TW201316588A - Materials supply device and deposition device - Google Patents

Materials supply device and deposition device Download PDF

Info

Publication number
TW201316588A
TW201316588A TW101121811A TW101121811A TW201316588A TW 201316588 A TW201316588 A TW 201316588A TW 101121811 A TW101121811 A TW 101121811A TW 101121811 A TW101121811 A TW 101121811A TW 201316588 A TW201316588 A TW 201316588A
Authority
TW
Taiwan
Prior art keywords
supply
vaporization
supply device
material supply
powder
Prior art date
Application number
TW101121811A
Other languages
Chinese (zh)
Inventor
Satoru Kawakami
Hirotaka Kuwada
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201316588A publication Critical patent/TW201316588A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/246Replenishment of source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A materials supply device which supplies a vaporized solid material, the device comprising: a vaporizing member which has a supply surface to which the solid material is supplied, and vaporizes the solid material, a powder material supply member which supplies the solid material in powder form onto the supply surface of the vaporizing member, a material dispersion member, which is attached to the powder material supply member such that a gap is formed with respect to the supply surface of the vaporizing member, and disperses the powdered solid material across the supply surface of the vaporizing member, and a transport mechanism which moves the vaporizing member relative to the material dispersing member.

Description

材料供給裝置及成膜裝置 Material supply device and film forming device

本發明之各層面及實施形態,係有關於用以進行例如有機EL元件之發光層之成膜的成膜裝置,以及在成膜裝置中供給材料的材料供給裝置。 Each aspect and embodiment of the present invention relates to a film forming apparatus for performing film formation of a light-emitting layer of an organic EL element, and a material supply device for supplying a material to a film forming apparatus.

近年來,開發出使用電致發光(EL:Electro Luminescence)之有機電致發光元件。有機電致發光元件的基本結構,係在玻璃基板上重疊陽極層、發光層及陰極層而形成之三明治結構。為了將發光層的光取出至外部,玻璃基板上的陽極層採用ITO(銦錫氧化物,Indium Tin Oxide)等所構成之透明電極。有機電致發光元件之製造,一般係在表面預先形成有ITO層(陽極層)之玻璃基板上,依序形成發光層與陰極層,再形成密封膜層。 In recent years, an organic electroluminescence device using electroluminescence (EL: Electro Luminescence) has been developed. The basic structure of the organic electroluminescence device is a sandwich structure formed by laminating an anode layer, a light-emitting layer, and a cathode layer on a glass substrate. In order to take out the light of the light-emitting layer to the outside, the anode layer on the glass substrate is a transparent electrode made of ITO (Indium Tin Oxide) or the like. The organic electroluminescence device is generally produced by forming a light-emitting layer and a cathode layer on a glass substrate having an ITO layer (anode layer) formed in advance on the surface thereof, and then forming a sealing film layer.

有機電致發光元件之發光層,一般係採用蒸鍍來成膜。有機材料係固體,透過材料供給裝置之加熱而汽化成材料氣體,供給至蒸鍍頭。在專利文獻1,揭示有一種成膜裝置,其具備:開閉式閥,係供給顆粒狀之有機材料的閘閥等;間隙部,係由可自由旋轉、昇降之蓋體及與該蓋體相向之凹面體之間所產生;定量部,調整間隙部的寬度;材料供給裝置,具有將粉末材料加以汽化的汽化構件。於該裝置,藉由開閉式閥之開閉而使所供給之顆粒狀的有機材料在間隙部被粉碎成粉末狀,再汽化粉末狀的有機材料。藉由控制間隙部的寬度、蓋體的旋轉速度及裝置內的壓差,以控制對汽化構件供給之有機材料的供給量。 The light-emitting layer of the organic electroluminescence device is generally formed by vapor deposition. The organic material is a solid, which is vaporized into a material gas by heating by a material supply device, and is supplied to the vapor deposition head. Patent Document 1 discloses a film forming apparatus including: an open-close type valve which is a gate valve for supplying a granular organic material; and a gap portion which is a cover body which is freely rotatable and liftable, and which faces the cover body Produced between the concave bodies; the quantitative portion adjusts the width of the gap portion; and the material supply device has a vaporization member that vaporizes the powder material. In this apparatus, the supplied granular organic material is pulverized into a powder form in the gap portion by opening and closing of the open/close valve, and the powdery organic material is vaporized. The amount of supply of the organic material supplied to the vaporization member is controlled by controlling the width of the gap portion, the rotational speed of the lid body, and the pressure difference in the device.

[習知技術文獻] [Practical Technical Literature] [專利文獻] [Patent Literature]

【專利文獻1】國際公開WO2010/123027號公報 [Patent Document 1] International Publication WO2010/123027

然而,現在需要能以更高的精度來調整汽化速度(速率)。於本技術區域,希望開發出能以更佳精度來調整固形有機材料之昇華、熔化速度的材料供給裝置及成膜裝置。 However, it is now necessary to be able to adjust the vaporization rate (rate) with higher precision. In the technical field, it has been desired to develop a material supply device and a film forming apparatus capable of adjusting the sublimation and melting speed of a solid organic material with better precision.

亦即,本發明之一層面的材料供給裝置,係將固體材料汽化並加以供給,包括:汽化構件,具有供給面以接受該固體材料之供給,而將該固體材料汽化;粉末材料供給構件,將粉末狀的該固體材料供給至該汽化構件之供給面上;材料分散構件,安裝於該粉末材料供給構件,配置成與該汽化構件的供給面之間產生間隙,將粉末狀之該固體材料分散至該汽化構件的供給面上;以及移動機構,相對於該材料分散構件而移動該汽化構件。 That is, the material supply device of one aspect of the present invention vaporizes and supplies the solid material, comprising: a vaporization member having a supply surface to receive the supply of the solid material, and vaporizing the solid material; the powder material supply member, The powdery solid material is supplied to the supply surface of the vaporization member; the material dispersion member is attached to the powder material supply member, and is disposed to form a gap with the supply surface of the vaporization member, and the powdery solid material is formed Dispersing onto the supply surface of the vaporization member; and moving the mechanism to move the vaporization member relative to the material dispersion member.

於本發明之一層面的材料供給裝置,由粉末材料供給構件對汽化構件之供給面供給粉末狀之固體材料,藉由移動機構使汽化構件相對於材料分散構件移動。藉由移動供給面側,可更進一步擴散粉末材料。又,安裝於粉末材料供給構件之材料分散構件與汽化構件之間的間隙,使得固體材料以相當於間隙寬度之厚度擴散。如此一來,可藉由間隙而以良好之精度調整有機材料之昇華、熔化的速度。 In the material supply device of one aspect of the invention, the powder material supply member supplies the powdery solid material to the supply surface of the vaporization member, and the vaporization member moves relative to the material dispersion member by the moving mechanism. By moving the supply side, the powder material can be further diffused. Further, a gap is provided between the material dispersion member of the powder material supply member and the vaporization member, so that the solid material is diffused by a thickness corresponding to the gap width. In this way, the sublimation and melting speed of the organic material can be adjusted with good precision by the gap.

於本發明之一實施形態,該材料分散構件,亦可具有中空結構。藉由形成如此之結構,使收納於材料分散構件內部的粉末材料,能平均地遍佈於與汽化構件之間的全體間隙,故可以妥善地分散。 In an embodiment of the invention, the material dispersion member may have a hollow structure. By forming such a structure, the powder material accommodated in the material dispersion member can be evenly distributed over the entire gap between the vaporization member and the like, so that it can be properly dispersed.

發明之一實施形態,該材料分散構件亦可具有相對於該供給面昇降之昇降機構。藉由形成如此之結構,可以變更間隙之寬度,因此可以變更粉末材料之厚度。 According to an embodiment of the invention, the material dispersion member may have an elevating mechanism that moves up and down with respect to the supply surface. By forming such a structure, the width of the gap can be changed, so that the thickness of the powder material can be changed.

於本發明之一實施形態,該汽化構件亦可配置成該供給面為頂面。藉由形成如此之結構,可利用重力而對供給面供給固體材料。 In an embodiment of the invention, the vaporization member may be arranged such that the supply surface is a top surface. By forming such a structure, the solid material can be supplied to the supply surface by gravity.

於本發明之一實施形態,該汽化構件,亦可為多孔質材料所構成之圓板構件,其中一方之主面形成為汽化面。藉由形成如此之結構,在頂面側汽化而產生之氣體可穿過圓板構件,因此所產生之氣體可由汽化構件之底面側輸送出去。又,由於熔化後的材料可穿過多孔質的汽化構件,故亦可以底面側作為汽化面。 In an embodiment of the present invention, the vaporization member may be a circular plate member made of a porous material, and one of the main faces is formed as a vaporization surface. By forming such a structure, the gas generated by vaporization on the top surface side can pass through the disk member, so that the generated gas can be transported out from the bottom side of the vaporization member. Further, since the melted material can pass through the porous vaporization member, the bottom surface side can also be used as the vaporization surface.

於本發明之一實施形態,該汽化構件,亦可於供給面形成溝槽。藉由形成如此之結構,可在供給面與材料分散構件之間設置間隙,因此藉由使供給面與材料分散構件之間變狹窄,而可將填充於溝槽之量當作是粉末材料之供給量來設定。因此,可以固定粉末材料之供給量。 In an embodiment of the invention, the vaporization member may form a groove on the supply surface. By forming such a structure, a gap can be provided between the supply surface and the material dispersion member, so that the amount filled in the groove can be regarded as a powder material by narrowing the supply surface and the material dispersion member. The amount of supply is set. Therefore, the supply amount of the powder material can be fixed.

於本發明之一實施形態,該移動機構,亦可旋轉該汽化構件。該移動機構,亦可係以連接於該汽化構件之桿體作為旋轉軸,而旋轉該汽化構件。藉由形成如此之結構,可以在汽化構件之整面分散粉末構件。 In an embodiment of the invention, the moving mechanism can also rotate the vaporization member. The moving mechanism may also rotate the vaporization member by using a rod connected to the vaporization member as a rotating shaft. By forming such a structure, the powder member can be dispersed over the entire surface of the vaporization member.

於本發明之一實施形態,該粉末材料供給構件,亦可具有從該汽化構件之旋轉軸位移之軸線。亦可係於該材料分散構件中,由連接該粉末材料供給構件之一端、與形成該間隙之端部所連結而成之面,係沿著該汽化構件之旋轉方向彎曲之面。 In an embodiment of the present invention, the powder material supply member may have an axis that is displaced from a rotational axis of the vaporization member. Further, the material dispersing member may be a surface that is connected to one end of the powder material supply member and joined to an end portion where the gap is formed, and is curved along a direction in which the vaporization member rotates.

於本發明之一實施形態,亦可具備加熱器,其配置於該汽化構件之下方,用以加熱該汽化構件。藉由形成如此之結構,可以使粉末材料妥善地汽化。 In an embodiment of the present invention, a heater may be disposed under the vaporization member for heating the vaporization member. By forming such a structure, the powder material can be properly vaporized.

於本發明之一實施形態,亦可係該移動機構使該汽化構件旋轉,而該加熱器,配置於從該材料分散構件之配置位置,沿著該汽化構件之旋轉軸的旋轉方向約略轉半圈之位置。藉由形成如此之結構,可以在加熱區域與材料投入區域之間設置溫度差,因此可以減少投入時之汽化。故而可以達成材料投入量之定量化。 In an embodiment of the present invention, the moving mechanism may rotate the vaporization member, and the heater is disposed at a position from the material dispersing member, and is rotated approximately halfway along a rotation direction of the rotating member of the vaporizing member. The position of the circle. By forming such a structure, a temperature difference can be set between the heating region and the material input region, so that vaporization at the time of input can be reduced. Therefore, the amount of material input can be quantified.

於本發明之一實施形態,亦可進一步具備將該固體材料供給至該粉末材料供給構件的供給部,該供給部,係一殼體,並藉由內壁而區劃出朝向下端逐漸變窄之圓錐形狀的下空間,於該下空間之最下方,形成有落下孔,使粉末狀之該固體材料落下,並具有從該落下孔沿著該內壁而往上方延伸,同時往內側彎折的線狀構件。藉由形成如此之結構,可以藉由線狀構件去除附著於壁面等的固體材料。 According to an embodiment of the present invention, the solid material may be further supplied to the supply unit of the powder material supply member, and the supply portion may be a casing and may be narrowed toward the lower end by the inner wall. a lower space of the conical shape, at the bottom of the lower space, a drop hole is formed to drop the powdery solid material, and has a downward direction extending from the drop hole along the inner wall while being bent inward Linear member. By forming such a structure, the solid material adhering to the wall surface or the like can be removed by the linear member.

於本發明之一實施形態,該供給部亦可為可抽真空的結構。於抽真空之情形,由於固體材料更易附著於壁面等,所以可以成為更進一步發揮線狀構件之作用效果的結構。 In an embodiment of the invention, the supply portion may be a vacuum-removable structure. In the case of vacuuming, since the solid material is more likely to adhere to the wall surface or the like, it is possible to further exert the effect of the action of the linear member.

於本發明之一實施形態,亦可為該供給部具有:定量部,其具有上方突出之圓錐形狀的蓋體、與該蓋體之頂面對向設置之圓錐形狀的凹面體、以及使該蓋體與該凹面體相對旋轉的旋轉機構;材料投入機構,對該定量部投入材料;以及昇降機構,可自由變更該蓋體與該凹面體之間的間隙;在該材料投入機構的下游側且係該定量部之上游側之處,藉由內壁而區劃出上空間,在該上空間的最下部,形成有使該固體材料落下之落下孔,並具有線 狀構件,其從該落下孔沿著內壁往上方延伸,同時朝向內側彎折。藉由形成如此之結構,可以攪拌供給至定量部之前的顆粒狀固體材料,或是攪拌由定量部所產生之粉末狀的固體材料。 In an embodiment of the present invention, the supply unit may include a quantitative portion having a conical cover body that protrudes upward, a conical shape that is conical with the top of the cover, and the concave portion a rotating mechanism for rotating the lid body relative to the concave body; a material input mechanism for inserting material into the quantitative portion; and a lifting mechanism for freely changing a gap between the lid body and the concave surface; and downstream of the material input mechanism And the upstream side of the quantitative portion, the upper space is partitioned by the inner wall, and the lowermost hole of the upper space is formed with a falling hole for dropping the solid material, and has a line A member that extends upward from the drop hole along the inner wall while being bent toward the inner side. By forming such a structure, the particulate solid material supplied to the quantitative portion can be stirred or the powdery solid material produced by the quantitative portion can be stirred.

於本發明之一實施形態,亦可該材料投入機構,係由材料導入部及材料投入部所構成,該材料導入部導入材料且可抽成真空,該材料投入部將所導入之材料投入至該材料供給裝置且可抽成真空;該材料導入部與該材料投入部係透過閘閥連接。藉由形成如此之結構,即使係在真空下亦可妥善地投入材料。 In one embodiment of the present invention, the material introduction mechanism may be configured by a material introduction portion and a material input portion, and the material introduction portion may introduce a material and evacuate the vacuum, and the material input portion may introduce the introduced material into the material. The material supply device can be evacuated; the material introduction portion and the material input portion are connected to each other through a gate valve. By forming such a structure, the material can be properly placed even under vacuum.

又,本發明之另一層面的成膜裝置,具備上述之材料供給裝置,並將固體材料汽化並成膜,其結構包括:材料供給裝置,將該固體材料汽化;以及成膜部,導入該材料供給裝置所供給之材料並成膜;該材料供給裝置,包括:汽化構件,具有供給面以接受該固體材料之供給,而將該固體材料汽化;粉末材料供給構件,將粉末狀的該固體材料供給至該汽化構件之供給面上;材料分散構件,安裝於該粉末材料供給構件,配置成與該汽化構件的供給面之間產生間隙,將粉末狀之該固體材料分散至該汽化構件的供給面上;以及移動機構,相對於該材料分散構件而移動該汽化構件。 Further, a film forming apparatus according to another aspect of the present invention includes the material supply device described above, and vaporizes and forms a solid material, the structure comprising: a material supply device that vaporizes the solid material; and a film forming portion that is introduced into the film The material supplied from the material supply device is formed into a film; the material supply device includes: a vaporization member having a supply surface to receive the supply of the solid material to vaporize the solid material; and a powder material supply member to which the solid is powdery a material is supplied to the supply surface of the vaporization member; a material dispersion member is attached to the powder material supply member, and a gap is formed between the supply surface and the supply surface of the vaporization member, and the powdery solid material is dispersed to the vaporization member. And a moving mechanism that moves the vaporization member relative to the material dispersion member.

本發明之另一層面的成膜裝置,具有與上述材料供給裝置相同的效果。 The film forming apparatus of another aspect of the present invention has the same effects as the material supply apparatus described above.

根據本發明之各層面及實施形態,能以更高的精度調整固形之有機材料的昇華、熔化速度。 According to each aspect and embodiment of the present invention, the sublimation and melting speed of the solid organic material can be adjusted with higher precision.

以下,參照圖式以說明實施形態。又,於本說明書及圖式中,對於實質上具有相同功能結構的構成要件,標註相同符號,以省略重複說明。 Hereinafter, embodiments will be described with reference to the drawings. In the present specification and the drawings, the components that have substantially the same functional configuration are denoted by the same reference numerals, and the description thereof will not be repeated.

圖1係有機電致發光元件A之製造工程的說明圖,該有機電致發光元件A係藉由本實施形態之成膜裝置1等所製造的元件(有機電致發光元件、太陽電池等)之一例。如圖1(a)所示,準備頂面已成膜有陽極層10的基板G。基板G例如係由玻璃等構成之透明材料所製造。又,陽極層10係由ITO(Indium Tin Oxide)等透明之導電性材料所構成。又,陽極層10係例如以濺鍍法等方式形成於基板G的頂面。 FIG. 1 is an explanatory view of a manufacturing process of the organic electroluminescence device A, which is an element (organic electroluminescence device, solar cell, etc.) manufactured by the film formation apparatus 1 of the present embodiment or the like. An example. As shown in Fig. 1(a), a substrate G on which the anode layer 10 has been formed on the top surface is prepared. The substrate G is made of, for example, a transparent material made of glass or the like. Further, the anode layer 10 is made of a transparent conductive material such as ITO (Indium Tin Oxide). Further, the anode layer 10 is formed on the top surface of the substrate G by sputtering or the like, for example.

首先,如圖1(a)所示,於陽極層10上,藉由蒸鍍法等,使包含發光層的有機層11成膜。又,有機層11例如係疊層了電洞注入層、電洞輸送層、非發光層(電子阻礙層(electron blocking layer))、藍色發光層、紅色發光層、綠色發光層、電子輸送層、電子注入層之多層結構所構成。 First, as shown in FIG. 1(a), the organic layer 11 including the light-emitting layer is formed on the anode layer 10 by a vapor deposition method or the like. Further, the organic layer 11 is formed by, for example, a hole injection layer, a hole transport layer, a non-light-emitting layer (electron blocking layer), a blue light-emitting layer, a red light-emitting layer, a green light-emitting layer, and an electron transport layer. And the multilayer structure of the electron injection layer is formed.

接著,如圖1(b)所示,於有機層11上,藉由例如使用光罩之濺鍍來形成例如由Ag、Al等構成之陰極層12。 Next, as shown in FIG. 1(b), a cathode layer 12 made of, for example, Ag, Al, or the like is formed on the organic layer 11 by, for example, sputtering using a photomask.

接著,如圖1(c)所示,以陰極層12為光罩,對有機層11藉由例如乾蝕刻等方式,以使有機層11圖案化。 Next, as shown in FIG. 1(c), the cathode layer 12 is used as a mask, and the organic layer 11 is patterned by, for example, dry etching on the organic layer 11.

接著,如圖1(d)所示,以包覆有機層11及陰極層12的周圍,以及陽極層10的露出部分的方式,形成例氮化矽(SiN)所構成之絶緣性的密封膜層13。該密封膜層13之形成,係以例如μ波電漿化學汽相沈積法(CVD法)所進行。 Next, as shown in FIG. 1(d), an insulating sealing film made of yttrium nitride (SiN) is formed so as to cover the periphery of the organic layer 11 and the cathode layer 12 and the exposed portion of the anode layer 10. Layer 13. The formation of the sealing film layer 13 is carried out, for example, by a microwave plasma chemical vapor deposition method (CVD method).

如此所製造之有機電致發光元件A,藉由對陽極層10與陰極 層12之間施加電壓,而得以發光。有機電致發光元件A,可用於顯示裝置或平面發光元件(照明、光源等),此外,亦可用於各種電子機器。 The organic electroluminescent element A thus produced by the anode layer 10 and the cathode A voltage is applied between the layers 12 to emit light. The organic electroluminescent element A can be used for a display device or a planar light-emitting element (illumination, light source, etc.), and can also be used in various electronic devices.

接下來,針對本實施形態之成膜裝置1的結構,加以說明。以下為易於理解,因此所說明之成膜裝置,係具有1個對基板G噴射有機材料氣體的蒸鍍頭。圖2係顯示成膜裝置1之結構的概略圖。 Next, the configuration of the film forming apparatus 1 of the present embodiment will be described. The film forming apparatus described above has a vapor deposition head that ejects an organic material gas to the substrate G, as will be easily understood. FIG. 2 is a schematic view showing the structure of the film forming apparatus 1.

如圖2所示,成膜裝置1具備:蒸鍍裝置(成膜部)15,在基板G形成薄膜;以及材料供給裝置30,將用於成膜之材料氣體供給至蒸鍍裝置15。蒸鍍裝置15具備:用以進行成膜處理之第1腔體20、第2腔體21、以及蒸鍍頭22。第2腔體21,設於第1腔體20之下方。第2腔體21及第1腔體20,係於內部區劃出空間。蒸鍍頭22,跨越第1腔體20與第2腔體21間並配置於該等腔體之內部中。第2腔體21之內部,設有支持台23,其以基板G之成膜面朝上的狀態(face-up的狀態)支持基板G。在此,蒸鍍頭22設置成蒸鍍頭22的材料氣體噴射面與基板G的頂面(成膜面)相對。又,第1腔體20透過排氣管25a而與真空泵26a連通,第2腔體21透過排氣管25b而與真空泵26b連通,並於成膜時被抽真空。 As shown in FIG. 2, the film forming apparatus 1 includes a vapor deposition device (film formation portion) 15 that forms a film on the substrate G, and a material supply device 30 that supplies a material gas for film formation to the vapor deposition device 15. The vapor deposition device 15 includes a first cavity 20, a second cavity 21, and a vapor deposition head 22 for performing a film formation process. The second cavity 21 is provided below the first cavity 20. The second cavity 21 and the first cavity 20 define a space in the internal area. The vapor deposition head 22 is disposed between the first cavity 20 and the second cavity 21 and disposed inside the cavity. Inside the second cavity 21, a support base 23 is provided which supports the substrate G in a state in which the film formation surface of the substrate G faces upward (face-up state). Here, the vapor deposition head 22 is disposed such that the material gas ejection surface of the vapor deposition head 22 faces the top surface (film formation surface) of the substrate G. Further, the first cavity 20 communicates with the vacuum pump 26a through the exhaust pipe 25a, and the second cavity 21 communicates with the vacuum pump 26b through the exhaust pipe 25b, and is evacuated at the time of film formation.

又,材料供給裝置30,具備控制部30a、供給部30b、以及材料氣體產生部30c。控制部30a,具有控制供給部30b之各構件的結構。供給部30b,具有對材料氣體產生部30c供給有機材料(固體材料)的結構。材料氣體產生部30c,具有將有機材料汽化並導入蒸鍍裝置15的結構。材料氣體產生部30c,與材料導入路31連通,該材料導入路31係將材料氣體導入到蒸鍍頭22。亦即,從供給部30b對材料氣體產生部30c供給固形的有機材料,在材料氣體產生部30c產生材料氣體,而在材料氣體產生部30c所產生的 材料氣體被導入到蒸鍍頭22,而由蒸鍍頭22對基板G噴射材料氣體。又,材料導入路31設有閥33,其可在有無對蒸鍍頭22導入材料氣體間作切換。在材料導入路31,材料氣體產生部30c與閥33之間,設有材料退避路34,其與真空泵26a連通,並具有開閉自如的閥35。又,蒸鍍頭22設有管流路36,其與真空泵26a連通,並具有開閉自如的閥37。 Further, the material supply device 30 includes a control unit 30a, a supply unit 30b, and a material gas generation unit 30c. The control unit 30a has a structure for controlling each member of the supply unit 30b. The supply unit 30b has a structure in which an organic material (solid material) is supplied to the material gas generating unit 30c. The material gas generating portion 30c has a structure in which an organic material is vaporized and introduced into the vapor deposition device 15. The material gas generating portion 30c communicates with the material introduction path 31, and the material introduction path 31 introduces the material gas into the vapor deposition head 22. That is, the solid material is supplied from the supply unit 30b to the material gas generating unit 30c, and the material gas is generated in the material gas generating unit 30c, and is generated in the material gas generating unit 30c. The material gas is introduced into the vapor deposition head 22, and the material gas is ejected from the vapor deposition head 22 to the substrate G. Further, the material introduction path 31 is provided with a valve 33 for switching between the presence or absence of the introduction of the material gas into the vapor deposition head 22. A material retracting path 34 is provided between the material gas generating portion 30c and the valve 33 in the material introduction path 31, and communicates with the vacuum pump 26a, and has a valve 35 that is openable and closable. Further, the vapor deposition head 22 is provided with a tube flow path 36 that communicates with the vacuum pump 26a and has a valve 37 that is openable and closable.

又,於蒸鍍頭22的兩側部位,以及第2腔體21的兩側部位,設有可透射光線的窗體39。第2腔體21之外部設有蒸氣量測定器38,其可使光線透射過該等窗體39,而以例如傅利葉轉換型紅外線分光法(FTIR)等方式,調查蒸鍍頭22內的材料氣體之蒸氣量。 Further, a light-transmissive window 39 is provided on both sides of the vapor deposition head 22 and on both sides of the second cavity 21. A vapor amount measuring device 38 is disposed outside the second cavity 21, and the light is transmitted through the windows 39, and the material in the vapor deposition head 22 is investigated by, for example, Fourier transform infrared spectroscopy (FTIR). The amount of gas vapor.

圖3為圖2之材料供給裝置30之放大圖,以下一邊參考該圖3,一邊說明本實施形態之材料供給裝置30之結構。 Fig. 3 is an enlarged view of the material supply device 30 of Fig. 2, and the structure of the material supply device 30 of the present embodiment will be described below with reference to Fig. 3 .

供給部30b,係內部區劃有空間之殼體,其結構使固體之有機材料可由裝置外部導入裝置內部加工,並供給至材料氣體產生部30c;其具備:真空預備式(load lock)的材料投入機構40,係進行顆粒狀之有機材料之投入;第1攪拌部42,將材料投入機構40所投入之顆粒狀之有機材料加以攪拌;定量部70,將每一份定量之顆粒狀有機材料粉碎成粉末狀;第2攪拌部71,將定量部70所處理過之粉末狀之有機材料加以攪拌;落下通路72,係由第2攪拌部71對材料氣體產生部30c供給粉末材料。 The supply portion 30b is a housing having a space inside, and is configured such that the solid organic material can be processed from the inside of the device external introduction device and supplied to the material gas generating portion 30c; it is provided with: a material load of a load lock The mechanism 40 is configured to perform the injection of the particulate organic material; the first agitating portion 42 agitates the granular organic material introduced by the material input mechanism 40; and the quantitative portion 70 pulverizes each of the quantitative particulate organic materials. The second agitating portion 71 agitates the powdery organic material treated by the quantitative portion 70, and drops the passage 72 to supply the powder material to the material gas generating portion 30c by the second agitating portion 71.

材料投入機構40,具備可將有機材料由裝置外部導入到裝置內部的機構。材料投入機構40與第1攪拌部42連通。材料投入機構40,具備例如導入材料之料導入部,以及將所導入之材料投入至第1攪拌部42的材料投入部。材料導入部及材料投入部構成為可抽真空,透過閘閥而連接。因此,即使材料導入部係處於對大氣開放之情況下,只要關閉閘閥,就可保持材料投入部之真空 度。所以不需停止裝置,就可以從裝置外部對裝置內部導入材料。 The material input mechanism 40 is provided with a mechanism that can introduce an organic material into the interior of the apparatus from the outside of the apparatus. The material input mechanism 40 is in communication with the first agitating portion 42. The material input mechanism 40 includes, for example, a material introduction portion that introduces a material, and a material input portion that feeds the introduced material to the first agitating portion 42. The material introduction portion and the material input portion are configured to be evacuated and connected through a gate valve. Therefore, even if the material introduction portion is open to the atmosphere, the vacuum of the material input portion can be maintained by closing the gate valve. degree. Therefore, it is possible to introduce materials from the outside of the device without stopping the device.

與材料投入機構40連通之第1攪拌部42,係由供給部30b之內壁區劃出的空間(上空間),其形成為朝下端逐漸變窄的圓錐形。該空間係區劃在材料投入機構40之下游側,且係在定量部70之上游側。於第1攪拌部42之最下方,設置著令有機材料落下之落下孔43。又,攪拌器41係一線狀構件,從落下孔43沿著第1攪拌部42之內壁往上方延伸,同時朝內側彎折。攪拌器41呈約略三角形地朝內側彎折2次。在此,攪拌器41連結於材料供給裝置30內部所設的雙軸中位於外側的旋轉筒44,而旋轉筒44上方設有帶輪45a。又,控制部30a之上方所設的旋轉機構50,其下方隔著旋轉軸46而設有帶輪45b,該帶輪45a與帶輪45b之間,拉伸有帶體47。藉此,旋轉機構50之旋轉動力傳動到旋轉筒44,使攪拌器41在第1攪拌部42之內部旋轉。再者,於旋轉筒44之外周設有複數個攪拌器41。如此這般,藉由攪拌器41的旋轉,而將投入至第1攪拌部42的有機材料加以攪拌。 The first agitating portion 42 that communicates with the material input mechanism 40 is a space (upper space) defined by the inner wall region of the supply portion 30b, and is formed in a conical shape that gradually narrows toward the lower end. This space is zoned on the downstream side of the material input mechanism 40 and is on the upstream side of the quantitative section 70. At the lowermost portion of the first agitating portion 42, a dropping hole 43 for dropping the organic material is provided. Moreover, the agitator 41 is a linear member, and extends upward from the falling hole 43 along the inner wall of the first agitating portion 42, and is bent inward. The agitator 41 is bent twice inwardly in a roughly triangular shape. Here, the agitator 41 is coupled to a rotating cylinder 44 located outside the biaxial shaft provided inside the material supply device 30, and a pulley 45a is provided above the rotating cylinder 44. Further, the rotation mechanism 50 provided above the control unit 30a is provided with a pulley 45b under the rotation shaft 46, and a belt body 47 is stretched between the pulley 45a and the pulley 45b. Thereby, the rotational power of the rotating mechanism 50 is transmitted to the rotating cylinder 44, and the agitator 41 is rotated inside the first agitating portion 42. Further, a plurality of agitators 41 are provided on the outer circumference of the rotary cylinder 44. In this manner, the organic material introduced into the first agitating portion 42 is stirred by the rotation of the agitator 41.

又,第1攪拌部42的兩側安裝有加熱器52,成為可控制第1攪拌部42之溫度的結構。又,藉由磁性流體密封件49,使第1攪拌部42相對材料供給裝置30的上方部分(控制部30a)密封。磁性流體密封件49,係在旋轉筒44及配置於其內側之軸61(容後詳述)的2個旋轉軸可旋轉自如的狀態下加以密封。藉由真空泵55,而將第1攪拌部42的內部抽成真空,藉由氣體導入器57而將例如氬氣等之載體氣體加以導入。 Further, the heater 52 is attached to both sides of the first agitating portion 42, and the temperature of the first agitating portion 42 can be controlled. Further, the first agitating portion 42 is sealed to the upper portion (control portion 30a) of the material supply device 30 by the magnetic fluid seal 49. The magnetic fluid seal 49 is rotatably sealed in a state in which the two rotating shafts of the rotating cylinder 44 and the shaft 61 disposed on the inside thereof (described later in detail) are rotatably provided. The inside of the first agitating portion 42 is evacuated by the vacuum pump 55, and a carrier gas such as argon gas is introduced by the gas introducer 57.

於第1攪拌部42之下方,設有位處落下孔43下方且上部突出之圓錐形蓋體60。蓋體60係由設在蓋體60之上方的旋轉筒44所支持。亦即,藉由旋轉筒44之支持,蓋體60可旋轉自如。又,於控制部30a之上方設有昇降機構65。昇降機構65使包含旋轉機構62、軸61、旋轉筒44、以及蓋體60在內的控制部30a加以昇 降。在此,由於昇降機構65的昇降會帶動控制部30a昇降,所以針對昇降機構65所帶動的昇降距離,係以安裝於控制部30a的例如測微計(micrometer)等量測器66來量測。 Below the first agitating portion 42, a conical cover 60 that protrudes below the falling hole 43 and protrudes upward is provided. The cover 60 is supported by a rotating cylinder 44 provided above the cover 60. That is, the cover 60 is rotatable by the support of the rotary cylinder 44. Further, an elevating mechanism 65 is provided above the control unit 30a. The elevating mechanism 65 raises the control unit 30a including the rotating mechanism 62, the shaft 61, the rotating cylinder 44, and the cover 60. drop. Here, since the elevation of the elevating mechanism 65 causes the control unit 30a to move up and down, the elevating distance that the elevating mechanism 65 drives is measured by a measuring device 66 such as a micrometer attached to the control unit 30a. .

於蓋體60之上方部分附近設有圓錐形的凹面體63,其設置成與蓋體60之頂面相向。藉由蓋體60之昇降,蓋體60與凹面體63之間所產生之間隙部64的寬度會變化。亦即,間隙部64之寬度的變化,會由量測器66量測。又,定量部70,具備蓋體60及凹面體63而構成,係藉由旋轉機構及昇降機構,而使其蓋體60會旋轉、昇降,且間隙部64的寬度會變化之部分。旋轉機構係使蓋體60與凹面體63相對旋轉。 A conical concave body 63 is provided in the vicinity of the upper portion of the cover 60, and is disposed to face the top surface of the cover 60. The width of the gap portion 64 generated between the lid body 60 and the concave body 63 changes by the elevation of the lid body 60. That is, the change in the width of the gap portion 64 is measured by the measuring device 66. Further, the quantitative portion 70 includes a lid body 60 and a concave surface 63, and the lid body 60 is rotated and raised by the rotation mechanism and the elevating mechanism, and the width of the gap portion 64 is changed. The rotating mechanism rotates the lid 60 and the concave body 63 relative to each other.

於定量部70之下方,形成有倒錐狀的第2攪拌部71。第2攪拌部71,係朝下端逐漸變窄的圓錐形空間(下空間),於第2攪拌部71之最下方,設置著令有機材料落下之落下通路72。第2攪拌部71備有攪拌器48。攪拌器48,係線狀構件,從落下通路72上端沿著第2攪拌部71之內壁而往上方延伸,同時朝內側彎折。攪拌器48呈約略三角形地朝內側彎折2次。在此,攪拌器48連結於材料供給裝置30內部所設的雙軸中位於內側之軸61。軸61透過結合構件61’而由上下2個軸61a及軸61b所構成。軸61a之上方,安裝有例如旋轉用馬達等旋轉機構62,使軸61可旋轉自如。亦即,攪拌器48藉由連結於軸61,而可旋轉自如。又,於軸61b之外周設有複數個攪拌器48。因此,藉由攪拌器48的旋轉,而將投入至第2攪拌部71的有機材料加以攪拌。又,第2攪拌部71連通有氣體導入器57,而將例如氬氣等之載體氣體加以導入,其壓力係藉由壓力計73而量測。又,於落下通路72之兩側,安裝有加熱器52,以進行溫度控制。在此,於落下通路72,亦可賦予其溫度差,使定量部70側之溫度較低,而材料氣體生成部30c側之溫度較高。 Below the quantitative portion 70, a second agitating portion 71 having an inverted tapered shape is formed. The second agitating portion 71 is a conical space (lower space) that gradually narrows toward the lower end, and a drop passage 72 that allows the organic material to fall is provided at the lowermost portion of the second agitating portion 71. The second stirring unit 71 is provided with a stirrer 48. The agitator 48, which is a linear member, extends upward from the upper end of the drop passage 72 along the inner wall of the second agitating portion 71, and is bent toward the inner side. The agitator 48 is bent twice inwardly in a roughly triangular shape. Here, the agitator 48 is coupled to the shaft 61 located inside the biaxial shaft provided inside the material supply device 30. The shaft 61 is configured by the upper and lower shafts 61a and 61b through the coupling member 61'. Above the shaft 61a, a rotation mechanism 62 such as a rotation motor is attached to rotate the shaft 61. That is, the agitator 48 is rotatable by being coupled to the shaft 61. Further, a plurality of agitators 48 are provided on the outer circumference of the shaft 61b. Therefore, the organic material introduced into the second agitating portion 71 is stirred by the rotation of the agitator 48. Further, the second agitating portion 71 is connected to the gas introducer 57, and a carrier gas such as argon gas is introduced, and the pressure is measured by a pressure gauge 73. Further, heaters 52 are attached to both sides of the drop passage 72 for temperature control. Here, the temperature difference may be given to the drop passage 72 so that the temperature on the side of the quantitative portion 70 is low, and the temperature on the side of the material gas generating portion 30c is high.

如上所述,作為載體氣體,將氬氣從氣體導入器57導入至第1攪拌部42,對於定量部70及第2攪拌部71也同樣地導入載體氣體。第1攪拌部42與第2攪拌部71之載體氣體之壓力差成為一項要因,使粉末狀之有機材料從定量部70落下。 As described above, argon gas is introduced into the first agitating portion 42 from the gas introduction device 57 as a carrier gas, and the carrier gas is introduced in the same manner for the quantitative portion 70 and the second agitating portion 71. The pressure difference between the carrier gas of the first agitating portion 42 and the second agitating portion 71 is a factor, and the powdery organic material is dropped from the quantitative portion 70.

從材料投入機構40投入充分的有機材料時,間隙部64之寬度、蓋體60之旋轉速度、攪拌部42與第2攪拌部71之壓力差這3項要因,決定了由第1攪拌部42落下至第2攪拌部71之有機材料的落下量。上述3個要因,可藉由昇降機構65、旋轉機構50、氣體導入器57來控制,因此從定量部70落下之粉末狀之有機材料的量,可定量為所需要的量。又,藉由使導入至攪拌部42與第2攪拌部71之載體氣體的壓力相等,消除攪拌部42與第2攪拌部71間的壓差,就可以僅藉由控制部30a對昇降機構65及旋轉機構50之控制,而對落下的有機材料進行定量,可以更簡便地進行對材料氣體生成部32c之有機材料的導入。 When a sufficient organic material is supplied from the material input mechanism 40, the width of the gap portion 64, the rotational speed of the lid 60, and the pressure difference between the agitating portion 42 and the second agitating portion 71 are determined by the first agitating portion 42. The amount of drop of the organic material dropped to the second stirring portion 71. The above three factors can be controlled by the elevating mechanism 65, the rotating mechanism 50, and the gas introducer 57. Therefore, the amount of the powdery organic material dropped from the quantitative portion 70 can be quantified to a desired amount. Further, by making the pressure of the carrier gas introduced into the agitating portion 42 and the second agitating portion 71 equal to each other, and eliminating the pressure difference between the agitating portion 42 and the second agitating portion 71, the elevating mechanism 65 can be used only by the control portion 30a. The control of the rotating mechanism 50 allows the organic material to be dropped, and the introduction of the organic material to the material gas generating portion 32c can be performed more easily.

落下通路72連通至材料氣體生成部30c。於材料氣體生成部30c,進行有機材料之汽化。在此,使用例如Alq3等昇華型材料,或是α-NPD等熔化型材料作為有機材料。昇華型材料與熔化型材料之蒸發機制不同。為了在材料氣體生成部30c有效率地進行蒸發,在使用昇華型材料的情形與使用熔化型材料的情形,分別採用不同結構。 The drop passage 72 is connected to the material gas generating portion 30c. The material gas generating unit 30c performs vaporization of the organic material. Here, a sublimation type material such as Alq 3 or a molten material such as α-NPD is used as the organic material. Sublimation materials differ from evaporation mechanisms in molten materials. In order to efficiently evaporate in the material gas generating portion 30c, a different structure is employed in the case of using the sublimation type material and the case of using the molten material.

在此,參考圖4,說明使用熔化型材料作為有機材料時,所採用的汽化器80。 Here, referring to Fig. 4, a carburetor 80 employed when a molten material is used as the organic material will be described.

圖4係具備汽化器80之材料氣體生成部30c的概略剖面圖,該汽化器80使熔化型的有機材料熔化,以產生材料氣體。如圖4所示,材料氣體生成部30c之內部,配置有具備中空結構的箱型汽化器80。汽化器80形成為內部可成氣密狀態。汽化器80係組 合上構件154、側方構件153及下構件155而構成。又,下構件155立設有腳部152。汽化器80之底壁151b藉由腳部152而受到支持。 4 is a schematic cross-sectional view of a material gas generating portion 30c including a vaporizer 80 that melts a molten organic material to generate a material gas. As shown in FIG. 4, a box-shaped vaporizer 80 having a hollow structure is disposed inside the material gas generating portion 30c. The vaporizer 80 is formed to be internally airtight. Vaporizer 80 series The member 154, the side member 153, and the lower member 155 are closed. Further, the lower member 155 is provided with a leg portion 152. The bottom wall 151b of the vaporizer 80 is supported by the foot 152.

在汽化器80之上構件154,插通有連通至汽化器80內部的粉末材料供給構件94。粉末材料供給構件94之上端部,連接著與材料供給裝置30連通的落下通路72。因此,粉末狀之有機材料,經由落下通路72及粉末材料供給構件94,而供給至汽化器80內部。又,輸送汽化後的氣體之載體氣體,也經由落下通路72及粉末材料供給構件94而與有機材料同時供給。另一方面,汽化器80之下構件155,設有與第1腔室20內的蒸鍍頭22連通的材料導入路31。汽化後的氣體經由材料導入路31而導入至蒸鍍頭22。 On the member 154 above the carburetor 80, a powder material supply member 94 that communicates with the inside of the carburetor 80 is inserted. The upper end portion of the powder material supply member 94 is connected to the drop passage 72 that communicates with the material supply device 30. Therefore, the powdery organic material is supplied to the inside of the vaporizer 80 via the drop passage 72 and the powder material supply member 94. Further, the carrier gas for transporting the vaporized gas is also supplied simultaneously with the organic material via the drop passage 72 and the powder material supply member 94. On the other hand, the lower member 155 of the vaporizer 80 is provided with a material introduction path 31 that communicates with the vapor deposition head 22 in the first chamber 20. The vaporized gas is introduced into the vapor deposition head 22 via the material introduction path 31.

在汽化器80之內部,配置有使有機材料汽化之材料蒸發板(汽化構件)82。材料蒸發板82係略呈圓盤狀之板狀構件(圓板構件),係以多孔質材料形成。作為多孔質材料,使用多孔陶瓷(例如SiC)。材料蒸發板82具有頂面(第1主面、供給面)82a及底面(第2主面)82b,於其中一方的主面側,具有使有機材料汽化之汽化面。於圖4中的材料蒸發板82中,由於有機材料係熔化型材料,因此以其底面82b作為汽化面,為加大表面積,故形成有溝槽。圖5及圖6,顯示材料蒸發板82之一例。圖中之(a)為材料蒸發板82之頂面圖、(b)為底面圖、(c)為材料蒸發板82之剖面圖。如圖5(a)及圖6(a)所示,於頂面82a之外緣,設有肋部82c。又,如圖5(b)所示,作為汽化面之底面82b的溝槽82d可形成為格子狀,如圖6(b)所示,溝槽82d亦可形成為同心圓狀。不論如何,如圖5(c)及圖6(c)所示,只要作為汽化面之底面82b的表面積可變大,溝槽82d的形狀可為任意者。又,材料蒸發板82,採用直徑為約200nm者。 Inside the vaporizer 80, a material evaporation plate (vaporization member) 82 that vaporizes the organic material is disposed. The material evaporation plate 82 is a plate-like member (a disk member) having a substantially disk shape and is formed of a porous material. As the porous material, a porous ceramic (for example, SiC) is used. The material evaporation plate 82 has a top surface (first main surface, supply surface) 82a and a bottom surface (second main surface) 82b, and has a vaporization surface for vaporizing an organic material on one of the main surface sides. In the material evaporation plate 82 of Fig. 4, since the organic material is a molten material, the bottom surface 82b is used as a vaporization surface, and the surface area is increased to form a groove. 5 and 6, an example of a material evaporation plate 82 is shown. In the figure, (a) is a top view of the material evaporation plate 82, (b) is a bottom view, and (c) is a cross-sectional view of the material evaporation plate 82. As shown in Fig. 5 (a) and Fig. 6 (a), a rib 82c is provided on the outer edge of the top surface 82a. Further, as shown in FIG. 5(b), the groove 82d which is the bottom surface 82b of the vaporization surface may be formed in a lattice shape, and as shown in FIG. 6(b), the groove 82d may be formed in a concentric shape. In any case, as shown in FIGS. 5(c) and 6(c), the shape of the groove 82d may be any as long as the surface area of the bottom surface 82b of the vaporization surface is large. Further, the material evaporation plate 82 is made to have a diameter of about 200 nm.

如圖4所示,材料蒸發板82之結構,係藉由旋轉機構而能以 旋轉軸旋轉。旋轉機構具有作為動力來源之真空馬達98,以及一端連接於真空馬達98並以中心軸作為旋轉軸之桿體95。桿體95之另一端,連接材料蒸發板82之底面82b的中心位置。藉此,材料蒸發板82可藉由旋轉機構(移動機構)而在平面內方向(in-plane direction)旋轉自如。又,真空馬達98構成為可控制材料蒸發板82之旋轉速度。 As shown in FIG. 4, the structure of the material evaporation plate 82 can be controlled by a rotating mechanism. The rotary axis rotates. The rotating mechanism has a vacuum motor 98 as a power source, and a rod 95 whose one end is connected to the vacuum motor 98 and has a central axis as a rotating shaft. The other end of the rod body 95 is connected to the center position of the bottom surface 82b of the material evaporation plate 82. Thereby, the material evaporation plate 82 can be freely rotated in the in-plane direction by the rotation mechanism (moving mechanism). Further, the vacuum motor 98 is configured to control the rotational speed of the material evaporation plate 82.

材料蒸發板82之頂面82a側,配置有粉末材料供給構件94之端部。粉末材料供給構件94之軸線,係從材料蒸發板82之旋轉軸位移者。於粉末材料供給構件94之端部,連接材料分散構件96,其使粉末狀之有機材料分散至材料蒸發板82的頂面82a上。圖7、8係說明材料分散構件96之形狀及與材料蒸發板82之位置關係的概要圖,圖7係頂面之概要圖,圖8係剖面之概要圖。如圖7、8所示,材料分散構件96呈現具有中空結構的略微圓頂形狀,具備相對於材料蒸發板82之頂面82a傾斜之端部。材料分散構件96配置成在垂直方向上離開材料蒸發板82之頂面82a附近,以和材料蒸發板82之頂面82a之間形成間隙K。材料分散構件96中,由連接粉末材料供給構件94之一端、與形成該間隙K之端部所連結而成之面,形成為沿著材料蒸發板82之旋轉方向彎曲之面。材料分散構件96一邊用間隙K調整厚度,一邊將粉末狀之有機材料D分散至材料蒸發板82的頂面82a上。粉末狀之有機材料D,在粉末材料供給構件94流通,而供給到材料蒸發板82的頂面82a上。由於粉末材料供給構件94及材料分散構件96被固定在指定位置,故藉由材料蒸發板82之旋轉,粉末狀之有機材料D,以間隙K之高度而被薄薄地延展,分散於材料蒸發板82之頂面82a上。如此這般,間隙K係延展粉末材料時規定其厚度的構件。又,落下之有機材料D經調整厚度後,其多餘部分的有機材料D,就收納在材料分散構件96之內部。如此,材料分散構件96為使落下之有機材料D分散,一邊收納一定程度之有機材料D,一邊透過間隙K進行厚度之調整。 An end portion of the powder material supply member 94 is disposed on the top surface 82a side of the material evaporation plate 82. The axis of the powder material supply member 94 is displaced from the rotational axis of the material evaporation plate 82. At the end of the powder material supply member 94, a material dispersion member 96 is bonded which disperses the powdery organic material onto the top surface 82a of the material evaporation plate 82. 7 and 8 are schematic views showing the shape of the material dispersion member 96 and the positional relationship with the material evaporation plate 82, Fig. 7 is a schematic view of the top surface, and Fig. 8 is a schematic view of the cross section. As shown in FIGS. 7 and 8, the material dispersion member 96 exhibits a slightly dome shape having a hollow structure and has an end portion inclined with respect to the top surface 82a of the material evaporation plate 82. The material dispersion member 96 is disposed to be apart from the vicinity of the top surface 82a of the material evaporation plate 82 in the vertical direction to form a gap K with the top surface 82a of the material evaporation plate 82. In the material dispersion member 96, a surface which is connected to one end of the powder material supply member 94 and which is connected to the end portion where the gap K is formed is formed to be curved along the rotation direction of the material evaporation plate 82. The material dispersion member 96 disperses the powdery organic material D onto the top surface 82a of the material evaporation plate 82 while adjusting the thickness with the gap K. The powdery organic material D flows through the powder material supply member 94 and is supplied onto the top surface 82a of the material evaporation plate 82. Since the powder material supply member 94 and the material dispersion member 96 are fixed at the designated position, the powdery organic material D is thinly spread by the height of the gap K by the rotation of the material evaporation plate 82, and is dispersed in the material evaporation plate. On top surface 82a of 82. In this manner, the gap K is a member that defines the thickness of the powder material when it is stretched. Further, after the fallen organic material D is adjusted in thickness, the excess portion of the organic material D is accommodated inside the material dispersion member 96. In this manner, the material dispersion member 96 adjusts the thickness through the gap K while arranging the organic material D to be dropped while accommodating a certain amount of the organic material D.

又,如圖4所示,汽化器80之側方構件153,以可於上下方向伸縮之構件構成。作為此種構件,舉例而言,可採用具有風箱形狀的不鏽鋼。藉此,汽化器80構成為其上構件154可相對於下構件155上下移動。又,材料氣體生成部30c之上部151a,配置有用以調整汽化器80之上構件154高度及斜度的調整具99。調整具99,透過軸99a而與上構件154連接,構成為可調整軸99a之推入量。又,上構件154更進一步地配置了2個同樣的調整具99及軸99a,以3點接觸而固定(未圖示)。然後藉由以一個支點為基準,調整另外2點之推入量,而調整上構件154之高度或斜度,藉此調整材料分散構件96與材料蒸發板82之間的間隙K。亦即,側方構件153、調整具99及軸99a,發揮材料分散構件96之昇降機構(3點運動(kinematic)機構)的功能。使用該機構,而調整供給至材料蒸發板82之材料供給量。 Moreover, as shown in FIG. 4, the side member 153 of the vaporizer 80 is comprised by the member which expands and expands in the up-down direction. As such a member, for example, stainless steel having a bellows shape can be employed. Thereby, the vaporizer 80 is configured such that the upper member 154 is movable up and down with respect to the lower member 155. Further, the upper portion 151a of the material gas generating portion 30c is provided with an adjuster 99 for adjusting the height and inclination of the member 154 on the vaporizer 80. The adjustment tool 99 is connected to the upper member 154 through the shaft 99a, and is configured to adjust the amount of pushing of the shaft 99a. Further, the upper member 154 is further provided with two identical adjustment members 99 and a shaft 99a, and is fixed by three-point contact (not shown). Then, by adjusting the pushing amount of the other two points with reference to one fulcrum, the height or inclination of the upper member 154 is adjusted, thereby adjusting the gap K between the material dispersing member 96 and the material evaporating plate 82. That is, the side member 153, the adjuster 99, and the shaft 99a function as a lifting mechanism (a three-point kinematic mechanism) of the material dispersing member 96. Using this mechanism, the amount of material supplied to the material evaporation plate 82 is adjusted.

又,於材料蒸發板82之底面82b的下側,配置有加熱器97。加熱器97加熱材料蒸發板82,以使有機材料(熔化型材料)的溫度高於熔點。例如,加熱器97將材料蒸發板82加熱到300℃~450℃。加熱器97配置於材料蒸發板82之底面82b側,且係從材料分散構件96之配置位置繞材料蒸發板82之旋轉方向約略半圈之位置。所謂約略半圈,係例如135°~225°之範圍,將加熱器97之重心配置於該範圍內。又,在此,加熱器97係設置於汽化器80之下構件155的下側,其構成以加熱器97之輻射熱來加熱材料蒸發板82之汽化面的結構。 Further, a heater 97 is disposed below the bottom surface 82b of the material evaporation plate 82. The heater 97 heats the material evaporation plate 82 so that the temperature of the organic material (melted type material) is higher than the melting point. For example, the heater 97 heats the material evaporation plate 82 to 300 ° C to 450 ° C. The heater 97 is disposed on the bottom surface 82b side of the material evaporation plate 82, and is disposed approximately a half turn from the arrangement position of the material dispersion member 96 around the rotation direction of the material evaporation plate 82. The approximate half circle is, for example, in the range of 135 to 225, and the center of gravity of the heater 97 is placed within this range. Further, here, the heater 97 is disposed on the lower side of the member 155 below the vaporizer 80, which constitutes a structure in which the vaporization surface of the material evaporation plate 82 is heated by the radiant heat of the heater 97.

又,落下通路72、材料導入路31,如上所述,分別於兩側設置加熱器52;又,汽化器80之頂面部及兩邊側部也都有設置加熱器52,而可以控制溫度。 Further, the drop passage 72 and the material introduction path 31 are provided with heaters 52 on both sides as described above, and the heater 52 is also provided on the top surface portion and both side portions of the vaporizer 80 to control the temperature.

藉由以上結構,粉末狀之有機材料與載體氣體一起從粉末材 料供給構件94供給至材料蒸發板82,藉由真空馬達98來使材料蒸發板82旋轉,而使粉末狀之有機材料一邊由材料分散構件96調整厚度,一邊在材料蒸發板82上薄薄地延展。然後,藉由加熱器97之輻射加熱,在作為汽化面之底面98b蒸發。從粉末材料供給構件94流入汽化器80之載體氣體,將所產生之材料氣體推擠出去,而使該材料氣體由材料導入路31流出。又,使用昇降機構,調整供給至材料蒸發板82之材料供給量,藉由真空馬達98而調整材料蒸發板82之旋轉速度,藉由加熱器97而調整加熱量。由於可進行上述調整,故可控制材料蒸發量,而得以提昇有機材料之汽化效率。 With the above structure, the powdery organic material is mixed with the carrier gas from the powder material. The material supply member 94 is supplied to the material evaporation plate 82, and the material evaporation plate 82 is rotated by the vacuum motor 98, and the powdery organic material is thinly stretched on the material evaporation plate 82 while being adjusted in thickness by the material dispersion member 96. . Then, by the radiant heating of the heater 97, it evaporates on the bottom surface 98b which is the vaporization surface. The carrier gas flowing into the vaporizer 80 from the powder material supply member 94 pushes out the generated material gas, and the material gas flows out from the material introduction path 31. Moreover, the material supply amount supplied to the material evaporation plate 82 is adjusted by the elevating mechanism, the rotation speed of the material evaporation plate 82 is adjusted by the vacuum motor 98, and the heating amount is adjusted by the heater 97. Since the above adjustment can be performed, the evaporation amount of the material can be controlled, and the vaporization efficiency of the organic material can be improved.

又,由於有機材料係以粉末之狀態而堆積於材料蒸發板82,故其昇華,相較於例如有機材料直接由顆粒狀昇華之情形,可在極短之時間內有效率地昇華,故可大量產生材料氣體。 Further, since the organic material is deposited on the material evaporation plate 82 in the state of the powder, the sublimation is sublimated, and the sublimation can be efficiently sublimated in a very short time as compared with, for example, the organic material is directly sublimated by the particles. A large amount of material gas is produced.

如以上之說明,從汽化器80之材料氣體生成部30c,會有有機材料汽化而成之材料氣體流出至材料導入路31。然後,如圖2所示,由於材料導入路31與第1腔室20內的蒸鍍頭22連通,因此在閥33開啟時,材料氣體會導入至蒸鍍頭22內。蒸鍍頭22安裝有加熱器52,在蒸鍍頭22之內部,材料氣體不會析出,材料氣體會由蒸鍍頭22噴射至基板G。 As described above, the material gas vaporized by the organic material flows out from the material gas generating portion 30c of the vaporizer 80 to the material introduction path 31. Then, as shown in FIG. 2, since the material introduction path 31 communicates with the vapor deposition head 22 in the first chamber 20, the material gas is introduced into the vapor deposition head 22 when the valve 33 is opened. The vapor deposition head 22 is provided with a heater 52. The material gas is not deposited inside the vapor deposition head 22, and the material gas is ejected from the vapor deposition head 22 to the substrate G.

又,若不要從蒸鍍頭22對基板G噴射材料氣體,則藉由關閉閥33,可停止從材料導入路31對蒸鍍頭22導入材料氣體。此時,由於材料氣體有時會殘留在材料導入路31,故材料導入路31備有閥35,設有連通至真空泵26a的材料退避路34,所以材料氣體會被真空泵26a抽吸、回收。又,蒸鍍頭22設有出流用流路36,其用以在完成成膜時,抽吸、回收殘留在蒸鍍頭22內的材料氣體,而將蒸鍍頭22內部抽真空,並連通至真空泵26a。藉由該等材料退避路34及流出用流路36,使殘留在材料導入路31及蒸鍍頭22 內之材料氣體完全回收,當進行成膜之基板G有複數片時,可使各基板G之成膜環境均等,故對複數之基板G進行均一性高的成膜。 Further, when the material gas is not ejected from the vapor deposition head 22 to the substrate G, the material gas can be stopped from being introduced into the vapor deposition head 22 from the material introduction path 31 by closing the valve 33. At this time, since the material gas may remain in the material introduction path 31, the material introduction path 31 is provided with the valve 35, and the material evacuation path 34 that communicates with the vacuum pump 26a is provided. Therefore, the material gas is sucked and collected by the vacuum pump 26a. Further, the vapor deposition head 22 is provided with an outflow flow path 36 for sucking and recovering the material gas remaining in the vapor deposition head 22 when the film formation is completed, and evacuating and connecting the inside of the vapor deposition head 22 To vacuum pump 26a. The material retreating path 34 and the outflow flow path 36 are left in the material introduction path 31 and the vapor deposition head 22 The material gas in the film is completely recovered. When the substrate G on which the film is formed has a plurality of sheets, the film formation environment of each of the substrates G can be made uniform, so that a plurality of substrates G are uniformly formed.

又,藉由設置在蒸鍍頭22之側部(第2腔室21之側部)的FTIR檢測器等蒸氣量量測器38而量測出之蒸鍍頭22內部的蒸氣量,與所期望之蒸氣量相比較,將其結果以信號的方式傳送至材料供給裝置30之氣體導入器57、或是設於各部之加熱器52,根據該信號而控制從氣體導入器57所導入之載體氣體的量,或是各部位之溫度,就可以對蒸鍍頭22內之蒸氣量進行最佳化。 Further, the amount of vapor inside the vapor deposition head 22 measured by the vapor amount measuring device 38 such as an FTIR detector provided on the side portion (the side portion of the second chamber 21) of the vapor deposition head 22 is used. The desired amount of vapor is compared, and the result is signal-transmitted to the gas introduction device 57 of the material supply device 30 or the heater 52 provided in each unit, and the carrier introduced from the gas introduction device 57 is controlled based on the signal. The amount of gas in the vapor deposition head 22 can be optimized by the amount of gas or the temperature of each part.

說明至此,若依據本實施形態的成膜裝置1,即可在材料供給裝置30定量顆粒狀之有機材料,同時使其成為粉末狀;進一步以材料蒸發板82,一邊調整厚度(供給量),一邊將有機材料汽化,產生材料氣體。又,藉由採用投入顆粒狀之有機材料後再加以粉碎之結構,例如使用真空預備式(load lock)的材料投入機構40而將顆粒狀的材料投入定量部70之情形,則相較於材料為粉狀之情形,可以正確地在投入材料時定量材料,且可順暢地進行連續投入。不僅如此,於噴射材料氣體至基板G而進行蒸鍍成膜時,對1片基板G進行成膜後,在要對下一片基板G進行成膜之際,先行將蒸鍍頭22及材料導入路31之內部抽真空,則即使以和第1片基板G幾乎相同的條件進行成膜,亦可妥善地進行基板G之成膜。 According to the film forming apparatus 1 of the present embodiment, the granular material organic material can be quantified in the material supply device 30 while being powdered, and the thickness (supply amount) can be adjusted by the material evaporation plate 82. The material gas is generated while vaporizing the organic material. Further, by adopting a structure in which a particulate organic material is introduced and then pulverized, for example, a material of a granular load is applied to the quantitative portion 70 by using a material loading mechanism 40 of a load lock, compared with a material. In the case of powder, the material can be accurately quantified at the time of input of the material, and continuous input can be smoothly performed. In addition, when a material gas is ejected to the substrate G to form a film by vapor deposition, after one sheet of the substrate G is formed, when the next substrate G is to be formed, the vapor deposition head 22 and the material are introduced first. When the inside of the road 31 is evacuated, even if the film formation is performed under almost the same conditions as the first substrate G, the film formation of the substrate G can be performed properly.

又,根據本實施形態之成膜裝置1,係從粉末材料供給構件94對材料蒸發板82之供給面供給粉末狀之固體材料,材料蒸發板82藉由真空馬達98而相對於材料分散構件94移動。藉由將作為供給面之頂面82a側加以移動,而可使粉末材料更進一步地擴散。又,藉由安裝於粉末材料供給構件94之材料分散構件96與材料蒸發板82之間的間隙K,固體材料就以相當於間隙寬度之厚度擴 散。如此這般,可以藉由間隙而以良好之精度調整昇華、熔化有機材料之速度。 Further, according to the film forming apparatus 1 of the present embodiment, the powdery solid material is supplied from the powder material supply member 94 to the supply surface of the material evaporation plate 82, and the material evaporation plate 82 is opposed to the material dispersion member 94 by the vacuum motor 98. mobile. The powder material can be further diffused by moving the side of the top surface 82a as the supply surface. Further, by the gap K between the material dispersing member 96 attached to the powder material supply member 94 and the material evaporating plate 82, the solid material is expanded by the thickness corresponding to the gap width. Scattered. In this way, the speed of sublimation and melting of the organic material can be adjusted with good precision by the gap.

又,根據本實施形態之成膜裝置1,由於材料分散構件96於其內部具有收納粉末狀有機材料之中空結構,因此收納在材料分散構件96之內部的粉末材料,能平均地遍佈於與材料蒸發板82之間的全體間隙,可以妥善地分散。 Further, according to the film forming apparatus 1 of the present embodiment, since the material dispersion member 96 has a hollow structure in which the powdery organic material is accommodated, the powder material accommodated inside the material dispersion member 96 can be evenly distributed over the material. The entire gap between the evaporation plates 82 can be properly dispersed.

又,根據本實施形態之成膜裝置1,藉由使材料分散構件96相對頂面82a昇降,則可變更間隙K的寬度,因此可變更粉末材料之厚度。又,根據本實施形態之成膜裝置1,由於材料蒸發板82係由多孔質材料所構成之圓板構件,其中一方之主面形成為汽化面,因此在頂面82a側汽化而產生之氣體可穿過材料蒸發板82,所產生之氣體可以從材料蒸發板82之底面側輸送出去。又,根據本實施形態之成膜裝置1,由於熔化後的材料可穿過多孔質的材料蒸發板82,故亦可以底面側作為汽化面。 Moreover, according to the film forming apparatus 1 of the present embodiment, the width of the gap K can be changed by moving the material dispersion member 96 up and down with respect to the top surface 82a, so that the thickness of the powder material can be changed. Further, according to the film forming apparatus 1 of the present embodiment, the material evaporation plate 82 is a disk member made of a porous material, and one of the main faces is formed as a vaporization surface, so that the gas generated by vaporization on the top surface 82a side is generated. The material evaporating plate 82 can be passed through, and the generated gas can be transported out from the bottom side of the material evaporating plate 82. Further, according to the film forming apparatus 1 of the present embodiment, since the melted material can pass through the porous material evaporation plate 82, the bottom surface side can be used as the vaporization surface.

又,根據本實施形態之成膜裝置1,由於係以連接於材料蒸發板82之桿體作為旋轉軸來旋轉材料蒸發板82,所以可以將粉末構件分散到材料蒸發板82之整面。由於加熱器97係配置於從材料分散構件96之配置位置沿著材料蒸發板82之旋轉方向約略轉半圈之位置,因此可以在加熱區域與材料投入區域之間設置溫度差。所以,可以減少投入時之汽化。故可達成材料投入量之定量化。 Further, according to the film forming apparatus 1 of the present embodiment, since the material evaporation plate 82 is rotated by the rod body connected to the material evaporation plate 82 as a rotating shaft, the powder member can be dispersed over the entire surface of the material evaporation plate 82. Since the heater 97 is disposed at a position slightly rotated by a half turn from the arrangement position of the material dispersion member 96 in the rotation direction of the material evaporation plate 82, a temperature difference can be provided between the heating region and the material input region. Therefore, the vaporization at the time of input can be reduced. Therefore, the amount of material input can be quantified.

又,根據本實施形態之成膜裝置1,具備將有機材料供給到粉末材料供給構件94之供給部30b;由於供給部30b具有攪拌有機材料之第2攪拌部71,因此可以藉由第2攪拌部71清除因為帶電等而附著在壁面等之有機材料。尤其將第2攪拌部71抽真空後,有機材料會更易於附著在壁面等,因此可使此結構更加發揮第2 攪拌部71之作用效果。又,藉由變更攪拌器之形狀,可以因應各材料之粒徑等差異。 Further, the film forming apparatus 1 of the present embodiment includes the supply unit 30b that supplies the organic material to the powder material supply member 94. The supply unit 30b has the second stirring unit 71 that agitates the organic material, so that the second stirring unit can be used. The portion 71 removes an organic material that adheres to a wall surface or the like due to charging or the like. In particular, when the second agitating portion 71 is evacuated, the organic material is more likely to adhere to the wall surface or the like, so that the structure can be further enhanced. The effect of the stirring portion 71. Further, by changing the shape of the agitator, it is possible to vary depending on the particle diameter of each material.

又,上述之實施形態僅係本發明之成膜裝置及材料供給裝置之一例,本發明並不以實施形態之裝置為限,亦可加以變形或是適用於其他物品。。 Further, the above-described embodiment is merely an example of the film forming apparatus and the material supply apparatus of the present invention, and the present invention is not limited to the apparatus of the embodiment, and may be modified or applied to other articles. .

例如在上述實施形態中,如圖5(a)所示,於材料蒸發板82之頂面82a僅設置肋部82c;但亦可如圖9(a)所示,於中央設置同心圓狀之凸部82e以形成溝槽82f。如圖9(b)所示,藉由使材料分散構件96與肋部82c及凸部82e接觸配置,可以對材料蒸發板82供給恰好為溝槽82f份量之有機材料D。亦即,可以依據溝槽82f之容量而控制對材料蒸發板82供給之材料供給量。如此這般,於使用溝槽82f來控制材料供給量時,就算沒有在定量部70正確定量有機材料的情形下,亦能以平均的速率來昇華、熔化有機材料。亦即,即使不設置定量部70,亦能以平均的速率來昇華、熔化有機材料。又,亦可以切削材料蒸發板82之方式來形成溝槽82f。更進一步來說,溝槽82f之形狀並不限於圖9(a)所示,例如亦可為圖5(b)、圖6(b)所示之形狀。如此,藉由在材料蒸發板82中與材料分散構件96相向之主面側形成溝槽,於材料分散構件96配置成平刮溝槽般的情況下,可以將填充於溝槽的量當作是有機材料之供給量來設定。因此可以固定有機材料之供給量。 For example, in the above embodiment, as shown in Fig. 5(a), only the rib 82c is provided on the top surface 82a of the material evaporation plate 82. However, as shown in Fig. 9(a), concentric circles may be provided at the center. The convex portion 82e forms a groove 82f. As shown in Fig. 9(b), by disposing the material dispersing member 96 in contact with the rib portion 82c and the convex portion 82e, the material evaporating plate 82 can be supplied with the organic material D which is exactly the amount of the groove 82f. That is, the amount of material supplied to the material evaporation plate 82 can be controlled in accordance with the capacity of the groove 82f. In this manner, when the amount of material supply is controlled by using the groove 82f, the organic material can be sublimated and melted at an average rate even in the case where the quantitative portion 70 does not accurately quantify the organic material. That is, even if the quantitative portion 70 is not provided, the organic material can be sublimated and melted at an average rate. Further, the groove 82f may be formed by cutting the material evaporation plate 82. Furthermore, the shape of the groove 82f is not limited to that shown in FIG. 9(a), and may be, for example, the shape shown in FIGS. 5(b) and 6(b). Thus, by forming a groove on the main surface side facing the material dispersing member 96 in the material evaporating plate 82, and in the case where the material dispersing member 96 is disposed in a flat scraping groove, the amount filled in the groove can be regarded as The amount of organic material supplied is set. Therefore, the supply amount of the organic material can be fixed.

又,於上述實施形態中,所說明之有機材料係使用熔化型材料之情形,然而有機材料亦可為使用昇華型材料的情形。在此情形,可以採用昇華器90代替汽化器80。圖10係採用昇華器90之材料氣體生成部30c之概要圖。如圖10所示,與汽化器80之不同,僅在於材料蒸發板100之汽下面換成頂面100a這一點。設於頂面100a之溝槽,具有擴大汽下面之表面積以促進蒸發之功能,同時,如上所述,由於係供給材料分散構件96之溝槽容量之 份量的材料,所以具有藉由溝槽來控制材料供給量的功能。 Further, in the above embodiment, the organic material described above is a molten material, but the organic material may be a sublimated material. In this case, the sublimator 90 can be used instead of the vaporizer 80. Fig. 10 is a schematic view showing a material gas generating portion 30c of the sublimator 90. As shown in FIG. 10, unlike the vaporizer 80, only the underside of the vapor of the material evaporation plate 100 is replaced with the top surface 100a. The groove provided on the top surface 100a has a function of expanding the surface area under the steam to promote evaporation, and as described above, due to the groove capacity of the material supply material dispersing member 96 The amount of material, so there is a function of controlling the amount of material supplied by the grooves.

又,於上述實施形態,係例示製造有機電致發光元件之情形,針對使用有機材料在基板上蒸鍍有機層之情形作說明,然而本發明並不限定於此,亦可適用於藉由蒸鍍處理來進行成膜、表面處理等所製造出之各種電子元件、光學元件等。 Further, in the above embodiment, the case where the organic electroluminescence device is manufactured is described, and the case where the organic layer is deposited on the substrate using an organic material will be described. However, the present invention is not limited thereto, and may be applied to steaming. Various electronic components, optical components, and the like which are produced by film formation, surface treatment, and the like are subjected to plating treatment.

又,於上述實施形態,係針對具備單一蒸鍍頭之裝置加以說明,但通常在成膜裝置中,對基板G噴射有機材料氣體的蒸鍍頭,例如為了電洞輸送層、非發光層(電子阻礙層(electron blocking layer))、藍色發光層、紅色發光層、綠色發光層、電子輸送層等,要蒸鍍複數之有機層時,會準備複數個。在具備複數個蒸鍍頭之裝置,為因應蒸鍍頭之數量而設置複數個上述實施形態之材料供給部的成膜裝置,當然也涵括在本發明之範圍內。 Further, in the above embodiment, an apparatus having a single vapor deposition head is described. However, in the film formation apparatus, a vapor deposition head for ejecting an organic material gas to the substrate G is usually used, for example, for a hole transport layer or a non-light-emitting layer ( In the electron blocking layer, the blue light-emitting layer, the red light-emitting layer, the green light-emitting layer, the electron transport layer, and the like, when a plurality of organic layers are to be vapor-deposited, a plurality of layers are prepared. It is a matter of course that the apparatus for providing a plurality of vapor deposition heads is a film formation apparatus in which a plurality of material supply units of the above-described embodiments are provided in accordance with the number of vapor deposition heads.

又,於上述實施形態,所說明之材料投入機構40係真空預備式,而其具體結構可以係參考圖11而說明如下之結構。 Further, in the above embodiment, the material input mechanism 40 described above is a vacuum preparation type, and the specific configuration thereof can be explained with reference to Fig. 11 as follows.

圖11係顯示材料投入機構40結構之一例的說明圖。如圖11所示,材料投入機構40係由材料導入部120與材料投入路125所構成,該材料導入部120進行材料之導入,該材料投入路125將材料導入部120所導入之材料投入至材料供給裝置30內。材料導入部120配置於材料投入路125的上方,材料導入部120與材料投入路125透過閘閥130而連接。材料導入部120係可密閉之結構,由於材料導入部120設有排氣口121,所以透過連通於排氣口121之未圖示的真空泵之運作,可將材料導入部120抽真空。又,材料投入路125連通於未繪示於圖11的材料供給裝置30之第1攪拌部42,與第1攪拌部42連動而被抽真空。 Fig. 11 is an explanatory view showing an example of the structure of the material input mechanism 40. As shown in FIG. 11, the material input mechanism 40 is composed of a material introduction unit 120 and a material introduction path 125. The material introduction unit 120 introduces a material, and the material introduction path 125 puts the material introduced by the material introduction unit 120 into the material. Inside the material supply device 30. The material introduction portion 120 is disposed above the material introduction path 125, and the material introduction portion 120 and the material introduction path 125 are connected to each other through the gate valve 130. The material introduction portion 120 is a structure that can be sealed. Since the material introduction portion 120 is provided with the exhaust port 121, the material introduction portion 120 can be evacuated by the operation of a vacuum pump (not shown) that communicates with the exhaust port 121. Further, the material supply path 125 communicates with the first agitating portion 42 not shown in the material supply device 30 of Fig. 11, and is evacuated in conjunction with the first agitating portion 42.

又,於材料導入部120,設置有:精煉機構140,其具有包圍 著空間132的形狀(研鉢形狀),該空間132係往下端逐漸變窄的圓錐形狀;以及攪拌機構145,其攪拌精煉機構140內之圓錐形狀的空間132內部。材料導入部120,設有導入口133,其將材料導入精煉機構140內的空間132,且開閉自如。在此,攪拌機構145係由以下兩構件所構成:旋轉軸147,於空間132之中心部,藉由未圖示之驅動機構的運作而旋轉;以及攪拌棒149,於旋轉軸147水平地安裝有複數個。又,精煉機構140之底部(空間132的下方部分)與閘閥130之結構,係藉由管路150而連接,在精煉機構140精煉後材料就在管路150通過,於開放閘閥130時,從精煉機構140落下之材料會通過管路150,而送往材料投入路125。 Further, the material introduction unit 120 is provided with a refining mechanism 140 having an enclosing The shape of the space 132 (the shape of the mortar), the space 132 is a conical shape that is gradually narrowed toward the lower end, and the agitating mechanism 145 that agitates the inside of the conical space 132 in the refining mechanism 140. The material introduction portion 120 is provided with an introduction port 133 for introducing the material into the space 132 in the refining mechanism 140, and opening and closing. Here, the agitation mechanism 145 is composed of two members: a rotating shaft 147 that rotates in a central portion of the space 132 by operation of a driving mechanism (not shown), and a stirring bar 149 that is horizontally mounted on the rotating shaft 147. There are multiple. Further, the bottom of the refining mechanism 140 (the lower portion of the space 132) and the structure of the gate valve 130 are connected by a pipe 150. After the refining mechanism 140 is refined, the material passes through the pipe 150, and when the gate valve 130 is opened, The material dropped by the refining mechanism 140 is sent to the material input path 125 through the line 150.

又,於精煉機構140之外側面安裝有加熱器142,可以將導入至精煉機構140內的材料加熱。又,加熱器之設置、配置,於材料投入機構40,較佳係於各種部分安裝加熱器,以使材料的溫度保持在指定的溫度。又,於精煉機構140內,除了精煉機構140以外的部分,雖然並未繪示加熱器,但就有效率地對材料加熱、均熱的觀點來看,亦可在其他部分也設置加熱器。 Further, a heater 142 is attached to the outer surface of the refining mechanism 140, and the material introduced into the refining mechanism 140 can be heated. Further, in the arrangement and arrangement of the heaters, the material loading mechanism 40 is preferably provided with heaters in various portions to maintain the temperature of the material at a predetermined temperature. Further, in the refining mechanism 140, the heater is not shown in the portion other than the refining mechanism 140, but the heater may be provided in other portions from the viewpoint of efficiently heating and soaking the material.

以上,依據圖11所示結構之材料投入機構40,於材料供給裝置,首先在關閉閘閥130之狀態下,材料導入部120對大氣開放,(有機)材料會從導入口133導入至材料導入部120之精煉機構140內。然後,在精煉機構140,材料一邊會由攪拌棒149攪拌,一邊受到加熱、精煉。 According to the material supply mechanism 40 of the configuration shown in Fig. 11, in the material supply device, first, in the state where the gate valve 130 is closed, the material introduction portion 120 is opened to the atmosphere, and the (organic) material is introduced from the introduction port 133 to the material introduction portion. 120 refining mechanism 140. Then, in the refining mechanism 140, the material is heated and refined while being stirred by the stirring bar 149.

接著,藉由從排氣口121排氣,將材料導入部120內抽真空。在此,材料供給裝置30運轉時的狀態,係例如圖3所示,材料供給裝置30內部,亦即第1攪拌部42抽成真空的狀態。因此,為了投入材料而開放閘閥130時,材料導入部120內與材料投入路125內之真空度(內壓)必須為幾乎同等程度,所以上述材料導入部120之排氣,要進行到成為與材料供給裝置30內之真空度相同 程度之真空度。 Next, the material introduction portion 120 is evacuated by exhausting from the exhaust port 121. Here, the state in which the material supply device 30 is in operation is, for example, as shown in FIG. 3, and the inside of the material supply device 30, that is, the state in which the first agitating portion 42 is evacuated. Therefore, when the gate valve 130 is opened to insert the material, the degree of vacuum (internal pressure) in the material introduction portion 120 and the material introduction path 125 must be almost equal. Therefore, the exhaust of the material introduction portion 120 is required to be The vacuum in the material supply device 30 is the same The degree of vacuum.

在排出材料導入部120內的氣體後,閘閥130會開放,在精煉機構140精煉過的材料會通過管路150,而由材料投入路125導入至材料供給裝置30之第1攪拌部42。然後對材料供給裝置30導入材料後,閘閥130會關閉,材料導入部120會再度向大氣開放,對下一批要投入的新材料進行精煉。 After the gas in the material introduction portion 120 is discharged, the gate valve 130 is opened, and the material refined in the refining mechanism 140 passes through the pipe 150 and is introduced into the first agitating portion 42 of the material supply device 30 from the material supply path 125. Then, after the material is supplied to the material supply device 30, the gate valve 130 is closed, and the material introduction portion 120 is again opened to the atmosphere to refine the next batch of new materials to be input.

藉由使圖11所示的材料投入機構40以如上說明之製程運轉,而對材料供給裝置30導入材料,就能在抽成真空的狀態下,不對運轉中的材料供給裝置30的真空度(內壓)有所影響,就將新的材料導入至材料供給裝置30內,故可促進生產性之提昇。 By introducing the material into the material supply device 30 by the material input mechanism 40 shown in FIG. 11 and performing the above-described process operation, the vacuum of the material supply device 30 during operation can be prevented in the vacuumed state ( When the internal pressure is affected, new materials are introduced into the material supply device 30, so that productivity can be improved.

又,於上述之實施形態中,說明了使用真空馬達98及桿體95來使材料蒸發板82旋轉的例子,但只要能相對材料分散板96移動即可,亦可為旋轉以外之移動。 Further, in the above-described embodiment, an example in which the material evaporating plate 82 is rotated by the vacuum motor 98 and the rod body 95 has been described. However, as long as it can move relative to the material dispersing plate 96, it may be moved other than rotation.

又,於上述之實施形態,說明了在基板G之成膜對象面朝上的狀態下(face up之狀態下)支持基板G的支持台23的例子,但亦可為所設置之支持基板G的支持台係在基板G之成膜對象面朝下的狀態下(face down之狀態下)成膜的裝置。 Further, in the above-described embodiment, an example in which the support table 23 of the support substrate G is supported in a state in which the substrate to be coated of the substrate G faces upward (in the state of face up) is described. However, the support substrate G may be provided. The support table is a device that forms a film in a state in which the film formation target of the substrate G faces downward (in the state of face down).

G‧‧‧基板 G‧‧‧Substrate

1‧‧‧成膜裝置 1‧‧‧ film forming device

10‧‧‧陽極層 10‧‧‧ anode layer

11‧‧‧有機層 11‧‧‧Organic layer

12‧‧‧陰極層 12‧‧‧ cathode layer

13‧‧‧密封膜層 13‧‧‧ Sealing film

15‧‧‧蒸鍍裝置(成膜部) 15‧‧‧Vapor deposition unit (film formation)

20‧‧‧第1腔體 20‧‧‧1st cavity

21‧‧‧第2腔體 21‧‧‧2nd cavity

22‧‧‧蒸鍍頭 22‧‧‧Steam head

23‧‧‧支持台 23‧‧‧Support desk

25a‧‧‧排氣管 25a‧‧‧Exhaust pipe

25b‧‧‧排氣管 25b‧‧‧Exhaust pipe

26a‧‧‧真空泵 26a‧‧‧Vacuum pump

26b‧‧‧真空泵 26b‧‧‧Vacuum pump

30‧‧‧材料供給裝置 30‧‧‧Material supply device

30a‧‧‧控制部 30a‧‧‧Control Department

30b‧‧‧供給部 30b‧‧‧Supply Department

30c‧‧‧材料氣體產生部 30c‧‧‧Material Gas Generation Department

31‧‧‧材料導入路 31‧‧‧Material introduction

33‧‧‧閥 33‧‧‧Valves

34‧‧‧材料退避路 34‧‧‧Material retreat

35‧‧‧閥 35‧‧‧ valve

36‧‧‧管流路 36‧‧‧Tubing

37‧‧‧閥 37‧‧‧Valves

38‧‧‧蒸氣量測定器 38‧‧‧Vapor measuring device

39‧‧‧窗體 39‧‧‧Form

40‧‧‧材料投入機構 40‧‧‧Material input agencies

41‧‧‧攪拌器 41‧‧‧Agitator

42‧‧‧第1攪拌部 42‧‧‧1st mixing section

43‧‧‧落下孔 43‧‧‧Down hole

44‧‧‧旋轉筒 44‧‧‧Rotating cylinder

45a‧‧‧帶輪 45a‧‧‧ Pulley

45b‧‧‧帶輪 45b‧‧‧ Pulley

46‧‧‧旋轉軸 46‧‧‧Rotary axis

47‧‧‧帶體 47‧‧‧带体

48‧‧‧攪拌器 48‧‧‧Agitator

49‧‧‧磁性流體密封件 49‧‧‧Magnetic fluid seals

50‧‧‧旋轉機構 50‧‧‧Rotating mechanism

52‧‧‧加熱器 52‧‧‧heater

55‧‧‧真空泵 55‧‧‧Vacuum pump

57‧‧‧氣體導入器 57‧‧‧ gas introducer

60‧‧‧蓋體 60‧‧‧ cover

61‧‧‧軸 61‧‧‧Axis

61’‧‧‧結合構件 61’‧‧‧Combined components

61a‧‧‧軸 61a‧‧‧Axis

61b‧‧‧軸 61b‧‧‧Axis

62‧‧‧昇降機構 62‧‧‧ Lifting mechanism

63‧‧‧凹面體 63‧‧‧ concave body

64‧‧‧間隙部 64‧‧‧Gap section

65‧‧‧昇降機構 65‧‧‧ Lifting mechanism

66‧‧‧量測器 66‧‧‧Measurer

70‧‧‧定量部 70‧‧‧Quantity Department

71‧‧‧第2攪拌部 71‧‧‧2nd mixing section

72‧‧‧落下通路 72‧‧‧Lower access

73‧‧‧壓力計 73‧‧‧ pressure gauge

80‧‧‧汽化器 80‧‧‧Vaporizer

82‧‧‧材料蒸發板(汽化構件) 82‧‧‧Material evaporation board (vaporization unit)

82a‧‧‧頂面(第1主面、供給面) 82a‧‧‧ top surface (first main surface, supply surface)

82b‧‧‧底面(第2主面) 82b‧‧‧ bottom surface (2nd main surface)

82c‧‧‧肋部 82c‧‧‧ ribs

82d‧‧‧溝槽 82d‧‧‧ trench

82e‧‧‧凸部 82e‧‧‧ convex

82f‧‧‧溝槽 82f‧‧‧ trench

90‧‧‧昇華器 90‧‧‧Sublimation

94‧‧‧粉末材料供給構件 94‧‧‧Powder material supply member

95‧‧‧桿體 95‧‧‧ rod body

96‧‧‧材料分散構件 96‧‧‧Material dispersing components

97‧‧‧加熱器 97‧‧‧heater

98‧‧‧真空馬達 98‧‧‧vacuum motor

99‧‧‧調整具 99‧‧‧Adjustment

99a‧‧‧軸 99a‧‧‧Axis

100‧‧‧材料蒸發板 100‧‧‧ material evaporation board

100a‧‧‧頂面 100a‧‧‧ top

120‧‧‧材料導入部 120‧‧‧Material Import Department

121‧‧‧排氣口 121‧‧‧Exhaust port

125‧‧‧材料投入路 125‧‧‧Material input

130‧‧‧閘閥 130‧‧‧ gate valve

132‧‧‧空間 132‧‧‧ Space

133‧‧‧導入口 133‧‧‧Import

140‧‧‧精煉機構 140‧‧‧Refining agency

142‧‧‧加熱器 142‧‧‧heater

145‧‧‧攪拌機構 145‧‧‧Stirring mechanism

147‧‧‧旋轉軸 147‧‧‧Rotary axis

149‧‧‧攪拌棒 149‧‧‧ stir bar

150‧‧‧管路 150‧‧‧pipe

151a‧‧‧上部 151a‧‧‧ upper

151b‧‧‧底壁 151b‧‧‧ bottom wall

152‧‧‧腳部 152‧‧‧ feet

153‧‧‧側方構件 153‧‧‧Side components

154‧‧‧上構件 154‧‧‧Upper components

155‧‧‧下構件 155‧‧‧lower components

A‧‧‧有機電致發光元件 A‧‧‧Organic electroluminescent elements

D‧‧‧有機材料 D‧‧‧Organic materials

K‧‧‧間隙 K‧‧‧ gap

圖1(a)~(d)係有機電致發光元件之製造工程的說明圖。 Fig. 1 (a) to (d) are explanatory views of a manufacturing process of an organic electroluminescence device.

圖2係顯示成膜裝置之結構的概要圖。 Fig. 2 is a schematic view showing the structure of a film forming apparatus.

圖3係圖2之材料供給裝置之放大圖。 Figure 3 is an enlarged view of the material supply device of Figure 2.

圖4係圖3之材料氣體生成部的局部剖面圖。 Fig. 4 is a partial cross-sectional view showing the material gas generating portion of Fig. 3.

圖5係顯示圖4之材料蒸發板之一例的概略圖,圖5(a)係俯視圖,圖5(b)係仰視圖,圖5(c)係剖面圖。 Fig. 5 is a schematic view showing an example of the material evaporation plate of Fig. 4, Fig. 5(a) is a plan view, Fig. 5(b) is a bottom view, and Fig. 5(c) is a cross-sectional view.

圖6係顯示圖4之材料蒸發板之另一例的概略圖,圖6(a)係俯視圖,圖6(b)係仰視圖,圖6(c)係剖面圖。 Fig. 6 is a schematic view showing another example of the material evaporation plate of Fig. 4, Fig. 6(a) is a plan view, Fig. 6(b) is a bottom view, and Fig. 6(c) is a cross-sectional view.

圖7係說明圖4之材料蒸發板及材料分散構件之概略圖。 Fig. 7 is a schematic view showing the material evaporation plate and the material dispersion member of Fig. 4.

圖8係說明圖4之材料蒸發板及材料分散構件之概略圖。 Fig. 8 is a schematic view showing the material evaporation plate and the material dispersion member of Fig. 4.

圖9係說明圖4之材料蒸發板及材料分散構件之另一例的概略圖,圖9(a)係俯視圖,圖9(b)係剖面圖。 Fig. 9 is a schematic view showing another example of the material evaporation plate and the material dispersion member of Fig. 4, wherein Fig. 9(a) is a plan view and Fig. 9(b) is a cross-sectional view.

圖10係圖3之材料氣體生成部的另一實施例之局部剖面圖。 Figure 10 is a partial cross-sectional view showing another embodiment of the material gas generating portion of Figure 3.

圖11係顯示材料投入機構之具體例的圖。 Fig. 11 is a view showing a specific example of a material input mechanism.

22‧‧‧蒸鍍頭 22‧‧‧Steam head

30b‧‧‧供給部 30b‧‧‧Supply Department

30c‧‧‧材料氣體產生部 30c‧‧‧Material Gas Generation Department

31‧‧‧材料導入路 31‧‧‧Material introduction

80‧‧‧汽化器 80‧‧‧Vaporizer

82‧‧‧材料蒸發板(汽化構件) 82‧‧‧Material evaporation board (vaporization unit)

82a‧‧‧頂面(第1主面、供給面) 82a‧‧‧ top surface (first main surface, supply surface)

82b‧‧‧底面(第2主面) 82b‧‧‧ bottom surface (2nd main surface)

94‧‧‧粉末材料供給構件 94‧‧‧Powder material supply member

95‧‧‧桿體 95‧‧‧ rod body

96‧‧‧材料分散構件 96‧‧‧Material dispersing components

97‧‧‧加熱器 97‧‧‧heater

98‧‧‧真空馬達 98‧‧‧vacuum motor

99‧‧‧調整具 99‧‧‧Adjustment

99a‧‧‧軸 99a‧‧‧Axis

151a‧‧‧上部 151a‧‧‧ upper

151b‧‧‧底壁 151b‧‧‧ bottom wall

152‧‧‧腳部 152‧‧‧ feet

153‧‧‧側方構件 153‧‧‧Side components

154‧‧‧上構件 154‧‧‧Upper components

155‧‧‧下構件 155‧‧‧lower components

Claims (17)

一種材料供給裝置,將固體材料汽化並加以供給,包括:汽化構件,具有供給面以接受該固體材料之供給,而將該固體材料汽化;粉末材料供給構件,將粉末狀的該固體材料供給至該汽化構件之供給面上;材料分散構件,安裝於該粉末材料供給構件,配置成與該汽化構件的供給面之間產生間隙,將粉末狀之該固體材料分散至該汽化構件的供給面上;以及移動機構,相對於該材料分散構件而移動該汽化構件。 A material supply device for vaporizing and supplying a solid material, comprising: a vaporization member having a supply surface for receiving a supply of the solid material to vaporize the solid material; and a powder material supply member supplying the powdered solid material to a supply surface of the vaporization member; a material dispersion member attached to the powder material supply member, disposed to form a gap with the supply surface of the vaporization member, and dispersing the powdery solid material to the supply surface of the vaporization member And a moving mechanism that moves the vaporization member relative to the material dispersion member. 如申請專利範圍第1項之材料供給裝置,其中,該材料分散構件,具有中空結構。 The material supply device of claim 1, wherein the material dispersion member has a hollow structure. 如申請專利範圍第1或2項之材料供給裝置,其中,更具備:昇降機構,使該材料分散構件相對於該供給面昇降。 A material supply device according to claim 1 or 2, further comprising: an elevating mechanism for elevating and lowering the material dispersing member with respect to the supply surface. 如申請專利範圍第1至3項中任一項之材料供給裝置,其中,該汽化構件,配置成使該供給面成為頂面。 The material supply device according to any one of claims 1 to 3, wherein the vaporization member is disposed such that the supply surface becomes a top surface. 如申請專利範圍第1至4項中任一項之材料供給裝置,其中,該汽化構件,係由多孔質材料所構成之圓板構件,其中一方之主面形成為汽化面。 The material supply device according to any one of claims 1 to 4, wherein the vaporization member is a disk member made of a porous material, and one of the main faces is formed as a vaporization surface. 如申請專利範圍第1至5項中任一項之材料供給裝置,其中,該汽化構件,在供給面上形成構槽。 The material supply device according to any one of claims 1 to 5, wherein the vaporization member forms a groove on the supply surface. 如申請專利範圍第1至6項中任一項之材料供給裝置,其中,該移動機構,使該汽化構件旋轉。 The material supply device of any one of claims 1 to 6, wherein the moving mechanism rotates the vaporization member. 如申請專利範圍第7項之材料供給裝置,其中,該移動機構,係以連接該汽化構件之桿體作為旋轉軸,而旋轉該汽化構件。 The material supply device of claim 7, wherein the moving mechanism rotates the vaporization member by a shaft that connects the vaporization member as a rotating shaft. 如申請專利範圍第7或8項之材料供給裝置,其中,該粉末材料供給構件,具有從該汽化構件之旋轉軸位移之軸線。 The material supply device of claim 7 or 8, wherein the powder material supply member has an axis displaced from a rotational axis of the vaporization member. 如申請專利範圍第7至9項中任一項之材料供給裝置,其 中,該材料分散構件中,由連接該粉末材料供給構件之一端、與形成該間隙之端部所連結而成之面,係沿著該汽化構件之旋轉方向彎曲之面。 A material supply device according to any one of claims 7 to 9, wherein In the material dispersion member, a surface that is connected to one end of the powder material supply member and joined to an end portion where the gap is formed is a surface that is curved along a rotation direction of the vaporization member. 如申請專利範圍第1至10項中任一項之材料供給裝置,其中,更具備:加熱器,配置於該汽化構件之下方,用以加熱該汽化構件。 The material supply device according to any one of claims 1 to 10, further comprising: a heater disposed below the vaporization member for heating the vaporization member. 如申請專利範圍第11項之材料供給裝置,其中,該移動機構,使該汽化構件旋轉;該加熱器,配置於從該材料分散構件之配置位置,沿著該汽化構件之旋轉軸的旋轉方向約略轉半圈之位置。 The material supply device of claim 11, wherein the moving mechanism rotates the vaporization member; the heater is disposed at a position from the disposition member of the material, along a rotation direction of the rotation axis of the vaporization member Approximately half a turn. 如申請專利範圍第1至12項中任一項之材料供給裝置,其中,更具備:供給部,將該固體材料供給至該粉末材料供給構件;該供給部係一殼體,該殼體藉由內壁而區劃出朝向下端逐漸變窄之圓錐形狀的下空間,於該下空間之最下部形成有讓粉末狀之該固體材料落下用之落下孔,並具有從該落下孔沿著該內壁而往上方延伸並往內側彎折的線狀構件。 The material supply device according to any one of claims 1 to 12, further comprising: a supply unit that supplies the solid material to the powder material supply member; the supply portion is a casing, and the casing is borrowed a conical-shaped lower space which is gradually narrowed toward the lower end by the inner wall, and a falling hole for dropping the powdery solid material is formed at the lowermost portion of the lower space, and has a falling hole from the falling hole A wire-shaped member that extends upward and is bent inside. 如申請專利範圍第13項之材料供給裝置,其中,該供給部為可抽真空的結構。 The material supply device of claim 13, wherein the supply portion is an evacuatable structure. 如申請專利範圍第13或14項之材料供給裝置,其中,該供給部包含:定量部,其具有朝上方突出之圓錐形狀的蓋體、與該蓋體之頂面對向設置之圓錐形狀的凹面體、以及使該蓋體與該凹面體相對旋轉的旋轉機構;材料投入機構,對該定量部投入材料;以及昇降機構,可自由變更該蓋體與該凹面體之間的間隙;在該材料投入機構的下游側且在該定量部之上游側之處,藉由內壁而區劃出上空間,在該上空間的最下部,形成有讓該固體材料落下之落下孔,並具有線狀構件,其從該落下孔沿著內壁往 上方延伸,同時朝向內側彎折。 The material supply device of claim 13 or 14, wherein the supply portion comprises: a quantitative portion having a conical cover body protruding upward, and a conical shape facing the top of the cover body a concave body and a rotating mechanism for rotating the lid body and the concave body; a material input mechanism for inserting a material into the quantitative portion; and a lifting mechanism for freely changing a gap between the lid body and the concave surface; a downstream side of the material input mechanism and an upstream side of the quantitative portion, an upper space is partitioned by the inner wall, and a lower hole for dropping the solid material is formed at the lowermost portion of the upper space, and has a line shape a member from the falling hole along the inner wall Extends upwards while bending toward the inside. 如申請專利範圍第15項之材料供給裝置,其中,該材料投入機構,係由材料導入部及材料投入部所構成,該材料導入部導入材料且可抽成真空,而該材料投入部將所導入之材料投入至該材料供給裝置且可抽成真空;該材料導入部與該材料投入部係透過閘閥連接。 The material supply device according to claim 15, wherein the material input mechanism is composed of a material introduction portion and a material input portion, and the material introduction portion introduces a material and can be evacuated, and the material input portion is The introduced material is supplied to the material supply device and can be evacuated; the material introduction portion and the material input portion are connected to each other through a gate valve. 一種成膜裝置,將固體材料汽化並成膜,包括:材料供給裝置,將該固體材料汽化;以及成膜部,導入該材料供給裝置所供給之材料並成膜;該材料供給裝置,包括:汽化構件,具有供給面以接受該固體材料之供給,而將該固體材料汽化;粉末材料供給構件,將粉末狀的該固體材料供給至該汽化構件之供給面上;材料分散構件,安裝於該粉末材料供給構件,配置成與該汽化構件的供給面之間產生間隙,將粉末狀之該固體材料分散至該汽化構件的供給面上;以及移動機構,相對於該材料分散構件而移動該汽化構件。 A film forming apparatus that vaporizes and forms a solid material, comprising: a material supply device that vaporizes the solid material; and a film forming portion that introduces a material supplied from the material supply device and forms a film; the material supply device includes: a vaporization member having a supply surface for receiving a supply of the solid material to vaporize the solid material; a powder material supply member supplying the powdered solid material to a supply surface of the vaporization member; and a material dispersion member mounted to the a powder material supply member configured to generate a gap with a supply surface of the vaporization member to disperse the powdery solid material onto a supply surface of the vaporization member; and a moving mechanism to move the vaporization relative to the material dispersion member member.
TW101121811A 2011-06-29 2012-06-18 Materials supply device and deposition device TW201316588A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011143965A JP2013010990A (en) 2011-06-29 2011-06-29 Material feeder and film forming apparatus

Publications (1)

Publication Number Publication Date
TW201316588A true TW201316588A (en) 2013-04-16

Family

ID=47423928

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101121811A TW201316588A (en) 2011-06-29 2012-06-18 Materials supply device and deposition device

Country Status (3)

Country Link
JP (1) JP2013010990A (en)
TW (1) TW201316588A (en)
WO (1) WO2013002030A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI696650B (en) * 2017-02-21 2020-06-21 日商愛發科股份有限公司 Film formation method, film formation apparatus, method of manufacturing element structure, and element structure manufacturing apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2984085B2 (en) * 1991-05-10 1999-11-29 日本電子株式会社 Powder supply device
JP4697411B2 (en) * 2005-07-13 2011-06-08 住友電気工業株式会社 Vacuum deposition apparatus and operation method of vacuum deposition apparatus
JP5114288B2 (en) * 2008-05-16 2013-01-09 株式会社アルバック Film forming apparatus and organic thin film forming method
JP2010144221A (en) * 2008-12-18 2010-07-01 Tokyo Electron Ltd Raw material gas generator and film-deposition apparatus
CN102414339A (en) * 2009-04-24 2012-04-11 东京毅力科创株式会社 Vapor deposition apparatus and vapor deposition method
JP2011105966A (en) * 2009-11-13 2011-06-02 Panasonic Corp Device for supplying film forming material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI696650B (en) * 2017-02-21 2020-06-21 日商愛發科股份有限公司 Film formation method, film formation apparatus, method of manufacturing element structure, and element structure manufacturing apparatus

Also Published As

Publication number Publication date
JP2013010990A (en) 2013-01-17
WO2013002030A1 (en) 2013-01-03

Similar Documents

Publication Publication Date Title
JP5186243B2 (en) Steam generator, vapor deposition device
KR101283396B1 (en) Vapor deposition apparatus and vapor deposition method
JP4653089B2 (en) Vapor deposition source using pellets for manufacturing OLEDs
US20120225206A1 (en) Apparatus and Process for Atomic Layer Deposition
KR20060025529A (en) Thin-film deposition evaporator
KR101132581B1 (en) Organic-material vapor generator, film deposition source, and film deposition apparatus
EP0740710B1 (en) Magnetron sputtering apparatus for compound thin films
EP2190263B1 (en) Process for producing thin organic film
KR101206162B1 (en) Thermal Induced Sublimation Technology with downward evaporation for large-sized OLED manufacturing
TW201316588A (en) Materials supply device and deposition device
KR101324290B1 (en) Source supply device of substrate manufacturing apparatus
KR100624767B1 (en) OLED evaporation system using shutter rotation for continuous deposition process
JP2009263751A (en) Deposition apparatus
JP2019518131A (en) Mass production equipment for high resolution AMOLED devices using evaporation sources
JP2004204289A (en) Apparatus and method for forming film, and apparatus and method for manufacturing display panel
KR100813199B1 (en) The evaporators with the openings having different angles and apparatus for vapor deposition of thin film using the evaporators
KR101363395B1 (en) Gas injection appartus and Apparatus for depositing the organic thin film using the same and Organic thin filmdeposition method
KR101488944B1 (en) Apparatus for supplying evaporation material and Apparatus for deposition having the same
JP2004307974A (en) Apparatus and method for manufacturing thin film
KR100709199B1 (en) Organic matter sputtering apparatus and sputtering method using the same
JP2005007328A (en) Apparatus and method for manufacturing thin film