TWI695422B - Cmp晶圓清洗設備 - Google Patents
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Abstract
本發明揭露一種CMP晶圓清洗設備,包括依次排列的清洗輸入單元、兆聲清洗單元、第一刷洗單元、第二刷洗單元、甩乾單元,傳輸機械手和翻轉機械手位於清洗設備的上方,傳輸機械手包括水平運動軸、垂直運動軸和晶圓抓取裝置,可將晶圓在所述單元之間傳輸,翻轉機械手將所述晶圓抓取裝置中的晶圓抓取並翻轉。除此之外,還包括緩衝單元,所述緩衝單元位於清洗輸入單元的前方,可以臨時存放晶圓。還包括拋光晶圓通道,其位於清洗輸入單元和兆聲清洗單元之間,方便CMP步驟前的晶圓進入拋光區域時穿過清洗設備。本發明引進了緩衝單元,當CMP晶圓清洗設備發生故障時,對於拋光好的晶圓就可以實現安全儲存,也可以有效解決位於程序轉換之間的晶圓的安全儲存問題。
Description
本發明屬於晶圓磨削或拋光製程技術領域,涉及應用於CMP後的晶圓清洗領域的一種CMP晶圓清洗設備。
隨著半導體產業的迅速發展,積體電路特徵尺寸不斷趨於微細化,半導體晶片不斷地朝小體積、高電路密集度、快速、低耗電方向發展,積體電路現已進入ULSI亞微米級的技術階段。伴隨著矽晶片直徑的逐漸增大,元件內刻線寬度逐步縮小,金屬層數的增多,因此半導體薄膜表面的高平坦化對器件的高性能、低成本、高成品率有著重要的影響,這導致對矽晶片表面的平整度要求將日趨嚴格。
目前,作為唯一能獲得全域平面化效果的平整化技術化學機械拋光技術,化學機械平坦化(Chemical Mechanical Planarization,CMP)技術已經發展整合在線量測、在線終點檢測、清洗等技術於一體的化學機械拋光技術,是積體電路向微細化、多層化、薄型化、平坦化製程發展的產物。同時也是晶圓由200mm向300mm乃至更大直徑過渡、提高生產率、降低製造成本、襯底全域平坦化所必需的製程技術。在晶圓進行CMP加工後,會在晶圓表面殘留加工的移除物和拋光液,為了及時去除晶圓表面的污染物,CMP設備需要搭配清洗設備使用。
目前,主流的清洗設備的配置有晶圓垂直方式和晶圓水平方式,每種設備的清洗單元配置又不相同。垂直方式的清洗單元可以節省設備空間,兆聲清洗和刷洗的製程一致性更好,但是甩乾過程中由於受重力影響,乾燥效果不如水平方式,而水平方式的清洗單元又不利於污染物即時移出晶圓表面。因此需要根據清洗單元和甩乾單元的特性,綜合考慮晶圓的放置方式,以及還要考慮晶圓放置方式的轉換如何具體實現。另外,CMP晶圓清洗設備一旦發生故障時,已經完成拋光程序的晶圓如何確保安全儲存,不致晶圓表面的清潔度受到影響也是一個需要考慮和解決的問題。
本發明目的在於針對各種清洗單元的不同配置方案,提供相應的傳輸方式,並對現有晶圓清洗過程中當CMP晶圓清洗設備發生故障時,對於已經完成拋光的晶圓如何確保安全儲存的問題提出一種解決方案,可以有效解決位於程序轉換之間的晶圓的安全儲存問題。
為此目的,本發明提出的技術方案為一種CMP晶圓清洗設備,包括依次排列的清洗輸入單元、兆聲清洗單元、第一刷洗單元、第二刷洗單元、甩乾單元,傳輸機械手和翻轉機械手位於CMP晶圓清洗設備的上方,傳輸機械手包括水平運動軸、垂直運動軸和晶圓抓取裝置,可將晶圓在所述單元之間傳輸,翻轉機械手將所述晶圓抓取裝置中的晶圓抓取並翻轉。除此之外,還包括緩衝單元,所述緩衝單元位於清洗輸入單元的前方,可以臨時存放晶圓。
上述設備還包括拋光晶圓通道,其位於清洗輸入單元和兆聲清洗單元之間,方便CMP步驟前的晶圓進入拋光區域時穿過CMP晶圓清洗設備。
拋光晶圓通道和清洗輸入單元中的晶圓托架均可以同時或單獨移出,方便進行裝載晶圓操作。
在緩衝單元中設置噴水裝置,防止晶圓未經清洗而乾燥。
較佳地,在緩衝單元中可以臨時存放2-10片晶圓。
較佳地,清洗和刷洗過程中晶圓處於垂直方向,在甩乾過程中晶圓處於水平方向。
當垂直甩乾的製程要求可以滿足加工要求時,清洗、刷洗、甩乾過程中晶圓均處於垂直方向。
晶圓從水平到垂直狀態的轉換藉由傳輸機械手翻轉,也可以通過獨立的翻轉機械手實現。
傳輸機械手在清洗輸入單元至甩乾單元的方向上依次包括晶圓抓取裝置一和晶圓抓取裝置二。
在清洗容量允許的條件下,靠近甩乾單元側的晶圓抓取裝置一可以自帶晶圓翻轉功能,以省掉一個翻轉機械手。
與習知技術相比,本發明具有以下有益技術效果:
1、本發明引進的緩衝單元可以讓整個CMP晶圓清洗設備容錯能力更強,晶圓清洗過程中,當CMP晶圓清洗設備發生故障時,對於已經完成拋光的晶圓就可以實現安全儲存,也可以有效解決位於程序轉換之間的晶圓的安全儲存問題。
2、本發明為更有效地利用設備的空間,CMP晶圓清洗設備還可以包括拋光晶圓通道,位於清洗輸入單元和兆聲清洗單元之間,方便CMP步驟前的晶圓進入拋光區域時穿過CMP晶圓清洗設備。
3、根據晶圓清洗製程要求的不同,各清洗單元可以全部為垂直方式,也可以將甩乾單元變成水平方式。
4、傳輸機械手通過採用將兩套晶圓抓取裝置整合在一套水平運動軸上的設計,提高了傳輸效率,避免了多套水平軸的設計可能存在的相互碰撞的隱患。
1:清洗輸入單元
2:兆聲清洗單元
3:刷洗單元
4:刷洗單元
5:甩乾單元
6:傳輸機械手
601:水平運動軸
602:垂直運動軸
603:晶圓抓取裝置一
604:晶圓抓取裝置二
7:翻轉機械手
8:緩衝單元
9:晶圓
10:拋光晶圓通道
11:晶圓托架
12:晶圓托架
第1圖為本發明CMP晶圓清洗設備的結構圖;第2圖為CMP晶圓清洗設備的立體效果圖;第3圖為第一個實施例的立體效果圖;第4圖為第二個實施例的立體效果圖;第5圖為第三個實施例的立體效果圖。
下面結合圖式對本發明作進一步詳細的說明。
如第1圖和第2圖所示,本發明提供的用於CMP後清洗的CMP晶圓清洗設備包括緩衝單元8、清洗輸入單元1、拋光晶圓通道10、兆聲清洗單元2、刷洗單元3、刷洗單元4、甩乾單元5、傳輸機械手6和翻轉機械手7。
CMP晶圓清洗設備中的緩衝單元8、清洗輸入單元1、拋光晶圓通道10、兆聲清洗單元2、刷洗單元3、刷洗單元4和甩乾單元5依次排成一排。在清洗單元的上方設置一組傳輸機械手6。所述傳輸機械手6包括水平運動軸601、垂直運動軸602、晶圓抓取裝置一603和晶圓抓取裝置二604。
為方便CMP之前的晶圓進入拋光區域時容易穿過清洗單元,在清洗單元中設置有拋光晶圓通道10。拋光後的晶圓9需要立即進行清洗,待清洗晶圓9首先被放至清洗輸入單元1,為防止晶圓9在等待的過程中變乾燥,清洗輸入單元1中設計有噴水裝置。
待下一個清洗單元兆聲清洗單元2完成加工後,傳輸機械手6的晶圓抓取裝置二604沿垂直運動軸602抓取清洗輸入單元1中的晶圓9,晶圓抓取裝置一603和晶圓抓取裝置二604沿水平運動軸601傳輸到兆聲清洗單元2上方,晶圓抓取裝置一603沿垂直運動軸602抓取兆聲清洗單元2中的晶圓9,晶圓抓取裝置二604沿垂直運動軸602放置晶圓9至兆聲清洗單元2中。
待下一個清洗單元刷洗單元3完成加工後,晶圓抓取裝置一603和晶圓抓取裝置二604沿水平運動軸601傳輸到刷洗單元3上方,晶圓抓取裝置二604沿垂直運動軸602抓取刷洗單元3中的晶圓9,晶圓抓取裝置一603沿垂直運動軸602放置晶圓9至刷洗單元3中。
待下一個清洗單元刷洗單元4完成加工後,晶圓抓取裝置一603和晶圓抓取裝置二604沿水平運動軸601傳輸到刷洗單元4上方,晶圓抓取裝置一603沿垂直運動軸602抓取刷洗單元4中的晶圓9,晶圓抓取裝置二604沿垂直運動軸602放置晶圓9至刷洗單元4中。
待下一個清洗單元甩乾單元5完成加工後,翻轉機械手7將晶圓抓取裝置一603中的晶圓9抓取並翻轉放置甩乾單元5中。晶圓9在甩乾單元5中加工完畢後完成整個清洗流程,晶圓9被其他設備機械手取走。如此循環,進行晶圓9的清洗加工。
當清洗單元中的某一個或多個單元出現故障時,清洗輸入單元1中的晶圓9將由晶圓抓取裝置二604放至緩衝單元8中。根據拋光設備的容量,緩衝單元8可以設計成可容納2至10片晶圓9的位置。
另外,本發明的CMP晶圓清洗設備一般還整合CMP拋光設備和設備前端單元模組(EFEM)。所述CMP晶圓清洗設備和CMP拋光設備之間設置有負責傳輸晶圓的機械手。
晶圓在CMP拋光設備中加工完成後,被機械手傳輸至本發明的清洗輸入單元1中,在傳輸機械手6和翻轉機械手7的參與下,晶圓9依次經過兆聲清洗單元2、刷洗單元3、刷洗單元4和甩乾單元5,完成整個清洗流程,EFEM中的機械手最後在甩乾單元5中取走晶圓9。
所述整合的CMP拋光設備可同時拋光2片以上數量不等的晶圓,為了防止本發明的CMP晶圓清洗設備發生故障後,拋光後的晶圓無法安全儲存,在本發明的CMP晶圓清洗設備中設計有緩衝單元8。根據集成的CMP拋光設備的加工容量不同,所述緩衝單元8中可以臨時存放2片至10片晶圓,在緩衝單元8中設計有噴水裝置,防止晶圓未經清洗而乾燥。
作為實施例,如第3圖所示,清洗輸入單元1和拋光晶圓通道10可以設計成可以移動的方式。當CMP拋光設備中有晶圓需要清洗時,清洗輸入單元1中的晶圓托架11移出槽體,進行裝載晶圓操作,晶圓托架11裝載晶圓後,回到清洗輸入單元1中。同樣的,需要進行拋光的晶圓,從EFEM放至拋光晶圓通道10中的晶圓托架12上,晶圓托架12可以移出相應距離,方便CMP拋光設備的機械手取走晶圓。清洗的晶圓托架11和通道的晶圓托架12的移動既可以是同時
的,也可以設計成以相互獨立方式移動。此種設計,可以縮短CMP拋光設備中機械手的行程,減少設備的占地面積。
作為第二個實施例,如第4圖所示,晶圓抓取裝置一603可以設計成帶有晶圓翻轉功能的方式。這樣可以省掉一個翻轉機械手,但是傳輸時間會有增加。在清洗容量允許的條件下可以採用此例。
作為第三個實施例,如第5圖所示,所有清洗單元設計成垂直方式,這樣就避免了晶圓9在進入甩乾單元5時進行翻轉。晶圓傳輸單元機械結構簡單,傳輸效率高。當垂直甩乾的製程要求可以滿足加工要求時,可以採用此實施例。
以上具體實施方式的描述並不用以限制本發明,凡在本發明的精神和原則之內所作的任何修改、等同替換、改進等,均應包含在本發明的保護範圍之內。
2:兆聲清洗單元
3:刷洗單元
4:刷洗單元
5:甩乾單元
6:傳輸機械手
7:翻轉機械手
8:緩衝單元
9:晶圓
10:拋光晶圓通道
11:晶圓托架
12:晶圓托架
Claims (10)
- 一種化學機械平坦化(CMP)晶圓清洗設備,包括依次排列的清洗輸入單元(1)、兆聲清洗單元(2)、第一刷洗單元(3)、第二刷洗單元(4)及甩乾單元(5);傳輸機械手(6)及翻轉機械手(7)位於該化學機械平坦化晶圓清洗設備的上方,該傳輸機械手(6)包括水平運動軸(601)、垂直運動軸(602)及晶圓抓取裝置,可將晶圓在該些單元之間傳輸,該翻轉機械手(7)將該晶圓抓取裝置中的晶圓抓取並翻轉;該化學機械平坦化晶圓清洗設備進一步包括緩衝單元(8),該緩衝單元(8)位於該清洗輸入單元(1)的前方,可以臨時存放晶圓。
- 如申請專利範圍第1項所述的化學機械平坦化晶圓清洗設備,其包括拋光晶圓通道(10),位於該清洗輸入單元(1)及該兆聲清洗單元(2)之間,以方便待化學機械拋光的晶圓進入拋光區域時穿過該化學機械平坦化晶圓清洗設備。
- 如申請專利範圍第2項所述的化學機械平坦化晶圓清洗設備,其中,該拋光晶圓通道(10)及該清洗輸入單元(1)中的晶圓托架均可以同時或單獨移出,方便進行裝載晶圓操作。
- 如申請專利範圍第1項所述的化學機械平坦化晶圓清洗設備,其中,在該緩衝單元(8)中設置噴水裝置,防止晶圓未經清洗而乾燥。
- 如申請專利範圍第1項所述的化學機械平坦化晶圓清洗設備,其中,在該緩衝單元(8)中可以臨時存放複數片晶圓。
- 如申請專利範圍第1項所述的化學機械平坦化晶圓清洗設備,其中,清洗及刷洗過程中晶圓處於垂直方向,在甩乾過程 中晶圓處於水平方向。
- 如申請專利範圍第1項所述的化學機械平坦化晶圓清洗設備,其中,清洗、刷洗、甩乾過程中晶圓均處於垂直方向。
- 如申請專利範圍第1項所述的化學機械平坦化晶圓清洗設備,其中,晶圓在水平及垂直狀態之間的轉換藉由該傳輸機械手(6)或獨立的該翻轉機械手(7)實現。
- 如申請專利範圍第1項所述的化學機械平坦化晶圓清洗設備,其中,該傳輸機械手(6)包括晶圓抓取裝置一(603)和晶圓抓取裝置二(604)。
- 如申請專利範圍第9項所述的化學機械平坦化晶圓清洗設備,其中,靠近甩乾單元側的該晶圓抓取裝置一(603)自帶晶圓翻轉功能,以省掉該翻轉機械手(7)。
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CN110364474B (zh) * | 2019-06-28 | 2021-08-03 | 上海提牛机电设备有限公司 | 一种陶瓷盘清洗用机械手机构及清洗系统 |
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CN112635374A (zh) * | 2020-12-09 | 2021-04-09 | 若名芯半导体科技(苏州)有限公司 | 一种晶圆cmp后清洗的搬送方法 |
CN112701038B (zh) * | 2020-12-23 | 2023-07-04 | 华虹半导体(无锡)有限公司 | Cmp机台联动方法及系统 |
CN112614802B (zh) * | 2021-03-08 | 2021-07-06 | 杭州众硅电子科技有限公司 | 一种用于cmp清洗单元搬运晶圆的机械手及方法 |
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