TWI585837B - Sputter etching chamber and method of sputtering - Google Patents

Sputter etching chamber and method of sputtering Download PDF

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TWI585837B
TWI585837B TW100136915A TW100136915A TWI585837B TW I585837 B TWI585837 B TW I585837B TW 100136915 A TW100136915 A TW 100136915A TW 100136915 A TW100136915 A TW 100136915A TW I585837 B TWI585837 B TW I585837B
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chamber
wafer
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etching
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TW201316390A (en
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爵根 維查特
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歐瑞康先進科技股份有限公司
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濺鍍蝕刻室及濺鍍方法 Sputter etching chamber and sputtering method

本發明係關於一種用於聚合物基板的真空處理之原位調整。This invention relates to an in situ adjustment for vacuum processing of polymer substrates.

在半導體製程中,尤其是晶圓封裝,聚合物之使用已經變得非常重要。像是以真空塗敷器械對矽晶圓基板塗敷聚醯亞胺(PI)或聚苯並二噁唑(PBO)之製程,由於這些材料之大量除氣處理而已經變成一非常普遍的問題。甚至更有問題的是具有所謂強化型嵌入式晶圓級閘球陣列封裝技術(eWLB)之情況,其中矽盤被嵌入一由聚合物樹脂所製之晶圓(亦稱為擴散型晶圓)中。The use of polymers has become very important in semiconductor processes, especially wafer packaging. For example, the process of applying polyimine (PI) or polybenzoxazole (PBO) to a wafer substrate by a vacuum coating device has become a very common problem due to the large amount of degassing treatment of these materials. . Even more problematic is the case of so-called enhanced embedded wafer level gate ball array packaging technology (eWLB), in which the wafer is embedded in a wafer made of polymer resin (also known as a diffusion type wafer). in.

作為此晶圓封裝製程之一部分,金屬化被執行於如第1圖所示之圖案化晶圓5上。此如第1圖所示之晶圓5包含一基部基板10(例如矽)以及(若干)具有露出接觸部13之金屬層12(其等可為不連續的)。此諸金屬層之接觸部13可經由一疊於上方且由有機聚合物材料(例如PI或PBO)所組成之已圖案化絕緣層14而接近。此目的在於使諸金屬層12之接觸部13具有多個金屬接觸層(或接觸體)16及18(見第2圖)。諸接觸體16及18使一具導電性路徑有該等層12,其將保持可經由圖案化絕緣層14中之諸開口而接近。此程序通常係以兩步驟進行;亦即一用以從諸金屬層12之接觸部處去除金屬氧化物沉積之蝕刻步驟,以及隨後之一用以沉積諸接觸體16、18之金屬化步驟。As part of this wafer packaging process, metallization is performed on patterned wafer 5 as shown in FIG. The wafer 5 as shown in Fig. 1 comprises a base substrate 10 (e.g., crucible) and (several) metal layers 12 having exposed contact portions 13 (which may be discontinuous). The contact portions 13 of the metal layers can be accessed via a patterned insulating layer 14 that is stacked over and composed of an organic polymeric material such as PI or PBO. The purpose is to have the contact portions 13 of the metal layers 12 having a plurality of metal contact layers (or contacts) 16 and 18 (see Fig. 2). The contacts 16 and 18 have a conductive path with the layers 12 that will remain accessible via the openings in the patterned insulating layer 14. This procedure is typically carried out in two steps; that is, an etching step for removing metal oxide deposits from the contacts of the metal layers 12, and a subsequent metallization step for depositing the contacts 16, 18.

在如第1圖所說明之第一步驟中,藉由惰性氣體之電漿(典型地係氬離子Ar+)所進行之濺鍍蝕刻,被用來去除已形成於諸金屬層12之露出接觸部13上的金屬氧化物(MeO)。此諸MeO層9被示意地說明於第1圖,其中誇張之尺寸係為了容易觀察(除有特別表示,本申請案中之諸圖式均未依比例繪製)。此類氧化物之去除較佳地是可最大化金屬層12與諸稍後鋪設之接觸層16、18間的導電性與黏著力。In the first step as illustrated in Figure 1, sputtering etching by a plasma of an inert gas (typically Ar argon Ar + ) is used to remove exposed contacts that have been formed on the metal layers 12 Metal oxide (MeO) on portion 13. The MeO layers 9 are schematically illustrated in Figure 1, in which the exaggerated dimensions are for ease of viewing (the figures in the present application are not drawn to scale unless otherwise indicated). The removal of such oxides is preferably to maximize the conductivity and adhesion between the metal layer 12 and the later laid contact layers 16, 18.

不幸地,電漿蝕刻並不侷限於只對金屬接觸部13。更確切地說,此電漿亦會蝕刻有機絕緣層14,因此而加速諸揮發性化合物(VCs)從其處放出,並同時釋出聚合物材料。這些VCs及被釋出之聚合物可能污染金屬接觸部13並干擾對其蝕刻以去除MeO。在第2圖所說明之第二步驟中,至少一接觸層(兩接觸層16、18被顯示於此被說明之實施例中)被鋪設在諸金屬層12之各接觸部上。例如,諸接觸層16、18可為鈦,其次為銅。這些接觸層16、18典型地經由從一適當金屬標靶(例如鈦或銅)處之濺鍍而被鋪設,此並未顯示於圖中。將察覺到的是,如在第一步驟中之電漿濺鍍,此金屬濺鍍程序亦不侷限於只對諸接觸區域13。更確切地說,一金屬塗層將被施加於整個晶圓5表面(包含聚合物絕緣層14之上表面)上,如第2圖中以箭頭所示意說明的。此意謂諸接觸體16、18之延伸已超過如前所述被鋪設之諸接觸部13,並如第2圖中所示般地覆蓋於晶圓5之整個上表面。Unfortunately, plasma etching is not limited to only the metal contact portion 13. More specifically, the plasma also etches the organic insulating layer 14, thereby accelerating the release of volatile compounds (VCs) therefrom and simultaneously releasing the polymeric material. These VCs and the released polymer may contaminate the metal contacts 13 and interfere with etching them to remove MeO. In the second step illustrated in FIG. 2, at least one contact layer (the two contact layers 16, 18 are shown in the illustrated embodiment) is laid over the respective contact portions of the metal layers 12. For example, the contact layers 16, 18 can be titanium, followed by copper. These contact layers 16, 18 are typically laid via sputtering from a suitable metal target such as titanium or copper, which is not shown in the figures. It will be appreciated that, as with the plasma sputtering in the first step, the metal sputtering process is not limited to only the contact regions 13. More specifically, a metal coating will be applied to the entire surface of the wafer 5 (including the upper surface of the polymer insulating layer 14) as illustrated by the arrows in FIG. This means that the contact bodies 16, 18 extend beyond the contact portions 13 laid as described above and cover the entire upper surface of the wafer 5 as shown in FIG.

一旦接觸體16、18之(諸)金屬塗層已被沉積,則來自該層14之VCs及有機材料的釋出將停止,因為被沉積在此絕緣層14之頂部上的金屬塗層將作為對VCs及其他有機物之傳播的屏障。隨著對諸接觸體16、18之諸金屬層的沉積之後,接著典型地會執行一光微影蝕刻程序以便分離此諸層,其將形成接觸體16、18(亦即在諸金屬接觸區域13上方)之部分與遮蓋晶圓5其餘部分之諸已沉積金屬層的其餘部分,並提供諸接觸體16、18所要之導電電路。此後續之光微影蝕刻步驟係在本案所揭示內容之範圍外。Once the metal coating(s) of the contact bodies 16, 18 have been deposited, the release of VCs and organic material from the layer 14 will cease because the metal coating deposited on top of the insulating layer 14 will act as A barrier to the spread of VCs and other organic matter. Following the deposition of the metal layers of the contacts 16, 18, a photolithographic etching process is typically performed to separate the layers, which will form the contacts 16, 18 (i.e., in the metal contact regions). Portions of 13 above) cover the remainder of the deposited metal layers that cover the remainder of wafer 5 and provide the desired conductive circuitry for contacts 16, 18. This subsequent photolithographic etching step is outside the scope of the disclosure.

前述兩步驟通常被相繼地分別執行於蝕刻室與濺鍍室中。在被執行於蝕刻室中之第一步驟中,該室最初被徹底地抽空至一真空狀態,且除氣作業被進行於一被提升之溫度下。此除氣作業係重要的,因為某一除氣溫度不可被超過以避免聚合物絕緣層14之降解。除此之外,此除氣取決於時間,其無法被輕易地加速。然而,長的除氣時間並非需要,因為那將會降緩生產率。緊接著除氣之後,利用一惰性氣體電漿(典型地係氬)之濺鍍蝕刻作業被執行以便清潔具有污染物MeO之諸露出金屬表面(接觸部13)。此程序相當簡單,但其具有之缺點在於其並無選擇性及Ar+離子並不僅是從露出之接觸部表面處蝕刻MeO,且還從絕緣層14處蝕刻聚合物材料。所產生之經蝕刻聚合物經常在諸室壁上形成一不完整之厚沉積物,此會導致形成顆粒。此外,因為此蝕刻程序將熱導引至晶圓,所以將隨著蝕刻作業時間而增加揮發性化合物(VC)由晶圓處除氣(主要是來自絕緣層14之水汽及有機殘留物)之量。這些VCs經由除氣所達成之釋出可被視為在蝕刻室中之壓力升。這些VCs導致之影響在於:因污染物(亦即揮發性有機體)之併合,MeO無法適當地從諸金屬層之露出接觸部處被清掉。最後,MeO從金屬表面處之蝕刻清理速率會低於那些表面基於由絕緣層14所去除之VCs的污染速率,此將導致一不良之接觸電阻。The foregoing two steps are typically performed sequentially in the etch chamber and the sputtering chamber, respectively. In the first step performed in the etching chamber, the chamber is initially thoroughly evacuated to a vacuum state, and the degassing operation is performed at a raised temperature. This degassing operation is important because a certain outgassing temperature cannot be exceeded to avoid degradation of the polymer insulating layer 14. In addition to this, the degassing depends on time, which cannot be easily accelerated. However, long degassing time is not needed because it will slow down productivity. Immediately after degassing, a sputtering etch operation using an inert gas plasma (typically argon) is performed to clean the exposed metal surfaces (contacts 13) having the contaminant MeO. This procedure is quite simple, but it has the disadvantage that it is not selective and the Ar + ions not only etch MeO from the exposed contact surface, but also etch the polymer material from the insulating layer 14. The resulting etched polymer often forms an incomplete thick deposit on the walls of the chamber which can result in the formation of particles. In addition, since this etching process directs heat to the wafer, the volatile compound (VC) is degassed from the wafer (mainly water vapor and organic residues from the insulating layer 14) as the etching operation time increases. the amount. The release of these VCs via degassing can be considered as a pressure rise in the etch chamber. The effect of these VCs is that MeO cannot be properly removed from the exposed contacts of the metal layers due to the combination of contaminants (i.e., volatile organic compounds). Finally, the etch rate of MeO from the metal surface will be lower than those of the surface based on the VCs removed by the insulating layer 14, which will result in a poor contact resistance.

在前述之第二步驟中,晶圓被移動至一濺鍍室,而諸金屬接觸層16、18便是被鋪設於此處。在具有兩或更多層之情形中,此濺鍍金屬沉積可被鋪設於兩或更多個連續之濺鍍室中,各用於諸已鋪設層中之每一者。由於此金屬濺鍍作業沉積金屬於聚合物絕緣層14上,且此經沉積之金屬充當作為除氣之屏障,所以其主要地係在上述之第一步驟期間進行除氣(以Ar+電漿來濺鍍以便從諸露出之金屬接觸部13處去除MeO),因為必須對付那些與相繼之聚合物濺鍍及除氣相關聯之問題。In the second step described above, the wafer is moved to a sputtering chamber where the metal contact layers 16, 18 are laid. In the case of two or more layers, this sputtered metal deposit can be applied to two or more consecutive sputtering chambers, each for each of the laid layers. Since the metal sputtering operation deposits metal on the polymer insulating layer 14, and the deposited metal acts as a barrier for degassing, it is mainly degassed during the first step described above (with Ar + plasma) Sputtering is performed to remove MeO) from the exposed metal contacts 13, as the problems associated with successive polymer sputtering and degassing must be addressed.

因此,本技藝中存在一種需求:改良上述第一步驟中之蝕刻程序以達成低顆粒產生率,而此諸顆粒則係由來自絕緣層14之經蝕刻聚合物材料所形成;且最小化在諸位於(諸)金屬層12與諸各自接觸體16、18間之介面處由於過度之MeO或在蝕刻作業期間從絕緣層14所釋出之其他污染物(亦即聚合物顆粒及VCs)所導致之接觸電阻。Accordingly, there is a need in the art to improve the etching process in the first step described above to achieve a low particle generation rate, and the particles are formed from the etched polymer material from the insulating layer 14; and minimized in The interface between the metal layer 12 and the respective contact bodies 16, 18 is caused by excessive MeO or other contaminants (ie, polymer particles and VCs) released from the insulating layer 14 during the etching operation. Contact resistance.

第3圖顯示一種感應耦合式電漿(ICP)蝕刻室之典型結構。在這被界定於一介電殼體20內之室中,電漿由一線圈22所產生,此線圈以一較佳在300至15000 kHz範圍內(最佳在或大約450 kHz)之頻率將電源連接至此電漿。氬或另一可離子化惰性氣體經由一氣體入口24及由一組屏蔽罩(屏蔽罩26及28)之諸通道所界定之泵唧通道而被供應通過該室。待蝕刻以便從諸露出接觸部13去除MeO沉積之晶圓5(見第1圖)被放置在一台座30之一支撐表面上,在此處例如在1至70 MHz範圍內(最佳在或大約13.56 MHz)之高頻率被施加以便藉由一自生偏壓電位將諸電將離子吸引至晶圓5。台座30本身至少部分地延伸於殼體20內(並因此在蝕刻室內),以致使其至少上表面(支撐表面)被完全暴露於該室內。作為第一種方法,可被認定的是該室被很良好地調控,以致使揮發性化合物VCs之唯一來源係晶圓5(且更具體而言係絕緣層14,見第1圖)。如果該室具有多個冷壁40且與清潔表面,則VC將在因蝕刻作業所引起之溫度增加時立即離開晶圓5,且這些將沉積在如箭頭100所示之諸壁40上。此機構充分地運作以便對一低熱負載或當諸室壁40之有效冷卻可被達到及維持時將污染降至最小。然而,當線圈22係位於殼體20外側時,一有效冷卻在該室用以耦接如ICP之電磁功率的部分並非總是可行的。為了有效地傳輸RF輻射,殼體20必須藉由介電材料(諸如石英)所製成,其典型地具有一低傳導性並因此無法被均勻地及有效地冷卻。反而,此類材料之局部化冷凍會導致因溫度梯度引起之內部應力,此將可能造成殼體20之破裂。分別從設計及維修立場而言,通常也最好使用可容易且快速替換以供清理之零件。經冷卻之零件(例如被連接至熱交換設備或包含被連接至冷凍水源的冷卻水導管)不能被有效率地換出及替換。此意謂在多個生產條件下,諸壁40將會熱起來,以致使吸附VC之機構在運轉一些時間後失效。此被表示於第4圖,其中吸附及去吸附速率呈平衡。在此點處,VCs及其他由晶圓5之聚合物絕緣層14所釋出之有機體將聚積在該室內。Figure 3 shows a typical structure of an inductively coupled plasma (ICP) etch chamber. In the chamber defined herein in a dielectric housing 20, the plasma is produced by a coil 22 which is preferably at a frequency in the range of 300 to 15000 kHz (optimally at or about 450 kHz). The power supply is connected to this plasma. Argon or another ionizable inert gas is supplied through the chamber via a gas inlet 24 and a pumping passage defined by passages of a plurality of shields (shields 26 and 28). The wafer 5 to be etched to remove the MeO deposit from the exposed contacts 13 (see FIG. 1) is placed on a support surface of a pedestal 30, for example in the range of 1 to 70 MHz (best in or A high frequency of approximately 13.56 MHz) is applied to attract ions to the wafer 5 by a self-generated bias potential. The pedestal 30 itself extends at least partially within the housing 20 (and thus within the etch chamber) such that at least its upper surface (support surface) is completely exposed to the chamber. As a first method, it can be assumed that the chamber is well regulated such that the sole source of volatile compound VCs is wafer 5 (and more specifically insulating layer 14, see Figure 1). If the chamber has a plurality of cold walls 40 and a clean surface, the VC will exit the wafer 5 as soon as the temperature caused by the etching operation increases, and these will deposit on the walls 40 as indicated by arrow 100. This mechanism is fully operational to minimize contamination for a low heat load or when effective cooling of the chamber walls 40 can be achieved and maintained. However, when the coil 22 is located outside of the housing 20, an effective cooling of the portion of the chamber for coupling electromagnetic power, such as ICP, is not always feasible. In order to efficiently transmit RF radiation, the housing 20 must be made of a dielectric material such as quartz, which typically has a low conductivity and therefore cannot be cooled uniformly and efficiently. Instead, localized freezing of such materials can cause internal stresses due to temperature gradients that may cause cracking of the casing 20. From a design and maintenance standpoint, it is usually best to use parts that can be easily and quickly replaced for cleaning. The cooled parts (eg, connected to a heat exchange device or containing a cooling water conduit connected to a source of chilled water) cannot be efficiently swapped out and replaced. This means that under a plurality of production conditions, the walls 40 will heat up so that the mechanism for adsorbing VC fails after a certain period of operation. This is shown in Figure 4, where the adsorption and desorption rates are balanced. At this point, VCs and other organisms released by the polymer insulation layer 14 of the wafer 5 will accumulate in the chamber.

第5a-d圖中說明在類似於第3-4圖所示者且用於以氬(Ar)作為電漿源之典型蝕刻作業的蝕刻室內所測量到之典型殘留氣體譜。在這些圖式中之數據係從一高壓四極質量分析器獲得並以對數比例尺被標繪。從頂部至底部,第5a圖係一在其中無晶圓5或氬之室內所取之質量譜,其顯示在完全抽空至真空(只有小的氣漏)後之3×10-7mbar總基(初)壓;第5b圖係一在氬被引入後之類似質量譜,而氬係濺鍍蝕刻程序所需者;第5c圖係另一個沒有氬在該室內但其中包括一具有一由PI所製成之絕緣層14之晶圓5的質量譜(同參圖1),其顯示從該晶圓處除氣之情形;及第5d圖係另一在一PI塗敷晶圓之ICP濺鍍蝕刻期間所取之質量譜。由這些質量譜可見主要之VCs係晶圓(16、17、18amu)、碳氫化合物(2、12、15amu及更高)以及CO(28amu)與CO2(44amu)。必須注意的是,水汽及其他VC之部分壓力已經接近Ar作業壓力。此在一些情形中甚至可防止ICP電漿之點燃。A typical residual gas spectrum measured in an etching chamber similar to that shown in Figures 3-4 and used for a typical etching operation using argon (Ar) as a plasma source is illustrated in Figures 5a-d. The data in these figures was obtained from a high pressure quadrupole mass analyzer and plotted on a logarithmic scale. From top to bottom, Figure 5a is a mass spectrum taken in a chamber without wafer 5 or argon, showing a total base of 3 x 10 -7 mbar after a complete evacuation to vacuum (only a small air leak) (initial) pressure; Figure 5b is a similar mass spectrum after argon is introduced, and required for argon-based sputter etching procedures; Figure 5c is another without argon in the chamber but including one with one by PI The mass spectrum of the wafer 5 of the insulating layer 14 produced (see Fig. 1), which shows the degassing from the wafer; and the 5d image is another ICP sputtering of a PI coated wafer. The mass spectrum taken during the plating etch. From these mass spectra, the main VCs wafers (16, 17, 18 amu), hydrocarbons (2, 12, 15 amu and higher), and CO (28 amu) and CO 2 (44 amu) are visible. It must be noted that part of the pressure of water vapor and other VCs is already close to the Ar operating pressure. This can even prevent ignition of the ICP plasma in some cases.

VC在ICP處理室中之依時性反應(見第3-4圖)被顯示於第6圖中。在晶圓5進入該室後,水汽含量立即增加兩次方之量。當Ar被引至一大約8×10-4mbar之相當高壓力時,其他之氣體信號由於抑制效應而被略微減小。在此處,Ar(36amu-Ar同位素36具有0.34%之相對微小部分,並因此提供一相對於成較低濃度之氣體而言更佳之信號)信號被用以達成更佳之可量測性。一48秒之蝕刻程序被起動,其顯示在數秒之後便可觀察到CO2(44amu)及CO(28amu)之信號的強勁增加。對O2(32amu)及H2O(18amu)而言,在最初的數秒可觀察到減少,此可歸因至氧由於與諸聚合物成分反應變成CO2及CO所致之消耗。接著,在大約5秒後,所有信號由於溫度升高及PI塗敷之晶圓的除氣而呈增加狀態。這些信號在20秒之內將再度下降。The time-dependent response of VC in the ICP processing chamber (see Figures 3-4) is shown in Figure 6. After the wafer 5 enters the chamber, the water vapor content is immediately increased by two squares. When Ar is introduced to a relatively high pressure of about 8 x 10 -4 mbar, the other gas signals are slightly reduced due to the suppression effect. Here, Ar (36amu-Ar isotope 36 has a relatively small fraction of 0.34% and thus provides a better signal relative to a lower concentration of gas) signals are used to achieve better scalability. A 48 second etch procedure was initiated which showed a strong increase in CO 2 (44 amu) and CO (28 amu) signals after a few seconds. For O 2 (32 amu) and H 2 O (18 amu), a decrease was observed in the first few seconds, which is attributable to the consumption of oxygen due to reaction with the polymer components to become CO 2 and CO. Then, after about 5 seconds, all of the signals are in an increased state due to the temperature rise and degassing of the PI coated wafer. These signals will fall again within 20 seconds.

對於一如第7圖中可見之180秒的更長蝕刻時間而言,去吸附之第二峰值可在大約80秒後被觀察到。第一去吸附峰值較弱且較短並可被詮釋為表面去吸附,而第二去吸附峰值較強且較寬並可被詮釋為從聚合物處之大量去吸附。第7圖顯示兩種狀況,其被調整至相同時間尺度,一大約30℃壁溫之冷蝕刻室的信號軌跡(第7a圖)及一大約120℃壁溫之熱蝕刻室的信號軌跡(第7b圖)。如可輕易見到的,所有信號對諸熱壁而言由於此諸壁之減小的吸附能力而係較高。同時,Ar信號係恆定不變。亦可見的是,水汽之抽出在卸下用於熱壁狀況之晶圓5後會較低。For a longer etch time of 180 seconds as seen in Figure 7, the second peak of desorption can be observed after about 80 seconds. The first desorption peak is weaker and shorter and can be interpreted as surface desorption, while the second desorption peak is stronger and wider and can be interpreted as a large amount of desorption from the polymer. Figure 7 shows two conditions, which are adjusted to the same time scale, a signal trace of a cold etch chamber with a wall temperature of about 30 ° C (Fig. 7a) and a signal trace of a thermal etch chamber with a wall temperature of about 120 °C (p. 7b)). As can be readily seen, all of the signals are higher for the hot walls due to the reduced adsorption capacity of the walls. At the same time, the Ar signal is constant. It can also be seen that the extraction of moisture is lower after the wafer 5 for hot wall conditions is removed.

因為殘餘氣體環境扮演一重要的角色,所以在處理室中之VC(包括被釋出之蒸汽污染物及被噴濺之聚合物材料)量的簡單模型可用下列公式表示:VC之聚積~(DSUB-AWALL+DWALL-P)其中P係泵唧率,AWALL係壁之吸附率,DWALL係壁之去吸附率,及DSUB係基板5之去吸附率,所有均係相對於VC而言。吸附與去吸附之平衡主要係決定於溫度。Because the residual gas environment plays an important role, a simple model of the amount of VC (including the released vapor contaminants and the sputtered polymer material) in the processing chamber can be expressed by the following formula: VC accumulation ~ (D SUB -A WALL +D WALL -P) where P pumping rate, A WALL wall adsorption rate, D WALL wall desorption rate, and D SUB system substrate 5 desorption rate, all relative to VC. The balance between adsorption and desorption is mainly determined by temperature.

在上列之關係式中,假定污染VC之源體僅係晶圓5而已,其由下列之三個熱源所影響:In the above relationship, it is assumed that the source of the contaminated VC is only the wafer 5, which is affected by the following three heat sources:

1. 由除氣程序所給予之晶圓起始溫度,而此晶圓通常在蝕刻程序進行前並不先被冷卻下來,1. The wafer starting temperature given by the degassing program, which is usually not cooled down prior to the etching process.

2. 由蝕刻程序所產生之程序熱,及2. The heat of the program generated by the etching process, and

3. 由熱室環境經輻射所導致之升溫,此乃取決於作業時間、處理工作週期、及源體(例如線圈22)設計。3. The temperature rise caused by the radiation in the hot chamber environment depends on the operating time, the processing cycle, and the source (eg, coil 22) design.

此程序熱(上列第2項)係晶圓5升溫之主要促成因素,且其因為清潔接觸部13必需去除某些材料而將無法避免。晶圓5用以抑制除氣作用之主動冷卻在此可為一溶液,但一太廣泛之冷卻將造成任何可凝結化合物凝結並聚積於晶圓5上,其將導致甚至更高之污染及接觸電阻問題。增加泵唧速度P將導致較小之VC;然而,此將受安裝在此系統上之泵以及受第3-4圖中所示用以使該室免受蝕刻材料噴濺之屏蔽罩26及28所限制,並因此呈現泵唧率P之一極限。This program heat (item 2 above) is a major contributor to wafer 5 heating, and it is unavoidable because the cleaning contact 13 must remove certain materials. The active cooling of wafer 5 to suppress outgassing can be a solution here, but too broad cooling will cause any condensable compounds to condense and accumulate on wafer 5, which will result in even higher contamination and contact. Resistance problem. Increasing the pumping speed P will result in a smaller VC; however, this will be affected by the pump mounted on the system and the shield 26 as shown in Figures 3-4 to protect the chamber from etching material and 28 limits, and thus presents a limit of pumping rate P.

因此,現在所揭示者係若干可降低VC之方法,其係根據若干改良之冷卻策略而藉由引進可在上列關係式中增加壁AWALL之吸附率的手段而達成。冷卻並非始終可行於該室之所有位置中,尤其不能在電磁功率將會穿過殼體20之場合,類似於當使用若干ICP線圈(第3-4圖中之22)時。如果充分傳導性材料被用於那些區域(例如上述之頂壁),諸壁40之區域的冷卻(例如,第3-4圖中之頂壁)係可能的。然而,當一定的量被聚積在那些表面上之時,運用很冷之表面通常具有未受控制之VC釋出的危機。當此系統被通風以避免環境濕度之吸附時,很冷之表面亦需要熱起來。因此這些易於針對屏蔽罩調換進行維護之態樣也必須被列入考量。Thus, the present disclosure is directed to a number of methods for reducing VC that are achieved by introducing a means to increase the adsorption rate of wall A WALL in the above listed relationship in accordance with a number of improved cooling strategies. Cooling is not always possible in all locations of the chamber, especially where electromagnetic power will pass through the housing 20, similar to when several ICP coils (22 in Figures 3-4) are used. If sufficient conductive material is used for those areas (such as the top wall described above), cooling of the areas of the walls 40 (e.g., the top wall in Figures 3-4) is possible. However, when a certain amount is accumulated on those surfaces, the use of a very cold surface usually has a crisis of uncontrolled VC release. When the system is vented to avoid adsorption of ambient humidity, the cold surface also needs to be heated. Therefore, these aspects that are easy to maintain for the shield change must also be considered.

因此,較佳在-20至+10℃範圍內之適度冷卻被提出於下列之解決方法中,尤其與一吸氣泵機構相結合。此諸解決方法利用一主動冷卻元件,其被安置在蝕刻室中並較佳地位於或接近其與在使用期間支撐晶圓5之台座30的支撐表面相鄰接之基部處。此位置放置該經冷卻之元件,其接近VC之產生源體且不在該室之一泵唧口或諸更遠壁40的遙遠區域中。此主動冷卻元件較佳地被配置成使得其在蝕刻過程中可比蝕刻室內之任何其他主要表面(除其上將停置晶圓5之台座30外)更加靠近晶圓5。所謂「主要表面」意指一具有不可忽略之外表廣闊區域的表面,諸如該室之一壁40或位於其中之一暗區屏蔽罩;此名詞不包括相對於該壁或屏蔽罩呈可忽略外表區域之不重要或小的表面。此位於該室之基部處的位置典型地亦提供一可接近經冷卻元件以便維修或更換之便力區域。Therefore, moderate cooling, preferably in the range of -20 to +10 °C, is proposed in the following solutions, especially in combination with a getter pump mechanism. The solutions utilize an active cooling element that is disposed in the etch chamber and is preferably located at or near the base adjacent the support surface of the pedestal 30 that supports the wafer 5 during use. This position places the cooled element adjacent to the source of the VC and is not in the remote region of one of the chambers of the chamber or the further walls 40. The active cooling element is preferably configured such that it can be closer to the wafer 5 during the etching process than any other major surface in the etch chamber (except for the pedestal 30 on which the wafer 5 will be parked). By "main surface" is meant a surface having a non-negligible surface area, such as one of the walls 40 of the chamber or a dark area shield; the term does not include a negligible appearance relative to the wall or shield An unimportant or small surface of the area. This location at the base of the chamber typically also provides a zone of force that is accessible to the cooled component for repair or replacement.

第8圖示意地說明一被封圍在一如第3-4圖中所示之殼體20內的蝕刻室,其具有一被安置成與位於該室之基部處之台座30相鄰之主動冷卻元件50。此如第8圖中所示之主動冷卻元件50係純粹以示意方式顯示,並非意欲代表此一元件之特定結構或位置,只是用以表示其被安置成與位於該蝕刻室之基部處之台座30的表面相鄰接。例如,冷卻元件50可為一獨立元件被併合在蝕刻室內,或者其可構型成屏蔽罩26及28其中之一者或是二者的一部分。在一較佳的實施例中,冷卻元件50可呈一環圈之形式,其圍繞並共有一在蝕刻期間支撐晶圓5之台座30之表面的共同縱向軸線。在此被說明之實施例中,一吸氣材料52之層被沉積在冷卻元件50之表面上。吸氣材料係一般習知者,且一種對於水汽及CO/CO2具有親合性之吸氣材料較佳地將被選定(例如鈦),因為這些係經由因濺鍍所進行之除氣作用而從絕緣層14所釋出之主要污染物。此吸氣材料將具有一對於蝕刻室中之諸VC水汽很強之親合性,且將吸引那些如第8圖中以箭號表示之種類,藉此與其一起形成多個保持被吸附在經塗敷吸氣劑之表面上之穩定固態化合物。冷卻此經塗敷吸氣劑之表面將加強此效應並提供更大之VCs吸附容量。Figure 8 is a schematic illustration of an etch chamber enclosed within a housing 20 as shown in Figures 3-4 having an active arrangement adjacent to a pedestal 30 at the base of the chamber. Cooling element 50. The active cooling element 50 as shown in Fig. 8 is shown purely in schematic form and is not intended to represent a particular structure or position of the element, but merely to indicate that it is placed with a pedestal located at the base of the etch chamber. The surface of 30 is adjacent. For example, the cooling element 50 can be a separate component that is incorporated into the etch chamber, or it can be configured as one of the shields 26 and 28 or a portion of both. In a preferred embodiment, the cooling element 50 can be in the form of a loop that surrounds and shares a common longitudinal axis of the surface of the pedestal 30 that supports the wafer 5 during etching. In the illustrated embodiment, a layer of getter material 52 is deposited on the surface of the cooling element 50. Suction materials are generally known, and a getter material having an affinity for moisture and CO/CO 2 will preferably be selected (e.g., titanium) because these are degassed by sputtering. The main pollutants released from the insulating layer 14. The getter material will have a strong affinity for the VC vapors in the etch chamber and will attract those species as indicated by the arrows in Figure 8, whereby a plurality of them remain adhered to each other. A stable solid compound on the surface of the getter is applied. Cooling the surface of the coated getter will enhance this effect and provide greater VCs adsorption capacity.

概括地,一濺鍍蝕刻室被提供為具有一用於引導可離子化氣體之入口及一位於此室中之支撐表面。此之稱表面係適於支撐一將在該室中被蝕刻之晶圓。此室亦包括一位於該室內並與該台座鄰接之主動冷卻元件。In general, a sputter etch chamber is provided with an inlet for guiding the ionizable gas and a support surface in the chamber. This surface is adapted to support a wafer that will be etched in the chamber. The chamber also includes an active cooling element located within the chamber and adjacent to the pedestal.

另也提供一種濺鍍方法,其包括下列步驟:(a)放置一晶圓,欲從其上去除金屬氧化物沉積,其係位於如前節內容所述之濺鍍蝕刻室中的支撐表面上;(b)將該主動冷卻元件冷凍至一在-50至+10℃範圍內之溫度;以及(c)在該室中離子化一可離子化氣體以便由此產生電漿,其中此電漿蝕刻晶圓以去除金屬氧化物沉積;且其中相較於該室中之其他表面,因該蝕刻而導致從該晶圓處被釋出之揮發性化合物將被優先地吸附至該主動冷卻元件上。A sputtering method is also provided, comprising the steps of: (a) placing a wafer from which metal oxide deposits are to be removed, which are on a support surface in a sputter etch chamber as described in the previous section; (b) freezing the active cooling element to a temperature in the range of -50 to +10 ° C; and (c) ionizing an ionizable gas in the chamber to thereby produce a plasma, wherein the plasma is etched The wafer is deposited to remove metal oxide; and wherein the volatile compounds released from the wafer are preferentially adsorbed onto the active cooling element due to the etching as compared to other surfaces in the chamber.

第9圖顯示一如上摘要說明之利用一主動冷卻元件50之第一實施例。為清晰起見,只有位於蝕刻室之基部處的諸特徵被顯示於第9圖中,且先前圖式中所用之同樣元件符號在本圖中被用以表示同樣之特徵。在本實施例中,將被蝕刻以去除MeO沉積之晶圓5如前所述地停置在該蝕刻室中之台座30上。晶圓5被一由石英所製且位於台座30上之保護環6所圍繞,其被連接至一射頻偏壓。一暗區屏蔽罩26形成泵通道之一部分。一相配屏蔽罩28藉由若干例如呈一線圈式管道系統29形狀並與屏蔽罩28相接觸之殼體而被冷卻。一在-50至+10℃範圍內,較佳在-20至+10℃範圍內,更佳在-20至+0℃範圍內的冷卻流體係經由管道系統29而循環。此管道系統係由一種導熱材料(諸如金屬,且較佳係銅)所製成,以便確保主動冷卻屏蔽罩28本身可基於由其處至該冷卻流體中之熱傳遞而達到一大體上在(諸)前述範圍內之溫度。Figure 9 shows a first embodiment utilizing an active cooling element 50 as outlined above. For the sake of clarity, only the features at the base of the etch chamber are shown in Figure 9, and the same component symbols used in the previous figures are used in this figure to indicate the same features. In the present embodiment, the wafer 5 to be etched to remove the MeO deposition is placed on the pedestal 30 in the etching chamber as described above. The wafer 5 is surrounded by a guard ring 6 made of quartz and located on the pedestal 30, which is connected to a radio frequency bias. A dark area shield 26 forms part of the pump passage. A mating shield 28 is cooled by a plurality of housings, for example, in the shape of a coiled conduit system 29 and in contact with the shield 28. A cooling stream system in the range of -50 to +10 °C, preferably in the range of -20 to +10 °C, more preferably in the range of -20 to +0 °C, is circulated via the piping system 29. The piping system is made of a thermally conductive material, such as metal, and preferably copper, to ensure that the active cooling shield 28 itself can be substantially (based on) the heat transfer from it to the cooling fluid. The temperatures within the foregoing ranges.

在蝕刻作業期間,相較於蝕刻室中之其他較高溫度表面,從主動冷卻屏蔽罩28上之絕緣層14處所釋出之VC的吸附在熱力學上將是有利的。此效應係藉由其相對接近與晶圓5緊鄰之VC源而被加強,而此代表VC相較於其他因升高之溫度而導致在熱力學上不利之表面將行進一較短距離便可被吸附。The adsorption of VC released from the insulating layer 14 on the active cooling shield 28 will be thermodynamically advantageous during the etching operation as compared to other higher temperature surfaces in the etch chamber. This effect is enhanced by its relatively close proximity to the VC source immediately adjacent to the wafer 5, which represents that the VC will travel a short distance compared to other surfaces that are thermodynamically unfavorable due to elevated temperatures. Adsorption.

除了主動冷卻元件50(在本實施例中則係為屏蔽罩28)外,一種可加強從該室空間處去除VC並改善該室中之狀況的方式係在蝕刻該預定晶圓5以去除MeO沉積前先濺鍍蝕刻一用鈦或其他吸氣材料,例如鉭、鋁、鋯、鉬、鈮或釩予以塗敷或所製成之基板(下文中被稱為吸氣基板)。在此方法中,此吸氣基板首先被放置在該室中之台座30上,且氬電漿經由被作用在該台座上之偏壓電位而被活化並導引在吸氣基板處。從吸氣基板處被濺鍍之吸氣材料將進入氣相,並吸附至位於該室中之諸內表面,包括至殼體20之諸壁40,及至諸屏蔽罩26、28中之每一個。尤其,當主動冷卻屏蔽罩28在此程序進行期間被冷卻時,經濺鍍之吸氣材料將被優先地吸附至屏蔽罩26之表面,因為吸附至較冷之表面(此因此展現該經濺鍍材料之一更高容量的吸附等溫線)在熱力學上將係有利的。然而,經濺鍍之吸氣材料將亦被沉積在蝕刻室中之其他內表面上。一旦使用吸氣基板之蝕刻步驟被完成,此蝕刻基板在蝕刻室中可由將被蝕刻去MeO沉積之預定晶圓5所取代。於是,用以去除那些沉積之蝕刻作業如上所討論般地進行。應注意到,蝕刻該吸氣基板以在該蝕刻室之諸內表面上沉積吸氣材料將可在各晶圓5被蝕刻以去除MeO沉積之後被執行,或其可在複數個連續晶圓5被蝕刻之後被執行。例如,該吸氣基板之蝕刻可在每一2、5、10、25或50(或一些其他數字)晶圓蝕刻作業之後被執行。In addition to the active cooling element 50 (which in the present embodiment is the shield 28), one way to enhance the removal of VC from the chamber space and improve the condition in the chamber is to etch the predetermined wafer 5 to remove MeO. A substrate (hereinafter referred to as a getter substrate) coated or made of titanium or other getter material such as tantalum, aluminum, zirconium, molybdenum, niobium or vanadium is sputtered prior to deposition. In this method, the getter substrate is first placed on the pedestal 30 in the chamber, and the argon plasma is activated and guided at the getter substrate via a bias potential applied to the pedestal. The getter material sputtered from the getter substrate will enter the gas phase and be adsorbed to the inner surfaces located in the chamber, including to the walls 40 of the housing 20, and to each of the shields 26, 28. . In particular, when the active cooling shield 28 is cooled during this process, the sputtered getter material will be preferentially adsorbed to the surface of the shield 26 because it is attracted to the cooler surface (this thus exhibits the splash One of the higher capacity adsorption isotherms of the plating material) will be thermodynamically advantageous. However, the sputtered getter material will also be deposited on other inner surfaces in the etch chamber. Once the etching step using the getter substrate is completed, the etched substrate can be replaced in the etch chamber by a predetermined wafer 5 to be etched to remove MeO. Thus, the etching operation to remove those deposits is performed as discussed above. It should be noted that etching the getter substrate to deposit getter material on the inner surfaces of the etch chamber will be performed after each wafer 5 is etched to remove MeO deposition, or it may be on a plurality of consecutive wafers 5 It is executed after being etched. For example, the etching of the getter substrate can be performed after each 2, 5, 10, 25, or 50 (or some other digital) wafer etch job.

鈦係較佳之吸氣材料,此係由於其對水、氫、及碳氫化合物之高吸氣能力,且係因為不存在對後續用以產生接觸層16之金屬化的干擾,如果此層將是在許多情形下被用作黏著接觸層(亦即被首先直接地沉積在金屬層12上之接觸層)之鈦。此鈦吸氣基板因此可甚至在一室中用一簡單之工具便能被製備。Titanium is the preferred getter material due to its high gas absorption capacity for water, hydrogen, and hydrocarbons, and because there is no interference with subsequent metallization to create contact layer 16, if this layer will It is used in many cases as titanium for an adhesive contact layer (i.e., a contact layer that is first deposited directly on the metal layer 12). This titanium getter substrate can thus be prepared even in a single chamber with a simple tool.

第10圖中顯示一鈦吸氣基板在一如第9圖所示之蝕刻室中經濺鍍48秒後之吸氣效果。在此實驗中,鈦金屬之12nm厚度被從一具有300mm直徑之基板處去除,此相當於被沉積至諸壁40及該室中之其他諸內表面上之總量大約3mg的鈦。而從第10圖中之H2O信號可見,水汽位準在吸氣步驟後被降低至少於50%。吸氣材料是否可能因一些金屬層沉積而對蝕刻室之狀況產生影響是一個重要的問題。此係特別地重要,因為通過諸介電壁40之電磁耦合可能受金屬層所影響。然而,已被發現的是,對於僅幾nm之鈦層而言,在感應耦合上之影響係相當小的。當金屬層被沉積在具有吸附於其上之水汽的諸壁上時,以及當來自於下一個經PI塗敷之晶圓的水汽與剛被沉積之金屬相互作用時,這些金屬層在下及上介面上被氧化。Fig. 10 shows the gettering effect of a titanium gettering substrate after being sputtered for 48 seconds in an etching chamber as shown in Fig. 9. In this experiment, the 12 nm thickness of the titanium metal was removed from a substrate having a diameter of 300 mm, which corresponds to a total of about 3 mg of titanium deposited on the walls 40 and other inner surfaces in the chamber. As can be seen from the H 2 O signal in Figure 10, the water vapor level is reduced by at least 50% after the gettering step. Whether the getter material may affect the condition of the etching chamber due to some metal layer deposition is an important issue. This is particularly important because the electromagnetic coupling through the dielectric walls 40 may be affected by the metal layer. However, it has been found that for a titanium layer of only a few nm, the effect on inductive coupling is quite small. When the metal layer is deposited on the walls having the moisture adsorbed thereon, and when the water vapor from the next PI coated wafer interacts with the metal just deposited, these metal layers are below and above The interface is oxidized.

取代使用一Ti塗敷之吸氣基板(或者一由鈦所製成者),台座30本身可由一能作為用來進行腔室調節之吸氣材料的純金屬(例如Ti)所塗敷或製成。在此實施例中,台座30(有時被稱為墊盤)本身可作為昇華物吸氣裝置,如果此RF或偏壓電位被激活以便例如就直接在諸用於連續晶圓5之連續(或經選定之複數個連續)蝕刻作業之間的期間內蝕刻台座30之表面。此將濺鍍直接來自台座表面處之吸氣材料,例如鈦。此經濺鍍之吸氣材料於是將被沉積在蝕刻室之諸內表面上,其在此處將加強VC污染物之吸附,而此諸VC污染物則係在確保可移除MeO沉積物之濺鍍作業中從絕緣層14所釋出者。在此方式中,此蝕刻室可在多個連續晶圓5的濺鍍之間中被短期間地再調整,而無需在該室中另提供一分離之吸氣基板,此分離之吸氣基板的提供將減小生產率及循環時間。Instead of using a Ti coated getter substrate (or one made of titanium), the pedestal 30 itself may be coated or made of a pure metal (e.g., Ti) that can be used as a getter for chamber conditioning. to make. In this embodiment, the pedestal 30 (sometimes referred to as a pad) itself can act as a sublimate getter if the RF or bias potential is activated, for example, directly in the continuous use of the continuous wafer 5. The surface of the pedestal 30 is etched during the period between (or selected plurality of consecutive) etching operations. This will sputter directly from the getter material at the surface of the pedestal, such as titanium. The sputtered getter material will then be deposited on the inner surfaces of the etch chamber where it will enhance the adsorption of VC contaminants which are responsible for ensuring removable MeO deposits. Released from the insulating layer 14 during the sputtering operation. In this manner, the etch chamber can be re-adjusted for a short period of time between the sputtering of the plurality of continuous wafers 5 without separately providing a separate getter substrate in the chamber, the separate getter substrate The provision will reduce productivity and cycle time.

在此實施例中,台座30之材料較佳地被選定為不致會干擾後續之接觸層16沉積,或不致會對該沉積有所阻礙。再者,此台座/墊盤材料可被選定成與黏著接觸層之材料相對應以便消除此顧慮。此實施例較佳地可為一分離之吸氣基板濺鍍作業,因為其將完全地省去額外之步驟,此導致蝕刻室之較短閒置時間。In this embodiment, the material of the pedestal 30 is preferably selected such that it does not interfere with subsequent deposition of the contact layer 16, or does not impede the deposition. Again, the pedestal/pad material can be selected to correspond to the material of the adhesive contact layer to eliminate this concern. This embodiment may preferably be a separate getter substrate sputtering operation as it will completely eliminate the extra steps which result in a shorter idle time of the etch chamber.

在第11圖所示之另一實施例中,一額外之昇華物吸氣裝置被提供於蝕刻室中。在一最簡單之情形中,一可經由一作用電流而被電阻加熱之單圈電阻加熱線35被用作該額外之昇華物吸氣裝置。此線35可被纏繞在晶圓位置周圍(例如,圓周地環繞台座30之支撐表面並與其同心)並被連接至一電流源以作用一用於加熱該線之電流,且其可藉由同心之屏蔽罩26及28而被保護。此線雖原則上可由任何吸氣材料製成,但一名義上含85%鈦及15%鉬(以質量為基,可忽略或微量不純物)之組合物係較佳用於電阻加熱者。鈦藉由作用一電流並因此電阻加熱該線而被蒸發,且被凝結至經冷卻之屏蔽罩28而藉此約束從絕緣層14以VC型式釋出之水汽、氫及碳氫化合物。在一用於300mm晶圓之蝕刻室中,此線35可被配置在一環繞晶圓5周圍之400mm直徑上(亦即在台座30之支撐表面周圍),藉此使該線具有1250mm之總長度。一具有2mm直徑之線可在50A電流及40V電壓下運作以便蒸發鈦吸氣材料。In another embodiment, shown in Figure 11, an additional sublimate getter is provided in the etch chamber. In the simplest case, a single-turn resistive heating wire 35 that can be heated by a resistive current is used as the additional sublimate getter. This line 35 can be wound around the wafer location (e.g., circumferentially surrounding and concentric with the support surface of the pedestal 30) and connected to a current source to apply a current for heating the line, and it can be concentric The shields 26 and 28 are protected. Although this line can in principle be made of any getter material, a composition nominally containing 85% titanium and 15% molybdenum (on a mass basis, negligible or traces of impurities) is preferred for resistance heating. Titanium is vaporized by applying a current and thus electrical resistance to the wire, and is condensed to the cooled shield 28 to thereby confine water vapor, hydrogen and hydrocarbons released from the insulating layer 14 in VC mode. In an etch chamber for a 300 mm wafer, the line 35 can be placed over a 400 mm diameter around the wafer 5 (i.e., around the support surface of the pedestal 30), thereby providing the line with a total length of 1250 mm. degree. A wire having a diameter of 2 mm can operate at 50 A current and 40 V voltage to evaporate the titanium getter material.

在本質上,線35作用如同一應需求而運作之吸氣昇華泵。在蝕刻作業期間,此線35並不被蝕刻,因為其並非在負電位上,且係由如第11圖中所示意說明之屏蔽罩28所遮蔽。以Ar電漿如此般地執行一蝕刻作業並不會導致釋出吸氣材料。反而,鈦昇華泵在此應用中之一優點在於其可僅在需要時起作用。此意謂電阻加熱器(線35)較佳地僅在蝕刻程序正運作中時且按照預期之VC負載(其如第6-7圖所示係依時性)而被啟動。藉由產生或參照正執行中之特定蝕刻作業之一適當的依時性VC量變曲線,吸氣材料之釋出可被協調或編程以符特定應用要求。例如,線35之電流可被使用作為一可編程參數,其可基於特定應用之VC-時間量變曲線而在時間與強度上被設定。或者,當一個晶圓5已被卸載以便在下一個晶圓被裝載前先準備一低污染程度狀態時,此昇華加熱器(線35)將被啟動。In essence, line 35 acts as an inhalation sublimation pump that operates on demand. This line 35 is not etched during the etching operation because it is not at a negative potential and is shielded by the shield 28 as illustrated in Fig. 11. Performing an etching operation in such a manner as Ar plasma does not result in the release of the getter material. Instead, one of the advantages of titanium sublimation pumps in this application is that it can only function when needed. This means that the resistive heater (line 35) is preferably activated only during the etching process and in accordance with the expected VC load (which is timed as shown in Figures 6-7). The release of getter material can be coordinated or programmed to meet specific application requirements by generating or referencing an appropriate time-dependent VC quantity curve for one of the particular etching operations being performed. For example, the current of line 35 can be used as a programmable parameter that can be set in time and intensity based on the VC-time quantity curve for a particular application. Alternatively, the sublimation heater (line 35) will be activated when a wafer 5 has been unloaded to prepare for a low level of contamination before the next wafer is loaded.

在第12圖所說明之另一實施例中,台座30係同樣地由諸如鈦之吸氣材料所製成,如同在第9圖中所討論之實施例。然而,在此實施例中,此台座在其上表面具有一周圍區域8,其從環繞晶圓5周圍之保護環6處徑向地向外延伸,此周圍區域8不受任何暗區屏蔽罩所保護,並因此在濺鍍作業期間會敞開向電漿濺鍍以便從晶圓5處移除MeO沉積。在此實施例中,蝕刻室藉由每當電漿及被連接至台座上之RF偏壓係主動時(亦即在晶圓5之濺鍍作業期間)自此台座本身處濺鍍鈦或其他吸氣材料而被連續地調節。此濺鍍表面可如同第12圖中之周圍區域8般係成朝上,或在一徑向方向上。此型態之一優點在於其非常簡單。然而,缺點在於被蒸發自台座30處之吸氣材料量在一濺鍍作業期間無法獨立地被調整以便從一晶圓5處去除MeO沉積,此乃因為該台座之周圍區域8被經常地暴露在濺鍍電漿下。In another embodiment illustrated in Fig. 12, the pedestal 30 is similarly made of a getter material such as titanium, as in the embodiment discussed in Fig. 9. However, in this embodiment, the pedestal has a peripheral region 8 on its upper surface that extends radially outward from the guard ring 6 around the periphery of the wafer 5, which is not shielded by any dark areas. Protected, and thus open to plasma sputtering during the sputtering operation to remove MeO deposits from the wafer 5. In this embodiment, the etch chamber is sputtered with titanium or other from the pedestal itself whenever the plasma and the RF biasing system connected to the pedestal are active (ie, during the sputtering operation of the wafer 5). The getter material is continuously adjusted. This sputtered surface can be lined up as in the surrounding area 8 in Fig. 12, or in a radial direction. One of the advantages of this type is that it is very simple. However, a disadvantage is that the amount of getter material evaporated from the pedestal 30 cannot be independently adjusted during a sputtering operation to remove MeO deposits from a wafer 5 because the surrounding area 8 of the pedestal is frequently exposed. Under sputter plasma.

第13圖再說明另一實施例,其中台座30(或至少其一上方部分或其周壁32之上方部分)係由一諸如鈦之吸氣材料所製成或所塗敷。在此實施例中,遮蔽台座30之周壁的暗區屏蔽罩26相對於此台座之高度被縮短,藉此而露出此台座周壁32之上方末端部分。藉著這在蝕刻作業期間被暴露於電將下之台座周壁部分,此電漿將濺鍍來自該部分周壁32處之吸氣材料。原則上,在所示之實施例中,此吸氣材料被從周壁32之上方部分以一朝向已冷卻屏蔽罩28、50之徑向方向(如第13圖中之箭頭所示者)被濺鍍。此實施例之一優點在於:晶圓因吸氣材料所致之污染可藉由直徑較大於台座30者之保護環6而被避免。Another embodiment is illustrated in Fig. 13, wherein the pedestal 30 (or at least an upper portion thereof or an upper portion of the peripheral wall 32 thereof) is made of or coated with a getter material such as titanium. In this embodiment, the dark area shield 26 of the peripheral wall of the shield pedestal 30 is shortened relative to the height of the pedestal, thereby exposing the upper end portion of the pedestal peripheral wall 32. By this being exposed to the peripheral wall portion of the pedestal under the etch operation, the plasma will sputter the getter material from the peripheral wall 32 of the portion. In principle, in the illustrated embodiment, the getter material is splashed from the upper portion of the peripheral wall 32 in a radial direction toward the cooled shields 28, 50 (as indicated by the arrows in Figure 13). plating. An advantage of this embodiment is that contamination of the wafer by the getter material can be avoided by the guard ring 6 having a larger diameter than the pedestal 30.

雖然本發明已經針對某些較佳之實施例被敘述於上文中,但須理解的是本發明並不受限於這些被揭示於本文中作為範例且本質上不作為限定之實施例,而是將包含其所有修改及變化型式,其對於在本藝中具有一般技術之人士而言係可經由檢視以上所揭示之內容便可思及者,且係屬落在所附申請專利範圍中所界定之本發明的精神及範圍內者。Although the present invention has been described above with respect to certain preferred embodiments, it is to be understood that the invention is not to be construed as limited All modifications and variations thereof are apparent to those of ordinary skill in the art by reviewing the disclosures disclosed herein. The spirit and scope of the invention.

5...晶圓5. . . Wafer

6...保護環6. . . Protection ring

8...周圍區域8. . . Surrounding area

9...MeO層9. . . MeO layer

10...基板10. . . Substrate

12...金屬層12. . . Metal layer

13...接觸部/接觸區域13. . . Contact/contact area

14...絕緣層14. . . Insulation

16、18...接觸層/接觸體16, 18. . . Contact layer/contact

20...殼體20. . . case

22...線圈twenty two. . . Coil

24...氣體入口twenty four. . . Gas inlet

26、28...屏蔽罩26, 28. . . Shield

29...管道系統29. . . Pipeline system

30...台座30. . . Pedestal

32...周壁32. . . Zhou wall

35...電阻加熱線35. . . Resistance heating wire

40...壁40. . . wall

50...主動冷卻元件50. . . Active cooling element

52...吸氣材料52. . . Suction material

100...箭頭100. . . arrow

第1圖示意地說明在一圖案化晶圓5上所進行之濺鍍蝕刻作業,而晶圓5具有一可保護(諸)下方金屬層12之聚合絕緣層14。一電漿(圖中之氬Ar)被用來濺鍍該晶圓5以便去除金屬氧化物(MeO),而此諸金屬氧化物在下一個鋪設金屬接觸體16及18(如第2圖中所示意說明者)步驟進行之前,已先聚積在(諸)金屬層之諸外露接觸部13上。1 is a schematic illustration of a sputter etch operation performed on a patterned wafer 5 having a polymeric insulating layer 14 that protects the underlying metal layer 12. A plasma (argon Ar in the figure) is used to sputter the wafer 5 to remove metal oxide (MeO), and the metal oxides are laid in the next metal contacts 16 and 18 (as shown in Figure 2). It is illustrated that the steps have previously accumulated on the exposed contact portions 13 of the metal layer(s).

第2圖說明一濺鍍塗敷作業,其係在第1圖所示之步驟已完結後被執行於第1圖中之圖案化晶圓5上。在此步驟中,金屬接觸層16及18係經由來自適當金屬靶材之濺鍍而被鋪設。Fig. 2 illustrates a sputter coating operation which is performed on the patterned wafer 5 in Fig. 1 after the step shown in Fig. 1 has been completed. In this step, metal contact layers 16 and 18 are laid through sputtering from a suitable metal target.

第3-4圖示意地說明一感應耦合電漿蝕刻室,其可用以執行第1圖所示之濺鍍步驟,以便可於濺鍍作業期間在不同的時間點從一晶圓5處去除MeO沉積。Figures 3-4 schematically illustrate an inductively coupled plasma etch chamber that can be used to perform the sputtering step illustrated in Figure 1 to remove MeO from a wafer 5 at different points in time during a sputtering operation. Deposition.

第5a-d圖顯示在一與第3-4圖中所示者相類似並可供以氬(Ar)作為電漿源之典型蝕刻作業用之蝕刻室內所量測到之殘餘氣體譜。Figures 5a-d show the residual gas spectrum measured in an etch chamber for a typical etching operation using argon (Ar) as a plasma source, as shown in Figures 3-4.

第6圖顯示在一與第3-4圖中所示者相類似之蝕刻室中之氣體在一48秒之蝕刻作業期間的氣體譜,以便說明氣體濃度之依時變化。Figure 6 shows the gas spectrum during a 48 second etching operation of a gas in an etching chamber similar to that shown in Figures 3-4 to illustrate the time-dependent change in gas concentration.

第7圖顯示與第6圖中所示者相類似但卻針對一180秒之蝕刻作業的氣體譜。Fig. 7 shows a gas spectrum similar to that shown in Fig. 6 but for a 180 second etching operation.

第8圖示意地說明一如同第3-4圖中所示者之蝕刻室,但其具有一被安置成鄰接該台座並位於該室之基部處的主動冷卻元件。Figure 8 schematically illustrates an etch chamber as shown in Figures 3-4, but having an active cooling element positioned adjacent the pedestal and at the base of the chamber.

第9及11-13圖示意地說明一蝕刻室之各種不同實施例,而此蝕刻室在其基部處併合一主動冷卻元件。在一些實施例中,一吸氣劑昇華泵亦被併合以便在此蝕刻室中提供一吸氣材料源,其被結合該主動冷卻元件使用以便降低該室中之污染氣體(亦即由於電漿蝕刻而自聚合絕緣層14處所釋出之VCs及聚合物)的濃度。Figures 9 and 11-13 schematically illustrate various embodiments of an etch chamber that incorporates an active cooling element at its base. In some embodiments, a getter sublimation pump is also combined to provide a source of getter material in the etch chamber that is used in conjunction with the active cooling element to reduce contaminated gases in the chamber (ie, due to plasma The concentration of VCs and polymer released from the polymeric insulating layer 14 after etching.

第10圖係一顯示在蝕刻作業期間之依時殘餘氣體濃度的氣體譜,該蝕刻作業係在一鈦(Ti)吸氣基板上進行以便在蝕刻室中導引吸氣材料,而此被執行於一如第9圖中所示之蝕刻室中,如下文中將進一步敘述者。Figure 10 is a gas spectrum showing the residual gas concentration during the etching operation, which is performed on a titanium (Ti) getter substrate to guide the getter material in the etching chamber, and this is performed In an etching chamber as shown in Fig. 9, as will be further described below.

5...晶圓5. . . Wafer

20...殼體20. . . case

22...線圈twenty two. . . Coil

24...氣體入口twenty four. . . Gas inlet

26/28...屏蔽罩26/28. . . Shield

30...台座30. . . Pedestal

40...壁40. . . wall

50...主動冷卻元件50. . . Active cooling element

52...吸氣材料52. . . Suction material

100...箭頭100. . . arrow

Claims (26)

一種濺鍍蝕刻室,其包括:一入口,其可供導入可離子化氣體;一支撐表面,其係位於該室中並適於支撐一將在該室中被蝕刻之晶圓;及一主動冷卻元件,其係位於該室中與該支撐表面鄰接,其中該主動冷卻元件包括一位於該濺鍍蝕刻室之一基部處的暗區屏蔽罩。 A sputter etching chamber comprising: an inlet for introducing an ionizable gas; a support surface located in the chamber and adapted to support a wafer to be etched in the chamber; and an active a cooling element contiguous with the support surface in the chamber, wherein the active cooling element includes a dark area shield located at a base of one of the sputter etch chambers. 如申請專利範圍第1項之濺鍍蝕刻室,其另包括一至少部分地被配置在該室中之台座,而該支撐表面係該台座之一表面。 The sputter etching chamber of claim 1, further comprising a pedestal at least partially disposed in the chamber, the support surface being a surface of the pedestal. 如申請專利範圍第2項之濺鍍蝕刻室,其中該主動冷卻元件被安置成使得在蝕刻一擱在該支撐表面上之晶圓的期間,該冷卻元件會比該蝕刻室內除了該台座外之任何其他主要表面更靠近該晶圓。 The sputter etching chamber of claim 2, wherein the active cooling element is disposed such that during etching of a wafer resting on the support surface, the cooling element may be other than the pedestal in the etching chamber Any other major surface is closer to the wafer. 如申請專利範圍第1項之濺鍍蝕刻室,其中該暗區屏蔽罩係與適於載送冷卻流體的管道系統成熱接觸。 A sputter etching chamber according to claim 1, wherein the dark area shield is in thermal contact with a piping system adapted to carry a cooling fluid. 如申請專利範圍第1項之濺鍍蝕刻室,其中該主動冷卻元件係處於一在-50至+10℃範圍內之溫度下。 A sputter etching chamber according to claim 1, wherein the active cooling element is at a temperature in the range of -50 to +10 °C. 如申請專利範圍第1項之濺鍍蝕刻室,其中該主動冷卻元件係處於一在-20至+10℃範圍內之溫度下。 A sputter etching chamber according to claim 1 wherein the active cooling element is at a temperature in the range of -20 to +10 °C. 如申請專利範圍第1項之濺鍍蝕刻室,其中該主動冷卻元件係位於鄰近在該室的一基部的該台座之該支撐表面。 A sputter etching chamber according to claim 1, wherein the active cooling element is located adjacent to the support surface of the pedestal at a base of the chamber. 如申請專利範圍第1項之濺鍍蝕刻室,其另包括一位於該室中之吸氣劑昇華泵。 The sputtering etch chamber of claim 1, further comprising a getter sublimation pump located in the chamber. 如申請專利範圍第8項之濺鍍蝕刻室,其中該吸氣劑昇華泵包括一具有吸氣材料之電阻加熱線。 A sputtering etch chamber according to claim 8 wherein the getter sublimation pump comprises a resistive heating wire having a getter material. 如申請專利範圍第9項之濺鍍蝕刻室,其中該電阻加熱線係與該支撐表面相隔開,並相對於該支撐表面被同心地纏繞,該線在蝕刻作業期間被遮蔽以防被電漿濺鍍。 The sputter etching chamber of claim 9, wherein the electric resistance heating wire is spaced apart from the support surface and is concentrically wound with respect to the support surface, the wire being shielded from being plasma during the etching operation Sputtering. 如申請專利範圍第9項之濺鍍蝕刻室,其中該線以質量為基準名義上包括85%的鈦及15%的鉬。 A sputtering etch chamber as in claim 9 wherein the wire nominally comprises 85% titanium and 15% molybdenum on a mass basis. 如申請專利範圍第11項之濺鍍蝕刻室,其中該線具有2mm之直徑,並被連接至一可在40V電壓下運轉供給50A電流至該線之電源,以便在被供能時可自該線處蒸發鈦。 A sputtering etch chamber according to claim 11 wherein the wire has a diameter of 2 mm and is connected to a power supply capable of supplying 50 A of current to the line at a voltage of 40 V so as to be self-powered when energized. The titanium is evaporated at the line. 如申請專利範圍第8項之濺鍍蝕刻室,其另包括一被至少部分地配置在該室中之台座,該支撐表面係該台座之一表面,而該吸氣劑昇華泵則包括該台座的至少一部分,其係由吸氣材料所製成或被以吸氣材料塗敷。 The sputter etching chamber of claim 8 further comprising a pedestal at least partially disposed in the chamber, the support surface being a surface of the pedestal, and the getter sublimation pump including the pedestal At least a portion of which is made of a getter material or is coated with a getter material. 如申請專利範圍第1項之濺鍍蝕刻室,其另包括一層被沉積在該主動冷卻元件之一表面上的吸氣材料。 A sputter etching chamber according to claim 1, further comprising a getter material deposited on a surface of one of the active cooling elements. 一種濺鍍方法,其包括:(a)放置一晶圓,於如申請專利範圍第1項之濺鍍蝕刻室中的該支撐表面上,欲從該晶圓去除金屬氧化物沉積物;(b)將該主動冷卻元件冷卻至一在-50至+10℃範圍內之溫度;及(c)在該室中離子化一可離子化氣體,以便由此產生 電漿,而該電漿蝕刻該晶圓以去除金屬氧化物沉積物;其中相較於該室中之其他表面,因該蝕刻而導致從該晶圓處被釋出之揮發性化合物將被優先地吸附至該主動冷卻元件上,其中該主動冷卻元件包括一位於該濺鍍蝕刻室之一基部處的暗區屏蔽罩。 A sputtering method comprising: (a) placing a wafer on the support surface in a sputtering etch chamber of claim 1 to remove metal oxide deposits from the wafer; Cooling the active cooling element to a temperature in the range of -50 to +10 ° C; and (c) ionizing an ionizable gas in the chamber to thereby produce a plasma that etches the wafer to remove metal oxide deposits; wherein the volatile compounds released from the wafer are preferentially affected by the etching compared to other surfaces in the chamber The ground is adsorbed onto the active cooling element, wherein the active cooling element includes a dark area shield located at a base of one of the sputter etching chambers. 如申請專利範圍第15項之方法,其中該溫度係在-20至+10℃之範圍內。 The method of claim 15, wherein the temperature is in the range of -20 to +10 °C. 如申請專利範圍第15項之方法,其中該溫度係在-20至0℃之範圍內。 The method of claim 15, wherein the temperature is in the range of -20 to 0 °C. 如申請專利範圍第15項之方法,其中該主動冷卻元件係位於鄰近該室的一基部的該台座之該支撐表面。 The method of claim 15 wherein the active cooling element is located on the support surface of the pedestal adjacent a base of the chamber. 如申請專利範圍第15項之方法,其中該室另包括一具有吸氣材料之吸氣劑昇華泵,而該方法另包括:(d)濺鍍該吸氣劑昇華泵,以便由此蒸發吸氣材料並將其沉積在該主動冷卻元件上。 The method of claim 15, wherein the chamber further comprises a getter sublimation pump having a getter material, and the method further comprises: (d) sputtering the getter sublimation pump to thereby evaporate The gas material is deposited on the active cooling element. 如申請專利範圍第19項之方法,其包括:執行該等步驟(a)至(c)以便從一個晶圓去除金屬氧化物沉積物,隨後從該蝕刻室中移去該一個晶圓,並隨後在該蝕刻室內無晶圓之下執行該步驟(d),且隨後在該蝕刻室中插入另一晶圓,及在該另一晶圓上執行該等步驟(a)至(c)。 A method of claim 19, comprising: performing the steps (a) through (c) to remove metal oxide deposits from a wafer, and subsequently removing the wafer from the etch chamber, and This step (d) is then performed without wafers in the etch chamber, and then another wafer is inserted into the etch chamber, and the steps (a) through (c) are performed on the other wafer. 如申請專利範圍第19項之方法,其包括:重複執行該等步驟(a)至(c)以便從第一複數個連續晶圓去除金屬氧化物沉積物,隨後在該蝕刻室內無晶圓之下執行 該步驟(d),並隨後再次地重複執行該等步驟(a)至(c)以便從另一複數個連續晶圓去除金屬氧化物沉積物。 The method of claim 19, comprising: repeating the steps (a) through (c) to remove metal oxide deposits from the first plurality of continuous wafers, and subsequently waferless in the etching chamber Execution This step (d), and then repeating the steps (a) through (c) again, again removes metal oxide deposits from another plurality of consecutive wafers. 如申請專利範圍第15項之方法,其中該室另包括一具有吸氣材料之電阻加熱線,而該方法另包括:供給該線能量以便在執行該步驟(c)的期間可從該線蒸發吸氣材料。 The method of claim 15, wherein the chamber further comprises a resistive heating wire having a getter material, and the method further comprises: supplying the line energy to evaporate from the line during the performing of the step (c) Suction material. 如申請專利範圍第22項之方法,其中該線係依需求根據在蝕刻期間從該晶圓釋出之揮發性化合物的依時性量變曲線,被供能以便在執行該步驟(c)的期間可從該線蒸發吸氣材料。 The method of claim 22, wherein the line is energized according to demand according to a time-dependent curve of volatile compounds released from the wafer during etching so as to be performed during the step (c) The getter material can be evaporated from the line. 如申請專利範圍第15項之方法,其包括:執行該等步驟(a)至(c)以便從一個晶圓去除金屬氧化物沉積物,隨後從該蝕刻室中移去該一個晶圓,隨後插入一包括吸氣材料或以吸氣材料塗敷之吸氣基板,隨後電漿蝕刻該吸氣基板以便從該吸氣基板去除將被沉積在該蝕刻室中之諸內表面上的吸氣材料,並隨後在該蝕刻室中插入另一晶圓,且在該另一晶圓上執行該等步驟(a)至(c)。 A method of claim 15, comprising: performing the steps (a) through (c) to remove metal oxide deposits from a wafer, and subsequently removing the wafer from the etch chamber, followed by Inserting a getter substrate comprising a getter material or a getter material, and then plasma etching the getter substrate to remove getter material to be deposited on the inner surfaces of the etching chamber from the getter substrate And then inserting another wafer into the etch chamber and performing the steps (a) through (c) on the other wafer. 如申請專利範圍第15項之方法,其包括:重複執行該等步驟(a)至(c)以便從第一複數個連續晶圓處去除金屬氧化物沉積物,隨後在該蝕刻室中插入一包括吸氣材料或以吸氣材料塗敷之吸氣基板,隨後電漿蝕刻該吸氣基板以便從該吸氣基板去除將被沉積在該蝕刻室中之諸內表面上的吸氣材料,隨後從該蝕刻室處移除該吸氣基板,及隨後再次地重複執行該等步驟(a)至 (c)以便從第二複數個連續晶圓處去除金屬氧化物沉積物。 The method of claim 15, comprising: repeating the steps (a) to (c) to remove metal oxide deposits from the first plurality of consecutive wafers, and then inserting one in the etching chamber Including a getter material or a getter substrate coated with a getter material, and then plasma etching the getter substrate to remove getter material to be deposited on the inner surfaces of the etching chamber from the getter substrate, followed by Removing the getter substrate from the etching chamber, and then repeating the steps (a) to again (c) to remove metal oxide deposits from the second plurality of consecutive wafers. 如申請專利範圍第15項之方法,其中該支撐表面具有一外露之周圍區域,其係從在該步驟(c)的期間擱置在其上之該晶圓處徑向朝外地延伸,而該外圍區域則包括吸氣材料,其中電漿濺鍍在該步驟(c)的期間會從該支撐表面之該周圍區域處去除被沉積至該室內之其他表面上的吸氣材料。 The method of claim 15, wherein the support surface has an exposed surrounding area extending radially outward from the wafer on which it is placed during the step (c), and the periphery The region then includes a getter material, wherein the plasma sputter removes getter material deposited onto other surfaces of the chamber from the surrounding region of the support surface during the step (c).
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