and includes: a supply pipe connected to a gas provided in the gasifier. The gasification tank supplies the vaporized resin material to the resin film formation part during film formation; the outer tube is connected to the gasification tank, and sends out the vaporized resin material to the resin during non-film formation treatment Outside of the film forming section; and a switching valve that switches the supply pipe and the external pipe; and has a control section that controls the formation of the resin in a manner that compensates for the resin material that decreases in accordance with the duration of vaporization. Supply time for supplying resin material to the film portion.