TWI695357B - 半導體裝置，電子構件及電子裝置 - Google Patents

半導體裝置，電子構件及電子裝置 Download PDF

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Publication number
TWI695357B
TWI695357B TW104128871A TW104128871A TWI695357B TW I695357 B TWI695357 B TW I695357B TW 104128871 A TW104128871 A TW 104128871A TW 104128871 A TW104128871 A TW 104128871A TW I695357 B TWI695357 B TW I695357B
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Taiwan
Prior art keywords
transistor
source
drain
electrically connected
transistors
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TW104128871A
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English (en)
Chinese (zh)
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TW201621862A (zh
Inventor
高橋圭
佐藤圭太
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日商半導體能源研究所股份有限公司
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Publication of TW201621862A publication Critical patent/TW201621862A/zh
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3696—Generation of voltages supplied to electrode drivers
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3692—Details of drivers for data electrodes suitable for passive matrices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0297—Special arrangements with multiplexing or demultiplexing of display data in the drivers for data electrodes, in a pre-processing circuitry delivering display data to said drivers or in the matrix panel, e.g. multiplexing plural data signals to one D/A converter or demultiplexing the D/A converter output to multiple columns
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
TW104128871A 2014-09-05 2015-09-01 半導體裝置，電子構件及電子裝置 TWI695357B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-181113 2014-09-05
JP2014181113 2014-09-05

Publications (2)

Publication Number Publication Date
TW201621862A TW201621862A (zh) 2016-06-16
TWI695357B true TWI695357B (zh) 2020-06-01

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TW104128871A TWI695357B (zh) 2014-09-05 2015-09-01 半導體裝置，電子構件及電子裝置

Country Status (4)

Country Link
US (1) US9607569B2 (enExample)
JP (1) JP6695667B2 (enExample)
TW (1) TWI695357B (enExample)
WO (1) WO2016034988A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6830765B2 (ja) 2015-06-08 2021-02-17 株式会社半導体エネルギー研究所 半導体装置
US9780779B2 (en) 2015-08-07 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US11144824B2 (en) * 2019-01-29 2021-10-12 Silicon Storage Technology, Inc. Algorithms and circuitry for verifying a value stored during a programming operation of a non-volatile memory cell in an analog neural memory in deep learning artificial neural network
US10921855B1 (en) * 2019-08-29 2021-02-16 Synaptics Incorporated Interposer for a display driver integrated circuit chip
WO2022045414A1 (ko) * 2020-08-31 2022-03-03 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
JP7510389B2 (ja) * 2021-07-08 2024-07-03 セイコーエプソン株式会社 印刷装置
JP7510391B2 (ja) 2021-07-08 2024-07-03 セイコーエプソン株式会社 印刷装置
US12112681B2 (en) * 2021-09-02 2024-10-08 Apple Inc. Electronic devices with displays and interposer structures

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2004191573A (ja) * 2002-12-10 2004-07-08 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、および電子機器
JP2007037191A (ja) * 2006-10-06 2007-02-08 Seiko Epson Corp 電圧生成回路、データドライバ及び表示装置
CN102163400A (zh) * 2010-02-19 2011-08-24 瑞萨电子株式会社 解码器及使用该解码器的显示装置的数据驱动器

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JPS5518016A (en) 1978-07-26 1980-02-07 Hitachi Ltd Voltage divider
JP3223997B2 (ja) * 1994-09-13 2001-10-29 シャープ株式会社 論理回路及び液晶表示装置
US7749818B2 (en) * 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4179194B2 (ja) * 2004-03-08 2008-11-12 セイコーエプソン株式会社 データドライバ、表示装置及びデータドライバの制御方法
JP3922261B2 (ja) * 2004-03-08 2007-05-30 セイコーエプソン株式会社 データドライバ及び表示装置
JP3970894B2 (ja) * 2004-07-08 2007-09-05 沖電気工業株式会社 液晶表示装置の駆動回路
JP4676183B2 (ja) 2004-09-24 2011-04-27 パナソニック株式会社 階調電圧生成装置，液晶駆動装置，液晶表示装置
JP2007114514A (ja) * 2005-10-20 2007-05-10 Hitachi Displays Ltd 表示装置
JP4915841B2 (ja) 2006-04-20 2012-04-11 ルネサスエレクトロニクス株式会社 階調電圧発生回路、ドライバｉｃ、及び液晶表示装置
JP2012234088A (ja) * 2011-05-06 2012-11-29 Renesas Electronics Corp 駆動回路及びそれを備えた表示装置
US9711536B2 (en) 2014-03-07 2017-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004191573A (ja) * 2002-12-10 2004-07-08 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、および電子機器
JP2007037191A (ja) * 2006-10-06 2007-02-08 Seiko Epson Corp 電圧生成回路、データドライバ及び表示装置
CN102163400A (zh) * 2010-02-19 2011-08-24 瑞萨电子株式会社 解码器及使用该解码器的显示装置的数据驱动器

Also Published As

Publication number Publication date
TW201621862A (zh) 2016-06-16
US20160071478A1 (en) 2016-03-10
JP6695667B2 (ja) 2020-05-20
JP2016057618A (ja) 2016-04-21
WO2016034988A1 (en) 2016-03-10
US9607569B2 (en) 2017-03-28

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