TWI693603B - 非揮發性記憶體設備 - Google Patents
非揮發性記憶體設備 Download PDFInfo
- Publication number
- TWI693603B TWI693603B TW107121220A TW107121220A TWI693603B TW I693603 B TWI693603 B TW I693603B TW 107121220 A TW107121220 A TW 107121220A TW 107121220 A TW107121220 A TW 107121220A TW I693603 B TWI693603 B TW I693603B
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- TW
- Taiwan
- Prior art keywords
- memory array
- memory
- processor
- soc
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/325—Power saving in peripheral device
- G06F1/3275—Power saving in memory, e.g. RAM, cache
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3206—Monitoring of events, devices or parameters that trigger a change in power modality
- G06F1/3215—Monitoring of peripheral devices
- G06F1/3225—Monitoring of peripheral devices of memory devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/325—Power saving in peripheral device
- G06F1/3268—Power saving in hard disk drive
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0866—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches for peripheral storage systems, e.g. disk cache
- G06F12/0871—Allocation or management of cache space
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
- G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
- G06F12/0877—Cache access modes
- G06F12/0882—Page mode
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
- G06F13/1684—Details of memory controller using multiple buses
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1016—Performance improvement
- G06F2212/1024—Latency reduction
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/10—Providing a specific technical effect
- G06F2212/1028—Power efficiency
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/21—Employing a record carrier using a specific recording technology
- G06F2212/214—Solid state disk
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Memory System (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/630,330 US10845866B2 (en) | 2017-06-22 | 2017-06-22 | Non-volatile memory system or sub-system |
US15/630,330 | 2017-06-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201905926A TW201905926A (zh) | 2019-02-01 |
TWI693603B true TWI693603B (zh) | 2020-05-11 |
Family
ID=64693163
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109113727A TWI737273B (zh) | 2017-06-22 | 2018-06-21 | 用於操作一記憶體之方法、記憶體設備、及電子記憶體設備 |
TW107121220A TWI693603B (zh) | 2017-06-22 | 2018-06-21 | 非揮發性記憶體設備 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109113727A TWI737273B (zh) | 2017-06-22 | 2018-06-21 | 用於操作一記憶體之方法、記憶體設備、及電子記憶體設備 |
Country Status (7)
Country | Link |
---|---|
US (3) | US10845866B2 (ja) |
EP (1) | EP3642723A4 (ja) |
JP (2) | JP2020524849A (ja) |
KR (1) | KR102324703B1 (ja) |
CN (1) | CN110799954B (ja) |
TW (2) | TWI737273B (ja) |
WO (1) | WO2018236663A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11210019B2 (en) | 2017-08-23 | 2021-12-28 | Micron Technology, Inc. | Memory with virtual page size |
US10394456B2 (en) * | 2017-08-23 | 2019-08-27 | Micron Technology, Inc. | On demand memory page size |
US10691345B2 (en) * | 2017-09-29 | 2020-06-23 | Intel Corporation | Systems, methods and apparatus for memory access and scheduling |
US10942854B2 (en) | 2018-05-09 | 2021-03-09 | Micron Technology, Inc. | Prefetch management for memory |
US10714159B2 (en) | 2018-05-09 | 2020-07-14 | Micron Technology, Inc. | Indication in memory system or sub-system of latency associated with performing an access command |
US10754578B2 (en) | 2018-05-09 | 2020-08-25 | Micron Technology, Inc. | Memory buffer management and bypass |
US11010092B2 (en) | 2018-05-09 | 2021-05-18 | Micron Technology, Inc. | Prefetch signaling in memory system or sub-system |
KR102519572B1 (ko) * | 2018-05-11 | 2023-04-07 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
US11404097B2 (en) | 2018-12-11 | 2022-08-02 | SK Hynix Inc. | Memory system and operating method of the memory system |
US11139010B2 (en) * | 2018-12-11 | 2021-10-05 | SK Hynix Inc. | Memory system and operating method of the memory system |
KR20200126666A (ko) | 2019-04-30 | 2020-11-09 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그것의 동작 방법 |
KR20200124045A (ko) | 2019-04-23 | 2020-11-02 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그것의 동작 방법 |
KR20200137548A (ko) | 2019-05-30 | 2020-12-09 | 에스케이하이닉스 주식회사 | 메모리 장치 및 이의 테스트 동작 방법 |
KR20200126678A (ko) | 2019-04-30 | 2020-11-09 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그것의 동작 방법 |
EP3909075A4 (en) | 2019-05-17 | 2022-09-07 | Yangtze Memory Technologies Co., Ltd. | THREE-DIMENSIONAL STATIC RAM MEMORY DEVICE |
KR20240064052A (ko) * | 2019-05-17 | 2024-05-10 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 정적 랜덤 액세스 메모리를 사용하는 3차원 메모리 디바이스의 캐시 프로그램 작동 |
US11908505B2 (en) | 2020-01-24 | 2024-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric FET-based content addressable memory |
TWI763266B (zh) * | 2020-01-24 | 2022-05-01 | 台灣積體電路製造股份有限公司 | 記憶體裝置、資料處理裝置及資料處理方法 |
US11232838B2 (en) | 2020-01-24 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Ferroelectric FET-based content addressable memory |
US11586557B2 (en) * | 2020-08-26 | 2023-02-21 | Micron Technology, Inc. | Dynamic allocation of buffers for eviction procedures |
US20220197537A1 (en) * | 2020-12-18 | 2022-06-23 | Micron Technology, Inc. | Object management in tiered memory systems |
CN112632073B (zh) * | 2020-12-24 | 2024-06-04 | 第四范式(北京)技术有限公司 | 一种时序特征数据表的存储方法及装置 |
US12038855B2 (en) * | 2022-02-09 | 2024-07-16 | Qualcomm Incorporated | Memory system with adaptive refresh |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040141374A1 (en) * | 2003-01-21 | 2004-07-22 | Nexflash Technologies, Inc. | Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereof |
US20080209112A1 (en) * | 1999-08-04 | 2008-08-28 | Super Talent Electronics, Inc. | High Endurance Non-Volatile Memory Devices |
US20110307762A1 (en) * | 2008-10-09 | 2011-12-15 | Federico Tiziani | Virtualized ecc nand |
US20120151127A1 (en) * | 2010-12-14 | 2012-06-14 | Sun-Young Lim | Method of storing data in a storing device including a volatile memory device |
US20150138884A1 (en) * | 2013-11-18 | 2015-05-21 | Samsung Electronics Co., Ltd. | Memory Systems Including Nonvolatile Buffering and Methods of Operating the Same |
US20160342509A1 (en) * | 2015-05-22 | 2016-11-24 | Sandisk Enterprise Ip Llc | Hierarchical FTL Mapping Optimized for Workload |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04195563A (ja) * | 1990-11-28 | 1992-07-15 | Mitsubishi Electric Corp | メモリシステムの制御装置 |
JP3132677B2 (ja) * | 1991-07-23 | 2001-02-05 | キヤノン株式会社 | 情報記録再生方法 |
JPH08137753A (ja) * | 1994-11-07 | 1996-05-31 | Fuji Xerox Co Ltd | ディスクキャッシュ装置 |
JPH11203200A (ja) * | 1998-01-12 | 1999-07-30 | Sony Corp | 並列プロセッサおよびメモリ制御方法 |
US20020042867A1 (en) * | 1998-06-04 | 2002-04-11 | Alva Henderson | Variable word length data memory |
US7752380B2 (en) * | 2003-07-31 | 2010-07-06 | Sandisk Il Ltd | SDRAM memory device with an embedded NAND flash controller |
KR100606242B1 (ko) * | 2004-01-30 | 2006-07-31 | 삼성전자주식회사 | 불휘발성 메모리와 호스트간에 버퍼링 동작을 수행하는멀티 포트 휘발성 메모리 장치, 이를 이용한 멀티-칩패키지 반도체 장치 및 이를 이용한 데이터 처리장치 |
US8244971B2 (en) * | 2006-07-31 | 2012-08-14 | Google Inc. | Memory circuit system and method |
US7716411B2 (en) * | 2006-06-07 | 2010-05-11 | Microsoft Corporation | Hybrid memory device with single interface |
JP2008041080A (ja) * | 2006-07-10 | 2008-02-21 | Hitachi Ltd | 記憶制御システム、記憶制御システムの制御方法、ポートセレクタ、及びコントローラ |
US20080046630A1 (en) * | 2006-08-21 | 2008-02-21 | Sandisk Il Ltd. | NAND flash memory controller exporting a logical sector-based interface |
US20090172621A1 (en) * | 2007-12-27 | 2009-07-02 | Sanved Dessiggn Automation | System and method for system-on-chip (soc) performance analysis |
JP4909963B2 (ja) * | 2008-09-09 | 2012-04-04 | 株式会社東芝 | 統合メモリ管理装置 |
WO2011021367A1 (ja) * | 2009-08-21 | 2011-02-24 | パナソニック株式会社 | 不揮発性記憶装置、アクセス装置、及び不揮発性記憶システム |
KR20110046243A (ko) * | 2009-10-27 | 2011-05-04 | 삼성전자주식회사 | 사용자 장치 및 그것의 맵핑 데이터 관리 방법 |
JP2011154547A (ja) * | 2010-01-27 | 2011-08-11 | Toshiba Corp | メモリ管理装置及びメモリ管理方法 |
JP4806089B1 (ja) * | 2010-06-30 | 2011-11-02 | 株式会社東芝 | 情報処理装置、raidコントローラカード、およびミラーリング方法 |
US8635514B2 (en) * | 2011-02-28 | 2014-01-21 | Micron Technology, Inc. | Error control in memory storage systems |
KR101861170B1 (ko) * | 2011-08-17 | 2018-05-25 | 삼성전자주식회사 | 마이그레이션 관리자를 포함하는 메모리 시스템 |
US8811110B2 (en) * | 2012-06-28 | 2014-08-19 | Intel Corporation | Configuration for power reduction in DRAM |
US9899066B2 (en) * | 2012-09-10 | 2018-02-20 | Texas Instruments Incorporated | Priority based backup in nonvolatile logic arrays |
US9268682B2 (en) * | 2012-10-05 | 2016-02-23 | Skyera, Llc | Methods, devices and systems for physical-to-logical mapping in solid state drives |
US9652376B2 (en) * | 2013-01-28 | 2017-05-16 | Radian Memory Systems, Inc. | Cooperative flash memory control |
US9524771B2 (en) * | 2013-07-12 | 2016-12-20 | Qualcomm Incorporated | DRAM sub-array level autonomic refresh memory controller optimization |
JP2015056171A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | メモリシステムおよび情報処理装置 |
US9600413B2 (en) * | 2013-12-24 | 2017-03-21 | Intel Corporation | Common platform for one-level memory architecture and two-level memory architecture |
US9785547B2 (en) * | 2014-02-13 | 2017-10-10 | Hitachi, Ltd. | Data management apparatus and method |
JP6680454B2 (ja) * | 2014-03-17 | 2020-04-15 | 国立研究開発法人産業技術総合研究所 | Lsiチップ積層システム |
US9778986B2 (en) * | 2014-03-28 | 2017-10-03 | Hitachi, Ltd. | Storage system |
US10838865B2 (en) * | 2014-05-08 | 2020-11-17 | Micron Technology, Inc. | Stacked memory device system interconnect directory-based cache coherence methodology |
US9779025B2 (en) * | 2014-06-02 | 2017-10-03 | Micron Technology, Inc. | Cache architecture for comparing data |
US9711194B2 (en) * | 2015-01-28 | 2017-07-18 | Xilinx, Inc. | Circuits for and methods of controlling the operation of a hybrid memory system |
US9823852B2 (en) | 2015-05-01 | 2017-11-21 | Toshiba Memory Corporation | Memory system with nonvolatile memory |
US9858198B2 (en) * | 2015-06-26 | 2018-01-02 | Intel Corporation | 64KB page system that supports 4KB page operations |
JP6540391B2 (ja) * | 2015-09-03 | 2019-07-10 | 富士通株式会社 | ストレージ制御装置、ストレージ制御プログラム、及びストレージ制御方法 |
JP6209573B2 (ja) * | 2015-10-02 | 2017-10-04 | 株式会社ソニー・インタラクティブエンタテインメント | 情報処理装置および情報処理方法 |
US9666263B2 (en) * | 2015-10-07 | 2017-05-30 | Samsung Electronics Co., Ltd. | DIMM SSD SoC DRAM byte lane skewing |
TWI551991B (zh) * | 2015-11-20 | 2016-10-01 | 群聯電子股份有限公司 | 記憶體管理方法與系統及其記憶體儲存裝置 |
KR102491651B1 (ko) | 2015-12-14 | 2023-01-26 | 삼성전자주식회사 | 비휘발성 메모리 모듈, 그것을 포함하는 컴퓨팅 시스템, 및 그것의 동작 방법 |
US11210019B2 (en) * | 2017-08-23 | 2021-12-28 | Micron Technology, Inc. | Memory with virtual page size |
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2017
- 2017-06-22 US US15/630,330 patent/US10845866B2/en active Active
-
2018
- 2018-06-14 CN CN201880041960.9A patent/CN110799954B/zh active Active
- 2018-06-14 EP EP18821215.3A patent/EP3642723A4/en not_active Withdrawn
- 2018-06-14 JP JP2019570140A patent/JP2020524849A/ja active Pending
- 2018-06-14 WO PCT/US2018/037480 patent/WO2018236663A1/en unknown
- 2018-06-14 KR KR1020207001303A patent/KR102324703B1/ko active IP Right Grant
- 2018-06-21 TW TW109113727A patent/TWI737273B/zh active
- 2018-06-21 TW TW107121220A patent/TWI693603B/zh active
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2020
- 2020-10-23 US US17/078,832 patent/US11119561B2/en active Active
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2021
- 2021-09-07 US US17/468,155 patent/US11550381B2/en active Active
- 2021-12-20 JP JP2021205633A patent/JP2022031959A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080209112A1 (en) * | 1999-08-04 | 2008-08-28 | Super Talent Electronics, Inc. | High Endurance Non-Volatile Memory Devices |
US20040141374A1 (en) * | 2003-01-21 | 2004-07-22 | Nexflash Technologies, Inc. | Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereof |
US20110307762A1 (en) * | 2008-10-09 | 2011-12-15 | Federico Tiziani | Virtualized ecc nand |
US20120151127A1 (en) * | 2010-12-14 | 2012-06-14 | Sun-Young Lim | Method of storing data in a storing device including a volatile memory device |
US20150138884A1 (en) * | 2013-11-18 | 2015-05-21 | Samsung Electronics Co., Ltd. | Memory Systems Including Nonvolatile Buffering and Methods of Operating the Same |
US20160342509A1 (en) * | 2015-05-22 | 2016-11-24 | Sandisk Enterprise Ip Llc | Hierarchical FTL Mapping Optimized for Workload |
Also Published As
Publication number | Publication date |
---|---|
US11550381B2 (en) | 2023-01-10 |
KR102324703B1 (ko) | 2021-11-11 |
EP3642723A1 (en) | 2020-04-29 |
US20220066534A1 (en) | 2022-03-03 |
TWI737273B (zh) | 2021-08-21 |
CN110799954A (zh) | 2020-02-14 |
EP3642723A4 (en) | 2021-03-24 |
CN110799954B (zh) | 2024-03-26 |
KR20200008047A (ko) | 2020-01-22 |
WO2018236663A1 (en) | 2018-12-27 |
JP2020524849A (ja) | 2020-08-20 |
US10845866B2 (en) | 2020-11-24 |
JP2022031959A (ja) | 2022-02-22 |
US11119561B2 (en) | 2021-09-14 |
US20210041935A1 (en) | 2021-02-11 |
TW202040580A (zh) | 2020-11-01 |
TW201905926A (zh) | 2019-02-01 |
US20180373313A1 (en) | 2018-12-27 |
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