JP6122066B2 - 高周波超音波圧電素子、その製造方法、及びそれを含む高周波超音波プローブ - Google Patents

高周波超音波圧電素子、その製造方法、及びそれを含む高周波超音波プローブ Download PDF

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Publication number
JP6122066B2
JP6122066B2 JP2015126268A JP2015126268A JP6122066B2 JP 6122066 B2 JP6122066 B2 JP 6122066B2 JP 2015126268 A JP2015126268 A JP 2015126268A JP 2015126268 A JP2015126268 A JP 2015126268A JP 6122066 B2 JP6122066 B2 JP 6122066B2
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Japan
Prior art keywords
piezoelectric
lower electrode
piezoelectric film
piezoelectric element
frequency ultrasonic
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Application number
JP2015126268A
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English (en)
Japanese (ja)
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JP2017011144A (ja
JP2017011144A5 (enExample
Inventor
牧子 小林
牧子 小林
将之 田邉
将之 田邉
椎名　毅
毅 椎名
剣生 隅田
剣生 隅田
範夫 河口
範夫 河口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACADEMIC INDUSTRY RESEARCH INC.
Kumamoto University NUC
Kyoto University NUC
Original Assignee
ACADEMIC INDUSTRY RESEARCH INC.
Kumamoto University NUC
Kyoto University NUC
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Publication date
Application filed by ACADEMIC INDUSTRY RESEARCH INC., Kumamoto University NUC, Kyoto University NUC filed Critical ACADEMIC INDUSTRY RESEARCH INC.
Priority to JP2015126268A priority Critical patent/JP6122066B2/ja
Priority to PCT/JP2016/067395 priority patent/WO2016208425A1/ja
Priority to TW105119414A priority patent/TWI693731B/zh
Publication of JP2017011144A publication Critical patent/JP2017011144A/ja
Publication of JP2017011144A5 publication Critical patent/JP2017011144A5/ja
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
    • A61B8/13—Tomography
    • A61B8/14—Echo-tomography

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
JP2015126268A 2015-06-24 2015-06-24 高周波超音波圧電素子、その製造方法、及びそれを含む高周波超音波プローブ Active JP6122066B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015126268A JP6122066B2 (ja) 2015-06-24 2015-06-24 高周波超音波圧電素子、その製造方法、及びそれを含む高周波超音波プローブ
PCT/JP2016/067395 WO2016208425A1 (ja) 2015-06-24 2016-06-10 高周波超音波圧電素子、その製造方法、及びそれを含む高周波超音波プローブ
TW105119414A TWI693731B (zh) 2015-06-24 2016-06-21 高頻超音波壓電元件、其製造方法以及包含該高頻超音波壓電元件的高頻超音波探頭

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015126268A JP6122066B2 (ja) 2015-06-24 2015-06-24 高周波超音波圧電素子、その製造方法、及びそれを含む高周波超音波プローブ

Publications (3)

Publication Number Publication Date
JP2017011144A JP2017011144A (ja) 2017-01-12
JP2017011144A5 JP2017011144A5 (enExample) 2017-02-16
JP6122066B2 true JP6122066B2 (ja) 2017-04-26

Family

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JP2015126268A Active JP6122066B2 (ja) 2015-06-24 2015-06-24 高周波超音波圧電素子、その製造方法、及びそれを含む高周波超音波プローブ

Country Status (3)

Country Link
JP (1) JP6122066B2 (enExample)
TW (1) TWI693731B (enExample)
WO (1) WO2016208425A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101965171B1 (ko) * 2018-08-24 2019-08-13 (주)비티비엘 초음파센서의 제조방법
WO2023140166A1 (ja) * 2022-01-19 2023-07-27 株式会社Cast 超音波プローブおよび超音波プローブの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH071920Y2 (ja) * 1988-05-10 1995-01-18 東レ株式会社 超音波トランスデューサ
JP2002008939A (ja) * 2000-04-13 2002-01-11 Fujitsu Ltd 選択的コーティングによるセラミック体の製造方法
JP4759117B2 (ja) * 2000-06-22 2011-08-31 日本特殊陶業株式会社 金属酸化物膜付き基板及び金属酸化物膜付き基板の製造方法
JP2004111835A (ja) * 2002-09-20 2004-04-08 Canon Inc 圧電体素子の製造方法、圧電体素子及びインクジェット式記録ヘッド
JP2005327919A (ja) * 2004-05-14 2005-11-24 Seiko Epson Corp デバイスの製造方法及びデバイス、電気光学素子、プリンタ
US7449821B2 (en) * 2005-03-02 2008-11-11 Research Triangle Institute Piezoelectric micromachined ultrasonic transducer with air-backed cavities
JP2012011024A (ja) * 2010-07-01 2012-01-19 Konica Minolta Medical & Graphic Inc 超音波探触子、および超音波診断装置
JP5540361B2 (ja) * 2011-06-07 2014-07-02 日立Ｇｅニュークリア・エナジー株式会社 超音波センサ及びその製造方法
JP2013168573A (ja) * 2012-02-16 2013-08-29 Mitsubishi Heavy Ind Ltd 超音波厚みセンサの製造方法
JP2013207155A (ja) * 2012-03-29 2013-10-07 Mitsubishi Materials Corp 強誘電体薄膜の製造方法
JP6132337B2 (ja) * 2013-04-24 2017-05-24 国立大学法人電気通信大学 超音波診断装置及び超音波画像構築方法

Also Published As

Publication number Publication date
TW201705560A (zh) 2017-02-01
TWI693731B (zh) 2020-05-11
WO2016208425A1 (ja) 2016-12-29
JP2017011144A (ja) 2017-01-12

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