TWI693731B - 高頻超音波壓電元件、其製造方法以及包含該高頻超音波壓電元件的高頻超音波探頭 - Google Patents

高頻超音波壓電元件、其製造方法以及包含該高頻超音波壓電元件的高頻超音波探頭 Download PDF

Info

Publication number
TWI693731B
TWI693731B TW105119414A TW105119414A TWI693731B TW I693731 B TWI693731 B TW I693731B TW 105119414 A TW105119414 A TW 105119414A TW 105119414 A TW105119414 A TW 105119414A TW I693731 B TWI693731 B TW I693731B
Authority
TW
Taiwan
Prior art keywords
piezoelectric
piezoelectric element
lower electrode
frequency ultrasonic
concave portion
Prior art date
Application number
TW105119414A
Other languages
English (en)
Chinese (zh)
Other versions
TW201705560A (zh
Inventor
小林牧子
田邊將之
椎名毅
隅田劍生
河口範夫
Original Assignee
國立大學法人熊本大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 國立大學法人熊本大學 filed Critical 國立大學法人熊本大學
Publication of TW201705560A publication Critical patent/TW201705560A/zh
Application granted granted Critical
Publication of TWI693731B publication Critical patent/TWI693731B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/13—Tomography
    • A61B8/14—Echo-tomography

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
TW105119414A 2015-06-24 2016-06-21 高頻超音波壓電元件、其製造方法以及包含該高頻超音波壓電元件的高頻超音波探頭 TWI693731B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2015-126268 2015-06-24
JP2015126268A JP6122066B2 (ja) 2015-06-24 2015-06-24 高周波超音波圧電素子、その製造方法、及びそれを含む高周波超音波プローブ

Publications (2)

Publication Number Publication Date
TW201705560A TW201705560A (zh) 2017-02-01
TWI693731B true TWI693731B (zh) 2020-05-11

Family

ID=57584920

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105119414A TWI693731B (zh) 2015-06-24 2016-06-21 高頻超音波壓電元件、其製造方法以及包含該高頻超音波壓電元件的高頻超音波探頭

Country Status (3)

Country Link
JP (1) JP6122066B2 (enExample)
TW (1) TWI693731B (enExample)
WO (1) WO2016208425A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101965171B1 (ko) * 2018-08-24 2019-08-13 (주)비티비엘 초음파센서의 제조방법
WO2023140166A1 (ja) * 2022-01-19 2023-07-27 株式会社Cast 超音波プローブおよび超音波プローブの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012011024A (ja) * 2010-07-01 2012-01-19 Konica Minolta Medical & Graphic Inc 超音波探触子、および超音波診断装置
JP2013168573A (ja) * 2012-02-16 2013-08-29 Mitsubishi Heavy Ind Ltd 超音波厚みセンサの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH071920Y2 (ja) * 1988-05-10 1995-01-18 東レ株式会社 超音波トランスデューサ
JP2002008939A (ja) * 2000-04-13 2002-01-11 Fujitsu Ltd 選択的コーティングによるセラミック体の製造方法
JP4759117B2 (ja) * 2000-06-22 2011-08-31 日本特殊陶業株式会社 金属酸化物膜付き基板及び金属酸化物膜付き基板の製造方法
JP2004111835A (ja) * 2002-09-20 2004-04-08 Canon Inc 圧電体素子の製造方法、圧電体素子及びインクジェット式記録ヘッド
JP2005327919A (ja) * 2004-05-14 2005-11-24 Seiko Epson Corp デバイスの製造方法及びデバイス、電気光学素子、プリンタ
US7449821B2 (en) * 2005-03-02 2008-11-11 Research Triangle Institute Piezoelectric micromachined ultrasonic transducer with air-backed cavities
JP5540361B2 (ja) * 2011-06-07 2014-07-02 日立Ｇｅニュークリア・エナジー株式会社 超音波センサ及びその製造方法
JP2013207155A (ja) * 2012-03-29 2013-10-07 Mitsubishi Materials Corp 強誘電体薄膜の製造方法
JP6132337B2 (ja) * 2013-04-24 2017-05-24 国立大学法人電気通信大学 超音波診断装置及び超音波画像構築方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012011024A (ja) * 2010-07-01 2012-01-19 Konica Minolta Medical & Graphic Inc 超音波探触子、および超音波診断装置
JP2013168573A (ja) * 2012-02-16 2013-08-29 Mitsubishi Heavy Ind Ltd 超音波厚みセンサの製造方法

Also Published As

Publication number Publication date
TW201705560A (zh) 2017-02-01
WO2016208425A1 (ja) 2016-12-29
JP2017011144A (ja) 2017-01-12
JP6122066B2 (ja) 2017-04-26

Similar Documents

Publication Publication Date Title
US10864553B2 (en) Piezoelectric transducers and methods of making and using the same
US9812634B2 (en) Method of making thick film transducer arrays
US7449821B2 (en) Piezoelectric micromachined ultrasonic transducer with air-backed cavities
JP2000050391A (ja) 超音波トランスデューサーおよびその製造方法
JPH07322396A (ja) 音響波送受信装置
Tipsawat et al. 32 element piezoelectric micromachined ultrasound transducer (PMUT) phased array for neuromodulation
TWI693731B (zh) 高頻超音波壓電元件、其製造方法以及包含該高頻超音波壓電元件的高頻超音波探頭
JP2000028595A (ja) 圧電構造体の製造方法および複合圧電振動子
JP2000300559A (ja) 超音波探触子及びその製造方法
US20050179345A1 (en) Piezoelectric element and method of manufacturing the same
CN102205311A (zh) 具有宽束超声波换能器的短距离超声波装置
CN107068849B (zh) 压电元件、压电元件的形成方法及超声波装置
Zhao et al. Broadband and high-pressure output pMUT array based on lead-free KNN thin film
JPH11285096A (ja) 複合圧電振動子
KR102000689B1 (ko) 원심 패턴 충진 장치 및 이를 이용한 초음파 압전 센서의 제조 방법, 그리고 이러한 방법으로 제조된 초음파 압전 센서 혹은 초음파 인식 센서
JP2007158467A (ja) 超音波プローブ及びその製造方法
Pedersen et al. Fabrication of high-frequency pMUT arrays on silicon substrates
US20230002213A1 (en) Micro-machined ultrasound transducers with insulation layer and methods of manufacture
JP2000307162A (ja) 圧電構造体および複合圧電振動子の製造方法、複合圧電振動子
JP2024528548A (ja) 絶縁層を伴う微小機械加工超音波トランスデューサ、および、製造の方法
JP2022076783A5 (enExample)
JP7666048B2 (ja) 電気機械変換素子、超音波トランスデューサ、超音波探触子、超音波診断装置
TW202200967A (zh) 陣列式超音波感測器的製備方法及陣列式超音波感測器
JP2003174698A (ja) 複合圧電体およびその製造方法
JP3171715B2 (ja) 高周波数用の配列型超音波探触子

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees