TWI695187B - Pattern exposure device - Google Patents
Pattern exposure device Download PDFInfo
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- TWI695187B TWI695187B TW108148374A TW108148374A TWI695187B TW I695187 B TWI695187 B TW I695187B TW 108148374 A TW108148374 A TW 108148374A TW 108148374 A TW108148374 A TW 108148374A TW I695187 B TWI695187 B TW I695187B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/12—Scanning systems using multifaceted mirrors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
Abstract
Description
本發明係關於一種使照射在被照射體上之光束之點光掃描之光束掃描裝置及光束掃描方法、使點光掃描以在被照射體描繪既定圖案之圖案描繪裝置及圖案描繪方法、使用該圖案描繪方法之元件製造方法、用於圖案描繪裝置及光束掃描裝置之雷射光源裝置。The present invention relates to a beam scanning device and a beam scanning method for scanning spot light of a light beam irradiated on an irradiated body, a pattern drawing device and a pattern drawing method for scanning a spot light to draw a predetermined pattern on an irradiated body, and using the same Element manufacturing method for pattern drawing method, laser light source device for pattern drawing device and beam scanning device.
如日本特開昭61-134724號公報及日本特開2001-133710號公報所揭示,已知有一種雷射照射裝置、雷射描繪裝置,該雷射照射裝置、雷射描繪裝置藉由半反射鏡將來自一個雷射振盪機(雷射光束光源)之雷射光束分割為二,使分割後之雷射光束之各個射入二個多面鏡(旋轉多面鏡),藉此使二個雷射光束在被描繪體上掃描。又,在日本特開2001-133710號公報亦揭示射入二個多面鏡之分割後之二個雷射光束之各個回應描繪資料被ON/OFF之AOM(聲光調變元件)調變。As disclosed in Japanese Patent Laid-Open No. 61-134724 and Japanese Patent Laid-Open No. 2001-133710, there is known a laser irradiation device and a laser drawing device. The laser irradiation device and the laser drawing device use semi-reflection The mirror divides the laser beam from a laser oscillator (laser beam light source) into two, so that each of the divided laser beams enters two polygon mirrors (rotating polygon mirror), thereby making the two lasers The light beam is scanned on the object to be depicted. In addition, Japanese Patent Application Laid-Open No. 2001-133710 also discloses that the response drawing data of the two divided laser beams incident on the two polygon mirrors is modulated by the ON/OFF AOM (Acousto-optic Modulation Element).
然而,在多面鏡進行之光束掃描,依據多面鏡之反射面數、多面鏡後之光學系(fθ透鏡等)之入射條件等,會有在多面鏡之旋轉中存在無法使射入之雷射光束有效地反射向被描繪體之期間之情形。是以,即使如以往般藉由半反射鏡將雷射光束分割為二並使其射入二個多面鏡,亦會存在雷射光束無法有效地照射至被描繪體之期間、亦即非描繪期間,無法有效地活用來自光源之雷射光束。However, depending on the number of reflection surfaces of the polygon mirror and the incident conditions of the optical system (fθ lens, etc.) behind the polygon mirror, there may be laser beams that cannot be incident during the rotation of the polygon mirror. The situation in which the light beam is effectively reflected toward the depicted object. Therefore, even if the laser beam is divided into two by the half mirror as usual and enters the two polygon mirrors, there will be a period when the laser beam cannot effectively illuminate the object to be drawn, that is, non-drawing During this period, the laser beam from the light source cannot be effectively used.
本發明第1形態之圖案描繪裝置,係藉由雷射光之掃描點在被照射體上描繪既定圖案,其特徵在於,具備:光源裝置,射出該雷射光;複數個描繪單元,為了使該雷射光射入而產生該掃描點,包含使該雷射光掃描之光掃描構件與光學透鏡系,設置成使該掃描點在該被照射體上之不同區域掃描;以及複數個選擇用光學元件,為了切換是否使來自該光源裝置之該雷射光射入該複數個描繪單元中已選擇之該描繪單元,沿著來自該光源裝置之該雷射光之行進方向直列配置。The pattern drawing device of the first aspect of the present invention draws a predetermined pattern on the irradiated body by the scanning point of laser light, and is characterized by comprising: a light source device that emits the laser light; a plurality of drawing units, in order to make the laser The scanning point is generated by the incident light, and includes a light scanning member and an optical lens system for scanning the laser light, which are arranged to scan the scanning point in different areas on the irradiated body; and a plurality of selection optical elements, in order to It is switched whether the laser light from the light source device enters the selected drawing unit of the plurality of drawing units, and is arranged in line along the traveling direction of the laser light from the light source device.
本發明第2形態之圖案描繪裝置,係藉由雷射光之掃描點在被照射體上描繪既定圖案,其特徵在於,具備:光源裝置,射出該雷射光;複數個描繪單元,為了使該雷射光射入而產生該掃描點,包含使該雷射光掃描之光掃描構件與光學透鏡系,設置成使該掃描點在該被照射體上之不同區域掃描;複數個選擇用光學元件,為了使來自該光源裝置之該雷射光選擇性地射入該複數個描繪單元,沿著來自該光源裝置之該雷射光之行進方向直列配置;以及描繪用光調變器,根據規定待藉由該掃描點在該被照射體上描繪之圖案之該複數個描繪單元之各個之描繪資料,調變射入該複數個選擇用光學元件之該雷射光之強度。The pattern drawing device of the second aspect of the present invention draws a predetermined pattern on the irradiated body by the scanning point of the laser light, and is characterized by comprising: a light source device that emits the laser light; a plurality of drawing units, in order to make the laser The scanning point is generated by the incident light, including the light scanning member and the optical lens system for scanning the laser light, which are arranged to scan the scanning point in different areas on the irradiated body; a plurality of selection optical elements, in order to make The laser light from the light source device selectively enters the plurality of drawing units and is arranged in line along the traveling direction of the laser light from the light source device; and a light modulator for drawing is to be passed by the scanning according to regulations Pointing the drawing data of each of the plurality of drawing units of the pattern drawn on the illuminated body, modulates the intensity of the laser light incident on the plurality of selection optical elements.
本發明第3形態之圖案描繪裝置,具備:脈衝光源裝置,產生可調整振盪週期之脈衝狀之光束;第1描繪單元,將來自該脈衝光源裝置之光束作為點光投射至被照射體上,且以該點光對該被照射體之投射期間與非投射期間以既定週期反覆之方式使該光束偏向,在該投射期間使該點光沿著該被照射體上之第1描繪線掃描;第2描繪單元,將來自該脈衝光源裝置之光束作為點光投射至該被照射體上,且以該投射期間與該非投射期間以既定週期反覆之方式使該光束偏向,在該投射期間使該點光沿著與該第1描繪線不同之該被照射體上之第2描繪線掃描;第1控制系,以在該第1描繪單元之該投射期間對應在該第2描繪單元之該非投射期間、且在該第2描繪單元之該投射期間對應在該第1描繪單元之該非投射期間之方式,同步控制該第1描繪單元與該第2描繪單元;以及第2控制系,以在該第1描繪單元之該投射期間係根據待藉由該第1描繪線描繪之圖案之第1描繪資訊控制該光束之振盪、且在該第2描繪單元之該投射期間係根據待藉由該第2描繪線描繪之圖案之第2描繪資訊控制該光束之振盪之方式,控制該脈衝光源裝置。A pattern drawing device according to a third aspect of the present invention includes: a pulse light source device that generates a pulsed light beam with an adjustable oscillation period; and a first drawing unit that projects the light beam from the pulse light source device as spot light onto the object to be irradiated, And deflect the beam with the predetermined period of the projection period and non-projection period of the spot light on the irradiated body, and scan the spot light along the first drawing line on the irradiated body during the projection period; The second drawing unit projects the light beam from the pulsed light source device as spot light onto the irradiated body, and deflects the light beam in a predetermined cycle in the projection period and the non-projection period, and deflects the beam during the projection period Spot light scans along the second drawing line on the illuminated body different from the first drawing line; the first control system is to correspond to the non-projection on the second drawing unit during the projection of the first drawing unit Period, and during the projection period of the second drawing unit corresponds to the non-projection period of the first drawing unit, the first drawing unit and the second drawing unit are synchronously controlled; and the second control system is used to The projection period of the first drawing unit controls the oscillation of the light beam according to the first drawing information of the pattern to be drawn by the first drawing line, and the projection period of the second drawing unit is based on the 2 The second drawing information of the pattern drawn by the line controls the way the light beam oscillates, and controls the pulsed light source device.
本發明第4形態之圖案描繪裝置,係一邊依據描繪資料對聚光在被照射體上之紫外雷射光之點光進行強度調變、一邊使該點光與該被照射體相對掃描,藉此在該被照射體上描繪圖案,其特徵在於,具備:雷射光源裝置,包含產生作為該紫外雷射光之來源之種光之光源部、使該種光射入並增幅之光增幅器、及從已增幅之該種光產生該紫外雷射光之波長轉換光學元件;以及描繪用調變裝置,為了對該點光進行強度調變,依據該描繪資料調變從該光源部產生之該種光之強度。The pattern drawing device of the fourth aspect of the present invention is to adjust the intensity of the spot light of the ultraviolet laser light condensed on the irradiated body according to the drawing data while scanning the spot light relative to the irradiated body, thereby A pattern is drawn on the irradiated body, which is characterized by comprising: a laser light source device including a light source unit that generates seed light as a source of the ultraviolet laser light, a light amplifier that enters and amplifies the light, and A wavelength conversion optical element that generates the ultraviolet laser light from the amplified light; and a modulation device for drawing, in order to modulate the intensity of the spot light, modulate the light generated from the light source according to the drawing data The intensity.
本發明第5形態之圖案描繪方法,係一邊依據描繪資料對聚光在被照射體上之紫外雷射光之點光進行強度調變、一邊使該點光與該被照射體相對掃描,藉此在該被照射體上描繪圖案,其特徵在於,包含:轉換步驟,藉由光增幅器使作為該紫外雷射光之來源之種光增幅,藉由波長轉換光學元件將已增幅之該種光轉換成該紫外雷射光;以及調變步驟,為了對該點光進行強度調變,依據該描繪資料調變射入該光增幅器之該種光之強度。The pattern drawing method of the fifth aspect of the present invention is to scan the spot light relative to the irradiated body while adjusting the intensity of the spot light of the ultraviolet laser light condensed on the irradiated body according to the drawing data Drawing a pattern on the irradiated body, characterized by comprising: a conversion step of amplifying the seed light as the source of the ultraviolet laser light by an optical amplifier, and converting the amplified light by a wavelength conversion optical element Into the ultraviolet laser light; and a modulation step, in order to adjust the intensity of the spot light, according to the drawing data, the intensity of the light incident on the optical amplifier is modulated.
本發明第6形態之元件製造方法,包含:一邊使作為該被照射體而準備之光感應性基板往第1方向移動、一邊藉由上述第5形態之圖案描繪方法在該基板之光感應層描繪元件用圖案之動作;以及依據該光感應層之該點光之照射部分與非照射部分之不同選擇性地形成既定圖案材料之動作。A sixth aspect of the present invention is a device manufacturing method comprising: moving the photosensitive substrate prepared as the irradiated body in the first direction while using the pattern drawing method of the fifth aspect on the photosensitive layer of the substrate The action of drawing a pattern for an element; and the action of selectively forming a predetermined pattern material according to the difference between the irradiated part and the non-irradiated part of the spot light of the photosensitive layer.
本發明第7形態之雷射光源裝置,係連接於藉由聚光在被照射體上之點光描繪圖案之裝置,射出作為該點光之光束,其特徵在於,具備:第1半導體光源,回應既定週期之時脈脈衝,產生發光時間較該既定週期短且峰值強度大之急劇升降之第1脈衝光;第2半導體光源,回應該時脈脈衝,產生發光時間較該既定週期短且較該第1脈衝光之發光時間長、峰值強度小之寬廣之第2脈衝光;光纖光增幅器,供該第1脈衝光或該第2脈衝光射入;以及切換構件,根據待描繪圖案資訊之輸入,以在該點光往該被照射體上投射時使該第1脈衝光射入該光纖光增幅器、且在該點光未往該被照射體上投射時使該第2脈衝光射入該光纖光增幅器之方式,進行光學切換。A laser light source device according to a seventh aspect of the present invention is connected to a device for drawing a pattern by spot light condensed on an irradiated body, and emits a light beam as the spot light, which is characterized by comprising: a first semiconductor light source, In response to a clock pulse of a predetermined period, the first pulse light with a shorter luminescence time than the predetermined period and a sharp rise and fall of the peak intensity is generated; the second semiconductor light source, which responds to the clock pulse, generates a luminescence time shorter and longer than the predetermined period A broad second pulsed light with a long luminous time and a small peak intensity of the first pulsed light; an optical fiber optical amplifier for the first pulsed light or the second pulsed light to enter; and a switching member according to the pattern information to be drawn Input to cause the first pulsed light to enter the fiber optic amplifier when the spot light is projected on the irradiated body, and to cause the second pulsed light when the spot light is not projected on the irradiated body The way of entering the optical fiber optical amplifier is optically switched.
本發明第8形態之光束掃描裝置,係以既定位置關係配置有複數個掃描單元,該掃描單元具備使來自光源裝置之光束反覆偏向之旋轉多面鏡、及供已偏向之該光束射入且聚光成在被照射體上一維掃描之點光之投射光學系,其特徵在於,具備:光束切換構件,切換該光束之光路,以使來自該光源裝置之該光束射入複數個該掃描單元中進行該點光之一維掃描之一個該掃描單元;以及光束切換控制部,以該掃描單元之該旋轉多面鏡進行之該光束之偏向就該旋轉多面鏡之每隔至少一個反射面反覆之方式控制該光束切換構件,使複數個該掃描單元之各個依序進行該點光之一維掃描。The beam scanning device of the eighth aspect of the present invention is provided with a plurality of scanning units in a predetermined positional relationship, the scanning unit having a rotating polygon mirror that deflects the light beam from the light source device repeatedly, and the deflected light beam is incident and focused The projection optical system of spot light which is one-dimensionally scanned on the irradiated body is characterized by comprising: a beam switching member that switches the optical path of the beam so that the beam from the light source device enters the plurality of scanning units One of the scanning units that performs one-dimensional scanning of the spot light; and a beam switching control section that deflects the beam by the rotating polygon mirror of the scanning unit over every at least one reflecting surface of the rotating polygon mirror Control the light beam switching member in a manner such that each of the plurality of scanning units sequentially performs one-dimensional scanning of the spot light.
本發明第9形態之光束掃描裝置,具有複數個以既定位置關係配置有複數個掃描單元之掃描模組,該掃描單元具備為了使來自光源裝置之光束反覆偏向而以一定旋轉速度旋轉之旋轉多面鏡、及供已偏向之該光束射入且聚光成在被照射體上一維掃描之點光之投射光學系,其特徵在於,具備:光束切換構件,切換該光束之光路,以使來自該光源裝置之該光束射入複數個該掃描單元中進行該點光之一維掃描之該掃描單元;以及光束切換控制部,以各該掃描單元之該旋轉多面鏡進行之該光束之偏向在就該旋轉多面鏡之連續之反射面反覆之第1狀態、與就該旋轉多面鏡之每隔至少一個反射面反覆之第2狀態之任一者切換之方式控制該光束切換構件,使複數個該掃描單元之各個依序進行該點光之一維掃描。A beam scanning device according to a ninth aspect of the present invention has a plurality of scanning modules in which a plurality of scanning units are arranged in a predetermined positional relationship, and the scanning unit is provided with a rotating polyhedral surface that rotates at a certain rotation speed in order to deflect the light beam from the light source device repeatedly A mirror, and a projection optical system for deflecting the beam into and condensing it into spot light that is scanned one-dimensionally on the irradiated body, characterized by including: a beam switching member that switches the optical path of the beam so that The light beam of the light source device is incident on the scanning units to perform one-dimensional scanning of the spot light in the plurality of scanning units; and the beam switching control unit deflects the beam by the rotating polygon mirror of each scanning unit The beam switching member is controlled in such a manner that the first state of the continuous reflection surface of the rotating polygon mirror is repeated and the second state of every at least one reflection surface of the rotating polygon mirror is switched so that a plurality of Each of the scanning units sequentially performs one-dimensional scanning of the spot light.
本發明第10形態之光束掃描方法,係以既定位置關係配置有複數個掃描單元,對被照射體進行光束掃描,該掃描單元具備供藉由旋轉多面鏡反覆偏向之光束射入且聚光成在該被照射體上一維掃描之點光之投射光學系,其特徵在於,包含:使複數個該旋轉多面鏡同步旋轉,以使該複數個掃描單元之各個之該旋轉多面鏡之旋轉角度位置彼此成為既定相位關係之動作;以及為了依序進行複數個該掃描單元之各個進行之該點光之一維掃描,以該旋轉多面鏡進行之該光束之偏向就該旋轉多面鏡之每隔至少一個反射面反覆之方式切換該光束射入之該掃描單元之動作。A beam scanning method according to a tenth aspect of the present invention is to arrange a plurality of scanning units in a predetermined positional relationship to scan an irradiated body. The scanning unit is provided with a beam that is repeatedly deflected by a rotating polygon mirror and condensed into A projection optical system for spot light scanned one-dimensionally on the irradiated body, characterized in that it includes: synchronously rotating a plurality of the rotating polygon mirrors, so that the rotation angle of the rotating polygon mirror of each of the plurality of scanning units The operations where the positions become a predetermined phase relationship with each other; and in order to sequentially perform the one-dimensional scanning of the point light performed by each of the plurality of scanning units, the deflection of the light beam by the rotating polygonal mirror changes every time the rotating polygonal mirror At least one reflecting surface switches the action of the scanning unit into which the light beam enters repeatedly.
本發明第11形態之光束掃描方法,係藉由以既定位置關係配置有複數個掃描單元之光束掃描裝置對被照射體進行光束掃描,該掃描單元具備供藉由以一定旋轉速度旋轉之旋轉多面鏡反覆偏向之光束射入且聚光成在該被照射體上一維掃描之點光之投射光學系,其特徵在於,包含:使複數個該旋轉多面鏡同步旋轉,以使該複數個掃描單元之各個之該旋轉多面鏡之旋轉角度位置彼此成為既定相位關係之動作;以該旋轉多面鏡進行之該光束之偏向就該旋轉多面鏡之連續之反射面反覆之方式切換該光束射入之該掃描單元,藉此,複數個該掃描單元之各個依序進行該點光之一維掃描之第1掃描步驟;以該旋轉多面鏡進行之該光束之偏向就該旋轉多面鏡之每隔至少一個反射面反覆之方式切換該光束射入之該掃描單元,藉此,複數個該掃描單元之各個依序進行該點光之一維掃描之第2掃描步驟;以及切換該第1掃描步驟與該第2掃描步驟之切換步驟。The beam scanning method of the eleventh aspect of the present invention is to perform beam scanning on an irradiated body by a beam scanning device in which a plurality of scanning units are arranged in a predetermined positional relationship, the scanning unit is provided with a rotating polyhedron for rotating by a certain rotation speed A projection optical system in which a deflecting light beam of a mirror is repeatedly incident and condensed into spot light that is scanned one-dimensionally on the irradiated body, characterized in that it includes: rotating a plurality of the rotating polygon mirrors synchronously to make the plurality of scans The rotation angle positions of the rotating polygon mirrors of each unit become an action with a predetermined phase relationship; the deflection of the light beam by the rotating polygon mirror switches the incident of the light beam in a manner that the continuous reflection surface of the rotating polygon mirror is repeated The scanning unit, thereby, each of the plurality of scanning units sequentially performs the first scanning step of the one-dimensional scanning of the spot light; the deflection of the light beam by the rotating polygonal mirror is at least every second of the rotating polygonal mirror A reflective surface switches the scanning unit into which the light beam enters in a repetitive manner, whereby each of the plurality of scanning units sequentially performs the second scanning step of the one-dimensional scanning of the spot light; and switches the first scanning step and The switching step of the second scanning step.
本發明第12形態之圖案描繪方法,係使用描繪裝置,該描繪裝置將使來自光源裝置之光束之點光沿著描繪線進行主掃描之複數個掃描單元配置成各描繪線所描繪之圖案在基板上於該描繪線之主掃描方向接續,使該複數個掃描單元與該基板在與該主掃描方向交叉之副掃描方向相對移動,其特徵在於,包含:在該複數個掃描單元中,選定對應該基板在該主掃描方向之寬、或該基板上之被描繪圖案之曝光區域在該主掃描方向之寬或者位置之特定掃描單元之動作;以及根據待以該特定掃描單元之各個描繪之圖案資料對該光束進行強度調變,透過配送來自該光源裝置之該光束之光束配送單元擇一地依序供應至該特定掃描單元之各個之動作。The pattern drawing method of the twelfth aspect of the present invention uses a drawing device that configures a plurality of scanning units that perform main scanning of spot light of a light beam from a light source device along a drawing line such that the pattern drawn by each drawing line is The main scanning direction of the drawing line is continued on the substrate, so that the plurality of scanning units and the substrate are relatively moved in the sub-scanning direction crossing the main scanning direction, which is characterized by including: selecting among the plurality of scanning units The action of a specific scanning unit corresponding to the width of the substrate in the main scanning direction, or the width or position of the exposed area of the pattern drawn on the substrate in the main scanning direction; The pattern data adjusts the intensity of the light beam, and the beam distribution unit that distributes the light beam from the light source device is sequentially and sequentially supplied to each action of the specific scanning unit.
針對本發明形態之圖案描繪裝置、圖案描繪方法、光束掃描裝置、光束掃描方法、元件製造方法、及雷射光源裝置,揭示較佳實施形態並參照圖式在以下詳細加以說明。此外,本發明之形態並不限於此等實施形態,亦包含施加各種變更或改良者。亦即,以下記載之構成要素包含本發明所屬技術領域中具有通常知識者可輕易思及者及實質上相同者,以下記載之構成要素可適當地加以組合。又,在不脫離本發明要旨之範圍內可進行構成要素之各種省略、置換或變更。With respect to the pattern drawing device, pattern drawing method, beam scanning device, beam scanning method, device manufacturing method, and laser light source device according to the aspect of the present invention, preferred embodiments are disclosed and described in detail below with reference to the drawings. In addition, the form of the present invention is not limited to these embodiments, and includes various modifications or improvements. That is, the constituent elements described below include those that can be easily thought of by those having ordinary knowledge in the technical field to which the present invention belongs and are substantially the same, and the constituent elements described below can be combined as appropriate. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the gist of the present invention.
(第1實施形態)
圖1係顯示第1實施形態之包含對基板(被照射體)FS施加曝光處理之曝光裝置EX之元件製造系統10之概略構成之圖。此外,在以下說明,未特別限定下,設定以重力方向為Z方向之XYZ正交座標系,依據圖示之箭頭說明X方向、Y方向及Z方向。
(First embodiment)
1 is a diagram showing a schematic configuration of a
元件製造系統10係例如構築有製造作為電子元件之可撓性顯示器、可撓性配線、可撓性感測器等之生產線之製造系統。以下,作為電子元件,以可撓性顯示器為前提進行說明。作為可撓性顯示器,有例如有機EL顯示器、液晶顯示器等。元件製造系統10具有所謂捲筒對捲筒(Roll To Roll)方式之構造,即從捲筒狀地捲繞有可撓性片狀基板(片狀基板)FS之未圖示之供應捲筒送出基板FS,對送出之基板FS連續地施加各種處理後,以未圖示之回收捲筒捲繞各種處理後之基板FS。基板FS具有基板FS之移動方向成為長邊方向(長條),寬方向成為短邊方向之帶狀形狀。從上述供應捲筒送出之基板FS依序被程序裝置PR1、曝光裝置(圖案描繪裝置、光束掃描裝置)EX、及程序裝置PR2施加各種處理,被上述回收捲筒捲繞。The
此外,X方向係在水平面內從程序裝置PR1經過曝光裝置EX朝向程序裝置PR2之方向(搬送方向)。Y方向係在水平面內與X方向正交之方向,為基板FS之寬方向(短邊方向)。Z方向係與X方向和Y方向正交之方向(上方向),與重力作用方向平行。In addition, the X direction is a direction (transport direction) from the programming device PR1 through the exposure device EX toward the programming device PR2 in the horizontal plane. The Y direction is the direction orthogonal to the X direction in the horizontal plane, and is the width direction (short side direction) of the substrate FS. The Z direction is a direction (upward direction) orthogonal to the X direction and the Y direction, and is parallel to the direction of gravity.
基板FS係使用例如樹脂膜或由不銹鋼等金屬或合金構成之箔(foil)等。作為樹脂膜之材質,亦可使用含有例如聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯基共聚物樹脂、聚氯化乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、及乙酸乙酯樹脂中至少一種以上者。又,基板FS之厚度或剛性(楊式係數)只要為在通過曝光裝置EX之搬送路時基板FS不會產生彎曲造成之摺痕或不可逆之皺痕之範圍即可。作為基板FS之母材,厚度25μm~200μm程度之PET(聚對苯二甲酸乙二酯)或PEN(聚萘二甲酸乙二酯)等之膜為較佳片狀基板之典型。For the substrate FS, for example, a resin film or a foil made of metal or alloy such as stainless steel is used. As the material of the resin film, for example, polyethylene resin, polypropylene resin, polyester resin, vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, At least one of polycarbonate resin, polystyrene resin, and ethyl acetate resin. In addition, the thickness or rigidity (Young's coefficient) of the substrate FS may be a range that does not cause creases or irreversible wrinkles caused by bending of the substrate FS when passing through the conveyance path of the exposure device EX. As the base material of the substrate FS, films such as PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) having a thickness of about 25 μm to 200 μm are typical of the preferred sheet substrates.
基板FS會有在程序裝置PR1、曝光裝置EX、及程序裝置PR2施加之各處理受熱之情形,因此較佳為選定熱膨脹係數顯著不大材質之基板FS。例如,可藉由將無機填劑混合在樹脂膜抑制熱膨脹係數。無機填劑亦可為例如氧化鈦、氧化鋅、氧化鋁、或氧化矽等。又,基板FS可為以浮式法等製造之厚度100μm程度之極薄玻璃單層體,亦可為在此極薄玻璃貼合有上述樹脂膜、箔等之積層體。The substrate FS may be heated by each process applied by the processing device PR1, the exposure device EX, and the processing device PR2, so it is preferable to select a substrate FS with a material whose thermal expansion coefficient is not significantly large. For example, the thermal expansion coefficient can be suppressed by mixing an inorganic filler with a resin film. The inorganic filler may also be, for example, titanium oxide, zinc oxide, aluminum oxide, or silicon oxide. In addition, the substrate FS may be an ultra-thin glass single layer body with a thickness of about 100 μm manufactured by a float method or the like, or a laminate body in which the above-mentioned resin film, foil, etc. are bonded to the ultra-thin glass.
然而,基板FS之可撓性(flexibility)係指即使對基板FS施加自重程度之力亦不會剪斷或破斷、能使該基板FS撓曲之性質。又,藉由自重程度之力彎折之性質亦包含在可撓性。又,基板FS之材質、大小、厚度,係依據成膜在基板FS上之層構造、溫度、濕度等環境等,可撓性之程度改變。不論如何,在基板FS正確地捲繞在設在本第1實施形態之元件製造系統10內之搬送路之各種搬送用捲筒、旋轉筒等搬送方向轉換用構件時,只要不會彎曲產生摺痕或破損(撕裂或產生裂痕)而可順暢地搬送基板FS,則可謂在可撓性之範圍。However, the flexibility of the substrate FS refers to the property that the substrate FS will not be sheared or broken even if the force of the self-weight is applied to the substrate FS, and the substrate FS can be flexed. In addition, the nature of bending by the force of self-weight also includes flexibility. In addition, the material, size, and thickness of the substrate FS vary depending on the degree of flexibility according to the layer structure, temperature, humidity, etc. of the film formed on the substrate FS. In any case, when the substrate FS is correctly wound on various conveyance reels, rotating drums, and other conveyance direction conversion members provided on the conveyance path provided in the
程序裝置PR1對在曝光裝置EX進行曝光處理之基板FS進行前置步驟之處理。程序裝置PR1將已進行前置步驟之處理之基板FS朝向曝光裝置EX搬送。藉由此前置步驟之處理,往曝光裝置EX搬送之基板FS成為在表面形成有感光性機能層(光感應層、感光層)之基板(感光基板)。The programming device PR1 performs a pre-step process on the substrate FS that is exposed to the exposure device EX. The programming device PR1 transports the substrate FS that has undergone the pre-processing to the exposure device EX. By this pre-process, the substrate FS transferred to the exposure device EX becomes a substrate (photosensitive substrate) in which a photosensitive functional layer (photosensitive layer, photosensitive layer) is formed on the surface.
此感光性機能層係在基板FS上塗布溶液並使其乾燥而成為層(膜)。感光性機能層之典型為光阻(液狀或乾膜狀),但作為不須顯影處理之材料,有接受紫外線照射之部分之親撥液性改質之感光性矽烷耦合劑(SAM)、或者在接受紫外線照射之部分出現鍍敷還原基之感光性還原劑等。作為感光性機能層,使用感光性矽烷耦合劑之情形,基板FS上之被紫外線曝光之圖案部分從撥液性改質成親液性。因此,在親液性之部分上選擇性塗布含有導電性油墨(含有銀或銅等導電性奈米粒子之油墨)或半導體材料之液體等,藉此可形成構成薄膜電晶體(TFT)等之電極、半導體、絕緣或連接用配線或作為電極之圖案層。作為感光性機能層,使用感光性還原劑之情形,在基板上之被紫外線曝光之圖案部分出現鍍敷還原基。因此,在曝光後,立刻將基板FS浸漬在含有鈀離子等之鍍敷液中一定時間,藉此形成(析出)鈀之圖案層。此種鍍敷處理為添加(additive)程序,但除此之外,以作為減去(subtractive)程序之蝕刻處理為前提之情形,往曝光裝置EX搬送之基板FS亦可為以PET或PEN為母材、在表面整面或選擇性蒸鍍鋁(Al)或銅(Cu)等金屬性薄膜、進一步在其上積層有光阻層者。This photosensitive functional layer is a layer (film) coated with a solution on the substrate FS and dried. The photosensitive functional layer is typically photoresist (liquid or dry film), but as a material that does not need to be developed, there is a liquid-modified photosensitive silane coupling agent (SAM) that is exposed to ultraviolet light. Or a photosensitive reducing agent such as a plating-reducing group appears on the part that receives ultraviolet radiation. When a photosensitive silane coupling agent is used as the photosensitive functional layer, the pattern portion on the substrate FS exposed to ultraviolet light is changed from liquid repellent to lyophilic. Therefore, liquids containing conductive inks (inks containing conductive nanoparticles such as silver or copper) or semiconductor materials are selectively coated on the lyophilic parts, whereby thin-film transistors (TFTs) etc. can be formed Electrodes, semiconductors, wiring for insulation or connection, or pattern layers as electrodes. When a photosensitive reducing agent is used as the photosensitive functional layer, a plating reducing group appears on the patterned portion exposed to ultraviolet rays on the substrate. Therefore, immediately after exposure, the substrate FS is immersed in a plating solution containing palladium ions or the like for a certain period of time, thereby forming (precipitating) a palladium pattern layer. This plating process is an additive process, but in addition, in the case where the etching process as a subtractive process is the premise, the substrate FS transferred to the exposure device EX may also be PET or PEN. A base material, a metal thin film such as aluminum (Al) or copper (Cu) that is selectively vapor-deposited on the entire surface, or a photoresist layer is further deposited thereon.
在本第1實施形態,曝光裝置EX係不使用光罩之直接描繪方式之曝光裝置,亦即所謂逐線掃描方式之曝光裝置。曝光裝置EX對從程序裝置PR1供應之基板FS之被照射面(感光面)照射對應顯示器用電子元件、電路或配線等用之既定圖案之光圖案。雖會在之後詳細說明,但曝光裝置EX一邊將基板FS往+X方向(副掃描方向)搬送、一邊使曝光用光束(雷射光、照射光)LB之點光SP在基板FS上(基板FS之被照射面上)往既定掃描方向(Y方向)一維掃描,並同時依據圖案資料(描繪資料、描繪資訊)高度地調變(ON/OFF)點光SP之強度。藉此,在基板FS之被照射面即表面(感光面)描繪曝光對應電子元件、電路或配線等之既定圖案之光圖案。亦即,以基板FS之副掃描與點光SP之主掃描使點光SP在基板FS之被照射面上相對地二維掃描,在基板FS描繪曝光既定圖案。又,基板FS沿著搬送方向(+X方向)被搬送,因此藉由曝光裝置EX被曝光圖案之曝光區域W沿著基板FS之長邊方向隔著既定間隔設有複數個(參照圖5)。由於在此曝光區域W形成電子元件,因此曝光區域W亦為電子元件形成區域。此外,電子元件係複數個圖案層(形成有圖案之層)重疊而構成,因此亦可藉由曝光裝置EX使對應各層之圖案曝光。In the first embodiment, the exposure device EX is an exposure device of a direct drawing method that does not use a reticle, that is, an exposure device of a so-called line scan method. The exposure device EX irradiates a light pattern corresponding to a predetermined pattern for display electronic components, circuits, wiring, or the like to the illuminated surface (photosensitive surface) of the substrate FS supplied from the programming device PR1. Although it will be described in detail later, the exposure device EX transports the substrate FS in the +X direction (sub-scanning direction) while placing the spot light SP of the exposure beam (laser light, irradiation light) LB on the substrate FS (substrate FS) The irradiated surface is scanned one-dimensionally in a predetermined scanning direction (Y direction), and at the same time, the intensity of the spot light SP is highly adjusted (ON/OFF) according to the pattern data (drawing data and drawing information). In this way, a light pattern that exposes a predetermined pattern corresponding to electronic components, circuits, wiring, or the like is drawn on the surface (photosensitive surface) that is the irradiated surface of the substrate FS. That is, the sub-scanning of the substrate FS and the main scanning of the spot light SP cause the spot light SP to relatively scan two-dimensionally on the illuminated surface of the substrate FS, and draw a predetermined exposure pattern on the substrate FS. In addition, since the substrate FS is transported in the transport direction (+X direction), a plurality of exposure areas W of the pattern exposed by the exposure device EX are provided at predetermined intervals along the longitudinal direction of the substrate FS (see FIG. 5) . Since the electronic component is formed in the exposure area W, the exposure area W is also an electronic component formation area. In addition, the electronic device is formed by overlapping a plurality of pattern layers (layers with patterns), so that the pattern corresponding to each layer can be exposed by the exposure device EX.
程序裝置PR2對在曝光裝置EX進行曝光處理後之基板FS進行後續步驟之處理(例如,鍍敷處理或顯影、蝕刻處理等)。藉由此後續步驟之處理,在基板FS上形成元件之圖案層。The programming device PR2 performs the subsequent step processing (for example, plating processing, development, etching processing, etc.) on the substrate FS after the exposure processing by the exposure device EX. Through the processing in the subsequent steps, the pattern layer of the device is formed on the substrate FS.
如上述,電子元件係複數個圖案層重疊而構成,因此經由元件製造系統10之至少各處理產生一個圖案層。因此,為了產生電子元件,必須經過至少二次圖1所示之元件製造系統10之各處理。因此,將捲繞有基板FS之回收捲筒作為供應捲筒安裝在另一元件製造系統10,藉此能使圖案層積層。反覆上述動作,形成電子元件。因此,處理後之基板FS成為複數個電子元件(曝光區域W)隔著既定間隔沿著基板FS之長邊方向相連之狀態。亦即,基板FS成為多面用基板。As described above, the electronic component is formed by overlapping a plurality of pattern layers. Therefore, at least one process layer is generated by at least each process of the
回收電子元件在相連狀態下形成之基板FS之回收捲筒亦可安裝在未圖示之切割裝置。安裝有回收捲筒之切割裝置,將處理後之基板FS就電子元件(電子元件形成區域W)分割(切割),藉此成為複數個電子元件。基板FS之尺寸為例如寬方向(成為短邊之方向)之尺寸10cm~2m程度、長度方向(成為長邊之方向)之尺寸10m以上。此外,基板FS之尺寸並不限於上述尺寸。The recycling reel of the substrate FS formed by recycling electronic components in a connected state can also be installed in a cutting device (not shown). A cutting device equipped with a recovery reel divides the processed substrate FS into electronic components (electronic component forming regions W) (cut), thereby forming a plurality of electronic components. The size of the substrate FS is, for example, about 10 cm to 2 m in the width direction (the direction of the short side) and 10 m or more in the length direction (the direction of the long side). In addition, the size of the substrate FS is not limited to the above-mentioned size.
接著,詳細說明曝光裝置EX。曝光裝置EX收納在調溫腔室ECV內。此調溫腔室ECV,藉由內部保持既定溫度,控制在內部搬送之基板FS之溫度造成之形狀變化。調溫腔室ECV係透過被動或主動之防振單元SU1, SU2配置在製造工廠之設置面E。防振單元SU1, SU2降低來自設置面E之振動。此設置面E可為工廠之地面本身,亦可為為了露出水平面而設置在地面上之設置台(台座)上之面。曝光裝置EX具備基板搬送機構12、光源裝置(脈衝光源裝置、雷射光源裝置)14、描繪頭16、控制裝置18。Next, the exposure device EX will be described in detail. The exposure device EX is housed in the temperature adjustment chamber ECV. The temperature control chamber ECV maintains a predetermined temperature inside and controls the shape change caused by the temperature of the substrate FS transported inside. The temperature-adjusting chamber ECV is arranged on the installation surface E of the manufacturing plant through passive or active anti-vibration units SU1 and SU2. The anti-vibration units SU1 and SU2 reduce the vibration from the installation surface E. The installation surface E may be the ground of the factory itself, or the surface on the installation platform (pedestal) installed on the ground to expose the horizontal plane. The exposure device EX includes a
基板搬送機構12在將從程序裝置PR1搬送之基板FS在曝光裝置EX內以既定速度搬送後,以既定速度往程序裝置PR2送出。藉由此基板搬送機構12,規定在曝光裝置EX內搬送之基板FS之搬送路。基板搬送機構12,從基板FS之搬送方向之上游側(-X方向側)依序具有邊緣位置控制器EPC、驅動輥R1、張力調整輥RT1、旋轉筒(圓筒)DR、張力調整輥RT2、驅動輥R2、及驅動輥R3。The
邊緣位置控制器EPC調整從程序裝置PR1搬送之基板FS之寬方向(Y方向、基板FS之短邊方向)之位置。亦即,邊緣位置控制器EPC,以在施加有既定張力之狀態下搬送之基板FS之寬方向之端部(邊緣)之位置相對於目標位置位在±十數μm~數十μm程度之範圍(容許範圍)之方式,使基板FS往寬方向移動,調整基板FS之寬方向之位置。邊緣位置控制器EPC具有掛架有基板FS之輥、及檢測基板FS之寬方向之端部(邊緣)之位置之未圖示之邊緣感測器(端部檢測部),根據邊緣感測器檢測出之檢測訊號,使邊緣位置控制器EPC之上述輥往Y方向移動,調整基板FS之寬方向之位置。驅動輥R1一邊保持從邊緣位置控制器EPC搬送之基板FS之表面背面兩面一邊旋轉,將基板FS朝向旋轉筒DR搬送。此外,邊緣位置控制器EPC,亦可以捲繞在旋轉筒DR之基板FS之長邊方向相對於旋轉筒DR之中心軸(旋轉軸)AXo恆正交之方式,適當地調整基板FS之寬方向之位置,且以修正基板FS之行進方向之傾斜誤差之方式,適當地調整邊緣位置控制器EPC之前述輥之旋轉軸與Y軸之平行度。The edge position controller EPC adjusts the position of the substrate FS transferred from the programming device PR1 in the width direction (Y direction, short side direction of the substrate FS). That is, the edge position controller EPC is to position the end (edge) of the width direction of the substrate FS transferred with a predetermined tension applied to the target position within the range of ± tens μm to tens μm (Allowable range), the substrate FS is moved in the width direction, and the position of the substrate FS in the width direction is adjusted. The edge position controller EPC has a roller on which the substrate FS is mounted, and an unillustrated edge sensor (end detection portion) that detects the position of the end (edge) of the substrate FS in the width direction, according to the edge sensor The detected detection signal moves the roller of the edge position controller EPC in the Y direction to adjust the position of the substrate FS in the width direction. The drive roller R1 rotates while holding both the front and back surfaces of the substrate FS transported from the edge position controller EPC, and transports the substrate FS toward the rotating drum DR. In addition, the edge position controller EPC can also be appropriately adjusted to the width direction of the substrate FS by winding the longitudinal direction of the substrate FS of the rotary drum DR with the orthogonal direction with respect to the central axis (rotation axis) AXo of the rotary drum DR. Position, and the parallelism of the rotation axis of the aforementioned roller of the edge position controller EPC and the Y axis is appropriately adjusted in a manner of correcting the tilt error of the traveling direction of the substrate FS.
旋轉筒DR具有往Y方向延伸且往與重力作用方向交叉之方向延伸之中心軸AXo、與距中心軸AXo一定半徑之圓筒狀之外周面,一邊仿效外周面(圓周面)將基板FS之一部分支承在長邊方向、一邊以中心軸AXo為中心旋轉而將基板FS往+X方向搬送。旋轉筒DR以其圓周面支承供來自描繪頭16之光束LB(點光SP)投射之基板FS上之曝光區域(部分)。在旋轉筒DR之Y方向兩側設有以旋轉筒DR繞中心軸AXo旋轉之方式被環狀軸承支承之軸Sft。此軸Sft藉由被賦予來自控制裝置18所控制之未圖示之旋轉驅動源(例如,由馬達或減速機構等構成)之旋轉力矩,繞中心軸AXo旋轉。此外,方便上,將包含中心軸AXo且與YZ平面平行之平面稱為中心面Poc。The rotating drum DR has a central axis AXo extending in the Y direction and extending in a direction crossing the direction of gravity, and a cylindrical outer peripheral surface having a certain radius from the central axis AXo, while imitating the outer peripheral surface (circumferential surface) of the substrate FS A part is supported in the long-side direction while rotating around the central axis AXo to transport the substrate FS in the +X direction. The rotating drum DR supports the exposure area (portion) on the substrate FS on which the light beam LB (spot light SP) from the drawing
驅動輥R2, R3沿著基板FS之搬送方向(+X方向)隔著既定間隔配置,對曝光後之基板FS賦予既定鬆弛狀態。驅動輥R2, R3,與驅動輥R1同樣地,一邊保持基板FS之表面背面兩面一邊旋轉,將基板FS朝向程序裝置PR2搬送。驅動輥R2, R3相對於旋轉筒DR設在搬送方向之下游側(+X方向側),此驅動輥R2相對於驅動輥R3設在搬送方向之上游側(-X方向側)。張力調整輥RT1, RT2往-Z方向施力,對捲繞於旋轉筒DR而被支承之基板FS往長邊方向賦予既定張力。藉此,使賦予在旋轉筒DR之基板FS之長邊方向之張力在既定範圍內穩定化。此外,控制裝置18,藉由控制未圖示之旋轉驅動源(例如,由馬達或減速機構等構成),使驅動輥R1~R3旋轉。The driving rollers R2 and R3 are arranged at predetermined intervals along the conveyance direction (+X direction) of the substrate FS, and a predetermined slack state is given to the substrate FS after exposure. The drive rollers R2 and R3 rotate in the same manner as the drive roller R1 while holding both the front and back surfaces of the substrate FS, and transport the substrate FS toward the programming device PR2. The driving rollers R2 and R3 are provided on the downstream side (+X direction side) with respect to the rotating drum DR, and the driving roller R2 is provided on the upstream side (-X direction side) with respect to the driving roller R3. The tension adjusting rollers RT1 and RT2 apply a force in the -Z direction to apply a predetermined tension to the substrate FS wound around the rotating drum DR and supported in the longitudinal direction. As a result, the tension applied to the longitudinal direction of the substrate FS of the rotating drum DR is stabilized within a predetermined range. In addition, the
光源裝置14具有光源(脈衝光源),射出脈衝狀之光束(脈衝光、雷射光)LB。此光束LB為在370nm以下之波長帶具有峰值波長之紫外線光,設光束LB之振盪頻率(發光頻率)為Fs。光源裝置14射出之光束LB射入描繪頭16。光源裝置14,依據控制裝置18之控制,以發光頻率Fs使光束LB發光並射出。此光源裝置14之構成在之後詳細說明,但係以產生紅外波長域之脈衝光之半導體雷射元件、光纖增幅器、將已增幅之紅外波長域之脈衝光轉換成紫外波長域之脈衝光之波長轉換光學元件(諧波產生元件)等構成,亦可使用可獲得振盪頻率Fs為數百MHz且一個脈衝光之發光時間為微微秒程度之高亮度紫外線之脈衝光之光纖放大器雷射光源。The
描繪頭16具備光束LB分別射入之複數個掃描單元Un(U1~U6)。描繪頭16在基板搬送機構12之旋轉筒DR之圓周面所支承之基板FS之一部分,藉由複數個掃描單元(描繪單元)U1~U6描繪既定圖案。描繪頭16為排列有同一構成之複數個掃描單元U1~U6之所謂多光束型描繪頭16。描繪頭16對基板FS反覆進行電子元件用之圖案曝光,因此被曝光圖案之曝光區域(電子元件形成區域)W係沿著基板FS之長邊方向隔著既定間隔設有複數個(參照圖5)。控制裝置18控制曝光裝置EX之各部,使各部執行處理。此控制裝置18包含電腦與儲存有程式之記憶媒體,藉由該電腦執行儲存在記憶媒體之程式,具有本第1實施形態之控制裝置18之功能。The drawing
圖2係顯示支承描繪頭16之複數個掃描單元(描繪單元)Un及旋轉筒DR之支承架(裝置柱)30之圖。支承架30具有本體架32、三點支承部34、及描繪頭支承部36。支承架30收納在調溫腔室ECV內。本體架32透過環狀軸承將旋轉筒DR、張力調整輥RT1(未圖示), RT2支承成可旋轉。三點支承部34係設在本體架32之上端,以三點支承設在旋轉筒DR上方之描繪頭支承部36。FIG. 2 is a view showing a support frame (device column) 30 that supports a plurality of scanning units (drawing units) Un of the drawing
描繪頭支承部36支承描繪頭16之掃描單元Un(U1~U6) 描繪頭支承部36將掃描單元U1, U3, U5相對於旋轉筒DR之中心軸AXo在搬送方向之下游側(+X側)且沿著基板FS之寬方向並列地支承(參照圖1)。又,描繪頭支承部36將掃描單元U2, U4, U6相對於中心軸AXo在搬送方向之上游側(-X側)且沿著基板FS之寬方向(Y方向)並列地支承(參照圖1)。此外,此處,一個掃描單元Un之Y方向之描繪寬(點光SP之掃描範圍、描繪線SLn),作為一例若為20~50mm程度,則藉由將奇數號之三個掃描單元U1, U3, U5與偶數號之三個掃描單元U2, U4, U6之合計六個掃描單元Un配置在Y方向,使可描繪之Y方向之寬擴大至120mm~300mm程度。The drawing
圖3係顯示描繪頭16之構成之圖。在本第1實施形態,曝光裝置EX具備二個光源裝置14(14a, 14b)。描繪頭16具有複數個掃描單元U1~U6、將來自光源裝置14a之光束LB導至複數個掃描單元U1, U3, U5之光導入光學系(光束切換構件)40a、將來自光源裝置14b之光束LB導至複數個掃描單元U2, U4, U6之光導入光學系(光束切換構件)40b。FIG. 3 shows a diagram depicting the structure of the
首先,使用圖4說明光導入光學系(光束切換構件)40a。此外,光導入光學系40a, 40b具有同一構成,因此此處說明光導入光學系40a,省略光導入光學系40b之說明。First, the light introduction optical system (beam switching member) 40a will be described using FIG. 4. In addition, since the light introduction
光導入光學系40a,從光源裝置14(14a)側起,具有聚光透鏡42、準直鏡44、反射鏡46、聚光透鏡48、選擇用光學元件50、反射鏡52、準直鏡54、聚光透鏡56、選擇用光學元件58、反射鏡60、準直鏡62、聚光透鏡64、選擇用光學元件66、反射鏡68、及吸收體70。The light introduction
聚光透鏡42及準直鏡44使從光源裝置14a射出之光束LB放大。詳細而言,首先,聚光透鏡42使光束LB收斂在聚光透鏡42之後側之焦點位置,準直鏡44使藉由聚光透鏡42收斂後散射之光束LB成為既定光束徑(例如,數mm)之平行光。The
反射鏡46使藉由準直鏡44成為平行光之光束LB反射後照射至選擇用光學元件50。聚光透鏡48使射入選擇用光學元件50之光束LB聚光(收斂)成在選擇用光學元件50內成為光束腰寬。選擇用光學元件50對光束LB具有透射性,例如,使用聲光調變元件(AOM:Acousto-Optic Modulator)。AOM,若施加超音波訊號(高頻訊號),則將使射入之光束LB(0次光)以對應高頻頻率之繞射角繞射之1次繞射光作為射出光束(光束LBn)產生。此外,在本第1實施形態,將從複數個選擇用光學元件50, 58, 66之各個作為1次繞射光射出後射入對應之掃描單元U1, U3, U5之光束LBn以LB1, LB3, LB5表示,各選擇用光學元件50, 58, 66係作為具有使來自光源裝置14(14a)之光束LB之光路偏向之功能者。各選擇用光學元件50, 58, 66之構成、功能、作用等亦可使用彼此相同者。選擇用光學元件50, 58, 66依據來自控制裝置18之驅動訊號(高頻訊號)之ON/OFF,將使射入之光束LB繞射之繞射光之產生ON/OFF。The reflecting
詳細說明,選擇用光學元件50,在來自控制裝置18之驅動訊號(高頻訊號)為OFF時,將射入之光束LB照射至次段之選擇用光學元件58。另一方面,在來自控制裝置18之驅動訊號(高頻訊號)為ON時,選擇用光學元件50使射入之光束LB繞射,將其之1次繞射光即光束LB1照射至反射鏡52。反射鏡52使射入之光束LB1反射,照射至掃描單元U1之準直鏡100。亦即,藉由控制裝置18將選擇用光學元件50切換(驅動)成ON/OFF,選擇用光學元件50切換是否使光束LB1射入掃描單元U1。In detail, the selection
在選擇用光學元件50與選擇用光學元件58之間依序設有使照射至選擇用光學元件58之光束LB返回平行光之準直鏡54、及使藉由準直鏡54成為平行光之光束LB再次聚光(收斂)成在選擇用光學元件58內成為光束腰寬之聚光透鏡56。Between the selection
選擇用光學元件58,與選擇用光學元件50同樣地,對光束LB具有透射性,例如,使用聲光調變元件(AOM)。選擇用光學元件58,在從控制裝置18傳送而來之驅動訊號(高頻訊號)為OFF時,使射入之光束LB直接透射過而照射至選擇用光學元件66,在從控制裝置18傳送而來之驅動訊號(高頻訊號)為ON時,使射入之光束LB繞射,將其之1次繞射光即光束LB3照射至反射鏡60。反射鏡60使射入之光束LB3反射,照射至掃描單元U3之準直鏡100。亦即,藉由控制裝置18將選擇用光學元件58切換成ON/OFF,選擇用光學元件58切換是否使光束LB3射入掃描單元U3。The selection
在選擇用光學元件58與選擇用光學元件66之間依序設有使照射至選擇用光學元件66之光束LB返回平行光之準直鏡62、及使藉由準直鏡62成為平行光之光束LB再次聚光(收斂)成在選擇用光學元件66內成為光束腰寬之聚光透鏡64。Between the selection
選擇用光學元件66,與選擇用光學元件50同樣地,對光束LB具有透射性,例如,使用聲光調變元件(AOM)。選擇用光學元件66,在來自控制裝置18之驅動訊號(高頻訊號)為OFF狀態時,使射入之光束LB朝向吸收體70照射,在來自控制裝置18之驅動訊號(高頻訊號)為ON狀態時,使射入之光束LB繞射,將其之1次繞射光即光束LB5朝向反射鏡68照射。反射鏡68使射入之光束LB5反射,照射至掃描單元U5之準直鏡100。亦即,藉由控制裝置18將選擇用光學元件66切換成ON/OFF,選擇用光學元件66切換是否使光束LB5射入掃描單元U5。吸收體70為用以抑制光束LB往外部漏出之吸收光束LB之光吸收體。The
針對光導入光學系40b進行簡單說明,光導入光學系40b之選擇用光學元件50, 58, 66切換是否使光束LB射入掃描單元U2, U4, U6。此情形,光導入光學系40b之反射鏡52, 60, 68使從選擇用光學元件50, 58, 66射出之光束LB2, LB4, LB6反射後照射至掃描單元U2, U4, U6之準直鏡100。The light introduction
此外,實際之聲光調變元件(AOM),1次繞射光之產生效率為0次光之80%程度,因此被選擇用光學元件50, 58, 66之各個偏向之光束LB1(LB2), LB3(LB4), LB5(LB6)之強度較原本之光束LB之強度低。又,在選擇用光學元件50, 58, 66之任一者為ON狀態時,不繞射而直進之0次光殘留20%程度,但最終地被吸收體70吸收。In addition, for the actual acousto-optic modulation element (AOM), the generation efficiency of the first-order diffracted light is about 80% of that of the zero-order light. Therefore, the beams LB1 (LB2) of each deflected
接著,說明圖3所示之複數個掃描單元Un(U1~U6)。掃描單元Un一邊將來自光源裝置14(14a, 14b)之光束LBn以收斂成點光SP之方式投射至基板FS之被照射面上、一邊藉由旋轉之多面鏡PM使該點光SP在基板FS之被照射面上沿著既定直線之描繪線(掃描線)SLn進行一維掃描。此外,以SL1表示掃描單元U1之描繪線SLn,同樣地,以SL2~SL6表示掃描單元U2~U6之描繪線SLn。Next, the plurality of scanning units Un (U1 to U6) shown in FIG. 3 will be described. The scanning unit Un projects the light beam LBn from the light source device 14 (14a, 14b) onto the irradiated surface of the substrate FS by converging into the spot light SP, and makes the spot light SP on the substrate by the rotating polygon mirror PM The irradiated surface of the FS is scanned one-dimensionally along the drawing line (scanning line) SLn of a predetermined straight line. In addition, the drawing line SLn of the scanning unit U1 is represented by SL1, and similarly, the drawing line SLn of the scanning units U2 to U6 is represented by SL2 to SL6.
圖5係顯示藉由各掃描單元Un(U1~U6)被掃描點光SP之描繪線SLn(SL1~SL6)之圖。如圖5所示,以複數個掃描單元Un(U1~U6)全部覆蓋曝光區域W之寬方向全部之方式,各掃描單元Un(U1~U6)分擔掃描區域。藉此,各掃描單元Un(U1~U6)可就在基板FS之寬方向分割之複數個區域描繪圖案。各描繪線SLn(SL1~SL6)之長度原則上相同。亦即,沿著描繪線SL1~SL6之各個掃描之光束LBn之點光SP之掃描距離原則上相同。此外,欲加長曝光區域W之寬之情形,能以增長描繪線SLn本身之長度或者增加設置在Y方向之掃描單元Un之數之方式來對應。FIG. 5 is a diagram showing the drawing line SLn (SL1 to SL6) of the spot light SP scanned by each scanning unit Un (U1 to U6). As shown in FIG. 5, each scanning unit Un (U1 to U6) shares the scanning area in such a manner that a plurality of scanning units Un (U1 to U6) all cover the entire width direction of the exposure area W. With this, each scanning unit Un (U1 to U6) can draw a pattern on a plurality of regions divided in the width direction of the substrate FS. The length of each drawing line SLn (SL1 to SL6) is in principle the same. That is, the scanning distance of the spot light SP of the light beam LBn of each scan along the drawing lines SL1 to SL6 is basically the same. In addition, to increase the width of the exposure area W, the length of the drawing line SLn itself can be increased or the number of scanning units Un provided in the Y direction can be increased.
此外,實際之各描繪線SLn(SL1~SL6)係設定成較點光SP可在被照射面上實際掃描之最大長度短一些。例如,若在主掃描方向(Y方向)之描繪倍率為初始值(無倍率修正)之情形可描繪圖案之描繪線SLn之最大長度為30mm,則點光SP在被照射面上之最大掃描長度在描繪線SLn之掃描開始點側與掃描結束點側之各個具有0.5mm程度之空間,設定成31mm程度。藉由以上述方式設定,在點光SP之最大掃描長度31mm之範圍內,可在主掃描方向微調30mm之描繪線SLn之位置或微調描繪倍率。點光SP之最大掃描長度並不限於31mm,主要由設在掃描單元Un內之多面鏡(旋轉多面鏡)PM後之fθ透鏡FT(參照圖3)之口徑決定,亦可為31mm以上。In addition, the actual drawing lines SLn (SL1 to SL6) are set to be shorter than the maximum length that the spot light SP can actually scan on the illuminated surface. For example, if the drawing magnification in the main scanning direction (Y direction) is the initial value (without magnification correction), the maximum length of the drawing line SLn that can draw the pattern is 30 mm, the maximum scanning length of the spot light SP on the illuminated surface Each of the scanning start point side and the scanning end point side of the drawing line SLn has a space of approximately 0.5 mm, and is set to approximately 31 mm. By setting in the above manner, within the range of the maximum scanning length of the spot light SP of 31 mm, the position of the drawing line SLn of 30 mm or the drawing magnification can be finely adjusted in the main scanning direction. The maximum scanning length of the spot light SP is not limited to 31 mm. It is mainly determined by the aperture of the fθ lens FT (refer to FIG. 3) after the polygon mirror (rotating polygon mirror) PM provided in the scanning unit Un, and may be 31 mm or more.
複數條描繪線(掃描線)SL1~SL6隔著中心面Poc二列地配置在旋轉筒DR之周方向。描繪線SL1, SL3, SL5相對於中心面Poc位於搬送方向之下游側(+X方向側)之基板FS上。描繪線SL2, SL4, SL6相對於中心面Poc位於搬送方向之上游側(-X方向側)之基板FS上。各描繪線SLn(SL1~SL6)沿著基板FS之寬方向、亦即旋轉筒DR之中心軸AXo大致平行,較基板FS之寬方向之長度短。A plurality of drawing lines (scanning lines) SL1 to SL6 are arranged in two rows across the center plane Poc in the circumferential direction of the rotating drum DR. The drawing lines SL1, SL3, SL5 are located on the substrate FS on the downstream side (+X direction side) of the conveying direction with respect to the central plane Poc. The drawing lines SL2, SL4, SL6 are located on the substrate FS on the upstream side (-X direction side) in the conveying direction with respect to the center plane Poc. Each drawing line SLn (SL1 to SL6) is substantially parallel along the width direction of the substrate FS, that is, the central axis AXo of the rotating drum DR, and is shorter than the width direction length of the substrate FS.
描繪線SL1, SL3, SL5沿著基板FS之寬方向(掃描方向、Y方向)隔著既定間隔配置,描繪線SL2, SL4, SL6亦同樣地沿著基板FS之寬方向(掃描方向、Y方向)隔著既定間隔配置。此時,描繪線SL2,在基板FS之寬方向,配置在描繪線SL1與描繪線SL3之間。同樣地,描繪線SL3,在基板FS之寬方向,配置在描繪線SL2與描繪線SL4之間。描繪線SL4,在基板FS之寬方向,配置在描繪線SL3與描繪線SL5之間。描繪線SL5,在基板FS之寬方向,配置在描繪線SL4與描繪線SL6之間。亦即,描繪線SL1~SL6配置成覆蓋在基板FS上描繪之曝光區域W之寬方向全部。The drawing lines SL1, SL3, SL5 are arranged at predetermined intervals along the width direction of the substrate FS (scanning direction, Y direction), and the drawing lines SL2, SL4, SL6 are also along the width direction of the substrate FS (scanning direction, Y direction) ) Configured at regular intervals. At this time, the drawing line SL2 is arranged between the drawing line SL1 and the drawing line SL3 in the width direction of the substrate FS. Similarly, the drawing line SL3 is arranged between the drawing line SL2 and the drawing line SL4 in the width direction of the substrate FS. The drawing line SL4 is arranged between the drawing line SL3 and the drawing line SL5 in the width direction of the substrate FS. The drawing line SL5 is arranged between the drawing line SL4 and the drawing line SL6 in the width direction of the substrate FS. That is, the drawing lines SL1 to SL6 are arranged so as to cover the entire width direction of the exposure area W drawn on the substrate FS.
沿著奇數號描繪線SL1, SL3, SL5之各個掃描之光束LBn(LB1, LB3, LB5)之點光SP之掃描方向為一維方向,為相同方向。沿著偶數號描繪線SL2, SL4, SL6之各個掃描之光束LBn(LB2, LB4, LB6)之點光SP之掃描方向為一維方向,為相同方向。沿著此描繪線SL1, SL3, SL5掃描之光束LBn(點光SP)之掃描方向與沿著描繪線SL2, SL4, SL6掃描之光束LBn(點光SP)之掃描方向彼此為相反方向。詳細而言,沿著此描繪線SL2, SL4, SL6掃描之光束LBn(點光SP)之掃描方向為+Y方向,沿著描繪線SL1, SL3, SL5掃描之光束LBn(點光SP)之掃描方向為-Y方向。此係作為掃描單元U1~U6之多面鏡PM使用往相同方向旋轉之多面鏡PM所致。藉此,描繪線SL1, SL3, SL5之描繪開始位置(描繪開始點(掃描開始點)之位置)與描繪線SL2, SL4, SL6之描繪開始位置在Y方向相鄰(或者一部分重複)。又,描繪線SL3, SL5之描繪結束位置(描繪結束點(掃描結束點)之位置)與描繪線SL2, SL4之描繪結束位置在Y方向相鄰(或者一部分重複)。以在Y方向相鄰之描繪線SLn之端部彼此一部分重複之方式配置各描繪線SLn之情形,例如,只要相對於各描繪線SLn之長度,包含描繪開始位置或描繪結束位置在Y方向以數%以下之範圍重複即可。The scanning direction of the spot light SP of the light beams LBn (LB1, LB3, LB5) of each scan along the odd-numbered drawing lines SL1, SL3, SL5 is a one-dimensional direction and the same direction. The scanning direction of the spot light SP of the light beams LBn (LB2, LB4, LB6) of each scan along the even-numbered drawing lines SL2, SL4, SL6 is a one-dimensional direction and the same direction. The scanning direction of the light beam LBn (spot light SP) scanned along the drawing lines SL1, SL3, SL5 and the scanning direction of the light beam LBn (spot light SP) scanning along the drawing lines SL2, SL4, SL6 are opposite directions. In detail, the scanning direction of the light beam LBn (spot light SP) scanned along the drawing lines SL2, SL4, SL6 is the +Y direction, and the light beam LBn (spot light SP) scanning along the drawing lines SL1, SL3, SL5 The scanning direction is the -Y direction. This is due to the polygon mirror PM rotating in the same direction as the polygon mirror PM of the scanning units U1 to U6. As a result, the drawing start position of the drawing lines SL1, SL3, SL5 (the position of the drawing start point (scanning start point)) and the drawing start position of the drawing lines SL2, SL4, SL6 are adjacent (or partially repeated) in the Y direction. In addition, the drawing end positions of the drawing lines SL3 and SL5 (the positions of drawing end points (scanning end points)) are adjacent to the drawing end positions of the drawing lines SL2 and SL4 in the Y direction (or part of them are repeated). When each drawing line SLn is arranged so that the ends of drawing lines SLn adjacent in the Y direction partially overlap each other, for example, as long as the length of each drawing line SLn includes the drawing start position or drawing end position in the Y direction, Repeat within a few percent.
此外,描繪線SLn之副掃描方向之寬為對應點光SP之尺寸(直徑)ø之粗度。例如,點光SP之尺寸ø為3μm之情形,描繪線SLn之副掃描方向之寬亦為3μm。點光SP亦可以重疊既定長度(例如,點光SP之尺寸ø之一半)之方式沿著描繪線SLn投射。又,使在Y方向相鄰之描繪線SLn(例如,描繪線SL1與描繪線SL2)彼此相鄰之情形(接續之情形),同樣地只要重疊既定長度(例如,點光SP之尺寸ø之一半)即可。In addition, the width of the drawing line SLn in the sub-scanning direction corresponds to the thickness (diameter) of the spot light SP. For example, when the size ø of the spot light SP is 3 μm, the width of the drawing line SLn in the sub-scanning direction is also 3 μm. The spot light SP may also be projected along the drawing line SLn in such a manner as to overlap a predetermined length (for example, the size of the spot light SP ½). In addition, when drawing lines SLn (for example, drawing line SL1 and drawing line SL2) adjacent to each other in the Y direction are adjacent to each other (continuous case), similarly, as long as a predetermined length (for example, the size of spot light SP Half).
本第1實施形態之情形,由於來自光源裝置14之光束LB為脈衝光,因此在主掃描期間投射在描繪線SLn上之點光SP對應光束LB之振盪頻率而呈離散。因此,必須使光束LB之一個脈衝光所投射之點光SP與下一個脈衝光所投射之點光SP在主掃描方向重複。其重複量,雖依據點光SP之尺寸ø、點光SP之掃描速度Vs、光束LB之振盪頻率Fs設定,但在點光SP之強度分布近似高斯分布之情形,只要相對於點光SP之峰值強度之1/e
2(或1/2)所決定之實效之徑尺寸ø重疊ø/2程度即可。是以,即使在副掃描方向(與描繪線SLn正交之方向),較佳亦為,設定成在沿著描繪線SLn之點光SP之一次掃描與下一次掃描之間,基板FS僅移動點光SP之實效之尺寸ø之大致1/2以下之距離。又,對基板FS上之感光性機能層之曝光量之設定,雖能以光束LB(脈衝光)之峰值調整,但在無法提升光束LB之強度之狀況下欲增加曝光量之情形,只要藉由點光SP之主掃描方向之掃描速度Vs之降低、光束LB之振盪頻率Fs之增加、或者基板FS之副掃描方向之搬送速度之降低等之任一者,使點光SP在主掃描方向或副掃描方向之重疊量增加至實效之尺寸ø之1/2以上即可。
In the case of the first embodiment, since the light beam LB from the
接著,說明圖3所示之掃描單元Un之構成。此外,各掃描單元U1~U6具有相同構成,因此此處僅針對掃描單元U1進行說明。掃描單元U1具有圖4所示之反射鏡52之後之準直鏡100、反射鏡102、聚光透鏡104、描繪用光學元件106、準直鏡108、反射鏡110、圓柱狀透鏡CYa、反射鏡114、多面鏡(光掃描構件、偏向構件)PM、fθ透鏡FT、圓柱狀透鏡CYb、及反射鏡122。準直鏡100, 108、反射鏡102, 110, 114, 122、聚光透鏡104、圓柱狀透鏡CYa, CYb、及fθ透鏡FT構成光學透鏡系。Next, the configuration of the scanning unit Un shown in FIG. 3 will be described. In addition, since the scanning units U1 to U6 have the same configuration, only the scanning unit U1 will be described here. The scanning unit U1 includes a
反射鏡102,在圖3中將從準直鏡100射入之光束LB1往-Z方向反射,射入作為描繪用光調變器之描繪用光學元件106。聚光透鏡104使射入描繪用光學元件106之光束LB1(平行光束)聚光(收斂)成在描繪用光學元件106內成為光束腰寬。描繪用光學元件106對光束LB1具有透射性,例如,使用聲光調變元件(AOM)。描繪用光學元件106,在來自控制裝置18之驅動訊號(高頻訊號)為OFF狀態時,使射入之光束LB1照射至未圖示之遮蔽板或者吸收體,在來自控制裝置18之驅動訊號(高頻訊號)為ON狀態時,使射入之光束LB1繞射,將其1次繞射光(描繪光束、亦即依據圖案資料進行強度調變後之光束LB1)照射至反射鏡110。上述遮蔽板及上述吸收體用以抑制光束LB1往外部漏出。The reflecting
在反射鏡110與描繪用光學元件106之間設有使射入反射鏡110之光束LB1成為平行光之準直鏡108。反射鏡110使射入之光束LB1朝向反射鏡114往-X方向反射,反射鏡114使射入之光束LB1朝向多面鏡PM反射。多面鏡(旋轉多面鏡)116使射入之光束LB1朝向具有與X軸平行之光軸之fθ透鏡往-X方向側反射。多面鏡PM,為了使光束LB1之點光SP在基板FS之被照射面上掃描,使射入之光束LB1在與XY平面平行之面內偏向(反射)。具體而言,多面鏡PM具有往Z方向延伸之旋轉軸AXp、及繞旋轉軸AXp形成之複數個反射面RP(本第1實施形態中為八個反射面RP)。以旋轉軸AXp為中心使該多面鏡PM往既定旋轉方向旋轉,藉此能使照射至反射面RP之脈衝狀之光束LB1之反射角連續地變化。藉此,藉由一個反射面RP使光束LB1之反射方向偏向,能使照射至基板FS之被照射面上之光束LB1之點光SP在掃描方向(基板FS之寬方向、Y方向)掃描。亦即,多面鏡PM使射入之光束LB1偏向,沿著圖5所示之描繪線(掃描線)SL1使點光SP掃描。此外,多面鏡PM係藉由未圖示之旋轉驅動源(例如,由馬達或減速機構等構成)以一定速度旋轉。此旋轉驅動源係藉由控制裝置18控制。A
由於可藉由多面鏡PM之一個反射面RP使光束LB1之點光SP沿著描繪線SL1掃描,因此以多面鏡PM之一次旋轉在基板FS之被照射面上被掃描點光SP之描繪線SL1之數最大成為與反射面RP之數相同之八條。如上述,描繪線SL1之實效長度(例如,30mm)係設定成可藉由該多面鏡PM掃描點光SP之最大掃描長度(例如,31mm)以下之長度,在初始設定(設計上),在最大掃描長度之中央設定有描繪線SL1之中心點。Since the spot light SP of the light beam LB1 can be scanned along the drawing line SL1 by a reflecting surface RP of the polygon mirror PM, the drawing line of the spot light SP is scanned on the illuminated surface of the substrate FS with one rotation of the polygon mirror PM The maximum number of SL1 becomes eight equal to the number of reflecting surfaces RP. As described above, the effective length of the drawing line SL1 (for example, 30 mm) is set to a length that can be scanned by the polygon mirror PM to the maximum scanning length of the spot light SP (for example, 31 mm). At the initial setting (design), in The center point of the drawing line SL1 is set in the center of the maximum scan length.
此外,作為一例,設描繪線SL1之實效長度為30mm,一邊使實效尺寸ø為3μm之點光SP以1.5μm逐一重疊、一邊使點光SP沿著描繪線SL1照射至基板FS之被照射面上時,以一次掃描照射之點光SP之數(來自光源裝置14之光束LB之脈衝數)成為20000(30mm/1.5μm)。又,若設沿著描繪線SL1之點光SP之掃描時間為200μsec,則必須在此期間照射20000次脈衝狀之點光SP,因此光源裝置14之發光頻率Fs成為Fs≧20000次/200μsec=100MHz。In addition, as an example, the effective length of the drawing line SL1 is set to 30 mm, and while the spot light SP having an effective size ø of 3 μm is superimposed one by one at 1.5 μm, the spot light SP is irradiated to the irradiated surface of the substrate FS along the drawing line SL1 At the time of up, the number of spot light SP irradiated by one scan (the number of pulses of the light beam LB from the light source device 14) becomes 20000 (30mm/1.5μm). In addition, if the scanning time of the spot light SP along the drawing line SL1 is 200 μsec, it is necessary to irradiate the pulsed spot light SP 20,000 times during this period, so the light emitting frequency Fs of the
返回掃描單元U1之構成之說明,設在反射鏡110與反射鏡114之間之圓柱狀透鏡CYa,在與掃描方向正交之Z方向(非掃描方向)使光束LB1在多面鏡PM之反射面RP上聚光(收斂)成往與XY面平行之方向延伸之長橢圓狀(狹縫狀)。藉由此圓柱狀透鏡CYa,即使反射面RP相對於Z方向(Z軸)傾斜之情形(有面倒下誤差之情形),亦可抑制其影響,可抑制照射至基板FS上之光束LB1形成之點光之照射位置在基板FS之搬送方向(X方向)錯開。Returning to the description of the configuration of the scanning unit U1, the cylindrical lens CYa provided between the
被多面鏡PM反射之光束LB1照射至包含聚光透鏡之fθ透鏡FT。具有往X軸方向延伸之光軸之fθ透鏡FT,係將藉由多面鏡PM反射之光束LB1在與XY平面平行之平面以與X軸平行之方式投射至反射鏡122之遠心系掃描透鏡。光束LB1對fθ透鏡FT之入射角θ係依據多面鏡PM之旋轉角(θ/2)變化。fθ透鏡FT將光束LB1投射至與其入射角θ成正比之基板FS之被照射面上之像高位置。設焦點距離為fo、像高位置為y,則fθ透鏡FT具有y=fo・θ之關係。是以,能藉由此fθ透鏡FT使光束LB1(點光SP)往Y方向正確且等速地掃描。在對fθ透鏡FT之入射角為0度時,射入fθ透鏡FT之光束LB1沿著fθ透鏡FT之上行進。The light beam LB1 reflected by the polygon mirror PM is irradiated to the fθ lens FT including the condenser lens. The fθ lens FT having an optical axis extending in the X-axis direction is a telecentric scanning lens that projects the light beam LB1 reflected by the polygon mirror PM to the
從fθ透鏡FT照射之光束LB1係透過反射鏡122在基板FS上成為點光SP照射。設在fθ透鏡FT與反射鏡122之間之圓柱狀透鏡CYb使聚光在基板FS上之光束LB1之點光SP成為直徑數μm程度 (例如,3μm)之微小圓形,其母線與Y方向平行。藉此,在基板FS上規定點光(掃描點)SP形成之往Y方向延伸之描繪線SL1(參照圖5)。無圓柱狀透鏡CYb之情形,藉由多面鏡PM之前方之圓柱狀透鏡CYa之作用,聚光在基板FS上之點光成為往與掃描方向(Y方向)正交之方向(X方向)延伸之長橢圓形。The light beam LB1 irradiated from the fθ lens FT passes through the
如上述,在基板FS往X方向搬送之狀態下,藉由各掃描單元U1~U6使光束LB之點光SP往掃描方向(Y方向)掃描,將既定圖案描繪在基板FS上。此各掃描單元U1~U6係以在基板FS上之不同區域掃描之方式配置在描繪頭支承部36。此外,設在基板FS上之點光SP之掃描方向之尺寸(描繪線之長度)為Ds、點光SP在基板FS上之掃描速度(相對掃描之速度)為Vs時,光束LB之振盪頻率Fs必須滿足Fs≧Vs/Ds之關係。由於光束LB為脈衝光,因此若振盪頻率Fs未滿足Fs≧Vs/Ds之關係,則光束LB之點光SP會隔著既定間隔(間隙)照射至基板FS上。若振盪頻率Fs滿足Fs≧Vs/Ds之關係,則點光SP能以在掃描方向彼此重疊之方式照射至基板FS上,因此即使為脈衝振盪之光束LB,亦可將在掃描方向實質上連續之直線圖案良好地描繪在基板FS上。此外,點光SP之掃描速度Vs,多面鏡PM之旋轉速度變快則變快。As described above, in a state where the substrate FS is transported in the X direction, the spot light SP of the light beam LB is scanned in the scanning direction (Y direction) by the scanning units U1 to U6 to draw a predetermined pattern on the substrate FS. The scanning units U1 to U6 are arranged on the
圖6係顯示各掃描單元U1~U6之多面鏡PM與複數條描繪線SLn(SL1~SL6)之掃描方向之關係之圖。在複數個掃描單元U1, U3, U5與複數個掃描單元U2, U4, U6,反射鏡114、多面鏡PM、及fθ透鏡FT相對於中心面Poc呈對稱之構成。因此,藉由使各掃描單元U1~U6之多面鏡PM往相同方向(往左)旋轉,各掃描單元U1, U3, U5,從描繪開始位置朝向描繪結束位置往-Y方向使光束LB之點光SP掃描,各掃描單元U2, U4, U6,從描繪開始位置朝向描繪結束位置往+Y方向使光束LB之點光SP掃描。此外,亦可藉由使各掃描單元U2, U4, U6之多面鏡PM之旋轉方向成為與各掃描單元U1, U3, U5之多面鏡PM之旋轉方向為相反方向,使各掃描單元U1~U6之光束LB之點光SP之掃描方向在相同方向(+Y方向或-Y方向)一致。6 is a diagram showing the relationship between the polygon mirror PM of each scanning unit U1 to U6 and the scanning directions of a plurality of drawing lines SLn (SL1 to SL6). The plurality of scanning units U1, U3, U5 and the plurality of scanning units U2, U4, U6, the reflecting
此處,由於多面鏡PM旋轉,反射面RP之角度亦隨時間經過而變化。是以,能使射入多面鏡PM之特定反射面RP之光束LB射入fθ透鏡FT之多面鏡PM之旋轉角度α受限制。Here, since the polygon mirror PM rotates, the angle of the reflection surface RP also changes with time. Therefore, the rotation angle α of the polygonal mirror PM that allows the light beam LB incident on the specific reflection surface RP of the polygonal mirror PM to enter the fθ lens FT is restricted.
圖7係用以說明能以掃描單元Un之多面鏡PM之反射面RP射入fθ透鏡FT之方式使光束LBn偏向(反射)之多面鏡PM之旋轉角度α之圖。此旋轉角度α,係掃描單元Un之多面鏡PM可藉由一個反射面RP使點光SP在基板FS之被照射面上掃描之多面鏡PM之最大掃描旋轉角度範圍。以下,將旋轉角度α稱為最大掃描旋轉角度範圍。多面鏡PM旋轉最大掃描旋轉角度範圍α之期間成為點光SP之有效掃描期間(最大掃描時間)。此最大掃描旋轉角度範圍α對應上述描繪線SLn之最大掃描長度,最大掃描旋轉角度範圍α愈大則最大掃描長度愈長。旋轉角度β係表示從光束LB開始射入特定之一個反射面RP時之多面鏡PM之角度至對該特定之反射面RP之入射結束時之多面鏡PM之角度之旋轉角度。亦即,旋轉角度β係多面鏡PM旋轉反射面RP之一面之角度。旋轉角度β係藉由多面鏡PM之反射面RP之數Np規定,能以β≒360/Np表示。是以,掃描單元Un之多面鏡PM之該特定之反射面RP無法使點光SP在基板FS之被照射面上掃描、亦即被多面鏡PM之該特定之反射面RP反射之反射光無法射入fθ透鏡FT之多面鏡PM之非掃描旋轉角度範圍r係以r=β-α之關係式表示。此多面鏡PM旋轉非掃描旋轉角度範圍r之期間成為點光SP之無效掃描期間。在此非掃描旋轉角度範圍r,掃描單元Un無法使光束LBn照射至基板FS上。此旋轉角度α與非掃描旋轉角度範圍r具有數式(1)之關係。 r=(360度/Np)-α …(1) (其中,N為多面鏡PM具有反射面RP之數) 7 is a diagram for explaining the rotation angle α of the polygon mirror PM that can deflect (reflect) the light beam LBn toward the fθ lens FT by the reflection surface RP of the polygon mirror PM of the scanning unit Un. This rotation angle α is the maximum scanning rotation angle range of the polygon mirror PM that the polygon mirror PM of the scanning unit Un can scan the spot light SP on the illuminated surface of the substrate FS through a reflective surface RP. Hereinafter, the rotation angle α is referred to as the maximum scanning rotation angle range. The period during which the polygon mirror PM rotates the maximum scanning rotation angle range α becomes the effective scanning period (maximum scanning time) of the spot light SP. The maximum scan rotation angle range α corresponds to the maximum scan length of the above-mentioned drawing line SLn. The larger the maximum scan rotation angle range α, the longer the maximum scan length. The rotation angle β represents the rotation angle from the angle of the polygon mirror PM when the light beam LB starts to enter a specific reflection surface RP to the angle of the polygon mirror PM when the incidence to the specific reflection surface RP ends. That is, the rotation angle β is the angle at which the polygon mirror PM rotates one of the reflection surfaces RP. The rotation angle β is defined by the number Np of the reflection surface RP of the polygon mirror PM, and can be expressed by β≒360/Np. Therefore, the specific reflection surface RP of the polygon mirror PM of the scanning unit Un cannot make the spot light SP scan on the illuminated surface of the substrate FS, that is, the reflected light reflected by the specific reflection surface RP of the polygon mirror PM cannot The non-scanning rotation angle range r of the polygon mirror PM incident on the fθ lens FT is expressed by the relational expression of r=β-α. The period during which the polygon mirror PM rotates the non-scanning rotation angle range r becomes the invalid scanning period of the spot light SP. In this non-scanning rotation angle range r, the scanning unit Un cannot irradiate the light beam LBn onto the substrate FS. The rotation angle α and the non-scanning rotation angle range r have a relationship of formula (1). r=(360°/Np)-α …(1) (Where N is the number of polygonal mirror PM with reflective surface RP)
在本第1實施形態,由於多面鏡PM具有八個反射面RP,因此N=8。是以,數式(1)能以數式(2)表示。 r=45度-α …(2) In the first embodiment, since the polygon mirror PM has eight reflection surfaces RP, N=8. Therefore, the formula (1) can be expressed by the formula (2). r=45 degrees-α …(2)
最大掃描旋轉角度範圍α係依據多面鏡PM與fθ透鏡FT之距離等條件改變。例如,若設最大掃描旋轉角度範圍α為15度,則非掃描旋轉角度範圍r成為30度,多面鏡PM之掃描效率,在圖7中,成為α/β=1/3。亦即,掃描單元Un之多面鏡PM旋轉非掃描旋轉角度範圍r(30度)之期間,射入多面鏡PM之光束LBn無用。The maximum scanning rotation angle range α is changed according to conditions such as the distance between the polygon mirror PM and the fθ lens FT. For example, if the maximum scanning rotation angle range α is 15 degrees, the non-scanning rotation angle range r becomes 30 degrees, and the scanning efficiency of the polygon mirror PM becomes α/β=1/3 in FIG. 7. That is, while the polygon mirror PM of the scanning unit Un rotates the non-scanning rotation angle range r (30 degrees), the light beam LBn incident on the polygon mirror PM is useless.
因此,在本第1實施形態,切換使來自一個光源裝置14之光束LB射入之掃描單元Un,將光束LB週期性地分配至三個掃描單元Un,可謀求掃描效率之提升。亦即,藉由使三個掃描單元Un之描繪期間(使點光SP掃描之掃描期間)彼此錯開,來自光源裝置14之光束LB不會無用,可謀求掃描效率之提升。Therefore, in the first embodiment, the scanning unit Un that causes the light beam LB from one
此外,有效掃描期間(有效描繪期間)即最大掃描旋轉角度範圍α雖為光束LBn射入fθ透鏡FT後點光SP可在描繪線SLn上有效掃描之範圍,但最大掃描旋轉角度範圍α亦依據fθ透鏡FT之前側之焦點距離等改變。在與上述相同八面之多面鏡PM,最大掃描旋轉角度範圍α為10度之情形,根據數式(2),非描繪期間即非掃描旋轉角度r為35度,此時之描繪之掃描效率成為約1/4(10/45)。相反地,最大掃描旋轉角度範圍α為20度之情形,根據數式(2),非描繪期間即非掃描旋轉角度r為25度,此時之描繪之掃描效率成為約1/2(20/45)。此外,掃描效率為1/2以上之情形,使光束LB分配之掃描單元Un之數亦可為二個。亦即,能使光束LB分配之掃描單元Un之數被掃描效率限制。In addition, the effective scanning period (effective drawing period), that is, the maximum scanning rotation angle range α is the range where the spot light SP can be effectively scanned on the drawing line SLn after the light beam LBn enters the fθ lens FT, but the maximum scanning rotation angle range α also depends on The focal length and the like on the front side of the fθ lens FT change. In the case of the same eight-sided polygon mirror PM as above, the maximum scanning rotation angle range α is 10 degrees, according to equation (2), the non-scanning rotation angle r is 35 degrees during the non-drawing period, and the scanning efficiency of the drawing at this time It becomes approximately 1/4 (10/45). Conversely, when the maximum scanning rotation angle range α is 20 degrees, according to equation (2), the non-scanning rotation angle r is 25 degrees during the non-drawing period, and the scanning efficiency of the drawing at this time becomes about 1/2(20/ 45). In addition, when the scanning efficiency is more than 1/2, the number of scanning units Un allocated to the light beam LB may also be two. That is, the number of scanning units Un that can distribute the light beam LB is limited by the scanning efficiency.
圖8係將光導入光學系40a與複數個掃描單元U1, U3, U5之光路示意化之圖。從控制裝置18施加至選擇用光學元件(AOM)50之驅動訊號(高頻訊號)為ON且施加至選擇用光學元件58, 66之驅動訊號為OFF之情形,選擇用光學元件50使射入之光束LB繞射。藉此,被選擇用光學元件50繞射之1次繞射光即光束LB1係透過反射鏡52射入掃描單元U1,光束LB不會射入掃描單元U3, U5。同樣地,從控制裝置18施加至選擇用光學元件(AOM)58之驅動訊號為ON且施加至選擇用光學元件50, 66之驅動訊號為OFF之情形,透射過ON狀態之選擇用光學元件50之光束LB射入選擇用光學元件58,選擇用光學元件58使射入之光束LB繞射。藉此,被選擇用光學元件58繞射之1次繞射光即光束LB3係透過反射鏡60射入掃描單元U3,光束LB不會射入掃描單元U1, U5。又,從控制裝置18施加至選擇用光學元件(AOM)66之驅動訊號為ON且施加至選擇用光學元件50, 58之驅動訊號為OFF之情形,透射過OFF狀態之選擇用光學元件50, 58之光束LB射入選擇用光學元件66,選擇用光學元件66使射入之光束LB繞射。藉此,被選擇用光學元件66繞射之1次繞射光即光束LB5係藉由反射鏡68射入掃描單元U5,光束LB不會射入掃描單元U1, U3。FIG. 8 is a schematic diagram of optical paths for introducing light into the
如上述,藉由將光導入光學系40a之複數個選擇用光學元件50, 58, 66沿著來自光源裝置14之光束LB之行進方向直列配置,複數個選擇用光學元件50, 58, 66可切換選擇是否使光束LBn(LB1, LB3, LB5)射入複數個掃描單元U1, U3, U5中任一個掃描單元Un。控制裝置18,以光束LB射入之掃描單元Un以例如掃描單元U1→掃描單元U3→掃描單元U5→掃描單元U1之順序週期性切換之方式,控制複數個選擇用光學元件50, 58, 66。亦即,以光束LBn(LB1, LB3, LB5)依序在既定掃描時間射入複數個掃描單元U1, U3, U5之方式進行切換。As described above, by introducing light into the plurality of selection
掃描單元U1之多面鏡PM,在光束LB1射入掃描單元U1之期間,其旋轉被控制裝置18控制,能使射入之光束LB1朝向fθ透鏡FT反射。亦即,在光束LB1射入掃描單元U1之期間與掃描單元U1進行之光束LB1之點光SP之掃描期間(圖7中之最大掃描旋轉角度範圍α)同步。亦即,掃描單元U1之多面鏡PM,與光束LB1射入之期間同步地,以使射入掃描單元U1之光束LB1之點光SP沿著描繪線SL1掃描之方式使光束LB1偏向。掃描單元U3, U5之多面鏡PM亦同樣地,在光束LB3, LB5射入掃描單元U3, U5之期間,其旋轉被控制裝置18控制,能使射入之光束LB3, LB5反射至fθ透鏡FT。亦即,在光束LB3, LB5射入掃描單元U3, U5之期間與掃描單元U3, U5進行之光束LB3, LB5之點光SP之掃描期間同步。亦即,掃描單元U3, U5之多面鏡PM,與光束LB3, LB5射入之期間同步地,以使射入掃描單元U3, U5之光束LB之點光SP沿著描繪線SL3, SL5掃描之方式使光束LB3, LB5偏向。During the polygon mirror PM of the scanning unit U1, while the light beam LB1 enters the scanning unit U1, its rotation is controlled by the
如上述,來自一個光源裝置14a之光束LB係分時地供應至三個掃描單元U1, U3, U5之任一個掃描單元Un,因此掃描單元U1, U3, U5之各個之多面鏡PM,係以使旋轉速度一致並同時其旋轉角度位置保持一定角度差(保持相位差)之方式被控制旋轉驅動。關於其控制之具體例將於後述。As described above, the light beam LB from one
又,控制裝置18,根據規定藉由從各掃描單元U1, U3, U5照射之光束LB1, LB3, LB5之點光SP在基板FS上描繪之圖案之圖案資料(描繪資料),控制供應至各掃描單元U1, U3, U5之描繪用光學元件106之驅動訊號(高頻訊號)之ON/OFF。藉此,各掃描單元U1, U3, U5之描繪用光學元件106,根據該ON/OFF之驅動訊號使射入之光束LB1, LB3, LB5繞射,能調變點光SP之強度。此圖案資料,係例如設描繪圖案之一點(像素)為3×3μm,將就每一點使驅動訊號為ON(描繪)時為「1」且使驅動訊號為OFF(非描繪)時為「0」之雙值資料產生為位元圖資料,就各掃描單元Un暫時儲存在記憶體(RAM)內。Further, the
進一步詳細說明就各掃描單元Un設置之圖案資料,圖案資料(描繪資料),係以沿著點光SP之掃描方向(主掃描方向,Y方向)之方向為行方向、以沿著基板FS之搬送方向(副掃描方向,X方向)之方向為列方向般地二維分解之複數個像素資料(以下,稱為像素資料)所構成之位元圖資料。此像素資料係「0」或「1」之1位元資料。「0」之像素資料意指照射至基板FS之點光SP之強度為低位準,「1」之像素資料意指照射至基板FS上之點光SP之強度為高位準。圖案資料之一列之像素資料對應一條描繪線SLn(SL1~SL6),沿著一條描繪線SLn(SL1~SL6)投射至基板FS之點光SP之強度係依據一列之像素資料調變。將此一列之像素資料稱為序列資料(描繪資訊)。亦即,圖案資料係序列資料DLn在列方向排列之位元圖資料。以DL1表示掃描單元U1之圖案資料之序列資料DLn,同樣地,會有以DL2~DL6表示掃描單元U2~U6之圖案資料之序列資料DLn之情形。Further detailing the pattern data set for each scanning unit Un, the pattern data (drawing data) are taken along the scanning direction of the spot light SP (main scanning direction, Y direction) as the row direction, and along the substrate FS The direction of the conveying direction (sub-scanning direction, X direction) is bitmap data composed of a plurality of pixel data (hereinafter, referred to as pixel data) decomposed two-dimensionally like a column direction. This pixel data is 1-bit data of "0" or "1". The pixel data of "0" means that the intensity of the spot light SP irradiated to the substrate FS is at a low level, and the pixel data of "1" means that the intensity of the spot light SP irradiated to the substrate FS is at a high level. The pixel data in one row of the pattern data corresponds to a drawing line SLn (SL1~SL6), and the intensity of the spot light SP projected onto the substrate FS along the one drawing line SLn (SL1~SL6) is modulated according to the pixel data in a row. The pixel data in this row is called sequence data (drawing information). That is, the pattern data is bitmap data in which the sequence data DLn is arranged in the row direction. DL1 represents the serial data DLn of the pattern data of the scanning unit U1. Similarly, there may be cases where DL2 to DL6 represent the serial data DLn of the pattern data of the scanning units U2 to U6.
控制裝置18,根據光束LBn射入之掃描單元Un之圖案資料(由「0」、「1」構成之序列資料DLn),將ON/OFF之驅動訊號輸入光束LBn射入之掃描單元Un之描繪用光學元件(AOM)106。描繪用光學元件106,若輸入ON之驅動訊號則使射入之光束LBn繞射後照射至反射鏡110,若輸入OFF之驅動訊號則將射入之光束LBn照射至未圖示之上述反射板或上述吸收體。其結果,光束LBn射入之掃描單元Un,若ON之驅動訊號輸入描繪用光學元件106,則光束LBn之點光SP照射至基板FS上(點光SP之強度變高),若OFF之驅動訊號輸入描繪用光學元件106,則光束LBn之點光不會照射至基板FS上(點光SP之強度成為0)。是以,光束LBn射入之掃描單元Un可沿著描繪線SLn在基板FS上描繪以圖案資料為依據之圖案。The
例如,控制裝置18,在光束LB3射入掃描單元U3之情形,根據掃描單元U3之圖案資料,對掃描單元U3之描繪用光學元件106進行ON/OFF之切換(驅動)。藉此,掃描單元U3可沿著描繪線SL3在基板FS上描繪以圖案資料為依據之圖案。以上述方式,各掃描單元U1, U3, U5可沿著描繪線SL1, SL3, SL5調變點光(掃描點光)SP之強度,在基板FS上描繪以圖案資料為依據之圖案。For example, when the light beam LB3 enters the scanning unit U3, the
此外,雖使用圖8說明了光導入光學系40a與複數個掃描單元U1, U3, U5之動作,但關於光導入光學系40b與複數個掃描單元U2, U4, U6亦相同。簡單說明,控制裝置18,以來自光源裝置14b之光束LBn射入之偶數號掃描單元Un以例如掃描單元U2→掃描單元U4→掃描單元U6→掃描單元U2之順序切換之方式,控制複數個選擇用光學元件50, 58, 66。亦即,以光束LB依序在既定掃描時間射入複數個掃描單元U2, U4, U6之各個之方式進行切換。各掃描單元U2, U4, U6之多面鏡PM,在控制裝置18之控制下,與光束LBn射入之期間同步地,以使射入之光束LBn之點光SP沿著描繪線SL2, SL4, SL6掃描之方式使光束LBn偏向。又,控制裝置18,以各掃描單元U2, U4, U6可沿著描繪線SL2, SL4, SL6在基板FS上描繪以圖案資料為依據之圖案之方式,根據光束LBn(LB2, LB4, LB6)射入之掃描單元Un(U2, U4, U6)之圖案資料(由「0」、「1」構成之序列資料DLn(DL2, DL4, DL6)),控制該掃描單元Un(U2, U4, U6)之描繪用光學元件(AOM)106。In addition, although the operation of the light introducing
如上述,在上述第1實施形態,沿著來自光源裝置14a(14b)之光束LB之行進方向,直列配置有複數個選擇用光學元件50, 58, 66,因此能藉由此複數個選擇用光學元件50, 58, 66使光束LBn以分時方式選擇性地射入複數個掃描單元U1, U3, U5(掃描單元U2, U4, U6)中任一個掃描單元Un,光束LB不會無用,可謀求光束LB之利用效率之提升。As described above, in the above-described first embodiment, a plurality of selection
又,使複數個(此處為三個)掃描單元Un之各個之多面鏡PM之旋轉速度與旋轉相位彼此同步,且使藉由複數個選擇用光學元件50, 58, 66使光束LBn射入各掃描單元Un之期間同步,多面鏡PM以點光SP在基板FS上掃描之方式使光束LBn偏向,因此光束LB不會無用,可謀求掃描效率之提升。In addition, the rotation speed and rotation phase of each polygon mirror PM of the plurality (three in this case) of the scanning unit Un are synchronized with each other, and the light beam LBn is incident through the plurality of selection
此外,選擇用光學元件(AOM)50, 58, 66只要在掃描單元Un之各個之多面鏡PM進行之點光SP之一次掃描期間為ON狀態即可。例如,若設多面鏡PM之反射面數為Np、多面鏡PM之旋轉速度Vp為(rpm),則對應多面鏡PM之反射面RP之一面之旋轉角度β之時間Tss成為Tss=60/(Np・Vp)秒。例如,在反射面數Np為8、旋轉速度Vp為三萬之情形,多面鏡PM之一旋轉為2毫秒,時間Tss為0.25毫秒。將此換算成頻率則為4kHz,亦即相較於將紫外域之波長之光束LB回應圖案資料以數十MHz程度高速調變之聲光調變元件(描繪用光學元件106),只要為非常低之回應頻率之聲光調變元件即可。因此,選擇用光學元件(AOM)50, 58, 66可使用相對於射入之光束LB(0次光)偏向之1次繞射光即LBn(LB1~LB6)之繞射角較大者。是以,將相對於使選擇用光學元件50, 58, 66直線透射過之光束LB之進路偏向之光束LBn(LB1~LB6)導至掃描單元Un之反射鏡52, 60, 68(參照圖3、圖4)之配置變容易。In addition, the optical elements (AOM) 50, 58, 66 may be selected to be in the ON state during one scan of the spot light SP performed by each polygon mirror PM of the scanning unit Un. For example, if the number of reflecting surfaces of the polygon mirror PM is Np and the rotational speed Vp of the polygon mirror PM is (rpm), the time Tss corresponding to the rotation angle β of one of the reflecting surfaces RP of the polygon mirror PM becomes Tss=60/( Np·Vp) seconds. For example, in the case where the number of reflecting surfaces Np is 8 and the rotation speed Vp is 30,000, one of the polygon mirrors PM rotates for 2 milliseconds and the time Tss is 0.25 milliseconds. This is converted into a frequency of 4kHz, that is, compared to the acousto-optic modulation element (drawing optical element 106) that modulates the beam LB of the ultraviolet wavelength in response to the pattern data at a high speed of tens of MHz, as long as it is very A low response frequency acousto-optic modulating element is sufficient. Therefore, the selection of optical elements (AOM) 50, 58, 66 can use the first diffracted light that is deflected relative to the incident light beam LB (0th order light), that is, the larger diffracted angle of LBn (LB1~LB6). Therefore, the light beam LBn (LB1 to LB6) deflected with respect to the path of the light beam LB linearly transmitted through the selection
(上述第1實施形態之變形例)
上述第1實施形態亦可變形如下。在上述第1實施形態,將光束LB分配至三個掃描單元Un,但在本變形例,將來自一個光源裝置14之光束LB分配至五個掃描單元Un。
(Modification of the first embodiment described above)
The first embodiment described above may be modified as follows. In the first embodiment described above, the light beam LB is distributed to three scanning units Un. However, in this modification, the light beam LB from one
圖9係顯示上述第1實施形態之變形例之描繪頭16之構成之圖。在本變形例,光源裝置14為一個,描繪頭16具有五個掃描單元Un(U1~U5)。此外,對與上述第1實施形態相同之構成賦予相同符號或省略圖示,僅說明不同部分。此外,圖9中,圖示省略圖3中所示之圓柱狀透鏡CYb。FIG. 9 is a diagram showing the configuration of the drawing
在本變形例,替代光導入光學系40a, 40b,使用光導入光學系(光束切換構件)130。光導入光學系130,如圖10所示,除了上述圖4所示之聚光透鏡42、準直鏡44、反射鏡46、聚光透鏡48、選擇用光學元件50、反射鏡52、準直鏡54、聚光透鏡56、選擇用光學元件58、反射鏡60、準直鏡62、聚光透鏡64、選擇用光學元件66、反射鏡68、及吸收體70之外,進一步具備選擇用光學元件132、反射鏡134、準直鏡136、聚光透鏡138、選擇用光學元件140、反射鏡142、準直鏡144、及聚光透鏡136。In this modification, instead of the light introduction
選擇用光學元件132、準直鏡136、及聚光透鏡138,係依序設在聚光透鏡56與選擇用光學元件58之間。是以,在本變形例,選擇用光學元件50,在來自控制裝置18之驅動訊號(高頻訊號)為OFF時,使射入之光束LB直接透射過後照射至選擇用光學元件132,聚光透鏡56使射入選擇用光學元件132之光束LB在選擇用光學元件132內聚光成光束腰寬。The selection
選擇用光學元件132對光束LB具有透射性,使用例如聲光調變元件(AOM)。選擇用光學元件132,在來自控制裝置18之驅動訊號為OFF時,使射入之光束LB直接透射過後照射至選擇用光學元件58,在來自控制裝置18之驅動訊號(高頻訊號)為ON時,將使射入之光束LB繞射之1次繞射光即光束LB2照射至反射鏡134。反射鏡134使射入之光束LB2反射,射入掃描單元U2之準直鏡100。亦即,藉由控制裝置18將選擇用光學元件132切換成ON/OFF,選擇用光學元件132切換是否使光束LB2射入掃描單元U2。準直鏡136使照射至選擇用光學元件58之光束LB成為平行光,聚光透鏡138使藉由準直鏡136成為平行光之光束LB在選擇用光學元件58內聚光成光束腰寬。The selection
選擇用光學元件140、準直鏡144、及聚光透鏡146,係依序設在聚光透鏡64與選擇用光學元件66之間。是以,在本變形例,選擇用光學元件58,在來自控制裝置18之驅動訊號為OFF時,使射入之光束LB直接透射過後照射至選擇用光學元件140,聚光透鏡64使射入選擇用光學元件140之光束LB在選擇用光學元件140內聚光成光束腰寬。The selection
選擇用光學元件140對光束LB具有透射性,使用例如聲光調變元件(AOM)。選擇用光學元件140,在來自控制裝置18之驅動訊號為OFF時,使射入之光束LB照射至選擇用光學元件66,在來自控制裝置18之驅動訊號(高頻訊號)為ON時,將使射入之光束LB繞射之1次繞射光即光束LB4照射至反射鏡142。反射鏡142使射入之光束LB4反射,照射至掃描單元U4之準直鏡100。亦即,藉由控制裝置18將選擇用光學元件140切換成ON/OFF,選擇用光學元件140切換是否使光束LB4射入掃描單元U4。準直鏡144使照射至選擇用光學元件66之光束LB成為平行光,聚光透鏡146使藉由準直鏡144成為平行光之光束LB在選擇用光學元件66內聚光成光束腰寬。The selection
藉由將此複數個選擇用光學元件(AOM)50, 58, 66, 132, 140序列(直列)配置,能使光束LBn射入複數個掃描單元U1~U5中任一個掃描單元Un。控制裝置18,以光束LBn射入之掃描單元Un以例如掃描單元U1→掃描單元U2→掃描單元U3→掃描單元U4→掃描單元U5→掃描單元U1之順序週期性切換之方式,控制複數個選擇用光學元件50, 132, 58, 140, 66。亦即,以光束LBn依序在既定掃描時間射入複數個掃描單元U1~U5之各個之方式進行切換。又,各掃描單元U1~U5之多面鏡PM,在控制裝置18之控制下,與光束LBn射入之期間同步地,以使射入之光束LBn之點光SP沿著描繪線SL1~SL5掃描之方式使光束LBn偏向。又,控制裝置18,以各掃描單元Un可沿著描繪線SLn在基板FS上描繪以圖案資料為依據之圖案之方式,根據光束LBn射入之掃描單元Un之圖案資料(由「0」、「1」構成之序列資料DLn),控制該掃描單元Un之描繪用光學元件(AOM)106。By arranging the plurality of selective optical elements (AOM) 50, 58, 66, 132, and 140 in series (in-line), the light beam LBn can be incident on any one of the plurality of scanning units U1 to U5. The
亦即,本變形例之情形,五個掃描單元U1~U5之各多面鏡PM係以旋轉角度位置以一定角度逐一錯開相位之方式同步旋轉。又,本實施形態之情形,將光束(雷射光)LB以分時方式分配至五個掃描單元U1~U5,因此以光束LBn可照射至多面鏡PM之一個反射面RP之角度範圍(圖7中之旋轉角度β)與被反射面RP反射之光束LBn射入fθ透鏡FT之最大偏轉角(圖7中之角度2α)滿足β≧5α之方式,設定fθ透鏡FT之前側焦點距離或多面鏡PM之反射面數Np。That is, in the case of this modified example, each polygon mirror PM of the five scanning units U1 to U5 rotates synchronously at a certain angle with phase shifted by a certain angle. Furthermore, in the case of this embodiment, the light beam (laser light) LB is distributed to the five scanning units U1 to U5 in a time-sharing manner, so the angle range of one reflection surface RP of the polygon mirror PM can be irradiated with the light beam LBn (FIG. 7 The rotation angle β in) and the maximum deflection angle of the light beam LBn reflected by the reflection surface RP into the fθ lens FT (angle 2α in FIG. 7) satisfy β≧5α, set the focal distance or polygon mirror in front of the fθ lens FT PM reflection surface number Np.
如上述,在本變形例,光束LB不會沒用,可提高來自光源裝置14之光束LB之利用效率,謀求掃描效率之提升。此外,在本變形例,雖將來自一個光源裝置14之光束LB分配至五個掃描單元Un,但亦可將來自一個光源裝置14之光束LB分配至二個掃描單元Un,亦可分配至四個或六個以上之掃描單元Un。此情形,若設分配之掃描單元之數為n個,則以光束LBn可照射至多面鏡PM之一個反射面RP之角度範圍(圖7中之旋轉角度β)與被反射面RP反射之光束LB射入fθ透鏡FT之最大偏轉角(圖7中之角度2α)滿足β≧n×α之方式,設定fθ透鏡FT之前側焦點距離或多面鏡PM之反射面數Np。又,如在上述第1實施形態所說明,將來自二個光源裝置14(14a, 14b)之光束LB分配至複數個掃描單元Un之情形,亦不限於三個,亦可分配至任意數之掃描單元Un。例如,亦可將來自光源裝置14a之光束LB分配至五個掃描單元Un,將來自光源裝置14b之光束LB分配至四個掃描單元Un。As described above, in this modified example, the light beam LB is not useless, and the utilization efficiency of the light beam LB from the
(第2實施形態)
在上述第1實施形態,由於在各掃描單元Un內之多面鏡PM之前方設置描繪用光學元件(AOM)106,因此使用之描繪用光學元件106之數變多,成本變高。因此,在本第2實施形態,在來自一個光源裝置14之光束LB之光路上設置一個描繪用光調變器(AOM),使用該一個描繪用光調變器調變從複數個掃描單元Un照射至基板FS之光束LBn之強度並描繪圖案。亦即,在第2實施形態,在複數個掃描單元Un之前方僅配置一個要求高回應性之描繪用光調變器(AOM),在各掃描單元Un側配置回應性低即可之選擇用光學元件(AOM)。
(Second embodiment)
In the first embodiment described above, since the optical element for drawing (AOM) 106 is provided in front of the polygon mirror PM in each scanning unit Un, the number of optical elements for drawing 106 used is increased and the cost is increased. Therefore, in the second embodiment, a drawing optical modulator (AOM) is provided on the optical path of the light beam LB from one
圖11係顯示第2實施形態之描繪頭16之構成之圖。圖12係顯示圖11所示之光導入光學系40a之圖。對與上述第1實施形態相同之構成賦予相同符號,僅說明不同部分。此外,圖11中,圖示省略圖3中所示之圓柱狀透鏡CYb。光導入光學系40a, 40b具有相同構成,因此此處說明光導入光學系40a,省略光導入光學系40b之說明。如圖12所示,光導入光學系40a,除了上述圖4所示之聚光透鏡42、準直鏡44、反射鏡46、聚光透鏡48、選擇用光學元件50、反射鏡52、準直鏡54、聚光透鏡56、選擇用光學元件58、反射鏡60、準直鏡62、聚光透鏡64、選擇用光學元件66、反射鏡68、及吸收體70之外,進一步具備作為描繪用光調變器之描繪用光學元件(AOM)150、準直鏡152、聚光透鏡154、及吸收體156。在本第2實施形態,如圖11所示,在各掃描單元U1~U6內不具有第1實施形態之描繪用光學元件106。FIG. 11 is a diagram showing the configuration of the drawing
描繪用光學元件150、準直鏡152、及聚光透鏡154,係依序設在聚光透鏡48與選擇用光學元件50之間。是以,在本第2實施形態,反射鏡46使藉由準直鏡44成為平行光之光束LB反射後朝向描繪用光學元件150。聚光透鏡48使射入描繪用光學元件150之光束LB在描繪用光學元件150內聚光(收斂)成光束腰寬。The drawing
描繪用光學元件150對光束LB具有透射性,使用例如聲光調變元件(AOM)。描繪用光學元件150,設在相較於選擇用光學元件50, 58, 66中位於最靠光源裝置14(14a)側之初段之選擇用光學元件50靠光源裝置14(14a)側。描繪用光學元件150,在來自控制裝置18之驅動訊號(高頻訊號)為OFF時,使射入之光束LB照射至吸收體156,在來自控制裝置18之驅動訊號(高頻訊號)為ON時,將使射入之光束LB繞射之1次繞射光即光束(描繪光束)LB照射至初段之選擇用光學元件50。準直鏡152使照射至選擇用光學元件50之光束LB成為平行光,聚光透鏡154使藉由準直鏡152成為平行光之光束LB在選擇用光學元件50內聚光(收斂)成光束腰寬。The
如圖11所示,掃描單元U1~U6具有準直鏡100、反射鏡102、反射鏡110、圓柱狀透鏡CYa、反射鏡114、多面鏡PM、fθ透鏡FT、圓柱狀透鏡CYb(圖11中省略圖示)、及反射鏡122,進一步具有作為光束成形透鏡之第1成形透鏡158a及第2成形透鏡158b。亦即,在本第2實施形態,替代第1實施形態之聚光透鏡104及準直鏡108,在掃描單元U1~U6設有第1成形透鏡158a及第2成形透鏡158b。As shown in FIG. 11, the scanning units U1 to U6 have a
圖13係將圖12之光導入光學系40a與複數個掃描單元U1, U3, U5之光路示意化之圖。控制裝置18,根據規定藉由從各掃描單元U1, U3, U5照射之光束LB1, LB3, LB5之點光SP在基板FS上描繪之圖案之圖案資料(由「0」、「1」構成之序列資料DL1, DL3, DL6),將ON/OFF之驅動訊號(高頻訊號)輸出至光導入光學系40a之描繪用光學元件150。藉此,光導入光學系40a之描繪用光學元件150根據此ON/OFF之驅動訊號,能使射入之光束LB繞射,調變(ON/OFF)點光SP之強度。FIG. 13 is a schematic diagram of the optical path of introducing the light of FIG. 12 into the
詳細說明,控制裝置18,根據光束LBn射入之掃描單元Un之圖案資料,將ON/OFF之驅動訊號輸入描繪用光學元件150。描繪用光學元件150,若輸入ON之驅動訊號(高頻訊號),則使射入之光束LB繞射,照射至選擇用光學元件50(射入選擇用光學元件50之光束LB之強度變高)。另一方面,描繪用光學元件150,若輸入OFF之驅動訊號(高頻訊號),則使射入之光束LB照射至吸收體156(圖12)(射入選擇用光學元件50之光束LB之強度成為0)。是以,光束LBn射入之掃描單元Un可沿著描繪線SLn對基板FS照射強度已調變之光束LB,在基板FS上描繪以圖案資料為依據之圖案。In detail, the
例如,光束LB3射入掃描單元U3之情形,控制裝置18,根據掃描單元U3之圖案資料,將光導入光學系40a之描繪用光學元件150切換成ON/OFF。藉此,掃描單元U3可沿著描繪線SL3對基板FS照射強度已調變之光束LB,在基板FS上描繪以圖案資料為依據之圖案。光束LBn射入之掃描單元Un以例如掃描單元U1→掃描單元U3→掃描單元U5→掃描單元U1之方式依序切換。是以,控制裝置18,同樣地,以掃描單元U1之圖案資料→掃描單元U3之圖案資料→掃描單元U5之圖案資料→掃描單元U1之圖案資料之方式,依序切換決定傳送至光導入光學系40a之描繪用光學元件150之ON/OFF訊號之圖案資料。接著,控制裝置18根據依序切換之圖案資料控制光導入光學系40a之描繪用光學元件150。藉此,各掃描單元U1, U3, U5可沿著描繪線SL1, SL3, SL5對基板FS照射強度已調變之光束LB,在基板FS上描繪以圖案資料為依據之圖案。For example, when the light beam LB3 is incident on the scanning unit U3, the
以上,參照圖14~圖16詳細說明了第2實施形態適用之控制系之一部分之構成與其動作。此外,以下說明之構成及動作亦可適用於第1實施形態。圖14係作為一例之設在圖11、圖13中之三個掃描單元U1, U3, U5之各個之多面鏡PM之旋轉控制系之方塊圖,由於掃描單元U1, U3, U5之構成相同,因此對相同構件賦予相同符號。在掃描單元U1, U3, U5之各個設有光電偵測藉由多面鏡PM在基板FS上產生之描繪線(掃描線)SL1, SL3, SL5之掃描開始時序之原點感測器OP1, OP3, OP5。原點感測器OP1, OP3, OP5係對多面鏡PM之反射面RP投射光且接受其反射光之光電檢測器,每當點光SP來到緊鄰描繪線SL1, SL3, SL5之掃描開始點前之位置時,分別輸出脈衝狀之原點訊號SZ1, SZ3, SZ5。The configuration and operation of a part of the control system to which the second embodiment is applied have been described in detail above with reference to FIGS. 14 to 16. In addition, the configuration and operation described below can also be applied to the first embodiment. FIG. 14 is a block diagram of the rotation control system of the polygon mirror PM of each of the three scanning units U1, U3, U5 provided in FIGS. 11 and 13 as an example. Therefore, the same symbols are given to the same members. Each of the scanning units U1, U3, U5 is provided with a photoelectric detection origin sensor OP1, OP3 of the scanning start timing (scanning line) SL1, SL3, SL5 of the scan line (scan line) generated on the substrate FS by the polygon mirror PM , OP5. The origin sensors OP1, OP3, OP5 are photodetectors that project light on the reflective surface RP of the polygon mirror PM and receive the reflected light. Whenever the spot light SP comes to the scanning start point next to the drawing lines SL1, SL3, SL5 At the previous position, the pulse-shaped origin signals SZ1, SZ3 and SZ5 are output respectively.
時序測量部180,輸入原點訊號SZ1, SZ3, SZ5,測量原點訊號SZ1, SZ3, SZ5之各個之產生時序是否在既定容許範圍(時間間隔)內,若產生該容許範圍之誤差,則將與其對應之偏差資訊輸出至伺服控制裝置182。伺服控制裝置182對使各掃描單元U1, U3, U5內之多面鏡PM旋轉驅動之馬達Mp之各伺服驅動電路部輸出以偏差資訊為依據之指令值。馬達Mp之各伺服驅動電路部,係以輸入來自安裝在馬達Mp之旋轉軸之編碼器EN之升降脈衝訊號(以下,稱為編碼器訊號)並輸出對應多面鏡PM之旋轉速度之速度訊號之歸還電路部FBC、及輸入來自伺服控制裝置182之指令值與來自歸還電路部FBC之速度訊號並以成為對應指令值之旋轉速度之方式驅動馬達Mp之伺服驅動電路(放大器)SCC構成。此外,伺服驅動電路部(歸還電路部FBC、伺服驅動電路SCC)、時序測量部180、及伺服控制裝置182構成控制裝置18之一部分。The
在本第2實施形態,三個掃描單元U1, U3, U5內之各多面鏡PM必須將其旋轉角度位置保持一定之相位差並同時以相同速度旋轉,為了實現此,時序測量部180輸入原點訊號SZ1, SZ3, SZ5,例如進行圖15之時序圖所示之測量。In the second embodiment, each polygon mirror PM in the three scanning units U1, U3, U5 must maintain a certain phase difference in its rotation angle position and rotate at the same speed at the same time. In order to achieve this, the
圖15係以示意方式顯示三個多面鏡PM在旋轉角度以既定容許範圍內之相位差旋轉時產生之各種訊號波形。使各多面鏡PM旋轉之後一刻,原點訊號SZ1, SZ3, SZ5之相對相位差雖各自不同,但時序測量部180,例如,以原點訊號SZ1為基準,以與原點訊號SZ1相同之頻率(週期)產生其他原點訊號SZ3, SZ5,且以三個原點訊號SZ1, SZ3, SZ5間之時間間隔Ts1, Ts2, Ts3皆相等之狀態為基準值,測量對應相對於其之誤差之修正資訊。時序測量部180,將該修正資訊輸出至伺服控制裝置182,藉此對掃描單元U3, U5之各馬達Mp進行伺服控制,三個原點訊號SZ1, SZ3, SZ5之產生時序被控制成如圖15般Ts1=Ts2=Ts3般地穩定。FIG. 15 schematically shows various signal waveforms generated when the three polygon mirrors PM rotate at a rotation angle with a phase difference within a predetermined allowable range. Immediately after rotating each polygon mirror PM, the relative phase differences of the origin signals SZ1, SZ3, SZ5 are different, but the
若原點訊號SZ1, SZ3, SZ5之產生時序穩定,則時序測量部180對上述圖11~圖13中所示之選擇用光學元件50, 58, 66之各個輸出描繪致能(ON)訊號SPP1, SPP3, SPP5。描繪致能(ON)訊號SPP1, SPP3, SPP5,此處僅在H位準之期間中,使對應之選擇用光學元件50, 58, 66進行調變動作(光之偏向切換動作)。三個原點訊號SZ1, SZ3, SZ5穩定地維持一定之相位差(此處為原點訊號SZ1之週期之1/3),因此描繪致能訊號SPP1, SPP3, SPP5之各上升(L→H)亦維持一定之相位差。此描繪致能訊號SPP1, SPP3, SPP5,對應用以切換選擇用光學元件50, 58, 66之驅動訊號(高頻訊號)。If the timing of generating the origin signals SZ1, SZ3, and SZ5 is stable, the
描繪致能訊號SPP1, SPP3, SPP5之下降(H→L)之時序,係藉由以時序測量部180內之計數器測量在各描繪線SL1, SL3, SL5內用以使點光ON/OFF之時脈訊號CLK而設定。該時脈訊號CLK掌控描繪用光學元件150(或者圖3中之描繪用光學元件106)之ON/OFF之時序,由描繪線SLn(SL1, SL3, SL5)之長度、點光在基板FS上之尺寸、點光SP之掃描速度Vs等決定。例如,描繪線之長度為30mm,點光之尺寸(直徑)為6μm,使點光往掃描方向逐一重疊3μm而ON/OFF之情形,時序測量部180內之計數器,若計數時脈訊號CLK達100次(30mm/3μm),則使描繪致能訊號SPP1, SPP3, SPP5下降(H→L)即可。The timing of drawing down (H→L) of the enabling signals SPP1, SPP3, SPP5 is measured by the counter in the
又,設多面鏡PM之反射面為10面、其旋轉速度為Vp(rpm),則各原點訊號SZ1, SZ3, SZ5之頻率成為10Vp/60(Hz)。是以,時間間隔為Ts1=Ts2=Ts3穩定之情形,時間間隔Ts1成為60/(30Vp)秒。作為一例,若設多面鏡PM之基準之旋轉速度Vp為8000rpm,則時間間隔Ts1成為60/(30・8000)秒=250μS。In addition, if the reflection surface of the polygon mirror PM is 10 and the rotation speed is Vp (rpm), the frequency of each origin signal SZ1, SZ3, SZ5 becomes 10Vp/60 (Hz). Therefore, the time interval Ts1=Ts2=Ts3 is stable, and the time interval Ts1 becomes 60/(30Vp) seconds. As an example, if the reference rotational speed Vp of the polygon mirror PM is 8000 rpm, the time interval Ts1 becomes 60/(30·8000) seconds=250 μS.
如圖15般,描繪致能訊號SPP1, SPP3, SPP5之ON時間(H位準之持續時間)Toa雖為來自多面鏡PM之光束(雷射光)LB作為點光投射至基板FS上之期間(投射期間),但必須設定成較時間間隔Ts1短。因此,例如,若將ON時間Toa設定成200μS,則在此期間用以計數10000次之時脈訊號CLK之頻率成為10000/200=50(MHz)。與上述時脈訊號CLK同步,從圖案資料(位元圖上之「0」或「1」)產生之描繪線SLn所對應之描繪位元列資料或序列資料DLn(例如,10000位元)Sdw輸出至描繪用光學元件150。此外,如圖3般,在掃描單元U1, U3, U5之各個設有描繪用光學元件106之構成,對應描繪線SL1之描繪位元列資料Sdw或序列資料DL1傳送至掃描單元U1之描繪用光學元件106,對應描繪線SL3之描繪位元列資料Sdw或序列資料DL3傳送至掃描單元U3之描繪用光學元件106,對應描繪線SL5之描繪位元列資料Sdw或序列資料DL5傳送至掃描單元U5之描繪用光學元件106。As shown in Fig. 15, the ON time (duration of H level) of the enabling signals SPP1, SPP3, SPP5 is depicted as the period during which the light beam (laser light) LB from the polygon mirror PM is projected onto the substrate FS as spot light ( Projection period), but it must be set shorter than the time interval Ts1. Therefore, for example, if the ON time Toa is set to 200 μS, the frequency of the clock signal CLK used to count 10000 times during this period becomes 10000/200=50 (MHz). Synchronized with the above-mentioned clock signal CLK, the drawing bit row data or sequence data DLn (for example, 10000 bits) Sdw corresponding to the drawing line SLn generated from the pattern data ("0" or "1" on the bitmap) Output to the
在本第2實施形態,從三條描繪線Sl1, SL3, SL5之各個所對應之圖案資料產生之描繪位元列資料Sdw或序列資料DLn,與描繪致能訊號SPP1, SPP3, SPP5(或原點訊號SZ1, SZ3, SZ5)同步地依序供應至描繪用光學元件150之ON/OFF用。In the second embodiment, the drawing bit row data Sdw or the sequence data DLn generated from the pattern data corresponding to each of the three drawing lines Sl1, SL3, SL5, and the drawing enable signals SPP1, SPP3, SPP5 (or origin) The signals SZ1, SZ3, SZ5) are sequentially supplied to ON/OFF of the drawing
圖16係顯示產生上述描繪位元列資料Sdw之電路之一例,該電路具有產生電路(圖案資料產生電路)301, 303, 305與OR電路GT8。產生電路301具備記憶體部BM1、計數器部CN1、及閘部GT1,產生電路303具備記憶體部BM3、計數器部CN3、及閘部GT3,產生電路305具備記憶體部BM5、計數器部CN5、及閘部GT5。此產生電路301, 303, 305及OR電路GT8構成控制裝置18之一部分。FIG. 16 shows an example of a circuit for generating the above described bit row data Sdw, which has generating circuits (pattern data generating circuits) 301, 303, 305 and an OR circuit GT8. The generating
記憶體部BM1, BM3, BM5係一次儲存各掃描單元U1, U3, U5待描繪曝光之圖案所對應之位元圖資料(圖案資料)之記憶體。計數器部CN1, CN3, CN5,係將各記憶體部BM1, BM3, BM5內之位元圖資料(圖案資料)中接著待描繪之一個描繪之位元列(例如,10000位元)逐一位元地作為與時脈訊號CLK同步之序列資料DL1, DL3, DL5在描繪致能訊號SPP1, SPP3, SPP5為ON之期間中輸出之計數器。The memory parts BM1, BM3, and BM5 are memories that store bitmap data (pattern data) corresponding to the exposed patterns of the scanning units U1, U3, and U5 at a time. The counter parts CN1, CN3, CN5 are the bitmap data (pattern data) in each memory part BM1, BM3, BM5, followed by a bit row to be drawn (for example, 10,000 bits) bit by bit The ground is used as the counter for the serial data DL1, DL3, DL5 synchronized with the clock signal CLK during the period when the enabling signals SPP1, SPP3, SPP5 are drawn ON.
各記憶體部BM1, BM3, BM5內之圖資料係藉由未圖示之位址計數器等就一條描繪線分別偏移。此偏移,例如,若為記憶體部BM1,則在一條描繪線之序列資料DL1輸出結束後,接著成為主動之掃描單元U3之原點訊號SZ3產生之時序進行。同樣地,記憶體部BM3內之圖資料之偏移,在序列資料DL3輸出結束後,接著成為主動之掃描單元U5之原點訊號SZ5產生之時序進行,記憶體部BM5內之圖資料之偏移,在序列資料DL5輸出結束後,接著成為主動之掃描單元U1之原點訊號SZ1產生之時序進行。The drawing data in each memory part BM1, BM3, BM5 is offset by a drawing line by an unillustrated address counter or the like. This offset, for example, if it is the memory part BM1, after the output of the sequence data DL1 of a drawing line is completed, followed by the timing of generating the origin signal SZ3 of the active scanning unit U3. Similarly, the offset of the image data in the memory unit BM3 is performed after the timing data generated by the origin signal SZ5 of the active scanning unit U5 after the output of the sequence data DL3 ends, and the offset of the image data in the memory unit BM5 After the output of the sequence data DL5 is completed, the timing of generating the origin signal SZ1 of the active scanning unit U1 is followed.
以上述方式依序產生之各序列資料DL1, DL3, DL5,通過在描繪致能訊號SPP1, SPP3, SPP5之ON期間中開啟之閘部GT1, GT3, GT5施加至3輸入之OR電路GT8。OR電路GT8將序列資料DL1→DL3→DL5→DL1…之順序反覆合成之位元資料列作為描繪位元列資料Sdw輸出至描繪用光學元件150之ON/OFF用。此外,如圖3般,在掃描單元U1, U3, U5之各個設有描繪用光學元件106之構成,只要將從閘部GT1輸出之序列資料DL1傳送至掃描單元U1內之描繪用光學元件106,將從閘部GT3輸出之序列資料DL3傳送至掃描單元U3內之描繪用光學元件106,將從閘部GT5輸出之序列資料DL5傳送至掃描單元U5內之描繪用光學元件106即可。The sequence data DL1, DL3, DL5 sequentially generated in the above manner are applied to the 3-input OR circuit GT8 through the gates GT1, GT3, GT5 which are opened during the ON period of the drawing enable signals SPP1, SPP3, SPP5. The OR circuit GT8 repeatedly outputs the sequence of bit data of the sequence data DL1→DL3→DL5→DL1... as drawing bit row data Sdw to ON/OFF of the drawing
如上述,描繪用光學元件150(或106)之ON/OFF必須回應高速之時脈訊號CLK(例如,50MHz),但選擇用光學元件50, 58, 66只要與描繪致能訊號SPP1, SPP3, SPP5(或原點訊號SZ1, SZ3, SZ5)同步地進行ON/OFF即可,其回應頻率,在上述數值例之情形,時間間隔Toa(或Ts1)為200μs,因此為10KHz程度即可,可利用透射率高且低價者。此外,若設被時序測量部180內之計數器計數或被圖16中之計數器部CN1, CN3, CN5計數之時脈訊號CLK之頻率為Fcc、來自光源裝置14之光束LB之脈衝振盪之基本頻率為Fs,則設n為1以上(較佳為n≧2)之整數,設定成滿足n・Fcc=Fs之關係即可。As described above, the ON/OFF of the rendering optical element 150 (or 106) must respond to the high-speed clock signal CLK (for example, 50MHz), but the
以上,說明了使用圖13之光導入光學系40a與複數個掃描單元U1, U3, U5之動作、及使用圖14~圖16之各掃描單元U1, U3, U5之描繪時序等,但關於光導入光學系40b與複數個掃描單元U2, U4, U6亦相同。簡單說明,光束LB射入之掃描單元Un以例如掃描單元U2→掃描單元U4→掃描單元U6→掃描單元U2之順序切換。是以,控制裝置18,同樣地,以掃描單元U2之圖案資料→掃描單元U4之圖案資料→掃描單元U6之圖案資料→掃描單元U2之圖案資料之方式,依序切換決定傳送至光導入光學系40b之描繪用光學元件150之ON/OFF訊號之圖案資料。接著,控制裝置18根據依序切換之圖案資料控制光導入光學系40b之描繪用光學元件150。又,以圖16所示之電路構成產生三條描繪線之圖案資料合成之描繪位元列資料Sdw並傳送至描繪用光學元件150。藉此,各掃描單元U2, U4, U6可沿著描繪線SL2, SL4, SL6對基板FS照射強度已調變之光束LB,在基板FS上描繪以圖案資料為依據之圖案。The above has described the operation of using the light introduction
在上述第2實施形態,除了上述第1實施形態之效果外,可獲得以下效果。亦即,在光導入光學系40a內設置一個描繪用光學元件150,將該描繪用光學元件150配置在較初段之選擇用光學元件50靠光源裝置14a側,以一個描繪用光學元件150依據圖案調變從複數個掃描單元U1, U3, U5照射至基板FS之光束LB1, LB3, LB5之強度。同樣地,在光導入光學系40b內設置一個描繪用光學元件150,將該描繪用光學元件150配置在較初段之選擇用光學元件50靠光源裝置14b側,以一個描繪用光學元件150依據圖案調變從複數個掃描單元U2, U4, U6照射至基板FS之光束LB2, LB4, LB6之強度。藉此,可減少聲光調變元件之數,成本降低。In the above second embodiment, in addition to the effects of the above first embodiment, the following effects can be obtained. That is, a drawing
此外,在上述第2實施形態,以將光束LB分配成三條之描繪頭16進行說明,但如上述第1實施形態之變形例所說明,亦可為將光束LB分配成五條之描繪頭16(參照圖9及圖10)。又,圖9及圖10之情形,由於光源裝置14為一個,因此描繪用光學元件150亦為一個。In addition, in the second embodiment described above, the drawing
(第2實施形態之變形例)
上述第2實施形態亦可變形如下。在上述第2實施形態,作為描繪用光調變器,將描繪用光學元件150設在光導入光學系40a, 40b,但在本變形例,替代描繪用光學元件150,在光源裝置14(14a, 14b)內分別設置描繪用光調變器。此外,對與上述第2實施形態相同之構成賦予相同符號或省略圖示,僅說明不同部分。又,將在光源裝置14a, 14b設有描繪用光調變器之光源裝置分別稱為光源裝置14A, 14B,由於光源裝置14A與光源裝置14B具有相同構成,因此僅說明光源裝置14A。
(Modification of the second embodiment)
The second embodiment described above may be modified as follows. In the second embodiment described above, the
圖17係顯示本變形例之光源裝置(脈衝光源裝置、雷射光源裝置)14A之構成之圖。作為光纖雷射裝置之光源裝置14A具備DFB半導體雷射元件200、DFB半導體雷射元件202、偏光分束器204、作為描繪用光調變器之電氣光學元件206、此電氣光學元件206之驅動電路206a、偏光分束器208、吸收體210、激發光源212、結合器214、光纖光增幅器216、波長轉換光學元件218、波長轉換光學元件220、複數個透鏡元件GL、及包含時脈產生器222a之控制電路222。FIG. 17 is a diagram showing the configuration of a light source device (pulse light source device, laser light source device) 14A of this modification. The
DFB半導體雷射元件(第1固態雷射元件、第1半導體雷射光源)200以既定頻率(振盪頻率、基本頻率)Fs產生急劇升降(steep)或尖銳(sharp)之脈衝狀種光(雷射光)S1,DFB半導體雷射元件(第2固態雷射元件、第2半導體雷射光源)202以既定頻率Fs產生和緩(時間上寬廣)之脈衝狀種光(雷射光)S2。DFB半導體雷射元件200產生之種光S1之一個脈衝與DFB半導體雷射元件202產生之種光S2之一個脈衝,能量大致相同,但偏光狀態彼此不同,峰值強度為種光S1較強。在本變形例,以DFB半導體雷射元件200產生之種光S1之偏光狀態為S偏光、DFB半導體雷射元件202產生之種光S2之偏光狀態為P偏光進行說明。此DFB半導體雷射元件200, 202回應時脈產生器222a產生之時脈訊號LTC(既定頻率Fs),藉由控制電路222之電氣控制,控制成以振盪頻率Fs產生種光S1, S2。此控制電路222被控制裝置18控制。The DFB semiconductor laser element (the first solid-state laser element and the first semiconductor laser light source) 200 generates pulsed seed light (laser) that sharply rises or sharps at a predetermined frequency (oscillation frequency, fundamental frequency) Fs (Light beam) S1, the DFB semiconductor laser element (second solid-state laser element, second semiconductor laser light source) 202 generates pulsed seed light (laser light) S2 that is gentle (wide in time) at a predetermined frequency Fs. One pulse of the seed light S1 generated by the DFB
此外,此時脈訊號LTC成為供應至圖16所示之計數器部CN1, CN3, CN5之各個之時脈訊號CLK之基頻,因此將時脈訊號LTC進行n分頻(n較佳為2以上之整數)者為時脈訊號CLK。又,時脈產生器222a亦具有對時脈訊號LTC之基本頻率Fs進行±ΔF之調整之功能、亦即微調光束LB之脈衝振盪之時間間隔之功能。藉此,例如,即使點光SP之掃描速度Vs稍微變動,藉由微調基本頻率Fs,亦可精密地保持在描繪線描繪之圖案之尺寸(描繪倍率)。In addition, at this time, the pulse signal LTC becomes the base frequency of the clock signal CLK supplied to the counter parts CN1, CN3, CN5 shown in FIG. 16, so the clock signal LTC is divided by n (n is preferably 2 or more Integer) is the clock signal CLK. Moreover, the
偏光分束器204使S偏光之光透射過,反射P偏光之光,將DFB半導體雷射元件200產生之種光S1與DFB半導體雷射元件202產生之種光S2導至電氣光學元件206。詳細而言,偏光分束器204使DFB半導體雷射元件200產生之S偏光之種光S1透射過,將種光S1導至電氣光學元件206,反射DFB半導體雷射元件202產生之P偏光之種光S2,將種光S2導至電氣光學元件206。DFB半導體雷射元件200, 202及偏光分束器204構成產生種光S1, S2之雷射光源部(光源部)205。The
電氣光學元件206對種光S1, S2具有透射性,例如,使用光電調變器(EOM:Electro-Optic Modulator)。EOM回應上述圖16所示之描繪位元列資料Sdw(或序列資料DLn)之ON/OFF狀態(高/低),藉由驅動電路206a換通過偏光分束器204而來之種光S1, S2之偏光狀態。來自DFB半導體雷射元件200、DFB半導體雷射元件202之各個之種光S1, S2之波長域為800nm以上之長,因此作為電氣光學元件206,可使用偏光狀態之切換回應性為GHz程度者。The electro-
輸入至驅動電路206a之描繪位元列資料Sdw(或序列資料DLn)之1位元之像素資料為OFF狀態(低、「0」)時,電氣光學元件206不改變射入之種光S1或S2之偏光狀態,直接導至偏光分束器208。另一方面,輸入至驅動電路206a之描繪位元列資料Sdw(或序列資料DLn)為ON狀態(高、「1」)時,電氣光學元件206改變射入之種光S1或S2之偏光狀態(使偏光方向改變90度),導至偏光分束器208。如上述,藉由驅動電氣光學元件206,電氣光學元件206,在描繪位元列資料Sdw(或序列資料DLn)之像素資料為ON狀態(高)時,將S偏光之種光S1轉換成P偏光之種光S1,將P偏光之種光S2轉換成S偏光之種光S2。When the 1-bit pixel data of the drawing bit row data Sdw (or sequence data DLn) input to the
偏光分束器208使P偏光之光透射過,透過透鏡元件GL導至結合器214,使S偏光之光反射,導至吸收體210。激發光源212產生激發光,該產生之激發光係透過光纖212a導至結合器214。結合器214將從偏光分束器208照射之種光與激發光合成,輸出至光纖光增幅器(光增幅器)216。光纖光增幅器216摻雜有激發光所激發之雷射介質。是以,在合成之種光及激發光傳送之光纖光增幅器216內,藉由激發光激發雷射介質而使種光增幅。作為在光纖光增幅器216內摻雜之雷射介質,使用鉺(Er)、鐿(Yb)、銩(Tm)等稀土元素。此增幅之種光,從光纖光增幅器216之射出端216a以既定發散角放射,被透鏡元件GL收斂或被準直化後射入波長轉換光學元件218。The
波長轉換光學元件(第1波長轉換光學元件)218,藉由第2諧波產生(Second Harmonic Generation(SHG)),將射入之種光(波長λ)轉換成波長為λ之1/2之第2諧波。作為波長轉換光學元件218,可較佳地使用擬似相位匹配(Quasi Phase Matching:QPM)結晶即PPLN(Periodically Poled LiNbO 3)結晶。此外,亦可使用PPLT(Periodically Poled LiTaO 3)結晶等。 The wavelength conversion optical element (first wavelength conversion optical element) 218, by the second harmonic generation (Second Harmonic Generation (SHG)), converts the incident seed light (wavelength λ) into a wavelength of 1/2 of λ 2nd harmonic. As the wavelength conversion optical element 218, a pseudo phase matching (Quasi Phase Matching: QPM) crystal, that is, a PPLN (Periodically Poled LiNbO 3 ) crystal can be preferably used. In addition, PPLT (Periodically Poled LiTaO 3 ) crystals or the like can also be used.
波長轉換光學元件(第2波長轉換光學元件)220,藉由波長轉換光學元件218轉換之第2諧波(波長λ/2)與未被波長轉換光學元件218轉換而殘留之種光(波長λ)之和頻產生(Sum Frequency Generation:SFG),產生波長為λ之1/3之第3諧波。此第3諧波成為在370nm以下之波長帶域具有峰值波長之紫外線光(光束LB)。The wavelength conversion optical element (second wavelength conversion optical element) 220, the second harmonic (wavelength λ/2) converted by the wavelength conversion optical element 218 and the seed light (wavelength λ) that is not converted by the wavelength conversion optical element 218 ) Sum Frequency Generation (SFG) generates the third harmonic with a wavelength of 1/3 of λ. This third harmonic becomes ultraviolet light (beam LB) having a peak wavelength in the wavelength band below 370 nm.
如上述,將從圖16所示之圖案資料產生電路送出之描繪位元列資料Sdw(或DLn)施加至圖17之電氣光學元件206之構成之情形,描繪位元列資料Sdw(或DLn)之1位元之像素資料為OFF狀態(低、「0」)時,電氣光學元件206不改變射入之種光S1或S2之偏光狀態,直接導至偏光分束器208。因此,透射過偏光分束器208之種光成為來自DFB半導體雷射元件202之種光S2。是以,從光源裝置14A最終輸出之光束LB具有與來自DFB半導體雷射元件202之種光S2相同之振盪輪廓(時間特性)。亦即,此情形,光束LB成為脈衝之峰值強度低且時間上寬廣之鈍特性。光纖光增幅器216,由於對如上述峰值強度低之種光S2之增幅效率低,因此從光源裝置14A輸出之光束LB成為未增幅至曝光所需能量之光。是以,此情形,從曝光之觀點觀之,實質上與光源裝置14A未射出光束LB為相同結果。亦即,照射至基板FS之點光SP之強度成為低位準。然而,在未沿著各描繪線SLn(SL1~SL6)進行圖案描繪之期間(非投射期間、非曝光期間),即使來自種光S2之紫外線之光束LB為些微強度亦持續放射,因此描繪線SLn(SL1~SL6)長時間位於基板FS上之相同位置之狀態之情形(例如,因搬送系故障造成基板FS緊急停止等)產生時,只要在光源裝置14A之光束LB之射出窗設置可動光閘,關閉射出窗即可。As described above, when drawing bit row data Sdw (or DLn) sent from the pattern data generating circuit shown in FIG. 16 is applied to the configuration of the electro-
另一方面,施加至圖17之電氣光學元件206之描繪位元列資料Sdw(或DLn)之1位元之像素資料為ON狀態(高、「1」)時,電氣光學元件206改變射入之種光S1或S2之偏光狀態,導至偏光分束器208。因此,透射過偏光分束器208之種光成為來自DFB半導體雷射元件200之種光S1。是以,從光源裝置14A最終輸出之光束LB係由來自DFB半導體雷射元件200之種光S1產生。由於來自DFB半導體雷射元件200之種光S1之峰值強度強,因此被光纖光增幅器216有效率地增幅,從光源裝置14A輸出之光束LB具有基板FS之曝光所需之能量。亦即,照射至基板FS之點光SP之強度成為高位準。On the other hand, when the 1-bit pixel data applied to the drawing bit row data Sdw (or DLn) of the electro-
如上述,由於在光源裝置14A內設有作為描繪用光調變器之電氣光學元件206,因此與在上述第2實施形態控制描繪用光學元件150相同,藉由控制電氣光學元件206,可獲得與上述第2實施形態相同之效果。亦即,根據光束LB射入之掃描單元Un之圖案資料(或者圖15、圖16中之描繪位元列資料Sdw)將電氣光學元件206切換(驅動)成ON/OFF,藉此可依據待描繪圖案調變射入初段之選擇用光學元件50之光束LB之強度、亦即藉由各掃描單元Un(U1~U6)照射至基板FS上之光束LB之點光SP之強度。As described above, since the electro-
此外,在圖17之構成,省略DFB半導體雷射元件202及偏光分束器204,僅將來自DFB半導體雷射元件200之種光S1藉由以圖案資料(描繪資料)為依據之電氣光學元件206之切換,破裂波狀地導至光纖光增幅器216,此亦被考慮。然而,若採用此構成,則種光S1對光纖光增幅器216之入射週期性依據待描繪圖案大幅紊亂。亦即,在來自DFB半導體雷射元件200之種光S1不射入光纖光增幅器216之狀態持續後,若種光S1射入光纖光增幅器216,則入射後一刻之種光S1較一般時被較大增幅率增幅,會有從光纖光增幅器216產生具有規定以上之較大強度之光束之問題。因此,在本變形例,作為較佳形態,在種光S1不射入光纖光增幅器216之期間,使來自DFB半導體雷射元件202之種光S2(峰值強度低之寬廣脈衝光)射入光纖光增幅器216,藉此解決上述問題。In addition, in the configuration of FIG. 17, the DFB
又,雖切換電氣光學元件206,但亦可根據圖案資料(描繪位元列資料Sdw或序列資料DLn),驅動DFB半導體雷射元件200, 202。亦即,控制電路222根據圖案資料(描繪位元列資料Sdw或DLn),控制DFB半導體雷射元件200, 202,選擇性地(擇一地)產生以既定頻率Fs脈衝狀振盪之種光S1, S2。此情形,不需要偏光分束器204, 208、電氣光學元件206、及吸收體210,從DFB半導體雷射元件200, 202之任一者選擇性地脈衝振盪之種光S1, S2之一者直接射入結合器214。此時,控制電路222,以來自DFB半導體雷射元件200之種光S1與來自DFB半導體雷射元件202之種光S2不會同時射入光纖光增幅器216之方式,控制各DFB半導體雷射元件200, 202之驅動。亦即,對基板FS照射各光束LBn之點光SP之情形,以僅種光S1射入光纖光增幅器216之方式控制DFB半導體雷射元件200。又,不對基板FS照射光束LBn之點光SP(點光SP之強度極低)之情形,以僅種光S2射入光纖光增幅器216之方式控制DFB半導體雷射元件202。如上述,是否對基板FS照射光束LBn係根據圖案資料(描繪位元列資料Sdw之H或L)之像素資料(高/低)決定。又,此情形之種光S1, S2之偏向狀態亦可皆為P偏向。Furthermore, although the electro-
如上述,在本變形例,可減少聲光調變元件之數,成本變低。As described above, in this modification, the number of acousto-optic modulation elements can be reduced, and the cost is reduced.
此外,亦可將本變形例1之光源裝置14A, 14B使用在上述第1實施形態之光源裝置14a, 14b。此情形,亦可根據圖案資料(描繪位元列資料Sdw)控制從光源裝置14A, 14B輸出之來自DFB半導體雷射元件200之種光S1之輸出時序、及各掃描單元U1~U6之描繪用光學元件106之切換。In addition, the
(第3實施形態)
接著,參照圖18說明第3實施形態,但在第3實施形態,以使用在第2實施形態之變形例說明之光源裝置14A(參照圖17), 14B為前提。然而,為了適於第3實施形態,圖17之光源裝置14A之控制電路222內之時脈產生器222a具備依據來自圖18所示之描繪控制用之控制單元(控制電路500)之倍率修正資訊CMg使時脈訊號LTC之時間間隔部分地(離散地)伸縮之功能。同樣地,光源裝置14B之控制電路222內之時脈產生器222a亦具備依據倍率修正資訊CMg使時脈訊號LTC之時間間隔部分地(離散地)伸縮之功能。此外,光源裝置14B、光導入光學系40b、及掃描單元U2, U4, U6之動作與光源裝置14A、光導入光學系40a、及掃描單元U1, U3, U5之動作相同,因此關於光源裝置14B、光導入光學系40b、及掃描單元U2, U4, U6之動作,省略說明。又,對與上述第2實施形態之變形例相同之構成賦予相同符號或省略圖示,僅說明不同部分。
(Third Embodiment)
Next, the third embodiment will be described with reference to FIG. 18. However, in the third embodiment, it is assumed that the
圖18中,來自一個光源裝置14A之光束(雷射光)LB,與上述圖12、圖13之構成相同,透過選擇用光學元件50, 58, 66分別供應至三個掃描單元U1, U3, U5。選擇用光學元件50, 58, 66之各個回應圖14、圖15所說明之描繪致能(ON)訊號SPP1, SPP3, SPP5擇一地使光束LB偏向(切換),將光束LB導至掃描單元U1, U3, U5之任一個。此外,如上述說明,在未沿著各描繪線進行圖案描繪之期間(非投射期間),即使來自種光S2之紫外線之光束LB為些微強度亦持續放射,因此考慮各描繪線長時間照射至基板FS上之相同位置之狀況產生之情形,在光源裝置14A之光束LB之射出窗設置可動光閘SST。In FIG. 18, the light beam (laser light) LB from one
如圖14所示,來自各掃描單元U1, U3, U5之原點感測器OP1, OP3, OP5之原點訊號SZ1, SZ3, SZ5供應至產生各掃描單元U1, U3, U5之圖案資料之產生電路(圖案資料產生電路)301, 303, 305。產生電路301包含圖16中之閘部GT1、記憶體部BM1、計數器部CN1等,計數器部CN1對以從光源裝置14A之控制電路222(時脈產生器222a)輸出之時脈訊號LTC為基頻製作之時脈訊號CLK1進行計數。As shown in FIG. 14, the origin signals SZ1, SZ3, SZ5 from the origin sensors OP1, OP3, OP5 of each scanning unit U1, U3, U5 are supplied to generate the pattern data of each scanning unit U1, U3, U5 Generating circuits (pattern data generating circuits) 301, 303, 305. The generating
同樣地,產生電路303包含圖16中之閘部GT3、記憶體部BM3、計數器部CN3等,計數器部CN3對以時脈訊號LTC為基頻製作之時脈訊號CLK3進行計數,產生電路305包含圖16中之閘部GT5、記憶體部BM5、計數器部CN5等,計數器部CN5對以時脈訊號LTC為基頻製作之時脈訊號CLK5進行計數。Similarly, the generating
此等時脈訊號CLK1, CLK3, CLK5係藉由具有各產生電路301, 303, 305與光源裝置14A間之介面之功能之控制電路500將時脈訊號LTC分頻成1/n(n為2以上之整數)而製作。此時脈訊號CLK1, CLK3, CLK5對各計數器部CN1, CN3, CN5之供應,回應描繪致能(ON)訊號SPP1, SPP3, SPP5(參照圖15),限制在任一個。亦即,描繪致能訊號SPP1為ON(高)時,僅時脈訊號LTC分頻成1/n之時脈訊號CLK1供應至計數器部CN1,描繪致能訊號SPP3為ON(高)時,僅時脈訊號LTC分頻成1/n之時脈訊號CLK3供應至計數器部CN3,描繪致能訊號SPP5為ON(高)時,僅時脈訊號LTC分頻成1/n之時脈訊號CLK5供應至計數器部CN5。The clock signals CLK1, CLK3, CLK5 are divided into 1/n (n is 2) by the
藉此,從各產生電路301, 303, 305之各個依序輸出之序列資料DL1, DL3, DL5分別透過閘部GT1, GT3, GT5被設在控制電路500內之3輸入之OP電路GT8(參照圖16)加算,成為描繪位元列資料Sdw供應至光源裝置14A內之電氣光學元件206。此外,產生電路301, 303, 305及控制電路500構成控制裝置18之一部分。By this, the sequence data DL1, DL3, DL5 sequentially output from each of the generating
以上構成基本上與使用圖17說明之光源裝置14A之利用法相同,但在本實施形態,設置將三個掃描單元U1, U3, U5之各個之描繪線(掃描線)SL1, SL3, SL5所描繪之圖案之點掃描方向(Y方向)之描繪倍率個別地微調之功能。由於此功能,在本實施形態,就掃描單元U1, U3, U5設置暫時儲存關於描繪倍率之修正量之資訊mg1, mg3, mg5之記憶體部BM1a, BM3a, BM5a。此記憶體部BM1a, BM3a, BM5a,在圖18中雖圖示為獨立設置,但亦可為設在產生電路301, 303, 305之各個之記憶體部BM1, BM3, BM5之一部分。關於此修正量之資訊mg1, mg3, mg5亦構成掃描資訊之一部分。The above configuration is basically the same as the use method of the
關於修正量之資訊mg1, mg3, mg5,例如,對應使各描繪線SL1, SL3, SL5所描繪之圖案之Y方向之尺寸以多少比率伸縮之比率(ppm)。作為一例,設各描繪線SL1, SL3, SL5可描繪之Y方向之區域之長度為30mm之情形,欲使其伸縮±200ppm(相當於±6μm)時,在資訊mg1, mg3, mg5設定±200之數值。此外,資訊mg1, mg3, mg5非以比率而是以直接之伸縮量(±ρμm)設定亦可。又,資訊mg1, mg3, mg5亦可就沿著描繪線SL1, SL3, SL5之各個之一條線之圖案資料(序列資料DLn)逐次重新設定,亦可就複數條線之圖案資料(序列資料DLn)之送出重新設定。如上述,在本實施形態,在一邊將基板FS往X方向(長邊方向)傳送一邊沿著描繪線SL1, SL3, SL5之各個進行圖案描繪之期間,可動態地改變Y方向之描繪倍率,在得知基板FS變形或面內不整之情形,可抑制其因於此之描繪位置精度之劣化。再者,在重疊曝光時,可對應已形成之底層圖案之變形大幅地提升重疊精度。The information about the correction amount mg1, mg3, mg5, for example, corresponds to the ratio (ppm) at which the dimension of the pattern drawn by each drawing line SL1, SL3, SL5 expands and contracts in the Y direction. As an example, if the length of the Y-direction area that can be drawn by each drawing line SL1, SL3, SL5 is 30mm, if you want to expand or contract ±200ppm (equivalent to ±6μm), set ±200 in the information mg1, mg3, mg5 Of the value. In addition, the information mg1, mg3, mg5 can be set not by the ratio but by the direct expansion and contraction amount (±ρμm). Also, the information mg1, mg3, mg5 can be reset one by one for the pattern data (sequence data DLn) of one of the lines along the drawing lines SL1, SL3, SL5, or for the pattern data of multiple lines (sequence data DLn) ) To send to reset. As described above, in this embodiment, while the substrate FS is transferred in the X direction (longitudinal direction) while pattern drawing is performed along each of the drawing lines SL1, SL3, SL5, the drawing magnification in the Y direction can be dynamically changed, When it is known that the substrate FS is deformed or in-plane uneven, the deterioration of the accuracy of the drawing position due to this can be suppressed. Furthermore, during overlay exposure, the overlay accuracy can be greatly improved in response to the deformation of the formed underlying pattern.
圖19係顯示圖18所示之描繪裝置中代表地在掃描單元U1進行標準圖案描繪時之各部之訊號狀態與光束LB之振盪狀態之時間圖。圖19中,二維之矩陣Gm表示待描繪圖案資料之位元圖案PP,在基板FS上之一個格子(一個像素(pixel)單位)設定成例如Y方向之尺寸Py為3μm、X方向之尺寸Px為3μm。又,圖19中,以箭頭所示之SL1-1, SL1-2, SL1-3, …SL1-6表示伴隨著基板FS在X方向之移動(長邊方向之副掃描)被描繪線SL1依序描繪之描繪線,以各描繪線SL1-1, SL1-2, SL1-3, …SL1-6在X方向之間隔成為例如一個像素單位之尺寸Px(3μm)之1/2之方式,設定基板FS之搬送速度。FIG. 19 is a time chart showing the signal state of each part and the oscillation state of the light beam LB when the scanning unit U1 representatively draws a standard pattern in the drawing device shown in FIG. 18. In FIG. 19, the two-dimensional matrix Gm represents the bit pattern PP of the pattern data to be drawn, and a grid (a pixel (pixel) unit) on the substrate FS is set to, for example, a dimension Py of 3 μm in the Y direction and a dimension in the X direction Px is 3 μm. In addition, in FIG. 19, SL1-1, SL1-2, SL1-3, ... SL1-6 indicated by arrows indicate that the line SL1 is drawn along with the movement of the substrate FS in the X direction (sub-scanning in the longitudinal direction) The drawing lines drawn sequentially are set in such a way that the spacing of the drawing lines SL1-1, SL1-2, SL1-3, ... SL1-6 in the X direction becomes, for example, 1/2 of the size Px (3 μm) of one pixel unit Transfer speed of substrate FS.
再者,投射至基板FS上之點光SP在XY方向之尺寸(點光尺寸ø)與一個像素單位相同程度或者稍微大於一個像素單位。因此,點光尺寸ø,作為實效之直徑(高斯分布之1/e
2之寬,或峰值強度之半值全寬)係設定成3~4μm程度,沿著描繪線SL1連續地投射點光SP時,以例如以點光SP之實效之直徑之1/2重疊之方式設定光束LB之振盪頻率Fs(脈衝時間間隔)與多面鏡PM進行之點光SP之掃描速度Vs。亦即,若設從圖17所示之光源裝置14A內之偏光分束器208射出之種光為光束Lse(圖18),則此種光Lse回應從控制電路222(時脈產生器222a)射出之時脈訊號LTC之各時脈脈衝,如圖19般射出。
Furthermore, the size of the spot light SP projected on the substrate FS in the XY direction (spot light size ø) is the same as a pixel unit or slightly larger than a pixel unit. Therefore, the spot light size ø, which is the effective diameter (the width of 1/e 2 of the Gaussian distribution, or the full width at half maximum of the peak intensity) is set to about 3 to 4 μm, and the spot light SP is continuously projected along the drawing line SL1 At this time, the oscillation frequency Fs (pulse time interval) of the light beam LB and the scanning speed Vs of the spot light SP by the polygon mirror PM are set such that, for example, the 1/2 of the effective diameter of the spot light SP overlaps. That is, if the light emitted from the
其時脈訊號LTC與供應至圖18中之產生電路301內之計數器部CN1之時脈訊號CLK1係設定成1:2之頻率比,時脈訊號LTC為100MHz之情形,藉由圖18中之控制電路500之1/2分頻器將時脈訊號CLK1設定成50MHz。此外,時脈訊號LTC與時脈訊號CLK1之頻率比只要為整數倍即可,例如亦可設定成使時脈訊號CLK1之設定頻率降為1/4之25MHz,且使點光SP之掃描速度Vs降為一半。The clock signal LTC and the clock signal CLK1 supplied to the counter part CN1 in the
圖19所示之描繪位元列資料Sdw相當於從產生電路301輸出之序列資料DL1,此處,例如對應圖案PP之描繪線SL1-2上之圖案。光源裝置14A內之電氣光學元件206回應描繪位元列資料Sdw切換偏光狀態,因此種光Lse,在描繪位元列資料Sdw為ON狀態(高、「1」)之期間,藉由來自圖17中之DFB半導體雷射元件200之種光S1產生,在描繪位元列資料Sdw為OFF狀態(低、「0」)之期間,藉由來自圖17中之DFB半導體雷射元件202之種光S2產生。以上之圖19所示之掃描單元U1之描繪曝光之動作,在其他掃描單元U2~U6亦相同。The drawing bit row data Sdw shown in FIG. 19 corresponds to the sequence data DL1 output from the generating
此外,在光源裝置14A內之控制電路222內設有在描繪位元列資料Sdw為ON狀態(高、「1」)之期間,回應時脈訊號LTC從DFB半導體雷射元件200產生種光S1(急劇升降之脈衝光),在描繪位元列資料Sdw為OFF狀態(低、「0」)之期間,回應時脈訊號LTC從DFB半導體雷射元件202產生種光S2(寬廣之脈衝光)之驅動電路之情形,可省略圖17、圖18中所示之電氣光學元件206、圖17中所示之偏光分束器208、吸收體210。In addition, the
如上述,種光Lse之各脈衝光係回應圖17所示之時脈產生器222a產生之時脈訊號LTC之各時脈脈衝而輸出,因此在本實施形態,在時脈產生器222a內設置用以部分地增減時脈訊號LTC之脈衝間之時間(週期)之電路構成。在該電路構成設有作為時脈訊號LTC之來源之基準(標準)時脈產生器、分頻計數器電路、及可變延遲電路等。As described above, each pulse light of the seed light Lse is output in response to each clock pulse of the clock signal LTC generated by the
圖20係顯示來自時脈產生器222a內之基準時脈產生器之基準時脈訊號TC0與時脈訊號LTC之關係之時間表,顯示以圖17、圖18中所示之倍率修正資訊CMg為依據之修正未進行之狀態。時脈產生器222a內之可變延遲電路,使恆以一定頻率Fs(一定時間Td0)產生之基準時脈訊號TC0延遲對應預設定值之時間DT0後輸出為時脈訊號LTC。是以,例如,若基準時脈訊號TC0為100MHz(Td0=10ns),則在預設定值(延遲時間DT0)不產生變化之情況下,亦以100MHz(Td0=10ns)持續產生時脈訊號LTC。FIG. 20 is a time chart showing the relationship between the reference clock signal TC0 and the clock signal LTC from the reference clock generator in the
因此,藉由時脈產生器222a內之分頻計數器電路,對基準時脈訊號TC0進行計數,若該計數值達到既定值Nv,則使設定在可變延遲電路之預設定值變化一定量。藉由圖21之時間表說明該狀況。圖21中,基準時脈訊號TC0藉由分頻計數器電路計數至Nv為止,設定在可變延遲電路之預設定值為延遲時間DT0。之後,藉由基準時脈訊號TC0之一個時脈脈衝Kn,分頻計數器電路計數至Nv為止,則設定在可變延遲電路之預設定值立刻變更為延遲時間DT1。是以,根據基準時脈訊號TC0之時脈脈衝Kn之次一個產生之時脈脈衝Kn+1以後之時脈脈衝產生之時脈訊號LTC之各時脈脈衝(K’n+1以後),一律以延遲時間DT1產生。Therefore, the reference clock signal TC0 is counted by the frequency division counter circuit in the
藉此,僅在使設定在可變延遲電路之預設定值變化一定量時、亦即,時脈訊號LTC之時脈脈衝K’n與時脈脈衝K’n+1之間變化時間間隔Td1,之後之時脈訊號LTC之時脈脈衝之時間間隔成為Td0。圖21中,雖使延遲時間DT1增加較延遲時間DT0多,使時脈訊號LTC之二個時脈脈衝間之時間增加較Td0多,但同樣地亦可減少。此外,若分頻計數器電路對基準時脈訊號TC0計數至Nv,則歸零,再次開始至Nv為止之計數。Thereby, only when the preset value set in the variable delay circuit is changed by a certain amount, that is, the time interval between the clock pulse K'n and the clock pulse K'n+1 of the clock signal LTC is changed Td1, the time interval of the clock pulse of the subsequent clock signal LTC becomes Td0. In FIG. 21, although the delay time DT1 is increased more than the delay time DT0, and the time between two clock pulses of the clock signal LTC is increased more than Td0, it can also be reduced in the same way. In addition, if the frequency-dividing counter circuit counts the reference clock signal TC0 to Nv, it returns to zero and starts counting up to Nv again.
若設設定在可變延遲電路之預設定值之初始值為延遲時間DT0、延遲時間之變化量為±ΔDh、分頻計數器電路歸零之次數為Nz、每當分頻計數器電路計數至Nv時(每當歸零時)依序設定在可變延遲電路之預設定值之延遲時間為DTm,則延遲時間DTm設定成DTm=DT0+Nz・(±ΔDh)之關係。是以,如圖21般,歸零之次數Nz設定成1(m=1)之期間之延遲時間DT1成為DTm=DT1=DT0±ΔDh,下一次歸零(Nz=2、m=2)產生後設定之延遲時間DT2成為DTm=DT2=DT0+2・(±ΔDh)。是以,延遲時間之變化量±ΔDh對應與時脈訊號LTC之時脈脈衝K’n與時脈脈衝K’n+1之間之時間Td1之基準時間Td0之差分。If the initial value of the preset value set in the variable delay circuit is the delay time DT0, the amount of change in the delay time is ±ΔDh, the number of times the divider counter circuit returns to zero is Nz, and whenever the divider counter circuit counts to Nv When the time (when reset to zero) is set in sequence to the delay time of the preset value of the variable delay circuit as DTm, the delay time DTm is set to the relationship of DTm=DT0+Nz·(±ΔDh). Therefore, as shown in FIG. 21, the delay time DT1 during the period when the number of zeroings Nz is set to 1 (m=1) becomes DTm=DT1=DT0±ΔDh, and the next zeroing (Nz=2, m=2) occurs The delay time DT2 set afterward becomes DTm=DT2=DT0+2·(±ΔDh). Therefore, the change amount of the delay time ±ΔDh corresponds to the difference between the reference time Td0 of the time Td1 between the clock pulse K'n and the clock pulse K'n+1 of the clock signal LTC.
如上述,在時脈訊號LTC之特定二個時脈脈衝間使時間間隔變化之動作,係依據設定在分頻計數器電路之既定值Nv,在一條描繪線(SL1~SL6)之全長中複數個部位離散地實施。圖22係顯示該狀況。圖22係在描繪線SL1之全長將每當分頻計數器電路之計數值達到既定值Nv時歸零之複數個位置表示為修正點CPP者。在該修正點CPP之各個,僅時脈訊號LTC之特定二個時脈脈衝間相對於時間Td0伸縮時間±ΔDh。As described above, the action of changing the time interval between specific two clock pulses of the clock signal LTC is based on the predetermined value Nv set in the frequency divider counter circuit, and a plurality of within the total length of a drawing line (SL1~SL6) The parts are implemented discretely. Figure 22 shows this situation. FIG. 22 shows the plurality of positions where the count value of the frequency division counter circuit returns to zero every time the count value of the frequency divider counter circuit reaches the predetermined value Nv as the correction point CPP. At each of the correction points CPP, only the specific two clock pulses of the clock signal LTC expand and contract with respect to the time Td0 by the time ±ΔDh.
因此,若設基準時脈訊號TC0為100MHz(Td0=10ns)、點光SP之主掃描方向之實效之尺寸為3μm、描繪線SL1(SL2~SL6亦相同)之長度為30mm、藉由光束LB之二個連續脈衝光投射至基板FS之點光SP在主掃描方向重疊一半程度(1.5μm)描繪,則在描繪線L1之長度產生之基準時脈訊號TC0之時脈數成為20000個。又,延遲時間之變化量ΔDh相對於基準之時間間隔Td0非常小,例如設定在2%程度。在此條件下,使沿著描繪線SL1描繪之圖案在主掃描方向(Y方向)伸縮150ppm之情形,描繪線L1之長度30mm之150pm相當於4.5μm。關於此等描繪倍率之比率150ppm或者實際尺寸長度4.5μm之資訊係作為資訊mg1儲存在圖18中之記憶體部BM1a。Therefore, if the reference clock signal TC0 is 100 MHz (Td0=10ns), the effective size of the spot light SP in the main scanning direction is 3 μm, the length of the drawing line SL1 (the same for SL2 to SL6) is 30 mm, and the light beam LB The second continuous pulse light is projected on the substrate FS by the point light SP overlapping by half (1.5 μm) in the main scanning direction, and the number of reference clock signals TC0 generated by the length of the drawing line L1 becomes 20000. In addition, the change amount ΔDh of the delay time is very small with respect to the reference time interval Td0, and is set to, for example, about 2%. Under this condition, when the pattern drawn along the drawing line SL1 is expanded and contracted by 150 ppm in the main scanning direction (Y direction), the length of the drawing line L1 of 30 mm to 150 pm corresponds to 4.5 μm. The information about these drawing magnification ratios of 150 ppm or the actual size length of 4.5 μm is stored as information mg1 in the memory portion BM1a in FIG. 18.
是以,時脈訊號LTC之20000個時脈脈衝列中相對於時間Td0伸縮時間ΔDh之修正點CPP(圖22)之個數成為4.5μm/(1.5μm×2%)=150,設定在圖22所示之分頻計數器電路之最大既定值Nv,藉由20000/150成為約133。Therefore, the number of correction points CPP (Figure 22) in the 20000 clock pulse trains of the clock signal LTC with respect to the time Td0 stretching time ΔDh becomes 4.5μm/(1.5μm×2%)=150, set in the figure The maximum predetermined value Nv of the frequency division counter circuit shown in 22 becomes approximately 133 by 20000/150.
又,設延遲時間之變化量ΔDh為5%之情形,修正點CPP之個數成為4.5μm/(1.5μm×5%)=60,設定在分頻計數器電路之最大既定值Nv,藉由20000/60成為約333。如上述,由於延遲時間之變化量ΔDh10%未滿之小,因此即使在該修正點CPP存在待描繪圖案之情形,該圖案之尺寸大於點光SP之尺寸,因此可忽視在該修正點CPP之點光SP在主掃描方向之些微位置偏移造成之描繪誤差。In addition, when the change amount of the delay time ΔDh is 5%, the number of correction points CPP becomes 4.5 μm/(1.5 μm×5%)=60, which is set at the maximum predetermined value Nv of the frequency division counter circuit, by 20000 /60 becomes about 333. As described above, since the change amount of the delay time ΔDh is less than 10%, even if there is a pattern to be drawn at the correction point CPP, the size of the pattern is larger than the size of the spot light SP, so it can be ignored at the correction point CPP A drawing error caused by a slight position shift of the spot light SP in the main scanning direction.
上述延遲時間之變化量ΔDh、修正點CPP之個數、分頻計數器電路進行之既定值Nv之設定等,係根據從圖18之控制電路500輸出之倍率修正資訊CMg(ppm)在圖17所示之控制電路222內運算,設定在時脈產生器222a內之分頻計數器電路或可變延遲電路等。The change amount ΔDh of the above delay time, the number of correction points CPP, the setting of the predetermined value Nv by the frequency division counter circuit, etc. are based on the magnification correction information CMg (ppm) output from the
根據上述實施形態,來自光源裝置14A之光束LB能以分時方式依序供應至例如三個掃描單元U1, U3, U5之各個,能序列地個別地進行沿著各掃描單元U1, U3, U5之描繪線SL1, SL3, SL5之描繪動作,因此如圖18所示,可就掃描單元U1, U3, U5設定關於描繪倍率之修正量之資訊mg1, mg3, mg5。藉此,基板FS在Y方向之伸縮量不同,即使在Y方向分割之某些區域之伸縮率分別不同,亦可對應地將最佳描繪倍率之修正量設定在各掃描單元Un,可獲得亦可對應基板FS之非線性變形之優點。According to the above-described embodiment, the light beam LB from the
以上,在連接於使聚光在被照射體(基板FS)上之點光SP掃描以描繪圖案之裝置且射出成為點光SP之光束(雷射光)LB之光源裝置14A,如圖17,圖18所示,設有:第1半導體雷射光源(200),回應既定週期(Td0)之時脈脈衝(時脈訊號LTC),產生發光時間較既定週期短且峰值強度大之急劇升降之第1脈衝光(種光S1);第2半導體雷射光源(202),回應時脈脈衝,產生發光時間較既定週期短且較第1脈衝光(種光S1)之發光時間長、峰值強度小之寬廣之第2脈衝光(種光S2);光纖光增幅器(216),供第1脈衝光(種光S1)或第2脈衝光(種光S2)射入;以及切換裝置,根據待描繪圖案資訊(描繪位元列資料Sdw)之輸入,以在點光往被照射體上投射之描繪時使第1脈衝光(種光S1)射入光纖光增幅器、且在點光SP未往被照射體上投射之非描繪時使第2脈衝光(種光S2)射入光纖光增幅器(216)之方式,進行切換。此切換裝置,係以根據待描繪圖案資訊選擇第1脈衝光(種光S1)與第2脈衝光(種光S2)之任一者之電氣光學元件(206)、或者以產生第1脈衝光(種光S1)與第2脈衝光(種光S2)之任一者之方式根據待描繪圖案資訊控制第1半導體雷射光源(200)與第2半導體雷射光源(202)之驅動之電路構成。Above, the
本第3實施形態亦可適用於上述第1實施形態或其變形例、上述第2實施形態。亦即,可將在第3實施形態說明之光源裝置14A之控制電路222內之時脈產生器222a依據來自圖18所示之描繪控制用之控制單元(控制電路500)之倍率修正資訊CMg使時脈訊號LTC之時間間隔部分地(離散地)伸縮之功能適用於上述第1實施形態或其變形例之光源裝置14、上述第2實施形態之光源裝置14。此情形,光源裝置14亦可不具有DFB半導體雷射元件202、偏光分束器204、電氣光學元件206、偏光分束器208、及吸收體210,亦即,光源裝置14亦可以光纖光增幅器216使DFB半導體雷射元件200發光之脈衝狀種光S1增幅,作為光束LB射出。此情形,由於光源裝置14不具有電氣光學元件206,因此產生電路301, 303, 305產生之序列資料DL1, DL3, DL5傳送至掃描單元Un之描繪用光學元件106或描繪用光學元件150。The third embodiment can also be applied to the above-mentioned first embodiment or its modification, and the above-mentioned second embodiment. That is, the
(第4實施形態)
圖23係顯示第4實施形態之包含對基板(被照射體)FS施加曝光處理之曝光裝置EX之元件製造系統10之概略構成之圖。此外,在未特別限定下,對與上述第1~第3實施形態(包含變形例)相同之構成賦予相同符號或省略圖示,僅說明不同部分。
(Fourth embodiment)
23 is a diagram showing a schematic configuration of a
在本第4實施形態,與上述第1~第3實施形態(包含變形例)相同,作為掃描裝置之曝光裝置EX係不使用光罩之直接描繪方式之曝光裝置,亦即所謂逐線掃描方式之曝光裝置。曝光裝置EX,替代上述第1~第3實施形態(包含變形例)說明之描繪頭16,具備光束切換構件20及曝光頭22。又,曝光裝置EX亦具備複數個對準顯微鏡AMm(AM1~AM4)。在第1~第3實施形態(包含變形例)雖未特別說明,但上述第1~第3實施形態之曝光裝置EX亦具備複數個對準顯微鏡AMm(AM1~AM4)。此外,在第4實施形態之曝光裝置EX當然具備基板搬送機構12、光源裝置14’、及控制裝置18。此外,本第4實施形態之光源裝置14’以與上述第2實施形態之變形例說明之光源裝置14(14A, 14B)相同構成(參照圖17)為前提。此光源裝置14’射出之光束LB透過光束切換構件20射入曝光頭22。In the fourth embodiment, similar to the above-mentioned first to third embodiments (including modification examples), the exposure device EX as a scanning device is an exposure device of a direct drawing method that does not use a mask, that is, a so-called line-by-line scanning method Of the exposure device. The exposure apparatus EX includes a
光束切換構件20以對構成曝光頭22之複數個掃描單元Un(U1~U6)中進行點光SP之一維掃描之一個掃描單元Un射入來自光源裝置14’之光束LB之方式切換光束LB之光路。關於此光束切換構件20將在之後詳細說明。The light
曝光頭22具備光束LB分別射入之複數個掃描單元Un(U1~U6)。曝光頭22藉由複數個掃描單元Un(U1~U6)在被旋轉筒DR之圓周面支承之基板FS之一部分描繪圖案。曝光頭22為排列有同一構成之複數個掃描單元Un(U1~U6)之所謂多光束型曝光頭。如圖23所示,奇數號掃描單元U1, U3, U5相對於中心面Poc配置在基板FS之搬送方向之上游側(-X方向側)且沿著Y方向配置。偶數號掃描單元U2, U4, U6相對於中心面Poc配置在基板FS之搬送方向之下游側(+X方向側)且沿著Y方向配置。奇數號掃描單元U1, U3, U5與偶數號掃描單元U2, U4, U6相對於中心面Poc設成對稱。亦即,在第4實施形態,奇數號掃描單元U1, U3, U5與偶數號掃描單元U2, U4, U6之配置與上述第1~第3實施形態(包含變形例)說明者相反。The
掃描單元Un一邊將來自光源裝置14’之光束LB以收斂成點光SP之方式投射至基板FS之被照射面上、一邊藉由旋轉之多面鏡PM(參照圖28)使該點光SP在基板FS之被照射面上沿著既定直線之描繪線(掃描線)SLn進行一維掃描。The scanning unit Un projects the light beam LB from the light source device 14' onto the irradiated surface of the substrate FS so as to converge into the spot light SP, and the spot light SP is turned on by the rotating polygon mirror PM (see FIG. 28). The irradiated surface of the substrate FS performs one-dimensional scanning along a predetermined straight line (scanning line) SLn.
複數個掃描單元Un(U1~U6)係以既定配置關係配置。在本第4實施形態,複數個掃描單元Un(U1~U6)係配置成複數個掃描單元Un(U1~U6)之描繪線SLn(SL1~SL6)如圖24、圖25所示在Y方向(基板FS之寬方向、主掃描方向)彼此未分離地接續。此外,如在第1~第3實施形態(變形例)所述,會有將射入各掃描單元Un(U1~U6)之光束LB分別以LB1~LB6表示之情形。射入此掃描單元Un之光束LB為在既定方向偏光之直線偏光(P偏光或S偏光)之光束,在本第4實施形態,為P偏光之光束。又,亦有將射入六個掃描單元U1~U6之各個之光束LB1~LB6表示成光束LBn之情形。The plural scanning units Un (U1~U6) are arranged in a predetermined arrangement relationship. In the fourth embodiment, the plurality of scanning units Un (U1 to U6) are arranged as the drawing lines SLn (SL1 to SL6) of the plurality of scanning units Un (U1 to U6) in the Y direction as shown in FIGS. 24 and 25 (The width direction of the substrate FS, the main scanning direction) are connected without being separated from each other. In addition, as described in the first to third embodiments (modifications), the light beam LB incident on each scanning unit Un (U1 to U6) may be represented by LB1 to LB6, respectively. The light beam LB incident on the scanning unit Un is a linearly polarized light beam (P-polarized light or S-polarized light) polarized in a predetermined direction. In the fourth embodiment, it is a P-polarized light beam. In addition, there are cases where light beams LB1 to LB6 incident on each of the six scanning units U1 to U6 are represented as light beams LBn.
如圖25所示,以複數個掃描單元Un(U1~U6)全部覆蓋曝光區域W之寬方向全部之方式,各掃描單元Un(U1~U6)分擔掃描區域。藉此,各掃描單元Un(U1~U6)可就在基板FS之寬方向分割之複數個區域描繪圖案。例如,若設一個掃描單元Un之Y方向之掃描長度(描繪線SLn之長度)為30~60mm程度,則藉由將三個奇數號掃描單元U1, U3, U5與三個偶數號掃描單元U2, U4, U6之合計六個掃描單元Un配置在Y方向,可描繪之Y方向寬度擴展至180~360mm程度。各描繪線SL1~SL6之長度(掃描長度、主掃描方向之掃描寬)原則上相同。As shown in FIG. 25, each scanning unit Un (U1 to U6) shares the scanning area in such a manner that a plurality of scanning units Un (U1 to U6) all cover the entire width direction of the exposure area W. With this, each scanning unit Un (U1 to U6) can draw a pattern on a plurality of regions divided in the width direction of the substrate FS. For example, if the scanning length of the Y direction of one scanning unit Un (the length of the drawing line SLn) is about 30 to 60 mm, by dividing three odd-numbered scanning units U1, U3, U5 and three even-numbered scanning units U2 , U4, U6, a total of six scanning units Un are arranged in the Y direction, the width of the Y direction can be extended to 180 ~ 360mm. In principle, the lengths of the drawing lines SL1 to SL6 (scanning length, scanning width in the main scanning direction) are basically the same.
此外,如上述,實際之各描繪線SLn(SL1~SL6)係設定成較點光SP可在被照射面上實際掃描之最大長度短一些。藉由以上述方式設定,在點光SP之最大掃描長度(例如,31mm)之範圍內,可在主掃描方向微調描繪線SLn(例如,掃描長度30mm)之位置或微調描繪倍率。點光SP之最大掃描長度主要由設在掃描單元Un內之多面鏡(旋轉多面鏡)PM後之fθ透鏡FT(參照圖28)之口徑決定。In addition, as described above, the actual drawing lines SLn (SL1 to SL6) are set to be shorter than the maximum length that the spot light SP can actually scan on the illuminated surface. By setting in the above manner, within the range of the maximum scanning length of the spot light SP (for example, 31 mm), the position of the drawing line SLn (for example, scanning length of 30 mm) or the drawing magnification can be finely adjusted in the main scanning direction. The maximum scanning length of the spot light SP is mainly determined by the aperture of the fθ lens FT (refer to FIG. 28) after the polygon mirror (rotating polygon mirror) PM provided in the scanning unit Un.
複數條描繪線(掃描線)SL1~SL6隔著中心面Poc二列地配置在旋轉筒DR之周方向。奇數號描繪線SL1, SL3, SL5相對於中心面Poc位於基板FS之搬送方向之上游側(-X方向側)之基板FS之被照射面上。偶數號描繪線SL2, SL4, SL6相對於中心面Poc位於基板FS之搬送方向之下游側(+X方向側)之基板FS之被照射面上。描繪線SL1~SL6與基板FS之寬方向、亦即旋轉筒DR之中心軸AXo大致平行。A plurality of drawing lines (scanning lines) SL1 to SL6 are arranged in two rows across the center plane Poc in the circumferential direction of the rotating drum DR. The odd-numbered drawing lines SL1, SL3, SL5 are located on the irradiated surface of the substrate FS with respect to the central plane Poc on the upstream side (-X direction side) of the substrate FS in the transport direction. The even-numbered drawing lines SL2, SL4, SL6 are located on the irradiated surface of the substrate FS on the downstream side (+X direction side) of the substrate FS in the conveying direction with respect to the central plane Poc. The drawing lines SL1 to SL6 are substantially parallel to the width direction of the substrate FS, that is, the central axis AXo of the rotating drum DR.
描繪線SL1, SL3, SL5沿著基板FS之寬方向(掃描方向)隔著既定間隔配置在直線上。描繪線SL2, SL4, SL6亦同樣地沿著基板FS之寬方向(掃描方向)隔著既定間隔配置在直線上。沿著奇數號描繪線SL1, SL3, SL5之各個掃描之光束LBn之點光SP之掃描方向為一維方向,為-Y方向。沿著偶數號描繪線SL2, SL4, SL6之各個掃描之光束LBn之點光SP之掃描方向為一維方向,為+Y方向。The drawing lines SL1, SL3, SL5 are arranged on a straight line at predetermined intervals along the width direction (scanning direction) of the substrate FS. The drawing lines SL2, SL4, and SL6 are also arranged on the straight line at predetermined intervals along the width direction (scanning direction) of the substrate FS. The scanning direction of the spot light SP of each scanning beam LBn along the odd-numbered drawing lines SL1, SL3, SL5 is a one-dimensional direction, which is the -Y direction. The scanning direction of the spot light SP of each scanning beam LBn along the even-numbered drawing lines SL2, SL4, SL6 is a one-dimensional direction, which is the +Y direction.
在第4實施形態,複數個掃描單元Un(U1~U6)依據預先決定之順序(既定順序)反覆進行光束LBn之點光SP之掃描。例如,進行點光SP之掃描之掃描單元Un之順序為U1→U2→U3→U4→U5→U6之情形,首先,掃描單元U1進行一次點光SP之掃描。接著,掃描單元U1之點光SP之掃描結束後,掃描單元U2進行一次點光SP之掃描,其掃描結束後,掃描單元U3進行一次點光SP之掃描,以上述方式,複數個掃描單元Un(U1~U6)以既定順序逐一進行一次點光SP之掃描。接著,掃描單元U6之點光SP之掃描結束後,返回掃描單元U1之點光SP之掃描。如上述,複數個掃描單元Un(U1~U6)以既定順序反覆點光SP之掃描。In the fourth embodiment, a plurality of scanning units Un (U1 to U6) repeatedly scan the spot light SP of the light beam LBn according to a predetermined order (predetermined order). For example, in the case where the order of the scanning unit Un for scanning the spot light SP is U1→U2→U3→U4→U5→U6, first, the scanning unit U1 scans the spot light SP once. Then, after the scanning of the spot light SP of the scanning unit U1 is completed, the scanning unit U2 performs a scanning of the spot light SP. After the scanning, the scanning unit U3 performs a scanning of the spot light SP. In the above manner, a plurality of scanning units Un (U1~U6) Scan the spot light SP one by one in the predetermined order. Then, after the scanning of the spot light SP of the scanning unit U6 is completed, it returns to the scanning of the spot light SP of the scanning unit U1. As described above, the plural scanning units Un (U1 to U6) repeatedly scan the spot light SP in a predetermined order.
各掃描單元Un(U1~U6),在至少XZ平面,以各光束LBn朝向旋轉筒DR之中心軸AXo行進之方式,朝向基板FS照射各光束LBn。藉此,從各掃描單元Un(U1~U6)朝向基板FS行進之光束LBn之光路(光束中心軸),在XZ平面與基板FS之被照射面之法線同軸(平行)。又,各掃描單元Un(U1~U6),以照射至描繪線SLn(SL1~SL6)之光束LBn在與YZ平面平行之面內相對於基板FS之被照射面成為垂直之方式,朝向基板FS照射光束LBn。亦即,在光束SP在被照射面之主掃描方向,投射至基板FS之光束LBn(LB1~LB6)係以遠心狀態掃描。此處,將通過各掃描單元Un(U1~U6)所規定之描繪線SLn(SL1~SL6)之各中點而與基板FS之被照射面垂直之線(或稱為光軸)稱為照射中心軸Len(Le1~Le6)(參照圖24)。Each scanning unit Un (U1 to U6) irradiates each light beam LBn toward the substrate FS such that each light beam LBn travels toward the central axis AXo of the rotating drum DR in at least the XZ plane. As a result, the optical path (beam central axis) of the light beam LBn traveling from each scanning unit Un (U1 to U6) toward the substrate FS is coaxial (parallel) to the normal of the illuminated surface of the substrate FS in the XZ plane. In addition, each scanning unit Un (U1 to U6) faces the substrate FS such that the light beam LBn irradiated to the drawing line SLn (SL1 to SL6) is perpendicular to the irradiated surface of the substrate FS in a plane parallel to the YZ plane Irradiate the light beam LBn. That is, in the main scanning direction of the light beam SP in the illuminated surface, the light beam LBn (LB1 to LB6) projected onto the substrate FS is scanned in a telecentric state. Here, a line (or optical axis) perpendicular to the illuminated surface of the substrate FS through each midpoint of the drawing line SLn (SL1 to SL6) defined by each scanning unit Un (U1 to U6) is called irradiation. The central axis Len (Le1 to Le6) (refer to FIG. 24).
此各照射中心軸Len(Le1~Le6),在XZ平面,為連結描繪線SL1~SL6與中心軸AXo之線。奇數號掃描單元U1, U3, U5之各個之照射中心軸Le1, Le3, Le5在XZ平面為相同方向,偶數號掃描單元U2, U4, U6之各個之照射中心軸Le2, Le4, Le6在XZ平面為相同方向。又,照射中心軸Le1, Le3, Le5與照射中心軸Le2, Le4, Le6,在XZ平面,設定成相對於中心面Poc角度成為±θ(參照圖23)。Each of the irradiation central axes Len (Le1 to Le6) is a line connecting the drawing lines SL1 to SL6 and the central axis AXo in the XZ plane. The irradiation central axes Le1, Le3, Le5 of the odd-numbered scanning units U1, U3, U5 are in the same direction in the XZ plane, and the irradiation central axes Le2, Le4, Le6 of the even-numbered scanning units U2, U4, U6 are in the XZ plane For the same direction. In addition, the irradiation center axes Le1, Le3, Le5 and the irradiation center axes Le2, Le4, Le6 are set to ±θ with respect to the center plane Poc angle in the XZ plane (see FIG. 23).
圖23所示之對準顯微鏡AMm(AM1~AM4),如圖25所示,用以檢測形成在基板FS之對準標記MKm(MK1~MK4),沿著Y方向設有複數個(本第4實施形態為四個)。對準標記MKm(MK1~MK4)係用以使在基板FS之被照射面上之曝光區域W描繪之既定圖案與基板FS相對地對準之基準標記。對準顯微鏡AMm(AM1~AM4),在旋轉筒DR之圓周面所支承之基板FS上,檢測對準標記MKm(MK1~MK4)。對準顯微鏡AMm(AM1~AM4)係設在較來自曝光頭22之光束LBn(LB1~LB6)之點光SP形成之基板FS上之被照射區域(描繪線SL1~SL6所圍繞之區域)靠基板FS之搬送方向之上游側(-X方向側)。The alignment microscope AMm (AM1~AM4) shown in FIG. 23, as shown in FIG. 25, is used to detect the alignment marks MKm (MK1~MK4) formed on the substrate FS. 4 Embodiments are four). The alignment marks MKm (MK1 to MK4) are reference marks for aligning a predetermined pattern drawn on the exposed area W of the illuminated surface of the substrate FS relative to the substrate FS. Align the microscope AMm (AM1~AM4), and detect the alignment mark MKm (MK1~MK4) on the substrate FS supported by the circumferential surface of the rotating drum DR. The alignment microscope AMm (AM1~AM4) is located closer to the illuminated area (the area surrounded by the drawing lines SL1~SL6) on the substrate FS formed by the spot light SP of the light beam LBn (LB1~LB6) from the
對準顯微鏡AMm(AM1~AM4)具有將對準用照明光投射至基板FS之光源、獲得包含基板FS表面之對準標記MKm(MK1~MK4)之局部區域(觀察區域)之放大像之觀察光學系(包含物鏡)、及在基板FS在搬送方向移動之期間以高速光閘拍攝該放大像之CCD、CMOS等攝影元件。對準顯微鏡AMm(AM1~AM4)拍攝之攝影訊號(影像資料)ig(ig1~ig4)係傳送至控制裝置18。控制裝置18根據攝影訊號ig(ig1~ig4)之影像解析與拍攝瞬間之旋轉筒DR之旋轉位置之資訊(讀取圖24所示之標尺部SD之編碼器EN1a, EN1b之測量值),檢測對準標記MKm(MK1~MK4)之位置,高精度地測量基板FS之位置。此外,對準用照明光係對基板FS上之感光性機能層幾乎不具感度之波長域之光,例如,波長500~800nm程度之光。The alignment microscope AMm (AM1~AM4) has observation optics for projecting the illumination light for alignment onto the substrate FS and obtaining an enlarged image of the local area (observation area) including the alignment marks MKm (MK1~MK4) on the surface of the substrate FS (Including the objective lens), and the CCD, CMOS, and other photographic elements that capture the magnified image with the high-speed shutter while the substrate FS is moving in the transport direction. The photographic signals (image data) ig (ig1~ig4) taken by the alignment microscope AMm (AM1~AM4) are sent to the
對準標記MK1~MK4係設在各曝光區域W之周圍。對準標記MK1, MK4,在曝光區域W之基板FS之寬方向兩側,沿著基板FS之長邊方向以一定間隔DI形成有複數個。對準標記MK1形成在基板FS之寬方向之-Y方向側,對準標記MK4形成在基板FS之寬方向之+Y方向側。上述對準標記MK1~MK4,在基板FS受到大張力或接受熱製程而未變形之狀態下,配置成在基板FS之長邊方向(X方向)成為相同位置。再者,對準標記MK2, MK3,係沿著基板FS之寬方向(短邊方向)形成在對準標記MK1與對準標記MK4之間、即曝光區域W之+X方向側與-X方向側之余白部。對準標記MK2, MK3係形成在曝光區域W與曝光區域W之間。對準標記MK2形成在基板FS之寬方向之-Y方向側,對準標記MK3形成在基板FS之+Y方向側。The alignment marks MK1 to MK4 are provided around each exposure area W. A plurality of alignment marks MK1, MK4 are formed on the both sides of the substrate FS in the exposure area W in the width direction along the long side direction of the substrate FS at a certain interval DI. The alignment mark MK1 is formed on the −Y direction side in the width direction of the substrate FS, and the alignment mark MK4 is formed on the +Y direction side in the width direction of the substrate FS. The alignment marks MK1 to MK4 are arranged in the same position in the longitudinal direction (X direction) of the substrate FS when the substrate FS is subjected to a large tension or undergoes a thermal process without being deformed. Furthermore, the alignment marks MK2, MK3 are formed between the alignment mark MK1 and the alignment mark MK4 along the width direction (short side direction) of the substrate FS, that is, the +X direction side and the -X direction of the exposure area W Side of the white department. The alignment marks MK2 and MK3 are formed between the exposure area W and the exposure area W. The alignment mark MK2 is formed on the -Y direction side of the substrate FS in the width direction, and the alignment mark MK3 is formed on the +Y direction side of the substrate FS.
再者,排列在基板FS之-Y方向之側端部之對準標記MK1與余白部之對準標記MK2在Y方向之間隔、余白部之對準標記MK2與對準標記MK3在Y方向之間隔、及排列在基板FS之+Y方向之側端部之對準標記MK4與余白部之對準標記MK3在Y方向之間隔皆設定成相同距離。此等對準標記MKm(MK1~MK4)亦可在第1層之圖案形成時一起形成。例如,使第1層之圖案曝光時,亦可在圖案曝光之曝光區域W之周圍使對準標記用圖案一起曝光。此外,對準標記MKm亦可形成在曝光區域W內。例如,亦可在曝光區域W內沿著曝光區域W之輪廓形成。又,在曝光區域W內形成對準標記MKm之情形,亦可將形成在曝光區域W內之電子元件之圖案中特定位置之圖案部分或者特定形態之部分利用為對準標記MKm。Furthermore, the distance between the alignment mark MK1 and the alignment mark MK2 of the white part arranged in the Y direction of the substrate FS in the Y direction, and the alignment mark MK2 and the alignment mark MK3 of the white part in the Y direction The interval and the interval between the alignment marks MK4 and the alignment marks MK3 arranged on the side of the +Y direction of the substrate FS in the Y direction are set to the same distance. These alignment marks MKm (MK1~MK4) can also be formed together during the patterning of the first layer. For example, when exposing the pattern of the first layer, the alignment mark pattern may be exposed together around the exposure area W where the pattern is exposed. In addition, the alignment mark MKm may also be formed in the exposure area W. For example, the exposure area W may be formed along the outline of the exposure area W. In addition, when the alignment mark MKm is formed in the exposure area W, a pattern portion or a specific shape portion at a specific position in the pattern of the electronic component formed in the exposure area W may also be used as the alignment mark MKm.
對準顯微鏡AM1係配置成拍攝存在於物鏡之觀察區域(檢測區域)Vw1內之對準標記MK1。同樣地,對準顯微鏡AM2~AM4係配置成拍攝存在於物鏡之觀察區域Vw2~Vw4內之對準標記MK2~MK4。是以,複數個對準顯微鏡AM1~AM4,對應複數個對準標記MK1~MK4之位置,從基板FS之-Y方向側以對準顯微鏡AM1~AM4之順序設置。對準顯微鏡AMm(AM1~AM4),係設成曝光位置(描繪線SL1~SL6)與對準顯微鏡AMm之觀察區域Vw(Vw1~Vw4)在X方向之距離較曝光區域W在X方向之長度短。設在Y方向之對準顯微鏡AMm之數可依據形成在基板FS之寬方向之對準標記MKm之數變更。又,觀察區域Vw1~Vw4在基板FS之被照射面上之大小雖依據對準標記MK1~MK4之大小或對準精度(位置測量精度)設定,但為100~500μm見方程度之大小。此外,在第1~第3實施形態(包含變形例)雖未特別說明,但在上述第1~第3實施形態使用之基板FS亦形成有複數個對準標記MKm。The alignment microscope AM1 is configured to photograph the alignment mark MK1 existing in the observation area (detection area) Vw1 of the objective lens. Similarly, the alignment microscopes AM2 to AM4 are configured to capture the alignment marks MK2 to MK4 existing in the observation area Vw2 to Vw4 of the objective lens. Therefore, a plurality of alignment microscopes AM1 to AM4 corresponding to the positions of the plurality of alignment marks MK1 to MK4 are arranged in the order of alignment microscopes AM1 to AM4 from the -Y direction side of the substrate FS. The alignment microscope AMm (AM1~AM4) is set to the distance between the exposure position (drawing lines SL1~SL6) and the observation area Vw (Vw1~Vw4) of the alignment microscope AMm in the X direction compared to the length of the exposure area W in the X direction short. The number of alignment microscopes AMm provided in the Y direction can be changed according to the number of alignment marks MKm formed in the width direction of the substrate FS. Moreover, the size of the observation areas Vw1 to Vw4 on the illuminated surface of the substrate FS is set according to the size of the alignment marks MK1 to MK4 or the alignment accuracy (position measurement accuracy), but it is about 100 to 500 μm square. In addition, although not particularly described in the first to third embodiments (including modified examples), a plurality of alignment marks MKm are also formed in the substrate FS used in the above first to third embodiments.
如圖24所示,在旋轉筒DR之兩端部設有具有在旋轉筒DR之外周面之周方向整體形成為環狀之刻度之標尺部SD(SDa, SDb)。此標尺部SD(SDa, SDb)係在旋轉筒DR之外周面之周方向以一定間距(例如,20μm)刻設有凹狀或凸狀之格子線之繞射光柵,構成為遞增型標尺。此標尺部SD(SDa, SDb)與旋轉筒DR一體地繞中心軸AXo旋轉。又,以與此標尺部SD(SDa, SDb)對向之方式設有複數個編碼器(標尺讀取頭)ENn。此編碼器ENn光學地檢測旋轉筒DR之旋轉位置。與設在旋轉筒DR之-Y方向側之端部之標尺部SDa對向地設有三個編碼器ENn(EN1a, EN2a, EN3a)。同樣地,與設在旋轉筒DR之+Y方向側之端部之標尺部SDb對向地設有三個編碼器ENn(EN1b, EN2b, EN3b)。此外,在第1~第3實施形態(包含變形例)雖未特別說明,但在上述第1~第3實施形態之旋轉筒DR之兩端部設有標尺部SD(SDa, SDb),以與其對向之方式設有複數個編碼器ENn(EN1a~EN3a, EN1b~EN2b)。As shown in FIG. 24, at both ends of the rotating drum DR, scale parts SD (SDa, SDb) having scales formed in a ring shape in the circumferential direction of the outer circumferential surface of the rotating drum DR as a whole are provided. The scale portion SD (SDa, SDb) is a diffraction grating in which concave or convex lattice lines are engraved at a certain pitch (for example, 20 μm) in the circumferential direction of the outer peripheral surface of the rotating drum DR, and constitutes an incremental scale. The scale part SD (SDa, SDb) rotates about the central axis AXo integrally with the rotating drum DR. In addition, a plurality of encoders (scale reading heads) ENn are provided so as to face the scale parts SD (SDa, SDb). This encoder ENn optically detects the rotational position of the rotary drum DR. Three encoders ENn (EN1a, EN2a, EN3a) are provided opposite to the scale part SDa provided at the end of the -Y direction side of the rotating drum DR. Similarly, three encoders ENn (EN1b, EN2b, EN3b) are provided opposite to the scale part SDb provided at the end of the +Y direction side of the rotating drum DR. In addition, although not specifically described in the first to third embodiments (including modified examples), scale parts SD (SDa, SDb) are provided at both ends of the rotating drum DR in the above first to third embodiments, to A plurality of encoders ENn (EN1a~EN3a, EN1b~EN2b) are provided in the opposite way.
編碼器ENn(EN1a~EN3a, EN1b~EN3b)朝向標尺部SD(SDa, SDb)投射測量用之光束,藉由光電地檢測其反射光束(繞射光),將脈衝訊號即檢測訊號輸出至控制裝置18。控制裝置18以計數器電路356a(參照圖33)對該檢測訊號(脈衝訊號)進行計數,藉此能以次微米之分解能測量旋轉筒DR之旋轉角度位置及角度變化。計數器電路356a對各編碼器ENn(EN1a~EN3a, EN1b~EN3b)之檢測訊號分別個別地進行計數。控制裝置18亦可從旋轉筒DR之角度變化測量基板FS之搬送速度。對各編碼器ENn(EN1a~EN3a, EN1b~EN3b)之各個之檢測訊號個別地進行計數之計數器電路356a,在各編碼器ENn(EN1a~EN3a, EN1b~EN3b)檢測形成在標尺部SDa, SDb之周方向之一部分之原點標記(原點圖案)ZZ後,將對應該編碼器ENn之計數值重置為0。The encoder ENn (EN1a~EN3a, EN1b~EN3b) projects the measuring beam toward the scale SD (SDa, SDb), and the reflected beam (diffracted light) is detected by photoelectricity, and the pulse signal, that is, the detection signal, is output to the
編碼器EN1a, EN1b配置在設置方位線Lx1上。設置方位線Lx1為在XZ平面連結編碼器EN1a, EN1b之測量用之光束對標尺部SD(SDa, SDb)上之投射位置(讀取位置)與中心軸AXo之線。又,設置方位線Lx1為在XZ平面連結各對準顯微鏡AMm(AM1~AM4)之觀察區域Vw(Vw1~Vw4)與中心軸AXo之線。The encoders EN1a, EN1b are arranged on the set azimuth line Lx1. The azimuth line Lx1 is a line connecting the projection position (reading position) on the scale part SD (SDa, SDb) and the central axis AXo of the measuring beams of the encoders EN1a and EN1b in the XZ plane. In addition, the azimuth line Lx1 is a line connecting the observation area Vw (Vw1 to Vw4) of each alignment microscope AMm (AM1 to AM4) and the central axis AXo in the XZ plane.
編碼器EN2a, EN2b相對於中心面Poc設在基板FS之搬送方向之上游側(-X方向側),且較編碼器EN1a, EN1b設在基板FS之搬送方向之下游側(+X方向側)。編碼器EN2a, EN2b配置在設置方位線Lx2上。設置方位線Lx2為在XZ平面連結編碼器EN2a, EN2b之測量用之光束對標尺部SD(SDa, SDb)上之投射位置與中心軸AXo之線。此設置方位線Lx2,在XZ平面,與照射中心軸Le1, Le3, Le5為相同角度位置而重疊。Encoders EN2a, EN2b are located on the upstream side of the substrate FS in the transport direction (-X direction side) with respect to the center plane Poc, and are located downstream of the substrate FS in the transport direction (+X direction side) than the encoders EN1a, EN1b . The encoders EN2a, EN2b are arranged on the set azimuth line Lx2. The azimuth line Lx2 is a line connecting the projection position on the scale part SD (SDa, SDb) and the central axis AXo of the measuring beams of the encoders EN2a and EN2b in the XZ plane. This setting azimuth line Lx2, in the XZ plane, overlaps the irradiation central axes Le1, Le3, Le5 at the same angular position.
編碼器EN3a, EN3b相對於中心面Poc設在基板FS之搬送方向之下游側(+X方向側)。編碼器EN3a, EN3b配置在設置方位線Lx3上。設置方位線Lx3為在XZ平面連結編碼器EN3a, EN3b之測量用之光束對標尺部SD(SDa, SDb)上之投射位置與中心軸AXo之線。此設置方位線Lx3,在XZ平面,與照射中心軸Le2, Le4, Le6為相同角度位置而重疊。The encoders EN3a and EN3b are provided on the downstream side (+X direction side) of the substrate FS in the transport direction with respect to the center plane Poc. The encoders EN3a, EN3b are arranged on the set azimuth line Lx3. The azimuth line Lx3 is a line connecting the projection position on the scale part SD (SDa, SDb) and the central axis AXo of the measuring beams of the encoders EN3a and EN3b in the XZ plane. This setting azimuth line Lx3, in the XZ plane, overlaps the irradiation central axes Le2, Le4, Le6 at the same angular position.
來自此編碼器EN1a, EN1b之檢測訊號之計數值(旋轉角度位置)、來自編碼器EN2a, EN2b之檢測訊號之計數值(旋轉角度位置)、及來自編碼器EN3a, EN3b之檢測訊號之計數值(旋轉角度位置),在各編碼器ENn檢測出附設在旋轉筒DR之旋繞方向之一處之原點標記ZZ之瞬間重置為0。因此,設以編碼器EN1a, EN1b為依據之計數值為第1值(例如,100)時之捲繞在旋轉筒DR之基板FS在設置方位線Lx1上之位置(對準顯微鏡AM1~AM4之各觀察區域Vw1~Vw4之位置)為第1位置之情形,基板FS上之第1位置搬送至設置方位線Lx2上之位置(描繪線SL1, SL3, SL5之位置)後,以編碼器EN2a, EN2b為依據之計數值成為第1值(例如,100)。同樣地,基板FS上之第1位置搬送至設置方位線Lx3上之位置(描繪線SL2, SL4, SL6之位置)後,以編碼器EN3a, EN3b為依據之檢測訊號之計數值成為第1值(例如,100)。The count value (rotation angle position) of the detection signal from the encoder EN1a, EN1b, the count value (rotation angle position) of the detection signal from the encoder EN2a, EN2b, and the count value of the detection signal from the encoder EN3a, EN3b (Rotation angle position), when each encoder ENn detects the origin mark ZZ attached to one of the rotation directions of the rotary drum DR, it resets to 0. Therefore, suppose that the count value based on the encoders EN1a, EN1b is the first value (for example, 100) when the position of the substrate FS wound on the rotating drum DR on the set azimuth line Lx1 (aligned with the microscope AM1~AM4) The position of each observation area Vw1~Vw4) is the first position. After the first position on the substrate FS is transferred to the position on the azimuth line Lx2 (the position of the drawing lines SL1, SL3, SL5), the encoder EN2a, The count value based on EN2b becomes the first value (for example, 100). Similarly, after the first position on the substrate FS is transferred to the position on the azimuth line Lx3 (the position of the drawing lines SL2, SL4, SL6), the count value of the detection signal based on the encoders EN3a, EN3b becomes the first value (For example, 100).
然而,基板 FS捲繞在較旋轉筒DR之兩端之標尺部SDa, SDb內側。圖23中,將自標尺部SD(SDa, SDb)之外周面之中心軸AXo之半徑設定成較自旋轉筒DR之外周面之中心軸AXo之半徑小。然而,如圖24所示,亦可將標尺部SD(SDa, SDb)之外周面設定成與捲繞在旋轉筒DR之基板FS之外周面成為同一面。亦即,亦可設定成自標尺部SD(SDa, SDb)之外周面之中心軸AXo之半徑(距離)與自捲繞在旋轉筒DR之基板FS之外周面(被照射面)之中心軸AXo之半徑(距離)成為相同。藉此,編碼器ENn(EN1a, EN1b, EN2a, EN2b, EN3a, EN3b)可在與捲繞在旋轉筒DR之基板FS之被照射面相同徑方向之位置檢測標尺部SD(SDa, SDb),可縮小因編碼器ENn之測量位置與處理位置(描繪線SL1~SL6)在旋轉筒DR之徑方向不同產生之阿貝誤差。However, the substrate FS is wound inside the scale portions SDa, SDb at both ends of the rotating drum DR. In FIG. 23, the radius of the central axis AXo from the outer peripheral surface of the scale portion SD (SDa, SDb) is set to be smaller than the radius of the central axis AXo of the outer peripheral surface of the self-rotating drum DR. However, as shown in FIG. 24, the outer peripheral surface of the scale portion SD (SDa, SDb) may be set to be the same as the outer peripheral surface of the substrate FS wound around the rotating drum DR. That is, the radius (distance) from the central axis AXo of the outer peripheral surface of the scale portion SD (SDa, SDb) and the central axis of the outer peripheral surface (irradiated surface) of the substrate FS wound around the rotating drum DR can also be set The radius (distance) of AXo becomes the same. By this, the encoder ENn (EN1a, EN1b, EN2a, EN2b, EN3a, EN3b) can detect the scale part SD (SDa, SDb) at the same radial direction as the irradiated surface of the substrate FS wound on the rotating drum DR, The Abbe error caused by the difference between the measurement position and the processing position of the encoder ENn (drawing lines SL1 to SL6) in the radial direction of the rotary drum DR can be reduced.
根據上述說明,根據對準顯微鏡AMm(AM1~AM4)所檢測出之對準標記MKm(MK1~MK4)之位置(編碼器EN1a, EN1b之技術值),藉由控制裝置18決定基板FS之長邊方向(X方向)在曝光區域W之描繪曝光之開始位置,此時,設以編碼器EN1a, EN1b為依據之計數值為第1值(例如,100)。此情形,以編碼器EN2a, EN2b為依據之計數值成為第1值(例如,100)後,基板FS之長邊方向在曝光區域W之描繪曝光之開始位置位於描繪線SL1, SL3, SL5上。是以,掃描單元U1, U3, U5可根據編碼器EN2a, EN2b之計數值開始點光SP之掃描。又,以編碼器EN3a, EN3b為依據之計數值成為第1值(例如,100)後,基板FS之長邊方向在曝光區域W之描繪曝光之開始位置位於描繪線SL2, SL4, SL6上。是以,掃描單元U2, U4, U6可根據編碼器EN3a, EN3b之計數值開始點光SP之掃描。此外,在第1~第3實施形態(包含變形例)雖未特別說明,但上述第1~第3實施形態之曝光裝置EX亦具備編碼器ENn(EN1a~EN3a, EN1b~EN3b)及標尺部SD(SDa, SDb)。According to the above description, the length of the substrate FS is determined by the
圖26係光束切換構件20之構成圖。光束切換構件20具有複數個選擇用光學元件AOMn(AOM1~AOM6)、複數個聚光透鏡CD1~CD6、複數個反射鏡M1~M12、複數個單元側入射鏡IM1~IM6、複數個準直鏡CL1~CL6、及吸收體TR。選擇用光學元件AOMn(AOM1~AOM6)對光束LB具有透射性,為被超音波訊號驅動之聲光調變元件(AOM:Acousto-Optic Modulator)。此等光學構件(選擇用光學元件AOM1~AOM6、聚光透鏡CD1~CD6、反射鏡M1~M12、單元側入射鏡IM1~IM6、準直鏡CL1~CL6、及吸收體TR)被板狀之支承構件IUB支承。此支承構件IUB,在複數個掃描單元Un(U1~U6)之上方,從下方(-Z方向側)支承此等光學構件。是以,支承構件IUB,亦具備使作為發熱源之選擇用光學元件AOMn(AOM1~AOM6)與複數個掃描單元Un(U1~U6)之間隔熱之功能。26 is a configuration diagram of the
光束LB之光路從光源裝置14’被反射鏡M1~M12彎折成鋸齒狀,導至吸收體TR。以下,在選擇用光學元件AOMn(AOM1~AOM6)皆為OFF之狀態(未施加超音波訊號之狀態)之情形,詳細說明。來自光源裝置14’之光束LB(平行光束)與Y軸平行地往+Y方向行進後通過聚光透鏡CD1射入反射鏡M1。被反射鏡M1往-X方向側反射之光束LB直線地透射過配置在聚光透鏡CD1之焦點位置(光束腰寬位置)之第1選擇用光學元件AOM1,藉由準直鏡CL1再次成為平行光束,到達反射鏡M2。被反射鏡M2往+Y方向側反射之光束LB,通過聚光透鏡CD2後被反射鏡M3往+X方向側反射。The light path of the light beam LB is bent into a zigzag shape from the light source device 14' by the reflecting mirrors M1 to M12, and then led to the absorber TR. In the following, the case where the optical elements for selection AOMn (AOM1 to AOM6) are all OFF (the state where no ultrasonic signal is applied) will be described in detail. The light beam LB (parallel light beam) from the light source device 14' travels in the +Y direction parallel to the Y axis, and then enters the mirror M1 through the condenser lens CD1. The light beam LB reflected toward the -X direction side by the mirror M1 linearly passes through the first selection optical element AOM1 disposed at the focal position (beam waist width position) of the condenser lens CD1, and becomes the collimator lens CL1 again The parallel beam reaches the mirror M2. The light beam LB reflected by the mirror M2 toward the +Y direction passes through the condenser lens CD2 and is reflected by the mirror M3 toward the +X direction.
被反射鏡M3反射之光束LB直線地透射過配置在聚光透鏡CD2之焦點位置(光束腰寬位置)之第2選擇用光學元件AOM2,藉由準直鏡CL2再次成為平行光束,到達反射鏡M4。被反射鏡M4往+Y方向側反射之光束LB,通過聚光透鏡CD3後被反射鏡M5往-X方向側反射。被反射鏡M5往-X方向側反射之光束LB直線地透射過配置在聚光透鏡CD3之焦點位置(光束腰寬位置)之第3選擇用光學元件AOM3,藉由準直鏡CL3再次成為平行光束,到達反射鏡M6。被反射鏡M6往+Y方向側反射之光束LB,通過聚光透鏡CD4後被反射鏡M7往+X方向側反射。The light beam LB reflected by the mirror M3 linearly passes through the second selection optical element AOM2 disposed at the focal position (beam waist width position) of the condenser lens CD2, and becomes a parallel beam again by the collimator CL2, and reaches the reflection Mirror M4. The light beam LB reflected by the mirror M4 toward the +Y direction side is reflected by the mirror M5 toward the −X direction side after passing through the condenser lens CD3. The light beam LB reflected by the mirror M5 toward the -X direction side linearly passes through the third selection optical element AOM3 disposed at the focal position (beam waist width position) of the condenser lens CD3, and becomes the collimator lens CL3 again The parallel beam reaches the mirror M6. The light beam LB reflected by the mirror M6 toward the +Y direction side is reflected by the mirror M7 toward the +X direction side after passing through the condenser lens CD4.
被反射鏡M7反射之光束LB直線地透射過配置在聚光透鏡CD4之焦點位置(光束腰寬位置)之第4選擇用光學元件AOM4,藉由準直鏡CL4再次成為平行光束,到達反射鏡M8。被反射鏡M8往+Y方向側反射之光束LB,通過聚光透鏡CD5後被反射鏡M9往-X方向側反射。被反射鏡M9往-X方向側反射之光束LB直線地透射過配置在聚光透鏡CD5之焦點位置(光束腰寬位置)之第5選擇用光學元件AOM5,藉由準直鏡CL5再次成為平行光束,到達反射鏡M10。被反射鏡M10往+Y方向側反射之光束LB,通過聚光透鏡CD6後被反射鏡M11往+X方向側反射。被反射鏡M11反射之光束LB直線地透射過配置在聚光透鏡CD6之焦點位置(光束腰寬位置)之第6選擇用光學元件AOM6,藉由準直鏡CL6再次成為平行光束,被反射鏡M12往-Y方向側反射後,到達吸收體TR。此吸收體TR為用以抑制光束LB往外部漏出而吸收光束LB之光吸收體。The light beam LB reflected by the mirror M7 linearly passes through the fourth selection optical element AOM4 disposed at the focal position (beam waist width position) of the condenser lens CD4, and becomes a parallel beam again by the collimator CL4, reaching the reflection Mirror M8. The light beam LB reflected by the mirror M8 toward the +Y direction side is reflected by the mirror M9 toward the −X direction side after passing through the condenser lens CD5. The light beam LB reflected by the mirror M9 toward the -X direction side linearly passes through the fifth selection optical element AOM5 disposed at the focal position (beam waist width position) of the condenser lens CD5, and becomes the collimator lens CL5 again The parallel beam reaches the mirror M10. The light beam LB reflected by the mirror M10 toward the +Y direction side passes through the condenser lens CD6 and is reflected by the mirror M11 toward the +X direction side. The light beam LB reflected by the mirror M11 linearly passes through the sixth selection optical element AOM6 disposed at the focal position (beam waist width position) of the condenser lens CD6, and becomes a parallel beam again by the collimator CL6 and is reflected The mirror M12 reflects toward the -Y direction and reaches the absorber TR. The absorber TR is a light absorber for suppressing leakage of the light beam LB to the outside and absorbing the light beam LB.
如上述,選擇用光學元件AOM1~AOM6係以來自光源裝置14’之光束LB依序透射過之方式配置,且配置成藉由聚光透鏡CD1~CD6與準直鏡CL1~CL6在各選擇用光學元件AOM1~AOM6之內部形成光束LB之光束腰寬。藉此,使射入選擇用光學元件AOM1~AOM6(聲光調變元件)之光束LB之徑變小,提高繞射效率且提高回應性。As described above, the selection optical elements AOM1~AOM6 are arranged in such a manner that the light beam LB from the light source device 14' is sequentially transmitted through, and are configured to be used for each selection by the condenser lenses CD1~CD6 and the collimator lenses CL1~CL6. The optical elements AOM1~AOM6 form the beam waist width of the beam LB. As a result, the diameter of the light beam LB incident on the selection optical elements AOM1 to AOM6 (acousto-optic modulation element) is reduced, thereby improving diffraction efficiency and responsiveness.
各選擇用光學元件AOMn(AOM1~AOM6),若施加超音波訊號(高頻訊號),則使使射入之光束LB(0次光)以對應高頻頻率之繞射角繞射之1次繞射光作為射出光束(光束LBn)產生。在本第4實施形態,設從複數個選擇用光學元件AOMn(AOM1~AOM6)之各個作為1次繞射光射出之光束LBn為光束LB1~LB6,各選擇用光學元件AOMn(AOM1~AOM6)具有使來自光源裝置14’之光束LB之光路偏向之功能。然而,如上述,實際之聲光調變元件,1次繞射光之產生效率為0次光之80%程度,因此被選擇用光學元件AOMn(AOM1~AOM6)之各個偏向之光束LB1~LB6之強度較原本之光束LB低。又,選擇用光學元件AOMn(AOM1~AOM6)之任一個為ON狀態時,不繞射而直進之0次光雖殘留20%程度,但最終地被吸收體TR吸收。Each selection optical element AOMn (AOM1~AOM6), if an ultrasonic signal (high frequency signal) is applied, the incident light beam LB (0th order light) is diffracted at a diffraction angle corresponding to the high frequency frequency. The diffracted light is generated as an outgoing light beam (beam LBn). In the fourth embodiment, it is assumed that the light beam LBn emitted from the plurality of selection optical elements AOMn (AOM1 to AOM6) as primary diffracted light is the light beams LB1 to LB6, and each selection optical element AOMn (AOM1 to AOM6) has The function of deflecting the optical path of the light beam LB from the light source device 14'. However, as mentioned above, the actual acousto-optic modulation element produces primary diffracted light with an efficiency of about 80% of that of the zero-order light. Therefore, it is chosen to use each of the deflected beams LB1~LB6 of the optical element AONn (AOM1~AOM6) The intensity is lower than the original beam LB. In addition, when any one of the optical elements for selection AOMn (AOM1 to AOM6) is in the ON state, the 0th-order light that goes straight without being diffracted remains about 20%, but is eventually absorbed by the absorber TR.
又,選擇用光學元件AOMn係藉由超音波在透射構件中之既定方向產生折射率之週期性粗密變化之繞射光柵,因此在入射光束LB為直線偏光(P偏光或S偏光)之情形,其偏光方向與繞射光柵之週期方向係設定成1次繞射光之產生效率(繞射效率)成為最高。如圖26,選擇用光學元件AOMn設置成使射入之光束LB往Z方向繞射偏向之情形,在選擇用光學元件AOMn內產生之繞射光柵之週期方向亦為Z方向,因此以與其匹配之方式設定(調整)來自光源裝置14’之光束LB之偏光方向。In addition, the optical element for selection AONn is a diffraction grating that generates periodic and coarse changes in the refractive index in a predetermined direction in the transmission member by ultrasonic waves. Therefore, when the incident light beam LB is linearly polarized (P-polarized or S-polarized), The polarization direction and the periodic direction of the diffraction grating are set so that the generation efficiency (diffraction efficiency) of primary diffraction light becomes the highest. As shown in FIG. 26, when the optical element AONn for selection is set to deflect the incident light beam LB in the Z direction, the periodic direction of the diffraction grating generated in the optical element AONn for selection is also the Z direction, so match To set (adjust) the polarization direction of the light beam LB from the light source device 14'.
再者,如圖26所示,複數個選擇用光學元件AOMn(AOM1~AOM6)之各個係設置成使偏向之光束LB1~LB6(1次繞射光)相對於射入之光束LB往-Z方向偏向。從選擇用光學元件AOMn(AOM1~AOM6)之各個偏向射出之光束LB1~LB6係投射至設在與選擇用光學元件AOMn(AOM1~AOM6)之各個分離既定距離之位置之單元側入射鏡IM1~IM6,因此以在-Z方向與照射中心軸Le1~Le6成為平行(同軸)之方式反射。被單元側入射鏡IM1~IM6(以下,僅稱為反射鏡IM1~IM6)反射之光束LB1~LB6通過形成在支承構件IUB之開口部TH1~TH6之各個,以沿著照射中心軸Le1~Le6之方式射入掃描單元Un(U1~U6)之各個。Furthermore, as shown in FIG. 26, each of the plurality of selective optical elements AOMn (AOM1~AOM6) is arranged so that the deflected light beams LB1~LB6 (first-order diffracted light) are in the -Z direction with respect to the incident light beam LB Biased. The light beams LB1~LB6 emitted from each deflection of the selection optical element AOMn (AOM1~AOM6) are projected to the unit side incident mirror IM1~ located at a position separated from each of the selection optical element AOMn(AOM1~AOM6) by a predetermined distance. IM6 is therefore reflected in such a way that it is parallel (coaxial) with the irradiation central axes Le1 to Le6 in the -Z direction. The light beams LB1~LB6 reflected by the unit-side incident mirrors IM1~IM6 (hereinafter, simply referred to as mirrors IM1~IM6) pass through the openings TH1~TH6 formed in the support member IUB to follow the irradiation center axis Le1~Le6 Into the scanning units Un (U1~U6).
亦可使用各選擇用光學元件AOMn(AOM1~AOM6)之構成、功能、作用等彼此相同者。複數個選擇用光學元件AOMn(AOM1~AOM6)依據來自控制裝置18之驅動訊號(高頻訊號)之ON/OFF,使使射入之光束LB繞射之繞射光之產生ON/OFF。例如,選擇用光學元件AOM1,在未施加來自控制裝置18之驅動訊號(高頻訊號)而為OFF狀態時,不使射入之光束LB繞射而透射過。是以,透射過選擇用光學元件AOM1之光束LB透射過準直鏡CL1後射入反射鏡M2。另一方面,選擇用光學元件AOM1,在施加來自控制裝置18之驅動訊號而為ON狀態時,使射入之光束LB繞射而朝向反射鏡IM1。亦即,藉由此驅動訊號切換選擇用光學元件AOM1。反射鏡IM1使藉由選擇用光學元件AOM1繞射之光束LB1反射至掃描單元U1側。被反射鏡IM1反射之光束LB1通過支承構件IUB之開口部TH1沿著照射中心軸Le1射入掃描單元U1。是以,反射鏡IM1以反射之光束LB1之光軸與照射中心軸Le1成為同軸之方式反射射入之光束LB1。又,在選擇用光學元件AOM1為ON狀態時,直線地透射過選擇用光學元件AOM1之光束LB之0次光(入射光束之20%程度之強度),透射過其後之準直鏡CL1~CL6、聚光透鏡CD2~CD6、反射鏡M2~M12、及選擇用光學元件AOM2~AOM6。It is also possible to use the same configuration, function, function, etc. of the optical elements for selection AOMn (AOM1~AOM6). A plurality of selection optical elements AOMn (AOM1~AOM6) turn ON/OFF the diffracted light diffracted by the incident light beam LB according to the ON/OFF of the driving signal (high frequency signal) from the
圖27A係從+Z方向側觀察選擇用光學元件AOM1進行之光束LB之光路切換之圖,圖27B係從-Y方向側觀察選擇用光學元件AOM1進行之光束LB之光路切換之圖。在驅動訊號為OFF之狀態時,選擇用光學元件AOM1不使射入之光束LB繞射而使其直接朝向反射鏡M2側透射過。另一方面,在驅動訊號為ON之狀態時,選擇用光學元件AOM1產生使射入之光束LB往-Z方向側繞射之光束LB1,使其朝向反射鏡IM1。是以,在XY平面內,不改變從選擇用光學元件AOM1射出之光束LB(0次光)及偏向之光束LB1(1次繞射光)之行進方向,在Z方向,改變光束LB1(1次繞射光)之行進方向。如上述,控制裝置18,藉由使待施加於選擇用光學元件AOM1之驅動訊號(高頻訊號)ON/OFF(高/低),切換選擇用光學元件AOM1,切換光束LB是否朝向後續之選擇用光學元件AOM2、偏向之光束LB1是否朝向掃描單元U1。FIG. 27A is a view of the optical path switching of the light beam LB by the selection optical element AOM1 viewed from the +Z direction side, and FIG. 27B is a view of the optical path switching of the light beam LB by the selection optical element AOM1 viewed from the -Y direction side. When the driving signal is OFF, the selection optical element AOM1 does not diffract the incident light beam LB but transmits it directly toward the mirror M2 side. On the other hand, when the drive signal is ON, the selection optical element AOM1 generates the light beam LB1 that diffracts the incident light beam LB toward the -Z direction side, and makes it face the mirror IM1. Therefore, in the XY plane, the traveling directions of the light beam LB (0th order light) and the deflected light beam LB1 (1st diffracted light) emitted from the selection optical element AOM1 are not changed, and the light beam LB1 (1st order) is changed in the Z direction Diffraction light). As described above, the
同樣地,選擇用光學元件AOM2,在來自控制裝置18之驅動訊號(高頻訊號)為OFF狀態時,不使射入之光束LB(未被選擇用光學元件AOM1繞射而透射過而來之光束LB)繞射而透射過至準直鏡CL2側(反射鏡M4側),在來自控制裝置18之驅動訊號為ON狀態時,使射入之光束LB之繞射光即光束LB2朝向反射鏡IM2。此反射鏡IM2使藉由選擇用光學元件AOM2繞射之光束LB2反射至掃描單元U2側。被反射鏡IM2反射之光束LB2通過支承構件IUB之開口部TH2與照射中心軸Le2成為同軸而射入掃描單元U2。再者,選擇用光學元件AOM3~AOM6,在來自控制裝置18之驅動訊號(高頻訊號)為OFF狀態時,不使射入之光束LB繞射而透射過至準直鏡CL3~CL6側(反射鏡M6, M8, M10, M12側),在來自控制裝置18之驅動訊號為ON狀態時,使射入之光束LB之1次繞射光即光束LB3~LB6朝向反射鏡IM3~IM6。此反射鏡IM3~IM6使藉由選擇用光學元件AOM3~AOM6繞射之光束LB3~LB6反射至掃描單元U3~U6側。被反射鏡IM3~IM6反射之光束LB3~LB6通過支承構件IUB之開口部TH3~TH6之各個與照射中心軸Le3Le6成為同軸而射入掃描單元U3~U6。如上述,控制裝置18,藉由使待施加於選擇用光學元件AOM2~AOM6之各個之驅動訊號(高頻訊號)ON/OFF(高/低),切換選擇用光學元件AOM2~AOM6之任一個,切換光束LB是否朝向後續之選擇用光學元件AOM3~AOM6或吸收體TR、偏向之光束LB2~LB6之一個是否朝向對應之掃描單元U2~U6。Similarly, the selection optical element AOM2 does not transmit the incident light beam LB (which is not diffracted by the selection optical element AOM1 and passes through when the drive signal (high-frequency signal) from the
如上述,光束切換構件20具備沿著來自光源裝置14’之光束LB之行進方向直列配置之複數個選擇用光學元件AOMn(AOM1~AOM6),藉此可切換光束LB之光路,選擇一個光束LBn射入之掃描單元Un。例如,欲使光束LB1射入掃描單元U1時,使選擇用光學元件AOM1成為ON狀態,欲使光束LB3射入掃描單元U3時,使選擇用光學元件AOM3成為ON狀態即可。此複數個選擇用光學元件AOMn(AOM1~AOM6)係對應複數個掃描單元Un(U1~U6)設置,切換是否使光束LBn射入對應之掃描單元Un。As described above, the light
複數個掃描單元Un(U1~U6)反覆以既定順序進行點光SP之掃描之動作,因此光束切換構件20亦對應此,切換光束LB1~LB6之任一個射入之掃描單元U1~U6。例如,進行點光SP之掃描之掃描單元Un之順序為U1→U2→…→U6之情形,光束切換構件20亦對應此,以U1→U2→…→U6之順序切換光束LBn射入之掃描單元Un。A plurality of scanning units Un(U1~U6) repeatedly scan the spot light SP in a predetermined order, so the
根據上述說明,光束切換構件20之各選擇用光學元件AOMn(AOM1~AOM6),只要在掃描單元Un(U1~U6)之各個之多面鏡PM進行之點光SP之一次掃描期間為ON狀態即可。詳細將於後述,但若設多面鏡PM之反射面數為Np、多面鏡PM之旋轉速度為Vp(rpm),則對應多面鏡PM之反射面RP之一面之旋轉角度之時間Tss成為Tss=60/(Np・Vp)秒。例如,反射面數為8、旋轉速度Vp為3萬之情形,多面鏡PM之一旋轉為2毫秒,時間Tss成為0.25毫秒。若將其換算成頻率則為4kHz,意指相較於將紫外域之波長之光束LB回應描繪資料以數十MHz程度高速調變之聲光調變元件,為回應頻率非常低之聲光調變元件即可。因此,能使用相對於射入之光束LB(0次光)偏向之光束LB1~LB6(1次繞射光)之繞射角較大者,將相對於直線地通過選擇用光學元件AOM1~AOM6之光束LB之進路偏向之光束LB1~LB6加以分離之反射鏡IM1~IM6(圖26、圖27A、圖27B)之配置變容易。According to the above description, each selection optical element AOMn (AOM1~AOM6) of the
此外,複數個掃描單元U1~U6反覆以既定順序逐次進行點光SP之掃描之動作,因此對應地,各掃描單元Un之圖案資料之序列資料DLn以既定順序輸出至光源裝置14’之驅動電路206a。將此依序輸出至驅動電路206a之序列資料DLn稱為描繪位元列資料Sdw。例如,在既定順序為U1→U2→…→U6之情形,首先,一列之序列資料DL1輸出至驅動電路206a,接著,一列之序列資料DL2輸出至驅動電路206a,以此方式,構成描繪位元列資料Sdw之一列序列資料DL1~DL6依序輸出至驅動電路206a。之後,下一列之序列資料DL1~DL6作為描繪位元列資料Sdw依序輸出至驅動電路206a。對此驅動電路206a輸出描繪位元列資料Sdw之具體構成,將在之後詳細說明。In addition, a plurality of scanning units U1 to U6 repeatedly scan the spot light SP in a predetermined order, so correspondingly, the sequence data DLn of the pattern data of each scanning unit Un is output to the driving circuit of the light source device 14' in a
掃描單元Un(U1~U6)之構成,亦可為在上述第1~第3實施形態使用者,但在本第4實施形態,使用圖28所示之構成之掃描單元Un。又,亦可將以下說明之掃描單元Un作為上述第1~第3實施形態之掃描單元使用。The configuration of the scanning unit Un (U1 to U6) may be the user in the first to third embodiments described above, but in the fourth embodiment, the scanning unit Un with the configuration shown in FIG. 28 is used. In addition, the scanning unit Un described below may be used as the scanning unit in the first to third embodiments described above.
以下,參照圖28說明在第4實施形態使用之掃描單元Un(U1~U6)之光學構成。此外,各掃描單元Un(U1~U6)具有相同構成,因此僅說明掃描單元U1,關於其他掃描單元Un則省略其說明。又,圖28中,設與照射中心軸Len(Le1)平行之方向為Zt方向、在與Zt方向正交之平面上且基板FS從程序裝置PR1經由曝光裝置EX朝向程序裝置PR2之方向為Xt方向、在與Zt方向正交之平面上且與Xt正交之方向為Yt方向。亦即,圖28之Xt、Yt、Zt之三維座標,係使圖23之X、Y、Z之三維座標旋轉成Z軸方向以Y軸為中心與照射中心軸Len(Le1)成為平行之三維座標。The optical configuration of the scanning unit Un (U1 to U6) used in the fourth embodiment will be described below with reference to FIG. 28. In addition, since each scanning unit Un (U1 to U6) has the same configuration, only the scanning unit U1 will be described, and the description of other scanning units Un will be omitted. Moreover, in FIG. 28, let the direction parallel to the irradiation center axis Len (Le1) be the Zt direction, and the direction on the plane orthogonal to the Zt direction and the substrate FS from the process device PR1 to the process device PR2 via the exposure device EX is Xt The direction, the direction on the plane orthogonal to the Zt direction and orthogonal to Xt is the Yt direction. That is, the three-dimensional coordinates of Xt, Yt, and Zt in FIG. 28 rotate the three-dimensional coordinates of X, Y, and Z in FIG. 23 into a Z-axis direction. The Y axis is the center and the irradiation center axis Len (Le1) becomes a three-dimensional parallel coordinate.
如圖28所示,在掃描單元U1內,沿著光束LB1之入射位置至基板FS之被照射面之光束LB1之行進方向,設有反射鏡M20、光束放大器BE、反射鏡M21、偏光分束器BS、反射鏡M22、移像光學構件SR、場域光闌FA、反射鏡M23、λ/4波長板QW、圓柱狀透鏡CYa、反射鏡M24、多面鏡PM、fθ透鏡FT、反射鏡M25、圓柱狀透鏡CYb。再者,在掃描單元U1內設有用以透過偏光分束器BS檢測來自基板FS之被照射面之反射光之光學透鏡G10及光檢測器DT1。As shown in FIG. 28, in the scanning unit U1, along the traveling direction of the light beam LB1 from the incident position of the light beam LB1 to the illuminated surface of the substrate FS, a reflecting mirror M20, a beam amplifier BE, a reflecting mirror M21, and a polarization beam splitting are provided BS, mirror M22, image shifting optical member SR, field diaphragm FA, mirror M23, λ/4 wavelength plate QW, cylindrical lens CYa, mirror M24, polygon mirror PM, fθ lens FT, mirror M25 , Cylindrical lens CYb. Furthermore, the scanning unit U1 is provided with an optical lens G10 and a photodetector DT1 for detecting the reflected light from the illuminated surface of the substrate FS through the polarizing beam splitter BS.
射入掃描單元U1之光束LB1朝向-Zt方向行進,射入相對於XtYt平面傾斜45°之反射鏡M20。射入此掃描單元U1之光束LB1之軸線以與照射中心軸Le1成為同軸之方式射入反射鏡M20。反射鏡M20,作為使光束LB1射入掃描單元U1之入射光學構件而作用,使射入之光束LB1沿著設定成與Xt軸平行之光軸朝向反射鏡M21往-Xt方向反射。是以,與Xt軸平行地行進之光束LB1之光軸,在與XtZt平面平行之面內與照射中心軸Le1正交。被反射鏡M20反射之光束LB1透射過沿著與Xt軸平行地行進之光束LB1之光軸配置之光束放大器BE而射入反射鏡M21。光束放大器BE使透射過之光束LB1之徑放大。光束放大器BE具有聚光透鏡Be1、及使被聚光透鏡Be1收斂後散射之光束LB1成為平行光之準直鏡Be2。The light beam LB1 incident on the scanning unit U1 travels in the -Zt direction and enters the mirror M20 inclined by 45° with respect to the XtYt plane. The axis of the light beam LB1 incident on the scanning unit U1 enters the mirror M20 so as to be coaxial with the irradiation central axis Le1. The reflection mirror M20 functions as an incident optical member that causes the light beam LB1 to enter the scanning unit U1, and reflects the incident light beam LB1 toward the reflection mirror M21 along the optical axis set parallel to the Xt axis in the -Xt direction. Therefore, the optical axis of the light beam LB1 traveling parallel to the Xt axis is orthogonal to the irradiation center axis Le1 in a plane parallel to the XtZt plane. The light beam LB1 reflected by the mirror M20 transmits the beam amplifier BE disposed along the optical axis of the light beam LB1 traveling parallel to the Xt axis and enters the mirror M21. The beam amplifier BE amplifies the diameter of the transmitted beam LB1. The beam amplifier BE has a condenser lens Be1, and a collimator lens Be2 that makes the beam LB1 scattered by the condenser lens Be1 converge into parallel light.
反射鏡M21相對於YtZt平面傾斜45°配置,使射入之光束LB1朝向偏光分束器BS往-Yt方向反射。偏光分束器BS之偏光分離面相對於YtZt平面傾斜45°配置,使P偏光之光束反射,使往與P偏光正交之方向偏光之直線偏光(S偏光)之光束透射過。由於射入掃描單元U1之光束LB1為P偏光之光束,因此偏光分束器BS使來自反射鏡M21之光束LB1往-X方向反射並導至反射鏡M22側。The reflecting mirror M21 is arranged at an angle of 45° with respect to the YtZt plane, and reflects the incident light beam LB1 toward the polarizing beam splitter BS in the -Yt direction. The polarization separation surface of the polarizing beam splitter BS is inclined at 45° with respect to the YtZt plane to reflect the beam of P-polarized light and transmit the beam of linearly polarized light (S-polarized light) polarized in a direction orthogonal to the P-polarized light. Since the light beam LB1 entering the scanning unit U1 is a P-polarized light beam, the polarization beam splitter BS reflects the light beam LB1 from the mirror M21 toward the -X direction and guides it to the mirror M22 side.
反射鏡M22相對於XtYt平面傾斜45°配置,使射入之光束LB1朝向與反射鏡M22在-Zt方向分離之反射鏡M23往-Zt方向反射。被反射鏡M22反射之光束LB1沿著與Zt軸平行之光軸通過移像光學構件SR及場域光闌(視野光闌)FA射入反射鏡M23。移像光學構件SR,在與光束LB1之行進方向正交之平面(XtYt平面)內,二維地調整光束LB1之剖面內之中心位置。移像光學構件SR,係以沿著與Zt軸平行地行進之光束LB1之光軸配置之二片石英之平行平板Sr1, Sr2構成,平行平板Sr1可繞Xt軸傾斜,平行平板Sr2可繞Yt軸傾斜。此平行平板Sr1, Sr2分別繞Xt軸、Yt軸傾斜,藉此,在與光束LB1之行進方向正交之XtYt平面,使光束LB1之中心之位置二維地微量偏移。此平行平板Sr1, Sr2,在控制裝置18之控制下,藉由未圖示之致動器(驅動部)驅動。The reflecting mirror M22 is arranged at an angle of 45° with respect to the XtYt plane, so that the incident light beam LB1 reflects toward the reflecting mirror M23 separated from the reflecting mirror M22 in the -Zt direction in the -Zt direction. The light beam LB1 reflected by the mirror M22 enters the mirror M23 through the image shifting optical member SR and the field diaphragm (field diaphragm) FA along the optical axis parallel to the Zt axis. The image-shifting optical member SR adjusts the center position in the cross section of the light beam LB1 two-dimensionally in a plane (XtYt plane) orthogonal to the traveling direction of the light beam LB1. The image-shifting optical member SR is composed of two quartz parallel flat plates Sr1 and Sr2 arranged along the optical axis of the light beam LB1 traveling parallel to the Zt axis. The parallel flat plate Sr1 can be tilted around the Xt axis and the parallel flat plate Sr2 can be wrapped around Yt The axis is tilted. The parallel flat plates Sr1, Sr2 are inclined around the Xt axis and the Yt axis, respectively, thereby slightly shifting the position of the center of the light beam LB1 two-dimensionally on the XtYt plane orthogonal to the traveling direction of the light beam LB1. The parallel plates Sr1 and Sr2 are driven by an actuator (driving unit) not shown under the control of the
通過移像光學構件SR之光束LB1透射過場域光闌FA之圓形開口到達反射鏡M23。場域光闌FA之圓形開口係遮蔽被光束放大器BE放大之光束LB1之剖面內之強度分布之周邊部分之光闌。若使場域光闌FA之圓形開口之口徑為可調整之可變虹形光闌,則能調整點光SP之強度(亮度)。The light beam LB1 passing through the image shifting optical member SR passes through the circular opening of the field diaphragm FA and reaches the mirror M23. The circular opening of the field diaphragm FA shields the peripheral portion of the intensity distribution in the cross section of the beam LB1 amplified by the beam amplifier BE. If the aperture of the circular opening of the field diaphragm FA is an adjustable variable iris diaphragm, the intensity (brightness) of the spot light SP can be adjusted.
反射鏡M23相對於XtYt平面傾斜45°配置,使射入之光束LB1朝向與反射鏡M23在+Zt方向分離之反射鏡M24往+Zt方向反射。被反射鏡M23反射之光束LB1透射過λ/4波長板QW及圓柱狀透鏡CYa射入反射鏡M24。反射鏡M24使射入之光束LB1朝向多面鏡(旋轉多面鏡、掃描用偏向構件)PM反射。多面鏡PM使射入之光束LB1朝向具有與Xt軸平行之光軸AXf之fθ透鏡FT往+Xt方向反射。多面鏡PM,為了使光束LB1之點光SP在基板FS之被照射面上掃描,使射入之光束LB1在與XtYt平面平行之面內偏向(反射)。具體而言,多面鏡PM具有往Zt軸方向延伸之旋轉軸AXp、及繞旋轉軸AXp形成之複數個反射面RP(在本第4實施形態為八個反射面RP)。藉由使此多面鏡PM以旋轉軸AXp為中心往既定旋轉方向旋轉,能使照射至反射面RP之脈衝狀之光束LB1之入射角連續地變化。藉此,藉由一個反射面RP使光束LB1之反射方向偏向,能使照射至基板FS之被照射面上之光束LB1之點光SP沿著掃描方向(基板FS之寬方向、Yt方向)掃描。The reflecting mirror M23 is arranged at an angle of 45° with respect to the XtYt plane, so that the incident light beam LB1 reflects toward the reflecting mirror M24 separated from the reflecting mirror M23 in the +Zt direction in the +Zt direction. The light beam LB1 reflected by the mirror M23 passes through the λ/4 wavelength plate QW and the cylindrical lens CYa and enters the mirror M24. The reflecting mirror M24 reflects the incident light beam LB1 toward the polygon mirror (rotating polygon mirror, scanning deflection member) PM. The polygon mirror PM reflects the incident light beam LB1 toward the +Xt direction toward the fθ lens FT having an optical axis AXf parallel to the Xt axis. In the polygon mirror PM, in order to scan the spot light SP of the light beam LB1 on the illuminated surface of the substrate FS, the incident light beam LB1 is deflected (reflected) in a plane parallel to the XtYt plane. Specifically, the polygon mirror PM has a rotation axis AXp extending in the Zt axis direction, and a plurality of reflection surfaces RP formed around the rotation axis AXp (eight reflection surfaces RP in the fourth embodiment). By rotating the polygon mirror PM in the predetermined rotation direction about the rotation axis AXp, the incident angle of the pulsed light beam LB1 irradiated to the reflection surface RP can be continuously changed. By this, the reflection direction of the light beam LB1 is deflected by one reflection surface RP, so that the spot light SP of the light beam LB1 irradiated on the irradiated surface of the substrate FS can be scanned along the scanning direction (the width direction of the substrate FS, the Yt direction) .
藉由一個反射面RP能使光束LB1之點光SP沿著描繪線SL1掃描。因此,以多面鏡PM之一次旋轉,點光SP在基板FS之被照射面上掃描之描繪線之數最大與反射面RP之數相同成為八條。多面鏡PM藉由包含馬達等之多面鏡驅動部RM以一定速度旋轉。多面鏡驅動部RM進行之多面鏡PM之旋轉被控制裝置18控制。如上述,描繪線SL1之實效長度(例如,30mm)係設定在可藉由此多面鏡PM使點光SP掃描之最大掃描長度(例如,31mm)以下之長度,在初始設定(設計上),在最大掃描長度之中央設定有描繪線SL1之中心點(照射中心軸Le1通過)。The spot light SP of the light beam LB1 can be scanned along the drawing line SL1 by a reflecting surface RP. Therefore, with one rotation of the polygon mirror PM, the maximum number of trace lines scanned by the spot light SP on the illuminated surface of the substrate FS is the same as the number of reflection surfaces RP, which becomes eight. The polygon mirror PM is rotated at a constant speed by a polygon mirror drive part RM including a motor or the like. The rotation of the polygon mirror PM by the polygon mirror drive unit RM is controlled by the
此外,作為一例,設描繪線SL1之實效長度為30mm,一邊使實效尺寸ø為3μm之點光SP以1.5μm逐一重疊、一邊使點光SP沿著描繪線SL1照射至基板FS之被照射面上時,以一次掃描照射之點光SP之數(來自光源裝置14’之光束LB之脈衝數)成為20000(30mm/1.5μm)。又,若設沿著描繪線SL1之點光SP之掃描時間為200μsec,則必須在此期間照射20000次脈衝狀之點光SP,因此光源裝置14’之發光頻率Fs成為Fs≧20000次/200μsec=100MHz。In addition, as an example, the effective length of the drawing line SL1 is set to 30 mm, and while the spot light SP having an effective size ø of 3 μm is superimposed one by one at 1.5 μm, the spot light SP is irradiated to the irradiated surface of the substrate FS along the drawing line SL1 At the time of the above, the number of spot light SP irradiated by one scan (the number of pulses of the light beam LB from the light source device 14') becomes 20000 (30mm/1.5μm). Also, if the scanning time of the spot light SP along the drawing line SL1 is 200 μsec, it is necessary to irradiate the pulsed spot light SP 20,000 times during this period, so the light emission frequency Fs of the
圓柱狀透鏡CYa,在與多面鏡PM之掃描方向(旋轉方向)正交之非掃描方向(Z方向)使射入之光束LB1在多面鏡PM之反射面RP上收斂成狹縫狀。藉由此母線與Yt方向平行之圓柱狀透鏡CYa,即使反射面RP相對於Zt方向傾斜之情形(反射面RP相對於XtYt平面之法線之傾斜),亦可抑制其影響,可抑制照射至基板FS之被照射面上之光束LB1之照射位置在Xt方向錯開。The cylindrical lens CYa converges the incident light beam LB1 into a slit shape on the reflection surface RP of the polygon mirror PM in a non-scanning direction (Z direction) orthogonal to the scanning direction (rotation direction) of the polygon mirror PM. With the cylindrical lens CYa whose generatrix is parallel to the Yt direction, even if the reflecting surface RP is inclined with respect to the Zt direction (the inclination of the reflecting surface RP with respect to the normal of the XtYt plane), its influence can be suppressed and the irradiation to the The irradiation position of the light beam LB1 on the illuminated surface of the substrate FS is shifted in the Xt direction.
具有往Xt軸方向延伸之光軸AXf之fθ透鏡FT,係將藉由多面鏡PM反射之光束LB1在XtYt平面以與光軸AXf平行之方式投射至反射鏡25之遠心系掃描透鏡。光束LB1對fθ透鏡FT之入射角θ係依據多面鏡PM之旋轉角(θ/2)變化。fθ透鏡FT透過反射鏡M25及圓柱狀透鏡CYb將光束LB1投射至與其入射角θ成正比之基板FS之被照射面上之像高位置。設焦點距離為fo、像高位置為y,則fθ透鏡FT設計成滿足y=fo・θ之關係。是以,能藉由此fθ透鏡FT使光束LB1(點光SP)往Yt方向(Y方向)正確且等速地掃描。在對fθ透鏡FT之入射角θ為0度時,射入fθ透鏡FT之光束LB1沿著光軸AXf上行進。The fθ lens FT having an optical axis AXf extending in the Xt axis direction is a telecentric scanning lens that projects the light beam LB1 reflected by the polygon mirror PM on the XtYt plane to the mirror 25 in a manner parallel to the optical axis AXf. The incident angle θ of the light beam LB1 to the fθ lens FT varies according to the rotation angle (θ/2) of the polygon mirror PM. The fθ lens FT projects the light beam LB1 through the mirror M25 and the cylindrical lens CYb to the image height position on the illuminated surface of the substrate FS proportional to its incident angle θ. Assuming that the focal distance is fo and the image height position is y, the fθ lens FT is designed to satisfy the relationship of y=fo·θ. Therefore, the light beam LB1 (spot light SP) can be accurately and uniformly scanned in the Yt direction (Y direction) by the fθ lens FT. When the incident angle θ to the fθ lens FT is 0 degrees, the light beam LB1 incident on the fθ lens FT travels along the optical axis AXf.
反射鏡M25使射入之光束LB1透過圓柱狀透鏡CYb朝向基板FS反射向-Zt方向。藉由fθ透鏡FT及母線與Yt方向平行之圓柱狀透鏡CYb,透射至基板FS之光束LB1在基板FS之被照射面上收斂成直徑數μm程度(例如,3μm)之微小點光SP。又,透射至基板FS之被照射面上之點光SP,藉由多面鏡PM,藉由往Yt方向延伸之描繪線SL1一維掃描。此外,fθ透鏡FT之光軸AXf與照射中心軸Le1位於同一平面上,該平面與XtZt平面平行。是以,在光軸AXf上行進之光束LB1藉由反射鏡M25往-Zt方向反射,與照射中心軸Le1成為同軸而投射至基板FS。在本第4實施形態,至少fθ透鏡FT具有將被多面鏡PM偏向之光束LB1投射至基板FS之被照射面之投射光學系之功能。又,至少反射構件(反射鏡M21~M25)及偏光分束器BS具有將反射鏡M20至基板FS之光束LB1之光路彎折之光路偏向構件。藉由此光路偏向構件能使射入反射鏡M20之光束LB1之入射軸與照射中心軸Le1成為大致同軸。在XtZt平面,通過掃描單元U1內之光束LB1,在通過大致U字狀或コ字狀之光路後,往-Zt方向行進投射至基板FS。The mirror M25 reflects the incident light beam LB1 through the cylindrical lens CYb toward the substrate FS in the -Zt direction. With the fθ lens FT and the cylindrical lens CYb whose generatrix is parallel to the Yt direction, the light beam LB1 transmitted to the substrate FS converges to a spot light SP having a diameter of several μm (for example, 3 μm) on the illuminated surface of the substrate FS. The spot light SP transmitted to the illuminated surface of the substrate FS is scanned one-dimensionally by the polygon mirror PM and by the drawing line SL1 extending in the Yt direction. In addition, the optical axis AXf of the fθ lens FT is on the same plane as the irradiation center axis Le1, which is parallel to the XtZt plane. Therefore, the light beam LB1 traveling on the optical axis AXf is reflected by the mirror M25 in the -Zt direction, and is coaxial with the irradiation central axis Le1 and is projected onto the substrate FS. In the fourth embodiment, at least the fθ lens FT has the function of a projection optical system that projects the light beam LB1 deflected by the polygon mirror PM to the illuminated surface of the substrate FS. Furthermore, at least the reflecting member (reflecting mirrors M21 to M25) and the polarizing beam splitter BS have an optical path deflecting member that bends the optical path of the light beam LB1 from the reflecting mirror M20 to the substrate FS. With this optical path deflecting member, the incident axis of the light beam LB1 incident on the mirror M20 can be substantially coaxial with the irradiation center axis Le1. In the XtZt plane, the light beam LB1 passing through the scanning unit U1 passes through a substantially U-shaped or U-shaped optical path, and then travels toward the -Zt direction and is projected onto the substrate FS.
如上述,在基板FS往X方向搬送之狀態下,藉由各掃描單元Un(U1~U6)使光束LBn之點光SP往掃描方向(Y方向)一維掃描,藉此,能使點光SP在基板FS之被照射面相對地二維掃描。是以,能在基板FS之曝光區域W描繪曝光既定圖案。As described above, in a state where the substrate FS is transported in the X direction, the spot light SP of the light beam LBn is scanned one-dimensionally in the scanning direction (Y direction) by each scanning unit Un (U1 to U6), thereby enabling spot light SP scans relatively two-dimensionally on the illuminated surface of the substrate FS. Therefore, a predetermined exposure pattern can be drawn on the exposure area W of the substrate FS.
光檢測器DT1具有對入射光進行光電轉換之光電轉換元件。在旋轉筒DR之表面形成有預先決定之基準圖案。形成有此基準圖案之旋轉筒DR上之部分係以對光束LB1之波長域較低反射率(10~50%)之素材構成,未形成基準圖案之旋轉筒DR上之其他部分係以反射率10%以下之材料或吸收光之材料構成。因此,在未捲繞基板FS之狀態下(或通過基板FS之透明部之狀態),從掃描單元U1對旋轉筒DR之形成有基準圖案之區域照射光束LB1之點光SP後,其反射光通過圓柱狀透鏡CYb、反射鏡M25、fθ透鏡FT、多面鏡PM、反射鏡M24、圓柱狀透鏡CYa、λ/4波長板QW、反射鏡M23、場域光闌FA、移像光學構件SR、及反射鏡M22後射入偏光分束器BS。此處,在偏光分束器BS與基板FS之間,具體而言,在反射鏡M23與圓柱狀透鏡CYa之間設有λ/4波長板QW。藉此,照射至基板FS之光束LB1藉由此λ/4波長板QW從P偏光轉換成圓偏光,從基板FS射入偏光分束器BS之反射光藉由此λ/4波長板QW從圓偏光轉換成S偏光。是以,來自基板FS之反射光透射過偏光分束器BS,透過光學透鏡系G10射入光檢測器DT1。The photodetector DT1 has a photoelectric conversion element that photoelectrically converts incident light. A predetermined reference pattern is formed on the surface of the rotating drum DR. The part on the rotating drum DR on which the reference pattern is formed is composed of a material with a lower reflectivity (10 to 50%) to the wavelength range of the light beam LB1, and the other part on the rotating drum DR on which the reference pattern is not formed is on the reflectance It is composed of less than 10% of materials or materials that absorb light. Therefore, in a state where the substrate FS is not wound (or a state passing through the transparent portion of the substrate FS), the spot light SP of the light beam LB1 is irradiated from the scanning unit U1 to the area of the rotating drum DR where the reference pattern is formed, and the reflected light Cylindrical lens CYb, mirror M25, fθ lens FT, polygon mirror PM, mirror M24, cylindrical lens CYa, λ/4 wavelength plate QW, mirror M23, field diaphragm FA, image shifting optical member SR, And the mirror M22 enters the polarizing beam splitter BS. Here, a λ/4 wavelength plate QW is provided between the polarizing beam splitter BS and the substrate FS, specifically, between the mirror M23 and the cylindrical lens CYa. Thereby, the light beam LB1 irradiated to the substrate FS is converted from P-polarized light to circularly polarized light by the λ/4 wavelength plate QW, and the reflected light entering the polarizing beam splitter BS from the substrate FS is converted by the λ/4 wavelength plate QW from Circular polarized light is converted into S polarized light. Therefore, the reflected light from the substrate FS passes through the polarizing beam splitter BS, and enters the photodetector DT1 through the optical lens system G10.
此時,在脈衝狀之光束LB1(較佳為,來自種光S1之光束LB1)連續地射入掃描單元U1之狀態下,藉由旋轉筒DR旋轉,掃描單元U1使點光SP掃描,點光SP二維地照射至旋轉筒DR之外周面。是以,可藉由光檢測器DT1取得形成在旋轉筒DR之基準圖案之影像。具體而言,使從光檢測器DT1輸出之光電訊號之強度變化回應用於點光SP之脈衝發光之時脈脈衝訊號(在光源裝置14’內產生),就各掃描時間進行數位取樣,取得為Yt方向之一維影像資料,再者,回應測量旋轉筒DR之旋轉角度位置之編碼器ENn之測量值,就副掃描方向之一定距離(例如,點光SP之尺寸ø之1/2),將Yt方向之一維影像資料排列在Xt方向,藉此取得旋轉筒DR之表面之二維影像資訊。控制裝置18,根據此取得之旋轉筒DR之基準圖案之二維影像資訊,測量掃描單元U1之描繪線SL1之傾斜。此描繪線SL1之傾斜可為在各掃描單元Un(U1~U6)間之相對傾斜,亦可為相對於旋轉筒DR之中心軸AXo之傾斜(絕對傾斜)。此外,同樣地,當然亦可測量各描繪線SL2~SL6之傾斜。At this time, in a state where the pulsed light beam LB1 (preferably, the light beam LB1 from the seed light S1) continuously enters the scanning unit U1, the scanning unit U1 scans the spot light SP by rotating the rotating cylinder DR The light SP is irradiated to the outer peripheral surface of the rotating drum DR two-dimensionally. Therefore, the image of the reference pattern formed on the rotating drum DR can be obtained by the photodetector DT1. Specifically, the intensity change of the photoelectric signal output from the photodetector DT1 responds to the clock pulse signal (generated in the light source device 14') used for the point light SP to emit light, and digitally samples each scanning time to obtain It is one-dimensional image data in the Yt direction. Furthermore, in response to the measurement value of the encoder ENn that measures the rotation angle position of the rotating cylinder DR, a certain distance in the sub-scanning direction (for example, 1/2 of the size ø of the spot light SP) , Arrange the one-dimensional image data in the Yt direction in the Xt direction, thereby obtaining the two-dimensional image information on the surface of the rotating drum DR. The
在掃描單元U1之多面鏡PM周邊,如圖29所示,設有原點感測器(原點檢測器)OP1。原點感測器OP1輸出表示各反射面RP之點光SP之掃描開始之脈衝狀之原點訊號SZ。原點感測器OP1,在多面鏡PM之旋轉位置來到反射面RP之點光SP之掃描開始前一刻之既定位置後,輸出原點訊號SZ。多面鏡PM,在掃描角度範圍θs,能使投射至基板FS之光束LB1偏向,因此若被多面鏡PM反射之光束LB1之反射方向(偏向方向)成為掃描角度範圍θs內,則反射之光束LB1射入fθ透鏡FT。是以,原點感測器OP1,在多面鏡PM之旋轉位置來到被反射面RP反射之光束LB1之反射方向進入掃描角度範圍θs內前一刻之既定位置後,輸出原點訊號SZ。此外,掃描角度範圍θs與圖7所示之最大掃描旋轉角度範圍α具有θs=2×α之關係。Around the polygon mirror PM of the scanning unit U1, as shown in FIG. 29, an origin sensor (origin detector) OP1 is provided. The origin sensor OP1 outputs a pulse-shaped origin signal SZ indicating that the scanning of the spot light SP of each reflection surface RP starts. The origin sensor OP1 outputs the origin signal SZ after the rotation position of the polygon mirror PM comes to the predetermined position immediately before the scanning of the spot light SP of the reflection surface RP starts. The polygon mirror PM can deflect the light beam LB1 projected onto the substrate FS in the scanning angle range θs. Therefore, if the reflection direction (deflection direction) of the light beam LB1 reflected by the polygon mirror PM becomes within the scanning angle range θs, the reflected light beam LB1 Enter the fθ lens FT. Therefore, the origin sensor OP1 comes to the origin position signal SZ after the reflection direction of the light beam LB1 reflected by the reflection surface RP enters the predetermined position within the scan angle range θs at the rotation position of the polygon mirror PM. In addition, the scan angle range θs and the maximum scan rotation angle range α shown in FIG. 7 have a relationship of θs=2×α.
由於多面鏡PM具有八個反射面RP,因此原點感測器OP1在多面鏡PM旋轉一次之期間輸出八次原點訊號SZ。此原點感測器OP1檢測出之原點訊號SZ傳送至控制裝置18。原點感測器OP1輸出原點訊號SZ後,開始點光SP沿著描繪線SL1之掃描。Since the polygon mirror PM has eight reflection surfaces RP, the origin sensor OP1 outputs eight origin signals SZ during one rotation of the polygon mirror PM. The origin signal SZ detected by the origin sensor OP1 is sent to the
原點感測器OP1使用接著進行點光SP之掃描(光束LB1之偏向)之反射面RP相鄰之反射面RP(在本第4實施形態,多面鏡PM之旋轉方向之前一個反射面RP)輸出原點訊號SZ。為了區別各反射面RP,方便上,圖29中,以RPa表示現在進行光束LB1之偏向之反射面RP,將其他反射面RP繞逆時針方向(繞與多面鏡PM之旋轉方向相反之方向)以RPb~RPh表示。The origin sensor OP1 uses the reflection surface RP adjacent to the reflection surface RP that performs the scanning of the spot light SP (the deviation of the light beam LB1) (in the fourth embodiment, the reflection surface RP before the rotation direction of the polygon mirror PM) The origin signal SZ is output. In order to distinguish each reflection surface RP, for convenience, in FIG. 29, the reflection surface RP which is now deflected by the light beam LB1 is represented by RPa, and the other reflection surface RP is wound counterclockwise (around the direction opposite to the rotation direction of the polygon mirror PM) Expressed as RPb~RPh.
原點感測器OP1具有光束送光系Opa,該光束送光系Opa具備射出半導體雷射等非感光性波長域之雷射光束Bga之光源部312、及使來自光源部312之雷射光束Bga反射後投射至多面鏡PM之反射面RPb之投射鏡314, 316。又,原點感測器OP1具有光束受光系Opb,該光束受光系Opb具備受光部318、將被反射面RPb反射之雷射光束Bga之反射光(反射光束Bgb)導至受光部318之反射鏡320, 322、及使被反射鏡322反射之反射光束Bgb聚光成微小點光之透鏡系324。受光部318具有將被透鏡系324聚光之反射光束Bgb之點光轉換成電氣訊號之光電轉換元件。此處,雷射光束Bga投射至多面鏡PM之各反射面RP之位置係設定成成為透鏡324之光瞳面(焦點位置)。The origin sensor OP1 has a light beam transmission system Opa, and the light beam transmission system Opa includes a
光束送光系Opa與光束受光系Opb,係設在在多面鏡PM之旋轉位置為反射面RP之點光SP之掃描開始前一刻之既定位置時,光束受光系Opb可接受光束送光系Opa射出之雷射光束Bga之反射光束Bgb之位置。亦即,光束送光系Opa與光束受光系Opb,係設在在反射面RP之角度為既定角度位置時,可接受光束送光系Opa射出之雷射光束Bga之反射光束Bgb之位置。此外,圖29之符號Msf係與旋轉軸AXp同軸配置之多面鏡驅動部RM(參照圖28)之旋轉馬達之軸。The beam receiving system Opa and the beam receiving system Opb are set at a predetermined position immediately before the scanning of the spot light SP at the rotation position of the polygon mirror PM is the reflection surface RP, the beam receiving system Opb can accept the beam transmitting system Opa The position of the reflected beam Bgb of the emitted laser beam Bga. That is, the light beam transmitting system Opa and the light beam receiving system Opb are set at positions where the reflected beam Bgb of the laser beam Bga emitted from the beam transmitting system Opa is acceptable when the angle of the reflection surface RP is a predetermined angular position. In addition, the symbol Msf in FIG. 29 is the axis of the rotation motor of the polygon mirror drive part RM (refer FIG. 28) arrange|positioned coaxially with the rotation axis AXp.
在緊鄰受光部318內之該光電轉換元件之受光面之前,設有具備微小寬之狹縫開口之遮光體(圖示略)。在反射面RPb之角度位置在既定角度範圍內之期間,反射光束Bgb射入透鏡系324,反射光束Bgb之點光在受光部318內之該遮光體上往一定方向掃描。在此掃描中,透射過遮光體之狹縫開口之反射光束Bgb之點光在受光部318之上述光電轉換元件被接受,其受光訊號被增幅器增幅後輸出為脈衝狀之原點訊號SZ。In front of the light-receiving surface of the photoelectric conversion element in the light-receiving
原點感測器OP1,如上述,藉由使光束LB1偏向(使點光SP掃描)之反射面RPa,使用旋轉方向之前一個反射面RPb檢測原點訊號SZ。因此,若相鄰反射面RP(例如,反射面RPa與反射面RPb)彼此之各夾角ηj相對於設計值(反射面RP為八個之情形為135度)具有誤差,則因該誤差之偏差,如圖30所示,會有原點訊號SZ之產生時序就反射面RP不同之情形。The origin sensor OP1, as described above, detects the origin signal SZ by deflecting the light beam LB1 to the reflective surface RPa (scanning the spot light SP) using the one reflective surface RPb before the rotation direction. Therefore, if the angle ηj between adjacent reflecting surfaces RP (for example, reflecting surface RPa and reflecting surface RPb) has an error with respect to the design value (135 degrees in the case of eight reflecting surfaces RP), the deviation due to the error As shown in FIG. 30, there may be a case where the generation timing of the origin signal SZ differs on the reflection surface RP.
圖30中,設使用反射面RPb產生之原點訊號SZ為SZb。同樣地,使用反射面RPc, RPd, RPe, …產生之原點訊號SZ為SZc, SZd, SZe, …。多面鏡PM之相鄰反射面RP彼此之夾角ηj為設計值之情形,各原點訊號SZ(SZb, SZc, SZd, …)之產生時序之間隔成為時間Tpx。此既定時間Tpx為多面鏡PM之反射面RP之一面旋轉所需之時間。然而,圖30中,因多面鏡PM之反射面RP之夾角ηj之誤差,使用反射面RPc, RPd產生之原點訊號SZc, SZd之時序相對於正規產生時序偏移。又,原點訊號SZb, SZc, SZd, SZe, …產生之時間間隔Tp1, Tp2, Tp3, …,因多面鏡PM之製造誤差,在μ秒等級並非一定。在圖30所示之時間表,Tp1<Tpx、Tp2>Tpx、Tp3<Tpx。此外,若設反射面RP之數為Np、多面鏡PM之旋轉速度為Vp,則Tpx以Tpx=60/(Np×Vp)秒表示。例如,Vp為三萬rpm,若設Np為8,則Tpx成為250μ秒。In FIG. 30, it is assumed that the origin signal SZ generated using the reflection surface RPb is SZb. Similarly, the origin signal SZ generated by using the reflective surfaces RPc, RPd, RPe,… is SZc, SZd, SZe, …. When the angle ηj between the adjacent reflection surfaces RP of the polygon mirror PM is the design value, the interval of the generation timing of each origin signal SZ (SZb, SZc, SZd, …) becomes the time Tpx. This predetermined time Tpx is the time required for one of the reflection surfaces RP of the polygon mirror PM to rotate. However, in FIG. 30, due to the error of the angle ηj of the reflection surface RP of the polygon mirror PM, the timing of the origin signals SZc, SZd generated using the reflection surfaces RPc, RPd is shifted from the normal timing. In addition, the origin signals SZb, SZc, SZd, SZe, ... the time intervals Tp1, Tp2, Tp3, ..., due to the manufacturing error of the polygon mirror PM, are not necessarily in the μ-second level. In the schedule shown in FIG. 30, Tp1<Tpx, Tp2>Tpx, and Tp3<Tpx. In addition, if the number of reflection surfaces RP is Np and the rotation speed of the polygon mirror PM is Vp, Tpx is represented by Tpx=60/(Np×Vp) seconds. For example, Vp is 30,000 rpm, and if Np is 8, Tpx becomes 250 μsec.
是以,因多面鏡PM之相鄰反射面RP彼此之各夾角ηj之誤差,各反射面RP(RPa~RPh)所描繪之點光SP在基板FS之被照射面上之描繪線SL1之描繪開始點(掃描開始點)之位置往主掃描方向偏移。藉此,描繪線SL之描繪結束點之位置亦往主掃描方向偏移。亦即,各反射面RP所描繪之點光SP之描繪線SL1之位置沿著掃描方向(Y方向)偏移,因此各描繪線SLn之描繪開始點及描繪結束點之位置不會沿著X方向成為直線。此點光SP之描繪線SL1之描繪開始點及描繪結束點之位置往主掃描方向偏移之主要原因為不會成為Tp1, Tp2, Tp3, …=Tpx。Therefore, due to the error of the included angle ηj between the adjacent reflecting surfaces RP of the polygon mirror PM, the point light SP depicted by each reflecting surface RP (RPa~RPh) is depicted by the drawing line SL1 on the illuminated surface of the substrate FS The position of the start point (scanning start point) is shifted toward the main scanning direction. As a result, the position of the drawing end point of the drawing line SL is also shifted in the main scanning direction. That is, the position of the drawing line SL1 of the spot light SP drawn by each reflection surface RP is shifted along the scanning direction (Y direction), so the positions of the drawing start point and drawing end point of each drawing line SLn do not follow X The direction becomes a straight line. The main reason for the position of the drawing start point and drawing end point of the drawing line SL1 of this spot light shifting to the main scanning direction is that it will not become Tp1, Tp2, Tp3, …=Tpx.
因此,在本第4實施形態,如圖30所示之時間表,將從一個脈衝狀之原點訊號SZ產生後經過時間Tpx後作為描繪開始點,開始點光SP之描繪。亦即,控制裝置18,在原點訊號SZ產生後經過時間Tpx後,控制光束切換構件20以使光束LB1射入掃描單元U1,且對圖26所示之光源裝置14’之驅動電路206a輸出接著進行掃描之掃描單元U1之描繪位元列資料Sdw,亦即序列資料DL1。藉此,能使原點訊號SZ之檢測所使用之反射面RPb與實際上使點光SP掃描之反射面RP成為相同反射面。Therefore, in the fourth embodiment, as shown in FIG. 30, the time period Tpx after the generation of one pulse-shaped origin signal SZ is taken as the drawing start point, and the drawing of the spot light SP is started. That is, the
具體說明,控制裝置18,在掃描單元U1之原點感測器OP1輸出原點訊號SZb後經過時間Tpx後,對光束切換構件20之選擇用光學元件AOM1在一定時間(ON時間Ton)輸出ON之驅動訊號。此選擇用光學元件AOM1成為ON之一定時間(ON時間Ton)係預先決定之時間,設定成覆蓋點光SP藉由多面鏡PM之一個反射面RP沿著描繪線SL掃描一次之期間(掃描期間)。接著,控制裝置18,將某個特定之列、例如第一列序列資料DL1輸出至光源裝置14’之驅動電路206a。藉此,掃描單元U1進行點光SP之掃描之掃描時間中,光束LB1射入掃描單元U1,因此掃描單元U1可描繪對應某個特定之列(例如第一列)序列資料DL1之圖案。如上述,在掃描單元U1之原點感測器OP1輸出原點訊號SZb後經過時間Tpx後,掃描單元U1進行點光SP之掃描,因此能以原點訊號SZb之檢測所使用之反射面RPb進行起因於該原點訊號SZb之點光SP之掃描。Specifically, the
接著,控制裝置18,在掃描單元U1之原點感測器OP1輸出原點訊號SZd後經過時間Tpx後,對光束切換構件20之選擇用光學元件AOM1在一定時間(ON時間Ton)輸出ON之驅動訊號。接著,控制裝置18,將下一列、例如第二列序列資料DL1輸出至光源裝置14’之驅動電路206a。藉此,包含掃描單元U1進行點光SP之掃描所需之時間之掃描時間中,光束LB1射入掃描單元U1,因此掃描單元U1可描繪對應下一列(例如第二列)序列資料DL1之圖案。如上述,在掃描單元U1之原點感測器OP1輸出原點訊號SZd後經過時間Tpx後,掃描單元U1進行點光SP之掃描,因此能以原點訊號SZd之檢測所使用之反射面RPb進行起因於該原點訊號SZd之點光SP之掃描。此外,在點光SP之掃描並非就多面鏡PM之連續之反射面RP進行而是跳過一面進行之情形,以跳過一個(隔一個)之方式使用原點訊號SZ進行描繪處理。關於上述跳過一個之描繪處理之原因將在之後詳細說明。Then, after the time Tpx elapses after the origin sensor OP1 of the scanning unit U1 outputs the origin signal SZd, the
以上述方式,在掃描單元U1之原點感測器OP1輸出原點訊號SZ後經過時間Tpx後,控制裝置18以掃描單元U1使點光SP掃描之方式控制光束切換構件20,且對光源裝置14’之驅動電路206a輸出序列訊號DL1。又,控制裝置18,每當掃描單元U1之掃描開始時,使輸出之序列資料DL1之列以第一列、第二列、第三列、第四列、…之方式在列方向偏移。此外,在掃描單元U1進行之點光SP之一次掃描至下一次掃描之期間,依序進行其他掃描單元Un(掃描單元U2~U6)進行之點光SP之掃描。其他掃描單元Un(U2~U6)進行之點光SP之掃描與掃描單元U1之掃描相同。又,原點感測器OPn(OP1~OP6)係就各掃描單元Un(U1~U6)設置。In the above manner, after a time Tpx elapses after the origin sensor OP1 of the scanning unit U1 outputs the origin signal SZ, the
如上述,使用掃描單元U1之原點訊號SZb之檢測所使用之反射面RP進行點光SP之掃描,藉此,即使在多面鏡PM之相鄰反射面RP彼此之各夾角ηj有誤差之情形,亦可抑制各反射面RP(RPa~RPh)所描繪之點光SP在基板FS之被照射面上之描繪開始點及描繪結束點之位置在主掃描方向偏移。As described above, the reflection surface RP used for the detection of the origin signal SZb of the scanning unit U1 is used to scan the spot light SP, thereby, even in the case where the angle ηj between adjacent reflection surfaces RP of the polygon mirror PM is in error It is also possible to suppress the position of the drawing start point and the drawing end point of the spot light SP drawn by the reflection surfaces RP (RPa~RPh) on the illuminated surface of the substrate FS from shifting in the main scanning direction.
為此,多面鏡PM旋轉45度之時間Tpx必須以μ秒等級正確,亦即,多面鏡PM之速度必須均一精密地以等速度旋轉。如上述,精密地以等速度使多面鏡PM旋轉之情形,原點訊號SZ之產生所使用之反射面RP恆為在時間Tpx後正確地僅旋轉45度使光束LB1朝向fθ透鏡FT反射之角度。是以,藉由提高旋轉多面鏡PM之旋轉等速性,亦極力降低一次旋轉中之速度不均,能使原點訊號SZ之產生所使用之反射面RP之位置與使光束LB1偏向以使點光SP掃描所使用之反射面RP之位置不同。亦即,由於使原點訊號SZ之產生時序延遲時間Tpx,因此其結果,具有與使用進行點光SP之掃描之反射面RP檢測原點訊號SZ相同之作用。藉此,可提升原點感測器OP1(OPn)之配置自由度,可設置剛性較高且穩定之構成之原點感測器。又,作為原點感測器OP1(OPn)之檢測對象之反射面RP,雖為使光束LB1(LBn)偏向之反射面RP之旋轉方向之前一個,但只要為多面鏡PM之旋轉方向之前即可,並不限於前一個。此情形,設作為原點感測器OP之檢測對象之反射面RP為使光束LB1(LBn)偏向之反射面RP之旋轉方向之前n(1以上之整數)個之情形,只要在原點訊號SZ產生後經過n×時間Tpx後設定描繪開始點即可。For this reason, the time Tpx at which the polygon mirror PM rotates 45 degrees must be correct in the order of μ seconds, that is, the speed of the polygon mirror PM must rotate uniformly and precisely at an equal speed. As described above, in the case where the polygon mirror PM is precisely rotated at an equal speed, the reflection surface RP used for the generation of the origin signal SZ is always an angle that correctly rotates only 45 degrees after the time Tpx to reflect the light beam LB1 toward the fθ lens FT . Therefore, by improving the rotational isokinetics of the rotating polygonal mirror PM, the speed unevenness in one rotation is also reduced as much as possible, so that the position of the reflecting surface RP used for generating the origin signal SZ and the light beam LB1 can be deflected so that The position of the reflective surface RP used for the spot light SP scanning is different. That is, since the origin signal SZ is generated with a timing delay time Tpx, the result has the same effect as the origin signal SZ detected using the reflection surface RP that performs scanning of the spot light SP. Thereby, the degree of freedom of the configuration of the origin sensor OP1 (OPn) can be improved, and the origin sensor with a high rigidity and a stable structure can be provided. In addition, although the reflection surface RP as the detection target of the origin sensor OP1 (OPn) is one before the rotation direction of the reflection surface RP that deflects the light beam LB1 (LBn), as long as it is before the rotation direction of the polygon mirror PM Yes, not limited to the previous one. In this case, let the reflection surface RP that is the detection target of the origin sensor OP be n (an integer greater than 1) before the rotation direction of the reflection surface RP that deflects the light beam LB1 (LBn), as long as the origin signal SZ It is sufficient to set the drawing start point after n×time Tpx after generation.
再者,對從原點感測器OP1(OPn)隔一個產生之原點訊號SZb, SZd, …之各個,在n×時間Tpx後設定描繪開始點,藉此,寬裕地產生對應各描繪線SL1之描繪資料之讀取動作、資料傳輸(通訊)動作、或者修正計算等之處理時間。因此,可確實地避免像素資料列之傳輸錯誤、像素資料列之錯誤或一部分消失。In addition, for each of the origin signals SZb, SZd, ... generated from the origin sensor OP1 (OPn) one by one, the drawing start point is set after n×time Tpx, thereby generating a corresponding line for each drawing generously Processing time of SL1 drawing data reading operation, data transmission (communication) operation, or correction calculation, etc. Therefore, the transmission error of the pixel data row, the error of the pixel data row, or a part of the disappearance can be reliably avoided.
此外,如上述圖29般,亦可不設置檢測接著進行點光SP之掃描(光束LB1之偏向)之反射面RP相鄰之反射面RP(本第4實施形態中,多面鏡PM之旋轉方向之前一個反射面RP)之原點感測器OPn,而設置檢測與接著進行點光SP之掃描(光束LB1之偏向)之反射面RP相同之反射面RP之原點感測器。此情形,如圖30所說明,由於就多面鏡PM之各反射面RPa~RPh產生之原點訊號(脈衝狀)SZ之時間間隔偏差,必須就各反射面RPa~RPh追加對應偏差量之時間偏置量。In addition, as shown in FIG. 29 described above, it is not necessary to provide a reflection surface RP adjacent to the reflection surface RP that detects and then performs scanning of the spot light SP (deflection of the light beam LB1) (in the fourth embodiment, before the rotation direction of the polygon mirror PM An origin sensor OPn of a reflection surface RP) is provided with an origin sensor that detects the reflection surface RP which is the same as the reflection surface RP of the scanning of the spot light SP (deflection of the light beam LB1). In this case, as illustrated in FIG. 30, since the time interval deviation of the origin signal (pulse-like) SZ generated on each reflection surface RPa~RPh of the polygon mirror PM, the time corresponding to the deviation amount must be added to each reflection surface RPa~RPh Offset.
此處,如圖7所說明,多面鏡PM之反射面RP為八個,最大掃描角度範圍α為15度之情形,掃描效率(α/β)成為1/3。例如,在從掃描單元U1使點光SP掃描至進行下一次掃描之期間,能使光束LBn分配至掃描單元U1以外之二個掃描單元Un,進行點光SP之掃描。亦即,在掃描單元U1之多面鏡PM旋轉一面之期間,能使對應之光束LBn分配至包含掃描單元U1之三個掃描單元Un之各個,進行點光SP之掃描。Here, as illustrated in FIG. 7, when the reflection surface RP of the polygon mirror PM is eight, and the maximum scanning angle range α is 15 degrees, the scanning efficiency (α/β) becomes 1/3. For example, during the period from the scanning unit U1 scanning the spot light SP to the next scanning, the light beam LBn can be distributed to two scanning units Un other than the scanning unit U1 to perform the scanning of the spot light SP. That is, while the polygon mirror PM of the scanning unit U1 rotates by one side, the corresponding light beam LBn can be distributed to each of the three scanning units Un including the scanning unit U1 to scan the spot light SP.
然而,由於多面鏡PM之掃描效率為1/3,因此在各掃描單元Un以最大掃描旋轉角度範圍α(15度)使點光SP掃描之情形,在掃描單元U1之多面鏡旋轉反射面RP之一面(β=45度)之期間,無法將光束LBn分配至掃描單元U1以外之三個以上之掃描單元Un(U2~U6)。亦即,從掃描單元U1之點光SP之掃描開始至下一次點光SP之掃描開始之期間,無法將光束LBn分配至掃描單元U1以外之三個以上之掃描單元Un(U2~U6)。因此,在掃描單元U1之點光SP之掃描開始至下一次掃描開始之期間,為了將光束LBn分配至其他五個掃描單元Un(U2~U6)之各個,進行點光SP之掃描,可考慮以下方法。However, since the scanning efficiency of the polygon mirror PM is 1/3, in the case where each scanning unit Un scans the spot light SP within the maximum scanning rotation angle range α (15 degrees), the polygon mirror of the scanning unit U1 rotates the reflection surface RP During one side (β=45 degrees), the light beam LBn cannot be distributed to three or more scanning units Un (U2 to U6) other than the scanning unit U1. That is, from the start of the scanning of the spot light SP of the scanning unit U1 to the start of the next scanning of the spot light SP, the light beam LBn cannot be distributed to three or more scanning units Un (U2 to U6) other than the scanning unit U1. Therefore, in order to distribute the light beam LBn to each of the other five scanning units Un (U2~U6) to scan the spot light SP from the start of the scanning of the spot light SP of the scanning unit U1 to the start of the next scan, consider The following method.
即使在最大掃描旋轉角度範圍α為15度之情形,亦將實際上點光SP之可掃描之多面鏡PM之掃描旋轉角度範圍α’設定成較最大掃描旋轉角度範圍α(α=15度)小。具體而言,在掃描單元Un(U1~U6)之各個之多面鏡PM旋轉反射面RP之一面(β=45度)之期間,欲分配光束LBn之掃描單元之數為六個,因此使掃描旋轉角度範圍α’為α’=45/6=7.5度。亦即,將以射入圖28中之fθ透鏡FT之光束LBn之光軸AXf為中心之振盪角限制在±7.5度。藉此,在各掃描單元Un之多面鏡PM旋轉45度之期間(旋轉反射面RP之一面之期間),能使光束LBn依序分配射入六個掃描單元Un(U1~U6)之任一個,掃描單元Un(U1~U6)可依序進行點光SP之掃描。然而,若為此情形,會有實際上點光SP之可掃描之掃描旋轉角度範圍α’變過小,點光SP掃描之最大掃描範圍長度、亦即描繪線SLn之最大掃描長度變過短之問題。為了避免上述問題,以點光SP掃描之最大掃描長度不變之方式準備焦點距離長之fθ透鏡FT,將從多面鏡PM之反射面RP至fθ透鏡FT之距離(作動距離)設定較長。此情形,亦會有因導致fθ透鏡FT變大、掃描單元Un(U1~U6)之Xt方向之尺寸變大且作動距離較長而使光束掃描之穩定性降低之顧慮。Even in the case where the maximum scan rotation angle range α is 15 degrees, the scan rotation angle range α′ of the polygon mirror PM that can actually be scanned by the spot light SP is set to be larger than the maximum scan rotation angle range α (α=15 degrees) small. Specifically, during the period when each polygon mirror PM of the scanning unit Un (U1 to U6) rotates one surface (β=45 degrees) of the reflection surface RP, the number of scanning units that want to distribute the light beam LBn is six, so the scanning The rotation angle range α'is α'=45/6=7.5 degrees. That is, the oscillation angle centered on the optical axis AXf of the light beam LBn incident on the fθ lens FT in FIG. 28 is limited to ±7.5 degrees. Thereby, during the period when the polygon mirror PM of each scanning unit Un rotates by 45 degrees (the period during which one of the reflection surfaces RP is rotated), the light beam LBn can be sequentially distributed to enter any one of the six scanning units Un (U1 to U6) , Scanning unit Un (U1~U6) can scan the spot light SP in sequence. However, if this is the case, the scanning rotation angle range α′ of the scannable spot light SP becomes too small, and the maximum scan range length of the spot light SP scan, that is, the maximum scan length of the drawing line SLn becomes too short problem. In order to avoid the above problem, the fθ lens FT with a long focal distance is prepared in such a way that the maximum scanning length of the spot light SP scan does not change, and the distance (actuation distance) from the reflection surface RP of the polygon mirror PM to the fθ lens FT is set to be longer. In this case, there is also a concern that the stability of the beam scanning may be reduced due to the larger fθ lens FT, the larger Xt dimension of the scanning unit Un (U1~U6) and the longer actuation distance.
另一方面,可考慮減少多面鏡PM之反射面RP之數,增大多面鏡PM旋轉反射面RP之一面之旋轉角度β。此情形,可一邊抑制描繪線SLn變短或掃描單元Un(U1~U6)變大、一邊在掃描單元Un(U1~U6)之多面鏡PM旋轉反射面RP之一面(旋轉角度β)之期間,分配光束LBn,六個掃描單元Un(U1~U6)依序使點光SP掃描。例如,多面鏡PM之反射面RP之數為四個之情形,亦即,多面鏡PM之形狀為正方形之情形,多面鏡PM旋轉反射面RP之一面之旋轉角度β成為90度。是以,在掃描單元U1之多面鏡PM旋轉反射面RP之一面之期間,分配光束LBn,以六個掃描單元Un(U1~U6)進行點光SP之掃描之情形,實際上點光SP之可掃描之多面鏡PM之掃描旋轉角度範圍α’成為α’=90/6=15度,與上述最大掃描旋轉角度範圍α相等。On the other hand, it may be considered to reduce the number of reflection surfaces RP of the polygon mirror PM and increase the rotation angle β of one of the surfaces of the rotation reflection surface RP of the polygon mirror PM. In this case, while the drawing line SLn becomes shorter or the scanning unit Un (U1 to U6) becomes larger, the polygon mirror PM of the scanning unit Un (U1 to U6) rotates one of the reflection surfaces RP (rotation angle β) , Distribute the light beam LBn, and the six scanning units Un (U1~U6) sequentially scan the spot light SP. For example, when the number of reflecting surfaces RP of the polygon mirror PM is four, that is, the shape of the polygon mirror PM is square, the rotation angle β of one surface of the polygon mirror PM rotating the reflecting surface RP becomes 90 degrees. Therefore, during the period when the polygon mirror PM of the scanning unit U1 rotates one of the reflection surfaces RP, the light beam LBn is distributed and the spot light SP is scanned by the six scanning units Un (U1 to U6). In fact, the spot light SP The scan rotation angle range α′ of the scanable polygon mirror PM becomes α′=90/6=15 degrees, which is equal to the above-mentioned maximum scan rotation angle range α.
然而,若使三角形、正方形般反射面數Np少之多角形之多面鏡PM高速旋轉,則空氣阻力(風阻)變過大,旋轉速度、旋轉數降低(規律)。例如,即使在欲以數萬rpm(rotation per minute)使多面鏡PM高速旋轉之情形,旋轉速度亦因空氣阻力減少2~3成程度,無法獲得所欲之高速旋轉速度、高旋轉數。又,亦考慮使多面鏡PM之外形尺寸變大之方法,但多面鏡PM之重量變過大,無法獲得所欲之高速旋轉速度、高旋轉數。此外,作為即使減少多面鏡PM之反射面數Np亦降低旋轉時之風阻之方法,可考慮將多面鏡PM整體設置在真空環境內或設置在分子量較空氣小之氣體(氦等)之環境內。此情形,在多面鏡PM周圍設置用以製作上述環境之氣密構造體,相對應地掃描單元Un(U1~U6)變大。However, if a polygonal mirror PM with a small number of reflective surfaces Np, such as triangles or squares, is rotated at high speed, the air resistance (air resistance) becomes too large, and the rotation speed and the number of rotations decrease (regularly). For example, even in the case where the polygonal mirror PM is to be rotated at a high speed of tens of thousands of rpm (rotation per minute), the rotation speed is reduced by 20% to 30% due to the air resistance, and the desired high speed rotation speed and high rotation number cannot be obtained. In addition, a method of increasing the outer dimension of the polygon mirror PM is also considered, but the weight of the polygon mirror PM becomes too large, and the desired high-speed rotation speed and high rotation number cannot be obtained. In addition, as a method of reducing the wind resistance during rotation even if the number of reflecting surfaces Np of the polygon mirror PM is reduced, it may be considered to install the entire polygon mirror PM in a vacuum environment or an environment with a gas (helium, etc.) having a smaller molecular weight than air. . In this case, an airtight structure for manufacturing the above environment is provided around the polygon mirror PM, and accordingly the scanning units Un (U1 to U6) become larger.
因此,在本第4實施形態,使用反射面數Np較多之多角形、亦即更接近圓形之八角形之多面鏡PM,並同時使實際上點光SP之可掃描之多面鏡PM之掃描旋轉角度範圍α’為最大掃描旋轉角度範圍α(α=15度),將進行點光SP之掃描(光束LBn之偏向)之多面鏡PM之反射面RP設定成隔一個。亦即,各掃描單元Un(U1~U6)進行之點光SP之掃描就多面鏡PM之反射面RP之每隔一面(跳過一面)反覆。是以,在掃描單元U1使點光SP掃描至進行下一次掃描之期間,可依序將光束LB2~LB6分配至掃描單元U1以外之五個掃描單元U2~U6之各個,進行點光SP之掃描。亦即,在六個掃描單元Un(U1~U6)中注目之一個掃描單元Un之多面鏡PM旋轉二面之期間,藉由將光束LB1~LB6分配至六個掃描單元Un(U1~U6)之各個,六個掃描單元Un(U1~U6)全部可進行點光SP之掃描。此情形,在各掃描單元Un(U1~U6)開始點光SP之掃描至開始下一個點光SP之掃描前,多面鏡PM成為旋轉二面(90度)。為了進行上述描繪動作,六個掃描單元Un(U1~U6)之各個之多面鏡PM被同步控制成旋轉速度成為相同,且各多面鏡PM之反射面RP之角度位置被同步控制成彼此成為既定相位關係。Therefore, in the fourth embodiment, a polygonal mirror PM with a large number of reflecting surfaces Np, that is, an octagonal shape that is closer to a circle is used, and at the same time, a polygonal mirror PM that can actually scan the spot light SP The scan rotation angle range α′ is the maximum scan rotation angle range α (α=15 degrees), and the reflection surface RP of the polygon mirror PM that performs the scanning of the spot light SP (the deviation of the light beam LBn) is set to be separated by one. That is, the scanning of the spot light SP by each scanning unit Un (U1 to U6) is repeated on every other surface (skip side) of the reflective surface RP of the polygon mirror PM. Therefore, during the period that the scanning unit U1 scans the spot light SP to the next scan, the light beams LB2~LB6 can be sequentially distributed to each of the five scanning units U2~U6 other than the scanning unit U1 to perform the spot light SP scanning. That is, by distributing the light beams LB1~LB6 to the six scanning units Un(U1~U6) while the polygon mirror PM of the one scanning unit Un paying attention to the six scanning units Un(U1~U6) rotates on both sides Each of the six scanning units Un (U1~U6) can scan the spot light SP. In this case, before each scanning unit Un (U1 to U6) starts scanning of the spot light SP to start scanning of the next spot light SP, the polygon mirror PM becomes a two-sided rotation (90 degrees). In order to perform the above-described drawing operation, the polygon mirrors PM of each of the six scanning units Un (U1 to U6) are synchronously controlled so that the rotational speed becomes the same, and the angular positions of the reflection surfaces RP of the polygon mirrors PM are synchronously controlled to become predetermined Phase relationship.
此外,由於使進行點光SP之掃描(光束LBn之偏向)之多面鏡PM之反射面RP為隔一面,因此在各掃描單元Un(U1~U6)之多面鏡PM旋轉一次之期間,沿著描繪線SLn(SL1~SL6)之各個之點光SP之掃描次數成為四次。因此,相較於點光SP之掃描(光束LBn之偏向)就多面鏡PM之連續之反射面RP反覆之情形、亦即以多面鏡PM之各反射面RP進行之情形,描繪線SLn之數成為一半,因此較佳為,基板FS之搬送速度亦減速成一半。不欲使基板FS之搬送速度成為一半之情形,使各掃描單元Un(U1~U6)之多面鏡PM之旋轉速度及振盪頻率Fs提高成2倍。例如,就多面鏡PM之連續之反射面RP反覆點光SP之掃描(光束LBn之偏向)時之多面鏡PM之旋轉速度為2萬rpm,來自光源裝置14’之光束LB之振盪頻率Fs為200MHz之情形,就多面鏡PM之每隔一面反射面RP反覆點光SP之掃描(光束LBn之偏向)之情形,多面鏡PM之旋轉速度設定成4萬rpm,來自光源裝置14’之光束LB之振盪頻率Fs設定成400MHz。In addition, since the reflection surface RP of the polygon mirror PM performing the scanning of the spot light SP (the deviation of the light beam LBn) is separated by one surface, during the period when the polygon mirror PM of each scanning unit Un (U1 to U6) rotates once, along the The number of scans of the spot light SP of each of the drawing lines SLn (SL1 to SL6) becomes four. Therefore, compared with the scanning of the spot light SP (the deviation of the light beam LBn) on the continuous reflection surface RP of the polygon mirror PM, that is, the case where each reflection surface RP of the polygon mirror PM is performed, the number of lines SLn is drawn Since it becomes half, it is preferable that the transfer speed of the substrate FS is also reduced to half. In order not to reduce the transfer speed of the substrate FS by half, the rotation speed and the oscillation frequency Fs of the polygon mirror PM of each scanning unit Un (U1 to U6) are doubled. For example, when the continuous reflection surface RP of the polygon mirror PM repeatedly scans the spot light SP (the deviation of the light beam LBn), the rotation speed of the polygon mirror PM is 20,000 rpm, and the oscillation frequency Fs of the light beam LB from the light source device 14' is In the case of 200 MHz, the rotation speed of the polygon mirror PM is set to 40,000 rpm, and the light beam LB from the
此處,控制裝置18根據原點訊號SZ管理複數個掃描單元Un(U1~U6)中哪一個掃描單元Un進行點光SP之掃描。然而,各掃描單元Un(U1~U6)之原點感測器OPn,在各反射面RP成為既定角度位置後產生原點訊號SZ,因此若直接使用此原點訊號SZ,則控制裝置18判斷各掃描單元Un(U1~U6)就連續之反射面RP使點光SP掃描。是以,在一個掃描單元Un進行點光SP之掃描至進行下一次掃描前,無法將光束LBn分配至其他五個掃描單元Un。因此,為了將進行點光SP之掃描之多面鏡PM之反射面RP設定成隔一個,必須產生與原點訊號SZ隔開之副原點訊號(副原點脈衝訊號)ZP。又,如上述,使用進行點光SP之掃描(偏向)之反射面RP之旋轉方向之前一個反射面RP進行原點訊號SZ之檢測,因此必須產生使原點訊號SZ之產生時序延遲時間Tpx之副原點訊號ZP。以下,針對產生此副原點訊號ZP之副原點產生電路CA之構成進行說明。Here, the
圖31係用以產生與原點訊號SZ隔開使其產生時序延遲既定時間Tpx之副原點訊號ZP之副原點產生電路CA之構成圖。圖32係顯示藉由圖31之副原點產生電路CA產生之副原點訊號ZP之時間圖。此副原點產生電路CA具有分頻器330與延遲電路332。分頻器330將原點訊號SZ之產生時序之頻率分頻成1/2後作為原點訊號SZ’輸出至延遲電路332。延遲電路332使傳送來之原點訊號SZ’延遲時間Tpx,作為副原點訊號ZP輸出。此副原點產生電路CA對應各掃描單元Un(U1~U6)之原點感測器OPn設有複數個。FIG. 31 is a configuration diagram of a sub-origin generating circuit CA for generating a sub-origin signal ZP separated from the origin signal SZ so that its timing is delayed by a predetermined time Tpx. FIG. 32 is a timing chart showing the sub-origin signal ZP generated by the sub-origin generating circuit CA of FIG. 31. The secondary origin generating circuit CA has a
此外,會有以CAn表示對應掃描單元Un之原點感測器OPn之副原點產生電路CA之情形。亦即,會有以CA1表示對應掃描單元U1之原點感測器OP1之副原點產生電路CA、以CA2~CA6表示對應掃描單元U2~U6之原點感測器OP2~OP6之副原點產生電路CA之情形。又,會有以SZn表示從掃描單元Un之原點感測器OPn輸出之原點訊號SZ之情形。亦即,會有以SZ1表示從掃描單元U1之原點感測器OP1輸出之原點訊號SZ、以SZ2~SZ6表示從掃描單元U2~U6之原點感測器OP2~OP6輸出之原點訊號SZ之情形。此外,會有以SZn’, ZPn表示根據原點訊號SZn產生之原點訊號SZ’、副原點訊號ZP之情形。亦即,會有以SZ1’, ZP1表示根據原點訊號SZ1產生之原點訊號SZ’、副原點訊號ZP之情形,同樣地,會有以SZ2’~SZ6’, ZP2~ZP6表示根據原點訊號SZ2~SZ6產生之原點訊號SZ’、副原點訊號ZP之情形。In addition, there may be a case where CAn denotes a sub-origin generating circuit CA corresponding to the origin sensor OPn of the scanning unit Un. That is, there will be CA1 representing the secondary origin generating circuit CA corresponding to the origin sensor OP1 of the scanning unit U1, and CA2~CA6 representing the secondary origin of the origin sensors OP2~OP6 corresponding to the scanning unit U2~U6 Point generation circuit CA. In addition, there may be a case where SZn represents the origin signal SZ output from the origin sensor OPn of the scanning unit Un. That is, there will be SZ1 representing the origin signal SZ output from the origin sensor OP1 of the scanning unit U1, and SZ2~SZ6 representing the origin point output from the origin sensors OP2~OP6 of the scanning unit U2~U6 Signal SZ. In addition, there may be cases where SZn’, ZPn represent the origin signal SZ’ generated from the origin signal SZn and the secondary origin signal ZP. That is, there will be cases where SZ1', ZP1 indicate the origin signal SZ' generated according to the origin signal SZ1 and the secondary origin signal ZP. Similarly, there will be SZ2'~SZ6', ZP2~ZP6 indicating The situation of the origin signal SZ' generated by the point signals SZ2~SZ6 and the secondary origin signal ZP.
圖33係顯示曝光裝置EX之電氣構成之方塊圖,圖34係顯示輸出原點訊號SZ1~SZ6、副原點訊號ZP1~ZP6、及序列資料DL1~DL6之時序之時間圖。曝光裝置EX之控制裝置18具備旋轉控制部350、光束切換控制部352、描繪資料輸出控制部354、及曝光控制部356。又,曝光裝置EX具備使包含各掃描單元Un(U1~U6)之馬達等之多面鏡驅動部RM驅動之馬達驅動電路Drm1~Drm6。Fig. 33 is a block diagram showing the electrical structure of the exposure device EX, and Fig. 34 is a time chart showing the timing of outputting the origin signals SZ1~SZ6, the secondary origin signals ZP1~ZP6, and the sequence data DL1~DL6. The
旋轉控制部350,藉由控制馬達驅動電路Drm1~Drm6,控制各掃描單元Un(U1~U6)之多面鏡PM之旋轉。旋轉控制部350,藉由控制馬達驅動電路Drm1~Drm6,以複數個掃描單元Un(U1~U6)之多面鏡PM之旋轉角度位置彼此成為既定相位關係之方式,使複數個掃描單元Un(U1~U6)之多面鏡PM同步旋轉。詳細而言,旋轉控制部350,以複數個掃描單元U1~U6之多面鏡PM之旋轉速度(旋轉數)彼此相同且逐一錯開一定角度之旋轉角度位置之相位之方式,控制複數個掃描單元Un(U1~U6)之多面鏡PM之旋轉。此外,圖33中之參照符號PD1~PD6表示從旋轉控制部350輸出至馬達驅動電路Drm1~Drm6之控制訊號。The
在本第4實施形態,設多面鏡PM之旋轉速度Vp為3.9萬rpm(650rps)。又,由於設定成反射面數Np為8,掃描效率(α/β)為1/3,進行點光SP之掃描之反射面RP為隔一面,因此六個多面鏡PM間之旋轉角度位置相位差為最大掃描旋轉角度範圍α、亦即15度。點光SP之掃描係以U1→U2→…→U6之順序進行。是以,以六個掃描單元U1~U6之各個之多面鏡PM之旋轉角度位置之相位依序逐一錯開15度之狀態下等速旋轉之方式,被旋轉控制部350同步控制。藉此,掃描單元U1與掃描單元U4之旋轉角度位置之相位偏移成為對應正好一面之旋轉角度之45度。因此,掃描單元U1與掃描單元U4之旋轉角度位置之相位、亦即原點訊號SZ1, SZ4之產生時序亦可一致。同樣地,掃描單元U2與掃描單元U5之旋轉角度位置及掃描單元U3與掃描單元U6之旋轉角度位置之相位偏移皆成為45度,因此來自掃描單元U2與掃描單元U5之各個之原點訊號SZ2, SZ5之產生時序及來自掃描單元U3與掃描單元U6之各個之原點訊號SZ3, SZ6之產生時序在時間軸上亦可一致。In the fourth embodiment, the rotational speed Vp of the polygon mirror PM is set to 39,000 rpm (650 rps). In addition, since the number of reflection surfaces Np is set to 8, the scanning efficiency (α/β) is 1/3, and the reflection surface RP for scanning the spot light SP is separated by one surface, the rotational angle position phase between the six polygon mirrors PM The difference is the maximum scan rotation angle range α, that is, 15 degrees. The scanning of the spot light SP is performed in the order of U1→U2→...→U6. Therefore, the
具體而言,旋轉控制部350,以掃描單元U1與掃描單元U4之多面鏡PM之旋轉、掃描單元U2與掃描單元U5之多面鏡PM之旋轉、及掃描單元U3與掃描單元U6之多面鏡PM之旋轉之各個成為第1控制狀態之方式,透過各馬達驅動電路Drm1~Drm6控制各掃描單元U1~U6之多面鏡PM之旋轉。此第1控制狀態係每當多面鏡PM旋轉一次時輸出之旋繞脈衝訊號之相位差為0(零)之狀態。亦即,以每當掃描單元U1與掃描單元U4之多面鏡PM旋轉一次時輸出之旋繞脈衝訊號之相位差成為0(零)之方式,控制掃描單元U1與掃描單元U4之多面鏡PM之旋轉。同樣地,以每當掃描單元U2與掃描單元U5及掃描單元U3與掃描單元U6之多面鏡PM旋轉一次時輸出之旋繞脈衝訊號之相位差成為0(零)之方式,控制掃描單元U2與掃描單元U5及掃描單元U3與掃描單元U6之多面鏡PM之旋轉。Specifically, the
此旋繞脈衝訊號亦可為藉由未圖示之分頻器每當掃描單元Un之原點訊號SZn輸出八次時輸出一次之訊號。又,旋繞脈衝訊號亦可為從設在各掃描單元Un(U1~U6)之多面鏡驅動部RM之編碼器(省略圖示)輸出之訊號。亦可將檢測旋繞脈衝訊號之感測器設在多面鏡PM附近。在圖34所示之例,每當掃描單元Un之原點訊號SZn輸出八次時輸出一次旋繞脈衝訊號,以虛線表示對應該旋繞脈衝訊號之產生之原點訊號SZn之一部分。此外,各原點訊號SZ1與各原點訊號SZ4,若不考慮相鄰反射面RP(例如,反射面RPa與反射面RPb)彼此之各夾角ηj之誤差(參照圖29),在時間軸上全部相位一致。同樣地,各原點訊號SZ2與各原點訊號SZ5及各原點訊號SZ3與各原點訊號SZ6,若不考慮相鄰反射面RP彼此之各夾角ηj之誤差(參照圖29),在時間軸上全部相位一致。此外,圖34中,為了方便說明,設不存在相鄰反射面RP彼此之各夾角ηj之誤差來說明。The convolution pulse signal may also be a signal output once when the origin signal SZn of the scanning unit Un is output eight times by a frequency divider (not shown). In addition, the rotation pulse signal may also be a signal output from an encoder (not shown) of the polygon mirror drive unit RM provided in each scanning unit Un (U1 to U6). The sensor for detecting the rotating pulse signal can also be located near the polygon mirror PM. In the example shown in FIG. 34, each time the origin signal SZn of the scanning unit Un is output eight times, the convolution pulse signal is output once, and a part of the origin signal SZn corresponding to the generation of the convolution pulse signal is indicated by a dotted line. In addition, if the origin signal SZ1 and the origin signal SZ4 do not consider the error of the included angle ηj between the adjacent reflection surfaces RP (for example, the reflection surface RPa and the reflection surface RPb) (see FIG. 29), the time axis All phases are consistent. Similarly, for each origin signal SZ2 and each origin signal SZ5 and each origin signal SZ3 and each origin signal SZ6, if the error of each included angle ηj between adjacent reflection surfaces RP is not taken into account (see FIG. 29), at time All phases on the axis are consistent. In addition, in FIG. 34, for convenience of explanation, it is assumed that there is no error between the angles ηj between adjacent reflection surfaces RP.
接著,旋轉控制部350,在保持第1控制狀態下,以掃描單元U2, U5之多面鏡PM之旋轉角度位置之相位相對於掃描單元U1, U4之多面鏡PM之旋轉角度位置錯開15度之方式,控制掃描單元U2, U5之多面鏡PM之旋轉。同樣地,旋轉控制部350,在保持第1控制狀態下,以掃描單元U3, U6之多面鏡PM之旋轉角度位置之相位相對於掃描單元U1, U4之多面鏡PM之旋轉角度位置錯開30度之方式,控制掃描單元U3, U6之多面鏡PM之旋轉。設此多面鏡PM旋轉15度之時間(光束LBn之最大掃描時間)為Ts。Next, while maintaining the first control state, the
具體而言,旋轉控制部350,以掃描單元U2, U5所得之旋繞脈衝訊號相對於掃描單元U1, U4所得之旋繞脈衝訊號延遲時間Ts產生之方式,控制掃描單元U2, U5之多面鏡PM之旋轉(參照圖34)。同樣地,旋轉控制部350,以掃描單元U3, U6所得之旋繞脈衝訊號相對於掃描單元U1, U4所得之旋繞脈衝訊號延遲時間2×Ts產生之方式,控制掃描單元U3, U6之多面鏡PM之旋轉(參照圖34)。若設多面鏡PM之旋轉速度Vp為3.9萬rpm(650rps),則時間Ts為Ts=[1/(Vp×Np)]×(α/β)=1/(650×8×3)秒[約64.1μ秒]。以上述方式,藉由控制各掃描單元U1~U6之多面鏡PM之旋轉,能以U1→U2→…→U6之順序以分時方式進行各掃描單元U1~U6之點光SP之掃描。Specifically, the
光束切換控制部352控制光束切換構件20之選擇用光學元件AOMn(AOM1~AOM6),在一個掃描單元Un開始掃描至開始下一次掃描前,將來自光源裝置14’之光束LB分配至六個掃描單元Un(U1~U6)。因此,光束切換控制部352,以各掃描單元Un(U1~U6)之多面鏡PM之光束LBn之掃描(偏向)就多面鏡PM之每隔一個反射面RP反覆之方式,藉由選擇用光學元件AOM1~AOM6以分時方式使從光束LB產生之光束LB1~LB6之任一個射入各掃描單元Un(U1~U6)。The beam
具體說明,光束切換控制部352具備根據原點訊號SZn(SZ1~SZ6)產生副原點訊號ZPn(ZP1~ZP6)之圖31所示之副原點產生電路CAn(CA1~CA6)。藉由此副原點產生電路CAn(CA1~CA6)產生副原點訊號ZPn(ZP1~ZP6)後,使因副原點訊號ZPn(ZP1~ZP6)之產生之對應掃描單元Un(U1~U6)之選擇用光學元件AOMn(AOM1~AOM6)在一定時間(ON時間Ton)ON。例如,副原點訊號ZP1產生後,使因副原點訊號ZP1之產生之對應掃描單元U1之選擇用光學元件AOM1在一定時間(ON時間Ton)ON。此副原點訊號ZPn係根據從原點感測器OPn輸出之原點訊號SZn產生者,將原點訊號SZn之頻率分頻成1/2,亦即,與原點訊號SZn之一半隔開且延遲時間Tpx者。此一定時間(ON時間Ton)對應副原點訊號ZPn產生之時點至來自接著進行掃描之掃描單元Un之副原點訊號ZPn產生之時點為止之期間、亦即多面鏡PM旋轉15度所需之時間Ts。若選擇用光學元件AOMn之ON時間Ton設定地較時間Ts長,則產生選擇用光學元件AOMn中二個同時成為ON狀態之期間,無法將光束LB1~LB6正確地導入欲使點光SP進行描繪動作之掃描單元Un。是以,ON時間Ton係設定成Ton≦Ts。Specifically, the beam switching
此時,各原點訊號SZ1與各原點訊號SZ4,若不考慮相鄰反射面RP(例如,反射面RPa與反射面RPb)彼此之各夾角ηj之誤差,在時間軸上全部同步,設定成副原點訊號ZP1與副原點訊號ZP4之相位錯開約一半週期(參照圖34)。此副原點訊號ZP1與副原點訊號ZP4之相位之約一半週期之偏移,係藉由副原點產生電路CAn(CA1~CA6)之分頻器330進行。亦即,分頻器330使與原點訊號SZ1隔開之時序及與原點訊號SZ4隔開之時序錯開大致一半週期。At this time, if each origin signal SZ1 and each origin signal SZ4, regardless of the error of each included angle ηj between adjacent reflecting surfaces RP (for example, reflecting surface RPa and reflecting surface RPb), all are synchronized on the time axis and set The phase of the secondary origin signal ZP1 and the secondary origin signal ZP4 are shifted by about half a period (refer to FIG. 34). The phase shift of the secondary origin signal ZP1 and the secondary origin signal ZP4 by about half of the cycle is performed by the
副原點訊號ZP2與副原點訊號ZP5之關係亦同樣地,藉由分頻器330設定成副原點訊號ZP2與副原點訊號ZP5之相位錯開約一半週期(參照圖34)。又,副原點訊號ZP3與副原點訊號ZP6之關係亦同樣地,藉由分頻器330設定成副原點訊號ZP3與副原點訊號ZP6之相位錯開約一半週期(參照圖34)。The relationship between the sub-origin signal ZP2 and the sub-origin signal ZP5 is similarly set by the
是以,如圖34所示,就掃描單元U1~U6產生之副原點訊號ZP1~ZP6之產生時序逐一錯開時間Ts。在本第4實施形態,進行點光SP之掃描之掃描單元Un之順序為U1→U2→…→U6,因此副原點訊號ZPn,在副原點訊號ZP1產生後經過時間Ts後產生副原點訊號ZP2之情形,亦以ZP1→ZP2→…→ZP6之順序以時間Ts間隔產生。是以,光束切換控制部352,對應產生之副原點訊號ZPn(ZP1~ZP6),控制光束切換構件20之選擇用光學元件AOMn(AOM1~AOM6),藉此能以U1→U2→…→U6之順序使對應之光束LB1~LB6射入掃描單元Un之各個。亦即,能以各掃描單元Un(U1~U6)之多面鏡PM進行之光束LBn之掃描(偏向)就多面鏡PM之每隔一面反射面RP反覆之方式,以分時方式切換射入各掃描單元Un(U1~U6)之光束LBn。Therefore, as shown in FIG. 34, the generation timings of the secondary origin signals ZP1~ZP6 generated by the scanning units U1~U6 are shifted one by one by the time Ts. In the fourth embodiment, the sequence of the scanning unit Un for scanning the spot light SP is U1→U2→...→U6, so the secondary origin signal ZPn generates the secondary origin after the time Ts elapses after the secondary origin signal ZP1 is generated The point signal ZP2 is also generated at the time Ts interval in the order of ZP1→ZP2→...→ZP6. Therefore, the beam switching
描繪資料輸出控制部354,將對應藉由掃描單元Un使點光SP掃描之一條描繪線SLn之圖案之一列序列資料DLn作為描繪位元列資料Sdw輸出至光源裝置14’之驅動電路206a。進行點光SP之掃描之掃描單元Un之順序為U1→U2→…→U6,因此描繪資料輸出控制部354輸出一列序列資料DLn以DL11→DL2→…→DL6之順序反覆之描繪位元列資料Sdw。The drawing data
使用圖35詳細說明描繪資料輸出控制部354之構成。描繪資料輸出控制部354具有對應掃描單元U1~U6之各個之六個產生電路360, 362, 364, 366, 368, 370與OR電路GT8。產生電路360~370具有相同之構成,具體而言,產生電路360具備記憶體部BM1、計數器部CN1、及閘部GT1,產生電路362具備記憶體部BM2、計數器部CN2、及閘部GT2。產生電路364具備記憶體部BM3、計數器部CN3、及閘部GT3,產生電路366具備記憶體部BM4、計數器部CN4、及閘部GT4。產生電路368具備記憶體部BM5、計數器部CN5、及閘部GT5,產生電路370具備記憶體部BM6、計數器部CN6、及閘部GT6。此產生電路360~370之構成亦可與圖16所示之產生電路301, 303, 305為相同構成。The configuration of the drawing data
記憶體部BM1~BM6係儲存各掃描單元Un(U1~U6)待描繪曝光之圖案所對應之圖案資料(位元圖資料)之記憶體。計數器部CN1~CN6,係將儲存在各記憶體部BM1~BM6之圖案資料中接著待描繪之一條描繪線SLn之序列資料DL1~DL6逐一像素與時脈訊號CLK同步地輸出之計數器。此計數器部CN1~CN6,如圖34所示,在從光束切換控制部352之副原點產生電路CA1~CA6輸出副原點訊號ZP1~ZP6後,輸出一個序列資料DL1~DL6。The memory parts BM1~BM6 are memories for storing pattern data (bitmap data) corresponding to the patterns to be drawn by each scanning unit Un (U1~U6). The counter sections CN1~CN6 are counters that output the sequence data DL1~DL6 stored in the pattern data of each memory section BM1~BM6 and then one drawing line SLn to be synchronized with the clock signal CLK pixel by pixel. As shown in FIG. 34, the counter parts CN1 to CN6 output the sub-origin signals ZP1 to ZP6 from the sub-origin generating circuits CA1 to CA6 of the beam switching
儲存在各記憶體部BM1~BM6之圖資料係藉由未圖示之位址計數器等,輸出之序列資料DL1~DL6在列方向偏移。亦即,藉由未圖示之位址計數器讀取之列以第一列、第二列、第三列、…之方式偏移。此偏移,例如,若為對應掃描單元U1之記憶體部BM1,則在序列資料DL1輸出結束後,對應接著進行掃描之掃描單元U2之副原點訊號ZP2產生之時序進行。同樣地,儲存在記憶體部BM2之圖案資料之序列資料DL2之偏移,在序列資料DL2輸出結束後,對應接著進行掃描之掃描單元U3之副原點訊號ZP3產生之時序進行。同樣地,儲存在記憶體部BM3~BM6之圖案資料之序列資料DL3~DL6之偏移,在序列資料DL3~DL6輸出結束後,對應接著進行掃描之掃描單元U4~U6, U1之副原點訊號ZP4~ZP6, ZP1產生之時序進行。此外,點光SP之掃描係以U1→U2→…→U6之順序進行。The map data stored in each memory part BM1~BM6 is shifted in the column direction by the output sequence data DL1~DL6 by an unillustrated address counter or the like. That is, the column read by the address counter (not shown) is shifted in the manner of the first column, the second column, the third column,... This offset, for example, if it corresponds to the memory portion BM1 of the scanning unit U1, after the output of the sequence data DL1 is completed, corresponds to the timing of the generation of the secondary origin signal ZP2 of the scanning unit U2 that is to be scanned next. Similarly, the offset of the sequence data DL2 of the pattern data stored in the memory portion BM2 is performed in accordance with the timing of the generation of the sub-origin signal ZP3 of the scanning unit U3 that is subsequently scanned. Similarly, the offset of the sequence data DL3~DL6 of the pattern data stored in the memory part BM3~BM6, after the output of the sequence data DL3~DL6, corresponds to the sub-origin of the scanning unit U4~U6, U1 which is then scanned The timing of signal ZP4~ZP6, ZP1 is generated. In addition, the scanning of the spot light SP is performed in the order of U1→U2→...→U6.
以上述方式依序輸出之序列資料DL1~DL6,通過施加副原點訊號ZP1~ZP6後一定時間(ON時間Ton)中開啟之閘部GT1~GT6施加至6輸入之OR電路GT8。OR電路GT8將序列資料DL1→DL2→DL3→DL4→DL5→DL6→DL1…之順序反覆合成之序列資料DLn作為描繪位元列資料Sdw輸出至光源裝置14’之驅動電路206a。以上述方式,各掃描單元Un(U1~U6),能與進行點光SP之掃描同時地,描繪曝光對應圖案資料之圖案。The sequence data DL1 to DL6 sequentially output in the above manner are applied to the 6-input OR circuit GT8 by applying the gate signals GT1 to GT6 that are opened within a certain time (ON time Ton) after applying the sub-origin signals ZP1 to ZP6. The OR circuit GT8 repeatedly outputs the sequence data DL1 → DL2 → DL3 → DL4 → DL5 → DL6 → DL1 ... in sequence and synthesizes the sequence data DLn as the drawing bit row data Sdw to the
在本第4實施形態,就掃描單元Un(U1~U6)準備圖案資料,從各掃描單元Un(U1~U6)之圖案資料中依據進行點光SP之掃描之掃描單元Un之順序輸出序列資料DL1~DL6。然而,由於進行點光SP之掃描之掃描單元Un之順序係預先決定,因此亦可準備各掃描單元Un(U1~U6)之圖案資料之各序列資料DL1~DL6組合後之一個圖案資料。亦即,亦可構築使各掃描單元Un(U1~U6)之圖案資料之各列之序列資料DLn(DL1~DL6)依據進行點光SP之掃描之掃描單元Un之順序排列之一個圖案資料。此情形,只要依據以各掃描單元Un(U1~U6)之原點感測器OPn為依據之副原點訊號ZPn(ZP1~ZP6),從第一列依序輸出一個圖案資料之序列資料DLn即可。In the fourth embodiment, pattern data is prepared for the scanning units Un (U1 to U6), and sequence data is output from the pattern data of each scanning unit Un (U1 to U6) according to the order of the scanning units Un for scanning the spot light SP DL1~DL6. However, since the order of the scanning units Un for scanning the spot light SP is determined in advance, it is also possible to prepare one pattern data after the combination of the sequence data DL1 to DL6 of the pattern data of each scanning unit Un (U1 to U6). That is, it is also possible to construct a pattern data in which the sequence data DLn (DL1 to DL6) of each row of the pattern data of each scanning unit Un (U1 to U6) are arranged according to the order of the scanning units Un to scan the spot light SP. In this case, as long as the secondary origin signal ZPn (ZP1~ZP6) based on the origin sensor OPn of each scanning unit Un (U1~U6) is output, a sequence data DLn of pattern data is sequentially output from the first row That's it.
然而,圖33所示之曝光控制部356控制旋轉控制部350、光束切換控制部352、及描繪資料輸出控制部354等。曝光控制部356解析對準顯微鏡AMm(AM1~AM4)拍攝之攝影訊號ig(ig1~ig4),檢測對準標記MKm(MK1~MK4)在基板FS上之位置。接著,曝光控制部356根據檢測出之對準標記MKm(MK1~MK4)之位置,檢測(決定)在基板FS上之曝光區域W之描繪曝光之開始位置。曝光控制部356具備計數器電路356a,計數器電路356a對圖24所示之編碼器EN1a~EN3a, EN1b~EN3b所檢測出之檢測訊號進行計數。曝光控制部356根據以檢測出描繪曝光之開始位置時之編碼器EN1a, EN1b為依據之計數值(標記檢測位置)、及以編碼器EN2a, EN2b為依據之計數值(奇數號描繪線SLn之位置),判斷基板FS之描繪曝光之開始位置是否位於描繪線SL1, SL3, SL5上。曝光控制部356,若判斷描繪曝光之開始位置位於描繪線SL1, SL3, SL5上,則控制描繪資料輸出控制部354,使掃描單元U1, U3, U5開始點光SP之掃描。此外,旋轉控制部350及光束切換構件352,在曝光控制部356之控制下,根據旋繞脈衝訊號及副原點訊號ZPn(ZP1~ZP6)控制各掃描單元Un(U1~U6)之多面鏡PM之旋轉及光束切換構件20進行之光束LBn之分配。However, the
曝光控制部356根據以檢測出描繪曝光之開始位置時之編碼器EN1a, EN1b為依據之計數值(標記檢測位置)、及以編碼器EN3a, EN3b為依據之計數值(偶數號描繪線之位置),判斷基板FS之描繪曝光之開始位置是否位於描繪線SL2, SL4, SL6上。曝光控制部356,若判斷描繪曝光之開始位置位於描繪線SL2, SL4, SL6上,則控制描繪資料輸出控制部354,使掃描單元U2, U4, U6開始點光SP之掃描。The
如上述圖25所示,依據基板FS之搬送方向(+X方向),先進行在描繪線SL1, SL3, SL5之各個之描繪曝光,在基板FS搬送既定距離後,進行在描繪線SL2, SL4, SL6之各個之描繪曝光。另一方面,由於六個掃描單元U1~U6之各多面鏡PM彼此保持一定角度相位進行旋轉控制,因此副原點訊號ZP1~ZP6,如圖34般具有依序時間Ts之相位差而持續產生。因此,在從在描繪線SL1, SL3, SL5之描繪曝光之開始時點至在描繪線SL2, SL4, SL6之描繪曝光之開始前一刻為止之期間,藉由副原點訊號ZP2, ZP4, ZP6開啟圖35中之閘部GT2, GT4, GT6,反覆選擇用光學元件AOM2, AOM4, AOM6在一定時間Ton成為ON之狀態。因此,圖33之構成中,在光束切換控制部352內設有選擇閘電路,該選擇閘電路根據在曝光控制部356判斷之編碼器EN1a, EN1b之計數值、或者編碼器EN2a, EN2b之計數值選擇是否禁止將產生之副原點訊號ZP1~ZP6之各個傳送至描繪資料輸出控制部354。一併地,亦對與掃描單元U1~U6之各個對應之選擇用光學元件AOM1~AOM6之各驅動器電路DRVn(DRV1~DRV6)(參照圖38),透過該選擇閘電路賦予副原點訊號ZP1~ZP6。As shown in FIG. 25 above, according to the transport direction (+X direction) of the substrate FS, firstly perform the drawing exposure on each of the drawing lines SL1, SL3, SL5, and after the substrate FS is transported a predetermined distance, perform the drawing on the drawing lines SL2, SL4 , SL6's individual depiction exposure. On the other hand, since the polygon mirrors PM of the six scanning units U1 to U6 maintain a certain angular phase with each other for rotation control, the secondary origin signals ZP1 to ZP6 have a phase difference of sequential time Ts as shown in FIG. 34 and continue to be generated . Therefore, during the period from the start of the drawing exposure of the drawing lines SL1, SL3, SL5 to the moment before the start of the drawing exposure of the drawing lines SL2, SL4, SL6, the sub-origin signals ZP2, ZP4, ZP6 are turned on The gate parts GT2, GT4, GT6 in Fig. 35, and the optical elements AOM2, AOM4, AOM6 for repeated selection are turned ON for a certain period of time. Therefore, in the configuration of FIG. 33, a selection gate circuit is provided in the beam switching
此處,如上述,由於描繪線SL1, SL3, SL5位於較描繪線SL2, SL4, SL6靠基板FS之搬送方向之上游側,因此基板FS之曝光區域W之描繪曝光之開始位置先到達描繪線SL1, SL3, SL5上,之後在一定時間,到達描繪線SL2, SL4, SL6上。因此,在描繪曝光之開始位置到達描繪線SL2, SL4, SL6之前,僅掃描單元U1, U3, U5進行圖案之描繪曝光。是以,未將如上述說明之副原點訊號ZP1~ZP6之選擇閘電路設在光束切換控制部352內之情形,曝光控制部356,藉由使輸出至光源裝置14’之驅動電路206a之描繪位元列資料Sdw中對應序列資料DL2, DL4, DL6之部分之像素資料全部成為低「(0)」,實質上取消掃描單元U2, U4, U6之描繪曝光。取消期間中,從記憶體部BM2, BM4, BM6輸出之序列資料DL2, DL4, DL6之列不會偏移而維持第一列。接著,曝光區域W之描繪曝光之開始位置到達描繪線SL2, SL4, SL6上後,開始序列資料DL2, DL4, DL6之輸出,進行序列資料DL2, DL4, DL6往列方向之偏移。Here, as described above, since the drawing lines SL1, SL3, SL5 are located on the upstream side of the transport direction of the substrate FS from the drawing lines SL2, SL4, SL6, the starting position of the drawing exposure of the exposure area W of the substrate FS first reaches the drawing line SL1, SL3, SL5, and then at a certain time, reach the drawing lines SL2, SL4, SL6. Therefore, before the start position of the drawing exposure reaches the drawing lines SL2, SL4, SL6, only the scanning units U1, U3, U5 perform the drawing exposure of the pattern. Therefore, in the case where the selection gate circuits of the sub-origin signals ZP1 to ZP6 as described above are not provided in the beam switching
又,同樣地,曝光區域W之描繪曝光之結束位置先到達描繪線SL1, SL3, SL5上,之後在一定時間,到達描繪線SL2, SL4, SL6上。因此,在描繪曝光之結束位置到達描繪線SL1, SL3, SL5之後、到達描繪線SL2, SL4, SL6為止前,僅掃描單元U2, U4, U6進行圖案之描繪曝光。因此,未將如上述說明之副原點訊號ZP1~ZP6之選擇閘電路設在光束切換控制部352內之情形,曝光控制部356,藉由使輸出至光源裝置14’之驅動電路206a之描繪位元列資料Sdw中對應序列資料DL1, DL3, DL5之部分之像素資料全部成為低「(0)」,實質上取消掃描單元U1, U3, U5之描繪曝光。此外,未設置選擇閘電路之情形,即使在描繪曝光取消中,亦以對描繪曝光被取消之掃描單元U1, U3, U5導入光束LB1, LB3, LB5之方式,選擇用光學元件AOM1, AOM3, AOM5反覆回應副原點訊號ZP1, ZP3, ZP5選擇性地在一定時間Ton成為ON狀態。Also, similarly, the end position of the drawing exposure of the exposure area W first reaches the drawing lines SL1, SL3, SL5, and then reaches the drawing lines SL2, SL4, SL6 at a certain time. Therefore, after the drawing exposure end position reaches the drawing lines SL1, SL3, SL5, and before reaching the drawing lines SL2, SL4, SL6, only the scanning units U2, U4, U6 perform the drawing exposure of the pattern. Therefore, in the case where the selection gate circuits of the secondary origin signals ZP1 to ZP6 as described above are not provided in the beam switching
如上述,在本第4實施形態,光束切換控制部352,以多面鏡PM之掃描(偏向)就各掃描單元Un(U1~U6)之多面鏡PM之每隔一個反射面RP反覆之方式,控制光束切換構件20,使複數個掃描單元Un(U1~U6)之各個依序進行點光SP之一維掃描。藉此,不縮短點光SP掃描之描繪線SLn(SL1~SL6)之長度即可將一個光束LB分配至複數個掃描單元Un(U1~U6),可有效地活用光束LB。又,由於能使多面鏡PM之形狀(多角形之形狀)接近圓形,因此可防止多面鏡PM之旋轉速度降低,能使多面鏡PM高速旋轉。As described above, in the fourth embodiment, the beam switching
光束切換構件20具有選擇用光學元件AOMn(AOM1~AOM6),該選擇用光學元件AOMn(AOM1~AOM6),沿著來自光源裝置14’之光束LB之行進方向直列配置有n個,選擇使光束LB繞射偏向後之n個光束LBn之任一個,導入對應之掃描單元Un。是以,能簡單地選擇光束LBn待入射之掃描單元Un(U1~U6)之任一個,使來自光源裝置14’之光束LB有效地集中於待描繪曝光之一個掃描單元Un,獲得高曝光量。例如,使用複數個分束器將來自光源裝置14’之射出之光束LB分割成六個振幅,將分割後之六個光束LBn(LB1~LB6)之各個透過描繪資料之序列資料DL1~DL6所調變之描繪用聲光調變元件導至六個掃描單元U1~U6之情形,若設在描繪用聲光調變元件之光束強度之衰減為20%、在掃描單元Un內之光束強度之衰減為30%,則在一個掃描單元Un之點光SP之強度,設原本之光束LB之強度為100%時,成為約9.3%。另一方面,如本第4實施形態般,藉由選擇用光學元件AOMn使來自光源裝置14’之光束LB偏向,欲射入六個掃描單元Un之任一個之情形,設在選擇用光學元件AOMn之光束強度之衰減為20%時,在一個掃描單元Un之點光SP之強度成為原本之光束LB之強度之約56%。The
旋轉控制部350,以旋轉速度彼此相同且旋轉角度位置之相位逐一錯開一定角度之方式,控制複數個掃描單元Un(U1~U6)之多面鏡PM之旋轉。藉此,在一個掃描單元Un進行之點光SP之一維掃描至進行下一個一維掃描前之期間,能依序進行其他複數個掃描單元Un進行之點光SP之一維掃描。The
此外,在上述第4實施形態,雖以將一個光束LB分配至六個掃描單元Un之形態進行說明,但亦可將來自光源裝置14’之一個光束LB分配至九個掃描單元Un(U1~U9)。此情形,若設多面鏡PM之掃描效率(α/β)為1/3,則在多面鏡PM旋轉三個反射面RP之期間,可將光束LBn分配至九個掃描單元U1~U9,因此點光SP之掃描成為每隔二個反射面RP進行。藉此,從一個掃描單元Un進行之點光SP之掃描至進行下一個點光SP之掃描之前,能使其他八個掃描單元Un依序進行點光SP之掃描。又,若設多面鏡PM之掃描效率為1/3,則多面鏡PM旋轉三個反射面RP,可將一個光束LB分配至九個掃描單元Un,因此副原點產生電路CAn之分頻器330將原點訊號SZn之產生時序之頻率分頻成1/3。此情形,掃描單元U1, U4, U7之旋繞脈衝訊號同步(在時間軸上為相同相位)。同樣地,掃描單元U2, U5, U8之旋繞脈衝訊號同步,掃描單元U3, U6, U9之旋繞脈衝訊號同步。此外,掃描單元U2, U5, U8之旋繞脈衝訊號相對於掃描單元U1, U4, U7之旋繞脈衝訊號延遲時間Ts產生,掃描單元U3, U6, U9之旋繞脈衝訊號相對於掃描單元U1, U4, U7之旋繞脈衝訊號延遲2×時間Ts產生。又,掃描單元U1, U4, U7之副原點訊號ZP1, ZP4, ZP7之產生時序,逐一錯開1週期之1/3相位,同樣地,掃描單元U2, U5, U8之副原點訊號ZP2, ZP5, ZP8之產生時序及掃描單元U3, U6, U9之副原點訊號ZP3, ZP6, ZP9之產生時序亦逐一錯開1週期之1/3相位。此外,時間Ts係多面鏡PM旋轉可進行點光SP之掃描之多面鏡PM之掃描旋轉角度範圍α’之時間,對多面鏡PM旋轉一個反射面RP之角度β乘上掃描效率之值成為掃描旋轉角度範圍α’。In the fourth embodiment described above, although one beam LB is distributed to six scanning units Un, one beam LB from the light source device 14' may be distributed to nine scanning units Un(U1~ U9). In this case, if the scanning efficiency (α/β) of the polygon mirror PM is set to 1/3, the light beam LBn can be distributed to the nine scanning units U1 to U9 while the polygon mirror PM rotates three reflection surfaces RP. The scanning of the spot light SP is performed every two reflection surfaces RP. Thereby, from the scanning of the spot light SP by one scanning unit Un to the scanning of the next spot light SP, the other eight scanning units Un can be sequentially scanned by the spot light SP. In addition, if the scanning efficiency of the polygon mirror PM is set to 1/3, the polygon mirror PM rotates three reflection surfaces RP, and a light beam LB can be distributed to the nine scanning units Un, so the frequency divider of the secondary origin
多面鏡PM之掃描效率為1/3,將一個光束LB分配至十二個掃描單元Un(U1~U12)之情形,在多面鏡PM旋轉四個反射面RP之期間,可將光束LBn分配至十二個掃描單元U1~U12,因此點光SP之掃描成為每隔三個反射面RP進行。又,若設多面鏡PM之掃描效率為1/3,則多面鏡PM旋轉四個反射面RP,可將以直列配置之十二個選擇用光學元件AOMn(AOM1~AOM12)使來自光源裝置14’之光束LB擇一偏向之光束LBn(LB1~LB12)射入對應之一個掃描單元Un(U1~U12),因此副原點產生電路CAn之分頻器330將原點訊號SZn之產生時序之頻率分頻成1/4。此情形,掃描單元U1, U4, U7, U10之旋繞脈衝訊號同步(在時間軸上為相同相位)。同樣地,掃描單元U2, U5, U8, U11之旋繞脈衝訊號同步,掃描單元U3, U6, U9, U12之旋繞脈衝訊號同步。此外,掃描單元U2, U5, U8, U11之旋繞脈衝訊號相對於掃描單元U1, U4, U7, U10之旋繞脈衝訊號延遲時間Ts產生,掃描單元U3, U6, U9, U12之旋繞脈衝訊號相對於掃描單元U1, U4, U7, U10之旋繞脈衝訊號延遲2×時間Ts產生。又,掃描單元U1, U4, U7, U10之副原點訊號ZP1, ZP4, ZP7, ZP10之產生時序,逐一錯開1週期之1/4相位,同樣地,掃描單元U2, U5, U8, U11之副原點訊號ZP2, ZP5, ZP8, ZP11之產生時序及掃描單元U3, U6, U9, U12之副原點訊號ZP3, ZP6, ZP9, ZP12之產生時序亦逐一錯開1週期之1/4相位。The scanning efficiency of the polygon mirror PM is 1/3. When one beam LB is distributed to the twelve scanning units Un (U1~U12), the beam LBn can be distributed to Twelve scanning units U1 to U12, so the scanning of the spot light SP is performed every three reflection surfaces RP. In addition, if the scanning efficiency of the polygon mirror PM is set to 1/3, the polygon mirror PM rotates the four reflection surfaces RP, and the twelve selection optical elements AOMn (AOM1 to AOM12) arranged in line can be brought from the
又,在上述第4實施形態,雖以掃描單元Un之多面鏡PM之掃描效率為1/3進行說明,但掃描效率亦可為1/2,亦可為1/4。掃描效率為1/2之情形,在多面鏡PM旋轉一個反射面RP之期間,能將光束LBn分配至二個掃描單元Un,因此欲將一個光束LBn分配至六個掃描單元Un時,點光SP之掃描成為就多面鏡PM之每隔二個反射面RP進行。亦即,多面鏡PM之掃描效率為1/2之情形,在多面鏡PM旋轉三個反射面RP之期間,能將光束LBn分配至六個掃描單元Un。藉此,在一個掃描單元Un進行之點光SP之掃描至進行下一個點光SP之掃描前,能使其他五個掃描單元Un依序進行點光SP之掃描。又,若設多面鏡PM之掃描效率為1/2,則多面鏡PM旋轉三個反射面RP,可將一個光束LB分配至六個掃描單元Un,因此副原點產生電路CAn之分頻器330將原點訊號SZn之產生時序之頻率分頻成1/3。此情形,掃描單元U1, U3, U5之旋繞脈衝訊號同步。同樣地,掃描單元U2, U4, U6之旋繞脈衝訊號同步。此外,掃描單元U2, U4, U6之旋繞脈衝訊號相對於掃描單元U1, U3, U5之旋繞脈衝訊號延遲時間Ts產生。又,掃描單元U1, U3, U5之副原點訊號ZP1, ZP3, ZP5之產生時序,逐一錯開1週期之1/3相位,掃描單元U2, U4, U6之副原點訊號ZP2, ZP4, ZP6之產生時序亦逐一錯開1週期之1/3相位。In addition, in the fourth embodiment described above, although the scanning efficiency of the polygon mirror PM of the scanning unit Un is 1/3, the scanning efficiency may be 1/2 or 1/4. When the scanning efficiency is 1/2, while the polygon mirror PM rotates one reflection surface RP, the light beam LBn can be distributed to the two scanning units Un, so when one beam LBn is to be distributed to the six scanning units Un, the spot light The scanning of SP becomes every two reflection surfaces RP of the polygon mirror PM. That is, in the case where the scanning efficiency of the polygon mirror PM is 1/2, while the polygon mirror PM rotates three reflection surfaces RP, the light beam LBn can be distributed to the six scanning units Un. Thereby, before the scanning of the spot light SP by one scanning unit Un to the scanning of the next spot light SP, the other five scanning units Un can be sequentially scanned by the spot light SP. In addition, if the scanning efficiency of the polygon mirror PM is set to 1/2, the polygon mirror PM rotates three reflection surfaces RP, and one beam LB can be distributed to the six scanning units Un, so the frequency divider of the secondary origin
多面鏡PM之掃描效率為1/4之情形,在多面鏡PM旋轉一個反射面RP之期間,能將光束LBn分配至四個掃描單元Un,因此欲將一個光束LB分配至八個掃描單元Un時,點光SP之掃描成為就多面鏡PM之每隔一個反射面RP進行。亦即,多面鏡PM之掃描效率為1/4之情形,在多面鏡PM旋轉二個反射面RP之期間,能將光束LBn分配至八個掃描單元Un。藉此,在一個掃描單元Un進行之點光SP之掃描至進行下一個點光SP之掃描前,能使其他七個掃描單元Un依序進行點光SP之掃描。又,若設多面鏡PM之掃描效率為1/4,則多面鏡PM旋轉二個反射面RP,可將一個光束LB分配至八個掃描單元Un,因此副原點產生電路CAn之分頻器330將原點訊號SZn之產生時序之頻率分頻成1/2。此情形,掃描單元U1, U5之旋繞脈衝訊號同步,掃描單元U2, U6之旋繞脈衝訊號同步。同樣地,掃描單元U3, U7之旋繞脈衝訊號同步,掃描單元U4, U8之旋繞脈衝訊號同步。此外,掃描單元U2, U6之旋繞脈衝訊號相對於掃描單元U1, U5之旋繞脈衝訊號延遲時間Ts產生。掃描單元U3, U7之旋繞脈衝訊號相對於掃描單元U1, U5之旋繞脈衝訊號延遲時間2×Ts產生,掃描單元U4, U8之旋繞脈衝訊號相對於掃描單元U1, U5之旋繞脈衝訊號延遲時間3×Ts產生。又,掃描單元U1, U5之副原點訊號ZP1, ZP5之產生時序,逐一錯開1週期之1/2相位,掃描單元U2, U6之副原點訊號ZP2, ZP6之產生時序亦逐一錯開1週期之1/2相位。同樣地,掃描單元U3, U7之副原點訊號ZP3, ZP7之產生時序及掃描單元U4, U8之副原點訊號ZP4, ZP8之產生時序亦分別逐一錯開1週期之1/2相位。When the scanning efficiency of the polygon mirror PM is 1/4, while the polygon mirror PM rotates one reflection surface RP, the light beam LBn can be distributed to four scanning units Un, so one beam LB is to be distributed to eight scanning units Un At this time, the scanning of the spot light SP is performed on every other reflecting surface RP of the polygon mirror PM. That is, when the scanning efficiency of the polygon mirror PM is 1/4, the light beam LBn can be distributed to the eight scanning units Un while the polygon mirror PM rotates the two reflection surfaces RP. Thereby, before the scanning of the spot light SP by one scanning unit Un to the scanning of the next spot light SP, the other seven scanning units Un can be sequentially scanned by the spot light SP. In addition, if the scanning efficiency of the polygon mirror PM is set to 1/4, the polygon mirror PM rotates two reflection surfaces RP, and one beam LB can be distributed to the eight scanning units Un, so the frequency divider of the sub-origin
又,在上述第4實施形態,雖設多面鏡PM之形狀為八角形(反射面RP為八個),但亦可為六角形、七角形,亦可為九角形以上。藉此,多面鏡PM之掃描效率亦改變。一般而言,多角形之形狀之多面鏡PM之反射面數Np愈多,則在多面鏡PM之一個反射面RP之掃描效率愈大,反射面數Np愈少,則多面鏡PM之掃描效率愈小。In addition, in the fourth embodiment described above, although the shape of the polygon mirror PM is octagonal (eight reflection surfaces RP are eight), it may be hexagonal, heptagonal, or more than a pentagonal. With this, the scanning efficiency of the polygon mirror PM also changes. Generally speaking, the more the number of reflecting surfaces Np of the polygon mirror PM, the greater the scanning efficiency of one reflecting surface RP of the polygon mirror PM, and the smaller the number of reflecting surfaces Np, the scanning efficiency of the polygon mirror PM The smaller.
可對基板FS上投射點光SP並掃描之多面鏡PM之最大掃描旋轉角度範圍α係以fθ透鏡FT之入射角(相當於圖32中之角度θs),因此可對應其入射角選擇最適當之反射面數Np之多面鏡PM。如上例,在入射角(θs)未滿30度之fθ透鏡FT之情形,亦可為反射面RP在其一半之15度之旋轉改變之二十四面之多面鏡PM、或者反射面RP在30度之旋轉改變之十二面之多面鏡PM。此情形,在二十四面之多面鏡PM,掃描效率(α/β)為大於1/2且小於1.0之狀態,因此以六個掃描單元U1~U6之各個之二十四面之多面鏡PM跳過五面進行點光SP之掃描之方式控制。又,在十二面之多面鏡PM,掃描效率為大於1/3且未滿1/2之狀態,因此以六個掃描單元U1~U6之各個之十二面之多面鏡PM跳過二面進行點光SP之掃描之方式控制。The maximum scanning rotation angle range α of the polygon mirror PM that can project and scan the spot light SP on the substrate FS is the angle of incidence of the fθ lens FT (equivalent to the angle θs in FIG. 32), so the most appropriate angle of incidence can be selected The reflection surface number Np is the polygon mirror PM. As in the above example, in the case of an fθ lens FT with an incident angle (θs) less than 30 degrees, it can also be a twenty-four polygon mirror PM whose reflection surface RP changes at a rotation of 15 degrees of its half, or the reflection surface RP is at Twelve-sided polygon mirror PM with 30 degree rotation change. In this case, in the twenty-four polygon mirror PM, the scanning efficiency (α/β) is greater than 1/2 and less than 1.0, so the twenty-four polygon mirror of each of the six scanning units U1 to U6 PM skips the five sides to control the scanning mode of the spot light SP. In addition, in the twelve-sided polygon mirror PM, the scanning efficiency is greater than 1/3 and less than 1/2, so the twelve-sided polygon mirror PM of each of the six scanning units U1 to U6 skips the two sides Control the scanning mode of spot light SP.
(第5實施形態) 在上述第4實施形態,點光SP之掃描(偏向)恆就多面鏡PM之每隔一個反射面RP反覆。然而,在第5實施形態,點光SP之掃描(偏向)可任意切換成就多面鏡PM之連續之反射面RP反覆之第1狀態、就多面鏡PM之每隔一個反射面RP反覆之第2狀態。亦即,掃描單元U1開始點光SP之掃描至下一次掃描開始前,可切換以分時方式將光束LB分配至三個掃描單元Un、以分時方式分配至六個掃描單元Un。 (Fifth Embodiment) In the fourth embodiment described above, the scanning (deflection) of the spot light SP is repeated on every other reflection surface RP of the polygon mirror PM. However, in the fifth embodiment, the scanning (deflection) of the spot light SP can be arbitrarily switched to the first state where the continuous reflection surface RP of the polygon mirror PM is repeated, and the second state is repeated for every other reflection surface RP of the polygon mirror PM status. That is, the scanning unit U1 starts scanning of the spot light SP until the start of the next scanning, and can switch to distribute the light beam LB to the three scanning units Un in a time-sharing manner and to the six scanning units Un in a time-sharing manner.
由於多面鏡PM之掃描效率為1/3,因此使點光SP之掃描就多面鏡PM之連續之反射面RP反覆之情形,例如,在掃描單元U1使點光SP掃描至進行下一次掃描之期間,僅能將光束LB分配至掃描單元U1以外之二個掃描單元Un。是以,準備二個光束LB,以分時方式將第一個光束LB分配至三個掃描單元Un,以分時方式將第二個光束LB分配至其餘三個掃描單元Un。是以,點光SP之掃描並行地藉由二個掃描單元Un進行。亦可藉由設置二個光源裝置14’產生二個光束LB,亦可藉由分束器等將來自一個光源裝置14’之光束LB分割以產生二個光束LB。在圖36~圖40所示之本第5實施形態之曝光裝置EX,具備二個光源裝置14’(14A’, 14B’)(參照圖38)。此外,在第5實施形態,對與上述第4實施形態相同之構成賦予相同參照符號,僅說明不同部分。Since the scanning efficiency of the polygon mirror PM is 1/3, the scanning of the spot light SP is repeated by the continuous reflection surface RP of the polygon mirror PM. For example, the scanning unit U1 scans the spot light SP to the next scan. During this period, only the light beam LB can be distributed to the two scanning units Un other than the scanning unit U1. Therefore, two light beams LB are prepared, the first light beam LB is distributed to the three scanning units Un in a time-sharing manner, and the second light beam LB is distributed to the remaining three scanning units Un in a time-sharing manner. Therefore, the scanning of the spot light SP is performed by the two scanning units Un in parallel. It is also possible to generate two light beams LB by arranging two light source devices 14', or to split the light beam LB from one light source device 14' by a beam splitter or the like to generate two light beams LB. The exposure apparatus EX of the fifth embodiment shown in FIGS. 36 to 40 includes two light source devices 14' (14A', 14B') (see FIG. 38). In addition, in the fifth embodiment, the same reference numerals are given to the same configuration as the fourth embodiment described above, and only the different parts will be described.
圖36係本第5實施形態之光束切換構件(光束配送單元)20A之構成圖。光束切換構件20A,與圖26之光束切換構件20同樣地,具有複數個選擇用光學元件AOMn(AOM1~AOM6)、複數個聚光透鏡CD1~CD6、複數個反射鏡M1~M12、複數個反射鏡IM1~IM6、及複數個準直鏡CL1~CL6,此外,具有反射鏡M13, M14與吸收體TR1, TR2。此外,吸收體TR1相當於在上述第4實施形態所示之圖26之吸收體TR,吸收被反射鏡M12反射之光束LB。Fig. 36 is a configuration diagram of a beam switching member (beam distribution unit) 20A of the fifth embodiment. The
選擇用光學元件AOM1~AOM3構成光學元件模組(第1光學元件模組)OM1,選擇用光學元件AOM4~AOM6構成光學元件模組(第2光學元件模組)OM2。此第1光學元件模組OM1之選擇用光學元件AOM1~AOM3,如在上述第4實施形態所說明,為沿著光束LB之行進方向直列排列之狀態。同樣地,第2光學元件模組OM2之選擇用光學元件AOM4~AOM6亦為沿著光束LB之行進方向直列配置之狀態。此外,設對應第1光學元件模組OM1之選擇用光學元件AOM1~AOM3之掃描單元U1~U3為第1掃描模組。又,設對應第2光學元件模組OM2之選擇用光學元件AOM4~AOM6之掃描單元U4~U6為第2掃描模組。此第1掃描模組之掃描單元U1~U3及第2掃描模組之掃描單元U4~U6,如在上述第4實施形態所說明,係以既定配置關係配置。The optical elements AOM1 to AOM3 for selection constitute the optical element module (first optical element module) OM1, and the optical elements AOM4 to AOM6 for selection constitute the optical element module (second optical element module) OM2. The selection optical elements AOM1 to AOM3 of the first optical element module OM1 are in a state of being arranged in line along the traveling direction of the light beam LB as described in the fourth embodiment described above. Similarly, the selection optical elements AOM4 to AOM6 of the second optical element module OM2 are also arranged in a line along the traveling direction of the light beam LB. In addition, the scanning units U1 to U3 corresponding to the selection optical elements AOM1 to AOM3 corresponding to the first optical element module OM1 are set as the first scanning module. In addition, the scanning units U4 to U6 of the selection optical elements AOM4 to AOM6 corresponding to the second optical element module OM2 are set as the second scanning module. The scanning units U1 to U3 of the first scanning module and the scanning units U4 to U6 of the second scanning module are arranged in a predetermined arrangement relationship as described in the fourth embodiment above.
在第5實施形態,反射鏡M6, M13, M14在光束LB之行進方向構成配置切換構件(可動構件)SWE,該配置切換構件(可動構件)SWE切換第1光學元件模組OM1與第2光學元件模組OM2並列配置之第1配置狀態、第1光學元件模組OM1與第2光學元件模組OM2直列配置之第2配置狀態。此配置切換構件SWE具有支承反射鏡M6, M13, M14之滑動構件SE,滑動構件SE可相對於支承構件IUB往X方向移動。此滑動構件SE(配置切換構件SWE)往X方向之移動係藉由致動器AC(參照圖38)進行。此致動器AC係藉由光束切換構件352之驅動控制部352a(參照圖38)之控制而驅動。In the fifth embodiment, the mirrors M6, M13, and M14 constitute an arrangement switching member (movable member) SWE in the traveling direction of the light beam LB, and the arrangement switching member (movable member) SWE switches the first optical element module OM1 and the second optical The first arrangement state in which the element modules OM2 are arranged in parallel, and the second arrangement state in which the first optical element modules OM1 and the second optical element modules OM2 are arranged in line. The configuration switching member SWE has a sliding member SE that supports the mirrors M6, M13, and M14. The sliding member SE can move in the X direction relative to the supporting member IUB. The movement of the sliding member SE (configuration switching member SWE) in the X direction is performed by an actuator AC (refer to FIG. 38). This actuator AC is driven by the control of the
在第1配置狀態時,成為來自二個光源裝置14’(14A’, 14B’)之光束LB並行地射入第1光學元件模組OM1與第2光學元件模組OM2之各個之狀態,在第2配置狀態時,成為來自一個光源裝置14’(14A’)之光束LB射入第1光學元件模組OM1與第2光學元件模組OM2之狀態。亦即,在第2配置狀態時,透射過第1光學元件模組OM1之光束LB射入第2光學元件模組OM2。圖36係顯示藉由配置切換構件SWE成為第1光學元件模組OM1與第2光學元件模組OM2直列配置之第2配置狀態時之狀態。亦即,在第2配置狀態時,成為第1光學元件模組OM1與第2光學元件模組OM2之所有選擇用光學元件AOM1~AOM6沿著光束LB之行進方向直列配置之狀態,與在上述第4實施形態所示之圖26相同。是以,與上述第4實施形態相同,可藉由直列配置之第1光學元件模組OM1及第2光學元件模組OM2之各選擇用光學元件AOMn(AOM1~AOM6)從第1掃描模組及第2掃描模組(U1~U6)中選擇一個任一個偏向之光束LBn射入之掃描單元Un。此外,將圖36時之配置切換構件SWE之位置稱為第2位置。又,在第1配置狀態時,將射入第1光學元件模組OM1(AOM1~AOM3)之光束LB稱為來自第1光源裝置14A’之光束LBa,在第1配置狀態時,將射入第2光學元件模組OM2(AOM4~AOM6)之光束稱為來自第2光源裝置14B’之光束LBb。In the first arrangement state, the light beam LB from the two light source devices 14' (14A', 14B') enters the first optical element module OM1 and the second optical element module OM2 in parallel. In the second arrangement state, the light beam LB from one light source device 14' (14A') enters the first optical element module OM1 and the second optical element module OM2. That is, in the second arrangement state, the light beam LB transmitted through the first optical element module OM1 enters the second optical element module OM2. FIG. 36 shows a state where the second switching state in which the first optical element module OM1 and the second optical element module OM2 are arranged in line by the arrangement switching member SWE. That is, in the second arrangement state, all the selection optical elements AOM1 to AOM6 of the first optical element module OM1 and the second optical element module OM2 are arranged in parallel along the traveling direction of the light beam LB, and Fig. 26 shown in the fourth embodiment is the same. Therefore, as in the fourth embodiment described above, the optical elements for selection AOMn (AOM1 to AOM6) of the first optical element module OM1 and the second optical element module OM2 arranged in line can be selected from the first scanning module In the second scanning module (U1~U6), select any scanning unit Un where any deflected light beam LBn enters. In addition, the position where the arrangement switching member SWE in FIG. 36 is referred to as the second position. In the first arrangement state, the light beam LB incident on the first optical element module OM1 (AOM1~AOM3) is referred to as the light beam LBa from the first
配置切換構件SWE往-X方向側移動來到第1位置後,第1光學元件模組OM1與第2光學元件模組OM2成為並列配置之第1配置狀態。圖37係顯示配置切換構件SWE之位置成為第1位置時之光束LBa, LBb之光路之圖。在第1配置狀態時,光束LBa射入第1光學元件模組OM1,光束LBb射入第2光學元件模組OM2。為了區別射入第1光學元件模組OM1及第2光學元件模組OM2之各個之光束LB,以LBa表示射入第1光學元件模組OM1之光束LB,以LBb表示直接射入第2光學元件模組OM2之光束LB。After the arrangement switching member SWE moves to the -X direction side to the first position, the first optical element module OM1 and the second optical element module OM2 are placed in the first arrangement state of the parallel arrangement. FIG. 37 is a diagram showing the optical paths of the light beams LBa and LBb when the position where the switching member SWE is arranged becomes the first position. In the first arrangement state, the light beam LBa enters the first optical element module OM1, and the light beam LBb enters the second optical element module OM2. In order to distinguish the light beam LB incident on each of the first optical element module OM1 and the second optical element module OM2, the light beam LB incident on the first optical element module OM1 is represented by LBa, and the second optics is directly incident on LBb Beam LB of component module OM2.
如圖37所示,配置切換構件SWE移動至第1位置後,反射鏡M6之位置往-X方向偏移,因此被反射鏡M6反射之光束LBa並非射入反射鏡M7而是射入吸收體TR2。是以,來自射入第1光學元件模組OM1之第1光源裝置14A’之光束LBa僅射入第1光學元件模組OM1(選擇用光學元件AOM1~AOM3),不會射入第2光學元件模組OM2。亦即,光束LBa僅能透射過選擇用光學元件AOM1~AOM3。又,配置切換構件SWE之位置成為第1位置後,從第2光源裝置14B’射出後朝向反射鏡M13往+Y方向行進之光束LBb係藉由反射鏡M13, M14導至反射鏡M7。是以,光束LBb僅能透射過第2光學元件模組OM2(選擇用光學元件AOM4~AOM6)。As shown in FIG. 37, after the arrangement switching member SWE moves to the first position, the position of the mirror M6 shifts to the -X direction, so the light beam LBa reflected by the mirror M6 does not enter the mirror M7 but enters the absorber TR2. Therefore, the light beam LBa from the first
是以,第1光學元件模組OM1可藉由直列配置之三個選擇用光學元件AOM1~AOM3使從光束LBa偏向之光束LB1~LB3之任一個射入構成第1掃描模組之三個掃描單元U1~U3中一個。又,第2光學元件模組OM2可藉由直列配置之三個選擇用光學元件AOM4~AOM6使從光束LBb偏向之光束LB4~LB6之任一個射入構成第2掃描模組之三個掃描單元U4~U6中一個。是以,藉由並列配置之第1光學元件模組OM1(選擇用光學元件AOM1~AOM3)與第2光學元件模組OM2(選擇用光學元件AOM4~AOM6),可從第1掃描模組(U1~U3)與第2掃描模組(U4~U6)中分別選擇一個光束LB射入之掃描單元Un。此情形,藉由第1掃描模組之任一個掃描單元Un與第2掃描模組之任一個掃描單元Un並行地進行沿著點光SP之描繪線SLn之掃描之曝光動作。Therefore, the first optical element module OM1 can make any one of the light beams LB1 to LB3 deflected from the light beam LBa enter the three scans constituting the first scan module by the three selection optical elements AOM1 to AOM3 arranged in line One of the units U1~U3. In addition, the second optical element module OM2 can make any one of the light beams LB4 to LB6 deflected from the light beam LBb enter the three scanning units constituting the second scanning module by three in-line arranged optical elements AOM4 to AOM6 One of U4~U6. Therefore, by arranging the first optical element module OM1 (selection optical elements AOM1~AOM3) and the second optical element module OM2 (selection optical elements AOM4~AOM6) in parallel, the first scanning module ( U1~U3) and the second scanning module (U4~U6) respectively select a scanning unit Un into which the light beam LB enters. In this case, any scanning unit Un of the first scanning module and any scanning unit Un of the second scanning module perform the exposure operation of scanning along the drawing line SLn of the spot light SP in parallel.
光束切換控制部352,在點光SP之掃描(偏向)就多面鏡PM之連續之反射面RP反覆之第1狀態(第1描繪模式)之情形,控制致動器AC使配置切換構件SWE配置在第1位置。又,光束切換控制部352,在就多面鏡PM之每隔一個反射面RP反覆之第2狀態(第2描繪模式)之情形,控制致動器AC使配置切換構件SWE配置在第2位置。The beam
圖38係顯示第5實施形態之光路切換控制部352之構成之圖。圖38中,亦圖示作為光路切換控制部352之控制對象之選擇用光學元件AOM1~AOM6及光源裝置14’(14A’, 14B’)。以14A’表示從第1光學元件模組OM1使光束LBa射入之光源裝置14’,以14B’表示從第2光學元件模組OM2使光束LBb直接射入之光源裝置14’。FIG. 38 is a diagram showing the configuration of the optical path switching
配置切換構件SWE位在第2位置時,如圖38所示,來自光源裝置14A’之光束LBa(LB)能以AOM1→AOM2→AOM3→…→AOM6之順序通過(透射過)選擇用光學元件AOMn,通過選擇用光學元件AOM6之光束LBa射入吸收體TR1。又,配置切換構件SWE移動至第1位置後,光束LBa可從光源裝置14A’以AOM1→AOM2→AOM3之順序通過選擇用光學元件AOMn,通過選擇用光學元件AOM3之光束LBa射入吸收體TR2。再者,在配置切換構件SWE移動至第1位置之狀態下,來自光源裝置14B’之光束LBb可以AOM4→AOM5→AOM6之順序通過選擇用光學元件AOMn,通過選擇用光學元件AOM6之光束LB射入吸收體TR1。此外,圖38之配置切換構件SWE為概念圖,與圖36、圖37所示之配置切換構件SWE之實際構成不同。在圖38所示之例,配置切換構件SWE位於第2位置,亦即,處於第1光學元件模組OM1與第2光學元件模組OM2直列配置之第2配置狀態,表示選擇用光學元件AOM5為ON狀態之情形。藉此,來自光源裝置14A’之光束LBa藉由繞射偏向之光束LB5射入掃描單元U5。When the configuration switching member SWE is in the second position, as shown in FIG. 38, the light beam LBa (LB) from the
光束切換控制部352具有以超音波(高頻)訊號驅動選擇用光學元件AOM1~AOM6之各個之驅動器電路DRVn(DRV1~DRV6)、依據來自各掃描單元Un(U1~U6)之原點感測器OPn之原點訊號SZn(SZ1~SZ6)產生副原點訊號ZPn(ZP1~ZP6)之副原點產生電路CAan(CAa1~CAa6)。從曝光控制部356對驅動器電路DRVn(DRV1~DRV6)傳送接受副原點訊號ZPn(ZP1~ZP6)後一定時間使選擇用光學元件AOM1~AOM6成為ON狀態之ON時間Ton之資訊。驅動器電路DRV1,在副原點訊號ZP1從副原點產生電路CAa1傳來後,使選擇用光學元件AOM1在ON時間Ton成為ON狀態。同樣地,驅動器電路DRV2~DRV6,在副原點訊號ZP2~ZP6從副原點產生電路CAa2~CAa6傳來後,使選擇用光學元件AOM2~AOM6在ON時間Ton成為ON狀態。曝光控制部356,在改變多面鏡PM之旋轉速度之情形,對應地改變ON時間Ton之長度。此外,驅動器電路DRVn(DRV1~DRV6)亦同樣地設在上述第4實施形態之圖33之光束切換控制部352中。The beam
副原點產生電路CAan(CAa1~CAa6)具有邏輯電路LCC與延遲電路332。在副原點產生電路CAan(CAa1~CAa6)之邏輯電路LCC輸入有來自各掃描單元Un(U1~U6)之原點感測器OPn之原點訊號SZn(SZ1~SZ6)。亦即,在副原點產生電路CAa1之邏輯電路LCC輸入有原點訊號SZ1,同樣地,在副原點產生電路CAa2~CAa6之邏輯電路LCC輸入有原點訊號SZ2~SZ6。又,在各副原點產生電路CAan(CAa1~CAa6)之邏輯電路LCC輸入有狀態訊號STS。此狀態訊號(邏輯值)STS,在就多面鏡PM之連續之反射面RP反覆之第1狀態之情形,設定成「1」,在就多面鏡PM之每隔一個反射面RP反覆之第2狀態之情形,設定成「0」。此狀態訊號STS係從曝光控制部356傳送。The secondary origin generating circuit CAan (CAa1~CAa6) has a logic circuit LCC and a
各邏輯電路LCC根據輸入之原點訊號SZn(SZ1~SZ6)產生原點訊號SZn’(SZ1’~SZ6’),輸出至各延遲電路332。各延遲電路332使輸入之原點訊號SZn’(SZ1’~SZ6’)延遲時間Tpx,輸出副原點訊號ZPn(ZP1~ZP6)。Each logic circuit LCC generates an origin signal SZn' (SZ1'~SZ6') according to the input origin signal SZn (SZ1~SZ6), and outputs it to each
圖39係顯示輸入原點訊號SZn(SZ1~SZ6)與狀態訊號STS之邏輯電路LCC之構成之圖。邏輯電路LCC係以2輸入之OR閘LC1、2輸入之AND閘LC2、及單次照射脈衝產生器LC3構成。狀態訊號STS係施加為OR閘LC1之一方之輸入訊號。OR閘LC1之輸出訊號(邏輯值)係施加為AND閘LC2之一方之輸入訊號,原點訊號SZn係施加為AND閘LC2之另一方之輸入訊號。AND閘LC2之輸出訊號(邏輯值)係作為原點訊號SZn’輸入延遲電路332。單次照射脈衝產生器LC3,一般而言,輸出邏輯值「1」之訊號SDo,但若原點訊號SZn’(SZ1’~SZ6’)產生,則一定時間Tdp輸出邏輯值「0」之訊號SDo。亦即,單次照射脈衝產生器LC3,若原點訊號SZn’(SZ1’~SZ6’)產生,則一定時間Tdp使訊號SDo之邏輯值反轉。時間Tdp係設定成2×Tpx>Tdp>Tpx之關係,較佳為,設定成Tdp≒1.5×Tpx。Fig. 39 is a diagram showing the structure of the logic circuit LCC that inputs the origin signal SZn (SZ1~SZ6) and the status signal STS. The logic circuit LCC is composed of a 2-input OR gate LC1, a 2-input AND gate LC2, and a single irradiation pulse generator LC3. The status signal STS is applied as an input signal to one side of the OR gate LC1. The output signal (logic value) of the OR gate LC1 is applied as the input signal of one side of the AND gate LC2, and the origin signal SZn is applied as the input signal of the other side of the AND gate LC2. The output signal (logic value) of the AND gate LC2 is input to the
圖40係顯示說明圖39之邏輯電路LCC之動作之時序圖。圖40之左半部分係顯示各掃描單元Un(U1~U6)進行之點光SP之掃描不會跳面而就連續之反射面RP進行之第1狀態之情形,右半部分係顯示各掃描單元Un(U1~U6)進行之點光SP之掃描跳過一個反射面RP進行之第2狀態之情形。此外,圖40中,為了方便說明,設多面鏡PM之相鄰反射面RP(例如,反射面RPa與反射面RPb)彼此之各夾角ηj無誤差,原點訊號SZn以時間Tpx間隔正確地產生。40 is a timing diagram illustrating the operation of the logic circuit LCC of FIG. 39. The left half of FIG. 40 shows the scanning of the spot light SP performed by each scanning unit Un (U1~U6) without jumping, and the first state of the continuous reflection surface RP is performed. The right half shows each scan The case where the scanning of the spot light SP by the unit Un (U1~U6) skips over the second state of a reflective surface RP. In addition, in FIG. 40, for convenience of description, it is assumed that the angle ηj between adjacent reflection surfaces RP (for example, reflection surface RPa and reflection surface RPb) of the polygon mirror PM has no error, and the origin signal SZn is correctly generated at time Tpx intervals .
點光SP之掃描不會跳面而就反射面RP進行之第1狀態時,由於狀態訊號STS為「1」,因此OR閘LC1之輸出訊號,不論訊號SDo之狀態為何,恆為「1」。是以,從AND閘LC2輸出之輸出訊號(原點訊號SZn’)與原點訊號SZn在相同時序輸出。亦即,第1狀態時,原點訊號SZn與原點訊號SZn’可視為相同。第1狀態時,施加於單次照射脈衝產生器LC3之原點訊號SZn’之時間間隔Tpx小於時間Tpd。因此,來自單次照射脈衝產生器LC3之訊號SDo維持「0」。此外,即使多面鏡PM之反射面RP彼此之各夾角ηj有誤差之情形,原點訊號SZn’之時間間隔小於時間Tpd亦不會改變。When the scanning of the spot light SP does not skip the surface and the first state is performed on the reflecting surface RP, since the state signal STS is "1", the output signal of the OR gate LC1 is always "1" regardless of the state of the signal SDo . Therefore, the output signal (origin signal SZn') output from the AND gate LC2 is output at the same timing as the origin signal SZn. That is, in the first state, the origin signal SZn and the origin signal SZn' can be regarded as the same. In the first state, the time interval Tpx of the origin signal SZn' applied to the single irradiation pulse generator LC3 is less than the time Tpd. Therefore, the signal SDo from the single irradiation pulse generator LC3 remains "0". In addition, even if the angle ηj between the reflection surfaces RP of the polygon mirror PM is in error, the time interval of the origin signal SZn' is less than the time Tpd will not change.
若成為點光SP之掃描跳過一個反射面RP進行之第2狀態,則狀態訊號STS切換成「0」。因此,OR閘LC1之輸出訊號僅在訊號SDo為「1」時成為「1」。在訊號SDo為「1」之狀態下(此情形,OR閘LC1之輸出訊號亦為「1」之狀態),若施加原點訊號SZn(為了方便,將此原點訊號SZn稱為第一個原點訊號SZn),則回應此,AND閘LC2亦輸出原點訊號SZn’。然而,若產生原點訊號SZn’,則來自單次照射脈衝產生器LC3之訊號SDo僅時間Tpd變化成「0」。因此,時間Tpd之期間,OR閘LC1之2輸出皆成為「0」之訊號,因此OR閘LC1之輸出訊號維持「0」。藉此,時間Tpd之期間,AND閘LC2之輸出訊號亦維持「0」。是以,即使在經過時間Tpd前對AND閘LC2施加第二個原點訊號SZn,AND閘LC2亦不會輸出原點訊號SZn’。If it becomes the second state where the scanning of the spot light SP skips over one reflecting surface RP, the state signal STS is switched to "0". Therefore, the output signal of the OR gate LC1 becomes "1" only when the signal SDo is "1". In the state where the signal SDo is "1" (in this case, the output signal of the OR gate LC1 is also "1"), if the origin signal SZn is applied (for convenience, this origin signal SZn is called the first Origin signal SZn), then respond to this, AND gate LC2 also outputs origin signal SZn'. However, if the origin signal SZn' is generated, the signal SDo from the single irradiation pulse generator LC3 changes to "0" only for the time Tpd. Therefore, during the time Tpd, both outputs of the OR gate LC1 become "0" signals, so the output signal of the OR gate LC1 remains "0". Thus, during the time Tpd, the output signal of the AND gate LC2 also maintains "0". Therefore, even if the second origin signal SZn is applied to the AND gate LC2 before the elapsed time Tpd, the AND gate LC2 will not output the origin signal SZn'.
接著,經過時間Tpd後,來自單次照射脈衝產生器LC3之訊號SDo反轉成「1」,因此與上述第一個原點訊號SZn之情形相同,在經過時間Tpd後施加之第三個原點訊號SZn所對應之原點訊號SZn’從AND閘LC2輸出。藉由反覆上述動作,邏輯電路LCC將就時間Tpx反覆產生之原點訊號SZn轉換成就2×時間Tpx反覆產生之原點訊號SZn’。若從另一觀點觀之,邏輯電路LCC每隔一個就時間Tpx反覆產生之原點訊號SZn之脈衝產生隔開之原點訊號SZn’,亦即,將原點訊號SZn之產生時序之頻率分頻成1/2。此外,亦可將副原點產生電路CAan之邏輯電路LCC置換成在上述第4實施形態說明之副原點產生電路CAn之分頻器330(圖31)。置換成分頻器330之情形,只要分頻器330在第2狀態時將原點訊號SZn分頻成1/2,又,在第1狀態時不對原點訊號SZn進行分頻即可。又,亦可將上述第4實施形態之副原點產生電路Can置換成本第5實施形態之副原點產生電路CAan。此外,第2狀態之情形,從副原點產生電路CAa1之邏輯電路LCC輸出之原點訊號SZ1’與從副原點產生電路CAa4之邏輯電路LCC輸出之原點訊號SZ4’錯開半週期相位。同樣地,從副原點產生電路CAa2, CAa3之邏輯電路LCC輸出之原點訊號SZ2’, SZ3’與從副原點產生電路CAa5, CAa6之邏輯電路LCC輸出之原點訊號SZ5’, SZ6’錯開半週期相位。Then, after the time Tpd has elapsed, the signal SDo from the single irradiation pulse generator LC3 is inverted to "1", so it is the same as the case of the first origin signal SZn described above, and the third source applied after the time Tpd The origin signal SZn' corresponding to the point signal SZn is output from the AND gate LC2. By repeating the above actions, the logic circuit LCC will convert the origin signal SZn generated repeatedly over time Tpx into the origin signal SZn’ generated repeatedly over 2×time Tpx. If viewed from another point of view, the logic circuit LCC repeatedly generates pulses of the origin signal SZn that are repeatedly generated for the time Tpx to generate the origin signal SZn' separated, that is, to divide the frequency of the timing of the origin signal SZn generation Frequency is 1/2. In addition, the logic circuit LCC of the sub-origin generating circuit CAan may be replaced with the
如上述,僅使輸入光束切換控制部352之各副原點產生電路CAa1~CAa6之邏輯電路LCC之狀態訊號STS之值反轉,即可任意地切換就多面鏡PM之連續之反射面RP反覆點光SP之掃描進行之描繪曝光之第1狀態、就多面鏡PM之每隔一個反射面RP反覆點光SP之掃描進行之描繪曝光之第2狀態。As described above, by simply inverting the value of the state signal STS of the logic circuits LCC of the sub-origin generating circuits CAa1 to CAa6 of the input beam switching
此外,在本第5實施形態,各掃描單元Un(U1~U6)之多面鏡PM之旋轉控制與上述第4實施形態相同。亦即,以從各掃描單元Un(U1~U6)之原點感測器OPn輸出之原點訊號SZn(SZ1~SZ6)具有圖34所示之關係之方式,控制各掃描單元Un(U1~U6)之多面鏡PM之旋轉。是以,點光SP之掃描不會跳面而就反射面RP進行之第1狀態時,掃描單元U1~U3能以U1→U2→U3之順序反覆進行點光SP之掃描,掃描單元U4~U6能以U4→U5→U6之順序反覆進行點光SP之掃描。In addition, in the fifth embodiment, the rotation control of the polygon mirror PM of each scanning unit Un (U1 to U6) is the same as the fourth embodiment described above. That is, each scanning unit Un(U1~ is controlled in such a way that the origin signal SZn(SZ1~SZ6) output from the origin sensor OPn of each scanning unit Un(U1~U6) has the relationship shown in FIG. 34 U6) The rotation of the polygon mirror PM. Therefore, when the scanning of the spot light SP does not skip the surface and the first state is performed on the reflecting surface RP, the scanning units U1~U3 can repeatedly scan the spot light SP in the order of U1→U2→U3, and the scanning unit U4~ U6 can scan the spot light SP repeatedly in the order of U4→U5→U6.
較佳為,設定在此單次照射脈衝產生器LC3之時間Tpd可依據來自曝光控制部356之多面鏡PM之旋轉速度之資訊變更。又,不限於跳過一面,即使跳過二面使點光SP掃描之情形,若為圖39之構成,僅將時間Tpd設定成(n+1)×Tpx>Tdp>n×Tpx之關係即可對應。此外,n表示跳過之反射面RP之數。例如,n為2之情形,意指點光SP之掃描每隔二個反射面RP進行,n為3之情形,意指點光SP之掃描每隔三個反射面RP進行。Preferably, the time Tpd set in this single irradiation pulse generator LC3 can be changed according to the information of the rotation speed of the polygon mirror PM from the
接著,簡單說明在點光SP之掃描不會跳面而就反射面RP進行之第1狀態時,描繪資料輸出控制部354進行之對光源裝置14A’, 14B’之驅動電路206a之描繪位元列資料Sdw之輸出控制。第1狀態時,以第1掃描模組(掃描單元U1~U3)與第2掃描模組(掃描單元U4~U6)並行地進行點光SP之掃描。因此,描繪資料輸出控制部354,對射出射入第1掃描模組之光束LBa之光源裝置14A’之驅動電路206a輸出掃描單元U1~U3之各個所對應之序列資料DL1~DL3時序地合成後之描繪位元列資料Sdw,對射出射入第2掃描模組之光束LBb之光源裝置14B’之驅動電路206a輸出掃描單元U4~U6之各個所對應之序列資料DL4~DL6時序地合成後之描繪位元列資料Sdw。Next, the drawing bit of the
又,圖35所示之描繪資料輸出控制部354,在狀態訊號STS為「1」、「0」任一者之情形,幾乎皆能直接使用。點光SP之掃描不會跳面而就反射面RP進行之第1狀態時,在副原點訊號ZP1產生後,在時間Ts後產生副原點訊號ZP2,接著在時間Ts後產生副原點訊號ZP3。是以,藉由計數器部CN1~CN3以DL1→DL2→DL3之順序反覆輸出序列資料DL1~DL3。通過副原點訊號ZP1~ZP3施加後在一定時間(ON時間Ton)中開啟之閘部GT1~GT3依序輸出之序列資料DL1~DL3,係作為描繪位元列資料Sdw輸入第1光源裝置14A’之驅動電路206a。同樣地,點光SP之掃描不會跳面而就反射面RP進行之第1狀態時,在副原點訊號ZP4產生後,在時間Ts後產生副原點訊號ZP5,接著在時間Ts後產生副原點訊號ZP6。是以,藉由計數器部CN4~CN6以DL4→DL5→DL6之順序反覆輸出序列資料DL4~DL6。通過副原點訊號ZP4~ZP6施加後在一定時間(ON時間Ton)中開啟之閘部GT4~GT6依序輸出之序列資料DL4~DL6,係作為描繪位元列資料Sdw輸入第2光源裝置14B’之驅動電路206a。Also, the drawing data
接著,簡單說明第1狀態時之序列資料DL1~DL6之偏移。序列資料DL1在列方向之偏移,在序列資料DL1送出結束後、接著進行掃描之掃描單元U2所對應之副原點訊號ZP2產生之時序進行。序列資料DL2在列方向之偏移,在序列資料DL2送出結束後、接著進行掃描之掃描單元U3所對應之副原點訊號ZP3產生之時序進行。序列資料DL3在列方向之偏移,在序列資料DL3送出結束後、接著進行掃描之掃描單元U1所對應之副原點訊號ZP1產生之時序進行。又,序列資料DL4在列方向之偏移,在序列資料DL4送出結束後、接著進行掃描之掃描單元U5所對應之副原點訊號ZP5產生之時序進行。序列資料DL5在列方向之偏移,在序列資料DL5送出結束後、接著進行掃描之掃描單元U6所對應之副原點訊號ZP6產生之時序進行。序列資料DL6在列方向之偏移,在序列資料DL6送出結束後、接著進行掃描之掃描單元U4所對應之副原點訊號ZP4產生之時序進行。此外,第2狀態時之描繪位元列資料Sdw之輸出控制與第4實施形態相同,因此省略說明。又,第1狀態時之描繪位元列資料Sdw之輸出控制與上述第1~第3實施形態之控制原理相同,僅輸出之序列資料DLn之順序不同。亦即,以DL1→DL3→DL5、DL2→DL4→DL6之順序分別輸出序列資料DLn或以DL1→DL2→DL3、DL4→DL5→DL6之順序分別輸出序列資料DLn之不同。Next, the deviation of the sequence data DL1 to DL6 in the first state will be briefly described. The sequence data DL1 is shifted in the column direction at the timing of generation of the secondary origin signal ZP2 corresponding to the scanning unit U2 that performs scanning after the sequence data DL1 is sent out. The sequence data DL2 is shifted in the column direction at the timing of generation of the secondary origin signal ZP3 corresponding to the scanning unit U3 that performs scanning after the sequence data DL2 is sent out. The sequence data DL3 is shifted in the column direction at the timing when the secondary origin signal ZP1 corresponding to the scanning unit U1 that performs scanning after the sequence data DL3 is sent is completed. In addition, the sequence data DL4 is shifted in the column direction at the timing when the secondary origin signal ZP5 corresponding to the scanning unit U5 that performs scanning after the sequence data DL4 is sent is completed. The offset of the sequence data DL5 in the column direction is performed at the timing of generation of the secondary origin signal ZP6 corresponding to the scanning unit U6 that performs scanning after the sequence data DL5 is sent out. The sequence data DL6 is shifted in the column direction at the timing of generation of the secondary origin signal ZP4 corresponding to the scanning unit U4 that performs scanning after the sequence data DL6 is sent out. In addition, the output control of the drawing bit sequence data Sdw in the second state is the same as in the fourth embodiment, so the description is omitted. In addition, the output control of the drawing bit sequence data Sdw in the first state is the same as the control principle of the above-mentioned first to third embodiments, only the sequence of the output sequence data DLn is different. That is, the sequence data DLn is respectively output in the order of DL1→DL3→DL5, DL2→DL4→DL6 or the sequence data DLn is respectively output in the order of DL1→DL2→DL3, DL4→DL5→DL6.
又,點光SP之掃描跳過一個反射面RP進行之第2狀態之情形,相較於不跳面而就反射面RP進行之第1狀態,各掃描單元Un(U1~U6)之點光SP之掃描開始間隔較長。例如,跳過一個反射面RP進行點光SP之掃描之情形,相較於不進行跳面之情形,各掃描單元Un(U1~U6)之點光SP之掃描開始間隔成為2倍。又,跳過二個反射面RP進行之情形,相較於不進行跳面之情形,點光SP之掃描開始間隔成為3倍。是以,在第1狀態與第2狀態,若使多面鏡PM之旋轉速度及基板FS之搬送速度相同,則在第1狀態與第2狀態,曝光結果成為不同。In addition, in the case where the scanning of the spot light SP skips over the second state of one reflective surface RP, the spot light of each scanning unit Un (U1 to U6) is compared to the first state of the reflective surface RP without skipping the surface The SP scanning interval is longer. For example, in the case of skipping a reflective surface RP to scan the spot light SP, compared to the case of not skipping the plane, the scanning start interval of the spot light SP of each scanning unit Un (U1 to U6) becomes twice. In addition, when the two reflection surfaces RP are skipped, the scanning start interval of the spot light SP becomes 3 times as compared with the case where no reflection surface is skipped. Therefore, in the first state and the second state, if the rotation speed of the polygon mirror PM and the transfer speed of the substrate FS are made the same, the exposure results will be different between the first state and the second state.
因此,曝光控制部356亦可具有在第1狀態與第2狀態下變更(修正)多面鏡PM之旋轉速度及基板FS之搬送速度之至少一者、以使在第1狀態與第2狀態之曝光結果成為相同之狀態之控制模式。例如,第1狀態時之點光SP之掃描開始間隔與第2狀態時之點光SP之掃描開始間隔為1:2之情形,曝光控制部356以第1狀態時之多面鏡PM之旋轉速度與第2狀態時之多面鏡PM之旋轉速度之比成為1:2之方式控制旋轉控制部350。具體而言,使第1狀態時之多面鏡PM之旋轉速度為2萬rpm,使第2狀態時之多面鏡PM之旋轉速度為4萬rpm。同時,將光源裝置14’(14A’, 14B’)之光束LB(LBa, LBb)之發光頻率FS設定成例如在第1狀態時為200MHz、在第2狀態時為400MHz。藉此,能使第1狀態時之副原點訊號ZPn之產生時序之間隔與第2狀態時之副原點訊號ZPn之產生時序之間隔大致相同。Therefore, the
又,例如,曝光控制部356亦可具有在第1狀態時之點光SP之掃描開始間隔與第2狀態時之點光SP之掃描開始間隔為1:2之情形、以第1狀態時之基板FS之搬送速度與第2狀態時之基板FS之搬送速度之比成為2:1之方式控制驅動輥R1~R3、旋轉筒DR之旋轉速度之控制模式。藉由上述修正多面鏡PM之旋轉速度或發光頻率Fs(時脈訊號LTC之頻率)之控制模式(掃描修正模式)、或修正基板FS之搬送速度之控制模式(搬送修正模式)之任一者,能使第1狀態時之在基板FS上之描繪線SLn(SL1~SL6)之X方向之間隔與第2狀態時之在基板FS上之描繪線SLn(SL1~SL6)之X方向之間隔成為相同間隔(例如,1.5μm)。再者,在第1狀態與第2狀態,儲存在描繪資料輸出控制部354內之記憶體部BM1~BM6之各個之圖案資料(位元資料),無須修正,可直接使用。Also, for example, the
又,亦可使用上述掃描修正模式與搬送修正模式之兩者,以在第1狀態下在基板FS上描繪之圖案與在第2狀態下在基板FS上描繪之圖案成為同等之方式進行修正。例如,在第1狀態(就多面鏡PM之各反射面RP進行光束掃描之情形)下,多面鏡PM之旋轉速度為2萬rpm、光源裝置14’(14A’, 14B’)之光束LB之發光頻率Fs為200MHz、基板FS之搬送速度為5mm/秒之情形,在第2狀態(多面鏡PM之每隔一個反射面RP進行光束掃描之情形)下,亦可將基板FS之搬送速度設定成非減速一半而是減速-25%之3.75mm/秒,將多面鏡PM之旋轉速度設定成1.5倍之3萬rpm,將光束LB之發光頻率Fs設定成1.5倍之300MHz。如上述,若組合掃描修正模式與搬送修正模式之兩者,則在第2狀態之情形,不需使基板FS之搬送速度降低至一半,可抑制產率極端降低。In addition, both of the scan correction mode and the transport correction mode described above may be used to correct the pattern drawn on the substrate FS in the first state to be the same as the pattern drawn on the substrate FS in the second state. For example, in the first state (in the case of performing beam scanning on each reflection surface RP of the polygon mirror PM), the rotation speed of the polygon mirror PM is 20,000 rpm, and the light beam LB of the light source device 14' (14A', 14B') When the luminous frequency Fs is 200 MHz and the substrate FS transfer speed is 5 mm/sec, the substrate FS transfer speed can also be set in the second state (in the case of beam scanning at every other reflective surface RP of the polygon mirror PM) It is not decelerated by half, but decelerated by -25% of 3.75mm/sec. The rotation speed of the polygon mirror PM is set to 1.5 times 30,000 rpm, and the light emitting frequency Fs of the light beam LB is set to 1.5 times 300MHz. As described above, if both the scan correction mode and the transfer correction mode are combined, in the second state, there is no need to reduce the transfer speed of the substrate FS to half, and it is possible to suppress an extremely low productivity.
此外,在第5實施形態,如在上述第4實施形態所說明,亦可任意地變更分配光束LBa, LBb之掃描單元Un之數。又,亦可任意地變更多面鏡PM之掃描效率。又,在第5實施形態,設多面鏡PM之掃描效率為1/3、掃描單元Un之數為六個,因此將六個選擇用光學元件AOMn(AOM1~AOM6)分成二個光學元件模組OM1, OM2,對應地將六個掃描單元Un(U1~U6)分成二個掃描模組。然而,多面鏡PM之掃描效率為1/M、掃描單元Un及選擇用光學元件AOMn之數為Q之情形,只要將Q個選擇用光學元件AOMn分成Q/M個光學元件模組OM1, OM2, …,將Q個掃描單元Un分成Q/M個掃描模組即可。此情形,較佳為,各光學元件模組OM1, OM2, …之各個所含之選擇用光學元件AOMn之數相等,又,Q/M個掃描模組之各個所含之掃描單元Un之數亦相等。此外,此Q/M較佳為正數。亦即,較佳為,Q為M之倍數。In addition, in the fifth embodiment, as described in the fourth embodiment described above, the number of scanning units Un that distribute the light beams LBa, LBb may be arbitrarily changed. In addition, the scanning efficiency of the mirror PM can be changed arbitrarily. Furthermore, in the fifth embodiment, the scanning efficiency of the polygon mirror PM is 1/3 and the number of scanning units Un is six, so the six selection optical elements AONn (AOM1~AOM6) are divided into two optical element modules OM1, OM2, correspondingly divide the six scanning units Un (U1~U6) into two scanning modules. However, when the scanning efficiency of the polygon mirror PM is 1/M, the number of the scanning unit Un and the selection optical element AOMn is Q, as long as the Q selection optical elements AOMn are divided into Q/M optical element modules OM1, OM2 , …, the Q scanning units Un can be divided into Q/M scanning modules. In this case, it is preferable that each of the optical element modules OM1, OM2, ... has the same number of selection optical elements AOMn, and the number of scanning units Un included in each of the Q/M scanning modules Also equal. In addition, this Q/M is preferably a positive number. That is, it is preferable that Q is a multiple of M.
例如,多面鏡PM之掃描效率為1/2、掃描單元Un及選擇用光學元件AOMn之數為六個之情形,只要將六個選擇用光學元件AOMn等分成三個光學元件模組OM1, OM2, OM3,將六個掃描單元Un等分成三個掃描模組即可。此外,第1狀態之情形,只要並列配置三個光學元件模組OM1, OM2, OM3,使來自三個光源裝置14’之光束LB(此情形,LBa, LBb,LBc)並行地射入三個光學元件模組OM1, OM2, OM3之各個即可,第2狀態之情形,只要直列配置三個光學元件模組OM1, OM2, OM3,使來自一個光源裝置14’之光束LB序列地通過射入三個光學元件模組OM1, OM2, OM3即可。For example, when the scanning efficiency of the polygon mirror PM is 1/2, the number of the scanning unit Un and the selection optical element AOMn is six, as long as the six selection optical elements AOMn are equally divided into three optical element modules OM1, OM2 , OM3, divide the six scanning units Un into three scanning modules. In addition, in the first state, as long as three optical element modules OM1, OM2, OM3 are arranged in parallel, the light beam LB (in this case, LBa, LBb, LBc) from the three light source devices 14' is incident on three in parallel Each of the optical element modules OM1, OM2, and OM3 is sufficient. In the second state, as long as three optical element modules OM1, OM2, and OM3 are arranged in line, the light beams LB from one light source device 14' are sequentially passed through Three optical element modules OM1, OM2, OM3 are sufficient.
如上述,在本第5實施形態,光束切換控制部352,以掃描單元Un之多面鏡PM進行之光束LBn(點光SP)之偏向(掃描)切換於就多面鏡PM之連續之反射面RP反覆之第1狀態(第1描繪模式)與就多面鏡PM之每隔至少一個反射面RP反覆之第2狀態(第2描繪模式)之任一者之方式,控制光束切換構件20A,依序進行複數個掃描單元Un之各個之點光SP之一維掃描。藉此,可獲得與上述第4實施形態相同之效果,且可切換跳面進行點光SP之掃描、或不跳面進行點光SP之掃描。As described above, in the fifth embodiment, the light beam switching
第1狀態之情形,在多面鏡PM之掃描效率(α/β)未滿1/2時,將對應掃描效率之倒數之數目之掃描單元Un群組化成一個掃描模組,使用該群組化之掃描模組之複數個,就各掃描模組,其內之一個掃描單元Un進行點光SP之一維掃描。藉此,能以點光SP同時掃描複數條描繪線SLn中與掃描模組之數相同數目之描繪線SLn。又,第2狀態之情形,由於以就多面鏡PM之每隔至少一個反射面RP進行光束掃描之方式進行控制,因此即使是較對應多面鏡PM之掃描效率(α/β)之倒數之數目多之複數個掃描單元Un,亦可有效地活用光束LB,同時該複數個掃描單元Un全部使點光SP沿著描繪線SLn掃描。In the case of the first state, when the scanning efficiency (α/β) of the polygon mirror PM is less than 1/2, the scanning unit Un corresponding to the reciprocal number of the scanning efficiency is grouped into a scanning module, and the grouping is used For a plurality of scanning modules, each scanning module and one of its scanning units Un perform one-dimensional scanning of spot light SP. With this, it is possible to simultaneously scan the plurality of drawing lines SLn among the plurality of drawing lines SLn with the number of scanning modules by the spot light SP. Furthermore, in the second state, since the beam scanning is performed on every at least one reflecting surface RP of the polygon mirror PM, the number of reciprocals of the scanning efficiency (α/β) of the polygon mirror PM is even greater The plural scanning units Un can also effectively utilize the light beam LB, and at the same time, the plural scanning units Un all scan the spot light SP along the drawing line SLn.
上述第1狀態之情形,來自光源裝置14A’, 14B’之各個之光束LBa, LBb並行地射入群組化之二個掃描模組,因此光束切換構件20A內之選擇用光學元件AOM1~AOM6之各個藉由光束切換控制部352以群組化之掃描模組單位以分時方式射入光束LB1~LB6對應之掃描單元U1~U6之方式切換ON/OFF狀態。In the case of the first state described above, the light beams LBa, LBb from the
設在光束切換構件20A之配置切換構件SWE切換第1配置狀態與第2配置狀態,該第1配置狀態,以將來自第1光源裝置14A’之光束LBa作為光束LB1~LB3分配至六個掃描單元U1~U6中三個掃描單元U1~U3之各個、且將來自第2光源裝置14B’之光束LBb作為光束LB4~LB6分配至其餘三個掃描單元U4~U6之各個之方式,三個選擇用光學元件AOM1~AOM3沿著光束LBa之光路直列連接且選擇用光學元件AOM4~AOM6沿著光束LBb之光路直列連接,該第2配置狀態,以將來自一個第1光源裝置14A’之光束LBa作為光束LB1~LB6分配至六個掃描單元U1~U6之各個之方式,六個選擇用光學元件AOM1~AOM6沿著光束LBa之光路直列連接。The arrangement switching member SWE provided in the
藉此,第1狀態之情形,藉由配置切換構件SWE設定第1配置狀態,各掃描單元U1~U6之各個可就多面鏡PM之連續之反射面RP反覆點光SP之掃描,且六個掃描單元U1~U6中二個掃描單元可幾乎同時進行點光SP之掃描。又,第2狀態之情形,藉由配置切換構件SWE設定第2配置狀態,雖為就多面鏡PM之每隔至少一個反射面RP之光束掃描,但能以六個掃描單元U1~U6全部反覆點光SP之掃描。In this way, in the case of the first state, the first configuration state is set by the configuration switching member SWE, each of the scanning units U1 to U6 can repeatedly scan the spot light SP on the continuous reflection surface RP of the polygon mirror PM, and six The two scanning units of the scanning units U1 to U6 can scan the spot light SP almost simultaneously. Moreover, in the case of the second state, the second arrangement state is set by the arrangement switching member SWE. Although it scans the beam of every at least one reflection surface RP of the polygon mirror PM, it can be repeated with all six scanning units U1 to U6 Spot light SP scanning.
是以,根據本第5實施形態,在描繪裝置之初始設置時之安裝,欲使用一個光源裝置14A’以成為第2配置狀態之方式設定配置切換構件SWE、之後提升基板FS之搬送速度之情形,只要增設第2光源裝置14B’, 以成為第1配置狀態之方式設定配置切換構件SWE即可,在硬體上,能以光源裝置之增設、配置切換構件SWE之切換等簡單操作使描繪裝置升級。Therefore, according to the fifth embodiment, when installing the initial setting of the drawing device, one
此外,在上述各實施形態,使用相對於進行多面鏡PM之光束LBn之偏向之反射面RP位於多面鏡PM之旋轉方向之前一個反射面RP進行原點訊號SZn之檢測,但亦可使用進行光束LBn之偏向之反射面RP本身進行原點訊號SZn之檢測。此情形,不須使原點訊號SZn或從原點訊號SZn求出之原點訊號SZn’延遲時間Tpx,因此只要使原點訊號SZn或原點訊號SZn’為副原點訊號ZPn即可。In addition, in the above embodiments, a reflection surface RP that is located before the rotation direction of the polygon mirror PM relative to the deflecting reflection surface RP of the light beam LBn of the polygon mirror PM is used to detect the origin signal SZn, but it is also possible to use a light beam The reflective surface RP of the LBn bias detects the origin signal SZn. In this case, it is not necessary to make the origin signal SZn or the origin signal SZn' obtained from the origin signal SZn delay time Tpx, so it is only necessary to make the origin signal SZn or the origin signal SZn' as the secondary origin signal ZPn.
又,在上述第4及第5實施形態,使用描繪位元列資料Sdw切換作為光源裝置14’(14A’, 14B’)之描繪用光調變器之電氣光學元件206,但亦可如第2實施形態般,作為描繪用光調變器使用描繪用光學元件AOM。此描繪用光學元件AOM為聲光調變元件(AOM:Acousto-Optic Modulator)。亦即,在上述第4實施形態,亦可在光源裝置14’與初段之選擇用光學元件AOM1之間配置描繪用光學元件AOM,使透射過描繪用光學元件AOM之來自光源裝置14’之光束LB射入選擇用光學元件AOM1。此情形,描繪用光學元件AOM依據描繪位元列資料Sdw切換。即使是此情形,亦可獲得與上述第4實施形態相同之效果。In the fourth and fifth embodiments described above, the drawing bit sequence data Sdw is used to switch the electro-
又,在上述第5實施形態,在第1光源裝置14A’與第1光學元件模組OM1之初段之選擇用光學元件AOM1之間、在第2光源裝置14B’與第2光學元件模組OM2之初段之選擇用光學元件AOM4之間分別配置描繪用光學元件AOM(AOMa, AOMb)。亦即,使透射過描繪用光學元件AOMa之來自光源裝置14A’之光束LBa射入選擇用光學元件AOM1,使透射過描繪用光學元件AOMb之來自光源裝置14B’之光束LBb射入選擇用光學元件AOM4。此情形,第1狀態時,描繪用光學元件AOMa依據以序列資料DL1~DL3構成之描繪位元列資料Sdw切換,描繪用光學元件AOMb依據以序列資料DL4~DL6構成之描繪位元列資料Sdw切換。又,第2狀態時,僅描繪用光學元件AOMa依據以序列資料DL1~DL6構成之描繪位元列資料Sdw切換。Moreover, in the above-described fifth embodiment, between the first
又,亦可如第1實施形態般,就掃描單元Un設置作為描繪用光調變器之描繪用光學元件AOM。此情形,描繪用光學元件AOM亦可設在各掃描單元Un之反射鏡M20(參照圖28)之前側。此各掃描單元Un(U1~U6)之描繪用光學元件AOM依據各序列資料DLn(DL1~DL6)切換。例如,掃描單元U3之描繪用光學元件AOM依據序列資料DL3切換。In addition, as in the first embodiment, the scanning unit Un may be provided with a drawing optical element AOM as a drawing light modulator. In this case, the optical element AOM for drawing may be provided in front of the mirror M20 (see FIG. 28) of each scanning unit Un. The optical element AOM for drawing of each scanning unit Un (U1~U6) is switched according to the sequence data DLn (DL1~DL6). For example, the optical element AOM for drawing of the scanning unit U3 is switched according to the sequence data DL3.
(第6實施形態)
圖41係顯示第6實施形態之光束切換構件(光束配送單元)20B之構成,此處,設從一個光源裝置14’射出後射入光束切換構件20B之光束LBw(LB)成為圓偏光之平行光束。在光束切換構件20B設有六個選擇用光學元件AOM1~AOM6、二個吸收體TR1, TR2、六個透鏡系CG1~CG6、反射鏡M30, M31, M32、聚光透鏡CG0、及偏光分束器BS1與二個描繪用光學元件(聲光調變元件)AOMa, AOMb。此外,針對與上述第4實施形態或上述第5實施形態相同之構成,賦予相同之參照符號。
(Sixth embodiment)
FIG. 41 shows the configuration of the beam switching member (beam delivery unit) 20B of the sixth embodiment. Here, it is assumed that the light beam LBw (LB) that enters the
射入光束切換構件20B之光束LBw通過聚光透鏡CG0後藉由偏光分束器BS1分離成直線P偏光之光束LBp與直線S偏光之光束LBs。被偏光分束器BS1反射之S偏光之光束LBs射入描繪用光學元件AOMa。射入描繪用光學元件AOMa之光束LBs,藉由聚光透鏡CG0之聚光作用,收斂成在描繪用光學元件AOMa內成為光束腰寬。對描繪用光學元件AOMa透過驅動器電路DRVn施加圖19所示之描繪位元列資料Sdw(DLn)。此描繪位元列資料Sdw,此處係奇數號掃描單元U1, U3, U5之各個所對應之序列資料DL1, DL3, DL5合成後者。是以,描繪用光學元件AOMa,在描繪位元列資料Sdw(DLn)為「1」時,成為ON狀態,使射入之光束LBs之1次繞射光作為偏向之描繪光束(強度調變之光束)朝向反射鏡M31射出。被反射鏡M31反射之描繪光束通過透鏡系CG1射入選擇用光學元件AOM1。又,在描繪位元列資料Sdw(DLn)為「0」時,從描繪用光學元件AOMa射出之0次光(LBs)被反射鏡M31反射,但以不會射入後續之透鏡系CG1之角度行進。此外,透鏡系CG1以選擇用光學元件AOM1之繞射部分將從描繪用光學元件AOMa散射射出之描繪光束聚光成為光束腰寬。The light beam LBw incident on the light
透射過選擇用光學元件AOM1之描繪光束,透過與透鏡系CG1相同之透鏡系CG3射入選擇用光學元件AOM3,透射過選擇用光學元件AOM3之描繪光束,透過與透鏡系CG1相同之透鏡系CG5射入選擇用光學元件AOM5。圖41中係顯示下述狀態,即三個選擇用光學元件AOM1, AOM3, AOM5沿著光束光路直列配置,其中僅選擇用光學元件AOM3成為ON狀態,被描繪用光學元件AOMa強度調變之描繪光束,作為光束LB3射入對應之掃描單元U3。此外,透鏡系CG1, CG3, CG5相當於圖26或圖36中之一片準直鏡CL與一片聚光透鏡CD組合者。The drawing beam transmitted through the selection optical element AOM1 passes through the same lens system CG3 as the lens system CG1 and enters the selection optical element AOM3, and transmits the drawing beam passing through the selection optical element AOM3, and passes through the same lens system CG5 as the lens system CG1 Injection selection optical element AOM5. Fig. 41 shows the state in which three selection optical elements AOM1, AOM3, and AOM5 are arranged in line along the optical path of the beam, in which only the selection optical element AOM3 is turned ON, and the intensity of the optical element AOMa for drawing is modulated. The light beam enters the corresponding scanning unit U3 as the light beam LB3. In addition, the lens systems CG1, CG3, and CG5 correspond to a combination of one collimator lens CL and one condenser lens CD in FIG. 26 or 36.
另一方面,透射過偏光分束器BS1之P偏光之光束LBp被反射鏡M30反射後射入描繪用光學元件AOMb。射入描繪用光學元件AOMb之光束LBp,藉由聚光透鏡CG0之聚光作用,收斂成在描繪用光學元件AOMb內成為光束腰寬。對描繪用光學元件AOMb透過驅動器電路DRVn施加圖19所示之描繪位元列資料Sdw(DLn)。描繪位元列資料Sdw,係偶數號掃描單元U2, U4, U6之各個所對應之序列資料DL2, DL4, DL6合成後者。是以,描繪用光學元件AOMb,在描繪位元列資料Sdw(DLn)為「1」時,成為ON狀態,使射入之光束LBp之1次繞射光作為偏向之描繪光束(強度調變之光束)朝向反射鏡M32射出。被反射鏡M32反射之描繪光束通過與透鏡系CG1相同之透鏡系CG2射入選擇用光學元件AOM2。又,在描繪位元列資料Sdw(DLn)為「0」時,從描繪用光學元件AOMb射出之0次光(LBp)被反射鏡M32反射,但以不會射入後續之透鏡系CG2之角度行進。此外,透鏡系CG2以選擇用光學元件AOM2之繞射部分將從描繪用光學元件AOMb散射射出之描繪光束聚光成為光束腰寬。On the other hand, the P-polarized light beam LBp transmitted through the polarizing beam splitter BS1 is reflected by the mirror M30 and enters the drawing optical element AOMb. The light beam LBp incident on the optical element for drawing AOMb is converged to become the waist width of the optical beam in the optical element for drawing AOMb by the condensing action of the condenser lens CG0. The drawing bit row data Sdw(DLn) shown in FIG. 19 is applied to the drawing optical element AOMb through the driver circuit DRVn. Depicting the bit row data Sdw is the sequence data DL2, DL4, DL6 corresponding to each of the even-numbered scanning units U2, U4, U6 to synthesize the latter. Therefore, the drawing optical element AOMb becomes ON when the drawing bit row data Sdw(DLn) is "1", and the primary diffracted light of the incident light beam LBp is used as a deflected drawing light beam (intensity modulation) The light beam) is emitted toward the mirror M32. The drawing beam reflected by the mirror M32 enters the selection optical element AOM2 through the same lens system CG2 as the lens system CG1. In addition, when the drawing bit row data Sdw (DLn) is "0", the zero-order light (LBp) emitted from the drawing optical element AOMb is reflected by the mirror M32, but it does not enter the subsequent lens system CG2 Travel at an angle. In addition, the diffractive part of the lens system CG2 in the selective optical element AOM2 condenses the drawing beam scattered from the drawing optical element AOMb into a beam waist width.
透射過選擇用光學元件AOM2之描繪光束,透過與透鏡系CG1相同之透鏡系CG4射入選擇用光學元件AOM4,透射過選擇用光學元件AOM4之描繪光束,透過與透鏡系CG1相同之透鏡系CG6射入選擇用光學元件AOM6。圖41中係顯示下述狀態,即三個選擇用光學元件AOM2, AOM4, AOM6沿著光束光路直列配置,其中僅選擇用光學元件AOM2成為ON狀態,被描繪用光學元件AOMb強度調變之描繪光束,作為光束LB2射入對應之掃描單元U2。此外,透鏡系CG2, CG4, CG6相當於圖26或圖36中之一片準直鏡CL與一片聚光透鏡CD組合者。The drawing beam transmitted through the selection optical element AOM2, enters the selection optical element AOM4 through the same lens system CG4 as the lens system CG1, and transmits the drawing beam transmitted through the selection optical element AOM4, and passes through the same lens system CG6 as the lens system CG1 Injection selection optical element AOM6. Fig. 41 shows the state in which the three selection optical elements AOM2, AOM4, and AOM6 are arranged in line along the beam optical path, in which only the selection optical element AOM2 is turned ON, and the intensity of the optical element AOMb is drawn. The light beam enters the corresponding scanning unit U2 as the light beam LB2. In addition, the lens systems CG2, CG4, and CG6 are equivalent to the combination of one collimator lens CL and one condenser lens CD in FIG. 26 or 36.
若使用上述圖41之光束切換構件(光束配送單元)20B,則能以偏光分束器BS1將來自一個光源裝置14’之光束LBw分割成二,使從其中一方之光束LBs藉由描繪用光學元件AOMa產生之描繪光束(LB1, LB3, LB5)依序射入奇數號掃描單元U1, U3, U5之任一個,使從以偏光分束器BS1分割之另一方之光束LBp藉由描繪用光學元件AOMb產生之描繪光束(LB2, LB4, LB6)依序射入偶數號掃描單元U2, U4, U6之任一個。If the beam switching member (beam distribution unit) 20B of FIG. 41 described above is used, the light beam LBw from one light source device 14' can be divided into two by the polarization beam splitter BS1, and the light beam LBs from one of them can be drawn by the optical The drawing beams (LB1, LB3, LB5) generated by the element AOMa are sequentially incident on any one of the odd-numbered scanning units U1, U3, and U5, so that the beam LBp from the other side split by the polarizing beam splitter BS1 is used for drawing optically The drawing beams (LB2, LB4, LB6) generated by the element AOMb are sequentially incident on any of the even-numbered scanning units U2, U4, U6.
在此第6實施形態,以偏光分束器BS1將來自光源裝置14’之光束LBw分割成二後,以描繪用光學元件AOMa, AOMb進行以圖案資料為依據之光束LB之強度調變,因此若設六個掃描單元U1~U6之各個之點光SP之強度在偏光分束器BS1之衰減為-50%、在描繪用光學元件AOMa, AOMb與各選擇用光學元件AOMn之衰減為-20%、在各掃描單元U1~U6內之衰減為-30%,則成為原本之光束LBw之強度(100%)之約22.4%。然而,在六個掃描單元U1~U6之各個之多面鏡PM之掃描效率為1/3以下,使用來自一個光源裝置14’之光束LBw之情形,不會跳過多面鏡PM之一個反射面RP進行光束掃描,能以六條描繪線SLn之各個進行點光SP之掃描之圖案描繪。In the sixth embodiment, the light beam LBw from the light source device 14' is divided into two by the polarizing beam splitter BS1, and the intensity of the light beam LB based on the pattern data is modulated by the drawing optical elements AOMa, AOMb. If the intensity of the spot light SP of each of the six scanning units U1 to U6 is set at -50% at the polarization beam splitter BS1, the attenuation at the optical elements for drawing AOMa, AOMb and AOMn for each selection is -20 %, the attenuation in each scanning unit U1~U6 is -30%, then it becomes about 22.4% of the intensity (100%) of the original light beam LBw. However, the scanning efficiency of the polygon mirror PM of each of the six scanning units U1 to U6 is 1/3 or less. In the case of using the light beam LBw from one light source device 14', one reflection surface RP of the polygon mirror PM will not be skipped By performing beam scanning, the pattern of scanning the spot light SP with each of the six drawing lines SLn can be drawn.
(變形例1) 如第6實施形態般,在射入奇數號選擇用光學元件AOM1, AOM3, AOM5之光束LBs與射入偶數號選擇用光學元件AOM2, AOM4, AOM6之光束LBp之偏光方向正交之情形,奇數號選擇用光學元件AOMn與偶數號選擇用光學元件AOMn必須配置成繞光束入射軸相對地旋轉90度。圖42係顯示例如使奇數號選擇用光學元件AOM1, AOM3, AOM5中選擇用光學元件AOM3相對於偶數號選擇用光學元件AOMn旋轉90度配置之情形之構成。選擇用光學元件AOM3使通過透鏡系CG3之S偏光之描繪光束射入,因此繞射效率高之方向成為與XY平面平行之Y方向。亦即,以在選擇用光學元件AOM3內產生之繞射光柵之週期方向成為Y方向之方式,使選擇用光學元件AOM3旋轉90度配置。 (Modification 1) As in the sixth embodiment, when the polarizing directions of the light beams LBs entering the odd-number selection optical elements AOM1, AOM3, AOM5 and the even-number selection optical elements AOM2, AOM4, AOM6 are orthogonal, the odd number The optical element AONn for number selection and the optical element AONn for even number selection must be arranged to rotate relative to each other about the beam incident axis by 90 degrees. FIG. 42 shows, for example, a configuration in which the selection optical elements AOM3 among the odd number selection optical elements AOM1, AOM3, and AOM5 are rotated by 90 degrees with respect to the even number selection optical elements AOMn. The optical element AOM3 for selection causes the S-polarized drawing beam passing through the lens system CG3 to enter, so the direction of high diffraction efficiency becomes the Y direction parallel to the XY plane. That is, the selection optical element AOM3 is arranged to rotate 90 degrees so that the periodic direction of the diffraction grating generated in the selection optical element AOM3 becomes the Y direction.
藉由上述選擇用光學元件AOM3之配置,在選擇用光學元件AOM3為ON狀態時偏向射出之光束LB3,相對於0次光之行進方向往Y方向傾斜行進。因此,設置以從0次光之光路使光束LB3分離、光束LB3在Z方向通過支承構件IUB之開口部TH3之方式使來自選擇用光學元件AOM3之光束LB3在XY平面內反射之反射鏡IM3a、及以被反射鏡IM3a反射之光束LB3通過開口部TH3之方式往-Z方向反射之反射鏡IM3b。關於其他奇數號選擇用光學元件AOM1, AOM5之各個,亦同樣地,設置反射鏡IM1a與IM1b之組、反射鏡IM5a與IM5b之組。再者,在圖41之構成,由於射入描繪用光學元件AOMa, AOMb之光束LBs, LBp之偏光方向正交,因此描繪用光學元件AOMa, AOMb係以繞光束入射軸相對地旋轉90度之關係配置。With the above arrangement of the selection optical element AOM3, when the selection optical element AOM3 is in the ON state, the deflecting light beam LB3 travels obliquely to the Y direction with respect to the traveling direction of the zero-order light. Therefore, a mirror IM3a is provided to reflect the light beam LB3 from the selection optical element AOM3 in the XY plane so that the light beam LB3 is separated from the optical path of the 0th order light beam and the light beam LB3 passes through the opening TH3 of the support member IUB in the Z direction. And the reflecting mirror IM3b reflected in the -Z direction so that the light beam LB3 reflected by the reflecting mirror IM3a passes through the opening TH3. Regarding each of the odd-number selection optical elements AOM1 and AOM5, the group of mirrors IM1a and IM1b and the group of mirrors IM5a and IM5b are also provided in the same manner. Furthermore, in the configuration of FIG. 41, since the polarization directions of the light beams LBs and LBp incident on the drawing optical elements AOMa and AOMb are orthogonal, the drawing optical elements AOMa and AOMb are relatively rotated by 90 degrees about the beam incident axis. Relationship configuration.
然而,使圖41中之偏光分束器BS1為振幅分割之分束器或半反射鏡之情形,若使光束LBw之偏光方向僅為一方向(例如P偏光),則無需將描繪用光學元件AOMa, AOMb之一方、奇數號選擇用光學元件AOMn與偶數號選擇用光學元件AOMn之一方如圖42般配置成相對地旋轉90度。However, in the case where the polarization beam splitter BS1 in FIG. 41 is an amplitude-splitting beam splitter or a half mirror, if the polarization direction of the light beam LBw is only one direction (for example, P polarization), there is no need to draw the optical element for drawing One side of AOMa, AOMb, one of odd number selection optical element AOMn and one of even number selection optical element AONn are arranged to rotate relatively 90 degrees as shown in FIG. 42.
(變形例2) 在第6實施形態,對應六個選擇用光學元件AOM1~AOM6之各個之掃描單元U1~U6全部就多面鏡PM之所有反射面RP進行沿著描繪線SL1~SL6之各個之點光SP之掃描。因此,以依序通過奇數號選擇用光學元件AOM1, AOM3, AOM5而來之光束(以描繪用光學元件AOMa調變之光束)射入之方式,在圖41之選擇用光學元件AOM5與吸收體TR2之間進一步直列設置三個選擇用光學元件AOM7, AOM9, AOM11,以依序通過偶數號選擇用光學元件AOM2, AOM4, AOM6而來之光束(以描繪用光學元件AOMb調變之光束)射入之方式,在選擇用光學元件AOM6與吸收體TR1之間進一步直列設置三個選擇用光學元件AOM8, AOM10, AOM12。此外,增設以選擇用光學元件AOM7~AOM12之各個偏向(切換)之光束LB7~LB12導入之六個掃描單元U7~U12,將合計12個掃描單元U1~U12配置在基板FS之寬方向(Y方向)。藉此,可進行12條描繪線SL1~SL12之接續描繪曝光,可將Y方向之最大曝光寬擴大成2倍。 (Modification 2) In the sixth embodiment, the scanning units U1 to U6 corresponding to each of the six selection optical elements AOM1 to AOM6 scan the spot light SP along the drawing lines SL1 to SL6 on all the reflection surfaces RP of the polygon mirror PM . Therefore, in order to enter the light beams through the odd-numbered selection optical elements AOM1, AOM3, AOM5 in order (the beam modulated by the optical element AOMa for drawing), the selective optical element AOM5 and the absorber in FIG. 41 Three selection optical elements AOM7, AOM9, AOM11 are further arranged in-line between TR2, in order to pass the light beams from the even-numbered selection optical elements AOM2, AOM4, AOM6 (to describe the beam modulated by the optical element AOMb) In this way, three selection optical elements AOM8, AOM10, and AOM12 are further arranged in-line between the selection optical element AOM6 and the absorber TR1. In addition, six scanning units U7 to U12 introduced with the beams LB7 to LB12 for each deflection (switching) of the optical elements AOM7 to AOM12 are added, and a total of 12 scanning units U1 to U12 are arranged in the width direction of the substrate FS (Y direction). In this way, successive drawing exposures of 12 drawing lines SL1 to SL12 can be performed, and the maximum exposure width in the Y direction can be doubled.
此情形,掃描單元U1~U12之各個之多面鏡PM之掃描效率為1/3以下之情形,群組化為第1描繪模組之奇數號掃描單元U1, U3, U5, U7, U9, U11及群組化為第2描繪模組之偶數號掃描單元U2, U4, U6, U8, U10, U12皆使光束LB每隔多面鏡PM之一個反射面RP掃描。如此,即使在基板FS之Y方向之寬變大之情形,僅追加掃描單元U7~U12、選擇用光學元件AOM7~AOM12等,即可對較大曝光區域W(圖5、圖25)描繪圖案。如上述,增設六個掃描單元U7~U12與選擇用光學元件AOM7~AOM12成為12個掃描單元U1~U12之構成,同樣地亦可適用於使用上述第5實施形態(圖36~圖38)說明之二個光源裝置14A’, 14B’之情形。In this case, when the scanning efficiency of each polygon mirror PM of the scanning units U1 to U12 is 1/3 or less, the odd-numbered scanning units U1, U3, U5, U7, U9, U11 of the first drawing module are grouped together And the even-numbered scanning units U2, U4, U6, U8, U10, U12 grouped into the second drawing module scan the light beam LB every one reflecting surface RP of the polygon mirror PM. In this way, even in the case where the width of the substrate FS in the Y direction becomes larger, by simply adding the scanning units U7 to U12, the selection optical elements AOM7 to AOM12, etc., a pattern can be drawn on the large exposure area W (FIGS. 5 and 25) . As described above, the addition of six scanning units U7 to U12 and the selection optical elements AOM7 to AOM12 constitutes the structure of twelve scanning units U1 to U12, and the same can be applied to the description using the above fifth embodiment (FIGS. 36 to 38) The case of two
(變形例3)
圖43係顯示變形例3之基板FS之搬送形態與掃描單元Un(描繪線SLn)之配置關係,此處,如變形例2般,設置12個掃描單元U1~U12,以能使各掃描單元Un之描繪線SL1~SL12在Y方向接續描繪曝光之方式,配置在旋轉筒DR上。又,設圖23所示之基板搬送機構12之旋轉筒DR或各種輥R1~R3, RT1, RT2等之旋轉軸方向(Y方向)之長度為Hd、12個掃描單元Un之接續描繪可曝光之Y方向之最大描繪寬為Sh(Sh<Hd)、可曝光之基板FS之最大支承寬為Td。變形例3中12條描繪線SL1~SL12之各個所對應之12個掃描單元U1~U12之各個,從如圖41(第6實施形態)般之以分束器或半反射鏡將來自一個光源裝置14’之光束LBw分割為二之方式之光束切換構件(光束配送單元)20B、或者如圖38(第5實施形態)般之使用來自二個光源裝置14A’14B’之各個之光束LBa, LBb之方式之光束切換構件(光束配送單元)20A,以分時方式使對應之12個光束LB1~LB12射入。是以,例如各描繪線SL1~SL12之Y方向之長度為50mm之情形,最大描繪寬成為600mm,作為一例,能使最大支承寬Td之基板FS0之寬成為650mm,使旋轉筒DR之長度Hd成為700mm程度。
(Modification 3)
FIG. 43 shows the arrangement relationship between the transport form of the substrate FS and the scanning unit Un (drawing line SLn) in Modification 3. Here, as in
藉由圖43之描繪裝置進行與最大支承寬Td同寬之基板FS0之曝光之情形,除了上述圖24、圖25所示之四個對準顯微鏡AM1~AM4(觀察區域Vw1~Vw4)之外,在Y方向增設三個對準顯微鏡AM5~AM7(觀察區域Vw5~Vw7)。此情形,位於基板FS0之寬方向兩側之對準顯微鏡AM1(觀察區域Vw1)與對準顯微鏡AM7(觀察區域Vw7)檢測在基板FS0之兩側於X方向以一定間距形成之對準標記。又,對準顯微鏡AM4(觀察區域Vw4)係配置成位於最大支承寬Td之大致中央。Except for the four alignment microscopes AM1~AM4 (observation area Vw1~Vw4) shown in Figs. 24 and 25, the exposure device FS0 of the same width as the maximum support width Td is exposed by the drawing device of Fig. 43 , Add three alignment microscopes AM5~AM7 (observation area Vw5~Vw7) in Y direction. In this case, the alignment microscope AM1 (observation area Vw1) and the alignment microscope AM7 (observation area Vw7) located on both sides of the substrate FS0 in the width direction detect alignment marks formed at a certain pitch in the X direction on both sides of the substrate FS0. In addition, the alignment microscope AM4 (observation area Vw4) is arranged substantially in the center of the maximum support width Td.
又,可藉由上述各實施形態說明之6個掃描單元U1~U6之各個之描繪線SL1~SL6在曝光區域W描繪圖案之基板FS1之情形,其寬Td1為旋轉筒DR之最大支承寬Td之一半程度,因此基板FS1例如往旋轉筒DR之外周面之-Y方向側接近搬送。此時,基板FS1上之對準標記MK1~MK4(圖25)之各個可藉由四個對準顯微鏡AM1~AM4之各觀察區域Vw1~Vw4檢測。此外,基板FS1之曝光之情形,只要使用6個掃描單元U1~U6即可,因此掃描單元U1~U6之各個在就多面鏡PM之連續之反射面RP之光束掃描或每隔多面鏡PM之一個反射面RP之光束掃描之任一模式,皆可進行沿著各描繪線SL1~SL6之點掃描。In addition, the drawing lines SL1 to SL6 of each of the six scanning units U1 to U6 described in the above embodiments can draw the patterned substrate FS1 in the exposure area W, and the width Td1 is the maximum support width Td of the rotating drum DR The substrate FS1 is approached and transported toward the −Y direction side of the outer peripheral surface of the rotating drum DR, for example, to a certain degree. At this time, each of the alignment marks MK1 to MK4 (FIG. 25) on the substrate FS1 can be detected by each observation area Vw1 to Vw4 of the four alignment microscopes AM1 to AM4. In addition, for the exposure of the substrate FS1, as long as six scanning units U1 to U6 are used, each of the scanning units U1 to U6 scans the beam of the continuous reflection surface RP of the polygon mirror PM or every other polygon PM Any mode of beam scanning of a reflective surface RP can perform point scanning along each drawing line SL1~SL6.
例如,如第5實施形態般,設定成皆使用來自二個光源裝置14A’, 14B’之各個之光束LBa, LBb之情形,以來自光源裝置14A’之光束LBa直列透射過奇數號掃描單元U1, U3, U5, U7, U9, U11之各個所對應之選擇用光學元件AOM1, AOM3, AOM5, AOM7, AOM9, AOM11之方式,在光束切換構件20A內群組化,以來自光源裝置14A’之光束LBa直列透射過偶數號掃描單元U2, U4, U6, U8, U10, U12之各個所對應之選擇用光學元件AOM2, AOM4, AOM6, AOM8, AOM10, AOM12之方式,在光束切換構件20A內群組化。此外,在基板FS1之曝光時,以僅根據就多面鏡PM之連續之反射面RP輸出之三個原點訊號SZ1, SZ3, SZ5,以奇數號掃描單元U1, U3, U5之順序反覆就多面鏡PM之連續之反射面RP之光束掃描之方式進行控制,以僅根據就多面鏡PM之連續之反射面RP輸出之三個原點訊號SZ2, SZ4, SZ6,以偶數號掃描單元U2, U4, U6之順序反覆就多面鏡PM之連續之反射面RP之光束掃描之方式進行控制。For example, as in the fifth embodiment, when the light beams LBa and LBb from each of the two
再者,對小於最大支承寬Td且大於基板FS1之寬Td1之寬Td2之基板FS進行曝光之情形,使基板FS2配合旋轉筒DR之最大支承寬Td之中央部分進行搬送。此時,基板FS2上之曝光區域W係藉由在Y方向連續之八個掃描單元U3~U10之各個之描繪線SL3~SL10描繪。此情形,以來自光源裝置14A’之光束LBa(強度調變之光束)射入之奇數號之四個選擇用光學元件AOM3, AOM5, AOM7, AOM9以分時方式依序產生光束LB3, LB5, LB7, LB9之任一個、來自光源裝置14B’之光束LBb(強度調變之光束)射入之偶數號之四個選擇用光學元件AOM4, AOM6, AOM8, AOM10以分時方式依序產生光束LB4, LB6, LB8, LB10之任一個之方式進行控制。是以,至少八個掃描單元U3~U10之各個設定在每隔多面鏡PM之一個反射面RP之光束掃描之模式。Furthermore, in the case of exposing the substrate FS smaller than the maximum support width Td and larger than the width Td1 of the substrate FS1 and the width Td2, the substrate FS2 is transported in cooperation with the central portion of the maximum support width Td of the rotating drum DR. At this time, the exposure area W on the substrate FS2 is drawn by the drawing lines SL3 to SL10 of each of the eight scanning units U3 to U10 continuous in the Y direction. In this case, the four selective optical elements AOM3, AOM5, AOM7, and AOM9 of the odd number incident with the light beam LBa (intensity-modulated light beam) from the
接著,在基板FS2之曝光時,以僅根據每隔奇數號掃描單元U3, U5, U7, U9之各個之多面鏡PM之一個反射面RP輸出之四個副原點訊號ZP3, ZP5, ZP7, ZP9,以奇數號掃描單元U3, U5, U7, U9之順序就多面鏡PM之每隔一個反射面RP反覆光束掃描之方式進行控制,以僅根據每隔偶數號掃描單元U4, U6, U8, U10之各個之多面鏡PM之一個反射面RP輸出之四個副原點訊號ZP4, ZP6, ZP8, ZP10,以偶數號掃描單元U4, U6, U8, U10之順序反覆每隔多面鏡PM之一個反射面RP之光束掃描之方式進行控制。此外,圖43中,形成在基板FS2上之寬方向兩側之對準標記(相當於圖25中之對準標記MK1, MK4)係以在對準顯微鏡AM2, AM6之各觀察區域Vw2, Vw6檢測之關係配置,但依據曝光區域W之Y方向之尺寸,亦會有不需以上述關係配置之情形。此情形,只要將七個對準顯微鏡AM1~AM7中幾個設成可往Y方向移動,可調整觀察區域Vw1~Vw7之Y方向之位置間隔即可。Then, during the exposure of the substrate FS2, the four sub-origin signals ZP3, ZP5, ZP7 are output based on only one reflecting surface RP of each polygon mirror PM of each odd-numbered scanning unit U3, U5, U7, U9, ZP9, in the order of odd-numbered scanning units U3, U5, U7, U9, is controlled by the repeated beam scanning of every other reflective surface RP of the polygon mirror PM, only based on every even-numbered scanning units U4, U6, U8, The four sub-origin signals ZP4, ZP6, ZP8, and ZP10 output from one reflecting surface RP of each polygon mirror PM of U10, and the scanning units U4, U6, U8, U10 of the even number are repeated one by one every polygon mirror PM. The way of scanning the light beam of the reflecting surface RP is controlled. In addition, in FIG. 43, the alignment marks (equivalent to the alignment marks MK1 and MK4 in FIG. 25) formed on both sides of the substrate FS2 in the width direction are aligned in the observation areas Vw2 and Vw6 of the alignment microscopes AM2 and AM6. The relationship of detection is configured, but depending on the size of the exposure area W in the Y direction, there may be cases where it is not necessary to configure the relationship. In this case, as long as several of the seven alignment microscopes AM1 to AM7 are set to be movable in the Y direction, the position interval of the observation areas Vw1 to Vw7 in the Y direction can be adjusted.
根據以上變形例3,可依據待曝光基板FS之寬或曝光區域W之Y方向尺寸,進行僅使用必要之掃描單元Un之高效率曝光。又,如圖43所示,12個掃描單元U1~U12之各個之多面鏡PM之掃描效率為1/3以下之情形,例如,若每隔各多面鏡PM之三個反射面RP進行光束掃描,則即使是來自一個光源裝置14’之光束,亦可在最大描繪寬Sh良好地描繪圖案。According to Modification 3 above, high-efficiency exposure using only the necessary scanning unit Un can be performed according to the width of the substrate FS to be exposed or the size of the exposure area W in the Y direction. Moreover, as shown in FIG. 43, when the scanning efficiency of the polygon mirror PM of each of the 12 scanning units U1 to U12 is 1/3 or less, for example, if the beam scanning is performed every three reflection surfaces RP of each polygon mirror PM , Even if it is a light beam from one light source device 14', the pattern can be drawn well at the maximum drawing width Sh.
又,以九個掃描單元U1~U9構成描繪裝置之情形,使用奇數號之五個掃描單元U1, U3, U5, U7, U9與偶數號之四個掃描單元U2, U4, U6, U8。因此,在藉由九個掃描單元U1~U9全部之描繪線SL1~SL9在曝光區域W描繪圖案時,多面鏡PM之掃描效率為1/3以下之情形,例如,只要每隔各多面鏡PM之一個反射面RP進行光束掃描即可。然而,此情形,只要反覆僅依序參照從奇數號掃描單元U1, U3, U5, U7, U9之各個之原點訊號SZn產生之副原點訊號ZP1, ZP3, ZP5, ZP7, ZP9,進行在奇數號描繪線SL1, SL3, SL5, SL7, SL9之各個之點掃描,反覆僅依序參照從偶數號掃描單元U2, U4, U6, U8之各個之原點訊號SZn產生之副原點訊號ZP2, ZP4, ZP6, ZP8,進行在偶數號描繪線SL2, SL4, SL6, SL8之各個之點掃描即可。Furthermore, in the case where nine scanning units U1 to U9 constitute the drawing device, five scanning units U1, U3, U5, U7, U9 of odd numbers and four scanning units U2, U4, U6, U8 of even numbers are used. Therefore, when the pattern is drawn in the exposure area W by all the drawing lines SL1 to SL9 of the nine scanning units U1 to U9, the scanning efficiency of the polygon mirror PM is 1/3 or less, for example, as long as every polygon mirror PM One of the reflecting surfaces RP can be scanned by the beam. However, in this case, as long as the reference signals ZP1, ZP3, ZP5, ZP7, ZP9 generated from the origin signals SZn of each of the odd-numbered scanning units U1, U3, U5, U7, U9 are sequentially referred to Odd number trace lines SL1, SL3, SL5, SL7, SL9 are scanned at each point, and only refer to the sub-origin signal ZP2 generated from the origin signals SZn of the even-numbered scanning units U2, U4, U6, U8 in turn. , ZP4, ZP6, ZP8, just scan the points of the even-numbered drawing lines SL2, SL4, SL6, SL8.
以上,在變形例3,提供圖案描繪方法,係使用描繪裝置,該描繪裝置將使來自光源裝置14’之光束之點光SP沿著描繪線SLn掃描之複數個掃描單元Un配置成各描繪線SLn所描繪之圖案在基板FS上於描繪線SLn之方向(主掃描方向)接續,使複數個掃描單元Un與基板FS在與主掃描方向交叉之副掃描方向相對移動,其特徵在於,包含:在複數個掃描單元Un中,選定對應基板FS在主掃描方向之寬、或基板FS上之被描繪圖案之曝光區域在主掃描方向之寬或者該曝光區域之位置之特定掃描單元之動作;以及將根據待以特定掃描單元之各個描繪之圖案資料進行強度調變之光束,透過配送來自光源裝置14’之光束之光束配送單元擇一地依序供應至特定掃描單元之各個之動作。藉此,在變形例3,即使基板FS之寬改變、基板FS上之曝光區域W之寬或位置改變,藉由適當地定位基板FS在Y方向之搬送位置,亦可進行維持高接續精度之精密圖案描繪。此外,此時,並非在複數個掃描單元全部之多面鏡PM之間使旋轉速度或旋轉角度相位同步,而是僅在有助於圖案描繪之特定掃描單元之多面鏡PM之間使旋轉速度或旋轉角度相位同步即可。As described above, in Modification 3, a pattern drawing method is provided by using a drawing device that arranges a plurality of scanning units Un that scan the spot light SP of the light beam from the light source device 14' along the drawing line SLn into each drawing line The pattern drawn by SLn is continued on the substrate FS in the direction of the drawing line SLn (main scanning direction), so that the plurality of scanning units Un and the substrate FS are relatively moved in the sub-scanning direction crossing the main scanning direction, which is characterized by including: In the plurality of scanning units Un, the action of selecting a specific scanning unit corresponding to the width of the substrate FS in the main scanning direction, or the width of the exposure area of the pattern drawn on the substrate FS in the main scanning direction, or the position of the exposure area; and The beams whose intensity is adjusted according to the pattern data to be drawn by each specific scanning unit will be sequentially supplied to the specific scanning units through the beam distribution unit that distributes the beams from the light source device 14'. Thus, in Modification 3, even if the width of the substrate FS changes or the width or position of the exposure area W on the substrate FS changes, by appropriately positioning the transport position of the substrate FS in the Y direction, it is possible to maintain high connection accuracy Precise pattern depiction. In addition, at this time, the rotation speed or the rotation angle phase is not synchronized between the polygon mirrors PM of all of the plurality of scanning units, but the rotation speed or the rotation speed or rotation angle of the polygon mirror PM of the specific scanning unit that contributes to the pattern drawing. The rotation angle and phase can be synchronized.
(變形例4)
再者,作為使用九個掃描單元U1~U9之描繪裝置之另一構成,並非以奇數號與偶數號分群,亦可單純地依照掃描單元Un之排列順序分成二群。亦即,亦可分成六個掃描單元U1~U6之第1掃描模組與三個掃描單元U7~U9之第2掃描模組,對第1掃描模組供應來自第1光源裝置14A’之光束LBa,對第2掃描模組供應來自第2光源裝置14B’之光束LBb。此情形,若多面鏡PM之掃描效率(α/β)為1/4<(α/β)≦1/3,則第1掃描模組內之六個掃描單元U1~U6之各個,與上述第4實施形態(圖33)相同,藉由每隔多面鏡PM之一個反射面RP之光束掃描,進行沿著各描繪線SL1~SL6之點光SP之掃描。
(Modification 4)
Furthermore, as another configuration of the drawing device using nine scanning units U1 to U9, it is not grouped by odd and even numbers, but can also be simply divided into two groups according to the arrangement order of the scanning units Un. That is, the first scanning module of six scanning units U1 to U6 and the second scanning module of three scanning units U7 to U9 can also be divided into the first scanning module to supply the light beam from the first
相對於此,第2掃描模組內之三個掃描單元U7~U9之各個可就多面鏡PM之所有反射面RP進行光束掃描。是以,若三個掃描單元U7~U9之各個直接就多面鏡PM之所有反射面RP進行光束掃描,則點光SP在六個掃描單元U1~U6之各個之各描繪線SL1~SL6之掃描之反覆時間間隔ΔTc1與點光SP在三個掃描單元U7~U9之各個之各描繪線SL7~SL9之掃描之反覆時間間隔ΔTc2成為ΔTc1=2ΔTc2之關係,藉由描繪線SL1~SL6在基板FS上描繪之圖案與藉由描繪線SL7~SL9在基板FS上描繪之圖案成為不同,無法進行良好之接續曝光。In contrast, each of the three scanning units U7 to U9 in the second scanning module can perform beam scanning on all the reflection surfaces RP of the polygon mirror PM. Therefore, if each of the three scanning units U7~U9 directly performs beam scanning on all the reflection surfaces RP of the polygon mirror PM, the spot light SP scans the drawing lines SL1~SL6 of each of the six scanning units U1~U6 The repetitive time interval ΔTc1 and the point light SP in the three scanning units U7~U9 each of the scanning lines SL7~SL9 scanning repetitive time interval ΔTc2 becomes ΔTc1=2ΔTc2, by drawing lines SL1~SL6 on the substrate FS The pattern drawn above is different from the pattern drawn on the substrate FS by the drawing lines SL7 to SL9, and a good continuous exposure cannot be performed.
因此,在可進行就多面鏡PM之所有反射面RP之光束掃描之三個掃描單元U7~U9之各個,亦以進行每隔多面鏡PM之一個反射面RP之光束掃描之方式進行控制。上述控制可藉由下述動作實現,即將從掃描單元U7~U9之各個產生之原點訊號SZ7~SZ9輸入圖31之電路或圖38中之副原點產生電路CAan等以產生副原點訊號ZP7~ZP9之動作,及回應該副原點訊號ZP7~ZP9、使對應之選擇用光學元件AOM7~AOM9之各個在一定時間Ton依序成為ON狀態且將對應待以描繪線SL7~SL9之各個描繪之圖案之描繪用序列資料DL7~DL9之各個依序傳送至第2光源裝置14B’內之電器光學元件206之驅動電路206a之動作。Therefore, each of the three scanning units U7 to U9 that can scan the light beams of all the reflection surfaces RP of the polygon mirror PM is also controlled in such a way that the light beams are scanned every one reflection surface RP of the polygon mirror PM. The above control can be realized by the action that the origin signals SZ7 to SZ9 generated from each of the scanning units U7 to U9 are input to the circuit in FIG. 31 or the secondary origin generating circuit CAan in FIG. 38 to generate the secondary origin signal The actions of ZP7~ZP9 and the response to the secondary origin signals ZP7~ZP9, so that the corresponding selection optical elements AOM7~AOM9 will be turned ON in sequence at a certain time and will correspond to the lines SL7~SL9 to be drawn. The drawn sequence data DL7 to DL9 are sequentially transmitted to the
(變形例5) 圖44係顯示變形例5之選擇用光學元件AOMn之驅動器電路DRVn之構成。如上述各實施形態或變形例所說明,複數個掃描單元Un之各個每隔多面鏡PM之一個反射面RP以上進行光束掃描之情形,從光源裝置14’(14A’, 14B’)射出之光束LB(LBa, LBb)或從描繪用光學元件AOMa, AOMb射出之光束LBs, LBp透射過沿著其光路配置之複數個選擇用光學元件AOMn。圖44中,光束LB,在透射過選擇用光學元件AOM1, AOM2後,被選擇用光學元件AOM3切換,產生朝向掃描單元U3之光束LB3。一般而言,選擇用光學元件AOMn內之光學材料,對紫外波長域之光束LB(例如波長355nm)具有較高之透射率,但具有數%程度之衰減率。 (Modification 5) FIG. 44 shows the configuration of the driver circuit DRVn of the optical element for selection AONn in Modification 5. FIG. As described in the above embodiments or modified examples, when each of the plurality of scanning units Un performs beam scanning above one reflection surface RP of the polygon mirror PM, the light beam emitted from the light source device 14' (14A', 14B') LB (LBa, LBb) or light beams LBs, LBp emitted from the optical elements for drawing AOMa, AOMb are transmitted through a plurality of optical elements for selection AONn arranged along their optical paths. In FIG. 44, the light beam LB, after passing through the selection optical elements AOM1 and AOM2, is switched by the selection optical element AOM3 to generate the light beam LB3 toward the scanning unit U3. Generally speaking, the optical material in the optical element AOMn is selected to have a high transmittance to the light beam LB in the ultraviolet wavelength range (for example, a wavelength of 355 nm), but an attenuation rate of about several percent.
設各選擇用光學元件AOMn之透射率為95%之情形,如圖44所示,選擇用光學元件AOM3成為ON狀態時,射入選擇用光學元件AOM3之光束LB之強度承受二個選擇用光學元件AOM1, AOM2之衰減,因此相對於射入選擇用光學元件AOM1之原本之光束強度(100%)成為約90%(0.95 2)。再者,六個選擇用光學元件AOM1~AOM6相連之情形,射入最後之選擇用光學元件AOM6之光束LB之強度承受五個選擇用光學元件AOM1~AOM5之衰減,因此相對於原本之光束強度(100%)成為約77%(0.95 5)。 Assuming that the transmittance of each selection optical element AOMn is 95%, as shown in FIG. 44, when the selection optical element AOM3 is turned on, the intensity of the light beam LB incident on the selection optical element AOM3 is subjected to two selection optics The attenuation of the elements AOM1 and AOM2 is about 90% (0.95 2 ) relative to the original beam intensity (100%) of the incident selection optical element AOM1. Furthermore, in the case where the six selection optical elements AOM1~AOM6 are connected, the intensity of the light beam LB incident on the final selection optical element AOM6 is attenuated by the five selection optical elements AOM1~AOM5, so it is relative to the original beam intensity (100%) becomes approximately 77% (0.95 5 ).
因此,射入六個選擇用光學元件AOM1~AOM6之各個之光束LB之強度依序成為100%、95%、90%、85%、81%、77%。此意味著被選擇用光學元件AOM1~AOM6之各個偏向後射出之光束LB1~LB6之強度亦以其比率改變。因此,在本變形例5,在圖38所示之複數個選擇用光學元件AOMn之各個之驅動器電路DRVn,調整選擇用光學元件AOM1~AOM6之驅動條件,控制成使光束LB1~LB6之強度之變動減少。Therefore, the intensity of the light beam LB incident on each of the six selection optical elements AOM1 to AOM6 becomes 100%, 95%, 90%, 85%, 81%, 77% in sequence. This means that the intensities of the beams LB1~LB6 emitted backward by each of the selected optical elements AOM1~AOM6 also change at their ratios. Therefore, in this modification 5, in the driver circuits DRVn of each of the plurality of selection optical elements AOMn shown in FIG. 38, the driving conditions of the selection optical elements AOM1 to AOM6 are adjusted to control the intensity of the light beams LB1 to LB6 Changes are reduced.
圖44中,由於驅動器電路DRV1~DRV6(DRV5, DRV6係省略圖示)皆為相同構成,因此僅針對驅動器電路DRV1進行詳細說明。如上述圖38所示,對驅動器電路DRV1~DRV6之各個輸入設定選擇用光學元件AOM1~AOM6(圖44中,省略AOM5, AOM6之圖示)之各個之ON狀態之時間Ton之資訊與副原點訊號ZP1~ZP6。又,圖44之構成中,共通地設有用以對選擇用光學元件AOM1~AOM6之各個施加超音波之高頻發訊源400。驅動器電路DRV1具備接受來自高頻發訊源400之高頻訊號且高速地切換是否傳送至將其增幅成高電壓之振幅之放大器402之切換元件401、根據設定時間Ton之資訊與副原點訊號ZP1控制切換元件401之開閉之邏輯電路403、及調整放大器402之增幅率(增益)以調整施加至選擇用光學元件AOM1之高壓之高頻訊號之振幅之增益調整器404。In FIG. 44, since the driver circuits DRV1 to DRV6 (DRV5 and DRV6 are not shown) have the same configuration, only the driver circuit DRV1 will be described in detail. As shown in FIG. 38 described above, the information on the time Ton of each ON state of the selection optical elements AOM1 to AOM6 (the illustrations of AOM5 and AOM6 are omitted in FIG. 44) of each input of the driver circuits DRV1 to DRV6 is set to the information and sub-origin Point signal ZP1~ZP6. In addition, in the configuration of FIG. 44, a high-
若施加至選擇用光學元件AOM1之高壓之高頻訊號之振幅在容許範圍內改變,則可微調選擇用光學元件AOM1之繞射效率,可改變偏向後射出之光束LB1(1次繞射光)之強度。因此,在本變形例5,以依照從接近光源裝置14’側之選擇用光學元件AOM1之驅動器電路DRV1至遠離光源裝置14’側之選擇用光學元件AOM6之驅動器電路DRV6之順序使施加至各選擇用光學元件AOMn之高壓之高頻訊號之振幅變高之方式,調整增益調整器404。例如,將施加至光束LB之光路終端之選擇用光學元件AOM6之高壓之高頻訊號之振幅設定成繞射效率最高之值Va6,將施加至光束LB之光路最初之選擇用光學元件AOM1之高壓之高頻訊號之振幅設定成在容許範圍內繞射效率成為降低狀態之值Va1。施加至之間之選擇用光學元件AOM2~AOM5之高壓之高頻訊號之振幅Va2~Va5係設定成Va1<Va2<Va3<Va4<Va5<Va6。If the amplitude of the high-frequency high-frequency signal applied to the selection optical element AOM1 changes within the allowable range, the diffraction efficiency of the selection optical element AOM1 can be fine-tuned to change the beam LB1 (first-order diffracted light) emitted backward strength. Therefore, in this modification 5, the driver circuit DRV1 of the selection optical element AOM1 close to the light source device 14' side to the driver circuit DRV6 of the selection optical element AOM6 far from the light source device 14' side are applied to each Select the way in which the amplitude of the high-frequency high-frequency signal of the optical element AOMn becomes higher, and adjust the
根據以上設定,能緩和或抑制從六個選擇用光學元件AOM1~AOM6之各個射出之光束LB1~LB6之強度偏差。藉此,可抑制各描繪線SL1~SL6之各個所描繪之圖案之曝光量之偏差,可進行高精度之圖案描繪。此外,藉由各驅動器電路DRV1~DRV6設定之高壓之高頻訊號之振幅Va1~Va6,不須依序變大,亦可為例如Va1=Va2<Va3=Va4<Va5=Va6之關係。又,就各掃描單元U1~U6調整成為點光SP之描繪用光束LB1~LB6之強度方式,除了變形例5之方法以外,亦可為在各掃描單元U1~U6內之光路中設置具有既定透射率之減光濾鏡(ND濾鏡)之方法。According to the above settings, the intensity deviation of the light beams LB1 to LB6 emitted from each of the six selection optical elements AOM1 to AOM6 can be alleviated or suppressed. By this, the deviation of the exposure amount of the patterns drawn by the drawing lines SL1 to SL6 can be suppressed, and pattern drawing with high accuracy can be performed. In addition, the amplitudes Va1 to Va6 of the high-frequency high-frequency signals set by the driver circuits DRV1 to DRV6 do not need to be increased in order, and may also be, for example, the relationship of Va1=Va2<Va3=Va4<Va5=Va6. In addition, in addition to the method of Modification 5, the intensity method of adjusting the scanning beams LB1 to LB6 of the spot light SP to the scanning units U1 to U6 can also be set in the optical path of each scanning unit U1 to U6 with a predetermined Transmittance reduction filter (ND filter) method.
此外,在圖44之驅動器電路DRVn,藉由切換元件401切換是否將來自高頻發訊源400之高頻訊號傳送至放大器402。然而,為了提高選擇用光學元件AOMn之ON/OFF切換時之回應性(上升特性),亦可為繞射效率實質上視為0之狀態,例如,將1次繞射光之強度相對於ON時之強度成為1/1000以下之低位準之高頻訊號恆持續施加至選擇用光學元件AOMn,僅在ON狀態時將適當之高位準之高頻訊號施加至選擇用光學元件AOMn。圖45係顯示上述驅動器電路DRVn之構成,此處代表性地顯示驅動器電路DRV1之構成,對與圖44中之構件相同者附加相同符號。In addition, in the driver circuit DRVn of FIG. 44, the switching
在圖45之構成,追加串聯之二個電阻RE1, RE2。電阻RE1, RE2之直列電路,在切換元件401之前方並列地插入高頻發訊源400,以電阻比RE2/(RE1+RE2)分壓之來自高頻發訊源400之高頻訊號恆施加至放大器402。設電阻RE2為可變電阻,切換元件401為OFF(非導通)狀態時,以從選擇用光學元件AOM1射出之1次繞射光、亦即光束LB1之強度成為充分小之值(例如原本之強度之1/1000以下)之方式,調整施加至選擇用光學元件AOM1之高頻訊號之位準。如上述,藉由電阻RE1, RE2對選擇用光學元件AOM1施加高頻訊號之偏壓(上升),藉此提升回應性。此外,此情形,在切換元件401為OFF(非導通)狀態時亦為極弱之強度,但由於光束LB1射入對應之掃描單元U1,因此因某些問題而在描繪動作中基板FS之搬送速度降低或停止之情形,關閉設在光源裝置14’(14A’, 14B’)之出口之光閘或插入減光濾鏡。In the configuration of FIG. 45, two resistors RE1 and RE2 connected in series are added. The in-line circuit of the resistors RE1 and RE2 is inserted in parallel with the high-
(變形例6) 在以上各實施形態、各變形例,在使片狀基板FS密合於旋轉筒DR之外周面之狀態下,在彎曲成圓筒面狀之基板FS之表面沿著複數個掃描單元Un之各個之描繪線SLn進行圖案描繪。然而,例如,國際公開第WO2013/150677號公報所揭示,亦可為一邊將基板FS支承成平面狀並同時往長邊方向搬送一邊進行曝光處理之構成。此情形,若基板FS之表面設定成與XY平面平行,則例如只要以圖23、圖24所示之奇數號掃描單元U1, U3, U5之各照射中心軸Le1, Le3, Le5與偶數號掃描單元U2, U4, U6之各照射中心軸Le2, Le4, Le6在與XZ平面平行之面內觀察時彼此與Z軸平行且以一定間隔位於X方向之方式配置複數個掃描單元U1~U6即可。 (Modification 6) In each of the above embodiments and modifications, in a state where the sheet-like substrate FS is closely attached to the outer peripheral surface of the rotating drum DR, the surface of the substrate FS curved into a cylindrical surface is along each of the plurality of scanning units Un The drawing line SLn performs pattern drawing. However, for example, as disclosed in International Publication No. WO2013/150677, it may be configured to perform exposure processing while supporting the substrate FS in a planar shape and simultaneously transporting it in the longitudinal direction. In this case, if the surface of the substrate FS is set to be parallel to the XY plane, for example, as long as the odd-numbered scanning units U1, U3, U5 shown in FIGS. 23 and 24 are irradiated to the central axes Le1, Le3, Le5 and even-numbered scans When the irradiation central axes Le2, Le4, Le6 of the units U2, U4, U6 are viewed in a plane parallel to the XZ plane, they are parallel to the Z axis and are located in the X direction at a certain interval. .
AXp:旋轉軸
CYa, CYb:圓柱狀透鏡
DR:旋轉筒
FS:基板
FT:fθ透鏡
LB:光束
PM:多面鏡
RP:反射面
U1~U6:掃描單元
14, 14a, 14b:光源裝置
16:描繪頭
40a, 40b:光導入光學系
42, 104:聚光透鏡
44, 100, 108:準直鏡
46, 52, 60, 68, 102, 110, 114, 122:反射鏡
50, 58, 66:選擇用光學元件
70:吸收體
106:描繪用光學元件
AXp: axis of rotation
CYa, CYb: cylindrical lens
DR: rotating drum
FS: substrate
FT: fθ lens
LB: light beam
PM: polygon mirror
RP: reflective surface
U1~U6: Scanning
圖1係顯示第1實施形態之包含對基板施加曝光處理之曝光裝置之元件製造系統之概略構成之圖。 圖2係顯示支承圖1所示之描繪頭及旋轉筒之支承架之圖。 圖3係顯示圖1之描繪頭之構成之圖。 圖4係圖3所示之光導入光學系之詳細構成圖。 圖5係顯示藉由圖3所示之各掃描單元被掃描點光之描繪線之圖。 圖6係顯示圖3所示之各掃描單元之多面鏡與描繪線之掃描方向之關係之圖。 圖7係用以說明能以圖3所示之多面鏡之反射面射入f-θ透鏡之方式使雷射光偏向(反射)之多面鏡之旋轉角度之圖。 圖8係將圖3所示之光導入光學系與複數個掃描單元之光路示意化之圖。 圖9係顯示上述第1實施形態之變形例之描繪頭之構成之圖。 圖10係圖9所示之光導入光學系之詳細構成圖。 圖11係顯示第2實施形態之描繪頭之構成之圖。 圖12係顯示圖11所示之光導入光學系之圖。 圖13係將圖12所示之光導入光學系與複數個掃描單元之光路示意化之圖。 圖14係顯示圖13所示之複數個掃描單元之各多面鏡之旋轉驅動用之控制電路例之方塊圖。 圖15係顯示圖14所示之控制電路之動作例之時序圖。 圖16係顯示產生供應至圖11~圖13所示之描繪用光學元件之描繪位元列資料之電路例之方塊圖。 圖17係顯示第2實施形態之變形例之光源裝置之構成之圖。 圖18係顯示第3實施形態之描繪控制用之控制單元之構成之方塊圖。 圖19係顯示圖18之控制單元在圖案描繪時之各部之訊號狀態與雷射光之振盪狀態之時間圖。 圖20係顯示以圖17之光源裝置之控制電路所作之脈衝光振盪用之時脈訊號之時間圖。 圖21係說明為了修正描繪倍率而修正圖20之時脈訊號之情形之時間圖。 圖22係說明在一條描繪線(掃描線)之描繪倍率之修正法之圖。 圖23係顯示第4實施形態之包含對基板施加曝光處理之曝光裝置之元件製造系統之概略構成之圖。 圖24係捲繞有基板之圖23之旋轉筒之詳細圖。 圖25係顯示點光之描繪線及形成在基板上之對準標記之圖。 圖26係光束切換構件之構成圖。 圖27A係從+Z方向側觀察選擇用光學元件進行之光束之光路切換之圖,圖27B係從-Y方向側觀察選擇用光學元件進行之光束之光路切換之圖。 圖28係顯示掃描單元之光學構成之圖。 圖29係顯示設在圖28之多面鏡周邊之原點感測器之構成之圖。 圖30係顯示原點訊號之產生時序與描繪開始時序之關係之圖。 圖31係用以產生與原點訊號隔開使其產生時序延遲既定時間之副原點訊號之副原點產生電路圖。 圖32係顯示藉由圖31之副原點產生電路產生之副原點訊號之時間圖。 圖33係顯示曝光裝置之電氣構成之方塊圖。 圖34係顯示輸出原點訊號、副原點訊號、及序列資料之時序之時間圖。 圖35係顯示圖33所示之描繪資料輸出控制部之構成之圖。 圖36係本第5實施形態之光束切換構件之構成圖。 圖37係顯示圖36之配置切換構件之位置為第1位置時之光路之圖。 圖38係顯示第5實施形態之光路切換控制部之構成之圖。 圖39係顯示圖38之邏輯電路之構成之圖。 圖40係顯示說明圖39之邏輯電路之動作之時序圖。 圖41係本第6實施形態之光束切換構件之構成圖。 圖42係顯示使第6實施形態中選擇用光學元件(聲光調變元件)之配置旋轉90度之情形之構成之圖。 圖43係顯示變形例3之基板之搬送形態與描繪線之配置關係之圖。 圖44係顯示變形例5之選擇用光學元件(聲光調變元件)之驅動器電路之構成之圖。 圖45係顯示圖44中之驅動器電路之變形例之圖。 FIG. 1 is a diagram showing a schematic configuration of a device manufacturing system including an exposure apparatus that applies exposure processing to a substrate according to the first embodiment. FIG. 2 is a diagram showing a support frame supporting the drawing head and the rotating cylinder shown in FIG. 1. FIG. Fig. 3 is a diagram showing the configuration of the drawing head of Fig. 1. 4 is a detailed configuration diagram of the light introduction optical system shown in FIG. 3. FIG. 5 is a diagram showing trace lines of spot light scanned by each scanning unit shown in FIG. 3. 6 is a diagram showing the relationship between the polygon mirror of each scanning unit shown in FIG. 3 and the scanning direction of the drawing line. FIG. 7 is a diagram for explaining the rotation angle of a polygon mirror capable of deflecting (reflecting) laser light in such a manner that the reflection surface of the polygon mirror shown in FIG. 3 enters the f-θ lens. FIG. 8 is a schematic diagram of introducing the light shown in FIG. 3 into the optical system and the optical paths of a plurality of scanning units. Fig. 9 is a diagram showing the configuration of a drawing head according to a modification of the first embodiment. FIG. 10 is a detailed configuration diagram of the light introduction optical system shown in FIG. 9. FIG. 11 is a diagram showing the configuration of the drawing head in the second embodiment. FIG. 12 is a diagram showing the light introduction optical system shown in FIG. 11. FIG. 13 is a schematic diagram of introducing the light shown in FIG. 12 into the optical system and the optical paths of a plurality of scanning units. 14 is a block diagram showing an example of a control circuit for rotationally driving the polygon mirrors of the plurality of scanning units shown in FIG. FIG. 15 is a timing chart showing an operation example of the control circuit shown in FIG. 14. 16 is a block diagram showing an example of a circuit for generating drawing bit row data supplied to the drawing optical elements shown in FIGS. 11 to 13. FIG. 17 is a diagram showing the configuration of a light source device according to a modification of the second embodiment. 18 is a block diagram showing the structure of a control unit for drawing control in the third embodiment. FIG. 19 is a time chart showing the signal state of each part and the oscillation state of laser light of the control unit of FIG. 18 during pattern drawing. FIG. 20 is a timing chart showing the clock signal used for pulse light oscillation by the control circuit of the light source device of FIG. 17. FIG. 21 is a time chart illustrating the case of correcting the clock signal of FIG. 20 in order to correct the drawing magnification. FIG. 22 is a diagram illustrating a correction method of drawing magnification in one drawing line (scanning line). FIG. 23 is a diagram showing a schematic configuration of a device manufacturing system including an exposure apparatus that applies exposure processing to a substrate according to the fourth embodiment. 24 is a detailed view of the rotating drum of FIG. 23 with the substrate wound. FIG. 25 is a diagram showing trace lines of spot light and alignment marks formed on the substrate. Fig. 26 is a configuration diagram of a beam switching member. FIG. 27A is a view of the optical path switching of the light beam by the selection optical element viewed from the +Z direction side, and FIG. 27B is a view of the optical path switching of the light beam by the selection optical element viewed from the -Y direction side. FIG. 28 is a diagram showing the optical configuration of the scanning unit. FIG. 29 is a diagram showing the structure of an origin sensor provided around the polygon mirror of FIG. 28. FIG. FIG. 30 is a diagram showing the relationship between the timing of origin signal generation and the timing of start of drawing. FIG. 31 is a sub-origin generating circuit diagram for generating a sub-origin signal that is separated from the origin signal so that its timing is delayed by a predetermined time. FIG. 32 is a timing chart of the secondary origin signal generated by the secondary origin generation circuit of FIG. 31. Fig. 33 is a block diagram showing the electrical configuration of the exposure apparatus. Fig. 34 is a timing chart showing the timing of outputting the origin signal, sub-origin signal, and sequence data. FIG. 35 is a diagram showing the configuration of the drawing data output control unit shown in FIG. 33. Fig. 36 is a configuration diagram of a beam switching member according to the fifth embodiment. 37 is a diagram showing the optical path when the position of the arrangement switching member of FIG. 36 is the first position. Fig. 38 is a diagram showing the configuration of the optical path switching control unit in the fifth embodiment. FIG. 39 is a diagram showing the structure of the logic circuit of FIG. 38. FIG. 40 is a timing diagram illustrating the operation of the logic circuit of FIG. 39. Fig. 41 is a configuration diagram of a beam switching member according to the sixth embodiment. FIG. 42 is a diagram showing a configuration in a case where the arrangement of the selection optical element (acousto-optic modulation element) in the sixth embodiment is rotated by 90 degrees. FIG. 43 is a diagram showing the arrangement relationship between the transfer form of the substrate of Modification 3 and the drawing lines. 44 is a diagram showing the configuration of a driver circuit of a selection optical element (acousto-optic modulation element) of Modification 5. FIG. FIG. 45 is a diagram showing a modification of the driver circuit in FIG. 44. FIG.
AXp:旋轉軸
CYa, CYb:圓柱狀透鏡
DR:旋轉筒
FS:基板
FT:fθ透鏡
LB:光束
PM:多面鏡
RP:反射面
U1~U6:掃描單元
14, 14a, 14b:光源裝置
16:描繪頭
40a, 40b:光導入光學系
42, 104:聚光透鏡
44, 100, 108:準直鏡
46, 52, 60, 68, 102, 110, 114, 122:反射鏡
50, 58, 66:選擇用光學元件
70:吸收體
106:描繪用光學元件
AXp: axis of rotation
CYa, CYb: cylindrical lens
DR: rotating drum
FS: substrate
FT: fθ lens
LB: light beam
PM: polygon mirror
RP: reflective surface
U1~U6: Scanning
Claims (10)
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JP2014092862A JP6349924B2 (en) | 2014-04-28 | 2014-04-28 | Pattern drawing device |
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JPJP2015-083669 | 2015-04-15 | ||
JP2015083669A JP6569281B2 (en) | 2015-04-15 | 2015-04-15 | Beam scanning apparatus and beam scanning method |
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TW104113456A TWI624689B (en) | 2014-04-28 | 2015-04-28 | Pattern drawing device |
TW109123862A TWI712819B (en) | 2014-04-28 | 2015-04-28 | Pattern exposure device |
TW109123865A TWI712820B (en) | 2014-04-28 | 2015-04-28 | Pattern exposure device |
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TW109123865A TWI712820B (en) | 2014-04-28 | 2015-04-28 | Pattern exposure device |
TW107105593A TWI684789B (en) | 2014-04-28 | 2015-04-28 | Pattern drawing device |
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