JP2016057618A - 半導体装置、電子部品、及び電子機器 - Google Patents
半導体装置、電子部品、及び電子機器 Download PDFInfo
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- JP2016057618A JP2016057618A JP2015171895A JP2015171895A JP2016057618A JP 2016057618 A JP2016057618 A JP 2016057618A JP 2015171895 A JP2015171895 A JP 2015171895A JP 2015171895 A JP2015171895 A JP 2015171895A JP 2016057618 A JP2016057618 A JP 2016057618A
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- transistor
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- transistors
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Classifications
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G—PHYSICS
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- G—PHYSICS
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3685—Details of drivers for data electrodes
- G09G3/3692—Details of drivers for data electrodes suitable for passive matrices only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0297—Special arrangements with multiplexing or demultiplexing of display data in the drivers for data electrodes, in a pre-processing circuitry delivering display data to said drivers or in the matrix panel, e.g. multiplexing plural data signals to one D/A converter or demultiplexing the D/A converter output to multiple columns
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
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Abstract
Description
本実施の形態では、本発明の一態様である、パストランジスタロジック(以下、PTL)について説明する。
PTLは、入力されるデジタルの信号をアナログの信号に変換する機能を有する回路である。PTLに入力されるデータ信号はデジタルの信号であり、該デジタルのデータ信号をアナログの信号に変換する。PTLは、D/A(デジタル/アナログ)変換回路、あるいは単に回路という場合がある。なお、PTLは、ドライバICに適用することが可能である。図1は、PTLの一例であるPTL10の回路構成を示している。
次に、PTL10におけるトランジスタの配置例について、図4を用いて具体的に説明する。
上記実施の形態は、トランジスタにプレーナー型トランジスタを用いた場合の一例であるが、以下ではトランジスタにFIN型トランジスタを用いた場合について説明を行う。
図10は、上述のPTL10とは異なるPTL30の回路構成を示している。
本実施の形態では、レベルシフタLS、パストランジスタロジックPTL、及びアンプAMPを含む表示装置の回路ブロック図について説明する。図11には、ソースドライバ、ゲートドライバ、表示部の回路ブロック図を示している。
本実施の形態では、上述の実施の形態で説明した半導体装置を用いた応用例として、電子部品に適用する例、該電子部品を表示モジュールに適用する例、該表示モジュールの応用例、及び電子機器への応用例について、図15乃至図18を用いて説明する。
DL1 配線
DL2 配線
GE ゲート
GL ゲート線
ML 配線
N1 トランジスタ
N2 トランジスタ
P1 トランジスタ
P2 トランジスタ
SL ソース線
SEM 半導体
V1 高電源電位
VDD 高電源電位
VSS 低電源電位
10 PTL
11 トランジスタ
12 トランジスタ
13 トランジスタ
14 トランジスタ
15 トランジスタ
16 トランジスタ
17 トランジスタ
18 トランジスタ
21 トランジスタ
22 トランジスタ
23 トランジスタ
24 トランジスタ
25 トランジスタ
26 トランジスタ
27 トランジスタ
28 トランジスタ
30 PTL
100 ソースドライバ
101 ゲートドライバ
102 表示部
103 画素
103a 画素回路
103b 画素回路
103c 画素回路
104 補正回路
201 基板
202 チャネル
203a 不純物領域
203b 不純物領域
204a 不純物領域
204b 不純物領域
205 素子分離層
207 側壁絶縁層
208 絶縁膜
211 基板
212 チャネル
213a 不純物領域
213b 不純物領域
214a 不純物領域
214b 不純物領域
215 素子分離層
217 側壁絶縁層
218 絶縁膜
221 半導体
222 半導体
223 半導体
550 トランジスタ
552 トランジスタ
554 トランジスタ
560 容量素子
562 容量素子
570 液晶素子
572 発光素子
664 発光素子
665 トランジスタ
666 トランジスタ
667 トランジスタ
668 容量素子
700 電子部品
701 半導体装置
702 インターポーザ
703 パッケージ
704 エポキシ樹脂
705 ワイヤー
706 バンプ端子
711 表示部
712A ゲートドライバ
712B ゲートドライバ
713 基板
714 ソースドライバ
715 FPC
716 外部回路基板
901 筐体
902 筐体
903a 表示部
903b 表示部
904 選択ボタン
905 キーボード
910 電子書籍端末
911 筐体
912 筐体
913 表示部
914 表示部
915 軸部
916 電源
917 操作キー
918 スピーカー
921 筐体
922 表示部
923 スタンド
924 リモコン操作機
930 本体
931 表示部
932 スピーカー
933 マイク
934 操作ボタン
941 本体
942 表示部
943 操作スイッチ
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (7)
- 第1乃至第7のトランジスタと、
第1乃至第5の配線と、を有し、
前記第1のトランジスタのゲートは、前記第1の配線に電気的に接続され、
前記第1のトランジスタのソース及びドレインの一方は、第1の電圧が与えられ、
前記第1のトランジスタのソース及びドレインの他方は、前記第5のトランジスタのソース及びドレインの一方に電気的に接続され、
前記第2のトランジスタのゲートは、前記第2の配線に電気的に接続され、
前記第2のトランジスタのソース及びドレインの一方は、第2の電圧が与えられ、
前記第2のトランジスタのソース及びドレインの他方は、前記第5のトランジスタのソース及びドレインの一方に電気的に接続され、
前記第3のトランジスタのゲートは、前記第1の配線に電気的に接続され、
前記第3のトランジスタのソース及びドレインの一方は、第3の電圧が与えられ、
前記第3のトランジスタのソース及びドレインの他方は、前記第6のトランジスタのソース及びドレインの一方に電気的に接続され、
前記第4のトランジスタのゲートは、前記第2の配線に電気的に接続され、
前記第4のトランジスタのソース及びドレインの一方は、第4の電圧が与えられ、
前記第4のトランジスタのソース及びドレインの他方は、前記第6のトランジスタのソース及びドレインの一方に電気的に接続され、
前記第5のトランジスタのゲートは、前記第3の配線に電気的に接続され、
前記第5のトランジスタのソース及びドレインの他方は、前記第7のトランジスタのソース及びドレインの一方に電気的に接続され、
前記第6のトランジスタのゲートは、前記第4の配線に電気的に接続され、
前記第6のトランジスタのソース及びドレインの他方は、前記第7のトランジスタのソース及びドレインの一方に電気的に接続され、
前記第7のトランジスタのゲートは、前記第5の配線に電気的に接続され、
前記第1の配線は第1の信号が与えられ、
前記第2の配線は前記第1の信号の反転信号が与えられ、
前記第3の配線は第2の信号が与えられ、
前記第4の配線は前記第2の信号の反転信号が与えられ、
前記第5の配線は第3の信号が与えられ、
前記第1乃至第4のトランジスタのチャネル幅は、前記第5乃至第7のトランジスタのチャネル幅よりも小さいことを特徴とする半導体装置。 - 請求項1において、前記第1乃至第4のトランジスタは、全て一列に配置されていることを特徴とする半導体装置。
- 請求項1または請求項2において、前記第1乃至第7のトランジスタの極性は、全て同じであることを特徴とする半導体装置。
- 請求項1乃至3のいずれか一項において、前記第5乃至第7のトランジスタのチャネル幅は、前記第1乃至第4のトランジスタのチャネル幅に対して、2倍より大きく、8倍未満であることを特徴とする半導体装置。
- 請求項1乃至4のいずれか一項において、前記第1乃至第3の信号に応じて、前記第1乃至第4の電圧のいずれか一つが選択され、前記第7のトランジスタのソース及びドレインの他方に出力されることを特徴とする半導体装置。
- 請求項1乃至5のいずれか一項に記載の半導体装置と、
前記半導体装置に電気的に接続されたバンプ端子と、を有することを特徴とする電子部品。 - 請求項6に記載の電子部品と、
表示装置と、を有することを特徴とする電子機器。
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US10921855B1 (en) * | 2019-08-29 | 2021-02-16 | Synaptics Incorporated | Interposer for a display driver integrated circuit chip |
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