TWI692836B - 基板處理裝置 - Google Patents
基板處理裝置 Download PDFInfo
- Publication number
- TWI692836B TWI692836B TW107106598A TW107106598A TWI692836B TW I692836 B TWI692836 B TW I692836B TW 107106598 A TW107106598 A TW 107106598A TW 107106598 A TW107106598 A TW 107106598A TW I692836 B TWI692836 B TW I692836B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- processing apparatus
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- holding pin
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 358
- 238000012545 processing Methods 0.000 title claims abstract description 125
- 230000002093 peripheral effect Effects 0.000 claims abstract description 36
- 238000007789 sealing Methods 0.000 claims abstract description 32
- 238000000926 separation method Methods 0.000 claims abstract description 12
- 239000011148 porous material Substances 0.000 claims description 13
- 238000013459 approach Methods 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 4
- 239000007789 gas Substances 0.000 description 98
- 230000001681 protective effect Effects 0.000 description 81
- 239000007788 liquid Substances 0.000 description 63
- 238000012986 modification Methods 0.000 description 22
- 230000004048 modification Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 15
- 238000012546 transfer Methods 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000000126 substance Substances 0.000 description 11
- -1 polytetrafluoroethylene Polymers 0.000 description 9
- 239000003595 mist Substances 0.000 description 8
- 238000005406 washing Methods 0.000 description 7
- 239000004743 Polypropylene Substances 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229920001155 polypropylene Polymers 0.000 description 6
- 239000004698 Polyethylene Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 229920000573 polyethylene Polymers 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920003002 synthetic resin Polymers 0.000 description 5
- 239000000057 synthetic resin Substances 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-044080 | 2017-03-08 | ||
JP2017044080A JP6970515B2 (ja) | 2017-03-08 | 2017-03-08 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201834138A TW201834138A (zh) | 2018-09-16 |
TWI692836B true TWI692836B (zh) | 2020-05-01 |
Family
ID=63448560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107106598A TWI692836B (zh) | 2017-03-08 | 2018-02-27 | 基板處理裝置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6970515B2 (ja) |
TW (1) | TWI692836B (ja) |
WO (1) | WO2018163748A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI814148B (zh) * | 2020-11-25 | 2023-09-01 | 日商斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7179466B2 (ja) | 2018-02-13 | 2022-11-29 | 株式会社Screenホールディングス | 基板処理装置 |
JP7282494B2 (ja) * | 2018-09-18 | 2023-05-29 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP7277258B2 (ja) * | 2019-05-31 | 2023-05-18 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013229552A (ja) * | 2011-12-19 | 2013-11-07 | Dainippon Screen Mfg Co Ltd | 基板保持回転装置およびそれを備えた基板処理装置、ならびに基板処理方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4666473B2 (ja) * | 2005-05-12 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
JP5795920B2 (ja) * | 2011-09-21 | 2015-10-14 | 株式会社Screenホールディングス | 基板処理装置 |
-
2017
- 2017-03-08 JP JP2017044080A patent/JP6970515B2/ja active Active
-
2018
- 2018-02-15 WO PCT/JP2018/005307 patent/WO2018163748A1/ja active Application Filing
- 2018-02-27 TW TW107106598A patent/TWI692836B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013229552A (ja) * | 2011-12-19 | 2013-11-07 | Dainippon Screen Mfg Co Ltd | 基板保持回転装置およびそれを備えた基板処理装置、ならびに基板処理方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI814148B (zh) * | 2020-11-25 | 2023-09-01 | 日商斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2018148131A (ja) | 2018-09-20 |
TW201834138A (zh) | 2018-09-16 |
WO2018163748A1 (ja) | 2018-09-13 |
JP6970515B2 (ja) | 2021-11-24 |
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